Power amplifier circuit and radio frequency power amplifier module

By adding specific circuit components to the power amplifier circuit to form a phase compensation circuit, the complexity and high cost problems of amplitude modulation-phase modulation distortion of the power amplifier in the prior art are solved, and performance optimization is achieved.

WO2025060824A1PCT designated stage expired Publication Date: 2025-03-27LANSUS TECH INC

Patent Information

Application Number
PCT/CN2024/114451
Authority / Receiving Office
WO · WO
Patent Type
Applications
Current Assignee / Owner
Priority Date
2023-09-22
Filing Date
2024-08-26
Publication Date
2025-03-27

AI Technical Summary

Technical Problem

The method technology to reduce the impact of amplitude modulation-phase modulation distortion of power amplifiers in the prior art is complex and costly.

Method used

By adding a coupled signal amplifier, power detection module, capacitor assembly, transistor assembly and varactor diode to the power amplifier circuit, a phase compensation circuit is formed to optimize the amplitude modulation-phase modulation performance of the amplifier.

Benefits of technology

It realizes the optimization of the amplitude modulation-phase modulation performance of the power amplifier without increasing complexity and cost, and improves the ACLR performance of the RF signal.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present invention relates to the technical field of radio frequency. Disclosed are a power amplifier circuit and a radio frequency power amplifier module. The power amplifier circuit comprises a signal input end, a first-stage power amplifier, a coupler, an inter-stage matching circuit, a final-stage power amplifier, an output matching circuit, and a signal output end. The final-stage power amplifier comprises a first field-effect transistor. The power amplifier circuit further comprises a power detection module, a capacitor assembly consisting of multiple capacitors connected in parallel, a first triode, a first resistor, a triode assembly consisting of one or more triodes connected in series, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varicap diode. According to the power amplifier circuit of the present invention, the amplitude modulation and phase modulation performance of amplifiers can be optimized, the technical implementation is simple, and the cost is low.
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Description

Power amplifier circuit and RF power amplifier module Technical Field

[0001] The present invention relates to the field of radio frequency technology, and in particular to a power amplifier circuit and a radio frequency power amplifier module. Background Art

[0002] The RF front-end module 100 of a time-division communication system (TDD) primarily includes a power amplifier component 101 for amplifying the RF signal output (TX) by the RF chip, a receiving circuit component 102 for receiving (RX) the signal path, an RF switch component 103 for switching between the transmit and receive paths, and a logic control component (not shown) for controlling the operating states of other components. The receiving circuit component typically includes a low-noise amplifier (LNA). These components are assembled on a substrate, connected together by wire bonding, and packaged to complete the module, as shown in Figures 1 to 3.

[0003] In memory-free power amplifiers, the amplifier's amplitude modulation-amplitude modulation distortion (AM-AM) and amplitude modulation-phase modulation distortion (AM-PM) significantly impact the ACLR performance of time-division communication systems. A major source of AM-PM distortion is the nonlinear variation of transistor equivalent capacitance. As the amplifier's input power increases, this change in transistor equivalent capacitance causes a shift in the phase difference between the output and input signals, leading to deterioration in ACLR performance. Specifically, the nonlinear variation of the gate and source capacitance (Cgs) of the final-stage amplifier transistors across different operating ranges is the primary cause of AM-PM distortion. For example, as the final-stage amplifier transitions from the cutoff region to the saturation region, the gate and source capacitance of the transistors increases with increasing input power.

[0004] In related technologies, there are many methods to reduce the impact of amplitude modulation-phase modulation distortion of power amplifiers, such as digital predistortion (DPD). Although this method can reduce the amplitude modulation-phase modulation distortion of power amplifiers, its technical implementation is complex and the cost is high.

[0005] Summary of the Invention

[0006] The purpose of the present invention is to provide a power amplifier circuit and a radio frequency power amplifier module to solve the problem that the method of reducing the influence of amplitude modulation and phase modulation distortion of the power amplifier in the related art is not only technically complex to implement but also has high cost.

[0007] In order to solve the above technical problems, in a first aspect, the present invention provides a power amplifier circuit, which includes a signal input terminal, a first-stage power amplifier, a coupler, an inter-stage matching circuit, a final-stage power amplifier, an output matching circuit, and a signal output terminal; the final-stage power amplifier includes a first field-effect transistor; the input terminal of the first-stage power amplifier is connected to the signal input terminal, the input terminal of the coupler is connected to the output terminal of the first-stage power amplifier, the input terminal of the inter-stage matching circuit is connected to the first output terminal of the coupler, the gate of the first field-effect transistor is respectively connected to the output terminal of the inter-stage matching circuit and a power supply voltage, the source of the first field-effect transistor is grounded, the drain of the first field-effect transistor is connected to the power supply voltage, the input terminal of the output matching circuit is connected to the drain of the first field-effect transistor, and the output terminal of the output matching circuit is connected to the signal output terminal;

[0008] The power amplifier circuit further includes a power detection module, a capacitor assembly consisting of multiple capacitors connected in parallel, a first transistor, a first resistor, a transistor assembly, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varactor diode; wherein the transistor assembly is a single transistor, or is composed of multiple transistors connected in series;

[0009] The input end of the power detection module is connected to the second output end of the coupler;

[0010] The first ends of the capacitor components are connected to the output end of the power detection module, and the second ends of the capacitor components are grounded, and are used to filter out radio frequency interference signals in the DC signal and smooth the DC signal;

[0011] The base of the first transistor is connected to the output end of the power detection module;

[0012] A first end of the first resistor is connected to the collector of the first transistor, and a second end of the first resistor is connected to the power supply voltage;

[0013] The first end of the triode assembly is connected to the emitter of the first triode;

[0014] The first end of the second resistor is connected to the second end of the triode assembly;

[0015] The first end of the first capacitor is connected to the second end of the second resistor, and the second end of the first capacitor is grounded;

[0016] The first end of the third resistor is connected to the second end of the second resistor;

[0017] The first end of the first inductor is connected to the second end of the third resistor;

[0018] The first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second capacitor is connected to the gate of the first field effect transistor;

[0019] The cathode of the varactor diode is connected to the second end of the first inductor, and the anode of the varactor diode is grounded.

[0020] Preferably, the power amplifier circuit also includes a multi-stage DC amplifier circuit connected between the base of the first transistor and the output end of the power detection module, the number of stages of the DC amplifier circuit is an even number, and the DC amplifier circuit is used to make the input characteristics and output characteristics of the DC signal positive.

[0021] Preferably, the DC amplifier circuit includes a first-stage DC amplifier circuit and a second-stage DC amplifier circuit, and the first-stage DC amplifier circuit and the second-stage DC amplifier circuit are used to adjust the phase of the DC signal;

[0022] The first-stage DC amplifier circuit includes a fourth resistor, a fifth resistor, a second triode, a sixth resistor, and a seventh resistor; the second-stage DC amplifier circuit includes an eighth resistor, a third triode, a ninth resistor, and a tenth resistor;

[0023] A first end of the fourth resistor is connected to the output end of the power detection module, and a second end of the fourth resistor is connected to the power supply voltage;

[0024] A first end of the fifth resistor is connected to the output end of the power detection module, and a second end of the fifth resistor is grounded;

[0025] The base of the second transistor is connected to the output end of the power detection module;

[0026] A first end of the sixth resistor is connected to the collector of the second transistor, and a second end of the sixth resistor is connected to the power supply voltage;

[0027] A first end of the seventh resistor is connected to the emitter of the second transistor, and a second end of the seventh resistor is grounded;

[0028] A first end of the eighth resistor is connected to the collector of the second transistor;

[0029] The base of the third transistor is connected to the second end of the eighth resistor;

[0030] A first end of the ninth resistor is connected to the collector of the third transistor, and a second end of the ninth resistor is connected to the power supply voltage;

[0031] A first end of the tenth resistor is connected to the emitter of the third transistor, and a second end of the tenth resistor is grounded;

[0032] The base of the first transistor is connected to the collector of the third transistor.

[0033] Preferably, the capacitor assembly includes a third capacitor and a fourth capacitor connected in parallel with each other.

[0034] Preferably, the triode assembly includes a fourth triode and a fifth triode connected in series;

[0035] The base of the fourth transistor and the collector of the fourth transistor serve as the first end of the transistor assembly;

[0036] The base of the fifth transistor and the collector of the fifth transistor are respectively connected to the emitter of the fourth transistor, and the emitter of the fifth transistor serves as the second end of the transistor assembly.

[0037] Preferably, the power amplifier circuit further includes an adjustable resistance module connected to the second end of the second resistor; the adjustable resistance module is used to adjust the voltage output by the second resistor; the adjustable resistance module includes a second field effect transistor, an eleventh resistor, a twelfth resistor, and a thirteenth resistor;

[0038] The drain of the second field effect transistor is connected to the second end of the second resistor, and the source of the second field effect transistor is grounded;

[0039] A first end of the eleventh resistor is connected to the gate of the second field effect transistor, and a second end of the eleventh resistor is connected to the power supply voltage;

[0040] A first end of the twelfth resistor is connected to the gate of the second field effect transistor, and a second end of the twelfth resistor is grounded;

[0041] A first end of the thirteenth resistor is connected to a pin of an external device, the pin of the external device is connected to the gate of the second field effect transistor, and a second end of the thirteenth resistor is grounded.

[0042] Preferably, the power amplifier module further includes a current source; two ends of the current source are respectively connected to the gate of the first field effect transistor and the power supply voltage.

[0043] Preferably, the power amplifier module further includes a second inductor; two ends of the second inductor are respectively connected to the drain of the first field effect transistor and the power supply voltage.

[0044] Preferably, the power amplifier module further includes a coupling signal amplifier; the input end of the coupling signal amplifier is connected to the second output end of the coupler; and the input end of the power detection module is connected to the output end of the coupling signal amplifier.

[0045] In a second aspect, the present invention provides a radio frequency power amplifier module, which includes the power amplifier circuit as described above.

[0046] Compared with related arts, the power amplifier circuit of the present invention only comprises a coupling signal amplifier, a power detection module, a capacitor assembly consisting of multiple capacitors connected in parallel, a first transistor, a first resistor, a transistor assembly consisting of multiple transistors connected in series, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varactor diode, which are added between a coupler, a varactor diode, and a first field-effect transistor of a final-stage power amplifier. In this way, when the input power increases, the voltage of the DC signal increases, thereby reducing the capacitance of the varactor diode to compensate for the increase in capacitance between the gate and source of the first field-effect transistor, thereby balancing the total capacitance of the gate and source of the first field-effect transistor, and thus optimizing the amplitude modulation and phase modulation performance of the amplifier. Furthermore, the technology is simple to implement and has low cost. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. Those skilled in the art can also derive other drawings based on these drawings without inventive work, among which:

[0048] FIG1 is a circuit structure diagram of a radio frequency front-end power amplifier module provided by the related art;

[0049] FIG2 is a planar structural diagram of a radio frequency front-end power amplifier module provided by the related art;

[0050] FIG3 is a cross-sectional view of a radio frequency front-end power amplifier module provided by the related art;

[0051] FIG4 is a circuit structure diagram of a power amplifier circuit used in a radio frequency power amplifier module provided by this embodiment. DETAILED DESCRIPTION

[0052] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0053] Example 1

[0054] An embodiment of the present invention provides a power amplifier circuit 200, as shown in FIG4 , which includes a signal input terminal (not shown), a first-stage power amplifier 201, a coupler 202, an inter-stage matching circuit 203, a final-stage power amplifier 204, an output matching circuit 205, and a signal output terminal (not shown). The final-stage power amplifier 204 includes a first field-effect transistor Q1; the input terminal of the first-stage power amplifier 201 is connected to the signal input terminal, the input terminal of the coupler 202 is connected to the output terminal of the first-stage power amplifier, the input terminal of the inter-stage matching circuit 203 is connected to the first output terminal of the coupler 202, the gate of the first field-effect transistor Q1 is respectively connected to the output terminal of the inter-stage matching circuit 203 and the power supply voltage VCC, the source of the first field-effect transistor Q1 is grounded, the drain of the first field-effect transistor Q1 is connected to the power supply voltage VCC, the input terminal of the output matching circuit 205 is connected to the drain of the first field-effect transistor Q1, and the output terminal of the output matching circuit 205 is connected to the signal output terminal.

[0055] Specifically, the power amplifier circuit 200 further includes a power detection module 206, a capacitor assembly 207 consisting of multiple capacitors connected in parallel, a first transistor Q2, a first resistor R1, a transistor assembly 208 consisting of one or more transistors connected in series, a second resistor R2, a first capacitor C1, a third resistor R3, a first inductor L1, a second capacitor C2, and a varactor diode VC1. The transistor assembly 208 is a single transistor or a plurality of transistors connected in series.

[0056] The input end of the power detection module 206 is connected to the second output end of the coupler 202, and is used to convert the RF signal output by the coupler 202 into a DC signal. That is, the larger the input RF signal, the larger the DC voltage amplitude of the output.

[0057] The first end of each capacitor in capacitor assembly 207 is connected to the output end of power detection module 206, and the second end of each capacitor in capacitor assembly 207 is grounded. These capacitors are used to filter out RF interference signals from the DC signal and smooth the DC signal. If the amplified RF signal has a strong peak-to-average ratio, the DC signal will have large fluctuations, which will affect the accuracy of power detection. Therefore, the filter circuit formed by capacitor assembly 207 is required to filter out these fluctuations to smooth the DC signal. Depending on the actual situation, multiple capacitors of different capacitance values ​​can be used, with the capacitance value of each capacitor typically ranging from tens of pF to hundreds of nF.

[0058] The base of the first transistor Q2 is connected to the output end of the power detection module 206 for current amplification of the DC signal.

[0059] A first end of the first resistor R1 is connected to the collector of the first transistor Q2 , and a second end of the first resistor R1 is connected to the power supply voltage VCC for providing current to the collector of the first transistor Q2 .

[0060] A first terminal of the transistor component 208 is connected to the emitter of the first transistor Q2 for adjusting a turn-on voltage.

[0061] A first terminal of the second resistor R2 is connected to a second terminal of the transistor component 208 .

[0062] A first end of the first capacitor C1 is connected to a second end of the second resistor R2 , and a second end of the first capacitor C1 is grounded for filtering high-frequency signals.

[0063] A first end of the third resistor R3 is connected to the second end of the second resistor R2 for adjusting the direct current of the varactor diode VC1 .

[0064] A first end of the first inductor L1 is connected to a second end of the third resistor R3 , and is used for high-frequency isolation between the third resistor R3 and the varactor diode VC1 , and is also used for filtering high-frequency signals.

[0065] A first end of the second capacitor C2 is connected to the second end of the first inductor L1 , and a second end of the second capacitor C2 is connected to the gate of the first field effect transistor Q1 .

[0066] The cathode of the varactor diode VC1 is connected to the second end of the first inductor L1 , and the anode of the varactor diode VC1 is grounded.

[0067] In this embodiment, the power amplification module further includes a coupling signal amplifier 212; the input end of the coupling signal amplifier 212 is connected to the second output end of the coupler 202, and is used to amplify the radio frequency signal output by the coupler 202; the input end of the power detection module 206 is connected to the output end of the coupling signal amplifier 212. In other words, when the output signal of the coupler 202 is sufficiently large, the direct connection of the coupling signal amplifier 212 can be eliminated according to actual conditions.

[0068] In this embodiment, a phase compensation circuit is formed by a coupling signal amplifier 212, a power detection module 206, a capacitor assembly 207 consisting of multiple capacitors connected in parallel, a first transistor Q2, a first resistor R1, a transistor assembly 208 consisting of multiple transistors connected in series, a second resistor R2, an adjustable resistance module 210, a first capacitor C1, a third resistor R3, a first inductor L1, a second capacitor C2, and a varactor diode VC1. The coupling pin of the coupler 202 outputs a signal to the phase compensation network.

[0069] Specifically, the power amplifier circuit 200 also includes a multi-stage DC amplifier circuit 209 connected between the base of the first transistor Q2 and the output of the power detection module 206. The number of stages of the DC amplifier circuit 209 is an even number, and the DC amplifier circuit 209 is used to ensure that the input and output characteristics of the DC signal are positive. The number of stages of the DC amplifier circuit 209 is determined by the output voltage of the upstream device. If the output voltage of the upstream device is sufficiently high, the DC amplifier circuit 209 may not be required. The DC amplifier circuit 209, in conjunction with the first transistor Q2, also maintains the phase of the DC signal.

[0070] In this embodiment, the DC amplifier circuit 209 includes a first-stage DC amplifier circuit 209 and a second-stage DC amplifier circuit 209 . The first-stage DC amplifier circuit 209 and the second-stage DC amplifier circuit 209 are used to adjust the phase of the DC signal.

[0071] The first-stage DC amplifier circuit 209 includes a fourth resistor R4, a fifth resistor R5, a second transistor Q3, a sixth resistor R6, and a seventh resistor R7; the second-stage DC amplifier circuit 209 includes an eighth resistor R8, a third transistor Q4, a ninth resistor R9, and a tenth resistor R10.

[0072] A first end of the fourth resistor R4 is connected to the output end of the power detection module 206 , and a second end of the fourth resistor R4 is connected to the power supply voltage VCC.

[0073] A first end of the fifth resistor R5 is connected to the output end of the power detection module 206 , and a second end of the fifth resistor R5 is grounded.

[0074] The base of the second transistor Q3 is connected to the output terminal of the power detection module 206 .

[0075] A first end of the sixth resistor R6 is connected to the collector of the second transistor Q3 , and a second end of the sixth resistor R6 is connected to the power supply voltage VCC.

[0076] A first end of the seventh resistor R7 is connected to the emitter of the second transistor Q3 , and a second end of the seventh resistor R7 is grounded.

[0077] A first end of the eighth resistor R8 is connected to the collector of the second transistor Q3 for adjusting the output voltage of the DC signal.

[0078] The base of the third transistor Q4 is connected to the second end of the eighth resistor R8.

[0079] A first end of the ninth resistor R9 is connected to the collector of the third transistor Q4 , and a second end of the ninth resistor R9 is connected to the power supply voltage VCC.

[0080] A first end of the tenth resistor R10 is connected to the emitter of the third transistor Q4 , and a second end of the tenth resistor R10 is grounded.

[0081] The base of the first transistor Q2 is connected to the collector of the third transistor Q4.

[0082] Specifically, the capacitor assembly 207 includes a third capacitor C3 and a fourth capacitor C4 connected in parallel, wherein a first end of the third capacitor C3 and a first end of the fourth capacitor C4 are both connected to the output end of the power detection module 206, and a second end of the third capacitor C3 and a second end of the fourth capacitor C4 are grounded.

[0083] Specifically, the transistor assembly 208 includes a fourth transistor Q5 and a fifth transistor Q6 connected in series.

[0084] The base of the fourth transistor Q5 and the collector of the fourth transistor Q5 serve as the first end of the transistor assembly 208 .

[0085] The base and the collector of the fifth transistor Q6 are respectively connected to the emitter of the fourth transistor Q5 , and the emitter of the fifth transistor Q6 serves as the second end of the transistor assembly 208 .

[0086] Of course, according to actual conditions, the transistor assembly 208 can also be composed of one or more components; this embodiment uses two series components, and the conduction voltage difference between the base and emitter of each transistor is V 12 .

[0087] If the voltage at point c is Vc, then the voltage at point d is Vd = Vc - V 12 Q2-V 12 Q5-V 12 Q6; and only when Vc>V 12 Q2+V 12 Q5+V 12 Q6, Vd has voltage output.

[0088] In this embodiment, the fourth transistor Q5 and the fifth transistor Q6 are used to set the control threshold. 12 Q2+V 12 Q5+V 12 Q6, the control takes effect, otherwise the first transistor Q2, the fourth transistor Q5 and the fifth transistor Q6 are in the cut-off state and the control does not take effect.

[0089] Specifically, the power amplifier circuit 200 further includes an adjustable resistance module 210 connected to the second end of the second resistor R2 ; the adjustable resistance module 210 is used to adjust the voltage output by the second resistor R2 .

[0090] The adjustable resistance module 210 includes a second field effect transistor Q7 , an eleventh resistor R11 , a twelfth resistor R12 , and a thirteenth resistor R13 .

[0091] The drain of the second field effect transistor Q7 is connected to the second end of the second resistor R2 , and the source of the second field effect transistor Q7 is grounded.

[0092] A first end of the eleventh resistor R11 is connected to the gate of the second field effect transistor Q7 , and a second end of the eleventh resistor R11 is connected to the power supply voltage VCC.

[0093] A first end of the twelfth resistor R12 is connected to the gate of the second field effect transistor Q7 , and a second end of the twelfth resistor R12 is grounded.

[0094] A first end of the thirteenth resistor R13 is connected to a pin P1 of an external device, the pin P1 of the external device is connected to a gate of the second field effect transistor Q7 , and a second end of the thirteenth resistor R13 is grounded.

[0095] In this embodiment, the adjustable resistor module 210 is used to adjust the voltage Va at point a, which is derived from the internal point b; the thirteenth resistor R13 is connected to the outside of the device, and its specific resistance value is determined when the system board is designed; the eleventh resistor R11, the twelfth resistor R12 and the thirteenth resistor R13 jointly determine the gate voltage of the second field effect transistor Q7, that is, the voltage Vb at point b.

[0096] Vb=VCC*R12*R13 / (R12*R13+R11*R12*R11*R13);

[0097] Vb determines the resistance Rds between the drain and source of the second field effect transistor Q7. In this embodiment, an N-channel FET is selected, so that Vb increases and Rds decreases.

[0098] Va=Vd*Rds / (R2+Rds);

[0099] Va is output to the cathode of the varactor diode VC1 through the third resistor R3 and the first inductor L1 ; the first inductor L1 needs to be placed close to the cathode of the varactor diode VC1 .

[0100] In this embodiment, the pin P1 of the external device is provided to lead out the circuit at point b. Thus, in application, the thirteenth resistor R13 with different resistance values ​​is connected to the pin P1 of the external device, thereby meeting different control requirements and optimizing output performance.

[0101] Specifically, the power amplifier module further includes a current source 211 ; two ends of the current source 211 are respectively connected to the gate of the first field effect transistor Q1 and the power supply voltage VCC.

[0102] Specifically, the power amplifier module further includes a second inductor L2; two ends of the second inductor L2 are respectively connected to the drain of the first field effect transistor Q1 and the power supply voltage VCC.

[0103] The power flow and the second inductor L2 are both used to provide a DC bias.

[0104] Specifically, the RF signal of the power amplifier circuit 200 is input from the signal input end to the first-stage power amplifier 201, amplified by the first-stage power amplifier 201 and output to the coupler 202. The main signal is output to the first field-effect transistor after inter-stage matching, amplified again and output matched to 50 ohms, and finally output to the outside through the signal output end.

[0105] The power amplifier circuit 200 in this embodiment merely comprises a coupling signal amplifier 212, a power detection module 206, a capacitor assembly 207 consisting of multiple capacitors connected in parallel, a first transistor Q2, a first resistor R1, a transistor assembly 208 consisting of multiple transistors connected in series, a second resistor R2, a first capacitor C1, a third resistor R3, a first inductor L1, a second capacitor C2, and a varactor VC1, between the coupler 202, the varactor VC1, and the first field-effect transistor Q1 of the final power amplifier 204. Thus, when the input power increases, the voltage of the DC signal increases, Va increases, and the voltage Ve at point e increases, thereby reducing the capacitance of the varactor VC1 to compensate for the increase in capacitance between the gate and source of the first field-effect transistor Q1. This balances the total capacitance between the gate and source of the first field-effect transistor Q1, thereby optimizing the amplitude modulation and phase modulation performance of the amplifier. Furthermore, the technology is simple to implement and relatively low in cost. Furthermore, it can reduce radiation, lower energy consumption, and extend the product's service life.

[0106] Example 2

[0107] This embodiment provides a radio frequency power amplifier module, which includes the power amplifier circuit 200 in Example 1. Since the radio frequency power amplifier module in this embodiment includes the power amplifier circuit 200 in Example 1, it can also achieve the technical effects achieved by the power amplifier circuit 200 in Example 1, and will not be described in detail here.

[0108] The above descriptions are merely embodiments of the present invention and are not intended to limit the scope of the present invention. Any equivalent structures or equivalent process changes made using the contents of the present invention's description and drawings, or any direct or indirect application in other related technical fields, are also included in the scope of the present invention's patent protection.

Claims

1. A power amplifier circuit, comprising a signal input terminal, a first-stage power amplifier, a coupler, an inter-stage matching circuit, a final-stage power amplifier, an output matching circuit and a signal output terminal; the final-stage power amplifier comprises a first field effect transistor; the input terminal of the first-stage power amplifier is connected to the signal input terminal, the input terminal of the coupler is connected to the output terminal of the first-stage power amplifier, the input terminal of the inter-stage matching circuit is connected to the first output terminal of the coupler, the gate of the first field effect transistor is respectively connected to the output terminal of the inter-stage matching circuit and a power supply voltage, the source of the first field effect transistor is grounded, the drain of the first field effect transistor is connected to the power supply voltage, the input terminal of the output matching circuit is connected to the drain of the first field effect transistor, and the output terminal of the output matching circuit is connected to the signal output terminal; characterized in that The power amplifier circuit further includes a power detection module, a capacitor component composed of a plurality of capacitors connected in parallel, a first transistor, a first resistor, a transistor component, a second resistor, a first capacitor, a third resistor, a first inductor, a second capacitor, and a varactor diode; wherein the transistor component is a single transistor, or is composed of a plurality of transistors connected in series; The input end of the power detection module is connected to the second output end of the coupler; The first ends of the capacitor components are connected to the output end of the power detection module, and the second ends of the capacitor components are grounded, so as to filter out the radio frequency interference signal in the DC signal and smooth the DC signal; The base of the first transistor is connected to the output end of the power detection module; A first end of the first resistor is connected to the collector of the first transistor, and a second end of the first resistor is connected to the power supply voltage; The first end of the triode assembly is connected to the emitter of the first triode; The first end of the second resistor is connected to the second end of the triode assembly; The first end of the first capacitor is connected to the second end of the second resistor, and the second end of the first capacitor is grounded; The first end of the third resistor is connected to the second end of the second resistor; The first end of the first inductor is connected to the second end of the third resistor; The first end of the second capacitor is connected to the second end of the first inductor, and the second end of the second capacitor is connected to the gate of the first field effect transistor; A cathode of the varactor diode is connected to the second end of the first inductor, and an anode of the varactor diode is grounded.

2. The power amplifier circuit according to claim 1, characterized in that: The power amplifier circuit also includes a multi-stage DC amplifier circuit connected between the base of the first transistor and the output end of the power detection module. The number of stages of the DC amplifier circuit is an even number, and the DC amplifier circuit is used to make the input characteristics and output characteristics of the DC signal positive.

3. The power amplifier circuit according to claim 2, characterized in that: The DC amplifier circuit comprises a first-stage DC amplifier circuit and a second-stage DC amplifier circuit, wherein the first-stage DC amplifier circuit and the second-stage DC amplifier circuit are used to adjust the phase of the DC signal; The first-stage DC amplifier circuit includes a fourth resistor, a fifth resistor, a second triode, a sixth resistor and a seventh resistor; the second-stage DC amplifier circuit includes an eighth resistor, a third triode, a ninth resistor and a tenth resistor; A first end of the fourth resistor is connected to the output end of the power detection module, and a second end of the fourth resistor is connected to the power supply voltage; A first end of the fifth resistor is connected to the output end of the power detection module, and a second end of the fifth resistor is grounded; The base of the second transistor is connected to the output end of the power detection module; A first end of the sixth resistor is connected to the collector of the second transistor, and a second end of the sixth resistor is connected to the power supply voltage; A first end of the seventh resistor is connected to the emitter of the second transistor, and a second end of the seventh resistor is grounded; A first end of the eighth resistor is connected to the collector of the second transistor; The base of the third transistor is connected to the second end of the eighth resistor; A first end of the ninth resistor is connected to the collector of the third transistor, and a second end of the ninth resistor is connected to the power supply voltage; A first end of the tenth resistor is connected to the emitter of the third transistor, and a second end of the tenth resistor is grounded; The base of the first transistor is connected to the collector of the third transistor.

4. The power amplifier circuit according to claim 1, characterized in that: The capacitor component includes a third capacitor and a fourth capacitor connected in parallel with each other.

5. The power amplifier circuit according to claim 1, characterized in that: The triode assembly comprises a fourth triode and a fifth triode connected in series in sequence; The base of the fourth triode and the collector of the fourth triode serve as the first end of the triode assembly; The base of the fifth transistor and the collector of the fifth transistor are respectively connected to the emitter of the fourth transistor, and the emitter of the fifth transistor serves as the second end of the transistor assembly.

6. The power amplifier circuit according to claim 1, characterized in that: The power amplifier circuit further includes an adjustable resistance module connected to the second end of the second resistor; the adjustable resistance module is used to adjust the voltage output by the second resistor; The adjustable resistance module includes a second field effect transistor, an eleventh resistor, a twelfth resistor and a thirteenth resistor; The drain of the second field effect transistor is connected to the second end of the second resistor, and the source of the second field effect transistor is grounded; A first end of the eleventh resistor is connected to the gate of the second field effect transistor, and a second end of the eleventh resistor is connected to the power supply voltage; A first end of the twelfth resistor is connected to the gate of the second field effect transistor, and a second end of the twelfth resistor is grounded; A first end of the thirteenth resistor is connected to a pin of an external device, the pin of the external device is connected to a gate of the second field effect transistor, and a second end of the thirteenth resistor is grounded.

7. The power amplifier circuit according to claim 1, characterized in that: The power amplifier circuit also includes a current source; two ends of the current source are respectively connected to the gate of the first field effect tube and the power supply voltage.

8. The power amplifier circuit according to claim 1, characterized in that: The power amplifier circuit also includes a second inductor; two ends of the second inductor are respectively connected to the drain of the first field effect tube and the power supply voltage.

9. The power amplifier circuit according to claim 1, characterized in that: The power amplification circuit further comprises a coupling signal amplifier; the input end of the coupling signal amplifier is connected to the second output end of the coupler; the input end of the power detection module is connected to the output end of the coupling signal amplifier.

10. A radio frequency power amplifier module, characterized in that: The radio frequency power amplifier module includes the power amplifier circuit as described in any one of claims 1 to 9.

Citation Information

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