Perovskite solar cell

Abstract

One embodiment of the present invention provides a perovskite solar cell comprising: a lower electrode; a hole transport layer formed on the lower electrode; a perovskite layer formed on the hole transport layer; a passivation layer formed on the perovskite layer; an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer includes a halide organic material.

Description

perovskite solar cells

[0001] The present invention relates to a perovskite solar cell.

[0002] Perovskite solar cells are solar cell devices that use a material with a perovskite structure as a light absorber. They have most of the characteristics required for existing next-generation solar cells, such as high photoelectric conversion efficiency, low manufacturing cost, and the ability to be processed at low temperature and in a low-cost solution process, and are thus attracting attention as next-generation solar cells that will replace silicon solar cells.

[0003] In the process of forming a thin film in a perovskite solar cell, various defects are formed on the surface exposed to the outside. In the ABX3 structure, organic substances corresponding to A and halides corresponding to X can escape from the ABX3 structure due to factors such as light, heat, pressure, electric field, and magnetic field, thereby forming defects such as vacancies and interstitials. In addition, in the existing method, the conduction band energy level of the perovskite light-absorbing layer may be lower than the conduction band energy level of the electron transport layer. In this case, there is a problem that an additional energy level adjustment layer must be inserted between the two layers to match the conduction band energy levels of the two layers.

[0004] The present invention can provide a perovskite solar cell including a passivation layer containing a halide organic material.

[0005] In one aspect, the present invention provides a perovskite solar cell comprising a lower electrode, a hole transport layer formed on the lower electrode, a perovskite layer formed on the hole transport layer, a passivation layer formed on the perovskite layer, an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer comprises a compound of the following chemical formula 1:

[0006] [Chemical Formula 1]

[0007]

[0008] In the above chemical formula 1, R 1 is hydrogen or C 1-10 Alkyl, R 2 is F, Cl, Br, or I, and L is hydrogen or C 1-10 It is alkylene.

[0009] One embodiment of the present invention is the R 1 This hydrogen or C 1-5 Alkyl, the above R 2 Br, and L is hydrogen or C 1-5 It may be alkylene.

[0010] In one embodiment of the present invention, the concentration of the compound of formula 1 in the passivation layer may be 0.1 to 1 mM.

[0011] In one embodiment of the present invention, the lower electrode and the upper electrode may each be a transparent electrode or a metal electrode.

[0012] In one embodiment of the present invention, the transparent electrode may include ITO, IZO, AZO, or FTO, and the metal electrode may include Ag, Au, Al, Cu, SnPb, SnAgBi, or SnAgCu.

[0013] In one embodiment of the present invention, the hole transport layer may include a material selected from the group consisting of Spiro-OMeTAD, PEDOT:PSS, G-PEDOT, PANI:PSS, PANI:CSA, PDBT, P3HT, PCPDTBT, PCDTBT, PTAA, 2PACz, Me-4PACz, MoO3, V2O5, NiO, WO3, CuI, CuSCN, and combinations thereof.

[0014] In one embodiment of the present invention, the perovskite layer may include a perovskite material of the following chemical formula 2:

[0015] [Chemical Formula 2]

[0016] ABX3

[0017] In the above chemical formula 2, A is an alkali metal, or C 1-25 A substituted or unsubstituted alkyl group, wherein when A is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group or a methoxy group, B comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof, and X comprises a halide anion or a chalcogenide anion.

[0018] In one embodiment of the present invention, the electron transport layer may include a material selected from the group consisting of BaSnO3, TiO2, ZrO, Al2O3, SnO2, ZnO, WO3, NbOH, Nb2O5, TiSrO3, and combinations thereof.

[0019] One embodiment of the present invention may further include a lower solar cell below the lower electrode.

[0020] In one embodiment of the present invention, the lower solar cell may be a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a GaAs solar cell, a CdTe solar cell, a CIGS solar cell, a CZTS solar cell, an organic solar cell, a fuel-sensitized solar cell, or a group III-V compound solar cell.

[0021] One embodiment of the present invention may further include a buffer layer between the hole transport layer and the perovskite layer, and between the electron transport layer and the passivation layer.

[0022] In one embodiment of the present invention, the buffer layer may include one or more of LiF, PEAI, PEABr, 4F-PEAI, Octylammonium iodide, oleylamime, 2PACz, 4PACz, Me-4PACz, and MeO-2PACz.

[0023] In one embodiment of the present invention, the work function of the perovskite layer may be 5 eV or less.

[0024] In one embodiment of the present invention, the open circuit voltage of the perovskite solar cell may be 1.000 V or more.

[0025] In another aspect, the present invention provides a method for manufacturing a perovskite solar cell, comprising the steps of preparing a lower electrode, forming a hole transport layer on the lower electrode, forming a perovskite layer on the hole transport layer, forming a passivation layer on the perovskite layer, forming an electron transport layer on the passivation layer, and forming an upper electrode on the electron transport layer, wherein the passivation layer includes a compound of the above chemical formula 1.

[0026] The perovskite solar cell according to the present invention introduces a halide organic layer to control surface defects of the perovskite solar cell and suppress electron-hole recombination caused by the defects. This improves the open-circuit voltage and stability of the perovskite solar cell. Furthermore, by lowering the work function of the perovskite to exhibit n-type characteristics, the difference in conduction band energy levels between the electron transport layer and the perovskite layer can be reduced, thereby improving the open-circuit voltage.

[0027] FIG. 1 is a cross-sectional view schematically showing a perovskite solar cell according to one embodiment of the present invention.

[0028] FIG. 2 is a cross-sectional view schematically showing a perovskite solar cell according to another embodiment of the present invention.

[0029] Figure 3 is a flowchart showing a method for manufacturing a perovskite solar cell according to one embodiment of the present invention.

[0030] FIG. 4 shows the results of X-ray photoelectron spectroscopy (XPS) analysis of a perovskite layer and a passivation layer according to one embodiment of the present invention.

[0031] <Explanation of symbols>

[0032] 1, 1`: Perovskite solar cell 10: Top electrode

[0033] 20: Electron transport layer 30: Passivation layer

[0034] 40: Perovskite layer 50: Hole transport layer

[0035] 60: Lower electrode 70: Lower solar cell

[0036] One embodiment of the present invention provides a perovskite solar cell comprising a lower electrode, a hole transport layer formed on the lower electrode, a perovskite layer formed on the hole transport layer, a passivation layer formed on the perovskite layer, an electron transport layer formed on the passivation layer; and an upper electrode formed on the electron transport layer, wherein the passivation layer comprises a compound of the following chemical formula 1:

[0037] [Chemical Formula 1]

[0038]

[0039] In the above chemical formula 1, R 1 is hydrogen or C 1-10 Alkyl, R 2 is F, Cl, Br, or I, and L is hydrogen or C 1-10 It is alkylene.

[0040] Another embodiment of the present invention provides a method for manufacturing a perovskite solar cell, comprising the steps of preparing a lower electrode, forming a hole transport layer on the lower electrode, forming a perovskite layer on the hole transport layer, forming a passivation layer on the perovskite layer, forming an electron transport layer on the passivation layer, and forming an upper electrode on the electron transport layer, wherein the passivation layer includes a compound of the above chemical formula 1.

[0041] One embodiment of the present invention is illustrated in the accompanying drawings. However, the present invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art. Like reference numerals in the drawings indicate like elements.

[0042] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the invention. As used herein, the singular forms "a," "an," and "the" are intended to include the plural forms including "at least one," unless the content clearly dictates otherwise. "At least one" should not be construed as limiting to the singular. As used herein, the term "and / or" includes any and all combinations of one or more of the listed items. The terms "comprises" and / or "comprising" as used in the detailed description specify the presence of stated features, regions, integers, steps, operations, components, and / or ingredients, but do not preclude the presence or addition of one or more other features, regions, integers, steps, operations, components, ingredients, and / or groups thereof.

[0043] In this specification, reference to "on" or "on" another object includes not only directly on top of the other object, but also cases where an object is interposed between the other object.

[0044] Throughout the specification, when a part is said to be "connected (connected, contacted, coupled)" to another part, this includes not only cases where it is "directly connected" but also cases where it is "indirectly connected" with another part in between.

[0045] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure pertains. Furthermore, it will be understood that terms defined in commonly used dictionaries should be interpreted to have a meaning consistent with their meaning within the context of the relevant art and the present disclosure, and not in an idealized or overly formal sense.

[0046] While specific embodiments have been described, alternatives, modifications, variations, improvements, and substantial equivalents that are not currently anticipated or unforeseen may occur to the applicant or those skilled in the art. Accordingly, the appended claims, as filed and as amended, are intended to encompass all such alternatives, modifications, variations, improvements, and substantial equivalents.

[0047] In the present invention, the terms "alkyl" and "alkylene" may be straight-chain or branched-chain, unless otherwise specified, and may have a carbon number of 1 to 25, but is not particularly limited thereto. In one embodiment, the alkyl group has 1 to 10 carbon atoms. In another embodiment, the alkyl group has 1 to 5 carbon atoms. Specific examples of alkyl groups include methyl, ethyl, propyl, n-propyl, isopropyl, butyl, n-butyl, isobutyl, tert-butyl, sec-butyl, 1-methyl-butyl, 1-ethyl-butyl, pentyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, hexyl, n-hexyl, 1-methylpentyl, 2-methylpentyl, 4-methyl-2-pentyl, 3,3-dimethylbutyl, 2-ethylbutyl, heptyl, n-heptyl, 1-methylhexyl, octyl, n-octyl, tert-octyl, 1-methylheptyl, 2-ethylhexyl, 2-propylpentyl, n-nonyl, 2,2-dimethylheptyl, 1-ethyl-propyl, 1,1-dimethyl-propyl, isohexyl, 2-methylpentyl, 4-methylhexyl, 5-methylhexyl, etc., but are not limited to these.

[0048] In the examples below, the terms first, second, etc. are not used in a limiting sense, but are used for the purpose of distinguishing one component from another.

[0049] In the examples below, singular expressions include plural expressions unless the context clearly indicates otherwise.

[0050] For convenience of explanation, the sizes of components in the drawings may be exaggerated or reduced. For example, the sizes and thicknesses of each component shown in the drawings are arbitrarily indicated for convenience of explanation, and thus the present invention is not necessarily limited to what is shown.

[0051] In the following examples, the x-axis, y-axis, and z-axis are not limited to three axes on an orthogonal coordinate system, and can be interpreted in a broad sense that includes them. For example, the x-axis, y-axis, and z-axis may be orthogonal to each other, but may also refer to different directions that are not orthogonal to each other.

[0052] In some embodiments, where implementations are otherwise feasible, specific process sequences may be performed in a different order than described. For example, two processes described in succession may be performed substantially simultaneously, or in a reverse order from the described order.

[0053]

[0054] A perovskite solar cell according to one embodiment of the present invention may include a lower electrode, a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, and an upper electrode.

[0055] FIG. 1 is a cross-sectional view schematically showing a perovskite solar cell according to one embodiment of the present invention.

[0056] According to FIG. 1, a perovskite solar cell (1) may include a lower electrode (60), a hole transport layer (50), a perovskite layer (40), a passivation layer (30), an electron transport layer (20), and an upper electrode (10).

[0057] The above passivation layer (30) may include a compound of the following chemical formula 1.

[0058] [Chemical Formula 1]

[0059]

[0060] In the above chemical formula 1,

[0061] R 1 is hydrogen or C 1-10 alkyl,

[0062] R 2 is F, Cl, Br, or I, and

[0063] L is hydrogen or C 1-10 It may be alkylene.

[0064] More specifically, the above R 1 is hydrogen or C 1-5 alkyl,

[0065] The above R 2 is Br, and

[0066] The above L is hydrogen or C 1-5 It may be alkylene,

[0067] The compound of the above chemical formula 1 may be, but is not limited to, 1,3,5-Tris(bromomethyl)-2,4,6-triethylbenzene.

[0068] The concentration of the compound of formula 1 in the passivation layer (30) may be 0.1 to 1 mM; 0.1 to 0.8 mM; 0.1 to 0.6 mM; 0.1 to 0.4 mM; 0.2 to 1 mM; 0.2 to 0.8 mM; 0.2 to 0.6 mM; or 0.2 to 0.4 mM.

[0069] By including the compound of chemical formula 1 in the passivation layer (30), surface defects of the perovskite solar cell can be controlled to improve the electrical performance of the device, and the energy level of the surface of the perovskite solar cell can be controlled to improve the open circuit voltage. In addition, the stability of the perovskite solar cell can also be improved.

[0070] The upper electrode (10) and the lower electrode (60) may each be a transparent electrode or a metal electrode. Preferably, at least one of the upper electrode (10) and the lower electrode (60) may be a transparent electrode.

[0071] A transparent electrode may be used to facilitate charge collection in a horizontal direction. The upper electrode (10) may be a transparent electrode, but a metal electrode may be patterned and laminated on top of the transparent electrode. The lower electrode (60) is preferably a transparent electrode when connected to the lower solar cell.

[0072] The transparent electrode may include ITO, IZO, AZO, or FTO, and the metal electrode may include, but is not limited to, Ag, Au, Al, Cu, SnPb, SnAgBi, or SnAgCu.

[0073] The above perovskite layer (40) may include a perovskite material of the following chemical formula 2.

[0074] [Chemical Formula 2]

[0075] ABX3

[0076] In the above chemical formula 2,

[0077] The above A is an alkali metal, or C 1-25 As a substituted or unsubstituted alkyl group,

[0078] When the above A is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group or a methoxy group;

[0079] wherein B comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof; and

[0080] The above X may include a halide anion or a chalcogenide anion.

[0081] More specifically, the A may include Formamidinium, Methylammonium, Cesium, Rubidium, Potassium, Sodium, Lithium Guanidine, Butylammonium, Ethylammonium, or Phenethylammonium, and the B may include Lead, Tin, Germanium, Cadmium, Znic, Magnesium, etc. The X substance may include Iodide, Bromide, Chloride, Fluoride, Thiocyanate, Cyanate, Selenocyanate, Formate, Acetate, etc.

[0082] The above hole transport layer (50) is a layer that transports holes formed in the perovskite layer (40) to the lower electrode (60) while simultaneously blocking the movement of electrons, and may include a material selected from the group consisting of Spiro-OMeTAD, PEDOT:PSS, G-PEDOT, PANI:PSS, PANI:CSA, PDBT, P3HT, PCPDTBT, PCDTBT, PTAA, 2PACz, Me-4PACz, MoO3, V2O5, NiO, WO3, CuI, CuSCN, and combinations thereof.

[0083] The electron transport layer (20) is a layer that transports electrons formed in the perovskite layer (40) to the upper electrode (10) while simultaneously blocking the movement of holes, and may include a material selected from the group consisting of BaSnO3, TiO2, ZrO, Al2O3, SnO2, ZnO, WO3, NbOH, Nb2O5, TiSrO3, and combinations thereof.

[0084] Meanwhile, a buffer layer may be further included between the hole transport layer (50) and the perovskite layer (40), and between the electron transport layer (20) and the passivation layer (30).

[0085] The above buffer layer is for preventing interface defects and improving transport capacity, and may include one or more of LiF, PEAI, PEABr, 4F-PEAI, Octylammonium iodide, oleylamime, 2PACz, 4PACz, Me-4PACz, and MeO-2PACz.

[0086] A perovskite solar cell according to another embodiment of the present invention may further include a lower solar cell.

[0087] FIG. 2 is a cross-sectional view schematically illustrating a perovskite solar cell further including a lower solar cell according to one embodiment of the present invention.

[0088] According to FIG. 2, the perovskite solar cell (1`) may further include a lower solar cell (70) below the lower electrode (60).

[0089] The above lower solar cell (70) may be, but is not limited to, a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a GaAs solar cell, a CdTe solar cell, a CIGS solar cell, a CZTS solar cell, an organic solar cell, a fuel-sensitized solar cell, or a group III-V compound solar cell.

[0090] When a lower solar cell (70) is included under the lower electrode (60), the lower electrode (60) can serve as a recombination layer that induces recombination of electrons and holes generated in the lower solar cell (70) and the upper perovskite solar cell. Therefore, in this case, it is preferable that the lower electrode (60) be a transparent electrode.

[0091] The above hole transport layer (50), perovskite layer (40), passivation layer (30), electron transport layer (20), and upper electrode (10) are the same as those in the above-described embodiment or can be applied with modifications as needed, and a more detailed description is omitted.

[0092] Figure 3 is a flowchart showing a method for manufacturing a perovskite solar cell according to one embodiment of the present invention.

[0093] The present invention provides a method for manufacturing a perovskite solar cell, including a step of preparing a lower electrode (S100), a step of forming a hole transport layer (S200), a step of forming a perovskite layer (S300), a step of forming a passivation layer (S400), a step of forming an electron transport layer (S500), and a step of forming an upper electrode (S600).

[0094] Another embodiment of the present invention may further include a step of forming a buffer layer between the step of forming the hole transport layer (S200) and the step of forming the perovskite layer (S300), and between the step of forming the passivation layer (S400) and the step of forming the electron transport layer (S500).

[0095] The lower electrode, hole transport layer, perovskite layer, passivation layer, electron transport layer, upper electrode, and buffer layer may be applied in the same manner as in the above-described embodiment or modified as needed, and a more detailed description thereof will be omitted.

[0096]

[0097] Hereinafter, the present invention will be described in detail through experimental examples.

[0098] However, the experimental examples described below are only specific examples of one aspect of the present invention, and the present invention is not limited thereto.

[0099]

[0100] <Experimental Example 1> Ultraviolet Photoelectron Spectroscopy (UPS)

[0101] According to the present invention, ultraviolet electron spectroscopy was performed on a perovskite layer including a passivation layer (Example) and a perovskite layer not including a passivation layer (Control). The experimental results are shown in Table 1 below.

[0102] Work function (eV) Valence band maximum (eV) Ionization energy (eV) Control (perovskite layer) 5.35 0.67 6.02 Example 1 (TBTB 0.3 mM) 4.87 0.99 5.86 Example 2 (TBTB 0.5 mM) 4.71 1.13 5.84 Example 3 (TBTB 0.7 mM) 4.84 0.96 5.80

[0103] Looking at Table 1 above, it can be seen that the work function of the perovskite layer including the passivation layer is reduced compared to the control group, and the energy level is controlled to a form closer to the N-type.

[0104]

[0105] <Experimental Example 2> X-ray photoelectron spectroscopy (XPS)

[0106] X-ray photoelectron spectroscopy was performed on the control group of Experimental Example 1 and Examples 1 to 3, and the experimental results are as shown in Fig. 4.

[0107] As shown in Fig. 4, in the case of Examples 1 to 3 including a passivation layer, Pb is compared to the control group. 0 It can be seen that the corresponding pick decreases. It is expected that the conduction band of the adjacent electron transport layer will be relatively reduced due to the low work function of the passivation layer, which will facilitate the extraction of electrons generated in the light absorption layer.

[0108]

[0109] <Experimental Example 3> Evaluation of open circuit voltage and efficiency of solar cells

[0110] The open circuit voltage, short circuit current, fill factor, and efficiency of the perovskite solar cells including the control group of Experimental Example 1 and Examples 1 to 3 were evaluated. A total of five evaluations were performed, and the experimental results are shown in Table 2 below.

[0111] Open circuit voltage (V) Short circuit current (mA / cm) 2)Filling ratio (%)Efficiency (%)Control (Perovskite layer)Best0.98119.3174.6614.14Average1.00718.6472.8813.68Example 1 (TBTB 0.3 mM)Best1.05318.9971.7414.35Average1.05018.6870.1113.76Example 2 (TBTB 0.5 mM)Best1.06118.5167.9613.34Average1.05318.2967.2212.95Example 3 (TBTB 0.7mM)Best1.05318.2366.7112.80Average1.05318.1365.4112.49

[0112] As shown in Table 2 above, it can be seen that the open circuit voltage of all solar cells including the examples increased compared to the control group. In particular, the solar cell including Example 1 showed an increase in maximum efficiency and average efficiency due to the increase in open circuit voltage.

[0113] The foregoing description of the present invention is for illustrative purposes only, and those skilled in the art will readily appreciate that the present invention can be readily modified into other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. For example, each component described as a single entity may be implemented in a distributed manner, and similarly, components described as distributed may be implemented in a combined manner.

[0114] The scope of the present invention is indicated by the claims described below, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

Claims

1. Lower electrode; A hole transport layer formed on the lower electrode; A perovskite layer formed on the hole transport layer; A passivation layer formed on the perovskite layer; an electron transport layer formed on the passivation layer; and As comprising an upper electrode formed on the electron transport layer, The passivation layer comprises a compound of the following chemical formula 1, a perovskite solar cell: [Chemical Formula 1] In the above chemical formula 1, R 1 is hydrogen or C 1-10 alkyl; R 2 is F, Cl, Br, or I; and L is hydrogen or C 1-10 It is alkylene.

2. In paragraph 1, The above R 1 is hydrogen or C 1-5 alkyl; The above R 2 is Br; and The above L is hydrogen or C 1-5 Alkylene, perovskite solar cells.

3. In paragraph 1, A perovskite solar cell, wherein the concentration of the compound of formula 1 in the passivation layer is 0.1 to 1 mM.

4. In paragraph 1, A perovskite solar cell, wherein the lower electrode and the upper electrode are each a transparent electrode or a metal electrode.

5. In paragraph 4, The above transparent electrode comprises ITO, IZO, AZO, or FTO, A perovskite solar cell, wherein the metal electrode comprises Ag, Au, Al, Cu, SnPb, SnAgBi, or SnAgCu.

6. In paragraph 1, A perovskite solar cell, wherein the hole transport layer comprises a material selected from the group consisting of Spiro-OMeTAD, PEDOT:PSS, G-PEDOT, PANI:PSS, PANI:CSA, PDBT, P3HT, PCPDTBT, PCDTBT, PTAA, 2PACz, Me-4PACz, MoO3, V2O5, NiO, WO3, CuI, CuSCN, and combinations thereof.

7. In paragraph 1, A perovskite solar cell, wherein the perovskite layer comprises a perovskite material of the following chemical formula 2: [Chemical Formula 2] ABX3 In the above chemical formula 2, The above A is an alkali metal, or C 1-25 As a substituted or unsubstituted alkyl group, When the above A is substituted, the substituent is an amino group, a hydroxyl group, a cyano group, a halogen group, a nitro group or a methoxy group; wherein B comprises a metal cation selected from the group consisting of Pb, Sn, Ge, Cu, Ni, Co, Fe, Mn, Cr, Pd, Cd, Yb, and combinations thereof; and The above X comprises a halide anion or a chalcogenide anion.

8. In paragraph 1, A perovskite solar cell, wherein the electron transport layer comprises a material selected from the group consisting of BaSnO3, TiO2, ZrO, Al2O3, SnO2, ZnO, WO3, NbOH, Nb2O5, TiSrO3, and combinations thereof.

9. In paragraph 1, A perovskite solar cell further comprising a lower solar cell below the lower electrode.

10. In paragraph 9, The above lower solar cell is a perovskite solar cell, which is a polycrystalline silicon solar cell, a crystalline silicon solar cell, a perovskite solar cell, a GaAs solar cell, a CdTe solar cell, a CIGS solar cell, a CZTS solar cell, an organic solar cell, a fuel-sensitized solar cell, or a group III-V compound solar cell.

11. In paragraph 1 or paragraph 9, Between the hole transport layer and the perovskite layer; and A perovskite solar cell further comprising a buffer layer between at least one of the electron transport layer and the passivation layer.

12. In paragraph 11, A perovskite solar cell, wherein the buffer layer comprises at least one of LiF, PEAI, PEABr, 4F-PEAI, Octylammonium iodide, oleylamime, 2PACz, 4PACz, Me-4PACz, and MeO-2PACz.

13. In paragraph 1, A perovskite solar cell, wherein the work function of the perovskite layer is 5 eV or less.

14. In paragraph 1, A perovskite solar cell having an open circuit voltage of 1.000 V or more.

15. Step for preparing the lower electrode; A step of forming a hole transport layer on the lower electrode; A step of forming a perovskite layer on the hole transport layer; A step of forming a passivation layer on the perovskite layer; A step of forming an electron transport layer on the passivation layer; and A step of forming an upper electrode on the electron transport layer, A method for manufacturing a perovskite solar cell, wherein the passivation layer comprises the compound of claim 1.

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