High thermal conductivity, high functionality and high integration heat dissipation substrate applied to LED lighting

Abstract

The present invention relates to a high heat dissipation, high functionality and high integration heat dissipation substrate applied to LED lighting, the substrate having a pattern layer formed in a via hole that passes through upper and lower sides of the substrate, so as to connect the pattern layer of the upper surface and the pattern layer of the lower surface to each other and improve integration, having a predetermined offset provided to a dry film for forming the pattern layer, so as to improve precision, and not undergoing a separate etching process so that an oxide film of the substrate is not damaged, thereby increasing stability, and thus the substrate can be applied to industrial fields such as those of lighting, communication equipment, electric vehicles, defense industrial products, and advanced medical equipment.

Description

High heat dissipation, high functionality, and high integration heat dissipation substrate for LED lighting

[0001] The present invention relates to a high-heat dissipation, high-functionality, high-integration heat dissipation substrate applicable to LED lighting, wherein a pattern layer is formed in a via hole penetrating the upper and lower sides of the substrate to connect the pattern layer on the upper surface and the pattern layer on the lower surface to each other, thereby improving the degree of integration, and a dry film for forming the pattern layer is provided with a predetermined offset to improve precision, and since a separate etching process is not performed, the oxide film of the substrate is not damaged, thereby increasing stability, and thus the present invention relates to a high-heat dissipation, high-functionality, high-integration heat dissipation substrate applicable to LED lighting, which can be applied to industrial fields such as lighting, communication equipment, electric vehicles, defense industry products, and advanced medical devices.

[0002] LEDs are devices that utilize the luminescent phenomenon, emitting both light and heat. Compared to incandescent and fluorescent lamps, they boast superior energy efficiency and long lifespan, making them widely used in various industrial applications, including indoor lighting, streetlights, mobile phones, and electronic billboards. However, only about 20% of the energy consumed by LEDs is used to emit light, with most of the remaining energy being dissipated as heat. This heat generated by LEDs reduces the device's lifespan and illuminance, and contributes to power loss. Therefore, to achieve high-performance LED lighting, it is essential to devise a method to dissipate the heat generated by the LEDs.

[0003] Meanwhile, conventional LED lighting consists of LED elements mounted on a PCB board, with a heat sink featuring high thermal conductivity attached to dissipate the heat generated by the board. However, this type of LED board structure presents inherent challenges, including increased thickness and weight, making it difficult to miniaturize the product.

[0004] Furthermore, conventional LED substrates inherently struggle to achieve high-density integration due to their single-layer nature. Specifically, LED substrates used in lighting, communications equipment, electric vehicles, defense industry products, and advanced medical devices require high heat dissipation, high functionality, and high integration. However, conventional single-layer structures have struggled to meet these requirements.

[0005] The present invention provides a high heat dissipation, high functionality, high integration heat dissipation substrate applicable to LED lighting, in which a pattern layer is formed in a via hole penetrating the upper and lower sides of the substrate to connect the pattern layer on the upper surface and the pattern layer on the lower surface to each other to improve integration, a dry film for forming the pattern layer is provided with a predetermined offset to improve precision, and a separate etching process is not performed so that the oxide film of the substrate is not damaged, thereby increasing stability, and the purpose is to provide a high heat dissipation, high functionality, high integration heat dissipation substrate applicable to LED lighting, which can be applied to industrial fields such as lighting, communication equipment, electric vehicles, defense industry products, and advanced medical devices.

[0006] In order to solve the above problems, a method for manufacturing a double-sided heat-dissipating substrate for high heat dissipation, high functionality, and high integration LED lighting is provided, comprising: a via hole forming step of forming a plurality of via holes penetrating from one surface of an Al substrate to the other surface; an Al2O3 oxide layer forming step of forming an Al2O3 oxide layer on the Al substrate by anodizing the Al substrate on which the via holes are formed; a first dry film attaching step of attaching a first dry film to the Al substrate on which the Al2O3 oxide layer is formed, the first dry film masking an area not corresponding to a pattern; a Ni thin film forming step of depositing a Ni thin film layer on the Al substrate on which the first dry film is attached; a Cu thin film layer deposition step of depositing a Cu thin film layer on the Al substrate on which the Ni thin film layer is deposited; A method for manufacturing a double-sided heat dissipation substrate is provided, comprising: a second dry film attachment step of attaching a second dry film that masks a narrower area than the area masked by the first dry film to an Al substrate on which the Cu thin film layer is deposited; a pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; and a dry film peeling step of peeling off the first and second dry films to remove the Ni thin film layer, the Cu thin film layer, and the pattern layer formed in an area not corresponding to the pattern.

[0007] In one embodiment of the present invention, the double-sided heat dissipation substrate performs the Ni thin film layer formation step, the Cu thin film layer deposition step, the second dry film attachment step, the electrolytic copper plating step, and the dry film peeling step equally on each of the two-sided surfaces of the Al substrate, so that the Ni thin film layer, the Cu thin film layer, and the pattern layer formed in the pattern area of ​​each of the two-sided surfaces of the Al substrate can be connected through the inner circumferential surface of the via hole.

[0008] In one embodiment of the present invention, the Ni thin film layer forming step deposits the Ni thin film layer while vibrating the Al substrate to which the first dry film is attached, and the Cu thin film layer deposition step deposits the Cu thin film layer while vibrating the Al substrate on which the Ni thin film layer is deposited, so that the Ni thin film layer and the Cu thin film layer can be formed on the inner peripheral surface of the via hole formed in the Al substrate.

[0009] In one embodiment of the present invention, the Al substrate to which the first dry film is attached has a pattern area exposed, and the Ni thin film layer forming step can form a Ni thin film layer in an area masked by the first dry film and an area not masked by the first dry film.

[0010] In one embodiment of the present invention, the Al substrate to which the second dry film is attached has a pattern area and an area extended from the pattern area by a predetermined length exposed, and the pattern layer can be formed in a portion of the pattern area and an area not corresponding to the pattern, which are not masked by the second dry film.

[0011] In one embodiment of the present invention, in the Al2O3 oxide film forming step, the Ni thin film layer is directly deposited on the surface of the Al2O3 oxide film layer where pores are formed, without sealing the pores formed in the Al2O3 oxide film layer, so that the adhesion between the Al2O3 oxide film layer and the Ni thin film layer can be improved.

[0012] In one embodiment of the present invention, the Ni thin film layer may have a thickness range of 0.05 to 0.015 micrometers, and the Cu thin film layer may have a thickness range of 0.1 to 0.3 micrometers.

[0013] In order to solve the above problems, a double-sided heat dissipation substrate for high heat dissipation, high functionality, and high integration LED lighting is provided, comprising: a via hole forming step of forming a plurality of via holes penetrating from one surface of an Al substrate to the other surface; an Al2O3 oxide layer forming step of forming an Al2O3 oxide layer on the Al substrate by anodizing the Al substrate on which the via holes are formed; a first dry film attaching step of attaching a first dry film to the Al substrate on which the Al2O3 oxide layer is formed, the first dry film masking an area not corresponding to a pattern; a Ni thin film forming step of depositing a Ni thin film layer on the Al substrate on which the first dry film is attached; a Cu thin film layer depositing step of depositing a Cu thin film layer on the Al substrate on which the Ni thin film layer is deposited; a second dry film attaching step of attaching a second dry film to the Al substrate on which the Cu thin film layer is deposited, the second dry film masking an area narrower than the area masked by the first dry film; A double-sided heat dissipation substrate is provided, which is formed by a pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; and a dry film peeling step of peeling off the first and second dry films to remove the Ni thin film layer, the Cu thin film layer, and the pattern layer formed in an area not corresponding to the pattern.

[0014] According to one embodiment of the present invention, a high heat dissipation, high functionality, high density directional heat dissipation substrate can be formed that can be applied to product groups where heat dissipation is important and double-sided layers can be applied, such as emotional lighting, converter-integrated lighting, DC converters, and double-sided products for battlefields.

[0015] According to one embodiment of the present invention, the pattern layers on the upper and lower surfaces of the substrate can be connected to each other through the pattern layer formed in the via hole.

[0016] According to one embodiment of the present invention, a Ni thin film layer can be placed between an Al2O3 oxide film layer and a Cu thin film layer to improve bonding strength.

[0017] According to one embodiment of the present invention, a pattern plating method that forms a pattern layer only in an area corresponding to a pattern can be used, and thus, compared to a conventional panel plating method, an etching process is not performed, thereby providing an effect in which an anodized Al2O3 oxide film layer is not destroyed.

[0018] According to one embodiment of the present invention, when performing a sputtering process, the Al substrate is vibrated so that the sputtering target can be smoothly deposited on the side of the via hole.

[0019] According to one embodiment of the present invention, by depositing a Ni thin film layer without sealing the Al2O3 oxide layer, the bonding strength between the Al2O3 oxide layer and the Ni thin film layer can be improved.

[0020] According to one embodiment of the present invention, the second dry film has a predetermined offset from the first dry film, so that when the dry film is peeled, the pattern layer corresponding to the pattern area can be prevented from being removed together.

[0021] Figure 1 illustrates a double-sided heat dissipation substrate according to one embodiment of the present invention.

[0022] FIG. 2 illustrates steps of a method for forming a double-sided heat dissipation substrate according to one embodiment of the present invention.

[0023] Figure 3 (a) illustrates a via hole formation step and an Al2O3 oxide film layer formation step according to one embodiment of the present invention.

[0024] Figure 3 (b) illustrates a first dry film attachment step according to one embodiment of the present invention.

[0025] Figure 4 (a) illustrates a Ni thin film layer formation step according to one embodiment of the present invention.

[0026] Figure 4 (b) illustrates a Cu thin film layer formation step according to one embodiment of the present invention.

[0027] Figure 5 (a) illustrates a second dry film attachment step according to one embodiment of the present invention.

[0028] Figure 5 (b) illustrates a pattern layer formation step according to one embodiment of the present invention.

[0029] Figure 6 illustrates a dry film peeling step according to one embodiment of the present invention.

[0030] FIG. 7 illustrates an area masked by a first dry film and a second dry film according to one embodiment of the present invention and an area exposed without masking.

[0031] Figure 8 illustrates a cross-section of a heat dissipation substrate by a step of forming an Al2O3 oxide film layer according to one embodiment of the present invention.

[0032] Figure 9 illustrates detailed processes of a Ni thin film layer formation step and a Cu thin film layer formation step according to one embodiment of the present invention.

[0033] Figure 10 illustrates a conventional method for forming a heat sink substrate.

[0034]

[0035] Hereinafter, various embodiments and / or aspects are now disclosed with reference to the drawings. In the following description, for purposes of explanation, numerous specific details are set forth to provide a thorough understanding of one or more aspects. However, it will be apparent to one skilled in the art that such aspects may be practiced without these specific details. The following description and the attached drawings detail specific exemplary aspects of one or more aspects. However, these aspects are exemplary, and it is to be understood that any of the various methods within the principles of the various aspects may be utilized, and the description is intended to encompass all such aspects and their equivalents.

[0036]

[0037] Additionally, various aspects and features will be presented by systems that may include a number of devices, components, and / or modules. It is also to be understood and appreciated that various systems may include additional devices, components, and / or modules, and / or may not include all of the devices, components, and modules discussed in connection with the drawings.

[0038] The terms "embodiment," "example," "aspect," and "example" used herein may not be construed as implying that any aspect or design described is better or advantageous than other aspects or designs. The terms "part," "component," "module," "system," and "interface" used below generally refer to computer-related entities, and may refer to, for example, hardware, a combination of hardware and software, or software.

[0039] Additionally, it should be understood that the terms "comprises" and / or "comprising" imply the presence of the features and / or components, but do not preclude the presence or addition of one or more other features, components and / or groups thereof.

[0040] Additionally, terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by these terms. These terms are used solely to distinguish one component from another. For example, without departing from the scope of the present invention, a first component may be referred to as a second component, and similarly, a second component may also be referred to as a first component. The term and / or includes a combination of a plurality of related described items or any of a plurality of related described items.

[0041] Additionally, in the embodiments of the present invention, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention pertains. Terms defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in the embodiments of the present invention.

[0042]

[0043] Figure 1 illustrates a double-sided heat dissipation substrate (1) according to one embodiment of the present invention.

[0044]

[0045] As illustrated in FIG. 1, the double-sided heat dissipation substrate (1) performs the first dry film attachment step, the Ni thin film layer formation step, the Cu thin film layer deposition step, the second dry film attachment step, the electrolytic copper plating step, and the dry film peeling step equally on each of the two-sided surfaces of the Al substrate (10), so that the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50) formed in the pattern area (A) of each of the two-sided surfaces of the Al substrate (10) can be connected through the inner circumferential surface of the via hole (80).

[0046]

[0047] Specifically, a double-sided heat dissipation substrate (1) according to one embodiment of the present invention may include a plurality of via holes (80) penetrating the upper and lower surfaces, and a pattern layer (50) formed on the upper surface of the double-sided heat dissipation substrate (1) and a pattern layer (50) formed on the lower surface may be connected to each other through a pattern layer (50) formed on the inner circumferential surface of the via hole (80).

[0048] Preferably, in one embodiment of the present invention, the pattern layer (50) can be formed on an Al2O3 oxide layer (20), a Ni thin film layer (30), and a Cu thin film layer (40) sequentially deposited on an Al substrate (10), and the Al2O3 oxide layer (20), the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50) can be smoothly deposited on a portion corresponding to the inner circumferential surface of the via hole (80).

[0049] As a result, the double-sided heat dissipation substrate (1) according to one embodiment of the present invention has excellent heat dissipation properties and can be applied to LED lighting that requires a high level of heat dissipation performance. Specifically, it can be a thermal via formed below or near an LED element, which is the main heat source of the LED lighting, and dissipates heat generated on one side of the substrate to the other side.

[0050] In addition, the double-sided heat dissipation substrate (1) according to one embodiment of the present invention can have an improved degree of integration by improving the precision of the pattern layer (50). Specifically, the pattern layer (50) corresponds to a signal transmission layer that transmits an electrical signal in the double-sided heat dissipation substrate (1), and a semiconductor circuit substrate with a high degree of integration can be manufactured by connecting the patterns on the upper and lower surfaces of the double-sided heat dissipation substrate (1) through a via hole (80).

[0051]

[0052] Hereinafter, a method for manufacturing a double-sided heat dissipation substrate (1) of the present invention having the above-described characteristics will be described in detail.

[0053]

[0054] Figure 2 illustrates steps of a method for forming a double-sided heat dissipation substrate (1) according to one embodiment of the present invention.

[0055]

[0056] As illustrated in FIG. 2, a method for manufacturing a double-sided heat-dissipating substrate (1) for high heat dissipation, high functionality, and high integration LED lighting comprises: a via hole forming step of forming a plurality of via holes (80) penetrating from one surface of an Al substrate (10) to the other surface; an Al2O3 oxide layer forming step of forming an Al2O3 oxide layer (20) on the Al substrate (10) by anodizing the Al substrate (10) on which the via holes (80) are formed; a first dry film attaching step of attaching a first dry film (60) that masks an area that does not correspond to a pattern to the Al substrate (10) on which the Al2O3 oxide layer (20) is formed; and a Ni thin film forming step of depositing a Ni thin film layer (30) on the Al substrate (10) on which the first dry film (60) is attached. It may include a Cu thin film layer deposition step of depositing a Cu thin film layer (40) on an Al substrate (10) on which the Ni thin film layer (30) is deposited; a second dry film attachment step of attaching a second dry film (70) that masks an area narrower than the area masked by the first dry film (60) on the Al substrate (10) on which the Cu thin film layer (40) is deposited; a pattern layer formation step of performing wet electroplating to form a pattern layer (50) in an area not masked by the second dry film (70); and a dry film peeling step of peeling off the first dry film (60) and the second dry film (70) to remove the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50) formed in an area that does not correspond to the pattern.

[0057]

[0058] First, the main material of the double-sided heat dissipation substrate (1) of the present invention may be an aluminum substrate (10) (aluminum substrate) typically used in manufacturing PCB substrates. Specifically, the aluminum substrate (10) may be an aluminum substrate cut to a certain size and having excellent thermal conductivity, electrical insulation, and processability.

[0059]

[0060] Step S1 is a via hole formation step, which may correspond to a step of forming a via hole (80) in an Al substrate (10). Specifically, a via hole (80) may be formed by penetrating the upper and lower surfaces of a flat Al substrate (10) by a predetermined diameter. Preferably, the position, diameter, number, etc. of the via hole (80) may be flexibly determined depending on the pattern to be formed in the Al substrate (10).

[0061] In addition, in one embodiment of the present invention, a via hole (80) may be formed in an Al substrate (10) by applying any one of a plurality of known techniques for processing a via hole (80). For example, the via hole (80) may be formed by performing a laser drilling process at a location where the via hole (80) is to be formed while the Al substrate (10) is impregnated in a potassium hydroxide (KOH) aqueous solution.

[0062]

[0063] In one embodiment of the present invention, the diameter of the via hole (80) may have a range of 0.2 to 1.0 t (mm).

[0064]

[0065] Step S2 is an Al2O3 oxide layer formation step, which may correspond to a step of forming an Al2O3 oxide layer (20) by anodizing an Al substrate (10). Specifically, the Al2O3 oxide layer (20) may be formed on all surfaces of the Al substrate (10). Preferably, the Al2O3 oxide layer (20) may be formed on all surfaces of the Al substrate (10), including the upper surface, the lower surface, and the inner surface of the via hole (80) of the Al substrate (10). More preferably, the Al2O3 oxide layer (20) may be formed on all surfaces, including the upper surface, the lower surface, and the inner surface of the via hole (80), of the Al substrate (10), regardless of whether it corresponds to a pattern area (A) in which a pattern layer (50) is to be formed.

[0066]

[0067] Step S3 is a first dry film attachment step, which may correspond to a step of attaching a first dry film (60) so that a pattern area (A) on which a pattern layer (50) is to be formed is exposed on an Al substrate (10) on which an Al2O3 oxide layer (20) is deposited. Specifically, the first dry film (60) masks an area on which a pattern layer (50) is not to be formed, and conversely, exposes a pattern area (A) on which a pattern layer (50) is to be formed, so that when the first dry film (60) is peeled off, only the pattern layer (50) formed on the pattern area (A) remains on the Al substrate (10).

[0068]

[0069] Step S4 is a Ni thin film layer formation step, which may correspond to a step of forming a Ni thin film layer (30) on an Al substrate (10) to which a first dry film (60) is attached. Specifically, the Ni thin film layer (30) has intermediate properties between the Al2O3 oxide film layer (20) and the Cu thin film layer (40), so that the deposition ability of the Cu thin film layer (40) can be improved compared to the Al2O3 oxide film layer (20). In addition, the Ni thin film layer (30) can be formed on both the area masked by the first dry film (60) and the area not masked.

[0070]

[0071] Step S5 is a Cu thin film layer (40) formation step, which may correspond to a step of forming a Cu thin film layer (40) on an Al substrate (10) on which a Ni thin film layer (30) is formed. Specifically, the Cu thin film layer (40) may be deposited on the Ni thin film layer (30). That is, the Cu thin film layer (40) may also be formed on both the area masked by the first dry film (60) and the area not masked.

[0072]

[0073] Step S6 is a second dry film attachment step, which may correspond to a step of attaching a second dry film (70) so that the pattern area (A) on which a pattern layer (50) is to be formed is exposed on the Al substrate (10) on which a Ni thin film layer (30) and a Cu thin film layer (40) are deposited. Specifically, the second dry film (70) masks an area where the pattern layer (50) is not to be formed, and conversely, exposes the pattern area (A) on which the pattern layer (50) is to be formed, so that when the wet copper plating process (the pattern layer formation step described below) is performed in a state where the second dry film (70) is attached, the pattern layer (50) is formed only on the pattern area (A).

[0074] Meanwhile, in one embodiment of the present invention, there is a predetermined offset (d) in the area masked by the first dry film (60) and the second dry film (70), and a detailed description thereof will be provided later.

[0075]

[0076] Step S7 is a pattern layer formation step, which may correspond to a step of forming a pattern layer (50) in a pattern area (A). Specifically, as described above, by performing a wet copper plating process on an Al substrate (10) to which a second dry film (70) is attached, a pattern layer (50) may be formed in an area not masked by the second dry film (70).

[0077]

[0078] Meanwhile, in one embodiment of the present invention, one or more of the above-described steps may be performed on each of the upper and lower surfaces of the Al substrate (10), so that the pattern layer (50) may be formed on each of the upper and lower surfaces of the Al substrate (10) and the inner surface of the via hole (80). Specifically, in one embodiment of the present invention, after step S2, steps S3 to S8 may be repeatedly performed on each of the upper and lower surfaces of the Al substrate (10).

[0079]

[0080] Below, a cross-sectional view of a double-sided heat dissipation substrate (1) is illustrated when the above-described processes are sequentially performed. Meanwhile, in FIGS. 3 to 6, A denotes a 'pattern area (A)' where a pattern layer (50) is formed on the double-sided heat dissipation substrate (1), and B denotes a 'area (B) not corresponding to a pattern area' where a pattern layer (50) is not formed.

[0081]

[0082] Figure 3 (a) illustrates a via hole formation step and an Al2O3 oxide film layer formation step according to one embodiment of the present invention.

[0083]

[0084] As shown in (a) of Fig. 3, a plurality of via holes (80) penetrating the upper and lower surfaces of the Al substrate (10) can be formed, and an Al2O3 oxide film layer (20) can be formed on all surfaces of the Al substrate (10).

[0085] Specifically, by performing anodizing, an Al2O3 oxide layer (20), which is an oxide film layer, can be formed on all surfaces of an Al substrate (10), and more preferably, an Al2O3 oxide layer (20) can be formed on all of the upper surface, lower surface, and inner surface of a via hole (80) of the Al substrate (10). That is, the Al substrate (10) can be protected without being exposed to the outside by the Al2O3 oxide layer (20).

[0086] Meanwhile, in one embodiment of the present invention, the anodizing process may be a hard anodizing process.

[0087]

[0088] Figure 3 (b) illustrates a first dry film (60) attachment step according to one embodiment of the present invention.

[0089]

[0090] As shown in (b) of Fig. 3, the Al substrate (10) to which the first dry film (60) is attached has a pattern area (A) exposed, and the Ni thin film layer forming step can form a Ni thin film layer (30) in the area masked by the first dry film (60) and the area not masked.

[0091]

[0092] A first dry film (60) can be attached to an Al substrate (10) on which an Al2O3 oxide film layer (20) is formed. Specifically, the first dry film (60) is a film-like material for forming a circuit or pattern in a PCB, BGA, etc., and when the first dry film (60) is attached, only a portion of the surface of the Al substrate (10) corresponding to the pattern area (A) can be exposed.

[0093] In other words, the first dry film (60) may be a film that does not mask the area corresponding to the pattern area (A) and masks the area (B) that does not correspond to the pattern area. In other words, when the first dry film (60) is attached to the Al substrate (10), the area corresponding to the pattern area (A) is exposed, and the part that does not correspond to the pattern area (A) may be covered by the first dry film (60).

[0094]

[0095] Meanwhile, in one embodiment of the present invention, first dry films (60) having different shapes may be attached to the upper and lower surfaces of the Al substrate (10), respectively. Specifically, in FIG. 3 (b), the first dry films (60) attached to the upper and lower surfaces of the Al substrate (10) mask corresponding areas, but in another embodiment of the present invention, by attaching first dry films (60) having different shapes to the upper and lower surfaces of the Al substrate (10), the first dry films (60) attached to the upper and lower surfaces may mask different areas.

[0096] Preferably, the shape of the first dry film (60) attached to the upper and lower surfaces of the Al substrate (10) can be determined by considering the pattern shape to be formed on each of the upper and lower surfaces of the double-sided heat dissipation substrate (1).

[0097] That is, in one embodiment of the present invention, different shapes of patterns can be formed on each of the upper and lower surfaces of the double-sided heat dissipation substrate (1).

[0098]

[0099] Figure 4 (a) illustrates a step of forming a Ni thin film layer (30) according to one embodiment of the present invention.

[0100]

[0101] As shown in (a) of Fig. 4, a Ni thin film layer (30) can be formed on an Al substrate (10) to which a first dry film (60) is attached. Specifically, the Ni thin film layer (30) can be formed using Ar and O2 gases, an applied power of 1 to 10 kW, and a density of 1 to 5 x 10 -3 It can be formed by sputtering under torr conditions.

[0102] Additionally, the Ni thin film layer (30) may have a thickness ranging from 27 to 33 nm. Preferably, the Ni thin film layer (30) may be 30 nm.

[0103]

[0104] The Ni thin film layer (30) formed by the sputtering process under the above conditions can be formed on all surfaces of the Al substrate (10) to which the first dry film (60) is attached. Specifically, the Ni thin film layer (30) can be formed in a pattern area (A) where the Al2O3 oxide film layer (20) is exposed because it is not masked by the first dry film (60) and in an area (B) that does not correspond to a pattern area where the Al2O3 oxide film layer (20) is not exposed because it is masked by the first dry film (60).

[0105] Preferably, the Ni thin film layer (30) can be formed on the Al2O3 oxide film layer (20) in the pattern area (A) of the upper and lower surfaces of the Al substrate (10), and the Ni thin film layer (30) can be formed on the first dry film (60) in the area (B) that does not correspond to the pattern area.

[0106]

[0107] Meanwhile, as described above, in one embodiment of the present invention, the step of forming a Ni thin film layer (30) can be performed on each of the upper and lower surfaces of the Al substrate (10), and through this process, a Ni thin film layer (30) can be smoothly formed on the side surface of the via hole (80).

[0108]

[0109] Meanwhile, Ni forming the Ni thin film layer (30) has excellent affinity with Al forming the Al2O3 oxide layer (20) and Cu forming the Cu thin film layer (40), so that the deposition ability for the Cu thin film layer (40) can be superior to that for the Al2O3 oxide layer (20). Specifically, the deposition ability can be superior when the Ni thin film layer (30) is deposited on the Al2O3 oxide layer (20) and the Cu thin film layer (40) is deposited on the Ni thin film layer (30) compared to when the Cu thin film layer (40) is directly deposited on the Al2O3 oxide layer (20).

[0110]

[0111] Figure 4 (b) illustrates a step of forming a Cu thin film layer (40) according to one embodiment of the present invention.

[0112]

[0113] As shown in (b) of Fig. 4, a Cu thin film layer (40) can be formed on an Al substrate (10) on which a Ni thin film layer (30) is formed. Specifically, the Cu thin film layer (40) is formed using Ar and O2 gases, an applied power of 1 to 10 kW, and a pressure of 1 to 5 x 10 -3 It can be formed by sputtering under torr conditions.

[0114] Additionally, the Cu thin film layer (40) may have a thickness ranging from 360 to 440 nm. Preferably, the Cu thin film layer (40) may be 400 nm.

[0115] Preferably, the Cu thin film layer (40) can have a wider thickness than the Ni thin film layer (30).

[0116]

[0117] The Cu thin film layer (40) formed by the sputtering process under the above conditions can be formed on all surfaces of the Al substrate (10) on which the Ni thin film layer (30) is formed. Specifically, as described above, the Ni thin film layer (30) can be formed in a pattern area (A) where the Al2O3 oxide film layer (20) is exposed because it is not masked by the first dry film (60) and in an area (B) that does not correspond to the pattern area where the Al2O3 oxide film layer (20) is not exposed because it is masked by the first dry film (60), and the Cu thin film layer (40) formed on the Ni thin film layer (30) can also be formed in all areas masked or not masked by the first dry film (60) in the same manner.

[0118] Preferably, the Cu thin film layer (40) can be formed on the Ni thin film layer (30) in the pattern area (A) and the area (B) not corresponding to the pattern area on the upper and lower surfaces of the Al substrate (10).

[0119]

[0120] Meanwhile, as described above, in one embodiment of the present invention, the step of forming a Cu thin film layer (40) can be performed on each of the upper and lower surfaces of the Al substrate (10), and through this process, a Cu thin film layer (40) can be smoothly formed on the side surface of the via hole (80).

[0121]

[0122] Figure 5 (a) illustrates a second dry film (70) attachment step according to one embodiment of the present invention.

[0123]

[0124] As shown in (a) of Fig. 5, the Al substrate (10) to which the second dry film (70) is attached has a pattern area (A) and an area extended from the pattern area (A) by a predetermined length exposed, and the pattern layer (50) can be formed in a portion of the pattern area (A) and an area not corresponding to the pattern, which is not masked by the second dry film (70).

[0125]

[0126] A second dry film (70) can be attached to an Al substrate (10) on which a Cu thin film layer (40) is formed. Specifically, the second dry film (70) is a film-like material for forming a circuit or pattern in a PCB, BGA, etc., and when the second dry film (70) is attached, a portion of the surface of the Al substrate (10) corresponding to the pattern area (A) and a portion of the area (B) not corresponding to the pattern area can be exposed. Preferably, when the second dry film (70) is attached, the entire area corresponding to the pattern area (A) on the upper and lower surfaces of the Al substrate (10) is exposed, and a portion (a portion corresponding to the offset (d)) of the portion corresponding to the pattern area (A) may not be exposed.

[0127] Meanwhile, the side of the via hole (80) to which the second dry film (70) is not attached can be exposed without being masked by the second dry film (70).

[0128]

[0129] That is, there may be an offset (d) in the areas masked by the first dry film (60) and the second dry film (70). Specifically, in (a) of FIG. 5, the first dry film (60) masks an area (B) that does not correspond to the pattern area, and the second dry film (70) masks an area that is narrower by the offset (d) than the area (B) that does not correspond to the pattern area.

[0130] That is, the second dry film (70) can mask an area that is narrower by a predetermined area than the area masked by the first dry film (60). Specifically, the second dry film (70) can mask an area that is narrower by an offset (d) from the boundary between the 'pattern area (A)' and the 'area (B) not corresponding to the pattern area' toward the 'area (B) not corresponding to the pattern area', and expose the area that does not correspond thereto.

[0131]

[0132] In one embodiment of the present invention, the offset may be 1 to 10 micrometers. Preferably, the offset may be 10 micrometers.

[0133]

[0134] That is, the second dry film (70) may be a film that does not mask the area corresponding to the offset (d) among the 'area corresponding to the pattern area (A)' and the 'area not corresponding to the pattern area (B)', and masks the area not corresponding to the offset (d) among the 'area not corresponding to the pattern area (B)'.

[0135]

[0136] Meanwhile, in one embodiment of the present invention, second dry films (70) having different shapes may be attached to the upper and lower surfaces of the Al substrate (10), respectively. Specifically, in FIG. 5 (b), the second dry films (70) attached to the upper and lower surfaces of the Al substrate (10) mask corresponding areas, but in another embodiment of the present invention, by attaching second dry films (70) having different shapes to the upper and lower surfaces of the Al substrate (10), the second dry films (70) attached to the upper and lower surfaces may mask different areas.

[0137] Preferably, the shape of the second dry film (70) attached to the upper and lower surfaces of the Al substrate (10) can be determined by considering the pattern shape to be formed on each of the upper and lower surfaces of the double-sided heat dissipation substrate (1).

[0138] That is, in one embodiment of the present invention, different shapes of patterns can be formed on each of the upper and lower surfaces of the double-sided heat dissipation substrate (1).

[0139]

[0140] Figure 5 (b) illustrates a pattern layer (50) formation step according to one embodiment of the present invention.

[0141]

[0142] As illustrated in (b) of Fig. 5, a pattern layer (50) can be formed on an Al substrate (10) to which a second dry film (70) is attached. Specifically, a wet copper plating process can be performed on the Al substrate (10) to which a second dry film (70) is attached, so that a pattern layer (50) can be formed in an area not masked by the second dry film (70).

[0143] Preferably, on the upper and lower surfaces of the Al substrate (10), a pattern layer (50) may be formed in an area not masked by the second dry film (70), and a pattern layer (50) may not be formed in an area masked by the second dry film (70). In other words, a pattern layer (50) may also be formed in an area corresponding to the offset (d) in (b) of Fig. 5.

[0144] In addition, a pattern layer (50) may be formed on the side of the via hole (80) to which the second dry film (70) is not attached. Specifically, an Al2O3 oxide film layer (20), a Ni thin film layer (30), a Cu thin film layer (40), and a pattern layer (50) may be sequentially formed on the side of the via hole (80). Preferably, the diameter of the via hole (80) may be larger than the sum of the thicknesses of the Al2O3 oxide film layer (20), the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50). More preferably, the diameter of the via hole (80) may be at least twice the sum of the thicknesses of the Al2O3 oxide film layer (20), the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50).

[0145] In such a specification, when an Al2O3 oxide layer (20), a Ni thin film layer (30), a Cu thin film layer (40), and a pattern layer (50) are formed on the inner surface of a via hole (80), the opposing pattern layers (50) are not bonded to each other and can form independent circuits.

[0146]

[0147] Figure 6 illustrates a dry film peeling step according to one embodiment of the present invention.

[0148]

[0149] As shown in Fig. 6, the Ni thin film layer (30) may have a thickness range of 0.05 to 0.015 micrometers, and the Cu thin film layer (40) may have a thickness range of 0.1 to 0.3 micrometers.

[0150]

[0151] Specifically, by peeling off the first dry film (60) and the second dry film (70), the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50) formed in the area (B) that does not correspond to the pattern area can be removed. Specifically, when the first dry film (60) is peeled off, the Ni thin film layer (30), the Cu thin film layer (40) formed on the upper side of the first dry film (60), and a portion of the pattern layer (50) (formed in the area corresponding to the offset) can be removed.

[0152] Meanwhile, by peeling off the first dry film (60) and the second dry film (70), the Al2O3 oxide film layer (20), the Ni thin film layer (30), the Cu thin film layer (40), and the pattern layer (50) can be left only in the pattern area (A).

[0153]

[0154] Meanwhile, in the case of manufacturing a heat dissipation substrate using conventional technology, a portion of the pattern layer (50) that does not correspond to the pattern area (A) may also be removed during the process of peeling off the second dry film (70). Specifically, as described above, the pattern layer (50) is formed in an area not masked by the second dry film (70), but during the process of peeling off the second dry film (70), a portion of the pattern layer (50) that is in contact with the second dry film (70) may be removed together.

[0155] That is, in the case where the second dry film (70) is attached in a form completely corresponding to the pattern shape to be formed on the double-sided heat dissipation substrate (1), a part of the pattern layer (50) corresponding to the pattern area (A) may also be removed in the process of peeling off the second dry film (70), and as a result, a pattern layer (50) that does not correspond to the pattern shape initially designed may be formed on the double-sided heat dissipation substrate (1).

[0156]

[0157] In order to improve such a problem, the double-sided heat dissipation substrate (1) of the present invention provides a predetermined offset (d) to the second dry film (70) as described above, so that even if a part of the pattern layer (50) in contact with the second dry film (70) falls off in the process of peeling the second dry film (70), a pattern layer (50) corresponding to the pattern shape initially designed can be formed on the double-sided heat dissipation substrate (1).

[0158] Specifically, referring to (b) of FIG. 5, in the process of peeling off the second dry film (70), the pattern layer (50) in contact with the second dry film (70) in the area corresponding to the offset (d) is removed, so that the pattern layer (50) formed in the pattern area (A) is not removed and remains, thereby forming a pattern of the double-sided heat dissipation substrate (1). Consequently, according to one embodiment of the present invention, a more precise circuit pattern can be formed on a double-sided circuit substrate.

[0159]

[0160] In one embodiment of the present invention, the Al substrate (10) on which the pattern layer (50) is formed is immersed in a neutral chemical, and the first dry film (60) can be peeled off by allowing the neutral chemical to dissolve the first dry film (60) through the Ni thin film layer (30) and the Cu thin film layer (40) having a predetermined moisture permeability.

[0161] Specifically, the first deposition plating layer (Cu thin film layer (40)) has a lower moisture permeability than the second electroplating layer (pattern layer (50)), so the relatively low moisture permeability can be compensated for by performing electroplating for the offset (d) section.

[0162]

[0163] As a result, the double-sided heat dissipation substrate (1) of the present invention manufactured by sequentially performing the above processes can have an Al2O3 oxide layer (20), a Ni thin film layer (30), a Cu thin film layer (40), and a pattern layer (50) formed on the pattern area (A) of the upper and lower surfaces of the Al substrate (10), as shown in FIG. 6, and an Al2O3 oxide layer (20) can be formed on the area (B) that does not correspond to the pattern area.

[0164] In addition, an Al2O3 oxide layer (20), a Ni thin film layer (30), a Cu thin film layer (40), and a pattern layer (50) are formed on the side of the via hole (80), so that the pattern layer (50) formed in the pattern area (A) of the upper and lower surfaces can be connected through the pattern layer (50) formed on the side of the via hole (80).

[0165]

[0166] FIG. 7 illustrates an area masked by a first dry film (60) and a second dry film (70) according to one embodiment of the present invention and an area exposed without masking.

[0167]

[0168] Figure 7 (a) illustrates the Al substrate (10) when the first dry film (60) is attached. Specifically, the area exposed on the upper or lower surface of the Al substrate (10) without being masked by the first dry film (60) may correspond to a pattern to be formed on the double-sided heat dissipation substrate (1). In other words, the area masked by the first dry film (60) on the upper or lower surface of the Al substrate (10) may correspond to an area that does not correspond to a pattern to be formed on the double-sided heat dissipation substrate (1).

[0169] Meanwhile, Fig. 7 (b) illustrates the Al substrate (10) when the second dry film (70) is attached. Specifically, the area exposed on the upper or lower surface of the Al substrate (10) without being masked by the second dry film (70) may correspond to an area wider than the pattern to be formed on the double-sided heat dissipation substrate (1). In other words, the area masked by the second dry film (70) on the upper or lower surface of the Al substrate (10) may correspond to a narrower range than the area not corresponding to the pattern to be formed on the double-sided heat dissipation substrate (1).

[0170] That is, the second dry film (70) can mask an area as narrow as the offset (d) compared to the area masked by the first dry film (60).

[0171] As a result, when the second dry film (70) is peeled off, a part of the pattern layer (50) in contact with the second dry film (70) will be removed together, but since the part is located in the area corresponding to the offset (d), the pattern layer (50) formed in the pattern area (A) is not removed, and the pattern of the double-sided heat dissipation substrate (1) can be formed.

[0172]

[0173] In one embodiment of the present invention, the offset (d) may be 40 to 60 micrometers. Preferably, the offset (d) may be 50 micrometers.

[0174]

[0175] Figure 8 illustrates a cross-section of a heat dissipation substrate by a step of forming an Al2O3 oxide film layer according to one embodiment of the present invention.

[0176]

[0177] As shown in Fig. 8, in the Al2O3 oxide film forming step, the pores (21) formed in the Al2O3 oxide film layer (20) are not sealed, and the Ni thin film layer (30) is directly deposited on the surface of the Al2O3 oxide film layer (20) where the pores (21) are formed, so that the adhesion between the Al2O3 oxide film layer (20) and the Ni thin film layer (30) can be improved.

[0178]

[0179] Meanwhile, as illustrated in (a) of FIG. 8, in one embodiment of the present invention, a Ni thin film layer (30) can be directly deposited on the surface of an Al2O3 oxide film layer (20) that has not been subjected to a sealing process. Specifically, a plurality of pores (21), which are microscopic holes, can be formed on the surface of an Al2O3 oxide film layer (20) formed by an anodizing process, and the Ni thin film layer (30) can be directly deposited on the surface of an Al2O3 oxide film layer (20) that has not been subjected to a sealing process.

[0180]

[0181] In this case, when the surface of the Al2O3 oxide film layer (20) on which pores (21) are formed is not sealed and the Ni thin film layer (30) is directly deposited, the Ni thin film layer (30) is directly deposited on the Al2O3 oxide film layer (20), so that the bonding strength between the Ni thin film layer (30) and the Al2O3 oxide film layer (20) can be improved.

[0182]

[0183] Meanwhile, as illustrated in (b) of FIG. 8, in another embodiment of the present invention, a Ni thin film layer (30) can be deposited on the surface of a sealed Al2O3 oxide film layer (20). Specifically, a plurality of pores (21), which are microscopic holes, can be formed on the surface of the Al2O3 oxide film layer (20) formed by an anodizing process, and a sealing layer (22) can be formed on the Al2O3 oxide film layer (20) by performing the sealing process. The Ni thin film layer (30) can be deposited on the sealing layer (22) formed on the Al2O3 oxide film layer (20) by the sealing process.

[0184]

[0185] In another embodiment of the present invention, the sealing process may include at least one of a water sealing process, a metal salt sealing process, an organic substance sealing process, and a painting sealing process.

[0186]

[0187] Figure 9 illustrates detailed processes of a Ni thin film layer formation step and a Cu thin film layer formation step according to one embodiment of the present invention.

[0188]

[0189] As illustrated in FIG. 9, the Ni thin film layer formation step deposits the Ni thin film layer (30) while vibrating the Al substrate (10) to which the first dry film (60) is attached, and the Cu thin film layer deposition step deposits the Cu thin film layer (40) while vibrating the Al substrate (10) on which the Ni thin film layer (30) is deposited, so that the Ni thin film layer (30) and the Cu thin film layer (40) can be formed on the inner peripheral surface of the via hole (80) formed in the Al substrate (10).

[0190]

[0191] As described above, the Ni thin film layer (30) can be deposited by performing a sputtering process using Ni as a sputtering target. Meanwhile, in one embodiment of the present invention, the Ni thin film layer forming step can be performed while vibrating the Al substrate (10) (more specifically, the Al substrate (10) on which the Al2O3 oxide film layer (20) is formed).

[0192] Specifically, in the present invention, it is preferable that the Ni thin film layer (30) be uniformly formed on all surfaces of the Al substrate (10) regardless of the first dry film (60), and more specifically, it is preferable that the Ni thin film layer (30) be uniformly formed on the side surfaces of the via hole (80).

[0193] To this end, in one embodiment of the present invention, by performing the Ni thin film layer formation step while vibrating the Al substrate (10), the Ni thin film layer (30) can be uniformly formed on the side surface of the via hole (80).

[0194]

[0195] Meanwhile, although Fig. 9 illustrates a sputtering process using Ni as a sputtering target, the sputtering process can be performed in the same manner when sputtering using Cu as a sputtering target. Specifically, in one embodiment of the present invention, the Cu thin film layer formation step can be performed while vibrating the Al substrate (10) (more specifically, the Al substrate (10) on which the Ni thin film layer (30) is formed).

[0196] More specifically, in the present invention, it is preferable that the Cu thin film layer (40) be uniformly formed on all surfaces of the Al substrate (10) regardless of the first dry film (60), and more specifically, it is preferable that the Cu thin film layer (40) be uniformly formed on the side surfaces of the via hole (80).

[0197] To this end, in one embodiment of the present invention, by performing the Cu thin film layer formation step while vibrating the Al substrate (10), the Cu thin film layer (40) can be uniformly formed on the side surface of the via hole (80).

[0198]

[0199] Figure 10 illustrates a conventional method for forming a heat sink substrate.

[0200]

[0201] As shown in the upper image of Fig. 10, a method of producing a heat dissipation substrate using a conventional technique may be a panel plating method, in which an Al2O3 oxide layer (20), a Ni thin film layer (30), and a Cu thin film layer (40) (the second layer of Fig. 10) are formed on an Al substrate (10) (the first layer of Fig. 10), and then a copper plating layer (the third layer of Fig. 10) is deposited. More specifically, the copper plating layer may be uniformly formed on all surfaces of the substrate regardless of the pattern shape to be formed on the surface.

[0202] Afterwards, a dry film (the fourth layer on the left and right in FIG. 10) is attached to the copper plating layer, and an etching process is performed to remove the copper plating layer in the area not masked by the dry film, thereby forming a pattern layer (50).

[0203] Meanwhile, it has been reported that the conventional technology has a problem in that, as shown in the lower image of Fig. 10, a portion of the Al2O3 oxide film layer (20) is also removed during the process of removing the copper plating layer by an etching process, thereby exposing the Al substrate (10). In this way, when the oxide film layer (Al2O3 oxide film layer (20)) of the Al substrate (10) is peeled off, the wear resistance, corrosion resistance, heat resistance, and insulation of the heat dissipation substrate may be reduced.

[0204]

[0205] On the other hand, the double-sided heat dissipation substrate (1) according to one embodiment of the present invention does not cause the above-described problem by not performing an etching process. Specifically, the present invention is a panel plating method, and does not form a copper plating layer on all surfaces of the substrate regardless of the pattern shape, but attaches a dry film (preferably a second dry film (70)) on an Al2O3 oxide film layer (20), a Ni thin film layer (30), and a Cu thin film layer (40), thereby forming a copper plating layer (pattern layer (50)) only in the pattern area (A).

[0206] That is, there is no need to perform an etching process to remove the copper plating layer in the area (B) that does not correspond to the pattern area of ​​the present invention, and accordingly, the Al2O3 oxide film layer (20) is removed by the etching process, thereby preventing the Al substrate (10) from being exposed to the outside.

[0207] As a result, the double-sided heat dissipation substrate (1) according to one embodiment of the present invention can have improved wear resistance, corrosion resistance, heat resistance, and insulation.

[0208]

[0209] Although the embodiments have been described with limited examples and drawings, those skilled in the art will appreciate that various modifications and variations can be made based on the above teachings. For example, appropriate results can be achieved even if the described techniques are performed in a different order than described, and / or components of the described systems, structures, devices, circuits, etc. are combined or combined in a different manner than described, or are replaced or substituted with other components or equivalents. Therefore, other implementations, other embodiments, and equivalents of the claims also fall within the scope of the claims described below.

Claims

1. A method for manufacturing a high heat dissipation, high functionality, and high integration heat dissipation substrate applied to LED lighting, An Al2O3 oxide layer forming step of forming an Al2O3 oxide layer on an Al substrate by anodizing the Al substrate; A first dry film attachment step of attaching a first dry film that masks an area not corresponding to a pattern to an Al substrate on which the Al2O3 oxide film layer is formed; A Ni thin film layer forming step of depositing a Ni thin film layer on an Al substrate to which the first dry film is attached; A Cu thin film layer deposition step of depositing a Cu thin film layer on an Al substrate on which the Ni thin film layer is deposited; A second dry film attachment step of attaching a second dry film that masks a narrower area than the area masked by the first dry film to the Al substrate on which the Cu thin film layer is deposited; A pattern layer forming step of performing wet electroplating to form a pattern layer in an area not masked by the second dry film; and A method for manufacturing a heat dissipation substrate, comprising a dry film peeling step of peeling the first dry film and the second dry film to remove the Ni thin film layer, the Cu thin film layer, and the pattern layer formed in an area that does not correspond to the pattern.

2. In claim 1, The method for manufacturing the above heat sink substrate is It further includes a via hole forming step of forming a plurality of via holes penetrating from one surface of the Al substrate to the other surface, which is performed before the Al2O3 oxide layer forming step; The above heat sink, For each of the two surfaces of the Al substrate, the first dry film attachment step, the Ni thin film layer formation step, the Cu thin film layer deposition step, the second dry film attachment step, the electrolytic copper plating step, and the dry film peeling step are performed in the same manner. A method for manufacturing a heat dissipation substrate, wherein the Ni thin film layer, the Cu thin film layer, and the pattern layer formed on each pattern area of ​​both surfaces of the Al substrate are connected through the inner circumferential surface of the via hole.

3. In claim 1, The Al substrate to which the first dry film is attached is The pattern area is exposed, The above Ni thin film layer formation step is, A Ni thin film layer is formed in the area masked and the area not masked by the first dry film, The Al substrate to which the second dry film is attached is A pattern area and an area extended by a predetermined offset from the pattern area are exposed, The above pattern layer is, A method for manufacturing a heat dissipation substrate, wherein the second dry film is formed in a pattern area that is not masked and in a portion of an area that does not correspond to a pattern.

Images