Sensor

Abstract

A sensor. The sensor comprises: a flexible substrate (11); and a first sensing structure (12), wherein the first sensing structure (12) comprises a multi-layer structure arranged on one side surface of the flexible substrate (11) in the thickness direction. Layers of the multi-layer structure of the first sensing structure (12) are stacked in the thickness direction of the flexible substrate (11). The multi-layer structure of the first sensing structure (12) comprises a first conductive layer (121) and a second conductive layer (122), and the first conductive layer (121) and the second conductive layer (122) are arranged adjacent to each other. The second conductive layer (122) is located between the first conductive layer (121) and the flexible substrate (11), and the resistance of the second conductive layer (122) changes along with the deformation of the flexible substrate (11).

Description

A sensor Technical Field

[0001] This specification relates to the technical field of electronic components, and in particular to sensors. Background Art

[0002] With the gradual maturity of AR / VR technology and the rise of the metaverse, smart wearable devices are placing higher demands on human-computer interaction technology. Sensors can be integrated into smart wearable devices (such as motion capture suits, myoelectric suits, and motion capture gloves) to accurately identify and reproduce human movements by sensing bending. This is a key underlying technology in the metaverse and is attracting widespread attention and research.

[0003] Therefore, how to improve the accuracy and convenience of sensors in detecting bending conditions is a technical problem that needs to be urgently solved in this field.

[0004] Summary of the Invention

[0005] An embodiment of the present specification provides a sensor, comprising: a flexible substrate and a first sensing structure, wherein the first sensing structure comprises a multilayer structure arranged on a side surface in the thickness direction of the flexible substrate; the layers of the multilayer structure of the first sensing structure are stacked along the thickness direction of the flexible substrate; the multilayer structure of the first sensing structure comprises a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer being arranged adjacent to each other; the second conductive layer is located between the first conductive layer and the flexible substrate; and the resistance of the second conductive layer changes with deformation of the flexible substrate.

[0006] In some embodiments, the resistance between two surfaces of the second conductive layer spaced apart along the thickness direction of the flexible substrate ranges from 1 MΩ to 10 GΩ.

[0007] In some embodiments, the electrical conductivity of the first conductive layer and the flexible substrate are both greater than the electrical conductivity of the second conductive layer; and the second conductive layer is disposed adjacent to the flexible substrate.

[0008] In some embodiments, the multilayer structure further includes a third conductive layer, and the first conductive layer, the second conductive layer and the third conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; the second conductive layer and the third conductive layer are both located between the first conductive layer and the flexible substrate; the conductivity of the first conductive layer and the third conductive layer is greater than the conductivity of the second conductive layer; and the conductivity of the flexible substrate is less than or equal to the conductivity of the second conductive layer.

[0009] In some embodiments, a resistance-related parameter of the second conductive layer is read by a processing circuit.

[0010] In some embodiments, the relative dielectric constant of the second conductive layer is greater than 3.

[0011] In some embodiments, parameters related to capacitance and resistance of the second conductive layer are read by a processing circuit.

[0012] In some embodiments, the multilayer structure further includes another first conductive layer and another second conductive layer; the electrical conductivity of the flexible substrate, the first conductive layer and the another first conductive layer is greater than the electrical conductivity of the second conductive layer, and the electrical conductivity of the flexible substrate, the first conductive layer and the another first conductive layer is greater than the electrical conductivity of the another second conductive layer; the first conductive layer, the second conductive layer, the another first conductive layer and the another second conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; the another second conductive layer is arranged adjacent to the flexible substrate.

[0013] In some embodiments, the first conductive layer and the flexible substrate are grounded; and the other first conductive layer is connected to a voltage output device of a processing circuit via a fixed resistor.

[0014] In some embodiments, the multilayer structure further includes another first conductive layer, another second conductive layer and a fifth conductive layer; the first conductive layer, the second conductive layer, the another first conductive layer, the another second conductive layer and the fifth conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the second conductive layer, and the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the another second conductive layer; the electrical conductivity of the first conductive layer, the fifth conductive layer and the another first conductive layer are all greater than the electrical conductivity of the second conductive layer, and the electrical conductivity of the first conductive layer, the fifth conductive layer and the another first conductive layer are all greater than the electrical conductivity of the another second conductive layer.

[0015] In some embodiments, the first conductive layer and the fifth conductive layer are grounded, and the lead extending from the other first conductive layer is connected to a voltage output device of a processing circuit via a fixed resistor.

[0016] In some embodiments, the relative dielectric constant of the another second conductive layer is greater than 3.

[0017] In some embodiments, the flexible substrate is made of insulating material.

[0018] In some embodiments, parameters related to capacitance and resistance of the second conductive layer and the further second conductive layer are read by a processing circuit.

[0019] In some embodiments, the voltage output device of the processing circuit outputs a pulse voltage, and the parameters related to capacitance and resistance include voltage values ​​at multiple time points.

[0020] In some embodiments, a saturation voltage amplitude on the second conductive layer is smaller than an amplitude of the pulse voltage.

[0021] In some embodiments, the sensor also includes a second sensing structure; the second sensing structure includes a multilayer structure arranged on the other side surface of the flexible substrate in the thickness direction; the layers of the multilayer structure of the second sensing structure are stacked along the thickness direction of the flexible substrate; the multilayer structure of the second sensing structure also includes a first conductive layer and a second conductive layer, and the first conductive layer of the second sensing structure and the second conductive layer of the second sensing structure are arranged adjacent to each other; the conductivity of the first conductive layer of the second sensing structure is greater than the conductivity of the second conductive layer of the second sensing structure, and the second conductive layer of the second sensing structure is located between the first conductive layer of the second sensing structure and the flexible substrate; the resistance of the second conductive layer of the second sensing structure changes with the deformation of the flexible substrate.

[0022] In some embodiments, the detection parameters of the first sensing structure and the second sensing structure are read separately by a processing circuit; wherein the detection parameters include: parameters related to resistance or parameters related to capacitance and resistance of the second conductive layer of the first sensing structure, or parameters related to resistance or parameters related to capacitance and resistance of the second conductive layer of the second sensing structure; and the detection parameters of the first sensing structure and the detection parameters of the second sensing structure are differentially processed by the processing circuit, and the deformation parameters of the flexible substrate are determined based on the results of the differential processing.

[0023] In some embodiments, a saturation voltage amplitude of the second conductive layer of the first sensing structure is not equal to a saturation voltage amplitude of the second conductive layer of the second sensing structure.

[0024] In some embodiments, the sensor further includes a third sensing structure and a fourth sensing structure; the third sensing structure includes a multilayer structure arranged on one side surface in the width direction of the flexible substrate; the fourth sensing structure includes a multilayer structure arranged on the other side surface in the width direction of the flexible substrate; the layers of the multilayer structure of the third sensing structure are stacked along the width direction of the flexible substrate, and the layers of the multilayer structure of the fourth sensing structure are stacked along the width direction of the flexible substrate; the multilayer structures of the third sensing structure and the fourth sensing structure both include a sixth conductive layer and a seventh conductive layer, and the sixth conductive layer and the seventh conductive layer are arranged adjacent to each other; the conductivity of the sixth conductive layer is greater than the conductivity of the seventh conductive layer, and the seventh conductive layer is located between the sixth conductive layer and the flexible substrate; the resistance of the seventh conductive layer changes with the deformation of the flexible substrate.

[0025] In some embodiments, the width direction is perpendicular to the thickness direction.

[0026] In some embodiments, the ratio of the thickness to the width of the flexible substrate ranges from 0.3 to 3.

[0027] In some embodiments, the first conductive layer, the second conductive layer, and the flexible substrate all comprise an elastic material.

[0028] In some embodiments, the elastic material of the first conductive layer and the elastic material of the second conductive layer are both filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer is greater than the density of the conductive particles filled in the elastic material of the second conductive layer.

[0029] In some embodiments, the thickness of the first conductive layer ranges from 5um to 150um; and / or the thickness of the second conductive layer ranges from 5um to 150um; and / or the thickness of the flexible substrate ranges from 300um to 5000um.

[0030] In some embodiments, the width of the first conductive layer is less than or equal to the width of the second conductive layer; and the width of the second conductive layer is less than or equal to the width of the flexible substrate.

[0031] In some embodiments, a first protective structure is further included, wherein the first protective structure covers a side of the first conductive layer away from the flexible substrate.

[0032] In some embodiments, the exposed surface of the flexible substrate is covered with a second protective structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] This specification will be further described in the form of exemplary embodiments, which will be described in detail with reference to the accompanying drawings. These embodiments are not limiting, and in these embodiments, like numbers represent like structures, wherein:

[0034] FIG1A is a schematic cross-sectional view of a sensor according to some embodiments of the present specification;

[0035] FIG1B is a schematic cross-sectional view of a sensor having two sensing structures according to some embodiments of this specification;

[0036] FIG2A is a schematic diagram of the resistance change principle of the sensor shown in FIG1A ;

[0037] FIG2B is a schematic diagram of the resistance change principle of the sensor shown in FIG1B ;

[0038] FIG2C is a schematic diagram showing wrinkles on the sensor;

[0039] FIG3 is an equivalent circuit diagram of the sensor shown in FIG1B ;

[0040] FIG4A is a schematic cross-sectional view of a sensor according to some other embodiments of the present specification;

[0041] FIG4B is a cross-sectional schematic diagram of a sensor having two sensing structures according to other embodiments of this specification;

[0042] FIG5A is a schematic cross-sectional view of a sensor according to yet other embodiments of the present specification;

[0043] FIG5B is a cross-sectional schematic diagram of a sensor having two sensing structures according to yet other embodiments of this specification;

[0044] FIG6A is an equivalent circuit diagram of the sensor shown in FIG5A ;

[0045] FIG6B is an equivalent circuit diagram of the sensor shown in FIG5B ;

[0046] FIG7A is a cross-sectional schematic diagram of a sensor according to some further embodiments of the present specification;

[0047] FIG7B is a cross-sectional schematic diagram of a sensor having two sensing structures according to some further embodiments of this specification;

[0048] FIG8A is an equivalent circuit diagram of the sensor shown in FIG7A ;

[0049] FIG8B is an equivalent circuit diagram of the sensor shown in FIG7B ;

[0050] FIG9A is a schematic cross-sectional view of a sensor according to some other embodiments of this specification;

[0051] FIG9B is a cross-sectional schematic diagram of a sensor having two sensing structures according to some other embodiments of this specification;

[0052] FIG10 is a schematic diagram of output voltage according to some embodiments of this specification;

[0053] 11A-11C are schematic cross-sectional views of a sensor having four sensing structures according to some embodiments of the present specification. DETAILED DESCRIPTION

[0054] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the following is a brief introduction to the drawings required for the description of the embodiments. Obviously, the drawings described below are only some examples or embodiments of this specification. For ordinary technicians in this field, this specification can also be applied to other similar scenarios based on these drawings without paying any creative work. It should be understood that these exemplary embodiments are provided only to enable technicians in the relevant fields to better understand and implement this specification, and do not limit the scope of this specification in any way. Unless it is obvious from the language environment or otherwise explained, the same reference numerals in the figures represent the same structure or operation.

[0055] As used in this specification and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not specifically refer to the singular and may also include the plural, unless the context clearly indicates an exception. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been explicitly identified, and these steps and elements do not constitute an exclusive list. The method or apparatus may also include other steps or elements. The term "based on" means "at least in part based on." The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one other embodiment."

[0056] In the description of this specification, it should be understood that the orientation or position relationship indicated by terms such as "thickness direction" and "width direction" is based on the orientation or position relationship shown in the accompanying drawings, and is only for the convenience of describing this specification and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this specification.

[0057] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of the technical features being referred to. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. Throughout this specification, "plurality" means at least two, such as two or three, unless otherwise specifically defined.

[0058] The embodiments of this specification provide a sensor. The sensor can be set on a smart wearable device (such as a motion capture suit, an electromyographic suit, a motion capture glove, etc.). The movements of the user wearing the smart wearable device will cause the smart wearable device to deform, which in turn causes the sensor to deform (such as bending, stretching, compression, etc.). In some embodiments, the sensor can be a flexible sensor, which refers to a sensor that is more susceptible to deformation when subjected to external force. By sensing its own deformation, the sensor can accurately identify and restore human body movements. For example, the sensor can sense its own bending condition (such as bending angle, bending direction), thereby achieving accurate recognition and restoration of human body movements.

[0059] A first sensing structure is arranged on one side surface of the flexible substrate of the sensor in the thickness direction. Since the flexible substrate of the first sensing structure is flexible, it can bend and deform as the smart wearable device is deformed. The first sensor may include a multilayer structure arranged on one side surface of the flexible substrate in the thickness direction, including a first conductive layer and a second conductive layer adjacent to each other. The bending deformation of the flexible substrate can cause the deformation of the second conductive layer, and then the resistance of the second conductive layer can change as the flexible substrate is deformed. Therefore, the change in the resistance of the second conductive layer or the parameters related to the resistance can reflect the bending condition of the sensor (such as bending angle, bending direction). The bending condition of the sensor can be sensed more accurately through the change in resistance or the parameters related to resistance. In addition, since the first conductive layer is adjacent to the second conductive layer, the first conductive layer can be used as an electrode to lead out a signal to collect parameters related to the resistance of the second conductive layer. The collection of the relevant parameters of the resistance of the second conductive layer is very simple, which makes it more convenient for the sensor to detect bending conditions.

[0060] FIG1A is a schematic cross-sectional view of a sensor 1 according to some embodiments of the present disclosure. In some embodiments, as shown in FIG1A , the sensor 1 includes a flexible substrate 11 and a first sensing structure 12. The first sensing structure 12 includes a multilayer structure arranged on one side surface of the flexible substrate 11 in the thickness direction. The layers of the multilayer structure of the first sensing structure 12 are stacked along the thickness direction of the flexible substrate 11. The multilayer structure of the first sensing structure 12 includes a first conductive layer 121 and a second conductive layer 122. The first conductive layer 121 and the second conductive layer 122 are arranged adjacent to each other. The second conductive layer 122 is disposed between the first conductive layer 121 and the flexible substrate 11. The resistance of the second conductive layer 122 changes with the deformation of the flexible substrate 11.

[0061] The thickness direction of the flexible substrate 11 can be the t direction in the accompanying drawings (such as FIG. 1A ). The first sensing structure 12 includes multiple layered structures. The layers of the multiple layered structure of the first sensing structure 12 are stacked along the thickness direction of the flexible substrate 11, which can be understood as: the layers of the multiple layered structures of the first sensing structure 12 are arranged along the thickness direction of the flexible substrate 11 and stacked together.

[0062] The flexible substrate 11 can serve as a supporting substrate for the first sensing structure 12. The flexible substrate 11 can include a flexible material. Due to its flexible nature, the flexible substrate 11 is susceptible to deformation (e.g., bending) when subjected to external forces. The first sensing structure 12 is a sensing structure that can be used to measure bending deformation of the sensor 1. The first conductive layer 121 and the second conductive layer 122 are both made of conductive materials or layered structures that incorporate conductive materials during the manufacturing process. In some embodiments, the first conductive layer 121 and the second conductive layer 122 can also include flexible materials, and the first conductive layer 121 and the second conductive layer 122 deform along with the flexible substrate 11. In some embodiments, the flexible material can be filled with conductive particles to form the first conductive layer 121 and the second conductive layer 122. The type and proportion of the conductive particles filled in the first conductive layer 121 and the second conductive layer 122 affect the conductivity of the first conductive layer 121 and the second conductive layer 122. For details, please refer to the description below regarding the materials of the first conductive layer 121, the second conductive layer 122, and the flexible substrate 11.

[0063] The second conductive layer 122 is arranged between the first conductive layer 121 and the flexible substrate 11, which can be understood as follows: in the thickness direction, at least part of the structure of the first conductive layer 121 and the flexible substrate 11 is located on both sides of the second conductive layer 122. In this specification, two components are adjacent to each other, which means that the two components are adjacent to each other and are electrically connected. The adjacent arrangement of the first conductive layer 121 and the second conductive layer 122 can be understood as follows: the first electric field and the second conductive layer 122 are adjacent to each other in the thickness direction of the flexible substrate 11, and are electrically connected. Through such an arrangement, the first conductive layer 121 can serve as an electrode to lead out relevant signals of the second conductive layer 122 (such as signals related to the resistance of the second conductive layer 122, and signals related to the capacitance and resistance of the second conductive layer 122).

[0064] In some embodiments, the conductivity of the first conductive layer 121 is greater than the conductivity of the second conductive layer 122. Conductivity is a parameter used to describe the ease with which charge flows in a substance. Since the conductivity of the first conductive layer 121 is greater than that of the second conductive layer 122, the first conductive layer 121 has better conductivity. Therefore, the resistance of the first conductive layer 121 is less than that of the second conductive layer 122. It should be noted that in this specification, the resistance of a component refers to the resistance between two surfaces of the component spaced apart along the thickness direction of the flexible substrate 11. The resistance of the first conductive layer 121 refers to the resistance between two surfaces of the first conductive layer 121 spaced apart along the thickness direction of the flexible substrate 11, and the resistance of the second conductive layer 122 refers to the resistance between two surfaces of the second conductive layer 122 spaced apart along the thickness direction of the flexible substrate 11. In some embodiments, the conductivity of the first conductive layer 121 can be more than 100 times the conductivity of the second conductive layer 122.

[0065] Figure 2A is a schematic diagram illustrating the resistance variation principle of the sensor 1 shown in Figure 1A . As shown in Figure 2A , the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 changes with deformation of the flexible substrate 11 as follows: the resistance R of the second conductive layer 122 (the resistance RB1 of the second conductive layer 122 of the first sensing structure 12) is R = ρ(d / S), where ρ represents the resistivity of the second conductive layer 122, S represents the area of ​​the second conductive layer 122, and d represents the thickness of the second conductive layer 122. During bending deformation of the sensor 1, the resistivity ρ and thickness d of the second conductive layer 122 remain approximately constant. Therefore, the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is proportional to the area S of the second conductive layer 122. For example, if the second conductive layer 122 is a rectangle, the initial area S of the second conductive layer 122 is S = w × L0, where w represents the width of the second conductive layer 122 and L0 represents the initial length of the second conductive layer 122. In Figures 2A-2C, the l direction is the length direction, and the width direction is the direction toward the inside and outside of the paper. Before the sensor 1 is bent, the resistance of the second conductive layer 122 is: RB1 = ρ (d / W × L0). After the sensor 1 is bent, the length of the second conductive layer 122 changes (e.g., increases) from L0 to L B1 (The length of the second conductive layer 122 increases or decreases based on the bending direction), L B1 The specific value of is related to the bending angle α. Therefore, after the sensor 1 is bent, the resistance of the second conductive layer 122 is: RB1 = ρ (d / W × L B1 ).

[0066] When the sensor 1 (flexible substrate 11) is bent and deformed, the physical shape of the second conductive layer 122 will change accordingly, thereby causing the resistance of the second conductive layer 122 to change (for the specific principle, please refer to Figure 2A and related instructions). For example, bending of the sensor 1 will cause the area of ​​the second conductive layer 122 to change, thereby changing the resistance of the second conductive layer 122. By collecting the resistance of the second conductive layer 122 or parameters related to resistance, and analyzing the changes in the resistance of the second conductive layer 122 or parameters related to resistance, the bending condition of the sensor 1 (such as bending angle, bending direction) can be sensed more accurately. In addition, since the first conductive layer 121 is adjacent to the second conductive layer 122, the first conductive layer 121 can be used as an electrode to extract a signal to collect parameters related to the resistance of the second conductive layer 122. The collection of parameters related to the resistance of the second conductive layer 122 is very simple, which makes it more convenient for the sensor 1 to detect bending conditions.

[0067] In some embodiments, the resistance between two surfaces of the second conductive layer 122 spaced apart along the thickness direction of the flexible substrate 11 may be 0.8 MΩ to 15 GΩ. In some embodiments, the resistance between two surfaces of the second conductive layer 122 spaced apart along the thickness direction of the flexible substrate 11 may be in the range of 1 MΩ to 10 GΩ.

[0068] By setting the resistance range between the two surfaces of the second conductive layer 122 spaced apart along the thickness direction of the flexible substrate 11 to 1 MΩ to 10 GΩ, the second conductive layer 122 can be made conductive while having a sufficiently large resistance, thereby ensuring that the measurement of the resistance of the second conductive layer 122 and the analysis of the resistance change value can accurately reflect the bending condition of the sensor 1.

[0069] Figure 1B is a schematic cross-sectional view of a sensor having two sensing structures, according to some embodiments of this specification. In some embodiments, as shown in Figure 1B , sensor 1 further includes a second sensing structure 12'; second sensing structure 12' comprises a multilayer structure disposed on the other side of the flexible substrate 11 in the thickness direction; the layers of the multilayer structure of second sensing structure 12' are stacked along the thickness direction of flexible substrate 11. In other words, first sensing structure 12 and second sensing structure 12' are located on opposite sides of the flexible substrate 11 in the thickness direction.

[0070] In some embodiments, the multilayer structure of the second sensing structure 12' also includes a first conductive layer 121' and a second conductive layer 122'. The first conductive layer 121' and the second conductive layer 122' of the second sensing structure 12' are arranged adjacent to each other. The conductivity of the first conductive layer 121' of the second sensing structure 12' is greater than the conductivity of the second conductive layer 122' of the second sensing structure 12'. The second conductive layer 122' of the second sensing structure 12' is located between the first conductive layer 121' of the second sensing structure 12' and the flexible substrate 11. The resistance of the second conductive layer 122' of the second sensing structure 12' changes with the deformation of the flexible substrate 11'. The structure and operating principle of the second sensing structure 12' can be similar to those of the first sensing structure 12. For details, please refer to the relevant description of the first sensing structure 12.

[0071] In some embodiments, the sensor 1 may be a symmetrical structure in the thickness direction of the flexible substrate 11, and the axis of symmetry may be the dotted line M in FIG1B . In other words, the first sensing structure 12 and the second sensing structure 12 ′ include the same components, and the structures and sizes of the components included in the two are also the same.

[0072] In other embodiments, both the first sensing structure 12 and the second sensing structure 12' can detect the resistance of the second conductive layer 122 (122') or a parameter related to resistance, but the first sensing structure 12 and the second sensing structure 12' can be different. For example, the conductivity of the first conductive layer 121 of the first sensing structure 12 can be different from the conductivity of the first conductive layer 121' of the second sensing structure 12'.

[0073] FIG2B is a schematic diagram of the resistance change principle of the sensor 1 shown in FIG1B . The resistance change principle shown in FIG2B is similar to the resistance change principle shown in FIG2A , and the same contents will not be repeated. As shown in FIG2B , the resistance value RB1 of the second conductive layer 122 of the first sensing structure 12 and the resistance value RB1' of the second conductive layer 122' of the second sensing structure 12' both conform to the formula described above: R = ρ(d / S), where ρ represents the resistivity of the second conductive layer 122, S represents the area of ​​the second conductive layer 122, and d represents the thickness of the second conductive layer 122. Before the sensor 1 is bent, the resistance of the second conductive layer 122 of the first sensing structure 12 and the resistance of the second conductive layer 122' of the second sensing structure 12' are both: RB1 = RB2 = ρ(d / W×L0). When the sensor 1 is bent at an angle of α, the length of the second conductive layer 122 of the first sensing structure 12 changes to L. B1 =L0+2α*g, the length of the second conductive layer 122' of the second sensing structure 12' changes to L B1'=L0-2α*g. Here, g represents the thickness between the first conductive layer 121 or the second conductive layer 122 and the symmetry axis M of the sensor 1, and L0 represents the initial length of the second conductive layer. In some embodiments, L0 can be the length of the sensor 1 at the symmetry axis M. Therefore, after the sensor 1 is bent, the resistance of the second conductive layer 122 of the first sensing structure 12 is: The resistance of the second conductive layer 122' of the second sensing structure 12' is: It can be seen from the above formulas (1) and (2) that the resistance change trends of the two sensing structures are opposite. The resistance RB1 of the second resistance layer of the first sensing structure 12 is negatively correlated with the bending angle α, and the resistance RB1′ of the second resistance layer of the second sensing structure 12′ is positively correlated with the bending angle α.

[0074] By providing two sensing structures (the first sensing structure 12 and the second sensing structure 12 ′), since the change trends of the two sensing structures are opposite, the total change in resistance increases after data processing (such as differential processing), thereby increasing the sensing sensitivity of the sensor 1.

[0075] In addition, Figure 2C is a schematic diagram of the wrinkles on the sensor 1. As shown in Figure 2C, when the sensor is wrinkled (Figure 2C shows wrinkles on the length L), it is equivalent to multiple bends (the bending angles can include α1, α2, and α3). After geometric integration, it can be seen that α1, α2, and α3 do not need to be considered. Only the angle between the head and tail of the sensor needs to be considered. In other words, no matter how many times the sensor is bent, L B1 =L0+2α*g and L B1’ =L0-2α*g still holds true, where α is the bending angle, and the bending angle α is the angle between the head and tail of the sensor, indicating that the sensor 1 having the first sensing structure 12 and the second sensing structure 12' can effectively prevent the influence of wrinkles.

[0076] Furthermore, by providing two sensing structures, particularly by symmetrically disposing a first sensing structure 12 and a second sensing structure 12' in the thickness direction of the flexible substrate 11, common-mode interference can be effectively eliminated. As an example, in addition to bending deformation, sensor 1 also undergoes tension and compression. When sensor 1 as a whole stretches or compresses, the first sensing structure 12 and the second sensing structure 12' will also stretch or compress synchronously. The stretching or compression of the first sensing structure 12 and the second sensing structure 12' is considered common-mode interference. Providing two sensing structures and performing differential signal processing can eliminate this common-mode interference, rendering sensor 1 insensitive to its own tension or compression deformation and sensitive only to its own bending deformation. This increases the accuracy of sensor 1's angle sensing.

[0077] In some embodiments, the parameters of the sensor 1 (for example, the parameters related to the resistance of the second conductive layer 122 described below, the parameters related to the capacitance and resistance of the second conductive layer 122, the parameters related to the capacitance and resistance of the other second conductive layer 127, etc.) can be read by the processing circuit. The specific parameter type read by the processing circuit is related to the structure of the processing circuit, the connection relationship between the processing circuit and the sensor 1, the structure of the sensor 1, etc., please refer to the relevant description below for details. In some embodiments, the processing circuit may include a signal output device, and the signal output device may output an electrical signal (such as a voltage signal) to the sensor 1 so that the processing circuit can read the corresponding parameters fed back by the sensor 1. The processing circuit may be a voltage divider circuit, a bridge circuit, a charge and discharge circuit, etc. In some embodiments, the signal output device may output a direct current signal to the sensor 1 (such as the embodiment shown in Figure 3). In other embodiments, the signal output device may output an alternating current signal to the sensor 1 (such as the embodiment shown in Figures 6A, 6B, 8A, and 8B). As an example only, the signal output device may include a voltage output device. The voltage output device can output a voltage (DC voltage or AC voltage) to the sensor 1, and the processing circuit can read the corresponding voltage fed back by the sensor 1 based on the voltage output by the device to the sensor 1. In some embodiments, the voltage output device can output a signal such as a square wave, a triangle wave, a sine wave, or a pulse wave to the sensor 1.

[0078] In some embodiments, a processing circuit reads detection parameters of the first sensing structure 12 and the second sensing structure 12', respectively. The detection parameters include resistance-related parameters of the second conductive layer 122 of the first sensing structure 12, capacitance- and resistance-related parameters of the second conductive layer 122 of the first sensing structure 12, resistance-related parameters of the second conductive layer 122' of the second sensing structure 12', or capacitance- and resistance-related parameters of the second conductive layer 122' of the first sensing structure 12. The processing circuit performs differential processing on the detection parameters of the first sensing structure 12 and the detection parameters of the second sensing structure 12', and determines the deformation parameters of the flexible substrate 11 based on the results of the differential processing. A description of the specific parameters included in the detection parameters can be found below.

[0079] When the sensor 1 has two sensing structures (such as a first sensing structure 12 and a second sensing structure 12'), the two sensing structures are connected together by a flexible substrate 11, and external forces can act on the two sensing structures at the same time. In some embodiments, the processing circuit can perform differential processing on the detection parameters of the two sensing structures in the sensing unit to determine the bending condition (such as bending angle, bending direction) of the flexible substrate 11. Differential processing can be used to remove common but unnecessary common-mode signals between the detection parameters of the sensing structures, thereby amplifying the difference between the detection parameters of the two sensing structures. For example, the sensor 1 may undergo tensile or compressive deformation as a whole due to non-bending reasons, which is likely to affect the sensor 1's sensing results of the bending condition, thereby affecting the accuracy of the sensor 1's sensing of the bending deformation. Since the tensile or compressive deformation acts on the two sensing structures at the same time, the change in the detection parameters caused by the tensile or compressive deformation can be used as a common-mode signal between the detection parameters of the two sensing structures in the sensor 1. The processing circuit can perform differential processing on the detection parameters of the two sensing structures in the sensing unit to filter the common-mode signal and amplify the differential-mode signal, thereby reducing the impact of external factors on the sensing of sensor 1 and improving the accuracy of sensor 1 in sensing bending deformation. In some embodiments, the processing circuit can read relevant signals (such as parameters related to the resistance of the second conductive layer 122, parameters related to the capacitance and resistance of the second conductive layer 122, etc., as described below) using a differential amplifier.

[0080] In some embodiments, the electrical conductivity of the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122. The second conductive layer 122 is disposed adjacent to the flexible substrate 11. In some embodiments, leads are provided from the first conductive layer 121 and the flexible substrate 11 to connect to a processing circuit for reading parameters related to the resistance of the second conductive layer 122. Because both the first conductive layer 121 and the flexible substrate 11 are disposed adjacent to the second conductive layer 122, the first conductive layer 121 and the flexible substrate 11 can serve as electrodes, conveniently allowing the parameters related to the resistance of the second conductive layer 122 to be derived.

[0081] The second conductive layer 122 being arranged adjacent to the flexible substrate 11 can be understood as: the flexible substrate 11 and the second conductive layer 122 are adjacent to each other in the thickness direction of the flexible substrate 11 and are electrically connected thereto. Because the conductivity of the first conductive layer 121 and the conductivity of the flexible substrate 11 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are significantly greater than the conductivity of the second conductive layer 122 (for example, the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are both greater than the conductivity of the second conductive layer 122), the resistance of the first conductive layer 121 and the resistance of the flexible substrate 11 can be approximately negligible, and the resistance between the first conductive layer 121 and the flexible substrate 11 is approximately equal to the resistance between the two surfaces of the second conductive layer 122 separated by the thickness direction of the flexible substrate 11.

[0082] In this embodiment, the flexible substrate 11 can be made by filling a flexible material with conductive particles. By adjusting the type and ratio of the conductive particles, the flexible substrate 11 can be obtained with varying desired electrical conductivities. For further information on this type of flexible substrate 11, please refer to the description of the material of the flexible substrate 11 below.

[0083] The resistance-related parameters of the second conductive layer 122 may include one or more parameters, such as voltage, current, and resistance. These parameters reflect the change in resistance of the second conductive layer 122 when the sensor 1 is bent. The resistance-related parameters of the second conductive layer 122 can be read by a processing circuit (such as a voltage divider circuit, a bridge circuit, etc.). Leads are connected to the processing circuit from the first conductive layer 121 and the flexible substrate 11. When the sensor 1 is bent, the resistance-related parameters of the second conductive layer 122 change accordingly. The processing circuit can read the resistance-related parameters of the second conductive layer 122 and thus detect the change in resistance of the second conductive layer 122. In some embodiments, the processing circuit can read the voltage and current across the second conductive layer 122 and determine the resistance of the second conductive layer 122 as the ratio of the voltage to the current across the second conductive layer 122. When the sensor 1 is bent, the voltage and / or current across the second conductive layer 122 changes, and the resistance of the second conductive layer 122 determined by the processing circuit also changes. In other embodiments, only the voltage value output by the sensor 1 may be detected, and the voltage value may be directly used as a parameter related to the resistance of the second conductive layer 122 to reflect the resistance change value of the second conductive layer 122 .

[0084] By way of example only, the processing circuit can be connected to the sensor 1 shown in FIG1A in the following manner: a voltage output device of the processing circuit is connected to the sensor 1 to provide a DC voltage Vcc to the sensor 1. A current detection device of the processing circuit can detect the current flowing through the second conductive layer 122. This current serves as a parameter related to the resistance of the second conductive layer 122. By analyzing the current flowing through the second conductive layer 122 and its change, the change in resistance can be determined, thereby determining the bending angle of the sensor 1.

[0085] When the sensor 1 includes a second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12' and the flexible substrate 11 can all lead out leads to connect to the processing circuit to read the parameters related to capacitance and resistance of the first sensing structure 12 and the parameters related to resistance of the second sensing structure 12'. As an example only, the processing circuit can be connected to the sensor 1 shown in Figure 1B in the following manner: one of the first conductive layer 121 of the first sensing structure 12 and the first conductive layer 121' of the second sensing structure 12' is connected to the voltage output device of the processing circuit, and the other of the two can be grounded. GND in the drawings of this specification all represents grounding. The processing circuit provides a DC voltage of Vcc to the sensor 1. The flexible substrate 11 can be connected to the voltage detection device of the processing circuit to detect the output voltage Vout of the second conductive layer 122. The equivalent circuit is shown in Figure 3, which is a voltage divider circuit. According to the voltage divider formula:

[0086] Wherein, Vout represents the output voltage of the first sensing structure 12; Vcc represents a DC signal of magnitude Vcc; L0 represents the initial length of the second conductive layer 122; d represents the thickness between the second conductive layer 122 and the symmetry axis M of the sensor 1; and α represents the bending angle of the sensor 1. The output voltage Vout serves as a parameter related to the resistance of the second conductive layer 122.

[0087] As can be seen from formula (3), the output voltage Vout is positively correlated with the bending angle α. In other words, the larger the bending angle α, the larger the output voltage. By analyzing the output voltage and its variation, the bending condition of sensor 1 can be determined. For example, by measuring the output voltage Vout of the first sensing structure 12, the bending angle α of sensor 1 can be directly obtained.

[0088] Leads extend from the first conductive layer 121 and the flexible substrate 11 to connect to a processing circuit, which reads resistance-related parameters of the second conductive layer 122. The processing circuit can determine the resistance change of the second conductive layer 122 based on the resistance-related parameters. The resistance change of the second conductive layer 122 can reflect the bending angle of the sensor 1. Therefore, by reading the resistance-related parameters of the second conductive layer 122, the bending deformation of the sensor 1 can be sensitively and accurately sensed.

[0089] Figure 4A is a schematic cross-sectional view of a sensor 1 according to other embodiments of this specification. In some embodiments, as shown in Figure 4A , the multilayer structure further includes a third conductive layer 123. The first conductive layer 121, the second conductive layer 122, and the third conductive layer 123 are arranged adjacent to each other in the thickness direction of the flexible substrate 11. The second conductive layer 122 and the third conductive layer 123 are both located between the first conductive layer 121 and the flexible substrate 11. The conductivity of the third conductive layer 123 is greater than that of the second conductive layer 122; the conductivity of the flexible substrate 11 is less than or equal to that of the second conductive layer 122. In some embodiments, leads can be extended from the first conductive layer 121 and the third conductive layer 123 to connect to a processing circuit to read parameters related to the resistance of the second conductive layer 122. Since the first conductive layer 121 and the third conductive layer 123 are both adjacent to the second conductive layer 122, the leads extended through the first conductive layer 121 and the third conductive layer 123 facilitate reading parameters related to the resistance of the second conductive layer 122.

[0090] In this embodiment, the flexible substrate 11 may be configured to include an insulating flexible material or a high-resistance flexible material, and the resistivity of the flexible substrate 11 is greater than or equal to the resistivity of the second conductive layer 122. For details on the specific material of the flexible substrate 11, please refer to the following description.

[0091] The third conductive layer 123 can be similar to the first conductive layer 121. For the materials, properties, etc. of the third conductive layer 123, please refer to the above description of the first conductive layer 121. Because the conductivity of the first conductive layer 121 and the third conductive layer 123 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the third conductive layer 123 and the conductivity of the first conductive layer 121 are significantly greater than the conductivity of the second conductive layer 122 (for example, the conductivity of the flexible substrate 11 and the conductivity of the first conductive layer 121 are more than 100 times the conductivity of the second conductive layer 122), the resistance of the first conductive layer 121 and the third conductive layer 123 can be approximately negligible. The resistance between the first conductive layer 121 and the flexible substrate 11 is approximately equal to the resistance between the two surfaces of the second conductive layer 122 separated along the thickness direction of the flexible substrate 11.

[0092] The connection relationship between the processing circuit and sensor 1 in the embodiment corresponding to FIG4A is similar to that in the embodiment corresponding to FIG1A , with the only difference being that, in the embodiment corresponding to FIG1A , leads are respectively extended from the first conductive layer 121 and the flexible substrate 11 to connect to the processing circuit, whereas in the embodiment corresponding to FIG4A , leads are respectively extended from the first conductive layer 121 and the third conductive layer 123 to connect to the processing circuit. In other words, the flexible substrate, which has a higher conductivity, is replaced by the third conductive layer 123, which has a higher conductivity. Therefore, the connection relationship between the processing circuit and sensor 1 in the embodiment corresponding to FIG4A can be compared to the connection relationship between the processing circuit and sensor 1 in the embodiment corresponding to FIG1A .

[0093] Compared to the embodiment in which the electrical conductivity of the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122, this embodiment provides a third conductive layer 123, and the third conductive layer 123 and the first conductive layer 121 can respectively lead out leads to connect the processing circuit. There is no need to require the electrical conductivity of the flexible substrate 11, and the flexible substrate 11 can be made of a lower-cost insulating flexible material or a high-resistance flexible material.

[0094] FIG4B is a cross-sectional schematic diagram of a sensor 1 having two sensing structures according to other embodiments of this specification. As shown in FIG4B , the second sensing structure 12' also has a third conductive layer 123'. The structure and performance of the third conductive layer 123' of the second sensing structure 12' are similar to those of the third conductive layer 123 of the first sensing structure 12. For details, please refer to the relevant description of the third conductive layer 123 of the first sensing structure 12. When the sensor 1 also includes a second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the third conductive layer 123 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the third conductive layer 123' of the second sensing structure 12' can be conveniently connected to a processing circuit to read resistance-related parameters of the second conductive layer 122 of the first sensing structure 12 and the resistance-related parameters of the second conductive layer 122 of the second sensing structure 12'.

[0095] The connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to FIG4B is similar to the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to FIG1B , with the only difference being that in the embodiment corresponding to FIG1B , leads are respectively extended from the first conductive layer 121 and the flexible substrate 11 to connect to the processing circuit, while in the embodiment corresponding to FIG4B , leads are respectively extended from the first conductive layer 121 and the third conductive layer 123 to connect to the processing circuit. Therefore, the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to FIG4B can be referred to the connection relationship between the processing circuit and the sensor 1 in the embodiment corresponding to FIG1B (i.e., FIG3 ).

[0096] In some embodiments, the relative dielectric constant of the second conductive layer 122 is greater than 3. The relative dielectric constant is a physical parameter that characterizes the dielectric or polarization properties of a dielectric material. Its value is equal to the ratio of the capacitance of a capacitor of the same size made with the corresponding material as the dielectric medium to the capacitance of a capacitor made with a vacuum as the dielectric medium. The relative dielectric constant also characterizes the material's ability to store electricity, also known as relative permittivity. Materials with a relative dielectric constant greater than 3 are polar materials. In other words, the second conductive layer 122 with a relative dielectric constant greater than 3 has a certain amount of electricity storage capacity. Therefore, the second conductive layer 122 can be equivalent to a parallel combination of a resistor and a capacitor.

[0097] In some embodiments, the relative dielectric constant of the second conductive layer 122 may be greater than or equal to 4. Preferably, the relative dielectric constant of the second conductive layer 122 is greater than 5. In some embodiments, the relative dielectric constant of the second conductive layer 122 is greater than 10.

[0098] Setting the relative dielectric constant of second conductive layer 122 to greater than 3 allows second conductive layer 122 to function as both a resistor and a capacitor. As sensor 1 bends, both the capacitance and resistance of second conductive layer 122 change with the deformation of flexible substrate 11. Therefore, parameters related to capacitance and resistance of second conductive layer 122 can reflect the bending of sensor 1. In this embodiment, the simultaneous presence of capacitance and resistance to reflect the bending of sensor 1 significantly improves the sensitivity and accuracy of sensor 1.

[0099] In addition, by setting the resistance range between the two surfaces of the second conductive layer 122 spaced along the thickness direction of the flexible substrate 11 to 1MΩ~10GΩ, it can also be ensured that the second conductive layer 122 can exhibit both better resistance performance and better capacitance performance, thereby ensuring the sensitivity and accuracy of the sensor.

[0100] In some embodiments, the conductivity of the flexible substrate 11 is greater than that of the second conductive layer 122, and the second conductive layer 122 is disposed adjacent to the flexible substrate 11. In some embodiments, leads extend from the first conductive layer 121 (e.g., the first conductive layer 121 of the first sensing structure 12) and the flexible substrate 11 to connect to a processing circuit for reading parameters related to capacitance and resistance of the second conductive layer 122. The structure of the sensor 1 of this embodiment is similar to that of the sensor 1 of the corresponding embodiment of FIG. 1A , differing only in that the relative dielectric constant of the second conductive layer 122 is required to be greater than 3 in this embodiment, and the parameters read by the processing circuit are different.

[0101] Because the second conductive layer 122 has a certain electrical storage capacity, it acts as both a resistor and a capacitor. The processing circuit can read parameters related to both capacitance and resistance of the second conductive layer 122. Because the conductivity of the first conductive layer 121 and the conductivity of the flexible substrate 11 are both greater than that of the second conductive layer 122, when the conductivity of the flexible substrate 11 and the first conductive layer 121 are significantly greater than that of the second conductive layer 122 (for example, the conductivity of the flexible substrate 11 and the first conductive layer 121 are more than 100 times greater than that of the second conductive layer 122), an equivalent resistance RB1 is formed between the first conductive layer 121 and the flexible substrate 11. Furthermore, because the relative dielectric constant of the second conductive layer 122 is greater than 3, the second conductive layer 122 between the first conductive layer 121 and the flexible substrate 11 also has an equivalent capacitance CB1 in parallel with the equivalent resistance RB1, forming a composite impedance for the sensor 1. The second conductive layer 122 is equivalent to a parallel plate capacitor. The capacitance of the second conductive layer 122 Where S represents the area of ​​the second conductive layer 122, d represents the thickness of the second conductive layer 122, and ε r represents the equivalent dielectric constant of the second conductive layer 122, and ε0 represents the dielectric constant of a vacuum. It can be seen that the capacitance CB1 of the second conductive layer 122 is proportional to the area S of the second conductive layer 122. Combined with the relevant description of FIG2A , the capacitance CB1 of the second conductive layer 122 is proportional to the length LB1 of the second conductive layer 122. The capacitance CB1 of the second conductive layer 122 is positively correlated with the bending angle α of the sensor 1. In other words, the capacitance CB1 of the second conductive layer 122 ∝ S ∝ L ∝ α.

[0102] The parameters related to capacitance and resistance of the second conductive layer 122 include one or more parameters such as voltage value, resistance value, capacitance value, etc. These parameters can reflect the parameters of the capacitance and resistance change value of the second conductive layer 122 after the sensor 1 is bent. The capacitance and resistance related parameters of the second conductive layer 122 can be read out by a processing circuit (such as a charge and discharge circuit). It should be noted that when reading the parameters related to capacitance and resistance of the second conductive layer 122, the parameter read may not be a fixed value, but a variable value. This variable value is based on time change, and the time for the processing circuit to read the parameter can be set. For example, the processing circuit can be set to read the parameters related to capacitance and resistance of the second conductive layer 122 at multiple time points.

[0103] Since the capacitance and resistance of the second conductive layer 122 will change when the sensor 1 is bent and deformed, the parameters related to the capacitance and resistance of the second conductive layer 122 are read by the processing circuit. The resistance change and the capacitance change of the second conductive layer 122 can jointly reflect the bending angle of the sensor 1. By reading the capacitance and resistance related parameters of the second conductive layer 122, the bending deformation of the sensor 1 can be sensitively and accurately sensed.

[0104] In some embodiments, when the sensor 1 includes a second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 can all be connected to a processing circuit to read the parameters related to capacitance and resistance of the first sensing structure 12 and the parameters related to capacitance and resistance of the second sensing structure 12'. In this case, the calculation formula for the capacitance CB1' of the second conductive layer 122' of the second sensing structure 12' is the same as the calculation formula (4) for the capacitance CB1 of the second conductive layer 122 of the first sensing structure 12, that is, Where S represents the area of ​​the second conductive layer 122 ′, d represents the thickness of the second conductive layer 122 ′, and ε r represents the equivalent dielectric constant of the second conductive layer 122', and ε0 represents the dielectric constant of a vacuum. It can be seen that the capacitance CB1' of the second conductive layer 122' is proportional to the area S of the second conductive layer 122'. Combined with the relevant description of FIG2B , when the capacitance CB1' of the second conductive layer 122' is positively correlated with the length LB1' of the second conductive layer 122', the capacitance CB1' of the second conductive layer 122' is negatively correlated with the bending angle α of the sensor 1.

[0105] FIG5A is a schematic cross-sectional view of a sensor 1 according to some other embodiments of the present specification. In some embodiments, as shown in FIG5A , the multilayer structure further includes a fourth conductive layer 124, and the first conductive layer 121, the second conductive layer 122, and the fourth conductive layer 124 are arranged adjacent to each other in the thickness direction of the flexible substrate 11. The second conductive layer 122 and the fourth conductive layer 124 are both located between the first conductive layer 121 and the flexible substrate 11. The conductivity of the flexible substrate 11 is less than or equal to the conductivity of the second conductive layer 122; the conductivity of the fourth conductive layer 124 is greater than the conductivity of the second conductive layer 122. In some embodiments, the first conductive layer 121 and the fourth conductive layer 124 respectively extend leads to connect to a processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122. It should be noted that the fourth conductive layer 124 can be equivalently replaced with the third conductive layer 123 mentioned above.

[0106] In this embodiment, the flexible substrate 11 may be configured to include an insulating flexible material or a high-resistance flexible material, and the resistivity of the flexible substrate 11 is greater than or equal to the resistivity of the second conductive layer 122. For details on the specific material of the flexible substrate 11, please refer to the following description.

[0107] The structure and performance of the fourth conductive layer 124 are similar to those of the third conductive layer 123 described above. For details, please refer to the description of the third conductive layer 123. The sensor 1 of the embodiment corresponding to FIG5A is similar to the sensor 1 of the embodiment corresponding to FIG4A, differing only in that the embodiment corresponding to FIG5A requires that the relative dielectric constant of the second conductive layer 122 be greater than 3, and that the parameters read by the processing circuit are different.

[0108] Because the conductivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are both greater than the conductivity of the second conductive layer 122, when the conductivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are much greater than the conductivity of the second conductive layer 122 (for example, the resistivity of the first conductive layer 121 and the conductivity of the fourth conductive layer 124 are more than 100 times the conductivity of the second conductive layer 122), the second conductive layer between the first conductive layer 121 and the fourth conductive layer 124 forms an equivalent resistor RB1. In addition, because the relative dielectric constant of the second conductive layer 122 is greater than 3, the second conductive layer between the first conductive layer 121 and the fourth conductive layer 124 also forms an equivalent capacitor CB1 in parallel with the equivalent resistor RB1, and the sensor 1 forms a composite impedance.

[0109] Compared to the embodiment in which the electrical conductivity of the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122, this embodiment provides the fourth conductive layer 124 and the first conductive layer 121 to respectively lead out leads to the processing circuit. Therefore, the electrical conductivity of the flexible substrate 11 is not required, and the flexible substrate 11 can be made of an insulating flexible material or a high-resistance flexible material.

[0110] As an example, the processing circuit can be connected to the sensor 1 shown in FIG5A as follows: the voltage output device of the processing circuit is connected to the fourth conductive layer 124 via a fixed resistor with a resistance value of R0, thereby providing a pulsed AC voltage Vi with a peak voltage Vcc to the second conductive layer 122. The first conductive layer 121 is grounded, and the fourth conductive layer 124 can be connected to a voltage detection device to detect the output voltage Vout of the first sensing structure 12. The equivalent circuit is shown in FIG6A. With this configuration, the processing circuit functions as a charge-discharge circuit. Each pulse signal input can provide a charge-discharge signal to the second conductive layer 122, and this charge-discharge process is modulated by the resistance RB1 and equivalent capacitance CB1 of the second conductive layer 122.

[0111] When the input Vi signal is a square wave pulse with a peak value of Vcc,

[0112] Wherein, Vout represents the output voltage of the first sensing structure 12; Vcc represents the peak value of the square wave pulse electrical signal Vi is Vcc; R0 represents the resistance value of the fixed resistor; RB1 represents the resistance value of the second conductive layer 122; CB1 represents the capacitance value of the second conductive layer 122; and t represents the measurement time. The magnitude of the output voltage of the first sensing structure 12 is related to the capacitance CB1 of the second conductive layer 122 and the resistance RB1 of the first conductive layer 121. According to the formula (1) of the resistance RB1 of the second conductive layer 122 mentioned above, the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is negatively correlated with the bending angle α; according to the formula (4) of the capacitance CB1 of the second conductive layer 122 mentioned above, the capacitance CB1 of the second resistive layer of the first sensing structure 12 is positively correlated with the bending angle α. It can be seen from the above formula (6) that the resistance RB1 of the second conductive layer 122 of the first sensing structure 12 is positively correlated with the output voltage Vout of the first sensing structure 12, and the capacitance CB1 of the second conductive layer 122 of the first sensing structure 12 is negatively correlated with the output voltage Vout of the first sensing structure 12. Therefore, the output voltage Vout of the first sensing structure 12 is negatively correlated with the bending angle α. By measuring and analyzing the output voltage Vout of the first sensing structure 12, the bending condition of the sensor 1 (such as the bending angle and bending direction) can be obtained.

[0113] The processing circuit reads parameters related to the capacitance and resistance of the second conductive layer 122. These parameters are modulated by both the resistance RB1 and the capacitance CB1 of the second conductive layer 122. This enables the processing circuit to read parameters related to the capacitance and resistance, enabling it to sensitively and accurately sense bending deformation of the sensor 1. Furthermore, by grounding the first conductive layer 121, it acts as an electrical shield, shielding the sensor 1 from interference sources such as the human body, thereby improving the stability of the sensor 1.

[0114] FIG5B is a cross-sectional schematic diagram of a sensor 1 having two sensing structures according to other embodiments of the present specification. As shown in FIG5B , the second sensing structure 12′ also has a fourth conductive layer 124′. The structure and performance of the fourth conductive layer 124′ of the second sensing structure 12′ are similar to those of the fourth conductive layer 124 of the first sensing structure 12. For details, please refer to the relevant description of the fourth conductive layer 124′ of the first sensing structure 12. When the sensor 1 also includes a second sensing structure 12′, the first conductive layer 121 of the first sensing structure 12, the fourth conductive layer 124 of the first sensing structure 12, the first conductive layer 121′ of the second sensing structure 12′, and the fourth conductive layer 124′ of the second sensing structure 12′ can be conveniently connected to a processing circuit to read resistance-related parameters of the second conductive layer 122 of the first sensing structure 12 and resistance-related parameters of the second conductive layer 122′ of the second sensing structure 12′.

[0115] By way of example only, the processing circuit can be connected to the sensor 1 shown in FIG5B in the following manner: the processing circuit's voltage output device is connected to the second conductive layer 122 of the first sensing structure 12 via a fixed resistor having a resistance value of R0. The processing circuit's voltage output device is connected to the second conductive layer 122' of the second sensing structure 12' via a fixed resistor having a resistance value of R0', thereby providing a pulsed AC voltage Vi having a peak voltage Vcc to the second conductive layer 122 of the first sensing structure 12 and the second conductive layer 122' of the second sensing structure 12'. The first conductive layer 121 of the first sensing structure 12 is grounded, and the first conductive layer 121' of the second sensing structure 12' is grounded. The fourth conductive layer 124 of the first sensing structure 12 and the fourth conductive layer 124' of the second sensing structure 12' can both be connected to a voltage detection device to detect the output voltage Vout of the first sensing structure 12 and the output voltage Vout' of the second sensing structure 12'. The equivalent circuit is shown in FIG6B. Since the structure of the sensor 1 in the embodiment corresponding to FIG5B is merely the structure of the sensor 1 in the embodiment corresponding to FIG5A with the addition of a second sensing structure 12' similar to the first sensing structure 12, the working principle of the equivalent circuit in FIG6B is similar to that of the equivalent circuit in FIG6A. When the input Vi signal is a square wave pulse with a peak value of Vcc,

[0116] Wherein, Vout' represents the output voltage of the second sensing structure 12'; Vcc represents the peak value of the square wave pulse electrical signal Vi is Vcc; R0' represents the resistance value of the fixed resistor; RB1' represents the resistance value of the second conductive layer 122' of the second sensing structure 12'; CB1' represents the capacitance value of the second conductive layer 122' of the second sensing structure 12'; and t represents the measurement time. The magnitude of the output voltage of the second sensing structure 12' is related to the capacitance CB1' of the second conductive layer 122 and the resistance RB1' of the first conductive layer 121. According to the formula (2) for the resistance RB1' of the second conductive layer 122 mentioned above, the resistance RB1' of the second conductive layer 122' of the second sensing structure 12' is negatively correlated with the bending angle α; according to the calculation formula (7) for the capacitance CB1' of the second sensing structure 12' mentioned above, the capacitance CB1' of the second resistive layer of the second sensing structure 12' is positively correlated with the bending angle α. From the above formula (7), it can be seen that the resistance RB1' of the second conductive layer 122' of the second sensing structure 12' is positively correlated with the output voltage Vout' of the second sensing structure 12', and the capacitance CB1' of the second conductive layer 122' of the second sensing structure 12' is negatively correlated with the output voltage Vout' of the sensor 1. Therefore, the output voltage Vout' of the second sensing structure 12' is positively correlated with the bending angle α. By measuring and analyzing the output voltage Vout' of the second sensing structure 12', the bending condition of the sensor 1 (such as the bending angle and bending direction) can be obtained.

[0117] Figure 7A is a schematic cross-sectional view of a sensor 1 according to further embodiments of the present disclosure. In some embodiments, as shown in Figure 7A , the multilayer structure further includes another first conductive layer 126 and another second conductive layer 127. The conductivity of the flexible substrate 11, the first conductive layer 121, and the other first conductive layer 126 are all greater than the conductivity of the second conductive layer 122. The conductivity of the flexible substrate 11, the first conductive layer 121, and the other first conductive layer 126 are all greater than the conductivity of the other second conductive layer 127. The first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, and the other second conductive layer 127 are arranged adjacent to each other in the thickness direction of the flexible substrate 11. The other second conductive layer 127 is arranged adjacent to the flexible substrate 11. In some embodiments, leads are extended from the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 to connect to a processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122 and the other second conductive layer 127. The first conductive layer 121 and the other first conductive layer 126 can serve as electrodes to conveniently lead out signals related to the capacitance and resistance of the second conductive layer 122 . The other first conductive layer 126 and the flexible substrate 11 can serve as electrodes to conveniently lead out signals related to the capacitance and resistance of the other second conductive layer 127 .

[0118] In this embodiment, the flexible substrate 11 may include a flexible material filled with conductive particles. For details about the material of the flexible substrate 11, please refer to the following description.

[0119] The first conductive layer 121, the second conductive layer 122, the other first conductive layer 126 and the other second conductive layer 127 are arranged adjacent to each other in the thickness direction of the flexible substrate 11, which can be understood as follows: one side surface of the second conductive layer 122 is adjacent to the first conductive layer 121, the other side surface of the second conductive layer 122 is adjacent to the other first conductive layer 126, one side surface of the other second conductive layer 127 is adjacent to the other first conductive layer 126, and the other side surface of the other second conductive layer 127 is adjacent to the flexible substrate 11. Because the electrical conductivity of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 is greater than the electrical conductivity of the second conductive layer 122 and the other second conductive layer 127, when the electrical conductivity of the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 is much greater than the electrical conductivity of the second conductive layer 122 and the other second conductive layer 127 (for example, the electrical conductivity of the first conductive layer 121, the other first conductive layer 126, the flexible substrate 11, and the electrical conductivity of the first conductive layer 121 are all more than 100 times the conductivity of the second conductive layer 122 and the other second conductive layer 127), the resistance of the first conductive layer 121, the resistance of the other first conductive layer 126, and the flexible substrate 11 can be approximately negligible, and an equivalent parallel resistance RB1 / / RB2 is formed between the first conductive layer 121 and the flexible substrate 11. In addition, since the relative dielectric constants of the second conductive layer 122 and the other second conductive layer 127 are greater than 3, an equivalent parallel capacitor CB1 / / CB2 connected in parallel with the equivalent parallel resistor RB1 is formed between the first conductive layer 121 and the flexible substrate 11 .

[0120] With this arrangement, the second conductive layer 122 and the further second conductive layer 127 can be equivalent to two parallel capacitors. Compared to the technical solution of reading the capacitance and resistance-related parameters of the second conductive layer 122 of the sensor 1 corresponding to the embodiment of FIG. 1A through a processing circuit, the total capacitance of the sensor 1 is increased. Due to the increase in total capacitance, the accuracy and sensitivity of the sensor 1 can be improved.

[0121] In some embodiments, the first conductive layer 121 and the flexible substrate 11 are grounded. Another first conductive layer 126 is connected to a voltage output device of a processing circuit via a fixed resistor to provide a pulsed AC voltage Vi with a peak voltage Vcc to the second conductive layer 122 and another second conductive layer 127. Leads extend from the first conductive layer 121, another first conductive layer 126, and the flexible substrate 11 to the processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122 and another second conductive layer 127. By way of example only, the fourth conductive layer 124 can be connected to a voltage detection device to detect the output voltage Vout of the sensor 1. The equivalent circuit is shown in Figure 8A.

[0122] In addition, in this embodiment, the grounding of the flexible substrate 11 can completely shield the two sensing structures (the first sensing structure 12 and the second sensing structure 12 ′), thereby reducing mutual interference between the two sensing structures due to coupling capacitance and improving the reliability of the sensor 1 .

[0123] FIG7B is a schematic cross-sectional view of a sensor 1 having two sensing structures according to yet another embodiment of this specification. As shown in FIG7B , the second sensing structure 12′ also has another first conductive layer 126′ and another second conductive layer 127′. The structure and performance of the second first conductive layer 126′ of the second sensing structure 12′ are similar to those of the first first conductive layer 126 of the first sensing structure 12. The structure and performance of the second second conductive layer 127′ of the second sensing structure 12′ are similar to those of the second second conductive layer 127 of the first sensing structure 12. For details regarding the first conductive layer 126 and the second conductive layer 127 of the first sensing structure 12, please refer to the relevant descriptions. When the sensor 1 further includes a second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 can conveniently lead out leads to connect to the processing circuit to read the capacitance and resistance-related parameters of the second conductive layer 122 of the first sensing structure 12, as well as the capacitance and resistance-related parameters of the second conductive layer 122' of the second sensing structure 12'.

[0124] In some embodiments, the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 are all grounded. The other first conductive layer 126 of the first sensing structure 12 and the other first conductive layer 126' of the second sensing structure 12' are connected to a voltage output device of a processing circuit via fixed resistors to provide a pulsed AC voltage Vi with a peak voltage Vcc to the second conductive layer 122 and the other second conductive layer 127 of the first sensing structure 12, as well as the second conductive layer 122' and the other second conductive layer 127' of the second sensing structure 12'. Leads are respectively extended from the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', and the flexible substrate 11 to connect to a processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122 and the other second conductive layer 127 of the first sensing structure 12, as well as parameters related to capacitance and resistance of the second conductive layer 122' and the other second conductive layer 127' of the second sensing structure 12'. As an example, the other first conductive layer 126 of the first sensing structure 12 and the other first conductive layer 126 of the second sensing structure 12' can be connected to a voltage detection device to detect the output voltage Vout of the first sensing structure 12 and the output voltage Vout' of the second sensing structure 12'. The equivalent circuit is shown in FIG8B.

[0125] FIG9A is a schematic cross-sectional view of a sensor 1 according to some other embodiments of the present disclosure. In some embodiments, as shown in FIG9A , the multilayer structure further includes another first conductive layer 126, another second conductive layer 127, and a fifth conductive layer 125. The first conductive layer 121, the second conductive layer 122, the another first conductive layer 126, the another second conductive layer 127, and the fifth conductive layer 125 are arranged adjacent to each other in the thickness direction of the flexible substrate 11. The conductivity of the flexible substrate 11 is less than or equal to the conductivity of the second conductive layer 122, and the conductivity of the flexible substrate 11 is less than or equal to the conductivity of the another second conductive layer 127. The conductivity of the first conductive layer 121, the conductivity of the fifth conductive layer 125, and the conductivity of the another first conductive layer 126 are all greater than the conductivity of the second conductive layer 122. The conductivity of the fifth conductive layer 125, the conductivity of the first conductive layer 121, and the conductivity of the another first conductive layer 126 are all greater than the conductivity of the another second conductive layer 127.

[0126] In this embodiment, the flexible substrate 11 may be configured to include an insulating flexible material or a high-resistance flexible material, and the resistivity of the flexible substrate 11 is greater than or equal to the resistivity of the second conductive layer 122. For details on the specific material of the flexible substrate 11, please refer to the following description.

[0127] The first conductive layer 121, the second conductive layer 122, the other first conductive layer 126, the other second conductive layer 127 and the fifth conductive layer 125 are arranged adjacent to each other in the thickness direction of the flexible substrate 11, which can be understood as: one side surface of the second conductive layer 122 is adjacent to the first conductive layer 121, the other side surface of the second conductive layer 122 is adjacent to the other first conductive layer 126, one side surface of the other second conductive layer 127 is adjacent to the other first conductive layer 126, and the other side surface of the other second conductive layer 127 is adjacent to the fifth conductive layer 125. Since the conductivity of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 is greater than the conductivity of the second conductive layer 122 and the other second conductive layer 127, when the conductivity of the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 is much greater than the conductivity of the second conductive layer 122 and the other second conductive layer 127 (for example, the conductivity of the first conductive layer 121, the other first conductive layer 126, the fifth conductive layer 125, and the conductivity of the first conductive layer 121 are all more than 100 times the conductivity of the second conductive layer 122 and the other second conductive layer 127), the resistance of the first conductive layer 121, the resistance of the other first conductive layer 126, and the resistance of the fifth conductive layer 125 can be approximately ignored, and an equivalent parallel resistance RB1 / / RB2 is formed between the first conductive layer 121 and the fifth conductive layer 125. In addition, since the relative dielectric constants of the second conductive layer 122 and the other second conductive layer 127 are greater than 3, an equivalent parallel capacitor CB1 / / CB2 connected in parallel with the equivalent parallel resistor RB1 is formed between the first conductive layer 121 and the flexible substrate 11 .

[0128] The fifth conductive layer 125 can be similar to the first conductive layer 121 (or the third conductive layer 123 and the fourth conductive layer 124 above). Regarding the materials, properties, etc. of the fifth conductive layer 125, please refer to the above description of the first conductive layer 121 (or the third conductive layer 123 and the fourth conductive layer 124 above).

[0129] Through this configuration, the second conductive layer 122 and the further second conductive layer 127 can be equivalent to two parallel capacitors. Compared to the technical solution of reading the capacitance and resistance-related parameters of the second conductive layer 122 of the sensor 1 corresponding to the embodiment of FIG. 5A through a processing circuit, the total capacitance of the sensor 1 is increased. Due to the increase in total capacitance, the accuracy and sensitivity of the sensor 1 can be improved. In addition, compared to the embodiment in which the conductivity of the flexible substrate 11 is greater than the conductivity of the second conductive layer 122 and the conductivity of the further second conductive layer 127, this embodiment provides leads from the fifth conductive layer 125 and the first conductive layer 121 to connect to the processing circuit, eliminating the need for conductivity requirements for the flexible substrate 11. The flexible substrate 11 can be made of an insulating flexible material or a high-resistance flexible material.

[0130] In some embodiments, the first conductive layer 121 and the fifth conductive layer 125 are grounded, and leads from the other first conductive layer 126 are connected to a voltage output device of the processing circuit via a fixed resistor. In some embodiments, leads from the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 are connected to the processing circuit to read parameters related to capacitance and resistance of the second conductive layer 122 and the other second conductive layer 127. In the embodiment corresponding to FIG9A , the connection relationship between the processing circuit and sensor 1 is similar to that in the embodiment corresponding to FIG7A , with the only difference being that, in the embodiment corresponding to FIG7A , leads from the first conductive layer 121, the other first conductive layer 126, and the flexible substrate 11 are connected to the processing circuit. In this embodiment, leads from the first conductive layer 121, the other first conductive layer 126, and the fifth conductive layer 125 are connected to the processing circuit. In other words, the flexible substrate 11, which has higher conductivity, is replaced by the fifth conductive layer 125, which has higher conductivity. Therefore, the connection relationship between the processing circuit and sensor 1 in the embodiment corresponding to FIG9A can be compared to the connection relationship between the processing circuit and sensor 1 in the embodiment corresponding to FIG7A .

[0131] FIG9B is a cross-sectional schematic diagram of a sensor having two sensing structures according to other embodiments of this specification. In some embodiments, as shown in FIG9B , when the sensor 1 includes a second sensing structure 12′, the second sensing structure 12′ also includes another first conductive layer 126′, another second conductive layer 127′, and a fifth conductive layer 125′. The structure and performance of the other first conductive layer 126′ of the second sensing structure 12′ are similar to those of the other first conductive layer 126 of the first sensing structure 12. The structure and performance of the other second conductive layer 127′ of the second sensing structure 12′ are similar to those of the other second conductive layer 127 of the first sensing structure 12. The structure and performance of the fifth conductive layer 125′ of the second sensing structure 12′ are similar to those of the fifth conductive layer 125 of the first sensing structure 12. For details regarding the first sensing structure 12, please refer to the relevant description of the first sensing structure 12. When the sensor 1 also includes a second sensing structure 12', the first conductive layer 121 of the first sensing structure 12, the other first conductive layer 126 of the first sensing structure 12, the fifth conductive layer 125 of the first sensing structure 12, the first conductive layer 121' of the second sensing structure 12', the other first conductive layer 126' of the second sensing structure 12', and the fifth conductive layer 125' of the second sensing structure 12' can be conveniently connected to the processing circuit to read parameters related to the capacitance and resistance of the second conductive layer 122 of the first sensing structure 12, as well as parameters related to the capacitance and resistance of the second conductive layer 122' of the second sensing structure 12'.

[0132] In some embodiments, the first conductive layer 121 of the first sensing structure 12, the first conductive layer 121 of the second sensing structure 12', the fifth conductive layer 125 of the first sensing structure 12, and the fifth conductive layer 125 of the second sensing structure 12' are all grounded; the other first conductive layer 126 of the first sensing structure 12 and the other first conductive layer 126 of the second sensing structure 12' are connected to the voltage output device of the processing circuit through fixed resistors to provide a pulsed AC voltage Vi with a peak voltage Vcc to the second conductive layer 122 and the other second conductive layer 127. Leads are provided from first conductive layer 121 of first sensing structure 12, another first conductive layer 126 of first sensing structure 12, first conductive layer 121' of second sensing structure 12', another first conductive layer 126' of second sensing structure 12', fifth conductive layer 125 of first sensing structure 12, and fifth conductive layer 125' of second sensing structure 12' to connect to a processing circuit for reading capacitance- and resistance-related parameters of second conductive layer 122 and another second conductive layer 127 of first sensing structure 12, as well as capacitance- and resistance-related parameters of second conductive layer 122' and another second conductive layer 127' of second sensing structure 12'. By way of example only, another first conductive layer 126 of first sensing structure 12 and another first conductive layer 126' of second sensing structure 12' can be connected to a voltage detection device to detect output voltage Vout of first sensing structure 12 and output voltage Vout' of second sensing structure 12'.

[0133] In some embodiments, the voltage output device of the processing circuit outputs a pulse voltage. The parameters related to capacitance and resistance include voltage values ​​at multiple time points. The voltage values ​​at multiple time points are voltage values ​​read by the voltage detection device of the processing circuit at multiple different time points based on the pulse voltage output by the voltage output device of the processing circuit to the sensor 1. By substituting the time of the read voltage value into the above formula (6) or (7), the output voltage Vout of the first sensing structure 12 or the output voltage Vout' of the second sensing structure 12' at the corresponding time point can be determined.

[0134] In some embodiments, the saturation voltage amplitude on the second conductive layer 122 is less than the amplitude of the pulse voltage. The saturation voltage amplitude may refer to the voltage value that the second conductive layer 122 can reach after charging the second conductive layer 122 (due to the second conductive layer 122 having capacitive properties) for a sufficient time. In embodiments where the processing circuit reads parameters related to capacitance and resistance of the second conductive layer 122, since the second conductive layer 122 can be equivalent to a parallel connection of a resistor and a capacitor, the resistance of the second conductive layer 122 cannot be considered infinite. This affects the output voltage Vout of the first sensing structure 12 and the output voltage Vout' of the second sensing structure 12', causing the saturation voltage amplitude on the second conductive layer 122 to be less than the amplitude of the pulse voltage.

[0135] In some embodiments, the saturation voltage amplitude of the second conductive layer 122 of the first sensing structure 12 is not equal to the saturation voltage amplitude of the second conductive layer 122' of the second sensing structure 12'. In some embodiments, when the sensor 1 is bent, the second conductive layer 122 of the first sensing structure 12 and the second conductive layer 122' of the second sensing structure 12' change differently. For example, when the sensor 1 is bent toward the side where the second sensing structure 12' is located, the area of ​​the second conductive layer 122 of the first sensing structure 12 increases and the resistance decreases; while the area of ​​the second conductive layer 122' of the second sensing structure 12' decreases and the resistance increases. This results in the saturation voltage amplitude of the second conductive layer 122 of the first sensing structure 12 being unequal to the saturation voltage amplitude of the second conductive layer 122' of the second sensing structure 12'.

[0136] For illustrative purposes only, in a technical solution (i.e., a composite impedance solution) for reading the capacitance and resistance-related parameters of the second conductive layer 122 through a processing circuit under square wave excitation, the curve of the output voltage of the first sensing structure 12 is shown as curve Vout(0) in FIG10 , and the curve of the output voltage of the second sensing structure 12′ is shown as curve Vout′(0) in FIG10 . For comparison, in a technical solution for reading the relevant parameters of the second conductive layer having only capacitance and no resistance through a processing circuit under square wave excitation, the curve of the output voltage of the first sensing structure is shown as curve Vout(1) in FIG10 , and the curve of the output voltage of the second sensing structure is shown as Vout′(1) in FIG10 . In addition, it should be noted that FIG10 is a graph with time as the horizontal axis and voltage as the vertical axis, where Vi represents the amplitude of the square wave.

[0137] As shown in FIG10 , when the charging time is long enough for the output to reach the saturation voltage amplitude, in the technical solution of reading the capacitance and resistance related parameters of the second conductive layer 122 through the processing circuit, the relationship between the saturation value of the output voltage of the first sensing structure 12, the saturation value of the output voltage of the second sensing structure 12', and the amplitude of the square wave is: Vout(0)≠Vout'(0), and Vout(0))<Vi, Vout'(0)<Vi; in the technical solution of reading the parameters of the second conductive layer having only capacitance performance but no resistance performance through the processing circuit, the relationship between the saturation value of the output voltage of the first sensing structure 12, the saturation value of the output voltage of the second sensing structure 12', and the amplitude of the square wave is: Vout(1)=Vout'(1)=Vi. It can be seen from this that in these two technical solutions, the output voltage of the first sensing structure 12 and the output voltage of the second sensing structure 12' are different.

[0138] Figures 11A-11C are schematic cross-sectional views of a sensor 1 including a third sensing structure 13 and a fourth sensing structure 13', according to some embodiments of the present disclosure. In some embodiments, as shown in Figures 11A-11C, the sensor 1 further includes a third sensing structure 13 and a fourth sensing structure 13'. The third sensing structure 13 comprises a multilayer structure arranged on one side of the flexible substrate 11 in the width direction, while the fourth sensing structure 13' comprises a multilayer structure arranged on the other side of the flexible substrate 11 in the width direction. The layers of the multilayer structure of the third sensing structure 13 are stacked along the width direction of the flexible substrate 11, while the layers of the multilayer structure of the fourth sensing structure 13' are stacked along the width direction of the flexible substrate 11. In other words, the third sensing structure 13 and the fourth sensing structure 13' are located on opposite sides of the width direction of the flexible substrate 11. The width direction of the flexible substrate 11 may be the w direction as shown in the figures (Figures 11A-11C).

[0139] In some embodiments, the structures of the third sensing structure 13 and the fourth sensing structure 13' can be similar. The multilayer structures of the third sensing structure 13 and the fourth sensing structure 13' both include a sixth conductive layer and a seventh conductive layer, which are arranged adjacent to each other. The conductivity of the sixth conductive layer is greater than that of the seventh conductive layer, and the seventh conductive layer is located between the sixth conductive layer and the flexible substrate 11. The resistance of the seventh conductive layer changes with the deformation of the flexible substrate 11. The sixth conductive layer is similar to the first conductive layer 121, and the seventh conductive layer is similar to the second conductive layer 122. For details, please refer to the relevant description above.

[0140] The third sensing structure 13 and the fourth sensing structure 13' are sensing structures of the sensor 1 for measuring bending deformation along the width direction (w direction). The third sensing structure 13 and the fourth sensing structure 13' may include a multilayer structure in any of the above embodiments. It should be noted that, in this embodiment, the width direction and the thickness direction can be understood in a broad sense. The width direction may refer to a direction that is different from (not parallel to) the thickness direction. For example, the width direction and the thickness direction may have an angle of 40°; for another example, the width direction and the thickness direction may have an angle of 75°. For another example, the width direction may be perpendicular to the thickness direction.

[0141] In some embodiments, the sensor 1 may be a symmetrical structure in the width direction of the flexible substrate 11, and the axis of symmetry may be the dotted line N in FIG11A. That is, the third sensing structure 13 and the fourth sensing structure 13' include the same components, and the structures and sizes of the components included in the two are also the same.

[0142] By providing four sensing structures (first sensing structure 12, second sensing structure 12', third sensing structure 13, and fourth sensing structure 13'), sensor 1 can be sensitive to deformations (e.g., bending) in different directions (width and thickness). In other words, the first sensing structure 12 and second sensing structure 12' make sensor 1 sensitive to bending in the thickness direction, while the third sensing structure 13 and fourth sensing structure 13' make sensor 1 sensitive to bending in the width direction. When the width direction is perpendicular to the thickness direction, sensor 1 can sense bending deformation in both perpendicular directions.

[0143] In some embodiments, the ratio of the thickness to the width of the flexible substrate 11 ranges from 0.2 to 5. In some embodiments, the ratio of the thickness to the width of the flexible substrate 11 ranges from 0.3 to 3. In some embodiments, by setting the ratio of the thickness to the width of the flexible substrate 11 to 0.3 to 3, when the sensor 1 bends, it can ensure that the sensor 1 can accurately and sensitively sense bending in both the thickness direction and the width direction.

[0144] In some embodiments, the first conductive layer 121, the second conductive layer 122, and the flexible substrate 11 all include elastic materials. The elastic material can enable the first conductive layer 121, the second conductive layer 122, and the flexible substrate 11 to return to their original shape when the external force applied thereto disappears. In some embodiments, other conductive layers in the sensor 1 (such as the third conductive layer 123, the fourth conductive layer 124, the fifth conductive layer 125, the other first conductive layer 126, and / or the other second conductive layer 127) include elastic materials. In some embodiments, the elastic material includes silicone, rubber, polydimethylsiloxane (PDMS), polyurethane, styrene-butadiene-styrene (SBS), and the like.

[0145] In some embodiments, the elastic material of the first conductive layer 121 and the elastic material of the second conductive layer 122 are both filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer 121 is greater than the density of the conductive particles filled in the elastic material of the second conductive layer 122. By adjusting the density of the conductive particles filled in the elastic material, the conductivity of the conductive layer can be adjusted. In some embodiments, the conductive particles include carbon nanotubes, silver nanowires, carbon black, graphite powder, graphene, etc. By setting the density of the conductive particles filled in the elastic material of the first conductive layer 121 to be greater than the density of the conductive particles filled in the elastic material of the second conductive layer 122, the conductivity of the first conductive layer 121 can be increased compared to that of the second conductive layer 122.

[0146] In some embodiments, the elastic material of other conductive layers in the sensor 1 (e.g., the third conductive layer 123, the fourth conductive layer 124, the fifth conductive layer 125, the other first conductive layer 126, and / or the other second conductive layer 127) is filled with conductive particles. Furthermore, the density of the conductive particles can be adjusted according to the required conductivity of the corresponding conductive layer.

[0147] In some embodiments, when other conductive structures are provided between the second conductive layer 122 and the flexible substrate 11, the flexible substrate 11 is preferably made of an insulating material. Examples of these other conductive structures include the third conductive layer 123, the fourth conductive layer 124, and the fifth conductive layer 125 described above. In other words, the flexible substrate 11 is substantially non-conductive when the sensor 1 is operating. Because the other conductive structures provided between the second conductive layer 122 and the flexible substrate 11 can function as electrodes, using an insulating material to manufacture the flexible substrate 11 prevents conductive interference with the normal operation of the sensor 1 due to the flexible substrate 11's electrical conduction. Therefore, a flexible substrate 11 made of an insulating material can ensure stable sensor operation in these scenarios.

[0148] In some embodiments, the thickness of the first conductive layer 121 may be greater than or approximately equal to the thickness of the second conductive layer 122. In some embodiments, the thickness of the first conductive layer 121 may be approximately equal to the thickness of the second conductive layer 122. In some embodiments, the thickness of the flexible substrate 11 may be greater than the thickness of the first conductive layer 121. In some embodiments, the thickness of the flexible substrate 11 may be greater than the thickness of the second conductive layer 122.

[0149] In some embodiments, the thickness of the first conductive layer 121 may range from 3um to 2000um. In some embodiments, the thickness of the first conductive layer 121 ranges from 5um to 150um. In some embodiments, the thickness of the second conductive layer 122 ranges from 3um to 200um. In some embodiments, the thickness of the second conductive layer 122 ranges from 5um to 150um. The thinner the thickness of the second conductive layer 122, the better its capacitance performance, that is, the closer the second conductive layer 122 is to a capacitor, the more accurate the bending condition of the sensor 1 sensed based on the parameters related to the capacitance and resistance of the second conductive layer 122 read by the processing circuit. Setting the thickness range of the second conductive layer to 5um to 150um can ensure the accuracy of the sensor 1 without excessively increasing the difficulty and cost of processing, thereby ensuring performance while reducing costs.

[0150] In some embodiments, the thickness of the flexible substrate 11 ranges from 200um to 5500um. In some embodiments, the thickness of the flexible substrate 11 ranges from 300um to 5000um. The thicker the flexible substrate 11 is, the greater the change in the area of ​​the second conductive layer 122 on the flexible substrate 11 and the greater the change in the resistance of the second conductive layer 122 at the same bending angle, and the more accurate the bending condition of the sensor 1 sensed based on the capacitance-related parameters or capacitance-and-resistance-related parameters read by the processing circuit. Setting the thickness range of the flexible substrate 11 to 300um to 5000um can not only ensure the accuracy of the sensor 1, but also avoid the restriction of human activities caused by the use of a sensor with an overly thick flexible substrate 11 after being applied to a smart wearable device.

[0151] In some embodiments, the thickness range of the third conductive layer 123 can be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the fourth conductive layer 124 can be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the fifth conductive layer 125 can be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the other first conductive layer 126 can be similar to the thickness range of the first conductive layer 121. In some embodiments, the thickness range of the other second conductive layer 127 can be similar to the thickness range of the first conductive layer 121.

[0152] In some embodiments, the width of the first conductive layer 121 is less than or equal to the width of the second conductive layer 122. In some embodiments, the width of the second conductive layer 122 is less than or equal to the width of the flexible substrate 11. In some embodiments, the width of the second conductive layer 122 is less than or equal to the width of the third conductive layer.

[0153] By setting the width in this way, while ensuring that the signal of the second conductive layer 122 (such as parameters related to the resistance of the second conductive layer 122, and parameters related to the capacitance and resistance of the second conductive layer 122) can be read stably, the sensor structure is guaranteed to be regular and stable, which can ensure the user experience after being applied to smart wearable devices.

[0154] In some embodiments, the width of the fourth conductive layer 124 can have a similar relationship to the width of the flexible substrate 11 or other conductive layers as the width of the third conductive layer 123. In some embodiments, the width of the fifth conductive layer 125 can have a similar relationship to the width of the flexible substrate 11 or other conductive layers as the width of the third conductive layer 123. In some embodiments, the width of the other first conductive layer 126 can have a similar relationship to the width of the flexible substrate 11 or other conductive layers as the width of the first conductive layer 121. In some embodiments, the width of the other second conductive layer 127 can have a similar relationship to the width of the flexible substrate 11 or other conductive layers as the width of the second conductive layer 122. In some embodiments, the width of the sixth conductive layer can have a similar relationship to the width of the flexible substrate 11 or other conductive layers as the width of the first conductive layer 121. In some embodiments, the relationship between the width of the seventh conductive layer and the width of the flexible substrate 11 or other conductive layers can be similar to the relationship between the width of the second conductive layer 122 and the width of the flexible substrate 11 or other conductive layers.

[0155] In some implementations, the sensor 1 further includes a protective cover 14. In some embodiments, the protective cover 14 is made of an insulating and elastic flexible material or a highly resistive and elastic flexible material. The resistivity of the protective cover 14 is greater than or equal to that of the conductive layer, the flexible substrate 11. The protective cover 14 protects the sensor (e.g., the first sensing structure, the second sensing structure, the flexible substrate 11, etc.). The width of the protective cover 14 can be greater than or equal to the maximum width of the multilayer structure.

[0156] In some embodiments, the side of the first conductive layer 121 facing away from the flexible substrate 11 is covered with a first protective structure. The first protective structure can isolate the outer surface of the first conductive layer 121 (the side facing away from the flexible substrate 11) from the external environment. In some embodiments, the exposed surface of the flexible substrate 11 is covered with a second protective structure. The exposed surface of the flexible substrate 11 refers to the surface not covered by the sensing structure (e.g., the first sensing structure or the second sensing structure). In other words, the surface of the flexible substrate 11 not covered by the sensing structure is covered with the second protective structure, thereby isolating the flexible substrate 11 from the external environment. The first and second protective structures can ensure stable operation of the sensor. In particular, when the flexible substrate 11 functions as an electrode (i.e., when the conductivity of the flexible substrate 11 is greater than the conductivity of the second conductive layer 122), if the flexible substrate 11 is directly exposed to the external environment, it can easily interfere with the sensing of the sensor 1 or damage the sensor. However, the second protective structure can ensure safe and stable operation of the sensor. In some embodiments, as shown in Figures 7A and 7B, the first and second protective structures are combined to form a protective cover 14. The protective cover 14 can be integrally mounted on the outside of the sensor 1. In some embodiments, the first protective structure and the second protective structure can form an integrated protective cover 14. It should be noted that all embodiments in this specification can have the above-mentioned first protective structure and second protective structure.

[0157] Figures 11A-11C respectively illustrate three situations of the protective cover 14 in the case of four sensing structures. In the embodiment shown in Figure A, the protective cover 14 includes a first protective structure that protects the surface of the first conductive layer 121 on one side away from the flexible substrate 11. In the embodiments shown in Figures 11B and 11C, the protective cover 14 includes not only the first protective structure, but also a third protective structure that protects the sides of all sensing structures (such as the first sensing structure 12, the second sensing structure 12', the third sensing structure 13, and the fourth sensing structure 13') and the exposed surface of the flexible substrate 11. The difference between the embodiments of Figures 11B and 11C is that in the embodiment shown in Figure 11B, adjacent third protective structures are connected into an integrated structure, and the sensor 1 with the protective cover 14 presents a regular rectangle.

[0158] While the basic concepts have been described above, it will be apparent to those skilled in the art that the detailed disclosure is merely illustrative and does not limit this specification. Although not explicitly stated herein, various modifications, improvements, and revisions to this specification may be made by those skilled in the art. Such modifications, improvements, and revisions are suggested in this specification and remain within the spirit and scope of the exemplary embodiments of this specification.

[0159] This specification also uses specific terms to describe the embodiments of this specification. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a feature, structure, or characteristic associated with at least one embodiment of this specification. Therefore, it should be emphasized and noted that references to "one embodiment," "an embodiment," or "an alternative embodiment" two or more times in different locations in this specification do not necessarily refer to the same embodiment. Furthermore, certain features, structures, or characteristics of one or more embodiments of this specification may be appropriately combined.

[0160] In addition, unless expressly stated in the claims, the order of the processing elements and sequences, the use of alphanumeric characters, or the use of other names described in this specification are not intended to limit the order of the processes and methods of this specification. Although the above disclosure discusses some of the invention embodiments currently considered useful through various examples, it should be understood that such details are for illustrative purposes only, and the appended claims are not limited to the disclosed embodiments. On the contrary, the claims are intended to cover all modifications and equivalent combinations that are consistent with the spirit and scope of the embodiments of this specification. For example, although the system components described above can be implemented by hardware devices, they can also be implemented only by software solutions, such as installing the described system on an existing server or mobile device.

[0161] Similarly, it should be noted that, in order to simplify the presentation of this specification and thus facilitate understanding of one or more embodiments of the invention, the foregoing descriptions of the embodiments of this specification sometimes combine multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not imply that the subject matter of this specification requires more features than those recited in the claims. In fact, an embodiment may have fewer features than all of the features of a single disclosed embodiment.

[0162] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required characteristics of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of this specification are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0163] Each patent, patent application, patent application publication, and other materials, such as articles, books, specifications, publications, and documents, cited in this specification is hereby incorporated by reference in its entirety. This includes application history documents that are inconsistent with or conflict with the content of this specification, as well as documents (currently or subsequently attached to this specification) that limit the broadest scope of the claims of this specification. It should be noted that if the descriptions, definitions, and / or terminology used in the accompanying materials are inconsistent or conflicting with the content of this specification, the descriptions, definitions, and / or terminology used in this specification will control.

[0164] Finally, it should be understood that the embodiments described in this specification are intended only to illustrate the principles of the embodiments of this specification. Other variations may also fall within the scope of this specification. Therefore, by way of example and not limitation, alternative configurations of the embodiments of this specification may be considered consistent with the teachings of this specification. Accordingly, the embodiments of this specification are not limited to the embodiments explicitly described and illustrated in this specification.

Claims

1. A sensor, characterized in that: include: A flexible substrate and a first sensing structure, wherein the first sensing structure includes a multilayer structure arranged on one side surface of the flexible substrate in a thickness direction; each layer of the multilayer structure of the first sensing structure is stacked along the thickness direction of the flexible substrate; The multilayer structure of the first sensing structure includes a first conductive layer and a second conductive layer, the first conductive layer and the second conductive layer are arranged adjacent to each other; the second conductive layer is located between the first conductive layer and the flexible substrate; and the resistance of the second conductive layer changes with the deformation of the flexible substrate.

2. The sensor according to claim 1, characterized in that The resistance between two surfaces of the second conductive layer spaced apart in the thickness direction of the flexible substrate is in a range of 1 MΩ to 10 GΩ.

3. The sensor according to claim 1, characterized in that The electrical conductivity of the first conductive layer and the flexible substrate is greater than the electrical conductivity of the second conductive layer; and the second conductive layer is arranged adjacent to the flexible substrate.

4. The sensor according to claim 1, characterized in that The multilayer structure further includes a third conductive layer, wherein the first conductive layer, the second conductive layer and the third conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; the second conductive layer and the third conductive layer are both located between the first conductive layer and the flexible substrate; The electrical conductivity of the first conductive layer and the third conductive layer is greater than the electrical conductivity of the second conductive layer; and the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the second conductive layer.

5. The sensor according to claim 3 or 4, characterized in that The resistance-related parameter of the second conductive layer is read by the processing circuit.

6. The sensor according to claim 1, characterized in that The relative dielectric constant of the second conductive layer is greater than 3.

7. The sensor according to claim 3 or 4, characterized in that The parameters related to capacitance and resistance of the second conductive layer are read by a processing circuit.

8. The sensor according to claim 1, characterized in that The multilayer structure further includes another first conductive layer and another second conductive layer; the conductivity of the flexible substrate, the first conductive layer and the another first conductive layer is greater than the conductivity of the second conductive layer, and the conductivity of the flexible substrate, the first conductive layer and the another first conductive layer is greater than the conductivity of the another second conductive layer; The first conductive layer, the second conductive layer, the other first conductive layer and the other second conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; and the other second conductive layer is arranged adjacent to the flexible substrate.

9. The sensor according to claim 8, characterized in that The first conductive layer and the flexible substrate are grounded; the other first conductive layer is connected to a voltage output device of a processing circuit through a fixed resistor.

10. The sensor according to claim 1, characterized in that The multilayer structure further comprises another first conductive layer, another second conductive layer and a fifth conductive layer; The first conductive layer, the second conductive layer, the another first conductive layer, the another second conductive layer and the fifth conductive layer are arranged adjacent to each other in sequence in the thickness direction of the flexible substrate; The electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the second conductive layer, and the electrical conductivity of the flexible substrate is less than or equal to the electrical conductivity of the other second conductive layer; the electrical conductivity of the first conductive layer, the fifth conductive layer and the other first conductive layer are all greater than the electrical conductivity of the second conductive layer, and the electrical conductivity of the first conductive layer, the fifth conductive layer and the other first conductive layer are all greater than the electrical conductivity of the other second conductive layer.

11. The sensor according to claim 10, characterized in that The first conductive layer and the fifth conductive layer are grounded, and the lead wire extending from the other first conductive layer is connected to a voltage output device of a processing circuit through a fixed resistor.

12. The sensor according to claim 8 or 10, characterized in that The relative dielectric constant of the another second conductive layer is greater than 3.

13. The sensor according to claim 4 or 10, characterized in that: The flexible substrate is made of insulating material.

14. The sensor according to claim 9 or 11, characterized in that The parameters related to capacitance and resistance of the second conductive layer and the another second conductive layer are read by a processing circuit.

15. The sensor according to claim 14, characterized in that The voltage output device of the processing circuit outputs a pulse voltage, and the parameters related to capacitance and resistance include voltage values ​​at multiple time points.

16. The sensor according to claim 15, characterized in that The amplitude of the saturation voltage on the second conductive layer is smaller than the amplitude of the pulse voltage.

17. The sensor according to claim 1, characterized in that The sensor also includes a second sensing structure; The second sensing structure includes a multilayer structure arranged on the other side surface of the flexible substrate in the thickness direction; each layer of the multilayer structure of the second sensing structure is stacked along the thickness direction of the flexible substrate; The multilayer structure of the second sensing structure also includes a first conductive layer and a second conductive layer, the first conductive layer of the second sensing structure and the second conductive layer of the second sensing structure being arranged adjacent to each other; The conductivity of the first conductive layer of the second sensing structure is greater than the conductivity of the second conductive layer of the second sensing structure, and the second conductive layer of the second sensing structure is located between the first conductive layer of the second sensing structure and the flexible substrate; The resistance of the second conductive layer of the second sensing structure changes with the deformation of the flexible substrate.

18. The sensor according to claim 17, characterized in that Reading detection parameters of the first sensing structure and the second sensing structure respectively through a processing circuit; wherein the detection parameters include: a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the first sensing structure, or a parameter related to resistance or a parameter related to capacitance and resistance of the second conductive layer of the second sensing structure; and The processing circuit performs differential processing on the detection parameters of the first sensing structure and the detection parameters of the second sensing structure, and determines the deformation parameters of the flexible substrate based on the result of the differential processing.

19. The sensor according to claim 18, characterized in that A saturation voltage amplitude of the second conductive layer of the first sensing structure is not equal to a saturation voltage amplitude of the second conductive layer of the second sensing structure.

20. The sensor according to claim 17, characterized in that Also includes a third sensing structure and a fourth sensing structure; the third sensing structure includes a multilayer structure arranged on one side surface in the width direction of the flexible substrate; the fourth sensing structure includes a multilayer structure arranged on the other side surface in the width direction of the flexible substrate; each layer of the multilayer structure of the third sensing structure is stacked along the width direction of the flexible substrate, and each layer of the multilayer structure of the fourth sensing structure is stacked along the width direction of the flexible substrate; The multilayer structures of the third sensing structure and the fourth sensing structure both include a sixth conductive layer and a seventh conductive layer, and the sixth conductive layer and the seventh conductive layer are arranged adjacent to each other; the conductivity of the sixth conductive layer is greater than the conductivity of the seventh conductive layer, and the seventh conductive layer is located between the sixth conductive layer and the flexible substrate; the resistance of the seventh conductive layer changes with the deformation of the flexible substrate.

21. The sensor according to claim 20, characterized in that The width direction is perpendicular to the thickness direction.

22. The sensor according to claim 21, characterized in that The ratio of the thickness to the width of the flexible substrate is in the range of 0.3 to 3.

23. The sensor according to claim 1, characterized in that The first conductive layer, the second conductive layer and the flexible substrate all include elastic materials.

24. The sensor according to claim 23, characterized in that The elastic material of the first conductive layer and the elastic material of the second conductive layer are both filled with conductive particles; the density of the conductive particles filled in the elastic material of the first conductive layer is greater than the density of the conductive particles filled in the elastic material of the second conductive layer.

25. The sensor according to claim 1, characterized in that The thickness of the first conductive layer is in the range of 5um to 150um; and / or, The thickness of the second conductive layer is in the range of 5um to 150um; and / or, The thickness of the flexible substrate ranges from 300um to 5000um.

26. The sensor according to claim 1, characterized in that The width of the first conductive layer is less than or equal to the width of the second conductive layer; and the width of the second conductive layer is less than or equal to the width of the flexible substrate.

27. The sensor according to claim 1, characterized in that A first protective structure is also included, and the first protective structure covers a side of the first conductive layer away from the flexible substrate.

28. The sensor according to claim 1, characterized in that The exposed surface of the flexible substrate is covered with a second protective structure.

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