Filter device, antenna device, and antenna module

Abstract

A filter device (100) comprises: an insulator (10) that includes a first external electrode (11) and a second external electrode (12); an inductor (L1) that is connected to the first external electrode; and a resonant circuit (RS) that includes an inductor (L2) and a capacitor (C1). The inductor (L1) is connected to the second external electrode (12) and is connected to the resonant circuit (RS). The inductor (L1) and the inductor (L2) are laminated in the insulator (10). At least one of the inductor (L1) and the inductor (L2) includes a plurality of inductor patterns. The inductor (L1) and the inductor (L2) are disposed alternately in the lamination direction and are magnetically coupled.

Description

FILTER DEVICE, ANTENNA DEVICE, AND ANTENNA MODULE

[0001] The present disclosure relates to a filter device, an antenna device, and an antenna module.

[0002] Conventionally, filter devices that pass high-frequency signals in a specific first frequency band while attenuating high-frequency signals in a specific second frequency band have been known. For example, International Publication No. 2023 / 080009 (Patent Document 1) discloses a filter device having a pass band in a first frequency band and an attenuation band in a second frequency band lower than the first frequency band.

[0003] International Publication No. 2023 / 080009

[0004] The filter device disclosed in WO 2023 / 080009 includes a first inductor and a resonant circuit including a second inductor and a capacitor connected to the first inductor. By forming a parallel resonator using the mutual inductance generated when the first inductor and the second inductor are magnetically coupled, high-frequency signals in the second frequency band can be attenuated by parallel resonance and high-frequency signals in the first frequency band can be passed by series resonance.

[0005] In the filter device described above, there is a demand for greater attenuation of high frequency signals by parallel resonance while also achieving miniaturization.

[0006] The present disclosure has been made to solve such problems, and an object of the present disclosure is to provide a filter device that is small and can obtain good attenuation and pass characteristics.

[0007] A filter device according to an aspect of the present disclosure includes an insulator including a first external electrode and a second external electrode, a first inductor connected to the first external electrode, and a resonant circuit including a second inductor and a capacitor. The first inductor is connected to the second external electrode and also to the resonant circuit. The first inductor and the second inductor are stacked within the insulator. At least one of the first inductor and the second inductor includes multiple inductor patterns. The first inductor and the second inductor are alternately arranged in the stacking direction and are magnetically coupled.

[0008] An antenna device according to another aspect of the present disclosure includes a radiating element that radiates a high-frequency signal in a first frequency band as radio waves, a power feed circuit that supplies the high-frequency signal in the first frequency band to the radiating element, and the above-mentioned filter device provided between the radiating element and the power feed circuit.

[0009] According to another aspect of the present disclosure, there is provided an antenna module including a first antenna device that emits a high-frequency signal in a first frequency band as a radio wave, and a second antenna device that emits a high-frequency signal in a second frequency band as a radio wave. The first antenna device is the antenna device described above.

[0010] According to the filter device of the present disclosure, high-frequency signals can be attenuated by parallel resonance by utilizing the mutual inductance that appears in the path between the first inductor and the second external electrode due to magnetic coupling between the first inductor and the second inductor. Furthermore, in the filter device, at least one of the first inductor and the second inductor includes multiple inductor patterns, and the first inductors and the second inductors are magnetically coupled by being alternately arranged in the stacking direction. This makes it possible to increase the coupling coefficient between the first inductor and the second inductor while achieving a small size, and to significantly attenuate high-frequency signals by parallel resonance. As a result, the present disclosure can provide a filter device that is small and has good attenuation and pass characteristics.

[0011] 1 is a diagram illustrating a configuration of an antenna device according to a first embodiment. FIG. 2 is a graph illustrating frequency characteristics of reactance of a filter device according to the first embodiment. FIG. 3 is a diagram illustrating a configuration of an antenna module according to the first embodiment. FIG. 4 is a basic circuit diagram of a filter device according to the first embodiment. FIG. 5 is a detailed circuit diagram of a filter device according to the first embodiment. FIG. 6 is an external view of a filter device according to the first embodiment. FIG. 7 is a perspective view illustrating a layered structure of a filter device according to the first embodiment. FIG. 8 is an exploded plan view illustrating the layered structure of a filter device according to the first embodiment. FIG. 9 is an exploded plan view illustrating the layered structure of a filter device according to the first embodiment. FIG. 10 is an exploded plan view illustrating the layered structure of a filter device according to the first embodiment. FIG. 11 is a detailed circuit diagram illustrating parasitic capacitance generated in the filter device according to the first embodiment. FIG. 12 is a detailed circuit diagram illustrating parasitic capacitance generated in the filter device according to the first embodiment. FIG. 13 is a graph illustrating an example of insertion loss of a filter device according to the first embodiment. FIG. 14 is a detailed circuit diagram of a filter device according to a second embodiment. FIG. 15 is a perspective view illustrating the layered structure of a filter device according to the second embodiment. FIG. 16 is an exploded plan view illustrating the layered structure of a filter device according to the second embodiment. FIG. 17 is an exploded plan view illustrating the layered structure of a filter device according to the second embodiment. 10 is a graph showing an example of insertion loss of a filter device according to a second embodiment.

[0012] Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals, and description thereof will not be repeated.

[0013] First Embodiment A filter device 100 according to a first embodiment will be described with reference to FIGS.

[0014] 1 is a diagram showing the configuration of an antenna device 1 according to embodiment 1. The antenna device 1 can be mounted on a communication device capable of transmitting and receiving radio waves, such as a mobile phone, a smartphone, a tablet terminal, or a smartwatch, or a personal computer (PC) with a communication function.

[0015] As shown in FIG. 1 , antenna device 1 is an example of a "first antenna device" and includes a feed circuit RF1, a radiating element 50, and a filter device 100. The feed circuit RF1 supplies a high-frequency signal in a specific first frequency band to the radiating element 50. In the first embodiment, the first frequency band is referred to as the f1 band. The radiating element 50 is, for example, a monopole antenna, and radiates the high-frequency signal in the f1 band supplied from the feed circuit RF1 into the air as radio waves. Note that the radiating element 50 is not limited to a monopole antenna, and may be a dipole antenna, an inverted-F antenna, a loop antenna, or the like.

[0016] The filter device 100 is disposed between the radiating element 50 and the feed circuit RF1. The filter device 100 is configured to attenuate high-frequency signals in a second frequency band while passing high-frequency signals in a first frequency band (f1 band). In the first embodiment, the second frequency band is referred to as the f2 band. The f2 band is a frequency band lower than the first frequency band (f1 band) and close to the f1 band. For example, if the f1 band is the 5 GHz band (5.15-5.85 GHz) used by Wi-Fi (registered trademark), the f2 band is n79 (4.4-5.0 GHz). Such a filter device 100 is particularly useful when the antenna device 1 is used near an antenna that transmits and receives radio waves in the f2 band.

[0017] Fig. 2 is a graph illustrating the frequency characteristics of the reactance of the filter device 100 according to the first embodiment. In Fig. 2, the frequency characteristics of the reactance of the filter device 100 are shown in a graph with frequency on the horizontal axis and reactance on the vertical axis. As shown in Fig. 2, in the filter device 100, the attenuation band due to parallel resonance is the f2 band, and the pass band due to series resonance is the f1 band.

[0018] 3 is a diagram showing the configuration of the antenna module 3 according to embodiment 1. The antenna module 3 can be mounted on a communication device capable of transmitting and receiving radio waves, such as a mobile phone, a smartphone, a tablet terminal, or a smart watch, or a PC with a communication function.

[0019] As shown in Fig. 3, the antenna module 3 includes the antenna device 1 according to the first embodiment described above and an antenna device 2. The antenna device 2 is an example of a "second antenna device" and includes a feed circuit RF2 and a radiating element 60. The feed circuit RF2 supplies a high-frequency signal in a specific second frequency band (f2 band) to the radiating element 60. The radiating element 60 is, for example, a monopole antenna, and radiates the high-frequency signal in the f2 band supplied from the feed circuit RF2 into the air as radio waves. Note that the radiating element 60 is not limited to a monopole antenna, and may also be a dipole antenna, an inverted-F antenna, a loop antenna, or the like.

[0020] The radiating element 60 is provided on the same substrate 70 as the radiating element 50 of the antenna device 1. In the example of Fig. 3, the radiating elements 50 and 60 are provided on the same substrate 70, but they may be provided on different substrates as long as they are provided within the same antenna module 3.

[0021] The high-frequency signal in the f2 band radiated from the antenna device 2 is absorbed by the antenna device 1 located near the antenna device 2, resulting in a deterioration in the radiation efficiency of the antenna device 2. For this reason, the filter device 100 is configured to attenuate the high-frequency signal in the f2 band radiated from the antenna device 2. That is, the filter device 100 is configured to pass the high-frequency signal in the f1 band supplied from the feed circuit RF1 to the radiating element 50, while not passing the high-frequency signal in the f2 band radiated from the antenna device 2, thereby suppressing deterioration in the radiation efficiency of the antenna device 2. This makes it possible to place multiple antennas close to each other and reduce the size of the antenna module while suppressing deterioration in antenna characteristics.

[0022] [Configuration of Filter Device] The filter device 100 according to the first embodiment will be described in detail with reference to Figures 4 to 14. Figure 4 is a basic circuit diagram of the filter device 100 according to the first embodiment. The filter device 100 is a trap filter that attenuates high-frequency signals in a specific frequency band (f2 band) by preventing their passage, and may also be a band-elimination filter.

[0023] 4, the filter device 100 includes a first terminal P1, a second terminal P2, an inductor L1, and a resonant circuit RS including the inductor L2 and a capacitor C1. The filter device 100 can be connected to a transmission line on the feed circuit RF1 side via the first terminal P1. The filter device 100 can be connected to a transmission line on the radiating element 50 side via the second terminal P2.

[0024] When a radio frequency signal supplied from the feed circuit RF1 is supplied to the radiating element 50 via the filter device 100, the first terminal P1 becomes an input terminal and the second terminal P2 becomes an output terminal. When a radio frequency signal received by the radiating element 50 is supplied to a circuit on the feed circuit RF1 side via the filter device 100, the first terminal P1 becomes an output terminal and the second terminal P2 becomes an input terminal. Here, an example has been shown in which the feed circuit RF1 is connected to the first terminal P1 and the radiating element 50 is connected to the second terminal P2, but it is also possible to connect the radiating element 50 to the first terminal P1 and the feed circuit RF1 to the second terminal P2. Either connection will produce the same effect.

[0025] The inductor L1 is an example of a "first inductor." The inductor L2 is an example of a "second inductor." One end of the inductor L1 is connected to the first terminal P1. The other end of the inductor L1 is connected to the second terminal P2 via the second path TL2, which is a short-circuit path, and is also connected to the second terminal P2 via the resonant circuit RS provided in the first path TL1. In this way, the first path TL1 and the second path TL2 are connected in parallel between the inductor L1 and the second terminal P2, the resonant circuit RS is provided in the first path TL1, and the second path TL2 is short-circuited.

[0026] The resonant circuit RS is configured as a series resonator by connecting an inductor L2 and a capacitor C1 in series between the inductor L1 and the second terminal P2.

[0027] Between the first terminal P1 and the second terminal P2, the inductors L1 and L2 are connected in series and magnetically coupled to each other. This generates a mutual inductance M between the inductors L1 and L2. The generated mutual inductance M generates a mutual inductance in each of the first path TL1 and the second path TL2, forming a parallel resonator. The polarity relationship between the inductors L1 and L2 may be either depolarizing or additive. When the inductors L1 and L2 are magnetically coupled with each other in a depolarizing manner (hereinafter also referred to as "depolarizing coupling"), a magnetic field is generated in a direction in which the magnetic fluxes passing through the inductors L1 and L2 weaken each other, thereby achieving magnetic coupling. When the inductors L1 and L2 are magnetically coupled with each other in an additive manner (hereinafter also referred to as "additive coupling"), a magnetic field is generated in a direction in which the magnetic fluxes passing through the inductors L1 and L2 strengthen each other, thereby achieving magnetic coupling.

[0028] For example, when a current flows from the first terminal P1 to the inductor L1, if the direction of the current flowing to the inductor pattern of the inductor L1 is the same as the direction of the current flowing to the inductor pattern of the inductor L2 when a current flows from the inductor L1 to the inductor L2, the inductors L1 and L2 are additively coupled. When the inductors L1 and L2 are additively coupled, a mutual inductance +M occurs in the first path TL1, and a mutual inductance -M occurs in the second path TL2.

[0029] On the other hand, when the direction of the current flowing into the inductor pattern of inductor L1 when a current flows from the first terminal P1 to inductor L1 differs from the direction of the current flowing into the inductor pattern of inductor L2 when a current flows from inductor L1 to inductor L2, inductors L1 and L2 are depolarly coupled. When inductors L1 and L2 are depolarly coupled, a mutual inductance −M occurs in the first path TL1, and a mutual inductance +M occurs in the second path TL2.

[0030] The series resonant frequency f0 of the resonant circuit RS is expressed as f0 = 1 / 2π√(L2 × C1). At the series resonant frequency f0, the combined reactance X of the inductor L2 and the capacitor C1 becomes 0 (zero) (X = 0). At such a series resonant frequency f0, the filter device 100 functions as a parallel resonator with mutual inductance +M and mutual inductance -M. The resonant frequency of such a parallel resonator coincides with the series resonant frequency f0 of the resonant circuit RS, and becomes the parallel resonant frequency in the attenuation band (f2 band) of the filter device 100.

[0031] In the filter device 100 according to the first embodiment, a designer can design the parallel resonant frequency of the attenuation band simply by determining the values ​​of the inductor L2 and the capacitor C1 that constitute the resonant circuit RS. In this way, the filter device 100 has a configuration that is extremely advantageous in terms of structural design.

[0032] Furthermore, by changing the coupling coefficient k between the inductors L1 and L2, the designer can change the series resonance frequency of the pass band (f1 band) and bring the pass band (f1 band) due to series resonance closer to the attenuation band (f2 band) due to parallel resonance. In other words, the designer can configure the filter device 100 having a narrow band in which the attenuation characteristics change sharply near the parallel resonance frequency of the attenuation band (f2 band).

[0033] The coupling coefficient k between the inductors L1 and L2 also affects the amount and width of attenuation of high-frequency signals in the attenuation band (f2 band). The larger the coupling coefficient k, the larger the mutual inductance that occurs, so the high-frequency signals are attenuated more sharply in the attenuation band (f2 band), resulting in good attenuation characteristics.

[0034] To increase the coupling coefficient k, it is possible to increase the inductance of inductor L1 or inductor L2 or to move inductor L1 closer to inductor L2 to increase the magnetic flux generated in each of inductors L1 and L2. However, since inductor L1 affects the pass characteristics of high-frequency signals in the pass band (f1 band), it is preferable to minimize the inductance of inductor L1 in order to obtain good pass characteristics without attenuating high-frequency signals in the pass band (f1 band). Furthermore, increasing the number of turns of inductor L2 or increasing the opening area of ​​inductor L2 to increase the inductance of inductor L2 would increase the overall size of the filter device 100, making it difficult to miniaturize the filter device 100. Therefore, it is difficult to increase the inductance of inductor L1 or inductor L2 while miniaturizing the filter device 100.

[0035] Furthermore, when the inductors L1 and L2 are placed close to each other, a parasitic capacitance may occur between the inductors L1 and L2. Such a parasitic capacitance may cause self-resonance in the inductor L1 or the inductor L2, making it difficult to obtain good pass characteristics.

[0036] Therefore, as will be described below, the filter device 100 according to the first embodiment is configured to obtain good attenuation and pass characteristics by attenuating high-frequency signals to a greater extent through parallel resonance while achieving miniaturization.

[0037] FIG. 5 is a detailed circuit diagram of the filter device 100 according to the first embodiment. As shown in FIG. 5, the filter device 100 includes a plurality of inductors as the inductor L1. For example, the inductor L1 includes inductors L1a and L1b connected in parallel between the first terminal P1 and the resonant circuit RS. The inductors L1a and L1b are an example of a "first sub-inductor." The filter device 100 includes a plurality of inductors as the inductor L2. For example, the inductor L2 includes inductors L2a and L2b connected in series between the inductor L1 and the second terminal P2. The inductors L2a and L2b are an example of a "second sub-inductor."

[0038] One end of each of the parallel-connected inductors L1a and L1b is connected to the first terminal P1, and the other end of each of the inductors L1a and L1b is connected to the inductor L2a. Of the series-connected inductors L2a and L2b, the inductor L2a is connected to the inductors L1a and L1b, and the inductor L2b is connected to the capacitor C1. That is, the inductors L1a and L1b and the inductor L2a are connected in series at the same potential. In the example of FIG. 5, the inductors L1 and L2 are depolarized coupled, generating a coupling coefficient k.

[0039] Fig. 6 is an external view of a filter device 100 according to the first embodiment. The filter device 100 is formed, for example, as an integrated chip component, and includes an inductor and a capacitor disposed within an insulator 10 (housing) in which multiple dielectric layers are stacked. In Fig. 6, the longitudinal direction of the filter device 100 (insulator 10) is designated the X direction, the lateral direction is designated the Y direction, and the height direction is designated the Z direction, with the stacking direction of the dielectric layers corresponding to the Z direction. The bottom surface (X-Y plane) of the filter device 100 is the mounting surface that is placed on a mounting substrate, and when the filter device 100 is mounted on the mounting substrate, the bottom surface faces the mounting substrate.

[0040] 6, the filter device 100 includes a first external electrode 11 and a second external electrode 12 that are electrically connected to an inductor pattern or an electrode pattern provided inside the insulator 10. The first external electrode 11 corresponds to the first terminal P1 described above. The second external electrode 12 corresponds to the second terminal P2 described above.

[0041] The first external electrode 11 has a U-shape and includes an external electrode 11a provided on the bottom surface (X-Y plane) of the insulator 10, an external electrode 11b provided on one side surface (X-Z plane) of the insulator 10, and an external electrode 11c provided on the other side surface (X-Z plane) of the insulator 10. The external electrode 11b faces the external electrode 11c, and the ends of the external electrodes 11b and 11c are connected to the ends of the external electrode 11a.

[0042] The second external electrode 12 is disposed at a predetermined distance from the first external electrode 11 along the longitudinal direction (X direction) of the filter device 100 (insulator 10). The second external electrode 12 has a U-shape and includes an external electrode 12a provided on the bottom surface (X-Y plane) of the insulator 10, an external electrode 12b provided on one side surface (X-Z plane) of the insulator 10, and an external electrode 12c provided on the other side surface (X-Z plane) of the insulator 10. The external electrode 12b faces the external electrode 12c, and the ends of the external electrodes 12b and 12c are connected to the ends of the external electrode 12a.

[0043] Fig. 7 is a perspective view showing the layered structure of the filter device 100 according to the first embodiment. Note that in Fig. 7, the outline of the insulator 10 is omitted to make it easier to understand the filter device 100. Figs. 8 to 10 are exploded plan views showing the layered structure of the filter device 100 according to the first embodiment.

[0044] 7 to 10, the filter device 100 is formed by stacking a plurality of dielectric layers Ly1 to Ly13 in the stacking direction (Z direction) through a lamination process. Each of the dielectric layers Ly1 to Ly13 is a ceramic green sheet, and each electrode pattern and each inductor pattern are formed by printing a conductive paste (for example, Ni paste) on each of the dielectric layers Ly1 to Ly13 through a screen printing method.

[0045] The capacitor C1 is composed of electrode patterns r1 to r3 formed on the dielectric layers Ly1 to Ly3, respectively.

[0046] An electrode pattern r1 that constitutes a part of the capacitor C1 is formed on the dielectric layer Ly1. One end of the electrode pattern r1 is electrically connected to the second terminal P2 (the outer electrode 12b of the second outer electrode 12). The other end of the electrode pattern r1 is electrically connected to the second terminal P2 (the outer electrode 12c of the second outer electrode 12).

[0047] An electrode pattern r2 that constitutes a part of the capacitor C1 is formed on the dielectric layer Ly2. The electrode pattern r2 is electrically connected to neither the first terminal P1 nor the second terminal P2, and is also not electrically connected to any other electrode patterns.

[0048] An electrode pattern r3 that forms part of the capacitor C1 is formed on the dielectric layer Ly3. The electrode pattern r3 is electrically connected to an end of the inductor pattern r4 on the dielectric layer Ly4 through a via conductor.

[0049] In this way, the capacitor C1 is constructed by utilizing the space formed between the electrode pattern r1 formed on the dielectric layer Ly1 and the electrode pattern r2 formed on the dielectric layer Ly2, and the space formed between the electrode pattern r2 formed on the dielectric layer Ly2 and the electrode pattern r3 formed on the dielectric layer Ly3.

[0050] The inductor L2b is composed of inductor patterns r4 and r5 formed on the dielectric layers Ly4 and Ly5, respectively.

[0051] An inductor pattern r4 constituting a part of the inductor L2b is formed on the dielectric layer Ly4. The inductor pattern r4 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly4 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r4 is electrically connected to the electrode pattern r3 on the dielectric layer Ly3 via a via conductor. The other end of the inductor pattern r4 is electrically connected to a mid-path portion of the inductor pattern r5 on the dielectric layer Ly5 via a via conductor. The mid-path portion of the inductor pattern r4 is electrically connected to an end of the inductor pattern r5 on the dielectric layer Ly5 via a via conductor.

[0052] An inductor pattern r5 constituting a part of the inductor L2b is formed on the dielectric layer Ly5. The inductor pattern r5 is wound around the lamination direction as a winding axis, and is formed on the dielectric layer Ly5 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r5 is electrically connected to a mid-path portion of the inductor pattern r4 on the dielectric layer Ly4 via a via conductor. The other end of the inductor pattern r5 is electrically connected to the inductor pattern r6 on the dielectric layer Ly6 via a via conductor. The mid-path portion of the inductor pattern r5 is electrically connected to an end of the inductor pattern r4 on the dielectric layer Ly4 via a via conductor.

[0053] In this way, in the inductor L2b, when the insulator 10 is viewed from the stacking direction, the inductor pattern r4 of the dielectric layer Ly4 and the inductor pattern r5 of the dielectric layer Ly5 are each configured to have a winding shape wound around the stacking direction as the winding axis.

[0054] The inductor L2a is composed of inductor patterns r6, r8, and r10 formed on the dielectric layers Ly6 to Ly8, respectively. The inductor L1b is composed of inductor patterns r7 and r9 formed on the dielectric layers Ly6 and Ly7, respectively.

[0055] An inductor pattern r6 constituting a part of the inductor L2a is formed on the dielectric layer Ly6. The inductor pattern r6 is electrically connected to an end of the inductor pattern r5 on the dielectric layer Ly5 through a via conductor. Furthermore, the inductor pattern r6 is electrically connected to an end of the inductor pattern r8 on the dielectric layer Ly7 through a via conductor.

[0056] Furthermore, an inductor pattern r7 constituting a part of the inductor L1b is formed on the dielectric layer Ly6. The inductor pattern r7 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly6 so as to make approximately one full turn counterclockwise in the figure. One end of the inductor pattern r7 is electrically connected to the second terminal P2 (the external electrode 12c of the second external electrode 12). The other end of the inductor pattern r7 is electrically connected to a mid-path portion of the inductor pattern r9 on the dielectric layer Ly7 via a via conductor. The mid-path portion of the inductor pattern r7 is electrically connected to an end of the inductor pattern r9 on the dielectric layer Ly7 via a via conductor.

[0057] An inductor pattern r8 constituting a part of the inductor L2a is formed on the dielectric layer Ly7. One end of the inductor pattern r8 is electrically connected to the inductor pattern r6 on the dielectric layer Ly6 through a via conductor. Furthermore, the other end of the inductor pattern r8 is electrically connected to an end of the inductor pattern r10 on the dielectric layer Ly8 through a via conductor.

[0058] Furthermore, an inductor pattern r9 constituting a part of the inductor L1b is formed on the dielectric layer Ly7. The inductor pattern r9 is wound around the lamination direction as a winding axis, and is formed on the dielectric layer Ly7 so as to make approximately one full turn counterclockwise in the figure. One end of the inductor pattern r9 is electrically connected to a mid-path portion of the inductor pattern r7 on the dielectric layer Ly6 via a via conductor. The other end of the inductor pattern r9 is electrically connected to the first terminal P1 (the external electrode 11c of the first external electrode 11). The mid-path portion of the inductor pattern r9 is electrically connected to an end of the inductor pattern r7 on the dielectric layer Ly6 via a via conductor.

[0059] In this way, in the inductor L1b, when the insulator 10 is viewed from the stacking direction, the inductor pattern r7 of the dielectric layer Ly6 and the inductor pattern r9 of the dielectric layer Ly7 are each configured to have a winding shape wound around the stacking direction as the winding axis.

[0060] An inductor pattern r10 constituting a part of the inductor L2a is formed on the dielectric layer Ly8. The inductor pattern r10 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly8 so as to make approximately one full turn clockwise in the drawing. One end of the inductor pattern r10 is electrically connected to an end of the inductor pattern r8 on the dielectric layer Ly7 via a via conductor. The other end of the inductor pattern r10 is electrically connected to the second terminal P2 (the external electrode 12c of the second external electrode 12).

[0061] In this way, in the inductor L2a, when the insulator 10 is viewed from the stacking direction, the inductor pattern r10 of the dielectric layer Ly8 is configured to have a winding shape wound around the stacking direction as the winding axis.

[0062] The inductor L1a is composed of inductor patterns r11 and r12 formed on the dielectric layers Ly9 and Ly10, respectively.

[0063] An inductor pattern r11 constituting a part of the inductor L1a is formed on the dielectric layer Ly9. The inductor pattern r11 is wound around the lamination direction as a winding axis, and is formed on the dielectric layer Ly9 so as to make approximately one full turn counterclockwise in the figure. One end of the inductor pattern r11 is electrically connected to the second terminal P2 (the external electrode 12c of the second external electrode 12). The other end of the inductor pattern r11 is electrically connected to a mid-path portion of the inductor pattern r12 on the dielectric layer Ly10 via a via conductor. The mid-path portion of the inductor pattern r11 is electrically connected to an end of the inductor pattern r12 on the dielectric layer Ly10 via a via conductor.

[0064] An inductor pattern r12 constituting a part of the inductor L1a is formed on the dielectric layer Ly10. The inductor pattern r12 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly10 so as to make approximately one full turn counterclockwise in the figure. One end of the inductor pattern r12 is electrically connected to a mid-path portion of the inductor pattern r11 on the dielectric layer Ly9 via a via conductor. The other end of the inductor pattern r12 is electrically connected to the first terminal P1 (the external electrode 11c of the first external electrode 11). The mid-path portion of the inductor pattern r12 is electrically connected to an end of the inductor pattern r11 on the dielectric layer Ly9 via a via conductor.

[0065] In this way, in the inductor L1a, when the insulator 10 is viewed from the stacking direction, the inductor pattern r11 of the dielectric layer Ly9 and the inductor pattern r12 of the dielectric layer Ly10 are each configured to have a winding shape wound around the stacking direction as the winding axis.

[0066] Furthermore, one end of the inductor pattern r7 of the dielectric layer Ly6 that constitutes part of the inductor L1b, one end of the inductor pattern r10 of the dielectric layer Ly8 that constitutes part of the inductor L2a, and one end of the inductor pattern r11 of the dielectric layer Ly9 that constitutes part of the inductor L1a are electrically connected via the first terminal P1 (the external electrode 11c of the first external electrode 11). In this way, the inductor L1a, the inductor L1b, and the inductor L2a are connected at the same potential.

[0067] An electrode pattern r13 is formed on the dielectric layer Ly11. One end of the electrode pattern r13 is electrically connected to the second terminal P2 (external electrode 12b of the second external electrode 12), and the other end of the electrode pattern r13 is electrically connected to the second terminal P2 (external electrode 12c of the second external electrode 12). A mid-path portion of the electrode pattern r13 is electrically connected to the electrode pattern r15 on the dielectric layer Ly12 through a via conductor.

[0068] Furthermore, an electrode pattern r14 is formed on the dielectric layer Ly11. One end of the electrode pattern r14 is electrically connected to the first terminal P1 (the external electrode 11b of the first external electrode 11), and the other end of the electrode pattern r14 is electrically connected to the first terminal P1 (the external electrode 11c of the first external electrode 11). A mid-path portion of the electrode pattern r14 is electrically connected to the electrode pattern r16 of the dielectric layer Ly12 through a via conductor.

[0069] An electrode pattern r15 is formed on the dielectric layer Ly12. The electrode pattern r15 is electrically connected to a mid-path portion of the electrode pattern r13 on the dielectric layer Ly11 through a via conductor. The electrode pattern r15 is also electrically connected to an electrode pattern r17 on the dielectric layer Ly13 through a via conductor.

[0070] Furthermore, an electrode pattern r16 is formed on the dielectric layer Ly12. The electrode pattern r16 is electrically connected to a mid-path portion of the electrode pattern r14 on the dielectric layer Ly11 through a via conductor. The electrode pattern r16 is also electrically connected to an electrode pattern r18 on the dielectric layer Ly13 through a via conductor.

[0071] An electrode pattern r17 is formed on the dielectric layer Ly13. The electrode pattern r17 is electrically connected to the electrode pattern r15 on the dielectric layer Ly12 through a via conductor. The electrode pattern r17 is also electrically connected to the second terminal P2 (the external electrode 12a of the second external electrode 12) through the via conductor.

[0072] Furthermore, an electrode pattern r18 is formed on the dielectric layer Ly13. The electrode pattern r18 is electrically connected to the electrode pattern r16 on the dielectric layer Ly12 through a via conductor. The electrode pattern r18 is also electrically connected to the first terminal P1 (the external electrode 11a of the first external electrode 11) through a via conductor.

[0073] In the filter device 100 configured as described above, the inductors L1a, L1b, L2a, and L2b are arranged to face each other in the stacking direction, and at least a portion of the openings of the inductors L1a and L1b overlap with the openings of the inductors L2a and L2b when the insulator 10 is viewed in the stacking direction. The larger the area where the openings of the inductors L1a and L1b overlap with the openings of the inductors L2a and L2b, the larger the coupling coefficient k between the inductors L1 (inductors L1a and L1b) and the inductors L2 (inductors L2a and L2b), and the larger the mutual inductance due to magnetic coupling.

[0074] Furthermore, in the filter device 100, the inductors L1 and L2 are arranged alternately in the stacking direction and are magnetically coupled. Specifically, as shown in Figures 7 to 9, the inductors L1a and L1b included in the inductor L1 and the inductors L2a and L2b included in the inductor L2 are arranged alternately in the stacking direction.

[0075] For example, in the filter device 100, from the bottom surface on which the external electrodes 11a and 12a are provided toward the top surface, inductor patterns r11 and r12 constituting the inductor L1a (inductor L1), inductor pattern r10 constituting the inductor L2a (inductor L2), inductor patterns r7 and r9 constituting the inductor L1b (inductor L1), and inductor patterns r4 and r5 constituting the inductor L2b (inductor L2) are arranged in this order along the stacking direction.

[0076] In other words, the inductor pattern r10 constituting the inductor L2a (inductor L2) is arranged so as to be sandwiched in the stacking direction between the inductor patterns r11 and r12 constituting the inductor L1a (inductor L1) and the inductor patterns r7 and r9 constituting the inductor L1b (inductor L1). Also, the inductor patterns r7 and r9 constituting the inductor L1b (inductor L1) are arranged so as to be sandwiched in the stacking direction between the inductor pattern r10 constituting the inductor L2a (inductor L2) and the inductor patterns r4 and r5 constituting the inductor L2b (inductor L2).

[0077] According to the filter device 100 configured as described above, the coupling coefficient k between the inductor L1 (inductors L1a, L1b) and the inductor L2 (inductors L2a, L2b) can be increased by arranging the multiple inductors L1a, L1b constituting the inductor L1 and the multiple inductors L2a, L2b constituting the inductor L2 close to each other without increasing the number of turns of the inductor L2 or the opening area of ​​the inductor L2. As a result, the filter device 100 can attenuate high-frequency signals more significantly through parallel resonance while being miniaturized, thereby achieving good attenuation and pass characteristics.

[0078] Next, the parasitic capacitance that occurs between inductor L1 and inductor L2 when inductor L1 and inductor L2 are placed close to each other will be described with reference to Figures 11 to 13. Figures 11 to 13 are detailed circuit diagrams for explaining the parasitic capacitance that occurs in filter device 100 according to embodiment 1. Note that Figure 13 shows a circuit diagram that has been modified from the circuit diagram shown in Figure 12 for easier viewing.

[0079] 11, when the inductors L1a and L2a are close to each other, a parasitic capacitance Cp may be generated between the inductors L1a and L2a. Also, when the inductors L1b and L2a are close to each other, a parasitic capacitance Cp may be generated between the inductors L1a and L2a.

[0080] However, inductor L1a and inductor L1b are each connected in series with inductor L2a at the same potential, and the second path TL2 (short-circuit path) is connected in parallel to the parasitic capacitance Cp. Therefore, the presence of the second path TL2 (short-circuit path) makes the filter device 100 less susceptible to the influence of the parasitic capacitance Cp. In this way, the filter device 100 can ignore the parasitic capacitance Cp between inductor L1a and inductor L2a.

[0081] 12 and 13, the proximity of inductor L1a and inductor L2b may cause a parasitic capacitance Cp between inductor L1a and inductor L2b. Note that since inductors L1b and L2a are provided between inductors L1a and L2b, the proximity between inductor L1a and inductor L2b is not high, but some parasitic capacitance Cp may still occur. Furthermore, the proximity of inductor L1b and inductor L2b may cause a parasitic capacitance Cp between inductor L1b and inductor L2b.

[0082] However, the above-described parasitic capacitance Cp is connected in parallel with the capacitor C1 of the resonant circuit RS. Therefore, in the filter device 100, the parasitic capacitance Cp can be used in place of the capacitor C1, or the parasitic capacitance Cp can be used as part of the capacitor C1. In this way, the filter device 100 can utilize the parasitic capacitance Cp between the inductors L1a and L2b and the parasitic capacitance Cp between the inductors L1b and L2b as the capacitor C1, thereby enabling the capacitor C1 to be miniaturized. As a result, as shown in FIGS. 7 to 10 , in the limited space within the laminate 10, when the insulator 10 is viewed from the stacking direction, the designer can arrange the electrode patterns constituting the capacitor C1 so as to avoid the openings of the inductors L1a, L1b, L2a, and L2b. This minimizes the effect of the capacitor C1 on the inductors L1a, L1b, L2a, and L2b.

[0083] In this way, the filter device 100 can avoid self-resonance in inductor L1 or inductor L2 due to the parasitic capacitance that occurs when inductor L1 and inductor L2 are placed close to each other, thereby achieving good pass characteristics.

[0084] Fig. 14 is a graph showing an example of the insertion loss of the filter device 100 according to embodiment 1. In Fig. 14, the frequency characteristics of the insertion loss of the filter device 100 are shown in a graph with frequency on the horizontal axis and insertion loss on the vertical axis.

[0085] As shown in FIG. 14, the filter device 100 can sharply and significantly attenuate high-frequency signals in the attenuation band through parallel resonance, and can pass high-frequency signals in the pass band with minimal attenuation through series resonance.

[0086] As described above, the filter device 100 can achieve good attenuation and pass characteristics while being miniaturized.

[0087] 15 to 20, a filter device 200 according to a second embodiment will be described. Only the parts of the filter device 200 according to the second embodiment that are different from the filter device 100 according to the first embodiment will be described below.

[0088] 15 is a detailed circuit diagram of a filter device 200 according to embodiment 2. In the filter device 100 according to embodiment 1, the number of inductors included in inductor L1 (inductors L1a, L1b) is the same as the number of inductors included in inductor L2 (inductors L2a, L2b), but in the filter device 200 according to embodiment 2, the number of inductors included in inductor L2 is greater than the number of inductors included in inductor L1.

[0089] Furthermore, the filter device 200 according to the second embodiment is not limited to a configuration in which the inductors included in the inductor L1 and the inductors included in the inductor L2 are alternately stacked one by one, but also includes a configuration in which the inductors included in the inductor L1 and the inductors included in the inductor L2 are alternately stacked in groups of multiple.

[0090] 15, the filter device 200 includes, as the inductor L1, inductors L1a and L1b connected in parallel between the first terminal P1 and the resonant circuit RS, and, as the inductor L2, inductors L2a, L2b, and L2c connected in series between the inductor L1 and the second terminal P2. Inductors L1a and L1b are examples of "first sub-inductors," and inductors L2a, L2b, and L2c are examples of "second sub-inductors."

[0091] Of the inductors L2a, L2b, and L2c connected in series, inductor L2a is connected to inductors L1a and L1b, and inductor L2c is connected to capacitor C1. In the example of Fig. 15, inductors L1 and L2 are additively coupled, generating a coupling coefficient k. Note that inductors L1 and L2 may also be depolarly coupled.

[0092] Fig. 16 is a perspective view showing the layered structure of filter device 200 according to embodiment 2. Note that in Fig. 16, the outline of insulator 10 is omitted to make it easier to understand filter device 200. Figs. 17 to 19 are exploded plan views showing the layered structure of filter device 200 according to embodiment 2.

[0093] 16 to 19, the filter device 200 is formed by stacking a plurality of dielectric layers Ly21 to Ly33 in the stacking direction (Z direction) through a lamination process. Each of the dielectric layers Ly21 to Ly33 is a ceramic green sheet, and each electrode pattern and each inductor pattern are formed by printing a conductive paste (for example, Ni paste) on each of the dielectric layers Ly21 to Ly33 through a screen printing method.

[0094] The inductor L2a is composed of inductor patterns r21, r22, r24, and r26 formed on the dielectric layers Ly21 to Ly24, respectively. The inductor L1b is composed of inductor patterns r23 and r25 formed on the dielectric layers Ly22 and Ly23, respectively.

[0095] An inductor pattern r21 constituting a part of the inductor L2a is formed on the dielectric layer Ly21. The inductor pattern r21 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly21 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r21 is electrically connected to the inductor pattern r22 on the dielectric layer Ly22 through a via conductor. The other end of the inductor pattern r21 is electrically connected to the second terminal P2 (the external electrode 12c of the second external electrode 12).

[0096] An inductor pattern r22 constituting a part of the inductor L2a is formed on the dielectric layer Ly22. The inductor pattern r22 is electrically connected to an end of the inductor pattern r21 on the dielectric layer Ly21 through a via conductor. Furthermore, the inductor pattern r22 is electrically connected to an inductor pattern r24 on the dielectric layer Ly23 through a via conductor.

[0097] Furthermore, an inductor pattern r23 constituting a part of the inductor L1b is formed on the dielectric layer Ly22. The inductor pattern r23 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly22 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r23 is electrically connected to a mid-path portion of the inductor pattern r25 on the dielectric layer Ly23 via a via conductor. The other end of the inductor pattern r23 is electrically connected to the first terminal P1 (the external electrode 11b of the first external electrode 11). The mid-path portion of the inductor pattern r23 is electrically connected to an end of the inductor pattern r25 on the dielectric layer Ly23 via a via conductor.

[0098] An inductor pattern r24 constituting a part of the inductor L2a is formed on the dielectric layer Ly23. The inductor pattern r24 is electrically connected to the inductor pattern r22 on the dielectric layer Ly22 through a via conductor. Furthermore, the inductor pattern r24 is electrically connected to an end of the inductor pattern r26 on the dielectric layer Ly24 through a via conductor.

[0099] Furthermore, an inductor pattern r25 constituting a part of the inductor L1b is formed on the dielectric layer Ly23. The inductor pattern r25 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly23 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r25 is electrically connected to the second terminal P2 (the external electrode 12b of the second external electrode 12). The other end of the inductor pattern r25 is electrically connected to a mid-path portion of the inductor pattern r23 on the dielectric layer Ly22 via a via conductor. The mid-path portion of the inductor pattern r25 is electrically connected to an end of the inductor pattern r23 on the dielectric layer Ly22 via a via conductor.

[0100] An inductor pattern r26 constituting a part of the inductor L2a is formed on the dielectric layer Ly24. The inductor pattern r26 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly24 so as to make approximately half a turn clockwise in the figure. One end of the inductor pattern r26 is electrically connected to an end of the inductor pattern r27 on the dielectric layer Ly25 via a via conductor. The other end of the inductor pattern r26 is electrically connected to the inductor pattern r24 on the dielectric layer Ly23 via a via conductor.

[0101] In this way, in inductor L2a, when the insulator 10 is viewed from the stacking direction, the inductor pattern r21 of the dielectric layer Ly21 and the inductor pattern r26 of the dielectric layer Ly24 are each configured to have a winding shape wound around the stacking direction as a winding axis. Also, in inductor L1b, when the insulator 10 is viewed from the stacking direction, the inductor pattern r23 of the dielectric layer Ly22 and the inductor pattern r25 of the dielectric layer Ly23 are each configured to have a winding shape wound around the stacking direction as a winding axis.

[0102] The inductor L2b is composed of inductor patterns r27 and r28 formed on the dielectric layers Ly25 and Ly26, respectively.

[0103] An inductor pattern r27 constituting a part of the inductor L2b is formed on the dielectric layer Ly25. The inductor pattern r27 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly25 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r27 is electrically connected to an end of the inductor pattern r28 on the dielectric layer Ly26 via a via conductor. The other end of the inductor pattern r27 is electrically connected to an end of the inductor pattern r26 on the dielectric layer Ly24 via a via conductor.

[0104] An inductor pattern r28 constituting a part of the inductor L2b is formed on the dielectric layer Ly26. The inductor pattern r28 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly26 so as to make approximately half a turn clockwise in the figure. One end of the inductor pattern r28 is electrically connected to an end of the inductor pattern r27 on the dielectric layer Ly25 via a via conductor. The other end of the inductor pattern r28 is electrically connected to an inductor pattern r29 on the dielectric layer Ly27 via a via conductor.

[0105] In this way, in inductor L2b, when the insulator 10 is viewed from the stacking direction, the inductor pattern r27 of the dielectric layer Ly25 and the inductor pattern r28 of the dielectric layer Ly26 are each configured to have a winding shape wound around the stacking direction as the winding axis.

[0106] The inductor L1a is composed of inductor patterns r30 and r32 formed on dielectric layers Ly27 and Ly28, respectively.

[0107] An inductor pattern r29 constituting a part of the inductor L2b is formed on the dielectric layer Ly27. One end of the inductor pattern r29 is electrically connected to an end of the inductor pattern r28 on the dielectric layer Ly26 through a via conductor. The other end of the inductor pattern r29 is electrically connected to an end of the inductor pattern r31 on the dielectric layer Ly28 through a via conductor.

[0108] Furthermore, an inductor pattern r30 constituting a part of the inductor L1a is formed on the dielectric layer Ly27. The inductor pattern r30 is wound around the stacking direction as the winding axis, and is formed on the dielectric layer Ly27 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r30 is electrically connected to a mid-path portion of the inductor pattern r32 on the dielectric layer Ly28 via a via conductor. The other end of the inductor pattern r30 is electrically connected to the first terminal P1 (the external electrode 11b of the first external electrode 11). The mid-path portion of the inductor pattern r30 is electrically connected to an end of the inductor pattern r32 on the dielectric layer Ly28 via a via conductor.

[0109] An inductor pattern r31 constituting a part of the inductor L2c is formed on the dielectric layer Ly28. One end of the inductor pattern r31 is electrically connected to an end of the inductor pattern r29 on the dielectric layer Ly27 through a via conductor. The other end of the inductor pattern r31 is electrically connected to an end of the inductor pattern r33 on the dielectric layer Ly29 through a via conductor.

[0110] Furthermore, an inductor pattern r32 constituting a part of the inductor L1a is formed on the dielectric layer Ly28. The inductor pattern r32 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly28 so as to make approximately one full turn clockwise in the figure. One end of the inductor pattern r32 is electrically connected to the second terminal P2 (the external electrode 12b of the second external electrode 12). The other end of the inductor pattern r32 is electrically connected to a mid-path portion of the inductor pattern r30 on the dielectric layer Ly27 via a via conductor. The mid-path portion of the inductor pattern r32 is electrically connected to an end of the inductor pattern r30 on the dielectric layer Ly27 via a via conductor.

[0111] In this way, in the inductor L1a, when the insulator 10 is viewed from the stacking direction, the inductor pattern r30 of the dielectric layer Ly27 and the inductor pattern r32 of the dielectric layer Ly28 are each configured to have a winding shape wound around the stacking direction as the winding axis.

[0112] The inductor L2c is configured by an inductor pattern r33 formed on the dielectric layer Ly29.

[0113] An inductor pattern r33 constituting the inductor L2c is formed on the dielectric layer Ly29. The inductor pattern r33 is wound around the stacking direction as a winding axis, and is formed on the dielectric layer Ly29 so as to make approximately one full turn clockwise in the drawing. One end of the inductor pattern r33 is electrically connected to the inductor pattern r34 on the dielectric layer Ly30 via a via conductor. The other end of the inductor pattern r33 is electrically connected to the inductor pattern r31 on the dielectric layer Ly28 via a via conductor.

[0114] In this way, in the inductor L2c, when the insulator 10 is viewed from the stacking direction, the inductor pattern r33 of the dielectric layer Ly29 is configured to have a winding shape wound around the stacking direction as the winding axis.

[0115] The capacitor C1 is composed of electrode patterns r34 and r35 formed on the dielectric layers Ly30 and Ly31, respectively.

[0116] An electrode pattern r34 that constitutes a part of the capacitor C1 is formed on the dielectric layer Ly30. The electrode pattern r34 is electrically connected to an end of the inductor pattern r33 on the dielectric layer Ly29 through a via conductor.

[0117] An electrode pattern r35 that constitutes a part of the capacitor C1 is formed on the dielectric layer Ly31. One end of the electrode pattern r35 is electrically connected to the second terminal P2 (the external electrode 12b of the second external electrode 12). The other end of the electrode pattern r35 is electrically connected to the second terminal P2 (the external electrode 12c of the second external electrode 12). A mid-path portion of the inductor pattern r35 is electrically connected to the electrode pattern r37 of the dielectric layer Ly32 through a via conductor.

[0118] Furthermore, an electrode pattern r36 is formed on the dielectric layer Ly31. One end of the electrode pattern r36 is electrically connected to the first terminal P1 (the external electrode 11b of the first external electrode 11). The other end of the electrode pattern r36 is electrically connected to the first terminal P1 (the external electrode 11c of the first external electrode 11). A mid-path portion of the inductor pattern r36 is electrically connected to the electrode pattern r38 of the dielectric layer Ly32 through a via conductor.

[0119] In this way, the capacitor C1 is configured by utilizing the space formed between the electrode pattern r34 formed on the dielectric layer Ly30 and the electrode pattern r35 formed on the dielectric layer Ly31.

[0120] An electrode pattern r37 is formed on the dielectric layer Ly32. The electrode pattern r37 is electrically connected to a mid-path portion of the electrode pattern r35 on the dielectric layer Ly31 through a via conductor. The electrode pattern r37 is also electrically connected to an electrode pattern r39 on the dielectric layer Ly33 through a via conductor.

[0121] Furthermore, an electrode pattern r38 is formed on the dielectric layer Ly32. The electrode pattern r38 is electrically connected to a mid-path portion of the electrode pattern r36 on the dielectric layer Ly31 through a via conductor. The electrode pattern r38 is also electrically connected to an electrode pattern r40 on the dielectric layer Ly33 through a via conductor.

[0122] An electrode pattern r39 is formed on the dielectric layer Ly33. The electrode pattern r39 is electrically connected to the electrode pattern r37 on the dielectric layer Ly32 through a via conductor. The electrode pattern r39 is also electrically connected to the second terminal P2 (the external electrode 12a of the second external electrode 12) through the via conductor.

[0123] Furthermore, an electrode pattern r40 is formed on the dielectric layer Ly33. The electrode pattern r40 is electrically connected to the electrode pattern r38 on the dielectric layer Ly32 through a via conductor. The electrode pattern r40 is also electrically connected to the first terminal P1 (the external electrode 11a of the first external electrode 11) through a via conductor.

[0124] In the filter device 200 configured as described above, the inductors L1a, L1b, L2a, L2b, and L2c are arranged to face each other in the stacking direction, and at least a portion of the openings of the inductors L1a and L1b overlap with the openings of the inductors L2a, L2b, and L2c, respectively, when the insulator 10 is viewed in the stacking direction. The larger the area where the openings of the inductors L1a and L1b overlap with the openings of the inductors L2a, L2b, and L2c, the larger the coupling coefficient k between the inductors L1 (inductors L1a and L1b) and the inductors L2 (inductors L2a, L2b, and L2c), and the larger the mutual inductance due to magnetic coupling.

[0125] Furthermore, in the filter device 200, the inductors L1 and L2 are arranged alternately in the stacking direction and are magnetically coupled. Specifically, as shown in Figures 16 to 19, the inductors L1a and L1b included in the inductor L1 and the inductors L2a, L2b, and L2c included in the inductor L2 are arranged alternately in the stacking direction.

[0126] For example, in the filter device 200, from the bottom surface on which the external electrodes 11a and 12a are provided toward the top surface, the following are arranged in order along the stacking direction: inductor pattern r33 constituting inductor L2c (inductor L2), inductor patterns r30 and r32 constituting inductor L1a (inductor L1), inductor patterns r27 and r28 constituting inductor L2b (inductor L2), inductor pattern r26 constituting inductor L2a (inductor L2), inductor patterns r23 and r25 constituting inductor L1b (inductor L1), and inductor pattern r21 constituting inductor L2a (inductor L2).

[0127] In other words, the inductor patterns r23 and r25 constituting the inductor L1b (inductor L1) are arranged so as to be sandwiched in the stacking direction between the inductor pattern r21 constituting the inductor L2a (inductor L2) and the inductor pattern r26 constituting the inductor L2a (inductor L2). The inductor pattern r26 constituting the inductor L2a (inductor L2) and the inductor patterns r27 and r28 constituting the inductor L2b (inductor L2) are arranged so as to be sandwiched in the stacking direction between the inductor patterns r23 and r25 constituting the inductor L1b (inductor L1) and the inductor patterns r30 and r32 constituting the inductor L1a (inductor L1). Furthermore, the inductor patterns r30 and r32 constituting the inductor L1a (inductor L1) are arranged so as to be sandwiched between the inductor patterns r27 and r28 constituting the inductor L2b (inductor L2) and the inductor pattern r33 constituting the inductor L2c (inductor L2).

[0128] Thus, in the filter device 200, the number of inductors included in the inductor L2 is greater than the number of inductors included in the inductor L1. Furthermore, in the filter device 200, the multiple inductors L2 (inductors L2a, L2b) are arranged so as to be sandwiched between the two inductors L1 (inductors L1b, L1a) in the stacking direction.

[0129] According to the filter device 200 configured as described above, the coupling coefficient k between the inductor L1 (inductors L1a and L1b) and the inductor L2 (inductors L2a, L2b, and L2c) can be increased by arranging the multiple inductors L1a and L1b constituting the inductor L1 and the multiple inductors L2a, L2b, and L2c constituting the inductor L2 close to each other without increasing the number of turns of the inductor L2 or the opening area of ​​the inductor L2. As a result, the filter device 200 can attenuate high-frequency signals more significantly through parallel resonance while being miniaturized, thereby achieving good attenuation and pass characteristics.

[0130] Furthermore, similar to the filter device 100 according to the first embodiment, the filter device 200 can ignore the parasitic capacitance Cp between the inductor L1a and the inductor L2a, and can utilize the parasitic capacitance Cp between the inductor L1a and each of the inductors L2b and L2c as the capacitor C1. Therefore, the filter device 200 can avoid the occurrence of self-resonance in the inductor L1 or the inductor L2 due to the parasitic capacitance that occurs when the inductor L1 and the inductor L2 are placed close to each other, thereby achieving good pass characteristics.

[0131] <Modifications> The present disclosure is not limited to the above-described embodiment, and various modifications and applications are possible. Modifications that can be applied to the present disclosure will be described below.

[0132] The number of inductors included in inductor L1 may be one or more, and the number of inductors included in inductor L2 may be one or more. In the filter device of the present disclosure, at least one of inductor L1 and inductor L2 may include a plurality of inductors, and inductor L1 and inductor L2 may be arranged alternately in the stacking direction and magnetically coupled.

[0133] For example, the filter device may include one inductor L1 and a plurality of inductors L2, and the inductors may be arranged in the stacking direction such that the inductor L1 is sandwiched between the plurality of inductors L2.

[0134] For example, the filter device may include a plurality of inductors L1 and one inductor L2, and the inductors may be arranged in the stacking direction such that the inductors L1 sandwich the inductor L2.

[0135] For example, the filter device may include a plurality of inductors L1 and a plurality of inductors L2, with one inductor L1 and one inductor L2 alternately arranged in the stacking direction. Alternatively, the inductors may be arranged such that the plurality of inductors L1 sandwich the plurality of inductors L2 in the stacking direction. Furthermore, the inductors may be arranged such that the plurality of inductors L2 sandwich the plurality of inductors L1 in the stacking direction.

[0136] <Aspects> (Item 1) A filter device (100, 200) according to one aspect includes an insulator (10) including a first external electrode (11) and a second external electrode (12), a first inductor (L1) connected to the first external electrode, and a resonant circuit (RS) including a second inductor (L2) and a capacitor (C1). The first inductor is connected to the second external electrode and also to the resonant circuit. The first inductor and the second inductor are stacked within the insulator. At least one of the first inductor and the second inductor includes multiple inductor patterns. The first inductors and the second inductors are alternately arranged in the stacking direction and are magnetically coupled.

[0137] (Clause 2) The filter device described in clause 1 is a two-terminal filter consisting of a first external electrode and a second external electrode, which passes high-frequency signals in a first frequency band and attenuates high-frequency signals in a second frequency band lower than the first frequency band.

[0138] (Item 3) In the filter device according to item 1 or 2, the second inductor and the capacitor are connected in series between the first inductor and the second external electrode.

[0139] (4) In the filter device according to any one of the first to third paragraphs, the first inductor and the second inductor are connected in series between the first external electrode and the second external electrode.

[0140] (Item 5) In the filter device described in any one of items 1 to 4, the first inductor includes a plurality of first sub-inductors (L1a, L1b) connected in parallel between the first external electrode and the resonant circuit.

[0141] (Item 6) In the filter device described in any one of items 1 to 5, the second inductor includes a plurality of second sub-inductors (L2a, L2b, L2c) connected in series between the first inductor and the second external electrode.

[0142] (Item 7) In the filter device according to any one of items 1 to 6, the first inductor includes a plurality of first sub-inductors (L1a, L1b). The second inductor includes at least one second sub-inductor (L2a). The at least one second sub-inductor is sandwiched between the plurality of first sub-inductors in the stacking direction.

[0143] (Item 8) In the filter device according to any one of items 1 to 7, the first inductor includes a plurality of first sub-inductors (L1a, L1b). The second inductor includes a plurality of second sub-inductors (L2a, L2b). The plurality of first sub-inductors and the plurality of second sub-inductors are arranged alternately in the stacking direction.

[0144] (Item 9) In the filter device described in any one of Items 1 to 8, the multiple first sub-inductors are connected in parallel between the first external electrode and the resonant circuit. The multiple second sub-inductors are connected in series between the first inductor and the second external electrode. Each of the multiple first sub-inductors and one of the multiple second sub-inductors are connected in series at the same potential.

[0145] (Item 10) In the filter device according to any one of items 1 to 9, the first inductor is wound around a winding axis in the stacking direction. The second inductor is wound around a winding axis in the stacking direction. When the insulator is viewed from the stacking direction, at least a portion of the opening of the first inductor overlaps with the opening of the second inductor.

[0146] (Item 11) In the filter device described in any one of items 1 to 10, the number of second sub-inductors (L2a, L2b, L2c) included in the second inductor is greater than the number of first sub-inductors (L1a, L1b) included in the first inductor.

[0147] (Clause 12) An antenna device (1) according to one aspect includes a radiating element (50) that radiates a high-frequency signal in a first frequency band as radio waves, a power feeding circuit (RF1) that supplies the high-frequency signal in the first frequency band to the radiating element, and a filter device (100, 200) that is provided between the radiating element and the power feeding circuit.

[0148] (Item 13) An antenna module (3) according to one aspect includes a first antenna device (1) that emits a high-frequency signal in a first frequency band as a radio wave, and a second antenna device (2) that emits a high-frequency signal in a second frequency band as a radio wave. The first antenna device is the antenna device (1) described in Item 12.

[0149] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The scope of the present disclosure is defined by the claims, not by the description of the above embodiments, and is intended to include all modifications within the meaning and scope of the claims.

[0150] 1, 2 Antenna device, 3 Antenna module, 10 Insulator, 11 First external electrode, 11a, 11b, 11c, 12a, 12b, 12c External electrode, 12 Second external electrode, 50, 60 Radiating element, 70 Substrate, 100, 200 Filter device, C1 Capacitor, Cp Parasitic capacitance, L1a, L1b, L1, L2a, L2b, L2c, L2 Inductor, P1 First terminal, P2 Second terminal, RF1, RF2 Power supply circuit, RS Resonant circuit, TL1 First path, TL2 Second path.

Claims

1. A filter device comprising: an insulator including a first external electrode and a second external electrode; a first inductor connected to the first external electrode; and a resonant circuit including a second inductor and a capacitor, wherein the first inductor is connected to the second external electrode and is also connected to the resonant circuit, the first inductor and the second inductor are stacked within the insulator, at least one of the first inductor and the second inductor includes a plurality of inductor patterns, and the first inductor and the second inductor are arranged alternately in the stacking direction and are magnetically coupled.

2. The filter device according to claim 1, which is a two-terminal filter consisting of the first external electrode and the second external electrode, passes high-frequency signals in a first frequency band and attenuates high-frequency signals in a second frequency band lower than the first frequency band.

3. The filter device according to claim 1 or 2, wherein the second inductor and the capacitor are connected in series between the first inductor and the second external electrode.

4. A filter device according to any one of claims 1 to 3, wherein the first inductor and the second inductor are connected in series between the first external electrode and the second external electrode.

5. A filter device according to any one of claims 1 to 4, wherein the first inductor includes a plurality of first sub-inductors connected in parallel between the first external electrode and the resonant circuit.

6. A filter device according to any one of claims 1 to 5, wherein the second inductor includes a plurality of second sub-inductors connected in series between the first inductor and the second external electrode.

7. A filter device as described in any one of claims 1 to 4, wherein the first inductor includes a plurality of first sub-inductors, the second inductor includes at least one second sub-inductor, and the at least one second sub-inductor is sandwiched between the plurality of first sub-inductors in the stacking direction.

8. A filter device as described in any one of claims 1 to 4, wherein the first inductor includes a plurality of first sub-inductors, the second inductor includes a plurality of second sub-inductors, and the plurality of first sub-inductors and the plurality of second sub-inductors are arranged alternately in the stacking direction.

9. A filter device as described in claim 8, wherein the multiple first sub-inductors are connected in parallel between the first external electrode and the resonant circuit, the multiple second sub-inductors are connected in series between the first inductor and the second external electrode, and each of the multiple first sub-inductors and one of the multiple second sub-inductors are connected in series at the same potential.

10. A filter device as described in any one of claims 1 to 9, wherein the first inductor is wound with the stacking direction as its winding axis, the second inductor is wound with the stacking direction as its winding axis, and when the insulator is viewed from the stacking direction, at least a portion of an opening of the first inductor overlaps with an opening of the second inductor.

11. A filter device according to any one of claims 1 to 10, wherein the number of second sub-inductors included in the second inductor is greater than the number of first sub-inductors included in the first inductor.

12. An antenna device comprising: a radiating element that radiates a high-frequency signal in the first frequency band as radio waves; a power supply circuit that supplies the high-frequency signal in the first frequency band to the radiating element; and the filter device according to claim 2 that is provided between the radiating element and the power supply circuit.

13. An antenna module comprising: a first antenna device that radiates a high-frequency signal in the first frequency band as radio waves; and a second antenna device that radiates a high-frequency signal in the second frequency band as radio waves, wherein the first antenna device is the antenna device described in claim 12.

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