Cooling device and semiconductor device

Abstract

A cooling device (100) is provided with: a heat sink (20) in which an element surface of a heat generating element (1) is brought into contact with a first main surface (20U) and that has a plurality of fins (21) on a second main surface (20D); and a cooling unit (40) that has a first water passing port (31IN) for making a cooling medium flow into a flow path (31) and a second water passing port (30OUT) for discharging the cooling medium to the outside of the flow path (31) and that cools the fins (21) by the cooling medium in the flow path (31). A first region (25) where the plurality of fins (21) of the heat sink (20) are provided is configured so as to have a first extension part (25A) that extends toward a side of the flow path (31) where the static pressure is lower, with respect to the direction of the flow of the cooling medium, than a heat exchange region (2) on the element surface of the heat generating element (1), the element surface being brought in contact with the first main surface (20U) of the heat sink (20).

Description

Cooling device and semiconductor device

[0001] The present disclosure relates to a cooling device and a semiconductor device.

[0002] In recent years, with the miniaturization and high performance of electronic devices, the heat density of heat-generating elements such as central processing units (CPUs), large-scale integration (LSIs), and power semiconductor devices has increased, resulting in higher temperatures. This has created a demand for improved heat dissipation from these elements. To achieve high heat dissipation from heat-generating elements, water-cooling systems are sometimes used. Examples of refrigerants used include water mixed with ethylene glycol-based antifreeze, natural refrigerants such as water and ammonia, fluorocarbon refrigerants such as Fluorinert, fluorocarbon refrigerants such as HCFC123 and HFC134a, alcohol-based refrigerants such as methanol and alcohol, and ketone-based refrigerants such as acetone. In water-cooling systems, water channels through which the refrigerant flows are formed in a water jacket. However, contact with the refrigerant can cause corrosion on the fins and inside the channels, potentially resulting in reduced cooling performance. Therefore, the following corrosion-preventing structures have been proposed.

[0003] That is, a conventional cooling device includes a top plate having a heat dissipation surface formed on one side, a bottom plate facing the top plate and thicker than the top plate, a plurality of fins provided on the bottom plate, and a peripheral wall formed along the outer periphery of the bottom plate to surround the periphery of the plurality of fins. The plurality of fins and the peripheral wall are joined to the heat dissipation surface of the top plate, and a flow path for a refrigerant is formed by a space surrounded by the top plate, the bottom plate, the plurality of fins, and the peripheral wall, and the potential on the top plate side is higher than the potential on the bottom plate side (see, for example, Patent Document 1).

[0004] JP 2022-87498 A

[0005] In the conventional cooling device described above, localized corrosion in the flow path is suppressed to ensure cooling performance while extending the life of the cooler. However, in a cooling device with such a configuration, the heat-generating element on the upstream side of the flow path is cooled by a low-temperature refrigerant flowing directly below it, while the heat-generating element on the downstream side of the flow path is cooled by a refrigerant that has been warmed upstream. This reduces the cooling effect.

[0006] The present disclosure discloses a technique for solving the above-described problems, and aims to provide a cooling device and a semiconductor device that can effectively cool a heat-generating element.

[0007] The cooling device of the present disclosure is a cooling device for cooling a heat-generating element, comprising: a heat sink to which an element surface of the heat-generating element is attached on a first main surface on a first direction side in a thickness direction, and which has a plurality of fins erected on a second main surface on a second direction side opposite to the first direction toward the second direction; and a cooling section in which a flow path through which a cooling medium flows is formed, the cooling section having a first water inlet for letting the cooling medium flow into the flow path and a second water inlet for discharging the cooling medium to the outside of the flow path, the cooling section accommodating the fins of the heat sink within the flow path and cooling the fins with the cooling medium, wherein, in a plane perpendicular to the thickness direction, a first region in which the plurality of fins of the heat sink are provided has a first extension portion that extends toward a side where static pressure is lower in the flow direction of the cooling medium within the flow path than a heat exchange region on the element surface of the heat-generating element attached to the first main surface of the heat sink. The semiconductor device of the present disclosure also includes two cooling devices configured as described above and a semiconductor element as the heat-generating element, wherein the semiconductor element has a heat exchange area formed on each of the element surfaces on both sides in the thickness direction, and the first main surface of the heat sink of each of the cooling devices is attached to each of the heat exchange areas.

[0008] According to the cooling device and semiconductor device of the present disclosure, a cooling device and a semiconductor device that can effectively cool a heat-generating element can be obtained.

[0009] 1 is a cross-sectional view showing a schematic configuration of a semiconductor device according to a first embodiment; FIG. 2 is a perspective view showing an exploded state of the semiconductor device according to the first embodiment; FIG. 3 is a conceptual diagram showing a fin area of ​​a heat sink projected onto a flow path in the semiconductor device according to the first embodiment; FIG. 4 is a conceptual diagram showing a fin area and a metal region of the heat sink projected onto a flow path in the semiconductor device according to the first embodiment; FIG. 5 is a diagram showing a static pressure difference within a flow path in the semiconductor device according to the first embodiment; FIG. 6 is a conceptual diagram showing a fin area and a metal region of the heat sink projected onto a flow path in the semiconductor device according to the first embodiment; FIG. 7 is a conceptual diagram showing a fin area and a metal region of the heat sink projected onto a flow path in the semiconductor device according to the first embodiment; FIG. 8 is a diagram showing an excerpt of the fin area of ​​the heat sink in the semiconductor device according to the first embodiment; FIG. 9 is a diagram showing a cooling effect improvement ratio of a first extension portion in the semiconductor device according to the first embodiment; Fig. 10 is a conceptual diagram in which the fin area and metal region of the heat sink are projected onto the flow path in the semiconductor device according to embodiment 2. Fig. 11 is a conceptual diagram in which the fin area and metal region of the heat sink are projected onto the flow path in the semiconductor device according to embodiment 2. Fig. 12 is a diagram showing a static pressure difference in the flow path in the semiconductor device according to embodiment 2. Fig. 13 is a perspective view showing an example of the configuration of a semiconductor element.

[0010] First Embodiment Fig. 1 is a cross-sectional view showing a schematic configuration of a semiconductor device 100 according to a first embodiment. Fig. 2 is a perspective view showing an exploded state of the semiconductor device 100 according to the first embodiment. As shown in Fig. 1, the semiconductor device 100 includes a semiconductor element 1 as a heat-generating element and a cooling device 40 that cools the semiconductor element 1.

[0011] The following description will be made using an XYZ three-dimensional Cartesian coordinate system, with the Z axis being the vertical direction, which is the thickness direction of the semiconductor element 1. In the vertical direction Z, the side toward which the arrow points is defined as the upper side +Z, which is a first direction, and the side opposite to this upper side +Z is defined as the lower side -Z, which is a second direction. The plane including the X and Y directions perpendicular to the vertical direction Z is sometimes referred to as the XY plane.

[0012] The cooling device 40 includes a heat sink 20 on which a semiconductor element 1 is mounted, and a cooling unit 30 disposed on the -Z lower side of the heat sink 20. The element surface 1D of the semiconductor element 1 on the -Z lower side is attached to an upper surface 20U of the heat sink 20, which serves as a first main surface on the upper +Z side. The heat sink 20 also includes a plurality of fins 21 extending upright toward the -Z lower side on a lower surface 20D, which serves as a second main surface on the -Z lower side.

[0013] 2, for convenience of illustration, the fins 21 of the heat sink 20 are omitted, but the region in which the fins 21 are arranged in the XY plane of the heat sink 20 is a fin area 25, which is a first region indicated by diagonal lines. That is, a plurality of fins 21 are erected within this fin area 25. The heat sink 20 is made of a thermally conductive material such as aluminum or copper. The fins 21 are, for example, pin fins such as rectangular fins, cylindrical fins, and hexagonal fins, straight fins, etc.

[0014] The cooling unit 30 has a flow path 31 formed therein, recessed downward -Z, through which a cooling medium (not shown) flows. In this embodiment, the flow path 31 has a substantially rectangular cross-sectional shape perpendicular to the vertical direction Z. As shown in Fig. 2, a first water passage 30IN through which the cooling medium flows into the flow path 31 and a second water passage 30OUT through which the cooling medium is discharged to the outside of the flow path 31 are disposed adjacent to each other on one side of the flow path 31 having a substantially rectangular cross-sectional shape.

[0015] The flow path 31 has a header 31IN that guides the cooling medium flowing in from the first water inlet 30IN in its width direction (X direction side), a cold water jacket portion 31J in which the fins 21 are accommodated, and a header 31OUT that guides the cooling medium to the second water inlet 30OUT.

[0016] 1, the depth D1 of the cold water jacket portion 31J in the vertical direction Z is configured to be approximately the same as the length D1 of the fins 21 in the vertical direction Z. Furthermore, the lengths of the cold water jacket portion 31J in the X and Y directions are approximately the same as the lengths of the fin area 25 of the heat sink 20 in the X and Y directions. In other words, the size of the cold water jacket portion 31J is formed according to the size of the fin area 25 so that multiple fins 21 can be accommodated.

[0017] The depth D2 of the header 31IN and the header 31OUT is greater than the depth D1 of the water-cooling jacket portion 31J.

[0018] In this way, the cooling medium flows in through the first water inlet 30IN, is sent through the header 31IN into the cold water jacket portion 31J, and cools the fins 21. The cooling medium is then sent through the header 31OUT to the second water inlet 30OUT and is discharged from the cooling device 40.

[0019] The relationship between the size of the metal region 2 of the semiconductor element 1 and the size of the fin area 25 of the heat sink 20 in the XY plane, which is a key feature of this embodiment, will be described below. The semiconductor element 1 has a metal region 2 as a heat exchange region in part of its element surface 1D on the lower -Z side. The metal region 2 is made of a thermally conductive material such as silver or copper, is exposed from the insulating member 3 that seals the semiconductor element 1, and transfers heat from the semiconductor element 1 to the outside.

[0020] 3 is a conceptual diagram showing the fin area 25 of the heat sink 20 projected onto the flow path 31 on the cooling unit 30 in the semiconductor device 100 according to the first embodiment. As described above, the cold water jacket portion 31J and the fin area 25 of the heat sink 20 are configured to have approximately the same size, and therefore are shown overlapping in FIG.

[0021] Fig. 4 is a conceptual diagram showing a state in which the metal region 2 of the semiconductor element 1 is further projected onto the fin area 25 of Fig. 3. As shown in Fig. 4, the fin area 25 is configured to be expanded by a width W1 on the −Y direction side and a length W2 on the +X direction side compared to the metal region 2.

[0022] First, the reason why the fin area 25 is configured to be larger than the metal area 2 by the length W1 on the −Y direction side will be explained.

[0023] The coolant flowing through the flow path 31 flows from areas of high static pressure to areas of low static pressure. Generally, a water-cooled cooling system has a cooling water pump, and the coolant flows through the first water inlet 30IN and the second water inlet 30OUT via hoses. Therefore, the second water inlet 30OUT, from which the coolant flows, is designed to have a lower static pressure than the first water inlet 30IN, from which the coolant flows. In other words, expanding the fin area 25 on the side with lower static pressure relative to the flow direction of the coolant results in expanding the fin area 25 downstream of the flow path 31.

[0024] In this embodiment, the fin area 25 is configured to have a first extension portion 25A that extends toward the -Y side, where static pressure is lower, relative to the metal region 2 of the semiconductor element 1 in the flow path 31 in the Y direction of the coolant flow. Only coolant that has been heated on the upstream side flows directly below the metal region 2 on the downstream side in the flow direction of the coolant. However, by configuring the fin area 25 to have a first extension portion 25A that extends toward the -Y direction, where static pressure is lower, and expanding the side of the fin area 25 where static pressure is lower, the heat dissipation area on the downstream side is expanded. This improves the cooling effect of the semiconductor element 1 on the downstream side of the flow path 31.

[0025] Next, the reason why fin area 25 is configured to be larger than metal region 2 by a length W2 on the +X direction side will be described. Figure 5 is a diagram showing a function f1 indicating the static pressure value at header 31IN and a function f2 indicating the static pressure value at header 31OUT in semiconductor device 100 according to embodiment 1. The horizontal axis corresponds to the X direction in Figure 4, i.e., the width direction of headers 31IN and 31OUT.

[0026] In a U-shaped water channel in which the first water inlet 30IN and the second water inlet 30OUT are provided on one side of the flow path 31 and the inlet and outlet of the flow path 31 are adjacent, as in this embodiment, the coolant passes through the water-cooled jacket portion 31J containing the fins 21 as it flows from the header 31IN to the header 31OUT, resulting in pressure loss. As a result, the static pressure in the outlet header 31OUT is lower than that in the inlet header 31IN, resulting in the static pressure difference Δp characteristic shown in Figure 5. Therefore, the coolant flows more easily toward the inlet / outlet side where the static pressure difference Δp is larger, i.e., toward the -X direction. Meanwhile, the static pressure difference Δp decreases as the distance from the inlet / outlet increases, i.e., toward the +X direction, making it more difficult for the coolant to flow. This reduces the cooling effect of the semiconductor element 1 located farther from the inlet / outlet.

[0027] In this embodiment, the fin area 25 is configured to have a second extension portion 25B that extends toward the side where the static pressure difference of the coolant in the flow path 31 between the first water port 30IN and the second water port 30OUT is lower, i.e., toward the +X direction, than the metal area 2. In this way, by expanding the fin area 25 on the side where the static pressure difference is smaller, the heat dissipation area is expanded, and the cooling effect can be improved.

[0028] The first water port 30IN and the second water port 30OUT are arranged so that the metal region 2 of the semiconductor element 1 is located in the area between the center line C1 of the first water port 30IN and the center line C2 of the second water port 30OUT. With this configuration, the coolant can flow directly below the entire metal region 2, further improving cooling efficiency.

[0029] A semiconductor device 100 having a different configuration from the above will now be described. FIG. 6 is a conceptual diagram of the semiconductor device 100 according to the first embodiment, in which the fin area 25 of the heat sink 20 and the metal region 2 of the semiconductor element 1 are projected onto the flow path 31 on the cooling unit 30. In this configuration, a plurality of semiconductor elements 1 are provided, and a first extension portion 25A is provided for each metal region 2 of each semiconductor element 1. This allows the fin area 25 to be provided even between adjacent metal regions 2 that transfer heat from the semiconductor element 1. This increases the heat dissipation area, further improving the cooling effect. It also reduces thermal interference between the semiconductor elements 1.

[0030] A semiconductor device 100 having a different configuration from that described above will now be described. Figure 7 is a conceptual diagram showing the fin area 25 of the heat sink 20 and the metal region 2 of the semiconductor element 1 projected onto the flow path 31 on the cooling section 30 in the semiconductor device 100 according to the first embodiment. In this way, even in the semiconductor device 100 having a wide configuration in the X direction, the cooling effect can be improved in the same way as described above by providing the first extension portion 25A and the second extension portion 25B.

[0031] 8 is a conceptual diagram of the semiconductor device 100 according to the first embodiment, in which the fin area 25 of the heat sink 20 and the metal region 2 of the semiconductor element 1 are projected onto the flow path 31 on the cooling unit 30.

[0032] In this configuration, multiple semiconductor elements 1 are provided, and a second extension portion 25B is provided for each metal region 2 of each semiconductor element 1. This allows fin areas 25 to be provided between adjacent metal regions 2 that transfer heat from the semiconductor elements 1. This increases the heat dissipation area, further improving the cooling effect. It also reduces thermal interference between the semiconductor elements 1.

[0033] Only refrigerant heated by heat generated by the upstream semiconductor element flows directly below the semiconductor element located downstream. However, by expanding the fin area on the side of the water channel where static pressure is lower, the heat dissipation area can be expanded, improving the cooling effect. The farther away from the inlet / outlet of the flow channel is, i.e., toward the +X direction, the smaller the static pressure difference Δp becomes, as shown in FIG. 5 . Therefore, the coolant is less likely to flow directly below the metal region 2 on the +X direction side than directly below the metal region 2 on the −X direction side. Therefore, by providing a second extension 25B even on the metal region 2 closest to the +X direction and expanding the fin area 25 on the side where the static pressure difference is smaller, the heat dissipation area can be expanded, improving the cooling effect.

[0034] The following describes the improvement in cooling effect achieved by providing first extension portion 25A and second extension portion 25B. Fig. 9 is a diagram illustrating an excerpt of fin area 25 shown in Fig. 8 in semiconductor device 100 according to embodiment 1. The width of first extension portion 25A expanded toward the side with lower static pressure relative to the flow direction of the coolant is designated as W1A, and the width of second extension portion 25B expanded toward the side with smaller static pressure difference Δp is designated as W2A.

[0035] 10 is a diagram showing the cooling effect improvement ratio of the first extension portion 25A in the semiconductor device 100 according to the first embodiment. The figure shows the ratio of the improvement in the cooling effect when W1A is expanded to 6 mm, based on the cooling effect when W1A = 0 mm and W2A = 0 mm. The ratios in this graph are derived using the following formula: Cooling effect improvement ratio = {(cooling effect when W1A is expanded) - (cooling effect when W1A = W2A = 0)} / (cooling effect when W1A = W2A = 0)

[0036] 11 is a diagram showing the cooling effect improvement ratio of the second extension portion 25B in the semiconductor device 100 according to the first embodiment. The figure shows the ratio of the improvement in the cooling effect when W2A is expanded to 4 mm, with the cooling effect when W1A=0 mm and W2A=0 mm being used as the reference. The ratios in this graph are derived using the following formula: Cooling effect improvement ratio={(cooling effect when W2A is expanded)-(cooling effect when W1A=W2A=0)} / (cooling effect when W1A=W2A=0)

[0037] 12 is a diagram showing the cooling effect improvement ratio of W2 of second extension portion 25B when W1A of first extension portion 25A is set to 6 mm in semiconductor device 100 according to the first embodiment. The figure shows the ratio of the improvement in cooling effect when W2A is expanded to 4 mm, based on the cooling effect when W1A=6 mm and W2A=0 mm. The ratio in this graph is derived from the following formula: Cooling effect improvement ratio={(cooling effect when W2A is expanded)-(cooling effect when W1A=6 mm and W2A=0)} / (cooling effect when W1A=6 mm and W2A=0).

[0038] 10 and 11, it can be seen that the cooling effect gradually saturates as both W1A and W2A are increased. Furthermore, when W1A is fixed at 6 mm, the cooling effect improvement ratio when W2A is increased is shown in Fig. 12. As can be seen from Fig. 12, the cooling effect improves when both W1A and W2A are increased, but the cooling effect improvement ratio is nearly saturated when W1A = 6 mm and W2A = 4 mm.

[0039] Therefore, in order to minimize the increase in size of the semiconductor device, it is preferable to set 0<W1A≦6 mm and 0<W2A≦4 mm. That is, it is preferable to set the distance between the end of the first extension portion and the outer edge of the heat exchange area to 6 mm or less, and the distance between the end of the second extension portion and the outer edge of the heat exchange area to 4 mm or less.

[0040] The cooling device configured as described above is a cooling device for cooling a thermal element, comprising: a heat sink to which an element surface of the heat generating element is attached on a first main surface on a first direction side in a thickness direction, and which has a plurality of fins erected on a second main surface on a second direction side opposite to the first direction toward the second direction; and a cooling section in which a flow path through which a cooling medium flows is formed, the cooling section having a first water passage for letting the cooling medium flow into the flow path and a second water passage for discharging the cooling medium to the outside, the cooling section accommodating the fins of the heat sink within the flow path and cooling the fins with the cooling medium, wherein, in a plane perpendicular to the thickness direction, a first region in which the plurality of fins of the heat sink are provided has a first extension portion that extends toward a side where static pressure is lower in the flow direction of the cooling medium within the flow path than a heat exchange region on the element surface of the heat generating element attached to the first main surface of the heat sink.

[0041] With this configuration, the cooling efficiency of the heat generating element can be improved even in the downstream portion of the flow path.

[0042] Furthermore, in the cooling device configured as described above, the first region is configured to have a second extension portion that extends toward the side where the static pressure difference of the cooling medium in the flow path between the first water inlet and the second water inlet is lower than the heat exchange region.

[0043] With this configuration, the cooling efficiency can be improved even in places in the flow path where the cooling medium is difficult to flow.

[0044] The first extension area and the second extension area are not limited to being independent areas, and may overlap depending on the relative positions of the first water passage, the second water passage, and the fin area.

[0045] Second Embodiment. The second embodiment of the present invention will be described below with reference to the drawings, focusing on the differences from the first embodiment. The same parts as those in the first embodiment are given the same reference numerals and will not be described again. Figure 13 is a conceptual diagram of a semiconductor device 100 according to the second embodiment, in which the fin area 25 of the heat sink 20 and the metal region 2 of the semiconductor element 1 are projected onto the flow path 31 on the cooling unit 30.

[0046] In a flow path 31 having a substantially rectangular cross section perpendicular to the vertical direction Z, a first water passage port 30IN is provided on a first side of the flow path 31, and a second water passage port 30OUT is provided on a second side opposite the first side on which the first water passage port 30IN is provided. Furthermore, when viewed from the vertical direction Z, the first water passage port 30IN and the second water passage port 30OUT are disposed such that a first extension line extending from a center line C1 of the first water passage port 30IN toward the interior of the flow path 31 overlaps with a second extension line extending from a center line C2 of the second water passage port 30OUT toward the interior of the flow path 31. That is, in the Y direction, the first water passage port 30IN and the second water passage port 30OUT are disposed on the same straight line.

[0047] In this configuration, multiple semiconductor elements 1 are provided, and a first extension 25A is provided for each metal region 2 of each semiconductor element 1. This allows fin areas 25 to be provided between adjacent metal regions 2 that transfer heat from the semiconductor elements 1. This increases the heat dissipation area, further improving the cooling effect. It also reduces thermal interference between the semiconductor elements 1.

[0048] 14 is a conceptual diagram of a semiconductor device 100 according to a second embodiment, in which fin area 25 of heat sink 20 and metal region 2 of semiconductor element 1 are projected onto flow path 31 on cooling portion 30.

[0049] 13, the first water passage port 30IN and the second water passage port 30OUT are arranged on the same straight line, but they are not arranged on the same straight line in the semiconductor device 100 shown in Fig. 14. When viewed from the vertical direction Z, the first water passage port 30IN and the second water passage port 30OUT are arranged so that the fin area 25 is located within the region sandwiched between a first extension line extending the center line C1 of the first water passage port 30IN toward the inside of the flow path 31 and a second extension line extending the center line C2 of the second water passage port 30OUT toward the inside of the flow path 31.

[0050] The fin area 25 is configured to have a first extension portion 25A for each metal region 2, which extends toward the +X direction, the side with lower static pressure in the +X direction of the coolant flow, between adjacent metal regions 2 that electrically heat the heat of the semiconductor element 1. Furthermore, the fin area 25 is configured to have a third extension portion 25C which extends toward the −X direction side within the flow path 31, the side with the greater inertial force of the coolant.

[0051] Next, the reason for configuring the fin area 25 to be larger on the −X direction side will be explained. Fig. 15 is a diagram showing a function f1 indicating the static pressure of the header 31IN and a function f2 indicating the static pressure of the header 31OUT in the semiconductor device 100 according to the second embodiment. The horizontal axis corresponds to the X direction in Fig. 14.

[0052] In a flow path 31 configured as described above, the static pressure difference Δp is difficult to change, as shown in FIG. 15 . However, the coolant flowing in through the first water inlet 30IN has inertia and tends to flow from the first water inlet 30IN toward the +X direction. Therefore, the coolant flows less easily directly below the metal region 2 furthest to the -X direction than the other two metal regions 2 toward the +X direction, resulting in a reduced cooling effect. Therefore, by providing a third extension 25C on the side where the coolant's inertia is strongest, i.e., the -X direction side (the water channel inlet side), and expanding the area on the inlet side of the flow path 31, the cooling effect can be improved by increasing the flow rate. The heat dissipation area is also expanded, further improving the cooling effect.

[0053] In addition, in order to avoid increasing the size of the semiconductor device as much as possible, the distance between the end of the third extension portion and the outer edge of the heat exchange area can be set to 6 mm or less, and the distance between the end of the second extension portion and the outer edge of the heat exchange area can be set to 4 mm or less. This can improve cooling efficiency while avoiding increasing the size of the semiconductor device, similar to the dimensional relationship W1A≦6 mm, W2A≦4 mm mentioned above.

[0054] In the above embodiment, an example in which one cooling device 40 is provided for one semiconductor element 1 has been described, but as will be explained below, this is not limiting. Fig. 16 is a perspective view showing a semiconductor element 1 according to a second embodiment. A configuration is adopted in which metal regions 2 exposed from the encapsulant are formed on the element surface on both sides in the thickness direction of the semiconductor element 1. Then, a configuration may be adopted in which the first main surfaces of the heat sinks 20 of the two cooling devices 40 are attached to the respective metal regions 2.

[0055] In this way, by attaching the heat sink 20 to both sides of the semiconductor element 1 in the thickness direction, the heat dissipation area is increased, and further, by expanding the fin area, the cooling effect can be improved.

[0056] Although various exemplary embodiments and examples are described in this disclosure, the various features, aspects, and functions described in one or more embodiments are not limited to the application of a particular embodiment, but may be applied to the embodiments alone or in various combinations. Therefore, countless variations not illustrated are anticipated within the scope of the technology disclosed in this specification. For example, this includes cases where at least one component is modified, added, or omitted, or where at least one component is extracted and combined with components of another embodiment.

[0057] 1 Semiconductor element (heat generating element), 2 Metal region (heat exchange region), 21 Fin, 20 Heat sink, 25 Fin area, 25A First extension portion, 25B Second extension portion, 25C Third extension portion, 30IN First water passage port, 30OUT Second water passage port, 31 Flow path, 30 Cooling portion, 40 Cooling device, 100 Semiconductor device.

Claims

1. A cooling device for cooling a heat-generating element, The element surface of the heating element is in contact with the first main surface on the first direction side in the thickness direction, and the heat sink has a plurality of fins erected on the second direction side from the second main surface on the second direction side opposite to the first direction, A cooling unit is provided which has a flow path through which a cooling medium flows, a first water inlet for the cooling medium to flow into the flow path, and a second water inlet for the cooling medium to discharge the cooling medium outside the flow path, and which houses the fins of the heat sink within the flow path and cools the fins with the cooling medium, Equipped with, In a plane perpendicular to the thickness direction, the first region on which the plurality of fins of the heat sink are provided has a first extended portion that extends toward the side with lower static pressure relative to the flow direction of the cooling medium in the flow path, compared to the heat exchange region on the element surface of the heating element that is in contact with the first main surface of the heat sink. Cooling device.

2. The first region is configured to have a second extended portion that extends toward the side where the static pressure difference of the cooling medium in the flow path between the first water inlet and the second water inlet is lower than that of the heat exchange region. The cooling device according to claim 1.

3. The first region is configured to have a third extended portion that extends toward the side where the inertial force of the cooling medium in the flow path is greater than that of the heat exchange region. The cooling device according to claim 1.

4. The first region is configured to have a third extended portion that extends toward the side where the inertial force of the cooling medium in the flow path is greater than that of the heat exchange region. The cooling device according to claim 2.

5. The flow path has a rectangular cross-sectional shape perpendicular to the thickness direction, When viewed from the thickness direction, the first region is located within the region sandwiched between a first extension line, which extends the centerline of the first water inlet inward towards the interior of the flow path, and a second extension line, which extends the centerline of the second water inlet inward towards the interior of the flow path. The first water inlet and the second water inlet are respectively arranged on one side of the rectangular flow path. A cooling device according to any one of claims 1 to 3.

6. The flow path has a rectangular cross-sectional shape perpendicular to the thickness direction, The first water inlet is provided on the first side of the rectangular flow path, The second water inlet is provided on the second side opposite to the first side on which the first water inlet is provided. When viewed from the thickness direction, the first water inlet and the second water inlet are arranged such that a first extension line, obtained by extending the center line of the first water inlet inward into the flow path, and a second extension line, obtained by extending the center line of the second water inlet inward into the flow path, overlap. A cooling device according to any one of claims 1 to 3.

7. The flow path has a rectangular cross-sectional shape perpendicular to the thickness direction, The first water inlet is provided on the first side of the rectangular flow path, The second water inlet is provided on the second side opposite to the first side on which the first water inlet is provided. The first water inlet and the second water inlet are arranged such that, when viewed from the thickness direction, the first region is located within the region between the first extension line, which extends the centerline of the first water inlet inward towards the interior of the flow path, and the second extension line, which extends the centerline of the second water inlet inward towards the interior of the flow path. A cooling device according to any one of claims 1 to 3.

8. Multiple heating elements are mounted on the first main surface of the heat sink. The first region is configured to have a first extended portion for each of the heating elements, The cooling device according to claim 1.

9. Multiple heating elements are mounted on the first main surface of the heat sink. The first region is configured to have a first extended portion and a second extended portion for each of the heating elements. The cooling device according to claim 2.

10. The distance between the end of the first extension and the outer edge of the heat exchange region is set to 6 mm or less. The distance between the end of the second extension and the outer edge of the heat exchange region is set to 4 mm or less. The cooling device according to claim 2.

11. The distance between the end of the third extension and the outer edge of the heat exchange region is set to 6 mm or less. The distance between the end of the second extension and the outer edge of the heat exchange region is set to 4 mm or less. The cooling device according to claim 3.

12. Two cooling devices according to any one of claims 1 to 3, The semiconductor element used as the heat-generating element comprises, The semiconductor element has the heat exchange regions formed on both sides of the element surface in the thickness direction. The first main surface of the heat sink of each cooling device is in contact with each of the heat exchange regions. Semiconductor equipment.