Semiconductor light-emitting device for pixels, and display device comprising same

Abstract

A semiconductor light-emitting device for pixels and a display device comprising same, according to embodiments, comprise: a 1-1 conductive semiconductor layer; a light-emitting structure disposed on the 1-1 conductive semiconductor layer and comprising a 1-2 conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and at least one electrode disposed on the 1-1 conductive semiconductor layer, wherein the side surfaces of the 1-1 conductive semiconductor layer and the light-emitting structure may be inclined in different directions.

Description

Semiconductor light-emitting element for pixels and display device including the same

[0001] The present invention relates to a semiconductor light-emitting element for pixels and a display device including the same.

[0002] Large-area displays include liquid crystal displays (LCDs), OLED displays, and micro-LED displays.

[0003] A micro-LED display is a display that uses micro-LEDs, which are semiconductor light-emitting elements with a diameter or cross-sectional area of ​​100㎛ or less, as display elements.

[0004] Micro-LED displays use semiconductor light-emitting diodes (micro-LEDs) as display elements, so they have superior performance in many characteristics, including contrast ratio, response speed, color reproducibility, viewing angle, brightness, resolution, lifespan, luminous efficiency, and brightness.

[0005] In particular, micro-LED displays have the advantage of being able to freely adjust the size and resolution by separating and combining the screen in a modular manner, and of being able to implement a flexible display.

[0006]

[0007] However, large-scale micro-LED displays require millions or more micro-LEDs, which poses a technical challenge in quickly and accurately transferring micro-LEDs to the display panel.

[0008] Recently developed transfer technologies include the pick and place process, the laser lift-off method, and the self-assembly method.

[0009] Among these, the self-assembly method is advantageous for implementing large-screen display devices, as it is a method in which semiconductor light-emitting elements find their own assembly positions within a fluid.

[0010] Recently, U.S. Patent No. 9,825,202 presented a micro-LED structure suitable for self-assembly, but research on the technology for manufacturing displays through self-assembly of micro-LEDs is still insufficient.

[0011] In particular, in the case of rapidly transferring millions or more semiconductor light-emitting elements to a large display in the prior art, although the transfer speed can be improved, there is a technical problem in that the transfer error rate can increase, resulting in a lower transfer yield.

[0012] Meanwhile, a self-assembly transfer process using dielectrophoresis (DEP) is being attempted in related technologies, but there is a problem of low self-assembly rate due to non-uniformity of DEP force.

[0013] In addition, there is a problem that the assembly rate and positioning precision are reduced because the inclination of the assembly hole and the inclination of the semiconductor light-emitting element are different in opposite directions during the process of self-assembling the semiconductor light-emitting element into the assembly hole.

[0014] One of the technical challenges of the embodiment is to prevent misassembly and defective assembly when assembling a semiconductor light-emitting element into a display device.

[0015] In addition, one of the technical challenges of the embodiment is to improve the assembly rate and positioning precision during self-assembly of semiconductor light-emitting devices.

[0016] In addition, one of the technical challenges of the embodiment is to improve the light distribution of a semiconductor light-emitting device to enhance light efficiency.

[0017] In addition, one of the technical challenges of the embodiment is to improve the degree of freedom in designing the size and location of electrodes for electrical connection with contact electrodes in horizontal semiconductor light-emitting devices.

[0018] In addition, one of the technical challenges of the embodiment is to secure ease of contact electrode process for electrical connection with semiconductor light-emitting devices and to improve reliability of the contact electrode.

[0019] In addition, one of the technical challenges of the embodiment is to prevent defective assembly such as color mixing or double assembly regardless of the semiconductor epitaxial material constituting the semiconductor light-emitting device.

[0020] The technical tasks of the embodiment are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0021] A semiconductor light-emitting device for pixels according to an embodiment comprises: a first conductive semiconductor layer; a light-emitting structure disposed on the first conductive semiconductor layer, the light-emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and at least one electrode disposed on the first conductive semiconductor layer; wherein side surfaces of the first conductive semiconductor layer and the light-emitting structure may have different inclination directions.

[0022] In addition, in the embodiment, the slope of the side surface of the 1-1 conductive semiconductor layer and the slope of the side surface of the light-emitting structure may have a positive (+) slope and a negative (-) slope, respectively, with respect to the upper surface of the 1-1 conductive semiconductor layer.

[0023] Additionally, in the embodiment, the angle between the lower surface and the side surface of the 1-1 conductive semiconductor layer may be an obtuse angle, and the angle between the upper surface and the side surface of the 1-1 conductive semiconductor layer may be an acute angle.

[0024] Additionally, in the embodiment, the length of the upper surface of the 1-1 conductive semiconductor layer may be longer than the length of the lower surface.

[0025] Additionally, the embodiment may further include a reflective film disposed on a side or bottom surface of the first-first conductive semiconductor layer.

[0026] Additionally, in the embodiment, the light-emitting structure may be arranged to be offset to one side based on the center of the first-first conductive semiconductor layer.

[0027]

[0028] In addition, a display device including a semiconductor light-emitting element for pixels according to an embodiment includes a substrate; an assembly partition wall disposed on the substrate and having an assembly hole; and a semiconductor light-emitting element disposed within the assembly hole, wherein the semiconductor light-emitting element may include a semiconductor light-emitting element for pixels according to any one of claims 1 to 6.

[0029] Additionally, in the embodiment, the facing side surfaces of the first-first conductive semiconductor layer and the assembly barrier may have corresponding inclinations.

[0030] Additionally, in the embodiment, the distance between the lower end of the 1-1 conductive semiconductor layer and the assembly barrier may correspond to the distance between the lower end of the 1-1 conductive semiconductor layer and the assembly barrier.

[0031] Additionally, in the embodiment, the facing side surfaces of the first-first conductive semiconductor layer and the assembly barrier may have parallel inclinations.

[0032] Additionally, in the embodiment, the distance between the lower end of the 1-1 conductive semiconductor layer and the assembly barrier may be the same as the distance between the lower end of the 1-1 conductive semiconductor layer and the assembly barrier.

[0033] A semiconductor light-emitting element for pixels according to an embodiment and a display device including the same have a technical effect of improving the correct assembly rate during self-assembly.

[0034] For example, the embodiment can prevent defective assembly such as double assembly or non-assembly and improve the correct assembly rate by forming the slope of one side of the 1-1 challenge type semiconductor layer and the assembly barrier to correspond to each other.

[0035] In addition, the embodiment has a technical effect that can improve the degree of freedom in designing the size and position of electrodes for electrical connection with contact electrodes in a horizontal semiconductor light-emitting device.

[0036] For example, in the embodiment, since the side surfaces of the light-emitting structure and the 1-1 conductive semiconductor layer are formed in different inclination directions, the upper surface of the 1-1 conductive semiconductor layer is longer than the lower surface, and the degree of freedom in design, such as the size and position of the electrode located on the upper surface, can be improved.

[0037] In addition, the embodiment has a technical effect of ensuring the ease of a contact electrode process for electrical connection with a semiconductor light-emitting device and improving the reliability of the contact electrode.

[0038] For example, the embodiment can secure the area of ​​the upper surface of the first-first conductive semiconductor layer in a semiconductor light-emitting device having a heterogeneous slope structure, thereby sufficiently securing the area of ​​the electrode, improving the error of the contact electrode process, and enhancing reliability.

[0039] In addition, the embodiment has a technical effect of improving light distribution of a semiconductor light-emitting device, thereby enhancing light efficiency.

[0040] In addition, the embodiment has a technical effect of improving light extraction at the center of a semiconductor light-emitting device, thereby improving deviation according to a wide viewing angle.

[0041] For example, the embodiment can improve light distribution through a heterogeneous slope structure in a semiconductor light-emitting device and improve light extraction efficiency in the upward direction by arranging a reflective film on the side and bottom of the first-first conductive semiconductor layer.

[0042] In addition, the embodiment has a technical effect of preventing defective assembly such as mixed color or double assembly by designing the gap between the chip and the partition wall to be constant regardless of the semiconductor epitaxial material constituting the semiconductor light-emitting element.

[0043] For example, the embodiment can prevent a decrease in the assembly rate by preventing color mixing and double assembly by matching the gap between the chip and the partition wall even if the semiconductor epitaxial materials constituting the semiconductor light-emitting element are different.

[0044] The technical effects of the embodiments are not limited to those described in this article, but include those that can be understood through the description of the invention.

[0045] Figure 1 is an exemplary diagram of a living room of a house in which a display device according to an embodiment is placed.

[0046] Figure 2 is a block diagram schematically showing a display device according to an embodiment.

[0047] Fig. 3 is a circuit diagram showing an example of a pixel of Fig. 2.

[0048] Fig. 4 is an enlarged view of the first panel area in the display device of Fig. 1.

[0049] Fig. 5 is a cross-sectional view along line B1-B2 of area A2 of Fig. 4.

[0050] Fig. 6 is an exemplary diagram showing a light-emitting element according to an embodiment being assembled on a substrate by a self-assembly method.

[0051] Figures 7a and 7b are conceptual diagrams of a display device in which a semiconductor light-emitting element being studied is assembled internally.

[0052] Fig. 8 is a cross-sectional view of a semiconductor light-emitting element for pixels according to the first embodiment.

[0053] Fig. 9 is a cross-sectional view of a semiconductor light-emitting element for pixels according to the second embodiment.

[0054] Fig. 10 is a conceptual diagram of a display device including a pixel semiconductor light-emitting element according to a third embodiment.

[0055] Fig. 11 is a conceptual diagram of a pixel semiconductor light-emitting element according to the fourth embodiment.

[0056] Fig. 12 is a conceptual diagram of a display device including a pixel semiconductor light-emitting element according to the fifth embodiment.

[0057] Hereinafter, embodiments disclosed in the present specification will be described in detail with reference to the attached drawings. The suffixes "module" and "part" used in the following description for components are given or used interchangeably for the sake of ease of writing the specification, and do not in themselves have distinct meanings or roles. In addition, the attached drawings are intended to facilitate easy understanding of the embodiments disclosed in the present specification, and the technical ideas disclosed in the present specification are not limited by the attached drawings. In addition, when an element such as a layer, region, or substrate is referred to as existing "on" another element, this includes that it may be directly on the other element, or that other intermediate elements may exist therebetween.

[0058] The display devices described in this specification may include digital TVs, mobile phones, smart phones, laptop computers, digital broadcasting terminals, personal digital assistants (PDAs), portable multimedia players (PMPs), navigation devices, slate PCs, tablet PCs, Ultra-Books, desktop computers, and the like. However, the configuration according to the embodiments described in this specification may also be applied to devices capable of displaying, even if they are new product types developed in the future.

[0059]

[0060] A light-emitting element and a display device including the same according to the following embodiment are described.

[0061] FIG. 1 illustrates a living room of a house in which a display device (100) according to an embodiment is placed.

[0062] The display device (100) of the embodiment can display the status of various electronic products such as a washing machine (101), a robot vacuum cleaner (102), and an air purifier (103), and can communicate with each electronic product based on IOT and control each electronic product based on user setting data.

[0063] A display device (100) according to an embodiment may include a flexible display manufactured on a thin and flexible substrate. The flexible display can be bent or rolled like paper while maintaining the characteristics of a conventional flat panel display.

[0064] In a flexible display, visual information can be realized by independently controlling the emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a single color. The unit pixels of a flexible display can be realized by light-emitting elements. In an embodiment, the light-emitting elements may be micro-LEDs or nano-LEDs, but are not limited thereto.

[0065]

[0066] FIG. 2 is a block diagram schematically showing a display device according to an embodiment, and FIG. 3 is a circuit diagram showing an example of a pixel of FIG. 2.

[0067] Referring to FIGS. 2 and 3, a display device according to an embodiment may include a display panel (10), a driving circuit (20), a scan driving unit (30), and a power supply circuit (50).

[0068] The display device (100) of the embodiment can drive a light-emitting element using an active matrix (AM) method or a passive matrix (PM) method.

[0069] The driving circuit (20) may include a data driving unit (21) and a timing control unit (22).

[0070] The display panel (10) can be divided into a display area (DA) and a non-display area (NDA) arranged around the display area (DA). The display area (DA) is an area where pixels (PX) are formed to display an image. The display panel (10) can include data lines (D1 to Dm, m is an integer greater than or equal to 2), scan lines (S1 to Sn, n is an integer greater than or equal to 2) intersecting the data lines (D1 to Dm), a high-potential voltage line to which a high-potential voltage is supplied, a low-potential voltage line to which a low-potential voltage is supplied, and pixels (PX) connected to the data lines (D1 to Dm) and the scan lines (S1 to Sn).

[0071] Each of the pixels (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). The first sub-pixel (PX1) may emit a first color light of a first wavelength, the second sub-pixel (PX2) may emit a second color light of a second wavelength, and the third sub-pixel (PX3) may emit a third color light of a third wavelength. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but the present invention is not limited thereto. In addition, although FIG. 2 illustrates that each of the pixels (PX) includes three sub-pixels, the present invention is not limited thereto. That is, each of the pixels (PX) may include four or more sub-pixels.

[0072] Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may be connected to at least one of the data lines (D1 to Dm), at least one of the scan lines (S1 to Sn), and a high-potential voltage line. The first sub-pixel (PX1) may include light-emitting elements (LD), a plurality of transistors for supplying current to the light-emitting elements (LD), and at least one capacitor (Cst), as shown in FIG. 3.

[0073] Although not shown in the drawing, each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include only one light emitting element (LD) and at least one capacitor (Cst).

[0074] Each of the light emitting elements (LDs) may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers, and a second electrode. Here, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but this is not limited thereto.

[0075] Referring to FIG. 3, a plurality of transistors may include a driving transistor (DT) that supplies current to light-emitting elements (LD), and a scan transistor (ST) that supplies a data voltage to a gate electrode of the driving transistor (DT). The driving transistor (DT) may include a gate electrode connected to a source electrode of the scan transistor (ST), a source electrode connected to a high-potential voltage line to which a high-potential voltage is applied, and a drain electrode connected to first electrodes of the light-emitting elements (LD). The scan transistor (ST) may include a gate electrode connected to a scan line (Sk, where k is an integer satisfying 1 ≤ k ≤ n), a source electrode connected to the gate electrode of the driving transistor (DT), and a drain electrode connected to a data line (Dj, where j is an integer satisfying 1 ≤ j ≤ m).

[0076] A capacitor (Cst) is formed between the gate electrode and the source electrode of the driving transistor (DT). The storage capacitor (Cst) can charge the difference between the gate voltage and the source voltage of the driving transistor (DT).

[0077] The driving transistor (DT) and the scan transistor (ST) may be formed as thin film transistors. In addition, although FIG. 3 mainly describes the driving transistor (DT) and the scan transistor (ST) as being formed as P-type MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), the present invention is not limited thereto. The driving transistor (DT) and the scan transistor (ST) may also be formed as N-type MOSFETs. In this case, the positions of the source electrodes and drain electrodes of each of the driving transistor (DT) and the scan transistor (ST) may be changed.

[0078] In addition, although FIG. 3 illustrates that each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) includes a 2T1C (2 Transistor - 1 capacitor) having one driving transistor (DT), one scan transistor (ST), and one capacitor (Cst), the present invention is not limited thereto. Each of the first sub-pixel (PX1), the second sub-pixel (PX2), and the third sub-pixel (PX3) may include a plurality of scan transistors (ST) and a plurality of capacitors (Cst).

[0079]

[0080] Referring again to FIG. 2, the driving circuit (20) outputs signals and voltages for driving the display panel (10). For this purpose, the driving circuit (20) may include a data driving unit (21) and a timing control unit (22).

[0081] The data driving unit (21) receives digital video data (DATA) and a source control signal (DCS) from the timing control unit (22). The data driving unit (21) converts digital video data (DATA) into analog data voltages according to the source control signal (DCS) and supplies the converted data to the data lines (D1 to Dm) of the display panel (10).

[0082] The timing control unit (22) receives digital video data (DATA) and timing signals from the host system. The timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock. The host system may be an application processor of a smartphone or tablet PC, a monitor, a system-on-chip of a TV, etc.

[0083] The scan driving unit (30) receives a scan control signal (SCS) from the timing control unit (22). The scan driving unit (30) generates scan signals according to the scan control signal (SCS) and supplies them to the scan lines (S1 to Sn) of the display panel (10). The scan driving unit (30) may include a plurality of transistors and may be formed in a non-display area (NDA) of the display panel (10). Alternatively, the scan driving unit (30) may be formed as an integrated circuit, in which case it may be mounted on a gate flexible film attached to the other side of the display panel (10).

[0084] The power supply circuit (50) can generate a high-potential voltage (VDD) and a low-potential voltage (VSS) for driving light-emitting elements (LD) of the display panel (10) from the main power supply and supply them to the high-potential voltage line and the low-potential voltage line of the display panel (10). In addition, the power supply circuit (50) can generate and supply driving voltages for driving the driving circuit (20) and the scan driving unit (30) from the main power supply.

[0085]

[0086] Figure 4 is an enlarged view of the first panel area (A1) in the display device of Figure 1.

[0087] According to FIG. 4, the display device (100) of the embodiment can be manufactured by mechanically and electrically connecting a plurality of panel areas, such as the first panel area (A1), through tiling.

[0088] The first panel area (A1) may include a plurality of light-emitting elements (150) arranged for each unit pixel (PX in FIG. 2).

[0089] For example, a unit pixel (PX) may include a first sub-pixel (PX1), a second sub-pixel (PX2), and a third sub-pixel (PX3). For example, a plurality of red light-emitting elements (150R) may be arranged in the first sub-pixel (PX1), a plurality of green light-emitting elements (150G) may be arranged in the second sub-pixel (PX2), and a plurality of blue light-emitting elements (150B) may be arranged in the third sub-pixel (PX3). The unit pixel (PX) may further include a fourth sub-pixel in which no light-emitting element is arranged, but this is not limited thereto. Meanwhile, the light-emitting element (150) may be a semiconductor light-emitting element.

[0090]

[0091] Next, Fig. 5 is a cross-sectional view along line B1-B2 of area A2 of Fig. 4.

[0092] Referring to FIG. 5, the display device (100) of the embodiment may include a substrate (200), assembly wiring (201, 202), a first insulating layer (211a), a second insulating layer (211b), a third insulating layer (206), and a plurality of light-emitting elements (150).

[0093] The assembly wiring may include a first assembly wiring (201) and a second assembly wiring (202) that are spaced apart from each other. The first assembly wiring (201) and the second assembly wiring (202) may be provided to generate a dielectrophoretic force for assembling the light emitting element (150). In addition, the first assembly wiring (201) and the second assembly wiring (202) may be electrically connected to electrodes of the light emitting element to function as electrodes of the display panel.

[0094] The assembly wiring (201, 202) may be formed of a light-transmitting electrode (ITO) or may include a metal material with excellent electrical conductivity. For example, the assembly wiring (201, 202) may be formed of at least one of titanium (Ti), chromium (Cr), nickel (Ni), aluminum (Al), platinum (Pt), gold (Au), tungsten (W), molybdenum (Mo), or an alloy thereof.

[0095] A first insulating layer (211a) may be disposed between the first assembly wiring (201) and the second assembly wiring (202), and a second insulating layer (211b) may be disposed on the first assembly wiring (201) and the second assembly wiring (202). The first insulating layer (211a) and the second insulating layer (211b) may be an oxide film, a nitride film, or the like, but are not limited thereto.

[0096]

[0097] The light-emitting element (150) may include a red light-emitting element (150), a green light-emitting element (150G), and a blue light-emitting element (150B0) to form a unit pixel (sub-pixel), but is not limited thereto, and may also include a red phosphor and a green phosphor to implement red and green, respectively.

[0098] The substrate (200) may be formed of glass or polyimide. In addition, the substrate (200) may include a flexible material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). In addition, the substrate (200) may be a transparent material, but is not limited thereto.

[0099] The third insulating layer (206) may include an insulating and flexible material such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0100] The third insulating layer (206) may be a conductive adhesive layer having adhesive properties and conductivity, and the conductive adhesive layer may be flexible to enable a flexible function of the display device. For example, the third insulating layer (206) may be a conductive adhesive layer such as an anisotropic conductive film (ACF) or an anisotropic conductive medium, a solution containing conductive particles, etc. The conductive adhesive layer may be a layer that is electrically conductive in a direction vertical to the thickness, but electrically insulating in a direction horizontal to the thickness.

[0101] The third insulating layer (206) may include an assembly hole (203) into which a light-emitting element (150) is inserted (see FIG. 6). Therefore, during self-assembly, the light-emitting element (150) can be easily inserted into the assembly hole (203) of the third insulating layer (206). The assembly hole (203) may be referred to as an insertion hole, a fixing hole, an alignment hole, or the like.

[0102] The gap between the assembly wiring (201, 202) is formed to be smaller than the width of the light emitting element (150) and the width of the assembly hole (203), so that the assembly position of the light emitting element (150) can be fixed more precisely using an electric field.

[0103] A third insulating layer (206) is formed on the assembly wiring (201, 202) to protect the assembly wiring (201, 202) from the fluid (1200) and prevent leakage of current flowing in the assembly wiring (201, 202). The third insulating layer (206) may be formed as a single layer or multiple layers of an inorganic insulator such as silica or alumina or an organic insulator.

[0104] Additionally, the third insulating layer (206) may include an insulating and flexible material such as polyimide, PEN, PET, etc., and may be formed integrally with the substrate (200) to form a single substrate.

[0105] The third insulating layer (206) may be an adhesive insulating layer or a conductive adhesive layer having conductivity. The third insulating layer (206) may be flexible, thereby enabling a flexible function of the display device.

[0106] The third insulating layer (206) has a partition wall, and an assembly hole (203) can be formed by this partition wall. For example, when forming the substrate (200), a part of the third insulating layer (206) is removed, so that each of the light emitting elements (150) can be assembled into the assembly hole (203) of the third insulating layer (206).

[0107] An assembly hole (203) is formed in the substrate (200) to which light-emitting elements (150) are coupled, and the surface where the assembly hole (203) is formed can come into contact with a fluid (1200). The assembly hole (203) can guide the exact assembly position of the light-emitting elements (150).

[0108] Meanwhile, the assembly hole (203) may have a shape and size corresponding to the shape of the light-emitting element (150) to be assembled at the corresponding position. Accordingly, it is possible to prevent another light-emitting element from being assembled in the assembly hole (203) or multiple light-emitting elements from being assembled.

[0109]

[0110] FIG. 6 is a drawing showing an example in which a light-emitting element according to an embodiment is assembled on a substrate by a self-assembly method, and the self-assembly method of the light-emitting element is explained with reference to the drawings.

[0111] The substrate (200) may be a panel substrate of a display device. In the following description, the substrate (200) is described as a panel substrate of a display device, but the embodiment is not limited thereto.

[0112] Referring to FIG. 6, a plurality of light-emitting elements (150) may be placed in a chamber (1300) filled with a fluid (1200). The fluid (1200) may be, but is not limited to, water such as ultrapure water. The chamber may be referred to as a tank, a container, a vessel, or the like.

[0113] After this, the substrate (200) can be placed on the chamber (1300). Depending on the embodiment, the substrate (200) can also be introduced into the chamber (1300).

[0114] As shown in FIG. 5, a pair of assembly wirings (201, 202) corresponding to each light emitting element (150) to be assembled can be arranged on the substrate (200).

[0115] Referring to FIG. 6, after the substrate (200) is placed, an assembly device (1100) including a magnetic body can move along the substrate (200). For example, a magnet or an electromagnet can be used as the magnetic body. The assembly device (1100) can move in contact with the substrate (200) to maximize the area affected by the magnetic field within the fluid (1200). Depending on the embodiment, the assembly device (1100) may include a plurality of magnetic bodies or may include magnetic bodies of a size corresponding to that of the substrate (200). In this case, the movement distance of the assembly device (1100) may be limited within a predetermined range.

[0116] By the magnetic field generated by the assembly device (1100), the light emitting element (150) within the chamber (1300) can move toward the assembly device (1100).

[0117] The light emitting element (150) may move toward the assembly device (1100) and enter the assembly hole (203) by the dielectric electrophoretic force (DEP force) to come into contact with the substrate (200).

[0118] Specifically, the assembly wiring (201, 202) forms an electric field by an externally supplied power source, and a dielectric force can be formed between the assembly wiring (201, 202) by this electric field. The light-emitting element (150) can be fixed to the assembly hole (203) on the substrate (200) by this dielectric force.

[0119] The light emitting element (150) in contact with the substrate (200) can be prevented from being detached by the movement of the assembly device (1100) due to the electric field applied by the assembly wiring (201, 202) formed on the substrate (200). According to an embodiment, the time required for each of the light emitting elements (150) to be assembled on the substrate (200) can be drastically shortened by the self-assembly method using the electromagnetic field described above, so that a large-area, high-pixel display can be implemented more quickly and economically.

[0120] At this time, a predetermined solder layer (not shown) is formed between the light-emitting element (150) assembled on the assembly hole (203) of the substrate (200) and the assembly electrode, thereby improving the bonding strength of the light-emitting element (150).

[0121] Next, a molding layer (not shown) may be formed in the assembly hole (203) of the substrate (200). The molding layer may be a light-transmitting resin or a resin containing a reflective material or a scattering material.

[0122]

[0123] Figures 7a and 7b are conceptual diagrams of a display device in which a semiconductor light-emitting element being studied is assembled internally.

[0124] Referring to FIG. 7a, the semiconductor light-emitting device (50) may include a first-first conductive semiconductor layer (58a) and a light-emitting structure (58b). When forming the semiconductor light-emitting device (50), the first-first conductive semiconductor layer (58a) and the light-emitting structure (58b) may have inclinations in the same direction due to mesa etching. In detail, the side surfaces of the first-first conductive semiconductor layer (58a) and the light-emitting structure (58b) may have inclinations in the same direction with respect to the vertical. In addition, the angle (A1) between the lower surface and the side surface of the first-first conductive semiconductor layer (58a) may be an acute angle, and the angle (B1) between the upper surface and the side surface of the first-first conductive semiconductor layer (58a) may be an obtuse angle. In addition, due to the inclination of the 1-1 conductive semiconductor layer (58a), the length (L1) of the upper surface of the 1-1 conductive semiconductor layer (58a) may be shorter than the length (L2) of the lower surface. A partition wall (20) having an assembly hole (60H) may be arranged on the substrate (10). The distance (L3) between the partition walls (20) may be greater than the maximum width of the semiconductor light-emitting element (50).

[0125]

[0126] Meanwhile, during self-assembly, the semiconductor light-emitting element (50) can be assembled on the substrate (10) so that the lower surface of the 1-1 conductive semiconductor layer (58a) is in contact with the substrate (10). However, since the side slope of the assembly hole (60H) or the partition wall (20) has an inclination opposite to the side slope of the semiconductor light-emitting element (50), the distance between the upper end of the 1-1 conductive semiconductor layer (58a) and the partition wall (20) becomes smaller than the distance between the lower end of the 1-1 conductive semiconductor layer (58a) and the partition wall (20).

[0127] Accordingly, when a semiconductor light-emitting element (50) is assembled within an assembly hole (60H), there is a problem that the assembly rate and positional accuracy are reduced due to a small allowance. In addition, since the lower length (L2) of the first-first conductive semiconductor layer (58a) entering the assembly hole (60H) first is longer than the upper length (L1), there is a problem that a part of the lower part may collide with the partition wall (20), resulting in non-assembly or defective assembly.

[0128] Meanwhile, when a semiconductor light-emitting device is assembled in an assembly hole, the length of the lower surface of the semiconductor light-emitting device must be shorter than the length of the lower surface of the assembly hole. However, since the length (L1) of the upper surface of the 1-1 conductive semiconductor layer (58a) is shorter than the length (L2) of the lower surface, the size of the semiconductor light-emitting device (50) is formed small, and there is a problem that the size and position of the electrode are also restricted in the design.

[0129] In addition, in the process of electrically connecting the semiconductor light-emitting element to the display panel, since the distance between the barrier rib (20) and the upper end of the first-first conductive semiconductor layer (58a) is far and the gap is large, the insulating layer (40) formed in the gap is formed unevenly, and the contact electrode (30) connected to the first electrode (55) along the insulating layer (40) may be positioned unstably. In addition, the distance between the barrier rib (20) and the first electrode (55) becomes long, so the length of the contact electrode (30) becomes long, which may become a factor that lowers the reliability of the electrode. Accordingly, the reliability of the contact electrode (30) may decrease or an issue may occur in the electrical connection, resulting in problems such as defective lighting.

[0130]

[0131] Next, referring to FIG. 7b, each of the semiconductor light-emitting elements emitting R, G, and B colors may have different lateral slopes of the 1-1 conductive semiconductor layer (58a). In particular, since the semiconductor light-emitting elements (50a) emitting green and blue colors use epitaxial materials of the same composition and thus the mesa etching process may be the same, the slopes of the 1-1 conductive semiconductor layers (58a) may be the same.

[0132] On the other hand, since the semiconductor light-emitting element (50b) emitting red color uses an epitaxial material having a different composition from the green and blue colors, the lateral slope of the first-first conductive semiconductor layer (58) may be different. Since the semiconductor light-emitting elements (50a, 50b) assembled in the same assembly hole have different slopes, the spacing with respect to the partition wall (20) is different, which may interfere with proper assembly and cause defects such as color mixing and double assembly.

[0133]

[0134] Hereinafter, an embodiment for solving the above problem will be described.

[0135] Fig. 8 is a cross-sectional view of a pixel semiconductor light-emitting device according to the first embodiment. Referring to Fig. 8, the pixel semiconductor light-emitting device (150) of the first embodiment may include a first conductive semiconductor layer (151a) and a light-emitting structure (158b). The first conductive semiconductor layer (151a) may include a first-first conductive semiconductor layer (158a) and a first-second conductive semiconductor layer (151). In addition, the light-emitting structure (158b) may include a first-second conductive semiconductor layer (151), an active layer (152), and a second conductive semiconductor layer (153).

[0136] Additionally, at least one electrode (155) may be placed on the first-first conductive semiconductor layer (158a). The electrode (155) may be connected to a contact electrode after the panel process to supply an electrical signal to the semiconductor light-emitting element.

[0137] The above semiconductor light-emitting element (150) may be a horizontal semiconductor, but is not limited thereto.

[0138] The first conductive semiconductor layer (151a) may be an n-type semiconductor layer, and the second conductive semiconductor layer (153) may be a p-type semiconductor layer, but is not limited thereto. The first conductive semiconductor layer (151a), the active layer (152), and the second conductive semiconductor layer (153) may be formed of a compound semiconductor material. For example, the compound semiconductor material may be a group III-V compound semiconductor material, a group II-VI compound material, etc. For example, the compound semiconductor may be a binary compound selected from the group consisting of GaP, GaAs, GaSb, AlP, AlAs, AlSb, InP, InAs, InSb, and mixtures thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlInP, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and a group consisting of four-element compounds selected from the group consisting of AlGaInP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and mixtures thereof.

[0139] For example, the first conductive semiconductor layer (151a) may include a first conductive dopant, and the second conductive semiconductor layer (153) may include a second conductive dopant. For example, the first conductive dopant may be an n-type dopant such as silicon (Si), and the second conductive dopant may be a p-type dopant such as boron (B).

[0140] The active layer (152) is a region that generates light, and can generate light having a specific wavelength band depending on the material properties of the compound semiconductor. In addition, the active layer may have a multiple quantum well or single quantum well structure, and the wavelength band may be determined by the energy band gap of the compound semiconductor included in the active layer. Therefore, the semiconductor light-emitting device of the embodiment can generate UV light, blue light, green light, and red light depending on the energy band gap of the compound semiconductor included in the active layer.

[0141]

[0142] Meanwhile, the semiconductor light-emitting device (150) may include a first-first conductive semiconductor layer (158a) and a light-emitting structure (158b) disposed on the first-first conductive semiconductor layer (158a). The side slope of the first-first conductive semiconductor layer (158a) may have different directions with respect to the vertical side slope of the light-emitting structure (158b).

[0143] In detail, the angle (A2) between the lower surface and the side surface of the 1-1 conductive semiconductor layer (158a) may be an obtuse angle, and the angle (B2) between the upper surface and the side surface of the 1-1 conductive semiconductor layer (158a) may be an acute angle. The length of the upper surface of the 1-1 conductive semiconductor layer (158a) may be greater than the length of the lower surface.

[0144] Additionally, in the case of the light-emitting structure (158b), the angle between the lower surface and the side surface may be an acute angle, and the angle between the upper surface and the side surface may be an obtuse angle. Additionally, the length of the lower surface of the light-emitting structure (158b) may be greater than the length of the upper surface.

[0145] Therefore, in the semiconductor light-emitting device for pixels according to the first embodiment, the side surfaces of the 1-1 conductive semiconductor layer and the light-emitting structure may have different inclinations with respect to the vertical. In detail, the side surfaces of the 1-1 conductive semiconductor layer (158a) and the light-emitting structure (158b) may have negative and positive inclinations with respect to the vertical, respectively. In addition, the inclination of the side surface of the 1-1 conductive semiconductor layer (158a) and the inclination of the side surface of the light-emitting structure (158b) may have a positive (+) inclination and a negative (-) inclination, respectively, with respect to the upper surface of the 1-1 conductive semiconductor layer (158a).

[0146] In addition, the upper surface of the first-first challenge type semiconductor layer (158a) may be a polygon including a circle, an ellipse, and a square, but is not limited thereto.

[0147]

[0148] Fig. 9 is a cross-sectional view of a semiconductor light-emitting element for pixels according to a second embodiment. Referring to Fig. 9, the second embodiment may adopt the technical features of the first embodiment. For example, the upper surface of the first-first conductive semiconductor layer (158a) may have a longer length than the lower surface, and the inclinations of the second mesa and the side surfaces of the first-first conductive semiconductor layer may be in opposite directions relative to the vertical. Next, the technical features of the second embodiment will be described.

[0149] Referring to Fig. 9, the pixel semiconductor light-emitting element (150a) of the second embodiment may include a 1-1 conductive semiconductor layer (158a) and a light-emitting structure (158b). In this case, the light-emitting structure (158b) may be arranged offset to one side from the center of the 1-1 conductive semiconductor layer (158b).

[0150] Additionally, a first reflective film (170a) may be disposed on the lower surface of the first-first conductive semiconductor layer (158a). The first reflective film (170a) may reflect light directed toward the lower portion of the chip upward, thereby minimizing light loss and improving light efficiency.

[0151] In addition, a second reflective film (170b) may be disposed on the side surface of the first-first conductive semiconductor layer (158a). The second reflective film (170b) may reflect light directed toward the side surface of the chip upward, thereby minimizing light loss and improving light efficiency. The slope of the second reflective film (170b) may correspond to the side surface slope of the first-first conductive semiconductor layer (158a).

[0152] In the second embodiment, at least one of the first reflective film (170a) and the second reflective film (170b) may be disposed. When the reflective film (170) is disposed on both the lower surface and the side surface of the first-first conductive semiconductor layer (158a), there is a technical effect of improving light distribution and further enhancing light efficiency. In addition, there is a technical effect of improving light extraction efficiency toward the center of the semiconductor light-emitting element (150), thereby improving deviation according to the optical viewing angle.

[0153] In addition, when a reflective film (170) is formed on the first-first conductive semiconductor layer (158), there is a technical effect of simplifying the design by eliminating the need to use a reflective film on the display panel substrate. In addition, although not shown in Fig. 9, an assembly metal for self-assembly may be placed on the lower portion of the semiconductor light-emitting element (150).

[0154] Therefore, the second embodiment has a technical effect of improving light distribution through a heterogeneous slope structure in a semiconductor light-emitting device and further improving light extraction efficiency in the upward direction by arranging a reflective film on the side and bottom of the first-first conductive semiconductor layer.

[0155]

[0156] Fig. 10 is a conceptual diagram of a display device including a semiconductor light-emitting element according to a third embodiment. In the third embodiment, the semiconductor light-emitting element may include a pixel semiconductor light-emitting element according to the first and second embodiments.

[0157] Referring to Fig. 10, a semiconductor light emitting element (150) can be assembled on a substrate (110). Although not shown in Fig. 10, the substrate (110) may include a thin film transistor, an insulating layer, an assembly electrode, an adhesive layer, etc.

[0158] A partition wall (120) may be arranged spaced apart from each other on the substrate (110). The partition walls (120) may be spaced apart to have a minimum distance of D3. In addition, the partition wall (120) may be provided with an assembly hole (160H). The length of the lower surface of the assembly hole (160H) may be D3. A semiconductor light emitting element (150) may be arranged within the assembly hole (160H).

[0159] The semiconductor light-emitting device (150) may include a first-first conductive semiconductor layer (158a) and a light-emitting structure (158b). At this time, the length (D1) of the upper surface of the first-first conductive semiconductor layer (158a) may be longer than the length (D2) of the lower surface. In addition, the length (D2) of the lower surface of the first-first conductive semiconductor layer (158a) may be shorter than the shortest distance (D3) between the partition walls. In addition, the length (D1) of the upper surface of the first-first conductive semiconductor layer (158a) may be longer than the shortest distance (D3) between the partition walls.

[0160] In addition, the slope of the side surface of the 1-1 conductive semiconductor layer (158a) and the slope of the side surface of the light-emitting structure (158b) may have a positive (+) slope and a negative (-) slope, respectively, based on the upper surface of the 1-1 conductive semiconductor layer (158a).

[0161] In addition, the slope of the side surface of the 1-1 conductive semiconductor layer (158a) may have the same direction as the slope of the side surface of the partition wall (120) with respect to the vertical. The slope of the side surface of the 1-1 conductive semiconductor layer (158a) may correspond to the slope of the facing surface of the partition wall (120). In addition, the gap between the 1-1 conductive semiconductor layer (158a) and the inner wall of the assembly hole (160H) may have a predetermined distance. The gap between the lower surface of the 1-1 conductive semiconductor layer (158a) and the partition wall (120) may correspond to the gap between the upper surface of the 1-1 conductive semiconductor layer (158a) and the partition wall (120). In addition, the facing side surfaces of the partition wall (120) and the 1-1 conductive semiconductor layer (158a) may be parallel to each other.

[0162] Meanwhile, for assembly, the length (D3) of the lower surface of the semiconductor light-emitting element (150) may be smaller than the length of the lower surface of the assembly hole (160H). On the other hand, the first-first conductive semiconductor layer (158a) of the semiconductor light-emitting element (150) may have the same directionality as the inclination of the assembly hole (160H).

[0163] Accordingly, the third embodiment can minimize the gap between the semiconductor light-emitting element (150) and the assembly partition wall (120).

[0164] In addition, the length (D1) of the upper surface of the first-first conductive semiconductor layer (158a) may be greater than the length (D2) of the lower surface. Accordingly, the third embodiment has a technical effect in that the semiconductor light-emitting element (150) has improved design freedom in terms of the size and position of the electrode within the assembly hole (160H).

[0165] In addition, the third embodiment has a special technical effect in that the slopes of the sides of the 1-1 conductive semiconductor layer and the light-emitting structure have positive (+) and negative (-) slopes, respectively, with respect to the upper surface of the 1-1 conductive semiconductor layer, and the slope of the 1-1 conductive semiconductor layer has the same direction as the slope of the inner wall of the assembly hole, thereby preventing assembly defects such as non-assembly and double assembly, improving the assembly rate, and enhancing the precision of the assembly position.

[0166]

[0167] Fig. 11 is a conceptual diagram of a display device including a pixel semiconductor light-emitting element according to a fourth embodiment. The fourth embodiment can adopt the technical features of the third embodiment. For example, the fourth embodiment has the technical effect of improving the assembly rate and positional accuracy during assembly, as the inclination directions of the 1-1 conductive semiconductor layer and the light-emitting structure are different, and the side inclination of the 1-1 conductive semiconductor layer is in the same direction as the inclination of the inner wall of the assembly hole.

[0168] Next, referring to FIG. 11, the semiconductor light-emitting element (150) may be a semiconductor light-emitting element that emits red, green, or blue colors. For example, a semiconductor light-emitting element that emits green or blue colors may be 150a, and a semiconductor light-emitting element that emits red colors may be 150b, but is not limited thereto.

[0169] Meanwhile, in the case of a semiconductor light-emitting device (150a) that emits green or blue light, the etching process can be the same because a semiconductor epitaxial material of the same composition is used. Accordingly, the slopes of the first-first conductive semiconductor layers of the green or blue semiconductor light-emitting device (150a) can be matched.

[0170] On the other hand, in the case of a semiconductor light-emitting element (150b) that emits red color, a semiconductor epitaxial material having a different composition is used than that of a green or blue color semiconductor light-emitting element, so the etching process may be different, and the slope of the 1-1 conductive semiconductor layer may be different.

[0171] For example, in a semiconductor light-emitting element (150a) that emits green or blue color, the angle (A3) between the lower surface and the side surface of the first-first conductive semiconductor layer may be smaller than the angle (A4) between the lower surface and the side surface of the first-first conductive semiconductor layer in a semiconductor light-emitting element (150b) that emits red color.

[0172] Additionally, in a semiconductor light-emitting element (150a) that emits green or blue color, the angle (B3) between the upper surface and the side surface of the first-first conductive semiconductor layer may be greater than the angle (B4) between the upper surface and the side surface of the first-first conductive semiconductor layer in a semiconductor light-emitting element (150b) that emits red color.

[0173] On the other hand, even if the semiconductor light-emitting element (150) is a semiconductor light-emitting element (150a) that emits green or blue color, or a semiconductor light-emitting element (150b) that emits red color, the length of the upper surface of the 1-1 conductive semiconductor layer may be the same. Accordingly, in the fourth embodiment, the distance (D6) between the chip and the partition wall (120) may be constant regardless of the semiconductor epitaxial material of the semiconductor light-emitting element (150).

[0174] Therefore, the fourth embodiment has a special technical effect in that the gap between the chip and the partition wall is maintained constant even if the colors emitted by the semiconductor light-emitting element are different, thereby preventing defective assembly such as mixing of RGB colors or double assembly.

[0175]

[0176] Fig. 12 is a conceptual diagram of a display device including a semiconductor light-emitting element according to a fifth embodiment. Fig. 12 may employ technical features of the first to fourth embodiments. Next, referring to Fig. 12, the fifth embodiment may include a substrate (110), a semiconductor light-emitting element (150), a partition wall (120), an insulating layer (140), a contact electrode (130), and at least one electrode (155).

[0177] At this time, the 1-1 conductive semiconductor layer (158a) of the semiconductor light-emitting element (150) may have a side surface facing the partition wall (120) that has an inclination in the same direction with respect to the vertical direction of the partition wall (120). In addition, the inclination of the side surface facing the partition wall (120) of the 1-1 conductive semiconductor layer (158a) may correspond.

[0178] Accordingly, regardless of the height of the 1-1 conductive semiconductor layer (158a), a predetermined gap can be maintained between the barrier rib (120). In addition, the distance between the lower end of the 1-1 conductive semiconductor layer (158a) and the barrier rib (120) can correspond to the distance between the upper end of the 1-1 conductive semiconductor layer (158a) and the barrier rib (120).

[0179] Accordingly, in the fifth embodiment, the insulating layer (140) filling the gap between the semiconductor light-emitting element (150) and the partition wall (120) can be uniformly filled. In addition, the distance between the partition wall (120) and the electrode (155) can be shortened. In addition, even if the slope of the first-first conductive semiconductor layer (158a) is different depending on the color emitted by the semiconductor light-emitting element (150), the partition wall (120) and the electrode (155) can be arranged close to each other.

[0180] Accordingly, the fifth embodiment has a special technical effect in that when the contact electrode (130) is connected to the electrode (155) along the partition wall (120) and the insulating layer (140), the contact process becomes easier and the reliability of the contact electrode (130) is improved.

[0181] In addition, since the semiconductor light-emitting element (150) of the fifth embodiment has a heterogeneous slope, the upper surface of the first-first conductive semiconductor layer (158a) is longer than the lower surface, and a larger area of ​​electrodes for electrical contact can be secured. Accordingly, there is a technical effect of improving process errors in the contact electrode process.

[0182] Although Fig. 12 shows that the contact electrode (130) is connected to only one electrode (155) of the semiconductor light emitting element (150), it can be applied equally to both electrodes.

[0183]

[0184] A semiconductor light-emitting element for pixels according to an embodiment and a display device including the same have a technical effect of improving the correct assembly rate during self-assembly.

[0185] For example, the embodiment can prevent defective assembly such as double assembly or non-assembly and improve the correct assembly rate by forming the slope of one side of the 1-1 challenge type semiconductor layer and the assembly barrier to correspond to each other.

[0186] In addition, the embodiment has a technical effect that can improve the degree of freedom in designing the size and position of electrodes for electrical connection with contact electrodes in a horizontal semiconductor light-emitting device.

[0187] For example, since the embodiment forms the light-emitting structure and the first-first conductive semiconductor layer to have different slopes, the upper surface of the first-first conductive semiconductor layer is longer than the lower surface, and the degree of design freedom, such as the size and position of the electrode located on the upper surface, can be improved.

[0188] In addition, the embodiment has a technical effect of ensuring the ease of a contact electrode process for electrical connection with a semiconductor light-emitting device and improving the reliability of the contact electrode.

[0189] For example, the embodiment can secure the area of ​​the upper surface of the first-first conductive semiconductor layer in a semiconductor light-emitting device having a heterogeneous slope structure, thereby sufficiently securing the area of ​​the electrode, improving the error of the contact electrode process, and enhancing reliability.

[0190] In addition, the embodiment has a technical effect of improving light distribution of a semiconductor light-emitting device, thereby enhancing light efficiency.

[0191] In addition, the embodiment has a technical effect of improving light extraction at the center of a semiconductor light-emitting device, thereby improving deviation according to a wide viewing angle.

[0192] For example, the embodiment can improve light distribution through a heterogeneous slope structure in a semiconductor light-emitting device and improve light extraction efficiency in the upward direction by arranging a reflective film on the side and bottom of the first-first conductive semiconductor layer.

[0193] In addition, the embodiment has a technical effect of preventing defective assembly such as mixed color or double assembly by designing the gap between the chip and the partition wall to be constant regardless of the semiconductor epitaxial material constituting the semiconductor light-emitting element.

[0194] For example, the embodiment can prevent a decrease in the assembly rate by preventing color mixing and double assembly by matching the gap between the chip and the partition wall even if the semiconductor epitaxial materials constituting the semiconductor light-emitting element are different.

[0195]

[0196] [Explanation of symbols]

[0197] 10, 110: Substrate

[0198] 20. 120: Bulkhead

[0199] 30, 130: Contact electrode

[0200] 40, 140: Insulation layer

[0201] 150: Semiconductor light-emitting device

[0202] 151: 1-2nd challenge semiconductor layer

[0203] 151a: First conductive semiconductor layer

[0204] 152: Active layer

[0205] 153: Second challenge semiconductor layer

[0206] 155: Electrode

[0207] 156: Second electrode

[0208] 158a: 1-1 conductive semiconductor layer

[0209] 158b: Luminescent structure

[0210] 160H: Assembly hole

[0211] 170: Semi-desert

[0212] 170a: First semi-desert

[0213] 170b: Second semi-desert

[0214]

[0215] The embodiment can be adopted in the field of displays that display images or information.

[0216] The embodiment can be adopted in the field of displays that display images or information using semiconductor light-emitting elements.

[0217] The embodiment can be adopted in the display field that displays images or information using micro- or nano-level semiconductor light-emitting elements.

Claims

1. 1-1 Challenge type semiconductor layer; A light-emitting structure disposed on the first-first conductive semiconductor layer, and including a first-second conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and At least one electrode disposed on the first-first conductive semiconductor layer; A pixel semiconductor light-emitting device, characterized in that the side surfaces of the first-first conductive semiconductor layer and the light-emitting structure have different inclination directions.

2. In paragraph 1, A pixel semiconductor light-emitting device, characterized in that the slope of the side surface of the first-first conductive semiconductor layer and the slope of the side surface of the light-emitting structure have a positive (+) slope and a negative (-) slope, respectively, based on the upper surface of the first-first conductive semiconductor layer.

3. In paragraph 1, The angle between the lower surface and the side surface of the above 1-1 challenge type semiconductor layer is an obtuse angle, A pixel semiconductor light-emitting element, wherein the angle between the upper surface and the side surface of the first-first conductive semiconductor layer is an acute angle.

4. In paragraph 1, A pixel semiconductor light-emitting element, wherein the length of the upper surface of the first-first conductive semiconductor layer is longer than the length of the lower surface.

5. In paragraph 1, A pixel semiconductor light-emitting device further comprising a reflective film disposed on a side or lower surface of the first-first conductive semiconductor layer.

6. In paragraph 1, The above light-emitting structure, A pixel semiconductor light-emitting element arranged to one side with respect to the center of the above 1-1 challenge type semiconductor layer.

7. Substrate; An assembly partition wall disposed on the above substrate and having an assembly hole; and It includes a semiconductor light emitting element placed within the above assembly hole, A display device including a pixel semiconductor light-emitting device, wherein the semiconductor light-emitting device comprises a pixel semiconductor light-emitting device according to any one of claims 1 to 6.

8. In paragraph 7, A display device including a pixel semiconductor light-emitting element, wherein the facing side surfaces of the first-first conductive semiconductor layer and the assembly barrier have corresponding slopes.

9. In paragraph 7, The distance between the lower end of the first-first challenge type semiconductor layer and the assembly barrier is A display device including a pixel semiconductor light-emitting element corresponding to the distance between the lower end of the first-first conductive semiconductor layer and the assembly barrier.

10. In paragraph 8, A display device including a pixel semiconductor light-emitting element, wherein the facing sides of the first-first conductive semiconductor layer and the assembly barrier have parallel slopes.

11. In paragraph 9, The distance between the lower end of the first-first challenge type semiconductor layer and the assembly barrier is A display device including a pixel semiconductor light-emitting element, the distance between the lower end of the first-first conductive semiconductor layer and the assembly barrier is the same.

Images