Perovskite battery and electric device

Abstract

Disclosed in the present application are a perovskite battery and an electric device. The perovskite battery comprises a substrate; a perovskite layer, which is provided on one side of the substrate; a passivation layer, which is provided on at least one side of the perovskite layer, and comprises a passivation material, wherein the passivation material comprises anions and cations, and the volume of the anions is V1, the volume of the cations is V2, and V1>V3>V2, where V3 is the volume of the largest defect in the perovskite layer; and an electrode layer, which is provided on the side of the passivation layer that faces away from the perovskite layer.

Description

Perovskite batteries and electrical equipment Technical Field

[0001] The present application relates to the field of battery technology, and in particular, to perovskite batteries and electrical equipment. Background Art

[0002] Perovskite cells have attracted widespread attention due to their exceptional optoelectronic properties, including adjustable band gaps, high light absorption coefficients, long carrier lifetimes and diffusion lengths, high defect tolerance, and low-cost, low-temperature liquid-phase fabrication methods. In just over a decade, the efficiency of perovskite cells has increased from 3.8% to over 25%, demonstrating tremendous potential. However, perovskite cells are prone to defects during fabrication, and the rapid migration of anions at these defect sites can compromise their long-term stability.

[0003] Summary of the Invention

[0004] In view of the technical problems existing in the background technology, the present application provides a perovskite battery, which aims to hinder the migration of anions in the perovskite layer and improve the long-term stability of the perovskite battery.

[0005] In a first aspect, the present application provides a perovskite battery, comprising a substrate; a perovskite layer, the perovskite layer being disposed on one side of the substrate; a passivation layer, the passivation layer being disposed on at least one side of the perovskite layer, the passivation layer comprising a passivation material, the passivation material comprising anions and cations, the volume of the anions being V1, the volume of the cations being V2, V1>V3>V2, wherein V3 is the volume of the largest defect in the perovskite layer; and an electrode layer, the electrode layer being disposed on a side of the passivation layer facing away from the perovskite layer.

[0006] In the perovskite battery proposed in the present application, when the passivation layer is provided between the perovskite layer and the electrode layer, V1>V2, the smaller cations in the passivation layer are easy to move, and the larger anions in the passivation layer are difficult to move, and a potential barrier is formed between the anions in the passivation layer and the cations in the passivation layer, which can reduce the probability of the anions in the perovskite layer passing through the passivation layer. At the same time, V1>V3, the anions in the passivation layer cannot enter the perovskite layer through the defect sites, which can reduce the risk of the anions in the passivation layer entering the perovskite layer, and form a region with a higher negative charge concentration on the surface of the passivation layer close to the perovskite layer, further reducing the migration of anions on the surface of the perovskite layer toward the electrode layer, thereby reducing the probability of anions on the surface of the perovskite layer and in the perovskite layer migrating to the electrode layer and reacting with the electrode layer, thereby improving the long-term stability of the perovskite battery; V3>V2, the cations can enter the perovskite layer, make up for the defects in the perovskite layer, and further improve the long-term stability of the perovskite battery. When the passivation layer is provided between the perovskite layer and the substrate, the probability of anions in the perovskite layer migrating into the substrate can be reduced, further reducing the probability of perovskite decomposition and improving the long-term stability of the perovskite layer.

[0007] According to some embodiments of the present application, the number of atoms other than hydrogen atoms in one of the anions of the passivation material is 3 to 24, and the number of atoms other than hydrogen atoms in one of the cations of the passivation material is 1 to 5. As a result, the volume of the anions in the passivation layer is larger than the volume of the cations in the passivation layer, and a potential barrier can be formed between the anions in the passivation layer and the cations in the passivation layer to hinder the migration of the anions in the perovskite layer, thereby reducing the probability of the anions in the perovskite layer migrating to the electrode layer and reacting with the electrode layer.

[0008] According to some embodiments of the present application, the anion includes A1-R-A2, wherein A1 includes one or more of hydrogen, halogen, benzene ring, heterocycle or condensed ring, R includes one or more of an alkyl chain of 0-10 carbons, an alkenyl group of 2-10 carbons, and A2 includes one or more of a carboxylate, a sulfonate, a phosphonate or a borate.

[0009] According to some embodiments of the present application, A1 includes one or more of the benzene ring or the heterocycle.

[0010] According to some embodiments of the present application, R includes one or more of an alkyl chain of 2 to 5 carbons or an alkenyl group of 2 to 5 carbons.

[0011] According to some embodiments of the present application, A2 includes one or more of a carboxylate group, a sulfonate group, or a phosphonate group.

[0012] According to some embodiments of the present application, the anions include one or more of N, O, P, or S. Thus, N, O, P, and S can combine with defects on the surface of the perovskite layer to passivate the defects, reduce non-radiative recombination, and improve the stability of the defects.

[0013] According to some embodiments of the present application, the anion includes one or more of a benzene ring or an alkyl group. As a result, the benzene ring and the alkyl group have strong hydrophobicity, which can reduce the risk of water intrusion into the perovskite layer and increase the service life of the perovskite battery.

[0014] According to some embodiments of the present application, the cations include organic cations, Li + 、Na + , K + , Rb + or Cs + Thus, the above cations can enter the perovskite layer and make up for the defects in the perovskite layer.

[0015] According to some embodiments of the present application, the organic cation includes one or more of a methylamine cation, an ethylamine cation, a propylamine cation, a butylamine cation, a pentylamine cation, a hexylamine cation, a formamidinium cation, an imidazolium cation, or a guanidinium cation.

[0016] According to some embodiments of the present application, the cation includes a methylamine cation, thereby replenishing the methylamine lost in the perovskite layer during the heating process, reducing defects in the perovskite layer, and improving the long-term stability of the perovskite cell.

[0017] According to some embodiments of the present application, the passivation material includes one or more of: phenylpropionic acid methylamine salt, cesium 1-piperidine propionate, or 2-phenylethane-1-sulfonic acid formamidine salt.

[0018] According to some embodiments of the present application, the thickness of the passivation layer is 0.1 nm to 10 nm, thereby hindering the migration of anions in the perovskite layer while reducing the effect of the passivation layer on electron transport.

[0019] According to some embodiments of the present application, the material of the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide, or indium zinc oxide.

[0020] According to some embodiments of the present application, the material of the electrode layer includes copper. Thus, the passivation layer hinders the migration of anions in the perovskite layer to the electrode layer, thereby reducing the reaction between the anions in the passivation layer and the copper electrode and reducing the risk of decomposition of the copper electrode.

[0021] According to some embodiments of the present application, the material of the perovskite layer includes one or more of PBX3 or P2CDX6, wherein P includes organic cations, Li + 、Na + , K + , Rb + or Cs + One or more of; B includes Pb 2+ 、Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ 、Sr 2+ 、Ba 2+ 、Zn 2+ 、Ge 2+ 、Fe 2+ 、Co 2+ 、Cu 2+ and Ni 2+ One or more of; C includes Cs + 、Ag + , K + Ru + One or more of; D includes Bi 3+ 、Ni 3+ 、Fe 3+ 、Cu 3+ 、Sb 3+ or In 3+ One or more of; X includes Cl - Br - or I - One or more of .

[0022] According to some embodiments of the present application, B includes Pb 2+ or Sn 2+ One or more of .

[0023] According to some embodiments of the present application, C includes Ag + .

[0024] According to some embodiments of the present application, the perovskite layer includes I - .

[0025] According to some embodiments of the present application, the band gap of the perovskite layer is 1.20 eV-2.30 eV, thereby absorbing most of the light in the solar spectrum, from ultraviolet to infrared, and effectively converting it into electrical energy.

[0026] According to some embodiments of the present application, the thickness of the perovskite layer is 200 nm to 1000 nm, thereby improving the efficiency of the perovskite cell.

[0027] According to some embodiments of the present application, the perovskite cell further includes an electron transport layer disposed between the passivation layer and the electrode layer. Thus, when the perovskite cell is an inverted perovskite cell, the electron transport layer can hinder the migration of anions in the perovskite layer, reducing the probability of anions in the perovskite layer migrating to and reacting with the electrode layer, thereby improving the long-term stability of the perovskite cell.

[0028] According to some embodiments of the present application, the material of the electron transport layer includes one or more of fullerene and its derivatives, tin dioxide and its derivatives, or zinc oxide and its derivatives, thereby improving the electron transport capability and the efficiency of the perovskite cell.

[0029] According to some embodiments of the present application, the perovskite cell further includes a hole transport layer disposed between the passivation layer and the electrode layer. Thus, when the perovskite cell is a formal perovskite cell, the hole transport layer can also hinder the migration of anions in the perovskite layer, reducing the probability of anions in the perovskite layer migrating to and reacting with the electrode layer, thereby improving the long-term stability of the perovskite cell.

[0030] According to some embodiments of the present application, the material of the hole transport layer includes one or more of nickel oxide and its derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and its derivatives, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-bis(4-methoxyphenyl)amino]-9,9'-spirobifluorene and its derivatives, or poly-3-hexylthiophene and its derivatives. This improves the hole transport capability and the efficiency of the perovskite cell.

[0031] The second aspect of the present application provides an electrical device comprising the perovskite battery provided in the first aspect of the present application. Thus, the electrical device has good long-term stability and a long service life.

[0032] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become obvious from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Various other advantages and benefits will become apparent to those skilled in the art upon reading the detailed description of the preferred embodiment below. The accompanying drawings are for illustration purposes only and are not to be considered as limiting the present application. The same reference numerals are used throughout the drawings to denote the same components. In the drawings:

[0034] FIG1 is a schematic structural diagram of a perovskite battery according to an embodiment of the present application;

[0035] FIG2 is a schematic structural diagram of a perovskite battery according to another embodiment of the present application;

[0036] FIG3 is a schematic structural diagram of a perovskite battery according to another embodiment of the present application;

[0037] FIG4 is a schematic structural diagram of a perovskite battery according to another embodiment of the present application;

[0038] FIG5 is a schematic structural diagram of a perovskite battery according to another embodiment of the present application;

[0039] FIG6 is a schematic structural diagram of a perovskite cell according to another embodiment of the present application.

[0040] Explanation of reference numerals: 1: perovskite cell; 11: perovskite layer; 12: passivation layer; 13: electrode layer; 14: hole transport layer; 15: electron transport layer; 16: substrate. DETAILED DESCRIPTION

[0041] The following embodiments of the technical solution of the present application are described in detail. The following embodiments are only used to more clearly illustrate the technical solution of the present application and are therefore only used as examples and are not intended to limit the scope of protection of the present application.

[0042] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0043] For the sake of clarity, only certain numerical ranges are specifically disclosed herein. However, any lower limit may be combined with any upper limit to form an unspecified range; and any lower limit may be combined with other lower limits to form an unspecified range, and similarly, any upper limit may be combined with any other upper limit to form an unspecified range. In addition, each individually disclosed point or single value may itself serve as a lower limit or upper limit and be combined with any other point or single value, or with other lower limits or upper limits, to form an unspecified range.

[0044] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists alone, A and B exist simultaneously, and B exists alone. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0045] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application belongs; the terms used herein are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned figure descriptions are intended to cover non-exclusive inclusions.

[0046] As global ecological and energy shortages become increasingly severe, solar photovoltaic power generation has garnered widespread attention. Perovskite cells, as a new third-generation solar cell, have become a rising star in the solar cell field due to their low cost, simple preparation process, and high efficiency. However, perovskite cells are prone to defects during the preparation process. Because perovskite cells have a high tolerance for defects, defects have a minimal impact on their efficiency. However, defects in the perovskite layer are sites with rapid ion mobility. Anions in the perovskite layer can migrate to the electrode layer, reacting with it and causing its decomposition, thus affecting the long-term stability of the perovskite cell.

[0047] The perovskite battery proposed in the present application forms a potential barrier in the passivation layer by making the volume of the anions in the passivation layer larger than the volume of the cations in the passivation layer, thereby hindering the migration of the anions in the perovskite layer. At the same time, in order to reduce the risk of the anions in the passivation layer entering the perovskite layer, the volume of the anions in the passivation layer is made larger than the volume of the largest defect in the perovskite layer, thereby reducing the risk of the anions in the passivation layer entering the perovskite layer, and forming a region with a higher negative charge concentration on the surface of the passivation layer close to the perovskite layer, further hindering the migration of the anions in the perovskite layer, reducing the probability of the anions in the perovskite layer reacting with the electrode layer, and improving the long-term stability of the perovskite battery.

[0048] The perovskite battery disclosed in this application is a photovoltaic battery, and the perovskite battery disclosed in the embodiments of this application can be used as a power source for electrical devices, or can be assembled into a photovoltaic power generation system and store electrical energy in an energy storage system composed of energy storage batteries. Electrical devices may include street lights, signal indicators, insect killer lamps, electric fans, electric toys, electric tools, battery cars, electric cars, ships, spacecraft, etc., wherein electric toys may include fixed or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and spacecraft may include airplanes, rockets, space shuttles, and spacecraft, etc.; photovoltaic power generation systems may include large-scale ground photovoltaic power generation systems, distributed photovoltaic power generation and building-integrated photovoltaic power generation systems, etc.

[0049] In a first aspect, the present application provides a perovskite cell 1. Referring to Figures 1 and 2, the perovskite cell 1 includes a substrate 16, a perovskite layer 11, the perovskite layer 11 being disposed on one side of the substrate 16; a passivation layer 12, the passivation layer 12 being disposed on at least one side of the perovskite layer 11, the passivation layer 12 comprising a passivation material, the passivation material comprising anions and cations, the anions having a volume V1, the cations having a volume V2, V1>V3>V2, wherein V3 is the volume of the largest defect in the perovskite layer 11; and an electrode layer 13, the electrode layer 13 being disposed on a side of the passivation layer 12 facing away from the perovskite layer 11. Specifically, the passivation layer 12 may be disposed only between the perovskite layer 11 and the electrode layer 13 (see Figure 1); or the passivation layer 12 may be disposed between the perovskite layer 11 and the electrode layer 13 and between the substrate 16 and the perovskite layer 12 (see Figure 2).

[0050] In the perovskite battery 1 proposed in the present application, when the passivation layer 12 is provided between the perovskite layer 11 and the electrode layer 13, V1>V2, the smaller cations in the passivation layer 12 are easy to move, and the larger anions in the passivation layer 12 are difficult to move. A potential barrier is formed between the anions in the passivation layer 12 and the cations in the passivation layer 12, which can reduce the risk of the anions in the perovskite layer 11 passing through the passivation layer 12. At the same time, V1>V3, the anions in the passivation layer 12 cannot enter the perovskite layer 11 through the defect sites, which can reduce The probability of anions in the passivation layer 12 entering the perovskite layer 11 forms a region with a high negative charge concentration on the surface of the perovskite layer 11, further reducing the further migration of anions on the surface of the perovskite layer 11, thereby reducing the probability of anions on the surface of the perovskite layer 11 and within the perovskite layer 11 migrating to the electrode layer 13 and reacting with the electrode layer 13, thereby improving the long-term stability of the perovskite battery 1; when V3>V2, cations can enter the perovskite layer, compensating for defects in the perovskite layer, and improving the long-term stability of the perovskite battery 1. When the passivation layer 12 is provided between the perovskite layer 11 and the substrate 16, the risk of anions in the perovskite layer 11 migrating into the substrate 16 can be reduced, further reducing the probability of perovskite decomposition, and improving the long-term stability of the perovskite layer 11.

[0051] It should be noted that the passivation layer 12 of the present application can be directly arranged on the surface of the perovskite layer 11, or other functional layers can be provided between the passivation layer 12 and the perovskite layer 11, as long as the passivation layer 12 is provided between the electrode layer 13 and the perovskite layer 11.

[0052] The term “defect” in this application includes defects formed during the crystallization of the perovskite. The term “largest defect” in the perovskite layer 11 in this application refers to the defect with the largest volume in the perovskite layer 11 .

[0053] According to some embodiments of the present application, the volume of the anions in the passivation layer 12 can be made larger than the volume of the cations in the passivation layer 12 by making the number of atoms in the anions and cations in the passivation material meet a certain range. For example, the number of atoms other than hydrogen atoms in one of the anions in the passivation material can be 3-24, for example, 3, 5, 8, 11, 14, 17, 20 or 24, or a range consisting of any of the above values; the number of atoms other than hydrogen atoms in one of the cations in the passivation material can be 1-5, for example, 1, 2, 3, 4 or 5. As a result, the volume of the anions in the passivation layer 12 is larger than the volume of the cations in the passivation layer 12, and a potential barrier can be formed in the passivation layer 12 to hinder the migration of the anions in the perovskite layer 11, thereby reducing the risk of the anions in the perovskite layer 11 reacting with the electrode layer 13 and improving the long-term stability of the perovskite battery 1. According to some specific embodiments of the present application, the number of atoms other than hydrogen atoms in one anion of the passivation material may be 8-15, and the number of atoms other than hydrogen atoms in one cation of the passivation material may be 2-4.

[0054] According to some embodiments of the present application, the anion may include A1-R-A2, wherein A1 includes one or more of hydrogen, halogen, benzene ring, heterocycle or condensed ring, R includes one or more of an alkyl chain of 0-10 carbon atoms or an alkenyl group of 2-10 carbon atoms, and A2 includes one or more of a carboxylate, sulfonate, phosphonate or borate. As a result, the anions of the passivation layer 12 are relatively large and difficult to move in the passivation layer 12, while the small molecule cations of the passivation layer 12 are easy to move. The anions of the passivation layer 12 and the cations of the passivation layer 12 form a barrier to hinder the migration of anions in the perovskite layer 11. According to some specific embodiments of the present application, A1 may include one or more of the benzene ring or the heterocycle. According to some specific embodiments of the present application, R may include one or more of an alkyl chain of 2-5 carbon atoms or an alkenyl group of 2-5 carbon atoms. According to some specific embodiments of the present application, A2 may include one or more of a carboxylate, sulfonate or phosphonate.

[0055] According to some specific embodiments of the present application, the anions may include one or more of N, O, P, or S. Thus, N, O, P, or S can combine with defects on the surface of the perovskite layer 11, passivating the defects, reducing non-radiative recombination, and improving the stability of the defects. At the same time, N, O, P, or S have a strong interaction with the material of the perovskite layer 11, preventing the volatile components in the perovskite layer 11 from vaporizing during heating, further improving the stability of the perovskite cell 1.

[0056] According to some embodiments of the present application, since perovskite materials are sensitive to moisture, poor packaging of the perovskite cell 1 can easily lead to moisture inflow, thereby reducing the performance of the perovskite cell 1. The anions in the passivation layer 12 can include one or more of a benzene ring or an alkyl group. As a result, the passivation layer 12 can delay moisture intrusion into the perovskite layer 11, thereby increasing the service life of the perovskite cell 1.

[0057] According to some embodiments of the present application, the cations in the passivation layer 12 may include organic cations, Li + 、Na + , K + , Rb + or Cs + As a result, the cations in the passivation layer 12 are relatively small and can easily move within the passivation layer 12, while the large anions in the passivation layer 12 are difficult to move. The anions in the passivation layer 12 and the cations in the passivation layer 12 form a potential barrier to hinder the migration of anions in the perovskite layer 11. At the same time, the cations can enter the perovskite layer 11 to compensate for defects in the perovskite layer 11.

[0058] According to some specific embodiments of the present application, the organic cation may include one or more of methylamine cation, ethylamine cation, propylamine cation, butylamine cation, pentylamine cation, hexylamine cation, formamidine cation, imidazolium cation or guanidinium cation.

[0059] According to some specific embodiments of the present application, heating and other methods are used during the preparation process of the perovskite cell 1. The heating process may cause the loss of unstable components in the perovskite layer 11. To this end, the cations in the passivation layer 12 may include methylamine cations. As a result, the methylamine cations can enter the perovskite layer 11, replenishing the methylamine lost in the perovskite layer 11 during the heating process, reducing defects in the perovskite layer 11, and improving the long-term stability of the perovskite cell 1.

[0060] According to some embodiments of the present application, the passivation material may specifically include one or more of phenylpropionic acid methylamine salt, cesium 1-piperidine propionate, or 2-phenylethane-1-sulfonic acid formamidine salt.

[0061] According to some embodiments of the present application, the thickness of the passivation layer 12 may be 0.1 nm to 10 nm, for example, 0.1 nm, 1 nm, 2 nm, 3 nm, 4 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, or 10 nm, or may be within a range of any of the above values. Thus, while hindering the migration of anions in the perovskite layer 11, the effect of the passivation layer 12 on electron transport is reduced, thereby improving the efficiency of the perovskite cell 1.

[0062] In this application, the thickness is measured by: measuring the cross-section of the battery through a scanning electron microscope to obtain the thickness of the passivation layer 12.

[0063] According to some embodiments of the present application, the material of the electrode layer 13 may include one or more of silver, copper, carbon, gold, aluminum, indium tin oxide (ITO), aluminum doped zinc oxide (AZO), boron doped zinc oxide (BZO), or indium zinc oxide (IZO). According to some specific embodiments of the present application, the material of the electrode layer 13 may include copper. When the material of the electrode layer 13 includes copper, the passivation layer 12 can hinder the migration of anions in the perovskite layer 11, thereby reducing the probability of anions in the perovskite layer 11 migrating to the electrode layer 13 and reacting with copper, and improving the long-term stability of the perovskite battery 1.

[0064] According to some embodiments of the present application, the material of the perovskite layer 11 may include one or more of PBX3 or P2CDX6, where P includes an organic cation, Li + , Na + , K + , Rb + , or Cs + ; B includes Pb 2+ , Sn 2+ , Be 2+ , Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ , Zn 2+ , Ge 2+ , Fe 2+ , Co 2+ , Cu 2+ , and Ni 2+ ; C includes Cs + , Ag <​​​​​​​​​​​​​​​​​​​​​​​​​2+ or Sn 2+ According to some specific embodiments of the present application, C may include Ag. + .

[0065] According to some embodiments of the present application, the perovskite layer includes I - When the material of the electrode layer 13 includes copper and the perovskite layer 11 includes I - When the passivation layer 12 can hinder the perovskite layer 11 from - migration, thereby reducing the I - The probability of migrating to the electrode layer 13 and reacting with copper improves the long-term stability of the perovskite cell 1 .

[0066] According to some embodiments of the present application, the band gap of the perovskite layer 11 can be 1.20 eV-2.30 eV, for example, 1.4 eV, 1.6 eV, 1.8 eV, 2.0 eV, 2.2 eV, or 2.3 eV, or can be within a range of any of the above values. Thus, the band gap of the perovskite layer 11 satisfies the above range and can absorb most of the light in the solar spectrum, from ultraviolet to infrared, and can effectively convert it into electrical energy.

[0067] According to some embodiments of the present application, the thickness of the perovskite layer 11 can be 200 nm-1000 nm, for example, 200 nm, 300 nm, 400 nm, 500 nm, 600 nm, 700 nm, 800 nm, 900 nm, and 1000 nm, or can be within a range consisting of any of the above values. This increases the content of active material in the perovskite layer 11 and improves the efficiency of the perovskite cell 1.

[0068] According to some embodiments of the present application, the substrate 16 may include one or more of fluorine-doped tin dioxide (FTO), ITO, AZO, BZO, or IZO.

[0069] According to some embodiments of the present application, the perovskite cell 1 may be an inverted perovskite cell 1. Specifically, with reference to FIG3 , the perovskite cell 1 further includes an electron transport layer 15, which is disposed between the passivation layer 12 and the electrode layer 13. For example, the perovskite cell 1 may include a substrate 16; a hole transport layer 14, which is disposed on one side of the substrate 16; a perovskite layer 11, which is disposed on a side of the hole transport layer 14 facing away from the substrate 16; a passivation layer 12, which is disposed on a side of the perovskite layer 11 facing away from the hole transport layer 14; an electron transport layer 15, which is disposed on a side of the passivation layer 12 facing away from the perovskite layer 11; and an electrode layer 13, which is disposed on a side of the electron transport layer 15 facing away from the passivation layer 12. Therefore, when the perovskite cell 1 is an inverted perovskite cell 1, the migration of anions in the perovskite layer 11 can be hindered, the probability of anions in the perovskite layer 11 migrating to the electrode layer 13 and reacting with the electrode layer 13 is reduced, and the long-term stability of the perovskite cell 1 is improved.

[0070] According to some embodiments of the present application, referring to Figure 4, the perovskite battery 1 may further include: a substrate 16; a hole transport layer 14, wherein the hole transport layer 14 is arranged on one side of the substrate 16; a perovskite layer 11, wherein the perovskite layer 11 is arranged on the side of the hole transport layer 14 away from the substrate 16; an electron transport layer 15, wherein the electron transport layer 15 is arranged on the side of the perovskite layer 11 away from the hole transport layer 14; a passivation layer 12, wherein the passivation layer 12 is arranged on the side of the electron transport layer 15 away from the perovskite layer 11; and an electrode layer 13, wherein the electrode layer 13 is arranged on the side of the passivation layer 12 away from the electron transport layer 15.

[0071] According to some embodiments of the present application, the material of the electron transport layer 15 may include: one or more of fullerene and its derivatives, tin dioxide and its derivatives, or zinc oxide and its derivatives. According to some specific embodiments of the present application, the fullerene derivative may include [6,6]-phenyl-C 61 -Butyric acid methyl ester and its derivatives or [6,6]-phenyl-C 71 - one or more of methyl butyrate and its derivatives. Thus, the electron transport capability is improved, and the efficiency of the perovskite cell 1 is improved.

[0072] According to some embodiments of the present application, the perovskite cell 1 may also be a formal perovskite cell 1. Specifically, with reference to FIG5 , the perovskite cell 1 may further include a hole transport layer 14, wherein the hole transport layer 14 is disposed between the passivation layer 12 and the electrode layer 13. For example, the perovskite layer 11 includes a substrate 16; an electron transport layer 15, wherein the electron transport layer 15 is disposed on one side of the substrate 16; a perovskite layer 11, wherein the perovskite layer 11 is disposed on a side of the electron transport layer 15 facing away from the substrate 16; a passivation layer 12, wherein the passivation layer 12 is disposed on a side of the perovskite layer 11 facing away from the electron transport layer 15; a hole transport layer 14, wherein the hole transport layer 14 is disposed on a side of the passivation layer 12 facing away from the perovskite layer 11; and an electrode layer 13, wherein the electrode layer 13 is disposed on a side of the hole transport layer 14 facing away from the passivation layer 12. Therefore, when the perovskite cell 1 is a formal perovskite cell 1 , the migration of anions in the perovskite layer 11 can be hindered, the probability of anions in the perovskite layer 11 migrating to the electrode layer 13 and reacting with the electrode layer 13 is reduced, and the long-term stability of the perovskite cell 1 is improved.

[0073] According to some embodiments of the present application, referring to Figure 6, the perovskite battery 1 may further include: a substrate 16; an electron transport layer 15, the electron transport layer 15 being arranged on one side of the substrate 16; a perovskite layer 11, the perovskite layer 11 being arranged on the side of the electron transport layer 15 away from the substrate 16; a hole transport layer 14, the hole transport layer 14 being arranged on the side of the perovskite layer 11 away from the electron transport layer 15; a passivation layer 12, the passivation layer 12 being arranged on the side of the hole transport layer 14 away from the perovskite layer 11; and an electrode layer 13, the electrode layer 13 being arranged on the side of the passivation layer 12 away from the hole transport layer 14.

[0074] According to some embodiments of the present application, the material of the hole transport layer 14 may include one or more of nickel oxide and its derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and its derivatives, poly(3,4-ethylenedioxythiophene)-polystyrenesulfonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and its derivatives, or poly-3-hexylthiophene and its derivatives. Thus, the hole transport capability is improved, thereby improving the efficiency of the perovskite cell 1.

[0075] According to some embodiments of the present application, the passivation layer 12 may be formed by one or more of spin coating, spray coating, scraping, and slit coating. After the passivation layer 12 is formed, the solvent may be removed by annealing, vacuum cleaning, or anti-solvent cleaning.

[0076] The second aspect of the present application provides an electrical device, including the perovskite battery 1 provided in the first aspect of the present application. As a result, the electrical device has good long-term stability and a long service life. The electrical device may include lighting elements, display elements, mobile devices, etc., and may specifically include street lights, signal indicators, insect killer lamps, electric fans, electric toys, electric tools, battery vehicles, electric vehicles, ships, spacecraft, etc., wherein the electric toys may include fixed or mobile electric toys, such as game consoles, electric car toys, electric ship toys, and electric airplane toys, etc., and the spacecraft may include airplanes, rockets, space shuttles, and spacecraft, etc.; the photovoltaic power generation system may include a large-scale ground photovoltaic power generation system, a distributed photovoltaic power generation and building integrated photovoltaic power generation system, etc.

[0077] In order to make the technical problems, technical solutions and beneficial effects solved by the embodiments of the present application clearer, the following will be further described in detail with reference to the embodiments and the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The following description of at least one exemplary embodiment is actually only illustrative and is in no way intended to limit the present application and its applications. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0078] Example 1

[0079] 1. Preparation of perovskite cells

[0080] Provide FTO conductive glass with a size of 2.0*2.0cm. Remove 0.35cm of FTO at each end by laser etching to expose the glass substrate.

[0081] The etched FTO conductive glass was ultrasonically cleaned several times with water, acetone, and isopropyl alcohol in sequence;

[0082] The FTO conductive glass was blown dry of solvent under a nitrogen gun and placed in a UV ozone machine for further cleaning;

[0083] Preparation of a hole transport layer: A 10 mg / mL nickel oxide solution was spin-coated on a UV-ozone treated FTO substrate at 4000 rpm and annealed on a hot plate at 100°C for 30 minutes to obtain a hole transport layer having a thickness of 20 nm.

[0084] Preparation of perovskite layer: lead iodide, iodomethane, cesium iodide, methylamine bromide, and lead bromide were weighed and dissolved in a mixed solution of N,N-dimethylformamide (DMF) and dimethyl sulfoxide (DMSO), stirred for 3 hours, and filtered with a 0.22 μm organic filter membrane to obtain a perovskite precursor solution. The perovskite precursor solution was spin-coated on the hole transport layer at 3000 rpm, annealed at 100 ° C for 30 minutes, and cooled to room temperature to obtain a perovskite layer. The active material of the perovskite layer is Cs 0.05 FA 0.78 MA 0.17 PbI 2.49 Br 0.51 , the thickness of the perovskite layer is 550 nm;

[0085] Preparation of a passivation layer: Prepare a 1 mg / mL isopropanol precursor solution of passivation material 1, filter through a 0.22 μm organic filter membrane, spin-coat at 3000 rpm on the perovskite layer, and anneal to obtain a passivation layer having a thickness of 1 nm;

[0086] Preparation of electron transport layer: spin-coat 20 mg / mL (6,6)-phenyl-C on the passivation layer at 1500 rpm. 61 Methyl butyrate (PCBM) chlorobenzene solution, annealing at 100°C for 10 minutes, cooling to room temperature, the thickness of the electron transport layer is 50 nm;

[0087] Preparation of a hole blocking layer: spin coating an isopropanol solution of 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) with a mass concentration of 0.5 mg / mL on the electron transport layer at 5000 rpm, and annealing to obtain a hole blocking layer. The hole blocking layer has a thickness of 3 nm.

[0088] Prepare the electrode layer: clean the edges, select a suitable mask, place the obtained wafer into an evaporator, and evaporate the metal electrode Cu. The thickness of the electrode layer is 80 nm to obtain a perovskite battery.

[0089] The preparation methods of Examples 1 to 28 and Comparative Examples 1 to 3 are the same as those of Example 1. The differences from Example 1 are detailed in Table 1.

[0090] Performance testing:

[0091] 1. Photoelectric conversion efficiency test

[0092] Using an AM 1.5G solar simulator to provide 100mW / cm 2The perovskite cell was exposed to light and the volt-ampere characteristic curve was measured using a four-channel digital source meter (Keithley 2440) to obtain the photoelectric conversion efficiency of the perovskite cell. The photoelectric conversion efficiency of the perovskite cell was also tested on the third and thirtieth days. The test results are shown in Table 2.

[0093] Table 2

[0094] Conclusion: It can be seen from Table 2 that the attenuation of the photoelectric conversion efficiency of the perovskite cells of the present application (Example 1-Example 28) on the 30th day is lower than that of Comparative Example 1-Comparative Example 3, indicating that the perovskite cells proposed in the present application have excellent long-term stability.

[0095] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A perovskite battery, wherein: include: substrate; a perovskite layer, wherein the perovskite layer is disposed on one side of the substrate; A passivation layer, the passivation layer is disposed on at least one side of the perovskite layer, the passivation layer comprises a passivation material, the passivation material comprises anions and cations, the volume of the anions is V1, the volume of the cations is V2, V1>V3>V2, wherein V3 is the volume of the largest defect in the perovskite layer; An electrode layer is provided on a side of the passivation layer away from the perovskite layer.

2. The perovskite cell according to claim 1, wherein: The number of atoms other than hydrogen atoms in one anion of the passivation material is 3-24, and the number of atoms other than hydrogen atoms in one cation of the passivation material is 1-5.

3. The perovskite cell according to claim 1 or 2, wherein: The number of atoms other than hydrogen atoms in one anion of the passivation material is 8-15, and the number of atoms other than hydrogen atoms in one cation of the passivation material is 2-4.

4. The perovskite battery according to any one of claims 1 to 3, wherein: The anion includes A1-R-A2, wherein A1 includes one or more of hydrogen, halogen, benzene ring, heterocycle or condensed ring, R includes one or more of alkyl chain of 0-10 carbons, alkenyl of 2-10 carbons, and A2 includes one or more of carboxylate, sulfonate, phosphonate or borate.

5. The perovskite cell according to claim 4, wherein: One or more of the following conditions are met: A1 includes one or more of the benzene ring or the heterocyclic ring; R includes one or more of an alkyl chain of 2 to 5 carbon atoms or an alkenyl group of 2 to 5 carbon atoms; A2 includes one or more of a carboxylate, a sulfonate, or a phosphonate.

6. The perovskite cell according to any one of claims 1 to 5, wherein: The anions include one or more of N element, O element, P element or S element.

7. The perovskite cell according to any one of claims 1 to 6, wherein: The anion includes one or more of a benzene ring or an alkyl group.

8. The perovskite cell according to any one of claims 1 to 7, wherein: The cations include organic cations, Li + 、Na + , K + , Rb + or Cs + One or more of .

9. The perovskite cell according to claim 8, wherein: The organic cations include one or more of methylamine cations, ethylamine cations, propylamine cations, butylamine cations, pentylamine cations, hexylamine cations, formamidine cations, imidazolium cations or guanidinium cations.

10. The perovskite cell according to any one of claims 1 to 9, wherein: The cation includes a methylamine cation.

11. The perovskite cell according to any one of claims 1 to 10, wherein: The passivation material includes one or more of phenylpropionic acid methylamine salt, cesium 1-piperidinyl propionate or 2-phenylethane-1-sulfonic acid formamidine salt.

12. The perovskite cell according to any one of claims 1 to 11, wherein: The thickness of the passivation layer is 0.1 nm-10 nm.

13. The perovskite cell according to any one of claims 1 to 12, wherein: The perovskite cell meets one or more of the following conditions: The material of the electrode layer includes one or more of silver, copper, carbon, gold, aluminum, indium tin oxide, aluminum-doped zinc oxide, boron-doped zinc oxide or indium zinc oxide; The material of the electrode layer includes copper; The material of the perovskite layer includes one or more of PBX3 and P2CDX6, wherein P includes organic cations, Li + 、Na + , K + , Rb + or Cs + One or more of; B includes Pb 2+ Sn 2+ 、Be 2+ Mg 2+ , Ca 2+ , Sr 2+ , Ba 2+ 、Zn 2+ ,Ge 2+ , Fe 2+ 、Co 2+ , Cu 2+ and Ni 2+ One or more of; Optionally, B includes Pb 2+ or Sn 2+ One or more of; C includes Cs + 、Ag + , K + And Ru + One or more of; Optionally, C includes Ag + ; D includes Bi 3+ 、Ni 3+ , Fe 3+ , Cu 3+ , Sb 3+ or In 3+ One or more of; X includes Cl - Br - or I - One or more of; The perovskite layer comprises I - ; The band gap of the perovskite layer is 1.20 eV-2.30 eV; The thickness of the perovskite layer is 200nm-1000nm.

14. The perovskite cell according to any one of claims 1 to 13, wherein: Also includes: An electron transport layer is provided between the passivation layer and the electrode layer.

15. The perovskite cell according to claim 14, wherein: The material of the electron transport layer includes: one or more of fullerene and its derivatives, tin dioxide and its derivatives, or zinc oxide and its derivatives.

16. The perovskite cell according to any one of claims 1 to 15, wherein: Also includes: A hole transport layer is provided between the passivation layer and the electrode layer.

17. The perovskite cell according to claim 16, wherein: The material of the hole transport layer includes one or more of nickel oxide and its derivatives, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and its derivatives, poly(3,4-ethylenedioxythiophene)-polystyrene sulfonic acid and its derivatives, 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene and its derivatives, or poly-3-hexylthiophene and its derivatives.

18. An electrical device, wherein: A perovskite battery comprising any one of claims 1-17.

Images