Semiconductor device manufacturing method and semiconductor device

Abstract

A semiconductor device manufacturing method according to an embodiment includes a first attaching step, a grinding step, a singulation step, and a support substrate separation step. The first attaching step is a step for attaching, to a support substrate, a device surface on which a circuit pattern of a base material made of a semiconductor material is formed. The grinding step is a step for grinding the surface on the opposite side to the device surface while the device surface is supported by the support substrate. The singulation step is a step for cutting the base material while the base material is supported by the support substrate, and singulating the base material. The support substrate separation step is a step for separating the support substrate from the base material.

Description

Semiconductor device manufacturing method and semiconductor device

[0001] This application claims priority to Japanese Patent Application No. 2023-125146, filed on July 31, 2023, the contents of which are incorporated herein by reference.

[0002] Semiconductor devices such as metal oxide semiconductor field effect transistors (MOSFETs) are used for applications such as power conversion. These semiconductor devices are manufactured by forming a circuit pattern on a substrate and then singulating the substrate into individual chips. During the singulation process, if the substrate is not stably supported, there is a risk of residual damage to the semiconductor device.

[0003] JP 2016-096265 A

[0004] The problem to be solved by the present invention is to provide a semiconductor device with improved quality.

[0005] The method for manufacturing a semiconductor device according to the embodiment includes a first bonding step, a grinding step, a singulation step, and a support substrate detachment step. The first bonding step is a step of bonding a device surface of a substrate made of a semiconductor material, on which a circuit pattern is formed, to a support substrate. The grinding step is a step of grinding the surface opposite the device surface while the substrate is supported by the support substrate. The singulation step is a step of cutting the substrate while the substrate is supported by the support substrate to detach the substrate. The support substrate detachment step is a step of detaching the support substrate from the substrate.

[0006] A semiconductor device according to an embodiment has a semiconductor chip. The semiconductor chip is made of a semiconductor material. The semiconductor chip is plate-shaped. The semiconductor chip has a device surface, a back surface, and four side surfaces. A circuit pattern is formed on the device surface. The back surface is located opposite the device surface. The four side surfaces connect the device surface and the back surface. Of the four side surfaces, at least one pair of side surfaces facing opposite to each other are inclined in directions approaching each other as they move from the device surface side to the back surface side.

[0007] Schematic diagram showing a semiconductor device of an embodiment. A flowchart showing a manufacturing method of a semiconductor device of an embodiment. Schematic diagram showing a device surface forming step of an embodiment. Schematic diagram showing a mark forming step of an embodiment. Schematic diagram showing a device surface in the mark forming step of an embodiment. Schematic diagram showing a first bonding step of an embodiment. Schematic diagram showing a grinding step of an embodiment. Schematic diagram showing a film forming step of an embodiment. An example of an enlarged view of a film portion near a groove portion of an embodiment. An example of an enlarged view of a film portion near a groove portion of an embodiment. Schematic diagram showing a singulation step of an embodiment. Schematic diagram showing an outer surface etching step of an embodiment. Schematic diagram showing a second bonding step of an embodiment. Schematic diagram showing a support substrate detachment step of an embodiment. Schematic diagram showing a pick-up step of an embodiment.

[0008] Hereinafter, a method for manufacturing a semiconductor device and a semiconductor device according to an embodiment will be described with reference to the drawings.

[0009] In this specification, in order to indicate the positional relationship of parts, etc., the upward direction of the drawing will be described as "up" and the downward direction of the drawing will be described as "down." In this specification, the concepts of "up" and "down" do not necessarily refer to the direction of gravity.

[0010] 1 is a schematic diagram of a semiconductor device 1 according to the present embodiment. The semiconductor device 1 according to the present embodiment is, for example, a MOSFET or an IGBT (Insulated Gate Bipolar Transistor). The semiconductor device 1 according to the present embodiment includes a rectangular plate-shaped semiconductor chip 10T and an electrode 20T provided on one surface of the semiconductor chip 10T.

[0011] The semiconductor chip 10T is made of a semiconductor material, such as, but not limited to, silicon (Si), silicon carbide (SiC), GaAs (gallium arsenide), or GaN (gallium nitride).

[0012] The semiconductor chip 10T has a device surface 10a, a back surface 10b located opposite the device surface 10a, and four side surfaces 10c connecting the device surface 10a and the back surface 10b. The area of ​​each side surface 10c is sufficiently small compared to the areas of the device surface 10a and the back surface 10b. A circuit pattern is formed on the device surface 10a. For example, a MOSFET device or an IGBT device is formed on the device surface 10a. In the following description, the distance between the device surface 10a and the back surface 10b is referred to as the thickness H of the semiconductor chip 10T.

[0013] The electrode 20T is provided on the back surface 10b of the semiconductor chip 10T. The electrode 20T contacts the back surface 10b of the semiconductor chip 10T. For example, if the semiconductor chip 10T is a MOSFET chip, the electrode 20T is a drain electrode of the MOSFET. The electrode 20T includes an electrically conductive material. Here, the electrically conductive material may be, for example, Cu (copper), Al (aluminum), Ni (nickel), Ag (silver), or Au (gold), but is not limited to these.

[0014] In the semiconductor chip 10T of this embodiment, the area of ​​the device surface 10a is larger than the area of ​​the back surface 10b. Furthermore, all of the side surfaces 10c of the semiconductor chip 10T are inclined with respect to the normal to the device surface 10a. All of the side surfaces 10c are inclined in a direction approaching the side surface 10c located opposite the side surface 10c as they move from the device surface 10a side to the back surface 10b side. It is sufficient that at least one pair of the side surfaces 10c facing opposite to each other are inclined in a direction approaching each other as they move from the device surface 10a side to the back surface 10b side.

[0015] 2 is a flowchart showing a method for manufacturing the semiconductor device 1 of this embodiment. The method for manufacturing the semiconductor device 1 of this embodiment includes a device surface forming step S10, a mark forming step S20, a first bonding step S30, a grinding step S40, a film forming step S50, a singulation step S60, an outer surface etching step S70, a second bonding step S80, a support substrate detaching step S90, and a pick-up step S100.

[0016] 3 is a schematic diagram showing the device surface forming step S10 of this embodiment. The device surface forming step S10 is a step of forming a circuit pattern of, for example, a MOSFET device or an IGBT device on one surface of a disk-shaped substrate 10 (semiconductor wafer) made of a semiconductor material, and this surface is called the device surface 10a. In the following description, the surface opposite the device surface 10a before the grinding step S40 described below is referred to as the initial back surface 10f. Although not shown, the device surface forming step S10 and the subsequent mark forming step S20 are performed with the substrate 10 supported on the initial back surface 10f.

[0017] FIG. 4 is a schematic diagram showing the mark forming step S20 of this embodiment. The mark forming step S20 of this embodiment is a step of processing the device surface 10a of the substrate 10 to form grooves 11 (marks) with a depth D on the device surface 10a. The grooves 11 function as marks in the subsequent singulation step S60. The depth D of the grooves 11 is greater than the thickness H (see FIG. 1) of the semiconductor chip 10T manufactured by the manufacturing method of this embodiment. Note that the marks formed in the mark forming step S20 are not limited to a groove shape, as long as they are recesses machined in the depth direction from the device surface 10a. For example, the mark forming step S20 may be a step of forming multiple holes with a depth D instead of the grooves 11.

[0018] In the mark forming step S20 of this embodiment, the grooves 11 are formed by a dicing device M used in the singulation process (see the subsequent singulation step S60). The grooves 11 are formed by a rotating disk-shaped blade 9 provided in the dicing device M. Alternatively, a laser may be used to form the grooves 11.

[0019] FIG. 5 is a schematic diagram showing the device surface 10a after the mark forming step S20. In FIG. 5, the grooves 11 are indicated by thick lines. As shown in FIG. 5, a plurality of alignment lines L11 and L12 are formed in advance on the device surface 10a. The alignment lines L11 and L12 are used as reference positions for forming a circuit pattern in the device surface forming step S10. The alignment lines L11 and L12 include a plurality of first alignment lines L11 and a plurality of second alignment lines L12. The first alignment lines L11 and the second alignment lines L12 extend in directions perpendicular to each other. The alignment lines L11 and L12 divide the device surface 10a into a plurality of vertical and horizontal sections.

[0020] The sections arranged between the alignment lines L11 and L12 are classified into rectangular effective sections S1 used as the semiconductor device 1 and removal sections S2 arranged along the outer edge of the device surface 10a. A circuit pattern for one semiconductor device 1 is formed in each effective section S1. On the other hand, no circuit pattern is formed in the removal section S2. The removal section S2 is arranged to surround the central region where the effective sections S1 are concentrated. The grooves 11 of this embodiment are formed on the alignment lines L11 and L12 that separate adjacent removal sections S2.

[0021] 6 is a schematic diagram showing the first attachment step S30 of this embodiment. In the process of transitioning from the mark formation step S20 to the first attachment step S30, the substrate 10 is turned upside down. The first attachment step S30 is a step of attaching the device surface 10a, which faces downward, to the support substrate 40 using an adhesive 30. By going through the first attachment step S30, the substrate 10 is fixed to the support substrate 40.

[0022] In the first attachment step S30, the device surface 10a is first coated with an uncured adhesive 30. Next, the device surface 10a is placed opposite the support surface of the support substrate 40 and attached to it. The adhesive 30 is then cured. For example, an acrylic adhesive, an epoxy adhesive, or a silicone adhesive can be preferably used as the adhesive 30. The support substrate 40 is a plate-shaped member made of, for example, glass or silicon (Si).

[0023] 6 illustrates a case where the adhesive 30 is completely filled inside the groove 11, but the state of filling with the adhesive 30 is not limited to the state shown in FIG. 6. That is, the adhesive 30 may be filled partway into the groove 11, with a gap being provided near the bottom of the groove 11. Also, the adhesive 30 may not be filled into the groove 11 at all.

[0024] 7 is a schematic diagram showing the grinding step S40 of this embodiment. The grinding step S40 is a step of grinding the initial back surface 10f to form the back surface 10b (ground surface). The grinding step S40 of this embodiment is performed in a state in which the substrate 10 is supported on a support substrate 40. The grinding step S40 reduces the thickness of the substrate 10 to H. As a result, the grooves 11 formed from the device surface 10a side connect to the back surface 10b side, and the grooves 11 penetrate the substrate 10. As described above, the grooves 11 of this embodiment are filled with adhesive 30. Therefore, when the grooves 11 penetrate the substrate 10, the adhesive 30 is exposed from the back surface 10b.

[0025] FIG. 8 is a schematic diagram showing the film forming step S50 of this embodiment. The film forming step S50 is a step of forming a film portion 20 on the rear surface 10b of the substrate 10. The film forming step S50 of this embodiment is performed with the substrate 10 supported on the support substrate 40. The film portion 20 of this embodiment is a metal film made of a metal material. However, the material of the film portion 20 is not limited. The film forming step S50 of this embodiment is performed by, for example, CVD (Chemical Vapor Deposition), PVD (Physical Vapor Deposition), electrolytic plating, electroless plating, or the like. The thickness h of the film portion 20 of this embodiment is, for example, about 1 μm. However, the thickness h of the film portion 20 is not limited to that of this embodiment.

[0026] As described above, the adhesive 30 in the groove 11 is exposed on the back surface 10b. Therefore, a portion of the film portion 20 is formed on the adhesive 30. FIG. 9 is an enlarged view of the film portion 20 near the groove 11. Because the film portion 20 is sufficiently thin, approximately 1 μm, if the material of the surface on which the film is to be formed is different, the film portion 20 in that portion will be in a different state from the other portions. For example, the region 20b of the film portion 20 formed on the adhesive 30 will have observable differences, such as a rougher surface or a smaller or larger film thickness, compared to the region 20a formed on the substrate 10. Therefore, even after the film portion 20 is formed on the back surface 10b, the position of the groove 11 can be determined by observing the film portion 20. Note that FIG. 9 illustrates a case in which the adhesive 30 is completely filled in the groove 11. However, the adhesive 30 in the groove 11 may not fill the groove 11 as shown in FIG. 10, or may fill only a portion of the groove 11 as shown in FIG. 11. In these cases, the recessed shape 20 c is formed on the surface of the film portion 20 , so that the position of the groove portion 11 can be easily grasped by observing the film portion 20 .

[0027] 12 is a schematic diagram showing the singulation step S60 of this embodiment. The singulation step S60 is a step of cutting the substrate 10 and the film portion 20 to singulate the substrate 10 and extracting the semiconductor chips 10T from the substrate 10. The singulation step S60 of this embodiment is performed in a state in which the substrate 10 is supported on the support substrate 40.

[0028] In the singulation step S60 of this embodiment, the substrate 10 and the film portion 20 are cut by a dicing device M using a blade 9. Alternatively, the substrate 10 and the film portion 20 may be cut by a laser dicing device.

[0029] The singulation process S60 of this embodiment is performed from the back surface 10b side of the substrate 10. Therefore, in the singulation process S60, the alignment lines L11 and L12 (see FIG. 5) provided on the device surface 10a are difficult to observe from the processing side. In this embodiment, the grooves 11 provided on the device surface 10a penetrate to the back surface 10b side. Therefore, in the singulation process S60, the positions of the grooves 11 can be grasped from the back surface 10b side via the film portion 20. The dicing device M has an imaging device C that observes the film portion 20 from above. The dicing device M grasps the positions of the grooves 11 by observing the film portion 20 with the imaging device C, and cuts the substrate 10 based on the grooves 11. That is, the singulation process S60 of this embodiment is performed based on the grooves 11 that penetrate to the back surface 10b side.

[0030] 5, all alignment lines L11, L12 in this embodiment are positioned on extensions of the grooves 11. Therefore, the dicing device M cuts the substrate 10 and the film portion 20 linearly along the grooves 11 grasped by the imaging device C, thereby dividing the substrate 10 and the film portion 20 into individual pieces. By cutting the substrate 10 and the film portion 20, a semiconductor device 1 is formed in which electrodes 20T are provided on the back surface 10b side of the semiconductor chip 10T.

[0031] As shown in FIG. 12 , in the singulation step S60, a blade 9 forms dicing grooves 10G in the substrate 10. Even if the blade 9 has a constant thickness, the width of the dicing grooves 10G gradually increases from the bottom toward the opening. This is because the cut surfaces on the opening side of the dicing grooves 10G are polished by the side of the blade 9. Therefore, the cut surfaces of the substrate 10 that face each other across the dicing grooves 10G gradually move apart toward the opening. As a result, the pair of side surfaces 10c of the semiconductor chip 10T formed between the cut surfaces are inclined toward each other from the device surface 10a toward the back surface 10b.

[0032] FIG. 13 is a schematic diagram showing the outer surface etching step S70 of this embodiment. The outer surface etching step S70 is a step of etching at least a portion of the outer surface of the substrate 10. In the outer surface etching step S70 of this embodiment, for example, an etching process is performed on the cut surface of the substrate 10 cut in the singulation step S60. By etching the cut surface, damage to the substrate 10 remaining on the cut surface can be removed, thereby suppressing damage to the substrate 10. The outer surface etching step S70 of this embodiment is performed after the singulation step S60 while the substrate 10 is supported on the support substrate 40. That is, although the substrate 10 has been singulated, it remains supported on the support substrate 40. Therefore, the etching process can be performed without remounting it on a separately prepared support table, simplifying the manufacturing process.

[0033] 14 is a schematic diagram showing the second attaching step S80 of this embodiment. In the process of transitioning from the singulation step S60 to the second attaching step S80, the substrate 10 is turned upside down. The second attaching step S80 is performed in a state where the substrate 10 is supported by the support substrate 40. The second attaching step S80 is a step of attaching the substrate 10 to the dicing tape 50 on the side opposite the support substrate 40. In this embodiment, the film portion 20 is provided on the back surface 10b side of the substrate 10, and therefore the substrate 10 is attached to the dicing tape 50 via the film portion 20.

[0034] 15 is a schematic diagram showing the support substrate detaching step S90 of this embodiment. The support substrate detaching step S90 is a step of detaching the support substrate 40 from the base material 10. In the support substrate detaching step S90 of this embodiment, the adhesive 30 may be dissolved with a solvent, or the adhesive force may be weakened by irradiating the adhesive with a laser through the light-transmitting support substrate 40. Furthermore, the support substrate detaching step S90 may be a step of detaching the support substrate 40 from the base material 10 by mechanical peeling, in which a sharp tool is inserted between the base material 10 and the support substrate 40 and the adhesive 30 is peeled off.

[0035] FIG. 16 is a schematic diagram showing the pick-up step S100 of this embodiment. The pick-up step S100 is a step of individually removing the individual semiconductor devices 1 on the dicing tape 50 from the dicing tape 50. In the pick-up step S100, first, a process is performed to weaken the adhesive strength of the adhesive layer on the surface of the dicing tape 50. The process for weakening the adhesive strength of the adhesive layer of the dicing tape 50 includes, for example, irradiating the adhesive layer with ultraviolet light or heating the adhesive layer. Furthermore, in the pick-up step S100, a pin is used to push one semiconductor device 1 upward from below the dicing tape 50, and negative pressure is applied to the device surface 10a of the semiconductor device 1 to adsorb it, thereby picking up the semiconductor device 1. The semiconductor device 1 can be manufactured through the above steps.

[0036] Next, the effects of this embodiment will be described. In conventional semiconductor device manufacturing methods, the process of cutting and singulating a substrate to form semiconductor devices 1 has been performed while the substrate is mounted on a dicing tape. Because dicing tape 50 is elastic, cutting the substrate on the dicing tape can be problematic in that the substrate is difficult to stabilize during cutting, making the cut surface prone to damage.

[0037] As shown in FIG. 2 , the manufacturing method of the semiconductor device 1 of this embodiment includes a first bonding step S30, a grinding step S40, a singulation step S60, and a support substrate detachment step S90. As shown in FIG. 6 , the first bonding step S30 is a step of bonding the device surface 10 a, on which a circuit pattern of a substrate 10 made of a semiconductor material is formed, to a support substrate 40. As shown in FIG. 7 , the grinding step S40 is a step of grinding the surface opposite the device surface 10 a (initial back surface 10 f) while the substrate 10 is supported by the support substrate 40. The singulation step S60 is a step of cutting the substrate 10 while supported by the support substrate 40 to individualize the substrate 10. The support substrate detachment step S90 is a step of detaching the support substrate 40 from the substrate 10.

[0038] According to the above-described configuration, the substrate 10 is singulated while supported by the support substrate 40. Therefore, compared to when the substrate 10 is singulated on the dicing tape 50, the substrate 10 can be cut while being stably supported. As a result, damage is less likely to remain on the cut surface after the singulation step S60, and it is possible to provide a semiconductor device 1 with improved quality.

[0039] Furthermore, according to the above-described configuration, the singulation step S60 is performed with the device surface 10a attached to the support substrate 40. Generally, in the singulation step S60, particles are likely to be generated during cutting, and these particles may scatter into the processing space and contaminate the device surface 10a. In particular, when the singulation step S60 is performed on a dicing tape 50, there is a risk that a portion of the dicing tape 50 will be scraped off by the blade 9 performing the singulation step S60, adhere to the device surface 10a, and become difficult to remove. According to the above-described configuration, since the device surface 10a is covered by the support substrate 40 via the adhesive 30, particles generated in the singulation step S60 can be prevented from adhering to the device surface 10a, making it possible to provide a semiconductor device 1 with improved quality.

[0040] Furthermore, according to the above-described configuration, after the singulation step S60 is completed, the singulated base material 10 (semiconductor chips 10T) are mounted on the support substrate 40. Therefore, when processing the semiconductor chips 10T after the singulation step S60 (e.g., outer surface etching step S70), it is possible to process multiple semiconductor chips 10T on the support substrate 40 at once. In contrast, when the singulation step S60 is performed on a dicing tape 50 as in the conventional method, etching and other processes cannot be performed on the dicing tape 50 due to concerns about damage to the dicing tape 50. Therefore, in conventional manufacturing methods, the singulated semiconductor chips 10T must be moved from the dicing tape 50 to a support table before processing. According to the above-described configuration, when etching and other processes are performed on the singulated semiconductor chips 10T, the process of remounting the semiconductor chips 10T on the support table can be omitted, simplifying the manufacturing process.

[0041] The manufacturing method of the semiconductor device 1 of this embodiment includes a film forming process S50 after the grinding process S40. In the film forming process S50, a film portion 20 is formed on the surface opposite to the device surface 10a. In the singulation process S60, the film portion 20 is cut together with the substrate 10.

[0042] According to the above-described configuration, the singulation process S60 cuts the film portion 20 and the substrate 10 from the film portion 20 side while the device surface 10a of the substrate 10 is supported. In a typical conventional manufacturing method, singulation is performed on the substrate on which the film portion is formed from the side opposite the film portion, but this method poses a problem of burrs easily occurring when cutting the film portion. In particular, when the film portion is a metal film, burrs tend to form from the cut portion toward the support portion (dicing tape) due to the ductility of the metal. Furthermore, when singulation is performed on the dicing tape, the burrs may penetrate the dicing tape, making it difficult to pick up the semiconductor device formed by singulation. In contrast, according to the above-described configuration, the singulation process S60 cuts the film portion 20 and the substrate 10 in that order from the film portion 20 side, making it difficult to generate burrs from the film portion 20 and eliminating the need to process the burrs. As a result, the semiconductor device 1 can be manufactured stably.

[0043] The manufacturing method of the semiconductor device 1 described above includes an outer surface etching step S70 after the singulation step S60. The outer surface etching step S70 is a step of etching at least a part of the outer surface of the base material 10 while it is supported by the support substrate 40.

[0044] According to the above-described configuration, the outer surface etching step S70 performs an etching process on the cut surfaces of the substrate 10 cut in the singulation step S60, for example, and can remove damage to the substrate 10 remaining on the cut surfaces. Furthermore, the outer surface etching step S70 is performed after the singulation step S60, while the substrate 10 is supported by the support substrate 40. That is, although the substrate 10 has been singulated, it remains supported by the support substrate 40. Therefore, the etching process can be performed without remounting the substrate 10 on a separately prepared support stand, thereby simplifying the manufacturing process.

[0045] The above-described method for manufacturing the semiconductor device 1 includes a second attaching step S80 before the support substrate removing step S90. In the second attaching step S80, the base material 10 is attached to a dicing tape on the side opposite to the support substrate 40 while being supported by the support substrate 40.

[0046] According to the above-described configuration, the support substrate removal step S90 can be stably performed on the dicing tape 50. Furthermore, it becomes possible to pick up the semiconductor device 1 from on the dicing tape 50, and the semiconductor device 1 can be easily picked up.

[0047] As shown in FIG. 1, the semiconductor device 1 of this embodiment includes a plate-shaped semiconductor chip 10T made of a semiconductor material. The semiconductor chip 10T has a device surface 10a, a back surface 10b, and four side surfaces 10c. A circuit pattern is formed on the device surface 10a. The back surface 10b is located on the opposite side of the device surface 10a. The four side surfaces 10c connect the device surface 10a and the back surface 10b. Of the four side surfaces 10c, at least one pair of side surfaces 10c facing opposite to each other are inclined toward each other from the device surface 10a toward the back surface 10b.

[0048] By performing the singulation step S60 using the blade 9 from the back surface 10b side of the base material 10, the side surfaces 10c are inclined toward each other from the device surface 10a side toward the back surface 10b side. In other words, by having such side surfaces 10c, the above-mentioned manufacturing method can be adopted, and a semiconductor device 1 with improved quality can be provided.

[0049] A modified example that can be adopted in this embodiment will be described. In this embodiment, a case has been described in which the film portion 20 is formed on the rear surface 10b of the substrate 10 in the film-forming step S50, and the semiconductor device 1 has an electrode 20T. However, the semiconductor device 1 does not have to have the electrode 20T. In this case, the film-forming step S50 is omitted in the manufacturing method of the semiconductor device 1. Also, in this case, in the singulation step S60, the imaging device C directly images the groove portion 11 exposed on the rear surface 10b.

[0050] Furthermore, in this embodiment, the groove 11 is used as the reference for alignment in the singulation process S60. However, the reference for alignment in the singulation process S60 may be something other than the groove 11, in which case the mark formation process S20 can be omitted. For example, in the singulation process S60, an imaging device C may be disposed below the support substrate 40 to capture an image of the device surface 10a of the base material 10 through the transparent support substrate 40. In this case, the dicing device M inverts the image captured by the imaging device C and aligns the singulation using the alignment lines L11 and L12 in the image as references.

[0051] 5, the grooves 11 are arranged only between the removal sections S2, and not between the effective sections S1. Therefore, in this embodiment, the cut surfaces of the grooves 11 serving as markers do not appear as the side surfaces 10c of the semiconductor device 1, which is the final product. However, the grooves 11 may be arranged on the alignment lines L11 and L12 that define the effective sections S1.

[0052] Additionally, in the manufacturing method of the semiconductor device 1 of this embodiment, the outer surface etching step S70 is performed after the singulation step S60. However, the outer surface etching step may be omitted.

[0053] According to at least one of the embodiments described above, by having a singulation process S60 in which the substrate 10 is cut while supported on the support substrate 40 and the substrate 10 is singulated, it is possible to stably hold the substrate 10 during cutting, thereby suppressing damage to the substrate 10 during cutting and providing a semiconductor device 1 with improved quality.

[0054] The semiconductor device manufacturing method and semiconductor device according to the embodiments include the following supplementary aspects: (Supplementary Note 1) A method for manufacturing a semiconductor device, comprising: a first bonding step of bonding a device surface, on which a circuit pattern of a substrate made of a semiconductor material is formed, to a support substrate; a grinding step of grinding a surface opposite the device surface while the substrate is supported on the support substrate; a singulation step of cutting the substrate while the substrate is supported on the support substrate to individual pieces; and a support substrate detachment step of detaching the support substrate from the substrate. (Supplementary Note 2) The method for manufacturing a semiconductor device according to claim 1, further comprising: a film formation step of forming a film portion on a surface opposite the device surface after the grinding step, wherein the singulation step is a step of cutting the film portion together with the substrate. (Supplementary Note 3) The method for manufacturing a semiconductor device according to claim 1 or 2, further comprising: an outer surface etching step of etching at least a portion of an outer surface of the substrate while the substrate is supported on the support substrate after the singulation step. (Supplementary Note 4) The method for manufacturing a semiconductor device according to any one of claims 1 to 3, further comprising a second attaching step of attaching the base material to a dicing tape on a side opposite to the support substrate while the base material is supported by the support substrate before the support substrate removing step. (Supplementary Note 5) A semiconductor device comprising: a plate-shaped semiconductor chip made of a semiconductor material, the semiconductor chip having: a device surface on which a circuit pattern is formed, a back surface located opposite the device surface, and four side surfaces connecting the device surface and the back surface, and at least one pair of side surfaces facing opposite to each other of the four side surfaces are inclined in directions approaching each other as they move from the device surface side to the back surface side.

[0055] Although several embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These embodiments can be implemented in various other forms, and various omissions, substitutions, and modifications can be made without departing from the spirit of the invention. These embodiments and their modifications are included within the scope and spirit of the invention, as well as within the scope of the invention described in the claims and their equivalents.

[0056] 1...semiconductor device, 10...substrate, 10a...device surface, 10b...rear surface, 10c...side surface, 10T...semiconductor chip, 20...film portion, 40...support substrate, 50...dicing tape, S30...first bonding step, S40...grinding step, S50...film formation step, S60...singulation step, S70...outer surface etching step, S80...second bonding step, S90...support substrate removal step

Claims

1. A method for manufacturing a semiconductor device, comprising: a first attachment step of attaching a device surface, on which a circuit pattern of a substrate made of a semiconductor material is formed, to a support substrate; a grinding step of grinding a surface opposite the device surface while the substrate is supported by the support substrate; a singulation step of cutting the substrate while the substrate is supported by the support substrate to individualize the substrate; and a support substrate detachment step of detaching the support substrate from the substrate.

2. The method for manufacturing a semiconductor device according to claim 1, further comprising, after the grinding step, a film forming step of forming a film portion on a surface opposite to the device surface, and the singulation step is a step of cutting the film portion together with the substrate.

3. The method for manufacturing a semiconductor device according to claim 1, further comprising, after the singulation step, an outer surface etching step of etching at least a part of an outer surface of the base material while it is supported by the support substrate.

4. The method for manufacturing a semiconductor device according to claim 1, further comprising a second attachment step of attaching the base material to a dicing tape on the side opposite the support substrate while the base material is supported by the support substrate, prior to the support substrate removal step.

5. A semiconductor device comprising a plate-shaped semiconductor chip made of a semiconductor material, the semiconductor chip having a device surface on which a circuit pattern is formed, a back surface opposite the device surface, and four side surfaces connecting the device surface and the back surface, wherein at least one pair of side surfaces facing opposite each other are inclined in directions approaching each other as they move from the device surface side to the back surface side.

Images