Extreme ultraviolet light production method, extreme ultraviolet light source assembly, and optical system

Abstract

An extreme ultraviolet light production method, an extreme ultraviolet light source assembly, and an optical system. The extreme ultraviolet light production method comprises: using a magnetic confinement apparatus (100) to produce plasma; when the plasma meets a preset injection condition, controlling a heavy-metal injection apparatus (200) to inject a specified heavy metal into the magnetic confinement apparatus (100), such that the specified heavy metal interacts with the plasma in the magnetic confinement apparatus (100) to produce extreme ultraviolet light; and controlling an optical apparatus (300) to collect the extreme ultraviolet light. Since the magnetic confinement apparatus (100) that meets the extreme ultraviolet light production requirement has a low cost, operates easily and stably and also has high electro-optical conversion efficiency, the extreme ultraviolet light production method improves the stability of extreme ultraviolet light and reduces the extreme ultraviolet light production cost.

Description

Extreme ultraviolet light generation method, extreme ultraviolet light source assembly and optical system

[0001] This application claims priority to the Chinese patent application filed with the China Patent Office on September 19, 2023, with application number "202311212358.6" and invention name "Extreme ultraviolet light generation method, extreme ultraviolet light source assembly and optical system", the entire content of which is incorporated by reference into this application. Technical Field

[0002] Embodiments of the present application relate to the field of semiconductor technology, and in particular to an extreme ultraviolet light generation method, an extreme ultraviolet light source assembly, and an optical system. Background Art

[0003] As chip integration continues to increase, photolithography feature sizes are required to shrink. Extreme ultraviolet (EUV) light sources are a newly developed technology. These sources produce exposure light with a wavelength of 13.5 nanometers or less. When applied to exposure systems, these sources can achieve very small photolithographic feature sizes.

[0004] Currently, the mainstream method for generating EUV light is laser-produced plasma (LPP). This method works by bombarding a tin (Sn) target with a laser beam from a laser source, thereby exciting a plasma that radiates EUV light. However, LPP still suffers from numerous issues, including high cost, short lifespan, and poor stability. Therefore, a low-cost and stable EUV light generation solution is urgently needed.

[0005] Summary of the Invention

[0006] In view of this, embodiments of the present application provide a method for generating extreme ultraviolet light. One or more embodiments of the present application also relate to an extreme ultraviolet light source assembly and an optical system to address technical deficiencies in the prior art.

[0007] According to a first aspect of an embodiment of the present application, a method for generating extreme ultraviolet light is provided, comprising:

[0008] Generate plasma using magnetic confinement devices;

[0009] When the plasma meets the preset injection conditions, controlling the heavy metal injection device to inject the specified heavy metal into the magnetic confinement device, so that the specified heavy metal reacts with the plasma in the magnetic confinement device to generate extreme ultraviolet light;

[0010] Control optics to collect extreme ultraviolet light.

[0011] According to a second aspect of an embodiment of the present application, there is provided an extreme ultraviolet light source assembly, comprising a magnetic confinement device, a heavy metal injection device, and an optical device, wherein the heavy metal injection device is connected to the magnetic confinement device;

[0012] a magnetic confinement device for generating plasma;

[0013] A heavy metal injection device is used to inject a specified heavy metal into the magnetic confinement device when the plasma meets preset injection conditions, so that the specified heavy metal reacts with the plasma in the magnetic confinement device to generate extreme ultraviolet light;

[0014] Optical device for collecting extreme ultraviolet light.

[0015] According to a third aspect of an embodiment of the present application, an optical system is provided, comprising the extreme ultraviolet light source assembly provided in the second aspect above.

[0016] One embodiment of the present application provides a method for generating extreme ultraviolet light. This method utilizes a magnetic confinement device to generate plasma. When the plasma meets preset injection conditions, a heavy metal injection device is controlled to inject a specified heavy metal into the magnetic confinement device, causing the specified heavy metal to interact with the plasma within the magnetic confinement device to generate extreme ultraviolet light. Furthermore, an optical device is controlled to collect the extreme ultraviolet light. Because a magnetic confinement device that meets the requirements for generating extreme ultraviolet light is low-cost, simple and stable to operate, and has high electro-optical conversion efficiency, this method improves the stability of the extreme ultraviolet light and reduces the cost of generating the light. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] FIG1 is a flow chart of a method for generating extreme ultraviolet light according to an embodiment of the present application;

[0018] FIG2 is a schematic diagram of an extreme ultraviolet light source assembly according to an embodiment of the present application;

[0019] FIG3 is an architecture diagram of an optical system provided by one embodiment of the present application.

[0020] Reference numerals

[0021] 100—magnetic confinement device, 200—heavy metal injection device, 300—optical device, 400—monitoring device, 500—control device, 600—data acquisition device;

[0022] 1002—vacuum chamber, 1004—magnet, 1006—magnet power supply, 1008—RF power source, 1010—RF wave antenna, 1012—air extraction pump group, 1014—intake valve assembly. DETAILED DESCRIPTION

[0023] The following description sets forth many specific details to facilitate a thorough understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar generalizations without violating the scope of the present application. Therefore, the present application is not limited to the specific implementations disclosed below.

[0024] The terms used in one or more embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit one or more embodiments of the present application. The singular forms "a", "the" and "the" used in one or more embodiments of the present application and the appended claims are also intended to include plural forms, unless the context clearly indicates otherwise. It should also be understood that the term "and / or" used in one or more embodiments of the present application refers to and includes any or all possible combinations of one or more associated listed items.

[0025] It should be understood that although the terms first, second, etc. may be used to describe various information in one or more embodiments of the present application, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of one or more embodiments of the present application, the first may also be referred to as the second, and similarly, the second may also be referred to as the first. Depending on the context, the word "if" as used herein may be interpreted as "at the time of" or "when" or "in response to determining".

[0026] First, the terms involved in one or more embodiments of the present application are explained.

[0027] Photolithography: Photolithography is a crucial step in semiconductor device manufacturing, forming a photoresist pattern through exposure and development processes. However, as chip integration continues to increase, the feature size required for photolithography continues to decrease. According to the diffraction-limited theory of light, the minimum feature size that can be resolved by a light wave is proportional to its wavelength. Therefore, shorter wavelengths of light are more conducive to achieving higher-precision photolithographic imaging.

[0028] Tokamak: When electricity is applied, a huge spiral magnetic field is generated inside the tokamak, heating the plasma inside to a very high temperature to achieve the purpose of nuclear fusion.

[0029] Magnetic Mirror: A magnetic field configuration formed by arranging two coils with the same current direction with their central axes overlapping. The magnetic field is strongest at the center of each coil and weakest in the middle of the coil.

[0030] Stellarator: A stellarator is a magnetic confinement fusion experimental device with an external spiral winding. It consists of a closed tube and an external coil. The closed tube can be straight, "racetrack," or spatially curved. Common stellarators have two or three pairs of spiral windings. The former has a magnetic surface shape similar to an ellipse, while the latter is approximately triangular. When equal and opposite currents are passed through adjacent spiral windings, the magnetic fields generated by the spiral windings combine with the longitudinal magnetic field, causing the magnetic field lines to rotate and transform, thus confining plasma without longitudinal current.

[0031] Field Reversed Configuration: Field Reversed Configuration (FRC) is a linear device. When the reverse current of the plasma inside the FRC is larger than the magnetic mirror magnetic field generated by the current of the external coil, the internal magnetic field will reverse in some areas, forming a closed magnetic field structure.

[0032] Reverse field pinch: It is a type of annular magnetic confinement fusion device. Its main feature is that the magnetic field that confines the plasma is generated by the internal current of the plasma. It has the advantages of pure ohmic heating to achieve fusion ignition conditions and high quality power density.

[0033] Plasma: Plasma is a form of matter primarily composed of free electrons and charged ions. Plasma is typically formed under conditions of high temperature, high energy, or strong electric fields. One common method is to heat a gas, giving the atoms or molecules within it sufficient energy to ionize and form plasma.

[0034] With the development of semiconductor manufacturing technology and nuclear fusion technology, how to generate extreme ultraviolet light has gradually become a research focus because when extreme ultraviolet light source is applied to the exposure system, very small lithography feature sizes can be obtained.

[0035] Currently, extreme ultraviolet light is typically generated through laser-generated plasma radiation. However, this technology still suffers from numerous issues, including high cost, short lifespan, and poor stability. The cost of an extreme ultraviolet light source using laser-generated plasma radiation is often very expensive. When the tin target used in laser-generated plasma radiation is irradiated by the high-energy laser beam, it forms a very hot plasma, producing high-energy ions and atoms. These ions and atoms strongly impact and corrode the tin target, leading to severe wear and tear. Furthermore, the corrosion and burning of the tin target also produces a large amount of debris and smoke, which adheres to the surface of optical components, affecting the radiation efficiency and stability of the extreme ultraviolet light source.

[0036] In order to solve the above problems, an embodiment of the present application proposes a method for generating extreme ultraviolet light, which uses a magnetic confinement device to generate plasma; when the plasma meets preset injection conditions, the heavy metal injection device is controlled to inject specified heavy metals into the magnetic confinement device, so that the specified heavy metals react with the plasma in the magnetic confinement device to generate extreme ultraviolet light; and the optical device is controlled to collect the extreme ultraviolet light.

[0037] It is worth noting that the magnetic confinement device proposed in the embodiments of the present application has the advantages of low cost, simple and stable operation, and high electro-optical conversion efficiency. Specifically, taking the magnetic confinement device as a tokamak as an example, in the process of generating extreme ultraviolet light in the present application, the plasma in the tokamak does not need to reach the temperature of a nuclear fusion reaction. Therefore, the cost and requirements of the tokamak used to generate extreme ultraviolet light are greatly reduced, and the difficulty of generating extreme ultraviolet light is also greatly reduced. In addition, because the plasma generated by the extreme ultraviolet light source assembly can be well confined within the vacuum chamber of the tokamak by the magnetic field, the corrosion and burning of the light source wall material by the plasma is effectively reduced, thereby extending the life of the extreme ultraviolet light source assembly.

[0038] In the present application, a method for generating extreme ultraviolet light is provided. The present application also relates to an extreme ultraviolet light source assembly and an optical system, which are described in detail one by one in the following embodiments.

[0039] 1 , which shows a flow chart of a method for generating extreme ultraviolet light according to an embodiment of the present application, specifically comprising the following steps:

[0040] Step 102: Generate plasma using a magnetic confinement device.

[0041] Specifically, magnetic confinement refers to the use of a magnetic field to constrain the movement of charged particles in a plasma. Magnetic confinement devices include, but are not limited to, tokamaks, stellarators, magnetic mirrors, field inversions, and reverse field pinches. Tokamaks can be either annular or spherical. They include a vacuum chamber, magnets, a magnet power supply, a radio frequency (RF) power source, an RF antenna, an exhaust pump assembly, and an inlet valve assembly.

[0042] It should be noted that before using the magnetic confinement device to generate plasma, the extreme ultraviolet light source assembly can be maintained and repaired to ensure that the extreme ultraviolet light source assembly is in good condition and can operate normally.

[0043] In practical applications, taking the magnetic confinement device as a tokamak as an example, the use of a tokamak to generate plasma can include the following steps: First, the vacuum pump group can be controlled to exhaust the gas in the vacuum chamber to ensure that the vacuum chamber reaches the required high vacuum environment, generally 10 -5Secondly, the magnet power supply can be started to start the superconducting coil to generate a 1T to 2T toroidal magnetic field at the magnetic axis of the tokamak. Then, the millisecond pulse inlet valve assembly can be started to inject an appropriate amount of high-purity hydrogen into the vacuum chamber. The filling pressure is generally 10 -2 Pa to 10 -3 Finally, the RF power source can be activated, coupling high-power microwaves or millimeter waves into the plasma via the RF antenna. Because the hydrogen has been pre-ionized by thermal electrons, the injected 2.45 GHz high-power microwaves or millimeter waves effectively excite and maintain a circular plasma current until the plasma meets the preset injection conditions, typically 100 kA.

[0044] Step 104: When the plasma meets the preset injection conditions, control the heavy metal injection device to inject the specified heavy metal into the magnetic confinement device, so that the specified heavy metal reacts with the plasma in the magnetic confinement device to generate extreme ultraviolet light.

[0045] In one or more embodiments of the present application, after generating plasma using a magnetic confinement device, further, when the plasma meets preset injection conditions, the heavy metal injection device can be controlled to inject specified heavy metals into the magnetic confinement device, so that the specified heavy metals react with the plasma in the magnetic confinement device to generate extreme ultraviolet light.

[0046] Specifically, the preset injection condition can be that the plasma reaches a certain temperature and density, such as a density of 10 18 m -3 , electron temperature 10 million degrees, plasma current 100kA. In one embodiment, when the plasma meets the preset injection conditions, it is a steady-state plasma, and steady-state plasma refers to plasma in steady-state operation. Heavy metals refer to those with a density greater than 4.5g / cm 3 The designated heavy metal refers to a metal element that can produce strong extreme ultraviolet light, and the designated heavy metal includes at least one of tin powder, tungsten powder, nickel powder, and tantalum powder.

[0047] Furthermore, after the plasma is generated by the magnetic confinement device, the heavy metal injection device can be controlled to inject the specified heavy metal into the magnetic confinement device, and the injection rate and angle of the specified heavy metal can be appropriately adjusted to ensure that the target mass of the specified heavy metal is excited to generate extreme ultraviolet light. For example, if the specified heavy metal is tin powder, if the electron density is 10 18 m -3 , the density of tin atoms is 10 15 m -3 , the electron temperature is 10 million degrees. According to the following formula (1), it can be estimated that the impurity radiation power of tin is on the order of 100W, which is enough to produce extreme ultraviolet light and can be further increased by increasing the density.R =n e n I R (1)

[0048] Among them, P R represents the radiated power, n e represents the electron density, n I represents the tin atomic density, and R represents the electron temperature.

[0049] In practical applications, the heavy metal injection device can inject the specified heavy metal into the magnetic confinement device by selecting one of tin powder, tungsten powder, nickel powder, and tantalum powder. There are various ways for the heavy metal injection device to inject the specified heavy metal into the magnetic confinement device, and the method selected depends on the actual situation. This embodiment of the present application does not impose any limitation on this method.

[0050] In a possible implementation of the present application, the heavy metal injection device can intermittently inject specified heavy metals into the magnetic confinement device.

[0051] In another possible implementation of the present application, in order to ensure the stability of the extreme ultraviolet light source, the heavy metal injection device can continuously inject the specified heavy metal into the magnetic confinement device. That is, the above-mentioned control of the heavy metal injection device to inject the specified heavy metal into the magnetic confinement device can include the following steps:

[0052] The heavy metal injection device is controlled to continuously inject a target mass of a designated heavy metal into the magnetic confinement device.

[0053] Specifically, the target mass refers to the mass value of the specified heavy metal injected into the magnetic confinement device, and the mass value includes but is not limited to the weight value and the volume value.

[0054] In practical applications, the heavy metal injection device can inject specified heavy metals into the magnetic confinement device at a specified rate and angle. The specified heavy metals are heated in the magnetic confinement device to release heavy metal atoms. The heavy metal atoms are excited by interacting with other atoms in the plasma, thereby generating extreme ultraviolet light.

[0055] By applying the solution of the embodiment of the present application, since the heavy metal injection device can continuously inject the target mass of the specified heavy metal into the magnetic confinement device, the problem of high production cost of the extreme ultraviolet light source due to waste of the specified heavy metal is avoided, and the situation of instability of the extreme ultraviolet light due to insufficient specified heavy metal is also avoided. In addition, the continuous injection of the specified heavy metal further ensures the stability of the extreme ultraviolet light source.

[0056] In one embodiment, before controlling the heavy metal injection device to continuously inject the target mass of the specified heavy metal into the magnetic confinement device, a target mass of the specified heavy metal can also be determined. There are various methods for determining the target mass, and the method is selected based on actual circumstances. This embodiment of the present application does not impose any limitation on this method.

[0057] In a possible implementation of the present application, the target mass may be randomly generated.

[0058] In another possible implementation of the present application, the designated heavy metal generally cannot be completely ionized in the magnetic confinement device. Therefore, the target mass can be determined based on the ionization rate of the designated heavy metal injected into the magnetic confinement device. That is, before the above-mentioned controlling the heavy metal injection device to continuously inject the target mass of the designated heavy metal into the magnetic confinement device, the following steps may be further included:

[0059] The target mass of the specified heavy metal is determined based on the optical power of the EUV light and the ionization rate of the specified heavy metal.

[0060] Specifically, optical power refers to the work done by extreme ultraviolet light per unit time. Since different designated heavy metals generally have different ionization rates, the target masses of different designated heavy metals injected into the magnetic confinement device by the heavy metal injection device generally also vary.

[0061] By applying the solution of the embodiment of the present application, the target mass is determined based on the optical power of the extreme ultraviolet light and the ionization rate of the specified heavy metal, thereby ensuring the accuracy of the target mass.

[0062] Step 106: Control the optical device to collect the extreme ultraviolet light.

[0063] In one or more embodiments of the present application, a magnetic confinement device is used to generate plasma; when the plasma meets preset injection conditions, a heavy metal injection device is controlled to inject specified heavy metals into the magnetic confinement device, so that the specified heavy metals react with the plasma in the magnetic confinement device to generate extreme ultraviolet light. Further, an optical device can be controlled to collect the extreme ultraviolet light.

[0064] Specifically, extreme ultraviolet light may be referred to as extreme ultraviolet radiation. The optical device includes, but is not limited to, a reflector, a filter, a focusing mirror, and a spectrometer.

[0065] By applying the solution of the embodiments of the present application, the stability of the extreme ultraviolet light is improved and the cost of generating the extreme ultraviolet light can be reduced because the magnetic confinement device that meets the requirements for generating extreme ultraviolet light has low cost, simple and stable operation, and high electro-optical conversion efficiency.

[0066] In one embodiment, after controlling the optical device to collect the extreme ultraviolet light, the optical device can be controlled to filter and focus the extreme ultraviolet light, while accurately measuring and controlling the extreme ultraviolet light, thereby ensuring the stability of the extreme ultraviolet light and the purity of the extreme ultraviolet light spectrum.

[0067] In one embodiment, before the above-mentioned controlling heavy metal injection device to inject the specified heavy metal into the magnetic confinement device, the following steps may also be included:

[0068] Monitor plasma and obtain plasma parameters;

[0069] Determine whether the plasma meets the preset injection conditions based on the plasma parameters.

[0070] Specifically, plasma parameters include but are not limited to density, temperature, shape, impurities, and magnetic field.

[0071] It should be noted that when determining whether the plasma meets the preset injection conditions based on the plasma parameters, the reference parameters corresponding to the plasma meeting the preset injection conditions can be obtained, and the plasma parameters obtained by monitoring are compared with the reference parameters. If the plasma parameters do not reach the reference parameters, it means that the plasma does not meet the preset injection conditions; if the plasma parameters reach the reference parameters, it means that the plasma meets the preset injection conditions. The reference parameters are generally density 10 18 m -3 , electron temperature 10 million degrees, plasma current 100kA.

[0072] By applying the solution of the embodiment of the present application, the plasma is monitored and the plasma parameters are obtained; based on the plasma parameters, it is determined whether the plasma meets the preset injection conditions. Only when the plasma meets the preset injection conditions will the heavy metal injection device be controlled to inject the specified heavy metal into the magnetic confinement device, thereby ensuring that when the specified heavy metal is injected into the magnetic confinement device, the plasma meets the preset injection conditions, further ensuring the stability of the extreme ultraviolet light generation.

[0073] In one embodiment, after determining whether the plasma meets the preset injection conditions based on the plasma parameters, the following steps may also be included:

[0074] When the plasma does not meet the preset injection conditions, the plasma parameters are adjusted.

[0075] It should be noted that if the plasma does not meet the preset injection conditions, the heavy metal injection device will not inject the specified heavy metal into the magnetic confinement device. To generate extreme ultraviolet light, in this embodiment of the present application, the plasma parameters can be adjusted until the plasma meets the preset injection conditions, at which point the heavy metal injection device will be controlled to inject the specified heavy metal into the magnetic confinement device.

[0076] By applying the solution of the embodiment of the present application, when the plasma does not meet the preset injection conditions, the plasma parameters are adjusted to achieve precise control of the plasma parameters such as density, temperature, and shape, thereby making the extreme ultraviolet light more stable.

[0077] In one embodiment, after the above-mentioned control optical device collects the extreme ultraviolet light, the following steps may be further included:

[0078] Collect and record plasma parameters and extreme ultraviolet light parameters.

[0079] It should be noted that after collecting and recording the plasma parameters and the extreme ultraviolet light parameters, it is possible to determine whether the extreme ultraviolet light generated by the extreme ultraviolet light source assembly meets actual needs based on the plasma parameters and the extreme ultraviolet light parameters. If it does not meet actual needs, it is returned to regenerate the extreme ultraviolet light.

[0080] By applying the solution of the embodiment of the present application, plasma parameters and extreme ultraviolet light parameters are collected and recorded, ensuring that the operation process of the extreme ultraviolet light source assembly is traceable.

[0081] Referring to FIG. 2 , FIG. 2 shows an architecture diagram of an extreme ultraviolet light source assembly provided by one embodiment of the present application. As shown in FIG. 2 , the extreme ultraviolet light source assembly includes a magnetic confinement device 100 , a heavy metal injection device 200 , and an optical device 300 . The heavy metal injection device 200 is connected to the magnetic confinement device 100 .

[0082] A magnetic confinement device 100 for generating plasma;

[0083] The heavy metal injection device 200 is used to inject a specified heavy metal into the magnetic confinement device 100 when the plasma meets the preset injection conditions, so that the specified heavy metal reacts with the plasma in the magnetic confinement device 100 to generate extreme ultraviolet light;

[0084] The optical device 300 is used to collect extreme ultraviolet light.

[0085] By applying the solution of the embodiments of the present application, the stability of the extreme ultraviolet light is improved and the cost of generating the extreme ultraviolet light can be reduced because the magnetic confinement device that meets the requirements for generating extreme ultraviolet light has low cost, simple and stable operation, and high electro-optical conversion efficiency.

[0086] In one embodiment, the magnetic confinement apparatus 100 comprises a tokamak comprising a vacuum chamber, a magnet, and a radio frequency wave antenna;

[0087] a vacuum chamber to contain the plasma;

[0088] a magnet for generating a magnetic field to confine the plasma in the vacuum chamber through the magnetic field;

[0089] The radio frequency wave antenna is used to transmit microwaves or millimeter waves into the vacuum chamber so that the microwaves or millimeter waves are coupled with the plasma and drive the plasma current.

[0090] It should be noted that the vacuum chamber is the core of the tokamak. It is generally constructed of stainless steel and has high vacuum and high temperature resistance to ensure the stable operation of the tokamak. The maximum radius of the vacuum chamber is generally 1.2m to 1.3m, and the minimum radius is generally 0.2m to 0.3m.

[0091] Magnets generate a powerful magnetic field to control the movement and shape of the plasma generated by the tokamak. Magnets are made of superconducting coils, which achieve zero resistance at low temperatures, improving magnetic field stability and efficiency. The toroidal magnetic field strength is typically 1T to 2T.

[0092] RF antennas typically use phased waveguide arrays. By adjusting the phase difference between the main waveguides, the antenna's reflection coefficient is reduced, thereby improving the efficiency of driving the plasma current. Microwaves or millimeter waves can heat the plasma and drive the plasma current. The interaction between microwaves or millimeter waves and plasma occurs through low-hybrid resonance or electron cyclotron resonance.

[0093] In the embodiments of this application, a vacuum chamber houses the plasma; a magnet generates a magnetic field to control the movement of the plasma within the chamber; and a radio frequency antenna transmits microwaves or millimeter waves into the chamber, coupling the microwaves or millimeter waves with the plasma and driving the plasma current. Because the plasma generated by the tokamak is well confined within the vacuum chamber by the magnetic field, corrosion and burn-off of the light source wall by the plasma are effectively reduced, extending the life of the EUV light source assembly and the light source.

[0094] In one embodiment, the extreme ultraviolet light source assembly further includes a monitoring device;

[0095] The monitoring device is used to monitor the plasma and obtain plasma parameters; determine whether the plasma meets the preset injection conditions based on the plasma parameters; when the plasma meets the preset injection conditions, send an injection instruction to the heavy metal injection device 200 to enable the heavy metal injection device 200 to inject the specified heavy metal into the magnetic confinement device 100.

[0096] It should be noted that during the generation of extreme ultraviolet light, the monitoring device can be controlled to monitor the density, temperature, impurities, magnetic field and other parameters of the plasma in real time. The monitoring device can be called a plasma density, temperature, impurity, and magnetic field diagnostic device. The monitoring device includes but is not limited to a microwave interferometer, a Langmuir probe, a magnetic probe, and a variety of radiation diagnostics (hard X-rays, soft X-rays, AXUV detectors).

[0097] In one embodiment, the extreme ultraviolet light source assembly further includes a control device;

[0098] The control device is used to adjust the plasma parameters when the plasma does not meet the preset injection conditions.

[0099] It should be noted that during the EUV light generation process, the control device can adjust the plasma parameters, realizing real-time regulation and control of the EUV light source components to maintain a stable plasma state and optimize the light source output.

[0100] In one embodiment, the extreme ultraviolet light source assembly further includes a data acquisition device;

[0101] A data acquisition device is used to collect and record plasma parameters and extreme ultraviolet light parameters.

[0102] It should be noted that during the EUV light generation process, a data acquisition device can be controlled to monitor and record the discharge process of the EUV light source assembly, such as recording plasma parameters and EUV light parameters. After the discharge ends, the EUV light source assembly can be controlled to gradually shut down, and necessary maintenance and repairs can be performed on the assembly to ensure long-term stable operation.

[0103] 3 , which shows an architecture diagram of an optical system provided by one embodiment of the present application. The optical system includes an extreme ultraviolet light source assembly. As shown in FIG3 , the magnetic confinement device included in the extreme ultraviolet light source assembly is a tokamak. The extreme ultraviolet light source assembly also includes a heavy metal injection device 200, an optical device 300, a monitoring device 400, a control device 500, and a data acquisition device 600. The tokamak includes a vacuum chamber 1002, a magnet 1004, a magnet power supply 1006, a radio frequency power source 1008, a radio frequency wave antenna 1010, an air pump assembly 1012, and an air inlet valve assembly 1014.

[0104] A vacuum chamber 1002 for containing plasma;

[0105] The magnet 1004 is used to generate a magnetic field to confine the plasma in the vacuum chamber 1002 through the magnetic field;

[0106] a magnet power supply 1006 for providing current to the magnet 1004;

[0107] RF power source 1008, used to generate high-power microwaves or millimeter waves;

[0108] a radio frequency wave antenna 1010 for transmitting microwaves or millimeter waves into the vacuum chamber 1002 so that the microwaves or millimeter waves couple with the plasma and drive the plasma current;

[0109] The vacuum pump assembly 1012 is used to exhaust the gas in the vacuum chamber 1002 to maintain a high vacuum environment;

[0110] An inlet valve assembly 1014 for controlling the rate and type of gas entering the vacuum chamber 1002;

[0111] The monitoring device 400 is used to monitor the plasma and obtain plasma parameters; determine whether the plasma meets the preset injection conditions based on the plasma parameters; and send an injection instruction to the heavy metal injection device 200 when the plasma meets the preset injection conditions, so that the heavy metal injection device 200 injects the specified heavy metal into the tokamak;

[0112] The control device 500 is used to adjust the plasma parameters when the plasma does not meet the preset injection conditions;

[0113] A data acquisition device 600 is used to collect and record plasma parameters and EUV light parameters;

[0114] The heavy metal injection device 200 is used to inject a specified heavy metal into the tokamak when the plasma meets the preset injection conditions, so that the specified heavy metal reacts with the plasma in the tokamak to generate extreme ultraviolet light;

[0115] The optical device 300 is used to collect, filter and focus extreme ultraviolet light, and is also used to measure and control the extreme ultraviolet light.

[0116] It should be noted that the RF power source 1008 can utilize a magnetron, with a microwave frequency typically at 2.45 GHz and a power range of several hundred kilowatts to megawatts. The vacuum pump assembly 1012 typically includes a molecular pump, a mechanical pump, and an ion pump to provide a sufficient vacuum rate. The plasma composition and density can be adjusted by adjusting the inlet valve assembly 1014. The working gas is typically hydrogen.

[0117] By applying the solution of the embodiments of the present application, since the tokamak used to generate extreme ultraviolet light is low-cost, reusable, and can achieve stable operation, the extreme ultraviolet light source assembly can generate stable plasma and stable extreme ultraviolet light, and can also reduce the manufacturing cost of the light source. In addition, the plasma generated by the extreme ultraviolet light source assembly can be well confined within the vacuum chamber by the magnetic field, thereby effectively reducing the corrosion and burning of the light source wall material by the plasma, and extending the life of the extreme ultraviolet light source assembly and the light source. The control device adjusts the parameters based on the plasma parameters fed back in real time by the monitoring device, achieving precise control of the plasma parameters such as density, temperature, and shape, thereby making the extreme ultraviolet light more stable.

[0118] In one embodiment of the present application, the optical system may further include a component control unit. The component control unit may be any type of stationary or mobile computing device, including a mobile computer or mobile computing device (e.g., a tablet computer, a personal digital assistant, a laptop computer, a notebook computer, a netbook, etc.) or other types of mobile devices, or a stationary computing device such as a desktop computer or a personal computer (PC). The component control unit may also be a mobile or stationary server.

[0119] The component control unit is used to execute computer-executable instructions, which, when executed by the component control unit, implement the steps of the above-mentioned extreme ultraviolet light generation method.

[0120] The above is a schematic diagram of a component control unit of this embodiment. It should be noted that the technical solution of the component control unit and the technical solution of the above-mentioned extreme ultraviolet light generation method are based on the same concept. For details not described in detail in the technical solution of the component control unit, please refer to the description of the technical solution of the above-mentioned extreme ultraviolet light generation method.

[0121] An embodiment of the present application further provides a computer-readable storage medium storing computer-executable instructions, which, when executed by a processor, implement the steps of the above-mentioned extreme ultraviolet light generation method.

[0122] The above is a schematic diagram of a computer-readable storage medium according to this embodiment. It should be noted that the technical solution of this storage medium is based on the same concept as the technical solution of the above-mentioned method for generating extreme ultraviolet light. For details not described in detail in the technical solution of the storage medium, please refer to the description of the technical solution of the above-mentioned method for generating extreme ultraviolet light.

[0123] An embodiment of the present application further provides a computer program, wherein when the computer program is executed in a computer, the computer is caused to execute the steps of the above-mentioned extreme ultraviolet light generation method.

[0124] The above is an illustrative embodiment of a computer program. It should be noted that the technical solution of the computer program and the technical solution of the above-mentioned method for generating extreme ultraviolet light are based on the same concept. For details not described in detail in the technical solution of the computer program, please refer to the description of the technical solution of the above-mentioned method for generating extreme ultraviolet light.

[0125] The foregoing description describes specific embodiments of the present application. Other embodiments are within the scope of the appended claims. In some cases, the actions or steps recited in the claims can be performed in an order different from that described in the embodiments and still achieve the desired results. Furthermore, the processes depicted in the accompanying drawings do not necessarily require the specific order shown or the sequential order to achieve the desired results. In certain embodiments, multitasking and parallel processing are also possible or may be advantageous.

[0126] The computer executable instructions include computer program code, which may be in source code form, object code form, executable file, or some intermediate form. The computer readable medium may include: any entity or device capable of carrying the computer program code, recording medium, USB flash drive, mobile hard disk, magnetic disk, optical disk, computer memory, read-only memory (ROM), random access memory (RAM), electric carrier signal, telecommunication signal, and software distribution medium. It should be noted that the content contained in the computer readable medium may be appropriately increased or decreased according to the requirements of patent practice. For example, in some regions, according to patent practice, computer readable media does not include electric carrier signals and telecommunication signals.

[0127] It should be noted that for the aforementioned method embodiments, for the sake of simplicity of description, they are all expressed as a series of action combinations, but those skilled in the art should be aware that the embodiments of the present application are not limited by the order of the actions described, because according to the embodiments of the present application, certain steps can be performed in other orders or simultaneously. Secondly, those skilled in the art should also be aware that the embodiments described in this application are all preferred embodiments, and the actions and modules involved are not necessarily required by the embodiments of the present application.

[0128] In the above embodiments, the description of each embodiment has its own focus. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0129] The preferred embodiments of the present application disclosed above are intended only to help illustrate the present application. The embodiments do not describe all details in detail, nor do they limit the invention to the specific embodiments described. Obviously, many modifications and variations can be made based on the content of the embodiments of the present application. This application selects and describes these embodiments in detail in order to better explain the principles and practical applications of the embodiments of the present application, so that those skilled in the art can better understand and utilize the present application. This application is limited only by the claims and their full scope and equivalents.

Claims

1. A method for generating extreme ultraviolet light, comprising: Generate plasma using magnetic confinement device; When the plasma meets the preset injection conditions, controlling the heavy metal injection device to inject the specified heavy metal into the magnetic confinement device, so that the specified heavy metal reacts with the plasma in the magnetic confinement device to generate extreme ultraviolet light; An optical device is controlled to collect the extreme ultraviolet light.

2. The method according to claim 1, wherein: The designated heavy metal includes at least one of tin powder, tungsten powder, nickel powder and tantalum powder.

3. The method according to claim 1, wherein: The magnetic confinement device comprises any one of a tokamak, a stellarator, a magnetic mirror, a field inversion configuration, and an inverted field pinch.

4. The method according to claim 1, wherein: The controlling heavy metal injection device to inject a specified heavy metal into the magnetic confinement device comprises: The heavy metal injection device is controlled to continuously inject a target mass of a designated heavy metal into the magnetic confinement device.

5. The method according to claim 4, wherein: Before the heavy metal injection device is controlled to continuously inject the target mass of the designated heavy metal into the magnetic confinement device, the method further comprises: The target mass of the specified heavy metal is determined based on the optical power of the EUV light and the ionization rate of the specified heavy metal.

6. The method according to claim 1, wherein: Before the controlling heavy metal injection device to inject the designated heavy metal into the magnetic confinement device, the method further comprises: monitoring the plasma to obtain plasma parameters; Determine whether the plasma meets a preset injection condition according to the plasma parameters.

7. The method according to claim 6, wherein: After determining whether the plasma meets the preset injection condition according to the plasma parameters, the method further includes: When the plasma does not satisfy the preset injection condition, the plasma parameter is adjusted.

8. The method according to claim 1, wherein: After the control optical device collects the extreme ultraviolet light, the control optical device further comprises: Collect and record plasma parameters and EUV light parameters.

9. The method according to claim 1, wherein: After the control optical device collects the extreme ultraviolet light, the control optical device further comprises: The optical device is controlled to filter and focus the extreme ultraviolet light.

10. An extreme ultraviolet light source assembly, comprising: a magnetic confinement device configured to generate a plasma; A heavy metal injection device is connected to the magnetic confinement device and is configured to: when the plasma meets a preset injection condition, inject a specified heavy metal into the magnetic confinement device, so that the specified heavy metal reacts with the plasma in the magnetic confinement device to generate extreme ultraviolet light; as well as An optical device is configured to collect the extreme ultraviolet light.

11. The extreme ultraviolet light source assembly according to claim 10, wherein: The magnetic confinement device comprises a tokamak, and the tokamak comprises: a vacuum chamber configured to contain the plasma; a magnet configured to generate a magnetic field to confine plasma in the vacuum chamber by the magnetic field; and The radio frequency wave antenna is configured to transmit microwaves or millimeter waves into the vacuum chamber so that the microwaves or millimeter waves are coupled with the plasma and drive the plasma current.

12. The extreme ultraviolet light source assembly according to claim 10, further comprising: A monitoring device is configured to: monitor the plasma and obtain plasma parameters; Determining whether the plasma meets the preset injection condition according to the plasma parameter; When the plasma meets the preset injection condition, an injection instruction is sent to the heavy metal injection device, so that the heavy metal injection device injects the designated heavy metal into the magnetic confinement device.

13. The extreme ultraviolet light source assembly according to claim 10, further comprising: The control device is configured to adjust the plasma parameters when the plasma does not meet the preset injection conditions.

14. The extreme ultraviolet light source assembly of claim 10, further comprising: The data acquisition device is configured to acquire and record plasma parameters and extreme ultraviolet light parameters.

15. An optical system comprising: An extreme ultraviolet light source assembly as claimed in any one of claims 10 to 14.

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