Substrate processing apparatus and substrate processing method

Abstract

This substrate processing apparatus comprises a light source cover 92, an inner nozzle 93, and an exhaust guide 94. The light source cover 92 includes a lower surface 92sL that faces a substrate W, and a central opening 92op that is formed by the inner periphery of the lower surface 92sL. The inner nozzle 93 forms a flow of an oxidizing gas that flows radially from the central opening 92op between the lower surface 92sL and the substrate W. The light source 91 irradiates the substrate W with light through the lower surface 92sL. The exhaust guide 94 includes an endless suction port 95i that surrounds a central axis CL on the outside of the central opening 92op, and sucks gas that flows radially from the central opening 92op along the substrate W from the endless suction port 95i.

Description

Substrate processing apparatus and substrate processing method Related Applications

[0001] This application claims priority based on Japanese Patent Application No. 2023-103715 filed on June 23, 2023, the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to a substrate processing apparatus and a substrate processing method for processing substrates, including, for example, semiconductor wafers, substrates for FPDs (Flat Panel Displays) such as liquid crystal display devices and organic EL (electroluminescence) display devices, substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, substrates for photomasks, ceramic substrates, and substrates for solar cells.

[0003] Patent Document 1 discloses that when the solidified material is sublimated and removed from the pattern-formed surface of the substrate, organic matter precipitated on the solidified material is removed by bringing the solidified material into contact with ozone gas. Paragraph 0149 of Patent Document 1 describes an ozone gas exhaust means, an ozone gas exhaust pump, an exhaust pipe, a valve, a suction nozzle, and the like.

[0004] JP 2018-110199 A

[0005] Although paragraph 0149 of Patent Document 1 describes exhausting the ozone gas supplied to the solidified body, Patent Document 1 does not disclose a specific structure or method for exhausting the ozone gas.

[0006] At least one embodiment of the present invention provides a substrate processing apparatus and a substrate processing method that can narrow the range of diffusion of an oxidizing gas that oxidizes and vaporizes organic matter, and can remove organic matter from a substrate by supplying the oxidizing gas.

[0007] One embodiment of the present invention provides a substrate processing apparatus comprising: a substrate holder that holds a substrate; a light source cover that includes an opposing surface facing the substrate held by the substrate holder and a central opening formed by the inner periphery of the opposing surface surrounding a central axis passing through the center of the substrate; an inner nozzle that discharges an oxidizing gas that oxidizes and vaporizes organic matter toward the substrate held by the substrate holder, thereby forming a flow of the oxidizing gas flowing radially from the central opening between the opposing surface and the substrate; a light source that heats the substrate and the oxidizing gas by irradiating the substrate held by the substrate holder with light through the opposing surface; and an exhaust guide that includes an endless suction port that surrounds the central axis outside the central opening or a plurality of divided suction ports that are arranged in a ring shape outside the central opening and surround the central axis, and that sucks gas flowing radially from the central opening along the substrate through the endless suction port or the plurality of divided suction ports.

[0008] In the above embodiment, at least one of the following features may be added to the substrate processing apparatus.

[0009] The light source cover further includes an outer peripheral wall that surrounds the light source, and the exhaust guide surrounds the entire periphery of the outer peripheral wall without contacting the outer peripheral wall.

[0010] The light source cover further includes a top wall protruding inward from the outer peripheral wall, the exhaust guide includes an exhaust ring surrounding the entire outer peripheral wall without contacting the outer peripheral wall, and a flange protruding outward from the exhaust ring, and the substrate processing apparatus further includes a support arm supporting the top wall and flange, and at least a portion of the flange is positioned below the upper end of the top wall and above the lower end of the top wall.

[0011] The exhaust guide further includes an exhaust port that opens on a surface of the exhaust guide, and an internal flow path that guides gas from the endless suction port or the multiple divided suction ports to the exhaust port, and the internal flow path includes a first cylindrical flow path that surrounds the central axis on a cylindrical surface that surrounds the central axis, a second cylindrical flow path that surrounds the central axis on the cylindrical surface, a plurality of first linear flow paths extending from the first cylindrical flow path to the second cylindrical flow path, and a plurality of second linear flow paths that extend from the second cylindrical flow path toward the endless suction port or the multiple divided suction ports on an opposite side to the multiple first linear flow paths, and the multiple first linear flow paths and the multiple second linear flow paths are arranged on the cylindrical surface such that at least one of the multiple first linear flow paths does not overlap any of the multiple second linear flow paths when viewed in a direction parallel to the central axis.

[0012] The substrate processing apparatus further includes a gas heater that heats the oxidizing gas before it is supplied to the inner nozzle.

[0013] The substrate processing apparatus further includes an oxidation gas pipe that guides the oxidation gas to be discharged from the inner nozzle, an inert gas pipe that guides the inert gas to be discharged from the inner nozzle, an oxidation gas valve that switches between an open state that allows the oxidation gas to pass through the oxidation gas pipe toward the inner nozzle and a closed state that stops the oxidizing gas from flowing through the oxidizing gas pipe toward the inner nozzle, and an inert gas valve that switches between an open state that allows the inert gas to pass through the inert gas pipe toward the inner nozzle and a closed state that stops the inert gas from flowing through the inert gas pipe toward the inner nozzle.

[0014] The substrate processing apparatus further includes a control device that switches the oxidizing gas valve from the open state to the closed state while causing the exhaust guide to suck in gas, and then switches the inert gas valve from the closed state to the open state while causing the exhaust guide to suck in gas.

[0015] The substrate processing apparatus further includes a sublimable substance-containing liquid nozzle that ejects a sublimable substance-containing liquid containing a sublimable substance toward the substrate held by the substrate holder, a gas nozzle that ejects gas toward the substrate held by the substrate holder, and a spin motor that rotates the substrate held by the substrate holder by rotating the substrate holder around a rotation axis that passes through the center of the substrate held by the substrate holder.

[0016] The substrate processing apparatus further includes a control device that causes the inner nozzle to start discharging the oxidizing gas after a solidified film containing the sublimable substance contained in the sublimable substance-containing liquid is removed from the substrate.

[0017] Another embodiment of the present invention provides a substrate processing method including: an oxidizing gas supply step of discharging an oxidizing gas, which oxidizes and vaporizes organic matter, from an inner nozzle toward a substrate held by a substrate holder, thereby forming a flow of the oxidizing gas flowing radially from a central opening formed by the inner periphery of an opposing surface surrounding a central axis passing through the center of the substrate, between the opposing surface and the substrate; a light emission step of irradiating the substrate held by the substrate holder with light from a light source via the opposing surface while discharging the oxidizing gas from the inner nozzle, thereby heating the substrate and the oxidizing gas; and an exhaust step of discharging the oxidizing gas from the inner nozzle, while sucking the oxidizing gas flowing radially from the central opening along the substrate into an endless suction port surrounding the central axis outside the central opening or into a plurality of divided suction ports arranged in a ring shape outside the central opening and surrounding the central axis, thereby guiding the oxidizing gas into an exhaust guide provided with the endless suction port or a plurality of divided suction ports.

[0018] The above and other objects, features and advantages of the present invention will become apparent from the following description of the embodiments with reference to the accompanying drawings.

[0019] 4 is a schematic plan view showing the layout of a substrate processing apparatus according to an embodiment of the present invention; FIG. 5 is a schematic side view of the substrate processing apparatus; FIG. 6 is a schematic horizontal view of the interior of a processing unit provided in the substrate processing apparatus; FIG. 7 is a schematic view of the interior of the processing unit as viewed from above; FIG. 8 is a cross-sectional view of a heater, an inner nozzle, and an exhaust guide taken along a plane including the central axis of a light source cover; FIG. 9 is a schematic view of the heater, the inner nozzle, and the exhaust guide as viewed from below; FIG. 10 is an enlarged view of a portion of FIG. 1; FIG. 11 is a cross-sectional view of an exhaust guide; FIG. 12 is a block diagram showing the electrical configuration of the substrate processing apparatus; FIG. 13 is a process diagram for explaining an example of substrate processing performed by the substrate processing apparatus; FIG. 14 is a schematic cross-sectional view of a substrate; FIG. 15 is a schematic view showing a state in which an oxidizing gas is being discharged from the inner nozzle while the exhaust guide is sucking in the oxidizing gas; and FIG. 16 is a schematic view showing a state in which an inert gas is being discharged from the inner nozzle while the exhaust guide is sucking in the inert gas after the oxidizing gas has been supplied to the substrate.

[0020] In the following description, unless otherwise specified, the air pressure inside the substrate processing apparatus 1 is assumed to be maintained at the air pressure inside the clean room in which the substrate processing apparatus 1 is installed (for example, 1 atmosphere or a value close to that).

[0021] 1A is a schematic plan view showing the layout of a substrate processing apparatus 1 according to an embodiment of the present invention, and FIG.

[0022] The substrate processing apparatus 1 is a single-wafer processing apparatus that processes disk-shaped substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a load port LP that holds carriers CA that accommodate substrates W, a plurality of processing units 2 that process the substrates W transferred from the carriers CA on the load port LP with processing fluids such as processing liquids and processing gases, a transport system TS that transports the substrates W between the carriers CA on the load port LP and the plurality of processing units 2, and a control device 3 that controls the substrate processing apparatus 1.

[0023] The multiple processing units 2 form multiple towers TW. Fig. 1A shows an example in which four towers TW are formed. As shown in Fig. 1B, the multiple processing units 2 included in one tower TW are stacked one above the other. As shown in Fig. 1A, the multiple towers TW form two rows extending in the depth direction of the substrate processing apparatus 1 in a plan view. In a plan view, the two rows face each other across a transport path TP.

[0024] The transport system TS includes an indexer robot IR that transports substrates W between a carrier CA on a load port LP and the plurality of processing units 2, and a center robot CR that transports substrates W between the indexer robot IR and the plurality of processing units 2. The indexer robot IR is disposed between the load port LP and the center robot CR in a plan view. The center robot CR is disposed on the transport path TP.

[0025] The indexer robot IR includes one or more hands Hi that horizontally support a substrate W. The hands Hi can move parallel to both the horizontal and vertical directions. The hands Hi can rotate about a vertical line. The hands Hi can load and unload a substrate W into and from a carrier CA on any of the load ports LP, and can transfer a substrate W to and from the center robot CR.

[0026] The center robot CR includes one or more hands Hc that horizontally support a substrate W. The hands Hc can move parallel to both the horizontal and vertical directions. The hands Hc can rotate about a vertical line. The hands Hc can transfer substrates W to and from the indexer robot IR, and can transport substrates W into and out of any of the processing units 2.

[0027] Next, the processing unit 2 will be described.

[0028] Fig. 2 is a horizontal schematic view of the interior of the processing unit 2 provided in the substrate processing apparatus 1. Fig. 3 is a top schematic view of the interior of the processing unit 2.

[0029] As shown in Figure 3, the processing unit 2 includes a box-shaped chamber 4 having an internal space, a spin chuck 10 that holds a single substrate W horizontally within the chamber 4 and rotates it around a vertical rotation axis A1 passing through the center of the substrate W, and a cylindrical processing cup 21 that surrounds the spin chuck 10 around the rotation axis A1.

[0030] The chamber 4 includes a box-shaped partition 5 provided with an inlet / outlet port 5b through which the substrate W passes, and a shutter 7 for opening and closing the inlet / outlet port 5b. An FFU 6 (fan filter unit) is disposed above an air outlet 5a disposed at the top of the partition 5. The FFU 6 constantly supplies clean air (air filtered by a filter) into the chamber 4 through the air outlet 5a. The gas within the chamber 4 is exhausted from the chamber 4 through an exhaust duct 8 connected to the bottom of the processing cup 21. This constantly creates a downflow of clean air within the chamber 4. The flow rate of the exhaust air discharged into the exhaust duct 8 is changed depending on the opening degree of an exhaust valve 9 disposed in the exhaust duct 8.

[0031] The spin chuck 10 includes a disk-shaped spin base 12 held in a horizontal position, a plurality of chuck pins 11 that hold the substrate W horizontally above the spin base 12, a spin shaft 13 that extends downward from the center of the spin base 12, and a spin motor 14 that rotates the spin shaft 13 to rotate the spin base 12 and the plurality of chuck pins 11.

[0032] The spin chuck 10 is not limited to a clamping type chuck in which multiple chuck pins 11 contact the edge surface of the substrate W, but may also be a vacuum type chuck that holds the substrate W horizontally by adsorbing the back surface (lower surface) of the substrate W, which is not a device formation surface, to the upper surface 12u of the spin base 12. When the spin chuck 10 is a clamping type chuck, the multiple chuck pins 11 correspond to the substrate holder. When the spin chuck 10 is a vacuum type chuck, the spin base 12 corresponds to the substrate holder.

[0033] The processing cup 21 includes a plurality of guards 24 that receive the processing liquid discharged outward from the substrate W, a plurality of cups 23 that receive the processing liquid guided downward by the plurality of guards 24, and a cylindrical outer wall member 22 that surrounds the plurality of guards 24 and the plurality of cups 23. Figure 2 shows an example in which four guards 24 and three cups 23 are provided, and the outermost cup 23 is integrated with the third guard 24 from the top.

[0034] The guard 24 includes a cylindrical portion 25 surrounding the spin chuck 10 and an annular ceiling portion 26 extending obliquely upward from the upper end of the cylindrical portion 25 toward the rotation axis A1. The multiple ceiling portions 26 are stacked one on top of the other, and the multiple cylindrical portions 25 are arranged concentrically. The upper end of the annular ceiling portion 26 corresponds to an upper end 24u of the guard 24 surrounding the substrate W and the spin base 12 in a plan view. The multiple cups 23 are respectively arranged below the multiple cylindrical portions 25. The cups 23 form annular grooves that receive the processing liquid guided downward by the guard 24.

[0035] The processing unit 2 includes a guard lifting unit 27 that individually lifts and lowers the multiple guards 24. The guard lifting unit 27 positions the guards 24 at any position within a range from the upper position to the lower position. Fig. 2 shows a state in which two guards 24 are positioned at the upper position and the remaining two guards 24 are positioned at the lower position. The upper position is a position in which the upper ends 24u of the guards 24 are positioned above the holding position in which the substrate W held by the spin chuck 10 is positioned. The lower position is a position in which the upper ends 24u of the guards 24 are positioned below the holding position.

[0036] Processing unit 2 includes a plurality of nozzles that discharge a processing liquid toward substrate W held on spin chuck 10. The plurality of nozzles includes a first chemical liquid nozzle 31 a and a second chemical liquid nozzle 31 b that discharge a chemical liquid toward the upper surface of substrate W, and a first rinse liquid nozzle 35 a and a second rinse liquid nozzle 35 b that discharge a rinse liquid toward the upper surface of substrate W. A center nozzle 55, an inner nozzle 93, and a lower surface nozzle 71, which will be described later, are also included in the plurality of nozzles.

[0037] First chemical liquid nozzle 31a may be a scan nozzle that moves the collision position of the chemical liquid on substrate W within the upper surface of substrate W, or may be a fixed nozzle that cannot move the collision position of the chemical liquid on substrate W. The same applies to the other nozzles. Figure 2 shows an example in which first chemical liquid nozzle 31a, second chemical liquid nozzle 31b, first rinse liquid nozzle 35a, and second rinse liquid nozzle 35b are scan nozzles, and the other nozzles are fixed nozzles.

[0038] First chemical solution nozzle 31a is connected to first chemical solution pipe 32a, which guides the chemical solution to first chemical solution nozzle 31a. Second chemical solution nozzle 31b is connected to second chemical solution pipe 32b, which guides the chemical solution to second chemical solution nozzle 31b. When first chemical solution valve 33a attached to first chemical solution pipe 32a is opened, the chemical solution is continuously ejected downward from the outlet of first chemical solution nozzle 31a. Similarly, when second chemical solution valve 33b attached to second chemical solution pipe 32b is opened, the chemical solution is continuously ejected downward from the outlet of second chemical solution nozzle 31b.

[0039] FIG. 2 shows an example in which the first chemical nozzle 31a dispenses DHF and the second chemical nozzle 31b dispenses SC1. DHF (dilute hydrogen fluoride) represents dilute hydrofluoric acid. SC1 represents a liquid containing ammonium hydroxide, hydrogen peroxide, and water. The chemical dispensed from the first chemical nozzle 31a may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, hydrogen peroxide, organic acid (e.g., citric acid, oxalic acid, etc.), organic alkali (e.g., TMAH: tetramethylammonium hydroxide, etc.), surfactant, and corrosion inhibitor, or may be other liquids. The same applies to the chemical dispensed from the second chemical nozzle 31b. The chemical dispensed from the second chemical nozzle 31b is a liquid whose composition and / or temperature are different from those of the chemical dispensed from the first chemical nozzle 31a.

[0040] Although not shown, first chemical liquid valve 33a includes a valve body with an annular valve seat through which the chemical liquid passes, a valve element movable relative to the valve seat, and an actuator that moves the valve element between a closed position in which the valve element contacts the valve seat and an open position in which the valve element is spaced from the valve seat. The same applies to the other valves. The actuator may be a pneumatic actuator, an electric actuator, or another type of actuator. Control device 3 controls the actuator to open and close first chemical liquid valve 33a, etc.

[0041] The first rinse liquid nozzle 35a is connected to a first rinse liquid pipe 36a that guides the rinse liquid to the first rinse liquid nozzle 35a. The second rinse liquid nozzle 35b is connected to a second rinse liquid pipe 36b that guides the rinse liquid to the second rinse liquid nozzle 35b. When a first rinse liquid valve 37a attached to the first rinse liquid pipe 36a is opened, the rinse liquid is continuously discharged downward from the outlet of the first rinse liquid nozzle 35a. Similarly, when a second rinse liquid valve 37b attached to the second rinse liquid pipe 36b is opened, the rinse liquid is continuously discharged downward from the outlet of the second rinse liquid nozzle 35b.

[0042] FIG. 2 shows an example in which the first rinse liquid nozzle 35a and the second rinse liquid nozzle 35b discharge DIW. DIW (Deionized Water) stands for pure water (deionized water). The rinse liquid discharged from the first rinse liquid nozzle 35a may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water with a diluted concentration (e.g., approximately 10 to 100 ppm), or may be a liquid other than these. The same applies to the rinse liquid discharged from the second rinse liquid nozzle 35b. The rinse liquid discharged from the second rinse liquid nozzle 35b may have the same composition and temperature as the rinse liquid discharged from the first rinse liquid nozzle 35a, or may have a different composition and temperature.

[0043] 3, first chemical liquid nozzle 31 a and first rinse liquid nozzle 35 a are connected to first nozzle movement unit 34 a that moves first chemical liquid nozzle 31 a and first rinse liquid nozzle 35 a in at least one of the vertical and horizontal directions. First nozzle movement unit 34 a moves first chemical liquid nozzle 31 a and first rinse liquid nozzle 35 a horizontally between a processing position where the processing liquid discharged from first chemical liquid nozzle 31 a or first rinse liquid nozzle 35 a is supplied to the upper surface of substrate W and a standby position where first chemical liquid nozzle 31 a and first rinse liquid nozzle 35 a are positioned around processing cup 21 in a plan view.

[0044] Similarly, second chemical liquid nozzle 31 b and second rinse liquid nozzle 35 b are connected to second nozzle movement unit 34 b, which moves second chemical liquid nozzle 31 b and second rinse liquid nozzle 35 b in at least one of the vertical and horizontal directions. Second nozzle movement unit 34 b moves second chemical liquid nozzle 31 b and second rinse liquid nozzle 35 b horizontally between a processing position where the processing liquid discharged from second chemical liquid nozzle 31 b or second rinse liquid nozzle 35 b is supplied to the upper surface of substrate W and a standby position where second chemical liquid nozzle 31 b and second rinse liquid nozzle 35 b are positioned around processing cup 21 in a plan view.

[0045] 2, the plurality of nozzles include a lower nozzle 71 that ejects a processing liquid toward the center of the lower surface of the substrate W. The lower nozzle 71 includes a disk portion disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, and a cylindrical portion extending downward from the disk portion. The ejection port of the lower nozzle 71 opens at the center of the upper surface of the disk portion. When the substrate W is held by the spin chuck 10, the ejection port of the lower nozzle 71 faces the center of the lower surface of the substrate W in the vertical direction.

[0046] The lower surface nozzle 71 is connected to a heating fluid pipe 72 that guides hot water (pure water that is hotter than room temperature), which is an example of a heating fluid, to the lower surface nozzle 71. The pure water is heated by a heater 75 and then supplied to the lower surface nozzle 71. When a heating fluid valve 73 attached to the heating fluid pipe 72 is opened, hot water is continuously discharged upward from the discharge port of the lower surface nozzle 71 at a flow rate that corresponds to the opening of a flow rate adjustment valve 74 that changes the flow rate of the hot water. In this way, the hot water is supplied to the underside of the substrate W.

[0047] The outer peripheral surface of the lower nozzle 71 and the inner peripheral surface of the spin base 12 form a cylindrical gas flow path 82 that extends vertically. The gas flow path 82 includes a central opening 81 that opens at the center of the upper surface 12u of the spin base 12. The gas flow path 82 is connected to a gas pipe 83 that guides the inert gas to the central opening 81 of the spin base 12. The substrate processing apparatus 1 may also include a heater 86 that heats the inert gas discharged from the central opening 81 of the spin base 12. When a gas valve 84 attached to the gas pipe 83 is opened, the inert gas is continuously discharged upward from the central opening 81 of the spin base 12 at a flow rate that corresponds to the aperture of a flow rate adjustment valve 85 that changes the flow rate of the inert gas.

[0048] The inert gas discharged from the central opening 81 of the spin base 12 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas. When the substrate W is held by the spin chuck 10, the nitrogen gas is discharged from the central opening 81 of the spin base 12, and the nitrogen gas flows radially in all directions between the lower surface of the substrate W and the upper surface 12u of the spin base 12. This fills the space between the substrate W and the spin base 12 with nitrogen gas.

[0049] The processing unit 2 includes a blocking member 51 arranged above the spin chuck 10. Figure 2 shows an example in which the blocking member 51 is a disk-shaped blocking plate. The blocking member 51 includes a disk portion 52 arranged horizontally above the spin chuck 10. The blocking member 51 is supported horizontally by a cylindrical support shaft 53 extending upward from the center of the disk portion 52. The central axis of the disk portion 52 is located on the rotation axis A1 of the substrate W. The lower surface of the disk portion 52 corresponds to the lower surface 51L of the blocking member 51. The lower surface 51L of the blocking member 51 is parallel to the upper surface of the substrate W and has an outer diameter equal to or greater than the diameter of the substrate W.

[0050] The blocking member 51 is connected to a blocking member lifting unit 54 that vertically raises and lowers the blocking member 51. The blocking member lifting unit 54 positions the blocking member 51 at any position within a range from an upper position (the position shown in FIG. 2 ) to a lower position. The lower position is a proximity position where a lower surface 51L of the blocking member 51 is close to the upper surface of the substrate W to a height where a scan nozzle such as the first chemical liquid nozzle 31 a cannot enter between the substrate W and the blocking member 51. The upper position is a standby position where the blocking member 51 is retracted to a height where a scan nozzle can enter between the blocking member 51 and the substrate W.

[0051] The multiple nozzles include a central nozzle 55 that discharges a processing fluid such as a processing liquid or a processing gas downward through a central opening 61 that opens in the center of the lower surface 51L of the blocking member 51. The central nozzle 55 extends vertically along the rotation axis A1. The central nozzle 55 is disposed in a through-hole that passes vertically through the center of the blocking member 51. The inner peripheral surface of the blocking member 51 surrounds the outer peripheral surface of the central nozzle 55 with a gap therebetween. The central nozzle 55 moves up and down together with the blocking member 51. The discharge port of the central nozzle 55, which discharges the processing fluid, is disposed above the central opening 61 of the blocking member 51.

[0052] The central nozzle 55 is connected to a sublimable substance-containing liquid pipe 40 that guides the sublimable substance-containing liquid to the central nozzle 55, and a substitution liquid pipe 44 that guides the substitution liquid to the central nozzle 55. When a sublimable substance-containing liquid valve 41 attached to the sublimable substance-containing liquid pipe 40 is opened, the sublimable substance-containing liquid is continuously discharged downward from the outlet of the central nozzle 55. Similarly, when a substitution liquid valve 45 attached to the substitution liquid pipe 44 is opened, the substitution liquid is continuously discharged downward from the outlet of the central nozzle 55. FIG. 2 shows an example in which the substitution liquid is IPA (isopropyl alcohol). The central nozzle 55 is an example of a sublimable substance-containing liquid nozzle. The central nozzle 55 is also an example of a substitution liquid nozzle.

[0053] The sublimable substance-containing liquid is a solution containing a sublimable substance corresponding to a solute and a solvent that dissolves in the sublimable substance. The sublimable substance-containing liquid may further contain a substance other than the sublimable substance and the solvent. The sublimable substance may be a substance that changes from a solid to a gas without passing through a liquid state at room temperature (synonymous with room temperature) or at normal pressure (pressure inside the substrate processing apparatus 1, for example, 1 atmosphere or a value thereabout).

[0054] The freezing point of the sublimable substance-containing liquid (freezing point at 1 atmosphere; the same applies below) is lower than room temperature (for example, 20 to 30°C). The substrate processing apparatus 1 is placed in a clean room maintained at room temperature. Therefore, the sublimable substance-containing liquid can be maintained in a liquid state without heating the sublimable substance-containing liquid. The freezing point of the sublimable substance is higher than the freezing point of the sublimable substance-containing liquid. The freezing point of the sublimable substance is higher than room temperature. At room temperature, the sublimable substance is solid. The freezing point of the sublimable substance may be higher than the boiling point of the solvent. The vapor pressure of the solvent is higher than the vapor pressure of the sublimable substance.

[0055] The sublimable substance may be, for example, any of alcohols such as 2-methyl-2-propanol (also known as tert-butyl alcohol, t-butyl alcohol, or tertiary butyl alcohol) and cyclohexanol, fluorohydrocarbon compounds, 1,3,5-trioxane (also known as metaformaldehyde), camphor (also known as camphor), naphthalene, and iodine, or may be a substance other than these. The sublimable substance may also be cyclohexanone oxime, pinacoline oxime, or acetophenone oxime.

[0056] The solvent may be at least one selected from the group consisting of pure water, IPA, methanol, HFE (hydrofluoroether), acetone, PGMEA (propylene glycol monomethyl ether acetate), PGEE (propylene glycol monoethyl ether, 1-ethoxy-2-propanol), and ethylene glycol. IPA has a higher vapor pressure than water and a lower surface tension than water.

[0057] As will be described later, the substitute liquid is supplied to the upper surface of the substrate W covered with a liquid film of the rinse liquid, and the sublimable substance-containing liquid is supplied to the upper surface of the substrate W covered with a liquid film of the substitute liquid. The substitute liquid may be any liquid as long as it is soluble in both the rinse liquid and the sublimable substance-containing liquid. The substitute liquid is, for example, IPA (liquid). The substitute liquid may be a mixture of IPA and HFE, or may be other liquids.

[0058] The central nozzle 55 is connected to a gas pipe 56 that guides an inert gas to the central nozzle 55. The substrate processing apparatus 1 may include a heater 59 that heats the inert gas discharged from the central nozzle 55. When a gas valve 57 attached to the gas pipe 56 is opened, the inert gas is continuously discharged downward from the discharge port of the central nozzle 55 at a flow rate that corresponds to the opening of a flow rate adjustment valve 58 that changes the flow rate of the inert gas. The inert gas discharged from the central nozzle 55 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

[0059] The inner circumferential surface of the blocking member 51 and the outer circumferential surface of the central nozzle 55 form a cylindrical gas flow path 62 extending vertically. The gas flow path 62 is connected to a gas pipe 63 that guides inert gas to the central opening 61 of the blocking member 51. The substrate processing apparatus 1 may include a heater 66 that heats the inert gas discharged from the central opening 61 of the blocking member 51. When a gas valve 64 attached to the gas pipe 63 is opened, the inert gas is continuously discharged downward from the central opening 61 of the blocking member 51 at a flow rate corresponding to the aperture of a flow rate adjustment valve 65 that changes the flow rate of the inert gas. The inert gas discharged from the central opening 61 of the blocking member 51 is nitrogen gas. The inert gas may be a gas other than nitrogen gas, such as helium gas or argon gas.

[0060] 2, the processing unit 2 includes a heater 90 that heats the substrate W held on the spin chuck 10, an inner nozzle 93 that supplies gas between the substrate W held on the spin chuck 10 and the heater 90, and an exhaust guide 94 that sucks in the gas supplied by the inner nozzle 93 between the substrate W and the heater 90. The processing unit 2 further includes a heater moving unit 96 that moves the heater 90, the inner nozzle 93, and the exhaust guide 94 (hereinafter also referred to as "heater 90, etc.") relative to the substrate W held on the spin chuck 10.

[0061] As shown in FIG. 3 , the heater movement unit 96 includes a drive actuator 96ac that generates power to move the heater 90 and other components, and a support arm 96ar that transmits the power of the drive actuator 96ac to the heater 90 and other components. The support arm 96ar is an example of a transmission element that transmits the power of the drive actuator 96ac to the heater 90 and other components. The heater 90 and other components are attached to the support arm 96ar. The support arm 96ar includes a head 96h that overlaps the heater 90 in a plan view, and a shaft 96s that extends horizontally from the head 96h. The power of the drive actuator 96ac is transmitted to the shaft 96s, head 96h, and heater 90 in this order.

[0062] The drive actuator 96ac moves the heater 90 etc. between a processing position and a standby position. The positions of the heater 90 etc. depicted by two-dot chain lines in Fig. 3 are processing positions. The positions of the heater 90 etc. depicted by solid lines in Fig. 3 are standby positions. The processing position is a position where the heater 90 is disposed above the substrate W held on the spin chuck 10 so that the heater 90 overlaps the substrate W in a plan view. The standby position is a position where the heater 90 does not overlap the substrate W held on the spin chuck 10 in a plan view.

[0063] The drive actuator 96ac rotates the heater 90 and other components around a rotation axis A2 that extends vertically outside the processing cup 21, thereby moving the heater 90 and other components horizontally along an arc-shaped path in a plan view. Because the radius of the arc-shaped path is large, the heater 90 and other components move horizontally along a path that can be considered a straight line in a plan view. The drive actuator 96ac may translate the heater 90 and other components horizontally instead of rotating them.

[0064] The drive actuator 96ac is a device that converts drive energy, such as electrical, fluid, magnetic, thermal, or chemical energy, into mechanical work. Examples of the drive actuator 96ac include electric motors (rotary motors), linear motors, air cylinders, and other devices. When the drive actuator 96ac is an electric motor that moves the heater 90 or the like horizontally in parallel, the rotation of the drive actuator 96ac may be converted into linear motion of the heater 90 or the like by a motion converter such as a ball screw and ball nut.

[0065] Next, the heater 90 and the inner nozzle 93 will be described.

[0066] Fig. 4 is a cross-sectional view of the heater 90, inner nozzle 93, and exhaust guide 94 taken along a plane including the central axis CL of the light source cover 92. Fig. 5 is a schematic view of the heater 90, inner nozzle 93, and exhaust guide 94 as viewed from below. Fig. 6 is an enlarged view of a portion of Fig. 4. In Fig. 5, the discharge port 93d of the inner nozzle 93 and the suction port 95i of the exhaust guide 94 are shaded in black.

[0067] The central axis CL of the light source cover 92 is an imaginary straight line. Figures 4 to 6 show an example in which the central axis CL is a straight line that passes through the center of the central opening 92op of the light source cover 92 and extends in a direction perpendicular to the underside 92sL of the light source cover 92. In the following description, the axial direction Da of the light source cover 92 represents a direction parallel to the central axis CL, the radial direction Dr of the light source cover 92 represents a direction perpendicular to the central axis CL, and the circumferential direction Dc of the light source cover 92 represents a direction around the central axis CL. When the central axis CL is vertical, the axial direction Da of the light source cover 92 corresponds to the vertical direction and the up-down direction.

[0068] As described above, the processing unit 2 includes a heater 90 that heats the substrate W and an inner nozzle 93 that supplies gas between the substrate W and the heater 90. The heater 90 heats the substrate W held on the spin chuck 10 by irradiating the substrate W with light. As shown in Fig. 4, the heater 90 includes a light source 91 that emits light such as visible light or infrared light when supplied with power, and a light source cover 92 that covers the light source 91.

[0069] The light source cover 92 includes a bottom wall 92b disposed below the light source 91, an inner peripheral wall 92i surrounding the central axis CL of the light source cover 92 on the central axis CL side of the light source 91, an outer peripheral wall 92o surrounding the central axis CL of the light source 91 and the light source cover 92, and a plate-shaped top wall 92t protruding inward from the upper end of the outer peripheral wall 92o around the entire circumference of the outer peripheral wall 92o. Figures 4 and 5 show an example in which the bottom wall 92b is a horizontal disk with a circular hole in the center, the outer peripheral wall 92o and the inner peripheral wall 92i are two vertical concentric cylinders, and the top wall 92t is a horizontal plate-shaped ring concentric with the outer peripheral wall 92o and the inner peripheral wall 92i.

[0070] The inner peripheral wall 92i extends from the inner periphery of the bottom wall 92b toward the opposite side from the substrate W. The outer peripheral wall 92o extends from the outer periphery of the bottom wall 92b toward the opposite side from the substrate W. The inner peripheral wall 92i is longer in the axial direction Da of the light source cover 92 than the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is located higher than the upper end of the outer peripheral wall 92o. The upper end of the inner peripheral wall 92i is located higher than the upper surface of the top wall 92t. The top wall 92t and the outer peripheral wall 92o surround the inner peripheral wall 92i. The inner periphery of the top wall 92t and the inner periphery of the outer peripheral wall 92o are horizontally spaced apart from the outer periphery of the inner peripheral wall 92i around the entire periphery of the light source cover 92. The inner periphery of the top wall 92t is located outside the light source 91.

[0071] When the light source 91 emits light while the heater 90 is disposed above the substrate W, the light from the light source 91 passes through the bottom wall 92b and is irradiated onto the upper surface of the substrate W. This heats the upper surface of the substrate W. Materials between the light source 91 and the substrate W, such as the bottom wall 92b, are also heated by the light from the light source 91. The bottom wall 92b is made of a transparent material that transmits light, such as quartz. FIG. 4 shows an example in which the entire light source cover 92 is a single member made of quartz. In this example, the bottom wall 92b is integral with the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t. At least one of the inner peripheral wall 92i, the outer peripheral wall 92o, and the top wall 92t may be a separate member fixed to the bottom wall 92b.

[0072] 6, the surface of the light source cover 92 includes an inner circumferential surface 92si that surrounds the central axis CL of the light source cover 92, and an outer circumferential surface 92so that surrounds the central axis CL of the light source cover 92 outside the inner circumferential surface 92si. The surface of the light source cover 92 further includes an upper surface 92su that extends inward from the upper end of the outer circumferential surface 92so of the light source cover 92, and a lower surface 92sL that extends from the lower end of the inner circumferential surface 92si of the light source cover 92 to the lower end of the outer circumferential surface 92so of the light source cover 92. FIG. 6 shows an example in which the bottom wall 92b and the inner circumferential surfaces of the inner circumferential wall 92i correspond to the inner circumferential surface 92si of the light source cover 92. In this example, the outer surfaces of the bottom wall 92b and the outer wall 92o correspond to the outer surface 92so of the light source cover 92, the lower surface of the bottom wall 92b corresponds to the lower surface 92sL of the light source cover 92, and the upper surfaces of the outer wall 92o and the top wall 92t correspond to the upper surface 92su of the light source cover 92.

[0073] The inner peripheral surface 92si of the light source cover 92 is a vertical cylindrical surface (excluding the top and bottom surfaces, which are parallel circular planes) with a constant or nearly constant diameter. The same is true for the outer peripheral surface 92so of the light source cover 92. The outer peripheral surface 92so of the light source cover 92 is concentric with the inner peripheral surface 92si of the light source cover 92. The diameter of part or all of the inner peripheral surface 92si of the light source cover 92 may change stepwise or continuously as one approaches the lower end of the inner peripheral surface 92si of the light source cover 92. The horizontal cross section of the inner peripheral surface 92si of the light source cover 92 may have a shape other than a circle. The same is true for the outer peripheral surface 92so of the light source cover 92 in terms of diameter and cross section. The outer peripheral surface 92so of the light source cover 92 may be eccentric with respect to the inner peripheral surface 92si of the light source cover 92, or may have a shape that is not similar to the inner peripheral surface 92si of the light source cover 92.

[0074] The upper surface 92su of the light source cover 92 is an annular horizontal surface concentric with the inner peripheral surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is a circular horizontal surface concentric with the inner peripheral surface 92si of the light source cover 92. The lower surface 92sL of the light source cover 92 is an example of an opposing surface that directly faces the upper surface of the substrate W. The lower surface 92sL of the light source cover 92 corresponds to the lower surface of the heater 90. The size of the light source cover 92 corresponds to the size of the heater 90. The light source cover 92 is smaller than the substrate W in a planar view. Therefore, the lower surface 92sL of the light source cover 92 is also smaller than the substrate W in a planar view. The outer diameter of the lower surface 92sL of the light source cover 92 may be less than the radius of the substrate W.

[0075] 5 shows an example in which the lower surface 92sL of the light source cover 92 is a circular horizontal surface with a circular hole in the center. The lower surface 92sL of the light source cover 92 includes an inner periphery 92ci that surrounds the central axis CL of the light source cover 92 and an outer periphery 92co that surrounds the inner periphery 92ci. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 is a circle whose center is located on the central axis CL of the light source cover 92. The outer periphery 92co of the lower surface 92sL of the light source cover 92 is a circle concentric with the inner periphery 92ci of the lower surface 92sL of the light source cover 92. The inner periphery 92ci of the lower surface 92sL of the light source cover 92 may have a shape other than a circle. The same applies to the outer periphery 92co of the lower surface 92sL of the light source cover 92. The outer periphery 92co of the lower surface 92sL of the light source cover 92 may be eccentric with respect to the inner periphery 92ci of the lower surface 92sL of the light source cover 92, or may have a shape that is not similar to the inner periphery 92ci of the lower surface 92sL of the light source cover 92.

[0076] As shown in FIG. 6 , the inner circumferential surface 92si of the light source cover 92 opens at the lower surface 92sL of the light source cover 92. The lower end of the inner circumferential surface 92si of the light source cover 92 corresponds to the inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92. The inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92 forms a central opening 92op that opens at the center of the lower surface 92sL of the light source cover 92. In the example shown in FIG. 6 , the central opening 92op is a circle whose center is located on the central axis CL of the light source cover 92. The inner circumferential surface 92ci of the lower surface 92sL of the light source cover 92 corresponds to the outer periphery of the central opening 92op. The space inside the inner circumferential surface 92si of the light source cover 92 is connected to the space below the lower surface 92sL of the light source cover 92 through the central opening 92op.

[0077] 6 shows an example in which the lower surface 92sL of the light source cover 92 is horizontal from the inner periphery 92ci of the lower surface 92sL of the light source cover 92 to the outer periphery 92co of the lower surface 92sL of the light source cover 92. The lower surface 92sL of the light source cover 92 may be a curved surface whose inclination angle with respect to the horizontal plane changes continuously, or may be an inclined surface inclined at a constant angle with respect to the horizontal plane. The lower surface 92sL of the light source cover 92 may include a horizontal portion as well as at least one of a curved portion, an inclined portion, and a vertical portion.

[0078] The light source cover 92 houses the light source 91. The light source 91 is a halogen lamp. The light source 91 may be an LED (light emitting diode) lamp, a xenon lamp, a carbon heater, a laser light source such as a VCSEL (Vertical Cavity Surface Emitting Laser), or any other light source.

[0079] FIG. 6 shows an example in which the light source 91 includes a rod-shaped arc tube 91p that emits light and two end blocks 91b attached to both ends of the arc tube 91p. The arc tube 91p includes a horizontal annular portion 91a that surrounds the central axis CL of the light source cover 92 and two linear portions 91s extending upward from both ends of the annular portion 91a. The annular portion 91a surrounds the inner peripheral wall 92i above the bottom wall 92b. The annular portion 91a is positioned below the top wall 92t. The linear portion 91s extends upward from the annular portion 91a to the end block 91b. The linear portion 91s is positioned between the inner peripheral wall 92i and the outer peripheral wall 92o. The upper end of the end block 91b is positioned above the upper surface 92su of the light source cover 92. The end block 91b is removably fixed to a ring 96r (described later). The arc tube 91p is suspended from the support arm 96ar via two end blocks 91b.

[0080] The heater 90 may or may not include a reflector 91r that reflects light from the light source 91 toward the bottom wall 92b. The heater 90 may or may not include a heat sink 91h that cools the inside of the light source cover 92. FIG. 4 shows an example in which the reflector 91r and the heat sink 91h are provided. The reflector 91r and the heat sink 91h are disposed between the inner circumferential wall 92i and the outer circumferential wall 92o. The reflector 91r is disposed above the annular portion 91a. The heat sink 91h is disposed above the reflector 91r. The heat sink 91h may be an air-cooled heat sink that is cooled by airflow, or may be a water-cooled heat sink provided with a flow path through which a cooling liquid flows.

[0081] The inner nozzle 93 is inserted into the space inside the inner circumferential wall 92i of the light source cover 92. The inner nozzle 93 is cylindrical and surrounds the central axis CL of the light source cover 92 inside the inner circumferential wall 92i of the light source cover 92. The inner nozzle 93 may be concentric with the inner circumferential wall 92i of the light source cover 92, or may be eccentric relative to the inner circumferential wall 92i of the light source cover 92. Figure 6 shows an example of the former. The inner nozzle 93 protrudes upward from the inner circumferential wall 92i of the light source cover 92. The inner nozzle 93 extends downward from a ring cover 96c, which will be described later.

[0082] The inner nozzle 93 includes a cylindrical inner surface that surrounds the central axis CL of the light source cover 92, and a cylindrical outer surface that surrounds the central axis CL of the light source cover 92 outside the inner surface of the inner nozzle 93. The inner and outer surfaces of the inner nozzle 93 are vertical cylindrical surfaces with a constant diameter. The diameter of part or all of the inner surface of the inner nozzle 93 may change stepwise or continuously as one approaches the lower end of the inner surface of the inner nozzle 93. The same applies to the outer surface of the inner nozzle 93. The outer surface of the inner nozzle 93 is separated from the inner wall 92i of the light source cover 92 at all positions. The outer surface of the inner nozzle 93 may be in contact with the inner wall 92i of the light source cover 92.

[0083] The inner nozzle 93 includes one or more outlets 93d opening on the surface of the inner nozzle 93 and an internal flow path 93f that guides the gas to be discharged from each outlet 93d. Fig. 6 shows an example in which there is one outlet 93d. In this example, the outlet 93d opens on the lower surface of the inner nozzle 93, and the internal flow path 93f extends upward from the outlet 93d along the central axis CL of the light source cover 92. If the outer peripheral surface of the inner nozzle 93 is separated from the inner peripheral surface 92si of the light source cover 92, one or more outlets 93d may open on the outer peripheral surface of the inner nozzle 93.

[0084] The outlet 93d of the inner nozzle 93 is disposed above the lower surface 92sL of the light source cover 92. The central opening 92op of the light source cover 92 is disposed below the outlet 93d of the inner nozzle 93. The outlet 93d may be disposed at the same height as the lower surface 92sL of the light source cover 92, or may be disposed below the lower surface 92sL of the light source cover 92. Figure 6 shows an example in which the vertical distance from the lower surface 92sL of the light source cover 92 to the outlet 93d is smaller than the diameter of the outlet 93d, and the outlet 93d is disposed at the same or approximately the same height as the upper surface of the bottom wall 92b of the light source cover 92.

[0085] The inner nozzle 93 discharges gas vertically downward from the discharge port 93 d, thereby forming a cylindrical air flow whose diameter is equal to or approximately equal to the diameter of the discharge port 93 d, or a truncated conical air flow whose diameter continuously increases with increasing distance from the discharge port 93 d. As long as the gas discharged from the inner nozzle 93 is supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W, the direction in which the gas is discharged from the discharge port 93 d may be any of an obliquely upward direction, an obliquely downward direction, and a horizontal direction.

[0086] The substrate processing apparatus 1 includes an oxidizing gas pipe 93po that guides the oxidizing gas to be discharged from the inner nozzle 93, and an inert gas pipe 93pi that guides the inert gas to be discharged from the inner nozzle 93. Fig. 6 shows an example in which the oxidizing gas is ozone gas and the inert gas is nitrogen gas.

[0087] The oxidizing gas is a gas that oxidizes organic matter to vaporize the organic matter. As long as the oxidizing gas can vaporize organic matter by oxidation, the oxidizing gas may be oxygen gas, which has a higher oxygen concentration than air, or a gas other than ozone gas and oxygen gas. The organic matter may be a substance contained in the sublimable substance-containing liquid, a substance that remains on the substrate W after the sublimable substance is sublimated, or a substance other than these. The organic matter may be solid, liquid, or semi-solid.

[0088] The substrate processing apparatus 1 includes an oxidizing gas valve 93vo that switches between an open state that allows oxidizing gas to pass through the oxidizing gas pipe 93po toward the inner nozzle 93 and a closed state that stops oxidizing gas from flowing through the oxidizing gas pipe 93po toward the inner nozzle 93, and a flow rate adjustment valve 93fo that changes the flow rate of oxidizing gas supplied from the oxidizing gas pipe 93po to the inner nozzle 93. The substrate processing apparatus 1 further includes an inert gas valve 93vi that switches between an open state that allows inert gas to pass through the inert gas pipe 93pi toward the inner nozzle 93 and a closed state that stops inert gas from flowing through the inert gas pipe 93pi toward the inner nozzle 93, and a flow rate adjustment valve 93fi that changes the flow rate of inert gas supplied from the inert gas pipe 93pi to the inner nozzle 93.

[0089] When the oxidizing gas valve 93vo is opened, that is, when the oxidizing gas valve 93vo is switched from a closed state to an open state, oxidizing gas is supplied from the oxidizing gas pipe 93po to the inner nozzle 93 at a flow rate corresponding to the aperture of the flow rate adjustment valve 93fo, and is discharged from the outlet 93d of the inner nozzle 93. Similarly, when the inert gas valve 93vi is opened, inert gas is supplied from the inert gas pipe 93pi to the inner nozzle 93 at a flow rate corresponding to the aperture of the flow rate adjustment valve 93fi, and is discharged from the outlet 93d of the inner nozzle 93. When both the oxidizing gas valve 93vo and the inert gas valve 93vi are opened, a mixed gas of oxidizing gas and inert gas is discharged from the outlet 93d of the inner nozzle 93. The ratio of oxidizing gas to inert gas contained in the mixed gas changes depending on the apertures of the flow rate adjustment valves 93fo and 93fi.

[0090] As described above, the oxidizing gas is a gas that oxidizes organic matter and vaporizes the organic matter. The oxidizing gas is a gas that contains an oxidizing substance, such as ozone, that has oxidizing power. The higher the concentration of the oxidizing substance in the gas discharged from the inner nozzle 93, the more preferable it is. However, if the oxidizing gas comes into contact with a component that is not resistant to the oxidizing gas, the component may be corroded by the oxidizing gas. To prevent such corrosion, the concentration of the oxidizing substance in the mixed gas of the oxidizing gas and the inert gas may be adjusted to a value that can oxidize and vaporize organic matter and prevent corrosion of components other than the heater 90, etc.

[0091] The gas to be discharged from the inner nozzle 93 may be heated before being supplied to the inner nozzle 93, or may be supplied to the inner nozzle 93 without being heated. Fig. 6 shows an example of the former. In this example, the substrate processing apparatus 1 includes a gas heater 93h that heats the gas before being supplied to the inner nozzle 93. When at least one of the oxidizing gas valve 93vo and the inert gas valve 93vi is opened, at least one of the oxidizing gas and the inert gas is heated by the gas heater 93h and then supplied to the inner nozzle 93.

[0092] The light source 91, light source cover 92, and inner nozzle 93 are supported by a support arm 96ar. As described above, the support arm 96ar includes a head 96h that overlaps the heater 90 in a plan view and a shaft 96s that extends horizontally from the head 96h. The head 96h is disposed above the light source cover 92. The head 96h corresponds to a lid for the light source cover 92 that covers the entire internal space of the light source cover 92 from above. The head 96h, together with the light source cover 92, form an enclosed space that houses the light source 91. The light source 91 is disposed between the head 96h and the light source cover 92 in the up-down direction.

[0093] As shown in FIG. 4 , the head 96h includes a ring 96r that surrounds the central axis CL of the light source cover 92 above the heater 90, and a ring cover 96c that closes the space inside the ring 96r from above the ring 96r. The ring 96r is disposed above the light source cover 92. The lower surface of the ring 96r directly or indirectly faces the light source cover 92 from above. The lower surface of the ring 96r is a horizontal plane. The ring 96r surrounds the upper end of the end block 91b, which corresponds to the upper end of the light source 91. The ring cover 96c is disposed above the light source 91 and the ring 96r. The ring cover 96c is removably fixed to the ring 96r. FIG. 4 shows an example in which the ring cover 96c is fixed to the ring 96r by a bolt B1.

[0094] The support arm 96ar further includes an inner ring 96i that surrounds the inner nozzle 93 and the inner peripheral wall 92i of the light source cover 92. The inner ring 96i is removably fixed to the ring cover 96c. The inner ring 96i is disposed below the ring cover 96c. The inner ring 96i protrudes downward from the center of the ring cover 96c. The inner ring 96i surrounds the central axis CL of the light source cover 92 inside the ring 96r. The inner nozzle 93 passes vertically inside the inner ring 96i. The inner peripheral wall 92i of the light source cover 92 is inserted into the inner ring 96i. The upper end of the inner peripheral wall 92i is disposed inside the inner ring 96i. The lower surface of the inner ring 96i, which corresponds to the lower end of the inner ring 96i, is disposed higher than the lower surface of the ring 96r.

[0095] The substrate processing apparatus 1 includes a seal ring 96si that seals the gap between the inner nozzle 93 and the inner ring 96i or the gap between the inner circumferential wall 92i and the inner ring 96i. FIG. 4 shows an example in which the seal ring 96si seals the gap between the inner circumferential wall 92i and the inner ring 96i. The seal ring 96si may be an O-ring or a ring-shaped packing, or may be something other than these. The seal ring 96si surrounds the entire periphery of the inner circumferential wall 92i between the inner circumferential wall 92i and the inner ring 96i. The seal ring 96si is in close contact with both the inner circumferential wall 92i and the inner ring 96i.

[0096] The inside of the light source cover 92 needs to be sealed to prevent liquids such as the processing liquid or mist containing this liquid from entering the light source cover 92. In particular, it is necessary to prevent oxidizing gases, which have strong oxidizing power, from entering the light source cover 92. On the other hand, because the light source cover 92 is removed from the support arm 96ar when replacing the light source 91, the detachability of the light source cover 92 also needs to be considered.

[0097] The seal ring 96si closes the gap between the light source cover 92 and the support arm 96ar, preventing unwanted gases or liquids, such as oxidizing gas, from entering the light source cover 92. Figure 6 shows an example in which the vertical distance from the upper end of the inner circumferential wall 92i to the upper end of the seal ring 96si is shorter than the outer diameter of the inner circumferential wall 92i. In this example, the insertion amount of the inner circumferential wall 92i into the seal ring 96si is small, making it easy to attach and detach the light source cover 92 to and from the seal ring 96si.

[0098] As shown in FIG. 6, the support arm 96ar includes a support bracket 96bs that supports the light source cover 92 below the lower surface of the ring 96r, an upper bracket 96bu that is positioned above the support bracket 96bs, and one or more bolts B2 that move the support bracket 96bs up and down relative to the upper bracket 96bu.

[0099] 6 shows an example in which the support bracket 96bs is supported by a lower bracket 96bL disposed below the support bracket 96bs. In this example, the lower bracket 96bL moves up and down relative to the upper bracket 96bu, changing the vertical distance between the upper bracket 96bu and the support bracket 96bs. The support bracket 96bs supports the light source cover 92 by contacting the underside of the top wall 92t of the light source cover 92. The support bracket 96bs may contact a surface of the light source cover 92 other than the underside of the top wall 92t, or may indirectly support the light source cover 92.

[0100] The upper bracket 96bu is spaced upward from the support bracket 96bs. The lower bracket 96bL is in contact with the underside of the support bracket 96bs. A bolt B2 passes vertically through the upper bracket 96bu, the support bracket 96bs, and the lower bracket 96bL. The lower bracket 96bL is suspended from the upper bracket 96bu by the bolt B2. The male thread of the upper bracket 96bu engages with the female thread of the lower bracket 96bL. Rotating the bolt B2 relative to the upper bracket 96bu moves the lower bracket 96bL closer to or further away from the upper bracket 96bu. This increases or decreases the vertical distance between the upper bracket 96bu and the support bracket 96bs.

[0101] The support bracket 96bs is movable up and down relative to the head 96h between a fixed position where the light source cover 92 is fixed to the head 96h and an attachment / detachment position where the light source cover 92 is attached to and detached from the head 96h. Figure 6 shows the support bracket 96bs in the fixed position.

[0102] When attaching the light source cover 92 to the head 96h, the upper surface 92su of the light source cover 92, including the upper surface of the top wall 92t, is separated from the lower surface of the ring 96r, and the lower surface of the top wall 92t is brought into contact with the support bracket 96bs, which is positioned in the attachment / detachment position. In this state, when the support bracket 96bs is moved upward relative to the upper bracket 96bu, the support bracket 96bs is positioned in the fixed position, and the upper surface 92su of the light source cover 92 is pressed against the lower surface of the ring 96r. This secures the light source cover 92 to the head 96h.

[0103] When removing the light source cover 92 from the head 96h, the support bracket 96bs is lowered from the fixed position to the detachment position. This causes the upper surface 92su of the light source cover 92 to separate from the lower surface of the ring 96r, with the lower surface of the top wall 92t in contact with the support bracket 96bs. When the support bracket 96bs is in the fixed position, the gap between the light source cover 92 and the ring 96r may be sealed with a seal ring 96so, such as an O-ring. Figure 6 shows an example in which the seal ring 96so is disposed in an annular groove recessed upward from the lower surface of the ring 96r. The seal ring 96so is interposed between the light source cover 92 and the ring 96r around the entire circumference of the light source cover 92.

[0104] When the light source cover 92 is fixed to the head 96h, at least a portion of the support bracket 96bs is positioned below the lower surface of the top wall 92t. At least a portion of the lower bracket 96bL is also positioned below the lower surface of the top wall 92t. The lower bracket 96bL can pass through the inside of the top wall 92t. The support bracket 96bs may be able to pass through the inside of the top wall 92t, or may not be able to pass through the inside of the top wall 92t. In the latter case, the support bracket 96bs may include multiple split brackets that can move horizontally relative to the lower bracket 96bL. In this case, after the split bracket is positioned below the top wall 92t, the multiple split brackets can be moved horizontally relative to the lower bracket 96bL so that a portion of each split bracket is positioned directly below the top wall 92t.

[0105] Next, the exhaust guide 94 will be described.

[0106] Fig. 7A is an enlarged view of a portion of Fig. 4. Fig. 7B is a cross-sectional view of the exhaust guide 94. The two-dot chain line in Fig. 7A represents a vertical cylindrical surface whose central axis coincides with the central axis CL of the light source cover 92. Fig. 7B shows a cross-section of the exhaust guide 94 along this cylindrical surface. In Figs. 7A and 7B, the exhaust ring 94r is depicted as a single, integrated member. However, the exhaust ring 94r may be composed of multiple members fixed to one another.

[0107] As described above, the processing unit 2 includes an exhaust guide 94 that sucks in gas supplied between the substrate W and the heater 90 by the inner nozzle 93. The exhaust guide 94 is cylindrical and surrounds the central axis CL of the light source cover 92. The exhaust guide 94 includes an exhaust ring 94r that surrounds the central axis CL of the light source cover 92, a flange 94f that protrudes outward from the upper end of the exhaust ring 94r around the entire circumference of the exhaust ring 94r, and an exhaust tube 94t that protrudes outward from the exhaust ring 94r at a position below the flange 94f. Figure 7A shows an example in which the exhaust ring 94r is a vertical cylinder, the flange 94f is a horizontal plate-shaped ring concentric with the exhaust ring 94r, and the exhaust tube 94t is a horizontal cylinder.

[0108] The exhaust guide 94 is supported by a support arm 96ar. The exhaust guide 94 is suspended from the support arm 96ar. The exhaust guide 94 overlaps the support arm 96ar in a plan view. Fig. 7A shows an example in which the exhaust guide 94 is removably fixed to the support arm 96ar by a bolt B3 inserted into a through-hole that passes vertically through the flange 94f. The method of fixing the exhaust guide 94 to the support arm 96ar is not limited to this.

[0109] The flange 94f of the exhaust guide 94 and the top wall 92t of the light source cover 92 are disposed on opposite sides of the exhaust ring 94r of the exhaust guide 94 and the outer peripheral wall 92o of the light source cover 92. When the exhaust guide 94 and the light source cover 92 are fixed to the support arm 96ar, at least a portion of the flange 94f is disposed at the same height as the top wall 92t. Figure 7A shows an example in which the upper surface of the flange 94f is disposed at the same height as the upper surface of the top wall 92t, and the lower surface of the flange 94f is disposed below the lower surface of the top wall 92t. The entire flange 94f may be disposed above or below the top wall 92t.

[0110] The exhaust guide 94 includes an inner circumferential surface 94si that surrounds the central axis CL of the light source cover 92, and an outer circumferential surface 94so that surrounds the central axis CL of the light source cover 92 outside the inner circumferential surface 94si. The exhaust guide 94 further includes an upper surface 94su that is located at the top of the exhaust guide 94, and a lower surface 94sL that is located at the bottom of the exhaust guide 94.

[0111] 7A shows an example in which the inner peripheral surface of the exhaust ring 94r corresponds to the inner peripheral surface 94si of the exhaust guide 94. In this example, the outer peripheral surface of the exhaust ring 94r corresponds to the outer peripheral surface 94so of the exhaust guide 94, the upper surfaces of the exhaust ring 94r and flange 94f correspond to the upper surface 94su of the exhaust guide 94, and the lower surface of the exhaust ring 94r corresponds to the lower surface 94sL of the exhaust guide 94. The outer peripheral surface of the exhaust ring 94r extends downward from the lower surface of the flange 94f.

[0112] 7A , the upper surface 94su and the lower surface 94sL of the exhaust guide 94 are two annular horizontal surfaces. The lower surface 94sL of the exhaust guide 94 directly faces the upper surface of the substrate W. The exhaust guide 94 is smaller than the substrate W in a plan view. The outer diameter of the lower surface 94sL of the exhaust guide 94 may be less than the radius of the substrate W. The outer diameter of the lower surface 94sL of the exhaust guide 94 is greater than the height of the exhaust guide 94 (the vertical distance from the lower surface 94sL of the exhaust guide 94 to the upper surface 94su of the exhaust guide 94).

[0113] The inner peripheral surface 94si and the outer peripheral surface 94so of the exhaust guide 94 are disposed between the upper surface 94su and the lower surface 94sL of the exhaust guide 94. The inner peripheral surface 94si of the exhaust guide 94 is a vertical cylindrical surface. The outer peripheral surface 94so of the exhaust guide 94 is a vertical cylindrical surface that is concentric with the inner peripheral surface 94si of the exhaust guide 94. The central axes of the inner peripheral surface 94si and the outer peripheral surface 94so of the exhaust guide 94 are positioned on the central axis CL of the light source cover 92.

[0114] The diameter of part or all of the inner circumferential surface 94si of the exhaust guide 94 may change stepwise or continuously as the diameter approaches the lower end of the inner circumferential surface 94si of the exhaust guide 94. The horizontal cross section of the inner circumferential surface 94si of the exhaust guide 94 may have a shape other than a circle. The same applies to the diameter and cross section of the outer circumferential surface 94so of the exhaust guide 94. The outer circumferential surface 94so of the exhaust guide 94 may be eccentric with respect to the inner circumferential surface 94si of the exhaust guide 94, or may have a shape that is not similar to that of the inner circumferential surface 94si of the exhaust guide 94.

[0115] An inner peripheral surface 94si of the exhaust guide 94 surrounds an outer peripheral surface 92so of the light source cover 92. The inner peripheral surface 94si of the exhaust guide 94 is separated from the outer peripheral surface 92so of the light source cover 92 at any position. Part or all of the inner peripheral surface 94si of the exhaust guide 94 may be in contact with the outer peripheral surface 92so of the light source cover 92.

[0116] The distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 in the radial direction Dr of the light source cover 92 may be equal to or different from the thickness of the exhaust guide 94, i.e., the distance in the radial direction Dr of the light source cover 92 from the inner peripheral surface 94si of the exhaust guide 94 to the outer peripheral surface 94so of the exhaust guide 94. Fig. 7A shows an example in which the distance between the outer peripheral surface 92so of the light source cover 92 and the inner peripheral surface 94si of the exhaust guide 94 in the radial direction Dr of the light source cover 92 is smaller than the thickness of the exhaust guide 94.

[0117] Next, the flow path of the exhaust guide 94 that guides the gas will be described.

[0118] As shown in Figure 7A, the exhaust guide 94 includes at least one suction port 95i that sucks in gas discharged from the inner nozzle 93, at least one exhaust port 95o that exhausts gas sucked into the at least one suction port 95i, and an internal flow path 95f that guides gas from the at least one suction port 95i to the at least one exhaust port 95o.

[0119] 7A shows an example in which one suction port 95i and one exhaust port 95o are provided. The suction port 95i opens at the lower surface 94sL of the exhaust guide 94. The exhaust port 95o opens at the end surface of the exhaust tube 94t that protrudes outward from the outer peripheral surface 94so of the exhaust guide 94. The suction port 95i is continuous around the entire circumference of the light source cover 92. The suction port 95i is an endless suction port that surrounds the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92.

[0120] 7A shows an example in which the suction port 95i is disposed at the same height as the lower surface 92sL of the light source cover 92, and the suction port 95i vertically draws in gas upward. As long as the suction port 95i can draw in gas discharged from the inner nozzle 93, the suction port 95i may be disposed above or below the lower surface 92sL of the light source cover 92. The direction in which the suction port 95i draws in gas is not limited to the vertical direction, and may be a direction extending diagonally upward or diagonally downward away from the central axis CL of the light source cover 92, or may be a horizontal direction away from the central axis CL of the light source cover 92.

[0121] 7A shows an example in which the internal flow path 95f includes multiple layers stacked in a direction parallel to the central axis CL of the light source cover 92. In this example, five layers are provided in the internal flow path 95f. The five layers, namely, the first layer, the second layer, the third layer, the fourth layer, and the fifth layer, are arranged vertically in this order from top to bottom. Gas drawn into the exhaust guide 94 through the suction port 95i of the exhaust guide 94 passes through the fifth layer, the fourth layer, the third layer, the second layer, and the first layer in this order and is discharged to the outside of the exhaust guide 94 through the exhaust port 95o of the exhaust guide 94.

[0122] 7B , the first layer closest to the exhaust port 95o among the multiple layers is a first cylindrical flow path 95ta that surrounds the central axis CL of the light source cover 92. The second layer second closest to the exhaust port 95o includes a plurality of first linear flow paths 95La that are spaced apart in the circumferential direction Dc of the light source cover 92. The third layer third closest to the exhaust port 95o among the multiple layers is a second cylindrical flow path 95tb that surrounds the central axis CL of the light source cover 92. The fourth layer fourth closest to the exhaust port 95o includes a plurality of second linear flow paths 95Lb that are spaced apart in the circumferential direction Dc of the light source cover 92. The fifth layer farthest from the exhaust port 95o among the multiple layers is a third cylindrical flow path 95tc that surrounds the central axis CL of the light source cover 92.

[0123] The first cylindrical flow path 95ta is continuous around the entire circumference of the light source cover 92. As long as all of the first linear flow paths 95La are connected to the first cylindrical flow path 95ta, the first cylindrical flow path 95ta may have opposite ends that are spaced apart in the circumferential direction Dc of the light source cover 92. The same applies to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. In the case of the third cylindrical flow path 95tc, as long as all of the second linear flow paths 95Lb are connected to the third cylindrical flow path 95tc, the third cylindrical flow path 95tc may be continuous around the entire circumference of the light source cover 92 or may have opposite ends that are spaced apart in the circumferential direction Dc of the light source cover 92.

[0124] In the example shown in Figure 7B, the lower end (upstream end) of the third cylindrical flow path 95tc corresponds to the suction port 95i. Each second linear flow path 95Lb extends vertically from the upper end of the third cylindrical flow path 95tc to the lower end of the second cylindrical flow path 95tb. Each first linear flow path 95La extends vertically from the upper end of the second cylindrical flow path 95tb to the lower end of the first cylindrical flow path 95ta. The first cylindrical flow path 95ta is connected to the discharge port 95o via a downstream flow path 95d, which will be described later.

[0125] FIG. 7A illustrates an example in which the first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are each vertically cylindrical. The first cylindrical flow path 95ta, the second cylindrical flow path 95tb, and the third cylindrical flow path 95tc are arranged on a vertical cylindrical surface (along the two-dot chain line shown in FIG. 7A ) whose central axis coincides with the central axis CL of the light source cover 92. The thickness of the first cylindrical flow path 95ta, i.e., the distance from the inner circumferential surface of the first cylindrical flow path 95ta to the outer circumferential surface of the first cylindrical flow path 95ta in the radial direction Dr of the light source cover 92, is constant at all positions. The same applies to the second cylindrical flow path 95tb and the third cylindrical flow path 95tc. The inner diameter of the first cylindrical flow path 95ta is equal to the inner diameter of the second cylindrical flow path 95tb and the inner diameter of the third cylindrical flow path 95tc. The outer diameter of the first cylindrical flow path 95ta is equal to the outer diameter of the second cylindrical flow path 95tb and equal to the outer diameter of the third cylindrical flow path 95tc.

[0126] The multiple first linear flow paths 95La extend vertically on a vertical cylindrical surface (along the two-dot chain line shown in FIG. 7A ) whose central axis coincides with the central axis CL of the light source cover 92. The multiple second linear flow paths 95Lb also extend vertically on this cylindrical surface. The distance from the central axis CL of the light source cover 92 to the first linear flow paths 95La in the radial direction Dr of the light source cover 92 is equal to the distance from the central axis CL of the light source cover 92 to the second linear flow paths 95Lb in the radial direction Dr of the light source cover 92. The distance from the central axis CL of the light source cover 92 to the first linear flow paths 95La in the radial direction Dr of the light source cover 92 is equal to the distance from the central axis CL of the light source cover 92 to the first cylindrical flow path 95ta in the radial direction Dr of the light source cover 92. The same applies to the distances to the second cylindrical flow paths 95tb and the third cylindrical flow paths 95tc.

[0127] As shown in FIG. 7B , the upper ends of the first linear flow paths 95La are arranged at the same height. The lower ends of the first linear flow paths 95La are arranged at the same height. The same applies to the upper and lower ends of the second linear flow paths 95Lb. The height (vertical length; the same applies below) of the first linear flow paths 95La may be equal to or different from the height (vertical length; the same applies below) of the second linear flow paths 95Lb. The height of the first linear flow paths 95La may be equal to or different from the height of at least one of the first cylindrical flow paths 95ta, the second cylindrical flow paths 95tb, and the third cylindrical flow paths 95tc. The same applies to the height of the second linear flow paths 95Lb.

[0128] 7B illustrates an example in which the height of the first linear flow passage 95La is equal to the height of the first cylindrical flow passage 95ta and the third cylindrical flow passage 95tc and greater than the height of the second linear flow passage 95Lb and the second cylindrical flow passage 95tb. In this example, each first linear flow passage 95La is vertical from the first cylindrical flow passage 95ta to the second cylindrical flow passage 95tb, and each second linear flow passage 95Lb is vertical from the second cylindrical flow passage 95tb to the third cylindrical flow passage 95tc. At least one of the multiple first linear flow passages 95La may be inclined with respect to a vertical plane. The same applies to the multiple second linear flow passages 95Lb. For example, the first linear flow passage 95La may be inclined in at least one of the radial direction Dr and the circumferential direction of the light source cover 92.

[0129] As shown in FIG. 7B , the multiple first linear flow paths 95La are arranged at equal intervals in the circumferential direction Dc of the light source cover 92. The multiple second linear flow paths 95Lb are also arranged at equal intervals in the circumferential direction Dc of the light source cover 92. The number of first linear flow paths 95La may be equal to or different from the number of second linear flow paths 95Lb. The pitch of the first linear flow paths 95La represents the shortest distance between the central axes of the two first linear flow paths 95La that are closest to the circumferential direction Dc of the light source cover 92. The same applies to the pitch of the second linear flow paths 95Lb. The pitch of the first linear flow paths 95La may be equal to or different from the pitch of the second linear flow paths 95Lb.

[0130] The pitch of the first linear flow channels 95La is larger than the diameter of the first linear flow channels 95La. The pitch of the second linear flow channels 95Lb is larger than the diameter of the second linear flow channels 95Lb. The diameter of the first linear flow channels 95La may be equal to or different from the diameter of the second linear flow channels 95Lb. The pitch of the first linear flow channels 95La may be equal to or different from the height of the first linear flow channels 95La. The same applies to the pitch of the second linear flow channels 95Lb. FIG. 7B shows an example in which the pitch of the first linear flow channels 95La is shorter than the height of the first linear flow channels 95La and the pitch of the second linear flow channels 95Lb is shorter than the height of the second linear flow channels 95Lb.

[0131] 7B illustrates an example in which, when viewed in the axial direction Da of the light source cover 92, which is a direction parallel to the central axis CL of the light source cover 92, at least one of the multiple first linear flow paths 95La does not overlap with any of the second linear flow paths 95Lb. In other words, in this example, even if the multiple first linear flow paths 95La are extended in the axial direction Da of the light source cover 92, at least one of the multiple first linear flow paths 95La does not intersect with any of the second linear flow paths 95Lb. In this example, all of the first linear flow paths 95La do not necessarily overlap with all of the second linear flow paths 95Lb. In FIG. 7B , the two dashed two-dot lines arranged in the second cylindrical flow path 95tb correspond to lines extending the leftmost first linear flow path 95La in the axial direction Da of the light source cover 92.

[0132] The internal flow path 95f of the exhaust guide 94 includes at least one downstream flow path 95d extending from the layer closest to the exhaust port 95o among the multiple layers to at least one exhaust port 95o. In the example shown in FIG. 7A , there is one exhaust port 95o, and therefore there is also one downstream flow path 95d. In this example, the downstream flow path 95d extends from the first cylindrical flow path 95ta to the exhaust port 95o. The downstream flow path 95d is formed by the exhaust tube 94t. The upstream end of the downstream flow path 95d opens at the inner surface of the first cylindrical flow path 95ta. The downstream end of the downstream flow path 95d opens at the end face of the exhaust tube 94t. The downstream end of the downstream flow path 95d corresponds to the exhaust port 95o.

[0133] The downstream flow path 95d extends horizontally from the first cylindrical flow path 95ta to the exhaust port 95o in a direction perpendicular to the central axis CL of the light source cover 92. The central axis of the downstream flow path 95d is horizontal from the upstream end of the downstream flow path 95d to the downstream end of the downstream flow path 95d. The central axis of the downstream flow path 95d may be inclined with respect to a horizontal plane. The central axis of the downstream flow path 95d may be a straight line or a curve extending from the upstream end of the downstream flow path 95d to the downstream end of the downstream flow path 95d, or may include one or more straight line segments and one or more curved segments. The central axis of the downstream flow path 95d may extend along a tangent to the first cylindrical flow path 95ta, or may be inclined with respect to the tangent and normal to the first cylindrical flow path 95ta.

[0134] The substrate processing apparatus 1 includes an exhaust pipe 95p that transmits the suction force of a suction force generator 95g, such as a pump or an aspirator, to the exhaust guide 94. The exhaust pipe 95p is attached to an exhaust tube 94t. When the suction force generator 95g generates a suction force, gas is sucked into the internal flow path 95f through the suction port 95i and then exhausted through the exhaust port 95o to the exhaust pipe 95p. When the suction force generator 95g generates a suction force while the heater 90 is disposed above the substrate W, an airflow is formed that flows radially toward the suction port 95i between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. This airflow is sucked into the suction force generator 95g through the suction port 95i, the internal flow path 95f, and the exhaust port 95o.

[0135] Because the upstream end of the downstream flow path 95d of the exhaust guide 94 is located between the upper and lower ends of the first cylindrical flow path 95ta of the exhaust guide 94, when the suction force generator 95g generates a suction force, an airflow is formed in the first cylindrical flow path 95ta that flows in the circumferential direction Dc of the light source cover 92 toward the exhaust port 95o. As a result, the suction force of the suction force generator 95g is dispersed in the circumferential direction Dc of the light source cover 92 within the first cylindrical flow path 95ta and transmitted from the first cylindrical flow path 95ta to all of the first linear flow paths 95La. Accordingly, the suction force of the suction force generator 95g is transmitted from all of the first linear flow paths 95La to the second cylindrical flow paths 95tb, and then from the second cylindrical flow paths 95tb to all of the second linear flow paths 95Lb. As a result, gas is sucked into the third cylindrical flow path 95tc from the entire circumference of the suction port 95i, and flows from the third cylindrical flow path 95tc to all of the second linear flow paths 95Lb.

[0136] As described above, at least one of the multiple first linear flow paths 95La does not overlap any of the second linear flow paths 95Lb when viewed in the axial direction Da of the light source cover 92. When the first linear flow paths 95La overlap the second linear flow paths 95Lb when viewed in the axial direction Da of the light source cover 92, the suction force that draws in the gas in the first linear flow paths 95La is transmitted to the second linear flow paths 95Lb without being dispersed in the circumferential direction Dc of the light source cover 92 within the second cylindrical flow paths 95tb. In contrast, when the first linear flow paths 95La are offset from the second linear flow paths 95Lb in the circumferential direction Dc of the light source cover 92, the suction force that draws in the gas in the first linear flow paths 95La is dispersed in the circumferential direction Dc of the light source cover 92 within the second cylindrical flow paths 95tb and then transmitted to the second linear flow paths 95Lb. This allows the suction force of the suction force generating device 95g to be distributed in the circumferential direction Dc of the light source cover 92 not only in the first cylindrical flow path 95ta but also in the second cylindrical flow path 95tb, allowing gas to be sucked evenly into the suction port 95i.

[0137] Next, the electrical configuration of the substrate processing apparatus 1 will be described.

[0138] 8 is a block diagram showing the electrical configuration of the substrate processing apparatus 1. The control device 3 includes at least one computer. The computer includes a computer main body 3a and a peripheral device 3d connected to the computer main body 3a. The computer main body 3a includes a CPU 3b (central processing unit) that executes various commands and a memory 3c that stores information. The peripheral device 3d includes a storage 3e that stores information to be transmitted and received between the memory 3c, such as a program P, a reader 3f that reads information from removable media RM, and a communication device 3g that communicates with other devices, such as a host computer.

[0139] The control device 3 is connected to an input device and a display device. The input device is operated when an operator such as a user or a maintenance technician inputs information into the substrate processing apparatus 1. The information is displayed on the screen of the display device. The input device may be any of a keyboard, a pointing device, and a touch panel, or may be other devices. The substrate processing apparatus 1 may be provided with a touch panel display that serves as both an input device and a display device.

[0140] The CPU 3b executes a program P stored in the storage 3e. The program P in the storage 3e may be one that has been pre-installed in the control device 3, one that has been sent from a removable medium RM to the storage 3e via the reader 3f, or one that has been sent from an external device such as a host computer to the storage 3e via the communication device 3g.

[0141] The memory 3c is a volatile memory that retains its memory only when power is supplied. The storage 3e and the removable medium RM are non-volatile memories that retain their memory even when power is not supplied. The storage 3e is, for example, a magnetic storage device such as a hard disk drive. The removable medium RM is, for example, an optical disk such as a compact disk or a semiconductor memory such as a memory card. The removable medium RM is an example of a computer-readable recording medium on which the program P is recorded. The removable medium RM is a non-transitory tangible recording medium.

[0142] The storage 3e stores a plurality of recipes. A recipe is information that defines the processing content, processing conditions, and processing procedure of a substrate W. The plurality of recipes differ from one another in at least one of the processing content, processing conditions, and processing procedure of a substrate W. The control device 3 controls the substrate processing apparatus 1 so that the substrate W is processed in accordance with the recipe specified by the host computer. The control device 3 is programmed to execute the following steps.

[0143] Next, an example of processing of the substrate W will be described.

[0144] 9 is a process diagram for explaining an example of processing of a substrate W performed by the substrate processing apparatus 1. In the following, reference will be made to FIGS.

[0145] The substrate W to be processed is, for example, a semiconductor wafer such as a silicon wafer. The substrate W may be a substrate W having a pattern P1 (see FIG. 10A ) formed on its surface, or a substrate W having no pattern P1 formed on its surface. In the latter case, the pattern P1 may be formed in a first chemical liquid supplying step or a second chemical liquid supplying step, which will be described later.

[0146] When a substrate W is processed by the substrate processing apparatus 1, a loading step (step S1 in FIG. 9) of loading the substrate W into the chamber 4 is performed.

[0147] Specifically, with the blocking member 51 in the upper position, all guards 24 in the lower position, and all scan nozzles in the standby position, the center robot CR (see FIG. 1A ) supports the substrate W with the hand Hc and causes the hand Hc to enter the chamber 4. The center robot CR then places the substrate W on the hand Hc onto the multiple chuck pins 11 with the front surface of the substrate W facing upward. The multiple chuck pins 11 are then pressed against the edge surface of the substrate W to grip the substrate W. After placing the substrate W on the spin chuck 10, the center robot CR then retracts the hand Hc from the interior of the chamber 4.

[0148] Next, the gas valve 64 and the gas valve 84 are opened, and the central opening 61 of the blocking member 51 and the central opening 81 of the spin base 12 start discharging nitrogen gas. This fills the space between the substrate W and the blocking member 51 with nitrogen gas. Similarly, the space between the substrate W and the spin base 12 is filled with nitrogen gas. Meanwhile, the guard lifting unit 27 lifts at least one guard 24 from the lower position to the upper position. Thereafter, the spin motor 14 is driven, and the substrate W starts to rotate (step S2 in FIG. 9 ).

[0149] Next, a first chemical liquid supplying step (step S3 in FIG. 9) is performed in which DHF, an example of a chemical liquid, is supplied to the upper surface of the substrate W to form a liquid film of DHF covering the entire upper surface of the substrate W.

[0150] Specifically, with blocking member 51 in the upper position and at least one guard 24 in the upper position, first nozzle movement unit 34a moves first chemical liquid nozzle 31a and first rinse liquid nozzle 35a from the standby position to the processing position. Thereafter, first chemical liquid valve 33a is opened, and first chemical liquid nozzle 31a begins to discharge DHF. When a predetermined time has elapsed since first chemical liquid valve 33a was opened, first chemical liquid valve 33a is closed, and the discharge of DHF is stopped.

[0151] The DHF discharged from the first chemical liquid nozzle 31a collides with the upper surface of the substrate W rotating at the first chemical liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. As a result, the DHF is supplied to the entire upper surface of the substrate W, and a liquid film of DHF is formed covering the entire upper surface of the substrate W. While the first chemical liquid nozzle 31a is discharging the DHF, the first nozzle movement unit 34a may move the collision position of the DHF against the upper surface of the substrate W so that the collision position passes through the center and the outer periphery, or may keep the collision position stationary at the center. Whether or not the collision position is moved applies similarly to the processing liquid supplied to the upper surface of the substrate W after the DHF.

[0152] Next, a first rinse liquid supplying step (step S4 in FIG. 9) is performed in which pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W to wash away the DHF on the substrate W.

[0153] Specifically, with the blocking member 51 in the upper position, at least one guard 24 in the upper position, and the first chemical liquid nozzle 31 a and the first rinse liquid nozzle 35 a in the processing position, the first rinse liquid valve 37 a is opened, and the first rinse liquid nozzle 35 a starts to discharge deionized water. Before the discharge of deionized water starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0154] The deionized water discharged from the first rinse liquid nozzle 35a collides with the upper surface of the substrate W, which is rotating at the first rinse liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. DHF on the substrate W is replaced with the deionized water discharged from the first rinse liquid nozzle 35a. This forms a liquid film of deionized water that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the first rinse liquid valve 37a was opened, the first rinse liquid valve 37a is closed, and the discharge of deionized water is stopped. Thereafter, the first nozzle moving unit 34a moves the first chemical liquid nozzle 31a and the first rinse liquid nozzle 35a to their standby positions.

[0155] Next, a second chemical liquid supplying step (step S5 in FIG. 9) is performed in which SC1, an example of a chemical liquid, is supplied to the upper surface of the substrate W to form a liquid film of SC1 that covers the entire upper surface of the substrate W.

[0156] Specifically, with blocking member 51 in the upper position and at least one guard 24 in the upper position, second nozzle moving unit 34b moves second chemical liquid nozzle 31b and second rinse liquid nozzle 35b from the standby position to the processing position. Then, second chemical liquid valve 33b is opened, and second chemical liquid nozzle 31b starts discharging SC1. Before discharging SC1 starts, guard lifting unit 27 may move at least one guard 24 vertically to switch the guard 24 that receives the liquid discharged from substrate W.

[0157] SC1 discharged from second chemical liquid nozzle 31b collides with the upper surface of substrate W rotating at the second chemical liquid supply speed, and then flows outward along the upper surface of substrate W due to centrifugal force. The pure water on substrate W is replaced with SC1 discharged from second chemical liquid nozzle 31b. This forms a liquid film of SC1 that covers the entire upper surface of substrate W. When a predetermined time has elapsed since second chemical liquid valve 33b was opened, second chemical liquid valve 33b is closed, and the discharge of SC1 is stopped.

[0158] Next, a second rinse liquid supplying step (step S6 in FIG. 9) is performed in which pure water, which is an example of a rinse liquid, is supplied to the upper surface of the substrate W to wash away SC1 on the substrate W.

[0159] Specifically, with the blocking member 51 in the upper position, at least one guard 24 in the upper position, and the second chemical liquid nozzle 31 b and the second rinse liquid nozzle 35 b in the processing position, the second rinse liquid valve 37 b is opened, and the second rinse liquid nozzle 35 b starts to discharge deionized water. Before the discharge of deionized water starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0160] The deionized water discharged from the second rinse liquid nozzle 35b collides with the upper surface of the substrate W, which is rotating at the second rinse liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. SC1 on the substrate W is replaced with the deionized water discharged from the second rinse liquid nozzle 35b. This forms a liquid film of deionized water that covers the entire upper surface of the substrate W. When a predetermined time has elapsed since the second rinse liquid valve 37b was opened, the second rinse liquid valve 37b is closed, and the discharge of deionized water is stopped. Thereafter, the second nozzle moving unit 34b moves the second chemical liquid nozzle 31b and the second rinse liquid nozzle 35b to their standby positions.

[0161] Next, a substitute liquid supplying step (step S7 in FIG. 9) is performed in which IPA, which is an example of a substitute liquid, is supplied to the upper surface of the substrate W to replace the pure water on the substrate W with IPA.

[0162] Specifically, with at least one guard 24 in the upper position, the blocking member lifting unit 54 lowers the blocking member 51 from the upper position to the lower position. In this state, the replacement liquid valve 45 is opened, and the center nozzle 55 starts to discharge IPA. Before the discharge of IPA starts, the guard lifting unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0163] The IPA discharged from the central nozzle 55 collides with the upper surface of the substrate W, which is rotating at the substitution liquid supply speed, and then flows outward along the upper surface of the substrate W due to centrifugal force. The pure water on the substrate W is replaced with the IPA discharged from the central nozzle 55. As a result, a liquid film of IPA is formed covering the entire upper surface of the substrate W. When a predetermined time has elapsed since the substitution liquid valve 45 was opened, the substitution liquid valve 45 is closed, and the discharge of IPA is stopped. After the liquid film of IPA covering the entire upper surface of the substrate W is formed, the substrate W may be rotated at a paddle speed (for example, a speed greater than 0 rpm but not greater than 20 rpm) while the discharge of IPA from the central nozzle 55 is stopped.

[0164] Next, a sublimable substance-containing liquid supplying step (step S8 in FIG. 9) is performed in which the sublimable substance-containing liquid is supplied to the upper surface of the substrate W to form a liquid film of the sublimable substance-containing liquid covering the entire upper surface of the substrate W.

[0165] Specifically, with the blocking member 51 in the lower position and at least one guard 24 in the upper position, the sublimable substance-containing liquid valve 41 is opened and the central nozzle 55 starts to discharge the sublimable substance-containing liquid. Before the discharge of the sublimable substance-containing liquid starts, the guard lifting / lowering unit 27 may vertically move at least one guard 24 to switch the guard 24 that receives the liquid discharged from the substrate W.

[0166] The sublimable substance-containing liquid discharged from the central nozzle 55 collides with the upper surface of the substrate W rotating at the sublimable substance supply speed, and then flows outward along the upper surface of the substrate W by centrifugal force. The IPA on the substrate W is replaced with the sublimable substance-containing liquid discharged from the central nozzle 55. This forms a liquid film of the sublimable substance-containing liquid covering the entire upper surface of the substrate W. When a predetermined time has elapsed since the sublimable substance-containing liquid valve 41 was opened, the sublimable substance-containing liquid valve 41 is closed, and the discharge of the sublimable substance-containing liquid is stopped.

[0167] Next, a film thickness reduction process (step S9 in FIG. 9) is performed in which a portion of the sublimable substance-containing liquid on the substrate W is removed, thereby reducing the film thickness (thickness of the liquid film) of the sublimable substance-containing liquid on the substrate W while maintaining the entire upper surface of the substrate W covered with a liquid film of the sublimable substance-containing liquid.

[0168] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the film thickness reduction speed. The film thickness reduction speed may be equal to or different from the sublimable substance supply speed. The sublimable substance-containing liquid on the substrate W is discharged outward from the substrate W by centrifugal force even after the discharge of the sublimable substance-containing liquid has stopped. Therefore, the thickness of the liquid film of the sublimable substance-containing liquid on the substrate W decreases. When a certain amount of the sublimable substance-containing liquid on the substrate W has been discharged, the amount of the sublimable substance-containing liquid discharged from the substrate W per unit time decreases to zero or approximately zero. As a result, the thickness of the liquid film of the sublimable substance-containing liquid on the substrate W stabilizes at a value corresponding to the rotation speed of the substrate W.

[0169] Next, a solidified film forming process (step S10 in FIG. 9) is performed in which the solvent is evaporated from the sublimable substance-containing liquid on the substrate W to form a solidified film SF (see FIG. 10B) containing the sublimable substance on the substrate W.

[0170] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the solidified film formation speed. The solidified film formation speed may be equal to or different from the sublimable material supply speed. Furthermore, the gas valve 57 is opened to start discharging nitrogen gas from the central nozzle 55. In addition to or instead of opening the gas valve 57, the opening of the flow rate adjustment valve 65 may be changed to increase the flow rate of nitrogen gas discharged from the central opening 61 of the blocking member 51.

[0171] When the rotation of the substrate W at the solidified film formation speed is started, the evaporation of the sublimable substance-containing liquid is promoted, and a part of the sublimable substance-containing liquid on the substrate W evaporates. Since the vapor pressure of the solvent is higher than the vapor pressure of the sublimable substance corresponding to the solute, the solvent evaporates at an evaporation rate higher than the evaporation rate of the sublimable substance. Therefore, the concentration of the sublimable substance gradually increases, and the film thickness of the sublimable substance-containing liquid gradually decreases. The freezing point of the sublimable substance-containing liquid rises as the concentration of the sublimable substance increases. When the freezing point of the sublimable substance-containing liquid coincides with the temperature of the sublimable substance-containing liquid, the sublimable substance-containing liquid begins to solidify, and a solidified film SF corresponding to a solidified body covering the entire upper surface of the substrate W is formed.

[0172] Next, a sublimation step (step S11 in FIG. 9) is performed in which the solidified film SF on the substrate W is sublimated and removed from the upper surface of the substrate W.

[0173] Specifically, with the blocking member 51 in the lower position, the spin motor 14 maintains the rotation speed of the substrate W at the sublimation speed. The sublimation speed may be equal to or different from the sublimable material supply speed. Furthermore, if the gas valve 57 is closed, the gas valve 57 is opened to start discharging nitrogen gas from the central nozzle 55. In addition to or instead of opening the gas valve 57, the opening of the flow rate adjustment valve 65 may be changed to increase the flow rate of nitrogen gas discharged from the central opening 61 of the blocking member 51.

[0174] When the rotation of the substrate W at the sublimation speed or the like is started, sublimation of the solidified film SF on the substrate W begins, and a gas containing a sublimable substance is generated from the solidified film SF on the substrate W. The gas (gas containing a sublimable substance) generated from the solidified film SF flows radially in the space between the substrate W and the blocking member 51 and is exhausted from above the substrate W. After a certain amount of time has passed since the start of sublimation, all of the solidified film SF is removed from the substrate W.

[0175] Next, an organic substance removal step (step S12 in FIG. 9) is performed to remove organic substances remaining on the substrate W after the solidified film SF has been removed from the substrate W.

[0176] Specifically, the heater moving unit 96 moves the heater 90, the inner nozzle 93, and the exhaust guide 94 from the standby position to the processing position. Then, the oxidizing gas valve 93vo is opened, and the inner nozzle 93 starts to discharge the oxidizing gas. Furthermore, the light source 91 starts emitting light, and the suction force generator 95g starts generating suction force. The light source 91 may start emitting light simultaneously with the inner nozzle 93 starting to discharge the oxidizing gas, or it may start emitting light before or after the inner nozzle 93 starts to discharge the oxidizing gas. The same applies to the timing at which the suction force generator 95g starts generating suction force. The timing at which the light source 91 starts emitting light may be the same as or different from the timing at which the suction force generator 95g starts to generate suction force.

[0177] The oxidizing gas discharged from the inner nozzle 93 flows radially from the central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The oxidizing gas is then sucked into the suction port 95i of the exhaust guide 94. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by light from the light source 91. The heater moving unit 96 moves the heater 90 and the like horizontally while the spin motor 14 rotates the substrate W at the organic matter removal speed. This allows the oxidizing gas to be supplied to the entire upper surface of the substrate W, and organic matter is removed from the entire upper surface of the substrate W.

[0178] When a predetermined time has elapsed since the oxidizing gas valve 93vo was opened, the oxidizing gas valve 93vo is closed, and the inner nozzle 93 stops discharging the oxidizing gas. At the same time as, before, or after the oxidizing gas valve 93vo is closed, the inert gas valve 93vi is opened, and the inner nozzle 93 starts discharging the inert gas. The light source 91 may stop emitting light at the same time as the oxidizing gas valve 93vo is closed, or may stop emitting light before or after the oxidizing gas valve 93vo is closed. The light source 91 may stop emitting light after the inner nozzle 93 starts discharging the inert gas.

[0179] The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is pushed outward by the inert gas discharged from the inner nozzle 93, and is also sucked into the suction port 95i of the exhaust guide 94. This causes the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W to be filled with inert gas. When a predetermined time has elapsed since the inert gas valve 93vi was opened, the inert gas valve 93vi is closed, and the inner nozzle 93 stops discharging the inert gas.

[0180] After the discharge of the inert gas is stopped, the spin motor 14 is stopped and the rotation of the substrate W is stopped (step S13 in FIG. 9 ). Simultaneously with, before, or after the rotation of the substrate W is stopped, the heater moving unit 96 moves the heater 90, inner nozzle 93, and exhaust guide 94 from the processing position to the standby position while the light source 91 is stopped emitting light. The suction force generator 95g may stop generating the suction force simultaneously with the discharge of the inert gas being stopped, or may stop generating the suction force before or after the discharge of the inert gas is stopped.

[0181] Next, an unloading step (step S14 in FIG. 9) is performed to unload the substrate W from the chamber 4.

[0182] Specifically, the blocking member lifting unit 54 lifts the blocking member 51 to the upper position, and the guard lifting unit 27 lowers all of the guards 24 to the lower position. Furthermore, the gas valve 64 and the gas valve 84 are closed, and the central opening 61 of the blocking member 51 and the central opening 81 of the spin base 12 stop discharging nitrogen gas. The center robot CR then moves the hand Hc into the chamber 4. After the chuck pins 11 release their grip on the substrate W, the center robot CR supports the substrate W on the spin chuck 10 with the hand Hc. The center robot CR then retracts the hand Hc from the inside of the chamber 4 while still supporting the substrate W with the hand Hc. This causes the processed substrate W to be removed from the chamber 4.

[0183] Next, the organic matter removal step will be described in more detail.

[0184] Figures 10A to 10E are schematic cross-sectional views of a substrate W. Figure 11 is a schematic view showing a state in which an oxidizing gas is being discharged from an inner nozzle 93 while the oxidizing gas is being sucked into an exhaust guide 94. Figure 12 is a schematic view showing a state in which, after the oxidizing gas has been supplied to the substrate W, an inert gas is being discharged from the inner nozzle 93 while the inert gas is being sucked into an exhaust guide 94. In Figures 11 and 12, multiple straight lines extending downward from the light source 91 represent light emitted by the light source 91.

[0185] 10A and 10B, in the solidified film forming step (step S10 in FIG. 9), the sublimable substance-containing liquid on the substrate W is transformed into a solidified film SF. As shown in FIG. 10B and 10C, in the sublimation step (step S11 in FIG. 9), the solidified film SF is removed from the substrate W by sublimation of the solidified film SF.

[0186] As shown in Fig. 10C , organic matter may remain on the substrate W after the solidified film SF is removed from the substrate W. The black circles in Fig. 10C and Fig. 10D represent organic matter. The circles in Fig. 10C and Fig. 10D merely show an image of the organic matter, and the actual shapes of the organic matter may not necessarily match the shapes of the organic matter shown in Fig. 10C and Fig. 10D .

[0187] The organic matter remaining after removing the solidified film SF is a substance generated from the solidified film SF. The organic matter may be a sublimable substance that has not sublimated, or a substance resulting from a change in the quality of a sublimable substance. The organic matter may be a substance derived from a sublimable substance, or a substance unrelated to a sublimable substance. The organic matter may be a substance that has sublimability, or a substance that does not have sublimability.

[0188] Fig. 10E shows the substrate W after removal of residues such as organic substances. In the organic substance removal step (step S12 in Fig. 9), the organic substances described above are removed from the substrate W, thereby changing the state of the substrate W from that shown in Fig. 10D to that shown in Fig. 10E.

[0189] Specifically, in the organic substance removal step (step S12 in FIG. 9 ), as shown in FIG. 11 , the heater moving unit 96 positions the heater 90, the inner nozzle 93, and the exhaust guide 94 above the substrate W. This causes the lower surface 92sL of the light source cover 92 to directly face the upper surface of the substrate W in the vertical direction. At this time, the lower surface 92sL of the light source cover 92 is close to the upper surface of the substrate W to a distance that prevents a scan nozzle such as the first chemical solution nozzle 31a from entering between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The vertical distance from the lower surface 92sL of the light source cover 92 to the upper surface of the substrate W may be equal to or greater than the radius of the lower surface 92sL of the light source cover 92, or may be less than the radius of the lower surface 92sL of the light source cover 92.

[0190] The inner nozzle 93 discharges oxidizing gas with the lower surface 92sL of the light source cover 92 facing the upper surface of the substrate W. The oxidizing gas discharged from the inner nozzle 93 flows radially from the central opening 92op of the light source cover 92 between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W. The oxidizing gas is then sucked into the suction port 95i of the exhaust guide 94. The flow rate of the gas sucked into the suction port 95i is defined as the exhaust flow rate, and the flow rate of the gas discharged from the inner nozzle 93 is defined as the supply flow rate. The exhaust flow rate and the supply flow rate are set so that the exhaust flow rate exceeds the supply flow rate. Therefore, the oxidizing gas can be brought into contact with the upper surface of the substrate W while being prevented from diffusing outside the suction port 95i.

[0191] The oxidizing gas discharged from the inner nozzle 93 comes into contact with the coated region of the substrate W, that is, the region of the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view. The organic matter in the coated region is oxidized by the oxidizing gas and converted into gas. The vaporized organic matter flows toward the suction port 95i together with the oxidizing gas and is sucked into the suction port 95i. This makes it possible to remove the organic matter from the coated region while preventing the organic matter from adhering to the substrate W again. In addition, because the suction port 95i is located near the position where the organic matter is vaporized, the vaporized organic matter can be quickly removed from the substrate W.

[0192] The light source 91 emits light when the space between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is filled with oxidizing gas. As a result, the covered area of ​​the substrate W (the area of ​​the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view) is heated by the light from the light source 91. The light source cover 92 is also heated by the light from the light source 91. The oxidizing gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W is heated by the light from the light source 91, and is also heated by the substrate W and the light source cover 92. Furthermore, the oxidizing gas is heated by a gas heater 93h before being supplied to the inner nozzle 93.

[0193] The temperature of the light source 91 when heating the substrate W and the oxidizing gas is 200 to 300°C. The temperature of the light source 91 may be higher than 300°C. The temperature of the light source 91 may be lower than 200°C as long as it is higher than room temperature. The gas heater 93h heats the oxidizing gas to a temperature higher than room temperature. The temperature of the gas heater 93h when heating the oxidizing gas may be equal to or different from the temperature of the light source 91.

[0194] As the temperature of the oxidizing gas increases, the activity of the oxidizing gas also increases. This can promote the reaction between the oxidizing gas and the organic matter, allowing the organic matter remaining in the coating region to be removed efficiently and effectively. In other words, it is possible to increase the amount of organic matter vaporized by the oxidizing gas and shorten the time it takes for the organic matter to vaporize. Furthermore, even if a sublimable substance remains on the substrate W, this sublimable substance is heated and sublimated by the light source 91. The vaporized sublimable substance is sucked into the suction port 95i of the exhaust guide 94. Therefore, residues other than organic matter can also be removed from the dried substrate W.

[0195] In the organic substance removal step (step S12 in FIG. 9 ), the control device 3 causes the spin chuck 10 (see FIG. 2 ) to rotate the substrate W and causes the heater moving unit 96 to horizontally move the heater 90 and other components, while discharging the oxidizing gas from the inner nozzle 93, causing the light source 91 to emit light, and discharging the gas through the exhaust guide 94, as described above. The rotation of the substrate W and the movement of the heater 90 and other components causes the coated area to pass over the entire upper surface of the substrate W. This allows the oxidizing gas to be supplied over the entire upper surface of the substrate W while limiting the range in which the oxidizing gas diffuses to the area between the light source cover 92 and the substrate W. As a result, organic substances can be removed from the entire upper surface of the substrate W while preventing the oxidizing gas from coming into contact with components other than the heater 90 and other components.

[0196] The control device 3 may move the heater 90 or the like in any manner as long as the coverage region passes over the entire upper surface of the substrate W. For example, the control device 3 may move the heater 90 or the like horizontally between a center processing position where the heater 90 overlaps the center of the substrate W held on the spin chuck 10 in a plan view and an edge processing position where the heater 90 overlaps the outer periphery of the substrate W held on the spin chuck 10 in a plan view (half scan). Alternatively, the control device 3 may move the heater 90 or the like horizontally between two edge processing positions where the heater 90 overlaps the outer periphery of the substrate W held on the spin chuck 10 in a plan view (full scan).

[0197] The speed at which the heater 90 or the like moves horizontally may be constant throughout the entire section in which the heater 90 or the like moves, or may increase or decrease stepwise or continuously as the distance from the rotation axis A1 (see FIG. 2) of the substrate W to the heater 90 or the like increases. In the latter case, the speed at which the heater 90 or the like moves may be changed only in some sections. The rotation speed of the substrate W may be constant regardless of the distance from the rotation axis A1 of the substrate W to the heater 90 or the like, or may increase or decrease stepwise or continuously as the distance from the rotation axis A1 of the substrate W to the heater 90 or the like increases.

[0198] When the rotation speed of the substrate W is constant, as the heater 90 approaches the outer periphery of the substrate W, the movement speed of the covered region of the substrate W (the region of the upper surface of the substrate W that overlaps with the lower surface 92sL of the light source cover 92 in a plan view) relative to the heater 90 increases. Therefore, as the heater 90 approaches the outer periphery of the substrate W, the gas between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W receives a greater force from the substrate W. In order to further reduce the oxidizing gas that reaches the outside of the suction port 95i, the rotation speed of the substrate W may be reduced as the heater 90 approaches the outer periphery of the substrate W.

[0199] As the heater 90 approaches the outer periphery of the substrate W, the heater 90 approaches the upstream end of the exhaust duct 8 (see FIG. 2). Therefore, the exhaust flow rate (the flow rate of gas sucked into the suction port 95i) may be increased as the heater 90 approaches the outer periphery of the substrate W. Additionally or alternatively, the opening of the exhaust valve 9 (see FIG. 2) arranged in the exhaust duct 8 may be decreased as the heater 90 approaches the outer periphery of the substrate W. In this way, the oxidizing gas that reaches the outside of the suction port 95i can be further reduced.

[0200] The speed at which the heater 90 or the like moves horizontally may be equal to or different from the speed at which a scan nozzle such as the first chemical liquid nozzle 31 a (see FIG. 2 ) moves horizontally. The rotation speed of the substrate W in the organic substance removal process (step S12 in FIG. 9 ) may be equal to or different from the rotation speed of the substrate W in processes other than the organic substance removal process (step S12 in FIG. 9 ). If the speed at which the heater 90 or the like moves horizontally, the speed at which the scan nozzle moves horizontally, or the rotation speed of the substrate W changes during one process, the minimum, maximum, or average value of each speed may be compared.

[0201] Next, the effects of this embodiment will be described.

[0202] In this embodiment, an oxidizing gas that oxidizes and vaporizes organic matter is ejected from the inner nozzle 93. The oxidizing gas flows radially between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W from a central opening 92op formed by the inner periphery of the lower surface 92sL of the light source cover 92. Light from the light source 91 is irradiated onto the substrate W through the lower surface 92sL of the light source cover 92. This heats the substrate W. The oxidizing gas between the light source cover 92 and the substrate W is also heated by the light from the light source 91. This allows the heated oxidizing gas to be supplied to the substrate W.

[0203] The oxidizing gas flowing radially from the central opening 92op of the light source cover 92 along the substrate W is sucked into the suction ports 95i of the exhaust guide 94. Organic matter oxidized and vaporized by reaction with the oxidizing gas is also sucked into the suction ports 95i of the exhaust guide 94. The suction ports 95i are endless and surround the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92. Therefore, the oxidizing gas and organic matter are sucked into the exhaust guide 94 around the entire or almost entire circumference of the light source cover 92. This makes it possible to narrow the range in which the oxidizing gas diffuses and to remove vaporized organic matter from the substrate W.

[0204] In this embodiment, the outer peripheral wall 92o of the light source cover 92 surrounds the light source 91, and the exhaust guide 94 surrounds the entire outer peripheral wall 92o without contacting the outer peripheral wall 92o. Light from the light source 91 also heats the outer peripheral wall 92o of the light source cover 92. Because the exhaust guide 94 is spaced apart from the outer peripheral wall 92o, the amount of heat transferred from the light source cover 92 to the exhaust guide 94 can be reduced, and the temperature rise of the exhaust guide 94 can be reduced. This allows the substrate W and oxidizing gas to be heated by the light source 91 while maintaining the exhaust guide 94 at or below its heat resistance temperature (the maximum temperature at which deformation and deterioration do not occur).

[0205] In this embodiment, the support arm 96ar supports the top wall 92t of the light source cover 92, which protrudes inward from the outer peripheral wall 92o of the light source cover 92. Furthermore, the support arm 96ar supports the flange 94f of the exhaust guide 94, which protrudes outward from the exhaust ring 94r of the exhaust guide 94. Although at least a portion of the flange 94f is positioned at the same height as the top wall 92t, the flange 94f and the top wall 92t protrude on opposite sides of the exhaust ring 94r and the outer peripheral wall 92o. Therefore, even when the exhaust ring 94r is brought closer to the outer peripheral wall 92o of the light source cover 92, the flange 94f does not come into contact with the top wall 92t. Therefore, compared to when the top wall 92t of the light source cover 92 protrudes outward from the outer peripheral wall 92o of the light source cover 92, the exhaust guide 94 can be brought closer to the light source cover 92, allowing for a more compact exhaust guide 94. The smaller size of the exhaust guide 94 further narrows the range over which oxidizing gas diffuses.

[0206] In this embodiment, gas sucked into the suction port 95i of the exhaust guide 94 is guided through the internal flow path 95f of the exhaust guide 94 to the exhaust port 95o of the exhaust guide 94 and is discharged from the exhaust port 95o to the outside of the exhaust guide 94. The internal flow path 95f of the exhaust guide 94 includes a plurality of second linear flow paths 95Lb, a second cylindrical flow path 95tb, a plurality of first linear flow paths 95La, and a first cylindrical flow path 95ta. The gas sucked into the suction port 95i passes through the plurality of second linear flow paths 95Lb, the second cylindrical flow path 95tb, the plurality of first linear flow paths 95La, and the first cylindrical flow path 95ta, in this order, and is discharged from the exhaust port 95o.

[0207] The multiple first linear flow paths 95La are arranged on a cylindrical surface surrounding the central axis CL of the light source cover 92. The multiple second linear flow paths 95Lb are also arranged on the same cylindrical surface. The first linear flow paths 95La and the second linear flow paths 95Lb are arranged on opposite sides of the second cylindrical flow paths 95tb. When viewed in a direction parallel to the central axis CL of the light source cover 92, at least one of the multiple first linear flow paths 95La does not overlap any of the multiple second linear flow paths 95Lb. Therefore, the suction force that draws gas into the suction port 95i is dispersed in the circumferential direction Dc of the light source cover 92 by the second cylindrical flow path 95tb. This allows gas to be uniformly drawn through the suction port 95i.

[0208] In this embodiment, the oxidizing gas is heated by the gas heater 93h and then supplied to the inner nozzle 93. The inner nozzle 93 discharges the oxidizing gas heated by the gas heater 93h, and the light source 91 heats the oxidizing gas discharged from the inner nozzle 93. This reduces the time it takes for the temperature of the oxidizing gas discharged from the inner nozzle 93 to reach a certain value. Because the oxidizing gas is heated by both the gas heater 93h and the light source 91, the light source 91 can be made smaller without lowering the temperature of the oxidizing gas in contact with the substrate W. Reducing the size of the light source 91 also reduces the size of the exhaust guide 94, further narrowing the range over which the oxidizing gas diffuses.

[0209] In this embodiment, at least one of an oxidizing gas and an inert gas is discharged from the inner nozzle 93. The oxidizing gas is a gas containing an oxidizing substance that oxidizes organic matter. If a mixed gas of the oxidizing gas and the inert gas is discharged from the inner nozzle 93, the concentration of the oxidizing substance in the gas discharged from the inner nozzle 93 can be reduced. If only the oxidizing gas is discharged from the inner nozzle 93, the concentration of the oxidizing substance can be increased. This makes it possible to adjust the concentration of the oxidizing substance in the gas discharged from the inner nozzle 93.

[0210] In this embodiment, oxidizing gas is discharged from the inner nozzle 93. Then, inert gas is discharged from the inner nozzle 93 while the gas is being sucked into the exhaust guide 94. The oxidizing gas between the light source cover 92 and the substrate W is pushed outward by the inert gas discharged from the inner nozzle 93 and is also sucked into the exhaust guide 94. This makes it possible to reliably and quickly remove the oxidizing gas remaining between the light source cover 92 and the substrate W after the discharge of the oxidizing gas has stopped.

[0211] In this embodiment, a sublimable substance-containing liquid containing a sublimable substance is discharged from a central nozzle 55, which is an example of a sublimable substance-containing liquid nozzle, and supplied to the substrate W. The central nozzle 55, which is also an example of a gas nozzle, discharges gas toward the substrate W to which the sublimable substance-containing liquid has been supplied. The spin motor 14 rotates the substrate W to which the sublimable substance-containing liquid has been supplied. When the substrate W rotates, an airflow that flows along the substrate W is formed.

[0212] The evaporation of the solvent contained in the sublimable substance-containing liquid is promoted by the airflow formed by at least one of the central nozzle 55 and the spin motor 14. The temperature of the sublimable substance-containing liquid is lowered by the airflow formed by at least one of the central nozzle 55 and the spin motor 14. The sublimable substance is precipitated by the evaporation of the solvent, and a solidified film SF containing the sublimable substance is formed on the substrate W. Alternatively, the sublimable substance-containing liquid is solidified by the lowering of the temperature of the sublimable substance-containing liquid, and a solidified film SF containing the sublimable substance is formed on the substrate W. The airflow formed by at least one of the central nozzle 55 and the spin motor 14 causes the solidified film SF to sublimate. As a result, the solidified film SF is removed from the substrate W.

[0213] The solidified film SF may contain unnecessary organic matter. After the solidified film SF is removed from the substrate W, the unnecessary organic matter may remain on the substrate W. In such cases, if the light source 91 is made to emit light while the inner nozzle 93 is made to discharge an oxidizing gas at least during or after the removal of the solidified film SF, the organic matter can be oxidized and vaporized. In addition, if the vaporized organic matter is sucked into the exhaust guide 94, the range in which the oxidizing gas diffuses can be narrowed and the vaporized organic matter can be removed from the substrate W.

[0214] In this embodiment, the solidified film SF containing a sublimable substance is removed from the substrate W. Thereafter, the control device 3 causes the inner nozzle 93 to start discharging the oxidizing gas. The oxidizing gas discharged from the inner nozzle 93 reacts with unnecessary organic matter remaining on the substrate W after the solidified film SF has been removed, vaporizing the organic matter. Because the inner nozzle 93 starts discharging the oxidizing gas after the solidified film SF has been removed, control of the substrate processing apparatus 1 can be simplified compared to when the inner nozzle 93 starts discharging the oxidizing gas while the solidified film SF is being removed (while the solidified film SF remains on the substrate W).

[0215] Next, another embodiment will be described.

[0216] The supply of the oxidizing gas to the substrate W may be started while the solidified film SF is being removed (while the solidified film SF remains on the substrate W), or may be started after the solidified film SF is formed and before the start of removal of the solidified film SF. In this case, in order to ensure a space for arranging the heater 90 or the like between the blocking member 51 and the substrate W, the sublimation step (step S11 in FIG. 9 ) may be performed with the blocking member 51 in the upper position.

[0217] It is also possible to omit the inert gas pipe 93pi that guides the inert gas to the inner nozzle 93. In addition to or instead of this, the inert gas discharged from a nozzle other than the inner nozzle 93 may be supplied between the lower surface 92sL of the light source cover 92 and the upper surface of the substrate W.

[0218] The sublimable substance-containing liquid may be ejected from a nozzle other than the central nozzle 55. Similarly, the substitute liquid may be ejected from a nozzle other than the central nozzle 55. The nozzle that ejects the sublimable substance-containing liquid may be a scan nozzle or a fixed nozzle. The same applies to the nozzle that ejects the substitute liquid. The nozzle that ejects the sublimable substance-containing liquid may be a nozzle different from the nozzle that ejects the substitute liquid.

[0219] When the solidified film forming step (step S10 in FIG. 9 ) is performed, in addition to or instead of the outlet of the central nozzle 55 and the central opening 61 of the blocking member 51, an inert gas such as nitrogen gas may be discharged toward the upper surface of the substrate W from an outlet other than the outlet of the central nozzle 55 and the central opening 61 of the blocking member 51. The same applies when the sublimation step (step S11 in FIG. 9 ) is performed.

[0220] For example, an inert gas may be ejected from a scan nozzle toward the upper surface of the substrate W. In this case, the collision position where the inert gas ejected from the scan nozzle first collides with the upper surface of the substrate W may be fixed at the center of the substrate W, or the collision position may be movable. The central nozzle 55 is an example of a gas nozzle. The central opening 61 of the blocking member 51 is another example of a gas nozzle.

[0221] When the suction port 95i is an endless suction port, the third cylindrical flow path 95tc and the second linear flow path 95Lb may be omitted from the internal flow path 95f of the exhaust guide 94. In this case, the lower end (upstream end) of the second cylindrical flow path 95tb corresponds to the endless suction port.

[0222] The suction port 95i may be a plurality of divided suction ports arranged in a ring shape so as to surround the central axis CL of the light source cover 92 outside the central opening 92op of the light source cover 92. For example, the third cylindrical flow path 95tc (see FIG. 7B ) may be omitted from the exhaust guide 94. In this case, the lower end (upstream end) of the second linear flow path 95Lb corresponds to the divided suction port.

[0223] The divided suction ports may be circular or arc-shaped extending in the circumferential direction Dc of the light source cover 92. The divided suction ports may include both circular and arc-shaped divided suction ports. In either case, the oxidizing gas and organic matter are sucked into the exhaust guide 94 around the entire or nearly entire circumference of the light source cover 92.

[0224] When the suction port 95i is a plurality of divided suction ports, the exhaust guide 94 may include, instead of the exhaust ring 94r, the flange 94f, and the exhaust tube 94t, a plurality of exhaust nozzles spaced apart in the circumferential direction Dc of the light source cover 92. In this case, one or more divided suction ports are provided for each exhaust nozzle. The suction force of the suction force generator 95g may be transmitted to all or a plurality of exhaust nozzles, or one suction force generator 95g may be provided for each exhaust nozzle.

[0225] The light source cover 92 may be sized so that, in a plan view, the light source cover 92 overlaps the entire substrate W. In this case, when removing organic matter from the substrate W, it is not necessary to move the heater 90 and the like horizontally relative to the substrate W.

[0226] The top wall 92t of the light source cover 92 may protrude outward from the outer peripheral wall 92o of the light source cover 92. Additionally or alternatively, the flange 94f of the exhaust guide 94 may protrude inward from the exhaust ring 94r of the exhaust guide 94. If the light source cover 92 can be supported by the support arm 96ar, the top wall 92t of the light source cover 92 may be omitted. Similarly, if the exhaust guide 94 can be supported by the support arm 96ar, the flange 94f of the exhaust guide 94 may be omitted.

[0227] While the oxidizing gas is being supplied to the substrate W, the substrate W held on the spin chuck 10 may be heated from the side opposite to the light source 91. For example, a heating fluid having a temperature higher than room temperature may be ejected toward the lower surface of the substrate W, or a heater may be disposed below the substrate W. In the former case, the heating fluid may be ejected from the ejection port of the lower surface nozzle 71 or the central opening 81 of the spin base 12. In the latter case, the heater may be disposed between the upper surface 12u of the spin base 12 and the lower surface of the substrate W, or the heater may be disposed inside the spin base 12.

[0228] The organic matter may be removed from the lower surface of the substrate W instead of the upper surface of the substrate W. Alternatively, the organic matter may be removed from both the upper and lower surfaces of the substrate W. When removing the organic matter from the lower surface of the substrate W, a heater 90 or the like may be disposed below the substrate W.

[0229] Organic matter generated when a processing liquid other than the sublimable substance-containing liquid is supplied may be removed from the substrate W. Organic matter may be removed from the substrate W in a chamber different from the chamber that supplies the processing liquid to the substrate W. In other words, organic matter may be removed from a substrate W held by a substrate holder different from the substrate holder that holds the substrate W when the processing liquid is being supplied to the substrate W.

[0230] The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, but may be an apparatus for processing a polygonal substrate W.

[0231] Any two or more of the above-described features may be combined. Any two or more of the above-described steps may be combined.

[0232] Although the embodiments of the present invention have been described in detail, these are merely examples used to clarify the technical contents of the present invention, and the present invention should not be construed as being limited to these examples. The spirit and scope of the present invention are limited only by the appended claims.

Claims

1. A substrate processing apparatus comprising: a substrate holder for holding a substrate; a light source cover including: an opposing surface facing the substrate held by the substrate holder; and a central opening formed by the inner periphery of the opposing surface surrounding a central axis passing through the center of the substrate; an inner nozzle for discharging an oxidizing gas which oxidizes and vaporizes organic matter toward the substrate held by the substrate holder, thereby forming a flow of the oxidizing gas flowing radially from the central opening between the opposing surface and the substrate; a light source for heating the substrate and the oxidizing gas by irradiating the substrate held by the substrate holder with light through the opposing surface; and an exhaust guide including an endless suction port surrounding the central axis outside the central opening, or a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening, and for sucking in gas flowing radially from the central opening along the substrate through the endless suction port or the plurality of divided suction ports.

2. The substrate processing apparatus according to claim 1, wherein the light source cover further includes an outer peripheral wall surrounding the light source, and the exhaust guide surrounds the entire periphery of the outer peripheral wall without contacting the outer peripheral wall.

3. The substrate processing apparatus of claim 2, wherein the light source cover further includes a top wall protruding inward from the outer peripheral wall, the exhaust guide includes an exhaust ring surrounding the entire circumference of the outer peripheral wall without contacting the outer peripheral wall, and a flange protruding outward from the exhaust ring, and the substrate processing apparatus further includes a support arm supporting the top wall and the flange, and at least a portion of the flange is positioned below an upper end of the top wall and above a lower end of the top wall.

4. The substrate processing apparatus of any one of claims 1 to 3, wherein the exhaust guide further includes an exhaust port opening on a surface of the exhaust guide, and an internal flow path that guides gas from the endless suction port or the multiple divided suction ports to the exhaust port, and the internal flow path includes a first cylindrical flow path that surrounds the central axis on a cylindrical surface surrounding the central axis, a second cylindrical flow path that surrounds the central axis on the cylindrical surface, a plurality of first linear flow paths extending from the first cylindrical flow path to the second cylindrical flow path, and a plurality of second linear flow paths that extend from the second cylindrical flow path toward the endless suction port or the multiple divided suction ports on an opposite side to the multiple first linear flow paths, and the multiple first linear flow paths and the multiple second linear flow paths are arranged on the cylindrical surface such that at least one of the multiple first linear flow paths does not overlap any of the multiple second linear flow paths when viewed in a direction parallel to the central axis.

5. The substrate processing apparatus according to claim 1, further comprising a gas heater for heating the oxidizing gas before it is supplied to the inner nozzle.

6. The substrate processing apparatus of any one of claims 1 to 3, further comprising: an oxidizing gas piping for guiding the oxidizing gas to be discharged from the inner nozzle; an inert gas piping for guiding the inert gas to be discharged from the inner nozzle; an oxidizing gas valve that switches between an open state that passes the oxidizing gas flowing through the oxidizing gas piping toward the inner nozzle and a closed state that stops the oxidizing gas flowing through the oxidizing gas piping toward the inner nozzle; and an inert gas valve that switches between an open state that passes the inert gas flowing through the inert gas piping toward the inner nozzle and a closed state that stops the inert gas flowing through the inert gas piping toward the inner nozzle.

7. The substrate processing apparatus of claim 6, further comprising a control device that switches the oxidizing gas valve from the open state to the closed state while causing the exhaust guide to suck in gas, and then switches the inert gas valve from the closed state to the open state while causing the exhaust guide to suck in gas.

8. A substrate processing apparatus according to any one of claims 1 to 3, further comprising: a sublimable substance-containing liquid nozzle that ejects a sublimable substance-containing liquid containing a sublimable substance toward the substrate held by the substrate holder; a gas nozzle that ejects gas toward the substrate held by the substrate holder; and a spin motor that rotates the substrate held by the substrate holder by rotating the substrate holder about a rotation axis passing through a center of the substrate held by the substrate holder.

9. The substrate processing apparatus according to claim 8, further comprising a control device that starts ejecting the oxidizing gas from the inner nozzle after a solidified film containing the sublimable substance contained in the sublimable substance-containing liquid is removed from the substrate.

10. A substrate processing method comprising: an oxidizing gas supply step of discharging an oxidizing gas, which oxidizes and vaporizes organic matter, from an inner nozzle toward a substrate held in a substrate holder, thereby forming a flow of the oxidizing gas flowing radially from a central opening formed by the inner circumference of an opposing surface surrounding a central axis passing through the center of the substrate, between the opposing surface and the substrate; a light emission step of heating the substrate and the oxidizing gas by irradiating the substrate held in the substrate holder with light from a light source via the opposing surface while discharging the oxidizing gas from the inner nozzle; and an exhaust step of guiding the oxidizing gas to an exhaust guide provided with the endless suction port or multiple divided suction ports, by discharging the oxidizing gas from the inner nozzle, so that the oxidizing gas flowing radially from the central opening along the substrate is sucked in by an endless suction port surrounding the central axis outside the central opening, or a plurality of divided suction ports arranged in a ring shape so as to surround the central axis outside the central opening.

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