Display apparatus

Abstract

Provided is a display apparatus with high display quality. Provided is a display apparatus including first and second light-emitting devices having first and second EL layers, respectively, disposed adjacently on a first insulating layer, and second to fourth insulating layers provided therebetween, wherein the second insulating layer is in contact with a portion of the top and side surfaces of the first and second EL layers as well as the top surface of the first insulating layer located between the first and second light emitting devices, the third insulating layer is located on the second insulating layer, with the outline of the third insulating layer located on the inside of the outline of the second insulating layer, the fourth insulating layer is located on the third insulating layer, with the outline of the fourth insulating layer located on the outside of the outline of the third insulating layer, and the second and fourth insulating layers are inorganic insulating films produced by PEALD.

Description

display device

[0001] 1. Field of the Invention One embodiment of the present invention relates to a display device and a manufacturing method of the display device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. Examples of the technical field of one embodiment of the present invention disclosed in this specification and the like include semiconductor devices, display devices, light-emitting devices, power storage devices, memory devices, electronic devices, lighting devices, input devices, input / output devices, driving methods thereof, and manufacturing methods thereof. A semiconductor device refers to any device that can function by utilizing semiconductor characteristics.

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers. Furthermore, stationary display devices such as televisions and monitors are also required to have higher definitions in line with the trend toward higher resolutions. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of display devices that can be used in the display panel include liquid crystal display devices, organic EL (Electro Luminescence) elements, light-emitting devices equipped with light-emitting elements such as light-emitting diodes (LEDs), and electronic paper that displays using an electrophoresis method or the like.

[0005] For example, the basic structure of an organic EL element is a layer containing a light-emitting organic compound sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A display device using such an organic EL element does not require a backlight, which is necessary in liquid crystal display devices and the like, and therefore can realize a thin, lightweight, high-contrast, and low-power display device. For example, an example of a display device using an organic EL element is described in Patent Document 1.

[0006] Patent Document 2 discloses a display device for VR that uses an organic EL device.

[0007] Patent Document 1: JP 2002-324673 A, International Publication No. 2018 / 087625

[0008] An object of one embodiment of the present invention is to provide a display device with high display quality.An object of one embodiment of the present invention is to provide a display device with high reliability.An object of one embodiment of the present invention is to provide a display device with low power consumption.An object of one embodiment of the present invention is to provide a display device that can easily be made high-definition.An object of one embodiment of the present invention is to provide a display device that has both high display quality and high definition.An object of one embodiment of the present invention is to provide a display device with high contrast.

[0009] An object of one embodiment of the present invention is to provide a display device having a novel structure or a manufacturing method of the display device.An object of one embodiment of the present invention is to provide a method for manufacturing the above-described display device with high yield.An object of one embodiment of the present invention is to at least alleviate at least one of the problems of the prior art.

[0010] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these can be extracted from the description of the specification, drawings, claims, etc.

[0011] One aspect of the present invention is a display device having a first light-emitting device, a second light-emitting device arranged adjacent to the first light-emitting device, a base insulating layer, a first insulating layer, a second insulating layer, and a third insulating layer, in which the first light-emitting device has a first electrode provided on the base insulating layer, a first EL layer on the first electrode, and a second electrode on the first EL layer, and the second light-emitting device has a third electrode provided on the base insulating layer, a second EL layer on the third electrode, and a fourth electrode on the second EL layer, in which the second electrode and the fourth electrode are part of a continuous common electrode shared by the first light-emitting device and the second light-emitting device, the third insulating layer includes an inorganic material; the second insulating layer includes an organic material; the first insulating layer continuously covers the top end and side surfaces of the first EL layer, the base insulating layer between the first electrode and the third electrode, and the side and top end surfaces of the second EL layer; the second insulating layer is disposed on the first insulating layer, and an end of the second insulating layer is located inside the end of the first insulating layer; the third insulating layer is disposed on the second insulating layer, and an end that does not overlap with the first insulating layer contacts the end surface of the first insulating layer; the third insulating layer overlaps with a portion of a common electrode located between the second electrode and the fourth electrode; and the film thickness of the first insulating layer and the film thickness of the third insulating layer are 5 nm or more and 20 nm or less.

[0012] Another embodiment of the present invention is a display device having the above structure, in which the first light-emitting device has a third EL layer between the first EL layer and the second electrode, the second light-emitting device has a fourth EL layer between the second EL layer and the fourth electrode, the third EL layer and the fourth EL layer are part of a continuous common layer shared by the first light-emitting device and the second light-emitting device, and the third insulating layer overlaps with part of the common layer located between the third EL layer and the fourth EL layer and with part of the common electrode located between the second electrode and the fourth electrode.

[0013] Another embodiment of the present invention is a display device including a first light-emitting device, a second light-emitting device, a base insulating layer, a first insulating layer, a second insulating layer, and a third insulating layer, in which the first light-emitting device has a first electrode provided on the base insulating layer, a first EL layer on the first electrode, and a second electrode on the first EL layer, and the second light-emitting device has a third electrode provided on the base insulating layer, a second EL layer on the third electrode, and a fourth electrode on the second EL layer, the first electrode and the second electrode being disposed adjacent to each other, the second electrode and the fourth electrode being part of a continuous common electrode shared by the first light-emitting device and the second light-emitting device, the first insulating layer and the third insulating layer containing an inorganic material, the second insulating layer includes an organic material; the first insulating layer continuously covers the top edge and side of the first EL layer, the base insulating layer between the first electrode and the third electrode, and the side and top edge of the second EL layer; the second insulating layer is disposed on the first insulating layer, and the contour of the second insulating layer is located inside the contour of the first insulating layer; the third insulating layer is disposed on the second insulating layer, and the contour of the third insulating layer is located outside the contour of the third layer; the third insulating layer contacts the first insulating layer at an end that does not overlap with the first insulating layer; the first to third insulating layers overlap with a portion of a common electrode located between the second electrode and the fourth electrode; and the film thickness of the first insulating layer and the film thickness of the third insulating layer are 5 nm to 20 nm.

[0014] Another embodiment of the present invention is a display device having the above structure, in which the first light-emitting device has a third EL layer between the first EL layer and the second electrode, the second light-emitting device has a fourth EL layer between the second EL layer and the fourth electrode, the third EL layer and the fourth EL layer are part of a continuous common layer shared by the first light-emitting device and the second light-emitting device, and the first to third insulating layers overlap with part of the common layer located between the third EL layer and the fourth EL layer and with part of the common electrode located between the second electrode and the fourth electrode.

[0015] Another embodiment of the present invention is a display device having the above structure, in which the thickness of the first insulating layer and the thickness of the third insulating layer are greater than or equal to 5 nm and less than or equal to 10 nm.

[0016] Another embodiment of the present invention is a display device having the above structure, in which the first insulating layer and the third insulating layer are layers formed using a PEALD method.

[0017] Another embodiment of the present invention is a display device having any of the above structures, in which the first insulating layer and the third insulating layer contain silicon nitride.

[0018] Another embodiment of the present invention is a display device having the above structure, in which one or both of the first insulating layer and the third insulating layer have a stacked structure of a layer containing silicon nitride and a layer made of another material.

[0019] Another embodiment of the present invention is a display device having the above structure, wherein one or both of the first insulating layer and the third insulating layer have a stacked structure of a layer containing silicon nitride and a layer containing silicon oxide.

[0020] In the above, it is preferable that the upper surface of the first insulating layer has a concave curved shape in a cross-sectional view of the display device.

[0021] According to one embodiment of the present invention, a display device with high display quality can be provided. Furthermore, a highly reliable display device can be provided. Furthermore, a display device with low power consumption can be provided. Furthermore, a display device that can easily achieve high resolution can be provided. Furthermore, a display device that combines high display quality and high resolution can be provided. Furthermore, a display device with high contrast can be provided.

[0022] According to one embodiment of the present invention, a display device having a novel structure or a manufacturing method of the display device can be provided. Also, a method for manufacturing the above-described display device with high yield can be provided. According to one embodiment of the present invention, at least one of the problems of the prior art can be alleviated.

[0023] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0024] FIGS. 1A and 1B are diagrams showing a structural example of a display device. FIG. 2 is a diagram showing a structural example of a display device. FIGS. 3A to 3E are diagrams showing a manufacturing method example of a display device. FIGS. 4A to 4D are diagrams showing a manufacturing method example of a display device. FIGS. 5A to 5D are diagrams showing a manufacturing method example of a display device. FIGS. 6A to 6C are diagrams showing a manufacturing method example of a display device. FIGS. 7A to 7C are diagrams showing a manufacturing method example of a display device. FIGS. 8A to 8C are diagrams showing a manufacturing method example of a display device. FIGS. 9A to 9C are diagrams showing a structural example of a light-emitting device. FIG. 10 is a diagram showing a structural example of a light-emitting device. FIGS. 11A and 11B are perspective views showing an example of a display device. FIGS. 12A and 12B are cross-sectional views showing an example of a display device. FIG. 13 is a perspective view showing an example of a display device. FIG. 14 is a cross-sectional view showing an example of a display device. FIG. 15 is a cross-sectional view showing an example of a display device. FIG. 16 is a cross-sectional view showing an example of a display device. FIGS. 17A to 17D are diagrams showing examples of electronic devices. 18A to 18F are diagrams illustrating examples of electronic devices. FIGS. 19A to 19G are diagrams illustrating examples of electronic devices. FIG. 20 is a schematic diagram illustrating a configuration of a film formation system that can be used to manufacture a functional panel according to an embodiment. FIG. 21 is a schematic diagram illustrating a configuration of a film formation system that can be used to manufacture a functional panel according to an embodiment. FIGS. 22A and 22B are schematic diagrams illustrating a configuration of a film formation apparatus that can be used to manufacture a functional panel according to an embodiment.

[0025] Hereinafter, embodiments will be described with reference to the drawings. However, it will be readily understood by those skilled in the art that the embodiments can be implemented in many different ways and that various changes in form and details can be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the following description of the embodiments.

[0026] In the configuration of the invention described below, the same parts or parts having similar functions are denoted by the same reference numerals in different drawings, and repeated explanations thereof will be omitted. In addition, when referring to similar functions, the same hatch pattern may be used and no particular reference numeral may be assigned.

[0027] In the drawings described in this specification, the size of each component, the thickness of a layer, or an area may be exaggerated for clarity, and therefore, the drawings are not necessarily limited to the scale.

[0028] In this specification, ordinal numbers such as "first" and "second" are used to avoid confusion of components and do not limit the number.

[0029] Furthermore, in this specification and the like, the terms "film" and "layer" are interchangeable. For example, the terms "conductive layer" and "insulating layer" may be interchangeable with the terms "conductive film" and "insulating film."

[0030] In this specification, the EL layer refers to a layer provided between a pair of electrodes of a light-emitting element and containing at least a light-emitting substance (also referred to as a light-emitting layer), or a stack including a light-emitting layer.

[0031] In this specification and the like, a display panel, which is one aspect of a display device, has a function of displaying (outputting) an image or the like on a display surface, and therefore the display panel is one aspect of an output device.

[0032] In addition, in this specification, a display panel having a connector such as an FPC (Flexible Printed Circuit) or a TCP (Tape Carrier Package) attached to the substrate, or a display panel having an IC mounted on the substrate using a COG (Chip On Glass) method or the like, may be referred to as a display panel module, a display module, or simply a display panel.

[0033] A light-emitting element of one embodiment of the present invention may include a layer containing a substance with a high hole-injection property, a substance with a high hole-transport property, a substance with a high electron-transport property, a substance with a high electron-injection property, a bipolar substance, or the like.

[0034] Embodiment 1 In this embodiment, a structural example of a display device according to one embodiment of the present invention and an example of a manufacturing method of the display device will be described.

[0035] One embodiment of the present invention is a display device having a light-emitting element (also referred to as a light-emitting device). The display device has at least two light-emitting elements that emit light of different colors. Each light-emitting element has a pair of electrodes and an EL layer therebetween. As the light-emitting element, an electroluminescent element such as an organic EL element or an inorganic EL element can be used. Alternatively, a light-emitting diode (LED) can be used. The light-emitting element of one embodiment of the present invention is preferably an organic EL element (organic electroluminescent element). Two or more light-emitting elements that emit light of different colors each have an EL layer containing a different material. For example, a full-color display device can be realized by having three types of light-emitting elements that emit red (R), green (G), or blue (B) light, respectively.

[0036] Here, when creating separate EL layers for light-emitting elements of different colors, it is known to form them by vapor deposition using a shadow mask such as a metal mask. However, this method makes it difficult to achieve high resolution and a high aperture ratio because the shape and position of the island-shaped organic film can deviate from the design due to various factors such as the accuracy of the metal mask, misalignment between the metal mask and the substrate, deflection of the metal mask, and the spread of the contours of the deposited film due to vapor scattering. Furthermore, during vapor deposition, debris may be generated due to material adhering to the metal mask. Such debris may cause pattern defects in the light-emitting elements. Furthermore, the debris may cause short circuits. Furthermore, a process of cleaning the material adhering to the metal mask is required. Therefore, measures have been taken to artificially increase the resolution (also known as pixel density) by applying special pixel arrangement methods such as a pentile arrangement.

[0037] In one embodiment of the present invention, an EL layer is processed into a fine pattern without using a shadow mask such as a metal mask. This makes it possible to realize a display device with high definition and a large aperture ratio, which have been difficult to achieve until now. Furthermore, because the EL layer can be individually fabricated, a display device with extremely vivid, high contrast, and high display quality can be realized.

[0038] For simplicity, the case where EL layers for two color light-emitting elements are formed separately will be described here. First, an EL film and a first sacrificial film are laminated to cover the pixel electrode. Next, a resist mask is formed on the first sacrificial film. Next, a portion of the first sacrificial film and a portion of the first EL film are etched using the resist mask to form the first EL layer and a first sacrificial layer (also called a protective film or a mask film) on the first EL layer.

[0039] Next, a second EL film and a second sacrificial film are laminated and formed. Next, a resist mask is used to etch a portion of the second sacrificial film and a portion of the second EL film to form a second EL layer and a second sacrificial layer on the second EL layer. In this manner, the first EL layer and the second EL layer can be separately formed. Finally, the first sacrificial layer and the second sacrificial layer are removed, and a common electrode is formed, thereby separately forming two-color light-emitting elements.

[0040] Furthermore, by repeating the above process, EL layers for light emitting elements of three or more colors can be produced separately, and a display device having light emitting elements of three or four or more colors can be realized.

[0041] At the edge of the EL layer, a step occurs between the area where the pixel electrode and the EL layer are provided and the area where the pixel electrode and the EL layer are not provided. When forming a common electrode on the EL layer, the step at the edge of the EL layer may reduce the coverage of the common electrode, which may cause the common electrode to break (break). Furthermore, the common electrode may become thinner, which may increase its electrical resistance. Furthermore, contact between the common electrode and the pixel electrode may cause a short circuit.

[0042] Here, by providing a first insulating layer containing an organic material between the first EL layer and the second EL layer, the surface irregularities on which the common electrode is provided can be reduced, and discontinuities in the common electrode, coverage, and conductivity can be reduced. Furthermore, short circuits between the common electrode and the pixel electrode can be suppressed. However, providing the first insulating layer can also cause water or other components in the first insulating layer to adversely affect the EL device.

[0043] Therefore, in one embodiment of the present invention, as shown in FIG. 1B , a second insulating layer 125a containing an inorganic material is provided between the first insulating layer 127 containing an organic material and the EL layer 104. Here, the second insulating layer 125a has a barrier property against at least one of oxygen and moisture. By separating the first insulating layer 127 from the EL layer 104 using the second insulating layer 125a, the intrusion of at least one of oxygen and moisture from the EL layer 104 into the display device can be suppressed, resulting in a highly reliable display device. Furthermore, by forming the second insulating layer by a plasma-enhanced atomic layer deposition (PEALD) method, a film with high barrier properties can be formed at a low temperature. This allows the thickness of the second insulating layer 125a to be thinner while maintaining its barrier properties, compared to when the second insulating layer 125a is formed by other deposition methods. The thin second insulating layer 125a reduces the step between the second insulating layer 125a and the surface of the EL layer 104, thereby further suppressing defects such as disconnection of the common electrode (second electrode 102). Furthermore, by forming the second insulating layer 125a using the PEALD method, the second insulating layer 125a can be formed at a low temperature, thereby reducing damage to the EL layer 104 and making it easier to obtain a bus with high-quality light emission.

[0044] In one embodiment of the present invention, a third insulating layer 125b containing an inorganic material is provided between the first insulating layer 127 containing an organic material and the second electrode 102 serving as a common electrode. Here, the third insulating layer 125b has a barrier property against at least one of oxygen and moisture. By separating the first insulating layer 127 and the second electrode 102 with the third insulating layer 125b, at least one of oxygen and moisture can be prevented from reaching the second electrode 102, thereby providing a highly reliable display device. By forming the third insulating layer 125b by a PEALD method, a film with high barrier properties can be formed at a low temperature. This allows the thickness of the third insulating layer 125b to be thinner while maintaining its barrier properties, compared to when the third insulating layer 125b is formed by other deposition methods. The thin third insulating layer 125b reduces the step between the EL layer and the third insulating layer, thereby further suppressing defects such as discontinuities in the second electrode 102. Furthermore, since the film can be formed at a low temperature, damage to the EL layer can be reduced, making it easier to obtain a light-emitting device with high display quality.

[0045] When the EL layer 105 is provided, the EL layer 105 is formed between the second electrode 102 and the EL layer 104 and between the second electrode 102 and the third insulating layer 125b. The third insulating layer 125b separates the first insulating layer 127 from the EL layer 105 and the second electrode 102, thereby preventing at least one of oxygen and moisture from reaching the EL layer 105 and the second electrode 102, resulting in a highly reliable display device. By forming the third insulating layer 125b by the PEALD method, a film with high barrier properties can be formed at a low temperature. This allows the thickness of the third insulating layer to be thinner while maintaining its barrier properties, compared to when the third insulating layer 125b is formed by other deposition methods. The thin third insulating layer 125b reduces the step between the EL layer and the second electrode 102, thereby further suppressing defects such as breakage of the second electrode 102. Furthermore, since the film can be formed at a low temperature, damage to the EL layer can be reduced, making it easier to obtain a light-emitting device with high display quality.

[0046] Furthermore, the third insulating layer 125b is preferably configured to be in contact with the second insulating layer 125a in a region that does not overlap with the first insulating layer 127. The top, side, and bottom surfaces of the first insulating layer 127 are preferably surrounded by the second insulating layer 125a and the third insulating layer 125b. This results in a structure in which the first insulating layer 127 containing an organic material is sealed by the second insulating layer 125a and the third insulating layer 125b, which have a barrier property against at least one of oxygen and moisture. This can prevent at least one of oxygen and moisture contained in the first insulating layer 127 from diffusing directly or indirectly into the EL layer, the second electrode 102, or the like.

[0047] In this manner, by providing the first insulating layer 127, the second insulating layer 125a, and the third insulating layer 125b and forming the second insulating layer 125a and the third insulating layer 125b by a PEALD method, it is possible to suppress the occurrence of discontinuities in the second electrode 102, an increase in electrical resistance, and deterioration of the EL layer 104 (EL layer 105) and the second electrode 102 due to the diffusion of at least one of oxygen and moisture, thereby providing a light-emitting device with favorable characteristics. Note that when the second electrode 102 functions as a cathode, the electron-injection layer included in the second electrode 102 and the EL layer 105 is susceptible to deterioration due to oxygen, moisture, and the like, and therefore the structure of one embodiment of the present invention can be more preferably used.

[0048] When EL layers of different colors are adjacent, it is difficult to achieve a spacing of less than 10 μm using a formation method using, for example, a metal mask. However, by performing processing using photolithography, the spacing can be narrowed to 3 μm or less, 2 μm or less, or even 1 μm or less. For example, by using an exposure device for LSIs, the spacing can be narrowed to 500 nm or less, 200 nm or less, 100 nm or less, or even 50 nm or less. This significantly reduces the area of ​​the non-light-emitting region that may exist between two light-emitting elements, enabling the aperture ratio to approach 100%. For example, the aperture ratio can be 50% or more, 60% or more, 70% or more, 80% or more, or even 90% or more, and even less than 100%.

[0049] Furthermore, the pattern of the EL layer itself can be made much smaller than when a metal mask is used. For example, when a metal mask is used to separately fabricate an EL layer, thickness variations occur between the center and edges of the pattern, resulting in a smaller effective area that can be used as the light-emitting region relative to the overall area of ​​the pattern. On the other hand, processing using photolithography allows for processing of a film formed to a uniform thickness, making it possible to achieve a uniform thickness within the pattern, and even with a fine pattern, almost the entire area can be used as the light-emitting region. Therefore, the above-mentioned manufacturing method can achieve both high definition and a high aperture ratio.

[0050] In this way, according to the above-described manufacturing method, a display device integrating minute light-emitting elements can be realized, and therefore a display device having a so-called stripe arrangement and a resolution of 500 ppi or more, 1000 ppi or more, 2000 ppi or more, even 3000 ppi or more, or even 5000 ppi or more can be realized.

[0051] Below, a more specific example of a structure and an example of a manufacturing method of a display device of one embodiment of the present invention will be described with reference to the drawings.

[0052] As illustrated in FIGS. 1A and 1B, a plurality of light-emitting devices 130 are formed on an insulating layer 175 to form a display device 100.

[0053] The display device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0054] In this specification and the like, when describing matters common to, for example, the subpixels 110R, 110G, and 110B, they may be referred to as the subpixels 110. When describing matters common to other components distinguished by alphabets, they may also be described using symbols without the alphabets.

[0055] The subpixel 110R emits red light, the subpixel 110G emits green light, and the subpixel 110B emits blue light. This allows an image to be displayed in the pixel portion 177. In this embodiment, three subpixels of red (R), green (G), and blue (B) are described as an example. However, combinations of subpixels of other colors may also be used. The number of subpixels is not limited to three, and may be four or more. Examples of four subpixels include four subpixels of R, G, B, and white (W); four subpixels of R, G, B, and Y; and four subpixels of R, G, B, and infrared (IR). A sensor may also be provided within the pixel 178. This sensor is preferably an organic photodiode sensor using an organic compound. In an organic photodiode sensor using an organic compound, a portion of the carrier transport layer can be formed using the same material as the light-emitting device.

[0056] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0057] 1A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0058] A connection section 140 may be provided outside the pixel section 177, and a region 141 may also be provided. The region 141 is provided between the pixel section 177 and the connection section 140. The connection section 140 is provided with a conductive layer 111C.

[0059] 1A shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0060] Fig. 1B is an example of a cross-sectional view taken along dashed line A1-A2 in Fig. 1A. As shown in Fig. 1B, the display device has an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 is provided on a substrate (not shown). The insulating layers 175, 174, and 173 have openings that reach the conductive layer 172, and plugs 176 are provided to fill the openings.

[0061] In the pixel portion 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The protective layer 131 is an inorganic insulating film formed by the PEALD method, which allows a film with high barrier properties to be formed at low temperatures. This reduces damage to the EL layer 104, making it easier to obtain a display device with high display quality. Furthermore, it is possible to effectively suppress the intrusion of substances that promote deterioration of the EL layer 104, the EL layer 105, and the second electrode 102, such as water, oxygen, and trace components in the atmosphere, thereby obtaining a display device with high display quality. Furthermore, because the inorganic insulating film formed by the PEALD method has high barrier properties, the protective layer 131 can be formed thin, making it possible to obtain a display device with high display quality. The protective layer 131 may have a stacked structure of a protective layer 131a and a protective layer 131b. The protective layer 131 may also be a stack of three or more layers.

[0062] The substrate 120 is bonded to the protective layer 131 by a resin layer 122. In addition, it is preferable that a second insulating layer 125a, a first insulating layer 127 on the second insulating layer 125a, and a third insulating layer 125b on the first insulating layer 127 are provided between adjacent light-emitting devices 130.

[0063] The second insulating layer 125a is provided so as to be in contact with the side surfaces of the EL layers 104 of the light-emitting device 130. The second insulating layer 125a is preferably provided so as to be in contact with the side surfaces of the pixel electrodes (first electrodes 101) of the light-emitting device 130. The second insulating layer 125a is preferably provided so as to be in contact with the side surfaces and bottom surface of the first insulating layer 127.

[0064] With the above structure, the first insulating layer 127 can be separated from the EL layer 104 by the second insulating layer 125a.

[0065] The second insulating layer 125a functions as a protective insulating layer for the EL layer 104. The second insulating layer 125a preferably has a barrier property against at least one of oxygen and moisture. By separating the first insulating layer 127 and the EL layer 104 with such a second insulating layer 125a, it is possible to prevent oxygen, moisture, or their constituent elements from entering the EL layer 104 from the side surface thereof, thereby providing a highly reliable display device.

[0066] If the second insulating layer 125a is thick, the spacing between the EL layers 104 of each light-emitting device 130 increases, resulting in a low aperture ratio and possibly a step-like discontinuity in the second electrode 102. Furthermore, the step-like discontinuity may cause a partial thinning of the second electrode 102, resulting in an increase in electrical resistance. If the second insulating layer 125a is thinned to prevent this, the effect of preventing oxygen, moisture, or their constituent elements from penetrating into the EL layer 104 from the side surface may be reduced. Therefore, in one embodiment of the present invention, the second insulating layer 125a is formed by the PEALD method, which allows the formation of an insulating layer having higher barrier properties and a thinner thickness than conventional insulating layers. This makes it possible to obtain a light-emitting device with a high aperture ratio and excellent reliability.

[0067] The thickness of the second insulating layer 125a in the region in contact with the side surface of the EL layer 104 is preferably 5 nm to 50 nm, more preferably 5 nm to 30 nm, even more preferably 5 nm to 20 nm, and even more preferably 5 nm to 10 nm. By setting the width of the second insulating layer 125a within the above range, a display device having a high aperture ratio and high reliability can be obtained. By forming the insulating layer using the PEALD method, sufficient barrier properties can be obtained even if the insulating layer is thin.

[0068] The second insulating layer 125a can be an insulating layer containing an inorganic material. The second insulating layer 125a can be formed of a single layer or a stack of silicon oxide, silicon oxynitride, silicon nitride, silicon nitride oxide, aluminum oxide, magnesium oxide, hafnium oxide, gallium oxide, or the like. In particular, a silicon-based insulating film such as silicon oxide, silicon oxynitride, silicon nitride, or silicon nitride oxide is preferable.

[0069] In this specification, an oxynitride refers to a material whose composition contains more oxygen than nitrogen, and a nitride oxide refers to a material whose composition contains more nitrogen than oxygen. For example, silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen, and silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen.

[0070] Furthermore, the second insulating layer 125a is preferably a laminated film of a second insulating layer 125a1 and a second insulating layer 125a2 on the second insulating layer 125a1, as shown in FIG. 2 . As long as one of the second insulating layers 125a1 and 125a2 has the same structure as the second insulating layer 125a described above, the other may be formed using a different film formation method and material. By forming the second insulating layer 125a into a laminated structure, it is possible to obtain an insulating layer that simultaneously possesses barrier properties and other properties. For example, by forming one layer as a film with high barrier properties and the other as a film capable of stress relaxation or with good adhesion, it becomes easier to suppress the occurrence of defects such as peeling. The second insulating layer 125a1 and the second insulating layer 125a2 are preferably a laminated film of silicon nitride and silicon oxide. The second insulating layer may also have a laminated structure of three or more layers.

[0071] The other film can be formed by a sputtering method, a chemical vapor deposition (CVD) method, a molecular beam epitaxy (MBE) method, a pulsed laser deposition (PLD) method, an atomic layer deposition (ALD) method, or the like.

[0072] For example, aluminum oxide formed by ALD may be used as the second insulating layer 125a1, and silicon nitride formed by PEALD may be used as the second insulating layer 125a2. With this structure, silicon nitride with good barrier properties can be provided while reducing damage to the EL layer, and the barrier properties against oxygen and moisture can also be improved.

[0073] The first insulating layer 127 provided on the second insulating layer 125a fills the gaps formed between adjacent light-emitting elements, thereby reducing the step on the surface on which the second electrode 102 is formed and improving coverage, thereby suppressing defects such as step discontinuities. An insulating layer containing an organic material can be suitably used as the first insulating layer 127. For example, acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenolic resin, precursors of these resins, or the like can be used as the first insulating layer 127. Alternatively, a photosensitive resin can be used as the first insulating layer 127. The photosensitive resin can be a positive-type material or a negative-type material.

[0074] The third insulating layer 125b is provided between the first insulating layer 127 and the EL layer 105 or the second electrode 102. In this manner, the first insulating layer 127 overlaps with the second electrode 102 (and the EL layer 105) through the third insulating layer 125b. In other words, the first insulating layer 127 is separated from the second electrode 102 (and the EL layer 105) by the third insulating layer 125b.

[0075] The third insulating layer 125b has a region in contact with the lower surface of the second electrode 102 or the EL layer 105 and functions as a protective insulating layer for the second electrode 102 and the EL layer 105. The third insulating layer 125b preferably has a barrier property against at least one of oxygen and moisture. By separating the first insulating layer 127 from the second electrode 102 and the EL layer 105 by using such a third insulating layer 125b, it is possible to prevent at least one of oxygen and moisture from entering the second electrode 102 and the EL layer 105 from their lower surfaces, and thus it is possible to prevent the second electrode 102 and the EL layer 105 from being oxidized. As a result, a display device with high display quality and reliability can be obtained.

[0076] If the third insulating layer 125b is too thick, the aperture ratio of each light-emitting device 130 will be low. Furthermore, the step may cause the second electrode 102 (and the EL layer 105) to be disconnected. Furthermore, the step may cause a thin portion of the second electrode 102 (and the EL layer 105). However, if the third insulating layer 125b is too thin to prevent this, the effect of suppressing the penetration of oxygen, moisture, or their constituent elements into the EL layer 104 from the side surface may be reduced. In one embodiment of the present invention, the second insulating layer 125a is formed by the PEALD method, which allows the formation of an insulating layer with higher barrier properties and a thinner thickness than conventional insulating layers. This makes it possible to obtain a light-emitting device with a high aperture ratio and excellent reliability.

[0077] The thickness of the third insulating layer 125b in the region in contact with the side surface of the EL layer 104 is preferably 5 nm to 50 nm, more preferably 5 nm to 30 nm, even more preferably 5 nm to 20 nm, and even more preferably 5 nm to 10 nm. By setting the thickness of the third insulating layer 125b within the above range, a display device having a high aperture ratio and high reliability can be obtained. By forming the insulating layer using the PEALD method, sufficient barrier properties can be obtained even if the insulating layer is thin.

[0078] The third insulating layer 125b can be formed using a material similar to that of the second insulating layer 125a.

[0079] The third insulating layer 125b is preferably a laminated film like the second insulating layer 125a. As for the laminated insulating layers, as long as one is formed by the PEALD method like the second insulating layer 125a, the other may be formed by a different film formation method and material.

[0080] The third insulating layer 125b is preferably in contact with the second insulating layer 125a in a region that does not overlap with the first insulating layer 127. In particular, when the second insulating layer 125a contains a nitride with high barrier properties, the third insulating layer 125b is preferably in contact with the third insulating layer 125b. Furthermore, when viewed from above, the region where the third insulating layer 125b and the second insulating layer 125a are in contact is preferably formed so as to surround the first insulating layer 127. With this structure, the top, side, and bottom surfaces of the first insulating layer 127 are surrounded by the third insulating layer 125b and the second insulating layer 125a. In other words, the first insulating layer 127 has a structure sealed by the second insulating layer 125a and the third insulating layer 125b, which have barrier properties against at least one of oxygen and moisture.

[0081] By sealing the first insulating layer 127 containing an organic substance with the second insulating layer 125 a and the third insulating layer 125 b, it is possible to suppress direct or indirect diffusion of oxygen, moisture, or constituent elements thereof from the first insulating layer 127 to the EL layer 104, the EL layer 105, and the second electrode 102. This makes it possible to improve the display quality and reliability of the display device according to the present invention.

[0082] 1B shows multiple cross sections of the second insulating layer 125a, the third insulating layer 125b, and the first insulating layer 127, but when the display device is viewed from above, the second insulating layer 125a, the third insulating layer 125b, and the first insulating layer 127 are preferably connected to one another. In other words, the first insulating layer 127 is preferably an insulating layer having an opening over the first electrode.

[0083] 1B illustrates light-emitting device 130 as light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are light-emitting devices that emit light of different colors. For example, light-emitting device 130R can emit red light, light-emitting device 130G can emit green light, and light-emitting device 130B can emit blue light. Light-emitting device 130R, light-emitting device 130G, or light-emitting device 130B may also emit other visible light or infrared light.

[0084] The display device of one embodiment of the present invention can be, for example, a top-emission type in which light is emitted in a direction opposite to a substrate on which a light-emitting device is formed. Note that the display device of one embodiment of the present invention may also be a bottom-emission type.

[0085] The light-emitting device 130R includes a first electrode 101R (pixel electrode) composed of a conductive layer 151R and a conductive layer 152R, an EL layer 104R on the first electrode 101R, an organic compound layer (EL layer 105 on the EL layer 104R), and a second electrode 102 (common electrode) on the EL layer 105. The EL layer 105 is preferably located closer to the second electrode 102 (common electrode) than the light-emitting layer, and is preferably a hole-blocking layer, an electron-transporting layer, an electron-injecting layer, or a laminate of these. This configuration can minimize damage to the light-emitting layer or active layer during the photolithography process, and is expected to achieve good film quality and electrical characteristics. Furthermore, the EL layer 105 may include several layers, such as an electron-injecting layer, as a common layer in contact with the second electrode 102 (common electrode).

[0086] The light-emitting device 130G has a first electrode 101G (pixel electrode) composed of a conductive layer 151G and a conductive layer 152G, an EL layer 104G on the first electrode 101G, an EL layer 105 on the EL layer 104G, and a second electrode 102 (common electrode) on the EL layer 105. The EL layer 105 is preferably a hole-blocking layer, an electron-transporting layer, an electron-injecting layer, or a laminate of these layers.

[0087] The light-emitting device 130B has a first electrode 101B (pixel electrode) composed of a conductive layer 151B and a conductive layer 152B, an EL layer 104B on the first electrode 101B, an EL layer 105 on the EL layer 104B, and a second electrode 102 (common electrode) on the EL layer 105. The EL layer 105 is preferably a hole-blocking layer, an electron-transporting layer, an electron-injecting layer, or a laminate of these layers.

[0088] One of a pixel electrode (first electrode) and a common electrode (second electrode) of a light-emitting device functions as an anode, and the other functions as a cathode. In this embodiment, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0089] The EL layer 104R, the EL layer 104G, and the EL layer 104B are independent and island-like, respectively, or for each emitted color. It is preferable that the EL layer 104R, the EL layer 104G, and the EL layer 104B do not overlap with each other. By providing the EL layer 104 in an island-like manner for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution display device. This prevents crosstalk and realizes a display device with extremely high contrast. In particular, a display device with high current efficiency at low brightness can be realized.

[0090] The island-shaped EL layer 104 is formed by depositing an EL film and processing the EL film using a photolithography method.

[0091] The EL layer 104 is preferably provided on the upper surface of the first electrode 101 (pixel electrode) of the light-emitting device 130. This makes it easy to suppress the occurrence of leakage current and provide a light-emitting device with good color purity. Furthermore, covering the side surface of the pixel electrode of the light-emitting device 130 with the EL layer 104 prevents the pixel electrode from contacting the second electrode 102, thereby preventing short circuits in the light-emitting device 130.

[0092] In the display device of one embodiment of the present invention, the first electrode 101 (pixel electrode) of the light-emitting device preferably has a stacked structure. For example, in the example shown in FIG. 1B , the first electrode 101 of the light-emitting device 130 has a stacked structure of a conductive layer 151 provided on the substrate 171 side and a conductive layer 152 provided on the organic compound layer side.

[0093] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals, can also be used.

[0094] An oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used for the conductive layer 152. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0095] The conductive layer 151 may have a stacked structure of multiple layers containing different materials, and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer containing a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer containing a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, a layer in contact with the conductive layer 152 can be a layer containing a material that can be used for the conductive layer 152.

[0096] Note that the end portion of the conductive layer 151 may have a tapered shape. Specifically, the end portion of the conductive layer 151 preferably has a tapered shape with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered shape. By tapering the side surface of the conductive layer 152, coverage of the EL layer 104 provided along the side surface of the conductive layer 152 can be improved. Note that the end portion of the conductive layer 151 may not have a tapered shape and may be approximately perpendicular to the substrate surface. In this case, the distance between adjacent EL layers can be narrowed, and therefore a light-emitting device with a high aperture ratio can be provided.

[0097] The light-emitting device of one embodiment of the present invention can be a highly reliable light-emitting device because the light-emitting device 130 has the structure described in Embodiment 2. Furthermore, the light-emitting device of one embodiment of the present invention includes the steps described in Embodiment 1 in its manufacturing process, and therefore, the occurrence of defects is suppressed, the light-emitting device can be manufactured with a high yield, and the light-emitting device can be manufactured at a relatively low cost.

[0098] Next, an example of a method for manufacturing a display device having the structure shown in FIG. 1A will be described with reference to FIGS.

[0099] [Example of Manufacturing Method] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed using a sputtering method, a chemical vapor deposition (CVD) method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, or the like.

[0100] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the display device can be formed by wet film formation methods such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0101] Furthermore, when processing the thin films that constitute the display device, they can be processed using, for example, photolithography.

[0102] In photolithography, the light used for exposure may be, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these. Other light sources that can be used include ultraviolet light, KrF laser light, and ArF laser light. Exposure may also be performed by immersion exposure technology. Extreme ultraviolet (EUV) light or X-rays may also be used as the light used for exposure. An electron beam may also be used instead of the light used for exposure.

[0103] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0104] 3A, an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0105] The substrate may be a substrate having heat resistance sufficient to withstand at least a subsequent heat treatment, such as a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, a single crystal semiconductor substrate made of silicon, silicon carbide, or the like, a polycrystalline semiconductor substrate, a compound semiconductor substrate made of silicon germanium, or the like, or an SOI substrate.

[0106] 3A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed so as to fill the openings.

[0107] 3A , a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plugs 176 and the insulating layer 175. The conductive film 151f can be made of, for example, a metal material.

[0108] 3A, a resist mask 191 is formed over the conductive film 151f. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0109] 3B, for example, the conductive film 151f is removed from the region that does not overlap with the resist mask 191. In this way, the conductive layer 151 is formed.

[0110] 3C, the resist mask 191 is removed by, for example, ashing using oxygen plasma.

[0111] Next, as shown in FIG. 3D , an insulating film 156f, which will later become insulating layers 156R, 156G, 156B, and 156C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, and the insulating layer 175.

[0112] The insulating film 156f can be an inorganic insulating film such as an insulating oxide film, an insulating nitride film, an insulating oxynitride film, or an insulating nitride oxide film, for example, a silicon oxynitride film.

[0113] Subsequently, as shown in FIG. 3E, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C.

[0114] Subsequently, as shown in FIG. 4A, a conductive film 152f is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, the insulating layer 156C, and the insulating layer 175.

[0115] The conductive film 152f can be formed using, for example, a conductive oxide. The conductive film 152f may also be a stacked film.

[0116] Subsequently, as shown in FIG. 4B, the conductive film 152f is processed to form conductive layers 152R, 152G, 152B, and 152C.

[0117] 4C, the organic compound film 103Rf is formed on the conductive layer 152R, the conductive layer 152G, the conductive layer 152B, and the insulating layer 175. Note that, as shown in FIG. 4C, the organic compound film 103Rf is not formed on the conductive layer 152C.

[0118] Subsequently, as shown in FIG. 4C, a protective film 158Rf and a mask film 159Rf are formed.

[0119] By providing the protective film 158Rf on the organic compound film 103Rf, damage to the organic compound film 103Rf during the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0120] The protective film 158Rf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Rf, specifically, a film that has a large etching selectivity with respect to the organic compound film 103Rf.The mask film 159Rf is made of a film that has a large etching selectivity with respect to the protective film 158Rf.

[0121] The protective film 158Rf and the mask film 159Rf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Rf. The substrate temperature when forming the protective film 158Rf and the mask film 159Rf is typically 100° C. or higher and 200° C. or lower, preferably 100° C. or higher and 150° C. or lower, and more preferably 100° C. or higher and 120° C. or lower.

[0122] It is preferable that the protective film 158Rf and the mask film 159Rf be made of a film that can be removed by wet etching or dry etching.

[0123] The protective film 158Rf formed in a position close to the organic compound film 103Rf is preferably formed using a formation method that causes less damage to the organic compound film 103Rf than the mask film 159Rf. For example, the ALD method (Atomic Layer Deposition method) or the vacuum evaporation method is more preferable than the sputtering method.

[0124] The protective film 158Rf and the mask film 159Rf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0125] The protective film 158Rf and the mask film 159Rf can each be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. It is particularly preferable to use a low-melting-point material such as aluminum or silver. Using a metal material capable of blocking ultraviolet rays for one or both of the protective film 158Rf and the mask film 159Rf is preferable because it can prevent the organic compound film 103Rf from being irradiated with ultraviolet rays during pattern exposure, thereby suppressing deterioration of the organic compound film 103Rf.

[0126] Furthermore, the protective film 158Rf and the mask film 159Rf may each be made of a metal oxide such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), or indium tin oxide containing silicon.

[0127] In addition, in the above metal oxide, an element M (wherein M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used instead of gallium.

[0128] The protective film 158Rf and the mask film 159Rf are preferably made of a semiconductor material such as silicon or germanium, which has a high affinity with the semiconductor manufacturing process. Alternatively, compounds containing the semiconductor materials may be used.

[0129] Furthermore, various inorganic insulating films can be used for the protective film 158Rf and the mask film 159Rf. In particular, oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Rf than nitride insulating films. Nitride insulating films are preferable because they are dense and have high barrier properties. Silicon nitride films are particularly preferable as nitride insulating films.

[0130] 4C, a resist mask 190R is formed by applying a photosensitive material (photoresist) and then exposing and developing it.

[0131] The resist mask 190R is provided in a position overlapping with the conductive layer 152R. The resist mask 190R is preferably provided also in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the display device.

[0132] 4D , a resist mask 190R is used to remove part of the mask film 159Rf to form a mask layer 159R. The mask layer 159R remains on the conductive layer 152R and the conductive layer 152C. Then, the resist mask 190R is removed. Then, using the mask layer 159R as a mask (also referred to as a hard mask), a part of the protective film 158Rf is removed to form a protective layer 158R.

[0133] By using the wet etching method, damage to the organic compound film 103Rf during processing of the protective film 158Rf and the mask film 159Rf can be reduced compared to when using the dry etching method. When using the wet etching method, it is preferable to use an acid aqueous solution such as a developing solution, an alkaline aqueous solution such as a tetramethylammonium hydroxide (TMAH) aqueous solution, or a chemical solution using dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture of these.

[0134] Furthermore, when dry etching is used to process the protective film 158Rf, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0135] The resist mask 190R can be removed in the same manner as the resist mask 191.

[0136] 4D, the organic compound film 103Rf is processed to form the organic compound layer 103R. For example, the mask layer 159R and the protective layer 158R are used as a hard mask to remove a portion of the organic compound film 103Rf, thereby forming the organic compound layer 103R.

[0137] 4D, a laminated structure of the organic compound layer 103R, the protective layer 158R, and the mask layer 159R remains on the conductive layer 152R, and the conductive layers 152G and 152B are exposed.

[0138] Note that FIG. 1B illustrates a shape in which the end of the organic compound layer 103R is located inside the end of the conductive layers 151R and 152R, which are the first electrodes. However, in the figures explaining the manufacturing method from FIG. 4D onward, a different embodiment is illustrated in which the end of the organic compound layer 103R is processed into a shape that extends beyond and covers the end of the conductive layers 151R and 152R, which are the first electrodes.

[0139] The organic compound film 103Rf is preferably processed by anisotropic etching, particularly anisotropic dry etching, or wet etching may be used.

[0140] When dry etching is used, deterioration of the organic compound film 103Rf can be suppressed by not using a gas containing oxygen as the etching gas.

[0141] Alternatively, a gas containing oxygen may be used as the etching gas. By using an etching gas containing oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This makes it possible to suppress damage to the organic compound film 103Rf. Furthermore, problems such as adhesion of reaction products generated during etching can be suppressed.

[0142] When dry etching is used, for example, H ２ , C.F. ４ , C ４ F ８ , SF ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing one or more of Group 18 elements such as He and Ar as the etching gas. Alternatively, it is preferable to use a gas containing one or more of these elements and oxygen as the etching gas. Alternatively, oxygen gas may be used as the etching gas.

[0143] Subsequently, as shown in FIG. 5A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed.

[0144] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Rf.

[0145] 5A, a protective film 158Gf and a mask film 159Gf are formed in this order. Then, a resist mask 190G is formed. The materials and forming methods of the protective film 158Gf and the mask film 159Gf are the same as those applicable to the protective film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190G are the same as those applicable to the resist mask 190R.

[0146] The resist mask 190G is preferably provided in a position overlapping with the conductive layer 152G.

[0147] Next, as shown in FIG. 5B , a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. Next, using the mask layer 159G as a mask, a portion of the protective film 158Gf is removed to form a protective layer 158G. Next, the organic compound film 103Gf is processed to form an organic compound layer 103G. As a result, as shown in FIG. 5B , a stacked structure of the organic compound layer 103G, the protective layer 158G, and the mask layer 159G remains on the conductive layer 152G. Furthermore, the mask layer 159R and the conductive layer 152B are exposed.

[0148] Subsequently, as shown in FIG. 5C, an organic compound film 103Bf is formed.

[0149] The organic compound film 103Bf can be formed by the same method as that used to form the organic compound film 103Rf.

[0150] 5C, a protective film 158Bf and a mask film 159Bf are formed in this order. Then, a resist mask 190B is formed. The materials and forming methods of the protective film 158Bf and the mask film 159Bf are the same as those applicable to the protective film 158Rf and the mask film 159Rf. The materials and forming methods of the resist mask 190B are the same as those applicable to the resist mask 190R.

[0151] The resist mask 190B is provided in a position overlapping with the conductive layer 152B.

[0152] 5D, a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B preferably remains on the conductive layer 152B. The resist mask 190B is then removed. The mask layer 159B is then used as a mask to remove a portion of the protective film 158Bf to form a protective layer 158B. The organic compound film 103Bf is then processed to form the organic compound layer 103B. For example, the mask layer 159B and the protective layer 158B are used as hard masks to remove a portion of the organic compound film 103Bf to form the organic compound layer 103B.

[0153] 5D, a laminated structure of the organic compound layer 103B, the protective layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the mask layers 159R and 159G are exposed.

[0154] It is preferable that the side surfaces of the organic compound layers 103R, 103G, and 103B are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces be 60 degrees or more and 90 degrees or less.

[0155] As described above, the distance between adjacent pairs of the organic compound layers 103R, 103G, and 103B formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103R, 103G, and 103B. By narrowing the distance between the island-shaped organic compound layers in this manner, a display device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Note that the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0156] Subsequently, as shown in FIG. 6A, it is preferable to remove the mask layers 159R, 159G, and 159B.

[0157] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layer 103 during the mask layer removal can be reduced compared to when a dry etching method is used.

[0158] The mask layer may also be removed by dissolving it in a polar solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0159] After removing the mask layer, a drying treatment may be performed to remove water adsorbed on the surface. For example, a heat treatment can be performed in an inert gas atmosphere or a reduced pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50°C or higher and 200°C or lower, preferably 60°C or higher and 150°C or lower, and more preferably 70°C or higher and 120°C or lower. A reduced pressure atmosphere is preferred because it allows drying at a lower temperature.

[0160] Subsequently, as shown in FIG. 6B, an insulating film 125af is formed.

[0161] Subsequently, as shown in FIG. 6C, an insulating film 127f, which will later become the first insulating layer 127, is formed on the insulating film 125af.

[0162] The substrate temperature when forming the insulating films 125af and 127f is preferably 40° C. or higher, 60° C. or higher, and 200° C. or lower, 180° C. or lower, 150° C. or lower, 120° C. or lower, or 100° C. or lower, respectively.

[0163] As the insulating film 125af, it is preferable to form an insulating film having a thickness of 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, 50 nm or less, 30 nm or less, or 20 nm or less within the above substrate temperature range.

[0164] The insulating film 125af is preferably formed by the PEALD method. The PEALD method is preferable because it allows the formation of a film with high coverage and high barrier properties. For example, silicon nitride is preferably formed as the insulating film 125af by the PEALD method. Alternatively, the insulating film 125af is preferably formed by forming an aluminum oxide film by the ALD method and then forming a silicon-based insulating film, particularly a silicon nitride film, by the PEALD method.

[0165] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0166] Next, exposure is performed to expose a part of the insulating film 127f to visible light or ultraviolet light. The first insulating layer 127 is formed in a region sandwiched between any two of the conductive layers 152R, 152G, and 152B, and around the conductive layer 152C.

[0167] The width of the first insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment mode, the first insulating layer 127 is processed to have a portion overlapping with the top surface of the conductive layer 151.

[0168] The light used for exposure preferably contains i-line (wavelength 365 nm), and may contain at least one of g-line (wavelength 436 nm) and h-line (wavelength 405 nm).

[0169] Subsequently, as shown in FIG. 7A, development is performed to remove the exposed area of ​​the insulating film 127f, thereby forming the first insulating layer 127.

[0170] Subsequently, the entire substrate is exposed to visible light or ultraviolet light, and the first insulating layer 127 is preferably irradiated with the light. The energy density of the exposure is 0 mJ / cm. ２ Larger than 800 mJ / cm ２ It is preferable that the dose is 0 mJ / cm or less. ２ Greater than 500 mJ / cm ２ It is more preferable to set the following: By performing such exposure after development, the transparency of the first insulating layer 127 can be improved in some cases. Furthermore, the substrate temperature required for heat treatment to deform the first insulating layer 127 into a tapered shape in a later step can be reduced in some cases.

[0171] Here, the presence of a barrier insulating layer against oxygen (e.g., an aluminum oxide film, a silicon nitride film, etc.) as the protective layer 158R, the protective layer 158G, the protective layer 158B, and the insulating film 125af can reduce the diffusion of oxygen into the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B.

[0172] Next, heat treatment (also referred to as post-baking) is performed. The heat treatment can transform the first insulating layer 127a into a first insulating layer 127 having tapered side surfaces (FIG. 7B). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., and more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. This can improve the adhesion between the first insulating layer 127 and the second insulating layer 125a and also improve the corrosion resistance of the first insulating layer 127.

[0173] By providing the protective layers 158R, 158G, and 158B and the insulating film 125af on the organic compound layers 103R, 103G, and 103B, the organic compound layers 103R, 103G, and 103B can be prevented from being damaged and deteriorated during the heat treatment, thereby improving the reliability of the light-emitting device.

[0174] Thereafter, an insulating film 125bf that will become the third insulating layer 125b is formed using the PEALD method (FIG. 7B).

[0175] Next, a photomask is formed on the insulating film 125bf, and etching is performed to remove portions of the insulating films 125af and 125bf. This forms a second insulating layer 125a below the first insulating layer 127 and a third insulating layer 125b above the first insulating layer 127 ( FIG. 7C ). At least in the pixel area, the contours of the second insulating layer 125a and the third insulating layer 125b are located outside the contour of the first insulating layer 127, and the second insulating layer 125a and the third insulating layer 125b are in contact at their ends that do not overlap with the first insulating layer 127. In other words, the first insulating layer 127 is sealed by the second insulating layer 125a and the third insulating layer 125b. In cross section, the ends of the first insulating layer 127 can also be said to be located inside the ends of the second insulating layer 125a and the third insulating layer 125b. In the following, this etching process may be referred to as the first etching process.

[0176] The first etching treatment can be performed by dry etching or wet etching. Note that it is preferable to form the insulating film 125af using the same material as the insulating film 125bf because the first etching treatment can be performed simultaneously.

[0177] When dry etching is performed, it is preferable to use a chlorine-based gas. ２ , BCl ３ , SiCl ４ , and CCl ４ The chlorine-based gas may be added with oxygen gas, hydrogen gas, helium gas, argon gas, or the like, either alone or in combination.

[0178] The dry etching apparatus may be a dry etching apparatus having a high-density plasma source, such as an inductively coupled plasma (ICP) etching apparatus, or a capacitively coupled plasma (CCP) etching apparatus having parallel plate electrodes.

[0179] Furthermore, the first etching treatment is preferably performed by wet etching. Using the wet etching method can reduce damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B compared to using the dry etching method. For example, the wet etching can be performed using an alkaline solution. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. Alternatively, an acid solution containing fluoride can also be used. In this case, the wet etching can be performed by the paddle method. Note that if the insulating film 125af is formed using the same material as the insulating film 125bf, the first etching treatment can be performed simultaneously, which is preferable.

[0180] In the first etching process, it is preferable to select an etching method that can obtain a selectivity between the protective layers 158R, 158G, and 158B and the insulating films 125af and 125bf.

[0181] 7B , after post-baking, a photomask may be formed, the insulating film 125af may be etched, and the second insulating layer 125a may be formed. After that, the insulating film 125bf may be formed, a photomask may be formed, and etching may be performed to form the third insulating layer 125b. In this way, the step may be reduced, and the coverage of the common electrode 155 to be formed later may be improved.

[0182] 8A , an etching process is performed using the second insulating layer 125a and the third insulating layer 125b as a mask to remove parts of the protective layer 158R, the protective layer 158G, and the protective layer 158B. As a result, openings are formed in the protective layer 158R, the protective layer 158G, and the protective layer 158B, respectively, and the top surfaces of the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, and the conductive layer 152C are exposed. Note that, hereinafter, this etching process may be referred to as a second etching process.

[0183] It is preferable that the first insulating layer 127 is entirely covered with the second insulating layer 125a and the third insulating layer 125b.

[0184] The second etching process is performed by wet etching. By using wet etching, damage to the organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B can be reduced compared to when dry etching is used. Wet etching can be performed using, for example, an alkaline solution or an acidic solution. An aqueous solution is preferably used so that the organic compound layer 103 does not dissolve.

[0185] 8B , a common electrode 155 is formed on the organic compound layer 103R, the organic compound layer 103G, the organic compound layer 103B, the conductive layer 152C, and the first insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum evaporation. In this case, as shown in FIG. 1 , the organic compound layer 103 may be formed as a stacked structure of the EL layer 104 and the EL layer 105, and the common electrode 155 may be formed thereon.

[0186] 8C, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0187] Subsequently, the substrate 120 is attached onto the protective layer 131 using the resin layer 122, whereby a display device can be manufactured.

[0188] As described above, in the manufacturing method of a display device according to one embodiment of the present invention, the island-shaped organic compound layers 103R, 103G, and 103B are formed by forming films over the entire surface and then processing them, rather than using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution display device or a display device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103R, 103G, and 103B can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a display device with extremely high contrast. Furthermore, even in a display device including tandem light-emitting devices manufactured by photolithography, a display device with excellent characteristics can be provided.

[0189] The structure of this embodiment mode can be used in appropriate combination with other structures.

[0190] In this embodiment, the configuration of an organic EL device, which is an organic semiconductor device having an EL layer as an organic semiconductor layer, will be described with reference to Fig. 9. The organic EL device is an organic semiconductor device including a configuration including an EL layer having a light-emitting layer between a first electrode 101 and a second electrode 102.

[0191] One of the first electrode 101 and the second electrode 102 functions as an anode, and the other functions as a cathode. Fig. 9 illustrates an example in which the first electrode 101 is the anode.

[0192] The anode is preferably formed using a metal, alloy, conductive compound, or mixture thereof having a large work function (specifically, 4.0 eV or more). Specific examples include indium oxide-tin oxide (ITO), indium oxide-tin oxide containing silicon or silicon oxide (ITSO), indium oxide-zinc oxide, and indium oxide containing tungsten oxide and zinc oxide (IWZO). These conductive metal oxide films are usually formed by sputtering, but may also be formed by applying a sol-gel method. As an example of a fabrication method, indium oxide-zinc oxide can be formed by sputtering using a target in which 1 to 20 wt % of zinc oxide is added to indium oxide. Indium oxide containing tungsten oxide and zinc oxide (IWZO) can also be formed by sputtering using a target containing 0.5 to 5 wt % tungsten oxide and 0.1 to 1 wt % zinc oxide relative to indium oxide. Other materials that can be used for the anode include, for example, gold (Au), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu), palladium (Pd), titanium (Ti), aluminum (Al), or nitrides of metal materials (e.g., titanium nitride). A layer formed by stacking these materials can also be used as the anode. For example, a film formed by stacking Al, Ti, and ITSO on Ti in this order is preferred because it has good reflectivity, is highly efficient, and enables high resolution of several thousand ppi. Graphene can also be used as the anode material. In addition, by using a composite material capable of forming the hole injection layer 111 described later as a layer in contact with the anode (typically, a hole injection layer), it becomes possible to select an electrode material regardless of the work function.

[0193] The hole injection layer 111 is provided in contact with the anode and has a function of facilitating injection of holes into the organic compound layer 103. The hole injection layer 111 is made of phthalocyanine (abbreviation: H ２phthalocyanine compounds or complex compounds such as 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB) and 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), or polymers such as poly(3,4-ethylenedioxythiophene) / (polystyrenesulfonic acid) (abbreviation: PEDOT / PSS).

[0194] The hole injection layer 111 may be formed using a substance having electron acceptor properties. Examples of the substance having electron acceptor properties include organic compounds having an electron-withdrawing group (such as a halogen group or a cyano group), such as 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F4-TCNQ), chloranil, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviation: HAT-CN), 1,3,4,5,7,8-hexafluorotetracyano-naphthoquinodimethane (abbreviation: F6-TCCNNQ), and 2-(7-dicyanomethylene-1,3,4,5,6,8,9,10-octafluoro-7H-pyren-2-ylidene)malononitrile. In particular, compounds in which an electron-withdrawing group is bonded to a fused aromatic ring having a plurality of heteroatoms, such as HAT-CN, are thermally stable and preferred. Also, [3]radialene derivatives having an electron-withdrawing group (especially a halogen group such as a fluoro group, a cyano group, etc.) are preferred because they have very high electron-accepting properties, and specific examples thereof include α,α',α''-1,2,3-cyclopropanetriylidenetris[4-cyano-2,3,5,6-tetrafluorobenzeneacetonitrile], α,α',α''-1,2,3-cyclopropanetriylidenetris[2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)benzeneacetonitrile], and α,α',α''-1,2,3-cyclopropanetriylidenetris[2,3,4,5,6-pentafluorobenzeneacetonitrile]. In addition to the organic compounds described above, transition metal oxides such as molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide can also be used as electron acceptor materials.

[0195] The hole-injection layer 111 is preferably formed using a composite material containing the above-mentioned material having an electron acceptor property and an organic compound having a hole-transport property.

[0196] As the organic compound having a hole transport property used in the composite material, various organic compounds can be used, such as aromatic amine compounds, heteroaromatic compounds, aromatic hydrocarbons, and polymer compounds (oligomers, dendrimers, polymers, etc.). −６ cm ２ / Vs or more. The organic compound having hole transport properties used in the composite material is preferably a compound having a fused aromatic hydrocarbon ring or a π-electron-rich heteroaromatic ring. As the fused aromatic hydrocarbon ring, an anthracene ring, a naphthalene ring, or the like is preferred. As the π-electron-rich heteroaromatic ring, a fused aromatic ring containing at least one of a pyrrole skeleton, a furan skeleton, and a thiophene skeleton in the ring is preferred, and specifically, a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the above ring is preferred.

[0197] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with a long lifetime.

[0198] Specific examples of the organic compound having hole transport properties as described above include N-(4-biphenyl)-6,N-diphenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BnfABP), N,N-bis(4-biphenyl)-6-phenylbenzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf), 4,4′-bis(6-phenylbenzo[b]naphtho[1,2-d]furan-8-yl)-4″-phenyltriphenylamine (abbreviation: BnfBB1BP), N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP), and N,N-bis(4-biphenyl)benzylamine (abbreviation: BnfBB1BP). N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-6-amine (abbreviation: BBABnf(6)), N,N-bis(4-biphenyl)benzo[b]naphtho[1,2-d]furan-8-amine (abbreviation: BBABnf(8)), N,N-bis(4-biphenyl)benzo[b]naphtho[2,3-d]furan-4-amine (abbreviation: BBABnf(II)(4)), N,N-bis[4-(dibenzofuran-4-yl)phenyl]-4-amino-p-terphenyl (abbreviation: DBfBB1TP), N-[4-(dibenzothiophen-4-yl)phenyl]-4-amino-p-terphenyl] ]-N-phenyl-4-biphenylamine (abbreviation: ThBA1BP), 4-(2-naphthyl)-4',4''-diphenyltriphenylamine (abbreviation: BBAβNB), 4-[4-(2-naphthyl)phenyl]-4',4''-diphenyltriphenylamine (abbreviation: BBAβNBi), 4,4'-diphenyl-4''-(6;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβNB), 4,4'-diphenyl-4''-(7;1'-binaphthyl-2-yl)triphenylamine (abbreviation: BBAαNβ NB-03), 4,4'-diphenyl-4''-(7-phenyl)naphthyl-2-yltriphenylamine (abbreviation: BBAPβNB-03), 4,4'-diphenyl-4''-(6;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B), 4,4'-diphenyl-4''-(7;2'-binaphthyl-2-yl)triphenylamine (abbreviation: BBA(βN2)B-03), 4,4'-diphenyl-4''-(4;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB), 4,4'-Diphenyl-4''-(5;2'-binaphthyl-1-yl)triphenylamine (abbreviation: BBAβNαNB-02), 4-(4-biphenylyl)-4'-(2-naphthyl)-4''-phenyltriphenylamine (abbreviation: TPBiAβNB), 4-(3-biphenylyl)-4'-[4-(2-naphthyl)phenyl]-4''-phenyltriphenylamine (abbreviation: mTPBiAβNBi), 4-(4-biphenylyl)-4'-[4-(2-naphthyl)phenyl] [4'-(3-phenyl-9H-carbazol-9-yl)biphenyl-4''-[ ... N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-N-[4-(1-naphthyl)phenyl]-9,9′-spirobi[9H-fluorene]-2-amine (abbreviation: PCBNBSF), N,N- Bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: BBASF), N,N-bis(biphenyl-4-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: BBASF(4)), N-(biphenyl-2-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)-9,9'-spirobi[9H-fluorene]-4-amine (abbreviation: oFBiSF), N-(biphenyl-4-yl)-N-(9,9-dimethyl-9H-fluoren-2-yl)dibenzofuran-4-amine (abbreviation: FrBiF), N-[4-(1-naphthyl)phenyl]-N-[3-(6-phenyldibenzofuran-4-yl)phenyl]-1-naphthylamine (abbreviation: mPDBfBNBN), 4-phenyl-4'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4' -[4-(9-phenylfluoren-9-yl)phenyl]triphenylamine (abbreviation: BPAFLBi), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'- Di(1-naphthyl)-4"-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF), N-(biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-fluorene-2-amine (abbreviation: PCBBiF), N,N-bis( 9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-4-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-3-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-2-amine, N,N-bis(9,9-dimethyl-9H-fluoren-2-yl)-9,9′-spirobi-9H-fluoren-1-amine, etc.

[0199] Other aromatic amine compounds that can be used as the material having hole transport properties include N,N'-di(p-tolyl)-N,N'-diphenyl-p-phenylenediamine (abbreviation: DTDPPA), 4,4'-bis[N-(4-diphenylaminophenyl)-N-phenylamino]biphenyl (abbreviation: DPAB), 4,4'-bis(N-{4-[N'-(3-methylphenyl)-N'-phenylamino]phenyl}-N-phenylamino)biphenyl (abbreviation: DNTPD), and 1,3,5-tris[N-(4-diphenylaminophenyl)-N-phenylamino]benzene (abbreviation: DPA3B).

[0200] By forming the hole injection layer 111, the hole injection property becomes good, and a light emitting device with a low driving voltage can be obtained.

[0201] Among substances having electron acceptor properties, organic compounds having electron acceptor properties are easy to use because they can be easily vapor-deposited and formed into a film.

[0202] The hole transport layer 112 is formed by containing an organic compound having a hole transport property. −６ cm ２ It is preferable that the material has a hole mobility of 1.0 V or more.

[0203] Examples of the material having a hole transport property include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), and 4-phenyl-3′- (9-Phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBANB), compounds having an aromatic amine skeleton such as 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF); 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP); 4,4'-di(N-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB); 9,9'-bis(biphenyl-4-yl)-3,3'-bi-9H-carbazole (abbreviation: BisBPCz), 9,9'-bis(biphenyl-3-yl)-3,3'-bi-9H-carbazole (abbreviation: BismBPCz), 9-(biphenyl-3-yl)-9'-(biphenyl-4-yl)-9H,9'H-3,3'-bicarbazole (abbreviation: mBPCCBP), 9-(2-naphthyl)-9'-phenyl-9H,9'H-3,3'-bicarbazole (abbreviation: βNCCP), 9-(3-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCmBP), 9-(4-biphenyl)-9'-(2-naphthyl)-3,3'-bi-9H-carbazole (abbreviation: βNCCBP), 9,9'-di-2-naphthyl-3,3'-9H,9'H-bicarbazole (abbreviation: BisβNCz), 9-( 2-naphthyl)-9'-[1,1':4',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-3-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-5'-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-[1,1':4',1"-terphenyl]-4-yl-3,3'-9H,9'H- Bicarbazole, 9-(2-naphthyl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, 9-(2-naphthyl)-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-phenyl-9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole (abbreviation: PCCzTp), 9,9'-bis(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(4-biphenyl)- compounds having a carbazole skeleton such as 9'-(triphenylen-2-yl)-3,3'-9H,9'H-bicarbazole, 9-(triphenylen-2-yl)-9'-[1,1':3',1"-terphenyl]-4-yl-3,3'-9H,9'H-bicarbazole, and 9-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]phenanthrene (abbreviation: PcPPn); 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II);Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton and compounds having a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. Note that the substances listed as the materials having hole transport properties used in the composite material of the hole injection layer 111 can also be suitably used as materials for forming the hole transport layer 112.

[0204] The light-emitting layer 113 is a layer containing a light-emitting substance, and preferably contains a light-emitting substance and a host material. The light-emitting layer may also contain other materials. Alternatively, the light-emitting layer may be a stack of two layers with different compositions.

[0205] The luminescent material may be a fluorescent material, a phosphorescent material, a material exhibiting thermally activated delayed fluorescence (TADF), or any other luminescent material.

[0206] Examples of materials that can be used as fluorescent materials in the light-emitting layer include the following: In addition, fluorescent materials other than these can also be used.

[0207] 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2'-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4'-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2'-bipyridine (abbreviation: PAPP2BPy), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine )phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-bis[4-(9H-carbazol-9-yl)phenyl]-N,N'-diphenylstilbene-4,4'-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)-4'-(10-phenyl-9-anthryl)triphenylamine (abbreviation: YGAPA), 4-(9H-carbazol-9-yl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-( 10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), 4-(10-phenyl-9-anthryl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis(N,N',N'-triphenyl-1,4-phenylenediamine) (abbreviation: DPABPA), N,9 -diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: 2PAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), Coumarin 30, N-(9,10-diphenyl-2-anthryl)-N,9-Diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA) , 9,10-bis(biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyra N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhTD), Name: p-mPhAFD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), N,N'-diphenyl-N,N'-(1,6-pyren-diyl)bis[(6-phenylbenzo[b ]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03), 3,10-bis[N-(9-phenyl-9H-carbazol-2-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10PCA2Nbf(IV)-02), and 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviation: 3,10FrA2Nbf(IV)-02). In particular, condensed aromatic diamine compounds typified by pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 are preferred because they have high hole-trapping properties and excellent luminous efficiency or reliability. ,

[0208] Also, 5,9-diphenyl-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene (abbreviation: DABNA1), 9-(diphenyl-3-yl)-N,N,5,11-tetraphenyl-5,9-dihydro-5,9-diaza-13b-boranaphtho[3,2,1-de]anthracene-3-amine (abbreviation: DABNA2), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-N,N-diphenyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborine -7-amine (abbreviation: DPhA-tBu4DABNA), 2,12-di(tert-butyl)-N,N,5,9-tetra(4-tert-butylphenyl)-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin-7-amine (abbreviation: tBuDPhA-tBu4DABNA), 2,12-di(tert-butyl)-5,9-di(4-tert-butylphenyl)-7-methyl-5H,9H-[1,4]benzazaborino[2,3,4-kl]phenazaborin (abbreviation: Me-tBu4DABNA), N ７ , N ７ , N １３ , N １３ Condensed heteroaromatic compounds containing nitrogen and boron, such as 5,9,11,15-octaphenyl-5H,9H,11H,15H-[1,4]benzazaborino[2,3,4-kl][1,4]benzazaborino[4',3',2':4,5][1,4]benzazaborino[3,2-b]phenazaborine-7,13-diamine (abbreviation: v-DABNA), and 2-(4-tert-butylphenyl)benz[5,6]indolo[3,2,1-jk]benzo[b]carbazole (abbreviation: tBuPBibc), in particular compounds having a diazaboranaphthoanthracene skeleton, can be suitably used because they have a narrow emission spectrum and can emit blue light with good color purity.

[0209] In addition to these, 9,10,11-tris[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-G), 9,11-bis[3,6-bis(1,1-dimethylethyl)-9H-carbazolyl-9-yl]-2,5,15,18-tetrakis(1,1-dimethylethyl)indolo[3,2,1-de]indolo[3',2',1':8,1][1,4]benzazaborino[2,3,4-kl]phenazaborine (abbreviation: BBCz-Y) and the like can be preferably used.

[0210] When a phosphorescent material is used as the light-emitting material in the light-emitting layer, examples of materials that can be used include the following.

[0211] Tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ organometallic iridium complexes having a 4H-triazole skeleton, such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ organometallic iridium complexes having a 1H-triazole skeleton, such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３ organometallic iridium complexes having an imidazole skeleton, such as tris(2-[1-{2,6-bis(1-methylethyl)phenyl}-1H-imidazol-2-yl-κN]-4-cyanophenyl-κC) (abbreviation: CNImIr), tris[(6-tert-butyl-3-phenyl-2H-imidazo[4,5-b]pyrazin-1-yl-κC)phenyl-κC]iridium(III) (abbreviation: [Ir(cb) ３ organometallic complexes having a benzimidazolidene skeleton, such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ]iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Organometallic iridium complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, such as iridium(III) acetylacetonate (abbreviation: FIracac), are examples of such compounds that exhibit blue phosphorescence and have an emission peak in the wavelength range of 450 nm to 520 nm.

[0212] Also, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm)２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２ (acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(2-phenylpyridinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq)２ (acac)]), [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridyl-κN)phenyl-κ]iridium(III) (abbreviation: [Ir(5mppy-d ３ ) ２ (mbfpypy-d ３ ) )]), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy) ２ (mbfpypy-d ３ ) ]), [2-(4-d3-methyl-5-phenyl-2-pyridinyl-κN2)phenyl-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN2)phenyl-κC]iridium(III) (abbreviation: [Ir(5mppy-d ３ ) ２ (mdppy-d ３ ) )]), [2-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy) ２ (mbfpypy)]), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium (abbreviation: [Ir(ppy) ２ In addition to organometallic iridium complexes having a pyridine skeleton, such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)]), ３ These compounds mainly exhibit green phosphorescence, with an emission peak in the wavelength range of 500 nm to 600 nm. Organometallic iridium complexes having a pyrimidine skeleton are particularly preferred because they are remarkably excellent in reliability and luminous efficiency.

[0213] Also, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm)２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), bis[4,6-di(naphthalen-1-yl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(dpm) ２ organometallic iridium complexes having a pyrimidine skeleton, such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ organometallic iridium complexes having a pyrazine skeleton, such as tris(1-phenylisoquinolinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ (acac)]), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[7-(1-methylethyl)-1-isoquinolinyl-κN]phenyl-κC]iridium(III), (3,7-diethyl-4,6-nonanedionato-κO4,κO6)bis[2,4-dimethyl-6-[5-(1-methylethyl)-2-quinolinyl-κN]phenyl-κC]iridium(III). In addition to organometallic iridium complexes having a pyridine skeleton such as [ru-κC]iridium(III), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: PtOEP), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM) ３(Phen)]), tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３ Examples of rare earth metal complexes include iridium complexes such as iridium complexes containing pyrazine skeletons and iridium complexes containing iridium ions. These compounds exhibit red phosphorescence and have an emission peak in the wavelength range of 600 nm to 700 nm. Organometallic iridium complexes containing pyrazine skeletons exhibit red emission with good chromaticity.

[0214] In addition to the phosphorescent compounds described above, known phosphorescent compounds may be selected and used.

[0215] Examples of TADF materials that can be used include fullerene and its derivatives, acridine and its derivatives, and eosin derivatives. Other examples include metal-containing porphyrins containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (SnF) represented by the following structural formula: ２ (Proto IX)), mesoporphyrin-tin fluoride complex (SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (SnF ２ (OEP)), etioporphyrin-tin fluoride complex (SnF ２ (Etio I)), octaethylporphyrin-platinum chloride complex (PtCl ２ OEP) and the like.

[0216]

[0217] Further, 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 9-(4,6-diphenyl-1,3,5-triazin-2-yl)-9′-phenyl-9H,9′H-3,3′-bicarbazole (abbreviation: PCCzTzn), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxazin-10-yl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), and Heterocyclic compounds having one or both of a π-electron rich heteroaromatic ring and a π-electron deficient heteroaromatic ring, such as 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), and 10-phenyl-10H,10′H-spiro[acridine-9,9′-anthracene]-10′-one (abbreviation: ACRSA), can also be used. The heterocyclic compound has a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring, and therefore has high electron transport and hole transport properties, and is therefore preferred. Among the skeletons having a π-electron-deficient heteroaromatic ring, pyridine skeleton, diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), and triazine skeleton are preferred because they are stable and reliable. In particular, benzofuropyrimidine skeleton, benzothienopyrimidine skeleton, benzofuropyrazine skeleton, and benzothienopyrazine skeleton are preferred because they have high electron acceptor properties and are reliable. Furthermore, among the skeletons having a π-electron-rich heteroaromatic ring, acridine skeleton, phenoxazine skeleton, phenothiazine skeleton, furan skeleton, thiophene skeleton, and pyrrole skeleton are preferred because they are stable and reliable.The furan skeleton is preferably a dibenzofuran skeleton, and the thiophene skeleton is preferably a dibenzothiophene skeleton. Furthermore, the pyrrole skeleton is particularly preferably an indole skeleton, a carbazole skeleton, an indolocarbazole skeleton, a bicarbazole skeleton, or a 3-(9-phenyl-9H-carbazole-3-yl)-9H-carbazole skeleton. Furthermore, in a substance in which a π-electron-rich heteroaromatic ring and a π-electron-deficient heteroaromatic ring are directly bonded, the electron-donating property of the π-electron-rich heteroaromatic ring and the electron-accepting property of the π-electron-deficient heteroaromatic ring are both enhanced, resulting in S. １ Level and T １ This is particularly preferred because the energy difference between the levels is small, allowing thermally activated delayed fluorescence to be obtained efficiently. Instead of the π-electron-deficient heteroaromatic ring, an aromatic ring bonded to an electron-withdrawing group such as a cyano group may be used. Furthermore, an aromatic amine skeleton, a phenazine skeleton, or the like can be used as the π-electron-rich skeleton. Furthermore, as the π-electron-deficient skeleton, a xanthene skeleton, a thioxanthene dioxide skeleton, an oxadiazole skeleton, a triazole skeleton, an imidazole skeleton, an anthraquinone skeleton, a boron-containing skeleton such as phenylborane or boranthrene, an aromatic ring having a nitrile group or a cyano group such as benzonitrile or cyanobenzene, a heteroaromatic ring, a carbonyl skeleton such as benzophenone, a phosphine oxide skeleton, a sulfone skeleton, or the like can be used. In this way, a π-electron-deficient skeleton and a π-electron-rich skeleton can be used in place of at least one of the π-electron-deficient heteroaromatic ring and the π-electron-rich heteroaromatic ring.

[0218]

[0219] The TADF material is S １ Level and T １ This material has a small difference in energy level between triplet and singlet excitations, and has the ability to convert energy from triplet excitation to singlet excitation through reverse intersystem crossing. Therefore, triplet excitation energy can be upconverted to singlet excitation energy (reverse intersystem crossing) with a small amount of thermal energy, allowing for efficient generation of a singlet excited state. In addition, triplet excitation energy can be converted into luminescence.

[0220] In addition, an excited complex (also called an exciplex) that forms an excited state with two kinds of substances is S １ Level and T １ The difference between the triplet excitation energy and the singlet excitation energy is extremely small, and the TADF material functions as a TADF material that can convert triplet excitation energy into singlet excitation energy.

[0221] In addition, T １ The phosphorescence spectrum observed at low temperatures (for example, 77 K to 10 K) can be used as an index of the level. For the TADF material, a tangent line is drawn at the base of the fluorescence spectrum on the short wavelength side, and the energy of the wavelength of the extrapolated line is expressed as S １ The energy level is set as the level, and a tangent line is drawn at the base of the phosphorescence spectrum on the short wavelength side. The energy of the wavelength of the extrapolated line is T １ When the level is reached, the S １ Level and T １ The difference in level is preferably 0.3 eV or less, and more preferably 0.2 eV or less.

[0222] In addition, when a TADF material is used as a light-emitting material, the S １ The level is S of the TADF material. １ It is preferable that the T level of the host material is higher than that of the １ The level is the T １ It is preferable that the level is higher.

[0223] As the host material of the light-emitting layer, various carrier transport materials such as a material having an electron transport property and / or a material having a hole transport property, and the above-mentioned TADF material can be used.

[0224] The material having hole transport properties is preferably an organic compound having an amine skeleton or a π-electron-rich heteroaromatic ring skeleton. The π-electron-rich heteroaromatic ring is preferably a fused aromatic ring containing at least one of an acridine skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a furan skeleton, a thiophene skeleton, and a pyrrole skeleton, and specifically preferably a carbazole ring, a dibenzothiophene ring, or a ring in which an aromatic ring or a heteroaromatic ring is further fused to the carbazole ring, a dibenzothiophene ring, or the ring in which the π-electron-rich heteroaromatic ring is further fused to the carbazole ring, a dibenzothiophene ring, or the ring in which ... a dibenzothiophene ring, or the ring in which the carbazole ring, a dibenzothiophene ring, a dibenzothiophene ring, or the ring in which the carbazole ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene ring, a dibenzothiophene

[0225] Such organic compounds having hole-transporting properties preferably have a carbazole skeleton, a dibenzofuran skeleton, a dibenzothiophene skeleton, or an anthracene skeleton. In particular, aromatic amines having a substituent containing a dibenzofuran ring or a dibenzothiophene ring, aromatic monoamines having a naphthalene ring, or aromatic monoamines in which a 9-fluorenyl group is bonded to the nitrogen of the amine via an arylene group may be used. It is preferable that these organic compounds having hole-transporting properties are substances having an N,N-bis(4-biphenyl)amino group, since this allows the fabrication of light-emitting devices with a long lifetime.

[0226] Examples of such organic compounds include 4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB), N,N′-diphenyl-N,N′-bis(3-methylphenyl)-4,4′-diaminobiphenyl (abbreviation: TPD), N,N′-bis(9,9′-spirobi[9H-fluoren]-2-yl)-N,N′-diphenyl-4,4′-diaminobiphenyl (abbreviation: BSPB), and 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP), 4-phenyl-3'-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: mBPAFLP), 4-phenyl-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBA1BP), 4,4'-diphenyl-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBBi1BP), 4-(1-naphthyl)-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PC aromatic amines such as 4,4'-di(1-naphthyl)-4''-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBNBB), 9,9-dimethyl-N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]fluoren-2-amine (abbreviation: PCBAF), and N-phenyl-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9'-spirobi[9H-fluorene]-2-amine (abbreviation: PCBASF). compounds having a carbazole skeleton such as 1,3-bis(N-carbazolyl)benzene (abbreviation: mCP), 4,4'-di(N-carbazolyl)biphenyl (abbreviation: CBP), 3,6-bis(3,5-diphenylphenyl)-9-phenylcarbazole (abbreviation: CzTP), and 9,9'-diphenyl-9H,9'H-3,3'-bicarbazole (abbreviation: PCCP); compounds having a carbazole skeleton such as 4,4',4''-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II);Examples of suitable compounds include compounds having a thiophene skeleton, such as 8-diphenyl-4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III) and 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and compounds having a furan skeleton, such as 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II) and 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II). Among the compounds listed above, compounds having an aromatic amine skeleton or a carbazole skeleton are preferred because they have good reliability, high hole transport properties, and contribute to reducing driving voltage. In addition, the organic compounds listed as examples of materials having hole transport properties in the hole transport layer can also be used.

[0227] An example of a material having electron transport properties is bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２ Preferred are metal complexes such as bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO), and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ), as well as organic compounds having a π-electron-deficient heteroaromatic ring. Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include organic compounds having a heteroaromatic ring with a polyazole skeleton, organic compounds having a heteroaromatic ring with a pyridine skeleton, organic compounds having a heteroaromatic ring with a diazine skeleton, and organic compounds having a heteroaromatic ring with a triazine skeleton.

[0228] Among these, organic compounds containing a heteroaromatic ring having a diazine skeleton (pyrimidine skeleton, pyrazine skeleton, pyridazine skeleton), organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their high reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton have high electron transport properties and contribute to reducing driving voltage. In addition, benzofuropyrimidine skeletons, benzothienopyrimidine skeletons, benzofuropyrazine skeletons, and benzothienopyrazine skeletons are preferred because of their high electron acceptor properties and high reliability.

[0229] Examples of organic compounds having a π-electron-deficient heteroaromatic ring skeleton include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazole- organic compounds having an azole skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]-9H-carbazole (abbreviation: CO11), 2,2′,2″-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), and 4,4′-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs); )phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10 organic compounds containing a heteroaromatic ring having a pyridine skeleton, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3'-dibenzothiophen-4-yl)biphenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H- carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[ 3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl)] phenyl-3,3′-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PPm)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl ]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), organic compounds having a diazine skeleton such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan- 8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-6-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn-02), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn), 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6- Diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), 2-[3′-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3 Examples of suitable organic compounds include organic compounds containing a heteroaromatic ring with a triazine skeleton, such as 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (mBP-TPDBfTzn). Organic compounds containing a heteroaromatic ring with a diazine skeleton, organic compounds containing a heteroaromatic ring with a pyridine skeleton, and organic compounds containing a heteroaromatic ring with a triazine skeleton are preferred due to their high reliability. In particular, organic compounds containing a heteroaromatic ring with a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring with a triazine skeleton have high electron transport properties and contribute to reduced driving voltage.

[0230] The TADF materials that can be used as the host material can be the same as those listed above. When a TADF material is used as a host material, triplet excitation energy generated in the TADF material is converted into singlet excitation energy by reverse intersystem crossing, and the energy is further transferred to a light-emitting substance, thereby improving the luminous efficiency of the light-emitting device. In this case, the TADF material functions as an energy donor, and the light-emitting substance functions as an energy acceptor.

[0231] This is very effective when the luminescent material is a fluorescent luminescent material. １ The level is the S of the fluorescent material. １ It is preferable that the T of the TADF material is higher than the T level. １ The level is the S of the fluorescent material. １ Therefore, the T １ The level is the T １ It is preferable that the level is higher.

[0232] It is also preferable to use a TADF material that emits light that overlaps with the wavelength of the lowest-energy absorption band of the fluorescent material, since this allows for smooth transfer of excitation energy from the TADF material to the fluorescent material, resulting in efficient light emission.

[0233] Furthermore, in order to efficiently generate singlet excitation energy from triplet excitation energy through reverse intersystem crossing, it is preferable that carrier recombination occurs in the TADF material. It is also preferable that the triplet excitation energy generated in the TADF material does not transfer to the triplet excitation energy of the fluorescent material. To this end, it is preferable that the fluorescent material has a protecting group around the luminophore (the skeleton responsible for light emission) possessed by the fluorescent material. The protecting group is preferably a substituent without a π bond, and is preferably a saturated hydrocarbon. Specific examples include alkyl groups having 3 to 10 carbon atoms, substituted or unsubstituted cycloalkyl groups having 3 to 10 carbon atoms, and trialkylsilyl groups having 3 to 10 carbon atoms. It is even more preferable that the protecting group has multiple protecting groups. Substituents without a π bond have poor carrier transport function, so the distance between the TADF material and the luminophore of the fluorescent material can be increased without significantly affecting carrier transport or carrier recombination. Here, the luminophore refers to the atomic group (skeleton) responsible for light emission in the fluorescent material. The luminophore preferably has a skeleton having a π bond, preferably contains an aromatic ring, and preferably has a fused aromatic ring or a fused heteroaromatic ring. Examples of such luminophores include a phenanthrene skeleton, a stilbene skeleton, an acridone skeleton, a phenoxazine skeleton, a phenothiazine skeleton, a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, and a naphthobisbenzofuran skeleton. In particular, fluorescent materials having a naphthalene skeleton, an anthracene skeleton, a fluorene skeleton, a chrysene skeleton, a triphenylene skeleton, a tetracene skeleton, a pyrene skeleton, a perylene skeleton, a coumarin skeleton, a quinacridone skeleton, or a naphthobisbenzofuran skeleton are preferred because of their high fluorescence quantum yield.

[0234] When a fluorescent light-emitting substance is used as the light-emitting substance, a material having an anthracene skeleton is suitable as the host material. Using a substance having an anthracene skeleton as the host material for a fluorescent light-emitting substance makes it possible to realize an emitting layer with both excellent luminous efficiency and durability. As a substance having an anthracene skeleton used as the host material, a diphenylanthracene skeleton, particularly a substance having a 9,10-diphenylanthracene skeleton, is preferred because it is chemically stable. Furthermore, a host material having a carbazole skeleton is preferred because it enhances hole injection and transport properties. However, a host material containing a benzocarbazole skeleton in which a benzene ring is further condensed to carbazole is more preferred because its HOMO level is about 0.1 eV shallower than that of the carbazole skeleton, making it easier for holes to enter. In particular, a host material containing a dibenzocarbazole skeleton is preferred because its HOMO level is about 0.1 eV shallower than that of the carbazole skeleton, making it easier for holes to enter, and it also has excellent hole transport properties and high heat resistance. Therefore, a more preferable host material is a substance having both a 9,10-diphenylanthracene skeleton and a carbazole skeleton (or a benzocarbazole skeleton or a dibenzocarbazole skeleton). Note that, in view of the hole injection / transport property, a benzofluorene skeleton or a dibenzofluorene skeleton may be used instead of the carbazole skeleton.Examples of such substances include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl]benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4-(9-phenyl-9H-fluoren-9-yl)biphenyl-4′- 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo Examples include zo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtBImPBPhA), etc. In particular, CzPA, cgDBCzPA, 2mBnfPPA, and PCzPA are preferred choices because they exhibit very good properties.

[0235] The host material may be a mixture of a plurality of substances. When a mixture of host materials is used, it is preferable to mix a material having electron transport properties with a material having hole transport properties. By mixing a material having electron transport properties with a material having hole transport properties, the transport properties of the light-emitting layer 113 can be easily adjusted, and the recombination region can also be easily controlled. The weight ratio of the content of the material having hole transport properties to the material having electron transport properties may be 1:19 to 19:1 (material having hole transport properties:material having electron transport properties).

[0236] A phosphorescent material can be used as part of the mixed material. The phosphorescent material can be used as an energy donor that provides excitation energy to a fluorescent material when the fluorescent material is used as a light-emitting material.

[0237] Furthermore, these mixed materials may form an exciplex. It is preferable to select a combination that forms an exciplex that emits light that overlaps with the wavelength of the lowest-energy absorption band of the light-emitting material, because this allows for smooth energy transfer and efficient light emission. Furthermore, using this structure is also preferable because it reduces the driving voltage.

[0238] At least one of the materials forming the exciplex may be a phosphorescent material, which allows efficient conversion of triplet excitation energy into singlet excitation energy through reverse intersystem crossing.

[0239] As a combination of materials that efficiently form an exciplex, it is preferable that the HOMO level of the material having hole transport properties is equal to or higher than the HOMO level of the material having electron transport properties. Also, it is preferable that the LUMO level of the material having hole transport properties is equal to or higher than the LUMO level of the material having electron transport properties. Note that the LUMO level and HOMO level of the material can be derived from the electrochemical properties (reduction potential and oxidation potential) of the material measured by cyclic voltammetry (CV).

[0240] The formation of exciplexes can be confirmed, for example, by comparing the emission spectra of a material having hole transport properties, a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the phenomenon in which the emission spectrum of the mixed film is shifted to longer wavelengths than the emission spectra of each material (or has a new peak on the longer wavelength side). Alternatively, the formation of exciplexes can be confirmed by comparing the transient photoluminescence (PL) of a material having hole transport properties, the transient PL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing differences in transient response, such as the transient PL lifetime of the mixed film having a longer-lifetime component or a larger proportion of delayed components than the transient PL lifetimes of the individual materials. The above-mentioned transient PL may also be interpreted as transient electroluminescence (EL). In other words, the formation of exciplexes can also be confirmed by comparing the transient EL of a material having hole transport properties, the transient EL of a material having electron transport properties, and a mixed film obtained by mixing these materials, and observing the differences in transient response.

[0241] The electron transport layer 114 is a layer containing a substance having an electron transport property. The electron transport organic compound is an organic compound having an electron mobility of 1×10 or more at a square root of an electric field strength [V / cm] of 600. −７ cm ２ / Vs or more, preferably 1×10 −６ cm ２Substances having an electron mobility of .gtoreq..times ... Furthermore, a benzofuropyrimidine skeleton, a benzothienopyrimidine skeleton, a benzofuropyrazine skeleton, and a benzothienopyrazine skeleton are preferred because they have high acceptor properties and good reliability.

[0242] Examples of such organic compounds include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: C O11), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5-methylbenzoxazol-2-yl)stilbene (abbreviation: BzOs), and other organic compounds having an azole skeleton, such as 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3,5-tri[3-(3- pyridyl)phenyl]benzene (abbreviation: TmPyPB), bathophenanthroline (abbreviation: Bphen), bathocuproine (abbreviation: BCP), 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBphen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2-[3-(2-triphenylenyl)phenyl]-1,10-phenanthroline (abbreviation: mTpPPhen), 2-phenyl-9-(2-triphenylenyl)-1,10- organic compounds containing heteroaromatic rings with a pyridine skeleton, such as phenanthroline (abbreviation: Ph-TpPhen), 2-[4-(9-phenanthrenyl)-1-naphthalenyl]-1,10-phenanthroline (abbreviation: PnNPhen), and 2-[4-(2-triphenylenyl)phenyl]-1,10-phenanthroline (abbreviation: pTpPPhen); 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3-(3′-dibenzothiophen-4-yl)bi ...h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq), 2-[4'-(9-phenyl-9H-carbazol-3-yl)-3,1'-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 2-[4-(3,6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophene 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDBq-II), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pm DBtBPNfpr), 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mCzP2Pm), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 8-(biphenyl-4-yl)-4-[3 -(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 3,8-bis[3-(dibenzothiophen-4-yl)phenyl]benzofuro[2,3-b]pyrazine (abbreviation: 3,8mDBtP2Bfpr), 4,8-bis[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 4,8mDBtP2Bfpm), 8-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[3,2-d]pyrimidine (abbreviation: 8mDBtBPNfpm), 8-[(2,2'-binaphthalen)-6-yl]-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d]pyrimidine (abbreviation: 8(βN2)-4mDBtPBfpm), 2,2'-(pyridine-2,6-diyl)bis(4-phenylbenzo[h]quinazoline) (abbreviation: 2,6(P-Bqn)2Py), 2,2'-(pyridine-2,6-diyl)bis{4-[4-(2-naphthyl)phenyl]-6-phenylpyrimidine} (abbreviation: 2,6(NP-PP m)2Py), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), 7-[4-(9-phenyl-9H-carbazole- organic compounds having a diazine skeleton such as 2-(biphenyl-4-yl)-4-phenyl-6-(9,9'-spirobi[9H-fluoren-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn), and 2-{3-[3-(benzo[b]naphtho[1,2-d]furan-8-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mBnfBPTzn). 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-{3-[3-(dibenzothiophen-4-yl)phenyl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: mDBtBPTzn ), 2,4,6-tris[3'-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine (abbreviation: TmPPPyTz), 2-[3-(2,6-dimethyl-3-pyridinyl)-5-(9-phenanthrenyl)phenyl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mPn-mDMePyPTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole 2-[3'-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-phenyl-9H-carbazole (abbreviation: PCDBfTzn), 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}- Among organic compounds containing heteroaromatic rings having a triazine skeleton, such as {ranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), preferred are organic compounds that do not contain fused aromatic rings consisting of only six-membered rings, or organic compounds that do not have a structure in which two or more adjacent six-membered aromatic hydrocarbon rings are fused, a structure in which two or more adjacent six-membered heteroaromatic rings are fused, or a structure in which one or more adjacent six-membered aromatic hydrocarbon rings and one or more adjacent six-membered heteroaromatic rings are fused.

[0243] Among them, organic compounds containing a heteroaromatic ring having a diazine skeleton, organic compounds containing a heteroaromatic ring having a pyridine skeleton, and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because of their excellent reliability. In particular, organic compounds containing a heteroaromatic ring having a diazine (pyrimidine or pyrazine) skeleton and organic compounds containing a heteroaromatic ring having a triazine skeleton are preferred because they have high electron transport properties and contribute to reducing driving voltage. In particular, organic compounds having a phenanthroline skeleton such as mTpPPhen, PnNPhen, and mPPhen2P are preferred, and organic compounds having a phenanthroline dimer structure such as mPPhen2P are more preferred because of their excellent stability.

[0244] The electron transport layer 114 may have a stacked structure. A layer in the electron transport layer 114 having a stacked structure that is in contact with the light-emitting layer 113 may function as a hole-blocking layer. When the electron transport layer in contact with the light-emitting layer is made to function as a hole-blocking layer, it is preferable to use a material whose HOMO level is deeper than the HOMO level of a material contained in the light-emitting layer 113 by 0.5 eV or more.

[0245] The electron-injection layer 115 may be a layer containing a compound or complex of an alkali metal or alkaline earth metal, such as lithium fluoride, 8-hydroxyquinolinatolithium (abbreviation: Liq), or a mixed material of lithium fluoride and ytterbium, a mixture thereof, or 1,1′-pyridine-2,6-diyl-bis(1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine) (abbreviation: hpp2Py). The electron-injection layer 115 may be a layer containing any of the above-mentioned substances in a layer made of a substance having an electron-transporting property.

[0246] Alternatively, a charge generation layer 116 may be provided instead of the electron injection layer 115 ( FIG. 9B ). The charge generation layer 116 is a layer capable of injecting holes into a layer in contact with the cathode side of the charge generation layer 116 and electrons into a layer in contact with the anode side of the charge generation layer 116 by applying a potential thereto. The charge generation layer 116 includes at least a P-type layer 117. The P-type layer 117 is preferably formed using the composite material listed above as a material that can be used to form the hole injection layer 111. The P-type layer 117 may also be formed by stacking a film containing an acceptor material and a film containing a hole transport material, both of which are materials that can be used to form the composite material. By applying a potential to the P-type layer 117, electrons are injected into the electron transport layer 114 and holes are injected into the cathode, thereby operating the organic EL device. Furthermore, since the organic compound according to one embodiment of the present invention has a low refractive index, its use in the P-type layer 117 allows for the production of an organic EL device with excellent external quantum efficiency.

[0247] It is preferable that the charge generating layer 116 be provided with either or both of an electron relay layer 118 and an electron injection buffer layer 119 in addition to the P-type layer 117 .

[0248] The electron relay layer 118 contains at least a substance having electron transport properties, and has the function of preventing interaction between the electron injection buffer layer 119 and the P-type layer 117 and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer 118 is preferably between the LUMO level of the acceptor substance in the P-type layer 117 and the LUMO level of the substance contained in the layer in contact with the charge generation layer 116 in the electron transport layer 114. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer 118 is -5.0 eV or more, preferably -5.0 eV or more and -3.0 eV or less. Note that the substance having electron transport properties used in the electron relay layer 118 includes phthalocyanine (abbreviation: H ２ It is preferable to use a phthalocyanine material such as copper phthalocyanine (abbreviated as CuPc) or zinc phthalocyanine (abbreviated as ZnPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.

[0249] The electron injection buffer layer 119 can be made of a material with high electron injection properties, such as an alkali metal, an alkaline earth metal, a rare earth metal, or a compound thereof (an alkali metal compound (including an oxide such as lithium oxide, a halide such as lithium fluoride, or a carbonate such as lithium carbonate or cesium carbonate), an alkaline earth metal compound (including an oxide, a halide, or a carbonate), or a rare earth metal compound (including an oxide, a halide, or a carbonate)).

[0250] When the electron-injection buffer layer 119 is formed to contain a substance having electron-transporting properties and a donor substance, examples of the donor substance include alkali metals, alkaline earth metals, rare earth metals, and compounds thereof (alkali metal compounds (including oxides such as lithium oxide, halides such as lithium fluoride, and carbonates such as lithium carbonate and cesium carbonate), alkaline earth metal compounds (including oxides, halides, and carbonates), and rare earth metal compounds (including oxides, halides, and carbonates)), as well as organic compounds such as tetrathianaphthacene (abbreviation: TTN), nickelocene, and decamethylnickelocene. Note that the substance having electron-transporting properties can be formed using the same material as the material constituting the electron-transporting layer 114 described above.

[0251] The second electrode 102 is an electrode including a cathode. The second electrode 102 may have a laminated structure, in which case the layer in contact with the organic compound layer 103 functions as the cathode. Materials that form the cathode include metals, alloys, electrically conductive compounds, and mixtures thereof, each having a small work function (specifically, 3.8 eV or less). Specific examples of such cathode materials include alkali metals such as lithium (Li) or cesium (Cs), elements belonging to Group 1 or Group 2 of the periodic table such as magnesium (Mg), calcium (Ca), and strontium (Sr), and alloys (MgAg, AlLi) and compounds (lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF), etc.) containing these elements. ２However, by providing the electron injection layer 115 or a thin film of the above-mentioned material having a small work function between the second electrode 102 and the electron transport layer, various conductive materials such as Al, Ag, ITO, indium oxide-tin oxide containing silicon or silicon oxide can be used as the cathode regardless of the magnitude of the work function.

[0252] Note that when the second electrode 102 is formed using a material that is transparent to visible light, a light-emitting device that emits light from the second electrode 102 side can be obtained.

[0253] These conductive materials can be formed into films by dry methods such as vacuum deposition or sputtering, inkjet methods, spin coating methods, etc. Alternatively, they may be formed by wet methods using a sol-gel method, or by wet methods using a paste of a metal material.

[0254] In addition, various methods, whether dry or wet, can be used to form the organic compound layer 103. For example, vacuum deposition, gravure printing, offset printing, screen printing, inkjet printing, spin coating, or the like may be used.

[0255] Furthermore, the above-mentioned electrodes or layers may be formed using different film formation methods.

[0256] Next, an embodiment of a light-emitting device having a configuration in which multiple light-emitting units are stacked (also referred to as a stacked element or a tandem element) will be described with reference to FIG. 9C . This organic EL element has multiple light-emitting units between an anode and a cathode. One light-emitting unit has a configuration substantially similar to that of the organic compound layer 103 shown in FIG. 9A . In other words, the organic EL element shown in FIG. 9C is an organic EL element having multiple light-emitting units, and the organic EL element shown in FIG. 9A or 9B can be said to be an organic EL element having one light-emitting unit.

[0257] 9C , a first light-emitting unit 511 and a second light-emitting unit 512 are stacked between a first electrode 501 and a second electrode 502, and a charge generation layer 513 is provided between the first light-emitting unit 511 and the second light-emitting unit 512. The first electrode 501 and the second electrode 502 correspond to the first electrode 101 and the second electrode 102 in FIG. 9A , respectively, and the same configurations as those described in the description of FIG. 9A can be applied to them. The first light-emitting unit 511 and the second light-emitting unit 512 may have the same configuration or different configurations.

[0258] The charge generation layer 513 has a function of injecting electrons into one light-emitting unit and injecting holes into the other light-emitting unit when a voltage is applied between the first electrode 501 and the second electrode 502. That is, in Figure 9C, when a voltage is applied so that the potential of the anode is higher than the potential of the cathode, the charge generation layer 513 only needs to inject electrons into the first light-emitting unit 511 and inject holes into the second light-emitting unit 512.

[0259] The charge generation layer 513 is preferably formed to have the same structure as the charge generation layer 116 described in FIG. 9B. A composite material of an organic compound and a metal oxide has excellent carrier injection and carrier transport properties, and therefore can achieve low-voltage driving and low-current driving. Note that when the anode side surface of the light-emitting unit is in contact with the charge generation layer 513, the charge generation layer 513 can also serve as a hole injection layer for the light-emitting unit, and therefore the light-emitting unit does not need to be provided with a hole injection layer.

[0260] Furthermore, when the electron injection buffer layer 119 is provided in the charge generation layer 513, the electron injection buffer layer 119 plays the role of an electron injection layer in the light-emitting unit on the anode side, and therefore, it is not necessarily necessary to form an electron injection layer in the light-emitting unit on the anode side.

[0261] 9C illustrates an organic EL element having two light-emitting units, but the present invention can be applied to an organic EL element having three or more stacked light-emitting units. By arranging a plurality of light-emitting units between a pair of electrodes and separating them with a charge generating layer 513, as in the organic EL element according to this embodiment, it is possible to realize an element that can emit light with high brightness while maintaining a low current density and that has a long life. Furthermore, it is possible to realize a light-emitting device that can be driven at a low voltage and consumes low power.

[0262] Furthermore, by making the emission colors of the respective light-emitting units different, it is possible to obtain light emission of a desired color from the organic EL element as a whole. For example, in an organic EL element having two light-emitting units, it is possible to obtain an organic EL element that emits white light from the entire organic EL element by obtaining red and green emission colors from the first light-emitting unit and blue emission color from the second light-emitting unit.

[0263] Furthermore, each layer and electrode such as the organic compound layer 103, the first light-emitting unit 511, the second light-emitting unit 512, and the charge generation layer can be formed by, for example, a vapor deposition method (including a vacuum vapor deposition method), a droplet discharge method (also called an ink-jet method), a coating method, a gravure printing method, etc. Furthermore, they may contain a low-molecular-weight material, a medium-molecular-weight material (including an oligomer and a dendrimer), or a polymer material.

[0264] 10 shows two adjacent light-emitting devices (light-emitting device 130a and light-emitting device 130b) in a light-emitting device group including a plurality of light-emitting devices 130 included in a display device of one embodiment of the present invention. Note that the display device includes a first electrode group including a plurality of first electrodes 101 formed over an insulating layer 175, a second electrode 102, and a first layer group including a plurality of first EL layers (135a and 135b), and the light-emitting device includes at least the first electrode 101, the EL layer 104, and the second electrode 102 overlapping with each other.

[0265] The light-emitting device 130a has an organic compound layer 103a between a first electrode 101a on an insulating layer 175 and an opposing second electrode 102. The organic compound layer 103a is shown as having a hole injection layer 111a, a hole transport layer 112a, a light-emitting layer 113a, an electron transport layer 114a, and an electron injection layer 115, but may have a different stacked structure. The organic compound layer 103a may have an independent EL layer 104a for each light-emitting device and may further have a common layer (EL layer 105) shared by multiple light-emitting devices. In FIG. 10 , the hole injection layer 111a, the hole transport layer 112a, the light-emitting layer 113a, and the electron transport layer 114a correspond to the EL layer 104, and the electron injection layer 115 corresponds to the common layer (EL layer 105). It is also possible to provide an independent electron injection layer 115 for each light-emitting device, and to use the entire organic compound layer 103a as the EL layer 104a, without providing the EL layer 105.

[0266] The light-emitting device 130b has an organic compound layer 103b between a first electrode 101b on an insulating layer 175 and an opposing second electrode 102. The organic compound layer 103b has a hole injection layer 111b, a hole transport layer 112b, a light-emitting layer 113b, an electron transport layer 114b, and an electron injection layer 115, but may have a different stacked structure. In FIG. 10 , the hole injection layer 111b, the hole transport layer 112b, the light-emitting layer 113b, and the electron transport layer 114b correspond to the EL layer 104b, and the electron injection layer 115 corresponds to a common layer (EL layer 105). It is also possible to have an independent electron injection layer 115 for each light-emitting device, and to use the entire organic compound layer 103b as the EL layer 104b, without providing the EL layer 105.

[0267] The second electrode 102 is preferably a continuous layer (common layer) shared by the light-emitting devices 130a and 130b. The organic compound layers 103a and 103b other than the electron injection layer 115, i.e., the first layer, are processed by photolithography after the electron transport layers 114a and 114b are formed, respectively, and are therefore independent of each other. The edges (outlines) of the organic compound layers 103a other than the EL layer 105 are processed by photolithography, so they are generally aligned in the vertical direction relative to the substrate. The edges (outlines) of the organic compound layers 103b other than the EL layer 105 are processed by photolithography, so they are generally aligned in the vertical direction relative to the substrate.

[0268] Furthermore, since the organic compound layer is processed by photolithography, the distance d between the first electrode 101a and the first electrode 101b can be made smaller than that when mask deposition is performed, and can be set to 50 nm or more and 5 μm or less.

[0269] Note that the structure of this embodiment mode can be used in appropriate combination with structures of other embodiments.

[0270] Embodiment 3 In this embodiment, a structure of a film formation system that can be used to manufacture a functional panel of one embodiment of the present invention will be described with reference to FIGS.

[0271] 20A and 20B are diagrams illustrating the configuration of a film formation system that can be used to manufacture a functional panel according to one embodiment of the present invention. Fig. 20 is a schematic diagram of a cluster-type film formation system 1000A according to one embodiment of the present invention, and Fig. 21 is a schematic diagram of an in-line-type film formation system 1000B according to one embodiment of the present invention.

[0272] 22A and 22B are cross-sectional views illustrating a state in which a film is formed on a first base material 1310 using a film formation apparatus 1100 and a mask frame 1170 that can be used in the film formation system of one embodiment of the present invention, and a state in which a film is formed on the first base material 1310 using an atomic layer deposition (ALD) apparatus.

[0273] <Configuration Example 1 of Film Forming System> The film forming system 1000A includes a loading device LD, a transfer chamber DC connected to the loading device LD, an unloading device ULD connected to the transfer chamber DC, a film forming apparatus 1100 connected to the transfer chamber DC, a processing chamber 1101 connected to the transfer chamber DC, at least one atomic layer deposition apparatus ALD, and a sealing chamber SU (see FIG. 20 ).

[0274] The first substrate 1310 is loaded into the film forming system 1000A by the loading device LD. The loaded first substrate 1310 is transported to each device via the transport chamber DC. The first substrate 1310 is then unloaded from the film forming system 1000A by the unloading device ULD.

[0275] In the film forming apparatus 1100 , a film is formed from a film forming material on the transported first substrate 1310 .

[0276] Furthermore, processes such as patterning processing may be performed as necessary in the processing chamber 1101. For example, processes such as resist coating, exposure, and processing may be performed.

[0277] In addition, in the atomic layer deposition apparatus ALD, a film formation material is formed on the transported first substrate 1310. Note that by moving back and forth between the atomic layer deposition apparatus ALD and the transport chamber DC, a layered structure can be formed using films formed using the ALD method. The layered structure may be a layered structure of different film types by appropriately selecting film formation materials such as precursors.

[0278] The sealing chamber SU seals the transported first base material 1310 with a sealant. For example, a bonding layer may be formed on the first base material 1310, and the first base material 1310 and a second base material 1370 that has been transported in advance may be bonded together using the bonding layer to form a sealant. Note that the sealing chamber SU may be provided as needed, but is not necessarily required.

[0279] The film formation system 1000A may include a plurality of loading devices LD, transfer chambers DC, unloading devices ULD, film formation apparatuses 1100, processing chambers 1101, and atomic layer deposition apparatuses ALD. When a plurality of film formation apparatuses 1100, processing chambers 1101, and atomic layer deposition apparatuses ALD are provided, each of the film formation apparatuses and atomic layer deposition apparatuses ALD may be connected to the transfer chamber DC.

[0280] <Configuration Example 2 of Film Forming System> The film forming system 1000B includes a film forming line 1110 (film forming line 1110a, film forming line 1110b), a film forming line 1111, and a film forming line 1112 (see FIG. 21).

[0281] The film formation line 1110 includes a loading device LD, a film formation apparatus 1100A connected to the loading device LD, a film formation apparatus 1100B connected to the film formation apparatus 1100A, a film formation apparatus 1100C connected to the film formation apparatus 1100B, an atomic layer deposition apparatus ALD connected to the film formation apparatus 1100C, a film formation apparatus 1100D connected to the atomic layer deposition apparatus ALD, an unloading device ULD connected to the atomic layer deposition apparatus ALD, and a processing chamber 1101A.

[0282] 21 shows an example of a film formation system 1000B having two film formation lines 1110a and 1110b to improve throughput when fabricating stacked structures with different configurations. For example, if there are three types of stacked structures with different configurations, a configuration having three film formation lines may be used, or one film formation line may be used multiple times to form stacked structures with different configurations. Therefore, the configuration is not limited to that shown in FIG. 21 . It is sufficient to have at least one film formation line 1110a or 1110b, and multiple film formation lines may be provided as needed.

[0283] The film formation line 1111 includes a loading device LD, an atomic layer deposition apparatus ALD connected to the loading device LD, an unloading device ULD connected to the atomic layer deposition apparatus ALD, and a processing chamber 1101B.

[0284] The film formation line 1112 includes a loading device LD, a film formation apparatus 1100E connected to the loading device LD, an atomic layer deposition apparatus ALD connected to the film formation apparatus 1100E, a sealing chamber SU connected to the atomic layer deposition apparatus ALD, and an unloading device ULD connected to the sealing chamber SU.

[0285] In the film formation lines 1110, 1111, and 1112, the first substrate 1310 is carried into each film formation line by each carry-in device LD. The first substrate 1310 is carried out from each film formation line by each carry-out device ULD.

[0286] In the film formation line 1110, the film formation apparatuses 1100A to 1100D form a film of a film formation material on the transported first base material 1310.

[0287] In addition, in the atomic layer deposition apparatus ALD, a film is formed from a film-forming material on the transported first substrate 1310 .

[0288] Furthermore, in the processing chamber 1101A, processes such as patterning processing can be performed as needed, for example, resist coating, exposure, and processing.

[0289] In the film formation line 1111 , the atomic layer deposition (ALD) equipment forms a film of a film formation material on the transported first substrate 1310 .

[0290] Furthermore, in the processing chamber 1101B, processes such as patterning processing can be performed as needed, for example, resist coating, exposure, and processing.

[0291] In the film formation line 1112, the film formation apparatus 1100E forms a film of a film formation material on the transported first base material 1310. As the material, a metal material or the like can be formed as a film in addition to an organic material.

[0292] In addition, in the atomic layer deposition apparatus ALD, a film is formed from a film-forming material on the transported first substrate 1310 .

[0293] The sealing chamber SU seals the transported first base material 1310 with a sealant. For example, a bonding layer may be formed on the first base material 1310, and the first base material 1310 and a second base material 1370 that has been transported in advance may be bonded together using the bonding layer to form a sealant. Note that the sealing chamber SU may be provided as needed, but is not necessarily required.

[0294] Each of the film formation apparatuses 1100A to 1100E, the sealing chamber SU, and the atomic layer deposition apparatus ALD has a loading entrance and a loading exit.

[0295] In addition, in order to prevent moisture from adhering to the film forming system 1000A or the film forming system 1000B, it is preferable to fill each device with an inert gas (such as nitrogen gas) with a controlled dew point, and it is desirable to maintain a reduced pressure.

[0296] The film formation system 1000A or 1000B described in this embodiment may include a plurality of film formation apparatuses, sealing chambers, atomic layer deposition apparatuses (ALD apparatuses), and processing chambers. For example, by including a plurality of atomic layer deposition apparatuses (ALD apparatuses), a layered structure can be formed using films formed using the ALD method.

[0297] This allows a laminated film in which multiple films are stacked to be formed on the first base material 1310. Furthermore, exposure of the formed film to the atmosphere is minimized, thereby preventing impurities from being mixed in. Furthermore, a manufacturing process with high throughput can be provided.

[0298] In the film formation system 1000B, the film formation lines 1110 to 1112 do not need to be individual lines, but may be connected together to form a series of in-line systems.

[0299] The following describes the individual elements constituting the film forming system 1000A or the film forming system 1000B. Note that these components cannot be clearly separated, and one component may also serve as another component or may include part of another component.

[0300] <<Film formation apparatus 1100>> The film formation apparatus 1100 described in this embodiment includes an evaporation source 1120A having a function of ejecting a film formation material so as to adhere to a first base material 1310, a mask frame 1170 between the first base material 1310 and the evaporation source 1120A, a mask frame support part 1115 having a function of supporting the mask frame 1170, and a film formation chamber 1190 in which the evaporation source 1120A and the mask frame support part 1115 are arranged (see FIG. 22A ).

[0301] The film formation apparatus 1100 may also have a power source 1140. For example, the film formation apparatus 1100 may have a function of moving the first base material 1310 relative to the evaporation source 1120A using the power source 1140. This allows the film formation material ejected from the evaporation source 1120A to be uniformly deposited on the surface of the first base material 1310.

[0302] Furthermore, the film forming apparatus 1100 may use, for example, a power source 1140 to move the mask frame support portion 1115 together with the mask frame 1170 and the first base material 1310 .

[0303] The deposition apparatus 1100 may also have a detector 1198 that detects the position of the mask frame 1170 relative to the first substrate 1310. For example, the first substrate 1310 may be moved and positioned appropriately relative to the mask frame 1170 using the mask frame support 1115.

[0304] The film formation apparatus 1100 may also include an exhaust device 1197 for controlling the pressure in the film formation chamber 1190 and a pipe 1196 for introducing a predetermined gas into the film formation chamber 1190 .

[0305] The film formation apparatus 1100 may also have a door valve 1195 that has a function of allowing the first substrate 1310 to be loaded into and unloaded from the film formation chamber 1190. The door valve 1195 can also be used to load and unload the mask frame 1170.

[0306] The film formation apparatus 1100 may further include an evaporation source 1120B in addition to the evaporation source 1120A. The film formation apparatus 1100 may further include a shielding plate 1121A that blocks the film formation material ejected from the evaporation source 1120A. The film formation apparatus 1100 may further include a detector 1122A that detects the amount of the film formation material ejected from the evaporation source 1120A per unit time.

[0307] The sealing chamber SU has a function of bonding, for example, the first base material 1310 and the second base material 1370 with a bonding layer. In this way, the functional layer and the like formed on the surface of the first base material 1310 are protected by the second base material 1370.

[0308] The atomic layer deposition apparatus ALD has a function of depositing a film of various film-forming materials on the surface of the first substrate 1310 having an intricate structure on the surface thereof. For example, the atomic layer deposition apparatus ALD has a function of forming a film having a thickness of 1 nm or more and 200 nm or less on the first substrate 1310.

[0309] For example, if a small hole called a pinhole is formed on the surface of the first base material 1310, the film-forming material can be deposited inside the pinhole to fill it. Therefore, a film formed by the ALD method can be suitably used as a sealing film when sealing a laminated structure including an organic layer, for example.

[0310] The ALD method includes an ALD method using heat (thermal ALD method) and an ALD method using plasma (plasma ALD method). In the thermal ALD method, a precursor is reacted using thermal energy, while in the plasma ALD method, a reactive gas in a radical state is reacted with the precursor. The atomic layer deposition (ALD) apparatus included in the film formation system 1000 has the function of being able to form films by both the thermal ALD method and the plasma ALD method.

[0311] In a film formation apparatus using the ALD method, source gases for reaction are sequentially introduced into a chamber, and the sequence of gas introduction is repeated to form a film. For example, by switching between the switching valve 1193a connected to the supply source 1181a and the switching valve 1193b connected to the supply source 1181b, multiple source gases can be introduced alternately without mixing. Specifically, the source gas supplied from the supply source 1181a or the supply source 1181b merges with an inert gas (such as argon or nitrogen) at the junction 1182a or the junction 1182b. Therefore, after introducing a first source gas, the switching valve 1193a is closed to introduce only the inert gas, thereby evacuating the first source gas from the chamber. Subsequently, the switching valve 1193b is opened to introduce a second source gas, thereby sequentially supplying two or more source gases to the chamber. Note that the switching valve may also be referred to as a high-speed valve or an ALD valve.

[0312] Alternatively, instead of introducing an inert gas, the first source gas may be discharged by evacuation and then the second source gas may be introduced. The first source gas is adsorbed onto the substrate surface to form a first monoatomic layer, which then reacts with the second source gas introduced later, resulting in the second monoatomic layer being stacked on the first monoatomic layer to form a thin film. By controlling the gas introduction sequence and repeating this process multiple times until the desired thickness is achieved, a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, allowing for precise film thickness adjustment, making this method suitable for fabricating fine structures.

[0313] 22B shows an example of a film formation apparatus (also referred to as an atomic layer deposition apparatus ALD) that uses the ALD method. The atomic layer deposition apparatus ALD has an upper electrode 1188, a shower head 1187, a lower electrode 1186, a heater 1199, and a substrate support 1192 inside a film formation chamber (chamber) 1180. The heater 1199 can be provided inside the lower electrode 1186, and the substrate support 1192 can be formed integrally with the lower electrode 1186. A first substrate 1310 is placed on the substrate support 1192.

[0314] The system also has a supply source 1181a for supplying a precursor and a supply source 1181b for supplying a reactive gas, and the piping connected to these has a switching valve 1193a and a switching valve 1193b, respectively. The switching valve 1193a and the switching valve 1193b have the function of controlling the supply amount of the precursor and reactive gas (hereinafter also referred to as source gas) in pulse time. The piping is also connected to a carrier gas piping, and the source gas and carrier gas are joined at a junction 1182a and a junction 1182b, respectively. The carrier gas may be, for example, argon (Ar), helium (He), or nitrogen (N ２ ) etc. can be used.

[0315] The precursor and reactive gases, together with a carrier gas, are supplied from a raw material inlet 1183a and a raw material inlet 1183b to the film formation chamber 1180. The film formation chamber 1180 is connected to an exhaust device 1185 via a raw material outlet 1184 and a main exhaust valve 1194.

[0316] A power supply 1191 capable of applying high frequency power is connected to the upper electrode 1188 via a capacitor 1189. The upper electrode 1188 and the shower head 1187 may be integrally formed. Source gases introduced from source inlets 1183 a and 1183 b are supplied into the film formation chamber 1180 via the shower head 1187.

[0317] The lower electrode 1186 may be connected to a power source capable of applying a constant potential or high frequency, or may be floating or grounded. Similarly, the substrate support 1192 may be floating or grounded.

[0318] When the thermal ALD method is used, the source gas introduced from the source gas inlet 1183a and the source gas inlet 1183b deposits a precursor adsorbed on the surface of the first substrate 1310 in the film formation chamber 1180 by an adsorption reaction due to heat from a heater, thereby forming a desired film on the surface of the first substrate 1310. When the plasma ALD method is used, the reactive gas is converted into a radical state between the upper electrode 1188 and the lower electrode 1186, and is incident on the surface of the first substrate 1310 due to a potential difference (also referred to as an ion sheath) generated between the upper electrode 1188 and the lower electrode 1186. The radicals then react with the precursor adsorbed on the surface of the first substrate 1310, thereby forming a desired film. In addition to heat, an electric field may be applied to the surface of the first substrate 1310 when the source gas is introduced into the film formation chamber to facilitate precursor adsorption.

[0319] Further, although an example in which two supply sources 1181a and 1181b are provided is shown, there is no particular limitation, and three or more supply sources may be provided.

[0320] The film formation is performed by repeating a cycle of precursor introduction, precursor exhaust, reactant introduction, and reactant exhaust, to form a film having a desired thickness.

[0321] If the device formed on the first substrate 1310 is subject to plasma damage, it is not necessary to use plasma, and it is sufficient to appropriately select the precursor, reaction gas, and temperature to perform the desired film formation.

[0322] In the supply sources 1181a and 1181b, a source gas is formed from a solid source or a liquid source using a vaporizer, a heating means, etc. Alternatively, the supply sources 1181a and 1181b may be configured to supply a gaseous source.

[0323] In the film formation apparatus shown in FIG. 22B , the first substrate 1310 is loaded onto the substrate support part 1192, the film formation chamber 1180 is sealed, and then the first substrate 1310 is heated by the heater 1199 to a desired temperature (for example, 80° C. or higher, 100° C. or higher, or 150° C. or higher; preferably, room temperature (27° C.) or higher and 100° C. or lower), and a thin film is formed on the substrate surface by repeatedly supplying a raw material gas and exhausting the gas by the exhaust device 1185.

[0324] 22B , by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181 a and 1181 b, an insulating layer containing a nitride, nitride oxide, oxynitride, or oxide containing one or more elements selected from silicon, hafnium, aluminum, tantalum, zirconium, etc. can be formed. Specifically, an insulating layer containing silicon nitride, silicon nitride oxide, or silicon oxide, an insulating layer containing hafnium oxide, an insulating layer containing aluminum oxide, an insulating layer containing hafnium silicate, or an insulating layer containing aluminum silicate can be formed. Furthermore, by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181 a and 1181 b, a conductive or semiconductor thin film such as a metal layer such as a tungsten layer or a titanium layer, or a nitride layer such as a titanium nitride layer can also be formed.

[0325] For example, when forming a silicon nitride layer using an atomic layer deposition (ALD) system, a source gas obtained by vaporizing a silicon precursor (organosilane, heterosilane) and a reactive gas such as nitrogen or ammonia are used, and the reactive gas is further used as nitrogen radicals obtained in a plasma atmosphere. In the plasma atmosphere, nitrogen or ammonia gas exists in the form of excited atoms / molecules, radicals, or ions. For example, nitrogen plasma containing nitrogen radicals can be generated by applying high frequency waves such as RF or microwaves to nitrogen gas.

[0326] Specific examples of the organic silane include bis(diethylamino)silane (BDEASi), tris(dimethylamino)silane (TDMAS), bis(tert-butylamino)silane (BTBAS), and di(sec-butylamino)silane (DSBAS). Specific examples of the heterosilane include trisilamine (TSA) and neopentasilane (NPS). Other known materials (organosilanes, heterosilanes) may be appropriately selected depending on the film formation temperature conditions.

[0327] Note that an oxidizing agent (e.g., water, oxygen, or ozone) may be mixed into the reactive gas used to form the silicon nitride layer. This allows a silicon nitride oxide layer and a silicon oxynitride layer to be formed. Alternatively, a silicon oxide layer can be formed by using only an oxidizing agent (e.g., water, oxygen, or ozone) as the reactive gas.

[0328] The silicon nitride layer thus formed contains silicon (Si) and nitrogen (N) as its main components, the silicon nitride oxide layer contains silicon (Si), nitrogen (N) and oxygen (O), the silicon oxynitride layer contains silicon (Si), oxygen (O) and nitrogen (N), and the silicon oxide layer contains silicon (Si) and oxygen (O), but also contains trace amounts of carbon (C) and hydrogen (H). Note that the proportion of the main components refers to 70% or more.

[0329] Furthermore, for example, when a hafnium oxide layer is formed by atomic layer deposition (ALD), a source gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide, hafnium amide such as tetrakisdimethylamidohafnium (TDMAH)), and ozone (O ３ In this case, the first source gas supplied from the supply source 1181a is TDMAH, and the second source gas supplied from the supply source 1181b is ozone. The chemical formula of tetrakisdimethylamidohafnium is Hf[N(CH ３ ) ２ ] ４ Other liquid materials include tetrakis(ethylmethylamido)hafnium.

[0330] Furthermore, for example, when an aluminum oxide layer is formed by atomic layer deposition (ALD), a source gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA)) and H as an oxidizer are used. ２ In this case, the first source gas supplied from the supply source 1181a is TMA, and the second source gas supplied from the supply source 1181b is H. ２ The chemical formula for trimethylaluminum is Al(CH ３ ) ３ Other material liquids include tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0331] Furthermore, for example, when a tungsten layer is formed by atomic layer deposition (ALD), WF ６ Gas and B ２ H ６ The gases are introduced repeatedly to form an initial tungsten layer, and then WF ６ Gas and H ２ The gases are introduced repeatedly in sequence to form a tungsten layer. ２ H ６ Instead of gas, SiH ４Gases may be used, and the device may be configured so that these gases are controlled by a mass flow controller.

[0332] <<First Material 1310>> The first base material 1310 is not particularly limited as long as it has heat resistance sufficient to withstand the manufacturing process and a thickness and size that are applicable to a manufacturing apparatus.

[0333] The first substrate 1310 may also include various functional layers. For example, functional circuits, functional elements, optical elements, functional films, etc., or layers containing a plurality of these may be used. Specifically, pixel circuits, pixel drive circuits, display elements, color filters, moisture-proof films, etc., of known display devices, or layers containing a plurality of these may be used.

[0334] The first base material 1310 can be made of a material including an organic material, an inorganic material, or a composite material of an organic material and an inorganic material.

[0335] For example, inorganic materials such as glass, silicon, ceramics, or metals can be used for the first substrate 1310 .

[0336] Specifically, alkali-free glass, soda-lime glass, crystal glass, silicon, or the like can be used for the first base material 1310 .

[0337] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, silicon, or the like can be used for the first base material 1310. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon, or the like can be used for the first base material 1310.

[0338] Alternatively, the first base material 1310 can be made of an organic material such as a resin, a resin film, or a plastic.

[0339] Specifically, a resin film or plate made of polyester, polyolefin, polyamide, polyimide, polycarbonate, acrylic resin, or the like can be used for first base material 1310 .

[0340] For example, the first base material 1310 can be a thin glass plate or a composite material in which a film of an inorganic material or the like is attached to a resin film or the like.

[0341] For example, the first base material 1310 can be a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film.

[0342] For example, the first base material 1310 can be a composite material in which fibrous or particulate resin or an organic material is dispersed in an inorganic material.

[0343] Furthermore, a single-layer material or a laminated material in which multiple layers are stacked can be used for the first base material 1310. For example, a laminated material in which an insulating layer or the like that prevents diffusion of materials and impurities contained in the materials is stacked can be used for the first base material 1310.

[0344] Specifically, a laminated material made of glass and one or more films selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevent the diffusion of impurities contained in the glass can be applied to the first substrate 1310.

[0345] <<Mask Frame Supporting Section 1115>> The mask frame supporting section 1115 has a function of supporting the mask frame 1170. The mask frame supporting section 1115 may also have a function of moving the mask frame relatively to the deposition source 1120A.

[0346] For example, a structure for gripping or supporting the vicinity of the end of the mask frame 1170 can be used for the mask frame support portion 1115. Specifically, a member with a clamping mechanism or an L-shaped or other supporting member can be used. Furthermore, a plurality of structures for gripping or supporting the mask frame 1170 may be provided. Specifically, when the mask frame 1170 has a rectangular shape, the vicinity of the four corners of the mask frame 1170 may be supported.

[0347] When the mask frame support 1115 is moved relative to the evaporation source 1120A, for example, a power source 1140 can be used. Specifically, a servo motor, a stepping motor, or an air cylinder can be used to move the mask frame support 1115. Specifically, the mask frame support 1115 can be rotated above the evaporation source 1120A or passed across above the evaporation source 1120A.

[0348] <<Mask Frame 1170>> The mask frame 1170 has a shielding region that has the function of blocking the film forming material, and an opening region that is surrounded by the shielding region.

[0349] The deposition apparatus 1100 includes one or more deposition sources, such as a deposition source 1120A and a deposition source 1120B.

[0350] The same material may be ejected from the evaporation source 1120 A and the evaporation source 1120 B. This allows the thickness of the film material deposited on the surface of the first base material 1310 per unit time to be increased.

[0351] Different materials may be ejected from the evaporation source 1120A and the evaporation source 1120B. This allows a film containing a mixture of different materials to be formed on the surface of the first base material 1310. In other words, co-evaporation can be performed.

[0352] The evaporation source 1120A has a function of ejecting a film formation material. For example, it is preferable that the evaporation source 1120A has directivity in the ejection direction of the film formation material. This can improve the use efficiency of the film formation material.

[0353] Specifically, a point-source evaporation source or a linear-source evaporation source can be used as the evaporation source 1120A. Alternatively, an evaporation source in which point sources are arranged in a line or a matrix, or an evaporation source in which vaporized film formation material is ejected from a slit can be used.

[0354] The film formation apparatus 1100 may also have a function of moving the evaporation source 1120A relatively to the substrate support unit 1192. For example, a film may be formed while the evaporation source 1120A is scanned over the first substrate 1310 using a power source.

[0355] <<Film Forming Chamber 1190>> The film forming chamber 1190 can reduce the internal pressure to below atmospheric pressure. −３ Pa or less.

[0356] The exhaust device 1197 can reduce the pressure inside the film formation chamber 1190. For example, a mechanical pump, a turbo pump, a cryopump, or the like can be used as the exhaust device 1197.

[0357] The film formation chamber 1190 can be filled with gas, and a pipe 1196 can supply, for example, nitrogen gas to the film formation chamber.

[0358] The film formation chamber 1190 may be provided with a function for heating the inner wall, thereby enabling molecules adsorbed on the inner wall to be efficiently desorbed. For example, a heater or a pipe for supplying a heat medium may be provided on the wall.

[0359] Note that this embodiment mode can be appropriately combined with other embodiment modes described in this specification.

[0360] Embodiment 4 In this embodiment, a display device according to one embodiment of the present invention will be described.

[0361] The display device of the present embodiment can be a high-definition display device, and can therefore be used, for example, as a display unit for a wristwatch-type or bracelet-type information terminal (wearable device), as well as a display unit for a wearable device that can be worn on the head, such as a head-mounted display (HMD) for VR, or a glasses-type device for AR.

[0362] The display device of the present embodiment can be a high-resolution display device or a large-sized display device. Therefore, the display device of the present embodiment can be used in electronic devices having relatively large screens, such as television devices, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as in the display units of digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0363] 11A shows a perspective view of display module 280. Display module 280 has display device 100A and FPC 290. Note that the display device included in display module 280 is not limited to display device 100A, and may be either display device 100B or display device 100E, which will be described later.

[0364] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0365] 11B is a perspective view schematically showing the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0366] The pixel portion 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 11B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 11B shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 1.

[0367] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0368] One pixel circuit 283a is a circuit that controls the driving of a plurality of elements included in one pixel 284a.

[0369] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0370] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0371] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby making it possible to extremely increase the aperture ratio (effective display area ratio) of the display unit 281.

[0372] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so that even if the display unit is enlarged with the lens, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices having relatively small display units.

[0373] Display Device 100A The display device 100A shown in FIG. 12A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0374] The substrate 301 corresponds to the substrate 291 in FIGS. 11A and 11B . The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0375] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0376] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0377] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0378] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0379] An insulating layer 255 is provided to cover the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B are provided on the insulating layer 175. An insulator is provided in the region between adjacent light-emitting devices.

[0380] An insulating layer 156R is provided to have a region overlapping with a side surface of the conductive layer 151R, an insulating layer 156G is provided to have a region overlapping with a side surface of the conductive layer 151G, and an insulating layer 156B is provided to have a region overlapping with a side surface of the conductive layer 151B. Furthermore, a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R, a conductive layer 152G is provided to cover the conductive layer 151G and the insulating layer 156G, and a conductive layer 152B is provided to cover the conductive layer 151B and the insulating layer 156B. A protective layer 158R is located on the organic compound layer 103R, a protective layer 158G is located on the organic compound layer 103G, and a protective layer 158B is located on the organic compound layer 103B.

[0381] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and the drain of the transistor 310 by an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. Various conductive materials can be used for the plugs.

[0382] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 with a resin layer 122. For details of the components from the light-emitting device 130 to the substrate 120, refer to embodiment 3. The substrate 120 corresponds to the substrate 292 in FIG. 11A .

[0383] Fig. 12B is a modified example of the display device 100A shown in Fig. 12A. The display device shown in Fig. 12B has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B. In the display device shown in Fig. 12B, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0384] [Display Device 100B] FIG. 13 shows a perspective view of the display device 100B, and FIG. 14 shows a cross-sectional view of the display device 100B.

[0385] The display device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 13, the substrate 352 is indicated by a dashed line.

[0386] The display device 100B includes a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like. Fig. 13 shows an example in which an IC 354 and an FPC 353 are mounted on the display device 100B. Therefore, the configuration shown in Fig. 13 can also be called a display module including the display device 100B, an IC (integrated circuit), and an FPC. Here, a display device in which a connector such as an FPC is attached to a substrate or a display device in which an IC is mounted on the substrate is called a display module.

[0387] The connection portion 140 is provided outside the pixel portion 177. There may be one or more connection portions 140. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0388] The circuit 356 can be, for example, a scanning line driver circuit.

[0389] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0390] 13 shows an example in which an IC 354 is provided on a substrate 351 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. Note that the display device 100B and the display module may not include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0391] Figure 14 shows an example of a cross section of the display device 100B, where a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut.

[0392] [Display device 100C] The display device 100C shown in Figure 14 has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B, etc.

[0393] For details of the light emitting device 130R, the light emitting device 130G, and the light emitting device 130B, refer to the first to third embodiments.

[0394] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B.

[0395] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0396] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted. Conductive layer 224G, conductive layer 151G, conductive layer 152G, insulating layer 156G, conductive layer 152G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, insulating layer 156B, conductive layer 152B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, insulating layer 156R, conductive layer 152R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0397] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0398] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, which are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, are provided on the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0399] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the organic insulating material that can be used for the first insulating layer 127 described above can be used for the layer 128.

[0400] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 14 , the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (nitrogen, argon, etc.), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0401] 14 shows an example in which the connection portion 140 has a conductive layer 224C obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive layer 151C obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive layer 152C obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. Also, FIG. 14 shows an example in which an insulating layer 156C is provided so as to have a region overlapping with a side surface of the conductive layer 151C.

[0402] The display device 100B is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. When the light-emitting element emits infrared or near-infrared light, it is preferably made of a material that is highly transparent to such light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0403] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0404] The insulating layers 211, 213, and 215 are each preferably formed using an inorganic insulating film.

[0405] The insulating layer 214 that functions as a planarizing layer is preferably an organic insulating layer.

[0406] The transistor 201 and the transistor 205 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a conductive layer 222a and a conductive layer 222b functioning as a source and a drain, a semiconductor layer 231, an insulating layer 213 functioning as a gate insulating layer, and a conductive layer 223 functioning as a gate.

[0407] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a source electrode or a drain electrode of the transistor 201 is electrically connected to the FPC 353 through a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0408] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. In addition, various optical members can be arranged on the outside of the substrate 352.

[0409] The materials that can be used for the substrate 120 can be used for the substrate 351 and the substrate 352 .

[0410] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0411] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0412] [Display Device 100D] The display device 100D shown in FIG. 15 differs from the display device 100C shown in FIG. 14 mainly in that it is a bottom-emission display device.

[0413] Light emitted from the light-emitting device is emitted toward the substrate 351. A material that is highly transparent to visible light is preferably used for the substrate 351. On the other hand, the light-transmitting property of the material used for the substrate 352 does not matter.

[0414] It is preferable to form a light-shielding layer between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. In FIG. 15 , an example is shown in which a light-shielding layer 157 is provided over the substrate 351, an insulating layer 153 is provided over the light-shielding layer, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0415] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0416] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0417] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are made of a material that is highly transparent to visible light. The common electrode 155 is preferably made of a material that reflects visible light.

[0418] Although the light emitting device 130G is not shown in FIG. 15, the light emitting device 130G is also provided.

[0419] Although FIG. 15 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0420] [Display Device 100E] The display device 100E shown in FIG. 16 is a modified example of the display device 100C shown in FIG. 14, and differs from the display device 100C mainly in that it has colored layers 132R, 132G, and 132B.

[0421] In the display device 100E, the light-emitting device 130 has an area that overlaps one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0422] In the display device 100E, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The display device 100E may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0423] Although FIGS. 14 and 16 show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0424] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0425] Embodiment 5 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0426] The electronic devices of this embodiment include the display device of one embodiment of the present invention in their display portions. The display device of one embodiment of the present invention has high display performance and can easily achieve high definition and high resolution. Therefore, the display device of one embodiment of the present invention can be used in the display portions of various electronic devices.

[0427] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0428] In particular, the display device of one embodiment of the present invention can have high resolution and can therefore be suitably used in electronic devices having a relatively small display area. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices (e.g., head-mounted displays), AR glasses-type devices, and MR devices.

[0429] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0430] An example of a wearable device that can be worn on the head will be described with reference to FIGS. 17A to 17D.

[0431] The electronic device 700A shown in FIG. 17A and the electronic device 700B shown in FIG. 17B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0432] The display device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0433] Each of the electronic device 700A and the electronic device 700B can project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visible through the optical member 753.

[0434] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0435] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0436] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or wired.

[0437] The housing 721 may be provided with a touch sensor module.

[0438] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0439] The electronic device 800A shown in Figure 17C and the electronic device 800B shown in Figure 17D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0440] The display device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can have high reliability.

[0441] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0442] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that allows the left and right positions of lens 832 and display unit 820 to be adjusted so that they are optimally positioned according to the position of the user's eyes.

[0443] The mounting portion 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head.

[0444] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0445] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone.

[0446] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0447] The electronic device of one embodiment of the present invention may have a function of wirelessly communicating with the earphone 750 .

[0448] 17B includes an earphone unit 727. A portion of the wiring connecting the earphone unit 727 and the control unit may be disposed inside the housing 721 or the attachment unit 723.

[0449] 17D includes an earphone unit 827. For example, the earphone unit 827 and the control unit 824 may be configured to be connected to each other by wire.

[0450] As described above, as electronic devices according to one embodiment of the present invention, both glasses-type devices (such as the electronic devices 700A and 700B) and goggle-type devices (such as the electronic devices 800A and 800B) are suitable.

[0451] The electronic device 6500 shown in FIG. 18A is a portable information terminal that can be used as a smartphone.

[0452] The electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like. The display portion 6502 has a touch panel function.

[0453] The display device of one embodiment of the present invention can be applied to the display portion 6502. Therefore, the electronic device can have high reliability.

[0454] FIG. 18B is a schematic cross-sectional view including the end of the housing 6501 on the microphone 6506 side.

[0455] A light-transmitting protective member 6510 is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a printed circuit board 6517, a battery 6518, etc. are arranged in the space surrounded by the housing 6501 and the protective member 6510.

[0456] A display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 by adhesive layers (not shown).

[0457] In a region outside the display portion 6502, a part of the display panel 6511 is folded back, and an FPC 6515 is connected to the folded back part. An IC 6516 is mounted on the FPC 6515. The FPC 6515 is connected to a terminal provided on a printed circuit board 6517.

[0458] The display device of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Furthermore, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted thereon while keeping the thickness of the electronic device small. Furthermore, by folding back a part of the display panel 6511 and arranging a connection portion with the FPC 6515 on the back side of the pixel portion, an electronic device with a narrow frame can be realized.

[0459] 18C shows an example of a television set. A television set 7100 has a display portion 7000 built into a housing 7171. Here, the housing 7171 is supported by a stand 7173.

[0460] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0461] The television set 7100 shown in FIG. 18C can be operated using operation switches provided on the housing 7171 and a separate remote control 7151 .

[0462] 18D shows an example of a laptop personal computer 7200. The laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, and an external connection port 7214. The housing 7211 includes a display portion 7000.

[0463] The display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0464] 18E and 18F show an example of digital signage.

[0465] 18E includes a housing 7301, a display portion 7000, and a speaker 7303. The digital signage 7300 may further include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like.

[0466] 18F shows a digital signage 7400 attached to a cylindrical pillar 7401. The digital signage 7400 has a display unit 7000 provided along the curved surface of the pillar 7401.

[0467] 18E and 18F, the display device of one embodiment of the present invention can be applied to the display portion 7000. Therefore, the electronic device can have high reliability.

[0468] The larger the display unit 7000, the more information can be provided at one time. Also, the larger the display unit 7000, the more easily it will attract people's attention, which can increase the advertising effectiveness of, for example, advertisements.

[0469] Furthermore, as shown in Figures 18E and 18F, it is preferable that the digital signage 7300 or the digital signage 7400 be able to wirelessly link with an information terminal 7311 or an information terminal 7411 such as a smartphone carried by a user.

[0470] The electronic device shown in Figures 19A to 19G has a housing 9000, a display unit 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (including a function to measure force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared rays), a microphone 9008, etc.

[0471] 19A to 19G have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to control processing using various software (programs), a wireless communication function, a function to read and process programs or data recorded on a recording medium, etc.

[0472] The electronic device shown in FIGS. 19A to 19G will be described in detail below.

[0473] FIG. 19A is a perspective view showing a mobile information terminal 9171. The mobile information terminal 9171 can be used as, for example, a smartphone. Note that the mobile information terminal 9171 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, or the like. The mobile information terminal 9171 can display text and image information on multiple surfaces. FIG. 19A shows an example in which three icons 9050 are displayed. Information 9051, indicated by a dashed rectangle, can also be displayed on another surface of the display unit 9001. Examples of the information 9051 include notifications of incoming emails, SNS messages, phone calls, etc., the title of the email or SNS message, the sender's name, the date and time, the remaining battery level, and radio wave intensity. Alternatively, the icon 9050 or the like may be displayed in the position where the information 9051 is displayed.

[0474] 19B is a perspective view showing a mobile information terminal 9172. The mobile information terminal 9172 has a function of displaying information on three or more surfaces of the display portion 9001. Here, an example is shown in which information 9052, information 9053, and information 9054 are displayed on different surfaces. For example, a user can check information 9053 displayed in a position that can be observed from above the mobile information terminal 9172 while the mobile information terminal 9172 is stored in a breast pocket of clothes.

[0475] 19C is a perspective view showing a tablet terminal 9173. The tablet terminal 9173 is capable of executing various applications such as mobile phone calls, e-mail, text browsing and creation, music playback, internet communication, and computer games, for example. The tablet terminal 9173 has a display unit 9001, a camera 9002, a microphone 9008, and a speaker 9003 on the front side of a housing 9000, operation keys 9005 as operation buttons on the left side of the housing 9000, and a connection terminal 9006 on the bottom.

[0476] FIG. 19D is a perspective view showing a wristwatch-type mobile information terminal 9200. The mobile information terminal 9200 can be used as, for example, a smart watch (registered trademark). The display surface of the display unit 9001 is curved, and display can be performed along the curved display surface. The mobile information terminal 9200 can also perform hands-free calling by communicating with, for example, a headset capable of wireless communication. The mobile information terminal 9200 can also perform data transmission and charging with another information terminal through a connection terminal 9006. Note that charging may be performed by wireless power supply.

[0477] 19E to 19G are perspective views showing a foldable mobile information terminal 9201. Also, FIG. 19E is a perspective view of the mobile information terminal 9201 in an unfolded state, FIG. 19G is a perspective view of the mobile information terminal 9201 in a folded state, and FIG. 19F is a perspective view of a state in the process of changing from one of FIGS. 19E and 19G to the other. The mobile information terminal 9201 is highly portable when folded, and has a seamless, wide display area when unfolded, providing excellent visibility of the display. The display portion 9001 of the mobile information terminal 9201 is supported by three housings 9000 connected by hinges 9055. For example, the display portion 9001 can be bent with a curvature radius of 0.1 mm or more and 150 mm or less.

[0478] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0479] At least a part of the configuration examples exemplified in this embodiment and the corresponding drawings can be combined as appropriate with other configuration examples or drawings.

[0480] This embodiment mode can be implemented by appropriately combining at least a part thereof with other embodiment modes described in this specification.

[0481] 100A: display device, 100B: display device, 100C: display device, 100D: display device, 100E: display device, 100: display device, 101a: first electrode, 101B: first electrode, 101b: first electrode, 101G: first electrode, 101R: first electrode, 101: first electrode, 102: second electrode, 103a: organic compound layer, 103B: organic compound layer, 103b: organic compound layer, 103Bf: organic compound film, 103G: organic compound layer, 103Gf: organic compound film, 103R: organic compound layer, 103Rf: organic compound film, 103: organic compound layer, 104a: EL layer , 104B: EL layer, 104b: EL layer, 104G: EL layer, 104R: EL layer, 104: EL layer, 105: EL layer, 110B: sub-pixel, 110G: sub-pixel, 110R: sub-pixel, 110: sub-pixel, 111a: hole injection layer, 111b: hole injection layer, 111C: conductive layer, 111: hole injection layer, 112a: hole transport layer, 112B: conductive layer, 112b: hole transport layer, 112R: conductive layer, 112: hole transport layer, 113a: light emitting layer, 113b: light emitting layer, 113: light emitting layer, 114a: electron transport layer, 114b: electron transport layer, 114: electron transport layer, 115: electron injection layer, 116: charge generation layer, 117: P-type layer, 118: electron relay layer, 119: electron injection buffer layer, 120: substrate, 122: resin layer, 125a: second insulating layer, insulating film, 125af: insulating film, 125b: third insulating layer, 125bf: insulating film, 126B: conductive layer, 126R: conductive layer, 127a: first insulating layer, 127f: insulating film, 127: first insulating layer, 128: layer, 129B: conductive layer, 129R: conductive layer, 130a: light-emitting device, 130B: light-emitting device, 130b: light-emitting device, 130G: light-emitting device, 130R: light-emitting device, 130: light-emitting device, 131a: protective layer, 131b: protective layer, 131: protective layer, 132B: Colored layer, 132G: colored layer, 132R: colored layer, 140: connecting portion, 141: region, 142: adhesive layer, 151B: conductive layer, 151C: conductive layer, 151f: conductive film, 151G: conductive layer, 151R: conductive layer, 151: conductive layer, 152B: conductive layer, 152C: conductive layer, 152f: conductive film, 152G: conductive layer, 152R: conductive layer, 152: conductive layer, 153: insulating layer, 155: common electrode, 156B: insulating layer, 156C: insulating layer, 156f: insulating film, 156G: insulating layer, 156R: insulating layer,157: light-shielding layer, 158B: protective layer, 158Bf: protective film, 158G: protective layer, 158Gf: protective film, 158R: protective layer, 158Rf: protective film, 159B: mask layer, 159Bf: mask film, 159G: mask layer, 159Gf: mask film, 159R: mask layer, 159Rf: mask film, 166: conductive layer, 171: insulating layer, 172: conductive layer, 173: insulating layer, 174: insulating layer, 175: insulating layer, 176: plug, 177: pixel portion, 178: pixel, 179: conductive layer, 190B: resist mask, 190G: resist mask, 190R: resist mask, 191: Resist mask, 201: transistor, 204: connection portion, 205: transistor, 211: insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 224B: conductive layer, 224C: conductive layer, 224G: conductive layer, 224R: conductive layer, 231: semiconductor layer, 240: capacitor, 241: conductive layer, 242: connection layer, 243: insulating layer, 245: conductive layer, 254: insulating layer, 255: insulating layer, 256: plug, 261: insulating layer, 271: plug, 280: display module, 281: display portion, 28 2: circuit section, 283a: pixel circuit, 283: pixel circuit section, 284a: pixel, 284: pixel section, 285: terminal section, 286: wiring section, 290: FPC, 291: substrate, 292: substrate, 301: substrate, 310: transistor, 311: conductive layer, 312: low resistance region, 313: insulating layer, 314: insulating layer, 315: element isolation layer, 351: substrate, 352: substrate, 353: FPC, 354: IC, 355: wiring, 356: circuit, 501: first electrode, 502: second electrode, 511: first light-emitting unit, 512: second light-emitting unit, 513: charge generation layer, 700A: electron Device, 700B: electronic device, 721: housing, 723: wearing part, 727: earphone part, 750: earphone, 751: display panel, 753: optical member, 756: display area, 757: frame, 758: nose pad, 800A: electronic device, 800B: electronic device, 820: display part, 821: housing, 822: communication part, 823: wearing part, 824: control part, 825: imaging part, 827: earphone part, 832: lens, 1000A: film forming system, 1000B: film forming system, 1100A: film forming apparatus, 1100B: film forming apparatus, 1100C: film forming apparatus, 1100D: film forming apparatus,1100E: film forming apparatus, 1100: film forming apparatus, 1101A: processing chamber, 1101B: processing chamber, 1101: processing chamber, 1110a: film forming line, 1110b: film forming line, 1110: film forming line, 1111: film forming line, 1112: film forming line, 1115: mask frame support, 1120A: evaporation source, 1120B: evaporation source, 1121A: shielding plate, 1122A: detector, 1140: power, 1170: mask frame, 1180: film forming chamber, 1181a: supply source, 1181b: supply source, 1182a: junction, 1182b: junction, 1183a: raw material inlet, 1183b : raw material inlet, 1184: raw material outlet, 1185: exhaust device, 1186: lower electrode, 1187: shower head, 1188: upper electrode, 1189: capacitor, 1190: film formation chamber, 1191: power supply, 1192: substrate support part, 1193a: switching valve, 1193b: switching valve, 1194: main exhaust valve, 1195: door valve, 1196: piping, 1197: exhaust device, 1198: detector, 1199: heater, 1310: first substrate, 1370: second substrate, 6500: electronic device, 6501: housing, 6502: display part, 6503: power button 6504: Button, 6505: Speaker, 6506: Microphone, 6507: Camera, 6508: Light source, 6510: Protective member, 6511: Display panel, 6512: Optical member, 6513: Touch sensor panel, 6515: FPC, 6516: IC, 6517: Printed circuit board, 6518: Battery, 7000: Display unit, 7100: Television device, 7151: Remote control unit, 7171: Housing, 7173: Stand, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: digital signage, 7301: housing, 7303: speaker, 7311: information terminal, 7400: digital signage, 7401: pillar, 7411: information terminal, 9000: housing, 9001: display unit, 9002: camera, 9003: speaker, 9005: operation keys, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050: icon, 9051: information, 9052: information, 9053: information, 9054: information, 9055: hinge, 9171: mobile information terminal, 9172: mobile information terminal, 9173: tablet terminal,9200: portable information terminal, 9201: portable information terminal,

Claims

a first light emitting device; and a second light emitting device disposed adjacent to the first light emitting device; A display device having a base insulating layer, a first insulating layer, a second insulating layer, and a third insulating layer, the first light emitting device has a first electrode provided on the base insulating layer, a first electroluminescent layer on the first electrode, and a second electrode on the first electroluminescent layer; the second light emitting device has a third electrode provided on the base insulating layer, a second EL layer on the third electrode, and a fourth electrode on the second EL layer; the second electrode and the fourth electrode are part of a continuous conductive film shared by the first light emitting device and the second light emitting device; the first insulating layer and the third insulating layer contain an inorganic material; the second insulating layer includes an organic material; the first insulating layer continuously covers an upper surface end and a side surface of the first EL layer, a base insulating layer between the first electrode and the third electrode, and a side surface and an upper surface end of the second EL layer; the second insulating layer is disposed on the first insulating layer, and an end of the second insulating layer is located inside an end of the first insulating layer; the third insulating layer is disposed on the second insulating layer and is in contact with the first insulating layer in a region not overlapping with the first insulating layer; At least a portion of each of the first insulating layer to the third insulating layer overlaps with a portion of a conductive film located between the second electrode and the fourth electrode, The thickness of the first insulating layer and the thickness of the third insulating layer are 5 nm or more and 50 nm or less. Display device. In claim 1, the first light emitting device has a third EL layer between the first EL layer and the second electrode; the second light emitting device has a fourth EL layer between the second EL layer and the fourth electrode; the third EL layer and the fourth EL layer are part of a common contiguous layer shared by the first light emitting device and the second light emitting device; At least a portion of each of the first insulating layer to the third insulating layer overlaps with a portion of a common layer located between the third EL layer and the fourth EL layer, and with a portion of a conductive film located between the second electrode and the fourth electrode. Display device. In claim 1 or 2, A display device, wherein the first insulating layer and the third insulating layer have a thickness of 5 nm or more and 10 nm or less. In claim 1 or 2, The display device, wherein the first insulating layer and the third insulating layer are layers made of a film formed by a PEALD method. In claim 1 or 2, The display device, wherein the first insulating layer and the third insulating layer comprise silicon nitride. In claim 5, The display device, wherein one or both of the first insulating layer and the third insulating layer have a laminated structure including a layer containing silicon nitride and a layer made of another material. In claim 5, The display device, wherein one or both of the first insulating layer and the third insulating layer have a laminated structure of a layer containing silicon nitride and a layer containing silicon oxide. In claim 1 or 2, A protective film is provided on the conductive film, The display device, wherein the protective film is an insulating film formed by a PEALD method.

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