3D capacitorless dram device and manufacturing method thereof

Abstract

A 3D capacitorless DRAM device and a method of manufacturing the same are disclosed. This 3D capacitorless DRAM device may comprise: write bit lines extending vertically; write word lines extending in horizontally; a write transistor connected to the write bit lines and write word lines, and including a first channel material layer, a first gate insulating layer, and a portion of the read word line; read bit lines extending vertically; read word lines extending in horizontally; and a read transistor connected to the read bit lines and read word lines, and comprising a second channel layer pattern and a second gate insulation layer, the second channel layer pattern comprising a first portion adjacent to the read bit lines and extending horizontally, and a second portion distanced from the read bit lines and extending at a set angle from the first portion.

Description

Capacitorless 3D DRAM device and its manufacturing method

[0001] The present invention relates to semiconductor / electronic devices and methods for manufacturing the same, and more particularly, to memory devices and methods for manufacturing the same.

[0002] There is a continuous demand for increasing the performance and integration of semiconductor devices. The two-dimensional arrangement of semiconductor unit cells, i.e., planar arrangement, has reached its limit in increasing the integration of semiconductor devices. Therefore, attempts are being made to develop technologies that significantly increase the integration of semiconductor devices by integrating semiconductor unit cells three-dimensionally. In this regard, various attempts are being made to increase the integration of memory devices, such as NAND devices and DRAM devices. Furthermore, research and development is continuously being conducted to improve the performance and operating characteristics of memory devices.

[0003] Recently, a new DRAM structure, a two-transistor zero capacitor (2T0C) cell structure, has been proposed. 2T0C DRAM offers the advantages of utilizing the gate capacitance of the read transistor as a storage element, long data retention time, and the ability to configure cells using only multiple transistors without a capacitor.

[0004] However, since the existing 2T0C DRAM device has a structure in which both types of word lines and two types of bit lines extend horizontally and are vertically disconnected from each other, it is difficult to stack and integrate them three-dimensionally. That is, the first word line and the first bit line are arranged to be orthogonal to each other while extending horizontally, and similarly, the second word line and the second bit line are arranged to be orthogonal to each other while extending horizontally, so when the cells are stacked three-dimensionally, the cells are vertically disconnected, the manufacturing process is difficult, and mass production is impossible.

[0005] The technical problem to be achieved by the present invention is to provide a capacitor-less three-dimensional DRAM (dynamic random access memory) device that can significantly improve the three-dimensional integration density, secure excellent performance, and have an easy manufacturing process.

[0006] In addition, a technical problem to be achieved by the present invention is to provide a capacitorless 3D DRAM device capable of reducing the unit cell size.

[0007] In addition, a technical problem to be achieved by the present invention is to provide a method for manufacturing the above-described capacitorless 3D DRAM device.

[0008] The problems to be solved by the present invention are not limited to the problems mentioned above, and other problems not mentioned can be understood by those skilled in the art from the description below.

[0009] According to one embodiment of the present invention, there is provided a method of manufacturing a semiconductor device, comprising: forming a stack unit including a stacked portion having an insulating material layer and a first channel material layer, a first gate insulating layer, an intermediate layer, a buffer layer, and a separation layer sequentially stacked on the insulating material layer; patterning the stacked portion to form a patterned stacked body having a plurality of pattern portions, wherein the plurality of pattern portions extend in a first direction and are spaced apart from each other in a second direction orthogonal to the first direction; filling a filling material between the plurality of pattern portions to form a structure including the patterned stacked body and the filling material; forming a first vertical hole in the structure that vertically penetrates each of the plurality of pattern portions; forming a first recessed portion that recesses the intermediate layer and the filling material around the first vertical hole in the structure to expose the first gate insulating layer and the buffer layer; A method for forming a write transistor including a first channel material layer, a first gate insulating layer, and a portion of the write word line by forming a write word line extending horizontally within the first recessed portion; A method for forming a write bit line extending vertically at a position corresponding to the first vertical hole; A method for forming a second vertical hole vertically penetrating each of the plurality of pattern portions in the structure; A method for forming a second recessed portion by recessing the intermediate layer and the buried material around the second vertical hole of the structure to expose the first gate insulating layer and the buffer layer; A method for forming a third recessed portion by recessing the first channel material layer and the first gate insulating layer exposed by the second vertical hole; A method for forming a second gate insulating layer on an inner surface of the second vertical hole including surfaces of the second and third recessed portions;A method for manufacturing a capacitorless 3D DRAM device is provided, comprising: forming an electrode member that fills an end region of the second recessed portion on an area of ​​the second gate insulating layer formed in the second recessed portion; forming a second channel material layer on the second gate insulating layer and the electrode member exposed on an inner surface of the second vertical hole; defining a read word line extending horizontally from the electrode member by dividing each of the electrode member and the second channel material layer and defining a second channel layer pattern from the second channel material layer, thereby defining a read transistor including the second channel layer pattern and the second gate insulating layer; and forming a read bit line extending vertically at a position corresponding to the second vertical hole.

[0010] The intermediate layer may include silicon nitride, the buffer layer may include silicon, and the separation layer may include silicon oxide.

[0011] In the step of forming the first recessed portion, a plurality of the first recessed portions can be connected in the second direction.

[0012] The step of defining the above writing transistor may include the steps of forming a material layer for a writing word line on the inside of the first recess portion and on the inner surface of the first vertical hole; the step of removing a portion formed on the inner surface of the first vertical hole from the material layer for the writing word line; and the step of forming a first filling insulating layer that fills the first vertical hole.

[0013] The step of defining the above write transistor may further include the step of forming a first etching portion crossing a central portion of the material layer for the write word line and a central portion of the first filling insulating layer in the second direction, thereby defining the write word line divided from the material layer for the write word line; and the step of forming a first gap fill insulation layer filling the first etching portion.

[0014] The step of forming the write bit line may include a step of forming a first through hole by etching the first filling insulating layer and the first gapfill insulating layer at a position corresponding to the first vertical hole of the structure; and a step of forming the write bit line within the first through hole.

[0015] In the step of forming the second recessed portion, a plurality of the second recessed portions can be connected in the second direction.

[0016] The step of forming the electrode member may include the step of forming an electrode material layer that fills an end region of the second recessed portion on the second gate insulating layer; and the step of removing a portion of the electrode material layer other than a portion disposed in the end region of the second recessed portion by a wet etching method.

[0017] After the step of forming the second channel material layer, the method may further include: removing portions formed on the side surfaces of the separation layer and the buffer layer in the second channel material layer and the second gate insulating layer formed on the inner surface of the second vertical hole; forming a second filling insulating layer on the second channel material layer that fills the second and third recessed portions and the second vertical hole; forming a second through hole in the second filling insulating layer at a position corresponding to the second vertical hole; recessing the buffer layer, the second gate insulating layer, and the second channel material layer exposed by the second through hole; forming a third through hole having a size larger than the second through hole at a position corresponding to the second through hole and removing a portion formed on the side surface of the insulating material layer in the second channel material layer; and forming a third filling insulating layer that fills the third through hole.

[0018] After the step of forming the third filling insulating layer, the method may further include the step of forming a second etching portion crossing the central portion of the electrode member, the central portion of the second channel material layer, and the central portions of the second and third filling insulating layers in the second direction, thereby defining the read word line divided from the electrode member and the second channel layer pattern divided from the second channel material layer; and the step of forming a second gap fill insulating layer filling the second etching portion.

[0019] The step of forming the read bit line may include the step of forming a fourth through hole by etching the third filling insulating layer and the second gapfill insulating layer at a position corresponding to the second vertical hole of the structure; and the step of forming the read bit line within the fourth through hole.

[0020] The above-mentioned laminated portion may be an upper laminated portion, and the first channel material layer, the first gate insulating layer, the intermediate layer, the buffer layer, and the separation layer may be an upper first channel material layer, an upper first gate insulating layer, an upper intermediate layer, an upper buffer layer, and an upper separation layer, respectively, and the laminated body unit may further include a lower laminated portion disposed below the insulating material layer, and the lower laminated portion may include a lower separation layer, a lower buffer layer, a lower intermediate layer, a lower first gate insulating layer, and a lower first channel material layer sequentially laminated from below.

[0021] The above write transistor may be an upper write transistor, the above read transistor may be an upper read transistor, and the above upper write transistor and the above upper read transistor may constitute an upper memory cell.

[0022] A lower memory cell having a structure in which the upper memory cell is inverted upside down may be formed under the insulating material layer, and the lower memory cell may include a lower write transistor having a structure in which the upper write transistor is inverted upside down and a lower read transistor having a structure in which the upper read transistor is inverted upside down.

[0023] According to another embodiment of the present invention, a capacitorless 3D DRAM device is provided, comprising: a write bit line extending in a vertical direction; a write word line extending in a horizontal direction; a write transistor connected to the write bit line and the write word line, the write transistor defined by a first channel material layer, a first gate insulating layer, and a portion of the write word line; a read bit line extending in a vertical direction; a read word line extending in a horizontal direction; and a read transistor connected to the read bit line and the read word line, the second channel layer pattern including a first portion disposed adjacent to the read bit line and extending in a horizontal direction, and a second portion disposed spaced apart from the read bit line and extending in a direction having a given angle with respect to the first portion, and a second gate insulating layer.

[0024] The first portion of the second channel layer pattern may be in contact with the read bit line, and the second portion of the second channel layer pattern may be configured to extend in a vertical direction from an edge region of the first portion and to partially surround the read bit line while being spaced apart from the read bit line.

[0025] The second portion may have a concave shape with respect to the read bit line.

[0026] The above read word line may be arranged to surround a portion of the outer circumference of the second portion between the second gate insulating layer and the second channel layer pattern.

[0027] The second gate insulating layer may have a structure that surrounds the read word line while being disposed between the first channel material layer and the second channel layer pattern, and one end of the second gate insulating layer may be in contact with an end of the second portion.

[0028] The above read word line may have a structure in which arc-shaped electrode parts are connected in a row.

[0029] The above writing word line may have a structure in which arc-shaped electrode parts are connected in a row.

[0030] The write word line may be arranged between the write bit line and the read word line, and the read word line may be arranged between the write word line and the read bit line.

[0031] The above write bit line can be shared by two adjacent memory cells on both sides, and the above read bit line can be shared by two adjacent memory cells on both sides.

[0032] The above write transistor may be an upper write transistor, the above read transistor may be an upper read transistor, and the above upper write transistor and the above upper read transistor may constitute an upper memory cell.

[0033] A lower memory cell having a structure in which the upper memory cell is inverted upside down may be placed below the upper memory cell, and the lower memory cell may include a lower write transistor having a structure in which the upper write transistor is inverted upside down and a lower read transistor having a structure in which the upper read transistor is inverted upside down.

[0034] According to another embodiment of the present invention, there is provided a method of forming a stacked structure, the method comprising: forming a stacked structure including a separation layer and a first channel material layer, a first gate insulating layer, a first insulating layer, a second insulating layer, and a buffer layer sequentially stacked on the separation layer; patterning the stacked structure to form a patterned stacked structure including a plurality of pattern portions and first and second pattern extension portions extending in a direction connecting the plurality of pattern portions, the plurality of pattern portions extending in a first direction and being spaced apart from each other in a second direction orthogonal to the first direction, and the first and second pattern extension portions extending in the second direction; filling a first filling material between the plurality of pattern portions and between the first and second pattern extension portions to form a first structure including the patterned stacked structure and the first filling material; forming a first vertical hole in the first structure that vertically penetrates each of the plurality of pattern portions; A step of forming a first horizontal hole by recessing the first insulating layer around the first vertical hole of the first structure to form a first recessed portion and removing the first insulating layer from the first pattern extension portion; A step of forming a write word line extending horizontally within the first recessed portion and the first horizontal hole to define a write transistor including the first channel material layer, the first gate insulating layer, and a portion of the write word line; A step of removing the first buried material from the first structure and removing a portion of the first channel material layer from the first and second pattern extension portions in which the write transistor is defined; A step of filling a second buried material between the plurality of pattern portions in which the write transistor is defined and between the first and second pattern extension portions to form a second structure including the plurality of pattern portions, the first and second pattern extension portions, and the second buried material;A method of forming a write bit line extending vertically at a position corresponding to the first vertical hole; A method of forming a second vertical hole vertically penetrating each of the plurality of pattern portions in the second structure; A method of forming a second horizontal hole by recessing the second insulating layer around the second vertical hole of the second structure to form a second recess portion and removing the second insulating layer from the second pattern extension portion; A method of forming a third recess portion by recessing the first insulating layer, the first gate insulating layer, and the first channel material layer exposed by the second vertical hole; A method of forming a second gate insulating layer on an inner surface of the second vertical hole including surfaces of the second and third recess portions and an inner surface of the second horizontal hole; A method of forming a read word line extending horizontally on the second gate insulating layer within the second recess portion and the second horizontal hole; A method for manufacturing a capacitorless 3D DRAM device is provided, comprising: forming a second channel material layer on the second gate insulating layer and the read word line exposed on the inner surface of the second vertical hole; defining a second channel layer pattern from the second channel material layer to define a read transistor including the second channel layer pattern and the second gate insulating layer; and forming a read bit line extending in a vertical direction at a position corresponding to the second vertical hole.

[0035] The first insulating layer may include silicon nitride, the second insulating layer may include silicon oxide, and the buffer layer may include silicon.

[0036] The separation layer may include silicon oxide having a first density, and the second insulating layer may include silicon oxide having a second density less than the first density.

[0037] The step of defining the above writing transistor may include the step of forming a material layer for a writing word line in the first recess portion and the inside of the first horizontal hole and on the inner surface of the first vertical hole; the step of removing a portion formed on the inner surface of the first vertical hole from the material layer for the writing word line; and the step of forming a first filling insulating layer that fills the first vertical hole.

[0038] After the step of removing a portion formed on the inner surface of the first vertical hole in the material layer for the writing word line, the step of recessing a portion of the buffer layer exposed by the first vertical hole may be further included.

[0039] The step of forming the write bit line may include the step of etching the first filling insulating layer at a position corresponding to the first vertical hole of the second structure to form a first through hole; and the step of forming the write bit line within the first through hole.

[0040] The step of forming the read word line may include the step of forming an electrode material layer filling the second recessed portion and the second horizontal hole on the second gate insulating layer; and the step of removing a portion of the electrode material layer other than a portion disposed within the second recessed portion and the second horizontal hole.

[0041] After the step of forming the second channel material layer, the method may further include the step of forming a second filling insulating layer on the second channel material layer that fills the third recessed portion and the second vertical hole; the step of forming a second through hole in the second filling insulating layer at a position corresponding to the second vertical hole; the step of recessing the buffer layer and the second channel material layer exposed by the second through hole; and the step of forming a third filling insulating layer that fills the second through hole.

[0042] The step of forming the read bit line may include the step of forming a third through hole by etching the third filling insulating layer or the second and third filling insulating layers at a position corresponding to the second vertical hole of the second structure; and the step of forming the read bit line within the third through hole.

[0043] A portion of the first insulating layer may remain and be disposed between the first channel material layer of the write transistor and the read word line connected to the read transistor.

[0044] The laminate may include a structure in which the laminated structure is repeatedly laminated, and a plurality of write transistors corresponding to the write transistor may be laminated while being spaced apart from each other in the vertical direction, and a plurality of read transistors corresponding to the read transistor may be laminated while being spaced apart from each other in the vertical direction, and the write bit line may be commonly connected to a plurality of write transistors spaced apart from each other in the vertical direction, and the read bit line may be commonly connected to a plurality of read transistors spaced apart from each other in the vertical direction.

[0045] According to another embodiment of the present invention, a capacitorless 3D DRAM device is provided, comprising: a write bit line extending in a vertical direction; a write word line extending in a horizontal direction; a write transistor connected to the write bit line and the write word line, the write transistor defined by a first channel material layer, a first gate insulating layer, and a portion of the write word line; a read bit line extending in a vertical direction; a read word line extending in a horizontal direction; and a read transistor connected to the read bit line and the read word line, the read transistor defined by a second channel layer pattern and a second gate insulating layer, wherein the write transistor and the read transistor constitute one memory cell, and the write word line and the read word line connected to the one memory cell are arranged at different heights.

[0046] The above read word line may be positioned at a higher position than the above write word line.

[0047] The above write word line may include a line-shaped extension portion extending in a line shape in a direction orthogonal to the direction connecting the write transistor and the read transistor; and a protruding extension portion protruding and extending from the line-shaped extension portion in a direction parallel to the direction connecting the write transistor and the read transistor.

[0048] The read word line may include a line-shaped extension portion extending in a line shape in a direction orthogonal to a direction connecting the write transistor and the read transistor; and a protruding extension portion protruding and extending from the line-shaped extension portion in a direction parallel to the direction connecting the write transistor and the read transistor.

[0049] A first insulating layer pattern portion may be disposed between the first channel material layer of the write transistor and the read word line connected to the read transistor, and between the first gate insulating layer and the second gate insulating layer.

[0050] The first insulating layer pattern portion may be arranged at the same height as the write word line by contacting a side of the write word line.

[0051] The second channel layer pattern may include a first portion connected to the read bit line and extending in a horizontal direction; and a second portion extending in a direction having a given angle with respect to the first portion.

[0052] A plurality of write transistors corresponding to the write transistor may be stacked vertically spaced apart from each other, a plurality of read transistors corresponding to the read transistor may be stacked vertically spaced apart from each other, the write bit line may be commonly connected to a plurality of write transistors spaced apart from each other in the vertical direction, and the read bit line may be commonly connected to a plurality of read transistors spaced apart from each other in the vertical direction.

[0053] According to embodiments of the present invention, a capacitorless three-dimensional DRAM device can be implemented that can significantly improve the three-dimensional integration, secure excellent performance, reduce the unit cell size, and facilitate the manufacturing process. In particular, since the capacitorless three-dimensional DRAM device according to an embodiment of the present invention has a structure in which a write bit line and a read bit line extend vertically and a write word line and a read word line extend horizontally, it can be easily manufactured into a three-dimensional stacked structure in which cells are connected in the vertical direction. According to such embodiments of the present invention, it is easy to manufacture a high-integration, high-capacity device, and mass production can be possible. In addition, by allowing two adjacent memory cells to share a write bit line and also allowing two adjacent memory cells to share a read bit line, the size of a unit cell (i.e., a unit memory area) can be reduced. According to an example, the three-dimensional DRAM device may be a 2T0C type DRAM device or may be configured to include the same.

[0054] According to embodiments of the present invention, a capacitorless three-dimensional DRAM device can be implemented that can significantly improve the three-dimensional integration, secure excellent performance, and have an easy manufacturing process. In particular, since the capacitorless three-dimensional DRAM device according to an embodiment of the present invention has a structure in which a write bit line and a read bit line extend vertically and a write word line and a read word line extend horizontally, it can be easily manufactured into a three-dimensional stacked structure in which cells are connected in the vertical direction. According to such embodiments of the present invention, it is easy to manufacture a high-integration, high-capacity device, and mass production can be possible. In one example, the three-dimensional DRAM device may be a 2T0C type DRAM device or may be configured to include the same.

[0055] In addition, according to one embodiment of the present invention, a line-shaped extension portion crossing a cell separator (buried material) can be formed using a layout, thereby easily forming a horizontally extended write word line and a read word line. In addition, according to one embodiment of the present invention, by arranging a first insulating layer pattern portion between a first channel material layer of a write transistor and a read word line connected to a read transistor, a coupling phenomenon between the first channel material layer and the read word line can be prevented.

[0056] However, the effects of the present invention are not limited to the above effects, and can be expanded in various ways without departing from the technical spirit and scope of the present invention.

[0057] FIG. 1a, FIG. 2a, FIG. 3a, FIG. 4a, FIG. 5a, FIG. 6a, FIG. 7a, FIG. 8a, FIG. 9a, FIG. 10a, FIG. 11a, FIG. 12a, FIG. 13a, FIG. 14a, FIG. 15a, FIG. 16a, FIG. 17a, FIG. 18a, FIG. 19a, FIG. 20a, FIG. 21a, FIG. 22a, FIG. 23a, FIG. 24a, FIG. 25a, FIG. 26a, FIG. 27a, FIG. 28a, FIG. 29a, FIG. 30a, FIG. 31a, FIG. 32a, FIG. 33a, and FIG. 34a are cross-sectional views illustrating a method for manufacturing a capacitorless three-dimensional DRAM (dynamic random access memory) device according to one embodiment of the present invention.

[0058] FIG. 1b, FIG. 2b, FIG. 3b, FIG. 4b, FIG. 5b, FIG. 6b, FIG. 7b, FIG. 8b, FIG. 9b, FIG. 10b, FIG. 11b, FIG. 12b, FIG. 13b, FIG. 14b, FIG. 15b, FIG. 16b, FIG. 17b, FIG. 18b, FIG. 19b, FIG. 20b, FIG. 21b, FIG. 22b, FIG. 23b, FIG. 24b, FIG. 25b, FIG. 26b, FIG. 27b, FIG. 28b, FIG. 29b, FIG. 30b, FIG. 31b, FIG. 32b, FIG. 33b and FIG. 34b are drawings for exemplarily explaining a method for manufacturing a capacitorless 3D DRAM device according to one embodiment of the present invention.

[0059] FIG. 1c, FIG. 2c, FIG. 3c, FIG. 4c, FIG. 5c, FIG. 6c, FIG. 7c, FIG. 8c, FIG. 9c, FIG. 10c, FIG. 11c, FIG. 12c, FIG. 13c, FIG. 14c, FIG. 15c, FIG. 16c, FIG. 17c, FIG. 18c, FIG. 19c, FIG. 20c, FIG. 21c, FIG. 22c, FIG. 23c, FIG. 24c, FIG. 25c, FIG. 26c, FIG. 27c, FIG. 28c, FIG. 29c, FIG. 30c, FIG. 31c, FIG. 32c, FIG. 33c and FIG. 34c are cross-sectional views illustrating a method for manufacturing a capacitorless three-dimensional DRAM device according to an embodiment of the present invention.

[0060] FIGS. 35 to 37 are drawings for exemplarily explaining a capacitorless 3D DRAM device according to one embodiment of the present invention.

[0061] FIG. 38a, FIG. 39a, FIG. 40a, FIG. 41a, FIG. 42a, FIG. 43a, FIG. 44a, FIG. 45a, FIG. 46a, FIG. 47a, FIG. 48a, FIG. 49a, FIG. 50a, FIG. 51a, FIG. 52a, FIG. 53a, FIG. 54a, FIG. 55a, FIG. 56a, FIG. 57a, FIG. 58a, FIG. 59a, and FIG. 60a are cross-sectional views illustrating a method for manufacturing a capacitorless three-dimensional dynamic random access memory (DRAM) device according to one embodiment of the present invention.

[0062] FIG. 38b, FIG. 39b, FIG. 40b, FIG. 41b, FIG. 42b, FIG. 43b, FIG. 44b, FIG. 45b, FIG. 46b, FIG. 47b, FIG. 48b, FIG. 49b, FIG. 50b, FIG. 51b, FIG. 52b, FIG. 53b, FIG. 54b, FIG. 55b, FIG. 56b, FIG. 57b, FIG. 58b, FIG. 59b and FIG. 60b are cross-sectional views for exemplarily explaining a method for manufacturing a capacitorless three-dimensional DRAM device according to one embodiment of the present invention.

[0063] FIG. 38c, FIG. 39c, FIG. 40c, FIG. 41c, FIG. 42c, FIG. 43c, FIG. 44c, FIG. 45c, FIG. 46c, FIG. 47c, FIG. 48c, FIG. 49c, FIG. 50c, FIG. 51c, FIG. 52c, FIG. 53c, FIG. 54c, FIG. 55c, FIG. 56c, FIG. 57c, FIG. 58c, FIG. 59c and FIG. 60c are cross-sectional views illustrating a method for manufacturing a capacitorless three-dimensional DRAM device according to one embodiment of the present invention.

[0064] FIGS. 61 to 64 are drawings for exemplarily explaining a capacitorless 3D DRAM device according to one embodiment of the present invention.

[0065] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings.

[0066] The embodiments of the present invention described below are provided to more clearly explain the present invention to a person having ordinary skill in the art, and the scope of the present invention is not limited by the following embodiments, and the following embodiments can be modified in various other forms.

[0067] The terminology used herein is used to describe particular embodiments and is not intended to limit the present invention. The singular forms used herein may include the plural forms unless the context clearly dictates otherwise. In addition, the terms "comprise" and / or "comprising" used herein specify the presence of a stated feature, step, number, operation, element, element, and / or group thereof, but do not exclude the presence or addition of one or more other features, steps, numbers, operations, elements, elements, and / or groups thereof. In addition, the term "connected" used herein not only means that certain elements are directly connected, but also includes a concept that indirectly connects elements by interposing another element between them.

[0068] Furthermore, in the description of this specification, terms such as "first" and "second," "upper" or "top," and "lower" or "bottom" are used to distinguish elements, and are not used to limit the elements themselves or to imply a specific order. Rather, they imply a relative positional relationship, and do not limit specific cases in which another element is introduced into direct contact with the element or at an interface between the elements. The same interpretation may be applied to other expressions describing the relationship between components.

[0069] In addition, when it is said in this specification that a certain element is located "on" another element, this includes not only cases where a certain element is in contact with another element, but also cases where another element exists between the two elements. The term "and / or" as used in this specification includes any one of the listed items and any and all combinations of one or more of them. In addition, terms of degree such as "about", "substantially", etc. as used in this specification are used to mean a range of or close to the numerical value or degree, taking into account inherent manufacturing and material tolerances, and are used to prevent infringers from unfairly using the disclosure that mentions exact or absolute numbers provided to help the understanding of this specification.

[0070] Hereinafter, embodiments of the present invention will be described in detail with reference to the attached drawings. The sizes and thicknesses of areas or parts illustrated in the attached drawings may be somewhat exaggerated for clarity and convenience of explanation. Like reference numbers designate like components throughout the detailed description.

[0071] FIGS. 1A to 34C are diagrams for exemplarily explaining a method for manufacturing a capacitorless three-dimensional DRAM (dynamic random access memory) device according to an embodiment of the present invention. The capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device (three-dimensional stacked DRAM device) having a gain cell structure. For example, the capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device having a 2T0C (two transistor zero capacitor) cell structure.

[0072] In FIGS. 1A to 34C, the same drawing numbers (e.g., FIG. 1 in FIGS. 1A, 1B, and 1C) indicate the same steps. FIG. 1a, FIG. 2a, FIG. 3a, FIG. 4a, FIG. 5a, FIG. 6a, FIG. 7a, FIG. 8a, FIG. 9a, FIG. 10a, FIG. 11a, FIG. 12a, FIG. 13a, FIG. 14a, FIG. 15a, FIG. 16a, FIG. 17a, FIG. 18a, FIG. 19a, FIG. 20a, FIG. 21a, FIG. 22a, FIG. 23a, FIG. 24a, FIG. 25a, FIG. 26a, FIG. 27a, FIG. 28a, FIG. 29a, FIG. 30a, FIG. 31a, FIG. 32a, FIG. 33a, and FIG. 34a are cross-sectional views taken along the XZ plane. Figures 1b, 2b, 3b, 4b, 5b, 6b, 7b, 8b, 9b, 10b, 11b, 12b, 13b, 14b, 15b, 16b, 17b, 18b, 19b, 20b, 21b, 22b, 23b, 24b, 25b, 26b, 27b, 28b, 29b, 30b, 31b, 32b, 33b, and 34b are plan views viewed from above (i.e., top-view) or cross-sectional views cut along the XY plane (i.e., Z-cut view). FIG. 1c, FIG. 2c, FIG. 3c, FIG. 4c, FIG. 5c, FIG. 6c, FIG. 7c, FIG. 8c, FIG. 9c, FIG. 10c, FIG. 11c, FIG. 12c, FIG. 13c, FIG. 14c, FIG. 15c, FIG. 16c, FIG. 17c, FIG. 18c, FIG. 19c, FIG. 20c, FIG. 21c, FIG. 22c, FIG. 23c, FIG. 24c, FIG. 25c, FIG. 26c, FIG. 27c, FIG. 28c, FIG. 29c, FIG. 30c, FIG. 31c, FIG. 32c, FIG. 33c, and FIG. 34c are cross-sectional views taken along the YZ plane.

[0073] Referring to FIGS. 1A to 1C, a laminate unit (S10) can be formed on a predetermined substrate (not shown). The material of the substrate can be selected from various materials. The substrate can include a semiconductor material or an insulating material. The substrate can include a semiconductor wafer. The substrate can also include a bulk silicon substrate, a silicon-on-insulator (SOI) substrate, a germanium substrate, a germanium-on-insulator (GOI) substrate, a silicon-germanium substrate, or a substrate formed by an epitaxial growth process.

[0074] An insulating material layer (NM10) can be formed on the above substrate. The insulating material layer (NM10) can be formed by a deposition process. The insulating material layer (NM10) can include an insulating material such as silicon oxide. A plurality of layers can be sequentially stacked on the insulating material layer (NM10). The plurality of layers can form an upper stacked portion (S2). An upper first channel material layer (CL20), an upper first gate insulating layer (GN20), an upper intermediate layer (ML20), an upper buffer layer (BF20), and an upper separation layer (SP20) can be deposited on the insulating material layer (NM10). The upper stacked portion (S2) may be configured with a stacked structure including an upper first channel material layer (CL20), an upper first gate insulating layer (GN20), an upper intermediate layer (ML20), an upper buffer layer (BF20), and an upper separation layer (SP20).

[0075] The upper intermediate layer (ML20) may be an insulating layer and may be deposited with a different material from the insulating material layer (NM10). The upper intermediate layer (ML20) may be formed as a layer having a different etching rate from the insulating material layer (NM10) and the upper separation layer (SP20) in a subsequent etching process step. For example, the upper intermediate layer (ML20) may be formed of silicon nitride (e.g., SiN). x ) may be formed of or include it.

[0076] An upper buffer layer (BF20) can be deposited on the upper intermediate layer (ML20). The upper buffer layer (BF20) can be formed of a layer of a different material from the insulating material layer (NM10), the upper intermediate layer (ML20), and the upper separation layer (SP20). The upper buffer layer (BF20) can be formed as a layer having a different etching rate from the insulating material layer (NM10), the upper intermediate layer (ML20), and the upper separation layer (SP20) in a subsequent etching process step. The upper buffer layer (BF20), the insulating material layer (NM10), the upper intermediate layer (ML20), and the upper separation layer (SP20) can have etching selectivities with respect to each other. For example, the upper buffer layer (BF20) can include silicon. As a specific example, the upper buffer layer (BF20) can be formed by including a polysilicon layer.

[0077] An upper separation layer (SP20) can be deposited on the upper buffer layer (BF20). The upper buffer layer (BF20) may be an insulating layer. The upper separation layer (SP20) may be deposited as a layer of a different material from the upper intermediate layer (ML20) and the upper buffer layer (BF20). The upper separation layer (SP20) may be formed as a layer having a different etching rate from the insulating material layer (NM10), the upper intermediate layer (ML20), and the upper buffer layer (BF20) in a subsequent etching process step. For example, the upper separation layer (SP20) may be formed to include silicon oxide. In this case, the upper separation layer (SP20) may be formed to include a silicon oxide layer that is denser than the insulating material layer (NM10). The insulating material layer (NM10) may be formed to include porous silicon oxide. The insulating material layer (NM10) may include silicon oxide having a first density, and the upper separation layer (SP20) may include silicon oxide having a second density greater than the first density.

[0078] The thickness of the upper buffer layer (BF20) may be thinner than each of the upper intermediate layer (ML20) and the upper separation layer (SP20). The thickness of the insulating material layer (NM10) may be thicker than each of the upper intermediate layer (ML20) and the upper separation layer (SP20).

[0079] Before forming the insulating material layer (NM10) and the upper laminated portion (S2) on the substrate, a lower laminated portion (S1) may be further formed on the substrate. After the lower laminated portion (S1) is formed first, the insulating material layer (NM10) and the upper laminated portion (S2) may be sequentially formed thereon. The lower laminated portion (S1) may have a structure substantially the same as the structure of the upper laminated portion (S2) inverted vertically. The lower laminated portion (S1) may have a symmetrical (upper and lower symmetrical) structure with the upper laminated portion (S2) with the insulating material layer (NM10) interposed therebetween. The insulating material layer (NM10) may be a type of intermediate separation layer.

[0080] The lower stacked portion (S1) may include a lower separation layer (SP10), a lower buffer layer (BF10), a lower intermediate layer (ML10), a lower first gate insulating layer (GN10), and a lower first channel material layer (CL10) sequentially stacked from below. The lower separation layer (SP10), the lower buffer layer (BF10), the lower intermediate layer (ML10), the lower first gate insulating layer (GN10), and the lower first channel material layer (CL10) may be sequentially formed, and an insulating material layer (NM10) may be formed on the lower first channel material layer (CL10). The lower first channel material layer (CL10), the lower first gate insulating layer (GN10), the lower intermediate layer (ML10), the lower buffer layer (BF10), and the lower separation layer (SP10) may each have substantially the same material composition as the upper first channel material layer (CL20), the upper first gate insulating layer (GN20), the upper intermediate layer (ML20), the upper buffer layer (BF20), and the upper separation layer (SP20), respectively.

[0081] The lower laminate (S1), the insulating material layer (NM10), and the upper laminate (S2) can form a single laminate unit (S10) in which a plurality of layers are laminated. A plurality of laminate units (S10) can be formed to be laminated on the substrate. The processes for depositing individual layers constituting the laminate unit (S10) can be performed using various deposition techniques. For example, the above-described layers can be deposited using thermal chemical vapor deposition (thermal CVD), plasma enhanced CVD, physical vapor deposition (PVD), or atomic layer deposition (ALD) techniques.

[0082] Referring to FIGS. 2A to 2C, the laminate unit (S10 of FIG. 1A) may be patterned to form a patterned laminate (S11) having a plurality of pattern portions (SP1). The plurality of pattern portions (SP1) may have a shape extending in a first direction, for example, the X-axis direction, and may be spaced apart from each other in a second direction orthogonal (perpendicular) to the first direction, for example, the Y-axis direction. Empty spaces may be provided on both sides of the pattern portions (SP1) along the second direction. The plurality of pattern portions (SP1) may be spaced apart from each other in the Y-axis direction and arranged parallel to each other in the X-axis direction. This step may be a patterning step for dividing areas in which cells are to be formed, i.e., a cell patterning step.

[0083] The pattern portion (SP1) may include an upper first channel material layer (CL21), an upper first gate insulating layer (GN21), an upper intermediate layer (ML21), an upper buffer layer (BF21), and an upper separation layer (SP21). The pattern portion (SP1) may include an insulating material layer (NM11). In addition, the pattern portion (SP1) may further include a lower separation layer (SP11), a lower buffer layer (BF11), a lower intermediate layer (ML11), a lower first gate insulating layer (GN11), and a lower first channel material layer (CL11). Each of the lower separation layer (SP11), the lower buffer layer (BF11), the lower intermediate layer (ML11), the lower first gate insulating layer (GN11), the lower first channel material layer (CL11), the insulating material layer (NM11), the upper first channel material layer (CL21), the upper first gate insulating layer (GN21), the upper intermediate layer (ML21), the upper buffer layer (BF21), and the upper separation layer (SP21) may be a patterned material layer.

[0084] For the patterning process of FIGS. 2A to 2C, a first mask pattern (M10) disposed on a laminate unit (S10 of FIG. 1A) may be used. The first mask pattern (M10) may have a predetermined pattern structure. The first mask pattern (M10) may be, for example, a photoresist pattern. After the patterning process, the first mask pattern (M10) may be removed.

[0085] Referring to FIGS. 3A to 3C, a structure (S20) including the patterned laminate (S11 of FIG. 2A) and the embedded material (NM1) can be formed by filling a filling material (NM1) between a plurality of pattern portions (SP1). In other words, a structure (S20) including the patterned laminate (S11 of FIG. 2A) and the embedded material (NM1) can be formed by filling the empty spaces on both sides of the plurality of pattern portions (SP1) with the filling material (NM1).

[0086] The buried material (NM1) may have the same (or substantially the same) height as the pattern portion (SP1). The buried material (NM1) may be, for example, an insulating material. In this case, the buried material (NM1) may be referred to as an 'insulating material layer' or an 'insulating material layer pattern'. The buried material (NM1) may be formed of the same material as the lower intermediate layer (ML11) and the upper intermediate layer (ML21). As a non-limiting example, the buried material (NM1) may be silicon nitride (e.g., SiN x ) or silicon nitride (e.g., SiN) x ) can be formed. Since the buried material (NM1) and a portion of the lower intermediate layer (ML11) and the upper intermediate layer (ML21) may be etched together in a subsequent process, it may be desirable to form them from the same material (see FIGS. 5a to 5c and FIGS. 16a to 16c).

[0087] Referring to FIGS. 4A to 4C, a first vertical hole (H10) may be formed to vertically penetrate each of a plurality of pattern portions (SP1) in a structure (S20). Each of the first vertical holes (H10) may be formed to penetrate from the upper buffer layer (SP21) at the top of the pattern portion (SP1) to the lower buffer layer (SP11) at the bottom in a predetermined region of the structure (S20). The first vertical hole (H10) may correspond to a region where a write bit line will be formed later. The plurality of first vertical holes (H10) may be formed to be spaced apart from each other in the Y-axis direction.

[0088] To form the first vertical hole (H10), a second mask pattern (M20) may be used. The second mask pattern (M20) may have a predetermined aperture pattern. The second mask pattern (M20) may be, for example, a photoresist pattern. After the formation of the first vertical hole (H10), the second mask pattern (M20) may be removed. However, the timing of removing the second mask pattern (M20) may vary. For example, the second mask pattern (M20) may be removed after the recess process described in FIG. 5A.

[0089] Referring to FIGS. 5A to 5C, a first recessed portion (R1) can be formed by recessing the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1) around the first vertical hole (H10) of the structure (S20). By using a wet etching process using a wet etchant having etch selectivity to the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1), a portion of each of the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1) can be selectively recessed (etched). At this time, a portion of the insulating material layer (NM11) exposed by the first vertical hole (H10) can also be slightly etched. The first gate insulating layer (GN11 / GN21) and the buffer layer (BF11 / BF21) may be exposed by the first recess portion (R1). Fig. 5b may be a cross-sectional view taken along line (A) of Figs. 5a and 5b. Fig. 5c may be a cross-sectional view in an area where the first recess portion (R1) is formed in Fig. 5b.

[0090] According to one embodiment, in the step of forming the first recess portion (R1), a plurality of first recess portions (R1) may be connected in the second direction, i.e., the Y-axis direction. This may be to ensure that a write word line to be formed in the first recess portion (R1) later has a shape extending in the Y-axis direction.

[0091] Referring to FIGS. 6A to 6C, a material layer (WM1) for a writing word line can be formed on the inside of the first recessed portion (R1 of FIG. 5A) and the inner surface of the first vertical hole (H10). The material layer (WM1) for a writing word line can include at least one of a metal, a metal compound, and conductive silicon.

[0092] Referring to FIGS. 7A to 7C, a portion formed on the inner surface of the first vertical hole (H10) in the material layer (WM1) for the write word line can be removed. After forming a third mask pattern (M30) having an opening pattern that exposes an area corresponding to the first vertical hole (H10) on the structure (S20), a dry etching process using the third mask pattern (M30) as an etching mask can be performed to remove a portion formed on the inner surface of the first vertical hole (H10) in the material layer (WM1) for the write word line. In addition, a portion of the material layer (WM1) for the write word line formed in the first recessed portion (R1 of FIG. 5A) can be recessed. Therefore, the material layer (WM1) for the write word line remaining in this step can have a structure that is somewhat recessed with respect to the first vertical hole (H10). The third mask pattern (M30) may be, for example, a photoresist pattern. Thereafter, the third mask pattern (M30) can be removed.

[0093] Referring to FIGS. 8A to 8C, a first filling insulation layer (FL1) filling the first vertical hole (H10 of FIG. 7A) may be formed. The first filling insulation layer (FL1) may be a type of gap fill material layer. As a non-limiting example, the first filling insulation layer (FL1) may include silicon oxide or may be formed of silicon oxide. The first filling insulation layer (FL1) may be formed to fill the first vertical hole (H10 of FIG. 7A) and fill an empty space around the material layer (WM1) for the write word line.

[0094] Referring to FIGS. 9A to 9C, a fourth mask pattern (M40) may be formed on the structure (S20). The fourth mask pattern (M40) may have an opening pattern (opening) extending in the Y-axis direction while exposing the central portion of the first filling insulating layer (FL1). The fourth mask pattern (M40) may be said to have a slit-shaped opening pattern. The fourth mask pattern (M40) may be, for example, a photoresist pattern.

[0095] Referring to FIGS. 10A to 10C, a first etching portion (T10) may be formed across the central portion of the material layer for the write word line (WM1 of FIG. 9B) and the central portion of the first filling insulating layer (FL1) in the second direction, i.e., the Y-axis direction, using the fourth mask pattern (M40) as an etching mask, thereby defining a write word line (WWL) divided from the material layer for the write word line (WM1 of FIG. 9B). The first etching portion (T10) may be formed through a dry etching process. The first etching portion (T10) may be referred to as a type of slit-shaped opening or trench. FIG. 10C is a cross-sectional view taken along the YZ plane in the area where the first etching portion (T10) is formed. Thereafter, the fourth mask pattern (M40) may be removed.

[0096] Referring to FIGS. 11A to 11C, the structure of FIGS. 10A to 10C shows a state in which the fourth mask pattern (M40) has been removed. A write word line (WWL) may be defined on each side of the first etching portion (T10). The two write word lines (WWL) illustrated may be used as separate write word lines (WWL).

[0097] Referring to FIGS. 12A to 12C, a first gap-fill insulating layer (GF1) filling the first etched portion (T10 of FIG. 11A) may be formed. The first gap-fill insulating layer (GF1) may be formed of at least one of various insulating materials. As a non-limiting example, the first gap-fill insulating layer (GF1) may include silicon oxide or may be formed of silicon oxide.

[0098] As described above, by using a method as illustrated in FIGS. 6A to 12C, a write word line (WWL) extending horizontally within the first recess portion (R1 of FIG. 5A) can be formed, thereby defining a write transistor including a first channel material layer (CL11 / CL21), a first gate insulating layer (GN11 / GN21), and a portion of the write word line (WWL). In the embodiment of FIG. 12A, a lower write transistor structure including a lower first channel material layer (CL11), a lower first gate insulating layer (GN11), and a portion of the write word line (WWL) and an upper write transistor structure including an upper first channel material layer (CL21), an upper first gate insulating layer (GN21), and a portion of the write word line (WWL) can be defined. However, the method of defining the write transistor is exemplary and may be varied in various ways.

[0099] Then, using a method as illustrated in FIGS. 13A to 14C, a write bit line (WBL in FIG. 14A) extending vertically can be formed at a position corresponding to the first vertical hole (H10 in FIG. 4A). For reference, the expression "corresponding" in this specification may mean the same thing, but may also be a concept encompassing things that are generally the same or similar. This can be equally applied throughout this specification.

[0100] Referring to FIGS. 13A to 13C, a first filling insulating layer (FL1) and a first gap-fill insulating layer (GF1) may be etched at a position corresponding to the first vertical hole (H10 of FIG. 4A) of the structure (S20) to form a first through hole (H15). To form the first through hole (H15), a fifth mask pattern (M50) may be used. The fifth mask pattern (M50) may have a predetermined opening pattern. The fifth mask pattern (M50) may be, for example, a photoresist pattern. After the first through hole (H15) is formed, the fifth mask pattern (M50) may be removed. However, the timing of removing the fifth mask pattern (M50) may vary. For example, the fifth mask pattern (M50) may be removed after the formation process of the write bit line (WBL) described in FIG. 14a.

[0101] Referring to FIGS. 14A to 14C, a write bit line (WBL) can be formed within the first through hole (H15 of FIG. 13A). The write bit line (WBL) can include, for example, at least one of a metal, a metal compound, and conductive silicon.

[0102] Referring to FIGS. 15A to 15C, a second vertical hole (H20) may be formed in the structure (S20) to vertically penetrate each of the plurality of pattern portions (SP1). The second vertical hole (H20) may be formed in an area where a read transistor is to be formed, i.e., an area where a read transistor is to be formed.

[0103] Each of the second vertical holes (H20) may be formed to penetrate from the upper buffer layer (SP21) at the top of the pattern portion (SP1) to the lower buffer layer (SP11) at the bottom in a predetermined area of ​​the structure (S20). The second vertical hole (H20) may correspond to an area where a read bit line will be formed later. However, the second vertical hole (H20) may be formed to have a diameter (size) somewhat smaller than the read bit line to be formed later. A plurality of second vertical holes (H20) may be formed to be spaced apart from each other in the Y-axis direction. Fig. 15c may be a cross-sectional view along the YZ plane at a portion where the second vertical hole (H20) is formed in Fig. 15b.

[0104] To form the second vertical hole (H20), a sixth mask pattern (M60) may be used. The sixth mask pattern (M60) may have a predetermined opening pattern. The sixth mask pattern (M60) may be, for example, a photoresist pattern. After the formation of the second vertical hole (H20), the sixth mask pattern (M60) may be removed. However, the timing of removing the sixth mask pattern (M60) may vary. For example, the sixth mask pattern (M60) may be removed after the recess process described in FIG. 16a or after the recess process described in FIG. 17a.

[0105] Referring to FIGS. 16a to 16c, a second recess portion (R2) can be formed by recessing the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1) around the second vertical hole (H20) of the structure (S20). By using a wet etching process using a wet etchant having etch selectivity to the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1), a portion of each of the upper intermediate layer (ML21), the lower intermediate layer (ML11), and the buried material (NM1) can be selectively recessed (etched). At this time, a portion of the insulating material layer (NM11) exposed by the second vertical hole (H20) can also be slightly etched. Here, slightly etching (recessing) the insulating material layer (NM11) portion may be necessary to form an insulating region in this portion later. The first gate insulating layer (GN11 / GN21) and the buffer layer (BF11 / BF21) may be exposed by the second recess portion (R2). Fig. 16c may be a cross-sectional view of the area where the second recess portion (R2) is formed in Fig. 16b.

[0106] According to one embodiment, in the step of forming the second recess portion (R2), a plurality of second recess portions (R2) may be connected in the second direction, i.e., the Y-axis direction. This may be to ensure that a read word line to be formed in the second recess portion (R2) later has a shape extending in the Y-axis direction.

[0107] Referring to FIGS. 17a to 17c, the first channel material layer (CL11 / CL21) and the first gate insulating layer (GN11 / GN21) exposed by the second vertical hole (H20) can be recessed to form a third recessed portion (R3). The first channel material layer (CL11 / CL21) exposed by the second vertical hole (H20) can be recessed using a wet etching process, and in this process, the first gate insulating layer (GN11 / GN21) having a thin thickness can also be recessed. In addition, the portion of the insulating material layer (NM11) exposed by the second vertical hole (H20) can also be etched (recessed) slightly more.

[0108] Referring to FIGS. 18A to 18C, a second gate insulating layer (GL20) may be formed on the inner surface of the second vertical hole (H20) including the surfaces of the second and third recessed portions (R2, R3 of FIG. 17A). The second gate insulating layer (GL20) may be formed to include at least one of various insulating materials and may be formed, for example, by an atomic layer deposition (ALD) process. The second gate insulating layer (GL20) may be formed conformally along the shape of the surface on which the second gate insulating layer (GL20) is deposited. The second gate insulating layer (GL20) may be formed to have a thickness thinner than each of the lower first gate insulating layer (GN11) and the upper first gate insulating layer (GN21). Therefore, a read transistor to be formed later may have a lower threshold voltage (Vth) than a write transistor.

[0109] Referring to FIGS. 19A to 19C, an electrode material layer (EL1) may be formed on the second gate insulating layer (GL20) to fill the end region of the second recessed portion (R2 of FIG. 17A). The electrode material layer (EL1) may be formed on the entire surface of the second gate insulating layer (GL20) and may have a thickness that fills the edge region, i.e., the end region, of the second recessed portion (R2 of FIG. 17A). The electrode material layer (EL1) may be formed conformally along the surface shape of the second gate insulating layer (GL20).

[0110] Referring to FIGS. 20a to 20c, the electrode member (EM1) remaining in the end region of the second recessed portion (R2 in FIG. 17a) can be formed from the electrode material layer (EL1 in FIG. 19a) by removing the remaining portion except for the portion disposed in the end region of the second recessed portion (R2 in FIG. 17a) from the electrode material layer. For example, a wet etching process capable of removing a metal or a metal compound can be used to remove the remaining portion, leaving only the electrode member (EM1) provided in the end region of the second recessed portion (R2 in FIG. 17a) by utilizing the difference in thickness of each region of the electrode material layer (EL1 in FIG. 19a). A specific method of forming the electrode member (EM1) is not limited to the method described in FIGS. 19a to 20c, and may vary depending on the case.

[0111] Referring to FIGS. 21A to 21C, a second channel material layer (CM20) can be formed on the second gate insulating layer (GL20) and the electrode member (EM1) exposed on the inner surface of the second vertical hole (H20 of FIG. 18A). The second channel material layer (CM20) can be formed, for example, by an ALD process. The second channel material layer (CM20) can be formed conformally along the surface shape of the second gate insulating layer (GL20) and the electrode member (EM1).

[0112] Referring to FIGS. 22a to 22c, portions formed on the side surfaces of the separation layers (SP11, SP21) and the buffer layers (BF11, BF21) in the second channel material layer (CM20) and the second gate insulating layer (GL20) formed on the inner surface of the second vertical hole (H20 of FIG. 18a) can be removed. For this process, a seventh mask pattern (M70) can be used. The seventh mask pattern (M70) can have a predetermined opening pattern. The seventh mask pattern (M70) can be, for example, a photoresist pattern. For example, the seventh mask pattern (M70) can be the same pattern as the sixth mask pattern (M60) of FIG. 15a. After the step of FIG. 22a, the sixth mask pattern (M60) can be removed.

[0113] Referring to FIGS. 23a to 23c, a second filling insulating layer (FL2) can be formed on the second channel material layer (CM20) to fill the second and third recessed portions (R2, R3 of FIG. 17a) and the second vertical hole (H20 of FIG. 18a). As a non-limiting example, the second filling insulating layer (FL2) can include silicon oxide or be formed of silicon oxide.

[0114] Referring to FIGS. 24a to 24c, a second through hole (H25) can be formed at a position corresponding to the second vertical hole (H20 of FIG. 18a) of the second filling insulating layer (FL2). The second through hole (H25) can be formed through a dry etching process. The buffer layers (BF11, BF21) can be exposed by the second through hole (H25). In addition, the second channel material layer (CM20) formed on the inner surface of the insulating material layer (NM11) may not be exposed. To form the second through hole (H25), an eighth mask pattern (M80) can be used. The eighth mask pattern (M80) can have a predetermined opening pattern. The eighth mask pattern (M80) can be, for example, a photoresist pattern.

[0115] Referring to FIGS. 25a to 25c, the buffer layers (BF11, BF21) exposed by the second through hole (H25) can be recessed. As a non-limiting example, the buffer layers (BF11, BF21) can be recessed through a selective wet etching process using ammonia water. In the process of recessing the buffer layers (BF11, BF21), the second gate insulating layer (GL20) can also be recessed. Alternatively, after recessing the buffer layers (BF11, BF21), the second gate insulating layer (GL20) can be recessed. By controlling the conditions of the etching process, the recess depths of the buffer layers (BF11, BF21) and the second gate insulating layer (GL20) can be adjusted.

[0116] Referring to FIGS. 26a to 26c, a portion of the second channel material layer (CM20) exposed by the process of FIG. 25a can be removed by recessing (etching). Then, the eighth mask pattern (M80) can be removed.

[0117] Referring to FIGS. 27a to 27c, a third through hole (H35) having a larger size than the second through hole (H25 of FIG. 26a) may be formed at a position corresponding to the second through hole (H25 of FIG. 26a), thereby removing a portion formed on the side of the insulating material layer (NM11) in the second channel material layer (CM20). The third through hole (H35) may correspond to an area where a read bit line is to be formed.

[0118] To form the third through hole (H35), a ninth mask pattern (M90) may be used. The ninth mask pattern (M90) may have a predetermined opening pattern. The ninth mask pattern (M90) may be, for example, a photoresist pattern. After the third through hole (H35) is formed, the ninth mask pattern (M90) may be removed. However, depending on the case, the timing of removing the ninth mask pattern (M90) may vary.

[0119] Referring to FIGS. 28a to 28c, a third filling insulating layer (FL3) may be formed to fill the third through hole (H35). The third filling insulating layer (FL3) may be a type of gap fill material layer. As a non-limiting example, the third filling insulating layer (FL3) may include silicon oxide or may be formed of silicon oxide. The third filling insulating layer (FL3) may be formed to fill the third through hole (H35) (H35 in FIG. 27a) and fill the empty space around it.

[0120] Referring to FIGS. 29A to 29C, a tenth mask pattern (M100) may be formed on the structure (S20). The tenth mask pattern (M100) may have an opening pattern (opening) extending in the Y-axis direction while exposing the central portion of the third filling insulating layer (FL3). The tenth mask pattern (M100) may be said to have a slit-shaped opening pattern. The tenth mask pattern (M100) may be, for example, a photoresist pattern.

[0121] Referring to FIGS. 30A to 30C, a second etching portion (T20) that crosses the central portion of the third filling insulating layer (FL3 of FIG. 29B), the central portion of the first filling insulating layer (FL1 of FIG. 29B), the central portion of the second channel material layer (CM20 of FIG. 29B), and the central portion of the electrode member (EM1 of FIG. 29B) in the second direction, i.e., the Y-axis direction, can be formed using the tenth mask pattern (M100) as an etching mask, thereby defining a read word line (RWL) divided from the electrode member (EM1 of FIG. 29B) and a second channel layer pattern (CP20) divided from the second channel material layer (CM20 of FIG. 29B). The second etching portion (T20) can be formed through a dry etching process. The second etching portion (T20) can be considered a type of slit-shaped opening or trench. Fig. 30c is a cross-sectional view along the YZ plane viewed from the area where the second etching portion (T20) is formed. Thereafter, the tenth mask pattern (M100) can be removed.

[0122] Referring to FIGS. 31A to 31C, the structure of FIGS. 30A to 30C shows a state in which the tenth mask pattern (M100) is removed. A read word line (RWL) and a second channel layer pattern (CP20) may be defined on each side of the second etching portion (T20). The two read word lines (RWL) illustrated may be used as separate read word lines (RWL). The read word lines (RWL) may be referred to as source electrode lines. In addition, the second gate insulating layer (GL20) may also be divided by the second etching portion (T20).

[0123] Referring to FIGS. 32a to 32c, a second gap-fill insulating layer (GF2) can be formed to fill the second etched portion (T20 of FIG. 31a). The second gap-fill insulating layer (GF2) can be formed of at least one of various insulating materials. As a non-limiting example, the second gap-fill insulating layer (GF2) can include silicon oxide or be formed of silicon oxide.

[0124] As described above, by using a method as illustrated in FIGS. 29a to 32c, each of the electrode member (EM1 of FIG. 29a) and the second channel material layer (CM20 of FIG. 29a) is divided to define a read word line (RWL) extending horizontally from the electrode member (EM1 of FIG. 29a) and a second channel layer pattern (CP20) is defined from the second channel material layer (CM20 of FIG. 29a), thereby defining a read transistor including the second channel layer pattern (CP20) and the second gate insulating layer (GL20). In the embodiment of FIG. 32a, a lower read transistor structure disposed below the insulating material layer (NM11) and an upper read transistor structure disposed above the insulating material layer (NM11) can be defined. However, the method of defining the read transistor is exemplary and may be varied in various ways.

[0125] Then, using a method as illustrated in FIGS. 33a to 34c, a read bit line (RBL in FIG. 34a) extending vertically can be formed at a position corresponding (approximately corresponding) to the second vertical hole (H20 in FIG. 15a).

[0126] Referring to FIGS. 33a to 33c, a fourth through hole (H45) may be formed by etching the third filling insulating layer (FL3) and the second gap-fill insulating layer (GF2) at a position corresponding (approximately corresponding) to the second vertical hole (H20 of FIG. 15a) of the structure (S20). To form the fourth through hole (H45), an eleventh mask pattern (M110) may be used. The eleventh mask pattern (M110) may have a predetermined opening pattern. The eleventh mask pattern (M110) may be, for example, a photoresist pattern. After the fourth through hole (H45) is formed, the eleventh mask pattern (M110) may be removed. However, the timing of removing the eleventh mask pattern (M110) may vary. For example, the 11th mask pattern (M110) may be removed after the formation process of the read bit line (RBL) described in FIG. 34a.

[0127] Referring to FIGS. 34a to 34c, a read bit line (RBL) can be formed within the fourth through hole (H45 of FIG. 33a). The read bit line (RBL) can include, for example, at least one of a metal, a metal compound, and conductive silicon.

[0128] A capacitorless 3D DRAM device manufactured according to one embodiment may include a lower write transistor (Tw1) and a lower read transistor (Tr1) disposed below an insulating material layer (NM11). In addition, the capacitorless 3D DRAM device may include an upper write transistor (Tw2) and an upper read transistor (Tr2) disposed above the insulating material layer (NM11). The lower write transistor (Tw1) and the lower read transistor (Tr1) may be considered to constitute one lower memory cell. The upper write transistor (Tw2) and the upper read transistor (Tr2) may be considered to constitute one upper memory cell. The lower write transistor (Tw1) and the lower read transistor (Tr1) may be electrically interconnected. A lower first channel material layer (CL11) of the lower write transistor (Tw1) may be electrically connected to the lower read transistor (Tr1). A portion of the lower first channel material layer (CL11) may be used as a gate of the lower read transistor (Tr1). Therefore, it can be said that the lower read transistor (Tr1) includes a portion of the lower first channel material layer (CL11) as a gate. Similarly, the upper write transistor (Tw2) and the upper read transistor (Tr2) may be electrically interconnected. The upper first channel material layer (CL21) of the upper write transistor (Tw2) may be electrically interconnected to the upper read transistor (Tr2). A portion of the upper first channel material layer (CL21) may be used as a gate of the upper read transistor (Tr2). Therefore, it can be said that the upper read transistor (Tr2) includes a portion of the upper first channel material layer (CL21) as a gate.

[0129] The lower memory cell may have a structure in which the upper memory cell is inverted vertically. The lower write transistor (Tw1) may have a structure in which the upper write transistor (Tw2) is inverted vertically, and the lower read transistor (Tr1) may have a structure in which the upper read transistor (Tr2) is inverted vertically.

[0130] Multiple memory cell structures can be arranged horizontally and vertically spaced apart from each other. In an actual manufacturing process, a much larger number of memory cell structures can be arranged vertically and horizontally than those illustrated in FIGS. 34a to 34c.

[0131] In an embodiment of the present invention, a write bit line (WBL) and a read bit line (RBL) can extend in the vertical direction, and a write word line (WWL) and a read word line (RWL) can extend in the horizontal direction, so that a capacitorless 3D DRAM device having a very high integration and data storage density and excellent performance can be easily manufactured. According to such an embodiment of the present invention, the manufacturing of a high-integration, high-capacity device can be easily performed, and mass production can be possible. In one example, the 3D stacked DRAM device can be a 2T0C type DRAM device or can be configured to include the same.

[0132] FIGS. 35 to 37 are drawings for exemplarily explaining a capacitorless three-dimensional DRAM device according to an embodiment of the present invention. FIG. 35 is a cross-sectional view of the device taken along the XZ plane, and FIGS. 36 and 37 are cross-sectional views (i.e., Z-cut views) of the device taken along the XY plane. FIG. 36 is a cross-sectional view taken along the XY plane at the level of a write word line (WWL) and a read word line (RWL), and FIG. 37 is a cross-sectional view taken along the XY plane at the level of an upper first channel material layer (CL21). The capacitorless three-dimensional DRAM device may be a three-dimensional stacked DRAM device having a gain cell structure. For example, the capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device having a 2T0C (two transistor zero capacitor) cell structure.

[0133] Referring to FIGS. 35 to 37, a capacitorless three-dimensional DRAM device according to an embodiment of the present invention may include a plurality of memory cells arranged to be spaced apart from each other in the horizontal and vertical directions. The capacitorless three-dimensional DRAM device may include a write bit line (WBL) extending in the vertical direction, a write word line (WWL) extending in the horizontal direction, and a write transistor (Tw2) connected to the write bit line (WBL) and the write word line (WWL), the write transistor (Tw2) being defined by including a first channel material layer (CL21), a first gate insulating layer (GN21), and a portion of the write word line (WWL). In addition, the capacitorless 3D DRAM device may include a read bit line (RBL) extending in a vertical direction, a read word line (RWL) extending in a horizontal direction, and a read transistor (Tr2) connected to the read bit line (RBL) and the read word line (RWL), which is defined by a second channel layer pattern (CP20) and a second gate insulating layer (GL20). Here, the second channel layer pattern (CP20) may include a first portion (P1) disposed adjacent to the read bit line (RBL) and extending in a horizontal direction, and a second portion (P2) disposed spaced apart from the read bit line (RBL) and extending in a direction having a given angle with respect to the first portion (P1).

[0134] According to one embodiment, a first portion (P1) of a second channel layer pattern (CP20) may be in contact with a read bit line (RBL), and a second portion (P2) of the second channel layer pattern (CP20) may extend vertically from an edge region of the first portion (P1) and may be configured to partially surround the read bit line (RBL) while being spaced apart from the read bit line (RBL). According to one example, the second portion (P2) may have a concave shape with respect to the read bit line (RBL). The first portion (P1) may have a horizontal plate structure, and the second portion (P2) may have a vertical sidewall structure.

[0135] According to one embodiment, the read word line (RWL) may be arranged to surround a portion of the outer surface of the second portion (P2) between the second gate insulating layer (GL20) and the second channel layer pattern (CP20).

[0136] According to one embodiment, the second gate insulating layer (GL20) may have a structure that surrounds the read word line (RWL) while being disposed between the first channel material layer (CL21) and the second channel layer pattern (CP20), and one end of the second gate insulating layer (GL20) may be in contact with an end of the second portion (P2).

[0137] According to one embodiment, as illustrated in FIG. 36, each of the read word lines (RWL) may have a structure in which arc-shaped electrode portions are connected in a row. Each of the arc-shaped electrode portions may have a structure that is convex in the X-axis direction or in the opposite direction. Similarly, as illustrated in FIG. 36, the write word line (WWL) may have a structure in which arc-shaped electrode portions are connected in a row. Each of the arc-shaped electrode portions may have a structure that is convex in the X-axis direction or in the opposite direction.

[0138] According to one embodiment, a write word line (WWL) may be positioned between a write bit line (WBL) and a read word line (RWL), and a read word line (RWL) may be positioned between the write word line (WWL) and a read bit line (RBL).

[0139] Additionally, the write bit line (WBL) can be shared by two adjacent memory cells on either side thereof. Similarly, the read bit line (RBL) can be shared by two adjacent memory cells on either side thereof. Since each of the write bit line (WBL) and the read bit line (RBL) can be shared by two adjacent memory cells on either side thereof, the embodiments of the present invention can achieve area minimization per memory cell.

[0140] According to one embodiment, the above-described write transistor (Tw2) may be an upper write transistor (Tw2), the above-described read transistor (Tr2) may be an upper read transistor (Tr2), and the upper write transistor (Tw2) and the upper read transistor (Tr2) may constitute an upper memory cell (MC2). In addition, a lower memory cell (MC1) having a structure in which the upper memory cell (MC2) is inverted upside down may be disposed below the upper memory cell (MC2). The lower memory cell (MC1) may include a lower write transistor (Tw1) having a structure in which the upper write transistor (Tw2) is inverted upside down, and a lower read transistor (Tr1) having a structure in which the upper read transistor (Tr2) is inverted upside down.

[0141] The lower write transistor (Tw1) and the lower read transistor (Tr1) may be electrically interconnected. The lower first channel material layer (CL11) of the lower write transistor (Tw1) may be electrically interconnected to the lower read transistor (Tr1). A portion of the lower first channel material layer (CL11) may be used as a gate of the lower read transistor (Tr1). Therefore, the lower read transistor (Tr1) may be said to include a portion of the lower first channel material layer (CL11) as a gate. Similarly, the upper write transistor (Tw2) and the upper read transistor (Tr2) may be electrically interconnected. The upper first channel material layer (CL21) of the upper write transistor (Tw2) may be electrically connected to the upper read transistor (Tr2). A portion of the upper first channel material layer (CL21) may be used as a gate of the upper read transistor (Tr2). Therefore, it can be said that the upper read transistor (Tr2) includes a part of the upper first channel material layer (CL21) as a gate.

[0142] According to one embodiment, at least one of the first channel material layer (CL11, CL21) and the second channel layer pattern (CP20) may include an oxide semiconductor. However, the material of the first channel material layer (CL11, CL21) and the second channel layer pattern (CP20) is not limited to the oxide semiconductor described above. In some cases, at least one of the first channel material layer (CL11, CL21) and the second channel layer pattern (CP20) may include a non-oxide semiconductor.

[0143] In addition, the structure of the capacitorless 3D DRAM device according to an embodiment of the present invention may have various structures and modified configurations as described with reference to FIGS. 1A to 34C.

[0144] In a capacitorless 3D DRAM device according to an embodiment of the present invention, the gate capacitance of each of the read transistor structures (Tr1, Tr2) can be used as a storage element (i.e., a storage node). Such a capacitorless 3D DRAM device can have various advantages, such as a long data retention time and the ability to configure cells using only a plurality of transistors without capacitors.

[0145] The area indicated by the dotted box in FIGS. 36 and 37 may correspond to a unit memory area, i.e., a unit cell area.

[0146] Referring to FIGS. 36 and 37, since each of the write bit line (WBL) and the read bit line (RBL) can be shared by two adjacent memory cells on either side thereof, the size of the unit memory area can be reduced in this regard. Accordingly, according to an embodiment of the present invention, the area per memory cell can be minimized. Since a plurality of the unit memory areas can be easily and repeatedly stacked in the vertical direction, a high-integration, high-capacity device can be easily implemented.

[0147] According to the embodiments of the present invention described above, a capacitorless three-dimensional DRAM device can be implemented that can significantly improve the three-dimensional integration, secure excellent performance, reduce the unit cell size, and facilitate the manufacturing process. In particular, since the capacitorless three-dimensional DRAM device according to the embodiment of the present invention has a structure in which a write bit line and a read bit line extend vertically and a write word line and a read word line extend horizontally, it can be easily manufactured into a three-dimensional stacked structure in which cells are connected in the vertical direction. According to such an embodiment of the present invention, it is easy to manufacture a high-integration, high-capacity device, and mass production can be possible. In addition, by allowing two adjacent memory cells to share a write bit line and also allowing two adjacent memory cells to share a read bit line, the size of a unit cell (i.e., a unit memory area) can be reduced. According to an example, the three-dimensional DRAM device may be a 2T0C type DRAM device or may be configured to include the same.

[0148] FIGS. 38A to 60C are diagrams for exemplarily explaining a method for manufacturing a capacitorless three-dimensional dynamic random access memory (DRAM) device according to an embodiment of the present invention. The capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device (three-dimensional stacked DRAM device) having a gain cell structure. For example, the capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device having a 2T0C (two transistor zero capacitor) cell structure.

[0149] In FIGS. 38a to 60c, the same drawing numbers (e.g., FIG. 1 in FIGS. 38a, 38b, and 38c) indicate the same steps. FIGS. 38a, 39a, 40a, 41a, 42a, 43a, 44a, 45a, 46a, 47a, 48a, 49a, 50a, 51a, 52a, 53a, 54a, 55a, 56a, 57a, 58a, 59a, and 60a are cross-sectional views taken along the XZ plane. Figures 38b, 39b, 40b, 41b, 42b, 43b, 44b, 45b, 46b, 47b, 48b, 49b, 50b, 51b, 52b, 53b, 54b, 55b, 56b, 57b, 58b, 59b, and 60b are cross-sectional views (i.e., Z-cut views) cut along the XY plane at a predetermined level. Figures 38c, 39c, 40c, 41c, 42c, 43c, 44c, 45c, 46c, 47c, 48c, 49c, 50c, 51c, 52c, 53c, 54c, 55c, 56c, 57c, 58c, 59c, and 60c are cross-sectional views cut along the XY plane at different levels (i.e., Z-cut views).

[0150] Referring to FIGS. 38A to 38C, a laminate (S10) can be formed on a predetermined substrate (not shown). The material of the substrate can be selected from various materials. The substrate can include a semiconductor material or an insulating material. The substrate can include a semiconductor wafer. The substrate can also include a bulk silicon substrate, a silicon-on-insulator (SOI) substrate, a germanium substrate, a germanium-on-insulator (GOI) substrate, a silicon-germanium substrate, or a substrate formed by an epitaxial growth process.

[0151] The laminate (S10) may include a laminate structure (S1). The laminate structure (S1) may include a separation layer (SL10) and a first channel material layer (CL10), a first gate insulating layer (GL10), a first insulating layer (NL10), a second insulating layer (NL20), and a buffer layer (BF10) sequentially laminated on the separation layer (SL10).

[0152] The first insulating layer (NL10) is, for example, silicon nitride (e.g., SiN x) may be formed of or include the same. The second insulating layer (NL20) may be formed of a different material from the first insulating layer (NL10) and the buffer layer (BF10). The second insulating layer (NL20) may be formed as a layer having an etching rate different from that of the first insulating layer (NL10) and the buffer layer (BF10) in a subsequent etching process step. For example, the second insulating layer (NL20) may be formed of or include an insulating material such as silicon oxide. The buffer layer (BF10) may be formed as a layer of a different material from that of the first insulating layer (NL10), the second insulating layer (NL20), and the separation layer (SL10). The buffer layer (BF10) may be formed as a layer having an etching rate different from that of the first insulating layer (NL10), the second insulating layer (NL20), and the separation layer (SL10) in a subsequent etching process step. The buffer layer (BF10), the first insulating layer (NL10), the second insulating layer (NL20), and the separation layer (SL10) may have etch selectivities with respect to each other. For example, the buffer layer (BF10) may include silicon. As a specific example, the buffer layer (BF10) may be formed of or include a polysilicon layer.

[0153] The second insulating layer (NL20) may be formed as a different layer from the separation layer (SL10). The second insulating layer (NL20) may be formed as a layer having a different etching rate from the separation layer (SL10) in a subsequent etching process step. For example, the second insulating layer (NL20) may be configured to include porous silicon oxide. The separation layer (SL10) may be formed to include a silicon oxide layer that is denser than the second insulating layer (NL20). The separation layer (SL10) may be formed of or include silicon oxide having a first density, and the second insulating layer (NL20) may be formed of or include silicon oxide having a second density that is smaller than the first density.

[0154] The first insulating layer (NL10) may have a greater thickness than the second insulating layer (NL20). The buffer layer (BF10) may have a thinner thickness than the first insulating layer (NL10) and the second insulating layer (NL20). The separation layer (SL10) may have a greater thickness than the second insulating layer (NL20) and the buffer layer (BF10). However, the specific material and thickness conditions of each of the separation layer (SL10), the first insulating layer (NL10), the second insulating layer (NL20), and the buffer layer (BF10) are not limited to those described above, and may vary depending on the case.

[0155] The laminate (S10) may include a structure in which laminate structures (S1) are repeatedly laminated. The laminate structure (S1) may be a unit laminate structure and may be repeatedly laminated on the substrate. Here, as an example, a case in which two laminate structures (S1) are laminated and a separation layer (SL10) is further disposed thereon is illustrated. The first channel material layer (CL10), the first gate insulating layer (GL10), the first insulating layer (NL10), the second insulating layer (NL20) and the buffer layer (BF10) sequentially laminated may be considered to constitute one unit laminate, and a plurality of the unit laminates may be repeatedly laminated with the separation layer (SL10) interposed therebetween. The unit laminate may be configured to form a memory cell unit of one layer. The separation layer (SL10) may be an insulating layer for separating a lower memory cell from an upper memory cell.

[0156] The processes for depositing the individual layers constituting the laminate (S10) can be performed using various deposition techniques. For example, the layers can be deposited using thermal chemical vapor deposition (thermal CVD), plasma enhanced CVD, physical vapor deposition (PVD), or atomic layer deposition (ALD) techniques.

[0157] Fig. 38b may be a cross-sectional view taken along line (A) of Fig. 38a, and Fig. 38c may be a cross-sectional view taken along line (B) of Fig. 38a. This may be the same as Figs. 47b and 47c.

[0158] Referring to FIGS. 39A to 39C, the laminate (S10 of FIG. 38A) may be patterned to form a patterned laminate (S11). The patterned laminate (S11) may include a plurality of pattern portions (SP10) and first and second pattern extension portions (PE1, PE2) extending in a direction connecting the plurality of pattern portions (SP10). The plurality of pattern portions (SP10) may have a shape extending in a first direction, for example, the X-axis direction, and may be spaced apart from each other in a second direction orthogonal (perpendicular) to the first direction, for example, the Y-axis direction. The first and second pattern extension portions (PE1, PE2) may extend in the second direction, for example, the Y-axis direction. The first pattern extension (PE1) may be formed in an area where a write transistor is to be formed (a write transistor formation area), and the second pattern extension (PE2) may be formed in an area where a read transistor is to be formed (a read transistor formation area). The first and second pattern extensions (PE1, PE2) may be arranged side by side and spaced apart from each other. Each of the first and second pattern extensions (PE1, PE2) may form a line shape together with a part of the pattern portion (SP10). The first and second pattern extensions (PE1, PE2) may be formed to have a relatively smaller line width than the pattern portion (SP10). The patterning for the laminate (S10 of FIG. 38a) may be a patterning step for dividing areas where cells are to be formed, i.e., a cell patterning step. FIG. 39a may be a cross-sectional view corresponding to line (C) of FIG. 39b.

[0159] The pattern portion (SP10) may include a separation layer (SL11), a first channel material layer (CL11), a first gate insulating layer (GL11), a first insulating layer (NL11), a second insulating layer (NL21), and a buffer layer (BF11). The pattern portion (SP10) may have the same laminated structure as described in FIG. 38a. Each of the separation layer (SL11), the first channel material layer (CL11), the first gate insulating layer (GL11), the first insulating layer (NL11), the second insulating layer (NL21), and the buffer layer (BF11) may be a patterned material layer. The first and second pattern extension portions (PE1, PE2) may also have the same laminated structure as the pattern portion (SP10).

[0160] Then, the first filling material (NM1) can be filled between the plurality of pattern portions (SP10) and between the first and second pattern extension portions (PE1, PE2) to form a patterned laminate (S11) and a first structure (S20) including the first filling material (NM1). In other words, the first filling material (NM1) can be filled in empty spaces around the plurality of pattern portions (SP10) and the first and second pattern extension portions (PE1, PE2) to form a patterned laminate (S11) and a first structure (S20) including the first filling material (NM1).

[0161] The first buried material (NM1) may have the same (or substantially the same) height as the pattern portion (SP10). The first buried material (NM1) may be a type of cell separator. The first buried material (NM1) may be, for example, an insulating material. In this case, the first buried material (NM1) may be referred to as an 'insulating material layer' or an 'insulating material layer pattern'. The first buried material (NM1) may be formed of a material having etch selectivity with respect to the first insulating layer (NL11), the second insulating layer (NL21), the buffer layer (BF11), etc. In addition, the first buried material (NM1) may be formed of a material having etch selectivity with respect to the separation layer (SL11), the first channel material layer (CL11), and the first gate insulating layer (GL11). In some cases, the first buried material (NM1) may not be an insulating material.

[0162] Referring to FIGS. 40A to 40C, a first vertical hole (H10) may be formed to vertically penetrate each of a plurality of pattern portions (SP10) in the first structure (S20). Each of the first vertical holes (H10) may be formed to penetrate from the uppermost layer to the lowermost layer of the pattern portion (SP10) in a predetermined region of the first structure (S20). The first vertical hole (H10) may correspond to a region where a write bit line will be formed later. Therefore, it may be said that the first vertical hole (H10) is formed in a write transistor formation region (i.e., a region where a write transistor is scheduled to be formed). The first vertical hole (H10) may be formed adjacent to the first pattern extension portion (PE1). The first vertical hole (H10) may be formed on the opposite side of the first pattern extension portion (PE1) from the side where the second pattern extension portion (PE2) is arranged. A plurality of first vertical holes (H10) can be formed spaced apart from each other in the Y-axis direction. The first vertical holes (H10) can be formed by a dry etching process.

[0163] Referring to FIGS. 41a to 41c, a first horizontal hole (h1) can be formed by recessing the first insulating layer (NL11) around the first vertical hole (H10) of the first structure (S20) to form a first recessed portion (R1), and removing the first insulating layer (NL11) from the first pattern extension portion (PE1). A wet etching process using a wet etchant having etch selectivity to the first insulating layer (NL11) can be used to selectively recess (etch) a portion of the first insulating layer (NL11). Since the portion of the first insulating layer (NL11) included in the first pattern extension portion (PE1) has a relatively small line width, the portion of the first insulating layer (NL11) included in the first pattern extension portion (PE1) can be completely removed. The upper surface of the first gate insulating layer (GL11) and the lower surface of the second insulating layer (NL21) may be exposed by the first recess portion (R1). Although not shown, when the first recess portion (R1) is formed, the separation layer (SL11) may also be slightly recessed.

[0164] Referring to FIGS. 42a to 42c, a material layer (WM1) for a write word line can be formed (deposited) on the inside of the first recessed portion (R1 of FIG. 41a) and the first horizontal hole (h1) and on the inner surface of the first vertical hole (H10). The material layer (WM1) for a write word line can include at least one of a metal, a metal compound, and conductive silicon. As the material layer (WM1) for a write word line is filled in the first horizontal hole (h1), a conductive line can be formed.

[0165] Referring to FIGS. 43A to 43C, a portion formed on the inner surface of the first vertical hole (H10 in FIG. 42A) in the material layer for the write word line (WM1 in FIG. 42A) may be removed. For this purpose, a wet etching process may be used. At this time, a portion of the material layer for the write word line (WM1 in FIG. 42A) adjacent to the inner surface of the first vertical hole (H10 in FIG. 42A) may also be partially recessed. Accordingly, a write word line (WWL) separated from the material layer for the write word line (WM1 in FIG. 42A) may be formed. A plurality of write word lines (WWL) separated from the material layer for the write word line (WM1 in FIG. 42A) may be formed. Each write word line (WWL) may have a line shape due to a portion filled in the first horizontal hole (h1).

[0166] According to one embodiment, after the step of removing a portion formed on the inner surface of the first vertical hole (H10 of FIG. 42a) in the material layer for the write word line (WM1 of FIG. 42a), a step of recessing a portion of the buffer layer (BF11) exposed by the first vertical hole (H10 of FIG. 42a) may be further performed. This may be to electrically isolate the write bit line and the buffer layer (BF11) formed in the area corresponding to the first vertical hole (H10 of FIG. 42a) later. However, depending on the material of the buffer layer (BF11), the step of recessing a portion of the buffer layer (BF11) may be omitted.

[0167] Next, a first filling insulation layer (FL1) filling the first vertical hole (H10 of FIG. 42a) may be formed. The first filling insulation layer (FL1) may be a type of gap fill material layer. As a non-limiting example, the first filling insulation layer (FL1) may include silicon oxide, be formed of silicon oxide, or be formed of another insulating material. The first filling insulation layer (FL1) may be formed to fill the first vertical hole (H10 of FIG. 42a) and fill the empty space around it.

[0168] As described above, by using a method as illustrated in FIGS. 42a to 43c, a write word line (WWL) extending horizontally within the first recess portion (R1 of FIG. 41a) and the first horizontal hole (h1 of FIG. 41b) can be formed, thereby defining a write transistor including a first channel material layer (CL11), a first gate insulating layer (GL11), and a portion of the write word line (WWL). In the embodiment of FIG. 43a, a lower write transistor structure and an upper write transistor structure can be defined. However, the method of defining the write transistor is exemplary and may be varied in various ways.

[0169] Referring to FIGS. 44a to 44c, the first buried material (NM1 of FIGS. 43b and 43c) can be removed from the first structure (S20), and the first channel material layer (CL11) portion can be removed from the first and second pattern extension portions (PE1, PE2). By removing the first channel material layer (CL11) portion from the first and second pattern extension portions (PE1, PE2), cell patterning for the first channel material layer (CL11) can be completed. Since the first channel material layer (CL11) portion included in the first and second pattern extension portions (PE1, PE2) can have a relatively small line width, this portion can be easily removed.

[0170] Referring to FIGS. 45A to 45C, a second buried material (NM2) may be filled between a plurality of pattern portions (SP10) in which the write transistor is defined and between the first and second pattern extension portions (PE1, PE2), thereby forming a second structure (S30) including a plurality of pattern portions (SP10), the first and second pattern extension portions (PE1, PE2), and the second buried material (NM2). In other words, a second buried material (NM2) may be filled in empty spaces around the plurality of pattern portions (SP10) and the first and second pattern extension portions (PE1, PE2), thereby forming a second structure (S30) including a plurality of pattern portions (SP10), the first and second pattern extension portions (PE1, PE2), and the second buried material (NM2).

[0171] The second buried material (NM2) may have the same (or substantially the same) height as the pattern portion (SP10). The second buried material (NM2) may be a type of cell separator. The second buried material (NM2) may be, for example, an insulating material. In this case, the second buried material (NM2) may be referred to as an 'insulating material layer' or an 'insulating material layer pattern'. The second buried material (NM2) may be formed of a material having etch selectivity with respect to the first insulating layer (NL11), the second insulating layer (NL21), the buffer layer (BF11), etc. In addition, the second buried material (NM2) may be formed of a material having etch selectivity with respect to the separation layer (SL11), the first channel material layer (CL11), and the first gate insulating layer (GL11).

[0172] Then, using a method as illustrated in FIGS. 46a to 47c, a write bit line (WBL in FIG. 47a) extending vertically at a position corresponding to the first vertical hole (H10 in FIG. 40a) can be formed. For reference, the expression "corresponding" in this specification may mean the same thing, but may also be a concept encompassing things that are generally the same or similar. This can be equally applied throughout this specification.

[0173] Referring to FIGS. 46a to 46c, a first through hole (H15) can be formed by etching the first filling insulating layer (FL1) at a position corresponding to the first vertical hole (H10 of FIG. 40a) of the second structure (S30). The first through hole (H15) can be formed by a dry etching process.

[0174] Referring to FIGS. 47a to 47c, a write bit line (WBL) can be formed within the first through hole (H15 of FIG. 46a). The write bit line (WBL) can include, for example, at least one of a metal, a metal compound, and conductive silicon.

[0175] Referring to FIGS. 48a to 48c, a second vertical hole (H20) may be formed in the second structure (S30) to vertically penetrate each of the plurality of pattern portions (SP10). The second vertical hole (H20) may be formed in an area where a read transistor is to be formed, i.e., an area where a read transistor is to be formed.

[0176] Each of the second vertical holes (H20) may be formed to penetrate from the uppermost layer to the lowermost layer of the pattern portion (SP10) in a predetermined area of ​​the second structure (S30). The second vertical hole (H20) may correspond to an area where a read bit line will be formed later. The second vertical hole (H20) may be formed adjacent to the second pattern extension portion (PE2). The second vertical hole (H20) may be formed on the opposite side of the second pattern extension portion (PE2) to the side where the first pattern extension portion (PE1) is arranged. A plurality of second vertical holes (H20) may be formed to be spaced apart from each other in the Y-axis direction. The second vertical hole (H20) may be formed by a dry etching process.

[0177] Fig. 48b may be a cross-sectional view taken along line (D) of Fig. 48a, and Fig. 48c may be a cross-sectional view taken along line (B) of Fig. 48a. This may be the same as Figs. 60b and 60c.

[0178] Referring to FIGS. 49a to 49c, a second horizontal hole (h2) may be formed by recessing the second insulating layer (NL21) around the second vertical hole (H20) of the second structure (S30) to form a second recessed portion (R2), and removing the second insulating layer (NL21) from the second pattern extension portion (PE2). A wet etching process using a wet etchant having etch selectivity to the second insulating layer (NL21) may be used to selectively recess (etch) a portion of the second insulating layer (NL21). Since the portion of the second insulating layer (NL21) included in the second pattern extension portion (PE2) has a relatively small line width, the portion of the second insulating layer (NL21) included in the second pattern extension portion (PE2) may be completely removed. The upper surface of the first insulating layer (NL11) and the lower surface of the buffer layer (BF11) may be exposed by the second recessed portion (R2). When the second recessed portion (R2) is formed, the separation layer (SL11) may also be slightly recessed.

[0179] Referring to FIGS. 50A to 50C, the first insulating layer (NL11), the first gate insulating layer (GL11), and the first channel material layer (CL11) exposed by the second vertical hole (H20) may be recessed to form a third recess portion (R3). The recess depth of the third recess portion (R3) may be smaller than the recess depth of the second recess portion (R2). Each of the first insulating layer (NL11), the first gate insulating layer (GL11), and the first channel material layer (CL11) may be recessed using the etching selectivity of the wet etching process.

[0180] Referring to FIGS. 51A to 51C, a second gate insulating layer (GL20) may be formed on the inner surface of the second vertical hole (H20) including the surfaces of the second and third recessed portions (R2, R3 of FIG. 50A) and the inner surface of the second horizontal hole (h2). The second gate insulating layer (GL20) may be formed to include at least one of various insulating materials, and as a non-limiting example, may be formed by an atomic layer deposition (ALD) process. The second gate insulating layer (GL20) may be formed conformally along the shape of the surface on which the second gate insulating layer (GL20) is deposited.

[0181] Then, an electrode material layer (EL1) filling the second recessed portion (R2 of FIG. 50a) and the second horizontal hole (h2) can be formed on the second gate insulating layer (GL20). The electrode material layer (EL1) can have a thickness that fills the second recessed portion (R2 of FIG. 50a) while being formed on the entire surface of the second gate insulating layer (GL20). The electrode material layer (EL1) can be formed conformally along the surface shape of the second gate insulating layer (GL20). The second horizontal hole (h2) can be filled with the material of the electrode material layer (EL1).

[0182] Referring to FIGS. 52a to 52c, a read word line (RWL) remaining in the second recessed portion (R2 of FIG. 50a) and the second horizontal hole (h2) can be formed from the electrode material layer (EL1 of FIG. 51a) by removing the remaining portion except for the portion disposed in the second recessed portion (R2 of FIG. 50a) and the second horizontal hole (h2). For example, a wet etching process capable of removing a metal or a metal compound can be used to remove the remaining portion, leaving only the read word line (RWL) provided in the second recessed portion (R2 of FIG. 50a) and the second horizontal hole (h2). The read word line (RWL) may be a line member extending in the horizontal direction. The specific method of forming a read word line (RWL) is not limited to the method described in FIGS. 51a to 52c, and may vary depending on the case.

[0183] A read word line (RWL) separated from the electrode material layer (EL1 of FIG. 51a) may be formed. A plurality of read word lines (RWL) separated from the electrode material layer (EL1 of FIG. 51a) may be formed. Each read word line (RWL) may have a line shape due to a portion filled in the second horizontal hole (h2). The read word line (RWL) may be referred to as a source electrode line.

[0184] Referring to FIGS. 53a to 53c, a second channel material layer (CL20) can be formed on the second gate insulating layer (GL20) and the read word line (RWL) exposed on the inner surface of the second vertical hole (H20). The second channel material layer (CL20) can be formed, as a non-limiting example, by an ALD process. The second channel material layer (CL20) can be formed conformally along the surface shape of the second gate insulating layer (GL20) and the read word line (RWL).

[0185] Referring to FIGS. 54a to 54c, a second filling insulating layer (FL2) can be formed on the second channel material layer (CL20) to fill the third recessed portion (R3 of FIG. 50a) and the second vertical hole (H20 of FIG. 53a). The second filling insulating layer (FL2) can be formed of, but is not limited to, silicon oxide, or other insulating materials, for example, including silicon oxide.

[0186] Referring to FIGS. 55a to 55c, a second through hole (H25) can be formed at a position corresponding to the second vertical hole (H20 of FIG. 53a) of the second filling insulating layer (FL2). The second through hole (H25) can be formed by a dry etching process.

[0187] Referring to FIGS. 56a to 56c, a portion of the buffer layer (BF11) exposed by the second through hole (H25) may be recessed using a wet etching method. This may be to electrically isolate the buffer layer (BF11) and a read bit line, which will later be formed in an area corresponding to the second vertical hole (H20 of FIG. 48a). However, depending on the material of the buffer layer (BF11), the step of recessing a portion of the buffer layer (BF11) may be omitted.

[0188] Referring to FIGS. 57a to 57c, a portion of the second channel material layer (CL20) exposed by the second through hole (H25) may be recessed using a wet etching method. This may be to prevent contact between the read bit line formed in the area corresponding to the second vertical hole (H20 of FIG. 48a) and the second channel material layer (CL20) in the future.

[0189] Referring to FIGS. 58a to 58c, a third filling insulating layer (FL3) can be formed to fill the second through hole (H25 of FIG. 57a). The third filling insulating layer (FL3) can be formed of a material identical to or similar to the second filling insulating layer (FL2), as a non-limiting example. The third filling insulating layer (FL3) can be formed to fill the empty space around the second through hole (H25 of FIG. 57a).

[0190] Referring to FIGS. 59a to 59c, a third through hole (H35) may be formed by etching the third filling insulating layer (FL3) or the second and third filling insulating layers (FL2, FL3) at a position corresponding to the second vertical hole (H20 of FIG. 48a) of the second structure (S30). The third through hole (H35) may be formed by a dry etching process.

[0191] During the process of forming the third through hole (H35), a portion of the second channel material layer (CL20 of FIG. 58a) may be etched, and a second channel layer pattern (CP20) may be defined from the second channel material layer (CL20 of FIG. 58a). As the second channel layer pattern (CP20) is defined, a read transistor including the second channel layer pattern (CP20) and the second gate insulating layer (GL20) may be defined. In the embodiment of FIG. 59a, a lower read transistor structure and an upper read transistor structure may be defined. However, the method of defining the read transistor is exemplary and may vary.

[0192] Referring to FIGS. 60A to 60C, a read bit line (RBL) can be formed within the third through hole (H35 of FIG. 59A). The read bit line (RBL) can include, for example, at least one of a metal, a metal compound, and conductive silicon. Thus, a read bit line (RBL) extending vertically can be formed at a position corresponding to (or approximately corresponding to) the second vertical hole (H20 of FIG. 48A). The method of forming the read bit line (RBL) is not limited to the above-described method, and can be varied in various ways.

[0193] A capacitorless 3D DRAM device manufactured according to one embodiment may include a write transistor (Tw1) and a read transistor (Tr1) connected thereto. The write transistor (Tw1) and the read transistor (Tr1) connected thereto may constitute one memory cell. A first channel material layer (CL11) of the write transistor (Tw1) may be electrically connected to the read transistor (Tr1). A portion of the first channel material layer (CL11) may be used as a gate of the read transistor (Tr1). Therefore, it may be said that the read transistor (Tr1) includes a portion of the first channel material layer (CL11) as a gate.

[0194] A plurality of memory cells may be stacked vertically, and a separation layer (SL11) may be disposed between the plurality of memory cells. A plurality of write transistors (Tw1) may be stacked while being spaced apart from each other in the vertical direction, and a plurality of read transistors (Tr1) may be stacked while being spaced apart from each other in the vertical direction. A write bit line (WBL) may be commonly connected to a plurality of write transistors (Tw1) that are spaced apart from each other in the vertical direction, and a read bit line (RBL) may be commonly connected to a plurality of read transistors (Tr1) that are spaced apart from each other in the vertical direction.

[0195] Multiple memory cell structures can be arranged horizontally and vertically spaced apart from each other. In an actual manufacturing process, a much larger number of memory cell structures can be arranged vertically and horizontally than those illustrated in FIGS. 60A to 60C.

[0196] According to one embodiment of the present invention, a portion of the first insulating layer (NL11) may be disposed between the first channel material layer (CL11) of the write transistor (Tw1) and the read word line (RWL) connected to the read transistor (Tr1). A portion of the first insulating layer (NL11), i.e., a pattern portion of the first insulating layer (NL11), may be disposed between the first channel material layer (CL11) of the write transistor (Tw1) and the read word line (RWL) connected to the read transistor (Tr1), and between the first gate insulating layer (GL11) and the second gate insulating layer (GL20). Accordingly, an effect of preventing a coupling phenomenon between the first channel material layer (CL11) and the read word line (RWL) can be obtained.

[0197] According to one embodiment of the present invention, a horizontally extended write word line (WWL) and a read word line (RWL) can be easily formed by forming a line-shaped extension across a cell separator (buried material) using a layout. In other words, in the above-described embodiment, a horizontally extended write word line (WWL) and a read word line (RWL) can be easily formed using the first and second pattern extensions (PE1, PE2). Therefore, the manufacturing process can be simplified.

[0198] In an embodiment of the present invention, a write bit line (WBL) and a read bit line (RBL) can extend in the vertical direction, and a write word line (WWL) and a read word line (RWL) can extend in the horizontal direction, so that a capacitorless 3D DRAM device having a very high integration and data storage density and excellent performance can be easily manufactured. According to such an embodiment of the present invention, the manufacturing of a high-integration, high-capacity device can be easily performed, and mass production can be possible. In one example, the 3D stacked DRAM device can be a 2T0C type DRAM device or can be configured to include the same.

[0199] FIGS. 61 to 64 are drawings for exemplarily explaining a capacitorless three-dimensional DRAM device according to an embodiment of the present invention. FIG. 61 is a cross-sectional view of the device taken along the XZ plane, and FIGS. 62 to 64 are cross-sectional views taken along the XY plane (i.e., Z-cut views) of the device. FIG. 62 is a cross-sectional view taken along the XY plane at the level of a read word line (RWL), FIG. 63 is a cross-sectional view taken along the XY plane at the level of a write word line (WWL), and FIG. 64 is a cross-sectional view taken along the XY plane at the level of a first channel material layer (CL11). The capacitorless three-dimensional DRAM device may be a three-dimensional stacked DRAM device having a gain cell structure. For example, the capacitorless three-dimensional DRAM device may be a three-dimensional DRAM device having a 2T0C (two transistor zero capacitor) cell structure.

[0200] Referring to FIGS. 61 to 64, a capacitorless three-dimensional DRAM device according to an embodiment of the present invention may include a plurality of memory cells arranged to be spaced apart from each other in the horizontal and vertical directions. The capacitorless three-dimensional DRAM device may include a write bit line (WBL) extending in the vertical direction, a write word line (WWL) extending in the horizontal direction, and a write transistor (Tw1) connected to the write bit line (WBL) and the write word line (WWL), the write transistor (Tw1) being defined by including a first channel material layer (CL11), a first gate insulating layer (GL11), and a portion of the write word line (WWL). Additionally, the capacitorless 3D DRAM device may include a read bit line (RBL) extending in a vertical direction, a read word line (RWL) extending in a horizontal direction, and a read transistor (Tr1) defined by a second channel layer pattern (CP20) and a second gate insulating layer (GL20) connected to the read bit line (RBL) and the read word line (RWL).

[0201] According to one embodiment, a write transistor (Tw1) and a read transistor (Tr1) connected thereto may constitute one memory cell, and a write word line (WWL) and a read word line (RWL) connected to the one memory cell may be arranged at different heights (levels). For example, the read word line (RWL) may be arranged at a higher position than the write word line (WWL). The write word line (WWL) and the read word line (RWL) may not overlap sideways when viewed from the side.

[0202] According to one embodiment, as illustrated in FIG. 63, the write word line (WWL) may include a line-shaped extension (L11) extending in a direction orthogonal to the direction connecting the write transistor (Tw1) and the read transistor (Tr1) (Y-axis direction in the drawing), and a protruding extension (P11) protruding and extending from the line-shaped extension (L11) in a direction parallel to the direction connecting the write transistor (Tw1) and the read transistor (Tr1) (X-axis direction in the drawing). The protruding extension (P11) may have a shape extending to both sides of the line-shaped extension (L11). A plurality of protruding extensions (P11) extending from one line-shaped extension (L11) may be arranged. The plurality of protruding extensions (P11) may be arranged to be spaced apart from each other in the Y-axis direction. A write transistor (Tw1) may be defined corresponding to each protruding extension (P11).

[0203] According to one embodiment, as illustrated in FIG. 62, the read word line (RWL) may include a line-shaped extension (L12) extending in a line shape in a direction orthogonal to the direction connecting the write transistor (Tw1) and the read transistor (Tr1) (the Y-axis direction in the drawing), and a protruding extension (P12) protruding and extending from the line-shaped extension (L12) in a direction parallel to the direction connecting the write transistor (Tw1) and the read transistor (Tr1) (the X-axis direction in the drawing). The protruding extension (P12) may have a shape extending to both sides of the line-shaped extension (L12). A plurality of protruding extensions (P12) extending from one line-shaped extension (L12) may be arranged. The plurality of protruding extensions (P12) may be arranged to be spaced apart from each other in the Y-axis direction. A read transistor (Tr1) may be defined corresponding to each protruding extension (P12).

[0204] According to one embodiment, as illustrated in FIG. 61, a first insulating layer pattern portion (NL11) may be disposed between a first channel material layer (CL11) of a write transistor (Tw1) and a read word line (RWL) connected to a read transistor (Tr1), and between a first gate insulating layer (GL11) and a second gate insulating layer (GL20). For example, the first insulating layer pattern portion (NL11) may be disposed at the same height as the write word line (WWL) by contacting a side surface of the write word line (WWL). Accordingly, an effect of preventing a coupling phenomenon between the first channel material layer (CL11) and the read word line (RWL) may be obtained.

[0205] According to one embodiment, the second channel layer pattern (CP20) may include a first portion (P1) connected to the read bit line (RBL) and extending in a horizontal direction, and a second portion (P2) extending in a direction having a given angle with respect to the first portion (P1). The first portion (P1) of the second channel layer pattern (CP20) may be in contact with the read bit line (RBL), and the second portion (P2) of the second channel layer pattern (CP20) may extend in a vertical direction from an edge region of the first portion (P1) and may be configured to partially surround the read bit line (RBL). According to one example, the second portion (P2) may have a concave shape with respect to the read bit line (RBL). The first portion (P1) may have a horizontal plate structure, and the second portion (P2) may have a vertical sidewall structure.

[0206] According to one embodiment, the read word line (RWL) may be arranged to surround a portion of the outer surface of the second portion (P2) between the second gate insulating layer (GL20) and the second channel layer pattern (CP20).

[0207] According to one embodiment, the second gate insulating layer (GL20) may have a structure that surrounds the read word line (RWL) while being disposed between the first channel material layer (CL21) and the second channel layer pattern (CP20).

[0208] According to one embodiment, a write word line (WWL) may be positioned between a write bit line (WBL) and a read word line (RWL), and a read word line (RWL) may be positioned between the write word line (WWL) and a read bit line (RBL).

[0209] According to one embodiment, the first channel material layer (CL11) of the write transistor (Tw1) may be electrically connected to the read transistor (Tr1). A portion of the first channel material layer (CL11) may be used as a gate of the read transistor (Tr1). Therefore, it can be said that the read transistor (Tr1) includes a portion of the first channel material layer (CL11) as a gate.

[0210] According to one embodiment, a plurality of write transistors (Tw1) may be stacked so as to be spaced apart from each other in the vertical direction, and a plurality of read transistors (Tr1) may be stacked so as to be spaced apart from each other in the vertical direction. A write bit line (WBL) may be commonly connected to a plurality of vertically spaced write transistors (Tw1), and a read bit line (RBL) may be commonly connected to a plurality of vertically spaced read transistors (Tr1).

[0211] According to one embodiment, at least one of the first channel material layer (CL11) and the second channel layer pattern (CP20) may include an oxide semiconductor. However, the materials of the first channel material layer (CL11) and the second channel layer pattern (CP20) are not limited to the oxide semiconductor described above. In some cases, at least one of the first channel material layer (CL11) and the second channel layer pattern (CP20) may include a non-oxide semiconductor.

[0212] In addition, the structure of the capacitorless 3D DRAM device according to an embodiment of the present invention may have various structures and modified configurations as described with reference to FIGS. 38a to 60c.

[0213] In a capacitorless 3D DRAM device according to an embodiment of the present invention, the gate capacitance of each read transistor structure (Tr1) can be used as a storage element (i.e., a storage node). Such a capacitorless 3D DRAM device can have various advantages, such as a long data retention time and the ability to configure cells using only a plurality of transistors without a capacitor.

[0214] Meanwhile, the area indicated by the dotted box in Fig. 63 may correspond to a unit memory area, i.e., a unit cell area. Each of the write bit line (WBL) and the read bit line (RBL) may be shared with an adjacent unit memory area (unit cell). Since multiple of the above unit memory areas can be easily and repeatedly stacked in the vertical direction, a high-density, high-capacity device can be easily implemented.

[0215] According to the embodiments of the present invention described above, a capacitorless three-dimensional DRAM device can be implemented that can significantly improve the three-dimensional integration, ensure excellent performance, and have an easy manufacturing process. In particular, since the capacitorless three-dimensional DRAM device according to the embodiment of the present invention has a structure in which a write bit line and a read bit line extend vertically, and a write word line and a read word line extend horizontally, it can be easily manufactured into a three-dimensional stacked structure in which cells are connected in the vertical direction. According to such an embodiment of the present invention, it is easy to manufacture a high-integration, high-capacity device, and mass production can be possible. According to one example, the three-dimensional DRAM device may be a 2T0C type DRAM device or may be configured to include the same. In addition, according to one embodiment of the present invention, a line-shaped extension portion that crosses a cell separator (buried material) using a layout can be formed, so that a write word line and a read word line that extend horizontally can be easily formed. In addition, according to one embodiment of the present invention, by disposing a first insulating layer pattern portion between a first channel material layer of a write transistor and a read word line connected to a read transistor, a coupling phenomenon between the first channel material layer and the read word line can be prevented.

[0216] In this specification, preferred embodiments of the present invention have been disclosed, and although specific terms have been used, they have been used only in a general sense to easily explain the technical contents of the present invention and to help the understanding of the invention, and are not intended to limit the scope of the present invention. It will be apparent to those skilled in the art that other modifications based on the technical idea of ​​the present invention can be implemented in addition to the embodiments disclosed herein. Those skilled in the art will appreciate that the capacitorless 3D DRAM device and the manufacturing method thereof according to the embodiments described with reference to FIGS. 1A to 37 and 38A to 64 can be variously substituted, changed, and modified without departing from the technical idea of ​​the present invention. Therefore, the scope of the invention should not be defined by the described embodiments, but by the technical idea described in the claims.

[0217] Embodiments of the present invention can be applied to semiconductor / electronic devices and their manufacturing methods. For example, embodiments of the present invention can be applied to memory devices and their manufacturing methods.

Claims

1. A step of forming a laminate unit including a laminated portion having an insulating material layer and a first channel material layer, a first gate insulating layer, an intermediate layer, a buffer layer, and a separation layer sequentially laminated on the insulating material layer; A step of forming a patterned laminate having a plurality of pattern portions by patterning the laminate unit, wherein the plurality of pattern portions extend in a first direction and are spaced apart from each other in a second direction orthogonal to the first direction; A step of filling a filling material between the plurality of pattern portions to form a structure including the patterned laminate and the filling material; A step of forming a first vertical hole vertically penetrating each of the plurality of pattern portions in the structure; A step of forming a first recessed portion that exposes the first gate insulating layer and the buffer layer by recessing the intermediate layer and the filling material around the first vertical hole of the structure; A step of forming a write word line extending horizontally within the first recess portion to define a write transistor including the first channel material layer, the first gate insulating layer, and a portion of the write word line; A step of forming a write bit line extending vertically at a position corresponding to the first vertical hole; A step of forming a second vertical hole vertically penetrating each of the plurality of pattern portions in the structure; A step of forming a second recessed portion by recessing the intermediate layer and the filling material around the second vertical hole of the structure to expose the first gate insulating layer and the buffer layer; A step of forming a third recessed portion by recessing the first channel material layer and the first gate insulating layer exposed by the second vertical hole; A step of forming a second gate insulating layer on the inner surface of the second vertical hole including the surface of the second and third recessed portions; A step of forming an electrode member that fills an end area of ​​the second recessed portion on an area of ​​the second gate insulating layer formed in the second recessed portion; A step of forming a second channel material layer on the second gate insulating layer and the electrode member exposed on the inner surface of the second vertical hole; A step of defining a read word line extending horizontally from the electrode member by dividing each of the electrode member and the second channel material layer and defining a second channel layer pattern from the second channel material layer, thereby defining a read transistor including the second channel layer pattern and the second gate insulating layer; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming a read bit line extending vertically at a position corresponding to the second vertical hole.

2. In paragraph 1, The above intermediate layer comprises silicon nitride, The above buffer layer comprises silicon, A method for manufacturing a capacitorless 3D DRAM device, wherein the above separation layer comprises silicon oxide.

3. In paragraph 1, A method for manufacturing a capacitorless 3D DRAM device, wherein a plurality of the first recessed portions are connected in the second direction in the step of forming the first recessed portion.

4. In the first paragraph, the step of defining the write transistor comprises: A step of forming a material layer for a writing word line on the inside of the first recess portion and the inner surface of the first vertical hole; A step of removing a portion formed on the inner surface of the first vertical hole in the material layer for the writing word line; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming a first filling insulating layer that fills the first vertical hole.

5. In the fourth paragraph, the step of defining the write transistor comprises: A step of forming a first etching portion crossing the central portion of the material layer for the writing word line and the central portion of the first filling insulating layer in the second direction, thereby defining the writing word line divided from the material layer for the writing word line; and A method for manufacturing a capacitorless 3D DRAM device, further comprising the step of forming a first gap fill insulation layer filling the first etched portion.

6. In the fifth paragraph, the step of forming the write bit line, A step of forming a first through hole by etching the first filling insulating layer and the first gapfill insulating layer at a position corresponding to the first vertical hole of the structure; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming the write bit line within the first through hole.

7. In paragraph 1, A method for manufacturing a capacitorless 3D DRAM device, wherein a plurality of the second recessed portions are connected in the second direction in the step of forming the second recessed portion.

8. In the first paragraph, the step of forming the electrode member comprises: A step of forming an electrode material layer that fills the end area of ​​the second recessed portion on the second gate insulating layer; and A method for manufacturing a capacitorless 3D DRAM device, comprising a step of removing a portion of the electrode material layer other than a portion disposed in an end region of the second recessed portion by a wet etching method.

9. In the first paragraph, after the step of forming the second channel material layer, A step of removing portions formed on the side surfaces of the separation layer and the buffer layer in the second channel material layer and the second gate insulating layer formed on the inner surface of the second vertical hole; A step of forming a second filling insulating layer filling the second and third recessed portions and the second vertical hole on the second channel material layer; A step of forming a second through hole at a position corresponding to the second vertical hole of the second filling insulating layer; A step of recessing the buffer layer, the second gate insulating layer and the second channel material layer exposed by the second through hole; A step of forming a third through hole having a size larger than the second through hole at a position corresponding to the second through hole and removing a portion formed on the side of the insulating material layer in the second channel material layer; and A method for manufacturing a capacitorless 3D DRAM device further comprising the step of forming a third filling insulating layer that fills the third through hole.

10. In the 9th paragraph, after the step of forming the third filling insulating layer, A step of forming a second etching portion crossing the central portion of the electrode member, the central portion of the second channel material layer, and the central portions of the second and third filling insulating layers in the second direction, thereby defining the read word line divided from the electrode member and the second channel layer pattern divided from the second channel material layer; and A method for manufacturing a capacitorless 3D DRAM device, further comprising the step of forming a second gap-fill insulating layer filling the second etched portion.

11. In the 10th paragraph, the step of forming the read bit line comprises: A step of forming a fourth through hole by etching the third filling insulating layer and the second gap-fill insulating layer at a position corresponding to the second vertical hole of the structure; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming the read bit line within the fourth through hole.

12. In paragraph 1, The above laminated portion is an upper laminated portion, The first channel material layer, the first gate insulating layer, the intermediate layer, the buffer layer, and the separation layer are, respectively, an upper first channel material layer, an upper first gate insulating layer, an upper intermediate layer, an upper buffer layer, and an upper separation layer. The above laminate unit further includes a lower laminate disposed below the insulating material layer, A method for manufacturing a capacitorless 3D DRAM device, wherein the lower laminated portion includes a lower separation layer, a lower buffer layer, a lower intermediate layer, a lower first gate insulating layer, and a lower first channel material layer sequentially laminated from below.

13. In paragraph 1, The above write transistor is an upper write transistor, The above read transistor is an upper read transistor, The above upper write transistor and the above upper read transistor are a method for manufacturing a capacitorless 3D DRAM device that constitutes an upper memory cell.

14. In paragraph 13, A lower memory cell having a structure in which the upper memory cell is inverted upside down is formed under the insulating material layer, A method for manufacturing a capacitorless 3D DRAM device, wherein the lower memory cell includes a lower write transistor having a structure in which the upper write transistor is inverted vertically and a lower read transistor having a structure in which the upper read transistor is inverted vertically.

15. As a capacitorless 3D DRAM device, A write bit line extending vertically; A write word line extending in the horizontal direction; A write transistor connected to the write bit line and the write word line, the write transistor defined including a first channel material layer, a first gate insulating layer, and a portion of the write word line; A read bit line extending vertically; a read word line extending horizontally; and A capacitorless 3D DRAM device comprising a read transistor defined by a second channel layer pattern and a second gate insulating layer, the second channel layer pattern including a first portion disposed adjacent to the read bit line and extending in a horizontal direction and a second portion disposed spaced apart from the read bit line and extending in a direction having a given angle with respect to the first portion, and connected to the read bit line and the read word line.

16. In paragraph 15, The first portion of the second channel layer pattern is in contact with the read bit line, A capacitorless 3D DRAM device, wherein the second portion of the second channel layer pattern extends vertically from an edge region of the first portion and is configured to partially surround the read bit line while being spaced apart from the read bit line.

17. In paragraph 15, The second part is a capacitorless 3D DRAM element having a concave shape with respect to the read bit line.

18. In paragraph 15, A capacitorless 3D DRAM device in which the read word line is arranged to surround a portion of the outer circumference of the second portion between the second gate insulating layer and the second channel layer pattern.

19. In paragraph 15, A capacitorless 3D DRAM device in which the second gate insulating layer has a structure that surrounds the read word line while being disposed between the first channel material layer and the second channel layer pattern, and one end of the second gate insulating layer is in contact with an end of the second portion.

20. In paragraph 15, The above read word line is a capacitorless 3D DRAM device having a structure in which arc-shaped electrode parts are connected in a row.

21. In paragraph 15, The above write word line is a capacitorless 3D DRAM device having a structure in which arc-shaped electrode parts are connected in a row.

22. In paragraph 15, The above write word line is arranged between the above write bit line and the above read word line, The above read word line is a capacitorless 3D DRAM element arranged between the above write word line and the above read bit line.

23. In paragraph 15, The above write bit line is shared by two adjacent memory cells on either side thereof, A capacitorless 3D DRAM device in which the read bit line is shared by two adjacent memory cells on either side thereof.

24. In paragraph 15, The above write transistor is an upper write transistor, The above read transistor is an upper read transistor, The upper write transistor and the upper read transistor are capacitorless 3D DRAM elements that constitute an upper memory cell.

25. In paragraph 24, A lower memory cell having a structure in which the upper memory cell is inverted vertically is placed below the upper memory cell, A capacitorless 3D DRAM device in which the lower memory cell includes a lower write transistor having a structure in which the upper write transistor is inverted vertically and a lower read transistor having a structure in which the upper read transistor is inverted vertically.

26. A step of forming a laminate including a laminate structure having a separation layer and a first channel material layer, a first gate insulating layer, a first insulating layer, a second insulating layer, and a buffer layer sequentially laminated on the separation layer; A step of forming a patterned laminate comprising a plurality of pattern portions and first and second pattern extension portions extending in a direction connecting the plurality of pattern portions by patterning the laminate, wherein the plurality of pattern portions extend in a first direction and are mutually spaced apart in a second direction orthogonal to the first direction, and wherein the first and second pattern extension portions form the patterned laminate extending in the second direction; A step of filling a first filling material between the plurality of pattern portions and between the first and second pattern extension portions to form a first structure including the patterned laminate and the first filling material; A step of forming a first vertical hole vertically penetrating each of the plurality of pattern portions in the first structure; A step of forming a first horizontal hole by removing the first insulating layer from the first pattern extension while forming a first recessed portion by recessing the first insulating layer around the first vertical hole of the first structure; A step of forming a write word line extending horizontally within the first recess portion and the first horizontal hole to define a write transistor including the first channel material layer, the first gate insulating layer, and a portion of the write word line; A step of removing the first filling material from the first structure and removing the first channel material layer portion from the first and second pattern extensions; A step of filling a second filling material between the plurality of pattern portions in which the writing transistor is defined and between the first and second pattern extension portions to form a second structure including the plurality of pattern portions, the first and second pattern extension portions, and the second filling material; A step of forming a write bit line extending vertically at a position corresponding to the first vertical hole; A step of forming a second vertical hole vertically penetrating each of the plurality of pattern portions in the second structure; A step of forming a second horizontal hole by removing the second insulating layer from the second pattern extension while forming a second recessed portion by recessing the second insulating layer around the second vertical hole of the second structure; A step of forming a third recessed portion by recessing the first insulating layer, the first gate insulating layer, and the first channel material layer exposed by the second vertical hole; A step of forming a second gate insulating layer on the inner surface of the second vertical hole and the inner surface of the second horizontal hole, including the surfaces of the second and third recessed portions; A step of forming a read word line extending horizontally on the second gate insulating layer within the second recess portion and the second horizontal hole; A step of forming a second channel material layer on the second gate insulating layer and the read word line exposed on the inner surface of the second vertical hole; A step of defining a second channel layer pattern from the second channel material layer to define a read transistor including the second channel layer pattern and the second gate insulating layer; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming a read bit line extending vertically at a position corresponding to the second vertical hole.

27. In paragraph 26, The first insulating layer comprises silicon nitride, The second insulating layer comprises silicon oxide, The above buffer layer is a method for manufacturing a capacitorless 3D DRAM device including silicon.

28. In paragraph 26 or 27, The above separation layer comprises silicon oxide having a first density, A method for manufacturing a capacitorless 3D DRAM device, wherein the second insulating layer includes silicon oxide having a second density smaller than the first density.

29. In the 26th paragraph, the step of defining the write transistor is: A step of forming a material layer for a writing word line on the inside of the first recess portion and the first horizontal hole and on the inner surface of the first vertical hole; A step of removing a portion formed on the inner surface of the first vertical hole in the material layer for the writing word line; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming a first filling insulating layer that fills the first vertical hole.

30. In paragraph 29, A method for manufacturing a capacitorless 3D DRAM device, further comprising the step of recessing a portion of the buffer layer exposed by the first vertical hole after the step of removing a portion formed on the inner surface of the first vertical hole in the material layer for the write word line.

31. In the 29th or 30th paragraph, the step of forming the write bit line comprises: A step of forming a first through hole by etching the first filling insulating layer at a position corresponding to the first vertical hole of the second structure; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming the write bit line within the first through hole.

32. In paragraph 26, the step of forming the read word line comprises: A step of forming an electrode material layer filling the second recess portion and the second horizontal hole on the second gate insulating layer; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of removing a portion of the electrode material layer other than a portion disposed within the second recess portion and the second horizontal hole.

33. In paragraph 26, after the step of forming the second channel material layer, A step of forming a second filling insulating layer filling the third recess portion and the second vertical hole on the second channel material layer; A step of forming a second through hole at a position corresponding to the second vertical hole of the second filling insulating layer; A step of recessing the buffer layer and the second channel material layer exposed by the second through hole; and A method for manufacturing a capacitorless 3D DRAM device further comprising the step of forming a third filling insulating layer filling the second through hole.

34. In the 33rd paragraph, the step of forming the read bit line comprises: A step of forming a third through hole by etching the third filling insulating layer or the second and third filling insulating layers at a position corresponding to the second vertical hole of the second structure; and A method for manufacturing a capacitorless 3D DRAM device, comprising the step of forming the read bit line within the third through hole.

35. In paragraph 26, A method for manufacturing a capacitorless 3D DRAM device, wherein a portion of the first insulating layer remains and is disposed between the first channel material layer of the write transistor and the read word line connected to the read transistor.

36. In paragraph 26, The laminate comprises a structure in which the laminated structure is repeatedly laminated, A plurality of write transistors corresponding to the above write transistors are stacked vertically spaced apart from each other, A plurality of read transistors corresponding to the above read transistor are stacked vertically spaced apart from each other, The above write bit line is commonly connected to a plurality of write transistors spaced vertically, A method for manufacturing a capacitorless 3D DRAM device, wherein the above read bit line is commonly connected to a plurality of read transistors spaced vertically.

37. As a capacitorless 3D DRAM device, A write bit line extending vertically; A write word line extending in the horizontal direction; A write transistor connected to the write bit line and the write word line, the write transistor defined including a first channel material layer, a first gate insulating layer, and a portion of the write word line; A read bit line extending vertically; a read word line extending horizontally; and A read transistor connected to the read bit line and the read word line, the read transistor including a second channel layer pattern and a second gate insulating layer, A capacitorless 3D DRAM device in which the write transistor and the read transistor constitute one memory cell, and the write word line and the read word line connected to the one memory cell are arranged at different heights.

38. In paragraph 37, A capacitorless 3D DRAM device in which the read word line is positioned higher than the write word line.

39. In paragraph 37, the write word line, A line-shaped extension portion extending in a line shape in a direction orthogonal to the direction connecting the write transistor and the read transistor; and A capacitorless 3D DRAM device including a protruding extension portion that protrudes and extends in a direction parallel to the direction connecting the write transistor and the read transistor from the line-shaped extension portion.

40. In paragraph 37, the read word line, A line-shaped extension portion extending in a line shape in a direction orthogonal to the direction connecting the write transistor and the read transistor; and A capacitorless 3D DRAM device including a protruding extension portion that protrudes and extends in a direction parallel to the direction connecting the write transistor and the read transistor from the line-shaped extension portion.

41. In paragraph 37, A capacitorless 3D DRAM device in which a first insulating layer pattern portion is disposed between the first channel material layer of the write transistor and the read word line connected to the read transistor, and between the first gate insulating layer and the second gate insulating layer.

42. In paragraph 41, A capacitorless 3D DRAM element in which the first insulating layer pattern portion is arranged at the same height as the write word line and in contact with the side of the write word line.

43. In paragraph 37, the second channel layer pattern is a first portion connected to the read bit line and extending in the horizontal direction; and A capacitorless three-dimensional DRAM device comprising a second portion extending in a direction having a given angle with respect to the first portion.

44. In paragraph 37, A plurality of write transistors corresponding to the above write transistors are stacked vertically spaced apart from each other, A plurality of read transistors corresponding to the above read transistor are stacked vertically spaced apart from each other, The above write bit line is commonly connected to a plurality of write transistors spaced vertically, A capacitorless 3D DRAM device in which the read bit line is commonly connected to a plurality of read transistors spaced vertically.

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