Display substrate and display device

Abstract

A display substrate and a display device. The display substrate comprises: a pixel driving circuit comprises a first storage capacitor, a second storage capacitor, at least one shielding electrode, and at least one transistor of a double-gate structure; the first storage capacitor at least comprises a first electrode plate (71) and a third electrode plate (73), and the orthographic projection of the first electrode plate (71) on a substrate at least partially overlaps with the orthographic projection of the third electrode plate (73) on the substrate; the second storage capacitor at least comprises a second electrode plate (72) and a fourth electrode plate (74), and the orthographic projection of the second electrode plate (72) on the substrate at least partially overlaps with the orthographic projection of the fourth electrode plate (74) on the substrate; the second electrode plate (72) is connected to the third electrode plate (73), and the fourth electrode plate (74) is connected to a first power line (51); the orthographic projection of the shielding electrode on the substrate at least partially overlaps with the orthographic projection of a node, which is located between the two gate electrodes of the transistor of the double-gate structure, on the substrate.

Description

Display substrate, display device Technical Field

[0001] This article relates to but is not limited to the field of display technology, and specifically to a display substrate and a display device. Background Art

[0002] Organic Light Emitting Diodes (OLEDs) and Quantum-dot Light Emitting Diodes (QLEDs) are active light-emitting display devices with advantages such as self-luminescence, wide viewing angles, high contrast, low power consumption, extremely fast response times, thinness, flexibility, and low cost. With the continuous advancement of display technology, flexible displays using OLEDs or QLEDs as light-emitting devices and thin-film transistors (TFTs) for signal control have become mainstream products in the display field.

[0003] Summary of the Invention

[0004] The following is a summary of the subject matter described in detail herein. This summary is not intended to limit the scope of the claims.

[0005] On the one hand, the present disclosure provides a display substrate, including a driving circuit layer arranged on a substrate, the driving circuit layer including at least a plurality of circuit units, at least one circuit unit including a pixel driving circuit, the pixel driving circuit including a first storage capacitor, a second storage capacitor, at least one shielding electrode and at least one dual-gate structure transistor, the first storage capacitor including at least a first electrode plate and a third electrode plate, the orthographic projection of the first electrode plate on the substrate at least partially overlaps with the orthographic projection of the third electrode plate on the substrate; the second storage capacitor including at least a second electrode plate and a fourth electrode plate, the orthographic projection of the second electrode plate on the substrate at least partially overlaps with the orthographic projection of the fourth electrode plate on the substrate; the second electrode plate is connected to the third electrode plate, and the fourth electrode plate is connected to a first power line; the orthographic projection of the shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the dual-gate structure transistor on the substrate.

[0006] In an exemplary embodiment, the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the fourth plate, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0007] In an exemplary embodiment, the fourth electrode plate and the first shielding electrode are an integral structure.

[0008] In an exemplary embodiment, the first shielding electrode includes a first extension segment and a first shielding segment, the first extension segment is shaped like a strip extending along the second direction, the first end of the first extension segment is connected to the fourth electrode plate, and the second end of the first extension segment is connected to the first end of the first shielding segment; the first shielding segment is shaped like a strip extending along the first direction, the first end of the first shielding segment is connected to the second end of the first extension segment, and the second end of the first shielding segment extends along the first direction, the orthographic projection of the first shielding segment on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the first initialization transistor on the substrate, and the first direction intersects the second direction.

[0009] In an exemplary embodiment, at least one circuit unit further includes at least one first power connection line extending along a first direction, the first power line being shaped like a line extending along a second direction, the first direction intersecting the second direction; the first power line is connected to the first power connection line to form a mesh structure for transmitting a first power signal.

[0010] In an exemplary embodiment, the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the first power connection line, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0011] In an exemplary embodiment, the first power connection line and the first shielding electrode are an integral structure.

[0012] In an exemplary embodiment, at least one circuit unit further includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, which is connected to the shielding connection line, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0013] In an exemplary embodiment, the at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the fourth plate, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

[0014] In an exemplary embodiment, the fourth electrode plate and the second shielding electrode are an integral structure.

[0015] In an exemplary embodiment, the second shielding electrode includes a second extension segment and a second shielding segment, the second extension segment is shaped like a strip extending along the second direction, the first end of the second extension segment is connected to the fourth electrode plate, and the second end of the second extension segment is connected to the first end of the second shielding segment; the second shielding segment is shaped like a strip extending along the first direction, the first end of the second shielding segment is connected to the second end of the second extension segment, and the second end of the second shielding segment extends in the opposite direction of the first direction, the orthographic projection of the second shielding segment on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate, and the first direction intersects with the second direction.

[0016] In an exemplary embodiment, the at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the first power connection line, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of a node between the two gate electrodes of the compensation transistor on the substrate.

[0017] In an exemplary embodiment, the first power connection line and the second shielding electrode are an integral structure.

[0018] In an exemplary embodiment, at least one circuit unit further includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes a compensation transistor, the first electrode of the compensation transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the shielding connection line, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

[0019] In an exemplary embodiment, the at least one dual-gate structure transistor includes a data write transistor, a first electrode of the data write transistor is connected to the data signal line, and a second electrode of the data write transistor is connected to the second plate of the second storage capacitor; the at least one shielding electrode includes a third shielding electrode, the third shielding electrode is connected to the fourth plate, and the orthographic projection of the third shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the data write transistor on the substrate.

[0020] In an exemplary embodiment, the fourth electrode plate and the third shielding electrode are an integral structure.

[0021] In an exemplary embodiment, the at least one dual-gate structure transistor includes a reference transistor, a first electrode of the reference transistor is connected to the second reference signal line, and a second electrode of the reference transistor is connected to the second plate of the second storage capacitor; the at least one shielding electrode includes a fourth shielding electrode, the fourth shielding electrode is connected to the fourth plate, and the orthographic projection of the fourth shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the reference transistor on the substrate.

[0022] In an exemplary embodiment, the fourth electrode plate and the fourth shielding electrode are an integral structure.

[0023] On the other hand, the present disclosure further provides a display device comprising the aforementioned display substrate.

[0024] On the other hand, the present disclosure also provides a display substrate, including a driving circuit layer arranged on a substrate, the driving circuit layer including at least a plurality of circuit units, at least one circuit unit including a pixel driving circuit, the pixel driving circuit including a first storage capacitor, a second storage capacitor, at least one shielding electrode and at least one dual-gate structure transistor, the first storage capacitor including at least a first plate and a third plate, the second storage capacitor including at least a second plate and a fourth plate, the orthographic projection of the shielding electrode on the substrate and the orthographic projection of the node between the two gate electrodes of the dual-gate structure transistor on the substrate at least partially overlap; the at least one dual-gate structure transistor includes a first transistor to a ninth transistor, the pixel driving circuit also includes a first node, a second Node, a third node, a fourth node and a fifth node, the first node is respectively connected to the second electrode of the first transistor, the first electrode of the second transistor, the gate electrode of the third transistor and the first plate of the first storage capacitor, the second node is respectively connected to the first electrode of the third transistor, the second electrode of the eighth transistor and the second electrode of the fifth transistor, the third node is respectively connected to the second electrode of the second transistor, the second electrode of the third transistor and the first electrode of the sixth transistor, the fourth node is respectively connected to the second electrode of the sixth transistor and the second electrode of the seventh transistor, the fifth node is respectively connected to the second electrode of the fourth transistor, the second electrode of the ninth transistor, the third plate of the first storage capacitor and the second plate of the second storage capacitor; the fourth plate of the second storage capacitor is connected to the first power line.

[0025] On the other hand, the present disclosure further provides a display device comprising the aforementioned display substrate.

[0026] Still other aspects will become apparent upon reading and understanding the accompanying drawings and detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The accompanying drawings are used to provide an understanding of the technical solution of the present disclosure and constitute a part of the specification. Together with the embodiments of the present disclosure, they are used to explain the technical solution of the present disclosure and do not constitute a limitation to the technical solution of the present disclosure.

[0028] FIG1 is a schematic structural diagram of a display device;

[0029] FIG2 is a schematic diagram of a planar structure of a display substrate;

[0030] FIG3 is a schematic diagram of a cross-sectional structure of a display substrate;

[0031] FIG4 is an equivalent circuit diagram of a pixel driving circuit according to an exemplary embodiment of the present disclosure;

[0032] FIG5 is a schematic diagram of a planar structure of a display substrate according to an exemplary embodiment of the present disclosure;

[0033] FIG6 is an enlarged view of the first storage capacitor and the second storage capacitor region in FIG5 ;

[0034] FIG7 is a schematic diagram of a display substrate after a semiconductor layer pattern is formed according to the present disclosure;

[0035] 8A and 8B are schematic diagrams of a display substrate after forming a first conductive layer pattern according to the present disclosure;

[0036] 9A and 9B are schematic diagrams of a display substrate after forming a second conductive layer pattern according to the present disclosure;

[0037] FIG10 is a schematic diagram of a display substrate after a fourth insulating layer pattern is formed according to the present disclosure;

[0038] 11A and 11B are schematic diagrams of a display substrate after a third conductive layer pattern is formed thereon according to the present disclosure;

[0039] FIG12 is a schematic diagram of a display substrate after a fifth insulating layer pattern is formed according to the present disclosure;

[0040] 13A and 13B are schematic diagrams of a display substrate after a fourth conductive layer pattern is formed according to the present disclosure;

[0041] FIG14 is a schematic diagram of a planar structure of another display substrate according to an exemplary embodiment of the present disclosure;

[0042] FIG15 a is a schematic diagram of the second conductive layer in FIG14 ;

[0043] FIG15 b is a schematic diagram of the third conductive layer in FIG14 ;

[0044] FIG16 is a schematic diagram of a planar structure of another display substrate according to an exemplary embodiment of the present disclosure;

[0045] FIG17 is a schematic diagram of the third conductive layer in FIG16;

[0046] FIG18 is an enlarged view of the first storage capacitor and the second storage capacitor region in another display substrate according to an exemplary embodiment of the present disclosure;

[0047] FIG19 is an enlarged view of the first storage capacitor and the second storage capacitor region in another display substrate according to an exemplary embodiment of the present disclosure;

[0048] FIG20 is an enlarged view of the first storage capacitor and the second storage capacitor region in another display substrate according to an exemplary embodiment of the present disclosure;

[0049] FIG. 21 is a schematic diagram of a third conductive layer in another display substrate according to an exemplary embodiment of the present disclosure.

[0050] Explanation of Reference Numerals: 11—first active layer; 12—second active layer; 13—third active layer; 14—fourth active layer; 15—fifth active layer; 16—sixth active layer; 17—seventh active layer; 18—eighth active layer; 19—ninth active layer; 21—first gate electrode; 22—second gate electrode; 24—fourth gate electrode; 25—fifth gate electrode; 26—sixth gate electrode; 29—ninth gate electrode; 31—first light-emitting signal line; 32—second light-emitting signal line; 33—repair line; 36—first shielding electrode; 37—second shielding electrode; 38—third shielding electrode; 39—fourth shielding electrode; 41—first connecting electrode; 42—second connecting electrode; 43—third connecting electrode; 44—fourth connecting electrode; 45—fifth connecting electrode; 46—sixth connecting electrode; 47—seventh connecting electrode; 48—eighth connecting electrode; 49—ninth connecting electrode; 51—first power supply line; 53—data signal line; 54—reference signal connection line; 55—anode connecting electrode; 61—first scanning signal line; 62—second scanning signal line; 63—third scanning signal line; 64—fourth scanning signal line; 65—fifth scanning signal line; 68—first power supply connection line; 69—shielding connection line; 71—first electrode plate; 72—second electrode plate; 73—third electrode plate; 74—fourth electrode plate; 81—first initial signal line; 82—second initial signal line; 91—first reference signal line; 92—second reference signal line; 101—substrate; 102—driving circuit layer; 103—light-emitting structure layer; 104—encapsulation structure layer; 10—first active connection line; 20—second active connection line. DETAILED DESCRIPTION

[0051] In order to make the purpose, technical solutions and advantages of the present disclosure clearer, the embodiments of the present disclosure will be described in detail below with reference to the accompanying drawings. Note that the embodiments can be implemented in a variety of different forms. A person of ordinary skill in the art can easily understand the fact that the methods and contents can be transformed into various forms without departing from the purpose and scope of the present disclosure. Therefore, the present disclosure should not be interpreted as being limited to the contents described in the following embodiments. In the absence of conflict, the embodiments in the present disclosure and the features in the embodiments can be arbitrarily combined with each other.

[0052] The scales of the figures in this disclosure can be used as a reference for actual processes, but are not limited to such. For example, the width-to-length ratio of the channel, the thickness and spacing of the various film layers, and the width and spacing of the various signal lines can be adjusted according to actual needs. The number of pixels in the display substrate and the number of sub-pixels in each pixel are not limited to the numbers shown in the figures. The figures described in this disclosure are merely schematic structural diagrams, and one embodiment of this disclosure is not limited to the shapes or values ​​shown in the figures.

[0053] In this specification, ordinal numbers such as “first”, “second” and “third” are provided to avoid confusion among constituent elements, and are not intended to limit the number.

[0054] In this specification, for convenience, words and phrases indicating orientation or positional relationships, such as "middle," "upper," "lower," "front," "back," "vertical," "horizontal," "top," "bottom," "inside," and "outside," are used to illustrate the positional relationships of constituent elements with reference to the accompanying drawings. This is merely for the purpose of facilitating the description of this specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limiting the present disclosure. The positional relationships of constituent elements may be appropriately changed depending on the direction in which each constituent element is described. Therefore, the present disclosure is not limited to the words and phrases described in the specification and may be appropriately replaced according to the circumstances.

[0055] In this specification, unless otherwise specified or limited, the terms "mounted," "connected," and "connected" should be understood broadly. For example, they can refer to fixed, removable, or integral connections; mechanical or electrical connections; direct connections, indirect connections through intermediaries, or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this disclosure.

[0056] In this specification, a transistor refers to a device that includes at least three terminals: a gate electrode, a drain electrode, and a source electrode. A transistor has a channel region between a drain electrode (drain electrode terminal, drain region, or drain electrode) and a source electrode (source electrode terminal, source region, or source electrode), and current can flow through the drain electrode, the channel region, and the source electrode. Note that in this specification, the channel region refers to the region through which current primarily flows.

[0057] In this specification, the first electrode can be a drain electrode and the second electrode can be a source electrode, or vice versa. The functions of "source electrode" and "drain electrode" may be interchanged when using transistors with opposite polarity or when the direction of current changes during circuit operation. Therefore, in this specification, "source electrode" and "drain electrode" can be interchanged, and "source terminal" and "drain terminal" can be interchanged.

[0058] In this specification, "electrically connected" includes components connected together via an element having some electrical function. There are no particular limitations on the "element having some electrical function" as long as it enables the transfer of electrical signals between the connected components. Examples of "element having some electrical function" include not only electrodes and wiring, but also switching elements such as transistors, resistors, inductors, capacitors, and other components with various functions.

[0059] In this specification, "parallel" refers to a state where the angle formed by two straight lines is greater than -10° and less than 10°, and thus also includes a state where the angle is greater than -5° and less than 5°. Furthermore, "perpendicular" refers to a state where the angle formed by two straight lines is greater than 80° and less than 100°, and thus also includes a state where the angle is greater than 85° and less than 95°.

[0060] In this specification, the terms "film" and "layer" may be interchanged. For example, "conductive layer" may be replaced with "conductive film." Similarly, "insulating film" may be replaced with "insulating layer."

[0061] The triangles, rectangles, trapezoids, pentagons or hexagons in this specification are not in the strict sense, but may be approximate triangles, rectangles, trapezoids, pentagons or hexagons, etc. There may be some small deformations caused by tolerances, and there may be chamfers, arc edges and deformations.

[0062] The term "about" in the present disclosure refers to a numerical value that is not strictly defined and allows for process and measurement errors.

[0063] FIG1 is a schematic diagram of the structure of a display device. As shown in FIG1 , the display device may include a timing controller, a data driver, a scan driver, a light-emitting driver, and a pixel array. The timing controller is respectively connected to the data driver, the scan driver, and the light-emitting driver. The data driver is respectively connected to a plurality of data signal lines (D1 to Dn). The scan driver is respectively connected to a plurality of scan signal lines (S1 to Sm). The light-emitting driver is respectively connected to a plurality of light-emitting signal lines (E1 to Eo). The pixel array may include a plurality of sub-pixels Pxij, where i and j may be natural numbers. At least one sub-pixel Pxij may include a circuit unit and a light-emitting unit. The circuit unit may include at least a pixel driving circuit, which is respectively connected to the scan signal lines, the light-emitting signal lines, and the data signal lines. The light-emitting unit may include a light-emitting device, which is connected to the pixel driving circuit of the circuit unit. In an exemplary embodiment, the timing controller may provide grayscale values ​​and control signals suitable for the specifications of the data driver to the data driver, may provide clock signals, scan start signals, etc. suitable for the specifications of the scan driver to the scan driver, and may provide clock signals, emission stop signals, etc. suitable for the specifications of the light-emitting driver to the light-emitting driver. The data driver can generate data voltages to be supplied to data signal lines D1, D2, D3, ..., and Dn using grayscale values ​​and control signals received from a timing controller. For example, the data driver can sample grayscale values ​​using a clock signal and apply data voltages corresponding to the grayscale values ​​to data signal lines D1 to Dn on a per-pixel basis, where n can be a natural number. The scan driver can generate scan signals to be supplied to scan signal lines S1, S2, S3, ..., and Sm by receiving clock signals, scan start signals, and the like from the timing controller. For example, the scan driver can sequentially supply scan signals having on-level pulses to scan signal lines S1 to Sm. For example, the scan driver can be configured as a shift register and can sequentially transmit scan start signals provided in the form of on-level pulses to the next-stage circuit under the control of a clock signal, where m can be a natural number. The light driver can generate emission signals to be supplied to light signal lines E1, E2, E3, ..., and Eo by receiving clock signals, emission stop signals, and the like from the timing controller. For example, the light emitting driver may sequentially provide emission signals having off-level pulses to the light emitting signal lines E1 to Eo. For example, the light emitting driver may be configured as a shift register and may generate emission signals by sequentially transmitting emission stop signals provided in the form of off-level pulses to the next stage circuit under the control of a clock signal. o may be a natural number. In an exemplary embodiment, the pixel array may be provided on a display substrate.

[0064] Figure 2 is a schematic diagram of a planar structure of a display substrate. In an exemplary embodiment, the display substrate may include a display area and a frame area located around the display area. As shown in Figure 2, the display area of ​​the display substrate may include a plurality of pixel units P arranged in a matrix. At least one pixel unit P may include a first sub-pixel P1 that emits a first color light, a second sub-pixel P2 that emits a second color light, and a third sub-pixel P3 that emits a third color light. Each sub-pixel may include a circuit unit and a light-emitting unit. The circuit unit may include at least a pixel driving circuit. The pixel driving circuit is respectively connected to a scan signal line, a data signal line, and a light-emitting signal line. The pixel driving circuit is configured to receive a data voltage transmitted by the data signal line under the control of the scan signal line and the light-emitting signal line, and output a corresponding current to the light-emitting device. The light-emitting unit may include at least a light-emitting device. The light-emitting device is respectively connected to the pixel driving circuit of the sub-pixel in which it is located. The light-emitting device is configured to emit light of corresponding brightness in response to the current output by the pixel driving circuit of the sub-pixel in which it is located.

[0065] In an exemplary embodiment, the first subpixel P1 may be a red subpixel (R) that emits red light, the second subpixel P2 may be a blue subpixel (B) that emits blue light, and the third subpixel P3 may be a green subpixel (G) that emits green light. In an exemplary embodiment, the subpixels may be rectangular, diamond-shaped, pentagonal, or hexagonal, and the three subpixels may be arranged horizontally, vertically, or in a triangular pattern, although this disclosure is not limited thereto.

[0066] In an exemplary embodiment, a pixel unit may include four sub-pixels, and the four sub-pixels may be arranged in a horizontal parallel arrangement, a vertical parallel arrangement, or a square arrangement, etc., which is not limited in the present disclosure.

[0067] Figure 3 is a schematic cross-sectional view of a display substrate, illustrating the structure of three sub-pixels within the display substrate. As shown in Figure 3, in a plane perpendicular to the display substrate, the display area of ​​the display substrate may include a drive circuit layer 102 disposed on a substrate 101, a light-emitting structure layer 103 disposed on the side of the drive circuit layer 102 facing away from the substrate 101, and an encapsulation structure layer 104 disposed on the side of the light-emitting structure layer 103 facing away from the substrate 101. In some possible implementations, the display substrate may include other film layers, such as a touch-sensitive structure layer, but this disclosure does not limit this.

[0068] In an exemplary embodiment, the substrate 101 may be a flexible substrate or a rigid substrate. The driving circuit layer 102 may include a plurality of circuit units, each of which may include at least a pixel driving circuit, and the pixel driving circuit may include a plurality of transistors and a storage capacitor. The light-emitting structure layer 103 may include a plurality of light-emitting units, each of which may include at least a light-emitting device, and the light-emitting device may include an anode, an organic light-emitting layer, and a cathode. The anode is connected to the pixel driving circuit, the organic light-emitting layer is connected to the anode, and the cathode is connected to the organic light-emitting layer. The organic light-emitting layer emits light of a corresponding color under the drive of the anode and the cathode. The encapsulation structure layer 104 may include a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer stacked together. The first encapsulation layer and the third encapsulation layer may be made of inorganic materials, and the second encapsulation layer may be made of organic materials. The second encapsulation layer is arranged between the first encapsulation layer and the third encapsulation layer to form an inorganic material / organic material / inorganic material stacked structure, which can ensure that external water vapor cannot enter the light-emitting structure layer 103.

[0069] In exemplary embodiments, the organic light-emitting layer may include an emission layer (EML) and any one or more of the following: a hole injection layer (HIL), a hole transport layer (HTL), an electron blocking layer (EBL), a hole blocking layer (HBL), an electron transport layer (ETL), and an electron injection layer (EIL).

[0070] An exemplary embodiment of the present disclosure provides a display substrate, comprising a driving circuit layer disposed on a substrate, the driving circuit layer comprising at least a plurality of circuit units, at least one circuit unit comprising a pixel driving circuit, the pixel driving circuit comprising a first storage capacitor, a second storage capacitor, at least one shielding electrode, and at least one dual-gate transistor, the first storage capacitor comprising at least a first plate and a third plate, the orthographic projection of the first plate on the substrate at least partially overlapping with the orthographic projection of the third plate on the substrate; the second storage capacitor comprising at least a second plate and a fourth plate, the orthographic projection of the second plate on the substrate at least partially overlapping with the orthographic projection of the fourth plate on the substrate; the second plate is connected to the third plate, and the fourth plate is connected to a first power line; the orthographic projection of the shielding electrode on the substrate at least partially overlaps with the orthographic projection of a node between two gate electrodes of the dual-gate transistor on the substrate.

[0071] In an exemplary embodiment, the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the fourth plate, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0072] In an exemplary embodiment, the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the first power connection line, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0073] In an exemplary embodiment, at least one circuit unit further includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, which is connected to the shielding connection line, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

[0074] In an exemplary embodiment, the at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the fourth plate, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

[0075] In an exemplary embodiment, the second shielding electrode includes a second extension segment and a second shielding segment, the second extension segment is shaped like a strip extending along the second direction, the first end of the second extension segment is connected to the fourth electrode plate, and the second end of the second extension segment is connected to the first end of the second shielding segment; the second shielding segment is shaped like a strip extending along the first direction, the first end of the second shielding segment is connected to the second end of the second extension segment, and the second end of the second shielding segment extends in the opposite direction of the first direction, the orthographic projection of the second shielding segment on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate, and the first direction intersects with the second direction.

[0076] In an exemplary embodiment, the at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the first power connection line, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of a node between the two gate electrodes of the compensation transistor on the substrate.

[0077] In an exemplary embodiment, at least one circuit unit further includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes a compensation transistor, the first electrode of the compensation transistor is connected to the first plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the shielding connection line, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

[0078] In an exemplary embodiment, the at least one dual-gate structure transistor includes a data write transistor, a first electrode of the data write transistor is connected to the data signal line, and a second electrode of the data write transistor is connected to the second plate of the second storage capacitor; the at least one shielding electrode includes a third shielding electrode, the third shielding electrode is connected to the fourth plate, and the orthographic projection of the third shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the data write transistor on the substrate.

[0079] In an exemplary embodiment, the at least one dual-gate structure transistor includes a reference transistor, a first electrode of the reference transistor is connected to the second reference signal line, and a second electrode of the reference transistor is connected to the second plate of the second storage capacitor; the at least one shielding electrode includes a fourth shielding electrode, the fourth shielding electrode is connected to the fourth plate, and the orthographic projection of the fourth shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the reference transistor on the substrate.

[0080] The display substrate of the present disclosure is described below by way of some exemplary embodiments.

[0081] FIG4 is an equivalent circuit diagram of a pixel driving circuit of an exemplary embodiment of the present disclosure. In an exemplary embodiment, the pixel driving circuit may be a 3T1C, 4T1C, 5T1C, 5T2C, 6T1C, 7T1C, 8T1C, or 9T2C structure. As shown in FIG4 , the pixel driving circuit of the exemplary embodiment of the present disclosure may be a 9T2C structure, which may include 9 transistors (a first transistor T1 to a ninth transistor T9) and 2 storage capacitors (a first storage capacitor C1 and a second storage capacitor C2), and the pixel driving circuit is connected to 12 signal lines (a first scan signal line S1, a second scan signal line S2, a third scan signal line S3, a fourth scan signal line S4, a first light-emitting signal line EM1, a second light-emitting signal line EM2, a first initial signal line INIT1, a second initial signal line INIT2, a first reference signal line REF1, a second reference signal line REF2, a data signal line DATA, and a first power line VDD).

[0082] In an exemplary embodiment, the pixel driving circuit may include a first node N1, a second node N2, a third node N3, a fourth node N4, and a fifth node N5. The first node N1 is connected to the second electrode of the first transistor, the first electrode of the second transistor T2, the gate electrode of the third transistor T3, and the first end of the first storage capacitor C1, respectively; the second node N2 is connected to the first electrode of the third transistor T3, the second electrode of the eighth transistor T8, and the second electrode of the fifth transistor T5, respectively; the third node N3 is connected to the second electrode of the second transistor T2, the second electrode of the third transistor T3, and the first electrode of the sixth transistor T6, respectively; the fourth node N4 is connected to the second electrode of the sixth transistor T6 and the second electrode of the seventh transistor T7, respectively; and the fifth node N5 is connected to the second electrode of the fourth transistor T4, the second electrode of the ninth transistor T9, the second end of the first storage capacitor C1, and the second end of the second storage capacitor C2, respectively.

[0083] In an exemplary embodiment, a first end (lower plate) of the first storage capacitor C1 is connected to the first node N1, a second end (upper plate) of the first storage capacitor C1 is connected to the fifth node N5, a first end (upper plate) of the second storage capacitor C2 is connected to the first power line VDD, and a second end (lower plate) of the second storage capacitor C2 is connected to the fifth node N5.

[0084] In an exemplary embodiment, the gate electrode of the first transistor T1 is connected to the fourth scan signal line S4. When a turn-on signal is applied to the fourth scan signal line S4, the first transistor T1 transmits a first initialization voltage to the gate electrode of the third transistor T3 and the first end of the first storage capacitor C1, thereby releasing the charge accumulated in the first storage capacitor C1 and initializing the first transistor T1. The first transistor T1 can be referred to as a first initialization transistor.

[0085] In an exemplary embodiment, a gate electrode of the second transistor T2 is connected to the second scan signal line S2, a first electrode of the second transistor T2 is connected to the first node N1, and a second electrode of the second transistor T2 is connected to the third node N3. When a turn-on signal is applied to the second scan signal line S2, the second transistor T2 connects the gate electrode of the third transistor T3 to the second electrode. The second transistor T2 can be referred to as a compensation transistor.

[0086] In an exemplary embodiment, the gate electrode of the third transistor T3 is connected to the first node N1, that is, the gate electrode of the third transistor T3 is connected to the first end of the first storage capacitor C1, the first electrode of the third transistor T3 is connected to the second node N2, and the second electrode of the third transistor T3 is connected to the third node N3. The third transistor T3 determines the magnitude of the driving current based on the potential difference between its gate electrode and the first electrode. The third transistor T3 can be referred to as a driving transistor.

[0087] In an exemplary embodiment, a gate electrode of the fourth transistor T4 is connected to the third scan signal line S3, a first electrode of the fourth transistor T4 is connected to the data signal line DATA, and a second electrode of the fourth transistor T4 is connected to the fifth node N5. When a turn-on signal is applied to the third scan signal line S3, the fourth transistor T4 inputs the data voltage of the data signal line DATA to the second end of the first storage capacitor C1 and the second end of the second storage capacitor C2. The fourth transistor T4 can be referred to as a data write transistor.

[0088] In the exemplary embodiment, the gate electrode of the fifth transistor T5 is connected to the first light emission signal line EM1, the first electrode of the fifth transistor T5 is connected to the first power supply line VDD, and the second electrode of the fifth transistor T5 is connected to the second node N2. The gate electrode of the sixth transistor T6 is connected to the second light emission signal line EM2, the first electrode of the sixth transistor T6 is connected to the third node N3, and the second electrode of the sixth transistor T6 is connected to the fourth node N4. When a turn-on signal is applied to the first light emission signal line EM1 and the second light emission signal line EM2, the fifth transistor T5 and the sixth transistor T6 form a drive current path between the first power supply line VDD and the second power supply line VSS, causing the light emitting device EL to emit light. The fifth transistor T5 can be referred to as a first light emission write transistor. The sixth transistor T6 can be referred to as a second light emission write transistor.

[0089] In an exemplary embodiment, a gate electrode of the seventh transistor T7 is connected to the first scan signal line S1, a first electrode of the seventh transistor T7 is connected to the second initialization signal line INIT2, and a second electrode of the seventh transistor T7 is connected to the fourth node N4. When a turn-on signal is applied to the first scan signal line S1, the seventh transistor T7 transmits a second initialization voltage to the first electrode of the light-emitting device EL, releasing charge accumulated in the first electrode of the light-emitting device EL, thereby initializing the light-emitting device EL. The seventh transistor T7 can be referred to as a second initialization transistor.

[0090] In an exemplary embodiment, a gate electrode of the eighth transistor T8 is connected to the first scan signal line S1, a first electrode of the eighth transistor T8 is connected to the second reference signal line REF2, and a second electrode of the eighth transistor T8 is connected to the second node N2. When a turn-on signal is applied to the first scan signal line S1, the eighth transistor T8 transmits the second reference signal to the second node N2. The eighth transistor T8 can be referred to as a second reference transistor.

[0091] In an exemplary embodiment, a gate electrode of the ninth transistor T9 is connected to the second scan signal line S2, a first electrode of the ninth transistor T9 is connected to the first reference signal line REF1, and a second electrode of the ninth transistor T9 is connected to the fifth node N5. When a turn-on signal is applied to the second scan signal line S2, the ninth transistor T9 transmits the first reference signal to the fifth node N5. The ninth transistor T9 may be referred to as a first reference transistor.

[0092] In an exemplary embodiment, the light-emitting device EL may be an OLED, including a stacked first electrode (anode), an organic light-emitting layer, and a second electrode (cathode), or may be a QLED, including a stacked first electrode (anode), a quantum dot light-emitting layer, and a second electrode (cathode). The first electrode of the light-emitting device EL is connected to the fourth node N4, and the second electrode of the light-emitting device EL is connected to the second power line VSS. The signal of the second power line VSS is a continuously provided low-level signal, and the signal of the first power line VDD is a continuously provided high-level signal.

[0093] In an exemplary embodiment, the first transistor T1 to the ninth transistor T9 may be P-type transistors or N-type transistors. Using the same type of transistors in the pixel driving circuit can simplify the process flow, reduce the manufacturing difficulty of the display panel, and improve the product yield. In some possible implementations, the first transistor T1 to the ninth transistor T9 may include P-type transistors and N-type transistors.

[0094] In an exemplary embodiment, the first transistor T1 to the ninth transistor T9 may be low-temperature polysilicon thin-film transistors, or may be oxide thin-film transistors, or may be low-temperature polysilicon thin-film transistors and oxide thin-film transistors. The active layer of the low-temperature polysilicon thin-film transistor is made of low-temperature polysilicon (LTPS), and the active layer of the oxide thin-film transistor is made of oxide semiconductor (Oxide). Low-temperature polysilicon thin-film transistors have advantages such as high mobility and fast charging, while oxide thin-film transistors have advantages such as low leakage current. Integrating low-temperature polysilicon thin-film transistors and oxide thin-film transistors on a display substrate, i.e., an LTPS+Oxide (LTPO) display substrate, can take advantage of the advantages of both, achieve low-frequency driving, reduce power consumption, and improve display quality.

[0095] In an exemplary embodiment, the operation process of the pixel driving circuit shown in FIG. 4 may include a first stage to a fifth stage.

[0096] Phase 1. The first phase may include multiple sub-phases that are repeatedly executed, and each sub-phase may include a first sub-phase and a second sub-phase that are executed sequentially.

[0097] In the first sub-phase, the signals on the fourth scan signal line S4 and the first emission signal line EM1 are on signals, while the signals on the other signal lines are off signals. The on signal on the fourth scan signal line S4 turns on the first transistor T1, and the first initialization signal on the first initialization signal line INIT1 is provided to the first node N1 to initialize the first node N1. If the third transistor T3 is a P-type transistor, the third transistor T3 turns on. The on signal on the first emission signal line EM1 turns on the fifth transistor T5, and the first power signal on the first power line VDD is provided to the second node N2.

[0098] In the second sub-phase, the signals on the second scan signal line S2 and the first emission signal line EM1 are on signals, while the signals on the other signal lines are off signals. The on signal on the second scan signal line S2 turns on the second transistor T2, connecting the first node N1 and the third node N3. The threshold voltage of the third transistor T3 is written to the first node N1. The on signal on the second scan signal line S2 turns on the ninth transistor T9. The first reference signal on the first reference signal line REF1 is provided to the fifth node N5 to initialize it. The on signal on the first emission signal line EM1 turns on the fifth transistor T5, and the first power signal on the first power line VDD is provided to the second node N2.

[0099] Phase 2: The signal on the third scan signal line S3 is an on signal, and the signals on the other signal lines are off signals. The signal on the third scan signal line S3 is an on signal, which turns on the fourth transistor T4 and writes the data voltage provided by the data signal line DATA into the fifth node N5.

[0100] Phase 3. The signal on the first scan signal line S1 is an on signal, and the signals on the other signal lines are off signals. The signal on the first scan signal line S1 turns on the seventh transistor T7, and the second initial signal on the second initial signal line INIT2 can be written to the fourth node N4 to initialize the fourth node N4 and prevent residual signals from the previous frame from affecting the display of the current frame. The signal on the first scan signal line S1 turns on the eighth transistor T8, and the second reference signal on the second reference signal line REF2 can be written to the second node N2.

[0101] Phase 4: The signal on the second light-emitting signal line EM2 is an on signal, and the signals on the other signal lines are off signals. The signal on the second light-emitting signal line EM2 turns on the sixth transistor T6, connecting the third node N3 and the fourth node N4, so that the potentials of the third node N3 and the fourth node N4 are the same.

[0102] Phase 5. The signals on the first and second emission signal lines EM1 and EM2 are on, while the signals on the other signal lines are off. The signals on the first and second emission signal lines EM1 and EM2 are on, turning on the fifth and sixth transistors T5 and T6. The first power signal on the first power line VDD can provide a drive signal to the light-emitting device EL via the turned-on fifth, third, and sixth transistors T5, T3, and T6, driving the light-emitting device EL to emit light.

[0103] In an exemplary embodiment, when the driving transistor (i.e., the third transistor T3) remains in one state for a long time, electrons may be trapped in a trap, causing hysteresis. Therefore, in the first stage, by performing the initialization and threshold voltage writing process on the first node N1 multiple times (e.g., three times), not only can the hysteresis of the driving transistor be reduced, but the potential stability of the first node N1 can also be ensured. In the third stage, a second reference signal is written to the second node N2. By changing the potential of the second node N2, it can help reduce the hysteresis of the driving transistor. In the fourth stage, by connecting the third node N3 and the fourth node N4, the potential of the fourth node N4 can be increased, which helps to reduce the time required to reach the turn-on voltage of the light-emitting device.

[0104] The pixel driving circuit provided by the present disclosure can effectively improve the hysteresis of the driving transistor, which is beneficial to improving the display effect.

[0105] Figure 5 is a schematic diagram of a planar structure of a display substrate according to an exemplary embodiment of the present disclosure, illustrating the structure of a pixel driving circuit in a circuit unit in the display substrate. In an exemplary embodiment, the display substrate may include a driving circuit layer disposed on a substrate and a light-emitting structure layer disposed on a side of the driving circuit layer away from the substrate. The driving circuit layer may include at least a plurality of circuit units, the light-emitting structure layer may include at least a plurality of light-emitting units, at least one circuit unit may include a pixel driving circuit, and at least one light-emitting unit may include a light-emitting device. The light-emitting device may include at least an anode, an organic light-emitting layer, and a cathode, and the anode in the light-emitting unit may be connected to the pixel driving circuit in the corresponding circuit unit. In an exemplary embodiment, the circuit unit referred to in the present disclosure refers to an area divided according to the pixel driving circuit, and the light-emitting unit referred to in the present disclosure refers to an area divided according to the light-emitting device. In an exemplary embodiment, the position of the orthographic projection of the light-emitting unit on the substrate may correspond to the position of the orthographic projection of the circuit unit on the substrate, or the position of the orthographic projection of the light-emitting unit on the substrate may not correspond to the position of the orthographic projection of the circuit unit on the substrate.

[0106] In an exemplary embodiment, a plurality of circuit units sequentially arranged along a first direction X may be referred to as a unit row, and a plurality of circuit units sequentially arranged along a second direction Y may be referred to as a unit column. The plurality of unit rows and the plurality of unit columns constitute an array of circuit units arranged in an array. The first direction X intersects the second direction Y. For example, the first direction X is perpendicular to the second direction Y.

[0107] As shown in FIG5 , in an exemplary embodiment, the driving circuit layer may further include at least one first power line 51 extending along the second direction Y and at least one first power connection line 68 extending along the first direction X. In an exemplary embodiment, the first power line 51 is connected to the pixel driving circuits in the plurality of circuit units and is configured to continuously provide a high-level signal to the pixel driving circuits. In an exemplary embodiment, the first power line 51 extending along the second direction Y and the first power connection line 68 extending along the first direction X are interconnected to form a mesh structure for transmitting power signals.

[0108] In the present disclosure, A extends along direction B means that A may include a main part and a secondary part connected to the main part, the main part is a line, a line segment or a strip-shaped body, the main part extends along direction B, and the length of the main part extending along direction B is greater than the length of the secondary part extending along other directions.

[0109] In an exemplary embodiment, the driving circuit layer may further include a reference signal connection line 54 and a first reference signal line 91. The shape of the first reference signal line 91 may be a line shape extending along the first direction X, and the shape of the reference signal connection line 54 may be a line shape extending along the second direction Y. The reference signal connection line 54 and the first reference signal line 91 are interconnected to form a mesh structure for transmitting the first reference signal.

[0110] In an exemplary embodiment, in a plane perpendicular to the display substrate, the driving circuit layer may include a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, and a fourth conductive layer sequentially disposed on a substrate. The first power line 51 and the first power connection line 68 may be disposed in different conductive layers, and the first power line 51 and the first power connection line 68 may be connected via a via.

[0111] In an exemplary embodiment, the first power connection line 68 may be provided in the third conductive layer, and the first power line 51 may be provided in the fourth conductive layer.

[0112] In an exemplary embodiment, the reference signal connection line 54 and the first reference signal line 91 may be disposed in different conductive layers, and the reference signal connection line 54 and the first reference signal line 91 may be connected through a via.

[0113] In an exemplary embodiment, the first reference signal line 91 may be disposed in the third conductive layer, and the reference signal connection line 54 may be disposed in the fourth conductive layer.

[0114] In an exemplary embodiment, at least one pixel driving circuit may include a first transistor T1 as a first initialization transistor, a second transistor T2 as a compensation transistor, a third transistor T3 as a driving transistor, a fourth transistor T4 as a data writing transistor, a fifth transistor T5 as a first light emitting transistor, a sixth transistor T6 as a second light emitting transistor, a seventh transistor T7 as a second initialization transistor, an eighth transistor T8 as a second reference transistor, a ninth transistor T9 as a first reference transistor, a first storage capacitor, and a second storage capacitor.

[0115] In the exemplary embodiment, the gate electrode of the first transistor T1 is connected to the fourth scan signal line 64, the first electrode of the first transistor T1 is connected to the first initial signal line 81, and the second electrode of the first transistor T1 is respectively connected to the first electrode of the second transistor T2 and the first plate 71 of the first storage capacitor. The gate electrode of the second transistor T2 is connected to the fifth scan signal line 65, and the second electrode of the second transistor T2 is respectively connected to the second electrode of the third transistor T3 and the first electrode of the sixth transistor T6. The gate electrode of the third transistor T3 serves as the first plate 71 of the first storage capacitor, and the first electrode of the third transistor T3 is respectively connected to the second electrode of the fifth transistor T5 and the second electrode of the eighth transistor T8. The gate electrode of the fourth transistor T4 is connected to the third scan signal line 63, the first electrode of the fourth transistor T4 is connected to the data signal line 53, and the second electrode of the fourth transistor T4 is respectively connected to the second electrode of the ninth transistor T9, the third plate 73 of the first storage capacitor, and the second plate 72 of the second storage capacitor. The gate electrode of the fifth transistor T5 is connected to the first light emission signal line 31, and the first electrode of the fifth transistor T5 is connected to the first power line 51. The gate electrode of the sixth transistor T6 is connected to the second light-emitting signal line 32, and the second electrode of the sixth transistor T6 is connected to the second electrode of the seventh transistor T7. The gate electrode of the seventh transistor T7 is connected to the first scanning signal line 61, and the first electrode of the seventh transistor T7 is connected to the second initial signal line 82. The gate electrode of the eighth transistor T8 is connected to the first scanning signal line 61, and the first electrode of the eighth transistor T8 is connected to the second reference signal line 92. The gate electrode of the ninth transistor T9 is connected to the second scanning signal line 62, and the first electrode of the ninth transistor T9 is connected to the first reference signal line 91.

[0116] In an exemplary embodiment, the second scan signal line 62 and the fifth scan signal line 65 transmit the same scan signal.

[0117] In an exemplary embodiment, the shapes of the first scan signal line 61, the second scan signal line 62, the third scan signal line 63, the fourth scan signal line 64, the fifth scan signal line 65, the first light-emitting signal line 31, the second light-emitting signal line 32, the first initial signal line 81, the second initial signal line 82, the first reference signal line 91 and the second reference signal line 92 can be line shapes whose main parts extend along the first direction X, and the shapes of the first power line 51 and the data signal line 53 can be line shapes whose main parts extend along the second direction Y.

[0118] In an exemplary embodiment, at least one circuit unit may further include an anode connection electrode 55 connected to the second electrodes of the sixth and seventh transistors T6 and T7 , respectively, and to the anode of the light emitting unit.

[0119] In an exemplary embodiment, the driving circuit layer may further include a repair line 33. The repair line 33 may be in the shape of a line with a main portion extending along the first direction X. The orthographic projection of the repair line 33 on the substrate at least partially overlaps with the orthographic projection of the anode connection electrode 55 on the substrate. The repair line 33 is configured to input a signal to the anode of the sub-pixel with the bright spot defect through the repair line 33 when a bright spot defect occurs on the display substrate, thereby repairing the sub-pixel to a dark spot.

[0120] Figure 6 is an enlarged view of the first and second storage capacitor regions in Figure 5 . As shown in Figures 5 and 6 , in an exemplary embodiment, the first storage capacitor may include at least a first electrode plate 71 and a third electrode plate 73, with the orthographic projection of the third electrode plate 73 on the substrate at least partially overlapping the orthographic projection of the first electrode plate 71 on the substrate. The second storage capacitor may include at least a second electrode plate 72 and a fourth electrode plate 74, with the orthographic projection of the fourth electrode plate 74 on the substrate at least partially overlapping the orthographic projection of the second electrode plate 72 on the substrate.

[0121] In an exemplary embodiment, the first electrode plate 71 and the second electrode plate 72 can be disposed in the first conductive layer, the third electrode plate 73 and the fourth electrode plate 74 can be disposed in the second conductive layer, the first electrode plate 71 can serve as the gate electrode of the third transistor T3, the second electrode plate 72 is connected to the third electrode plate 73, and the fourth electrode plate 74 is connected to the first power line 51.

[0122] As shown in Figures 5 and 6, in an exemplary embodiment, at least one circuit unit may further include a first connection electrode 41, which is respectively connected to the second electrode of the first transistor T1, the first electrode of the second transistor T2 and the first electrode plate 71 of the first storage capacitor. The first connection electrode 41 can serve as the first node N1 of the pixel driving circuit.

[0123] In an exemplary embodiment, at least one circuit unit may further include a second connection electrode 42, which is respectively connected to the second electrode of the fourth transistor T4, the second electrode of the ninth transistor T9, the third plate 73 of the first storage capacitor, and the second plate 72 of the second storage capacitor. The second connection electrode 42 can serve as the fifth node N5 in the pixel driving circuit.

[0124] In an exemplary embodiment, an orthographic projection of the first power line 51 on the substrate at least partially overlaps an orthographic projection of the second connection electrode 42 on the substrate to shield the fifth node from influence of other signals in the pixel driving circuit.

[0125] In an exemplary embodiment, at least one circuit unit may further include a first shielding electrode 36, the first shielding electrode 36 being connected to the fourth electrode plate 74, with an orthographic projection of the first shielding electrode 36 on the substrate at least partially overlapping an orthographic projection of the semiconductor layer between the two gate electrodes of the first transistor T1 on the substrate. In an exemplary embodiment, the first shielding electrode 36 is configured to shield the first transistor T1 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect. In an exemplary embodiment, the first shielding electrode 36 is configured to shield the first transistor T1 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0126] In an exemplary embodiment, at least one circuit unit may further include a second shielding electrode 37. The second shielding electrode 37 is connected to the fourth electrode plate 74. The orthographic projection of the second shielding electrode 37 on the substrate at least partially overlaps with the orthographic projection of the semiconductor layer between the two gate electrodes of the second transistor T2 on the substrate. In an exemplary embodiment, the second shielding electrode 37 is configured to shield the second transistor T2 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0127] In an exemplary embodiment, the fourth plate 74 , the first shield electrode 36 , and the second shield electrode 37 may be an integral structure connected to each other.

[0128] In an exemplary embodiment, at least one circuit unit may further include a third shielding electrode 38. The third shielding electrode 38 is connected to the fourth electrode plate 74. The orthographic projection of the third shielding electrode 38 on the substrate at least partially overlaps with the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 on the substrate. In an exemplary embodiment, the third shielding electrode 38 is configured to shield the fourth transistor T4 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0129] In an exemplary embodiment, at least one circuit unit may further include a fourth shielding electrode 39, the fourth shielding electrode 39 being connected to the fourth electrode plate 74. The orthographic projection of the fourth shielding electrode 39 on the substrate at least partially overlaps with the orthographic projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 on the substrate. In an exemplary embodiment, the fourth shielding electrode 39 is configured to shield the ninth transistor T9 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0130] The following is an illustrative explanation of the preparation process of the display substrate. The "patterning process" mentioned in the present disclosure includes processes such as coating photoresist, mask exposure, development, etching, and stripping photoresist for metal materials, inorganic materials, or transparent conductive materials, and includes processes such as coating organic materials, mask exposure, and development for organic materials. Deposition can be carried out by any one or more of sputtering, evaporation, and chemical vapor deposition, coating can be carried out by any one or more of spraying, spin coating, and inkjet printing, and etching can be carried out by any one or more of dry etching and wet etching, and the present disclosure does not limit this. "Thin film" refers to a thin film made by deposition, coating, or other processes on a substrate of a certain material. If the "thin film" does not require a patterning process during the entire production process, the "thin film" can also be called a "layer". If the "thin film" requires a patterning process during the entire production process, it is called a "thin film" before the patterning process and a "layer" after the patterning process. The "layer" after the patterning process contains at least one "pattern". As used in this disclosure, "A and B are disposed in the same layer" means that A and B are formed simultaneously through the same patterning process, and the "thickness" of the film layer refers to the dimension of the film layer in a direction perpendicular to the display substrate. In exemplary embodiments of this disclosure, "the orthographic projection of B is within the range of the orthographic projection of A" or "the orthographic projection of A contains the orthographic projection of B" means that the boundary of the orthographic projection of B falls within the boundary of the orthographic projection of A, or that the boundary of the orthographic projection of A overlaps with the boundary of the orthographic projection of B.

[0131] In an exemplary embodiment, taking one circuit unit in the nth unit row as an example, the preparation process of the display substrate of this embodiment may include the following operations.

[0132] (11) Forming a semiconductor layer pattern. In an exemplary embodiment, forming a semiconductor layer pattern may include: sequentially depositing a first insulating film and a semiconductor film on a substrate, patterning the semiconductor film through a patterning process to form a first insulating layer covering the substrate, and a semiconductor layer disposed on the first insulating layer, as shown in FIG. 7 .

[0133] In an exemplary embodiment, the semiconductor layer of each circuit unit in the display substrate may include at least a first active layer 11 of a first transistor T1, a second active layer 12 of a second transistor T2, a third active layer 13 of a third transistor T3, a fourth active layer 14 of a fourth transistor T4, a fifth active layer 15 of a fifth transistor T5, a sixth active layer 16 of a sixth transistor T6, a seventh active layer 17 of a seventh transistor T7, an eighth active layer 18 of an eighth transistor T8, and a ninth active layer 19 of a ninth transistor T9, and the first to third active layers 11 to 13 and the fifth to eighth active layers 15 to 18 may be an integrated structure connected to each other, and the fourth active layer 14 and the ninth active layer 19 may be an integrated structure connected to each other.

[0134] In an exemplary embodiment, the fourth active layer 14 and the ninth active layer 19 of the nth unit row may be located on a side of the third active layer 13 close to the (n-1)th unit row, that is, the fourth active layer 14 and the ninth active layer 19 may be located on a side of the third active layer 13 of the circuit unit opposite to the second direction Y. The first active layer 11, the second active layer 12, and the fifth active layer 15 to the eighth active layer 18 of the nth unit row may be located on a side of the third active layer 13 close to the (n+1)th unit row, that is, the first active layer 11, the second active layer 12, and the fifth active layer 15 to the eighth active layer 18 may be located on a side of the third active layer 13 of the circuit unit in the second direction Y.

[0135] In an exemplary embodiment, the first active layer 11 may be located on one side of the third active layer 13 of the present circuit unit in the second direction Y, the fifth active layer 15 may be located on one side of the first active layer 11 of the present circuit unit in the second direction Y, and the eighth active layer 18 may be located on one side of the fifth active layer 15 of the present circuit unit in the second direction Y. The second active layer 12 may be located on one side of the third active layer 13 of the present circuit unit in the second direction Y, the sixth active layer 16 may be located on one side of the second active layer 12 of the present circuit unit in the second direction Y, and the seventh active layer 17 may be located on one side of the sixth active layer 16 of the present circuit unit in the second direction Y.

[0136] In an exemplary embodiment, the first active layer 11, the fourth active layer 14, the fifth active layer 15 and the eighth active layer 18 can be located on one side of the first direction X of the circuit unit (such as the side opposite to the first direction X), and the second active layer 12, the sixth active layer 16, the seventh active layer 17 and the ninth active layer 19 can be located on the other side of the first direction X of the circuit unit (such as one side of the first direction X).

[0137] In an exemplary embodiment, the first active layer 11, the second active layer 12, the fourth active layer 14, and the ninth active layer 19 may have an L shape, the third active layer 13 may have a C shape, and the fifth active layer 15, the sixth active layer 16, the seventh active layer 17, and the eighth active layer 18 may have an I shape.

[0138] In an exemplary embodiment, the fourth active layer 14 and the ninth active layer 19 may be shaped like an “L” so that a node between two gate electrodes of the fourth transistor T4 and the ninth transistor T9 is closer to the VDD signal.

[0139] In an exemplary embodiment, the active layer of each transistor may include a first region, a second region, and a channel region located between the first and second regions. In an exemplary embodiment, the second region 11-2 of the first active layer and the first region 12-1 of the second active layer may be interconnected, and the second region 11-2 of the first active layer may serve as the first region 12-1 of the second active layer. The first region 13-1 of the third active layer, the second region 15-2 of the fifth active layer, and the second region 18-2 of the eighth active layer may be interconnected, and the first region 13-1 of the third active layer may serve as both the second region 15-2 of the fifth active layer and the second region 18-2 of the eighth active layer, forming a second node N2 of the pixel driving circuit. The second region 12-2 of the second active layer, the second region 13-2 of the third active layer, and the first region 16-1 of the sixth active layer may be interconnected, and the second region 13-2 of the third active layer may serve as both the second region 12-2 of the second active layer and the first region 16-1 of the sixth active layer, forming a third node N3 of the pixel driving circuit. The second region 14-2 of the fourth active layer and the second region 19-2 of the ninth active layer may be connected to each other, and the second region 14-2 of the fourth active layer may serve as the second region 19-2 of the ninth active layer. The second region 16-2 of the sixth active layer and the second region 17-2 of the seventh active layer may be connected to each other, and the second region 16-2 of the sixth active layer may serve as the second region 17-2 of the seventh active layer, forming a fourth node N4 of the pixel driving circuit. The first region 11-1 of the first active layer, the first region 14-1 of the fourth active layer, the first region 15-1 of the fifth active layer, the first region 17-1 of the seventh active layer, the first region 18-1 of the eighth active layer, and the first region 19-1 of the ninth active layer may be separately provided. The first region 14-1 of the fourth active layer may be located on a side of the channel region of the fourth active layer closer to the third active layer 13, and the first region 19-1 of the ninth active layer may be located on a side of the channel region of the ninth active layer farther from the third active layer 13.

[0140] In an exemplary embodiment, the display substrate may further include a first active connection line 10 and a second active connection line 20. The first active connection line 10 may be located on one side of the ninth active layer 19 in the second direction Y and connected to the first region 19-1 of the ninth active layer of each circuit unit. The second active connection line 20 may be located on one side of the seventh active layer 17 in the second direction Y and connected to the first region 17-1 of the seventh active layer of each circuit unit.

[0141] In an exemplary embodiment, the first active connection line 10 may be shaped like a zigzag line, with the main portion extending along the first direction X. The first active connection line 10 and the ninth active layers of the plurality of circuit units may be interconnected as an integral structure. Because the first region of the ninth active layer is connected to a subsequently formed first reference signal line, the first active connection line 10 can be reused as a first reference signal line extending along the first direction X. This not only ensures that the first regions of the plurality of ninth active layers in a cell row have the same potential, but also reduces the voltage drop of the first reference signal, thereby improving the uniformity of the panel, preventing display defects on the display substrate, and ensuring the display quality of the display substrate.

[0142] In an exemplary embodiment, the second active connection line 20 may be in the shape of a straight line with a main portion extending along the first direction X. The second active connection line 20 and the seventh active layers of the plurality of circuit units may be interconnected as an integral structure. Since the first region of the seventh active layer is connected to a subsequently formed second initial signal line, the second active connection line 20 can be reused as a second initial signal line extending along the first direction X. This not only ensures that the first regions of the plurality of seventh active layers in a cell row have the same potential, but also reduces the voltage drop of the second initial signal, thereby improving the uniformity of the panel, preventing display defects on the display substrate, and ensuring the display quality of the display substrate.

[0143] (12) Forming a first conductive layer pattern. In an exemplary embodiment, forming the first conductive layer pattern may include: sequentially depositing a second insulating film and a first conductive film on the substrate having the aforementioned pattern formed thereon, patterning the first conductive film through a patterning process to form a second insulating layer covering the semiconductor layer pattern, and a first conductive layer pattern disposed on the second insulating layer, as shown in FIG8A and FIG8B , FIG8B being a schematic diagram of the first conductive layer in FIG8A . In an exemplary embodiment, the first conductive layer may be referred to as a first gate metal (GATE1) layer.

[0144] In an exemplary embodiment, the first conductive layer pattern of each circuit unit in the display substrate includes at least: a first gate electrode 21, a second gate electrode 22, a fourth gate electrode 24, a fifth gate electrode 25, a sixth gate electrode 26, a ninth gate electrode 29, a first scan signal line 61, a first plate 71 of a first storage capacitor, and a second plate 72 of a second storage capacitor.

[0145] In an exemplary embodiment, the first gate electrode 21 may be in an L-shape and may be located on one side of the first electrode 71 in the second direction Y. The region where the first gate electrode 21 overlaps with the first active layer may serve as the gate electrode of the first transistor T1 of the dual-gate structure.

[0146] In an exemplary embodiment, the second gate electrode 22 can be in a "T" shape and can be located on one side of the first electrode 71 in the second direction Y. The area where the second gate electrode 22 overlaps with the second active layer can serve as the gate electrode of the second transistor T2 of the dual-gate structure.

[0147] In an exemplary embodiment, the fourth gate electrode 24 may be in an "L" shape and may be located on the side of the second electrode 72 in the opposite direction of the second direction Y. The area where the fourth gate electrode 24 overlaps with the fourth active layer may serve as the gate electrode of the fourth transistor T4 of the dual-gate structure.

[0148] In an exemplary embodiment, the fifth gate electrode 25 may be in the shape of a strip extending along the second direction Y and may be located on one side of the first gate electrode 21 in the second direction Y. The area where the fifth gate electrode 25 overlaps with the fifth active layer may serve as the gate electrode of the fifth transistor T5.

[0149] In an exemplary embodiment, the sixth gate electrode 26 may be in a strip shape extending along the first direction X and may be located on one side of the second gate electrode 22 in the second direction Y. The area where the sixth gate electrode 26 overlaps with the sixth active layer may serve as the gate electrode of the sixth transistor T6.

[0150] In an exemplary embodiment, the ninth gate electrode 29 may be in a T-shape and may be located on the side of the second electrode plate 72 in the opposite direction of the second direction Y. The area where the ninth gate electrode 29 overlaps with the ninth active layer may serve as the gate electrode of the ninth transistor T9 of the dual-gate structure.

[0151] In an exemplary embodiment, the first scan signal line 61 may be shaped as a line having a main portion extending along the first direction X, and may be located on one side of the fifth gate electrode 25 and the sixth gate electrode 26 in the second direction Y. The region where the first scan signal line 61 overlaps with the seventh active layer may serve as the gate electrode of the seventh transistor T7, and the region where the first scan signal line 61 overlaps with the eighth active layer may serve as the gate electrode of the eighth transistor T8.

[0152] In an exemplary embodiment, the shape of the first electrode plate 71 of the first storage capacitor can be rectangular, and the orthographic projection of the first electrode plate 71 on the substrate at least partially overlaps with the orthographic projection of the third active layer of the third transistor T3 on the substrate. The first electrode plate 71 can simultaneously serve as the lower plate of the first storage capacitor and the gate electrode of the third transistor T3.

[0153] In an exemplary embodiment, the main body of the second electrode plate 72 of the second storage capacitor can be rectangular and can be located on one side of the first electrode plate 71 opposite to the second direction Y, and on one side of the fourth gate electrode 24 and the ninth gate electrode 29 in the second direction Y. That is, in the second direction Y, the second electrode plate 72 is located between the first electrode plate 71 and the fourth gate electrode 24 (ninth gate electrode 29), and the orthographic projection of the second electrode plate 72 on the substrate does not overlap with the orthographic projection of the semiconductor layer on the substrate. In an exemplary embodiment, the second electrode plate 72 can serve as the lower plate of the second storage capacitor.

[0154] In an exemplary embodiment, the area where the first active connection line 10 connects to the first region of the ninth active layer is bent toward the ninth active layer, forming a recessed portion on the side of the first active connection line 10 away from the ninth active layer. A protrusion 72-1 is provided on the side of the second electrode plate 72 proximal to the first active connection line 10. The protrusion 72-1 may be rectangular in shape. A first end of the protrusion 72-1 is connected to the second electrode plate 72, and a second end of the protrusion 72-1 extends into the recessed portion of the first active connection line 10.

[0155] In an exemplary embodiment, the second electrode plate 72 and the protrusion 72-1 can be an integral structure connected to each other. The present disclosure can effectively increase the area of ​​the second electrode plate 72 and the capacitance of the second storage capacitor by providing the concave portion of the first active connection line 10 and the protrusion 72-1 of the second electrode plate 72.

[0156] In an exemplary embodiment, after forming the first conductive layer pattern, the first conductive layer can be used as a shield to perform conductorization on the semiconductor layer. The semiconductor layer in the area shielded by the first conductive layer forms the channel region of the first transistor T1 to the ninth transistor T9, and the semiconductor layer in the area not shielded by the first conductive layer is conductorized, that is, the first region and the second region of the first active layer to the ninth active layer are all conductorized.

[0157] (13) Forming a second conductive layer pattern. In an exemplary embodiment, forming the second conductive layer pattern may include: sequentially depositing a third insulating film and a second conductive film on the substrate having the aforementioned pattern formed thereon, patterning the second conductive film using a patterning process to form a third insulating layer covering the first conductive layer, and a second conductive layer pattern disposed on the third insulating layer, as shown in FIG9A and FIG9B , where FIG9B is a schematic diagram of the second conductive layer in FIG9A . In an exemplary embodiment, the second conductive layer may be referred to as a second gate metal (GATE2) layer.

[0158] In an exemplary embodiment, the second conductive layer pattern of each circuit unit in the display substrate includes at least: a first light-emitting signal line 31, a second light-emitting signal line 32, a repair line 33, a third plate 73 of a first storage capacitor, a fourth plate 74 of a second storage capacitor, a first initial signal line 81, and a second reference signal line 92.

[0159] In an exemplary embodiment, the shapes of the first light-emitting signal line 31, the second light-emitting signal line 32, the repair line 33, the first initial signal line 81 and the second reference signal line 92 can be a line shape in which the main part extends along the first direction X, the first light-emitting signal line 31, the second light-emitting signal line 32, the repair line 33 and the first initial signal line 81 can be located between the first gate electrode 21 and the first scanning signal line 61, and the second reference signal line 92 can be located on the side of the fourth gate electrode 24 in the opposite direction of the second direction Y.

[0160] In an exemplary embodiment, the first light-emitting signal line 31 can be located on one side of the second direction Y of the first gate electrode 21 of the present circuit unit, the first initial signal line 81 can be located on one side of the second direction Y of the first light-emitting signal line 31 of the present circuit unit, the second light-emitting signal line 32 can be located on one side of the second direction Y of the first initial signal line 81 of the present circuit unit, and the repair line 33 can be located on one side of the second direction Y of the second light-emitting signal line 32 of the present circuit unit, that is, the second light-emitting signal line 32 and the first initial signal line 81 can be located between the first light-emitting signal line 31 and the repair line 33.

[0161] In an exemplary embodiment, a first light-emitting connection block 31-1 is provided on a side of the first light-emitting signal line 31 near the first initial signal line 81. The first light-emitting connection block 31-1 can be provided in each circuit unit. A first end of the first light-emitting connection block 31-1 is connected to the first light-emitting signal line 31, and a second end of the first light-emitting connection block 31-1 extends toward the first initial signal line 81. The first light-emitting connection block 31-1 is configured to be connected to the fifth gate electrode 25 via a subsequently formed seventh connection electrode. In an exemplary embodiment, the first light-emitting signal line 31 and the plurality of first light-emitting connection blocks 31-1 can be an interconnected, integrated structure.

[0162] In an exemplary embodiment, a first preliminary connection block 81-1 is provided on a side of the first preliminary signal line 81 near the first light-emitting signal line 31. The first preliminary connection block 81-1 can be provided in each circuit unit. A first end of the first preliminary connection block 81-1 is connected to the first preliminary signal line 81, and a second end of the first preliminary connection block 81-1 extends toward the first light-emitting signal line 31. The first preliminary connection block 81-1 is configured to connect to the first region of the first active layer via a subsequently formed ninth connection electrode. In an exemplary embodiment, the first preliminary signal line 81 and the plurality of first preliminary connection blocks 81-1 can be an interconnected, integrated structure.

[0163] In an exemplary embodiment, a second light-emitting connection block 32-1 is provided on one side of the second light-emitting signal line 32 close to the first initial signal line 81. The second light-emitting connection block 32-1 can be provided in each circuit unit. The first end of the second light-emitting connection block 32-1 is connected to the second light-emitting signal line 32, and the second end of the second light-emitting connection block 32-1 extends toward the direction of the first initial signal line 81. The second light-emitting connection block 32-1 is configured to be connected to the sixth gate electrode 26 through the eighth connection electrode formed subsequently. In an exemplary embodiment, the second light-emitting signal line 32 and the plurality of second light-emitting connection blocks 32-1 can be an integrated structure connected to each other.

[0164] In an exemplary embodiment, the second reference signal line 92 does not overlap with the orthographic projection of the fourth active layer of the fourth transistor T4 on the substrate; the second reference signal line 92 does not overlap with the orthographic projection of the ninth active layer of the ninth transistor T9 on the substrate, which greatly reduces the capacitance between the scanning signal and the signal of the second reference signal line 92 and improves the driving load of the gate drive circuit.

[0165] In an exemplary embodiment, a second reference connection block 92-1 is provided on a side of the second reference signal line 92 of the nth cell row away from the second electrode plate 72 of the nth cell row. This second reference connection block 92-1 can be provided in each circuit cell. A first end of the second reference connection block 92-1 is connected to the second reference signal line 92, and a second end of the second reference connection block 92-1 extends away from the second electrode plate 72, i.e., toward the (n-1)th cell row. In an exemplary embodiment, the second reference connection block 92-1 of the second reference signal line 92 in the nth cell row is configured to connect to the first region of the eighth active layer in the (n-1)th cell row via a subsequently formed sixth connection electrode, thereby providing a second reference signal to the first electrode of the eighth transistor T8 in the (n-1)th cell row. In an exemplary embodiment, the second reference signal line 92 and the plurality of second reference connection blocks 92-1 can be an interconnected, integral structure.

[0166] In an exemplary embodiment, the contour shape of the third plate 73 of the first storage capacitor can be rectangular, the corners of the rectangle can be chamfered, and it can be located between the first light-emitting signal line 31 and the second reference signal line 92 of the circuit unit. The positive projection of the third plate 73 on the substrate at least partially overlaps with the positive projection of the first plate 71 on the substrate. The third plate 73 can serve as the upper plate of the first storage capacitor, and the first plate 71 and the third plate 73 constitute the first storage capacitor of the pixel driving circuit.

[0167] In an exemplary embodiment, the contour shape of the fourth plate 74 of the second storage capacitor can be similar to that of the second plate 72, and can be located between the second reference signal line 92 and the third plate 73 of the circuit unit. The orthographic projection of the fourth plate 74 on the substrate at least partially overlaps with the orthographic projection of the second plate 72 on the substrate. The fourth plate 74 can serve as the upper plate of the second storage capacitor, and the second plate 72 and the fourth plate 74 constitute the second storage capacitor C2 of the pixel driving circuit.

[0168] In an exemplary embodiment, a first shielding electrode 36 is disposed on a side of the fourth electrode plate 74 proximal to the first light-emitting signal line 31. The first shielding electrode 36 is located on one side of the fourth electrode plate 74 in the second direction Y. The first shielding electrode 36 may be L-shaped and may be disposed in each circuit unit. The L-shaped first shielding electrode 36 may include a first extension segment 36-1 and a first shielding segment 36-2. The first extension segment 36-1 may be in the shape of a strip extending along the second direction Y. The first end of the first extension segment 36-1 is connected to the fourth electrode plate 74, and the second end of the first extension segment 36-1 extends toward the first light-emitting signal line 31 and is connected to the first end of the first shielding segment 36-2. The first shielding segment 36-2 may be in the shape of a strip extending along the first direction X. The first end of the first shielding segment 36-2 is connected to the second end of the first extending segment 36-1, and the second end of the first shielding segment 36-2 extends along the first direction X. The orthographic projection of the first shielding segment 36-2 on the substrate at least partially overlaps the orthographic projection of the first active layer between the two gate electrodes of the first transistor T1 on the substrate. In an exemplary embodiment, the first shielding electrode 36 is configured to shield the first transistor T1 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving display quality.

[0169] In an exemplary embodiment, the fourth plate 74 and the first shield electrode 36 may be an integral structure connected to each other.

[0170] In an exemplary embodiment, a second shielding electrode 37 is provided on a side of the fourth electrode plate 74 proximal to the first light-emitting signal line 31. The second shielding electrode 37 is located on one side of the fourth electrode plate 74 in the second direction Y. The second shielding electrode 37 may be L-shaped and may be provided in each circuit unit. The L-shaped second shielding electrode 37 may include a second extension segment 37-1 and a second shielding segment 37-2. The second extension segment 37-1 may be in the shape of a strip extending along the second direction Y. The first end of the second extension segment 37-1 is connected to the fourth electrode plate 74, and the second end of the second extension segment 37-1 extends toward the first light-emitting signal line 31 and is connected to the second shielding segment 37-2. The second shielding segment 37-2 may be in the shape of a strip extending in the opposite direction of the first direction X. The first end of the second shielding segment 37-2 is connected to the second end of the second extending segment 37-1, and the second end of the second shielding segment 37-2 extends in the opposite direction of the first direction X. The orthographic projection of the second shielding segment 37-2 on the substrate at least partially overlaps with the orthographic projection of the second active layer between the two gate electrodes of the second transistor T2 on the substrate. In an exemplary embodiment, the second shielding electrode 37 is configured to shield the second transistor T2 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0171] In an exemplary embodiment, the fourth electrode plate 74 and the second shield electrode 37 may be an integral structure connected to each other.

[0172] In an exemplary embodiment, a third shielding electrode 38 is disposed on a side of the fourth plate 74 away from the first light-emitting signal line 31. The third shielding electrode 38 is located on a side of the fourth plate 74 opposite to the second direction Y. The third shielding electrode 38 may be in the shape of a strip extending along the second direction Y. A first end of the third shielding electrode 38 is connected to the fourth plate 74, and a second end of the third shielding electrode 38 extends toward the second reference signal line 92. The third shielding electrode 38 may be disposed in each circuit unit. The orthographic projection of the third shielding electrode 38 on the substrate at least partially overlaps with the orthographic projection of the fourth active layer between the two gate electrodes of the fourth transistor T4 on the substrate. In an exemplary embodiment, the third shielding electrode 38 is configured to shield the fourth transistor T4 from the effects of data voltage jumps, preventing the data voltage jumps from affecting the normal operation of the pixel driver circuit and improving the display effect.

[0173] In an exemplary embodiment, the fourth plate 74 and the third shield electrode 38 may be an integral structure connected to each other.

[0174] In an exemplary embodiment, a fourth shielding electrode 39 is provided on a side of the fourth plate 74 away from the first light-emitting signal line 31. The fourth shielding electrode 39 is located on one side of the fourth plate 74 in the second direction Y. The fourth shielding electrode 39 may be in the shape of a strip extending along the second direction Y. A first end of the fourth shielding electrode 39 is connected to the fourth plate 74, and a second end of the fourth shielding electrode 39 extends toward the second reference signal line 92. The fourth shielding electrode 39 may be provided in each circuit unit. The orthographic projection of the fourth shielding electrode 39 on the substrate at least partially overlaps with the orthographic projection of the ninth active layer between the two gate electrodes of the ninth transistor T9 on the substrate. In an exemplary embodiment, the fourth shielding electrode 39 is configured to shield the ninth transistor T9 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0175] In an exemplary embodiment, the fourth electrode plate 74 and the fourth shielding electrode 39 may be an integral structure connected to each other.

[0176] In an exemplary embodiment, a first opening 75 is provided on the third electrode plate 73 of each circuit unit. The first opening 75 may be located in the middle of the third electrode plate 73 and may be rectangular, forming a ring-shaped structure. The first opening 75 exposes the third insulating layer covering the first electrode plate 71, and the orthographic projection of the first electrode plate 71 on the substrate includes the orthographic projection of the first opening 75 on the substrate. In an exemplary embodiment, the first opening 75 is configured to accommodate a tenth via hole formed subsequently. The tenth via hole is located within the first opening 75 and exposes the first electrode plate 71, allowing a first connecting electrode formed subsequently to connect to the first electrode plate 71.

[0177] In an exemplary embodiment, a second opening 76 is provided on the fourth electrode plate 74 of each circuit unit. The second opening 76 may be located in the middle of the fourth electrode plate 74 and may be rectangular, forming a ring-shaped structure. The second opening 76 exposes the third insulating layer covering the second electrode plate 72, and the orthographic projection of the second electrode plate 72 on the substrate includes the orthographic projection of the second opening 76 on the substrate. In an exemplary embodiment, the second opening 76 is configured to accommodate a subsequently formed eleventh via. The eleventh via is located within the second opening 76 and exposes the second electrode plate 72, allowing a subsequently formed second connecting electrode to be connected to the second electrode plate 72.

[0178] In an exemplary embodiment, the repair line 33 is a pre-set repair signal line, which is configured to input a signal to the anode of the sub-pixel with the bright spot defect through the repair line 33 to repair it into a dark spot when a bright spot defect occurs on the display substrate.

[0179] (14) Forming a fourth insulating layer pattern. In an exemplary embodiment, forming the fourth insulating layer pattern may include: depositing a fourth insulating film on the substrate having the aforementioned pattern formed thereon, patterning the fourth insulating film using a patterning process to form a fourth insulating layer covering the second conductive layer, wherein a plurality of vias are provided in each circuit unit, as shown in FIG. 10 .

[0180] In an exemplary embodiment, the multiple vias of each circuit unit in the display substrate include at least: a first via V1, a second via V2, a third via V3, a fourth via V4, a fifth via V5, a sixth via V6, a seventh via V7, an eighth via V8, a ninth via V9, a tenth via V10, an eleventh via V11, a twelfth via V12, a thirteenth via V13, a fourteenth via V14, a fifteenth via V15, a sixteenth via V16, a seventeenth via V17, an eighteenth via V18, a nineteenth via V19, a twentieth via V20, a twenty-first via V21, a twenty-second via V22, and a twenty-third via V23.

[0181] In an exemplary embodiment, the orthographic projection of the first via hole V1 on the substrate is located within the range of the orthographic projection of the first region of the first active layer on the substrate, the fourth insulating layer, the third insulating layer, and the second insulating layer within the first via hole V1 are etched away to expose the surface of the first region of the first active layer, and the first via hole V1 is configured to connect a subsequently formed ninth connecting electrode to the first region of the first active layer through the via hole.

[0182] In an exemplary embodiment, the orthographic projection of the second via hole V2 on the substrate is located within the range of the orthographic projection of the second area of ​​the first active layer (also the first area of ​​the second active layer) on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the second via hole V2 are etched away to expose the surface of the second area of ​​the first active layer (also the first area of ​​the second active layer), and the second via hole V2 is configured to connect the subsequently formed first connecting electrode to the second area of ​​the first active layer (also the first area of ​​the second active layer) through the via hole.

[0183] In an exemplary embodiment, the orthographic projection of the third via hole V3 on the substrate is located within the range of the orthographic projection of the first area of ​​the fourth active layer on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer within the third via hole V3 are etched away to expose the surface of the first area of ​​the fourth active layer, and the third via hole V3 is configured to connect a subsequently formed third connecting electrode to the first area of ​​the fourth active layer through the via hole.

[0184] In an exemplary embodiment, the orthographic projection of the fourth via hole V4 on the substrate is located within the range of the orthographic projection of the second area of ​​the fourth active layer (also the second area of ​​the ninth active layer) on the substrate, and the fourth insulating layer, the third insulating layer and the second insulating layer in the fourth via hole V4 are etched away to expose the surface of the second area of ​​the fourth active layer (also the second area of ​​the ninth active layer), and the fourth via hole V4 is configured to connect a subsequently formed second connecting electrode to the second area of ​​the fourth active layer (also the second area of ​​the ninth active layer) through the via hole.

[0185] In an exemplary embodiment, the orthographic projection of the fifth via hole V5 on the substrate is located within the range of the orthographic projection of the first region of the fifth active layer on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the fifth via hole V5 are etched away to expose the surface of the first region of the fifth active layer, and the fifth via hole V5 is configured to connect a subsequently formed fourth connecting electrode to the first region of the fifth active layer through the via hole.

[0186] In an exemplary embodiment, the orthographic projection of the sixth via hole V6 on the substrate is located within the range of the orthographic projection of the second area of ​​the sixth active layer (also the second area of ​​the seventh active layer) on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the sixth via hole V6 are etched away to expose the surface of the second area of ​​the sixth active layer (also the second area of ​​the seventh active layer), and the sixth via hole V6 is configured to connect the subsequently formed fifth connecting electrode to the second area of ​​the sixth active layer (also the second area of ​​the seventh active layer) through the via hole.

[0187] In an exemplary embodiment, the orthographic projection of the seventh via V7 on the substrate is located within the range of the orthographic projection of the first region of the seventh active layer on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the seventh via V7 are etched away to expose the surface of the first region of the seventh active layer, and the seventh via V7 is configured to connect a subsequently formed second initial signal line to the first region of the seventh active layer through the via.

[0188] In an exemplary embodiment, the orthographic projection of the eighth via V8 on the substrate is located within the range of the orthographic projection of the first region of the eighth active layer on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the eighth via V8 are etched away to expose the surface of the first region of the eighth active layer, and the eighth via V8 is configured to connect the subsequently formed sixth connecting electrode to the first region of the eighth active layer through the via hole.

[0189] In an exemplary embodiment, the orthographic projection of the ninth via V9 on the substrate is located within the range of the orthographic projection of the first region of the ninth active layer on the substrate, the fourth insulating layer, the third insulating layer and the second insulating layer in the ninth via V9 are etched away to expose the surface of the first region of the ninth active layer, and the ninth via V9 is configured to connect a subsequently formed first reference signal line to the first region of the ninth active layer through the via.

[0190] In an exemplary embodiment, the orthographic projection of the tenth via hole V10 on the substrate is located within the range of the orthographic projection of the first opening 75 of the third electrode plate 73 on the substrate, the fourth insulating layer and the third insulating layer in the tenth via hole V10 are etched away, exposing the surface of the first electrode plate 71, and the tenth via hole V10 is configured to connect the subsequently formed first connecting electrode to the first electrode plate 71 through the via hole.

[0191] In an exemplary embodiment, the orthographic projection of the eleventh via hole V11 on the substrate is located within the range of the orthographic projection of the second opening 76 of the fourth electrode plate 74 on the substrate, the fourth insulating layer and the third insulating layer in the eleventh via hole V11 are etched away to expose the surface of the second electrode plate 72, and the eleventh via hole V11 is configured to connect a subsequently formed second connecting electrode to the second electrode plate 72 through the via hole.

[0192] In an exemplary embodiment, the orthographic projection of the twelfth via hole V12 on the substrate is located within the range of the orthographic projection of the third electrode plate 73 on the substrate, the fourth insulating layer in the twelfth via hole V12 is etched away to expose the surface of the third electrode plate 73, and the twelfth via hole V12 is configured to connect the subsequently formed second connecting electrode to the third electrode plate 73 through the via hole.

[0193] In an exemplary embodiment, the orthographic projection of the thirteenth via hole V13 on the substrate is located within the range of the orthographic projection of the fourth electrode plate 74 on the substrate, the fourth insulating layer in the thirteenth via hole V13 is etched away to expose the surface of the fourth electrode plate 74, and the thirteenth via hole V13 is configured to connect a subsequently formed first power connection line to the fourth electrode plate 74 through the via hole.

[0194] In an exemplary embodiment, the orthographic projection of the fourteenth via hole V14 on the substrate is located within the range of the orthographic projection of the first gate electrode 21 on the substrate, the fourth insulating layer and the third insulating layer in the fourteenth via hole V14 are etched away to expose the surface of the first gate electrode 21, and the fourteenth via hole V14 is configured to connect the subsequently formed fourth scanning signal line to the first gate electrode 21 through the via hole.

[0195] In an exemplary embodiment, the orthographic projection of the fifteenth via hole V15 on the substrate is located within the range of the orthographic projection of the second gate electrode 22 on the substrate, the fourth insulating layer and the third insulating layer in the fifteenth via hole V15 are etched away to expose the surface of the second gate electrode 22, and the fifteenth via hole V15 is configured to connect the subsequently formed fifth scanning signal line to the second gate electrode 22 through the via hole.

[0196] In an exemplary embodiment, the orthographic projection of the sixteenth via hole V16 on the substrate is located within the range of the orthographic projection of the fourth gate electrode 24 on the substrate, the fourth insulating layer and the third insulating layer in the sixteenth via hole V16 are etched away to expose the surface of the fourth gate electrode 24, and the sixteenth via hole V16 is configured to connect the subsequently formed third scan signal line to the fourth gate electrode 24 through the via hole.

[0197] In an exemplary embodiment, the orthographic projection of the seventeenth via hole V17 on the substrate is located within the range of the orthographic projection of the fifth gate electrode 25 on the substrate, the fourth insulating layer and the third insulating layer in the seventeenth via hole V17 are etched away to expose the surface of the fifth gate electrode 25, and the seventeenth via hole V17 is configured to connect the subsequently formed seventh connecting electrode to the fifth gate electrode 25 through the via hole.

[0198] In an exemplary embodiment, the orthographic projection of the eighteenth via hole V18 on the substrate is located within the range of the orthographic projection of the sixth gate electrode 26 on the substrate, the fourth insulating layer and the third insulating layer in the eighteenth via hole V18 are etched away to expose the surface of the sixth gate electrode 26, and the eighteenth via hole V18 is configured to connect the subsequently formed eighth connecting electrode to the sixth gate electrode 26 through the via hole.

[0199] In an exemplary embodiment, the orthographic projection of the nineteenth via hole V19 on the substrate is located within the range of the orthographic projection of the ninth gate electrode 29 on the substrate, the fourth insulating layer and the third insulating layer in the nineteenth via hole V19 are etched away to expose the surface of the ninth gate electrode 29, and the nineteenth via hole V19 is configured to connect a subsequently formed second scanning signal line to the ninth gate electrode 29 through the via hole.

[0200] In an exemplary embodiment, the orthographic projection of the twentieth via hole V20 on the substrate is located within the range of the orthographic projection of the first light-emitting connection block 31-1 of the first light-emitting signal line 31 on the substrate, the fourth insulating layer in the twentieth via hole V20 is etched away, exposing the surface of the first light-emitting connection block 31-1, and the twentieth via hole V20 is configured to connect the subsequently formed seventh connection electrode to the first light-emitting connection block 31-1 through the via hole.

[0201] In an exemplary embodiment, the orthographic projection of the twenty-first via hole V21 on the substrate is located within the range of the orthographic projection of the second light-emitting connection block 32-1 of the second light-emitting signal line 32 on the substrate, the fourth insulating layer in the twenty-first via hole V21 is etched away, exposing the surface of the second light-emitting connection block 32-1, and the twenty-first via hole V21 is configured to connect the subsequently formed eighth connection electrode to the second light-emitting connection block 32-1 through the via hole.

[0202] In an exemplary embodiment, the orthographic projection of the twenty-second via V22 on the substrate is located within the range of the orthographic projection of the second reference connection block 92-1 of the second reference signal line 92 on the substrate, the fourth insulating layer in the twenty-second via V22 is etched away to expose the surface of the second reference connection block 92-1, and the twenty-second via V22 is configured to connect the subsequently formed sixth connection electrode to the second reference connection block 92-1 through the via.

[0203] In an exemplary embodiment, the orthographic projection of the twenty-third via V23 on the substrate is located within the range of the orthographic projection of the first initial connection block 81-1 of the first initial signal line 81 on the substrate, the fourth insulating layer in the twenty-third via V23 is etched away, exposing the surface of the first initial connection block 81-1, and the twenty-third via V23 is configured to connect the subsequently formed ninth connection electrode to the first initial connection block 81-1 through the via.

[0204] (15) Forming a third conductive layer pattern. In an exemplary embodiment, forming the third conductive layer may include: depositing a third conductive film on the substrate having the aforementioned pattern formed thereon, and patterning the third conductive film using a patterning process to form a third conductive layer disposed on the fourth insulating layer, as shown in FIG. 11A and FIG. 11B , where FIG. 11B is a schematic diagram of the third conductive layer in FIG. 11A . In an exemplary embodiment, the third conductive layer may be referred to as a first source / drain metal (SD1) layer.

[0205] In an exemplary embodiment, the third conductive layer patterns of multiple circuit units in the display substrate may include: a first connecting electrode 41, a second connecting electrode 42, a third connecting electrode 43, a fourth connecting electrode 44, a fifth connecting electrode 45, a sixth connecting electrode 46, a seventh connecting electrode 47, an eighth connecting electrode 48, a ninth connecting electrode 49, a second scanning signal line 62, a third scanning signal line 63, a fourth scanning signal line 64, a fifth scanning signal line 65, a first power supply connecting line 68, a second initial signal line 82, and a first reference signal line 91.

[0206] In an exemplary embodiment, the second scan signal line 62, the third scan signal line 63, the fourth scan signal line 64, the fifth scan signal line 65, the first power connection line 68, the second initial signal line 82, and the first reference signal line 91 may be in the shape of lines whose main portions extend along the first direction X. The second scan signal line 62, the third scan signal line 63, and the first reference signal line 91 may be located on a side of the fourth electrode plate 74 opposite to the second direction Y, the fourth scan signal line 64, the fifth scan signal line 65, and the second initial signal line 82 may be located on a side of the third electrode plate 73 in the second direction Y, and the first power connection line 68 may be located on a side of the fourth electrode plate 74 in the second direction Y. The orthographic projection of the first power connection line 68 on the substrate at least partially overlaps with the orthographic projection of the third electrode plate 73 on the substrate.

[0207] In an exemplary embodiment, the third scan signal line 63 can be located on the side of the fourth electrode 74 opposite to the second direction Y, the second scan signal line 62 can be located on the side of the third scan signal line 63 opposite to the second direction Y, and the first reference signal line 91 can be located on the side of the second scan signal line 62 opposite to the second direction Y.

[0208] In an exemplary embodiment, the fourth scan signal line 64 can be located on one side of the third electrode 73 in the second direction Y, the fifth scan signal line 65 can be located on one side of the fourth scan signal line 64 in the second direction Y, and the second initial signal line 82 can be located on one side of the fifth scan signal line 65 in the second direction Y.

[0209] In an exemplary embodiment, the shape of the first power connection line 68 can be a broken line with the main portion extending along the first direction X, the orthographic projection of the first power connection line 68 on the substrate does not overlap with the orthographic projection of the fourth electrode plate 74 on the substrate, and the first power connection line 68 is configured to be connected to the subsequently formed first power line to form a high-voltage power grid structure with a mesh-like interconnected structure on the display substrate.

[0210] In an exemplary embodiment, the second scan signal line 62 is connected to the ninth gate electrode 29 in each circuit unit through the nineteenth via V19, thereby realizing that the second scan signal line 62 is connected to the ninth gate electrode 29 of the ninth transistor T9, and the second scan signal line 62 can control the conduction and disconnection of the ninth transistor T9.

[0211] In an exemplary embodiment, the fifth scan signal line 65 is connected to the second gate electrode 22 in each circuit unit through the fifteenth via V15, thereby achieving the connection between the fifth scan signal line 65 and the second gate electrode 22 of the second transistor T2, and the fifth scan signal line 65 can control the conduction and disconnection of the second transistor T2.

[0212] In an exemplary embodiment, the second scan signal line 62 and the fifth scan signal line 65 may be extended to the frame area and connected to the same gate driving circuit to output the same scan signal.

[0213] In an exemplary embodiment, the third scan signal line 63 is connected to the fourth gate electrode 24 in each circuit unit through the sixteenth via V16, thereby realizing that the third scan signal line 63 is connected to the fourth gate electrode 24 of the fourth transistor T4, and the third scan signal line 63 can control the conduction and disconnection of the fourth transistor T4.

[0214] In an exemplary embodiment, the fourth scan signal line 64 is connected to the first gate electrode 21 in each circuit unit through the fourteenth via V14, thereby connecting the fourth scan signal line 64 to the first gate electrode 21 of the first transistor T1. The fourth scan signal line 64 can control the on and off of the first transistor T1.

[0215] In an exemplary embodiment, the second initial signal line 82 is connected to the first region of the seventh active layer in each circuit unit through the seventh via V7, thereby realizing that the second initial signal line 82 is connected to the first electrode of the seventh transistor T7, and the second initial signal line 82 can write the second initial signal into the first electrode of the seventh transistor T7.

[0216] In an exemplary embodiment, since the second active connection line 20 of the semiconductor layer is directly connected to the first area of ​​the seventh active layer of multiple circuit units in a unit row, and the second initial signal line 82 of the third conductive layer is connected to the first area of ​​the seventh active layer in multiple circuit units in a unit row through a via, the second active connection line 20 and the second initial signal line 82 constitute a signal line with a double-layer structure, which not only ensures that the first areas of multiple seventh active layers in a unit row have the same potential, but also reduces the resistance of the signal line and the voltage drop of the second initial signal, which is beneficial to improving the uniformity of the panel, avoiding poor display of the display substrate, and ensuring the display effect of the display substrate.

[0217] In an exemplary embodiment, a second initial connection block 82-1 is provided on a side of the second initial signal line 82 close to the fifth scanning signal line 65, a first end of the second initial connection block 82-1 is connected to the second initial signal line 82, and a second end of the second initial connection block 82-1 extends toward the direction of the fifth scanning signal line 65 and is connected to the first area of ​​the seventh active layer through the seventh via hole V7.

[0218] In an exemplary embodiment, the first reference signal line 91 is connected to the first region of the ninth active layer in each circuit unit through the ninth via V9, thereby realizing that the first reference signal line 91 is connected to the first electrode of the ninth transistor T9, and the first reference signal line 91 can write the first reference signal into the first electrode of the ninth transistor T9.

[0219] In an exemplary embodiment, since the first active connection line 10 of the semiconductor layer is directly connected to the first area of ​​the ninth active layer of multiple circuit units in a unit row, and the first reference signal line 91 of the third conductive layer is connected to the first area of ​​the ninth active layer of multiple circuit units in a unit row through a via, the first active connection line 10 and the first reference signal line 91 constitute a signal line with a double-layer structure, which not only ensures that the first areas of multiple ninth active layers in a unit row have the same potential, but also reduces the resistance of the signal line and the voltage drop of the first reference signal, which is beneficial to improving the uniformity of the panel, avoiding poor display of the display substrate, and ensuring the display effect of the display substrate.

[0220] In an exemplary embodiment, a first reference connection block 91-1 is provided on a side of the first reference signal line 91 away from the second scanning signal line 62, a first end of the first reference connection block 91-1 is connected to the first reference signal line 91, and a second end of the first reference connection block 91-1 extends in a direction away from the second scanning signal line 62, and the first reference connection block 91-1 is configured to be connected to a reference signal connection line formed subsequently.

[0221] In the exemplary embodiment, the first power connection line 68 is connected to the fourth electrode plate 74 in each circuit unit through the thirteenth via V13, thereby achieving the connection between the first power connection line 68 and the fourth electrode plate 74. Since the first power connection line 68 is connected to the first power line formed later, the first power connection line 68 can write the first power signal to the upper electrode plate of the second storage capacitor.

[0222] In the exemplary embodiment, a first power connection block 68-1 is provided on a side of the first power connection line 68 near the fourth electrode plate 74. A first end of the first power connection block 68-1 is connected to the first power connection line 68, and a second end of the first power connection block 68-1 extends toward the fourth electrode plate 74. In the exemplary embodiment, the first power connection block 68-1 is configured to be connected to the fourth electrode plate 74 through the thirteenth via V13 and to be connected to a first power line to be formed later.

[0223] In an exemplary embodiment, the first connection electrode 41 may be in the shape of a strip having a main portion extending along the second direction Y, and may be disposed on a side of the first power connection line 68 close to the fourth scan signal line 64. A first end of the first connection electrode 41 is connected to the second region of the first active layer (also the first region of the second active layer) through a second via hole V2, and a second end of the first connection electrode 41 is connected to the first electrode plate 71 through a tenth via hole V10.

[0224] In an exemplary embodiment, the first connection electrode 41 enables the second electrode of the first transistor T1, the first electrode of the second transistor T2 and the first plate 71 of the first storage capacitor to have the same potential. The first connection electrode 41 can serve as the first node N1 in the pixel driving circuit.

[0225] In an exemplary embodiment, the second connection electrode 42 may be in the shape of a strip having a main portion extending along the second direction Y, and may be disposed on a side of the first reference signal line 91 close to the first power connection line 68. A first end of the second connection electrode 42 is connected to the third electrode plate 73 via a twelfth via hole V12, a second end of the second connection electrode 42 is connected to the second region of the fourth active layer (also the second region of the ninth active layer) via a fourth via hole V4, and a midpoint between the first and second ends of the second connection electrode 42 is connected to the second electrode plate 72 via an eleventh via hole V11.

[0226] In an exemplary embodiment, the second connection electrode 42 causes the second electrode of the fourth transistor T4, the second electrode of the ninth transistor T9, the third plate 73 of the first storage capacitor, and the second plate 72 of the second storage capacitor to have the same potential, and the second connection electrode 42 can serve as the fifth node N5 in the pixel driving circuit.

[0227] In an exemplary embodiment, the third connection electrode 43 may be in a block shape and may be located between the first reference signal line 91 and the first power connection line 68. The third connection electrode 43 may be connected to the first region of the fourth active layer through a third via V3. In an exemplary embodiment, the third connection electrode 43 may serve as a first electrode of the fourth transistor T4 and may be configured to be connected to a subsequently formed data signal line.

[0228] In an exemplary embodiment, the fourth connection electrode 44 may be in a block shape and may be located between the fifth scan signal line 65 and the second initial signal line 82. The fourth connection electrode 44 is connected to the first region of the fifth active layer through a fifth via hole V5. In an exemplary embodiment, the fourth connection electrode 44 may serve as a first electrode of the fifth transistor T5 and may be configured to be connected to a first power supply line formed subsequently.

[0229] In an exemplary embodiment, the fifth connection electrode 45 may be in an "L" shape and may be located between the fifth scan signal line 65 and the second initial signal line 82. The fifth connection electrode 45 is connected to the second region of the sixth active layer (also the second region of the seventh active layer) through a sixth via hole V6. In an exemplary embodiment, the fifth connection electrode 45 may serve as the second electrode of the sixth transistor T6 and the second electrode of the seventh transistor T7 and is configured to be connected to an anode connection electrode formed subsequently.

[0230] In an exemplary embodiment, the sixth connection electrode 46 may be in the shape of a strip with a main portion extending along the first direction X. The sixth connection electrode 46 may be located between the fifth scan signal line 65 and the second initial signal line 82. A first end of the sixth connection electrode 46 is connected to the first region of the eighth active layer via an eighth via hole V8, and a second end of the sixth connection electrode 46 is connected to the second reference connection block 92-1 via a twenty-second via hole V22. In an exemplary embodiment, the sixth connection electrode 46 may serve as the first electrode of the eighth transistor T8. Since the second reference connection block 92-1 is connected to the second reference signal line 92, the second reference signal line 92 is connected to the first electrode of the eighth transistor T8. The second reference signal line 92 in the nth cell row may write the second reference signal into the first electrode of the eighth transistor T8 in the (n-1)th cell row.

[0231] In an exemplary embodiment, the seventh connection electrode 47 may be in the shape of a bar with a main portion extending along the first direction X. The seventh connection electrode 47 may be located between the fifth scan signal line 65 and the second initial signal line 82. A first end of the seventh connection electrode 47 is connected to the fifth gate electrode 25 via a seventeenth via hole V17, and a second end of the seventh connection electrode 47 is connected to the first light-emitting connection block 31-1 via a twentieth via hole V20. Since the first light-emitting connection block 31-1 is connected to the first light-emitting signal line 31, the first light-emitting signal line 31 is connected to the fifth gate electrode 25 of the fifth transistor T5. The first light-emitting signal line 31 can control the conduction and disconnection of the fifth transistor T5.

[0232] In an exemplary embodiment, the eighth connection electrode 48 may be in the shape of a bar with a main portion extending along the first direction X. The eighth connection electrode 48 may be located between the fifth scan signal line 65 and the second initial signal line 82. A first end of the eighth connection electrode 48 is connected to the sixth gate electrode 26 via an eighteenth via hole V18, and a second end of the eighth connection electrode 48 is connected to the second light-emitting connection block 32-1 via a twenty-first via hole V21. Since the second light-emitting connection block 32-1 is connected to the second light-emitting signal line 32, the second light-emitting signal line 32 is connected to the sixth gate electrode 26 of the sixth transistor T6. The second light-emitting signal line 32 can control the conduction and disconnection of the sixth transistor T6.

[0233] In an exemplary embodiment, the ninth connection electrode 49 may be in the shape of a strip with a main portion extending along the first direction X. The ninth connection electrode 49 may be located between the fifth scan signal line 65 and the second initial signal line 82. A first end of the ninth connection electrode 49 is connected to the first region of the first active layer via a first via hole V1, and a second end of the ninth connection electrode 49 is connected to the first initial connection block 81-1 via a twenty-third via hole V23. Since the first initial connection block 81-1 is connected to the first initial signal line 81, the first initial signal line 81 is connected to the first electrode of the first transistor T1. The first initial signal line 816 can write the first initial signal to the first electrode of the first transistor T1.

[0234] In the exemplary embodiment, the first plate 71 is connected to the second region of the first active layer (also the first region of the second active layer) via the first connection electrode 41, and thus has a potential of the first node N1. The third plate 73 is connected to the second region of the fourth active layer (also the second region of the ninth active layer) via the second connection electrode 42, and thus has a potential of the fifth node N5. Thus, the first plate 71 having a potential of the first node N1 and the third plate 73 having a potential of the fifth node N5 constitute a first storage capacitor of the pixel driving circuit.

[0235] In this exemplary embodiment, the second plate 72 is connected to the second region of the fourth active layer (also the second region of the ninth active layer) via the second connection electrode 42, and thus has the potential of the fifth node N5. Since the fourth plate 74 is connected to the first power connection line 68, and the first power connection line 68 is connected to a first power line to be formed later, the fourth plate 74 has the potential of the first power line. Thus, the second plate 72 having the potential of the fifth node N5 and the fourth plate 74 having the potential of the first power line constitute a second storage capacitor of the pixel driving circuit.

[0236] (16) Forming a fifth insulating layer pattern. In an exemplary embodiment, forming the fifth insulating layer pattern may include: depositing a fifth insulating film on the substrate having the aforementioned pattern formed thereon, patterning the fifth insulating film using a patterning process to form a fifth insulating layer covering the third conductive layer, wherein a plurality of vias are provided in each circuit unit, as shown in FIG. 12 .

[0237] In an exemplary embodiment, the plurality of via holes of each circuit unit in the display substrate includes at least a thirty-first via hole V31 , a thirty-second via hole V32 , a thirty-third via hole V33 , a thirty-fourth via hole V34 , and a thirty-fifth via hole V35 .

[0238] In an exemplary embodiment, the orthographic projection of the thirty-first via hole V31 on the substrate is located within the range of the orthographic projection of the third connecting electrode 43 on the substrate, the fifth insulating layer in the thirty-first via hole V31 is removed, exposing the surface of the third connecting electrode 43, and the thirty-first via hole V31 is configured to connect a subsequently formed data signal line to the third connecting electrode 43 through the via hole.

[0239] In an exemplary embodiment, the orthographic projection of the thirty-second via V32 on the substrate is located within the range of the orthographic projection of the fourth connecting electrode 44 on the substrate, the fifth insulating layer in the thirty-second via V32 is removed, exposing the surface of the fourth connecting electrode 44, and the thirty-second via V32 is configured to connect the subsequently formed first power line to the fourth connecting electrode 44 through the via.

[0240] In an exemplary embodiment, the orthographic projection of the thirty-third via V33 on the substrate is located within the range of the orthographic projection of the fifth connecting electrode 45 on the substrate, the fifth insulating layer in the thirty-third via V33 is removed, exposing the surface of the fifth connecting electrode 45, and the thirty-third via V33 is configured to connect the subsequently formed anode connecting electrode to the fifth connecting electrode 45 through the via.

[0241] In an exemplary embodiment, the orthographic projection of the thirty-fourth via V34 on the substrate is located within the range of the orthographic projection of the first reference connection block 91-1 of the first reference signal line 91 on the substrate, the fifth insulating layer in the thirty-fourth via V34 is removed, exposing the surface of the first reference connection block 91-1, and the thirty-fourth via V34 is configured to connect the subsequently formed reference signal connection line to the first reference connection block 91-1 through the via.

[0242] In an exemplary embodiment, the orthographic projection of the thirty-fifth via V35 on the substrate is located within the range of the orthographic projection of the first power connection block 68-1 of the first power connection line 68 on the substrate, the fifth insulating layer in the thirty-fifth via V35 is removed, exposing the surface of the first power connection block 68-1, and the thirty-fifth via V35 is configured to connect the subsequently formed first power line to the first power connection block 68-1 through the via.

[0243] (17) Forming a fourth conductive layer pattern. In an exemplary embodiment, forming the fourth conductive layer pattern may include: depositing a fourth conductive film on the substrate having the aforementioned pattern formed thereon, and patterning the fourth conductive film using a patterning process to form a fourth conductive layer disposed on the fifth insulating layer, as shown in Figures 13A and 13B, where Figure 13B is a schematic diagram of the fourth conductive layer in Figure 13A. In an exemplary embodiment, the fourth conductive layer may be referred to as a second source / drain metal (SD2) layer.

[0244] In an exemplary embodiment, each of the fourth conductive layer patterns of the plurality of circuit units in the display substrate may include a first power supply line 51 , a data signal line 53 , a reference signal connection line 54 , and an anode connection electrode 55 .

[0245] In an exemplary embodiment, the shapes of the first power line 51, the data signal line 53 and the reference signal connection line 54 can be straight lines or broken lines with the main parts extending along the second direction Y. The first power line 51 can be located on one side of the data signal line 53 in the first direction X, and the reference signal connection line 54 can be located on one side of the first power line 51 in the first direction X, that is, the first power line 51 can be located between the data signal line 53 and the reference signal connection line 54.

[0246] In an exemplary embodiment, the first power line 51 may be shaped like a zigzag line, with a main portion extending along the second direction Y. A power shielding electrode 51-1 is disposed on a side of the first power line 51 near the reference signal connection line 54. A first end of the power shielding electrode 51-1 is connected to the first power line 51, and a second end of the power shielding electrode 51-1 extends toward the reference signal connection line 54. The power shielding electrode 51-1 may be rectangular, with the orthographic projection of the power shielding electrode 51-1 on the substrate at least partially overlapping with the orthographic projection of the first connection electrode 41 on the substrate. Because the first connection electrode 41 serves as the first node N1 in the pixel driving circuit, the constant voltage power shielding electrode 51-1 can effectively shield the first node N1 from the effects of other signals in the pixel driving circuit, preventing other signals (such as data voltage jumps) from affecting the potential of the first node N1 of the pixel driving circuit, thereby improving display quality.

[0247] In an exemplary embodiment, the first power line 51 and the power shielding electrode 51 - 1 may be an integral structure connected to each other.

[0248] In an exemplary embodiment, the orthographic projection of the power shielding electrode 51 - 1 on the substrate may include the orthographic projection of the first connection electrode 41 on the substrate.

[0249] In an exemplary embodiment, a first connection electrode block 51-2 is provided on a side of the first power line 51 near the data signal line 53. A first end of the first connection electrode block 51-2 is connected to the first power line 51, and a second end of the first connection electrode block 51-2 extends toward the data signal line 53. The first connection electrode block 51-2 can be connected to the fourth connection electrode 44 via a thirty-second via hole V32. Because the fourth connection electrode 44 is connected to the first region of the fifth active layer through the via hole, the first power line 51 is able to write the first power signal to the first electrode of the fifth transistor T5.

[0250] In the exemplary embodiment, a second connection electrode block 51-3 is disposed on a side of the first power line 51 near the reference signal connection line 54. A first end of the second connection electrode block 51-3 is connected to the first power line 51, and a second end of the second connection electrode block 51-3 extends toward the reference signal connection line 54. The second connection electrode block 51-3 can be connected to the first power connection block 68-1 via a thirty-fifth via hole V35. Since the first power connection block 68-1 is connected to the first power connection line 68, the first power connection line 68, whose main portion extends along the first direction X, is interconnected with the first power line 51, whose main portion extends along the second direction Y. This allows the first power lines 51 and 68 to form a mesh structure on the display substrate for transmitting power signals. This not only effectively reduces the resistance of the first power line 51 and the voltage drop of the first power signal, but also effectively improves the uniformity of the first power signal across the display substrate, effectively enhancing display uniformity and improving display quality.

[0251] In an exemplary embodiment, the orthographic projection of the first power line 51 on the substrate at least partially overlaps with the orthographic projection of the second connection electrode 42 on the substrate. Because the second connection electrode 42 serves as the fifth node N5 in the pixel driving circuit, the constant voltage first power line 51 can effectively shield the fifth node N5 from the influence of other signals in the pixel driving circuit, preventing other signals from affecting the potential of the fifth node N5 of the pixel driving circuit, thereby improving the display effect.

[0252] In an exemplary embodiment, the first power lines 51 may be designed with unequal widths. The unequal width design of the first power lines 51 not only facilitates the layout of the pixel structure but also reduces the parasitic capacitance between the first power lines and the data signal lines.

[0253] In an exemplary embodiment, the data signal line 53 may be shaped as a straight line with a main portion extending along the second direction Y. A data signal connection block 53-1 is provided on the data signal line 53. A first end of the data signal connection block 53-1 is connected to the data signal line 53, and a second end of the data signal connection block 53-1 extends toward the first end in the first direction X and in a direction opposite to the first direction X. The data signal connection block 53-1 is connected to the third connection electrode 43 via a thirty-first via hole V31. Because the third connection electrode 43 is connected to the first region of the fourth active layer via the via hole, the data signal line 53 writes the data signal to the first electrode of the fourth transistor T4.

[0254] In an exemplary embodiment, the reference signal connection line 54 may be shaped as a straight line with a main portion extending along the second direction Y. A reference signal connection block 54-1 is provided on the reference signal connection line 54. A first end of the reference signal connection block 54-1 is connected to the reference signal connection line 54, and a second end of the reference signal connection block 54-1 extends toward the first power line 51. The reference signal connection block 54-1 may be connected to a first reference connection block 91-1 via a thirty-fourth via V34. The connection between the first reference connection block 91-1 and the first reference signal line 91 establishes a connection between the first reference signal line 91, whose main portion extends along the first direction X, and the reference signal connection line 54, whose main portion extends along the second direction Y. This allows the first reference signal line 91 and the reference signal connection line 54 to form a mesh structure on the display substrate that transmits the first reference signal. This effectively reduces the resistance of the first reference signal line and the voltage drop of the first reference signal, while also improving the uniformity of the first reference signal across the display substrate, thereby enhancing display uniformity and improving display quality.

[0255] In an exemplary embodiment, the anode connection electrode 55 may be rectangular in shape and is connected to the fifth connection electrode 45 via a thirty-third via hole V33. Since the fifth connection electrode 45 is connected to the second region of the sixth active layer (also the second region of the seventh active layer) via the via hole, the anode connection electrode 55 is connected to the second electrode of the sixth transistor T6 and the second electrode of the seventh transistor T7. In an exemplary embodiment, the anode connection electrode 55 is configured to be connected to a subsequently formed anode, thereby enabling the pixel driving circuit to drive the light-emitting device.

[0256] In an exemplary embodiment, an orthographic projection of the anode connecting electrode 55 on the substrate at least partially overlaps with an orthographic projection of the anode repair line 33 on the substrate.

[0257] In an exemplary embodiment, the first power connection line 68 of the third conductive layer can be set in each unit row, and the first power line 51 of the fourth conductive layer can be set in each unit column. Multiple first power lines 51 are respectively connected to multiple first power connection lines 68 to form a mesh structure for transmitting power signals.

[0258] In an exemplary embodiment, the first reference signal line 91 of the third conductive layer can be set in each unit row, and the reference signal connection line 54 of the fourth conductive layer can be set in each unit column. Multiple first reference signal lines 91 are respectively connected to multiple reference signal connection lines 54 to form a mesh structure for transmitting the first reference signal.

[0259] The subsequent preparation process may include forming a first flat layer pattern, a plurality of anode vias are provided on the first flat layer, the orthographic projection of the anode vias on the substrate is located within the range of the orthographic projection of the anode connecting electrode on the substrate, the first flat layer in the anode via is removed to expose the surface of the anode connecting electrode, and the anode via is configured to connect the subsequently formed anode to the anode connecting electrode through the via.

[0260] At this point, the driving circuit layer of this embodiment is prepared on the substrate. In an exemplary embodiment, after the driving circuit layer is prepared, a light emitting structure layer and an encapsulation structure layer can be sequentially prepared on the driving circuit layer, which will not be described in detail here.

[0261] In the embodiment of the present disclosure, by providing a first shielding electrode, a second shielding electrode, a third shielding electrode, and a fourth shielding electrode, the influence of the data voltage jump on the first transistor T1, the second transistor T2, the fourth transistor T4, the ninth transistor T9, and the fifth node N5 can be shielded, thereby preventing the data voltage jump from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0262] The embodiment of the present disclosure provides a power shielding electrode, which can effectively shield the influence of other signals in the pixel driving circuit on the first node N1, thereby preventing other signals from affecting the potential of the first node N1 of the pixel driving circuit and improving the display effect.

[0263] In the embodiment of the present disclosure, a first power connection line 68 extending along the first direction X of the main body is connected to a first power line 51 extending along the second direction Y of the main body, thereby forming a high-voltage power grid structure with a mesh-like interconnected structure on the display substrate.

[0264] The preparation process disclosed in the present invention is well compatible with existing preparation processes, is simple to implement, easy to implement, has high production efficiency, low production cost, and high yield rate.

[0265] In an exemplary embodiment, the display substrate of the present disclosure can be applied to a display device having a pixel driving circuit, such as OLED, quantum dot display (QLED), light-emitting diode display (Micro LED or Mini LED) or quantum dot light-emitting diode display (QDLED), etc., which is not limited in the present disclosure.

[0266] Figure 14 is a schematic planar structural diagram of another display substrate according to an exemplary embodiment of the present disclosure, illustrating the structure of a pixel driver circuit in one circuit unit within the display substrate. As shown in Figure 14, the structure of the pixel driver circuit in this exemplary embodiment is substantially the same as that of the aforementioned embodiment, with the difference that in this embodiment, first shielding electrode 36 and second shielding electrode 37 are disposed in the third conductive layer, and both first shielding electrode 36 and second shielding electrode 37 are connected to first power connection line 68. The orthographic projection of first shielding electrode 36 on the substrate at least partially overlaps the orthographic projection of the node between the two gate electrodes of first transistor T1 on the substrate; and the orthographic projection of second shielding electrode 37 on the substrate at least partially overlaps the orthographic projection of the node between the two gate electrodes of second transistor T2 on the substrate.

[0267] Figure 15a is a schematic diagram of the second conductive layer in Figure 14, and Figure 15b is a schematic diagram of the third conductive layer in Figure 14. In the exemplary embodiment, as shown in Figures 14 and 15a, the first shielding electrode 36 and the second shielding electrode 37 are not provided on the side of the fourth electrode plate 74 close to the first light-emitting signal line 31. The edge of the fourth electrode plate 74 close to the first light-emitting signal line 31 is linear and is located on the side of the third electrode plate 73 away from the first light-emitting signal line 31.

[0268] In an exemplary embodiment, as shown in Figures 14 and 15b , the first power connection line 68 may be shaped like a zigzag line with a main portion extending along the first direction X. The first power connection line 68 may be located on one side of the fourth electrode plate 74 in the second direction Y, with the orthographic projection of the first power connection line 68 on the substrate at least partially overlapping with the orthographic projection of the third electrode plate 73 on the substrate. A first shielding electrode 36 is provided on the side of the first power connection line 68 near the fourth scan signal line 64. The first shielding electrode 36 may be shaped like a line with a main portion extending along the second direction Y. A first end of the first shielding electrode 36 is connected to the first power connection line 68, and a second end of the first shielding electrode 36 extends toward the fourth scan signal line 64. The orthographic projection of the first shielding electrode 36 on the substrate at least partially overlaps with the orthographic projection of the first active layer between the two gate electrodes of the first transistor T1 on the substrate. In an exemplary embodiment, the first shielding electrode 36 is configured to shield the first transistor T1 from the effects of data voltage jumps, preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving display quality.

[0269] In an exemplary embodiment, the first power connection line 68 and the first shielding electrode 36 may be an integral structure connected to each other.

[0270] In an exemplary embodiment, as shown in Figures 14 and 15b, a second shielding electrode 37 is provided on a side of the first power connection line 68 near the fourth scan signal line 64. The second shielding electrode 37 may be in the shape of a line with a main portion extending along the second direction Y. A first end of the second shielding electrode 37 is connected to the first power connection line 68, and a second end of the second shielding electrode 37 extends toward the fourth scan signal line 64. The orthographic projection of the second shielding electrode 37 on the substrate at least partially overlaps with the orthographic projection of the first active layer between the two gate electrodes of the second transistor T2 on the substrate. In an exemplary embodiment, the second shielding electrode 37 is configured to shield the second transistor T2 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0271] In an exemplary embodiment, the first power connection line 68 and the second shielding electrode 37 may be an integral structure connected to each other.

[0272] In an exemplary embodiment, at least one circuit unit further includes a shielding connection line 69, which may be located in the third conductive layer. The shielding connection line 69 may be in the shape of a line with a main portion extending along the first direction X. The shielding connection line 69 may be located between the first power connection line 68 and the fourth scan signal line 64. The shielding connection line 69 is connected to the second end of the first shielding electrode 36, and the shielding connection line 69 is connected to the first power connection line 68 via the first shielding electrode 36.

[0273] In an exemplary embodiment, the shielding connection line 69 and the first shielding electrode 36 may be an integral structure connected to each other.

[0274] In an exemplary embodiment, the shielding connection line 69 of the exemplary embodiment may be connected to the second end of the second shielding electrode 37 , and the shielding connection line 69 is connected to the first power connection line 68 through the second shielding electrode 37 .

[0275] In an exemplary embodiment, the shielding connection line 69 and the second shielding electrode 37 may be an integral structure connected to each other.

[0276] In the embodiment of the present disclosure, the shielded connecting wire is connected to the first power connecting wire, and the first power connecting wire is connected to the first power connecting wire, so that the first power connecting wire, the first power connecting wire and the shielding connecting wire respectively form a mesh structure for transmitting the power signal on the display substrate. This can not only effectively reduce the resistance of the first power line and reduce the voltage drop of the first power signal, but also effectively improve the uniformity of the first power signal in the display substrate, effectively improve the display uniformity, and improve the display quality and display quality.

[0277] Figure 16 is a schematic plan view of another exemplary embodiment of a display substrate, illustrating the structure of a pixel driver circuit within a circuit unit within the display substrate. As shown in Figure 16, the structure of the pixel driver circuit in this exemplary embodiment is substantially the same as that in the embodiment shown in Figure 14, with the difference that in this exemplary embodiment, a first power connection line 68 is disposed on one side of the first connection electrode 41 in the second direction Y, and at least one circuit unit further includes a second power connection block 68-2.

[0278] Figure 17 is a schematic diagram of the third conductive layer in Figure 16 . In an exemplary embodiment, as shown in Figures 16 and 17 , at least one circuit unit further includes a second power connection block 68-2, which can be block-shaped. The second power connection block 68-2 is located on one side of the third scan signal line 63 in the second direction Y, on the side of the first connection electrode 41 opposite to the second direction Y, and on the side of the second connection electrode 42 in the first direction X. The second power connection block 68-2 is configured to be connected to the fourth electrode plate 74 via the thirteenth via V13 and to the first power line via the thirty-fifth via V35.

[0279] In an exemplary embodiment, the first power connection line 68 in this exemplary embodiment may be in the shape of a line having a main portion extending along the first direction X. The first power connection line 68 may be located on a side of the fourth scan signal line 64 opposite to the second direction Y and on a side of the first connection electrode 41 in the second direction Y, that is, the first power connection line 68 may be located between the fourth scan signal line 64 and the first connection electrode 41. The first power connection line 68 may be connected to the first power line 51 through the thirty-sixth via V36, thereby achieving mutual connection between the first power connection line 68 having a main portion extending along the first direction X and the first power line 51 having a main portion extending along the second direction Y.

[0280] In an exemplary embodiment, the first shielding electrode 36 may have a block-shaped main portion. The first shielding electrode 36 is connected to the first power supply connection line 68. The orthographic projection of the first shielding electrode 36 on the substrate at least partially overlaps with the orthographic projection of the first active layer between the two gate electrodes of the first transistor T1 on the substrate. In an exemplary embodiment, the first shielding electrode 36 is configured to shield the first transistor T1 from the effects of data voltage jumps, thereby preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0281] In an exemplary embodiment, the first power connection line 68 and the first shielding electrode 36 may be an integral structure connected to each other.

[0282] In an exemplary embodiment, the second shielding electrode 37 may have a block-shaped main portion. The second shielding electrode 37 is connected to the first power connection line 68. The orthographic projection of the second shielding electrode 37 on the substrate at least partially overlaps with the orthographic projection of the first active layer between the two gate electrodes of the second transistor T2 on the substrate. In an exemplary embodiment, the second shielding electrode 37 is configured to shield the second transistor T2 from the effects of data voltage jumps, preventing the data voltage jumps from affecting the normal operation of the pixel driving circuit and improving the display effect.

[0283] In an exemplary embodiment, the first power connection line 68 and the second shielding electrode 37 may be an integral structure connected to each other.

[0284] As shown in Figures 16 and 17, the orthographic projection of the thirty-fifth via hole V35 among the multiple via holes of the circuit unit in the display substrate is located within the range of the orthographic projection of the second power connection block 68-2 on the substrate, and the fifth insulating layer in the thirty-fifth via hole V35 is removed to expose the surface of the second power connection block 68-2. The thirty-fifth via hole V35 is configured to connect the first power line 51 to the second power connection block 68-2 through the via hole.

[0285] In an exemplary embodiment, the multiple vias of the circuit unit in the display substrate also include: a thirty-sixth via V36, the orthographic projection of the thirty-sixth via V36 on the substrate is located within the range of the orthographic projection of the first power connection line 68 on the substrate, the fifth insulating layer in the thirty-sixth via V36 is removed, exposing the surface of the first power connection line 68, and the thirty-sixth via V36 is configured to connect the first power line 51 to the first power connection line 68 through the via.

[0286] In an exemplary embodiment, the first power line 51 of the circuit unit in the display substrate may be shaped like a zigzag line, with a main portion extending along the second direction Y. A third connection electrode block 51-4 is disposed on a side of the first power line 51 near the data signal line 53. A first end of the third connection electrode block 51-4 is connected to the first power line 51, and a second end of the third connection electrode block 51-4 extends toward the data signal line 53. The third connection electrode block 51-4 may be connected to the first power connection line 68 via a thirty-sixth via hole V36. The connection between the third connection electrode block 51-4 and the first power connection line 68 establishes a connection between the first power connection line 68, whose main portion extends along the first direction X, and the first power line 51, whose main portion extends along the second direction Y. This allows the first power lines 51 and 68 to form a mesh structure on the display substrate for transmitting power signals. This effectively reduces the resistance of the first power line 51 and the voltage drop of the first power signal, while also improving the uniformity of the first power signal across the display substrate, thereby enhancing display uniformity and improving display quality.

[0287] In some embodiments, the first power connection line of this exemplary embodiment may also be connected to other constant voltage lines other than the first power line through vias, such as the second power line (VSS), a reference signal connection line, or an initial signal line.

[0288] Figure 18 is an enlarged view of the first and second storage capacitor regions in another exemplary embodiment of the present disclosure. As shown in Figure 18, the structure of the pixel driving circuit of this exemplary embodiment is substantially the same as that of the embodiment shown in Figure 5, except that the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the display substrate of this exemplary embodiment is larger than the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the display substrate of the embodiment shown in Figure 5. The area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the display substrate of this exemplary embodiment is also larger than the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the display substrate of the embodiment shown in Figure 5.

[0289] In an exemplary embodiment, the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 on the substrate is more than 3 times, for example, 5 times, 7 times, 10 times, 15 times, 20 times, etc., the area of ​​the orthographic projection of the fourth active layer of the fourth transistor T4 on the substrate.

[0290] In an exemplary embodiment, the area of ​​the positive projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 on the substrate is more than 3 times the area of ​​the positive projection of the ninth active layer of the ninth transistor T9 on the substrate, for example, 5 times, 7 times, 10 times, 15 times, 20 times, etc.

[0291] In an exemplary embodiment, the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate in the first direction X shown in this exemplary embodiment is greater than the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate in the first direction X shown in the embodiment shown in Figure 5; the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate in the second direction Y shown in this exemplary embodiment is greater than the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate in the second direction Y shown in the embodiment shown in Figure 5.

[0292] In an exemplary embodiment, the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate in the first direction X shown in this exemplary embodiment is greater than the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate in the first direction X shown in the embodiment shown in Figure 5; the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate in the second direction Y shown in this exemplary embodiment is greater than the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate in the second direction Y shown in the embodiment shown in Figure 5.

[0293] This exemplary embodiment shows that the substrate reduces leakage current of the fourth transistor T4 and the ninth transistor T9 by increasing the orthographic projection area of ​​the semiconductor layer between the two gate electrodes of the fourth transistor T4 and the ninth transistor T9 on the substrate.

[0294] FIG19 is an enlarged view of the first and second storage capacitor regions in another exemplary embodiment of the present disclosure. As shown in FIG19 , the structure of the pixel driving circuit of this exemplary embodiment is substantially the same as that of the embodiment shown in FIG18 , except that the semiconductor layer in the display substrate of this exemplary embodiment does not include a first active connection line, and the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the display substrate of this exemplary embodiment is larger than the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the display substrate of the embodiment shown in FIG18 . The area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the display substrate of this exemplary embodiment is larger than the area of ​​the orthographic projection of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the display substrate of the embodiment shown in FIG18 .

[0295] In this exemplary embodiment, since the first active connecting line is not provided, the semiconductor layer between the two gate electrodes of the fourth transistor T4 and the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate of this exemplary embodiment can extend along the second direction Y, thereby increasing the area of ​​the orthographic projection of the semiconductor layer on the substrate. In this exemplary embodiment, the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate of this exemplary embodiment in the second direction Y is greater than the length of the semiconductor layer between the two gate electrodes of the fourth transistor T4 in the substrate of the embodiment shown in FIG. 18 . In this exemplary embodiment, the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate of this exemplary embodiment in the second direction Y is greater than the length of the semiconductor layer between the two gate electrodes of the ninth transistor T9 in the substrate of the embodiment shown in FIG. 18 .

[0296] This exemplary embodiment shows that the substrate reduces leakage current of the fourth transistor T4 and the ninth transistor T9 by increasing the orthographic projection area of ​​the semiconductor layer between the two gate electrodes of the fourth transistor T4 and the ninth transistor T9 on the substrate.

[0297] FIG20 is an enlarged view of the first storage capacitor and the second storage capacitor regions in another exemplary embodiment of the present disclosure. As shown in FIG20 , the structure of the pixel driving circuit of this exemplary embodiment is substantially the same as that of the embodiment shown in FIG14 , except that the second conductive layer pattern in the display substrate of this exemplary embodiment further includes a fifth shielding electrode 74-1. The fifth shielding electrode 74-1 is connected to the fourth electrode plate 74, and the orthographic projection of the fifth shielding electrode 74-1 on the substrate at least partially overlaps with the orthographic projection of the data signal line 53 on the substrate. The fifth shielding electrode 74-1 is configured to shield the signal of the data signal line 53 and ensure uniform loading of the data signal line 53.

[0298] In an exemplary embodiment, the first shielding electrode 36 and the second shielding electrode 37 are disposed in the third conductive layer, and both the first shielding electrode 36 and the second shielding electrode 37 are connected to the first power connection line 68. The orthographic projection of the first shielding electrode 36 on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the first transistor T1 on the substrate; the orthographic projection of the second shielding electrode 37 on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the second transistor T2 on the substrate.

[0299] In an exemplary embodiment, the fifth shielding electrode 74 - 1 is located on one side of the fourth electrode plate 74 in the second direction Y. The fifth shielding electrode 74 - 1 may be in the shape of a bar extending along the second direction Y. A first end of the fifth shielding electrode 74 - 1 is connected to the fourth electrode plate 74 , and a second end of the fifth shielding electrode 74 - 1 extends along the second direction Y.

[0300] In an exemplary embodiment, the fourth electrode plate 74 and the fifth shielding electrode 74 - 1 may be an integral structure connected to each other.

[0301] In some embodiments, an orthographic projection of the fifth shielding electrode on the substrate may not overlap with an orthographic projection of the data signal line on the substrate.

[0302] FIG21 is a schematic diagram of a third conductive layer in another exemplary embodiment of the present disclosure. As shown in FIG21 , the structure of the pixel driving circuit in this exemplary embodiment is substantially the same as that in the embodiment shown in FIG16 , except that the third conductive layer in the display substrate in this exemplary embodiment further includes a sixth shielding electrode 68-3. The sixth shielding electrode 68-3 is connected to the first power supply connection line 68, and the orthographic projection of the sixth shielding electrode 68-3 on the substrate at least partially overlaps with the orthographic projection of the data signal line 53 on the substrate. The sixth shielding electrode 68-3 is configured to shield the signal of the data signal line 53 and ensure uniform loading of the data signal line 53.

[0303] In an exemplary embodiment, the sixth shielding electrode 68-3 is located on a side of the first power connection line 68 opposite to the second direction Y. The sixth shielding electrode 68-3 may be in the shape of a bar extending in the direction opposite to the second direction Y. A first end of the sixth shielding electrode 68-3 is connected to the first power connection line 68, and a second end of the fifth shielding electrode 74-1 extends in the direction opposite to the second direction Y.

[0304] In an exemplary embodiment, the first power connection line 68 and the sixth shielding electrode 68 - 3 may be an integral structure connected to each other.

[0305] In an exemplary embodiment, the orthographic projection of the sixth shielding electrode on the substrate is located within the orthographic projection of the data signal line on the substrate, thereby preventing the sixth shielding electrode from affecting the light transmittance of the display substrate.

[0306] In an exemplary embodiment, the length of the sixth shielding electrode in the first direction X is greater than the length of the data signal line 53 in the first direction X, ensuring the flatness of the subsequently formed data signal line 53 .

[0307] The present disclosure also provides a method for preparing a display substrate, so as to prepare the display substrate provided in the above embodiment.

[0308] In an exemplary embodiment, a method of preparing a display substrate may include:

[0309] A driving circuit layer is formed on a substrate, wherein the driving circuit layer includes at least a plurality of circuit units, at least one circuit unit includes a pixel driving circuit, and the pixel driving circuit includes a first storage capacitor, a second storage capacitor, at least one shielding electrode and at least one dual-gate structure transistor, wherein the first storage capacitor includes at least a first plate and a third plate, and the orthographic projection of the first plate on the substrate at least partially overlaps with the orthographic projection of the third plate on the substrate; the second storage capacitor includes at least a second plate and a fourth plate, and the orthographic projection of the second plate on the substrate at least partially overlaps with the orthographic projection of the fourth plate on the substrate; the second plate is connected to the third plate, and the fourth plate is connected to a first power line; the orthographic projection of the shielding electrode on the substrate at least partially overlaps with the orthographic projection of a node between two gate electrodes of the dual-gate structure transistor on the substrate.

[0310] The present disclosure further provides a display device including the aforementioned display substrate. The display device can be any product or component with a display function, such as a mobile phone, tablet computer, television, monitor, laptop computer, digital photo frame, or navigation system, but the embodiments of the present invention are not limited thereto.

[0311] Although the embodiments disclosed in this disclosure are as described above, the contents described are merely embodiments adopted to facilitate understanding of the disclosure and are not intended to limit the present invention. Any person skilled in the art may make any modifications and changes in the form and details of the implementation without departing from the spirit and scope of the disclosure. However, the scope of patent protection of the present invention shall still be based on the scope defined by the appended claims.

Claims

1. A display substrate, comprising a driving circuit layer disposed on a substrate, the driving circuit layer comprising at least a plurality of circuit units, at least one circuit unit comprising a pixel driving circuit, the pixel driving circuit comprising a first storage capacitor, a second storage capacitor, at least one shielding electrode and at least one transistor with a dual-gate structure, the first storage capacitor comprising at least a first electrode plate and a third electrode plate, the orthographic projection of the first electrode plate on the substrate at least partially overlaps with the orthographic projection of the third electrode plate on the substrate; The second storage capacitor comprises at least a second electrode plate and a fourth electrode plate, and the orthographic projection of the second electrode plate on the substrate at least partially overlaps with the orthographic projection of the fourth electrode plate on the substrate; The second electrode plate is connected to the third electrode plate, and the fourth electrode plate is connected to the first power line; An orthographic projection of the shielding electrode on the substrate at least partially overlaps with an orthographic projection of a node between two gate electrodes of the transistor of the dual-gate structure on the substrate.

2. The display substrate according to claim 1, wherein: The at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first electrode plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the fourth electrode plate, and the orthographic projection of the first shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the initialization transistor on the substrate.

3. The display substrate according to claim 2, wherein: The fourth electrode plate and the first shielding electrode are an integrated structure.

4. The display substrate according to claim 2, wherein: The first shielding electrode includes a first extension segment and a first shielding segment, the first extension segment is in the shape of a strip extending along the second direction, the first end of the first extension segment is connected to the fourth electrode plate, and the second end of the first extension segment is connected to the first end of the first shielding segment; the first shielding segment is in the shape of a strip extending along the first direction, the first end of the first shielding segment is connected to the second end of the first extension segment, and the second end of the first shielding segment extends along the first direction, the orthographic projection of the first shielding segment on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the first initialization transistor on the substrate, and the first direction intersects with the second direction.

5. The display substrate according to claim 1, wherein: At least one circuit unit also includes at least one first power connection line extending along a first direction, the shape of the first power line is a line shape extending along a second direction, and the first direction intersects with the second direction; the first power line is connected to the first power connection line to form a mesh structure for transmitting a first power signal.

6. The display substrate according to claim 5, wherein: The at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first electrode plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, the first shielding electrode is connected to the first power connection line, and the orthographic projection of the first shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the initialization transistor on the substrate.

7. The display substrate according to claim 6, wherein: The first power connection line and the first shielding electrode are an integrated structure.

8. The display substrate according to claim 5, wherein: At least one circuit unit also includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes an initialization transistor, a first electrode of the initialization transistor is connected to the first initial signal line, and a second electrode of the initialization transistor is connected to the first electrode plate of the first storage capacitor; the at least one shielding electrode includes a first shielding electrode, which is connected to the shielding connection line, and the positive projection of the first shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the initialization transistor on the substrate.

9. The display substrate according to claim 2, wherein: The at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor is connected to the first electrode plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the fourth electrode plate, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

10. The display substrate according to claim 9, wherein: The fourth electrode plate and the second shielding electrode are an integral structure.

11. The display substrate according to claim 9, wherein: The second shielding electrode includes a second extension segment and a second shielding segment, the second extension segment is in the shape of a strip extending along the second direction, the first end of the second extension segment is connected to the fourth electrode plate, and the second end of the second extension segment is connected to the first end of the second shielding segment; the second shielding segment is in the shape of a strip extending along the first direction, the first end of the second shielding segment is connected to the second end of the second extension segment, and the second end of the second shielding segment extends in the opposite direction of the first direction, the positive projection of the second shielding segment on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the compensation transistor on the substrate, and the first direction intersects with the second direction.

12. The display substrate according to claim 5, wherein: The at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first electrode plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, the second shielding electrode is connected to the first power connection line, and the orthographic projection of the second shielding electrode on the substrate at least partially overlaps with the orthographic projection of the node between the two gate electrodes of the compensation transistor on the substrate.

13. The display substrate according to claim 12, wherein: The first power connection line and the second shielding electrode are an integrated structure.

14. The display substrate according to claim 5, wherein: At least one circuit unit also includes a shielding connection line, which is connected to the first power connection line; the at least one dual-gate structure transistor includes a compensation transistor, a first electrode of the compensation transistor and a first electrode plate of the first storage capacitor; the at least one shielding electrode includes a second shielding electrode, which is connected to the shielding connection line, and the positive projection of the second shielding electrode on the substrate at least partially overlaps with the positive projection of the node between the two gate electrodes of the compensation transistor on the substrate.

15. The display substrate according to any one of claims 1 to 14, wherein: The at least one dual-gate structure transistor comprises a data writing transistor, a first electrode of the data writing transistor is connected to the data signal line, and a second electrode of the data writing transistor is connected to the second electrode plate of the second storage capacitor; The at least one shielding electrode includes a third shielding electrode connected to the fourth electrode plate, and an orthographic projection of the third shielding electrode on the substrate at least partially overlaps an orthographic projection of a node between two gate electrodes of the data writing transistor on the substrate.

16. The display substrate according to claim 15, wherein: The fourth electrode plate and the third shielding electrode are an integrated structure.

17. The display substrate according to any one of claims 1 to 14, wherein: The at least one dual-gate structure transistor comprises a reference transistor, a first electrode of the reference transistor is connected to the second reference signal line, and a second electrode of the reference transistor is connected to the second electrode plate of the second storage capacitor; The at least one shielding electrode comprises a fourth shielding electrode connected to the fourth electrode plate, and an orthographic projection of the fourth shielding electrode on the substrate at least partially overlaps an orthographic projection of a node between two gate electrodes of the reference transistor on the substrate.

18. The display substrate according to claim 17, wherein: The fourth electrode plate and the fourth shielding electrode are an integrated structure.

19. A display device, wherein: The display substrate comprises the display substrate as claimed in any one of claims 1 to 18.

20. A display substrate, comprising a driving circuit layer arranged on a substrate, the driving circuit layer comprising at least a plurality of circuit units, at least one circuit unit comprising a pixel driving circuit, the pixel driving circuit comprising a first storage capacitor, a second storage capacitor, at least one shielding electrode and at least one transistor with a dual-gate structure, the first storage capacitor comprising at least a first plate and a third plate, the second storage capacitor comprising at least a second plate and a fourth plate, the orthographic projection of the shielding electrode on the substrate and the orthographic projection of a node between two gate electrodes of the transistor with a dual-gate structure on the substrate at least partially overlap; the at least one transistor with a dual-gate structure comprises a first transistor to a ninth transistor, the pixel driving circuit further comprises a first node, a second node, a third node, A node, a fourth node and a fifth node, the first node is respectively connected to the second electrode of the first transistor, the first electrode of the second transistor, the gate electrode of the third transistor and the first plate of the first storage capacitor, the second node is respectively connected to the first electrode of the third transistor, the second electrode of the eighth transistor and the second electrode of the fifth transistor, the third node is respectively connected to the second electrode of the second transistor, the second electrode of the third transistor and the first electrode of the sixth transistor, the fourth node is respectively connected to the second electrode of the sixth transistor and the second electrode of the seventh transistor, the fifth node is respectively connected to the second electrode of the fourth transistor, the second electrode of the ninth transistor, the third plate of the first storage capacitor and the second plate of the second storage capacitor; the fourth plate of the second storage capacitor is connected to the first power line.

21. A display device, wherein: Comprising the display substrate as claimed in claim 20.

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