Bridge arm, half bridge, power module and vehicle

Abstract

Provided in the present application are a bridge arm, a half bridge, a power module and a vehicle. The bridge arm comprises: a plurality of first semiconductor switches; a plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along an axis of symmetry; and a first metal sheet, wherein a first end and a second end of the first metal sheet are symmetrically distributed along an axis of symmetry, a third end of the first metal sheet is located on the axis of symmetry, the first end of the first metal sheet is connected to transmitting ends of the plurality of first semiconductor switches, and the second end of the first metal sheet is connected to transmitting ends of the plurality of second semiconductor switches. In the bridge arm, half bridge, power module and vehicle of the present application, current sharing between the first semiconductor switches and the second semiconductor switches, which are symmetrically distributed along an axis of symmetry, is realized, thereby reducing differences in loss, current and voltage stress, and a switching speed between the first semiconductor switches and the second semiconductor switches.

Description

Bridge arm, half bridge, power module and vehicle

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to the Chinese patent application filed with the China Patent Office on June 30, 2023, with application number 202310801586.0 and application name “A bridge arm, a half bridge, a power module and a vehicle”, and the Chinese patent application filed with the China Patent Office on June 30, 2023, with application number 202310800511.0 and application name “A bridge arm, a half bridge, a power module and a vehicle”. The entire contents of the Chinese patent applications with application numbers 202310801586.0 and 202310800511.0 are incorporated by reference into this application. Technical Field

[0003] The present application relates to the technical field of power modules, and in particular to a bridge arm, a half-bridge, a power module and a vehicle. Background Art

[0004] A power module, also known as an inverter module, is a device that converts direct current into alternating current. It is widely used in the industrial field. To achieve high output power, the power module needs to utilize multiple semiconductor switches in parallel to accommodate larger currents. Among them, bonding wires are usually used to connect multiple semiconductor switches in parallel. However, it is difficult to achieve current sharing between each semiconductor switch by adjusting the wire length using bonding wires. Uneven current sharing between semiconductor switches will lead to differences in loss, current and voltage stress, and switching speed. Such differences may cause a single semiconductor switch to be damaged due to long-term excessive stress or the current capacity of the semiconductor switch cannot be fully utilized.

[0005] Overview

[0006] The present application aims to solve one of the technical problems in the related art at least to a certain extent.

[0007] To this end, the object of the present application is to provide a bridge arm, a half-bridge, a power module and a vehicle.

[0008] To achieve the above-mentioned objectives, the first aspect of the present application provides a bridge arm, comprising: a plurality of first semiconductor switches; a plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a symmetry axis; a first metal sheet, wherein the first end and the second end of the first metal sheet are symmetrically distributed along the symmetry axis, and the third end of the first metal sheet is located on the symmetry axis, the first end of the first metal sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, and the second end of the first metal sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches.

[0009] In an embodiment of the present application, a bridge arm includes a plurality of first semiconductor switches, a plurality of second semiconductor switches, and a first metal sheet; the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along an axis of symmetry; the first end and the second end of the first metal sheet are symmetrically distributed along the axis of symmetry, and the third end of the first metal sheet is located on the axis of symmetry; the first end of the first metal sheet is respectively connected to the emitter ends of the plurality of first semiconductor switches, and the second end of the first metal sheet is respectively connected to the emitter ends of the plurality of second semiconductor switches. Because the first end and the second end of the first metal sheet are symmetrically distributed along the axis of symmetry, and the third end of the first metal sheet is located on the axis of symmetry, the current path length between the first semiconductor switch and the third end of the first metal sheet and the current path length between the second semiconductor switch and the third end of the first metal sheet, which are symmetrically distributed along the axis of symmetry, is equal to the current path length between the first semiconductor switch and the third end of the first metal sheet. This achieves current sharing between the first semiconductor switches and the second semiconductor switches, which are symmetrically distributed along the axis of symmetry, thereby reducing differences in loss, current and voltage stress, and switching speed between the first and second semiconductor switches. This further reduces the risk of damage to the first or second semiconductor switch due to prolonged excessive stress and the inability to fully utilize the current capacity of the first or second semiconductor switch.

[0010] In some embodiments, the bridge arm also includes: a first metal layer, the first metal layer is symmetrically distributed along the symmetry axis; a second metal layer, the second metal layer is symmetrically distributed along the symmetry axis, the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer; wherein, the second metal layer is provided with a first avoidance opening at the symmetry axis, one end of the first metal layer extends into the first avoidance opening and is connected to the third end of the first metal sheet, and a first gap is provided between the first metal layer and the second metal layer.

[0011] In some embodiments, the second metal layer includes: a first part, a first semiconductor switch is arranged on the first part, and the collector end of the first semiconductor switch is connected to the first part; a second part, a second semiconductor switch is arranged on the second part, and the collector end of the second semiconductor switch is connected to the second part; wherein the first part and the second part are symmetrically distributed along the symmetry axis, and a first avoidance opening is formed between the first part and the second part.

[0012] In some embodiments, the first metal layer includes: a third part, the third part is symmetrically distributed along the symmetry axis, the third part is arranged in the first avoidance opening and connected to the third end of the first metal sheet; a fourth part, the fourth part is symmetrically distributed along the symmetry axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

[0013] In some embodiments, a second avoidance opening is provided at one end of the second metal layer away from the second semiconductor switch, and a third avoidance opening is provided at one end of the second metal layer away from the first semiconductor switch; the bridge arm also includes: a third metal layer and a fourth metal layer, the third metal layer is provided in the second avoidance opening, and a second gap is provided between the third metal layer and the second metal layer, the third metal layer is respectively connected to the control ends of multiple first semiconductor switches, the fourth metal layer is provided in the third avoidance opening, and a third gap is provided between the fourth metal layer and the second metal layer, and the fourth metal layer is respectively connected to the control ends of multiple second semiconductor switches.

[0014] In some embodiments, the bridge arm further includes: a first pin, the first pin is arranged at an end of the third metal layer away from the second metal layer, and the first pin is connected to the third metal layer; a second pin, the second pin is arranged at an end of the fourth metal layer away from the second metal layer, and the second pin is connected to the fourth metal layer; wherein the first pin and the second pin are symmetrically distributed along the symmetry axis.

[0015] In some embodiments, the bridge arm also includes: a plurality of first binding wires, the first binding wires are arranged along a direction perpendicular to the axis of symmetry, the first end of the first binding wire is connected to the third metal layer, and the second end of the first binding wire is connected to the control end of the first semiconductor switch; a plurality of second binding wires, the second binding wires are arranged along a direction perpendicular to the axis of symmetry, the first end of the second binding wire is connected to the fourth metal layer, and the second end of the second binding wire is connected to the control end of the second semiconductor switch; a third wire, the third wire is arranged along a direction perpendicular to the axis of symmetry, the first end of the third wire is connected to the third metal layer, and the second end of the third wire is connected to the first pin; a fourth wire, the fourth wire is arranged along a direction perpendicular to the axis of symmetry, the first end of the fourth wire is connected to the fourth metal layer, and the second end of the fourth wire is connected to the second pin.

[0016] In some embodiments, the bridge arm further includes: an insulating substrate, the insulating substrate is symmetrically distributed along the symmetry axis, and the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are respectively arranged on the insulating substrate.

[0017] In some embodiments, the bridge arm further includes: a third pin, the third pin is arranged at an end of the second metal layer away from the second semiconductor switch, and the third pin is connected to the emitter end of the first semiconductor switch; a fourth pin, the fourth pin is arranged at an end of the second metal layer away from the first semiconductor switch, and the fourth pin is connected to the emitter end of the second semiconductor switch; wherein the third pin and the fourth pin are symmetrically distributed along the symmetry axis.

[0018] In some embodiments, the bridge arm further includes: a fifth wire, the fifth wire is arranged in a direction perpendicular to the axis of symmetry, the first end of the fifth wire is connected to the emitter of the first semiconductor switch, and the second end of the fifth wire is connected to the third pin; a sixth wire, the sixth wire is arranged in a direction perpendicular to the axis of symmetry, the first end of the sixth wire is connected to the emitter of the second semiconductor switch, and the second end of the sixth wire is connected to the fourth pin.

[0019] In some embodiments, the plurality of first semiconductor switches include: a first switch, the first switch being arranged on the second metal layer, the collector end of the first switch being connected to the second metal layer, and the emitter end of the first switch being connected to the first end of the first metal sheet; a second switch, the second switch being arranged on the second metal layer, the collector end of the second switch being connected to the second metal layer, and the emitter end of the second switch being connected to the first end of the first metal sheet; a third switch, the third switch being arranged on the second metal layer, the collector end of the third switch being connected to the second metal layer, and the emitter end of the third switch being connected to the first end of the first metal sheet; wherein the first switch, the second switch, and the third switch are not aligned along the axial direction of the symmetry axis.

[0020] In some embodiments, the first end of the first metal sheet includes: a first connecting sheet, which is connected to the transmitting end of the first switch; a second connecting sheet, which is connected to the transmitting end of the second switch; and a third connecting sheet, which is connected to the transmitting end of the third switch; wherein a first gap is formed between the first connecting sheet and the second connecting sheet, and a second gap is formed between the second connecting sheet and the third connecting sheet.

[0021] In some embodiments, the distance between the first switch and the axis of symmetry is greater than the distance between the second switch and the axis of symmetry, and the distance between the second switch and the axis of symmetry is greater than the distance between the third switch and the axis of symmetry; a third notch is provided on the side of the first metal sheet close to the first switch, a fourth notch is provided within the third notch, and the third notch and the fourth notch are symmetrically distributed along the axis of symmetry; the distance between the first notch and the axis of symmetry is greater than the distance between the second notch and the axis of symmetry.

[0022] In some embodiments, the bridge arm further includes: a first metal row, the first metal row is arranged axially along the axis of symmetry, and the first end of the first metal row is connected to the first metal layer; a second metal row, the second metal row is arranged axially along the axis of symmetry, and the first end of the second metal row is connected to the second metal layer.

[0023] In some embodiments, the first metal sheet has a positive projection on the first metal row and / or the second metal row; the distance between the first switch and the axis of symmetry is smaller than the distance between the third switch and the axis of symmetry, and the distance between the third switch and the axis of symmetry is smaller than the distance between the second switch and the axis of symmetry; a fifth notch is provided on the side of the first metal sheet close to the first switch, a sixth notch is provided on the side of the first metal sheet close to the third switch, a seventh notch is provided within the sixth notch, and the fifth notch, the sixth notch and the seventh notch are symmetrically distributed along the axis of symmetry; the distance between the first notch and the axis of symmetry is equal to the distance between the second notch and the axis of symmetry.

[0024] In some embodiments, the first metal sheet includes: a first planar sheet, a second planar sheet, a third planar sheet, a first arc-shaped sheet and a second arc-shaped sheet, the first planar sheet is respectively connected to the transmitting ends of multiple first semiconductor switches, the second planar sheet is respectively connected to the transmitting ends of multiple second semiconductor switches, the first planar sheet and the second plane are symmetrically distributed along the symmetry axis, the third planar sheet is located on the symmetry axis, the first arc-shaped sheet is arranged between the third planar sheet and the first planar sheet, the second arc-shaped sheet is arranged between the third planar sheet and the second planar sheet, and the first arc-shaped sheet and the second arc-shaped sheet are symmetrically distributed along the symmetry axis.

[0025] The second aspect of the present application provides a half bridge, including: a first upper bridge arm, the first upper bridge arm is the bridge arm provided in the first aspect of the present application; a first lower bridge arm, the first lower bridge arm is the bridge arm provided in the first aspect of the present application; wherein the first metal sheet of the first upper bridge arm is respectively connected to the first semiconductor switch collector end and the second semiconductor switch collector end of the first lower bridge arm.

[0026] In some embodiments, the second metal row of the first upper bridge arm and the first metal row of the first lower bridge arm are disposed close to and in parallel with each other, and a current direction of the second metal row of the first upper bridge arm is opposite to a current direction of the first metal row of the first lower bridge arm.

[0027] In some embodiments, the fourth notch of the first upper bridge arm and the seventh notch of the first lower bridge arm are arranged opposite to each other, and a size of the fourth notch of the first upper bridge arm is different from a size of the seventh notch of the first lower bridge arm.

[0028] In some embodiments, the insulating substrate of the first upper bridge arm is connected to the insulating substrate of the first lower bridge arm, and the first metal layer of the first upper bridge arm is connected to the second metal layer of the first lower bridge arm.

[0029] A third aspect of the present application provides a power module, including: a half-bridge as provided in the second aspect of the present application.

[0030] A fourth aspect of the present application provides a vehicle, comprising: a power module as provided in the third aspect of the present application.

[0031] In a fifth aspect, the present application provides another bridge arm, comprising: a substrate, a plurality of third semiconductor switches, the third semiconductor switches being arranged on the substrate; a plurality of fourth semiconductor switches, the fourth semiconductor switches being arranged on the substrate, the plurality of third semiconductor switches and the plurality of fourth semiconductor switches being symmetrically distributed along a first axis; a first metal wire, the first metal wire being respectively connected to the emitters of the plurality of third semiconductor switches; a second metal wire, the second metal wire being respectively connected to the emitters of the plurality of fourth semiconductor switches, the second metal wire and the first metal wire being symmetrically distributed along the first axis.

[0032] In the embodiment of the present application, since the first metal wire is respectively connected to the emitter ends of the plurality of third semiconductor switches, a common emitter end is realized between the plurality of third semiconductor switches, and since the second metal wire is respectively connected to the emitter ends of the plurality of fourth semiconductor switches, a common emitter end is realized between the plurality of fourth semiconductor switches. Therefore, when the plurality of third semiconductor switches are connected in parallel, the common emitter end structure between the plurality of third semiconductor switches and the common emitter end structure between the plurality of fourth semiconductor switches can be utilized to reduce the difference in current paths between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current sharing, thereby avoiding differences in losses, current and voltage stresses, and switching speeds between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being fully utilized.

[0033] In some embodiments, the bridge arm further includes: a metal sheet, which is symmetrically arranged along the first axis, and the first end of the metal sheet is respectively connected to the emission ends of multiple third semiconductor switches, and the second end of the metal sheet is respectively connected to the emission ends of multiple fourth semiconductor switches.

[0034] In some embodiments, the substrate includes: an insulating substrate; a fifth metal layer, the fifth metal layer is arranged on the insulating substrate, and the fifth metal layer is symmetrically arranged along the first axis, and the metal sheet is arranged on the fifth metal layer; a sixth metal layer, the sixth metal layer is arranged on the insulating substrate, and the sixth metal layer is symmetrically arranged along the first axis, the third semiconductor switch and the fourth semiconductor switch are respectively arranged on the sixth metal layer, and the collector end of the third semiconductor switch and the collector end of the third semiconductor switch are respectively connected to the sixth metal layer.

[0035] In some embodiments, the sixth metal layer includes: a fifth part, the fifth part is arranged on the insulating substrate, the third semiconductor switch is arranged on the fifth part, and the collector end of the third semiconductor switch is connected to the fifth part; the sixth part, the sixth part is arranged on the insulating substrate, the fourth semiconductor switch is arranged on the sixth part, and the collector end of the fourth semiconductor switch is connected to the sixth part; wherein the fifth part and the sixth part are symmetrically distributed along the first axis.

[0036] In some embodiments, the fifth metal layer includes: a seventh part, the seventh part is arranged on the insulating substrate, the seventh part is symmetrically arranged along the first axis, the seventh part is located between the fifth part and the sixth part, and the metal sheet is arranged on the seventh part; an eighth part, the eighth part is arranged on the insulating substrate, the eighth part is symmetrically arranged along the first axis, the eighth part is connected to the seventh part, and the eighth part is located on one side of the sixth metal layer.

[0037] In some embodiments, an eighth notch is provided on a side of the metal sheet away from the eighth portion or on a side close to the eighth portion.

[0038] In some embodiments, the bridge arm further includes: a third metal row, the third metal row is axially arranged along the first axis, and the first end of the third metal row is connected to the fifth metal layer; a fourth metal row, the fourth metal row is axially arranged along the first axis, and the first end of the fourth metal row is connected to the sixth metal layer.

[0039] In some embodiments, the bridge arm includes: three third semiconductor switches, which are distributed at intervals along the axial direction of the first axis, and the three third semiconductor switches are not aligned along the axial direction of the first axis; three fourth semiconductor switches, which are distributed at intervals along the axial direction of the first axis, and the three fourth semiconductor switches are not aligned along the axial direction of the first axis; three first metal wires and three second metal wires arranged at intervals, each first metal wire and each second metal wire includes: a first end, a second end and a third end distributed axially along the first axis; wherein the transmitting ends of the three third semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal wire, and the transmitting ends of the three fourth semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal wire.

[0040] The sixth aspect of the present application provides another half bridge, including: a second upper bridge arm, the second upper bridge arm is the bridge arm provided in the fifth aspect of the present application; a second lower bridge arm, the second lower bridge arm is the bridge arm provided in the fifth aspect of the present application; wherein the third semiconductor switch emitter end and the fourth semiconductor switch emitter end of the second upper bridge arm are connected to the third semiconductor switch collector end and the fourth semiconductor switch collector end of the second lower bridge arm.

[0041] In some embodiments, the fourth metal row of the second upper bridge arm and the third metal row of the second lower bridge arm are close to and parallel to each other, and the current direction of the fourth metal row of the second upper bridge arm is opposite to the current direction of the third metal row of the second lower bridge arm.

[0042] In some embodiments, the eighth notch of the second upper bridge arm is located on the side of the metal sheet of the second upper bridge arm close to the second lower bridge arm, and the eighth notch of the second lower bridge arm is located on the side of the metal sheet of the second lower bridge arm away from the second upper bridge arm, and the size of the eighth notch of the second upper bridge arm is different from the size of the eighth notch of the second lower bridge arm.

[0043] In some embodiments, the insulating substrate of the second upper bridge arm is connected to the insulating substrate of the second lower bridge arm, and the fifth metal layer of the second upper bridge arm is connected to the sixth metal layer of the second lower bridge arm.

[0044] In some embodiments, the half bridge also includes: an encapsulation insulating layer, the encapsulation insulating layer is arranged on the insulating substrate of the second upper bridge arm and the insulating substrate of the second lower bridge arm, and the fifth metal layer, sixth metal layer, third semiconductor switch, fourth semiconductor switch and metal sheet of the second upper bridge arm and the second lower bridge arm are all located in the encapsulation insulating layer; a first opening, the first opening is arranged at the fifth metal layer of the encapsulation insulating layer close to the second upper bridge arm, the first opening is symmetrically arranged along the first axis, and the third metal row of the second upper bridge arm is connected to the fifth metal layer of the second upper bridge arm after passing through the first opening; a second opening, the second opening is arranged at the sixth metal layer of the encapsulation insulating layer close to the second upper bridge arm, the second opening is symmetrically arranged along the first axis, and the fourth metal row of the second upper bridge arm is connected to the sixth metal layer of the second upper bridge arm after passing through the second opening; a third opening, the third opening is arranged at the fifth metal layer of the encapsulation insulating layer close to the second lower bridge arm, the third opening is symmetrically arranged along the first axis, and the third metal row of the second lower bridge arm is connected to the fifth metal layer of the second lower bridge arm after passing through the third opening.

[0045] In some embodiments, a first hot melt area is provided on the fifth metal layer of the second upper bridge arm at the first opening, the first hot melt area is symmetrically arranged along the first axis, and the third metal row of the second upper bridge arm is connected to the first hot melt area after passing through the first opening; a second hot melt area is provided on the sixth metal layer of the second upper bridge arm at the second opening, the second hot melt area is symmetrically arranged along the first axis, and the fourth metal row of the second upper bridge arm is connected to the second hot melt area after passing through the second opening; a third hot melt area is provided on the fifth metal layer of the second lower bridge arm at the third opening, the third hot melt area is symmetrically arranged along the first axis, and the third metal row of the second lower bridge arm is connected to the third hot melt area after passing through the third opening.

[0046] A seventh aspect of the present application provides a power module, including: a half-bridge as provided in the sixth aspect of the present application.

[0047] An eighth aspect of the present application provides a vehicle, comprising: a power module as provided in the seventh aspect of the present application.

[0048] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The above and / or additional aspects and advantages of the present application will become apparent and easily understood from the following description of the embodiments in conjunction with the accompanying drawings, in which:

[0050] FIG1 is a top view of a half-bridge according to an embodiment of the present application;

[0051] FIG2 is a top view of a half-bridge according to an embodiment of the present application;

[0052] FIG3 is a top view of a half-bridge according to an embodiment of the present application;

[0053] FIG4 is a top view of a metal sheet in a bridge arm according to an embodiment of the present application;

[0054] FIG5 is a top view of a metal sheet in a bridge arm according to an embodiment of the present application;

[0055] FIG6 is a right side view of a half bridge according to an embodiment of the present application;

[0056] FIG7 is a schematic structural diagram of a half-bridge proposed in another embodiment of the present application;

[0057] FIG8 is a schematic structural diagram of a half-bridge proposed in another embodiment of the present application;

[0058] FIG9 is a schematic structural diagram of a half-bridge proposed in another embodiment of the present application.

[0059] Description of the accompanying drawings:

[0060] a1, insulating substrate, a101, symmetry axis, a102, first metal layer, a103, second metal layer, a104, third metal layer, a105, fourth metal layer, a106, first gap, a107, second gap, a108, third gap;

[0061] a1021, part 3, a1022, part 4;

[0062] a1031, first part, a1032, second part, a1033, first avoidance exit, a1034, second avoidance exit, a1035, third avoidance exit;

[0063] a2, a first semiconductor switch, a201, a first switch, a202, a second switch, a203, a third switch;

[0064] a3, a second semiconductor switch;

[0065] a4, first metal sheet, a401, first connecting sheet, a402, second connecting sheet, a403, third connecting sheet, a404, first notch, a405, second notch, a406, third notch, a407, fourth notch, a408, fifth notch, a409, sixth notch, a410, seventh notch, a411, first planar sheet, a412, second planar sheet, a413, third planar sheet, a414, first curved sheet, a415, second curved sheet;

[0066] a5, first pin, a6, second pin, a7, first metal bus, a8, second metal bus, a9, first bonding wire, a10, second bonding wire, a11, third wire, a12, fourth wire, a13, third pin, a14, fifth wire, a15, fourth pin, a16, sixth wire;

[0067] a17, first upper bridge arm, a18, first lower bridge arm.

[0068] b1, substrate, b101, first axis, b102, base plate, b103, fifth metal layer, b104, sixth metal layer;

[0069] b1031, Part VII, b1032, Part VIII;

[0070] b1041, Part V, b1042, Part VI;

[0071] b2, a third semiconductor switch;

[0072] b3, a fourth semiconductor switch;

[0073] b4, first metal wire, b5, second metal wire;

[0074] b6, second metal sheet, b601, eighth notch;

[0075] b7, third metal row, b8, fourth metal row, b9, second upper bridge arm, b10, second lower bridge arm, b11, packaging insulation layer, b12, first opening, b13, second opening, b14, third opening, b15, first hot melt area, b16, second hot melt area, b17, third hot melt area.

[0076] Detailed description

[0077] In order to more clearly understand the above-mentioned objectives, features and advantages of the present application, the scheme of the present application will be further described below. It should be noted that, in the absence of conflict, the embodiments of the present application and the features therein can be combined with each other.

[0078] In the following description, many specific details are set forth to facilitate a full understanding of the present application, but the present application can also be implemented in other ways different from those described herein; it is obvious that the embodiments in the specification are only part of the embodiments of the present application, not all of the embodiments.

[0079] As shown in Figures 1, 2, 3 and 6, an embodiment of the present application proposes a bridge arm, including multiple first semiconductor switches a2, multiple second semiconductor switches a3 and a first metal sheet a4, the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3 are symmetrically distributed along the symmetry axis a101, the first end and the second end of the first metal sheet a4 are symmetrically distributed along the symmetry axis a101, and the third end of the first metal sheet a4 is located on the symmetry axis a101, the first end of the first metal sheet a4 is respectively connected to the transmitting ends of the multiple first semiconductor switches a2, and the second end of the first metal sheet a4 is respectively connected to the transmitting ends of the multiple second semiconductor switches a3.

[0080] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, and the second end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple second semiconductor switches a3, when the third end of the first metal sheet a4 is used as current output, multiple first semiconductor switches a2, multiple second semiconductor switches a3, and the first semiconductor switch a2 and the second semiconductor switch a3 can all be connected in parallel. Therefore, based on the principle of parallel shunt, the bridge arm can utilize a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving high output power of the bridge arm.

[0081] Furthermore, because the first and second ends of the first metal sheet a4 are symmetrically arranged along the symmetry axis a101, and the third end of the first metal sheet a4 is located on the symmetry axis a101, the current path lengths between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101, and between the first semiconductor switch a2 and the third end of the first metal sheet a4, are equal to the current path lengths between the second semiconductor switch a3 and the third end of the first metal sheet a4. This achieves current sharing between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101. This reduces differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switch a2 and the second semiconductor switch a3. This, in turn, reduces the risk of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to prolonged excessive stress, as well as the inability to fully utilize the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3.

[0082] Among them, the sheet-shaped first metal sheet a4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0083] Moreover, the sheet-shaped first metal sheet a4 has higher structural stability than the linear bonding wire, so that the first metal sheet a4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the first metal sheet a4, thereby achieving current sharing.

[0084] It should be noted that the parasitic inductance of the bridge arm is related to the length of the current path within it and the cross-sectional area of ​​the conductor. The longer the current path, the greater the parasitic inductance of the bridge arm. Conversely, the shorter the current path, the smaller the parasitic inductance of the bridge arm. At the same time, the larger the cross-sectional area of ​​the conductor, the smaller the parasitic inductance of the bridge arm. Conversely, the smaller the cross-sectional area of ​​the conductor, the greater the parasitic inductance of the bridge arm. Therefore, after the relative positions of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3 are determined, the length of the current path between the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3 is also determined. At the same time, since the cross-section of the first metal sheet a4 is a long strip structure and the cross-section of the bonding wire is a circular structure, considering the overall volume of the bridge arm, the cross-sectional area of ​​the first metal sheet a4 can be set larger. Therefore, using the first metal sheet a4 to realize parallel connection of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 can reduce the parasitic inductance of the bridge arm.

[0085] The first semiconductor switch a2 and the second semiconductor switch a3 are both semiconductor switches. The specific types of the first semiconductor switch a2 and the second semiconductor switch a3 can be set according to actual needs and are not limited to this. For example, the first semiconductor switch a2 and the second semiconductor switch a3 can both be silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFET), also known as SiC MOSFETs, wherein the emitter end of the first semiconductor switch a2 and the second semiconductor switch a3 is a source, the collector end of the first semiconductor switch a2 and the second semiconductor switch a3 is a drain, and the control end of the first semiconductor switch a2 and the second semiconductor switch a3 is a gate. The first semiconductor switch a2 and the second semiconductor switch a3 can both be insulated gate bipolar transistors (IGBTs), wherein the emitter end of the first semiconductor switch a2 and the second semiconductor switch a3 is an emitter, the collector end of the first semiconductor switch a2 and the second semiconductor switch a3 is a collector, and the control end of the first semiconductor switch a2 and the second semiconductor switch a3 is a gate.

[0086] Since the plurality of first semiconductor switches a2 and the plurality of second semiconductor switches a3 are symmetrically distributed along the symmetry axis a101, the number of the first semiconductor switches a2 and the second semiconductor switches a3 corresponds to each other. The specific number of the first semiconductor switches a2 and the second semiconductor switches a3 can be set according to actual needs and is not limited thereto. For example, the number of the first semiconductor switches a2 and the second semiconductor switches a3 can be two, three, four, five, etc.

[0087] The first metal sheet a4 is used for parallel connection between multiple first semiconductor switches a2, between multiple second semiconductor switches a3, and between the first semiconductor switch a2 and the second semiconductor switch a3. The specific type of the first metal sheet a4 can be set according to actual needs and is not limited to this. For example, the first metal sheet a4 can be a copper sheet.

[0088] As shown in Figures 1, 2, 3 and 6, in some embodiments, the bridge arm also includes a first metal layer 102 and a second metal layer a103, the first metal layer 102 is symmetrically distributed along the symmetry axis a101, and the second metal layer a103 is symmetrically distributed along the symmetry axis a101, the first semiconductor switch a2 and the second semiconductor switch a3 are respectively arranged on the second metal layer a103, and the collector end of the first semiconductor switch a2 and the collector end of the first semiconductor switch a2 are respectively connected to the second metal layer a103, wherein the second metal layer a103 is located at the symmetry axis a101 and is provided with a first avoidance opening a1033, one end of the first metal layer 102 extends into the first avoidance opening a1033 and is connected to the third end of the first metal sheet a4, and a first gap a106 is provided between the first metal layer 102 and the second metal layer a103.

[0089] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the emitter ends of multiple first semiconductor switches a2, the second end of the first metal sheet a4 is respectively connected to the emitter ends of multiple second semiconductor switches a3, and the third end of the first metal sheet a4 is connected to the first metal layer 102, the emitter ends of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 can use the first metal layer 102 to output current after being connected in parallel. At the same time, since the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 are respectively connected to the second metal layer a103, the collector ends of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 can use the second metal layer a103 to input current after being connected in parallel. As a result, the first metal layer 102 and the second metal layer a103 can serve as the output end and input end of the bridge arm, respectively, to ensure that the bridge arm has the function of unidirectional conduction or bidirectional conduction.

[0090] Among them, since the first metal layer 102 is symmetrically distributed along the symmetry axis a101, and the second metal layer a103 is symmetrically distributed along the symmetry axis a101, when the emitters of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the first metal layer 102 to output current, and the collectors of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the second metal layer a103 to input current, the current path lengths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby achieving current sharing between the first semiconductor switches a2 and the second semiconductor switches a3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch a2 and the second semiconductor switch a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem of the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 not being able to be fully utilized.

[0091] In addition, the setting of the first avoidance opening a1033 facilitates the connection between the first metal layer 102 and the third end of the first metal sheet a4, and the setting of the first gap a106 ensures the independence between the first metal layer 102 and the second metal layer a103, reducing the interference problem between the first metal layer 102 and the second metal layer a103, thereby ensuring the stable operation of the bridge arm.

[0092] It should be noted that since the first avoidance a1033 is arranged in the second metal layer a103 at the symmetry axis a101, and the first metal layer 102 is symmetrically distributed along the symmetry axis a101, the second metal layer a103 is symmetrically distributed along the symmetry axis a101, so that the first metal layer 102 is located on the inner side of the second metal layer a103. At the same time, since the third end of the first metal sheet a4 is located on the symmetry axis a101, and the first end and the second end of the first metal sheet a4 are symmetrically distributed along the symmetry axis a101, the middle part of the first metal sheet a4 is connected to the first metal layer 102, and the two ends of the first metal sheet a4 are respectively connected to the first semiconductor switch a2 and the second semiconductor switch a3.

[0093] When the emitters of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the first metal layer 102 to output current, and the collectors of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the second metal layer a103 to input current, the second metal layer a103, the first semiconductor switches a2, and the first metal layer 102 constitute a first current path, the second metal layer a103, the second semiconductor switches a3, and the first metal layer 102 constitute a second current path, and the first current loop and the second current loop are connected in parallel.

[0094] The specific types of the first metal layer 102 and the second metal layer a103 can be set according to actual needs and are not limited thereto.

[0095] As shown in Figure 2, in some embodiments, the second metal layer a103 includes a first part a1031 and a second part a1032, the first semiconductor switch a2 is arranged on the first part a1031, and the collector end of the first semiconductor switch a2 is connected to the first part a1031, the second semiconductor switch a3 is arranged on the second part a1032, and the collector end of the second semiconductor switch a3 is connected to the second part a1032, wherein the first part a1031 and the second part a1032 are symmetrically distributed along the symmetry axis a101, and a first avoidance opening a1033 is formed between the first part a1031 and the second part a1032.

[0096] It can be understood that since the collector end of the first semiconductor switch a2 is connected to the first part a1031, the collector ends of multiple first semiconductor switches a2 can use the first part a1031 to input current after being connected in parallel. At the same time, since the collector end of the second semiconductor switch a3 is connected to the second part a1032, the collector ends of multiple second semiconductor switches a3 can use the second part a1032 to input current after being connected in parallel. As a result, the first part a1031 and the second part a1032 of the second metal layer a103 can simultaneously serve as the input ends of the bridge arm, ensuring that the bridge arm has the function of unidirectional conduction or bidirectional conduction.

[0097] Among them, since the first part a1031 and the second part a1032 are symmetrically distributed along the symmetry axis a101, when the collector ends of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the second metal layer a103 to input current, the current path lengths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby achieving current sharing between the first semiconductor switches a2 and the second semiconductor switches a3, thereby further reducing the differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switches a2 and the second semiconductor switches a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 cannot be fully utilized.

[0098] The second metal layer a103 is arranged separately by the first part a1031 and the second part a1032, which can reserve a first avoidance opening a1033 for the first metal layer 102, thereby facilitating the connection between the first metal layer 102 and the first metal sheet a4. In this way, while ensuring the current sharing between the first semiconductor switch a2 and the second semiconductor switch a3 symmetrically distributed along the symmetry axis a101, the structure of the bridge arm is made more compact and reasonable, ensuring that the bridge arm has a smaller size to meet the usage requirements.

[0099] It should be noted that the specific types of the first part a1031 and the second part a1032 can be set according to actual needs and are not limited to this. For example, the first part a1031 and the second part a1032 can both be layered metals that are close to rectangular.

[0100] When the bridge arm is used in a power module, the first part a1031 and the second part a1032 can be used for current input at the same time.

[0101] As shown in Figure 2, in some embodiments, the first metal layer 102 includes a third part a1021 and a fourth part a1022, the third part a1021 is symmetrically distributed along the symmetry axis a101, the third part a1021 is arranged in the first avoidance opening a1033 and is connected to the third end of the first metal sheet a4, the fourth part a1022 is symmetrically distributed along the symmetry axis a101, the fourth part a1022 is connected to the third part a1021, and the fourth part a1022 is located on one side of the second metal layer a103.

[0102] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, the second end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple second semiconductor switches a3, and the third end of the first metal sheet a4 is connected to the third part a1021, and the fourth part a1022 is connected to the third part a1021, the transmitting ends of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 can use the fourth part a1022 to output current after being connected in parallel, thereby ensuring that the function of unidirectional conduction or bidirectional conduction of the bridge arm is realized.

[0103] Among them, since the third part a1021 is symmetrically distributed along the symmetry axis a101, and the fourth part a1022 is symmetrically distributed along the symmetry axis a101, when the transmitting ends of multiple first semiconductor switches a2 and multiple second semiconductor switches a3 use the fourth part a1022 to output current, the current path lengths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby achieving current sharing between the first semiconductor switch a2 and the second semiconductor switch a3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch a2 and the second semiconductor switch a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem that the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 cannot be fully utilized.

[0104] Since the third part a1021 is arranged in the first avoidance a1033 between the first part a1031 and the second part a1032, and the fourth part a1022 is located on one side of the second metal layer a103, while ensuring the current sharing between the first semiconductor switch a2 and the second semiconductor switch a3 symmetrically distributed along the symmetry axis a101, the structure of the bridge arm is more compact and reasonable, thereby ensuring that the bridge arm has a smaller size to meet the usage requirements.

[0105] It should be noted that the specific types of the third part a1021 and the fourth part a1022 can be set according to actual needs and are not limited to this. For example, the third part a1021 and the fourth part a1022 can both be layered metals that are nearly rectangular, and the sizes of the third part a1021 and the fourth part a1022 are much smaller than the sizes of the first part a1031 and the second part a1032. At the same time, the length direction of the fourth part a1022 can be perpendicular to the axial direction of the symmetry axis a101.

[0106] When the bridge arm is used in a power module, the fourth portion a1022 can be used for outputting DC current and can also be used for outputting AC current at the same time.

[0107] As shown in Figures 1 and 2, in some embodiments, a second avoidance opening a1034 is provided at one end of the second metal layer a103 away from the second semiconductor switch a3, and a third avoidance opening a1035 is provided at one end of the second metal layer a103 away from the first semiconductor switch a2. The bridge arm also includes a third metal layer a104 and a fourth metal layer a105. The third metal layer a104 is provided in the second avoidance opening a1034, and a second gap a107 is provided between the third metal layer a104 and the second metal layer a103. The third metal layer a104 is respectively connected to the control ends of multiple first semiconductor switches a2. The fourth metal layer a105 is provided in the third avoidance opening a1035, and a third gap a108 is provided between the fourth metal layer a105 and the second metal layer a103. The fourth metal layer a105 is respectively connected to the control ends of multiple second semiconductor switches a3.

[0108] It can be understood that since the third metal layer a104 is respectively connected to the control ends of multiple first semiconductor switches a2, the control ends of multiple first semiconductor switches a2 can use the third metal layer a104 to input control signals after being connected in parallel. At the same time, since the fourth metal layer a105 is respectively connected to the control ends of multiple second semiconductor switches a3, the control ends of multiple second semiconductor switches a3 can use the fourth metal layer a105 to input control signals after being connected in parallel, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0109] Among them, since the fourth metal layer a105 and the third metal layer a104 are symmetrically distributed along the symmetry axis a101, when the control signals are input to the control ends of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, the control current path lengths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby realizing synchronous control between the first semiconductor switches a2 and the second semiconductor switches a3, thereby further reducing the differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switches a2 and the second semiconductor switches a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem of the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 not being able to be fully utilized.

[0110] Moreover, by setting the second avoidance opening a1034 and the third avoidance opening a1035, the structure of the bridge arm is made more compact and reasonable while facilitating the connection of the third metal layer a104 with the control end of the first semiconductor switch a2 and the connection of the fourth metal layer a105 with the control end of the second semiconductor switch a3, thereby ensuring that the bridge arm has a smaller size to meet the usage requirements.

[0111] It should be noted that the specific types of the third metal layer a104 and the fourth metal layer a105 can be set according to actual needs and are not limited to this. For example, the third metal layer a104 and the fourth metal layer a105 can be layered metals that are nearly rectangular, and the sizes of the third metal layer a104 and the fourth metal layer a105 are much smaller than the sizes of the third part a1021 and the fourth part a1022. At the same time, the length directions of the third metal layer a104 and the fourth metal layer a105 are parallel to the axial direction of the symmetry axis a101.

[0112] As shown in Figures 2 and 3, in some embodiments, the bridge arm further includes a first pin a5 and a second pin a6, the first pin a5 is arranged at an end of the third metal layer a104 away from the second metal layer a103, and the first pin a5 is connected to the third metal layer a104, the second pin a6 is arranged at an end of the fourth metal layer a105 away from the second metal layer a103, and the second pin a6 is connected to the fourth metal layer a105, wherein the first pin a5 and the second pin a6 are symmetrically distributed along the symmetry axis a101.

[0113] It can be understood that since the third metal layer a104 is respectively connected to the control ends of multiple first semiconductor switches a2, and the first pin a5 is connected to the third metal layer a104, the control ends of multiple first semiconductor switches a2 can be connected in parallel to use the first pin a5 for input of control signals. At the same time, since the fourth metal layer a105 is respectively connected to the control ends of multiple second semiconductor switches a3, and the second pin a6 is connected to the fourth metal layer a105, the control ends of multiple second semiconductor switches a3 can be connected in parallel to use the second pin a6 for input of control signals, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0114] Among them, since the second pin a6 and the first pin a5 are symmetrically distributed along the symmetry axis a101, when the control ends of multiple first semiconductor switches a2 use the first pin a5 for signal input and the control ends of multiple second semiconductor switches a3 use the second pin a6 for signal input, the lengths of the control current paths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby achieving synchronous control between the first semiconductor switch a2 and the second semiconductor switch a3, thereby further reducing the difference in loss, current and voltage stress, and switching speed between the first semiconductor switch a2 and the second semiconductor switch a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem of the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 not being able to be fully utilized.

[0115] It should be noted that when the bridge arm is used in a power module, the first pin a5 and the second pin a6 can be connected to the control chip at the same time.

[0116] As shown in Figure 2, in some embodiments, the bridge arm also includes multiple first binding wires a9, multiple second binding wires a10, a third wire a11 and a fourth wire a12. The first binding wire a9 is arranged along a direction perpendicular to the symmetry axis a101, and the first end of the first binding wire a9 is connected to the third metal layer a104, and the second end of the first binding wire a9 is connected to the control end of the first semiconductor switch a2. The second binding wire a10 is arranged along a direction perpendicular to the symmetry axis a101, and the first end of the second binding wire a10 is connected to the fourth metal layer a105, and the second end of the second binding wire a10 is connected to the control end of the second semiconductor switch a3. The third wire a11 is arranged along a direction perpendicular to the symmetry axis a101, and the first end of the third wire a11 is connected to the third metal layer a104, and the second end of the third wire a11 is connected to the first pin a5. The fourth wire a12 is arranged along a direction perpendicular to the symmetry axis a101, and the first end of the fourth wire a12 is connected to the fourth metal layer a105, and the second end of the fourth wire a12 is connected to the second pin a6.

[0117] It can be understood that, by setting up multiple first binding wires a9, the third metal layer a104 is connected to the control ends of multiple first semiconductor switches a2, and by setting up the third binding wire, the third metal layer a104 is connected to the first pin a5, thereby making it possible for the control ends of multiple first semiconductor switches a2 to be connected in parallel and to use the first pin a5 for inputting control signals. At the same time, by setting up multiple second binding wires a10, the fourth metal layer a105 is connected to the control ends of multiple second semiconductor switches a3, and by setting up the fourth binding wire, the fourth metal layer a105 is connected to the second pin a6, thereby making it possible for the control ends of multiple second semiconductor switches a3 to be connected in parallel and to use the second pin a6 for inputting control signals, thereby ensuring the realization of the function of unidirectional conduction or bidirectional conduction of the bridge arm.

[0118] Among them, since the first binding wire a9 is set along a direction perpendicular to the symmetry axis a101, the second binding wire a10 is set along a direction perpendicular to the symmetry axis a101, the third wire a11 is set along a direction perpendicular to the symmetry axis a101, and the fourth wire a12 is set along a direction perpendicular to the symmetry axis a101, when there is a current conducted along the axial direction of the symmetry axis a101 on the bridge arm, the direction of the current can be perpendicular to the current conduction direction of the first binding wire a9, the second binding wire a10, the third wire a11 and the fourth wire a12 respectively, thereby effectively reducing the coupling mutual inductance between the first binding wire a9, the second binding wire a10, the third wire a11 and the fourth wire a12 and other devices on the bridge arm, thereby effectively reducing the parasitic inductance of the bridge arm, avoiding the generation of large spike voltages, and thus there is no need to reduce the switching speed of multiple first semiconductor switches a2 and multiple second semiconductor switches a3, ensuring that the bridge arm can give full play to its advantage of high switching speed.

[0119] It should be noted that the specific types of the first binding wire a9, the second binding wire a10, the third wire a11 and the fourth wire a12 can be set according to actual needs and are not limited to this. For example, the first binding wire a9, the second binding wire a10, the third wire a11 and the fourth wire a12 can all be linear metal.

[0120] The number of the first binding wires a9 corresponds to the number of the first semiconductor switches a2 , and the number of the second binding wires a10 corresponds to the number of the second semiconductor switches a3 .

[0121] As shown in Figures 1, 2, 3 and 6, in some embodiments, the bridge arm also includes an insulating substrate a1, which is symmetrically distributed along the symmetry axis a101, and the first metal layer 102, the second metal layer a103, the third metal layer a104 and the fourth metal layer a105 are respectively arranged on the insulating substrate a1.

[0122] It can be understood that through the setting of the insulating substrate a1, while carrying the first metal layer 102, the second metal layer a103, the third metal layer a104 and the fourth metal layer a105, the first metal layer 102, the second metal layer a103, the third metal layer a104 and the fourth metal layer a105 can also be insulated and protected, thereby reducing the interference of external devices on the bridge arm to cause short circuit, open circuit and other problems, thereby ensuring the stable operation of the bridge arm.

[0123] It should be noted that the specific type of the insulating substrate a1 can be set according to actual needs and is not restricted. The first metal layer 102, the second metal layer a103, the third metal layer a104 and the fourth metal layer a105 are arranged on the same surface of the insulating substrate a1, and a grounding layer can also be set on the surface of the insulating substrate a1 away from the first metal layer 102, the second metal layer a103, the third metal layer a104 and the fourth metal layer a105.

[0124] As shown in Figures 2 and 3, in some embodiments, the bridge arm further includes a third pin a13 and a fourth pin a15, the third pin a13 is arranged at an end of the second metal layer 102 away from the second semiconductor switch a3, and the third pin a13 is connected to the emitter of the first semiconductor switch a2, and the fourth pin a15 is arranged at an end of the second metal layer 102 away from the first semiconductor switch a2, and the fourth pin a15 is connected to the emitter of the second semiconductor switch 2, wherein the third pin a13 and the fourth pin a15 are symmetrically distributed along the symmetry axis a101.

[0125] It can be understood that since the third pin a13 is connected to the emitter end of the first semiconductor switch a2, the emitters of multiple first semiconductor switches a2 can be connected in parallel to use the third pin a13 for inputting control signals. At the same time, since the fourth pin a15 is connected to the emitter end of the second semiconductor switch 2, the emitters of multiple second semiconductor switches a3 can be connected in parallel to use the fourth pin a15 for inputting control signals. This ensures that the bridge arm has the function of unidirectional conduction or bidirectional conduction.

[0126] Among them, since the fourth pin a15 and the third pin a13 are symmetrically distributed along the symmetry axis a101, when the transmitting ends of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3 use the third pin a13 and the fourth pin a15 to input control signals, the lengths of the control current paths between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be equal, thereby achieving synchronous control between the first semiconductor switches a2 and the second semiconductor switches a3, thereby further reducing the differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switches a2 and the second semiconductor switches a3, thereby reducing the problem of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to long-term excessive stress and the problem of the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3 not being able to be fully utilized.

[0127] As shown in Figure 2, in some embodiments, the bridge arm further includes a fifth wire a14 and a sixth wire a16, the fifth wire a14 is arranged in a direction perpendicular to the symmetry axis a101, the first end of the fifth wire a14 is connected to the emitter of the first semiconductor switch a2, the second end of the fifth wire a14 is connected to the third pin a13, and the sixth wire a16 is arranged in a direction perpendicular to the symmetry axis a101, the first end of the sixth wire a16 is connected to the emitter of the second semiconductor switch a3, and the second end of the sixth wire a16 is connected to the fourth pin a15.

[0128] It can be understood that since the first end of the fifth wire a14 is connected to the emitter end of the first semiconductor switch a2, and the second end of the fifth wire a14 is connected to the third pin a13, the emitters of multiple first semiconductor switches a2 can be connected in parallel to the third pin a13 using the fifth wire a14, and then the control signal can be input using the third pin a13. At the same time, since the first end of the sixth wire a16 is connected to the emitter end of the second semiconductor switch a3, and the second end of the sixth wire a16 is connected to the fourth pin a15, the emitters of multiple second semiconductor switches a3 can be connected in parallel to the fourth pin a15 using the sixth wire a16, and then the control signal can be input using the fourth pin a15, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0129] Since the fifth wire a14 is arranged in a direction perpendicular to the symmetry axis a101, and the sixth wire a16 is arranged in a direction perpendicular to the symmetry axis a101, when a current is conducted along the symmetry axis a101 on the bridge arm, the direction of the current can be perpendicular to the current conduction direction of the fifth wire a14 and the sixth wire a16, respectively. As a result, the coupling mutual inductance between the fifth wire a14 and the sixth wire a16 and other devices on the bridge arm is effectively reduced, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large spike voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0130] It should be noted that the specific types of the fifth conductive wire a14 and the sixth conductive wire a16 can be set according to actual needs and are not limited thereto. For example, the fifth conductive wire a14 and the sixth conductive wire a16 can both be linear metals.

[0131] Since the emitters of multiple first semiconductor switches a2 are connected in parallel through the first metal sheet a4, only one fifth binding wire needs to be set, and the fifth binding wire can be connected to the emitter of any first semiconductor switch a2. Similarly, since the emitters of multiple second semiconductor switches a3 are connected in parallel through the first metal sheet a4, only one sixth binding wire needs to be set, and the sixth binding wire can be connected to the emitter of any second semiconductor switch a3.

[0132] Since the first binding wire a9, the second binding wire a10, the third wire a11, the fourth wire a12, the fifth wire a14 and the sixth wire a16 are all arranged along a direction perpendicular to the symmetry axis a101, interference occurs between the fifth wire a14 and the first binding wire a9, the second binding wire a10, and between the sixth wire a16 and the third binding wire and the fourth binding wire. Therefore, the fifth binding wire and the sixth binding wire can be arranged along a direction close to perpendicular to the symmetry axis a101.

[0133] As shown in Figures 2, 4 and 5, in some embodiments, the multiple first semiconductor switches a2 include a first switch a201, a second switch a202 and a third switch a203, the first switch a201 is arranged on the second metal layer a103, and the collector end of the first switch a201 is connected to the second metal layer a103, and the emitter end of the first switch a201 is connected to the first end of the first metal sheet a4, the second switch a202 is arranged on the second metal layer a103, and the collector end of the second switch a202 is connected to the second metal layer a103, and the emitter end of the second switch a202 is connected to the first end of the first metal sheet a4, the third switch a203 is arranged on the second metal layer a103, and the collector end of the third switch a203 is connected to the second metal layer a103, and the emitter end of the third switch a203 is connected to the first end of the first metal sheet a4, wherein the first switch a201, the second switch a202 and the third switch a203 are not aligned along the axial direction of the symmetry axis a101.

[0134] It can be understood that since the emitter ends of the first switch a201, the second switch a202 and the third switch a203 are simultaneously connected to the first end of the first metal sheet a4, and the collector ends of the first switch a201, the second switch a202 and the third switch a203 are simultaneously connected to the second metal layer a103, three parallel paths are formed on the bridge arm, namely, the path formed by the second metal layer a103, the first switch a201 and the first metal sheet a4, the path formed by the second metal layer a103, the second switch a202 and the first metal sheet a4, and the path formed by the second metal layer a103, the third switch a203 and the first metal sheet a4. Therefore, the bridge arm can utilize the parallel connection of the first switch a201, the second switch a202 and the third switch a203 to carry a larger current, thereby achieving high output power.

[0135] Among them, since the third end of the first metal sheet a4 is connected to the first metal layer 102, the second metal layer 102 can simultaneously output the current of the first switch a201, the second switch a202 and the third switch a203, and since the current will choose the path with the least impedance, the end of the first metal layer 102 close to the first switch a201 or the end of the first metal layer 102 close to the third switch a203 is used as the current collection point for current output, which results in the first switch a201, the second switch a202 and the third switch a203 being connected along the symmetry axis a10. 1, the current path lengths of the first switch a201, the second switch a202, and the third switch a203 to the first metal layer 102 will be unequal. Therefore, by setting the first switch a201, the second switch a202, and the third switch a203 to be unequal along the axial direction of the symmetry axis a101, it is possible to ensure that the first switch a201, the second switch a202, and the third switch a203 have appropriate relative positions on the first metal sheet a4, thereby facilitating current sharing among the first switch a201, the second switch a202, and the third switch a203.

[0136] It should be noted that, since the plurality of first semiconductor switches a2 and the plurality of second semiconductor switches a3 are symmetrically arranged, the plurality of second semiconductor switches a3 also include three switches corresponding to the first switch a201 , the second switch a202 and the third switch a203 .

[0137] The distance between the first switch a201 and the symmetry axis a101 , the distance between the second switch a202 and the symmetry axis a101 , and the distance between the third switch a203 and the symmetry axis a101 can be set according to actual needs and are not limited thereto.

[0138] As shown in Figures 4 and 5, in some embodiments, the first end of the first metal sheet a4 includes a first connecting sheet a401, a second connecting sheet a402 and a third connecting sheet a403, the first connecting sheet a401 is connected to the transmitting end of the first switch a201, the second connecting sheet a402 is connected to the transmitting end of the second switch a202, and the third connecting sheet a403 is connected to the transmitting end of the third switch a203, wherein a first notch a404 is formed between the first connecting sheet a401 and the second connecting sheet a402, and a second notch a405 is formed between the second connecting sheet a402 and the third connecting sheet a403.

[0139] It can be understood that, by setting the first connecting piece a401, the connection between the first end of the first metal sheet a4 and the transmitting end of the first switch a201 is realized, by setting the second connecting piece a402, the connection between the first end of the first metal sheet a4 and the transmitting end of the second switch a202 is realized, and by setting the third connecting piece a403, the connection between the first end of the first metal sheet a4 and the transmitting end of the third switch a203 is realized, thereby ensuring the stable parallel connection between the first switch a201, the second switch a202 and the third switch a203. At the same time, due to the setting of the first notch a404 and the second notch a405, there is a certain distance between the transmitting end of the first switch a201, the transmitting end of the second switch a202 and the transmitting end of the third switch a203, thereby reducing the mutual interference between the first switch a201, the second switch a202 and the third switch a203, and ensuring the stable operation of the first switch a201, the second switch a202 and the third switch a203.

[0140] It should be noted that the first connecting piece a401, the second connecting piece a402 and the third connecting piece a403 can have the same size and shape, or can have different sizes and shapes, and there is no limitation on this.

[0141] The distance between the first notch a404 and the symmetry axis a101 and the distance between the second notch a405 and the symmetry axis a101 may be the same or different, and there is no limitation thereto.

[0142] The size and shape of the first connecting piece a401, the second connecting piece a402 and the third connecting piece a403, as well as the distance from the first notch a404 to the symmetry axis a101 and the distance from the second notch a405 to the symmetry axis a101 will affect the distance from the first switch a201, the second switch a202 and the third switch a203 to the current collection point of the first metal layer 102.

[0143] On the one hand, current balancing between the first semiconductor switches a2 and the second semiconductor switches a3 symmetrically distributed along the symmetry axis a101 can be achieved through the symmetry between the first semiconductor switches a2 and the second semiconductor switches a3, the symmetry of the first metal sheet a4, the symmetry between the first portion a1031 and the second portion a1032, and the symmetry between the third portion a1021 and the fourth portion a1022. This can also be achieved through other methods, which are not limited to this. On the other hand, current balancing between the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3 can be achieved by adjusting the current paths between the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, thereby controlling the length of the current paths. The current path adjustment method can be set according to actual needs and is not limited to this.

[0144] As shown in Figure 4, in some embodiments, the distance between the first switch a201 and the symmetry axis a101 is greater than the distance between the second switch a202 and the symmetry axis a101, the distance between the second switch a202 and the symmetry axis a101 is greater than the distance between the third switch a203 and the symmetry axis a101, and a third notch a406 is provided on a side of the first metal sheet a4 close to the first switch a201. A fourth notch a407 is provided within the third notch a406, and the third notch a406 and the fourth notch a407 are symmetrically distributed along the symmetry axis a101, respectively. The distance between the first notch a404 and the symmetry axis a101 is greater than the distance between the second notch a405 and the symmetry axis a101.

[0145] It can be understood that, since the distance between the first switch a201 and the symmetry axis a101 is greater than the distance between the second switch a202 and the symmetry axis a101, and the distance between the second switch a202 and the symmetry axis a101 is greater than the distance between the third switch a203 and the symmetry axis a101, the distances between the first switch a201, the second switch a202, and the third switch a203 and the symmetry axis a101 increase successively. As a result, when one end of the first metal layer 102 close to the first switch a201 serves as a current collection point for current output, the current path length from the first switch a201 to the current collection point is smaller than the current path length from the second switch a202 to the current collection point, and the current path length from the third switch a203 to the current collection point is larger than the current path length from the second switch a202 to the current collection point.

[0146] At the same time, since the first metal sheet a4 is provided with a third notch a406 on a side close to the first switch a201, and a fourth notch a407 is provided in the third notch a406, the current path from the first switch a201 to the current converging point is bent in a direction close to the second switch a202, thereby further extending the length of the current path from the first switch a201 to the current converging point and making it equal to the length of the current path from the second switch a202 to the current converging point. Since the distance between the first notch a404 and the symmetry axis a101 is greater than the distance between the second notch a405 and the symmetry axis a101, the current path from the third switch a203 to the current converging point is longer. The length can be further shortened and made equal to the length of the current path from the second switch a202 to the current sink point, thereby achieving current sharing among the first switch a201, the second switch a202, and the third switch a203, reducing the differences in loss, current and voltage stress, and switching speed among the first switch a201, the second switch a202, and the third switch a203, thereby reducing the problem of damage to the first switch a201, the second switch a202, or the third switch a203 due to long-term excessive stress and the problem of the current capacity of the first switch a201, the second switch a202, or the third switch a203 not being fully utilized.

[0147] It should be noted that the distances between the first switch a201, the second switch a202 and the third switch a203 and the symmetry axis a101, the distances between the first notch a404 and the second notch a405 and the symmetry axis a101, and the sizes of the third notch a406 and the fourth notch a407 can be set according to actual needs and are not limited thereto.

[0148] As shown in Figure 3, in some embodiments, the bridge arm also includes a first metal row a7 and a second metal row a8, the first metal row a7 is arranged axially along the symmetry axis a101, and the first end of the first metal row a7 is connected to the first metal layer 102, the second metal row a8 is arranged axially along the symmetry axis a101, and the first end of the second metal row a8 is connected to the second metal layer a103.

[0149] It can be understood that since the first end of the first metal row a7 is connected to the first metal layer 102, the emitter ends of the first switch a201, the second switch a202 and the third switch a203 can be connected in parallel to use the first metal row a7 to output current. At the same time, since the first end of the second metal row a8 is connected to the second metal layer a103, the collector ends of the first switch a201, the second switch a202 and the third switch a203 can be connected in parallel to use the second metal row a8 to input current, thereby ensuring the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0150] It should be noted that the specific types of the first metal bar a7 and the second metal bar a8 can be set according to actual needs and are not limited thereto. For example, the first metal bar a7 and the second metal bar a8 can both be copper bars. The three switches symmetrically distributed along the symmetry axis a101 with respect to the first switch a201, the second switch a202, and the third switch a203 also use the first metal bar a7 for current output and the second metal bar a8 for current input.

[0151] Among them, the first metal row a7 is arranged along the axial direction of the symmetry axis a101, and the second metal row a8 is arranged along the axial direction of the symmetry axis a101, so that the current conduction directions of the first metal row a7 and the second metal row a8 are respectively perpendicular to the current conduction directions of the first binding line a9, the second binding line a10, the third wire a11, the fourth wire a12, the fifth wire a14 and the sixth wire a16, thereby reducing the current coupling between the first metal row a7 and the second metal row a8 and the first binding line a9, the second binding line a10, the third wire a11, the fourth wire a12, the fifth wire a14 and the sixth wire a16.

[0152] As shown in Figure 5, in some embodiments, the first metal sheet a4 has an orthographic projection on the first metal row a7 and / or the second metal row a8, the distance between the first switch a201 and the symmetry axis a101 is smaller than the distance between the third switch a203 and the symmetry axis a101, the distance between the third switch a203 and the symmetry axis a101 is smaller than the distance between the second switch a202 and the symmetry axis a101, a fifth notch a408 is provided on a side of the first metal sheet a4 close to the first switch a201, a sixth notch a409 is provided on a side of the first metal sheet a4 close to the third switch a203, a seventh notch a410 is provided within the sixth notch a409, and the fifth notch a408, the sixth notch a409 and the seventh notch a410 are symmetrically distributed along the symmetry axis a101, and the distance between the first notch a404 and the symmetry axis a101 is equal to the distance between the second notch a405 and the symmetry axis a101.

[0153] It can be understood that, since the distance between the first switch a201 and the symmetry axis a101 is smaller than the distance between the third switch a203 and the symmetry axis a101, and the distance between the third switch a203 and the symmetry axis a101 is smaller than the distance between the second switch a202 and the symmetry axis a101, the distance between the second switch a202 and the symmetry axis a101 is the largest, and the distance between the first switch a201 and the symmetry axis a101 is the smallest. Therefore, when one end of the first metal layer 102 close to the first switch a201 serves as a current collection point for current output, the current path length from the first switch a201 to the current collection point is smaller than the current path length from the second switch a202 to the current collection point, and the current path length from the third switch a203 to the current collection point is larger than the current path length from the second switch a202 to the current collection point.

[0154] At the same time, since the fifth notch a408 is provided on the side of the first metal sheet a4 close to the first switch a201, the current path from the first switch a201 to the current converging point is bent in a direction close to the second switch a202, thereby further extending the length of the current path from the first switch a201 to the current converging point. Since the sixth notch a409 is provided on the side of the first metal sheet a4 close to the third switch a203, and the seventh notch a410 is provided in the sixth notch a409, the current path from the third switch a203 to the current converging point is bent in a direction close to the second switch a202, thereby further shortening the length of the current path from the third switch a203 to the current converging point.

[0155] Moreover, since the first metal sheet a4 has a positive projection on the first metal row a7 and / or the second metal row a8, mutual inductance is generated between the first metal row a7 and / or the second metal row a8 and the first metal sheet a4, thereby affecting the equivalent inductance of the first switch a201, the second switch a202 and the third switch a203 to the current collection point respectively. Therefore, by utilizing the mutual inductance caused by the first metal row a7 and / or the second metal row a8, the current path length from the first switch a201 to the current collection point can be further extended and equal to the current path length from the second switch a202 to the current collection point, and the current path length from the third switch a203 to the current collection point can be further shortened and equal to the current path length from the second switch a202 to the current collection point.

[0156] Therefore, when the first metal sheet a4 is affected by the mutual inductance of the first metal row a7 and / or the second metal row a8, current sharing can be achieved among the first switch a201, the second switch a202 and the third switch a203, thereby reducing the differences in losses, current and voltage stresses, and switching speeds among the first switch a201, the second switch a202 and the third switch a203, thereby reducing the problem of damage to the first switch a201, the second switch a202 or the third switch a203 due to long-term excessive stress and the problem of the current capacity of the first switch a201, the second switch a202 or the third switch a203 not being able to be fully utilized.

[0157] It should be noted that the distances between the first switch a201, the second switch a202 and the third switch a203 and the symmetry axis a101, the distances between the first notch a404 and the second notch a405 and the symmetry axis a101, and the sizes of the fifth notch a408, the sixth notch a409 and the seventh notch a410 can be set according to actual needs and are not limited to this.

[0158] The first metal sheet a4 may have an orthographic projection only on the first metal row a7, or only on the second metal row a8, or on both the first metal row a7 and the second metal row a8, which is not limited.

[0159] As shown in Figure 6, in some embodiments, the first metal sheet a4 includes a first planar sheet a411, a second planar sheet a412, a third planar sheet a413, a first arc-shaped sheet a414 and a second arc-shaped sheet a415. The first planar sheet a411 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, and the second planar sheet a412 is respectively connected to the transmitting ends of multiple second semiconductor switches a3. The first planar sheet a411 and the second plane are symmetrically distributed along the symmetry axis a101. The third planar sheet a413 is located on the symmetry axis a101. The first arc-shaped sheet a414 is arranged between the third planar sheet a413 and the first planar sheet a411. The second arc-shaped sheet a415 is arranged between the third planar sheet a413 and the second planar sheet a412. The first arc-shaped sheet a414 and the second arc-shaped sheet a415 are symmetrically distributed along the symmetry axis a101.

[0160] It can be understood that, by using the first planar piece a411 as the first end of the first metal piece a4, the first metal piece a4 and the transmitting ends of multiple first semiconductor switches a2 are connected, by using the second planar piece a412 as the second end of the first metal piece a4, the first metal piece a4 and the transmitting ends of multiple second semiconductor switches a3 are connected, and by using the third planar piece a413 as the third end of the first metal piece a4, the current output of the first metal piece a4 is realized, thereby ensuring the stable parallel connection of multiple first semiconductor switches a2 and multiple second semiconductor switches a3, thereby ensuring the realization of the function of unidirectional conduction or bidirectional conduction of the bridge arm.

[0161] Among them, through the setting of the first arc-shaped piece a414 and the second arc-shaped piece a415, not only the first planar piece a411, the second planar piece a412 and the third planar piece a413 are stably connected, but also the first metal piece a4 is ensured to have a longer current conduction path, thereby facilitating the realization of current sharing between multiple first semiconductor switches a2 and multiple second semiconductor switches a3.

[0162] It should be noted that the specific types of the first planar sheet a411, the second planar sheet a412, the third planar sheet a413, the first curved sheet a414, and the second curved sheet a415 can be configured according to actual needs and are not limited thereto. Furthermore, strip-shaped holes can be provided on each of the first curved sheet a414 and the second curved sheet a415 to facilitate the passage of adhesive during the plastic encapsulation of the bridge arm and provide effective support for the first metal sheet a4.

[0163] As shown in Figures 1, 2 and 3, an embodiment of the present application also proposes a half bridge, including a first upper bridge arm a17 and a first lower bridge arm a18, the first upper bridge arm a17 is a bridge arm as in the embodiment of the present application, and the first lower bridge arm a18 is a bridge arm as in the embodiment of the present application, wherein the first metal sheet a4 of the first upper bridge arm a17 is respectively connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18.

[0164] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, and the second end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple second semiconductor switches a3, when the third end of the first metal sheet a4 is used as a current output, multiple first semiconductor switches a2, multiple second semiconductor switches a3, and the first semiconductor switch a2 and the second semiconductor switch a3 can all be connected in parallel. Therefore, based on the principle of parallel shunt, the bridge arm can utilize a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving high output power of the half bridge.

[0165] Furthermore, because the first and second ends of the first metal sheet a4 are symmetrically arranged along the symmetry axis a101, and the third end of the first metal sheet a4 is located on the symmetry axis a101, the current path lengths between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101, and between the first semiconductor switch a2 and the third end of the first metal sheet a4, are equal to the current path lengths between the second semiconductor switch a3 and the third end of the first metal sheet a4. This achieves current sharing between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101. This reduces differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switch a2 and the second semiconductor switch a3. This, in turn, reduces the risk of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to prolonged excessive stress, as well as the inability to fully utilize the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3.

[0166] Among them, the sheet-shaped first metal sheet a4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0167] Moreover, the sheet-shaped first metal sheet a4 has higher structural stability than the linear bonding wire, so that the first metal sheet a4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the first metal sheet a4, thereby achieving current sharing.

[0168] It should be noted that the specific arrangement between the first upper bridge arm a17 and the first lower bridge arm a18 can be set according to actual needs and is not limited thereto.

[0169] As shown in Figure 3, in some embodiments, the second metal row a8 of the first upper bridge arm a17 and the first metal row a7 of the first lower bridge arm a18 are close to each other and arranged in parallel, and the current direction of the second metal row a8 of the first upper bridge arm a17 is opposite to the current direction of the first metal row a7 of the first lower bridge arm a18.

[0170] It can be understood that since the current direction of the second metal row a8 of the first upper bridge arm a17 is opposite to the current direction of the first metal row a7 of the first lower bridge arm a18, the second metal row a8 and the first metal row a7 can be mutually inductive, and then the mutual inductance is used to offset the parasitic inductance between the second metal row a8 and the first metal row a7, thereby effectively reducing the parasitic inductance of the half bridge and avoiding the generation of a large spike voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, thereby ensuring that the first upper bridge arm a17 and the first lower bridge arm a18 can fully utilize their advantages of high switching speed.

[0171] It should be noted that the distance between the second metal row a8 of the first upper bridge arm a17 and the first metal row a7 of the first lower bridge arm a18 can be set according to actual needs and is not limited thereto.

[0172] The first metal row a7 of the first upper bridge arm a17 and the second metal row a8 of the first lower bridge arm a18 can be set separately or can be the same metal row, and there is no limitation on this. Among them, the first metal layer 102 of the first upper bridge arm a17 and the second metal layer a103 of the first lower bridge arm a18 share a metal row to reduce the material and volume of the half bridge.

[0173] The second metal row a8 of the first upper bridge arm a17 can be connected to the positive pole of direct current, the first metal row a7 of the first lower bridge arm a18 can be used to input the negative pole of direct current, and the first metal row a7 of the first upper bridge arm a17 and the second metal row a8 of the first lower bridge arm a18 can be used to output single-phase alternating current.

[0174] In some embodiments, the fourth notch a407 of the first upper bridge arm a17 is opposite to the seventh notch a410 of the first lower bridge arm a18 , and the size of the fourth notch a407 of the first upper bridge arm a17 is different from the size of the seventh notch a410 of the first lower bridge arm a18 .

[0175] It can be understood that, by setting the fourth notch a407 of the first upper bridge arm a17, the current path of the first metal sheet a4 in the first upper bridge arm a17 can be adjusted, so that the current path lengths of the multiple semiconductor switches of the first upper bridge arm a17 on the first metal sheet a4 can be kept equal, thereby achieving current sharing between the various semiconductor switches in the first upper bridge arm a17. At the same time, by setting the seventh notch a410 of the first lower bridge arm a18, the current path of the first metal sheet a4 in the first lower bridge arm a18 can be adjusted, so that the current path lengths of the multiple semiconductor switches of the first lower bridge arm a18 on the first metal sheet a4 can be kept equal, thereby achieving current sharing between the various semiconductor switches in the first lower bridge arm a18, thereby further reducing the differences in losses, current and voltage stresses, and switching speeds between the semiconductor switches, thereby reducing the problem of damage to a single semiconductor switch due to long-term excessive stress or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0176] As shown in Figures 1 and 2, in some embodiments, the insulating substrate a1 of the first upper bridge arm a17 is connected to the insulating substrate a1 of the first lower bridge arm a18, and the first metal layer 102 of the first upper bridge arm a17 is connected to the second metal layer a103 of the first lower bridge arm a18.

[0177] It can be understood that since the insulating substrate a1 of the first upper bridge arm a17 is connected to the insulating substrate a1 of the first lower bridge arm a18, the first metal layer 102 of the first upper bridge arm a17 is connected to the second metal layer a103 of the first lower bridge arm a18, so that the first upper bridge arm a17 and the first lower bridge arm a18 can share an insulating substrate a1 and form an integral structure, and the first metal layer 102 of the first upper bridge arm a17 and the second metal layer a103 of the first lower bridge arm a18 can share a metal layer and form an integral structure. As a result, not only the first metal sheet a4 of the first upper bridge arm a17 is connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18, but also the structural stability of the half bridge can be guaranteed, while reducing the material and volume of the half bridge, making the cost of the half bridge lower and more convenient to use.

[0178] The embodiment of the present application further provides a power module, comprising a half-bridge as in the embodiment of the present application.

[0179] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, and the second end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple second semiconductor switches a3, when the third end of the first metal sheet a4 is used as current output, multiple first semiconductor switches a2, multiple second semiconductor switches a3, and first semiconductor switch a2 and second semiconductor switch a3 can be connected in parallel. Therefore, based on the principle of parallel shunt, the bridge arm can use a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving high output power of the power module.

[0180] Furthermore, because the first and second ends of the first metal sheet a4 are symmetrically arranged along the symmetry axis a101, and the third end of the first metal sheet a4 is located on the symmetry axis a101, the current path lengths between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101, and between the first semiconductor switch a2 and the third end of the first metal sheet a4, are equal to the current path lengths between the second semiconductor switch a3 and the third end of the first metal sheet a4. This achieves current sharing between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101. This reduces differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switch a2 and the second semiconductor switch a3. This, in turn, reduces the risk of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to prolonged excessive stress, as well as the inability to fully utilize the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3.

[0181] Among them, the sheet-shaped first metal sheet a4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0182] Moreover, the sheet-shaped first metal sheet a4 has higher structural stability than the linear bonding wire, so that the first metal sheet a4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the first metal sheet a4, thereby achieving current sharing.

[0183] Since the first metal sheet a4 of the first upper bridge arm a17 is connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18, the emitter end of the first semiconductor switch a2 and the emitter end of the second semiconductor switch a3 of the first upper bridge arm a17 can be connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18, thereby making the first semiconductor switch a2 and the second semiconductor switch a3 of the first upper bridge arm a17 and the first semiconductor switch a2 and the second semiconductor switch a3 of the first lower bridge arm a18 form a half-bridge circuit, and then the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0184] It should be noted that the specific type of the power module can be set according to actual needs and is not limited to this. For example, the power module may include three half bridges, and the power output by the three half bridges constitutes a three-phase alternating current.

[0185] An embodiment of the present application further provides a vehicle, comprising a power module according to an embodiment of the present application.

[0186] It can be understood that since the first end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple first semiconductor switches a2, and the second end of the first metal sheet a4 is respectively connected to the transmitting ends of multiple second semiconductor switches a3, when the third end of the first metal sheet a4 is used as current output, multiple first semiconductor switches a2, multiple second semiconductor switches a3, and first semiconductor switch a2 and second semiconductor switch a3 can be connected in parallel. Therefore, based on the principle of parallel shunt, the bridge arm can use a larger number of semiconductor switches connected in parallel to achieve a larger current carrying capacity, thereby achieving high output power of the power module.

[0187] Furthermore, because the first and second ends of the first metal sheet a4 are symmetrically arranged along the symmetry axis a101, and the third end of the first metal sheet a4 is located on the symmetry axis a101, the current path lengths between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101, and between the first semiconductor switch a2 and the third end of the first metal sheet a4, are equal to the current path lengths between the second semiconductor switch a3 and the third end of the first metal sheet a4. This achieves current sharing between the first semiconductor switch a2 and the second semiconductor switch a3, which are symmetrically arranged along the symmetry axis a101. This reduces differences in losses, current and voltage stresses, and switching speeds between the first semiconductor switch a2 and the second semiconductor switch a3. This, in turn, reduces the risk of damage to the first semiconductor switch a2 or the second semiconductor switch a3 due to prolonged excessive stress, as well as the inability to fully utilize the current capacity of the first semiconductor switch a2 or the second semiconductor switch a3.

[0188] Among them, the sheet-shaped first metal sheet a4 has a larger cross-sectional area than the linear bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage. There is no need to reduce the switching speed of the multiple first semiconductor switches a2 and the multiple second semiconductor switches a3, ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0189] Moreover, the sheet-shaped first metal sheet a4 has higher structural stability than the linear bonding wire, so that the first metal sheet a4 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path lengths between each semiconductor switch equal by adjusting parameters such as shape and size of the first metal sheet a4, thereby achieving current sharing.

[0190] Since the first metal sheet a4 of the first upper bridge arm a17 is connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18, the emitter end of the first semiconductor switch a2 and the emitter end of the second semiconductor switch a3 of the first upper bridge arm a17 can be connected to the collector end of the first semiconductor switch a2 and the collector end of the second semiconductor switch a3 of the first lower bridge arm a18, thereby making the first semiconductor switch a2 and the second semiconductor switch a3 of the first upper bridge arm a17 and the first semiconductor switch a2 and the second semiconductor switch a3 of the first lower bridge arm a18 form a half-bridge circuit, and then the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0191] As shown in Figures 7 and 8, an embodiment of the present application proposes another bridge arm, including a substrate b1, multiple third semiconductor switches b2, multiple second semiconductor switches b3, a first metal wire b4 and a second metal wire b5. The third semiconductor switch b2 is arranged on the substrate b1, the second semiconductor switch b3 is arranged on the substrate b1, the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, the first metal wire b4 is respectively connected to the transmitting ends of the multiple third semiconductor switches b2, the second metal wire b5 is respectively connected to the transmitting ends of the multiple second semiconductor switches b3, and the second metal wire b5 and the first metal wire b4 are symmetrically distributed along the first axis b101.

[0192] It can be understood that since the first metal wire b4 is respectively connected to the emitter ends of multiple third semiconductor switches b2, a common emitter end is realized between the multiple third semiconductor switches b2, and since the second metal wire b5 is respectively connected to the emitter ends of multiple second semiconductor switches b3, a common emitter end is realized between the multiple second semiconductor switches b3. Therefore, when the multiple third semiconductor switches b2 are connected in parallel, the common emitter end structure between the multiple third semiconductor switches b2 and the common emitter end structure between the multiple second semiconductor switches b3 can be used to reduce the current path difference between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0193] Since the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, and the second metal wire b5 and the first metal wire b4 are symmetrically distributed along the first axis b101, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are equal, which is conducive to achieving current sharing and thereby improving the performance of the bridge arm.

[0194] It should be noted that the third semiconductor switch b2 and the second semiconductor switch b3 are both semiconductor switches. The specific types of the third semiconductor switch b2 and the second semiconductor switch b3 can be set according to actual needs and are not limited to this. For example, the third semiconductor switch b2 and the second semiconductor switch b3 can both be silicon carbide (SiC) metal-oxide semiconductor field-effect transistors (MOSFET), also known as SiC MOSFET, wherein the emitter end of the third semiconductor switch b2 and the second semiconductor switch b3 is the source (Source), the collector end of the third semiconductor switch b2 and the second semiconductor switch b3 is the drain (Drain), and the control end of the third semiconductor switch b2 and the second semiconductor switch b3 is the gate (Gate); the third semiconductor switch b2 and the second semiconductor switch b3 can both be insulated gate bipolar transistors (Insulated Gate Bipolar Transistors). Transistor, IGBT), wherein the emitter end of the third semiconductor switch b2 and the second semiconductor switch b3 is an emitter (Emitter), the collector end of the third semiconductor switch b2 and the second semiconductor switch b3 is a collector (Collector), and the control end of the third semiconductor switch b2 and the second semiconductor switch b3 is a gate (Gate).

[0195] Since the plurality of third semiconductor switches b2 and the plurality of second semiconductor switches b3 are symmetrically distributed along the first axis b101, the number of the third semiconductor switches b2 and the second semiconductor switches b3 corresponds one to one, wherein the specific number of the third semiconductor switches b2 and the second semiconductor switches b3 can be set according to actual needs and is not limited to this. For example, the number of the third semiconductor switches b2 and the second semiconductor switches b3 can be two, three, four, five, etc.

[0196] Since the first metal wire b4 and the second metal wire b5 are symmetrically distributed along the first axis b101, the number of the first metal wires b4 and the second metal wires b5 corresponds to each other. The specific number of the first metal wires b4 and the second metal wires b5 can be set according to actual needs and is not limited to this. For example, the number of the first metal wires b4 and the second metal wires b5 can be one, two, three, four, five, etc.

[0197] The first metal wire b4 and the second metal wire b5 are both metal wires. The specific types of the first metal wire b4 and the second metal wire b5 can be set according to actual needs and are not limited to this. For example, the first metal wire b4 and the second metal wire b5 can both be linear metals.

[0198] As shown in Figures 7 and 8, in some embodiments, the bridge arm also includes a second metal sheet b6, which is symmetrically arranged along the first axis b101, and the first ends of the second metal sheet b6 are respectively connected to the transmitting ends of multiple third semiconductor switches b2, and the second ends of the second metal sheet b6 are respectively connected to the transmitting ends of multiple second semiconductor switches b3.

[0199] It can be understood that since the first end of the second metal sheet b6 is respectively connected to the transmitting end of multiple third semiconductor switches b2, and the second end of the second metal sheet b6 is respectively connected to the transmitting end of multiple second semiconductor switches b3, multiple third semiconductor switches b2 and multiple second semiconductor switches b3 are connected in parallel, so that the bridge arm can utilize multiple semiconductor switches to achieve larger current carrying capacity, thereby achieving high output power.

[0200] At the same time, the second metal sheet b6 has a larger cross-sectional area than the bonding wire, thereby effectively reducing the parasitic inductance of the bridge arm and avoiding the generation of a large peak voltage. There is no need to reduce the switching speed of the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3, ensuring that the bridge arm can fully utilize its advantage of high switching speed.

[0201] Moreover, the second metal sheet b6 has higher structural stability than the bonding wire, so that the second metal sheet b6 can be maintained after adjusting parameters such as shape and size, so that the bridge arm can make the current path length between each semiconductor switch equal by adjusting parameters such as the shape and size of the second metal sheet b6, thereby achieving current sharing, thereby avoiding differences in losses, current and voltage stresses, and switching speeds between each semiconductor switch, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0202] Among them, since the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, and the second metal sheet b6 is symmetrically distributed along the first axis b101, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are equal, which is conducive to achieving current sharing and thus improving the performance of the bridge arm.

[0203] It should be noted that the parasitic inductance of the bridge arm is related to the length of the current path within it and the cross-sectional area of ​​the conductor. The longer the current path, the greater the parasitic inductance of the bridge arm. Conversely, the shorter the current path, the smaller the parasitic inductance of the bridge arm. At the same time, the larger the cross-street area of ​​the conductor, the smaller the parasitic inductance of the bridge arm. Conversely, the smaller the cross-sectional area of ​​the conductor, the greater the parasitic inductance of the bridge arm. Therefore, after the relative positions of the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are determined, the length of the current path between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 is also determined. At the same time, since the cross-section of the second metal sheet b6 is a long strip structure and the cross-section of the bonding wire is a circular structure, considering the overall volume of the bridge arm, the cross-sectional area of ​​the second metal sheet b6 can be set larger. Therefore, the use of the second metal sheet b6 to realize the parallel connection of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can reduce the parasitic inductance of the bridge arm.

[0204] The second metal sheet b6 is used for parallel connection between multiple third semiconductor switches b2 and multiple second semiconductor switches b3. The specific type of the second metal sheet b6 can be set according to actual needs and is not limited to this. For example, the second metal sheet b6 can be a copper sheet.

[0205] The first metal wire b4 can be set at the first end of the second metal sheet b6 to realize the common emitter end of multiple third semiconductor switches b2, and the second metal wire b5 can be set at the second end of the second metal sheet b6 to realize the common emitter end of multiple second semiconductor switches b3.

[0206] The substrate b1 is used to carry a plurality of third semiconductor switches b2 and a plurality of second semiconductor switches b3. The specific type of the substrate b1 can be set according to actual needs and is not limited thereto.

[0207] As shown in Figures 7 and 8, in some embodiments, the substrate b1 includes an insulating substrate b102, a first metal layer b103 and a sixth metal layer b104, the first metal layer b103 is arranged on the insulating substrate b102, and the first metal layer b103 is symmetrically arranged along the first axis b101, the second metal sheet b6 is arranged on the first metal layer b103, the sixth metal layer b104 is arranged on the insulating substrate b102, and the sixth metal layer b104 is symmetrically arranged along the first axis b101, the third semiconductor switch b2 and the second semiconductor switch b3 are respectively arranged on the sixth metal layer b104, and the collector end of the third semiconductor switch b2 and the collector end of the third semiconductor switch b2 are respectively connected to the sixth metal layer b104.

[0208] It can be understood that since the first end of the second metal sheet b6 is respectively connected to the emitter ends of multiple third semiconductor switches b2, the second end of the second metal sheet b6 is respectively connected to the emitter ends of multiple second semiconductor switches b3, and the second metal sheet b6 is arranged on the first metal layer b103, the emitter ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can be connected to other devices using the first metal layer b103 after being connected in parallel. At the same time, since the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 are respectively connected to the sixth metal layer b104, the collector ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can be connected to other devices using the sixth metal layer b104 after being connected in parallel. As a result, the first metal layer b103 and the sixth metal layer b104 can be connected to other devices as the current output end and current input end of the bridge arm, respectively, thereby facilitating the realization of the unidirectional conduction or bidirectional conduction function of the bridge arm.

[0209] Among them, since the first metal layer b103 is symmetrically arranged along the first axis b101, and the sixth metal layer b104 is symmetrically arranged along the first axis b101, when the emitters of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 are connected to other devices using the first metal layer b103, and the collectors of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 are connected to other devices using the sixth metal layer b104, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 can be equal, thereby facilitating the realization of current sharing among the semiconductor switches, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0210] By setting up the insulating substrate b102, while carrying the first metal layer b103 and the sixth metal layer b104, the first metal layer b103 and the sixth metal layer b104 can also be insulated and protected, thereby preventing the bridge arm from being interfered with by external devices and causing problems such as short circuit and open circuit, thereby ensuring the stable operation of the bridge arm.

[0211] It should be noted that since the second metal sheet b6 is arranged on the first metal layer b103, the middle part of the second metal sheet b6 is connected to the first metal layer b103, and the two ends of the second metal sheet b6 are respectively connected to the third semiconductor switch b2 and the second semiconductor switch b3. At this time, the second metal sheet b6 can include three planar sheets and two arc-shaped sheets, and the two arc-shaped sheets are arranged at intervals between the three planar sheets, and the three planar sheets are respectively connected to the third semiconductor switch b2, the first metal layer b103 and the second semiconductor switch b3.

[0212] The specific type of the insulating substrate b102 can be set according to actual needs and is not limited to this. A grounding layer can also be set on the side of the insulating substrate b102 away from the first metal layer b103 and the sixth metal layer b104.

[0213] The specific types of the first metal layer b103 and the sixth metal layer b104 can be set according to actual needs and are not limited thereto.

[0214] As shown in Figure 7, in some embodiments, the sixth metal layer b104 includes a fifth part b1041 and a sixth part b1042, the fifth part b1041 is arranged on the insulating substrate b102, the third semiconductor switch b2 is arranged on the fifth part b1041, and the collector end of the third semiconductor switch b2 is connected to the fifth part b1041, the sixth part b1042 is arranged on the insulating substrate b102, the second semiconductor switch b3 is arranged on the sixth part b1042, and the collector end of the second semiconductor switch b3 is connected to the sixth part b1042, wherein the fifth part b1041 and the sixth part b1042 are symmetrically distributed along the first axis b101.

[0215] It can be understood that since the collector end of the third semiconductor switch b2 is connected to the fifth part b1041, the collector ends of multiple third semiconductor switches b2 can be connected in parallel to other devices using the fifth part b1041. At the same time, since the collector end of the second semiconductor switch b3 is connected to the sixth part b1042, the collector ends of multiple second semiconductor switches b3 can be connected in parallel to other devices using the sixth part b1042. As a result, the fifth part b1041 and the sixth part b1042 of the sixth metal layer b104 can simultaneously serve as the current input ends of the bridge arm to be connected to other devices, thereby facilitating the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0216] Among them, since the fifth part b1041 and the sixth part b1042 are symmetrically distributed along the first axis b101, when the collector ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 are connected to other devices using the sixth metal layer b104, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 can be equal, thereby facilitating the realization of current sharing between each semiconductor switch, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among each semiconductor switch, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0217] The sixth metal layer b104 is arranged separately on the insulating substrate b102 through the fifth part b1041 and the sixth part b1042, which can leave space for the first metal layer b103, thereby facilitating the connection between the first metal layer b103 and the second metal sheet b6. In this way, while ensuring current sharing between each semiconductor switch, the structure of the bridge arm is made more compact and reasonable, ensuring that the bridge arm has a smaller size to meet usage requirements.

[0218] It should be noted that the specific types of the fifth part b1041 and the sixth part b1042 can be set according to actual needs and are not limited to this. For example, the fifth part b1041 and the sixth part b1042 can both be layered metals that are nearly rectangular.

[0219] When the bridge arm is used in a power module, the fifth part b1041 and the sixth part b1042 can be used for direct current input at the same time.

[0220] As shown in Figure 7, in some embodiments, the first metal layer b103 includes a seventh part b1031 and an eighth part b1032, the seventh part b1031 is arranged on the insulating substrate b102, the seventh part b1031 is symmetrically arranged along the first axis b101, and the seventh part b1031 is located between the fifth part b1041 and the sixth part b1042, the second metal sheet b6 is arranged on the seventh part b1031, the eighth part b1032 is arranged on the insulating substrate b102, the eighth part b1032 is symmetrically arranged along the first axis b101, the eighth part b1032 is connected to the seventh part b1031, and the eighth part b1032 is located on one side of the sixth metal layer b104.

[0221] It can be understood that since the first end of the second metal sheet b6 is respectively connected to the emitter ends of multiple third semiconductor switches b2, the second end of the second metal sheet b6 is respectively connected to the emitter ends of multiple second semiconductor switches b3, and the second metal sheet b6 is arranged on the seventh part b1031, and the eighth part b1032 is connected to the seventh part b1031, the emitter ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can be connected to the eighth part b1032 using the seventh part b1031 after being connected in parallel, and can be connected to other devices using the eighth part b1032. As a result, the seventh part b1031 and the eighth part b1032 of the first metal layer b103 can be connected to other devices as the current output ends of the bridge arm, thereby facilitating the realization of the unidirectional conduction or bidirectional conduction function of the bridge arm.

[0222] Among them, since the seventh part b1031 is symmetrically arranged along the first axis b101, and the eighth part b1032 is symmetrically arranged along the first axis b101, when the transmitting ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 are connected to other devices using the first metal layer b103, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 can be equal, thereby facilitating the realization of current sharing between each semiconductor switch, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among each semiconductor switch, thereby avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0223] Since the seventh part b1031 is located between the fifth part b1041 and the sixth part b1042, and the eighth part b1032 is located on one side of the sixth metal layer b104, the structure of the bridge arm is more compact and reasonable while ensuring current sharing between the semiconductor switches, thereby ensuring that the bridge arm has a smaller size to meet usage requirements.

[0224] It should be noted that the specific types of the seventh part b1031 and the eighth part b1032 can be set according to actual needs and are not limited to this. For example, the seventh part b1031 and the eighth part b1032 can both be layered metals that are nearly rectangular, and the sizes of the seventh part b1031 and the eighth part b1032 are much smaller than those of the fifth part b1041 and the sixth part b1042. At the same time, the length direction of the eighth part b1032 can be perpendicular to the axial direction of the first axis b101.

[0225] When the bridge arm is used in a power module, the eighth part b1032 can be used for direct current output or alternating current output.

[0226] On the one hand, current balancing between the third semiconductor switch b2 and the second semiconductor switch b3 can be achieved through the symmetry between the third semiconductor switch b2 and the second semiconductor switch b3, the symmetry between the first metal wire b4 and the second metal wire b5, the symmetry of the second metal sheet b6, the symmetry between the fifth portion b1041 and the sixth portion b1042, and the symmetry between the seventh portion b1031 and the eighth portion b1032. Other methods are also possible, and are not limited to these methods. On the other hand, current balancing between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 can be achieved by adjusting the current paths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3, thereby controlling the length of the current paths to achieve current balancing between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3. The current path adjustment method can be set according to actual needs and is not limited to this.

[0227] As shown in FIG. 7 , in some embodiments, an eighth notch b601 is provided on a side of the second metal sheet b6 away from the eighth portion b1032 or on a side close to the eighth portion b1032 .

[0228] It can be understood that, since the transmitting ends of the plurality of third semiconductor switches b2 are simultaneously connected to the first end of the second metal sheet b6, the transmitting ends of the plurality of second semiconductor switches b3 are simultaneously connected to the second end of the second metal sheet b6, and the seventh portion b1031 is connected to the second metal sheet b6, and the eighth portion b1032 is connected to the seventh portion b1031, when the eighth portion b1032 is used as the current output end of the bridge arm, the current path lengths between the seventh portion b1031 and the plurality of third semiconductor switches b2 are easily deviated and unequal, and the current path lengths between the seventh portion b1031 and the plurality of second semiconductor switches b3 are easily deviated and unequal, therefore, through the eighth gap b The setting of 601 can adjust the shape, size and other parameters of the second metal sheet b6, and then adjust the conduction path of the second metal sheet b6, so that the current path length between the seventh part b1031 and the multiple third semiconductor switches b2 can be kept equal, and the current path length between the seventh part b1031 and the multiple second semiconductor switches b3 can be kept equal, thereby achieving current sharing among the various semiconductor switches, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0229] It should be noted that the specific shape and size of the eighth notch b601 can be set according to actual needs and are not limited to this. For example, the eighth notch b601 can be a rectangular structure, and the eighth notch b601 is symmetrically arranged along the first axis b101.

[0230] As shown in Figure 8, in some embodiments, the bridge arm also includes a third metal row b7 and a fourth metal row b8, the third metal row b7 is arranged axially along the first axis b101, and the first end of the third metal row b7 is connected to the first metal layer b103, the fourth metal row b8 is arranged axially along the first axis b101, and the first end of the fourth metal row b8 is connected to the sixth metal layer b104.

[0231] It can be understood that since the first end of the third metal row b7 is connected to the first metal layer b103, the emitter ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can be connected in parallel and connected to other devices using the third metal row b7. At the same time, since the first end of the fourth metal row b8 is connected to the sixth metal layer b104, the collector ends of multiple third semiconductor switches b2 and multiple second semiconductor switches b3 can be connected in parallel and connected to other devices using the fourth metal row b8. As a result, the third metal row b7 and the fourth metal row b8 can be connected to other devices as the current output end and current input end of the bridge arm, respectively, thereby facilitating the realization of the unidirectional or bidirectional conductivity function of the bridge arm.

[0232] It should be noted that the specific types of the third metal bar b7 and the fourth metal bar b8 can be set according to actual needs and are not limited to this. For example, the third metal bar b7 and the fourth metal bar b8 can both be copper bars.

[0233] As shown in Figure 7, in some embodiments, the bridge arm includes three third semiconductor switches b2, three second semiconductor switches b3, three first metal wires b4 arranged at intervals, and three second metal wires b5 arranged at intervals. The three third semiconductor switches b2 are distributed axially along the first axis b101, and the three third semiconductor switches b2 are not aligned axially along the first axis b101. The three second semiconductor switches b3 are distributed axially along the first axis b101, and the three second semiconductor switches b3 are not aligned axially along the first axis b101. Each first metal wire b4 and each second metal wire b5 includes a first end, a second end, and a third end distributed axially along the first axis b101, wherein the transmitting ends of the three third semiconductor switches b2 are respectively connected to the first end, the second end, and the third end of each first metal wire b4, and the transmitting ends of the three second semiconductor switches b3 are respectively connected to the first end, the second end, and the third end of each first metal wire b4.

[0234] It can be understood that by setting up three third semiconductor switches b2 and three second semiconductor switches b3, the bridge arm can carry a larger current by utilizing the parallel connection of the three third semiconductor switches b2 and the three second semiconductor switches b3, thereby achieving high output power.

[0235] At the same time, because the emitters of the three third semiconductor switches b2 are simultaneously connected to each first metal wire b4, the three third semiconductor switches b2 form a common emitter. Therefore, when the three third semiconductor switches b2 are connected in parallel, the common emitter structure among the three third semiconductor switches b2 can be used to reduce differences in current paths between the semiconductor switches. Because the emitters of the three second semiconductor switches b3 are simultaneously connected to each first metal wire b4, the three second semiconductor switches b3 form a common emitter. Therefore, when the three second semiconductor switches b3 are connected in parallel, the common emitter structure among the three second semiconductor switches b3 can be used to reduce differences in current paths between the semiconductor switches. This makes it easier to equalize the current path lengths between the semiconductor switches, thereby achieving current sharing. This avoids differences in loss, current and voltage stress, and switching speed among the semiconductor switches, thereby preventing damage to individual semiconductor switches due to prolonged excessive stress or the inability to fully utilize the current capacity of each semiconductor switch.

[0236] It should be noted that, taking the third semiconductor switch b2 as an example, the transmitting ends of the three third semiconductor switches b2 are simultaneously connected to the first end of the second metal sheet b6, so that when the second metal sheet b6 is used as the current output end of the bridge arm, the current path lengths of the three third semiconductor switches b2 on the second metal sheet b6 are prone to deviation and inequality. Therefore, by setting the three third semiconductor switches b2 to be axially uneven along the first axis b101, the relative positions of the three third semiconductor switches b2 on the second metal sheet b6 can be adjusted, and then the conduction path on the second metal sheet b6 can be adjusted, so that the current path lengths of the three third semiconductor switches b2 on the second metal sheet b6 can be kept equal, thereby achieving current sharing between each semiconductor switch, thereby further avoiding the difference in loss, current and voltage stress, and switching speed between each semiconductor switch, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0237] The first metal wire b4 and the second metal wire b5 may both include a first arc-shaped wire and a second arc-shaped wire. Taking the third semiconductor switch b2 as an example, the first end of the first arc-shaped wire is connected to the emitter of the third semiconductor switch b2 located on one side, and the second end of the first arc-shaped wire is connected to the emitter of the third semiconductor switch b2 located in the middle. The first end of the second arc-shaped wire is connected to the emitter of the third semiconductor switch b2 located in the middle, and the second end of the second arc-shaped wire is connected to the emitter of the third semiconductor switch b2 located on the other side.

[0238] The distances between the three third semiconductor switches b2 and the first axis b101 and the distances between the three second semiconductor switches b3 and the first axis b101 can be set according to actual needs and are not limited thereto.

[0239] As shown in Figures 7, 8 and 9, the embodiment of the present application also proposes another half bridge, including a second upper bridge arm b9 and a second lower bridge arm b10, the second upper bridge arm b9 is a bridge arm as in the embodiment of the present application, and the second lower bridge arm b10 is a bridge arm as in the embodiment of the present application, wherein the emitter end of the third semiconductor switch b2 and the emitter end of the second semiconductor switch b3 of the second upper bridge arm b9 are connected to the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 of the second lower bridge arm b10.

[0240] It can be understood that since the first metal wire b4 is respectively connected to the emitter ends of multiple third semiconductor switches b2, a common emitter end is realized between the multiple third semiconductor switches b2, and since the second metal wire b5 is respectively connected to the emitter ends of multiple second semiconductor switches b3, a common emitter end is realized between the multiple second semiconductor switches b3. Therefore, when the multiple third semiconductor switches b2 are connected in parallel, the common emitter end structure between the multiple third semiconductor switches b2 and the common emitter end structure between the multiple second semiconductor switches b3 can be used to reduce the current path difference between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0241] Since the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, and the second metal wire b5 and the first metal wire b4 are symmetrically distributed along the first axis b101, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are equal, which is conducive to achieving current sharing and thereby improving the performance of the half bridge.

[0242] Since the emitter end of the third semiconductor switch b2 and the emitter end of the second semiconductor switch b3 of the second upper bridge arm b9 are connected to the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 of the second lower bridge arm b10, the third semiconductor switch b2 and the second semiconductor switch b3 of the second upper bridge arm b9 and the third semiconductor switch b2 and the second semiconductor switch b3 of the second lower bridge arm b10 form a half-bridge circuit, and the half-bridge circuit can be used to achieve DC to AC inversion.

[0243] It should be noted that the specific arrangement between the second upper bridge arm b9 and the second lower bridge arm b10 can be set according to actual needs and is not limited thereto.

[0244] In some embodiments, the fourth metal row b8 of the second upper bridge arm b9 and the third metal row b7 of the second lower bridge arm b10 are close to each other and arranged in parallel, and the current direction of the fourth metal row b8 of the second upper bridge arm b9 is opposite to the current direction of the third metal row b7 of the second lower bridge arm b10.

[0245] It can be understood that since the current direction of the fourth metal row b8 of the second upper bridge arm b9 is opposite to the current direction of the third metal row b7 of the second lower bridge arm b10, the fourth metal row b8 and the third metal row b7 can be mutually inductive, and the mutual inductance is then used to offset the parasitic inductance between the fourth metal row b8 and the third metal row b7, thereby effectively reducing the parasitic inductance of the half bridge and avoiding the generation of large spike voltages. There is no need to reduce the switching speed of multiple third semiconductor switches b2 and multiple second semiconductor switches b3, thereby ensuring that the bridge arm can fully utilize its high switching speed advantage.

[0246] It should be noted that the distance between the fourth metal row b8 of the second upper bridge arm b9 and the third metal row b7 of the second lower bridge arm b10 can be set according to actual needs and is not limited thereto.

[0247] The third metal row b7 of the second upper bridge arm b9 and the fourth metal row b8 of the second lower bridge arm b10 can be set separately or can be the same metal row, and there is no limitation on this. Among them, the first metal layer b103 of the second upper bridge arm b9 and the sixth metal layer b104 of the second lower bridge arm b10 share a metal row to reduce the material and volume of the half bridge.

[0248] The fourth metal bus b8 of the second upper bridge arm b9 can be used to connect the positive pole of direct current, the third metal bus b7 of the second lower bridge arm b10 can be used to connect the negative pole of direct current, and the third metal bus b7 of the second upper bridge arm b9 and the fourth metal bus b8 of the second lower bridge arm b10 can be used to output single-phase alternating current.

[0249] As shown in Figure 7, in some embodiments, the eighth notch b601 of the second upper bridge arm b9 is located on the side of the second metal sheet b6 of the second upper bridge arm b9 close to the second lower bridge arm b10, and the eighth notch b601 of the second lower bridge arm b10 is located on the side of the second metal sheet b6 of the second lower bridge arm b10 away from the second upper bridge arm b9, and the size of the eighth notch b601 of the second upper bridge arm b9 is different from the size of the eighth notch b601 of the second lower bridge arm b10.

[0250] It can be understood that, by setting the eighth notch b601 of the second upper bridge arm b9, the shape, size and other parameters of the second metal sheet b6 of the second upper bridge arm b9 can be adjusted, and then the conduction path of the second metal sheet b6 of the second upper bridge arm b9 can be adjusted, so that the current path lengths of the multiple third semiconductor switches b2 of the second upper bridge arm b9 on the second metal sheet b6 can be kept equal, thereby achieving current sharing between the various semiconductor switches in the second upper bridge arm b9. At the same time, by setting the eighth notch b601 of the second lower bridge arm b10, the shape of the second metal sheet b6 of the second lower bridge arm b10 can be adjusted. , size and other parameters, and then adjust the conduction path of the second metal sheet b6 of the second lower bridge arm b10, so that the current path lengths of the multiple third semiconductor switches b2 of the second lower bridge arm b10 on the second metal sheet b6 can be kept equal, thereby achieving current sharing among the semiconductor switches in the second lower bridge arm b10, thereby further avoiding the differences in losses, current and voltage stresses, and switching speeds among the semiconductor switches, and thus avoiding the problem of a single semiconductor switch being damaged due to long-term excessive stress or the problem that the current capacity of each semiconductor switch cannot be fully utilized.

[0251] As shown in Figure 7, in some embodiments, the insulating substrate b102 of the second upper bridge arm b9 is connected to the insulating substrate b102 of the second lower bridge arm b10, and the first metal layer b103 of the second upper bridge arm b9 is connected to the sixth metal layer b104 of the second lower bridge arm b10.

[0252] It can be understood that since the insulating substrate b102 of the second upper bridge arm b9 is connected to the insulating substrate b102 of the second lower bridge arm b10, and the first metal layer b103 of the second upper bridge arm b9 is connected to the sixth metal layer b104 of the second lower bridge arm b10, the second upper bridge arm b9 and the second lower bridge arm b10 can share an insulating substrate b102 and form an integral structure, and the first metal layer b103 of the second upper bridge arm b9 and the sixth metal layer b104 of the second lower bridge arm b10 can share a metal layer and form an integral structure. As a result, not only the second metal sheet b6 of the second upper bridge arm b9 is connected to the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 of the second lower bridge arm b10, but also the structural stability of the half bridge can be guaranteed, while reducing the material and volume of the half bridge, making the cost of the half bridge lower and more convenient to use.

[0253] As shown in FIG9 , in some embodiments, the half bridge further includes an encapsulated insulating layer b11, a first opening b12, a second opening b13, and a third opening b14. The encapsulated insulating layer b11 is disposed on the insulating substrate b102 of the second upper bridge arm b9 and the insulating substrate b102 of the second lower bridge arm b10, and the first metal layer b103, the sixth metal layer b104, the third semiconductor switch b2, the second semiconductor switch b3, and the second metal sheet b6 of the second upper bridge arm b9 and the second lower bridge arm b10 are all located in the encapsulated insulating layer b11. The first opening b12 is disposed in the encapsulated insulating layer b11 near the first metal layer b103 of the second upper bridge arm b9. The first opening b12 is symmetrically disposed along the first axis b101. The third metal layer b104 of the second upper bridge arm b9 and the sixth metal layer b104 of the second lower bridge arm b10 are all located in the encapsulated insulating layer b11. The row b7 passes through the first opening b12 and is connected to the first metal layer b103 of the second upper bridge arm b9. The second opening b13 is set at the sixth metal layer b104 of the second upper bridge arm b9 in the packaging insulation layer b11. The second opening b13 is symmetrically arranged along the first axis b101. The fourth metal row b8 of the second upper bridge arm b9 passes through the second opening b13 and is connected to the sixth metal layer b104 of the second upper bridge arm b9. The third opening b14 is set at the first metal layer b103 of the second lower bridge arm b10 in the packaging insulation layer b11. The third opening b14 is symmetrically arranged along the first axis b101. The third metal row b7 of the second lower bridge arm b10 passes through the third opening b14 and is connected to the first metal layer b103 of the second lower bridge arm b10.

[0254] It can be understood that since the first metal layer b103, the sixth metal layer b104, the third semiconductor switch b2, the second semiconductor switch b3 and the second metal sheet b6 are all located in the packaging insulation layer b11, the packaging insulation layer b11 can realize the packaging of the second upper bridge arm b9 and the second lower bridge arm b10, thereby preventing the half bridge from being interfered with by the external environment and improving the reliability of the half bridge. At the same time, the packaging insulation layer b11 can also insulate and protect the second upper bridge arm b9 and the second lower bridge arm b10, thereby avoiding the need to set additional insulating devices on the half bridge, thereby effectively reducing the cost of the half bridge and reducing the volume of the half bridge.

[0255] Among them, the setting of the first opening b12, the second opening b13 and the third opening b14 facilitates the setting of the third metal row b7 and the fourth metal row b8 on the second upper bridge arm b9 and the second lower bridge arm b10, so that the half bridge can be packaged and insulated while making it easy for the half bridge to be connected to external devices using the third metal row b7 and the fourth metal row b8, making the use of the half bridge more convenient.

[0256] It should be noted that the sizes of the first opening b12 , the second opening b13 and the third opening b14 can be set according to actual needs and are not limited thereto.

[0257] The specific types of the first opening b12, the second opening b13 and the third opening b14 can be set according to actual needs and are not limited to this. For example, the first opening b12, the second opening b13 and the third opening b14 each include two openings, so that two symmetrical connection points can be set between the third metal row b7 of the second upper bridge arm b9 and the first metal layer b103 of the second upper bridge arm b9, between the second metal of the second upper bridge arm b9 and the sixth metal layer b104 of the second upper bridge arm b9, and between the third metal row b7 of the second lower bridge arm b10 and the first metal layer b103 of the second lower bridge arm b10.

[0258] As shown in Figures 7 and 9, in some embodiments, a first hot melt area b15 is provided on the first metal layer b103 of the second upper bridge arm b9 at the first opening b12, and the first hot melt area b15 is symmetrically arranged along the first axis b101. The third metal row b7 of the second upper bridge arm b9 passes through the first opening b12 and is connected to the first hot melt area b15. A second hot melt area b16 is provided on the sixth metal layer b104 of the second upper bridge arm b9 at the second opening b13, and the second hot melt area b16 is symmetrically arranged along the first axis b101. The fourth metal row b8 of the second upper bridge arm b9 passes through the second opening b13 and is connected to the second hot melt area b16. A third hot melt area b17 is provided on the first metal layer b103 of the second lower bridge arm b10 at the third opening b14, and the third hot melt area b17 is symmetrically arranged along the first axis b101. The third metal row b7 of the second lower bridge arm b10 passes through the third opening b14 and is connected to the third hot melt area b17.

[0259] It can be understood that, by setting the first hot melt area b15, the third metal row b7 of the second upper bridge arm b9 and the first metal layer b103 of the second upper bridge arm b9 can be welded, by setting the second hot melt area b16, the fourth metal row b8 of the second upper bridge arm b9 and the first metal layer b103 of the second upper bridge arm b9 can be welded, and by setting the third hot melt area b17, the third metal row b7 of the second lower bridge arm b10 and the first metal layer b103 of the second lower bridge arm b10 can be welded, thereby avoiding the problem of the half bridge being too large due to bolt connection, and at the same time ensuring the reliable operation of the half bridge.

[0260] The embodiment of the present application further provides a power module, comprising a half-bridge as in the embodiment of the present application.

[0261] It can be understood that since the first metal wire b4 is respectively connected to the emitter ends of multiple third semiconductor switches b2, a common emitter end is realized between the multiple third semiconductor switches b2, and since the second metal wire b5 is respectively connected to the emitter ends of multiple second semiconductor switches b3, a common emitter end is realized between the multiple second semiconductor switches b3. Therefore, when the multiple third semiconductor switches b2 are connected in parallel, the common emitter end structure between the multiple third semiconductor switches b2 and the common emitter end structure between the multiple second semiconductor switches b3 can be used to reduce the current path difference between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0262] Since the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, and the second metal wire b5 and the first metal wire b4 are symmetrically distributed along the first axis b101, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are equal, which is conducive to achieving current sharing and thereby improving the performance of the power module.

[0263] Since the emitter end of the third semiconductor switch b2 and the emitter end of the second semiconductor switch b3 of the second upper bridge arm b9 are connected to the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 of the second lower bridge arm b10, the third semiconductor switch b2 and the second semiconductor switch b3 of the second upper bridge arm b9 and the third semiconductor switch b2 and the second semiconductor switch b3 of the second lower bridge arm b10 form a half-bridge circuit, and the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0264] It should be noted that the specific type of the power module can be set according to actual needs and is not limited to this. For example, the power module may include three half bridges, and the power output by the three half bridges constitutes a three-phase alternating current.

[0265] An embodiment of the present application further provides a vehicle, comprising a power module according to an embodiment of the present application.

[0266] It can be understood that since the first metal wire b4 is respectively connected to the emitter ends of multiple third semiconductor switches b2, a common emitter end is realized between the multiple third semiconductor switches b2, and since the second metal wire b5 is respectively connected to the emitter ends of multiple second semiconductor switches b3, a common emitter end is realized between the multiple second semiconductor switches b3. Therefore, when the multiple third semiconductor switches b2 are connected in parallel, the common emitter end structure between the multiple third semiconductor switches b2 and the common emitter end structure between the multiple second semiconductor switches b3 can be used to reduce the current path difference between the semiconductor switches, thereby facilitating the equalization of the current path lengths between the semiconductor switches, thereby achieving current sharing, thereby avoiding the difference in loss, current and voltage stress, and switching speed between the semiconductor switches, thereby avoiding the problem of a single semiconductor switch being damaged due to excessive stress for a long time or the problem of the current capacity of each semiconductor switch not being able to be fully utilized.

[0267] Since the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are symmetrically distributed along the first axis b101, and the second metal wire b5 and the first metal wire b4 are symmetrically distributed along the first axis b101, the current path lengths between the multiple third semiconductor switches b2 and the multiple second semiconductor switches b3 are equal, which is conducive to achieving current sharing and thereby improving the performance of the power module.

[0268] Since the emitter end of the third semiconductor switch b2 and the emitter end of the second semiconductor switch b3 of the second upper bridge arm b9 are connected to the collector end of the third semiconductor switch b2 and the collector end of the second semiconductor switch b3 of the second lower bridge arm b10, the third semiconductor switch b2 and the second semiconductor switch b3 of the second upper bridge arm b9 and the third semiconductor switch b2 and the second semiconductor switch b3 of the second lower bridge arm b10 form a half-bridge circuit, and the half-bridge circuit can realize the DC to AC inversion function of the power module.

[0269] It should be noted that the specific type of vehicle can be set according to actual needs and is not limited to this. For example, the vehicle can be an electric vehicle, a fuel vehicle, etc.

[0270] In this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprises" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or apparatus that includes a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article or apparatus. In the absence of further limitations, an element defined by the phrase "comprises a ..." does not exclude the presence of additional identical elements in the process, method, article or apparatus that includes the element.

Claims

1. A bridge arm, characterized in that: include: a plurality of first semiconductor switches; A plurality of second semiconductor switches, wherein the plurality of first semiconductor switches and the plurality of second semiconductor switches are symmetrically distributed along a symmetry axis; A first metal sheet, wherein the first end and the second end of the first metal sheet are symmetrically distributed along the symmetry axis, and the third end of the first metal sheet is located on the symmetry axis, the first end of the first metal sheet is respectively connected to the emission ends of the plurality of the first semiconductor switches, and the second end of the first metal sheet is respectively connected to the emission ends of the plurality of the second semiconductor switches.

2. The bridge arm according to claim 1, characterized in that: The bridge arm also includes: A first metal layer, wherein the first metal layer is symmetrically distributed along the symmetry axis; a second metal layer, wherein the second metal layer is symmetrically distributed along the symmetry axis, the first semiconductor switch and the second semiconductor switch are respectively arranged on the second metal layer, and the collector end of the first semiconductor switch and the collector end of the first semiconductor switch are respectively connected to the second metal layer; The second metal layer is provided with a first avoidance opening at the symmetry axis, one end of the first metal layer extends into the first avoidance opening and is connected to the third end of the first metal sheet, and a first gap is provided between the first metal layer and the second metal layer.

3. The bridge arm according to claim 2, characterized in that: The second metal layer comprises: a first part, the first semiconductor switch is arranged on the first part, and a collector end of the first semiconductor switch is connected to the first part; a second part, wherein the second semiconductor switch is arranged on the second part, and a collector end of the second semiconductor switch is connected to the second part; The first part and the second part are symmetrically distributed along the symmetry axis, and the first avoidance opening is formed between the first part and the second part.

4. The bridge arm according to claim 3, characterized in that: The first metal layer comprises: a third part, the third part is symmetrically distributed along the symmetry axis, the third part is arranged in the first avoidance opening and connected to the third end of the first metal sheet; The fourth part is symmetrically distributed along the symmetry axis, the fourth part is connected to the third part, and the fourth part is located on one side of the second metal layer.

5. The bridge arm according to claim 2, characterized in that: A second avoidance opening is provided at one end of the second metal layer away from the second semiconductor switch, and a third avoidance opening is provided at one end of the second metal layer away from the first semiconductor switch; The bridge arm also includes: a third metal layer and a fourth metal layer, the third metal layer is arranged in the second avoidance, and a second gap is arranged between the third metal layer and the second metal layer, the third metal layer is respectively connected to the control ends of multiple first semiconductor switches, the fourth metal layer is arranged in the third avoidance, and a third gap is arranged between the fourth metal layer and the second metal layer, and the fourth metal layer is respectively connected to the control ends of multiple second semiconductor switches.

6. The bridge arm according to claim 5, characterized in that: The bridge arm also includes: A first pin is disposed at an end of the third metal layer away from the second metal layer. The first pin is connected to the third metal layer; A second pin, the second pin is arranged at an end of the fourth metal layer away from the second metal layer, and the second pin is connected to the fourth metal layer; Wherein, the first pin and the second pin are symmetrically distributed along the symmetry axis.

7. The bridge arm according to claim 6, characterized in that: The bridge arm also includes: a plurality of first binding wires, wherein the first binding wires are arranged in a direction perpendicular to the symmetry axis, a first end of the first binding wire is connected to the third metal layer, and a second end of the first binding wire is connected to a control end of the first semiconductor switch; a plurality of second binding wires, wherein the second binding wires are arranged in a direction perpendicular to the symmetry axis, a first end of the second binding wire is connected to the fourth metal layer, and a second end of the second binding wire is connected to a control end of the second semiconductor switch; A third wire, the third wire is arranged in a direction perpendicular to the symmetry axis, a first end of the third wire is connected to the third metal layer, and a second end of the third wire is connected to the first pin; A fourth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the fourth wire is connected to the fourth metal layer, and a second end of the fourth wire is connected to the second pin.

8. The bridge arm according to claim 5, characterized in that: The bridge arm also includes: An insulating substrate is symmetrically distributed along the symmetry axis, and the first metal layer, the second metal layer, the third metal layer and the fourth metal layer are respectively arranged on the insulating substrate.

9. The bridge arm according to claim 2, characterized in that: The bridge arm also includes: A third pin, the third pin is arranged at an end of the second metal layer away from the second semiconductor switch, and the third pin is connected to the transmitting end of the first semiconductor switch; a fourth pin, the fourth pin being arranged at an end of the second metal layer away from the first semiconductor switch, and the fourth pin being connected to a transmitting end of the second semiconductor switch; Wherein, the third pin and the fourth pin are symmetrically distributed along the symmetry axis.

10. The bridge arm according to claim 9, characterized in that: The bridge arm also includes: a fifth wire, wherein the fifth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the fifth wire is connected to the emitter end of the first semiconductor switch, and a second end of the fifth wire is connected to the third pin; A sixth wire is arranged in a direction perpendicular to the symmetry axis, a first end of the sixth wire is connected to the emitter end of the second semiconductor switch, and a second end of the sixth wire is connected to the fourth pin.

11. The bridge arm according to claim 2, characterized in that: The plurality of first semiconductor switches include: a first switch, wherein the first switch is disposed on the second metal layer, a collector end of the first switch is connected to the second metal layer, and a transmitter end of the first switch is connected to a first end of the first metal sheet; a second switch, wherein the second switch is disposed on the second metal layer, a collector end of the second switch is connected to the second metal layer, and a transmitter end of the second switch is connected to the first end of the first metal sheet; a third switch, wherein the third switch is disposed on the second metal layer, a collector end of the third switch is connected to the second metal layer, and a transmitter end of the third switch is connected to the first end of the first metal sheet; The first switch, the second switch and the third switch are not aligned along the axial direction of the symmetry axis.

12. The bridge arm according to claim 11, characterized in that: The first end of the first metal sheet comprises: A first connecting piece, wherein the first connecting piece is connected to a transmitting end of the first switch; a second connecting piece, wherein the second connecting piece is connected to a transmitting end of the second switch; a third connecting piece connected to a transmitting end of the third switch; Wherein, a first gap is formed between the first connecting piece and the second connecting piece, and a second gap is formed between the second connecting piece and the third connecting piece.

13. The bridge arm according to claim 12, characterized in that: The distance between the first switch and the axis of symmetry is greater than the distance between the second switch and the axis of symmetry, and the distance between the second switch and the axis of symmetry is greater than the distance between the third switch and the axis of symmetry; A third notch is provided on a side of the first metal sheet close to the first switch, a fourth notch is provided inside the third notch, and the third notch and the fourth notch are symmetrically distributed along the symmetry axis; The distance between the first notch and the symmetry axis is greater than the distance between the second notch and the symmetry axis.

14. The bridge arm according to claim 12, characterized in that: The bridge arm also includes: A first metal row, the first metal row is arranged along the axial direction of the symmetry axis, and a first end of the first metal row is connected to the first metal layer; A second metal row, wherein the second metal row is arranged along the axial direction of the symmetry axis, and a first end of the second metal row is connected to the second metal layer.

15. The bridge arm according to claim 14, characterized in that: The first metal sheet has an orthographic projection on the first metal row and / or the second metal row; The distance between the first switch and the axis of symmetry is smaller than the distance between the third switch and the axis of symmetry, and the distance between the third switch and the axis of symmetry is smaller than the distance between the second switch and the axis of symmetry; A fifth notch is provided on a side of the first metal sheet close to the first switch, a sixth notch is provided on a side of the first metal sheet close to the third switch, a seventh notch is provided inside the sixth notch, and the fifth notch, the sixth notch and the seventh notch are symmetrically distributed along the symmetry axis; The distance between the first notch and the axis of symmetry is equal to the distance between the second notch and the axis of symmetry.

16. The bridge arm according to claim 1, characterized in that: The first metal sheet comprises: A first planar sheet, a second planar sheet, a third planar sheet, a first arc-shaped sheet and a second arc-shaped sheet, the first planar sheet is respectively connected to the transmitting ends of the plurality of first semiconductor switches, the second planar sheet is respectively connected to the transmitting ends of the plurality of second semiconductor switches, the first planar sheet and the second planar sheet are symmetrically distributed along the symmetry axis, the third planar sheet is located on the symmetry axis, the first arc-shaped sheet is arranged between the third planar sheet and the first planar sheet, the second arc-shaped sheet is arranged between the third planar sheet and the second planar sheet, and the first arc-shaped sheet and the second arc-shaped sheet are symmetrically distributed along the symmetry axis.

17. A half bridge, characterized in that: include: A first upper bridge arm, wherein the first upper bridge arm is a bridge arm as claimed in any one of claims 1 to 16; A first lower bridge arm, wherein the first lower bridge arm is a bridge arm as claimed in any one of claims 1 to 16; The first metal sheet of the first upper bridge arm is connected to the first semiconductor switch collector terminal and the second semiconductor switch collector terminal of the first lower bridge arm respectively.

18. The half bridge according to claim 17, characterized in that The second metal row of the first upper bridge arm and the first metal row of the first lower bridge arm are arranged close to each other and in parallel, and a current direction of the second metal row of the first upper bridge arm is opposite to a current direction of the first metal row of the first lower bridge arm.

19. The half bridge according to claim 17, characterized in that The fourth notch of the first upper bridge arm is arranged opposite to the seventh notch of the first lower bridge arm, and a size of the fourth notch of the first upper bridge arm is different from a size of the seventh notch of the first lower bridge arm.

20. The half bridge according to claim 17, characterized in that The insulating substrate of the first upper bridge arm is connected to the insulating substrate of the first lower bridge arm, and the first metal layer of the first upper bridge arm is connected to the second metal layer of the first lower bridge arm.

21. A bridge arm, characterized in that: include: substrate; a plurality of third semiconductor switches, wherein the third semiconductor switches are disposed on the substrate; a plurality of fourth semiconductor switches, wherein the fourth semiconductor switches are arranged on the substrate, and the plurality of third semiconductor switches and the plurality of fourth semiconductor switches are symmetrically distributed along the first axis; a first metal wire, wherein the first metal wire is respectively connected to the emitter ends of the plurality of third semiconductor switches; A second metal wire, wherein the second metal wire is respectively connected to the emitter ends of the plurality of fourth semiconductor switches, and the second metal wire and the first metal wire are symmetrically distributed along the first axis.

22. The bridge arm according to claim 21, characterized in that: The bridge arm also includes: The second metal sheet is symmetrically arranged along the first axis, and the first end of the second metal sheet is respectively connected to the transmitting ends of the plurality of the third semiconductor switches, and the second end of the second metal sheet is respectively connected to the transmitting ends of the plurality of the fourth semiconductor switches.

23. The bridge arm according to claim 22, characterized in that: The substrate comprises: Insulating substrate; a fifth metal layer, wherein the fifth metal layer is disposed on the insulating substrate and the fifth metal layer is symmetrically disposed along the first axis, and the second metal sheet is disposed on the fifth metal layer; A sixth metal layer, wherein the sixth metal layer is arranged on the insulating substrate, and the sixth metal layer is symmetrically arranged along the first axis, the third semiconductor switch and the fourth semiconductor switch are respectively arranged on the sixth metal layer, and the collector end of the third semiconductor switch and the collector end of the third semiconductor switch are respectively connected to the sixth metal layer.

24. The bridge arm according to claim 23, characterized in that: The sixth metal layer comprises: a fifth part, wherein the fifth part is arranged on the insulating substrate, the third semiconductor switch is arranged on the fifth part, and a collector end of the third semiconductor switch is connected to the fifth part; a sixth part, wherein the sixth part is arranged on the insulating substrate, the fourth semiconductor switch is arranged on the sixth part, and a collector end of the fourth semiconductor switch is connected to the sixth part; Wherein, the fifth part and the sixth part are symmetrically distributed along the first axis.

25. The bridge arm according to claim 24, characterized in that: The fifth metal layer comprises: a seventh portion, the seventh portion being arranged on the insulating substrate, the seventh portion being symmetrically arranged along the first axis, the seventh portion being located between the fifth portion and the sixth portion, and the second metal sheet being arranged on the seventh portion; An eighth part, wherein the eighth part is arranged on the insulating substrate, the eighth part is symmetrically arranged along the first axis, the eighth part is connected to the seventh part, and the eighth part is located on one side of the sixth metal layer.

26. The bridge arm according to claim 25, characterized in that: An eighth notch is provided on a side of the second metal sheet away from the eighth portion or on a side close to the eighth portion.

27. The bridge arm according to claim 23, characterized in that: The bridge arm also includes: a third metal row, the third metal row being arranged axially along the first axis, and a first end of the third metal row being connected to the fifth metal layer; A fourth metal row, wherein the fourth metal row is arranged axially along the first axis, and a first end of the fourth metal row is connected to the sixth metal layer.

28. The bridge arm according to any one of claims 21 to 27, characterized in that: The bridge arm comprises: three third semiconductor switches, the three third semiconductor switches are distributed at intervals along the axial direction of the first axis, and the three third semiconductor switches are not aligned along the axial direction of the first axis; three fourth semiconductor switches, the three fourth semiconductor switches are distributed at intervals along the axial direction of the first axis, and the three fourth semiconductor switches are not aligned along the axial direction of the first axis; Three first metal wires arranged at intervals and three second metal wires arranged at intervals, each of the first metal wires and each of the second metal wires comprising: a first end, a second end and a third end axially distributed along the first axis; Among them, the transmitting ends of the three third semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal line, and the transmitting ends of the three fourth semiconductor switches are respectively connected to the first end, the second end and the third end of each first metal line.

29. A half bridge, characterized in that: include: A second upper bridge arm, wherein the second upper bridge arm is a bridge arm as claimed in any one of claims 21 to 28; A second lower bridge arm, wherein the second lower bridge arm is a bridge arm as claimed in any one of claims 21 to 28; The third semiconductor switch emitter terminal and the fourth semiconductor switch emitter terminal of the second upper bridge arm are connected to the third semiconductor switch collector terminal and the fourth semiconductor switch collector terminal of the second lower bridge arm.

30. The half bridge according to claim 29, characterized in that The fourth metal row of the second upper bridge arm and the third metal row of the second lower bridge arm are arranged close to each other and in parallel, and the current direction of the fourth metal row of the second upper bridge arm is opposite to the current direction of the third metal row of the second lower bridge arm.

31. The half bridge according to claim 29, characterized in that The eighth notch of the second upper bridge arm is located on a side of the second metal sheet of the second upper bridge arm close to the second lower bridge arm, and the eighth notch of the second lower bridge arm is located on a side of the second metal sheet of the second lower bridge arm away from the second upper bridge arm, and a size of the eighth notch of the second upper bridge arm is different from a size of the eighth notch of the second lower bridge arm.

32. The half bridge according to claim 29, characterized in that The insulating substrate of the second upper bridge arm is connected to the insulating substrate of the second lower bridge arm, and the fifth metal layer of the second upper bridge arm is connected to the sixth metal layer of the second lower bridge arm.

33. The half bridge according to claim 32, characterized in that The half bridge further comprises: an encapsulation insulating layer, wherein the encapsulation insulating layer is disposed on the insulating substrate of the second upper bridge arm and the insulating substrate of the second lower bridge arm, and the fifth metal layer, the sixth metal layer, the third semiconductor switch, the fourth semiconductor switch and the second metal sheet of the second upper bridge arm and the second lower bridge arm are all located in the encapsulation insulating layer; The first opening is arranged at the fifth metal layer of the packaging insulation layer close to the second upper bridge arm, the first opening is symmetrically arranged along the first axis, and the third metal row of the second upper bridge arm passes through the first opening. The port is then connected to the fifth metal layer of the second upper bridge arm; a second opening, wherein the second opening is arranged at the packaging insulation layer near the sixth metal layer of the second upper bridge arm, the second opening is symmetrically arranged along the first axis, and the fourth metal row of the second upper bridge arm is connected to the sixth metal layer of the second upper bridge arm after passing through the second opening; The third opening is arranged on the packaging insulation layer near the fifth metal layer of the second lower bridge arm, and the third opening is symmetrically arranged along the first axis. The third metal row of the second lower bridge arm passes through the third opening and is connected to the fifth metal layer of the second lower bridge arm.

34. The half bridge according to claim 33, characterized in that A first hot-melt region is disposed on the fifth metal layer of the second upper bridge arm at the first opening, the first hot-melt region is symmetrically disposed along the first axis, and the third metal row of the second upper bridge arm is connected to the first hot-melt region after passing through the first opening; A second hot-melt region is disposed on the sixth metal layer of the second upper bridge arm at the second opening, the second hot-melt region is symmetrically disposed along the first axis, and the fourth metal row of the second upper bridge arm is connected to the second hot-melt region after passing through the second opening; A third hot-melt area is arranged on the fifth metal layer of the second lower bridge arm at the third opening. The third hot-melt area is symmetrically arranged along the first axis. The third metal row of the second lower bridge arm passes through the third opening and is connected to the third hot-melt area.

35. A power module, characterized in that: include: A half bridge as claimed in any one of claims 17 to 20, 29 to 34.

36. A vehicle, characterized in that: include: A power module as claimed in claim 35.

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