Substrate processing apparatus

Abstract

The present invention provides a substrate processing apparatus comprising: a process chamber in which process processing space is formed; a diffusion cover for providing a diffusion space for a process gas supplied to the process chamber; a shower head which is coupled to the diffusion cover and which sprays the process gas in the diffusion space; and a substrate support unit for lifting and lowering a substrate in the process chamber, wherein the diffusion cover includes: a guide member disposed in the vicinity of the shower head on the diffusion cover so as to diffuse the process gas from the center of the substrate to the outside; and a diffusion plate disposed on the guide member, and the guide member includes an inner slanted surface slanted downward so as to become gradually closer to the substrate from the outer periphery of the shower head, and the outer end part of the inner slanted surface is disposed farther outward than the outer periphery of the substrate.

Description

substrate processing device

[0001] The present invention relates to a substrate processing device, and more particularly, to a substrate processing device capable of providing a uniform deposition rate in the edge area of ​​a substrate as in the center area while reducing gas consumption by improving the structure of a guide member in a process processing space.

[0002] To deposit a thin film on a substrate, a thin film deposition method such as chemical vapor deposition (CVD) or atomic layer deposition (ALD) can be used. In the case of chemical vapor deposition or atomic layer deposition, a thin film can be formed by a process gas causing a chemical reaction on the surface of the substrate. In particular, in the case of atomic layer deposition, a thin film with a thickness similar to the diameter of an atom can be formed because a single layer of the process gas attached to the surface of the substrate forms a thin film.

[0003] To expand the processing temperature range, plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD) can be used. Because PECVD and PEALD can be processed at lower temperatures than chemical vapor deposition and ALD, the physical properties of the thin film can be improved.

[0004] However, in these conventional deposition processes, a problem is raised in that different deposition rates are observed in the central and edge regions of the substrate even though a sufficient amount of process gas is supplied.

[0005] The present invention is intended to solve such problems, and more specifically, to provide a substrate processing device capable of providing a uniform deposition rate in the edge area of ​​the substrate as in the center area while reducing gas consumption by improving the structure of the guide member.

[0006] The objects of the present invention are not limited to the objects mentioned above, and other objects not mentioned will be clearly understood by those skilled in the art from the description below.

[0007] In order to achieve the above object, the present invention provides a substrate processing device including: a process chamber having a process processing space formed therein; a diffusion cover providing a diffusion space for a process gas supplied to the process chamber; a showerhead coupled to the diffusion cover and spraying the process gas in the diffusion space; and a substrate support member for raising and lowering a substrate within the process chamber; wherein the diffusion cover includes a guide member disposed around the showerhead on the diffusion cover to diffuse the process gas from the center of the substrate toward the outside; and a diffusion plate disposed on the guide member, wherein the guide member includes an inner inclined surface that is inclined downward so as to gradually come closer to the substrate from the outside of the showerhead, and an outer end of the inner inclined surface is disposed outside the outside of the substrate.

[0008] The above guide member may include a flat portion extending outwardly parallel to the substrate or substrate support from an outer end of the inner inclined surface, and an outer inclined surface that is inclined upwardly from an outer end of the flat portion so as to gradually move away from the substrate support toward the outside.

[0009] The above-mentioned flat portion may be arranged to overlap at least a portion of a heater provided at the tip of the substrate or inside the substrate support portion.

[0010] The first inclination angle formed by the inner slope with respect to the substrate may be formed smaller than the second inclination angle formed by the outer slope with respect to the substrate.

[0011] The length of the above-mentioned flat portion may be formed to be longer than a first length from the outer edge of the substrate to the outer edge of the inner slope, a second length from the outer edge of the above-mentioned flat portion to the inner edge of an edge ring arranged in an edge region of the substrate support, or a third length from the inner edge of the above-mentioned edge ring to the outer edge of an edge slope formed in an outward direction.

[0012] The gap between the outer slope and the edge slope can be formed to be at least equal to or greater than the gap between the flat portion and the substrate or between the flat portion and the upper surface of the substrate support portion.

[0013] The gap between the outer slope and the edge slope can be formed to be constant or to become larger in the outward direction.

[0014] The second inclination angle may be formed to be at least equal to or smaller than a third inclination angle formed by an upwardly inclined surface at the outer edge of the outer slope surface and the lowermost edge of the diffusion cover with respect to the substrate.

[0015] The above showerhead can be formed to have a diameter smaller than the substrate.

[0016] The above guide member and the above diffusion plate can be formed integrally.

[0017] In addition, the present invention provides a substrate processing device including a process chamber having a process processing space for a substrate formed therein; and a diffusion cover arranged to cover an upper portion of the process chamber and providing a diffusion space for a supplied process gas; wherein the diffusion cover includes a first region having an inner slanted surface gradually slanted downward from an outer bottom surface of the showerhead to get closer to the substrate, a second region having a flat portion formed therein that extends outwardly parallel to the substrate from an outer end of the first region, and a third region having an outer slanted surface that is slanted upward outwardly from an outer end of the second region, wherein an outer end of the inner slanted surface is arranged outside the outer edge of the substrate.

[0018] Specific details of other embodiments are included in the detailed description and drawings.

[0019] According to the substrate processing device according to the embodiment of the present invention,

[0020] First, the deposition uniformity of the process gas can be improved by increasing the pressure and reducing the volume of the process gas between the showerhead and the substrate.

[0021] Second, the consumption of supplied gas is reduced, which minimizes the inflow of foreign substances.

[0022] Third, the shape of the guide member can be improved to increase the reaction time of the gas on the substrate.

[0023] Fourth, by improving the environment for exhausting the increased pressure in the diffusion space, the exhaust speed can be improved, thereby shortening the process time.

[0024] Fifth, by improving the diffusion plate and guide member to be integrated, the interface between them is omitted, preventing gas from penetrating between the interfaces while enhancing the thermal management characteristics.

[0025] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description of the claims.

[0026] The above summary, as well as the detailed description of preferred embodiments of the present application described below, will be better understood when read in conjunction with the accompanying drawings. For the purpose of illustrating the present invention, preferred embodiments are depicted in the drawings. However, it should be understood that the present application is not limited to the precise arrangements and means illustrated.

[0027] FIG. 1 is a perspective view illustrating a substrate processing device according to an embodiment of the present invention.

[0028] Fig. 2 is a cross-sectional view showing a state in which a substrate support part has moved to a process point in the substrate processing device shown in Fig. 1.

[0029] Fig. 3 is an exploded perspective view showing the substrate processing device shown in Fig. 1 in an exploded form.

[0030] Fig. 4 is a cross-sectional view showing a process chamber of the substrate processing device shown in Fig. 3.

[0031] Fig. 5 is an exploded perspective view showing a portion of the substrate processing device shown in Fig. 3 as viewed from below.

[0032] Figure 6 is a bottom view showing the bottom surface of the diffusion cover (200) shown in Figure 5.

[0033] Fig. 7 is a cross-sectional view showing a longitudinal section of the substrate processing device shown in Fig. 5.

[0034] Fig. 8 is a partially enlarged view showing the periphery of the diffusion space of the substrate processing device shown in Fig. 2.

[0035] Fig. 9 is a cross-sectional view showing an enlarged view of the central area of ​​the diffusion cover of the substrate processing device shown in Fig. 2.

[0036] FIG. 10 is a reference drawing showing another embodiment of a diffusion cover of the substrate processing device shown in FIG. 2.

[0037] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the attached drawings. The advantages and features of the present invention, and methods for achieving them, will become clear with reference to the embodiments described in detail below together with the attached drawings. However, the present invention is not limited to the embodiments disclosed below, but can be implemented in various different forms. These embodiments are provided only to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined only by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

[0038] The present invention can have various modifications and embodiments, and specific embodiments are illustrated and described in the drawings.

[0039] However, this is not intended to limit the present invention to a specific embodiment, but should be understood to include all modifications, equivalents, or substitutes included in the spirit and technical scope of the present invention.

[0040] Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by the terms.

[0041] The above terms are used solely to distinguish one component from another.

[0042] For example, without departing from the scope of the present invention, the second component may be referred to as the first component, and similarly, the first component may also be referred to as the second component.

[0043] The term and / or includes any combination of a plurality of related described items or any one of a plurality of related described items.

[0044] When it is said that a component is "connected" or "connected" to another component, it should be understood that it may be directly connected or connected to that other component, but there may also be other components in between.

[0045] On the other hand, when it is said that a component is "directly connected" or "directly connected" to another component, it should be understood that there are no other components in between.

[0046] The terminology used in this application is for the purpose of describing specific embodiments only and is not intended to limit the present invention.

[0047] Singular expressions include plural expressions unless the context clearly indicates otherwise.

[0048] In this application, terms such as “include” or “have” are intended to specify the presence of a feature, number, step, operation, component, part or combination thereof described in the specification, but should be understood not to exclude in advance the possibility of the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0049] Hereinafter, embodiments will be described in detail with reference to the attached drawings. Regardless of the drawing numbers, identical or corresponding components are given the same reference numbers, and redundant descriptions thereof will be omitted.

[0050] FIG. 1 is a perspective view illustrating a substrate processing device according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view illustrating a state in which a substrate support part has moved to a process point in the substrate processing device shown in FIG. 1.

[0051] Referring to FIGS. 1 and 2, a substrate processing device (10) according to an embodiment of the present invention is configured to include a process chamber (100), a diffusion cover (200), a substrate support unit (300), a driving unit (400), a showerhead (500), and a control unit (600).

[0052] The process chamber (100) provides a process processing space (S1) for processing a substrate (700). The process chamber (100) may provide an exhaust port (120) for discharging process gases or byproducts introduced into the interior to the outside.

[0053] For example, the exhaust ports (120) may be formed to be positioned on both sides of an imaginary horizontal line passing through the center of the process chamber (100) and connected downward through the side walls of the process chamber (100). These exhaust ports (120) may provide a transport path for exhaust gases and byproducts, etc., to be discharged. Accordingly, exhaust gases transferred downward from the inside of the process chamber (100) may be discharged to the outside of the process chamber (100) through the exhaust ports (120).

[0054] A substrate entrance (140) for entrance and exit of a substrate (700) may be formed on one side of the process chamber (100). The substrate (700) may be brought into or taken out of the process chamber (100) through the substrate entrance (140).

[0055] Although not shown in the drawing, the substrate entrance (140) may be equipped with a shutter (not shown). The shutter may selectively open or close the substrate entrance (140). When the shutter opens the substrate entrance (140), the substrate (700) may be loaded or unloaded through the substrate entrance (140). When a process is in progress on the substrate (700), the shutter may close the substrate entrance (140) to block the interior of the process chamber (100) from the exterior.

[0056] The diffusion cover (200) serves to seal the upper opening of the process chamber (100). For this purpose, the diffusion cover (200) may be placed on the upper portion of the process chamber (100). The diffusion cover (200) may be placed so as to be stacked on the upper portion of a showerhead (500) described below. As the diffusion cover (200) seals the upper opening of the process chamber (100), the outflow of process gas and the inflow of external substances through the upper opening of the process chamber (100) can be prevented.

[0057] The diffusion cover (200) may be provided with a guide member (210) provided around the showerhead (500) at the bottom, and a process gas inlet (220) arranged to penetrate the central region. In addition, the diffusion cover (200) may include a diffusion plate (205) arranged below the process gas inlet (220). The diffusion plate (205) may be arranged between the process gas inlet (220) and the showerhead (500). The lower surface of the diffusion plate (205) facing the showerhead (500) may have a stepped structure to form a diffusion space (S2) to be described later.

[0058] The guide member (210) may be provided in the form of a plate or ring to seal the upper opening of the process chamber (100). In addition, the guide member (210) may be coupled to the lower surface of the diffusion plate (205) to form a diffusion space (S2). The process gas inlet (220) may provide a transport path for the process gas. A process gas inlet pipe (230) may be connected to the inside of the process gas inlet (220).

[0059] The process gas inlet (220) is connected to the central region of the diffusion cover (200), and the process gas inlet pipe (230) can be connected to the process gas inlet (220). The process gas inlet pipe (230) can be directly or indirectly connected to a process gas tank (not shown). The process gas contained in the process gas tank is transported through the process gas inlet pipe (230), and the transported process gas can be delivered to the process treatment space (S1) through the process gas inlet (220).

[0060] The substrate support (300) can support the substrate (700). The substrate support (300) can have a mounting surface on the upper portion where the substrate (700) can be mounted. A process can be performed on the substrate (700) mounted on the mounting surface of the substrate support (300).

[0061] The substrate support (300) can heat the substrate (700). To this end, a heater (not shown) may be provided inside the substrate support (300). Heat emitted from the heater may be transferred to the substrate (700) through the body of the substrate support (300).

[0062] The substrate support (300) may include a grounded electrode (not shown). As described below, when RF power is supplied to the showerhead (500), an electric field may be formed between the showerhead (500) and the substrate support (300).

[0063] The substrate support member (300) may be provided with a plurality of support pins (not shown). The support pins may support the substrate (700). Specifically, the support pins may support the substrate (700) such that the substrate (700) is spaced apart from the mounting surface of the substrate support member (300) by a certain distance.

[0064] The driving unit (400) can generate a driving force to move the substrate support unit (300). In the present invention, the substrate support unit (300) can be moved in the vertical direction inside the process chamber (100) through the driving unit (400). Fig. 2 illustrates that the substrate support unit (300) is located in the process processing space (S1), which is the upper region of the process chamber (100).

[0065] Although not shown in the drawing, when the substrate (700) is brought into or taken out of the process chamber (100), the substrate support (300) may be placed on the bottom surface of the process chamber (100). In addition, when a process is performed on the substrate (700), the substrate support (300) may move to an upper point inside the process chamber (100) as shown in FIG. 2. Hereinafter, the position of the substrate support (300) where the process is performed on the substrate (700) is referred to as a process point.

[0066] When a process is performed on a substrate (700), it is preferable that the substrate (700) be seated on the mounting surface of the substrate support (300). As the substrate (700) is seated on the mounting surface of the substrate support (300), the process on the substrate (700) can be performed in a state where movement of the substrate (700) is prevented.

[0067] Meanwhile, when the substrate (700) is brought into or taken out of the process chamber (100), it is preferable that the substrate (700) be separated from the mounting surface of the substrate support member (300). The hand (not shown) of a transport robot (not shown) transporting the substrate (700) can support the lower side of the substrate (700) and transport the substrate (700). In order for the hand of the transport robot to approach the lower side of the substrate (700), the substrate (700) must be spaced apart from the mounting surface of the substrate support member (300) by a certain distance.

[0068] The showerhead (500) serves to spray process gas onto the substrate (700) in the process processing space. The showerhead (500) may be positioned in the central region of the guide member (210) and may receive process gas from the process gas inlet (220). The showerhead (500) may be positioned at the top of the process chamber (100). The process gas sprayed from the showerhead (500) is sprayed downward and reaches the substrate (700).

[0069] In the present invention, the process gas may include a source gas and a reaction gas. The source gas and the reaction gas may be sequentially injected. The source gas and the reaction gas may collide with each other and react after being injected from the showerhead (500). Then, the source gas activated by the reaction gas may contact the substrate (700) to perform a process treatment on the substrate (700). For example, the activated source gas may be deposited as a thin film on the substrate (700).

[0070] The showerhead (500) can be supplied with RF power. For example, an electrode plate (not shown) that receives RF power may be provided on the ceiling surface of the spray body (510). As described above, the substrate support (300) may include a grounded electrode. When RF power is supplied to the electrode plate, an electric field may be formed between the electrode plate and the electrode of the substrate support (300). The electric field formed by the supply of RF power converts the process gas introduced into the process chamber (100) into particles in a plasma state, and the plasma particles react with each other or with the surface of the substrate (700), so that a process treatment may be performed on the substrate (700).

[0071] The showerhead (500) may be equipped with a spray hole (see FIG. 3, 521) for spraying process gas. A plurality of spray holes (521) may be formed in a shape corresponding to one side of the substrate (700).

[0072] A diffusion space (S2) may be formed between the showerhead (500) and the inner center of the diffusion cover (200). In detail, the diffusion space (S2) may be formed between the diffusion plate (205) and the showerhead (500). The process gas introduced through the process gas inlet (220) may be diffused in the diffusion space (S2) and then injected through a plurality of injection holes (521).

[0073] An edge ring (330) may be formed on the substrate support (300). The edge ring (330) may be arranged in a ring shape along the edge of the substrate support (300). The edge ring (330) may be arranged to correspond to a chamber ring (110) provided inside the process processing space (S1). That is, the chamber ring (110) may be arranged to surround the outside of the edge ring (330) when the substrate support (300) is raised at the process point. At this time, process byproducts such as process gases and reaction gases that have completed a process on the substrate may be guided by the chamber ring (110) and moved to the exhaust port.

[0074] The control unit (600) can perform overall control of the substrate processing device (10). For example, the control unit (600) can control the shutter operation to open and close the substrate entrance (140), or control the drive unit (400) to move the substrate support unit (300). In addition, the control unit (600) can control the injection of process gas through the showerhead (500) or the supply of RF power to the electrode plate of the showerhead (500). At least some steps of the substrate processing method described below can be performed under the control of the control unit (600).

[0075] The substrate processing device (10) according to an embodiment of the present invention can deposit a thin film on a substrate (700). The substrate processing device (10) according to the embodiment can deposit a metal thin film on the substrate (700). The source gas according to the embodiment may use a precursor containing at least one element among elements such as silicon (Si), titanium (Ti), zirconium (Zr), aluminum (Al), titanium (Ti), tungsten (W), tantalum (Ta), ruthenium (Ru), molybdenum (Mo), etc. For example, the source gas may include at least one among titanium tetrachloride (TiCl4), silicon tetrachloride (SiCl4), tantalum bromide (TaBr5), etc. The reaction gas may use a precursor containing at least one element among hydrogen (H), oxygen (O), and nitrogen (N). For example, the reaction gas may include ammonia (NH3), hydrogen (H2), argon (Ar), etc. However, the embodiment is not limited thereto, and the source gas and reaction gas of the present invention are not limited thereto.

[0076] The process chamber (100) described above can provide a process processing space (S1) for depositing a thin film on a substrate (700). Inside the process chamber (100), a plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) method can be performed to deposit a thin film on the substrate (700). Since the deposition process using plasma can be processed at a relatively low temperature, the physical properties of the thin film can be improved.

[0077] Fig. 3 is an exploded perspective view showing the substrate processing device shown in Fig. 1 in an exploded state, and Fig. 4 is a cross-sectional view showing the process chamber of the substrate processing device shown in Fig. 3.

[0078] Referring to FIGS. 3 and 4, a substrate processing device according to an embodiment of the present invention may have a process processing space (S1) formed inside a process chamber (100), and exhaust ports formed in both lateral directions centered around the process processing space (S1). In this embodiment, two exhaust ports (120) are formed as an example, and the position or number of the exhaust ports is not limited thereto.

[0079] The exhaust ports (120) may be spaced apart from each other at equal intervals or equal angles on an imaginary horizontal line passing through the center of the process processing space (S1). The exhaust ports (120) may be formed horizontally so that the inlets (121) through which process byproducts such as process gases and reaction gases begin to flow in correspond to the process point height of the substrate support member (300), and the outlets (122) may be formed vertically on the bottom surface of the process chamber (100) so that the process byproducts are discharged to the lower part of the process chamber (100) while being delivered downward through the side wall. Of course, the exhaust ports (120) may also be designed so that both the inlets (121) and the outlets (122) are formed facing the same direction.

[0080] At this time, a ring-shaped buffer space (113) may be formed on the outside of the chamber ring (110) inside the process chamber (100). The buffer space (113) is an area where the process gas to be exhausted is collected, and may have the function of guiding the flow of the process gas to be exhausted toward the inlet (121) of each exhaust port (120). Of course, the buffer space (113) may completely guide the process gas inside the buffer space (113) toward the inlet while absorbing the process gas that is prevented from flowing to the inlet (121) of the exhaust port (120) due to the exhaust pressure of the process gas and is transmitted in a direction different from the inlet (121). The buffer space (113) has a predetermined height corresponding to the discharge direction of the process gas discharged between at least the guide member (210) and the edge ring (330), and may have a cross-section that is approximately in the shape of the letter “┒” so as to be able to wrap around the outer surface of the chamber ring (110) downward.

[0081] The process processing space (S1) may be formed with a horizontal cross-section that is circular and a vertical cross-section that is approximately rectangular, based on Fig. 2. Accordingly, the process processing space (S1) may be formed as a space having an overall cylindrical shape.

[0082] In addition, the substrate support member (300) and the edge ring (330) may also have a horizontal cross-section that is approximately circular in shape to correspond to the shape of the process processing space (S1). Of course, this shape may correspond to the horizontal cross-section shape of the substrate (700) supplied into the process chamber (100) through the substrate entrance (140).

[0083] In addition, the showerhead (500) is positioned to correspond to the central area of ​​the guide member (210), and it is preferable that the diameter of the showerhead (500) be formed smaller than the diameter of the upper surface of the substrate support member (300) or the diameter of the substrate (700) placed on the substrate support member (300). For example, the diameter of the substrate (700) relative to the showerhead (500) may be in the range of about 50 to 80%.

[0084] A guide member (210) is arranged to surround the periphery of the shower head (500), and as shown in FIG. 2, it is preferable that the diameter of the guide member (210) be formed to be at least smaller than the diameter of the edge ring (330).

[0085] Additionally, it is preferable that the diameter of the edge ring (330) be formed to be at least smaller than the diameter of the chamber ring (110).

[0086] At this time, the surfaces where the edge ring (330) and the chamber ring (110) come into contact with each other may be formed with a structure in which step-shaped patterns interlock with each other. Of course, a gap space (G) may be formed so that the surfaces where the edge ring (330) and the chamber ring (110) face each other are spaced apart from each other. The gap space (G) where they face each other may be formed to face each other with a pattern of a shape other than the step pattern. Since the purge gas is supplied from the lower part of the substrate support member (300) toward the upper process point in the gap space (G) where the edge ring (330) and the chamber ring (110) face each other in this way, the process gas can be prevented from flowing in the lower part of the substrate support member (300) through the gap space (G).

[0087] FIG. 5 is an exploded perspective view showing a state in which a part of the substrate processing device shown in FIG. 3 is viewed from below, FIG. 6 is a bottom view showing the bottom surface of the diffusion cover (200) shown in FIG. 5, and FIG. 7 is a cross-sectional view showing a longitudinal section of the substrate processing device shown in FIG. 5.

[0088] Referring to FIGS. 5 to 7, a substrate processing device (10) according to an embodiment of the present invention may include a center baffle (240) and a side nozzle (250) on the bottom surface of a diffusion cover (200).

[0089] A diffusion space (S2) may be formed in the inner central region of the diffusion cover (200), and a center baffle (240) may be arranged on the bottom surface of the diffusion space (S2). A plurality of injection holes (241) may be formed in the center baffle (240) through which process gas may be injected in the direction of the showerhead (500).

[0090] A first diffusion space (see Fig. 9, S21) can be formed in the upper region of the center bevel (240) at the inner center of the diffusion cover (200).

[0091] The first diffusion space (S21) can inject the process gas concentratedly into the central area of ​​the showerhead (500) as the process gas supplied to the process gas inlet (220) flows in and passes through the injection hole (241) of the center baffle (240).

[0092] Additionally, a second diffusion space (see FIG. 9, S22) may be formed in the area between the center baffle (240) and the showerhead (500). The process gas injected from the center baffle (240) and the process gas injected from the side nozzle (250) may be simultaneously supplied to the second diffusion space (S22).

[0093] Accordingly, the process gas injected from the center baffle (240) and the process gas injected from the side nozzle (250) can be injected together while being diffused in the second diffusion space (S22) in the showerhead (500). That is, since the process gas is injected intensively toward the central region of the showerhead (500), the process gas that has passed through the injection hole (501) of the showerhead (500) can also be injected relatively concentratedly in the central region of the showerhead.

[0094] In addition, a plurality of side nozzles (250) may be arranged around the diffusion space (S2) at the center inside the diffusion cover (200). The side nozzles (250) may receive process gas to each of the plurality of side nozzles (250) through a distribution line (not shown). The side nozzles (250) may be formed to be recessed from the front of the diffusion cover (200), and a valve (251) may be provided at the center of each side nozzle (250) to control the opening and closing of the side nozzle (250) or the degree of opening. Each side nozzle (250) may be arranged at equal intervals or equal angles with respect to the diffusion space (S2) or the center baffle (240). The areas where the process gas is sprayed from the side nozzles (250) and the center baffle (240) may partially overlap in adjacent areas.

[0095] In addition, the guide member (210) is arranged to surround the periphery of the showerhead (500) so that the process gas passing through the showerhead (500) can be guided to rapidly diffuse from the center of the substrate (700) to the edge region. At this time, a process processing space (S1) is formed in the region between the showerhead (500) and the guide member (210) facing the substrate (700).

[0096] The diffusion cover (200) may include a first region (A1) formed with an inner slope (211) that slopes downward from the bottom tip of the showerhead (500) toward the outside, a second region (212) formed with a flat portion (212) adjacent to the first region (A1), and a third region (A3) formed with an outer slope (213) that slopes upward from the second region (212) toward the outside. Of course, the first region (A1) to the third region (A3) may all integrally form the guide member (210). In detail, the guide member (210) may include a first region (A1) in which an inner slope (211) is formed that slopes downward from the bottom tip of the shower head (500) toward the outside, a second region (212) formed of a flat portion (212) adjacent to the first region (A1), and a third region (A3) in which an outer slope (213) is formed that slopes upward from the second region (212) toward the outside. Of course, the first region (A1) to the third region (A3) may all integrally form the guide member (210).

[0097] The inner tip of the first region (A1) may be positioned to partially overlap with the showerhead (500), and the overlapping region may be an area where the showerhead (500) is coupled to the guide member (210).

[0098] The inner slope (211) of the first region (A1) may be positioned to face the outer region of the substrate (700) except for the central region of the substrate facing the showerhead (500). Accordingly, the substrate (700) may be positioned within the region including the showerhead (500) and the inner slope (211).

[0099] And, the process gas sprayed from the showerhead (500) increases in pressure as it reaches the central area of ​​the substrate, and this pressure can quickly diffuse the process gas into the inclined space between the first area (A1) and the substrate (700) in the process processing space (S1).

[0100] Accordingly, since the volume of the process processing space (S1) can be reduced due to the inner slope (211) of the first region (A1), there is an advantage in that the consumption of the supplied process gas can be reduced. In addition, as the consumption of the process gas is reduced, the effect of reducing the inflow of foreign substances that may be included therein can also be accompanied. Of course, as the supply pressure of the process gas increases, the process gas can move horizontally at a high speed within the process processing space (S1), and the effect of smoothly supplying atoms deep into the element pattern of the substrate through high pressure and rapid flow can also be expected.

[0101] Here, the process processing space (S1) can correspond to the process point.

[0102] Fig. 8 is a partially enlarged view showing the periphery of the diffusion space of the substrate processing device shown in Fig. 2.

[0103] Figure 8 shows the shape, length, angle, position, arrangement relationship, etc. of the guide member (210) between the substrate support member (300) and the diffusion cover (200).

[0104] Referring to Fig. 8, the guide member (210) may be positioned such that the outer end of the inner slope (211) is positioned outside the outer edge of the substrate (700). That is, the entire area of ​​the substrate (700) may be positioned within the first area (A1) where the inner slope (211) is formed.

[0105] Through this structure, the process gas injected from the showerhead (500) in the process processing space (S1) is first injected quickly at high pressure into the central region of the substrate, and then the inner inclined surface (211) guides the flow of the process gas in a horizontal direction toward the outer periphery, and as the inner inclined surface (211) is arranged to gradually get closer to the substrate toward the outer periphery, the process gas can be provided to provide uniform gas distribution and pressure while covering the entire region of the substrate (700) not only for the central region of the substrate (700) but also for the outer region.

[0106] For example, the inner slope (211) may also function as a reflector that reflects the flow direction of the process gas toward the substrate while narrowing the gap with the substrate as the process gas sprayed from the showerhead (500) flows horizontally. In addition, the diameter of the outer edge of the inner slope (211) may be formed to be large, in the range of about 5 to 20% of the diameter of the substrate (700).

[0107] In addition, the outer slope (213) may be formed to have an upward slope, unlike the downward slope of the inner slope (211). At this time, the gap between the outer slope (213) and the edge slope (331) formed on the inner upper portion of the edge ring (330) may be maintained constant, or the gap may be formed to widen further toward the outer direction. For example, the angle formed by the outer slope (213) with the substrate (700) may be the same as the angle formed by the slope (331) of the edge ring with the substrate (700), or may be formed to be relatively large.

[0108] At this time, the first gap (G1) between the outer slope (213) and the edge ring (330) may be formed relatively large compared to the second gap (G2) between the flat portion (212) and the upper surface of the substrate support portion (300). When the first gap (G1) is formed large compared to the second gap (G2), the pressure of the process gas passing through the second gap (G2) inside the process processing space (S1) increases, and when it passes through the first gap (G1), the pressure decreases but the flow rate may increase, so that the exhaust can be smoothly performed toward the exhaust port.

[0109] Of course, since the first inclination angle (θ1) formed by the inner slope (211) with respect to the substrate (700) is formed smaller than the second inclination angle (θ2) formed by the outer slope (213) with respect to the substrate (700), the first inclination angle (θ1) can induce a relatively gentle volume change, thereby providing an advantage of minimizing the formation of vortices. This advantage can facilitate the flow of process gas toward the exhaust port (120) and contribute to providing a uniform exhaust pressure.

[0110] For example, the second inclination angle (θ2) may be formed to be approximately 3 to 12 times larger than the first inclination angle (θ1). In detail, it may be preferable for the second inclination angle (θ2) to be formed to be approximately 5 to 10 times larger than the first inclination angle (θ1) for the above-described effect.

[0111] In FIG. 8, “L1” represents a first length from the outer edge of the substrate (700) to the outer edge of the inner slope (211), “L2” represents a second length from the outer edge of the flat portion (212) to the inner edge of the edge ring (330), and “L3” represents a third length from the inner edge of the edge ring (330) to the outer edge of the edge slope (331). In addition, “D1” represents a fourth length, which is the length between the outer edge of the inner slope (211) and the inner edge of the outer slope (213). Here, the fourth length represents the horizontal length of the flat portion (212).

[0112] At this time, it is preferable that the fourth length (D1) be formed longer than each of the first length (L1) to the third length (L3). Here, if the fourth length (D1) is too short, the stagnation time of the process gas decreases, and if it is too long, the stagnation time of the process gas increases. That is, if the stagnation time of the process gas is outside the set range and is not appropriate, in a deposition process using a showerhead (500) smaller than the substrate (700), the stagnation time of the process gas may be insufficient or stagnant in the edge area of ​​the substrate (700), which may deteriorate the uniformity of the thin film deposition thickness. Therefore, it is preferable that the range of the fourth length (D1) be formed longer than each of the first length (L1) to the third length (L3).

[0113] For example, the fourth length (D1) can be formed to be equal to or greater than the sum of the second length (L2) and the third length (L3).

[0114] And, the upwardly inclined slope (201) at the outermost outer edge of the diffusion cover (200) at the outer edge of the outer slope (213) may be formed at a third inclined angle (θ3) with respect to the substrate (700). At this time, the second inclined angle (θ2) formed by the outer slope (213) may be formed to be at least equal to or smaller than the third inclined angle (θ3). That is, by forming the third inclined angle (θ3) to be equal to or larger than the second inclined angle (θ2), smoother exhaust characteristics can be provided.

[0115] FIG. 10 is a reference drawing showing another embodiment of a diffusion cover of the substrate processing device shown in FIG. 2.

[0116] Referring to FIG. 10, in another embodiment of the diffusion cover of the substrate processing device, the above-described guide member (210, see FIG. 2) and the diffusion plate (205, see FIG. 2) may be applied as a diffusion plate (206) having a structure in which they are integrally combined.

[0117] In this way, when an integrated diffusion plate (206) is applied, the bottom surface of the diffusion plate (206) can have an inner slope that slopes downward toward the outer surface so as to gradually get closer to the substrate (700) from the outer surface of the showerhead (500). Of course, the outer end of the inner slope (211) of the diffusion plate (206) can be positioned outside the substrate (700).

[0118] Accordingly, since the inner slope (211) is integrally formed with the diffusion plate (206), the interface between the guide member (210) and the diffusion plate (205) of the above-described embodiment can be omitted, thereby preventing gas from penetrating between the interfaces, and thus having the effect of preventing the generation and accumulation of particles.

[0119] In addition, since the diffusion plate (206) is configured as an integral part, the thermal management characteristics can be enhanced compared to the structure of the above-described embodiment in which it is separated into two parts. That is, although a deviation in thermal conduction occurred in the separated configuration, since the diffusion plate (206) is configured as an integral part, there is an advantage in that the temperature of the configuration can be effectively managed with heat conducted from the configuration such as the heater, and furthermore, the effect of ease of maintenance can be expected as the number of parts is reduced.

[0120] Therefore, according to the substrate processing device according to an embodiment of the present invention, the deposition uniformity of the process gas can be improved by increasing the pressure of the process gas between the showerhead and the substrate and reducing the volume, the consumption of the supplied gas can be reduced, thereby minimizing the inflow of foreign substances, the reaction time of the gas on the substrate can be increased by improving the shape of the guide member, and the exhaust speed can be improved by improving the environment for exhausting the increased pressure in the diffusion space, thereby shortening the process time, and when the diffusion plate and the guide member are improved to be integrated, the interface between them is omitted, thereby preventing gas from penetrating between the interfaces and enhancing the thermal management characteristics.

[0121] While specific embodiments have been illustrated and described above to illustrate the technical concepts of the present invention, the present invention is not limited to the configuration and operation of the specific embodiments described above, and various modifications may be implemented without departing from the scope of the present invention. Therefore, such modifications should be considered within the scope of the present invention, and the scope of the present invention should be determined by the claims set forth below.

Claims

1. A process chamber with a process processing space formed inside; A diffusion cover providing a diffusion space for the process gas supplied to the above process chamber; A showerhead coupled to the diffusion cover and spraying process gas into the diffusion space; A substrate support member for raising and lowering a substrate within the process chamber; The above diffusion cover, A guide member arranged around the showerhead on the diffusion cover to diffuse the process gas from the center of the substrate to the outside; and Including a diffusion plate placed on the above guide member, A substrate processing device, wherein the guide member includes an inner inclined surface that is inclined downward from the outer edge of the shower head so as to gradually get closer to the substrate, and an outer end of the inner inclined surface is positioned outside the outer edge of the substrate.

2. In paragraph 1, The above guide member, A flat portion extending outward from the outer end of the inner slope in parallel with the substrate or substrate support portion, A substrate processing device comprising an outer inclined surface that is inclined upwardly so as to gradually move away from the substrate support portion from the outer end of the flat portion toward the outside.

3. In paragraph 2, The above flat surface is, A substrate processing device arranged so as to overlap at least a portion of a heater provided at the tip of the substrate or inside the substrate support.

4. In paragraph 2, A substrate processing device, wherein the first inclination angle formed by the inner slope with respect to the substrate is formed smaller than the second inclination angle formed by the outer slope with respect to the substrate.

5. In paragraph 2, The length of the above plane is A substrate processing device formed to be longer than a first length from the outer edge of the substrate to the outer edge of the inner slope, or a second length from the outer edge of the flat portion to the inner edge of an edge ring arranged in an edge region of the substrate support, or a third length from the inner edge of the edge ring to the outer edge of an edge slope formed in an outward direction.

6. In paragraph 5, A substrate processing device, wherein the gap between the outer slope and the edge slope is formed at least equal to or larger than the gap between the flat surface and the substrate or between the flat surface and the upper surface of the substrate support.

7. In paragraph 5, A substrate processing device, wherein the gap between the outer slope and the edge slope is formed to be constant or to become larger in the outward direction.

8. In paragraph 4, The above second slope angle is, A substrate processing device, wherein an upwardly inclined surface is formed at the outer edge of the outer inclined surface and the lowermost edge of the diffusion cover at a third inclined angle formed with respect to the substrate, and is at least equal to or less than the third inclined angle.

9. In paragraph 1, A substrate processing device wherein the above showerhead is formed to have a diameter smaller than the substrate.

10. In paragraph 1, A substrate processing device in which the above guide member and the above diffusion plate are formed integrally.

11. A process chamber having a process processing space for the substrate formed inside; and A diffusion cover is disposed to cover the upper portion of the process chamber and provides a diffusion space for the supplied process gas; The diffusion cover includes a first region formed with an inner slope that slopes downwardly from the outer bottom surface of the showerhead to gradually get closer to the substrate, a second region formed with a flat portion that extends outwardly parallel to the substrate from the outer end of the first region, and a third region formed with an outer slope that slopes upwardly from the outer end of the second region toward the outside. A substrate processing device, wherein the outer end of the inner slope is positioned outside the outer periphery of the substrate.

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