Apparatus and system for using RPD and PVD to prepare heterojunction solar cell

Abstract

The present application belongs to the field of solar cells. Disclosed are an apparatus and system for using RPD and PVD to prepare a heterojunction solar cell. The apparatus for using RPD and PVD to prepare a heterojunction solar cell comprises an input chamber group for environmental transition, a first-side coating chamber for performing coating on a first side of a cell piece, a second-side coating chamber group for performing on coating a second side of the cell piece, an output chamber group for environmental transition, and a main control unit, wherein the first-side coating chamber comprises a first PVD magnetron sputtering chamber; the second-side coating chamber group comprises an RPD coating chamber and a second PVD magnetron sputtering chamber, which are sequentially arranged; and an RPD+PVD composite TCO film is prepared on the second side of the cell piece, which composite TCO film is a laminated composite film formed by depositing a PVD film on the side of an RPD film that is away from a silicon wafer. The present application can reduce the preparation costs while ensuring the preparation efficiency and the energy conversion rate of SHJ cells, thereby overcoming the problem of limited production capacity of RPD devices.

Description

Device and system for preparing heterojunction solar cells using RPD and PVD Technical Field

[0001] The present application belongs to the field of solar energy technology and relates to the preparation of solar cells, and specifically to a device and system for preparing heterojunction solar cells using RPD and PVD. Background Art

[0002] Currently, PVD (Physical Vapor Deposition) equipment is commonly used to fabricate heterojunction solar cells. However, the conversion efficiency of solar cells produced using PVD equipment is not very ideal. Reactive plasma deposition (RPD) equipment offers significant advantages in fabricating high-efficiency heterojunction solar cells, improving the conversion efficiency of solar cells produced using it by 0.1-0.3% compared to PVD. However, RPD equipment has its own limitations, namely its limited production capacity. Using RPD equipment for all coatings would not meet the demand for large production capacity. Furthermore, increasing production capacity by adding RPD equipment would result in high equipment costs.

[0003] To address these issues, existing technologies combine two deposition processes. Typically, RPD deposition is used to prepare the front-side TCO film for SHJ cells, while PVD is used to prepare the back-side TCO film. This approach improves the energy conversion efficiency of SHJ cells while controlling costs. However, this approach only addresses these issues to a certain extent, not completely. This is because this combination of RPD equipment still requires a large amount of equipment, and due to its limited production capacity, the aforementioned technical issues persist to a certain extent. Utility Model Content

[0004] The present application aims to solve at least one of the technical problems in the above-mentioned related technologies to a certain extent.

[0005] To this end, the purpose of this application is to provide a device for preparing heterojunction solar cells using RPD and PVD, which can minimize the equipment investment cost while ensuring the conversion efficiency of the prepared cells, and can break through the problem of limited production capacity of RPD equipment.

[0006] In order to solve the above technical problems, this application is implemented as follows:

[0007] The present application provides an apparatus for fabricating heterojunction solar cells using RPD and PVD, the apparatus comprising: an inlet chamber group for achieving a transition from an external environment to a film-forming process environment; a first-side coating chamber group for fabricating a TCO thin film on a first side of a cell; a second-side coating chamber group for fabricating a TCO thin film on a second side of a cell; an outlet chamber group for achieving a transition from a film-forming process environment to an external environment; and a main control unit connected to each chamber group for controlling the normal operation of each chamber group.

[0008] The first-side coating chamber includes a first PVD magnetron sputtering chamber;

[0009] The second-side coating chamber group includes an RPD coating chamber and a second PVD magnetron sputtering chamber arranged in sequence, which are used to prepare an RPD+PVD composite TCO film on the second side of the battery cell; the composite TCO film is a stacked composite film in which a PVD film is deposited on the side of the RPD film away from the battery cell silicon wafer.

[0010] In addition, the device for preparing heterojunction solar cells using RPD and PVD according to the present application may also have the following additional technical features:

[0011] In some embodiments, the first PVD magnetron sputtering chamber is provided with 1-10 pairs of rotating cathodes or planar cathodes, and any cathode is used for downward coating;

[0012] The RPD coating chamber is equipped with 1-8 plasma generating devices, which are arranged in any combination; each plasma generating device is correspondingly provided with a crucible for mounting a target material, and a target material supply structure for automatically supplying the target material is provided below the crucible; the plasma generating device coats upwards;

[0013] The second PVD magnetron sputtering chamber is provided with 1-10 pairs of rotating cathodes or planar cathodes in the chamber, and any cathode is used for coating upward.

[0014] In some embodiments, the inlet chamber group includes an inlet lock chamber, an inlet buffer chamber and an inlet transition chamber arranged in sequence; the outlet chamber group includes an outlet transition chamber, an outlet buffer chamber and an outlet lock chamber; a gate valve structure is provided at the inlet end of the inlet lock chamber, between the inlet lock chamber and the inlet buffer chamber, between the inlet buffer chamber and the inlet transition chamber, between the outlet transition chamber and the outlet buffer chamber, between the outlet buffer chamber and the outlet lock chamber, and at the outlet end of the outlet lock chamber; the gate valve structure is connected to the main control unit.

[0015] In some embodiments, a first transmission mode changing structure is provided in the chamber of the inlet transition chamber to change the transmission mode of the carrier plate from an intermittent mode to a continuous mode;

[0016] A second transmission mode changing structure is provided in the cavity of the outlet transition chamber to change the transmission mode of the carrier plate from a continuous mode to an intermittent mode.

[0017] In some embodiments, the chambers of the inlet lock chamber, the inlet buffer chamber, the outlet buffer chamber, and the outlet lock chamber are respectively equipped with a first vacuum pump group, and the chambers are respectively equipped with a first vacuum gauge group; the first vacuum pump group is connected to the corresponding chamber; the first vacuum pump group and the first vacuum gauge group are both connected to the main control unit, and the main control unit controls the operation of the first vacuum pump group to vacuum the chamber according to the measurement results of the first vacuum gauge group;

[0018] The vacuum degrees in the chambers of the inlet lock chamber, the inlet buffer chamber and the inlet transition chamber are successively increased; the vacuum degrees in the chambers of the outlet transition chamber, the outlet buffer chamber and the outlet lock chamber are successively decreased.

[0019] In some embodiments, a heater for heating the carrier plate and the battery cell and a first thermometer for measuring the real-time temperature are provided in the chamber of the input buffer chamber. Both the heater and the first thermometer are connected to the main control unit, and the main control unit controls the operation of the heater according to the measurement results of the first thermometer.

[0020] In some embodiments, a first gas buffer structure is further provided in the chamber of the inlet buffer chamber, and the first gas buffer structure is provided near the gate valve of the inlet transition chamber;

[0021] The first gas buffer structure is connected to an external compensation gas circuit system and is used to inject gas to reduce the pressure fluctuation of the subsequent process chamber when the gate valve is opened;

[0022] A first gas mass flow meter is provided in the first gas buffer structure for measuring the amount of injected gas;

[0023] The first gas buffer structure and the first gas mass flow meter are both connected to the main control unit, and the main control unit controls the operation of the gas buffer structure according to the amount of gas injected.

[0024] In some embodiments, a cooler for cooling the carrier plate and the battery cells and a second thermometer for measuring real-time temperature are provided in the cavity of the output buffer chamber. Both the cooler and the second thermometer are connected to the main control unit, and the main control unit controls the operation of the cooler according to the measurement results of the second thermometer.

[0025] In some embodiments, a second gas buffer structure is further provided in the chamber of the outlet buffer chamber, and the second gas buffer structure is provided near the gate valve of the outlet transition chamber;

[0026] The second gas buffer structure is connected to an external compensation gas circuit system and is used to inject gas to reduce the pressure fluctuation of the subsequent process chamber when the gate valve is opened;

[0027] A second gas mass flow meter is provided in the second gas buffer structure for measuring the amount of injected gas;

[0028] The second gas buffer structure and the second gas mass flow meter are both connected to the main control unit, and the main control unit controls the operation of the second gas buffer structure according to the amount of gas injected.

[0029] In some embodiments, the inlet transition chamber and the first PVD magnetron sputtering chamber, the second PVD magnetron sputtering chamber and the outlet transition chamber are respectively provided with one or two second vacuum pump groups, and the chambers are respectively provided with second vacuum gauge groups; the second vacuum pump groups are connected to the corresponding chambers; the second vacuum pump groups and the second vacuum gauge groups are both connected to the main control unit, and the main control unit controls the operation of the second vacuum pump group according to the measurement results of the second vacuum gauge group to achieve vacuuming of the chamber.

[0030] In some embodiments, a gas isolation chamber is provided between the first PVD magnetron sputtering chamber and the RPD coating chamber, and between the RPD coating chamber and the second PVD magnetron sputtering chamber, to isolate the gas environments of the two adjacent chambers;

[0031] The first PVD magnetron sputtering chamber, the RPD coating chamber and the second PVD magnetron sputtering chamber are respectively equipped with one or more process gas flow systems containing gas mass flow meters. The gas outlet of the process gas flow system is arranged in the corresponding chamber, and the process gas flow system and the gas mass flow meter arranged therein are connected to the main control unit. The main control unit issues instructions to control the process gas flow system to inject process gas according to the measurement results of the gas mass flow meter.

[0032] An embodiment of the present application further provides a system for preparing a heterojunction solar cell, which includes the aforementioned apparatus for preparing a heterojunction solar cell using RPD and PVD.

[0033] Compared with the prior art, the present invention has at least the following beneficial effects:

[0034] In the embodiments of the present application, a device for preparing heterojunction solar cells using RPD and PVD is provided, which uses a unique method to achieve the combination of RPD and PVD. The TCO film on one side of the cell is deposited by PVD, and the TCO film on the other side is prepared into a composite film by RPD+PVD. This not only improves the energy conversion efficiency of the PVD films on both sides, but also achieves no excessive dependence on RPD equipment, avoiding the problem of being limited by the small production capacity of RPD equipment.

[0035] The heterojunction solar cell manufacturing system of the present application includes the aforementioned apparatus for manufacturing a heterojunction solar cell, and thus has at least all the features and advantages of the aforementioned apparatus for manufacturing a heterojunction solar cell, which are not further described here. Additional aspects and advantages of the present application will be described in part in the following description, and in part will become apparent from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] FIG1 is a schematic structural diagram of an apparatus for preparing a heterojunction solar cell using RPD and PVD, as disclosed in an embodiment of the present application.

[0037] Description of reference numerals:

[0038] C1-inlet lock chamber; C2-inlet buffer chamber; C3-inlet transition chamber; C4-first PVD magnetron sputtering chamber; C5-RPD coating chamber; C6-second PVD magnetron sputtering chamber; C7-exit transition chamber; C8-exit buffer chamber; C9-exit lock chamber. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0040] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0041] Please refer to Figure 1. In some embodiments of the present application, a device for preparing heterojunction solar cells using RPD and PVD is provided. The device can be applied to the preparation process of high-efficiency heterojunction solar cells, such as implementing the coating treatment of solar cells during the preparation process of heterojunction solar cells. The composite device of RPD and PVD can realize the preparation of RPD+PVD composite films, which have excellent photoelectric properties and can improve the performance of heterojunction solar cells. The composite device can fully utilize the advantages of RPD coating and use PVD to share some coating steps, avoiding the shortcomings of insufficient production capacity of RPD equipment, reducing dependence on RPD equipment, and meeting the film quality requirements.

[0042] Specifically, as shown in FIG1 , in one embodiment of the present application, an apparatus for preparing a heterojunction solar cell using RPD and PVD includes:

[0043] The automated loading mechanism, the inlet lock chamber C1, the inlet buffer chamber C2, the inlet transition chamber C3, the first PVD magnetron sputtering chamber C4, the RPD coating chamber C5, the second PVD magnetron sputtering chamber C6, the outlet transition chamber C7, the outlet buffer chamber C8, and the outlet lock chamber C9 are arranged in sequence. Gate valve structures are provided between the automated loading mechanism and the inlet lock chamber C1, between the inlet lock chamber C1 and the inlet buffer chamber C2, between the inlet buffer chamber C2 and the inlet transition chamber C3, between the outlet transition chamber C7 and the outlet buffer chamber C8, and between the outlet buffer chamber C8 and the outlet lock chamber C9. These gate valve structures are used to open to allow the cell to pass through when the previous structure or chamber completes the preparation steps and enters the next chamber, and then close again to maintain the isolation between the two chambers. Gas isolation chambers are installed between the first PVD magnetron sputtering chamber C4 and the RPD coating chamber C5, and between the RPD coating chamber C5 and the second PVD magnetron sputtering chamber C6. Gas isolation prevents gases from flowing between adjacent process chambers, allowing for significantly different process parameters to be selected during coating. The gas isolation devices typically utilize high-speed molecular pumps.

[0044] In this embodiment, each chamber is equipped with a corresponding transmission structure to enable the carrier plate carrying the battery cells to be transported within each chamber and between chambers, thereby reaching the designated workstation for the implementation of each preparation step. The transmission structure can adopt existing structures in the prior art and is not further limited in this application. The automated loading mechanism also adopts existing structures to automatically load the cells.

[0045] In this embodiment, each chamber C1-C9 includes a corresponding chamber (also called an inner cavity) and structures, components, equipment, systems, etc. arranged inside and outside the chamber for realizing the process requirements and / or specific functions of the chamber before, during and after TCO film preparation.

[0046] In this embodiment, the inlet and outlet ends of the inlet lock chamber C1 are atmospheric and the transitional vacuum state of C2, respectively. Therefore, the purpose of inlet lock chamber C1 is to achieve a transition between atmospheric and transitional vacuum states, also known as a rough vacuum state. The inlet valve of inlet lock chamber C1 is exposed to the atmosphere. The inlet valve is open (while the outlet valve is closed) to receive a carrier from the automated loading mechanism under atmospheric conditions. The inlet valve is then closed and vacuum is applied, reducing the pressure within the chamber to a rough vacuum state. An independent vacuum pump group is provided at the chamber of the entry lock chamber C1, which is connected to the inner cavity of the entry lock chamber C1. The chamber of the entry lock chamber C1 is vacuumed through the action of the vacuum pump group. A vacuum gauge is also provided in the chamber of the entry lock chamber C1 for real-time measurement of the vacuum degree in the chamber. The vacuum gauge is connected to the main control unit provided outside. The main control unit compares the real-time vacuum degree measured by the vacuum gauge with the preset vacuum threshold, and controls the operation of the vacuum pump group according to the comparison result, and stops vacuuming when the vacuum degree reaches the vacuum threshold.

[0047] In this embodiment, the inlet buffer chamber C2 receives carriers from the inlet lock chamber C1, heats the carriers and the silicon wafers on them, and then transfers the carriers to the next chamber, the inlet transition chamber C3. Accordingly, the inlet buffer chamber C2 is equipped with a heater and a temperature meter, both of which are connected to a main control unit. The main control unit compares the real-time temperature measured by the temperature meter with a preset temperature threshold, controls the operation of the heater based on the comparison result, and stops heating when the temperature threshold is reached. The inlet and outlet ends of the inlet buffer chamber C2 are the rough vacuum state and the film-forming vacuum state of C3, respectively. Therefore, the inlet buffer chamber C2 also serves as a buffer between the rough vacuum state and the film-forming vacuum state. The inlet-end gate valve of the inlet buffer chamber C2 is connected to the inlet lock chamber C1. When the inlet gate valve is opened (while the outlet gate valve is closed), the inlet buffer chamber C2 receives carriers from the inlet lock chamber C1 while the vacuum between C1 and C2 is exchanged. The inlet gate valve is then closed and a vacuum pump is performed to reduce the pressure within the chamber to the film-forming vacuum state. An independent vacuum pump group is provided at the chamber of the inlet buffer chamber, which is connected to the inner cavity of the inlet buffer chamber C2. The inner cavity of the inlet buffer chamber C2 is evacuated through the action of the vacuum pump group. A vacuum gauge is also provided in the chamber of the inlet buffer chamber C2 for real-time measurement of the vacuum degree in the chamber. The vacuum gauge is connected to the main control unit provided outside. The main control unit compares the real-time vacuum degree measured by the vacuum gauge with the preset vacuum threshold, and controls the operation of the vacuum pump group according to the comparison result, and stops vacuuming when the vacuum degree reaches the vacuum threshold. A gas buffer structure is also installed within the inlet buffer chamber C2. This structure is located at the gate valve of the inlet transition chamber C3 and is connected to the compensation gas system. When the gate valve is opened, the gas buffer structure injects gas to reduce pressure fluctuations in subsequent process chambers. Specifically, before the gate valve between the inlet buffer chamber C2 and the inlet transition chamber C3 is opened, the gas buffer structure begins to introduce gas, bringing the pressure within C2 to the same level as that in the inlet transition chamber C3. This ensures that opening the gate does not cause process pressure fluctuations in the inlet transition chamber C3, the first PVD magnetron sputtering chamber C4, or the RPD coating chamber C5. A gas mass flowmeter is installed within the gas buffer structure to measure the amount of injected gas. Both the gas buffer structure and the gas mass flowmeter are connected to the main control unit, which receives the gas volume and controls the operation of the gas buffer structure based on whether the gas volume meets the required level.

[0048] In this embodiment, the inlet transition chamber C3 receives carriers from the inlet buffer chamber C2, switches the carrier's transmission mode from intermittent to continuous mode, and converts the transmission speed to the transmission speed set by the process. The carriers are then transferred to the next chamber, the first PVD magnetron sputtering chamber C4, for coating. The structure for switching from intermittent mode to continuous mode can adopt existing structures and is not specifically limited in this application. Furthermore, to ensure the vacuum level within the inlet transition chamber C3, an independent vacuum pump assembly is provided within the inlet transition chamber C3. This vacuum pump assembly is connected to the inner cavity of the inlet transition chamber C3 and operates to evacuate the inlet transition chamber C3. A vacuum gauge is also provided within the inlet transition chamber C3 for real-time measurement of the vacuum level within the chamber. The vacuum gauge is connected to an external main control unit. The main control unit compares the real-time vacuum level measured by the vacuum gauge with a preset vacuum threshold and controls the operation of the vacuum pump assembly based on the comparison result, stopping the vacuuming when the vacuum level reaches the threshold.

[0049] In this embodiment, the first PVD magnetron sputtering chamber C4 is equipped with 1-10 pairs of rotating or planar cathodes. Each cathode can be used for downward coating, depositing the first TCO thin film on the p-side (the side bearing the p-type microcrystalline silicon layer) of the incoming solar cell. The first PVD magnetron sputtering chamber C4 is equipped with a process gas flow system containing a gas mass flowmeter. The outlet of this process gas flow system is located within the chamber. Both the process gas flow system and the gas mass flowmeter within it are connected to the main control unit, which controls the injection of process gas according to the main control unit's instructions to ensure that the gas environment within the sputtering chamber meets the requirements for thin film deposition. In addition, in order to ensure that the vacuum degree in the first PVD magnetron sputtering chamber C4 is suitable for thin film preparation, an independent vacuum pump group is provided in the first PVD magnetron sputtering chamber C4, and the vacuum pump group is connected to the inner cavity of the first PVD magnetron sputtering chamber C4. The first PVD magnetron sputtering chamber C4 is vacuumed by the action of the vacuum pump group; a vacuum gauge is also provided in the chamber of the first PVD magnetron sputtering chamber C4 for real-time measurement of the vacuum degree in the chamber. The vacuum gauge is connected to a main control unit provided outside. The main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold, and controls the operation of the vacuum pump group according to the comparison result, and stops vacuuming when the vacuum degree reaches the vacuum threshold.

[0050] In another embodiment, the first PVD magnetron sputtering chamber C4 is equipped with a multi-channel process gas system including a gas mass flow meter. The gas outlets of the multi-channel process gas system are located at various locations within the first PVD magnetron sputtering chamber C4 to facilitate gas injection and ensure gas uniformity.

[0051] In another embodiment, there are multiple vacuum gauges in the first PVD magnetron sputtering chamber C4, that is, a vacuum gauge group. The vacuum gauges in the vacuum gauge group are arranged at various positions in the first PVD magnetron sputtering chamber C4 to collect the vacuum degree at various locations. When leakage or defects occur, the fault location can be measured more quickly and sensitively, thereby further ensuring the quality of thin film sputtering deposition.

[0052] In this embodiment, the RPD coating chamber C5 receives substrates transferred from the first PVD magnetron sputtering chamber C4 and performs dynamic reactive ion plating according to the process settings. After coating, the substrates are transferred to the next chamber, the second PVD magnetron sputtering chamber C6. The RPD chamber is equipped with multiple (e.g., 1 to 8) plasma generators, arranged in any combination within the chamber. Each plasma generator is equipped with a corresponding crucible for mounting a target material, and a target supply mechanism below the crucible automatically supplies the target material. This chamber only coats upward, used to deposit the second TCO film on the back side of the cell. The RPD coating chamber C5 is equipped with a process gas system containing a gas mass flowmeter. The outlet of this process gas system is located within the chamber. The process gas system and the gas mass flowmeter within it are connected to the main control unit, which controls the injection of process gas according to the main control unit's instructions to ensure that the gas environment within the RPD coating chamber meets the requirements for thin film deposition. In addition, in order to ensure that the vacuum degree in the RPD coating chamber C5 is suitable for thin film preparation, an independent vacuum pump group is provided in the RPD coating chamber C5, and the vacuum pump group is connected to the inner cavity of the RPD coating chamber C5. The RPD coating chamber C5 is vacuumed by the action of the vacuum pump group; a vacuum gauge is also provided in the RPD coating chamber C5 for real-time measurement of the vacuum degree in the chamber. The vacuum gauge is connected to an external main control unit. The main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold, and controls the operation of the vacuum pump group according to the comparison result, and stops vacuuming when the vacuum degree reaches the vacuum threshold.

[0053] In another embodiment, a multi-channel process gas system including a gas mass flow meter is installed in the RPD coating chamber C5. The gas outlets of the multi-channel process gas system are located at various locations within the RPD coating chamber C5 to facilitate gas injection and ensure gas uniformity.

[0054] In another embodiment, there are multiple vacuum gauges in the RPD coating chamber C5, that is, a vacuum gauge group. The vacuum gauges in the vacuum gauge group are arranged at various positions in the RPD coating chamber C5 to collect the vacuum degree at various locations. When leakage or defects occur, the fault location can be measured more quickly and sensitively, thereby further ensuring the quality of thin film deposition.

[0055] In this embodiment, the second PVD magnetron sputtering chamber C6 is equipped with multiple pairs (e.g., 1-10 pairs) of rotating or planar cathodes. Any of these cathodes can be used for coating with the film facing upward, collaborating with the RPD chamber to deposit the transparent conductive film on the back side of the battery. The second PVD magnetron sputtering chamber C6 is used to sputter a third TCO film onto the outer surface of the second TCO film (i.e., the side facing away from the silicon wafer). The second and third TCO films together form an RPD+PVD composite film, which serves as the TCO film on the front side of the battery, i.e., the transparent conductive film. The second PVD magnetron sputtering chamber C6 is equipped with a process gas flow system containing a gas mass flowmeter. The outlet of this process gas flow system is located within the chamber. The process gas flow system and its gas mass flowmeter are connected to the main control unit, which controls the injection of process gas according to the main control unit's instructions to ensure that the gas environment within the PVD magnetron sputtering chamber meets the requirements for thin film sputtering deposition. In addition, in order to ensure that the vacuum degree in the second PVD magnetron sputtering chamber C6 is suitable for thin film preparation, an independent vacuum pump group is provided at the second PVD magnetron sputtering chamber C6, and the vacuum pump group is connected to the inner cavity of the second PVD magnetron sputtering chamber C6, and the second PVD magnetron sputtering chamber C6 is evacuated by the action of the vacuum pump group; a vacuum gauge is also provided in the chamber of the second PVD magnetron sputtering chamber C6 for real-time measurement of the vacuum degree in the chamber, and the vacuum gauge is connected to the main control unit provided outside, and the main control unit compares the real-time vacuum degree measured by the vacuum gauge with a preset vacuum threshold, and controls the operation of the vacuum pump group according to the comparison result, and stops vacuuming when the vacuum degree reaches the vacuum threshold.

[0056] In another embodiment, the second PVD magnetron sputtering chamber C6 is equipped with a multi-channel process gas system including a gas mass flow meter. The gas outlets of the multi-channel process gas system are located at various locations within the second PVD magnetron sputtering chamber C6 to facilitate gas injection and ensure gas uniformity.

[0057] In another embodiment, there are multiple vacuum gauges in the second PVD magnetron sputtering chamber C6, that is, a vacuum gauge group. The vacuum gauges in the vacuum gauge group are arranged at various positions in the second PVD magnetron sputtering chamber C6 to collect the vacuum degree at various locations. When leakage or defects occur, the fault location can be measured more quickly and sensitively, thereby further ensuring the quality of thin film deposition.

[0058] The outlet transition chamber C7, outlet buffer chamber C8, outlet lock chamber C9 and the inlet transition chamber C3, inlet buffer chamber C2, inlet lock chamber C1 are arranged in a one-to-one correspondence, wherein:

[0059] The exit transition chamber C7 is used to switch the transport mode of the carriers transferred from the preceding process vacuum chamber from continuous to discontinuous mode, and to convert the transport speed to the process-set transmission speed before transmitting them to the subsequent exit chamber and the unloading mechanism. The exit transition chamber C7 is equipped with an independent vacuum pump and vacuum gauge to ensure that the vacuum level within the exit transition chamber C7 meets the specified requirements after the gate valve is opened and closed.

[0060] The outlet buffer chamber C8 is used to cool the carrier and battery cells transferred from the outlet transition chamber C7, and to transfer the carrier to the next chamber. Like the inlet buffer chamber C2, the outlet buffer chamber C8 is equipped with an independent vacuum pump group and vacuum gauge group to ensure that the vacuum level in the outlet buffer chamber meets the predetermined requirements after the gate valve is opened and closed. It is also equipped with a gas buffer structure. The gas buffer structure is located near the gate valve of the outlet transition chamber C7. The gas buffer structure is connected to the compensation gas gas path system. When the gate valve is opened, gas is injected by the gas buffer structure to reduce the pressure fluctuation of the subsequent process chamber when the gate valve is opened. A gas mass flowmeter is provided in the gas buffer structure to measure the amount of gas injected. The gas buffer structure and the gas mass flowmeter are both connected to the main control unit. The main control unit receives the gas volume and controls the operation of the gas buffer structure according to whether the gas volume meets the standard to reduce the pressure fluctuation of the process chamber when the gate valve is opened.

[0061] As a preferred embodiment, since the inlet transition chamber C3 and the first PVD magnetron sputtering chamber C4, and the second PVD magnetron sputtering chamber C6 and the outlet transition chamber C7 are all connected structures, the two chambers can share a set of vacuum pump groups and vacuum gauge groups, and the vacuum pumping positions and the vacuum gauge setting positions are evenly arranged in the two chambers to ensure the consistency of the air pressure changes in each chamber during the vacuum pumping process.

[0062] Optionally, cooling of the carrier board and the battery cells is achieved by installing a corresponding cooling device in the chamber. The cooling device can be a water cooling device or a temperature control system using other refrigerants to set the chamber ambient temperature.

[0063] The exit lock chamber C9 receives carriers from the exit buffer chamber C8, returns the vacuum chamber to atmospheric pressure, and delivers the carriers to the automated lift platform. Like the entry lock chamber C1, the exit lock chamber C9 is equipped with an independent vacuum pump and vacuum gauge assembly, which evacuates the chamber after the gate valve is opened and closed, ensuring a rough vacuum.

[0064] Optionally, in the present application, the order of front-side coating and back-side coating of the cell can be adjusted. For example, the back-side coating is set in the front and the front-side coating is set in the back. Specifically, the RPD coating chamber C5, the second PVD magnetron sputtering chamber C6, and the first PVD magnetron sputtering chamber C4 are set in sequence, and the setting method of the remaining chambers and each chamber remains unchanged.

[0065] Optionally, some or all of the inlet buffer chamber C2, inlet transition chamber C3, first PVD magnetron sputtering chamber C4, RPD coating chamber C5, second PVD magnetron sputtering chamber C6, and outlet transition chamber C7 in this application may be configured with variable temperature cold traps to control the water vapor content. This application does not impose any specific limitations on the implementation of variable temperature cold traps; existing technologies may be employed.

[0066] Table 1 below shows the performance data of TCO films of different thicknesses prepared by PVD, RPD, and RPD+PVD, including mobility and transmittance.

[0067] Table 1

[0068]

[0069] As shown in Table 1, RPD coating offers significant advantages in both material mobility and transmittance. However, RPD equipment is costly and has limited production capacity. Using a combined RPD + PVD coating method, where the RPD layer only requires 1 / 8 (or more) of the total thickness, can achieve performance comparable to or even superior to that of films produced entirely with RPD.

[0070] It should be pointed out that in the prior art, there is a solution: TCO film is deposited on one side of the battery by RPD, and TCO film is deposited on the other side by PVD+RPD; this preparation method solves its specific technical problems, but since RPD equipment is required for deposition on both sides, and one side is used alone, there is a large demand for the use of RPD equipment, and it is limited by the production capacity of RPD equipment. The technical problems recorded in the background technology of this application will still exist, that is, it cannot solve the technical problems of this application.

[0071] The parts of the present invention that are not described in detail are well known to those skilled in the art.

[0072] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of this application, ordinary technicians in this field can also make many forms without departing from the purpose of this application and the scope of protection of the claims, all of which are within the protection of this application.

Claims

1. A device for preparing heterojunction solar cells using RPD and PVD, characterized in that: The device comprises: an inlet chamber group for realizing the transition from the external environment to the film-making process environment, a first-side coating chamber for preparing a TCO film on the first side of the battery cell, a second-side coating chamber group for preparing a TCO film on the second side of the battery cell, an outlet chamber group for realizing the transition from the film-making process environment to the external environment, and a main control unit connected to each chamber group for controlling the normal operation of each chamber group; The first-side coating chamber includes a first PVD magnetron sputtering chamber; The second-side coating chamber group includes an RPD coating chamber and a second PVD magnetron sputtering chamber arranged in sequence, which are used to prepare an RPD+PVD composite TCO film on the second side of the battery cell; the composite TCO film is a stacked composite film in which a PVD film is deposited on one side of the RPD film away from the battery cell silicon wafer.

2. The device for preparing heterojunction solar cells using RPD and PVD according to claim 1, characterized in that: The first PVD magnetron sputtering chamber is provided with 1-10 pairs of rotating cathodes or planar cathodes, and any cathode is used for downward coating; The RPD coating chamber is equipped with 1-8 plasma generating devices in the chamber, and the plasma generating devices are arranged in any combination; each of the plasma generating devices is correspondingly provided with a crucible for mounting a target material, and a target material supply structure for automatically supplying the target material is provided under the crucible; the plasma generating device coats upwards; The second PVD magnetron sputtering chamber is provided with 1-10 pairs of rotating cathodes or planar cathodes in the chamber, and any cathode is used for coating upward.

3. The device for preparing heterojunction solar cells using RPD and PVD according to claim 1, characterized in that: The inlet chamber group includes an inlet lock chamber, an inlet buffer chamber and an inlet transition chamber which are arranged in sequence; the outlet chamber group includes an outlet transition chamber, an outlet buffer chamber and an outlet lock chamber; a gate valve structure is provided at the inlet end of the inlet lock chamber, between the inlet lock chamber and the inlet buffer chamber, between the inlet buffer chamber and the inlet transition chamber, between the outlet transition chamber and the outlet buffer chamber, between the outlet buffer chamber and the outlet lock chamber, and at the outlet end of the outlet lock chamber; the gate valve structure is connected to the main control unit.

4. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: A first transmission mode changing structure is provided in the chamber of the inlet transition chamber to change the transmission mode of the carrier plate from an intermittent mode to a continuous mode; A second transmission mode changing structure is arranged in the chamber of the outlet transition chamber to change the transmission mode of the carrier plate from a continuous mode to an intermittent mode.

5. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: The chambers of the inlet lock chamber, the inlet buffer chamber, the outlet buffer chamber and the outlet lock chamber are respectively provided with a first vacuum pump group, and the chambers are respectively provided with a first vacuum gauge group; the first vacuum pump group is connected to the corresponding chamber; the first vacuum pump group and the first vacuum gauge group are both connected to the main control unit, and the main control unit controls the first vacuum pump group to work according to the measurement result of the first vacuum gauge group to realize vacuuming of the chamber; The vacuum degrees in the chambers of the inlet lock chamber, the inlet buffer chamber and the inlet transition chamber are successively increased; the vacuum degrees in the chambers of the outlet transition chamber, the outlet buffer chamber and the outlet lock chamber are successively decreased.

6. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: The chamber of the inlet buffer chamber is provided with a heater for heating the carrier and the battery cell and a first thermometer for measuring the real-time temperature. The heater and the first thermometer are both connected to the main control unit, and the main control unit controls the operation of the heater according to the measurement result of the first thermometer.

7. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: The inlet buffer chamber is also provided with a first gas buffer structure, and the first gas buffer structure is arranged near the gate valve of the inlet transition chamber; The first gas buffer structure is connected to an external compensation gas gas circuit system and is used to inject gas to reduce the fluctuation of the pressure of the subsequent process chamber when the gate valve is opened; A first gas mass flow meter is provided in the first gas buffer structure for measuring the amount of injected gas; The first gas buffer structure and the first gas mass flow meter are both connected to the main control unit, and the main control unit controls the operation of the gas buffer structure according to the amount of gas injected.

8. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: A cooler for cooling the carrier board and the battery cells and a second thermometer for measuring the real-time temperature are provided in the chamber of the output buffer chamber. Both the cooler and the second thermometer are connected to the main control unit, and the main control unit controls the operation of the cooler according to the measurement result of the second thermometer.

9. The device for preparing heterojunction solar cells using RPD and PVD according to claim 3, characterized in that: A second gas buffer structure is also provided in the chamber of the outlet buffer chamber, and the second gas buffer structure is provided near the gate valve of the outlet transition chamber; The second gas buffer structure is connected to an external compensation gas gas circuit system and is used to inject gas to reduce the fluctuation of the pressure of the subsequent process chamber when the gate valve is opened; A second gas mass flow meter is provided in the second gas buffer structure for measuring the amount of injected gas; The second gas buffer structure and the second gas mass flow meter are both connected to the main control unit, and the main control unit controls the operation of the second gas buffer structure according to the amount of gas injected.

10. The device for preparing heterojunction solar cells by using RPD and PVD according to claim 3, characterized in that: The inlet transition chamber and the first PVD magnetron sputtering chamber, the second PVD magnetron sputtering chamber and the outlet transition chamber are respectively provided with one or two second vacuum pump groups, and the chambers are respectively provided with second vacuum gauge groups; the second vacuum pump group is connected to the corresponding chamber; the second vacuum pump group and the second vacuum gauge group are both connected to the main control unit, and the main control unit controls the second vacuum pump group to operate according to the measurement result of the second vacuum gauge group to realize vacuuming of the chamber.

11. The device for preparing heterojunction solar cells by using RPD and PVD according to claim 1, characterized in that: A gas isolation chamber is provided between the first PVD magnetron sputtering chamber and the RPD coating chamber, and between the RPD coating chamber and the second PVD magnetron sputtering chamber, so as to isolate the gas environments of the two adjacent chambers; The first PVD magnetron sputtering chamber, the RPD coating chamber and the second PVD magnetron sputtering chamber are respectively equipped with one or more process gas circuit systems containing gas mass flow meters, and the gas outlets of the process gas circuit systems are arranged in the corresponding chambers, and the process gas circuit systems and the gas mass flow meters arranged therein are connected to the main control unit, and the main control unit issues instructions to control the process gas circuit system to inject process gas according to the measurement results of the gas mass flow meter.

12. A system for preparing a heterojunction solar cell, characterized in that: A device for preparing a heterojunction solar cell using RPD and PVD as described in any one of claims 1 to 11.

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