Thermal radiation trap for measuring temperature inside the chamber

Abstract

The present invention relates to a thermal radiation trap for measuring the internal temperature of a chamber, and more specifically, to a thermal radiation trap for accurately and stably measuring the internal temperature of a deposition chamber, and even more specifically, to a thermal radiation trap for measuring the internal temperature of a chamber that provides a thermal radiation trap in the form of a deep groove formed inside a deposition chamber and a method for measuring temperature using the same. According to the present invention, the effect of enabling stable temperature measurement is provided by minimizing the influence of temperature deviation on the chamber surface. In addition, it provides the effect of being able to measure a constant internal temperature without being affected by temperature changes occurring during the deposition process.

Description

Technology Field

[0001] The present invention relates to a thermal radiation trap for measuring the internal temperature of a chamber, and more specifically, to a thermal radiation trap for accurately and stably measuring the internal temperature of a deposition chamber, and even more specifically, to a thermal radiation trap for measuring the internal temperature of a chamber that provides a thermal radiation trap in the form of a deep groove formed inside a deposition chamber and a method for measuring temperature using the same. Background Technology

[0002] Generally, semiconductor devices are manufactured by repeatedly performing many processes such as photolithography, etching, and thin film formation, and most of these processes take place inside a vacuum chamber.

[0003] Since the temperature inside the vacuum chamber plays a crucial role in process stabilization, the temperature inside the vacuum chamber is measured frequently.

[0004] For such temperature measurement, a temperature measuring wafer with several thermocouples (TCs) attached is placed on a heater chuck, and a wire connected to the TCs is extended outside the vacuum chamber to be connected to a temperature measuring device.

[0005] Next, while maintaining a vacuum, the temperature measuring wafer is heated using an electric resistance or ramp heating method to raise the temperature inside the vacuum chamber to the actual process temperature.

[0006] At this time, the temperature measuring device measures the temperature transmitted through the wire connected to the temperature measuring wafer.

[0007] Generally, the method for measuring the temperature inside a vacuum chamber using a temperature measuring wafer is as follows.

[0008] First, supply an inert gas (e.g., nitrogen gas) to bring the inside of the vacuum chamber to atmospheric pressure, and then open the door of the vacuum chamber.

[0009] Next, place the wafer for temperature measurement inside the vacuum chamber, and the wire connected to the TC outside the vacuum chamber.

[0010] Next, the vacuum chamber door is closed, and the gas inside the vacuum chamber is sucked out to create a vacuum inside the chamber, after which the temperature-measuring wafer is heated by a heater chuck.

[0011] Next, the temperature inside the vacuum chamber is measured using a temperature sensor connected to a temperature-measuring wafer.

[0012] Next, once the temperature measurement inside the vacuum chamber is completed, inert gas is supplied back into the chamber to restore atmospheric pressure, and then the temperature measurement wafer is removed.

[0013] Next, the gas inside the vacuum chamber is drawn back in to create a vacuum, and then the temperature inside the chamber is set to the desired temperature.

[0014] The conventional method for measuring the temperature of a vacuum chamber using a temperature measuring wafer, which proceeds in this sequence, had the problem that measuring the temperature took a long time because the process of supplying gas into the vacuum chamber and suctioning gas was repeated twice in order to remove the temperature measuring wafer from the vacuum chamber after measuring the temperature by inserting the temperature measuring wafer into the vacuum chamber and measuring the temperature.

[0015] In addition, to place the temperature-measuring wafer inside the vacuum chamber, the vacuum chamber door is opened and the vacuum chamber is exposed to the atmosphere.

[0016] Since the conditions inside the vacuum chamber change due to such exposure, there was a problem requiring additional maintenance to reuse the vacuum chamber in the semiconductor device manufacturing process.

[0017] Meanwhile, in addition to the above method, a method of measuring temperature using a radial thermometer can be utilized; however, the temperature measurement method using a radial thermometer in a conventional deposition chamber has the following problems.

[0018] In other words, as material accumulates during the deposition process, surface emissivity changes, which reduces the accuracy of temperature measurement, and the temperature becomes non-uniform due to the temperature gradient within the chamber.

[0019] In addition, plasma, steam, and gas interfere with infrared radiation, causing measurement errors, and infrared reflection from chamber walls or other components affects the measurement.

[0020] In addition, the temperature distribution changes due to variations in thermal properties caused by changes in the thickness of the deposited layer, and it is difficult to accurately capture local temperature changes due to the fixed position of the sensor.

[0021] Due to the aforementioned problems, the temperature of the deposition chamber fluctuates, making it difficult to measure a constant temperature.

[0022] Therefore, there is a need for a device capable of accurately and stably measuring the temperature inside the deposition chamber, as well as a technology that can provide a temperature measurement method unaffected by temperature deviations on the chamber surface and temperature changes during the deposition process. Prior art literature

[0023] (Prior Art 1) Korean Patent Publication No. 10-2010-0052582 The problem to be solved

[0024] Therefore, the present invention has been devised to resolve the aforementioned conventional problems,

[0025] The objective of the present invention is to provide a device capable of accurately and stably measuring the temperature inside a deposition chamber.

[0026] Another objective of the present invention is to provide a temperature measurement method that is not affected by temperature deviations on the chamber surface and temperature changes during the deposition process.

[0027] Another objective of the present invention is to provide a structure that improves the measurement accuracy of a radial thermometer.

[0028] Another objective of the present invention is to provide a temperature measurement system capable of improving the reliability and reproducibility of a deposition process. means of solving the problem

[0029] In order to achieve the problem that the present invention aims to solve,

[0030] A thermal radiation trap for measuring the internal temperature of a chamber according to one embodiment of the present invention is,

[0031] In a device for measuring the internal temperature of a chamber,

[0032] A thermal radiation trap (100) in the shape of a deep groove formed toward the interior of a deposition chamber (10);

[0033] Radiation thermometer (200) for measuring the temperature of the above-mentioned heat radiation trap;

[0034] The problem of the present invention is solved by including a chamber structure (300) configured to form a closed deposition chamber. Effects of the invention

[0035] The thermal radiation trap for measuring the internal temperature of a chamber according to the present invention provides the following remarkable effects.

[0036] First, it provides the effect of enabling stable temperature measurement by minimizing the influence of temperature deviations on the chamber surface.

[0037] Second, it provides the effect of being able to measure a constant internal temperature without being affected by temperature changes occurring during the deposition process.

[0038] Third, the measurement accuracy of the radial thermometer is improved by utilizing the blackbody cavity principle.

[0039] Fourth, it reduces external interference and increases the stability of the internal temperature, providing the effect of enabling reliable measurements.

[0040] Fifth, it contributes to the reproducibility and quality improvement of the deposition process. Brief explanation of the drawing

[0041] FIG. 1 is a conceptual diagram of a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 2 is a conceptual diagram showing the operation process of a thermal radiation trap (100) in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 3 is a graph showing the change in effective emissivity according to the ratio of the depth and diameter of a thermal radiation trap in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 4 is a flowchart showing the operation process of a radial thermometer of a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 5 is a graph showing the relationship between the measurement accuracy of a radiative thermometer and the emissivity of an object in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 6 is a conceptual diagram of a chamber structure (300) in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 7 is a graph showing the pressure change inside a closed chamber over time in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 8 is a conceptual diagram conceptually summarizing the features of a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. FIG. 9 is a graph showing the change in effective emissivity according to the depth / diameter ratio of the thermal radiation trap in a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention. Specific details for implementing the invention

[0042] The following description merely illustrates the principles of the present invention. Therefore, those skilled in the art may invent various devices that embody the principles of the present invention and are included within the concept and scope of the present invention, even though they are not explicitly described or illustrated in this specification.

[0043] Furthermore, all conditional terms and embodiments listed in this specification are, in principle, explicitly intended only for the purpose of enabling an understanding of the concept of the invention and should be understood not as being limited to the embodiments and conditions specifically listed as such.

[0044] A device for measuring the internal temperature of a chamber according to one embodiment of the present invention is,

[0045] A thermal radiation trap (100) in the shape of a deep groove formed toward the interior of a deposition chamber (10);

[0046] Radiation thermometer (200) for measuring the temperature of the above-mentioned heat radiation trap;

[0047] It is characterized by including a chamber structure (300) configured to form a closed deposition chamber.

[0048] At this time, the depth of the heat radiation trap (100) is 4 to 6 times or more its diameter; this is a characteristic feature.

[0049] Hereinafter, an example of a thermal radiation trap for measuring the internal temperature of a chamber according to the present invention will be described in detail.

[0050] Before proceeding with the full explanation, I will specifically explain the problems of the conventional technology.

[0051] First, I will explain the difficulties of temperature measurement.

[0052] In other words, when using a radial thermometer in a deposition chamber, the phenomenon where it is difficult to obtain a constant temperature measurement due to temperature fluctuations can occur due to various factors.

[0053] First, as a dynamic characteristic of the deposition process, the thermal properties change continuously as the material accumulates on the substrate during the deposition process, and as a result, the surface emissivity may change over time, which affects the temperature measurement.

[0054] Second, as a temperature gradient within the chamber, a temperature gradient is formed within the chamber due to the deposition source, substrate heater, cooling system, etc., which makes the temperature non-uniform.

[0055] Third, regarding plasma interference, the plasma used in some deposition processes can emit infrared radiation, which can cause errors in the measurements of radiative thermometers.

[0056] Fourth, as a result of the influence of steam and gas, steam or reaction gases generated during the deposition process can absorb or scatter infrared rays, which can distort the signal detected by the thermometer.

[0057] Fifth, regarding reflection and interference, infrared reflection from chamber walls or other parts can cause interference with the measurement.

[0058] Sixth, as the deposition thickness changes over time, the thermal conductivity and heat capacity change as the thickness of the deposition layer increases, which can affect the temperature distribution.

[0059] Seventh, regarding the issue of sensor placement, the position of the radial thermometer is fixed, so it may be difficult to accurately capture local temperature changes occurring during the deposition process.

[0060] Next, I will explain the validity of the thermal radiation trap applied in the present invention.

[0061] In other words, the measurement method using deep grooves utilizes the 'blackbody cavity' principle; this approach minimizes the influence of surface emissivity and enables more stable temperature measurements.

[0062] In particular, a closed-type design reduces external interference and increases internal temperature stability.

[0063] In addition, it provides an effect of reducing the influence of temperature deviations on the chamber surface; specifically, the deep groove interior offers the advantage of being less sensitive to local temperature changes on the chamber surface.

[0064] In addition, it provides the effect of minimizing the impact of the deposition process; specifically, it can reduce the impact of temperature changes caused by ring deposition occurring within the chamber.

[0065] In addition, it provides a stable measurement effect; specifically, since the temperature inside the bone is less sensitive to external changes, more consistent measurements are possible.

[0066] In this case, it can be defined as a technical term such as "blackbody cavity," "quasi-blackbody cavity," "emissivity well," or "thermal radiation trap."

[0067] Furthermore, the above method is based on Kirchhoff's laws and the principle of blackbody radiation; in this case, as radiation is reflected multiple times within the deep valley, the effective emissivity increases, and it approaches an ideal blackbody.

[0068] At this time, the depth and shape of the groove are important. In the present invention, the depth was set to 4 to 6 times the diameter, and through experiments, it was confirmed that this is the most ideal depth.

[0069] In addition, since the treatment of the internal surface of the bone (e.g., coating) can also affect performance, it is preferably characterized by applying a coating treatment to the internal surface of the bone.

[0070] In addition, it may be configured to prevent the inflow of deposition material by adding a shutter or protective device to the groove entrance.

[0071] Furthermore, the aforementioned Kirchhoff's Law of Thermal Radiation is a law related to thermal radiation and includes the following:

[0072] As a law of absorption and emission, it states that at a specific temperature, the ratio of energy absorbed by an object (absorption rate) and the ratio of energy emitted (emission rate) are equal; in other words, the ratio of energy absorbed by an object at a specific wavelength is equal to the ratio of energy emitted at the same wavelength.

[0073] And, the above black body radiation principle explains the process in which an ideal black body absorbs 100% of the energy incident at all wavelengths and emits energy through radiation in a state of thermal equilibrium.

[0074] The aforementioned black body is an ideal absorber that neither reflects nor transmits any light, and absorbs all incident energy.

[0075] Furthermore, Planck's Law states that the radiant energy emitted by a black body at a specific temperature follows Planck's law, and this law explains the radiation spectrum of a black body as a function of wavelength and temperature.

[0076] In addition, the Stefan-Boltzmann Law states that the total energy emitted by a black body is proportional to the fourth power of the temperature (T^4), and the formula is as follows.

[0077] E = sigma T^4

[0078] Here, sigma represents the Stefan-Boltzmann constant.

[0079] Meanwhile, there are several similarities between the method of using a radiative thermometer by forming a deep groove in the deposition chamber described above and the thermal radiation trap, which is Kirchhoff's law and the principle of blackbody radiation.

[0080] First, regarding the accuracy of temperature measurement, both Kirchhoff's laws and the thermal radiation trap, which is the principle of blackbody radiation, play an important role in accurately measuring the temperature of an object.

[0081] The method of arranging a radial thermometer using the aforementioned deep groove is also intended to accurately measure temperature based on this principle.

[0082] Second, regarding energy absorption and emission, maintaining thermal balance inside the deposition chamber and reducing temperature deviations is similar to the balance of absorption and emission described in a thermal radiation trap, which is the principle of blackbody radiation.

[0083] In other words, by maintaining thermal equilibrium, more consistent temperature measurements are possible.

[0084] Third, regarding the importance of emissivity, the emissivity of the object being measured is important for a radial thermometer to accurately measure temperature.

[0085] Specifically, a black body is an ideal model with an emissivity of 1, and using a thermal radiation trap that is a deep thermal well can reduce variations in emissivity inside the chamber and provide a more stable measurement environment.

[0086] FIG. 1 is a conceptual diagram of a thermal radiation trap for measuring the internal temperature of a chamber according to an embodiment of the present invention.

[0087] As illustrated in FIG. 1, the thermal radiation trap for measuring the internal temperature of a chamber according to the present invention is,

[0088] In a device for measuring the internal temperature of a chamber,

[0089] A thermal radiation trap (100) in the shape of a deep groove formed toward the interior of a deposition chamber (10);

[0090] Radiation thermometer (200) for measuring the temperature of the above-mentioned heat radiation trap;

[0091] It is characterized by including a chamber structure (300) configured to form a closed deposition chamber.

[0092] To explain in detail, the thermal radiation trap (100) is characterized by being formed in a deep groove shape toward the interior of the deposition chamber (10), and generally has a cylindrical or conical structure.

[0093] In addition, the purpose of the above thermal radiation trap is to accurately and stably measure the temperature inside the deposition chamber and to minimize the influence of surface temperature deviations and temperature changes during the deposition process.

[0094] In addition, regarding the operating principle, it is characterized by utilizing the blackbody cavity principle, in which radiation is reflected multiple times internally, thereby increasing the effective emissivity.

[0095] In addition, a characteristic feature is that it is effective when the depth is 4 to 6 times the diameter, and performance can be improved through internal surface treatment.

[0096] In addition, as an advantage, it reduces the influence of temperature deviations on the deposition chamber surface, minimizes the impact of the deposition process, and enables stable temperature measurement.

[0097] At this point, to summarize, as shown in FIG. 2, the heat radiation trap (100) is,

[0098] Formation of a deep groove toward the interior of the deposition chamber;

[0099] Radiation reflection within the above bone;

[0100] Increase in effective emissivity;

[0101] It is characterized by the ability to measure stable temperature.

[0102] To explain the operating principle, Figure 2 illustrates the process in which a deep groove is formed inside the deposition chamber to create a thermal radiation trap, and as radiation is reflected multiple times within it, the effective emissivity increases, enabling stable temperature measurement.

[0103] And, I will explain the above-mentioned heat radiation trap (100) in detail using formulas and examples.

[0104] For example, in the case of a thermal radiation trap with a diameter of 10 mm, the depth must be at least 40 to 60 mm, and the effective emissivity (ε_eff) of the thermal radiation trap can be expressed by the following formula.

[0105] ε_eff = 1 - (1 - ε)^n

[0106] Here, ε represents the actual emissivity of the material, and n represents the average number of times radiation is reflected (proportional to the depth / diameter ratio).

[0107] In addition, Figure 3 is a graph showing the change in effective emissivity according to the depth and diameter ratio of the thermal radiation trap, through which one can visually confirm how the effective emissivity changes as the depth / diameter ratio increases.

[0108] Specifically, this graph shows the change in effective emissivity according to the depth / diameter ratio of the thermal radiation trap, where the X-axis represents the depth / diameter ratio and the Y-axis represents the effective emissivity, and curves for various material emissivity (ε) are displayed.

[0109] At this point, it can be seen that as the depth / diameter ratio increases, the effective emissivity approaches 1, which means that the thermal radiation trap approaches an ideal black body.

[0110] In addition, the lower the emissivity of the initial material, the more pronounced the increase in effective emissivity with increasing depth / diameter ratio.

[0111] The importance of the depth / diameter ratio in the design of a thermal radiation trap could be visually confirmed through the graph above.

[0112] And, the above-mentioned radiative thermometer (200) performs the function of measuring the temperature of the above-mentioned heat radiation trap (100).

[0113] To explain in detail, a radiation thermometer is a non-contact temperature measuring device that determines temperature by measuring infrared radiation emitted by an object.

[0114] In addition, the operating principle is based on the Stefan-Boltzmann law and detects thermal radiation energy emitted from the surface of an object.

[0115] In addition, for the components, an optical system including a lens that focuses infrared light:

[0116] Detector for converting infrared rays into electrical signals;

[0117] It includes a signal processing circuit for converting an electrical signal into a temperature value.

[0118] In addition, as an advantage, it does not affect the target due to non-contact measurement, provides a fast response time, and enables measurement over a high temperature range.

[0119] In this case, considerations for use include the importance of setting the emissivity of the target object and the fact that it may be affected by the surrounding environment.

[0120] And, I will explain the above-mentioned radial thermometer (200) in detail using formulas and examples.

[0121] For example, the temperature range measured by a radiating thermometer is generally from -50°C to 3000°C, and the radiant energy (W) according to the Stefan-Boltzmann law is expressed by the following formula.

[0122] W = ε * σ * T^4

[0123] Here, ε represents the emissivity of the object (0 < ε ≤ 1), σ represents the Stefan-Boltzmann constant (5.67 * 10^-8 W / m^2*K^4), and T represents the absolute temperature (K).

[0124] And, in the case of FIG. 4, the operation process of the radial thermometer is shown, and the radial thermometer (200) is,

[0125] Thermal radiation emission from the surface of an object;

[0126] Infrared concentration through an optical system;

[0127] Electrical signal conversion in the detector;

[0128] Calculation of temperature values ​​in signal processing circuits;

[0129] It features a temperature display.

[0130] Specifically, thermal radiation emitted from the surface of an object is focused through an optical system and converted into an electrical signal at a detector.

[0131] The above signal is calculated as a temperature value in the processing circuit and finally displayed.

[0132] In addition, Figure 5 is a graph showing the relationship between the measurement accuracy of a radial thermometer and the emissivity of an object, through which the importance of setting the emissivity and the resulting temperature measurement error could be visually confirmed.

[0133] Specifically, the X-axis represents the actual emissivity of the object, the Y-axis represents the temperature measurement error (K), and curves for various set emissivity (ε) are displayed.

[0134] At this point, when the actual emissivity matches the set emissivity, it can be seen that the error becomes '0'.

[0135] In this case, if the set emissivity is higher than the actual value, a negative error occurs, and if it is lower, a positive error occurs.

[0136] And, the chamber structure (300) is configured to make the deposition chamber closed.

[0137] In other words, it is a structure of a deposition chamber that forms a sealed space completely isolated from the external environment.

[0138] At this time, as a key feature, it provides airtightness that prevents the inflow of external air and the outflow of internal gas.

[0139] In addition, it provides pressure control capable of precisely adjusting internal pressure.

[0140] In addition, it provides temperature stability that minimizes the impact of external temperature changes.

[0141] In addition, it provides contamination prevention by blocking the inflow of external impurities.

[0142] At this time, as illustrated in FIG. 6, the chamber structure (300) as a component is,

[0143] A chamber body (310) made of high-strength metal or alloy;

[0144] A sealed door (320) specially designed to maintain airtightness;

[0145] Vacuum pump system (330) for regulating internal pressure;

[0146] Gas inlet (340) for injecting process gas;

[0147] It includes an observation window (350) for monitoring the internal state.

[0149] In this case, as an advantage, precise control of the process is possible, highly reproducible deposition results can be obtained, and a high-purity process environment can be maintained.

[0150] At this time, in order to provide safety, regular airtightness checks are required, and overpressure must be prevented by installing a safety valve.

[0151] And, I will explain the above chamber structure (300) in detail using formulas and examples.

[0152] For example, the internal pressure of a typical deposition chamber is in the range of 10^-6 to 10^-9 Torr, and the rate of change of pressure inside the chamber can be expressed by the following formula.

[0153] dP / dt = (Q_in - Q_out) / V

[0154] Here, dP / dt represents the rate of change of pressure (Torr / s), Q_in represents the inlet gas flow rate (Torr*L / s), Q_out represents the exhaust gas flow rate (Torr*L / s), and V represents the chamber volume (L).

[0155] In addition, Figure 7 is a graph showing the pressure change inside a closed chamber over time, where the X-axis represents time (seconds) and the Y-axis represents pressure (Torr) on a logarithmic scale, and curves for different pump speeds are displayed.

[0156] As can be seen in the graph above, it was confirmed that the internal pressure of the chamber decreased from the initial atmospheric pressure to the target pressure (10^-6 Torr) over time, and that the faster the pump speed, the faster the target pressure was reached.

[0157] Through the graph above, the pressure control process of the closed chamber and the effect of pump speed could be visually understood.

[0158] In addition, the depth of the heat radiation trap (100) of the present invention is 4 to 6 times or more its diameter; this is a characteristic feature.

[0159] To be more specific, the objective is to maximize the blackbody cavity effect, increase effective emissivity, and improve the accuracy of temperature measurement.

[0160] In addition, regarding the principle, multiple reflections due to the deep structure are increased, enhancing the absorption rate of radiant energy and minimizing external interference.

[0161] In addition, as an advantage, it improves measurement accuracy, reduces sensitivity to changes in the external environment, and enables stable temperature measurement.

[0162] In this case, the depth must be determined by considering space efficiency when designing the chamber.

[0163] And, in the case of FIG. 8, the characteristics of the above-mentioned thermal radiation trap are conceptually summarized, designed with a depth / diameter ratio of 4 to 6 times or more;

[0164] Increased multiple reflections;

[0165] Improvement in effective emissivity;

[0166] It features improved measurement accuracy.

[0167] And, I will explain the depth of the heat radiation trap mentioned above in detail using formulas and examples.

[0168] For example, in the case of a thermal radiation trap with a diameter of 10 mm, the depth must be at least 40 to 60 mm, and the effective emissivity (ε_eff) can be expressed by the following formula.

[0169] ε_eff = 1 - (1 - ε) * (1 - F)

[0170] Here, ε represents the actual emissivity of the material, and F represents the shape factor (which increases with the depth / diameter ratio).

[0171] And, in the case of Fig. 9, it is a graph showing the change in effective emissivity according to the depth / diameter ratio of the thermal radiation trap, through which it was possible to visually confirm how the effective emissivity changes as the depth / diameter ratio increases.

[0172] The graph above shows the change in effective emissivity according to the depth / diameter ratio of a thermal radiation trap, where the X-axis represents the depth / diameter ratio and the Y-axis represents the effective emissivity, and curves for various material emissivity (ε) are displayed.

[0173] At this time, as the depth / diameter ratio increases, it can be seen that the effective emissivity approaches 1, which means that the thermal radiation trap approaches an ideal black body, and the red dashed line represents the minimum recommended ratio (4), and the green dashed line represents the optimal recommended ratio (6).

[0174] In this case, the lower the emissivity of the initial material, the more pronounced the increase in effective emissivity with increasing depth / diameter ratio.

[0175] According to the present invention, the effect of enabling stable temperature measurement is provided by minimizing the influence of temperature deviation on the chamber surface.

[0176] In addition, it provides the effect of being able to measure a constant internal temperature without being affected by temperature changes occurring during the deposition process.

[0177] Those skilled in the art to which the present invention pertains will understand that the present invention, as described above, may be implemented in other specific forms without altering the technical concept or essential features of the invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive.

[0178] The scope of the present invention is defined by the claims set forth below rather than by the detailed description above, and all modifications or variations derived from the meaning and scope of the claims and equivalent concepts thereof should be interpreted as being included within the scope of the present invention. Explanation of the symbols

[0179] 100 : Thermal radiation trap 200 : Radial thermometer 300: Chamber structure

Claims

Claim 1 A thermal radiation trap for measuring the internal temperature of a chamber comprises: a thermal radiation trap (100) in the form of a deep groove formed toward the interior of a deposition chamber (10); a radiative thermometer (200) for measuring the temperature of the thermal radiation trap; and a chamber structure (300) configured to form the deposition chamber in a closed form. The thermal radiation trap (100) is characterized by: forming a deep groove toward the interior of the deposition chamber; reflecting radiation within the groove; increasing effective emissivity; and enabling stable temperature measurement. Furthermore, the thermal radiation trap (100) is characterized by being formed such that its depth is 4 to 6 times its diameter or more to minimize the influence of surface temperature deviation of the deposition chamber (10) and changes in emissivity occurring during the deposition process, thereby implementing the principle of a blackbody cavity, and is configured such that the effective emissivity increases as radiation energy is reflected multiple times within the formed deep groove, thereby enabling stable temperature measurement. Claim 2 delete

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