Core / shell structure material and ceramic member for semiconductor manufacturing apparatus using same

Abstract

The present invention relates to a core / shell structure material capable of providing high volume resistance and thermal conductivity while providing improved plasma resistance and durability against physical and / or chemical attacks caused in a plasma process environment without a separate coating for improving plasma resistance and to a ceramic member for a semiconductor manufacturing device using same. The present invention provides a ceramic member for a semiconductor manufacturing device, the ceramic member comprising: a core including an aluminum compound; and a shell at least partially surrounding the core and including a plasma-resistant metal or ceramic compound, wherein the core and the shell have a shape composed of particles, and the ceramic member is a sintered body formed by sintering the core / shell structure material, and has a structure in which particle phases constituting the shell form a continuous phase along an interface of the core particle phases.

Description

Core / shell structure material and ceramic member for semiconductor manufacturing device using the same

[0001] This application claims the benefit of priority to Korean Patent Application No. 10-2023-0085173, filed June 30, 2023, and Korean Patent Application No. 10-2024-0083991, filed June 26, 2024, the entire contents of which are incorporated herein by reference.

[0002] The present invention relates to a core / shell structured ceramic material and a ceramic member for a semiconductor manufacturing device using the same, and more particularly, to a core / shell structured ceramic material which is synthesized by coating a metal or ceramic compound having excellent plasma resistance characteristics on the surface of a ceramic powder, and by using the same to manufacture a ceramic member for a semiconductor manufacturing device such as an electrostatic chuck (ESC), a ceramic heater, etc., thereby having excellent plasma resistance and durability without a separate protective coating for improving plasma resistance, and at the same time having high thermal conductivity and volume resistivity, excellent hardness and density, and to a core / shell structured material and a ceramic member for a semiconductor manufacturing device using the same.

[0003] Improving product yield in semiconductor manufacturing has long been a key concern for the semiconductor industry. In particular, with the recent advancements in semiconductor technology, such as miniaturization of line widths and increased integration, particle generation has emerged as a significant issue affecting yield improvement. Reducing the generation of these contaminants in the chamber where plasma processing is performed has become a crucial topic.

[0004] In semiconductor manufacturing, it is necessary to create a plasma environment within a vacuum chamber to perform processes such as etching and chemical vapor deposition (CVD). This requires high electric and magnetic fields, as well as halogen-based gases, as well as oxygen and other gases.

[0005] These gases are decomposed and activated by the plasma discharge, generating highly reactive radicals and cations that induce chemical reactions with the ceramic material. Simultaneously, these charged cations are accelerated by the applied voltage, colliding with chamber components with kinetic energy and causing physical etching.

[0006] Chemical reactions and physical etching in such plasma environments cause corrosion and erosion of chamber component surfaces exposed to the plasma, which in turn causes particle release from the chamber component surfaces into the chamber, contributing to wafer-level contamination and ultimately leading to yield loss in semiconductor devices.

[0007] Therefore, plasma-resistant ceramic materials are used as materials for these chamber components. These ceramic materials exhibit low etch rates in a given plasma environment, emit minimal etch byproducts into the chamber, and generate minimal contaminant particles. Oxide materials are widely used as these plasma-resistant ceramic materials.

[0008] Alumina (Al2O3) is a representative plasma-resistant material, but recently, materials including yttria (Y2O3) have been widely used. In addition, specific ceramic materials are used for specific functionalities, such as aluminum nitride (AlN) for thermal conductivity and silicon carbide (SiC) for electrical conductivity.

[0009] Meanwhile, plasma-based materials are used as sintered products or as coatings on sintered bodies (coated products). The most common form, sintered products, is manufactured by molding raw powder and sintering the resulting product, which is then processed appropriately, in the same way as conventional ceramic component manufacturing.

[0010] On the other hand, in the case of coated products, the amount of raw materials used is significantly less than that of sintered products, and the products are made by coating various base materials such as anodized aluminum or sintered alumina with a thickness of several hundred micrometers or less.

[0011] Yttria is currently recognized as one of the materials with excellent plasma resistance. However, dense sintering is difficult, and its reliance on imported raw materials makes it expensive. Therefore, despite its excellent plasma resistance, it is primarily used for coatings rather than bulk sintered bodies.

[0012] In particular, in the case of electrostatic chucks (ESCs) or ceramic heaters, in addition to excellent plasma resistance characteristics, high volume resistivity and thermal conductivity are required, so there are limitations in using yttria bulk sintered bodies as base materials for electrostatic chucks or ceramic heaters.

[0013] Therefore, rather than manufacturing the base substrate of an electrostatic chuck or ceramic heater using a bulk sintered yttria body, various attempts are being made to coat yttria on existing alumina or aluminum nitride base substrates.

[0014] However, alumina and aluminum nitride, which were previously used as base materials for electrostatic chucks or ceramic heaters, and yttria, a coating material, have differences in thermal properties, such as coefficients of thermal expansion, which can lead to cracks and pores forming between them. This leads to frequent peeling and damage of the coating film, and a short service life, requiring recoating before use. Furthermore, with the recent increase in plasma power, contamination by yttria particles has become a problem, and a solution is also needed.

[0015] To solve this problem, YAG (Yttrium Aluminum Garnet, Y3Al5O) is a ceramic material that is a compound of yttria and alumina and has high thermal stability, creep resistance, optical properties, and plasma resistance. 12 ) are being used as a coating material.

[0016] However, the development of these coating materials alone does not address the fundamental problems associated with the differences in physical properties between the base material and the coating material, as well as the difficulty in forming a tight bond. Furthermore, the requirement for a separate, additional process for forming the coating layer complicates the manufacturing process, making it difficult to streamline the process and ultimately increasing manufacturing costs.

[0017] Accordingly, there is a need to develop a novel bulk sintered material that not only has excellent plasma resistance and durability without a separate coating layer to improve the plasma resistance and durability as in the past, but also has high volume resistivity and thermal conductivity required in electrostatic chucks or ceramic heaters, and a ceramic member for semiconductor manufacturing devices using the same.

[0018] [Prior Art Literature]

[0019] [Patent Document]

[0020] (Patent Document 1) Republic of Korea Patent No. 10-0864205 (Processing chamber having a component with yttrium-aluminum coating)

[0021] (Patent Document 2) Republic of Korea Patent No. 10-1107542 (Yttria-containing coating for plasma reactor)

[0022] (Patent Document 3) Republic of Korea Patent No. 10-0899292 (Electrostatic chuck for semiconductor equipment with insulating film that extends lifespan)

[0023] (Patent Document 4) Republic of Korea Publication Patent No. 10-2013-0090303 (Plasma spray coating material for manufacturing electrostatic chuck and manufacturing method thereof)

[0024] Accordingly, the present invention provides a core / shell structure material and a ceramic member for a semiconductor manufacturing device using the same, which can provide improved plasma resistance and durability against physical and / or chemical attacks caused in a plasma process environment without a separate coating for improving plasma resistance, while also providing high volume resistivity and thermal conductivity. The ceramic member can satisfy the properties required for an electrostatic chuck (ESC) or a ceramic heater, while reducing the level of contamination with metals and particles.

[0025] An exemplary embodiment of a core / shell structural material according to the present invention may be composed of a core comprising an aluminum compound and a shell comprising a plasma-resistant metal or ceramic compound at least partially surrounding the core.

[0026] In a preferred embodiment, the core may be made of aluminum nitride (AlN) or alumina (Al2O3), and the shell may be formed of yttrium aluminum garnet (YAG).

[0027] In another embodiment, the core may be formed of alumina (Al2O3) or aluminum nitride (AlN), and the shell may be formed of yttria (Y2O3) or magnesium oxide (MgO).

[0028] An exemplary embodiment of a ceramic member for a semiconductor manufacturing device according to the present invention can be formed by sintering the core / shell structure material, and the sintering can include sintering by a hot press process.

[0029] In a preferred embodiment, the ceramic member for the semiconductor manufacturing device may be formed by sintering the alumina-YAG core / shell structure material or the aluminum nitride-YAG core / shell structure material, and during the sintering process, the alumina core particles or the aluminum nitride core particles may be embedded between the YAG shell particles, such that a continuous YAG phase may be formed along the grain boundary of the alumina or aluminum nitride phase.

[0030] In another embodiment, the ceramic member for the semiconductor manufacturing device may be formed by sintering the alumina-yttria core / shell structure material or the aluminum nitride-yttria core / shell structure material, wherein during the sintering process, all or at least a portion of the yttria shell particles are converted into YAG through reaction sintering between the alumina core particles or the aluminum nitride core particles and the yttria shell particles, and thus the alumina core particles or the aluminum nitride core particles may be embedded between the converted YAG particles, such that a continuous YAG phase may be formed along the interface of the alumina or aluminum nitride phase.

[0031] In addition, the ceramic member for the semiconductor manufacturing device may be formed by sintering the alumina-magnesium oxide core / shell structure material or the aluminum nitride-magnesium oxide core / shell structure material. In this case, when the ceramic member for the semiconductor manufacturing device is formed by sintering the alumina-magnesium oxide core / shell structure material or the aluminum nitride-magnesium oxide core / shell structure material, in the sintering process, all or at least a portion of the magnesium oxide shell particles are converted into magnesium aluminate spinel (MgAl2O4, hereinafter referred to as “spinel”) by reaction sintering between the alumina core particles or the aluminum nitride core particles and the magnesium oxide shell particles, and accordingly, the alumina core particles or the aluminum nitride core particles may be embedded between the spinel particles, and a continuous spinel phase may be formed along the interface of the alumina or aluminum nitride phase.

[0032] The core / shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same are manufactured by using the core / shell structure material to form a continuous YAG phase or spinel (MgAl2O4) phase along the grain boundary of an alumina or aluminum nitride phase, thereby reducing interface defects at the alumina or aluminum nitride interface and providing a ceramic member having excellent plasma resistance and durability.

[0033] At this time, not only can the plasma resistance be improved by controlling the thickness and additives of the shell forming the YAG phase or spinel phase, but there is also an advantage in that the volume resistivity and thermal conductivity can be controlled to be equivalent to those of existing Al2O3 and AlN electrostatic chucks.

[0034] In addition, the core / shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same have high strength / hardness and density, and thus have the advantage of minimizing corrosion and erosion characteristics and particle and / or metal contamination in the extreme environment of a semiconductor process.

[0035] In particular, the ceramic member according to the present invention has excellent plasma resistance and durability as described above, and at the same time, has high volume resistance and thermal conductivity required when manufacturing an electrostatic chuck (ESC) or a ceramic heater, so that it has the advantage of being able to manufacture an electrostatic chuck and a ceramic heater with excellent performance without a separate plasma-resistant coating layer.

[0036] In addition, the ceramic member according to the present invention has the advantage of reducing the amount of expensive yttria used by using a core / shell structured ceramic material, and simplifying the manufacturing process and reducing manufacturing costs by eliminating the need to form a separate plasma-resistant coating layer.

[0037] Figure 1 is a cross-sectional view of a core / shell structure material particle according to the present invention.

[0038] FIG. 2 is an exemplary cross-sectional view of the internal structure of a ceramic member for a semiconductor manufacturing device using a core / shell structure material according to the present invention.

[0039] FIG. 3 is an XRD graph of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention.

[0040] Figure 4 is an XRD graph of a ceramic component for a typical semiconductor manufacturing device.

[0041] FIG. 5 is an image of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention observed using a transmission electron microscope (TEM).

[0042] FIG. 6 is an image of a cross-section of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention observed using a scanning electron microscope (SEM).

[0043] Figure 7 is an image of a cross-section of a ceramic member for a typical semiconductor manufacturing device observed using a scanning electron microscope.

[0044] Hereinafter, the present invention will be described in detail with reference to embodiments thereof so that those skilled in the art can easily implement the invention. However, it should be understood that the present invention is not limited to the specific embodiments described herein and can be implemented in various different forms.

[0045] In the present invention, the term "yttrium-aluminum oxide" means Y3Al5O 12 (YAG), YAlO3 (YAlO2), Y4Al2O9 (YAM), and combinations thereof. The terms "YAG" and "YAG phase" are used interchangeably in the present invention.

[0046] As used herein, the term "alumina" should be understood to be aluminum oxide comprising Al2O3, the term "yttria" should be understood to be yttrium oxide comprising Y2O3, and the term "spinel" should be understood to be magnesium aluminate spinel comprising MgAl2O4.

[0047] It should also be noted that the terms "Core" and "Core particle" are used interchangeably in the present invention, and the terms "Shell" and "Shell particle" are also used interchangeably in the present invention.

[0048] The present invention provides a core / shell structure material in which a metal or ceramic compound having excellent plasma resistance is coated on the surface of an aluminum compound ceramic powder having high volume resistivity and thermal conductivity.

[0049] In addition, a ceramic member for a semiconductor manufacturing device is provided, which is manufactured by sintering the core / shell structure material, and satisfies the high volume resistance and thermal conductivity required for an electrostatic chuck (ESC) or a ceramic heater, and has high strength / hardness and density and excellent plasma resistance properties.

[0050] An electrostatic chuck or ceramic heater manufactured using a ceramic member according to the present invention has the advantage of minimizing particle generation and lowering the level of contamination with metals and particles even when exposed to extreme conditions such as high temperature and high energy plasma during a semiconductor manufacturing process, and of simplifying the manufacturing process and reducing manufacturing costs because there is no need to form a separate coating layer to improve plasma resistance.

[0051] Hereinafter, the core / shell structure material according to the present invention will be described in more detail.

[0052] The core / shell structure material according to one embodiment of the present invention is included in a ceramic member for a semiconductor manufacturing device, and as illustrated in FIG. 1, includes a core including an aluminum compound and a shell surrounding the core and coated on the surface of the core.

[0053] The above core comprises a ceramic material having high volume resistance and thermal conductivity, and preferably comprises at least one of aluminum oxide and aluminum nitride (AlN) among aluminum compounds, and it is preferable that the aluminum oxide is alumina (Al2O3).

[0054] Additionally, the core may further include various ceramic materials having high volume resistivity and thermal conductivity and used in conventional electrostatic chucks and ceramic heaters.

[0055] However, it may be more preferable that the core contains only an aluminum compound.

[0056] And, it is preferable that the aluminum compound is included in the core in the form of a powder, and therefore, the core can have a form composed of particles.

[0057] The shell coated on the surface of the core includes a metal or ceramic mixture material having excellent plasma resistance.

[0058] The above plasma-resistant metal or ceramic compound is yttrium-aluminum garnet (Y3Al5O 12 , YAG), yttrium-aluminum perovskite (YAlO3, YAP) and yttrium-aluminum monoclinic (Y4Al2O9, YAM), yttrium-aluminum oxide, yttrium oxide, magnesium oxide, yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), magnesium silicate (Mg2SiO4) and mullite (Mullite, 3Al2O3·2SiO2), and among these, yttrium-aluminum garnet (YAG, Y3Al5O 12 ), yttria (Y2O3) or magnesium oxide may be preferred as the plasma-resistant metal or ceramic compound.

[0059] In addition, it is preferable that the above-mentioned plasma-resistant metal or ceramic compound be included in the shell in the form of a powder, and therefore, the shell may have a form composed of particles.

[0060] The core / shell structural material according to the present invention may be in the form of an alumina core particle or an aluminum nitride core particle coated with an yttrium-aluminum oxide shell particle, an yttria shell particle, or a magnesium oxide shell particle.

[0061] Meanwhile, the YAG shell particles can be formed by directly coating commercially available YAG powder on the surface of the core particle, or by coating YAG powder prepared by reaction sintering a powder mixture of yttrium oxide (e.g., Y2O3) and aluminum oxide (e.g., Al2O3) on the surface of the core particle.

[0062] However, it is preferable that by subjecting the powder coated with yttria on the surface of the alumina core particle or the surface of the aluminum nitride core particle to heat treatment and ball milling, all or at least a portion of the yttria is converted into a YAG phase by a reaction between the alumina or aluminum nitride and the yttria, so that the converted YAG phase surrounds the surface of the alumina core particle or the surface of the aluminum nitride core particle.

[0063] In other words, it is preferable to form the aluminum nitride-YAG core / shell structural material or the alumina-YAG core / shell structural material by forming an yttria coating layer on the surface of the aluminum nitride core particle or the surface of the alumina core particle, and performing heat treatment and ball milling treatment so that the yttria coated on the surface of the core particle can react with the aluminum nitride or alumina inside the coating layer and be converted into a YAG phase, thereby forming the aluminum nitride-YAG core / shell structural material or the alumina-YAG core / shell structural material.

[0064] At this time, it is preferable to appropriately adjust the content ratio of the alumina and yttria or the content ratio of the aluminum nitride and yttria so that the yttria coated on the surface of the alumina core particle or the aluminum nitride core particle for forming the YAG shell reacts with the alumina or aluminum nitride to completely convert into a YAG phase, and at the same time, the remaining amount of alumina or aluminum nitride after reacting with the yttria inside the shell converted into the YAG phase can form a core.

[0065] More specifically, the content ratio of the alumina and yttria or the content ratio of the aluminum nitride and yttria is preferably adjusted to match the content of the YAG shell so that the YAG shell can be formed by converting all of the yttria into a YAG phase through the reaction of the alumina or aluminum nitride and yttria. At this time, the content of the alumina core particles or the aluminum nitride core particles is preferably 50 wt% to 85 wt% with respect to the total weight of the core / shell structural material, and the content of the YAG shell particles is preferably 15 wt% to 50 wt%.

[0066] If the content of the YAG shell particles is less than 15 wt%, the hardness and density of the ceramic member for semiconductor manufacturing devices manufactured through sintering of the core / shell structure material are reduced, making it difficult to secure sufficient plasma resistance. In addition, if the content of the YAG shell particles exceeds 50 wt%, the volume resistivity and thermal conductivity of the ceramic member are reduced, making it difficult to apply the ceramic member to an electrostatic chuck or ceramic heater.

[0067] Meanwhile, when the core / shell structure material is a material in which yttria shell particles are coated on the surface of alumina core particles or aluminum nitride core particles, the content of the alumina core particles or aluminum nitride core particles is preferably 70 wt% to 90 wt%, and the content of the yttria shell particles is preferably 10 wt% to 30 wt%.

[0068] Even in this case, the yttria shell particles are converted into a YAG phase through reaction sintering of the alumina core particles or aluminum nitride core particles and the yttria shell particles during the sintering process, and at this time, the content of the alumina core particles or aluminum nitride core particles with respect to the total weight of the ceramic member is preferably 50 wt% to 85 wt%, and the content of the YAG is preferably 15 wt% to 50 wt%.

[0069] Here, the thickness ratio of the core and shell can be appropriately adjusted to achieve a composition that satisfies the content range of the core component of the core / shell structural material, which is alumina or aluminum nitride, and the shell component, which is YAG or yttria.

[0070] More specifically, when the particle radius of the core is R1 and the thickness of the shell (i.e., the distance from the outermost surface of the core to the outermost surface of the shell) is R2, when the core / shell structure material is formed of an aluminum nitride-YAG or alumina-YAG structure, it is preferable that the R1 / R2 value be 4 to 25. In addition, when the core / shell structure material is formed of an aluminum nitride-yttria or alumina-yttria structure, it is preferable that the R1 / R2 value be 9 to 42.

[0071] In addition, when the core / shell structure material is a material in which magnesium oxide shell particles are coated on the surface of alumina core particles or aluminum nitride core particles, the content of the alumina core particles or aluminum nitride core particles is preferably 97.2 wt% to 85 wt%, and the content of the magnesium oxide particles is preferably 2.8 wt% to 15 wt%.

[0072] And, in the sintering process, the magnesium oxide shell particles are converted into a magnesium aluminate spinel (MgAl2O4, hereinafter referred to as “spinel”) phase through reaction sintering of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles. At this time, the content of the alumina or aluminum nitride with respect to the total weight of the ceramic member is preferably 50 wt% to 90 wt%, and the content of the spinel is preferably 10 wt% to 50 wt%.

[0073] Here, the content of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles can be controlled by adjusting the thickness ratio of the alumina core particles or aluminum nitride core particles and the magnesium oxide shell particles.

[0074] More specifically, when the particle radius of the core is R1 and the thickness of the shell (i.e., the distance from the outermost surface of the core to the outermost surface of the shell) is R2, when the core / shell structure material is composed of an aluminum nitride-magnesium oxide or alumina-magnesium oxide structure, it is preferable that the R1 / R2 value be 16 to 114.

[0075] Meanwhile, the shell may further include at least one selected from the group consisting of yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), carbon (C), boron nitride (BN), silicon carbide (SiC), scandium (Sc), and niobium (Nb), which will be described in more detail in the ceramic member section to be described later.

[0076] Hereinafter, a ceramic member for a semiconductor manufacturing device according to the present invention will be described in more detail. The ceramic member for a semiconductor manufacturing device is a sintered body formed by sintering the core / shell structure material described above, and has a structure in which particle phases constituting the shell form a continuous phase along the grain boundary of the core particle phases. Here, the 'continuous phase' means that each shell particle phase surrounding a plurality of core particle phases is aggregated (combined). Therefore, the overall shape of the ceramic member has a form in which a plurality of core particle phases are partially positioned inside a continuous phase formed of shells, as illustrated in FIG. 2.

[0077] That is, the ceramic member can be formed by sintering the core / shell structure material described above, as illustrated in FIG. 2, and can be a base material of an electrostatic chuck (ESC) or a ceramic heater used as a component of a chamber for a semiconductor manufacturing device.

[0078] In general, electrostatic chucks and ceramic heaters are exposed to high temperatures and strong plasma environments during the semiconductor manufacturing process, and there is a problem that particles detached from the electrostatic chuck and ceramic heater contaminate the wafer surface due to corrosion and erosion caused by physical / chemical etching. Therefore, electrostatic chucks and ceramic heaters are required to have excellent plasma resistance characteristics, and in particular, electrostatic chucks are required to have high volume resistivity and thermal conductivity in addition to excellent plasma resistance characteristics.

[0079] Accordingly, in the case of conventional electrostatic chucks, the base substrate of the electrostatic chuck is manufactured with aluminum nitride or alumina materials that have excellent volume resistivity and thermal conductivity and also plasma resistance properties. In the case of these aluminum nitride and alumina materials, they show a high level of density and hardness during sintering, so they have excellent mechanical strength. However, there is a problem that the aluminum nitride and alumina materials are eroded by the process gas that receives energy including halogen-based plasma, and gaseous byproducts such as aluminum fluoride (AlF3) are formed, thereby generating contaminant particles, and there is a problem that the interior of the chamber and the wafer are contaminated by this.

[0080] In particular, as semiconductor processes have recently become larger, finer, and more integrated, higher energy plasma and high temperature conditions are required, and under these extreme conditions, the above problems are increasingly highlighted as major factors that reduce the yield of semiconductor substrates.

[0081] To solve these problems, various studies and methods have been attempted to improve plasma resistance by manufacturing a sintered ceramic base substrate of an electrostatic chuck using aluminum nitride or alumina materials and coating the surface of the manufactured base substrate with yttria or YAG, which are known to be chemically very inert and exhibit high halogen-based plasma corrosion resistance and corrosion resistance.

[0082] However, in the case of an electrostatic chuck in which a coating layer is formed in this way, there is a problem in that pores or cracks occur at the bonding interface between the ceramic body and the coating layer due to differences in thermal characteristics between the material used as the base material and the coating material, causing the coating layer to peel off or be damaged.

[0083] In order to fundamentally solve these problems, it is necessary to manufacture a sintered ceramic base material using a bulk sintered body that has excellent plasma resistance and high volume resistivity and thermal conductivity without forming a separate coating layer.

[0084] Accordingly, there have been attempts to manufacture a sintered ceramic base substrate for an electrostatic chuck using an yttria bulk sintered body or a YAG bulk sintered body. However, in this case, although the plasma resistance characteristics are excellent, it does not satisfy the volume resistivity and thermal conductivity required for a general electrostatic chuck, and since a large amount of yttrium, an expensive rare earth element, must be used, there is a problem of increased manufacturing cost. Therefore, the existing yttria bulk sintered body and YAG bulk sintered body are only applied to chamber parts such as edge rings, lift pins, or shower heads that require only mechanical strength and excellent plasma resistance characteristics, rather than being applied as a sintered ceramic base substrate for an electrostatic chuck.

[0085] In order to solve such problems, the inventors of the present invention manufactured a bulk sintered body in the form of a mixture of alumina and YAG and conducted tests to manufacture a sintered ceramic base substrate having improved plasma resistance while maintaining the volume resistivity and thermal conductivity required in a general electrostatic chuck. In addition, through tests, it was confirmed that when the alumina phase is included in an amount of 50 to 85 wt% and the YAG phase is included in an amount of 15 to 50 wt% based on the total weight of the bulk sintered body, the physical properties such as hardness, density, volume resistivity, and thermal conductivity are maintained at the same level as those of the existing alumina sintered body, while also improving corrosion resistance due to chemical erosion, thereby ensuring excellent plasma resistance.

[0086] However, even in the case of the alumina and YAG mixture sintered body, the plasma resistance at the same level as that of the yttria-only or YAG-only bulk sintered body was not exhibited. This is thought to be because the alumina phase and the YAG phase are evenly distributed on the surface of the sintered body exposed to the plasma, and the alumina phase present on the surface of the sintered body is corroded or eroded by the plasma gas or process gas, thereby forming gaseous byproducts, and these gaseous byproducts are detached from the sintered body due to the ion bombardment of the plasma.

[0087] Accordingly, the ceramic member for a semiconductor manufacturing device according to the present invention is formed as a bulk sintered body for an electrostatic chuck or ceramic heater base substrate by mixing an aluminum nitride or alumina material having high volume resistivity and thermal conductivity and a YAG or spinel material having excellent plasma resistance properties, and sintering is performed using the core / shell structure material so that the aluminum nitride or alumina phase included in the sintered body is surrounded by the YAG or spinel phase and is not exposed to plasma.

[0088] That is, the ceramic member may be formed by sintering the above-described aluminum nitride-YAG core / shell structure material or the alumina-YAG core / shell structure material, or may be formed by sintering the above-described aluminum nitride-yttria core / shell structure material, the alumina-yttria core / shell structure material, the aluminum nitride-magnesium oxide core / shell structure material, or the alumina-magnesium oxide core / shell structure material.

[0089] When the ceramic member is formed by sintering the aluminum nitride-YAG core / shell structure material or the alumina-YAG core / shell structure material in this way, as illustrated in FIG. 2, the YAG phases constituting the shell form a continuous YAG phase along the grain boundary of the aluminum nitride or alumina phases constituting the core.

[0090] That is, the aluminum nitride or alumina particles are formed by being sintered while being surrounded by continuous YAG phases and not exposed on the surface of the ceramic member.

[0091] Therefore, due to the internal crystal structure as described above, even when the ceramic member is exposed to plasma, the aluminum nitride particles or alumina particles are exposed to plasma with minimal exposure, and only the YAG phase, which has relatively low chemical activity and excellent chemical corrosion resistance, is exposed to plasma, thereby improving the plasma resistance of the ceramic member to a level equal to or similar to that of the YAG bulk sintered body.

[0092] In addition, due to the aluminum nitride or alumina phases present inside the ceramic member surrounded by the continuous YAG phases, there is an advantage in that the volume resistivity and thermal conductivity of the ceramic member can be maintained at a level equivalent to or similar to that of a conventional aluminum nitride or alumina bulk sintered body.

[0093] Accordingly, when the ceramic member is used as a base material for an electrostatic chuck or a ceramic heater, not only can excellent plasma resistance characteristics be secured without providing a separate coating layer for improving plasma resistance, but also a sintered ceramic base material having high volume resistivity and thermal conductivity required for a typical electrostatic chuck or ceramic heater can be manufactured.

[0094] Meanwhile, when the ceramic member is formed by sintering the aluminum nitride-yttria core / shell structure material or the alumina-yttria core / shell structure material, during the sintering process, all or at least a portion of the yttria constituting the shell is converted into a YAG phase by reaction sintering of the aluminum nitride or alumina constituting the core.

[0095] At this time, the YAG phase reacts with the yttria and forms a continuous YAG phase along the interface of the remaining aluminum nitride or alumina phases, as in the sintering of the aforementioned aluminum nitride-YAG core / shell structure material or alumina-YAG core / shell structure material.

[0096] Therefore, even in the case of the ceramic member formed by sintering the aluminum nitride-yttria core / shell structure material or the alumina-yttria core / shell structure material, it is possible to secure excellent plasma resistance properties by having the same internal crystal structure as the ceramic member formed by sintering the aluminum nitride-YAG core / shell structure material or the alumina-YAG core / shell structure material, and it is possible to manufacture a sintered ceramic base material having high volume resistivity and thermal conductivity required in a typical electrostatic chuck or ceramic heater.

[0097] In addition, when forming the ceramic member through sintering of the aluminum nitride-magnesium oxide core / shell structural material or the alumina-magnesium oxide core / shell structural material, during the sintering process, all or at least a portion of the magnesium oxide is converted into a spinel phase by reaction sintering of the magnesium oxide constituting the shell and the aluminum nitride or alumina constituting the core, and at this time, the converted spinel phase reacts with the magnesium oxide to form a continuous spinel phase along the interface of the remaining aluminum nitride or alumina phases.

[0098] Therefore, even in the case of a ceramic member formed by sintering the aluminum nitride-magnesium oxide core / shell structure material or the alumina-magnesium oxide core / shell structure material, the aluminum nitride particles or the alumina particles are surrounded by a spinel phase continuously formed along the interface, so that exposure to plasma is minimized, and only the spinel phase having relatively low chemical activity and excellent chemical erosion resistance is exposed to plasma, so that not only can excellent plasma resistance characteristics be secured, but also it is possible to manufacture a sintered ceramic base material having high volume resistivity and thermal conductivity required in a typical electrostatic chuck or ceramic heater.

[0099] In the ceramic member manufactured in this manner, the content of the alumina or aluminum nitride present inside the alumina-YAG ceramic member or the aluminum nitride-YAG ceramic member is preferably 50 wt% to 85 wt%, and the content of the YAG is preferably 15 wt% to 50 wt%. In addition, the content of the alumina or aluminum nitride present inside the alumina-spinel ceramic member or the aluminum nitride-spinel ceramic member is preferably 50 wt% to 90 wt%, and the content of the spinel is preferably 10 wt% to 50 wt%.

[0100] If the content of alumina or aluminum nitride is less than 50 wt% outside the above content range, the volume resistivity and thermal conductivity of the ceramic member decrease, which causes problems in application to an electrostatic chuck or ceramic heater. In addition, if the content of alumina or aluminum nitride exceeds the upper limit of the above range, there is a problem in that the content of YAG or spinel phase contained therein is low, which deteriorates the plasma resistance characteristics.

[0101] In addition, if the content of the YAG or spinel is below the lower limit of the above range, it is difficult to expect plasma resistance characteristics equivalent to or similar to those of YAG or yttria bulk sintered body. In addition, if the content of the YAG or spinel exceeds 50 wt%, the volume resistivity and thermal conductivity may decrease, making it difficult to apply to an electrostatic chuck or ceramic heater.

[0102] Here, the sintering is a method of forming bulk materials from powders using heat, pressure and / or energy, and may be performed through various sintering methods used for sintering conventional ceramic materials, and may preferably be performed by a hot press method.

[0103] In particular, when manufacturing the ceramic member using an aluminum nitride-yttria core / shell structure material or an alumina-yttria core / shell structure material, there may be a problem that the YAG phase is hardly formed because the reaction sintering between aluminum nitride-yttria or alumina-yttria does not occur smoothly in general atmospheric sintering, so it is preferable to manufacture the ceramic member through a hot-press sintering process.

[0104] In one embodiment of the ceramic member according to the present invention described above, the ceramic member having excellent plasma resistance and high volume resistivity and thermal conductivity is described by forming continuous YAG or spinel phases along the grain boundary of aluminum nitride or alumina phases constituting the core through sintering of the core / shell structure material, but the present invention is not limited thereto, and in addition to the YAG or spinel, at least one selected from the group consisting of YAS (Yttria-Alumina-Silica or Yttrium aluminosilicate, Y2O3-Al2O3-SiO2), carbon (carbon, C), boron nitride (BN), silicon carbide (SiC), scandium (Sc), and niobium (Nb) may be further positioned at the boundary of the aluminum nitride or alumina phases. there is.

[0105] These additional components are evenly dispersed along the interface of the aluminum nitride or alumina phases with the YAG or spinel phase and distributed within the ceramic member, thereby further improving the thermal conductivity, mechanical strength and hardness, density, etc. of the ceramic member, thereby further improving the overall physical properties of the base member for an electrostatic chuck or ceramic heater manufactured using the ceramic member.

[0106] Additionally, the additional components may be included in the process of forming the shell of the core / shell structure material, or may be added to the ceramic member by being mixed and sintered together with the core / shell structure material in the process of manufacturing the ceramic member through sintering of the core / shell structure material.

[0107] Accordingly, the additional components can play a role in improving the overall physical properties of the ceramic member, such as thermal conductivity, mechanical strength, hardness, and density, by being evenly dispersed while forming a continuous phase along the interface of the aluminum nitride and alumina phases that constitute the core together with the shell component.

[0108] As described above, the present invention provides a ceramic member for a semiconductor manufacturing device having excellent plasma resistance and durability, in which a continuous YAG or spinel phase is formed along an interface of an alumina or aluminum nitride phase using a core / shell structure material.

[0109] In addition, the core / shell structure material according to the present invention and the ceramic member for a semiconductor manufacturing device using the same have high strength / hardness and density, and thus have the advantage of minimizing corrosion and erosion characteristics and particle and / or metal contamination in the extreme environment of a semiconductor process.

[0110] In particular, the ceramic member according to the present invention has excellent plasma resistance and durability as described above, and at the same time, has high volume resistance and thermal conductivity required when manufacturing an electrostatic chuck (ESC) or a ceramic heater, so that it has the advantage of being able to manufacture an electrostatic chuck and a ceramic heater with excellent performance without a separate plasma-resistant coating layer.

[0111] In addition, the ceramic member according to the present invention has the advantage of not only reducing the content of expensive E-tri by applying a ceramic material of a core / shell structure, but also simplifying the manufacturing process and reducing the manufacturing cost by eliminating the need to form a separate plasma-resistant coating layer.

[0112] Herein, a method for manufacturing a ceramic member for a semiconductor manufacturing device using a core / shell structure material according to the present invention is described.

[0113] The method for manufacturing the ceramic member for the semiconductor manufacturing device includes a step of mixing and reacting an aluminum compound and a plasma-resistant metal or ceramic compound, and may further include a step of ultrasonic treatment during the mixing and reaction.

[0114] The above ultrasonic treatment is intended to improve the dispersibility of a mixture, reactant or reaction product and promote uniform distribution of particles. There are no particular restrictions on the timing or number of times it is performed, such as after all raw materials are added or after only one raw material is added.

[0115] In addition, a linker such as urea (CO(NH2)2) can be supplied separately before, after, or during the input of raw materials.

[0116] And, stirring can be done simultaneously with the input of raw materials.

[0117] Additionally, the reaction between the above raw materials can be performed in the presence of Di Water (three-distilled water), etc.

[0118] For example, in the presence of Di Water (3-distilled water), an aluminum compound may be supplied to a reactor at about 90°C and stirred, followed by ultrasonic treatment at about 60°C for about 15 minutes. At this time, an additional stirring process may be performed for about 15 minutes to raise the temperature again to about 90°C. Subsequently, a linker may be introduced into the reactor, and after about 2 minutes from this point, ultrasonic treatment may be performed at about 60°C for about 15 minutes, and a stirring process may be performed again for about 15 minutes to raise the temperature again to about 90°C. In addition, any one or more of the above processes may be repeated 2 to 6 times, preferably 3 to 5 times. Subsequently, another raw material, a plasma-resistant metal or ceramic compound, may be additionally introduced into the reactor, and after about 2 minutes from this point, ultrasonic treatment may be performed at about 60°C for about 15 minutes, and a stirring process may be performed again for about 15 minutes to raise the temperature again to about 90°C. Finally, a core / shell structured material can be synthesized by additionally performing a stirring process for several minutes to several hours.

[0119] Meanwhile, for the purpose of removing unreacted residual linker and other impurities, a washing process using Di Water (three-distilled water) and alcohol can be performed, and this washing process can be repeated multiple times.

[0120] And, by drying the synthesized core / shell structure material at a temperature of about 70 to 90°C for 1 to 48 hours, preferably 12 to 36 hours, it is possible to obtain a core / shell structure material with higher purity.

[0121] Finally, the core / shell structure material manufactured as described above can be crushed using a ball mill device, or sintered using a hot-press method to manufacture a sintered body having a structure in which the particle phases constituting the shell form a continuous phase along the grain boundary of the core particle phases, i.e., a ceramic member for a semiconductor manufacturing device.

[0122] Here, yttrium-aluminum garnet (Y3Al5O) that can be included in the above 'shell' 12 , YAG) is briefly described. Conventional YAG manufacturing methods include sol-gel combustion, hydrothermal synthesis, and co-precipitation.

[0123] First, the sol-gel method is a method capable of producing "high-purity powders with uniform composition and fine particles." However, most of the nanoparticles produced are amorphous, requiring a heat treatment process for crystallization. Typically, temperatures above 800°C are required for a certain period of time to form a crystalline phase, which increases particle size and increases manufacturing costs.

[0124] Hydrothermal synthesis can produce "crystalline powders and powders with spherical, small particle sizes" at relatively low temperatures (200°C, 168 h). However, the synthesis process involves interactions between the powder and water, making it difficult to synthesize a complex oxide with a uniform composition. Furthermore, the process requires a significant amount of time.

[0125] Co-precipitation is a method for simultaneously precipitating various different ions from aqueous or non-aqueous solutions. It offers the advantage of uniform dispersion during the YAG manufacturing process, as the powder-like raw materials exist in their respective ionic forms. However, it also has the disadvantage of impurities co-precipitating during the precipitation process or insufficient dispersion, preventing complete precipitation.

[0126] Therefore, in order to synthesize YAG with a core / shell structure, high-purity particles must be manufactured, and for this purpose, the composition must be very uniform.

[0127] Accordingly, the applicant of the present invention has applied a method of improving the dispersibility of a mixture, reactant or reaction product by using a co-precipitation method and ultrasonic treatment to induce uniform distribution of particles.

[0128] Hereinafter, the present invention will be described in more detail through specific examples. The following examples are intended to illustrate the present invention, and the present invention is not limited to the following examples.

[0129] [Example 1] Manufacturing of ceramic components for semiconductor manufacturing devices

[0130] First, in the presence of Di Water (3-distilled water), alumina was supplied to a reactor at 90°C, and after 2 minutes, it was subjected to ultrasonic treatment at 60°C for 15 minutes, and then stirred for an additional 15 minutes until the temperature was raised to 90°C. Next, urea (CO(NH2)2) was supplied to the reactor as a linker, and after 2 minutes, it was subjected to ultrasonic treatment at 60°C for 15 minutes, and then stirred for 15 minutes until the temperature was raised to 90°C. This process was repeated a total of 4 times. Subsequently, yttria, another raw material, was additionally supplied to the reactor, and after 2 minutes, it was subjected to ultrasonic treatment at 60°C for 15 minutes, and then stirred for 15 minutes until the temperature was raised to 90°C. Subsequently, a stirring process was additionally performed for about 3 hours to synthesize a core / shell structure material, and a washing process using Di Water and ethanol was performed four times to remove unreacted residual linkers and other impurities. Afterwards, to increase the purity of the synthesized core / shell structure material, it was dried in an oven at 80°C for 24 hours.

[0131] Finally, the core / shell structure material manufactured above was pulverized with a planetary ball mill for 2 hours and then hot-pressed and sintered at a temperature of 1,570°C for 4 hours to manufacture a sintered body having a structure in which particle phases constituting the shell (YAG) form a continuous phase along the interface of core (alumina) particle phases, i.e., a ceramic member for a semiconductor manufacturing device.

[0132] Meanwhile, alumina and yttria used in the synthesis of core / shell structural materials were introduced into the reactor at a weight ratio of 7:3, and the linker was used at 800 parts by weight per 100 parts by weight of yttria introduced (i.e., 200 parts by weight were used per 100 parts by weight of yttria introduced when the linker was introduced once).

[0133] [Comparative Example 1] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0134] Alumina was molded and sintered according to conventional methods to produce a ceramic component for a semiconductor manufacturing device.

[0135] [Comparative Example 2] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0136] Yttrium-aluminum garnet (Y3Al5O) according to the conventional method 12 , YAG) was molded and sintered to manufacture a ceramic member for a semiconductor manufacturing device.

[0137] [Comparative Example 3] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0138] A ceramic component for a semiconductor manufacturing device was manufactured by molding and sintering yttria according to a conventional method.

[0139] [Comparative Example 4] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0140] A ceramic member for a semiconductor manufacturing device containing YAG and alumina as independent phases was manufactured by mechanically mixing 60 wt% of alumina and 40 wt% of yttria according to a conventional method and then sintering them.

[0141] [Comparative Example 5] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0142] A ceramic member for a semiconductor manufacturing device containing YAG and alumina as independent phases was manufactured by mechanically mixing 70 wt% of alumina and 30 wt% of yttria according to a conventional method and then sintering them.

[0143] [Comparative Example 6] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0144] A ceramic member for a semiconductor manufacturing device containing YAG and alumina as independent phases was manufactured by mechanically mixing 80 wt% of alumina and 20 wt% of yttria according to a conventional method and then sintering them.

[0145] [Comparative Example 7] Manufacturing of ceramic components for semiconductor manufacturing equipment

[0146] A ceramic member for a semiconductor manufacturing device containing YAG and alumina as independent phases was manufactured by mechanically mixing 90 wt% of alumina and 10 wt% of yttria according to a conventional method and then sintering them.

[0147] In Table 1 below, the starting composition and post-sintering composition of Example 1 and Comparative Examples 1 to 7 are shown, respectively.

[0148] Starting composition Composition after sintering Alumina Yttria YAG Alumina Yttria YAG Example 17030-75.81-24.19 Comparative example 1100--100--Comparative example 2--100--100 Comparative example 3-100--100-Comparative example 46040-30.2-69.8 Comparative example 57030-49.06-50.94 Comparative example 68020-64.91-35.09 Comparative example 79010-82.24-17.76

[0149] ※ Unit: wt%

[0150] Fig. 3 is an XRD graph of a ceramic member for a semiconductor manufacturing device according to one embodiment of the present invention, and Fig. 4 is an XRD graph of a typical ceramic member for a semiconductor manufacturing device (specifically, corresponding to the ceramic member manufactured in Comparative Example 5). The results calculated through peak values ​​at specific 2θ also confirmed that the composition was equivalent to the composition after sintering according to Table 1.

[0151] [Experimental Example 1] Structural Evaluation of Sintered Body

[0152] As a result of confirming the phase morphology of the sintered bodies manufactured in Example 1 and Comparative Examples 1 to 7, it was found that the sintered body of Example 1 had a structure in which YAG phases forming a shell along the interface of alumina particle phases formed a continuous phase, as shown in Table 2 below. On the other hand, it was confirmed that Comparative Examples 1 to 3 were composed of only a single phase, and Comparative Examples 4 to 7 were composed of two phases, but were independent of each other.

[0153] Phase morphology after sintering Example 1 Structure in which particle phases forming a shell along the interface of core particle phases form a continuous phase Comparative example 1 Single phase Comparative example 2 Single phase Comparative example 3 Single phase Comparative example 42 phases exist independently of each other Comparative example 52 phases exist independently of each other Comparative example 62 phases exist independently of each other Comparative example 72 phases exist independently of each other

[0154] FIG. 5 is an image (FIGS. 5a and 5b) of a ceramic member for a semiconductor manufacturing device according to an embodiment of the present invention observed using a transmission electron microscope (TEM), FIG. 6 is an image of a cross-section of a ceramic member for a semiconductor manufacturing device according to an embodiment of the present invention observed using a scanning electron microscope (SEM), and FIG. 7 is an image of a cross-section of a conventional ceramic member for a semiconductor manufacturing device observed using a scanning electron microscope.

[0155] More specifically, when the ceramic member for a semiconductor manufacturing device manufactured in Example 1 was observed using a transmission electron microscope, a clear difference in brightness between the interior and exterior was observed, as shown in FIGS. 5A and 5B . In addition, the component analysis results confirmed that alumina was located in the interior and YAG was located in the exterior.

[0156] Next, as a result of observing the cross-section of the ceramic member for semiconductor manufacturing device manufactured in Example 1 using a scanning electron microscope, it was confirmed that the YAG particle phase formed a continuous phase along the grain boundary of the alumina particle phase, as shown in Fig. 6.

[0157] On the other hand, in the case of the ceramic member for semiconductor manufacturing device manufactured in Comparative Example 5, as shown in Fig. 7, it was confirmed that although it was distinguished into an alumina particle phase and a YAG particle phase, these were composed of independent phases.

[0158] (For the remaining comparative examples 4, 6 and 7, where it was confirmed that the sintered body contained an alumina particle phase and a YAG particle phase, it was also confirmed that the alumina particle phase and the YAG particle phase were composed of independent phases.)

[0159] [Experimental Example 2] Evaluation of physical properties of sintered bodies

[0160] After applying a voltage of 500 V / mm to each sintered body manufactured in Example 1 and Comparative Examples 1 to 7, the current was measured after 1 minute (measured under a vacuum atmosphere and room temperature) to calculate the volume resistivity, and the results are shown in Table 3 below.

[0161] In addition, each of the sintered bodies manufactured in Example 1 and Comparative Examples 1 to 7 was made into specimens according to the standard of ASTM C0408-88R11 using LFA 467 equipment from NETZSCH, and then the thermal conductivity was measured at room temperature to calculate the thermal conductivity, and the results are also shown in Table 3 below.

[0162] In addition, the density value of each sintered body manufactured in Example 1 and Comparative Examples 1 to 7 was calculated using the Archimedes method, and the results are also shown in Table 3 below.

[0163] In addition, the etching rate was measured for each sintered body manufactured in Example 1 and Comparative Examples 1 to 7, and the results are also shown in Table 3 below. A DektakXT Stylus Profiler (manufacturer: Bruker) was used to measure the etching rate.

[0164] In addition, the hardness of each sintered body manufactured in Example 1 and Comparative Examples 1 to 7 was measured, and the results are also shown in Table 3 below. A micro Vickers hardness tester (HM-210A, Mitutoyo) was used for the hardness measurement, and the microhardness scale was set to HV0.5.

[0165] Volume resistivity (@ 500℃, Ω·cm)Thermal conductivity (@ room temperature, W / mk)Density (g / cm) 3 ) Etching rate (nm / min) Hardness (Gpa) Example 12.7E+12324.1042.331,780 Comparative example 11.0E+11233.94922.81,990 Comparative example 21.5E+08104.5644.51,356 Comparative example 31.2E+08134.6712.11600 Comparative example 45.7E+09154.372-1,511 Comparative example 54.8E+09184.2718.71,622 Comparative example 62.5E+10234.1789.91,780 Comparative example 76.0E+11304.07414.91,687

[0166] As a result of measuring the volume resistivity and thermal conductivity of each sintered body manufactured in Comparative Examples 1 to 7 of Example 1, as shown in Table 3, the sintered body of Example 1 exhibited a higher volume resistivity than a conventional sintered body (Comparative Examples 1 to 7), and the thermal conductivity also satisfied the level required for an electrostatic chuck and a ceramic heater.

[0167] At the same time, the hardness and density of the sintered body manufactured in Example 1 were shown to be at a level capable of preventing or minimizing corrosion and erosion characteristics and particle and / or metal contamination in the extreme environment of a semiconductor process.

[0168] Above all, the sintered body manufactured in the above Example 1 has an etching rate of only 2.33 nm / min, so that even in a harsh plasma environment such as a high temperature and high energy plasma, the amount of etching byproducts and the generation of contaminant particles are small, and accordingly, it was confirmed that the yield loss of a semiconductor device can be minimized by applying the sintered body manufactured in the above Example 1.

[0169] Meanwhile, the sintered body of Comparative Example 3 also had an etching rate of only 2.11 nm / min, but the remaining physical properties, i.e., volume resistivity, thermal conductivity, and hardness, were particularly very low, making it unsuitable as a ceramic member for semiconductor manufacturing devices.

[0170] That is, the ceramic member for a semiconductor manufacturing device according to the present invention must satisfy the level required by an electrostatic chuck or ceramic heater in all of its major properties (volume resistivity, thermal conductivity, density, etching rate, and hardness).

[0171] In summary, even if a ceramic member including a YAG phase is manufactured by mixing and sintering alumina and yttria, it can be seen that excellent plasma resistance and other properties above the standard cannot be achieved simply by mechanical mixing and sintering.

[0172] As described above, the present invention has been described with specific details such as specific components and limited examples and drawings, but this is only provided to help a more general understanding of the present invention, and the present invention is not limited to the above-described embodiments, and those with ordinary skill in the art to which the present invention pertains may make various modifications and variations without departing from the essential characteristics of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments, and all technical ideas that are equivalent or equivalent to the claims described below as well as the claims should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. Included in ceramic components for semiconductor manufacturing equipment, a core comprising an aluminum compound; and a shell comprising a plasma-resistant metal or ceramic compound, at least partially surrounding the core; A core / shell structural material in which the core and shell have a form composed of particles.

2. In paragraph 1, A core / shell structural material, wherein the aluminum compound is at least one of aluminum nitride and aluminum oxide.

3. In paragraph 1, The above plasma-resistant metal or ceramic compound is yttrium-aluminum garnet (Y3Al5O 12 , YAG), yttrium-aluminum perovskite (YAlO3, YAP), and yttrium-aluminum monoclinic (Y4Al2O9, YAM), yttrium oxide, magnesium oxide, yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), magnesium silicate (Mg2SiO4), and mullite (3Al2O3·2SiO2).

4. In paragraph 3, The above plasma-resistant metal or ceramic compound is yttrium-aluminum garnet (YAG, Y3Al5O 12 ), yttria (Y2O3) and magnesium oxide, a core / shell structural material selected from the group consisting of.

5. In paragraph 3, A core / shell structural material, wherein the shell further comprises at least one selected from the group consisting of yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), carbon, boron nitride, silicon carbide, scandium, and niobium.

6. A sintered body formed by sintering the core / shell structure material of paragraph 1, A ceramic member for a semiconductor manufacturing device having a structure in which particle phases constituting the shell form a continuous phase along the grain boundary of the core particle phases.

7. In paragraph 6, The core particle phase comprises at least one of aluminum nitride and aluminum oxide, The above continuous phase is yttrium-aluminum garnet (Y3Al5O 12 A ceramic member for a semiconductor manufacturing device, comprising a plasma-resistant metal or ceramic compound selected from the group consisting of yttrium-aluminum oxide, yttrium oxide, magnesium oxide, yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), magnesium silicate (Mg2SiO4), and mullite (3Al2O3·2SiO2), selected from the group consisting of yttrium-aluminum perovskite (YAlO3, YAP), and yttrium-aluminum monoclinic (Y4Al2O9, YAM).

8. In paragraph 6, The above continuous phase is yttrium-aluminum garnet (YAG, Y3Al5O 12 ), yttria (Y2O3) and magnesium oxide, a ceramic member for a semiconductor manufacturing device.

9. In paragraph 8, The ceramic member for the semiconductor manufacturing device comprises yttrium-aluminum garnet (YAG, Y3Al5O) along the interface of the aluminum nitride or aluminum oxide phases. 12 ) or magnesium aluminate spinel (MgAl2O4) having a structure in which a continuous phase is formed.

10. In paragraph 9, A ceramic member for a semiconductor manufacturing device, wherein the content of the aluminum nitride or aluminum oxide is 50 wt% to 85 wt%, and the content of the yttrium-aluminum garnet is 15 wt% to 50 wt%, based on the total weight of the ceramic member for the semiconductor manufacturing device.

11. In paragraph 9, A ceramic member for a semiconductor manufacturing device, wherein the content of the aluminum nitride or aluminum oxide is 50 wt% to 90 wt%, and the content of the magnesium aluminate spinel is 10 wt% to 50 wt%, based on the total weight of the ceramic member for the semiconductor manufacturing device.

12. In paragraph 9, A ceramic member for a semiconductor manufacturing device, wherein at least one selected from the group consisting of yttria-alumina-silica (Y2O3-Al2O3-SiO2, YAS), carbon, boron nitride, silicon carbide, scandium, and niobium is further positioned at the interface of the above aluminum nitride or aluminum oxide phases.

13. In paragraph 6, A ceramic member for a semiconductor manufacturing device, wherein the above sintering is sintering by hot press.

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