Compact anchor

Abstract

The present disclosure relates to methods of holding microdevices to the cartridge or donor substrate. Here an anchor layer and a release layer are on the donor substrate and the release layer is removed and a free standing anchor layer holds the microdevice. The present invention further relates to the process of microdevice transfer by reducing a bonding force by reducing the release layer area under the microdevice. Here etching and a blocking structure to control the etching rate may be used.

Description

Compact AnchorFIELD OF THE INVENTION

[0001] The present disclosure relates to methods of holding microdevices to the cartridge or donor substrate. It also relates to the process of microdevice transfer.BRIEF SUMMARY

[0002] The present invention relates to a method of holding microdevices to a donor substrate, the method comprising, having an anchor layer and a release on a donor substrate; having a microdevice attached to the anchor layer; having a bonding layer between the microdevice and the anchor layer and having at least one opening in the release layer exposing the donor substrate at a bottom of the opening.

[0003] The present invention relates to method to transfer microdevices, the method comprising, coupling microdevices to a donor substrate through a release layer, reducing a release layer area under the microdevice by isotropic etching to reduce a bonding force, and using a blocking structure to control an etching rate from different locations under the microdevice.BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The foregoing and other advantages of the disclosure will become apparent upon reading the following detailed description and upon reference to the drawings.

[0006] Figure 1A shows an anchor structure on a substrate.

[0007] Figure IB shows the release layer removed.

[0008] Figure 2A shows an embodiment where microdevices are coupled to a donor substrate through a release layer.

[0009] Figure 2B shows the release layer area under the microdevice 100 can be reduced.

[0010] Figure 3A shows blocking structure is added to control the etching rate from different locations.

[0011] Figure 3B shows the effect of an exemplary blocking layer.

[0012] Figure 3C shows some areas will have a small-area release layer left under microdevices.

[0013] While the present disclosure is susceptible to various modifications and alternative forms, specific embodiments or implementations have been shown by way of example in the drawings and will be described in detail herein. It should be understood, however, that the disclosure is not intended to be limited to the particular forms disclosed. Rather, the disclosure is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of an invention as defined by the appended claims.DETAILED DESCRIPTION

[0014] One method of holding microdevices to the cartridge or donor substrate is anchors. The challenge with this approach is that the anchor takes space between the devices, affecting the device pitch.

[0015] This invention describes an anchor structure that can perfectly sit under the device and eliminate the need for space between the device for anchor structure.

[0016] Figure 1A shows an anchor structure on a donor substrate 100. There is a release layer (or layers) 102 and anchor layer (or layers) 104. And the microdevice device 108 is attached to the anchor layer 104. There can be a bonding layer 106 between the microdevice 108 and the anchor 104. There is at least one opening 120 in the release layer exposing the substrate (or a buffer layer on the substrate) at the bottom of the opening. In one related embodiment, the opening is underneath the device. In another related embodiment the opening has overlap with the microdevice. The anchor layer 104 covers at least part of the opening wall and bottom and connects with the substrate (or the buffer layer(s) on the substrate) at the bottom of the opening. In one related embodiment, the bonding layer is formed on the anchor layer and does not cover the opening. The microdevice is bonded to the anchor structure after the alignment. Here a cavity is formed in the opening.

[0017] In another related embodiment, the bonding layer is formed on the device and then the device is bonded to the anchor structure after alignment. Here the bonding layer may have an overlap with the opening.

[0018] After the structure is formed and the device is bonded to the anchor structure, the release layer is removed (Figure IB) and a free standing anchor layer that includes a wall surface is bonded to the substrate at the opening and is left holding the device in place at the substrate.

[0019] The release and anchor layer can be metal, polymer, dielectric or semiconductor. The bonding layer can be polymer, metals or other types of adhesive.

[0020] A transfer method is to have an array of microdevices into a donor substrate, and a set of selected microdevices are bonded to a system substrate. The selected microdevices are disconnected from the donor substrate through the bonding process (temperature or pressure) orthe donor substrate’s separation from the system substrate. To release the microdevices, the bonding structure of microdevices to the donor substrate should either deform enough under bonding or release the microdevices by stronger bonding force during the separation of the donor and system substrates.

[0021] Figure 2A shows an embodiment where microdevices 200 are coupled to a donor substrate through a release layer 202. The release layer 202 can be a polymer, a metal, a semiconductor, or a dielectric. The coupling can be strong to prevent the removal of microdevices from the donor substrate during the transfer process.

[0022] The release layer area 210 under the microdevice 200 can be reduced to reduce the bonding force, as demonstrated in Figure 2B. The release layer is etched to reduce the area in one related embodiment. The etching can be a wet etch or a dry etch. The etching process of the release layer is isotropic, which means it will etch the layer similarly from all exposed areas. The etch time and etching conditions can be adjusted to control the size of the remaining release layer 210 holding the microdevices 200. In one related case, the etching can be oxygen plasma if the polymer is used as a release layer.

[0023] The challenge with etching is that the release layer’s location, size and shape under the microdevice 300 is hard to control. In a related embodiment, blocking structure 304 is added to control the etching rate from different locations, as demonstrated in Figure 3A. The blocking structure 304 can be photoresist, another polymer, dielectric, metal or other material. The blocking structure 304 can enable the control of the place and shape of the remaining release layer 300.

[0024] Figure 3B shows the effect of an exemplary blocking layer 304. As seen during the etching process, the etch rate of the release layer 312 differs around the blocking layer 304. As the etching progresses, some areas will have a small-area release layer 310 left under microdevices 300 as demonstrated in Figure 3C.

[0025] While particular embodiments and applications of the present invention have been illustrated and described, it is to be understood that the invention is not limited to the precise construction and compositions disclosed herein and that various modifications, changes, and variations can be apparent from the foregoing descriptions without departing from the spirit and scope of the invention as defined in the appended claims.

Claims

Claims1. A method of holding microdevices to a donor substrate, the method comprising: having an anchor layer and a release layer on a donor substrate; having a microdevice attached to the anchor layer; having a bonding layer between the microdevice and the anchor layer; and having at least one opening in the release layer exposing the donor substrate at a bottom of the opening.

2. The method of claim 1, wherein the opening is underneath the microdevice.

3. The method of claim 1, wherein the opening has an overlap with the microdevice.

4. The method of claim 1, wherein the anchor layer covers at least part of an opening wall and bottom of the opening and connects with the donor substrate at the bottom of the opening.

5. The method of claim 4, wherein the bonding layer is formed on the anchor layer and does not cover the opening.

6. The method of claim 5, wherein the microdevice is bonded to the anchor layer after an alignment and a cavity is formed in the opening.

7. The method of claim 4, wherein the bonding layer is formed on the microdevice and the microdevice is bonded to the anchor layer after the alignment wherein further the bonding layer has an overlap with the opening.

8. The method of claim 5 or 7, wherein after a structure is formed and the microdevice is bonded to the anchor layer, the release layer is removed and a free standing anchor layer that includes a wall surface is bonded to the donor substrate at the opening and is left holding the microdevice in place at the donor substrate.

9. The method of claim 1, wherein the release and anchor layers comprise of a metal, a polymer, a dielectric or a semiconductor wherein the bonding layer is a polymer, a metal or an adhesive.

10. A method to transfer microdevices, the method comprising: coupling microdevices to a donor substrate through a release layer; reducing a release layer area under a microdevice by an isotropic etching to reduce a bonding force; and using a blocking structure to control an etching rate from different locations under the microdevice.

11. The method of claim 10, wherein the release layer is a polymer, a metal, a semiconductor, or a dielectric.

12. The method of claim 10, wherein an etch time and etching conditions are adjusted to control a size of a remaining release layer holding the microdevices.

13. The method of claim 10, wherein the etching is a wet etch or a dry etch.

14. The method of claim 10, wherein the blocking structure is a photoresist, another polymer, a dielectric or a metal.

15. The method of claim 10, wherein the blocking structure enables a control of a place and a shape of the remaining release layer.

16. The method of claim 10, wherein as the etching processes, the etch rate of the release layer differs around the blocking structure.

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