Display substrate and display screen

Abstract

The embodiments of the present disclosure provide a display substrate and a display screen. A trapezoidal reflection structure is arranged on a TFE, a low-refractive-index reflection layer is arranged on the trapezoidal reflection structure, a high-refractive-index reflection layer is then arranged on the low-refractive-index reflection layer, and finally, a cover plate is attached to the high-refractive-index reflection layer. When light enters the low-refractive-index reflection layer from the high-refractive-index reflection layer, due to the existence of a refractive index difference value, part of the light exhibits a total reflection phenomenon when an incident angle is greater than a critical angle, such that the low-refractive-index reflection layer can function as a condensing lens; and after the direction of large-angle transverse light is changed by means of full emission, the large-angle transverse light is changed into forward effective light and is then output, thereby improving the light output efficiency of a display substrate and increasing the brightness at a normal viewing angle.

Description

Display substrate and display screen

[0001] Cross-references to related publications

[0002] This application claims priority to Chinese Patent Publication No. 202310720543.X filed in China on June 16, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] The present disclosure relates to the field of electronic technology, and in particular to a display substrate and a display screen. Background Art

[0004] Since their development, OLED (Organic Light-Emitting Diode) devices have rapidly gained market advantages due to their lightness, thinness, compactness, exquisiteness, sensitivity, and bright colors. However, OLED devices currently still suffer from low blue light efficiency and short lifespan. Furthermore, the external quantum efficiency of OLED devices is very low, typically less than 20%. Among the several modes of light loss, the waveguide effect accounts for a large part. Therefore, there is an urgent need to improve the light output of the display substrate and increase the brightness at normal viewing angles.

[0005] Summary of the Invention

[0006] The purpose of the embodiments of the present disclosure is to provide a display substrate and a display screen to improve the light extraction efficiency of the display substrate and increase the brightness at normal viewing angles. The specific technical solutions are as follows:

[0007] In a first aspect, an embodiment of the present disclosure provides a display substrate, comprising:

[0008] Backplane layer, pixel layer, cathode layer, thin film encapsulation layer, trapezoidal reflective structure layer, low refractive index reflective layer, high refractive index reflective layer, cover layer; the pixel layer includes a pixel light emitting structure and a pixel definition structure;

[0009] The pixel layer is arranged on the backplane layer, the cathode layer is arranged on a side of the pixel layer away from the backplane layer, the thin film encapsulation layer is arranged on a side of the cathode layer away from the backplane layer, the trapezoidal reflective structure layer is arranged on a side of the thin film encapsulation layer away from the backplane layer, and the orthographic projection of the trapezoidal reflective structure layer on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the backplane layer; the low-refractive index layer is arranged on a side of the trapezoidal reflective structure layer and the thin film encapsulation layer away from the backplane layer; and the high-refractive index layer is arranged on a side of the low-refractive index layer away from the backplane layer;

[0010] The refractive index of the low-refractive-reflective layer is lower than a first refractive-index threshold; the refractive index of the high-refractive-reflective layer is higher than a second refractive-index threshold; and the second refractive-index threshold is higher than the first refractive-index threshold.

[0011] In one possible embodiment, in a plane perpendicular to the backplane layer, the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures, and for each trapezoidal reflective structure, the trapezoidal reflective structure includes a lower base close to the backplane layer and an upper base away from the backplane layer, and the length of the upper base is smaller than the length of the lower base.

[0012] In a possible implementation, the refractive index of the low-refractive-reflective layer is in the range of 1.2-1.5.

[0013] In a possible implementation, the refractive index of the high-refractive-reflective layer is not less than 1.7.

[0014] In a possible implementation, a difference between a refractive index of the high-refractive-reflective layer and a refractive index of the low-refractive-reflective layer is not less than 0.3.

[0015] In a possible implementation, the low refractive index layer includes SiO 2 , LiF or MgF 2 .

[0016] In one possible implementation, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0017] The lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure;

[0018] For each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

[0019] In one possible implementation, 1 / 2pitch≤W2≤W1≤W3≤pitch, where W1 is the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, W2 is the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure, W3 is the lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure, and pitch is the lower base length of the pixel definition structure.

[0020] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0021] The bottom angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure; wherein the two bottom angles of the trapezoidal reflective structure are equal;

[0022] For each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

[0023] In one possible embodiment, 35°≤θ3≤θ1≤θ2≤80°, where θ1 is the angle of the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, θ2 is the angle of the bottom angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure, and θ3 is the angle of the bottom angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure.

[0024] In one possible implementation, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0025] The angle of the base angle corresponding to the B pixel light-emitting structure is not greater than the angle of the base angle corresponding to the R pixel light-emitting structure, and the angle of the base angle corresponding to the R pixel light-emitting structure is not greater than the angle of the base angle corresponding to the G pixel light-emitting structure;

[0026] Among them, for each pixel light-emitting structure, the bottom angle corresponding to the pixel light-emitting structure is the second side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction, and the first side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the second side of the pixel light-emitting structure in the vertical direction, wherein, for each pixel definition structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel definition structure in the vertical direction on the back layer overlaps with the orthographic projection of the pixel definition structure on the back layer.

[0027] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0028] The height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure;

[0029] For each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

[0030] In a possible implementation, 1um≤h2≤h1≤h3≤10um, where h1 is the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, h2 is the height of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure, and h3 is the height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure.

[0031] In a second aspect, an embodiment of the present disclosure provides a display screen comprising any display substrate described in the first aspect.

[0032] Beneficial effects of the embodiments of the present disclosure:

[0033] The embodiments of the present disclosure provide a display substrate and a display screen. A trapezoidal reflective structure is provided on TFE, a low-refractive index reflective layer is provided on the trapezoidal reflective structure, and then a high-refractive index reflective layer is provided on the low-refractive index reflective layer. Finally, a cover plate is attached. When light enters the low-refractive index reflective layer from the high-refractive index reflective layer, due to the existence of the refractive index difference, part of the light is totally reflected after the incident angle is greater than the critical angle. In this way, the low-refractive index reflective layer can act as a focusing lens, changing the direction of large-angle lateral light through total reflection to convert it into forward effective light output, thereby improving the light output rate of the display substrate and increasing the brightness at the normal viewing angle.

[0034] Of course, it is not necessary to achieve all of the advantages described above at the same time when implementing any product or method disclosed herein. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other embodiments can also be obtained based on these drawings.

[0036] FIG1 is a schematic diagram of a display substrate in the related art;

[0037] FIG2-1 is a first schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0038] FIG2-2 is a schematic top view of a display substrate according to an embodiment of the present disclosure;

[0039] FIG3-1 is a schematic diagram of the optical path principle of an embodiment of the present disclosure;

[0040] FIG3-2 is a schematic diagram of a simulation effect of an embodiment of the present disclosure;

[0041] FIG4-1 is a first schematic diagram of simulation gain according to an embodiment of the present disclosure;

[0042] FIG4-2 is a second schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0043] FIG5-1 is a second schematic diagram of simulation gain according to an embodiment of the present disclosure;

[0044] FIG5-2 is a third schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0045] FIG6 is a fourth schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0046] FIG7-1 is a third schematic diagram of simulation gain according to an embodiment of the present disclosure;

[0047] FIG7-2 is a fifth schematic diagram of a display substrate according to an embodiment of the present disclosure;

[0048] Description of the accompanying symbols: backplane layer 01, pixel definition structure 02, pixel light-emitting structure 03, cathode layer 04, thin film encapsulation layer 05, trapezoidal reflection structure layer 06, low refractive index layer 07, high refractive index layer 08, cover layer 09. DETAILED DESCRIPTION

[0049] The following will be combined with the accompanying drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the embodiments described are only part of the embodiments of the present disclosure, rather than all the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field based on the present disclosure are within the scope of protection of the present disclosure.

[0050] In the related art, as shown in Figure 1, Figure 1 is a schematic diagram of a display substrate in the related art. The display substrate includes a TFT (Thin Film Transistor) layer, an OLED-R (red) light-emitting structure, an OLED-G (green) light-emitting structure, an OLED-B (blue) light-emitting structure, a cathode layer (Cathode), TFE (thin film encapsulation layer), an encapsulation adhesive, a Glass (glass cover layer) and other structural layers. According to the law of refraction in optics, the light transmitted in the OLED will be absorbed and waveguided between film layers with a large difference in refractive index, resulting in the light being confined in the structural layer, thereby reducing the light extraction efficiency of the OLED.

[0051] In order to improve the light extraction rate of a display substrate and increase the brightness at a normal viewing angle, an embodiment of the present disclosure provides a display substrate. Referring to FIG. 2-1 , the display substrate includes:

[0052] Backplane layer 01, pixel layer, cathode layer 04, thin film encapsulation layer (TFE) 05, trapezoidal reflective structure layer 06, low refractive index layer 07, high refractive index layer 08, cover layer 09; the pixel layer includes pixel light emitting structure 03 and pixel definition structure (PDL) 02;

[0053] The pixel layer is arranged on the backplane layer 01, the cathode layer 04 is arranged on a side of the pixel layer away from the backplane layer 01, the thin film encapsulation layer 05 is arranged on a side of the cathode layer 04 away from the backplane layer 01, the trapezoidal reflective structure layer 06 is arranged on a side of the thin film encapsulation layer 05 away from the backplane layer 01, and the orthographic projection of the trapezoidal reflective structure layer 06 on the backplane layer 01 overlaps with the orthographic projection of the pixel definition structure 02 on the backplane layer 01; the low-refractive index layer 07 is arranged on a side of the trapezoidal reflective structure layer 06 and the thin film encapsulation layer 05 away from the backplane layer 01; and the high-refractive index layer 08 is arranged on a side of the low-refractive index layer 07 away from the backplane layer 01.

[0054] The refractive index of the low-refractive-reflective layer 07 is lower than a first refractive-index threshold; the refractive index of the high-refractive-reflective layer 08 is higher than a second refractive-index threshold; and the second refractive-index threshold is higher than the first refractive-index threshold.

[0055] The cover layer may be a glass cover.

[0056] The pixel light-emitting structure generally includes an R pixel light-emitting structure, a B pixel light-emitting structure, and a G pixel light-emitting structure. The R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light. The PDL (Pixel Define Layer) is used to separate different pixel light-emitting structures.

[0057] In one example, the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures. Exemplarily, the number of the trapezoidal reflective structures may be the same as the number of the pixel definition structures, and the position of the trapezoidal reflective structure in the vertical direction corresponds to the position of the pixel definition structure in the vertical direction, that is, the orthographic projection of the trapezoidal reflective structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the backplane layer, wherein the vertical direction of the present disclosure is with respect to the display substrate, for example, as shown in FIG2-1, the vertical direction refers to the direction perpendicular to the display substrate film layer. In other words, the trapezoidal reflective structure layer is arranged in the non-luminous area, that is, above the PDL area. Therefore, the position of the trapezoidal reflective structure and the size of the trapezoidal reflective structure can be determined based on the position of the PDL and the size of the PDL, wherein the size of the trapezoidal reflective structure may include the bottom width of the trapezoidal reflective structure, the angle of the bottom angle of the trapezoidal reflective structure, the height of the trapezoidal reflective structure, etc. As shown in Figure 2-2, Figure 2-2 is a top view schematic diagram of the display substrate, wherein the R-marked R pixel light-emitting structure, the B-marked B pixel light-emitting structure, and the G-marked G pixel light-emitting structure. Because the positive projection of the trapezoidal reflective structure overlaps with the positive projection of the pixel definition structure on the above-mentioned backplane layer, the trapezoidal reflective structure is far away from the backplane layer relative to the pixel definition structure, and the trapezoidal reflective structure blocks the pixel definition structure. Therefore, the pixel definition structure is not shown in Figure 2-2.

[0058] Exemplarily, the vertical position of the trapezoidal reflective structure is determined based on the vertical position of the pixel definition structure. In one example, the width of the corresponding bottom base of the trapezoidal reflective structure is determined based on the size of the pixel definition structure opening. The size of the pixel definition structure opening can be the width of the bottom base of the pixel definition structure. Because the trapezoidal reflective structure must be located in the non-luminous area, the bottom base width of the trapezoidal reflective structure can be no greater than the width of the PDL opening to avoid blocking light.

[0059] Then, based on the perpendicular bisector of the lower base of the pixel definition structure, the midpoint of the lower base of the trapezoidal reflective structure is determined, wherein the midpoint of the lower base of the trapezoidal reflective structure is located on the perpendicular bisector of the lower base of the pixel definition structure, and then the height of the trapezoidal reflective structure and the size of the bottom angle are determined based on the actual situation. Among them, the sizes of all the trapezoidal reflective structures can be the same or different. Exemplarily, the size of the trapezoidal reflective structure can be determined based on the type of light irradiated to the trapezoidal reflective structure, so that trapezoidal reflective structures of different sizes can be prepared at each PDL opening. In order to make the scheme and layout clear, the following is a detailed description in conjunction with another embodiment.

[0060] In one example, a trapezoidal reflective structure layer can be fabricated using a photolithography process. The larger the bottom angle (profile angle) of the trapezoidal reflective structure, the smaller the light gain. However, when the bottom angle of the trapezoidal reflective structure is less than 35°, full reflection cannot occur. Therefore, the bottom angle of the trapezoidal reflective structure layer can be no less than 35°. The thickness of the trapezoidal reflective structure can be set based on actual conditions. For example, the thickness of the trapezoidal reflective structure is 1.5 μm to 4 μm.

[0061] The refractive index of the low-refractive index reflective layer and the refractive index of the high-refractive index reflective layer can be determined based on actual conditions. In one example, the refractive index of the low-refractive index reflective layer can be in the range of 1.2-1.5, and the refractive index of the high-refractive index reflective layer is not less than 1.7. Exemplarily, the difference between the refractive index of the high-refractive index reflective layer and the refractive index of the low-refractive index reflective layer is not less than 0.3. For example, the refractive index of the high-refractive index reflective layer is 1.8, and the refractive index of the low-refractive index reflective layer is 1.4.

[0062] After the trapezoidal emitting structure, low-refractive index layer, and high-refractive index layer are provided, the optical path principle can be specifically illustrated as shown in Figure 3-1. Assuming the divergence angle of light emitted by the pixel light-emitting structure is β, the light is incident on the side at an angle α relative to the normal line of the side edge of the trapezoidal reflective structure and is emitted perpendicularly. Here, H is the overall encapsulation thickness of the thin film encapsulation layer (TFE), h is the height of the trapezoidal reflective structure, θ represents the approximate profile angle of the hypotenuse of the trapezoidal reflective structure, i.e., the base angle of the trapezoidal reflective structure, n_high represents the refractive index of the high-refractive index layer, n_low represents the refractive index of the low-refractive index layer, y represents the lateral region where light emitted from the pixel light-emitting structure can be totally reflected from the side edge, Y represents the lateral region where light emitted from the pixel light-emitting structure cannot be totally reflected from the side edge, A represents the position of light emitted from the pixel light-emitting structure with a divergence angle β incident on the low-refractive index reflective structure, P represents the intersection of the lateral region where light emitted from the pixel light-emitting structure cannot be totally reflected from the side edge and the trapezoidal reflective structure, and x is the distance from the orthographic projection of A on the bottom of the trapezoidal reflective structure to P.

[0063] Then, total reflection can occur when the following conditions are met: n_high·sinα=n_low·sin90 (1) β=180-α-θ (2)

[0064] By setting a trapezoidal reflective structure on TFE, setting a low-refractive index reflective layer on the trapezoidal reflective structure, and then setting a high-refractive index reflective layer on the low-refractive index reflective layer, and finally affixing a cover plate, when light enters the low-refractive index reflective layer from the high-refractive index reflective layer, due to the existence of the refractive index difference, part of the light will be totally reflected after the incident angle is greater than the critical angle. In this way, the low-refractive index reflective layer can act as a focusing lens, changing the direction of large-angle lateral light through total emission and converting it into forward effective light output, thereby improving the light output rate of the display substrate and increasing the brightness at the positive viewing angle.

[0065] In one possible embodiment, in a plane perpendicular to the backplane layer, the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures, and for each trapezoidal reflective structure, the trapezoidal reflective structure includes a lower base close to the backplane layer and an upper base away from the backplane layer, and the length of the upper base is smaller than the length of the lower base.

[0066] Because there are multiple PDLs that separate different pixel light-emitting structures, if there are multiple non-light-emitting areas in the display substrate, a trapezoidal reflective structure can be set in each non-light-emitting area. In one example, the number of trapezoidal reflective structures is the same as the number of pixel definition structures.

[0067] For each trapezoidal reflective structure, the lower base of the trapezoidal reflective structure is close to the backplane layer, the upper base is away from the backplane layer, and the length of the upper base is less than the length of the lower base. Exemplarily, the length of the lower base of the trapezoidal reflective structure can be determined based on the size of the PDL opening (the length of the lower base of the PDL). For example, the length of the lower base of the trapezoidal reflective structure is not greater than the length of the lower base of the PDL.

[0068] In a possible implementation, the refractive index of the low-refractive-reflective layer is in the range of 1.2-1.5.

[0069] The refractive index of the low-refractive-reflective layer can range from 1.2 to 1.5. Exemplarily, the low-refractive-reflective layer includes SiO2, LiF, or MgF2. That is, the low-refractive-reflective layer can be a reflective layer formed from one of SiO2, LiF, or MgF2. The preparation method is simple, such as CVD (Chemical Vapor Deposition), which is a process used for evaporation.

[0070] In a possible implementation, the difference between the refractive index of the high-refractive-reflective layer and the refractive index of the low-refractive-reflective layer is not less than 0.3.

[0071] The refractive index of the high-refractive-reflective layer must be higher than that of the low-refractive-reflective layer, wherein the difference between the refractive indices of the high-refractive-reflective layer and the low-refractive-reflective layer is not less than 0.3. In one example, the refractive index of the high-refractive-reflective layer is greater than 1.7.

[0072] The high refractive index reflective layer may be a reflective layer formed by a glue material doped with high refractive index particles such as ZrO2, etc. The high refractive index reflective layer may be prepared by spin coating, printing, hose coating, etc.

[0073] As shown in Figure 3-2, Figure 3-2 shows the simulation results of the light output rate of the substrate when the bottom angle of the trapezoidal reflection structure is 40° and the filling layers (high refractive index layer, low refractive index layer) have different refractive indices, and R (red) light, G (green) light, and B (blue) light enter the low refractive index layer from the high refractive index layer respectively.

[0074] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0075] The lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure;

[0076] Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the above-mentioned backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the above-mentioned backplane layer.

[0077] Normally, the brightness ratio of R (red), G (green), and B (blue) light required to achieve white balance is 3:6:1. In OLED devices, B light has the lowest light extraction efficiency, while G light has the highest. As shown in the simulated gain effect in Figure 4-1, the larger the space occupied by the trapezoidal reflective structure, that is, the wider the bottom of the trapezoidal reflective structure, the greater the light gain.

[0078] For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure can be determined based on the pixel definition structure on the first side of the pixel light-emitting structure. Specifically, the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction is used as the trapezoidal reflective structure corresponding to the pixel light-emitting structure. When there are pixel light-emitting structures on both sides of the pixel definition structure, as shown in FIG4-2, the first side is the left side of the pixel light-emitting structure along the direction of the display substrate film layer, or it can be the right side of the pixel light-emitting structure along the direction of the display substrate film layer. It can be set specifically according to actual conditions. When there is only one pixel light-emitting structure on both sides of the pixel definition structure, that is, for each trapezoidal reflective structure, only the light emitted by the pixel light-emitting structure passes through the trapezoidal reflective structure, then the trapezoidal reflective structure is the trapezoidal reflective structure corresponding to the pixel light-emitting structure. The first side of the pixel light-emitting structure can be determined based on actual conditions and is not limited here.

[0079] After determining the trapezoidal reflective structure corresponding to the pixel light-emitting structure, based on the type of pixel light-emitting structure, the light output efficiency of R light, G light, and B light can be adjusted by adjusting the width of the lower base of the trapezoidal reflective structure. Specifically, the lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure can be set to be no less than the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure can be set to be no less than the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure. In this way, the light output efficiency of B light and R light can be increased to achieve the white balance of the device.

[0080] For example, as shown in Figure 4-2, the display substrate includes TFT, PDL, OLED-R, OLED-G, OLED-B, TFE, a trapezoidal reflective structure, a low-refractive index reflective layer, a high-refractive index reflective layer, and a Glass cover layer. For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure is the trapezoidal reflective structure corresponding to the pixel definition structure on the left side of the pixel light-emitting structure in the vertical direction. From left to right, there are a total of 4 trapezoidal reflective structures. The first trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-R, so the lower bottom length of the first trapezoidal reflective structure is determined as W1 based on R light, the second trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-G, then the lower bottom length of the second trapezoidal reflective structure is determined as W2 based on G light, the third trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-B, then the lower bottom length of the third trapezoidal reflective structure is determined as W3 based on B light, and the fourth trapezoidal reflective structure has only B light passing through the trapezoidal reflective structure, then the lower bottom length of the fourth trapezoidal reflective structure is determined as W3 based on B light, wherein W2≤W1≤W3.

[0081] In an example, if the bottom length of the pixel definition structure is pitch, then 1 / 2pitch≤W2≤W1≤W3≤pitch can be set.

[0082] After determining the length of the lower base of the trapezoidal reflective structure, the position of the lower base of the trapezoidal reflective structure can be determined based on the perpendicular midline of the lower base of the PDL. The midpoint of the lower base of the trapezoidal reflective structure can be located on the perpendicular midline of the lower base of the PDL. The angle of the bottom angle of the trapezoidal reflective structure and the height of the trapezoidal reflective structure can be set based on actual conditions.

[0083] For example, the process involves creating trapezoidal structures of varying sizes at the opening of each pixel-defining structure using different mask sizes during the photolithography process. By optimizing the light-extraction structure, the device's white balance is optimized, improving device brightness and color gamut, and reducing OLED device power consumption, while also meeting the demands of high-resolution products.

[0084] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0085] The bottom angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure; wherein the two bottom angles of the trapezoidal reflective structure are equal;

[0086] Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the above-mentioned backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the above-mentioned backplane layer.

[0087] Normally, the brightness ratio of R (red) light, G (green) light, and B (blue) light to achieve white balance is 3:6:1. In OLED devices, B light has the lowest light output efficiency, while G light has the highest light output efficiency.

[0088] As shown in the simulated gain effect in Figure 5-1, the larger the bottom angle (Profile angle) of the trapezoidal reflective structure, the smaller the light gain. Therefore, for each pixel light-emitting structure, the light output rate corresponding to the pixel light-emitting structure can be adjusted by setting the angle of the bottom angle of the trapezoidal reflective structure corresponding to the pixel light-emitting structure, thereby adjusting the light output efficiency of R light, G light, and B light.

[0089] For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure can be determined based on the pixel definition structure on the first side of the pixel light-emitting structure. Specifically, the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction is used as the trapezoidal reflective structure corresponding to the pixel light-emitting structure. When there are pixel light-emitting structures on both sides of the pixel definition structure, as shown in FIG5-2, the first side is the left side of the pixel light-emitting structure along the direction of the display substrate film layer, or it can be the right side of the pixel light-emitting structure along the direction of the display substrate film layer. It can be set specifically according to actual conditions. When there is only one pixel light-emitting structure on both sides of the pixel definition structure, that is, for each trapezoidal reflective structure, only the light emitted by the pixel light-emitting structure passes through the trapezoidal reflective structure, then the trapezoidal reflective structure is the trapezoidal reflective structure corresponding to the pixel light-emitting structure. The first side of the pixel light-emitting structure can be determined based on actual conditions and is not limited here.

[0090] After determining the trapezoidal reflective structure corresponding to the pixel light-emitting structure, the base angle of the trapezoidal reflective structure is set based on the type of pixel light-emitting structure. The trapezoidal reflective structure is an isosceles trapezoid, that is, the two base angles of the trapezoidal reflective structure are equal. The base angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is no greater than the base angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the base angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is no greater than the base angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure. This can increase the light extraction efficiency of B and R light to achieve white balance of the device.

[0091] For example, as shown in Figure 5-2, the display substrate includes TFT, PDL, OLED-R, OLED-G, OLED-B, TFE, a trapezoidal reflective structure, a low-refractive index reflective layer, a high-refractive index reflective layer, and a Glass cover layer. For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure is the trapezoidal reflective structure corresponding to the pixel definition structure on the left side of the pixel light-emitting structure in the vertical direction. From left to right, there are a total of 4 trapezoidal reflective structures. The first trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-R, so the angle of the bottom angle of the first trapezoidal reflective structure is determined based on R light as θ1. The second trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-G, so the angle of the bottom angle of the second trapezoidal reflective structure is determined based on G light as θ2. The third trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-B, so the angle of the bottom angle of the third trapezoidal reflective structure is determined based on B light as θ3. The fourth trapezoidal reflective structure only has B light passing through it, so the angle of the bottom angle of the fourth trapezoidal reflective structure is determined based on B light as θ3. Among them, θ3≤θ1≤θ2. After determining the angle of the bottom angle of the trapezoidal reflective structure, the trapezoidal reflective structure can be set based on the preset length of the lower bottom of the trapezoidal reflective structure and the height of the trapezoidal reflective structure. In an example, 35°≤θ3≤θ1≤θ2≤80°

[0092] By adjusting the angle of the trapezoidal structure, the light output structure can be optimized, the device white balance can be optimized, the device brightness and color gamut can be improved, the power consumption of the OLED device can be reduced, and at the same time, the needs of high-resolution products can be met.

[0093] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0094] The angle of the base angle corresponding to the B pixel light-emitting structure is not greater than the angle of the base angle corresponding to the R pixel light-emitting structure, and the angle of the base angle corresponding to the R pixel light-emitting structure is not greater than the angle of the base angle corresponding to the G pixel light-emitting structure;

[0095] Among them, for each pixel light-emitting structure, the bottom angle corresponding to the pixel light-emitting structure is the second side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction, and the first side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the second side of the pixel light-emitting structure in the vertical direction.

[0096] The angle of the base angle corresponding to the B pixel light-emitting structure is not greater than the angle of the base angle corresponding to the R pixel light-emitting structure, and the angle of the base angle corresponding to the R pixel light-emitting structure is not greater than the angle of the base angle corresponding to the G pixel light-emitting structure;

[0097] Among them, for each pixel light-emitting structure, the bottom angle corresponding to the pixel light-emitting structure is the second side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction, and the first side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the second side of the pixel light-emitting structure in the vertical direction, wherein, for each pixel definition structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel definition structure in the vertical direction on the above-mentioned backplane layer overlaps with the orthographic projection of the pixel definition structure on the above-mentioned backplane layer.

[0098] Normally, the brightness ratio of R (red) light, G (green) light, and B (blue) light to achieve white balance is 3:6:1. In OLED devices, B light has the lowest light output efficiency, while G light has the highest light output efficiency.

[0099] The larger the bottom angle (Profile angle) of the trapezoidal reflective structure, the smaller the light gain. Therefore, for each pixel light-emitting structure, the light output rate corresponding to the pixel light-emitting structure can be adjusted by setting the angle of the bottom angle of the trapezoidal reflective structure corresponding to the pixel light-emitting structure, thereby adjusting the light output efficiency of R light, G light, and B light.

[0100] Because the trapezoidal reflective structure corresponds to the pixel definition structure in the vertical direction, and the pixel definition structure isolates different pixel light-emitting structures, there is a possibility that two types of light will illuminate the structure of a trapezoidal reflective structure. Therefore, it is necessary to determine the size of its bottom angle based on the type of light irradiated on each side of the trapezoidal reflective structure. In order to determine the angle of the trapezoidal reflective structure, for each pixel light-emitting structure, the bottom angle corresponding to the pixel light-emitting structure is the second side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction, and the first side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the second side of the pixel light-emitting structure in the vertical direction. Among them, the first side bottom angle and the second side bottom angle are different bottom angles. For each trapezoidal reflective structure, if there is no corresponding pixel definition structure on one side bottom angle, the angle of the bottom angle on that side is equal to the angle of the bottom angle on the other side.

[0101] After determining the trapezoidal reflective structure corresponding to the pixel light-emitting structure, the bottom angles of the two sides of the trapezoidal reflective structure are set based on the type of pixel light-emitting structure. The bottom angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is no greater than the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is no greater than the bottom angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure. This can increase the light extraction efficiency of B and R light to achieve white balance of the device.

[0102] For example, as shown in FIG6 , the display substrate includes a TFT, a PDL, an OLED-R, an OLED-G, an OLED-B, a TFE, a trapezoidal reflective structure, a low-refractive index layer, a high-refractive index layer, and a glass cover layer. For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure is the trapezoidal reflective structure corresponding to the pixel definition structure on the left side of the pixel light-emitting structure in the vertical direction. From left to right, there are a total of four trapezoidal reflective structures. The second trapezoidal reflective structure, wherein the bottom angle on the left side of the second trapezoidal reflective structure corresponds to the OLED-R, and the bottom angle on the right side of the second trapezoidal reflective structure corresponds to the OLED-G. Then, the angle of the left bottom angle of the second trapezoidal reflective structure is determined as θ1 based on R light, and the angle of the right bottom angle of the second trapezoidal reflective structure is determined as θ2 based on R light. θ3<θ1<θ2. After determining the bottom angle of the trapezoidal reflective structure, the trapezoidal reflective structure can be set based on the preset length of the lower base of the trapezoidal reflective structure and the height of the trapezoidal reflective structure.

[0103] By adjusting the angle of the trapezoidal structure, the light output structure can be optimized, the device white balance can be optimized, the device brightness and color gamut can be improved, the power consumption of the OLED device can be reduced, and at the same time, the needs of high-resolution products can be met.

[0104] In one possible embodiment, the pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures;

[0105] The height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure;

[0106] Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the above-mentioned backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the above-mentioned backplane layer.

[0107] Normally, the brightness ratio of R (red) light, G (green) light, and B (blue) light to achieve white balance is 3:6:1. In OLED devices, B light has the lowest light output efficiency, while G light has the highest light output efficiency.

[0108] As shown in the simulated gain effect of Figure 7-1, the higher the height of the trapezoidal reflective structure, the greater the light gain. Therefore, for each pixel light-emitting structure, the light output rate corresponding to the pixel light-emitting structure can be adjusted by setting the height of the trapezoidal reflective structure corresponding to the pixel light-emitting structure, thereby adjusting the light output efficiency of R light, G light, and B light.

[0109] For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure can be determined based on the pixel definition structure on the first side of the pixel light-emitting structure. Specifically, the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction is used as the trapezoidal reflective structure corresponding to the pixel light-emitting structure. When there are pixel light-emitting structures on both sides of the pixel definition structure, as shown in FIG6 , the first side is the left side of the pixel light-emitting structure along the direction of the display substrate film layer, or it can be the right side of the pixel light-emitting structure along the direction of the display substrate film layer. It can be set specifically according to actual conditions. When there is only one pixel light-emitting structure on both sides of the pixel definition structure, that is, for each trapezoidal reflective structure, only the light emitted by the pixel light-emitting structure passes through the trapezoidal reflective structure, then the trapezoidal reflective structure is the trapezoidal reflective structure corresponding to the pixel light-emitting structure. The first side of the pixel light-emitting structure can be determined based on actual conditions and is not limited here.

[0110] After determining the trapezoidal reflective structure corresponding to the pixel light-emitting structure, the height of the trapezoidal reflective structure is set based on the type of pixel light-emitting structure. The height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is no less than that corresponding to the R pixel light-emitting structure, and the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is no less than that corresponding to the G pixel light-emitting structure. This can increase the light extraction efficiency of B and R light to achieve white balance of the device.

[0111] For example, as shown in FIG7-2, the display substrate includes a TFT, a PDL, an OLED-R, an OLED-G, an OLED-B, a TFE, a trapezoidal reflective structure, a low-refractive index layer, a high-refractive index layer, and a glass cover layer. For each pixel light-emitting structure, the trapezoidal reflective structure corresponding to the pixel light-emitting structure is the trapezoidal reflective structure corresponding to the pixel definition structure on the left side of the pixel light-emitting structure in the vertical direction. From left to right, there are a total of four trapezoidal reflective structures. The first trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-R, and the height of the first trapezoidal reflective structure is determined based on R light as h1. The second trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-G, and the height of the second trapezoidal reflective structure is determined based on G light as h2. The third trapezoidal reflective structure is the pixel light-emitting structure corresponding to OLED-B, and the height of the third trapezoidal reflective structure is determined based on B light as h3. The fourth trapezoidal reflective structure only passes through B light, and the base angle of the fourth trapezoidal reflective structure is determined based on B light as h3. Wherein, h2≤h1≤h3. In one example, 1um≤h2≤h1≤h3≤10um. After determining the height of the trapezoidal reflective structure, the trapezoidal reflective structure can be set based on the preset length of the bottom of the trapezoidal reflective structure and the angle of the trapezoidal reflective structure.

[0112] By adjusting the angle of the trapezoidal structure, the light output structure can be optimized, the device white balance can be optimized, the device brightness and color gamut can be improved, the power consumption of the OLED device can be reduced, and at the same time, the needs of high-resolution products can be met.

[0113] Based on the above embodiments, in a possible implementation manner, for each trapezoidal reflective structure, the height, bottom width, and the angles of the two bottom angles of the trapezoidal reflective structure can be determined based on its corresponding pixel light-emitting structure. By adjusting the angle of the trapezoidal structure, the light output structure can be optimized, the white balance of the device can be optimized, the brightness and color gamut of the device can be improved, the power consumption of the OLED device can be reduced, and at the same time, the needs of high-resolution products can be met.

[0114] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0115] Each embodiment in this specification is described in a related manner. Each embodiment focuses on the differences from other embodiments, and the same or similar parts between the embodiments can be referenced to each other.

[0116] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the scope of protection of the present disclosure. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present disclosure are included in the scope of protection of the present disclosure.

Claims

1. A display substrate, characterized in that: The display substrate comprises: Backplane layer, pixel layer, cathode layer, thin film encapsulation layer, trapezoidal reflection structure layer, low refractive index layer, high refractive index layer, cover layer; the pixel layer includes a pixel light emitting structure and a pixel definition structure; The pixel layer is arranged on the backplane layer, the cathode layer is arranged on a side of the pixel layer away from the backplane layer, the thin film encapsulation layer is arranged on a side of the cathode layer away from the backplane layer, the trapezoidal reflective structure layer is arranged on a side of the thin film encapsulation layer away from the backplane layer, and the orthographic projection of the trapezoidal reflective structure layer on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the backplane layer; the low-refractive index layer is arranged on a side of the trapezoidal reflective structure layer and the thin film encapsulation layer away from the backplane layer; the high-refractive index layer is arranged on a side of the low-refractive index layer away from the backplane layer; The refractive index of the low-refractive-reflective layer is less than a first refractive-index threshold; the refractive index of the high-refractive-reflective layer is greater than a second refractive-index threshold; and the second refractive-index threshold is greater than the first refractive-index threshold.

2. The display substrate according to claim 1, characterized in that: In a plane perpendicular to the backplane layer, the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures. For each trapezoidal reflective structure, the trapezoidal reflective structure includes a lower base close to the backplane layer and an upper base away from the backplane layer, and the length of the upper base is smaller than the length of the lower base.

3. The display substrate according to claim 1, characterized in that: The refractive index of the low-refractive-reflective layer is in the range of 1.2-1.

5.

4. The display substrate according to claim 1, characterized in that: The refractive index of the high refractive reflective layer is not less than 1.

7.

5. The display substrate according to any one of claims 1 to 4, characterized in that: The difference between the refractive index of the high-refractive-reflective layer and the refractive index of the low-refractive-reflective layer is not less than 0.

3.

6. The display substrate according to claim 5, characterized in that: The low refractive index layer includes SiO2, LiF or MgF2.

7. The display substrate according to claim 1, characterized in that: The pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures; The lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure; Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

8. The display substrate according to claim 7, characterized in that: 1 / 2pitch≤W2≤W1≤W3≤pitch, wherein W1 is the lower base length of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, W2 is the lower base length of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure, W3 is the lower base length of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure, and pitch is the lower base length of the pixel definition structure.

9. The display substrate according to claim 1, characterized in that: The pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures; The bottom angle of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the bottom angle of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not greater than the bottom angle of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure; wherein the two bottom angles of the trapezoidal reflective structure are equal; Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

10. The display substrate according to claim 9, characterized in that: 35°≤θ3≤θ1≤θ2≤80°, wherein θ1 is the angle of the bottom angle of the trapezoidal reflection structure corresponding to the R pixel light-emitting structure, θ2 is the angle of the bottom angle of the trapezoidal reflection structure corresponding to the G pixel light-emitting structure, and θ3 is the angle of the bottom angle of the trapezoidal reflection structure corresponding to the B pixel light-emitting structure.

11. The display substrate according to claim 1, characterized in that: The pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures; The angle of the bottom angle corresponding to the B pixel light-emitting structure is not greater than the angle of the bottom angle corresponding to the R pixel light-emitting structure, and the angle of the bottom angle corresponding to the R pixel light-emitting structure is not greater than the angle of the bottom angle corresponding to the G pixel light-emitting structure; Among them, for each pixel light-emitting structure, the bottom angle corresponding to the pixel light-emitting structure is the second side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the first side of the pixel light-emitting structure in the vertical direction, and the first side bottom angle of the trapezoidal reflective structure corresponding to the pixel definition structure on the second side of the pixel light-emitting structure in the vertical direction, wherein, for each pixel definition structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel definition structure in the vertical direction on the back layer overlaps with the orthographic projection of the pixel definition structure on the back layer.

12. The display substrate according to claim 1, characterized in that: The pixel light-emitting structure includes an R pixel light-emitting structure, a G pixel light-emitting structure, and a B pixel light-emitting structure; wherein the R pixel light-emitting structure emits red light, the G pixel light-emitting structure emits green light, and the B pixel light-emitting structure emits blue light, and the trapezoidal reflective structure layer includes a plurality of trapezoidal reflective structures; The height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, and the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure is not less than the height of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure; Among them, for each pixel light-emitting structure, the orthographic projection of the trapezoidal reflective structure corresponding to the pixel light-emitting structure on the backplane layer overlaps with the orthographic projection of the pixel definition structure on the first side of the pixel light-emitting structure on the backplane layer.

13. The display substrate according to claim 12, characterized in that: 1um≤h2≤h1≤h3≤10um, wherein h1 is the height of the trapezoidal reflective structure corresponding to the R pixel light-emitting structure, h2 is the height of the trapezoidal reflective structure corresponding to the G pixel light-emitting structure, and h3 is the height of the trapezoidal reflective structure corresponding to the B pixel light-emitting structure.

14. A display screen, characterized in that: A display substrate comprising any one of claims 1 to 13.

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