Manufacturing system for light-emitting device

Abstract

Provided is a manufacturing system for a light-emitting device, with which it is possible to continuously process steps from light-emitting device formation to sealing. In this manufacturing system having an in-line type cluster, a substrate surface is angled (greater than 90 degrees, 135 degrees) relative to the horizontal plane during processing in manufacturing apparatuses such as a vapor deposition apparatus and during movement between the manufacturing apparatuses. During resist coating and exposure processing, the substrate surface is roughly parallel to the horizontal plane.

Description

Light-emitting device manufacturing system

[0001] One embodiment of the present invention relates to a manufacturing system, a manufacturing apparatus, and a manufacturing method for a light-emitting device.

[0002] Note that one embodiment of the present invention is not limited to the above technical field. The technical field of one embodiment of the invention disclosed in this specification and the like relates to an object, a method, or a manufacturing method. Alternatively, one embodiment of the present invention relates to a process, a machine, manufacture, or a composition of matter. Therefore, more specifically, examples of the technical field of one embodiment of the present invention disclosed in this specification include a semiconductor device, a display device, a liquid crystal display device, a light-emitting device, a lighting device, a power storage device, a memory device, an imaging device, and an operation method thereof or a manufacturing method thereof.

[0003] In recent years, there has been a demand for higher definition display panels. Devices requiring high-definition display panels include, for example, smartphones, tablet terminals, and notebook computers. Furthermore, stationary display devices such as televisions and monitors are also required to have higher definitions in line with the trend toward higher resolutions. Furthermore, devices requiring the highest definition include, for example, devices for virtual reality (VR) or augmented reality (AR).

[0004] Representative examples of devices applicable to display panels include light-emitting devices such as organic electroluminescence (EL) devices (also referred to as organic EL elements) or light-emitting devices equipped with light-emitting diodes (LEDs: Light Emitting Diodes), liquid crystal display devices, and electronic paper that displays using an electrophoresis system.

[0005] An organic EL device has a structure in which a layer containing a light-emitting substance is sandwiched between a pair of electrodes. By applying a voltage to this element, light can be emitted from the light-emitting organic compound. A light-emitting device using such an organic EL device does not require a backlight, which is necessary in liquid crystal display devices and the like, and can therefore be thin, lightweight, high-contrast, and low-power-consumption. For example, an example of a light-emitting device using an organic EL device is described in Patent Document 1.

[0006] JP 2002-324673 A

[0007] As the resolution of display panels increases, the processes become more complex, and as substrates become larger, the volume of process chambers (also called film formation chambers) and the number of process chambers increase, which in turn increases the volume of film formation equipment including these process chambers. Furthermore, a larger-scale exhaust system is required to reduce the pressure in these process chambers to create a vacuum, which increases the installation area and weight of the manufacturing equipment including the film formation equipment.

[0008] Additionally, in the current manufacturing of small and medium-sized panels, the light-emitting materials are painted separately using metal masks, etc. However, because the process using metal masks has low alignment accuracy, the area occupied by the light-emitting element within the pixel must be small, making it difficult to increase the aperture ratio.

[0009] Therefore, processes using metal masks pose challenges in increasing pixel density or light emission intensity. To increase the aperture ratio, it is preferable to enlarge the area of ​​the light-emitting element using a lithography process or other method. However, the reliability of the materials that make up light-emitting devices deteriorates when impurities (such as water, oxygen, and hydrogen) enter the device from the atmosphere. Therefore, multiple processes must be performed in an atmosphere-controlled environment.

[0010] Alternatively, when light-emitting devices are produced using a vacuum deposition method that uses a metal mask, multiple lines of manufacturing equipment are required. For example, because the metal mask needs to be cleaned periodically, at least two or more lines of manufacturing equipment must be prepared, and one manufacturing equipment must be used for production while the other is under maintenance. Therefore, when considering mass production, multiple lines of manufacturing equipment are required. Therefore, there is a problem in that the initial investment for introducing the manufacturing equipment is very large.

[0011] Therefore, one object of one embodiment of the present invention is to provide a manufacturing system that is smaller in size and footprint by reducing the volume of a film formation apparatus having a process chamber (film formation chamber). Another object of one embodiment of the present invention is to provide a manufacturing method and manufacturing apparatus for a light-emitting device that can process formed organic layers without exposing them to the air in processes from formation to encapsulation of the light-emitting device. Another object is to provide a manufacturing apparatus that can form a light-emitting device. Another object is to provide a manufacturing method for a light-emitting device.

[0012] An object of one embodiment of the present invention is to provide a light-emitting device with high display quality by using the above-described manufacturing system. Another object of one embodiment of the present invention is to provide a high-definition light-emitting device. Another object of one embodiment of the present invention is to provide a high-resolution light-emitting device. Another object of one embodiment of the present invention is to provide a highly reliable light-emitting device. Another object of one embodiment of the present invention is to provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another object of one embodiment of the present invention is to provide a novel display module with excellent convenience, usefulness, or reliability. Another object of one embodiment of the present invention is to provide a novel electronic device with excellent convenience, usefulness, or reliability. Another object of one embodiment of the present invention is to provide a novel light-emitting device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0013] Note that the description of these problems does not preclude the existence of other problems. Note that one embodiment of the present invention does not necessarily solve all of these problems. Note that problems other than these will become apparent from the description of the specification, drawings, claims, etc., and it is possible to extract other problems from the description of the specification, drawings, claims, etc.

[0014] One aspect of the present invention relates to a system and apparatus for manufacturing a light emitting device.

[0015] One aspect of the present invention has first to seventh clusters and first to sixth load lock chambers, the first cluster being connected to the second cluster via the first load lock chamber, the second cluster being connected to the third cluster via the second load lock chamber, the third cluster being connected to the fourth cluster via the third load lock chamber, the fourth cluster being connected to the fifth cluster via the fourth load lock chamber, the fifth cluster being connected to the sixth cluster via the fifth load lock chamber, and the sixth cluster being connected to the seventh cluster via the sixth load lock chamber, the first cluster, the third cluster, the fifth cluster, and the seventh cluster being controlled to reduced pressure, the first, third, fifth, and seventh clusters each have a plurality of film formation devices for forming organic films and a film formation device for forming inorganic films; the third, fifth, and seventh clusters each have an etching device; the second, fourth, and sixth clusters each have a plurality of devices for performing a lithography process and a function for adjusting the angle of the substrate with respect to the horizontal plane; and the deposition process is performed in a state in which the substrate is at an angle of more than 90 degrees and not more than 135 degrees with respect to the horizontal direction.

[0016] One aspect of the present invention has first to seventh clusters and first to sixth load lock chambers, wherein the first cluster is connected to the second cluster via the first load lock chamber, the second cluster is connected to the third cluster via the second load lock chamber, the third cluster is connected to the fourth cluster via the third load lock chamber, the fourth cluster is connected to the fifth cluster via the fourth load lock chamber, the fifth cluster is connected to the sixth cluster via the fifth load lock chamber, and the sixth cluster is connected to the seventh cluster via the sixth load lock chamber, and the first, third, fifth, and seventh clusters are controlled to reduced pressure, and the second, fourth, and sixth clusters are inert. the first cluster, the third cluster, the fifth cluster, and the seventh cluster each have a plurality of film formation devices for forming organic films and a film formation device for forming inorganic films; the third cluster, the fifth cluster, and the seventh cluster each have an etching device; the second cluster, the fourth cluster, and the sixth cluster each have a plurality of devices for performing a lithography process, and each have a function for adjusting the angle of the substrate with respect to the horizontal plane; the deposition process is performed with the substrate at an angle of more than 90 degrees and not more than 135 degrees with respect to the horizontal; and the lithography process is performed with the substrate at an angle of more than 135 degrees and not more than 180 degrees with respect to the horizontal.

[0017] In the above, the plurality of film forming apparatuses for forming organic films are vapor deposition apparatuses, and the vapor deposition source is a light emitting device manufacturing apparatus that is installed parallel to the substrate.

[0018] Furthermore, the plurality of film forming apparatuses for forming the organic films are vapor deposition apparatuses having a first vapor deposition source containing a first organic compound and a second vapor deposition source containing a second organic compound, and the first vapor deposition source and the second vapor deposition source are installed parallel to the substrate.

[0019] In the above, the film forming apparatus for forming the inorganic film is an ALD apparatus, which is a light-emitting device manufacturing apparatus.

[0020] In the above, the light-emitting device manufacturing apparatus has a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus as a plurality of apparatuses for performing lithography processes.

[0021] In the above-described light-emitting device manufacturing apparatus, the vapor deposition step is performed with the substrate at an angle of 100 degrees or more and 135 degrees or less with respect to the horizontal direction.

[0022] In the above, the lithography process is performed by a light-emitting device manufacturing apparatus in which the substrate is approximately parallel to the horizontal direction.

[0023] By using one embodiment of the present invention, a manufacturing system with a small footprint can be provided, and a manufacturing apparatus that performs successive deposition processes on organic compound layers included in a light-emitting device without exposure to the atmosphere can be provided.

[0024] One embodiment of the present invention can provide a light-emitting device with high design freedom, such as a stacked structure. One embodiment of the present invention can provide a light-emitting device with high display quality. Another embodiment of the present invention can provide a high-definition light-emitting device. Another embodiment of the present invention can provide a high-resolution light-emitting device. Another embodiment of the present invention can provide a highly reliable light-emitting device. Another embodiment of the present invention can provide a novel light-emitting device with excellent convenience, usefulness, or reliability. Another embodiment of the present invention can provide a novel display module with excellent convenience, usefulness, or reliability. Another embodiment of the present invention can provide a novel electronic device with excellent convenience, usefulness, or reliability. Another embodiment of the present invention can provide a novel light-emitting device, a novel display module, a novel electronic device, or a novel semiconductor device.

[0025] Note that the description of these effects does not preclude the existence of other effects. Note that one embodiment of the present invention does not necessarily have all of these effects. Note that effects other than these can be extracted from the description in the specification, drawings, claims, etc.

[0026] FIG. 1 is a schematic diagram illustrating a configuration of a manufacturing system that can be used to manufacture a light-emitting device according to an embodiment. FIGS. 2A and 2B are schematic diagrams illustrating a configuration of a film formation apparatus that can be used to manufacture a light-emitting device according to an embodiment. FIGS. 3A to 3E are diagrams illustrating a configuration of a light-emitting device according to an embodiment. FIGS. 4A and 4B are top views and cross-sectional views of a light-emitting device. FIGS. 5A to 5D are diagrams illustrating a light-emitting device. FIGS. 6A to 6E are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 7A to 7E are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 8A to 8C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 9A to 9C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 10A to 10C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 11A to 11C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 12A to 12C are cross-sectional views illustrating an example of a method for manufacturing a light-emitting device. FIGS. 13A to 13G are top views illustrating examples of pixel configurations. FIGS. 14A to 14I are top views showing configuration examples of pixels. FIGS. 15A and 15B are perspective views showing configuration examples of display modules. FIGS. 16A and 16B are cross-sectional views showing configuration examples of light-emitting devices. FIG. 17 is a perspective view showing a configuration example of a light-emitting device. FIG. 18A is a cross-sectional view showing a configuration example of a light-emitting device. FIGS. 18B and 18C are cross-sectional views showing configuration examples of transistors. FIG. 19 is a cross-sectional view showing a configuration example of a light-emitting device. FIGS. 20A to 20D are cross-sectional views showing a configuration example of a light-emitting device. FIGS. 21A to 21D are diagrams showing examples of electronic devices. FIGS. 22A to 22F are diagrams showing examples of electronic devices. FIGS. 23A to 23G are diagrams showing examples of electronic devices.

[0027] The embodiments will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it will be readily understood by those skilled in the art that various modifications in form and detail may be made without departing from the spirit and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the description of the embodiments shown below. In the configuration of the invention described below, the same parts or parts having similar functions will be designated by the same reference numerals in different drawings, and repeated description thereof may be omitted. In addition, hatching of the same elements constituting the drawings may be omitted or changed as appropriate in different drawings.

[0028] Embodiment 1 In this embodiment, a configuration of a manufacturing system that can be used for manufacturing a light-emitting device of one embodiment of the present invention will be described with reference to FIGS.

[0029] 1 is a diagram illustrating a configuration of a manufacturing system including a plurality of manufacturing apparatuses that can be used to manufacture a light-emitting device according to one embodiment of the present invention. The manufacturing apparatuses include a film formation apparatus, an apparatus for performing an etching step and an ashing step, a baking apparatus for heating, a cleaning apparatus, a coating apparatus, and a resist removal apparatus.

[0030] 1 is a schematic diagram of an inline manufacturing system 1000A according to one embodiment of the present invention. In this specification, the manufacturing system includes a plurality of clusters and load-lock chambers (also referred to as load-in or load-out devices) arranged in the order of processes. A cluster is a group of devices that share a transport device, and in particular, clusters that share a load-lock chamber are referred to as a line. A substrate for forming a light-emitting device is moved sequentially through the clusters and subjected to each process.

[0031] 2A and 2B are cross-sectional views illustrating a state in which a film is formed on a first base material 1310 using a film formation apparatus 1100 and a mask frame 1170 that can be used in the film formation system of one embodiment of the present invention.

[0032] <Configuration Example of Manufacturing System> The manufacturing system 1000A includes a line 1110, a line 1111 (line 1111a, line 1111b), a line 1112, and a plurality of processing chambers 1101A (see FIG. 1).

[0033] The line 1110 includes a loading device LD, a film forming apparatus 1100A connected to the loading device LD, a film forming apparatus 1100B connected to the film forming apparatus 1100A, a film forming apparatus 1100C connected to the film forming apparatus 1100B, a film forming apparatus 1100D connected to the film forming apparatus 1100C, and an unloading device ULD connected to the film forming apparatus 1100D.

[0034] Line 1111 includes a loading device LD, a processing chamber 1101B connected to the loading device LD, a film forming apparatus 1100A connected to the processing chamber 1101B, a film forming apparatus 1100B connected to the film forming apparatus 1100A, a film forming apparatus 1100C connected to the film forming apparatus 1100B, a film forming apparatus 1100D connected to the film forming apparatus 1100C, and an unloading device ULD connected to the film forming apparatus 1100D.

[0035] The line 1112 includes a loading device LD, a processing chamber 1101B connected to the loading device LD, a film forming apparatus 1100E connected to the processing chamber 1101B, a film forming apparatus 1100F connected to the film forming apparatus 1100E, a sealing chamber SU connected to the film forming apparatus 1100F, and an unloading device ULD connected to the sealing chamber SU.

[0036] Here, the film formation apparatuses 1100A to 1100F each include a device for performing a controlled atmosphere or vacuum process (reduced pressure process). Specifically, the film formation apparatuses 1100A to 1100F include devices for performing a substrate cleaning process, a baking process, a film formation process of an organic compound or an inorganic film, or the like. Alternatively, the film formation apparatuses 1100A to 1100F include devices for performing an etching process, an ashing process, or the like.

[0037] On the other hand, the processing chambers 1101A and 1101B each have an apparatus for performing processing under normal pressure. Specifically, in addition to an apparatus for performing a lithography process, a cleaning apparatus, a baking apparatus, a spin cleaning apparatus, etc. can be applied. The baking apparatus may be a vacuum baking apparatus.

[0038] As the apparatus for performing the lithography process, for example, when a photolithography process is performed, a resin (photoresist) coating apparatus, an exposure apparatus, a developing apparatus, a baking apparatus, etc. may be applied, and when a lithography process using nanoimprinting is performed, a resin (UV curable resin, etc.) coating apparatus, a nanoimprinting apparatus, etc. In addition, depending on the application, a cleaning apparatus, a wet etching apparatus, a coating apparatus, a resist stripping apparatus, etc. may also be applied to the atmospheric pressure process apparatus A.

[0039] The number of film formation apparatuses or processing chambers included in each line may be one or more depending on the purpose. The processing chambers 1101A and 1101B are not limited to processes under atmospheric pressure, and may be controlled to a slightly negative or positive pressure lower than atmospheric pressure. When a plurality of processing chambers 1101A and 1101B are provided, the pressures in the processing chambers 1101A and 1101B may be different from each other.

[0040] Valves for introducing an inert gas (IG) are connected to the loading device LD, the unloading device ULD, the processing chamber 1101A, and the processing chamber 1101B, allowing for control of the inert gas atmosphere. The inert gas may be nitrogen or a noble gas such as argon or helium. Furthermore, it is preferable that the inert gas has a low dew point (for example, -50°C or less). By performing the process in an inert gas atmosphere with a low dew point, it is possible to prevent the incorporation of impurities, thereby enabling the formation of highly reliable organic EL elements.

[0041] The loading device LD, the unloading device ULD, the processing chamber 1101A, and the processing chamber 1101B are preferably connected to other process chambers (film formation chambers) or processing chambers via gate valves, which enable pressure control, control of inert gas species, prevention of cross-contamination, and the like.

[0042] Here, lines 1110, 1111 (lines 1111a and 1111b), and 1112 each include one or more processing chambers and film formation apparatuses. In the processing chambers and film formation apparatuses, the angle θ of the substrate surface relative to the horizontal direction is maintained at 45 degrees or more and 135 degrees or less, preferably 55 degrees or more and 80 degrees or less, or 100 degrees or more and 125 degrees or less. Similarly, movement between the film formation apparatus and the processing chamber, and movement between film formation apparatuses, can be performed while the angle θ of the substrate surface relative to the horizontal direction is maintained at 45 degrees or more and 135 degrees or less, preferably 55 degrees or more and 80 degrees or less, or 100 degrees or more and 125 degrees or less.

[0043] In other words, by having the substrate surface at an angle relative to the horizontal plane, the volume (space) occupied by the process chamber (film formation chamber) or film formation apparatus can be reduced compared to when the substrate surface is positioned horizontally, making it possible to provide a film formation apparatus that is smaller in size and has a smaller footprint.

[0044] In particular, in the processing chamber and film formation apparatus, it is preferable that the angle θ of the substrate surface with respect to the horizontal direction is greater than 90 degrees. In other words, by orienting the substrate surface upward with respect to the direction of gravity (vertical downward), it is possible to make the substrate less likely to bend.

[0045] In the lines 1110, 1111, and 1112, the first substrate 1310 is carried into each line by each carry-in device LD. The first substrate 1310 is carried out from each line by each carry-out device ULD.

[0046] In addition, in the line 1110 and the line 1111, the film forming apparatuses 1100A to 1100D form a film of a film forming material on the transported first base material 1310.

[0047] In addition, in the line 1110 and the line 1111, the film forming apparatus 1100D forms a film of a film forming material on the transported first substrate 1310.

[0048] Furthermore, the film forming apparatus 1100D can form an inorganic film on the transported first base material 1310. Note that, if necessary, a film forming apparatus capable of forming an organic film may be provided between the film forming apparatus 1100D and the carry-out device ULD. For example, a protective film or the like can be formed on the layered structure formed on the base material 1310.

[0049] The processing chamber 1101A also has a function of adjusting the angle of the substrate relative to the horizontal plane, and can perform processes such as resist coating and exposure as necessary.

[0050] By using the function of adjusting the angle of the substrate relative to the horizontal plane, the angle θ of the substrate surface relative to the horizontal direction can be set to be greater than 135 degrees and less than or equal to 180 degrees, preferably greater than or equal to 170 degrees and less than or equal to 180 degrees, and processes such as resist application and exposure can be performed while maintaining this angle.

[0051] In other words, in the resist coating process and exposure process, the substrate is held at a larger angle to the horizontal plane than in the film formation process. Alternatively, the substrate is preferably held as horizontal as possible. By configuring the substrate so that the tilt can be changed as needed, it is possible to form a resist that occupies a small area in the manufacturing system and has minimal coating unevenness.

[0052] In the processing chamber 1101B, a process such as a patterning process is carried out as necessary on the lines 1111 and 1112. For example, processing such as exposure and etching can be carried out.

[0053] In the line 1112, the film forming apparatuses 1100E and 1100F form a film of a film forming material on the transported first substrate 1310. For example, the film forming apparatus 1100F can form a film of an organic material. Furthermore, in addition to the organic material, it can also form a film of a metal material or the like.

[0054] The sealing chamber SU seals the transported first base material 1310 with a sealant. For example, a bonding layer may be formed on the first base material 1310, and the first base material 1310 and a second base material 1370 that has been transported in advance may be bonded together using the bonding layer to form a sealant. Note that the sealing chamber SU may be provided as needed, but is not necessarily required.

[0055] Each of the film forming apparatuses 1100A to 1100F and the sealing chamber SU has an entrance and an exit.

[0056] In order to prevent moisture from adhering to the manufacturing equipment of the manufacturing system 1000A, it is preferable to fill the equipment with an inert gas (such as nitrogen gas) whose dew point is controlled, and more preferably to maintain a reduced pressure. For example, the internal pressure is kept below atmospheric pressure or 1×10 −３ Pa or less, preferably 1×10 −４ Pa or less, more preferably 1×10 −５ It is recommended to set it to Pa or less.

[0057] In addition, while the manufacturing equipment is performing the process, it is preferable to maintain a reduced pressure state using a pressure controller, a valve, etc. Specifically, when the manufacturing equipment is a deposition equipment, the pressure during film formation is preferably maintained at 1×10 −３ Pa or less, preferably 1×10 −４ Pa or less, more preferably 1×10 −５ In the case of a film forming apparatus using a chemical vapor deposition (CVD) method, the pressure should be maintained at 1×10 Pa or less depending on the film forming conditions. −２ Pa or more 1×10 −１ In the case of a film forming apparatus using a sputtering method, the pressure may be maintained at 1×10 Pa or less depending on the film forming conditions. −１ The pressure may be maintained at 0.5 Pa or more and 1 Pa or less.

[0058] The manufacturing system 1000A described in this embodiment may include a plurality of film formation apparatuses, sealing chambers, film formation apparatuses 1100D, and processing chambers. For example, by including a plurality of film formation apparatuses 1100D, a stacked structure can be formed using films formed by vapor deposition.

[0059] In FIG. 1, a manufacturing system 1000A having two lines 1111 (line 1111a and line 1111b) for improving throughput in manufacturing stacked structures with different configurations is shown as an example.

[0060] For example, if there are four types of laminate structures with different configurations, a configuration having three lines 1111 may be used, or one line 1111 may be used multiple times to form laminate structures with different configurations. Specifically, if there are four types of laminate structures with different configurations, one line 1110 and three lines 1111 may be provided to form four types of laminate structures on the same plane. Therefore, the manufacturing system of the present invention is not limited to the configuration shown in FIG. 1. That is, it is sufficient to have at least one line 1111, and multiple lines 1111 may be provided as needed.

[0061] This allows a laminated film in which multiple films are stacked to be formed on the first base material 1310. Furthermore, exposure of the formed film to the atmosphere is minimized, thereby preventing impurities from being mixed in. Furthermore, a manufacturing process with high throughput can be provided.

[0062] In the manufacturing system 1000A, the lines 1110 to 1112 do not need to be individual lines, but may be connected together to form a series of in-line systems.

[0063] <Individual Elements of the Film Forming Apparatus> The following describes the individual elements that make up the manufacturing system 1000 A. Note that these components cannot be clearly separated, and one component may also serve as another component, or may include part of another component.

[0064] <<Film Formation Apparatus 1100>> The film formation apparatus 1100 described in this embodiment includes an evaporation source 1120 (shown as evaporation source 1120A and evaporation source 1120B in the figure) having a function of spraying a film formation material so that the film formation material is adhered to a first substrate 1310, a mask frame 1170 between the first substrate 1310 installed on a substrate support part 1192 and the evaporation source 1120A, a mask frame support part 1115 having a function of supporting the mask frame 1170, and a film formation chamber 1190 in which the evaporation source 1120A and the mask frame support part 1115 are arranged (see FIG. 2A ).

[0065] Here, the surface of the first base material 1310 placed on the base material support part 1192 has an angle θ with respect to the horizontal plane. The angle θ is 45 degrees or more and 90 degrees or less, preferably 55 degrees or more and 80 degrees or less, and more preferably 170 degrees or more and 180 degrees or less. In addition, the evaporation source 1120 is preferably placed parallel to the substrate surface.

[0066] By having the substrate at an angle relative to the horizontal plane, the volume occupied by the process chamber (film formation chamber) or film formation apparatus can be reduced, and a film formation apparatus with a smaller size and footprint can be provided.

[0067] Although two evaporation sources, ie, evaporation source 1120A and evaporation source 1120B, are shown in the figure, the present invention is not limited to this configuration, and the film formation apparatus 1100 may include one or more evaporation sources as necessary.

[0068] The film formation apparatus 1100 may also have a power source 1140. For example, the film formation apparatus 1100 may have a function of moving the first base material 1310 relative to the evaporation source 1120A using the power source 1140. This allows the film formation material ejected from the evaporation source 1120A to be uniformly deposited on the surface of the first base material 1310.

[0069] Furthermore, the film forming apparatus 1100 may use, for example, a power source 1140 to move the mask frame support portion 1115 together with the mask frame 1170 and the first base material 1310 .

[0070] The deposition apparatus 1100 may also have a detector 1198 that detects the position of the mask frame 1170 relative to the first substrate 1310. For example, the first substrate 1310 may be moved and positioned appropriately relative to the mask frame 1170 using the mask frame support 1115.

[0071] The film formation apparatus 1100 may also include an exhaust device 1197 for controlling the pressure in the film formation chamber 1190 and a pipe 1196 for introducing a predetermined gas into the film formation chamber 1190 .

[0072] The film formation apparatus 1100 may also have a door valve 1195 that has a function of allowing the first substrate 1310 to be loaded into and unloaded from the film formation chamber 1190. The door valve 1195 can also be used to load and unload the mask frame 1170.

[0073] The vapor deposition device 1120 may also include a shielding plate 1121 (a shielding plate 1121A and a shielding plate 1121B) that shields the film formation material ejected from the vapor deposition source 1120A. The vapor deposition device 1120 may also include a detector 1122A that detects the amount of the film formation material ejected from the vapor deposition source 1120A per unit time.

[0074] [Atomic Layer Deposition Apparatus] The following describes an atomic layer deposition apparatus that can be used for the film formation apparatus 1100. The atomic layer deposition apparatus has a function of forming films of various film formation materials on the surface of the first substrate 1310, which has an intricate structure on its surface. For example, it has a function of forming a film having a thickness of 1 nm or more and 200 nm or less on the first substrate 1310.

[0075] For example, if a small hole called a pinhole is formed on the surface of the first base material 1310, the film-forming material can be deposited inside the pinhole to fill it. Therefore, a film formed by the ALD method can be suitably used as a sealing film when sealing a laminated structure including an organic layer, for example.

[0076] The ALD method includes an ALD method using heat (thermal ALD method) and an ALD method using plasma (plasma ALD method). In the thermal ALD method, a precursor is reacted using thermal energy, while in the plasma ALD method, a reactive gas in a radical state is reacted with the precursor. The atomic layer deposition apparatus included in this manufacturing system 1000 has the function of being able to form films by both the thermal ALD method and the plasma ALD method.

[0077] In a film formation apparatus using the ALD method, source gases for reaction are sequentially introduced into a chamber, and the sequence of gas introduction is repeated to form a film. For example, by switching between the switching valve 1193a connected to the supply source 1181a and the switching valve 1193b connected to the supply source 1181b, multiple source gases can be introduced alternately without mixing. Specifically, the source gas supplied from the supply source 1181a or the supply source 1181b merges with an inert gas (such as argon or nitrogen) at the junction 1182a or the junction 1182b. Therefore, after introducing a first source gas, the switching valve 1193a is closed to introduce only the inert gas, thereby evacuating the first source gas from the chamber. Subsequently, the switching valve 1193b is opened to introduce a second source gas, thereby sequentially supplying two or more source gases to the chamber. Note that the switching valve may also be referred to as a high-speed valve or an ALD valve.

[0078] Alternatively, instead of introducing an inert gas, the first source gas may be discharged by evacuation and then the second source gas may be introduced. The first source gas is adsorbed onto the substrate surface to form a first monoatomic layer, which then reacts with the second source gas introduced later, resulting in the second monoatomic layer being stacked on the first monoatomic layer to form a thin film. By controlling the gas introduction sequence and repeating this process multiple times until the desired thickness is achieved, a thin film with excellent step coverage can be formed. The thickness of the thin film can be adjusted by the number of times the gas introduction sequence is repeated, allowing for precise film thickness adjustment, making this method suitable for fabricating fine structures.

[0079] 2B shows an example of a film formation apparatus (also referred to as an atomic layer deposition apparatus) using the ALD method. The atomic layer deposition apparatus has an upper electrode 1188, a shower head 1187, a lower electrode 1186, a heater 1199, and a substrate support 1192 inside a film formation chamber (chamber) 1180. The heater 1199 can be provided inside the lower electrode 1186, and the substrate support 1192 can be formed integrally with the lower electrode 1186. A first substrate 1310 is placed on the substrate support 1192.

[0080] The system also has a supply source 1181a for supplying a precursor and a supply source 1181b for supplying a reactive gas, and the piping connected to these has a switching valve 1193a and a switching valve 1193b, respectively. The switching valve 1193a and the switching valve 1193b have the function of controlling the supply amount of the precursor and reactive gas (hereinafter also referred to as source gas) in pulse time. The piping is also connected to a carrier gas piping, and the source gas and carrier gas are joined at a junction 1182a and a junction 1182b, respectively. The carrier gas may be, for example, argon (Ar), helium (He), or nitrogen (N ２ ) etc. can be used.

[0081] The precursor and reactive gases, together with a carrier gas, are supplied from a raw material inlet 1183a and a raw material inlet 1183b to the film formation chamber 1180. The film formation chamber 1180 is connected to an exhaust device 1185 via a raw material outlet 1184 and a main exhaust valve 1194.

[0082] A power supply 1191 capable of applying high frequency power is connected to the upper electrode 1188 via a capacitor 1189. The upper electrode 1188 and the shower head 1187 may be integrally formed. Source gases introduced from source inlets 1183 a and 1183 b are supplied into the film formation chamber 1180 via the shower head 1187.

[0083] The lower electrode 1186 may be connected to a power source capable of applying a constant potential or high frequency, or may be floating or grounded. Similarly, the substrate support 1192 may be floating or grounded.

[0084] When the thermal ALD method is used, the source gas introduced from the source gas inlet 1183a and the source gas inlet 1183b deposits a precursor adsorbed on the surface of the first substrate 1310 in the film formation chamber 1180 by an adsorption reaction due to heat from a heater, thereby forming a desired film on the surface of the first substrate 1310. When the plasma ALD method is used, the reactive gas is converted into a radical state between the upper electrode 1188 and the lower electrode 1186, and is incident on the surface of the first substrate 1310 due to a potential difference (also referred to as an ion sheath) generated between the upper electrode 1188 and the lower electrode 1186. The radicals then react with the precursor adsorbed on the surface of the first substrate 1310, thereby forming a desired film. In addition to heat, an electric field may be applied to the surface of the first substrate 1310 when the source gas is introduced into the film formation chamber to facilitate precursor adsorption.

[0085] Further, although an example in which two supply sources 1181a and 1181b are provided is shown, there is no particular limitation, and three or more supply sources may be provided.

[0086] The film formation is performed by repeating a cycle of precursor introduction, precursor exhaust, reactant introduction, and reactant exhaust, to form a film having a desired thickness.

[0087] If the device formed on the first substrate 1310 is subject to plasma damage, it is not necessary to use plasma, and it is sufficient to appropriately select the precursor, reaction gas, and temperature to perform the desired film formation.

[0088] The supply sources 1181a and 1181b form a source gas from a solid source or a liquid source using a vaporizer, a heating means, etc. Alternatively, the supply sources 1181a and 1181b may be configured to supply a gaseous source.

[0089] In the film formation apparatus shown in FIG. 2B , the first substrate 1310 is loaded onto the substrate support part 1192, the film formation chamber 1180 is sealed, and then the first substrate 1310 is heated by the heater 1199 to a desired temperature (for example, 80° C. or higher, 100° C. or higher, or 150° C. or higher; preferably, room temperature (27° C.) or higher and 100° C. or lower), and a thin film is formed on the substrate surface by repeatedly supplying a source gas and exhausting the gas by the exhaust device 1185.

[0090] 2B , by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181 a and 1181 b, an insulating layer containing a nitride, nitride oxide, oxynitride, or oxide containing one or more elements selected from silicon, hafnium, aluminum, tantalum, zirconium, etc. can be formed. Specifically, an insulating layer containing silicon nitride, silicon nitride oxide, or silicon oxide, an insulating layer containing hafnium oxide, an insulating layer containing aluminum oxide, an insulating layer containing hafnium silicate, or an insulating layer containing aluminum silicate can be formed. Furthermore, by appropriately selecting the raw materials (e.g., volatile organometallic compounds) used in the supply sources 1181 a and 1181 b, a conductive or semiconductor thin film such as a metal layer such as a tungsten layer or a titanium layer, or a nitride layer such as a titanium nitride layer can also be formed.

[0091] For example, when forming a silicon nitride layer using an atomic layer deposition apparatus, a source gas obtained by vaporizing a silicon precursor (organosilane, heterosilane) and a reactive gas such as nitrogen or ammonia can be used, and the reactive gas can be further used as nitrogen radicals obtained in a plasma atmosphere. In the plasma atmosphere, nitrogen or ammonia gas exists in the form of excited atoms / molecules, radicals, or ions. For example, nitrogen plasma containing nitrogen radicals can be generated by applying high frequency waves such as RF or microwaves to nitrogen gas.

[0092] Specific examples of the organic silane include bis(diethylamino)silane (BDEASi), tris(dimethylamino)silane (TDMAS), bis(tert-butylamino)silane (BTBAS), and di(sec-butylamino)silane (DSBAS). Specific examples of the heterosilane include trisilamine (TSA) and neopentasilane (NPS). Other known materials (organosilanes, heterosilanes) may be appropriately selected depending on the film formation temperature conditions.

[0093] Note that an oxidizing agent (e.g., water, oxygen, or ozone) may be mixed into the reactive gas used to form the silicon nitride layer. This allows a silicon nitride oxide layer and a silicon oxynitride layer to be formed. Alternatively, a silicon oxide layer can be formed by using only an oxidizing agent (e.g., water, oxygen, or ozone) as the reactive gas.

[0094] The silicon nitride layer thus formed contains silicon (Si) and nitrogen (N) as its main components, the silicon nitride oxide layer contains silicon (Si), nitrogen (N) and oxygen (O), the silicon oxynitride layer contains silicon (Si), oxygen (O) and nitrogen (N), and the silicon oxide layer contains silicon (Si) and oxygen (O), but also contains trace amounts of carbon (C) and hydrogen (H). Note that the term "main component" refers to a substance that accounts for a relatively large proportion of each component relative to the total.

[0095] Furthermore, for example, when a hafnium oxide layer is formed by an atomic layer deposition apparatus, a raw material gas obtained by vaporizing a liquid containing a solvent and a hafnium precursor compound (hafnium alkoxide solution, typically tetrakis(dimethylamido)hafnium (TDMAH)) and ozone (O ３ In this case, the first source gas supplied from the supply source 1181a is TDMAH, and the second source gas supplied from the supply source 1181b is ozone. The chemical formula of tetrakis(dimethylamido)hafnium is Hf[N(CH ３ ) ２ ] ４ Other liquid materials include tetrakis(ethylmethylamido)hafnium.

[0096] Furthermore, for example, when an aluminum oxide layer is formed by an atomic layer deposition apparatus, a source gas obtained by vaporizing a liquid containing a solvent and an aluminum precursor compound (e.g., trimethylaluminum (TMA)) and H as an oxidizer are used. ２ In this case, the first source gas supplied from the supply source 1181a is TMA, and the second source gas supplied from the supply source 1181b is H. ２ The chemical formula for trimethylaluminum is Al(CH ３ ) ３ Other material liquids include tris(dimethylamido)aluminum, triisobutylaluminum, and aluminum tris(2,2,6,6-tetramethyl-3,5-heptanedionate).

[0097] Furthermore, for example, when a tungsten layer is formed using an atomic layer deposition apparatus, WF ６ Gas and B ２ H ６ The gases are introduced repeatedly to form an initial tungsten layer, and then WF ６ Gas and H ２ The gases are introduced repeatedly in sequence to form a tungsten layer. ２ H ６ Instead of gas, SiH ４ Gases may be used, and the device may be configured so that these gases are controlled by a mass flow controller.

[0098] <<First Material 310>> The first base material 1310 is not particularly limited as long as it has heat resistance sufficient to withstand the manufacturing process and a thickness and size that are applicable to a manufacturing apparatus.

[0099] The first substrate 1310 may also include various functional layers. For example, functional circuits, functional elements, optical elements, functional films, etc., or layers containing a plurality of these may be used. Specifically, pixel circuits, pixel drive circuits, display elements, color filters, moisture-proof films, etc., of known display devices, or layers containing a plurality of these may be used.

[0100] The first base material 1310 can be made of a material including an organic material, an inorganic material, or a composite material of an organic material and an inorganic material.

[0101] For example, inorganic materials such as glass, silicon, ceramics, or metals can be used for the first substrate 1310 .

[0102] Specifically, alkali-free glass, soda-lime glass, crystal glass, silicon, or the like can be used for the first base material 1310 .

[0103] Specifically, an inorganic oxide film, an inorganic nitride film, an inorganic oxynitride film, silicon, or the like can be used for the first base material 1310. For example, silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, silicon, or the like can be used for the first base material 1310.

[0104] Alternatively, the first base material 1310 can be made of an organic material such as a resin, a resin film, or a plastic.

[0105] Specifically, a resin film or plate made of polyester, polyolefin, polyamide, polyimide, polycarbonate, acrylic resin, or the like can be used for first base material 1310 .

[0106] For example, the first base material 1310 can be a thin glass plate or a composite material in which a film of an inorganic material or the like is attached to a resin film or the like.

[0107] For example, the first base material 1310 can be a composite material in which fibrous or particulate metal, glass, inorganic material, or the like is dispersed in a resin film.

[0108] For example, the first base material 1310 can be a composite material in which fibrous or particulate resin or an organic material is dispersed in an inorganic material.

[0109] Furthermore, a single-layer material or a laminated material in which multiple layers are stacked can be used for the first base material 1310. For example, a laminated material in which an insulating layer or the like that prevents diffusion of materials and impurities contained in the materials is stacked can be used for the first base material 1310.

[0110] Specifically, a laminated material made of glass and one or more films selected from a silicon oxide film, a silicon nitride film, a silicon oxynitride film, or the like that prevent the diffusion of impurities contained in the glass can be applied to the first substrate 1310.

[0111] <<Mask Frame Supporting Section 1115>> The mask frame supporting section 1115 has a function of supporting the mask frame 1170. The mask frame supporting section 1115 may also have a function of moving the mask frame relatively to the deposition source 1120A.

[0112] For example, a structure for gripping or supporting the vicinity of the end of the mask frame 1170 can be used for the mask frame support portion 1115. Specifically, a member with a clamping mechanism or an L-shaped or other supporting member can be used. Furthermore, a plurality of structures for gripping or supporting the mask frame 1170 may be provided. Specifically, when the mask frame 1170 has a rectangular shape, the vicinity of the four corners of the mask frame 1170 may be supported.

[0113] Furthermore, for example, the mask frame support 1115 may have a function of changing the angle of the first base member 1310 with respect to the horizontal plane. The power source 1140 can be used to drive this function. The power source 1140 can also be used to move the mask frame support 1115 relative to the evaporation source 1120A. Specifically, the mask frame support 1115 may be moved using a servo motor, a stepping motor, or an air cylinder.

[0114] Specifically, the angle θ of the surface of the first base material 1310 placed on the mask frame support part 1115 with respect to the horizontal plane is preferably greater than 135 degrees and less than or equal to 180 degrees, more preferably greater than or equal to 170 degrees and less than or equal to 180 degrees. The mask frame support part 1115 may be rotated above the deposition source 1120A or may be moved across above the deposition source 1120A.

[0115] <<Mask Frame 1170>> The mask frame 1170 has a shielding region that functions to block the film-forming material, and an opening region surrounded by the shielding region.

[0116] The deposition apparatus 1100 includes one or more deposition sources, such as a deposition source 1120A and a deposition source 1120B.

[0117] The same material may be ejected from the evaporation source 1120 A and the evaporation source 1120 B. This allows the thickness of the film material deposited on the surface of the first base material 1310 per unit time to be increased.

[0118] Different materials may be ejected from the evaporation source 1120A and the evaporation source 1120B. This allows a film containing a mixture of different materials to be formed on the surface of the first base material 1310. In other words, co-evaporation can be performed.

[0119] The evaporation source 1120A has a function of ejecting a film formation material. For example, it is preferable that the evaporation source 1120A has directivity in the ejection direction of the film formation material. This can improve the use efficiency of the film formation material.

[0120] Specifically, a point-source evaporation source or a linear-source evaporation source can be used as the evaporation source 1120A. Alternatively, an evaporation source in which point sources are arranged in a line or a matrix, or an evaporation source in which vaporized film formation material is ejected from a slit can be used.

[0121] The film formation apparatus 1100 may also have a function of moving the evaporation source 1120A relative to the substrate support unit 1192. For example, a film may be formed while the evaporation source 1120A is scanned relative to the first substrate 1310 using a power source. Note that the evaporation source 1120 is preferably installed parallel to the substrate support unit 1192.

[0122] <<Film Forming Chamber 1190>> The film forming chamber 1190 can reduce the internal pressure to below atmospheric pressure. −３ Pa or less.

[0123] The exhaust device 1197 can reduce the pressure inside the film formation chamber 1190. For example, a mechanical pump, a turbo pump, a cryopump, or the like can be used as the exhaust device 1197.

[0124] The film formation chamber 1190 can be filled with gas, and a pipe 1196 can supply, for example, nitrogen gas to the film formation chamber.

[0125] Embodiment Mode 2 In this embodiment mode, a structure of a light-emitting device using the organic compound shown in Embodiment Mode 1 will be described with reference to FIGS. 3A to 3E.

[0126] <Basic Structure of Light-Emitting Device> The basic structure of a light-emitting device will be described. Fig. 3A shows a light-emitting device having a structure (single structure) in which an organic compound layer including a light-emitting layer is disposed between a pair of electrodes. Specifically, the light-emitting device shown in Fig. 3A has a first electrode 101, a second electrode 102, an organic compound layer 103, and a cap layer 107.

[0127] Specifically, an organic compound layer 103 is provided on a first electrode 101, a second electrode 102 is provided on the organic compound layer 103, and a cap layer 107 is provided on the second electrode 102 in this order.

[0128] 3B shows a light-emitting device having a stacked structure (tandem structure) in which a plurality of organic compound layers (organic compound layer 103a, organic compound layer 103b) each having a layer containing a light-emitting substance (two layers in FIG. 3B) are disposed between a pair of electrodes, and a charge generation layer 106 is disposed between the organic compound layers 103. A light-emitting device having a tandem structure can realize a highly efficient light-emitting device without changing the amount of current.

[0129] The charge generation layer 106 has a function of injecting electrons into one organic compound layer (the organic compound layer 103 a or the organic compound layer 103 b) and injecting holes into the other organic compound layer (the organic compound layer 103 b or the organic compound layer 103 a) when a potential difference is generated between the first electrode 101 and the second electrode 102. Therefore, in Figure 3B, when a voltage is applied to the first electrode 101 so that the potential thereof is higher than that of the second electrode 102, electrons are injected from the charge generation layer 106 into the organic compound layer 103 a and holes are injected into the organic compound layer 103 b.

[0130] Note that, in terms of light extraction efficiency, the charge generation layer 106 preferably has a light-transmitting property to visible light (specifically, the transmittance of the charge generation layer 106 to visible light is 40% or more). Furthermore, the charge generation layer 106 functions even if it has lower conductivity than the first electrode 101 and the second electrode 102.

[0131] 3C shows a stacked structure of the organic compound layer 103 of the light-emitting device according to one embodiment of the present invention. In this case, the first electrode 101 functions as an anode, and the second electrode 102 functions as a cathode. The organic compound layer 103 has a structure in which a hole injection layer 111, a hole transport layer 112, a light-emitting layer 113, an electron transport layer 114, and an electron injection layer 115 are sequentially stacked over the first electrode 101. The light-emitting layer 113 may have a stacked structure of multiple light-emitting layers that emit different colors. For example, a light-emitting layer containing a red light-emitting substance, a light-emitting layer containing a green light-emitting substance, and a light-emitting layer containing a blue light-emitting substance may be stacked, or a layer containing a carrier-transporting material may be interposed between the stacked layers. Alternatively, a light-emitting layer containing a yellow light-emitting substance and a light-emitting layer containing a blue light-emitting substance may be combined. However, the stacked structure of the light-emitting layer 113 is not limited to the above. For example, the light-emitting layer 113 may have a structure in which multiple light-emitting layers emitting the same light-emitting color are stacked. For example, a first light-emitting layer containing a blue light-emitting material and a second light-emitting layer containing a blue light-emitting material are stacked, or a layer containing a carrier transport material is interposed between the layers. A structure in which multiple light-emitting layers emitting the same light-emitting color are stacked may have higher reliability than a single-layer structure. Even in a tandem structure such as that shown in FIG. 3B , in which multiple EL layers are included, each EL layer is stacked sequentially from the anode side as described above. Furthermore, when the first electrode 101 is a cathode and the second electrode 102 is an anode, the stacking order of the organic compound layers 103 is reversed. Specifically, the structure includes an electron injection layer 111 on the first electrode 101 (cathode), an electron transport layer 112, an light-emitting layer 113, a hole transport layer 114, and a hole injection layer 115.

[0132] The light-emitting layers 113 included in the organic compound layers (organic compound layer 103, organic compound layer 103a, organic compound layer 103b) each contain a light-emitting substance and an appropriate combination of multiple substances, and can be configured to emit fluorescent or phosphorescent light of a desired emission color. The light-emitting layer 113 may also have a stacked structure with different emission colors. In this case, different materials may be used for the light-emitting substance and other substances used in each stacked light-emitting layer. Alternatively, a structure in which different emission colors are emitted from the multiple organic compound layers (organic compound layer 103a, organic compound layer 103b) shown in FIG. 3B may also be used. In this case, different materials may be used for the light-emitting substance and other substances used in each light-emitting layer.

[0133] In addition, in a light-emitting device according to one embodiment of the present invention, for example, the first electrode 101 shown in FIG. 3C may be a reflective electrode, the second electrode 102 may be a semi-transmissive and semi-reflective electrode, and a micro-optical resonator (microcavity) structure may be formed. This allows light emitted from the light-emitting layer 113 included in the organic compound layer 103 to resonate between the two electrodes, thereby enhancing the intensity of light emitted from the second electrode 102. Therefore, high definition can be easily achieved. Furthermore, the intensity of light emitted from a specific wavelength in the front direction can be enhanced, thereby reducing power consumption.

[0134] In addition, when the first electrode 101 of the light-emitting device is a reflective electrode having a laminated structure of a reflective conductive material and a light-transmitting conductive material (transparent conductive film), optical adjustment can be performed by controlling the film thickness of the transparent conductive film. Specifically, it is preferable to adjust the optical distance (product of film thickness and refractive index) between the first electrode 101 and the second electrode 102 to mλ / 2 (where m is an integer of 1 or greater) or in the vicinity thereof, for the wavelength λ of light obtained from the light-emitting layer 113.

[0135] Furthermore, in order to amplify the desired light (wavelength: λ) obtained from the light-emitting layer 113, it is preferable to adjust the optical distance from the first electrode 101 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained and the optical distance from the second electrode 102 to the region (light-emitting region) in the light-emitting layer 113 where the desired light is obtained to be (2m'+1)λ / 4 (where m' is an integer of 1 or more) or close to that. Note that the light-emitting region referred to here refers to a recombination region of holes and electrons in the light-emitting layer 113.

[0136] By performing such optical adjustment, the spectrum of the specific monochromatic light obtained from the light-emitting layer 113 can be narrowed, and light emission with good color purity can be obtained.

[0137] However, in the above case, the optical distance between the first electrode 101 and the second electrode 102 can be strictly defined as the total thickness from the reflective region of the first electrode 101 to the reflective region of the second electrode 102. However, since it is difficult to precisely determine the reflective regions of the first electrode 101 and the second electrode 102, the above-mentioned effect can be sufficiently achieved by assuming any position of the first electrode 101 and the second electrode 102 as the reflective region. Furthermore, the optical distance between the first electrode 101 and the light-emitting layer from which desired light is obtained can be strictly defined as the optical distance between the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained. However, since it is difficult to precisely determine the reflective region of the first electrode 101 and the light-emitting region of the light-emitting layer from which desired light is obtained, the above-mentioned effect can be sufficiently achieved by assuming any position of the first electrode 101 as the reflective region and any position of the light-emitting layer from which desired light is obtained as the light-emitting region.

[0138] The light-emitting device shown in Figure 3D has a tandem structure. The tandem structure allows for a light-emitting device capable of emitting light with high brightness. Furthermore, the tandem structure reduces the current required to achieve the same brightness compared to a single structure, thereby improving reliability. Furthermore, power consumption can be reduced.

[0139] The light-emitting device shown in FIG. 3E is an example of the tandem-structure light-emitting device shown in FIG. 3B , and as shown in the figure, has a structure in which three organic compound layers (organic compound layer 103a, organic compound layer 103b, organic compound layer 103c) are stacked with a charge generation layer (charge generation layer 106a, charge generation layer 106b) sandwiched between them. Each of the three organic compound layers (organic compound layer 103a, organic compound layer 103b, organic compound layer 103c) has a light-emitting layer (light-emitting layer 113a, light-emitting layer 113b, light-emitting layer 113c), and the light-emitting colors of the light-emitting layers can be freely combined. For example, the light-emitting layer 113a can be blue, the light-emitting layer 113b can be red, green, or yellow, and the light-emitting layer 113c can be blue. Alternatively, the light-emitting layer 113a can be red, the light-emitting layer 113b can be blue, green, or yellow, and the light-emitting layer 113c can be red.

[0140] In the above-described light-emitting device according to one embodiment of the present invention, the second electrode 102 is a light-transmitting electrode (such as a transparent electrode or a semi-transmitting / semi-reflective electrode). When the light-transmitting electrode is a transparent electrode, the visible light transmittance of the transparent electrode is set to 40% or more. When the semi-transmitting / semi-reflective electrode is used, the visible light reflectance of the semi-transmitting / semi-reflective electrode is set to 20% or more and 80% or less, preferably 40% or more and 70% or less. Furthermore, these electrodes have a resistivity of 1×10 −２ It is preferable that the resistance is Ωcm or less.

[0141] In the above-described light-emitting device according to one embodiment of the present invention, when the first electrode 101 is a reflective electrode (a reflective electrode), the reflectivity of the reflective electrode for visible light is set to 40% to 100%, preferably 70% to 100%. −２ It is preferable that the resistance is Ωcm or less.

[0142] <Specific Structure of Light-Emitting Device> Next, a specific structure of a light-emitting device according to one embodiment of the present invention will be described. Here, the description will be made with reference to FIG. 3D , which has a tandem structure. The single-structure light-emitting devices shown in FIGS. 3A and 3C also have the same organic compound layer structure. When the light-emitting device shown in FIG. 3D has a microcavity structure, the first electrode 101 is formed as a reflective electrode, and the second electrode 102 is formed as a semi-transmissive and semi-reflective electrode. Therefore, the electrode layers can be formed as a single layer or a stack using a single or multiple desired electrode materials. The second electrode 102 is formed by selecting an appropriate material after the organic compound layer 103b is formed.

[0143] <Materials of the Light-Emitting Device> Each component of the light-emitting device will be described below.

[0144] <<Cap Layer>> The organic compound used in the cap layer 107, when formed, preferably has an ordinary refractive index (n o ) of 1.90 or more, preferably 2.00 or more, at a wavelength of 450 nm. Also, the ordinary refractive index (n o ) at a wavelength of 520 nm is preferably 1.80 or more, preferably 1.9 or more. Also, the ordinary refractive index (n o ) at a wavelength of 630 nm is preferably 1.75 or more, preferably 1.85 or more. By increasing the ordinary refractive index (n o ), it is possible to suppress total reflection of light from the organic compound layer 103 at the cap layer 107, thereby improving the light extraction efficiency.

[0145] Furthermore, the extraordinary refractive index (ne) at a wavelength of 450 nm is preferably 1.80 or less, and more preferably 1.70 or less. The extraordinary refractive index (ne) at a wavelength of 520 nm is preferably 1.70 or less, and more preferably 1.60 or less. The extraordinary refractive index (ne) at a wavelength of 630 nm is preferably 1.70 or less, and more preferably 1.60 or less. By reducing the extraordinary refractive index (ne), the anisotropy of the refractive index tends to increase.

[0146] Furthermore, if the difference between the ordinary refractive index (no) and the extraordinary refractive index (ne) (Δn=|no-ne|) at any wavelength between 360 nm and 830 nm (for example, three wavelengths of 450 nm, 520 nm, or 630 nm), preferably at all three wavelengths, is 0.1 or more and 0.4 or less, the anisotropy of the refractive index can be further increased. Furthermore, it is preferable that Δn=|no-ne| is 0.2 or more and 0.4 or less, and more preferably 0.3 or more and 0.4 or less.

[0147] Here, the difference between the ordinary refractive index (no) and the extraordinary refractive index (ne) (Δn = |no - ne|) can be used as an index of anisotropy in the refractive index. In the visible light range (360 nm or more and 830 nm or less), the larger Δn is, that is, the larger the anisotropy of the refractive index tends to be. In order to increase Δn, the ordinary refractive index (no) can be increased or the extraordinary refractive index (ne) can be decreased.

[0148] By increasing the anisotropy of the refractive index in the cap layer 107, light emitted from the organic compound layer 103 can be extracted with high efficiency.

[0149] Furthermore, the cap layer 107 preferably has a small ordinary light extinction coefficient (k) of 0.2 or less, preferably 1×10 in the visible range (450 nm to 630 nm). −２ More preferably, 1×10 −４ When the ordinary light extinction coefficient is small, light emitted from the organic compound layer 103 can be extracted to the outside without being absorbed, making it possible to provide a highly efficient element.

[0150] In addition, considering the extraction efficiency, it is desirable that the ordinary extinction coefficient be below the lower detection limit of the measuring device. On the other hand, if there is some absorption at wavelengths of 400 nm or less (if the ordinary extinction coefficient is not 0), ultraviolet light (light with a wavelength shorter than visible light) from outside the light-emitting device can be absorbed in the cap layer, potentially reducing damage caused by ultraviolet light to the structure below the cap layer. In this way, when considering ultraviolet absorption, it is desirable that the ordinary extinction coefficient at wavelengths of 400 nm or less be above the lower detection limit. For example, it is desirable that the ordinary extinction coefficient at 365 nm be 0.1 or more, more preferably 0.2 or more.

[0151] Examples of organic compounds that can be used as the cap layer 107 are shown below.

[0152] Applicable organic compounds include compounds having heterocycles. Examples of heteroatoms (also referred to as heteroatoms) contained in heterocycles include nitrogen, oxygen, and sulfur. The presence of heteroatoms may increase the ordinary light refractive index no or the glass transition temperature Tg. The heterocycle preferably contains a five-membered heteroaromatic ring skeleton containing nitrogen, oxygen, or sulfur in order to improve the refractive index. For example, heterocycles containing a pyrrole skeleton, a furan skeleton, a thiophene skeleton, or an azole (e.g., imidazole, oxazole, thiazole, oxadiazole, or triazole) skeleton are preferred. In particular, compounds having an atom with a large atomic radius, such as sulfur, in their molecular structure are expected to have a high refractive index. Furthermore, a structure in which the fused ring contains a heteroatom is preferred because it simultaneously has the effect of improving Tg due to the fused ring and the effect of improving the refractive index due to the heteroatom. That is, the heterocycle is preferably a fused heteroaromatic ring having a five-membered ring containing nitrogen, oxygen, and sulfur, such as a carbazole ring, a dibenzofuran ring, a benzonaphthofuran ring, a dibenzothiophene ring, a benzonaphthothiophene ring, a benzoxazole ring, and a benzothiazole ring. For these reasons, in one embodiment of the present invention, an organic compound having the heterocycle and a phenanthrene ring described above is suitable for the capping layer 107. Furthermore, an organic compound having the heterocycle and two to four naphthalene rings described above is particularly suitable for the capping layer 107.

[0153] Applicable organic compounds include compounds having a carbazole ring (also referred to as carbazole compounds), particularly organic compounds having a carbazole ring and a phenanthrene ring, and particularly organic compounds having a carbazole ring and two to four naphthalene rings.

[0154] The carbazole compound can increase the refractive index of the formed film, and since it has a carbazole skeleton, it can increase the refractive index and anisotropy compared to films that do not have this skeleton.

[0155] Furthermore, organic compounds suitable for the cap layer 107 can further increase their refractive index by including a fused ring within the molecule. For example, they preferably include a phenanthrene ring or a naphthalene ring. These rings are preferably bonded to a carbazole ring as a substituent. Although one phenanthrene ring or one naphthalene ring is sufficient within a molecule, having two or more phenanthrene rings can further increase the refractive index. For example, a binaphthalene structure in which two naphthalene rings are directly linked is preferred. Furthermore, including a binaphthalene structure as a substituent can increase the glass transition temperature (Tg) of the compound. Furthermore, including a structure in which the 2-position of naphthalene is bonded to another group (i.e., including a 2-naphthyl group) can further increase the refractive index. This is because the density of the organic compound in the formed film increases. In particular, a partial structure containing a 2,2'-binaphthalene structure in which the 2-positions of naphthalene are bonded to each other can further increase the refractive index. However, without being limited thereto, for example, when the 1-position of naphthalene contains a structure bonded to another group (i.e., contains a 1-naphthyl group), Tg can be improved.

[0156] The organic compound used for the cap layer 107 is preferably an organic compound represented by the following general formula (C1).

[0157]

[0158] However, in general formula (C1), R １ ~R ４each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (C1-1): ５ ~R ８ each independently represents any one of hydrogen (including deuterium), a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms, a substituted or unsubstituted cycloalkyl group having 3 to 6 carbon atoms, a substituted or unsubstituted aromatic hydrocarbon group having 6 to 30 carbon atoms, and a substituent represented by the following general formula (C1-2): ５ ~R ８ At least one of Ar is a substituent represented by the following general formula (C1-2): １１ represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted divalent aromatic heterocyclic group having 3 to 30 carbon atoms; Ar １２ represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms, or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms. n11 represents an integer of 0 to 3, and n12 represents an integer of 1 to 3.

[0159]

[0160] However, in the general formula (C1-1) and the general formula (C1-3), Ar １３ , Ar １５ , and Ar １６ each independently represents a substituted or unsubstituted divalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms; Ar １４ , and Ar １７ each independently represents a substituted or unsubstituted monovalent aromatic hydrocarbon group having 6 to 30 carbon atoms or a substituted or unsubstituted monovalent aromatic heterocyclic group having 3 to 30 carbon atoms; Ar １５ , Ar １６ and Ar １７At least two of n13, n15, and n16 represent an integer of 0 to 3, and n14 and n17 each independently represent an integer of 1 to 3. n15 + n16 + n17 ≧ n13 + n14.

[0161] In the general formula (G1), the general formula (G1-1), and the general formula (G1-3), Ar １１ , Ar １３ , Ar １５ , and Ar １６ is an arylene group, and Ar １２ , Ar １４ , and Ar １７ is an aryl group. When n11 is 2 or more, a plurality of Ar １１ may be the same substituent or may be different substituents. １２ ~Ar １７ The same applies when there are multiple Ar １１ ~Ar １７ is preferably composed of carbon and hydrogen (including deuterium). １２ , Ar １４ , or Ar １７ may be hydrogen (including deuterium).

[0162] Specific examples of the organic compound represented by the general formula (G1) are shown below. Note that the organic compound represented by the general formula (G1) includes the organic compound described in Embodiment 1.

[0163]

[0164] Other examples of materials that can be used for the cap layer include 5,5′-diphenyl-2,2′-di-5H-[1]benzothieno[3,2-c]carbazole (abbreviation: BisBTc), 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzothiophene) (abbreviation: DBT3P-II), etc.

[0165] <Light-emitting layer> The light-emitting layers (113, 113a, 113b) are layers containing a light-emitting substance. Note that, as the light-emitting substance that can be used for the light-emitting layers (113, 113a, 113b), a substance that emits light of a color such as blue, purple, blue-purple, green, yellow-green, yellow, orange, or red can be appropriately used. Furthermore, when a plurality of light-emitting layers are provided, a structure that emits different light colors (for example, white light emission obtained by combining light-emitting colors that are complementary to each other) can be obtained by using different light-emitting substances for each light-emitting layer. Furthermore, a stacked structure in which one light-emitting layer contains different light-emitting substances may be used.

[0166] The light-emitting layers (113, 113a, 113b) may contain one or more organic compounds (host materials, etc.) in addition to the light-emitting substance (guest material).

[0167] When a plurality of host materials are used in the light-emitting layer (113, 113a, 113b), it is preferable to use a substance having a larger energy gap than the energy gaps of the existing guest material and the first host material as the newly added second host material. Furthermore, it is preferable that the lowest singlet excitation energy level (S1 level) of the second host material is higher than the S1 level of the first host material, and the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the guest material. Furthermore, it is preferable that the lowest triplet excitation energy level (T1 level) of the second host material is higher than the T1 level of the first host material. With this structure, an exciplex can be formed using two types of host materials. To efficiently form an exciplex, it is particularly preferable to combine a compound that easily accepts holes (hole-transporting material) with a compound that easily accepts electrons (electron-transporting material). Furthermore, this structure can simultaneously achieve high efficiency, low voltage, and long life.

[0168] As the organic compound used as the host material (including the first host material and the second host material), as long as it satisfies the conditions for a host material used in an emitting layer, examples thereof include organic compounds such as hole-transporting materials that can be used in the hole-transporting layer (112, 112a, 112b) described above, or electron-transporting materials that can be used in the electron-transporting layer (114, 114a, 114b) described below. The organic compound may also be an exciplex composed of multiple organic compounds (the first host material and the second host material described above). An exciplex (also referred to as an exciplex) that forms an excited state with multiple organic compounds has an extremely small difference between the S1 level and the T1 level and functions as a TADF material that can convert triplet excitation energy to singlet excitation energy. Furthermore, as a combination of multiple organic compounds that form an exciplex, for example, one of the compounds has a π-electron-deficient heteroaromatic ring and the other has a π-electron-rich heteroaromatic ring. As a combination for forming an exciplex, one of the compounds may be a phosphorescent material such as an iridium-, rhodium-, or platinum-based organometallic complex or a metal complex. The organic compounds described in Embodiment 1 have electron-transporting properties and can therefore be effectively used as the first host material. In addition, they have hole-transporting properties and can therefore also be used as the second host material.

[0169] The light-emitting substance that can be used in the light-emitting layer (113, 113a, 113b) is not particularly limited, and a light-emitting substance that converts singlet excitation energy into light emission in the visible light region, or a light-emitting substance that converts triplet excitation energy into light emission in the visible light region can be used.

[0170] [Light-emitting substance that converts singlet excitation energy into light emission] Examples of light-emitting substances that can be used in the light-emitting layers (113, 113a, 113b) and that convert singlet excitation energy into light emission include the following fluorescent substances (fluorescent light-emitting substances). Examples include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. Pyrene derivatives are particularly preferred because of their high light emission quantum yield. Specific examples of the pyrene derivative include N,N'-bis(3-methylphenyl)-N,N'-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6mMemFLPAPrn), N,N'-diphenyl-N,N'-bis[4-(9-phenyl-9H-fluoren-9-yl)phenyl]pyrene-1,6-diamine (abbreviation: 1,6FLPAPrn), N,N'-bis(dibenzofuran-2-yl)-N,N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6FrAPrn), and N,N'-bis(dibenzothiophen-2-yl)-N, Examples thereof include N'-diphenylpyrene-1,6-diamine (abbreviation: 1,6ThAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-6-amine] (abbreviation: 1,6BnfAPrn), N,N'-(pyrene-1,6-diyl)bis[(N-phenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-02), and N,N'-(pyrene-1,6-diyl)bis[(6,N-diphenylbenzo[b]naphtho[1,2-d]furan)-8-amine] (abbreviation: 1,6BnfAPrn-03).

[0171] In addition, 5,6-bis[4-(10-phenyl-9-anthryl)phenyl]-2,2′-bipyridine (abbreviation: PAP2BPy), 5,6-bis[4′-(10-phenyl-9-anthryl)biphenyl-4-yl]-2,2′-bipyridine (abbreviation: PAPP2BPy), N,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine (abbreviation: YGA2S), 4-(9H-carbazol-9-yl)phenyl]- N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'-(9,10-diphenyl-2-anthryl)triphenylamine (abbreviation: 2YGAPPA), N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine (abbreviation: PCAPA), 4-(10-phenyl-9-anthryl)-4'- (9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPA), 4-[4-(10-phenyl-9-anthryl)phenyl]-4'-(9-phenyl-9H-carbazol-3-yl)triphenylamine (abbreviation: PCBAPBA), perylene, 2,5,8,11-tetra-tert-butylperylene (abbreviation: TBP), N,N''-(2-tert-butylanthracene-9,10-diyldi-4,1-phenyl) N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: 2PCAPPA), N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPPA), and the like can be used.

[0172] Further, N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine (abbreviation: 2PCABPhA), N-(9,10-diphenyl-2-anthryl)-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPAPA), N-[9,10-bis(biphenyl-2-yl)-2-anthryl]-N,N',N'-triphenyl-1,4-phenylenediamine (abbreviation: 2DPABPhA), 9,10-bis(biphenyl-2-yl)-N-[ 4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine (abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine (abbreviation: DPhAPhA), Coumarin 545T, N,N'-diphenylquinacridone (abbreviation: DPQd), rubrene, 5,12-bis(biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT), 2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinit (abbreviation: DCM1), 2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCM2), N,N,N',N'-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation: p-mPhTD), 7,14-diphenyl-N,N,N',N'-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine (abbreviation: p-mPhA FD), 2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTI), 2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: DCJTB), 2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile (abbreviation: BisDCM), 2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile (abbreviation: BisDCJ™), 1,6BnfAPrn-0 Examples of suitable compounds include N,N'-diphenyl-N,N'-bis(9-phenyl-9H-carbazol-2-yl)naphtho[2,3-b;6,7-b']bisbenzofuran-3,10-diamine (abbreviated as 3,10PCA2Nbf(IV)-02), 3,10-bis[N-(dibenzofuran-3-yl)-N-phenylamino]naphtho[2,3-b;6,7-b']bisbenzofuran (abbreviated as 3,10FrA2Nbf(IV)-02), and the like. In particular, pyrene diamine compounds such as 1,6FLPAPrn, 1,6mMemFLPAPrn, and 1,6BnfAPrn-03 can be used.

[0173] [Light-Emitting Substance Converting Triplet Excitation Energy into Light Emission] Next, examples of light-emitting substances that convert triplet excitation energy into light emission and that can be used in the light-emitting layer 113 include phosphorescent substances (phosphorescent light-emitting substances) and thermally activated delayed fluorescence (TADF) materials that exhibit thermally activated delayed fluorescence.

[0174] A phosphorescent material refers to a compound that exhibits phosphorescence but does not exhibit fluorescence at a temperature range from low temperature (e.g., 77 K) to room temperature (i.e., 77 K to 313 K). The phosphorescent material preferably contains a metal element with a large spin-orbit interaction, such as an organometallic complex, a metal complex (platinum complex), or a rare earth metal complex. Specifically, a transition metal element is preferred, and a platinum group element (ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os), iridium (Ir), or platinum (Pt)) is particularly preferred. Among these, iridium is preferred because it can increase the transition probability associated with the direct transition between the singlet ground state and the triplet excited state.

[0175] [Phosphorescent Substance (450 nm to 570 nm: Blue or Green)] Examples of phosphorescent substances that exhibit blue or green and have an emission spectrum with a peak wavelength of 450 nm to 570 nm include the following substances.

[0176] For example, tris{2-[5-(2-methylphenyl)-4-(2,6-dimethylphenyl)-4H-1,2,4-triazol-3-yl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(mpptz-dmp) ３ ]), tris(5-methyl-3,4-diphenyl-4H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Mptz) ３ ]), tris[4-(3-biphenyl)-5-isopropyl-3-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPrptz-3b) ３ ]), tris[3-(5-biphenyl)-5-isopropyl-4-phenyl-4H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(iPr5btz) ３ ]), organometallic complexes having a 4H-triazole ring such as tris[3-methyl-1-(2-methylphenyl)-5-phenyl-1H-1,2,4-triazolato]iridium(III) (abbreviation: [Ir(Mptz1-mp) ３ ]), tris(1-methyl-5-phenyl-3-propyl-1H-1,2,4-triazolato)iridium(III) (abbreviation: [Ir(Prptz1-Me) ３ organometallic complexes having a 1H-triazole ring such as fac-tris[1-(2,6-diisopropylphenyl)-2-phenyl-1H-imidazole]iridium(III) (abbreviation: [Ir(iPrpim) ３ ]), tris[3-(2,6-dimethylphenyl)-7-methylimidazo[1,2-f]phenanthridinato]iridium(III) (abbreviation: [Ir(dmpimpt-Me) ３]), organometallic complexes having an imidazole ring such as bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), bis[2-(4',6'-difluorophenyl)pyridinato-N,C2']iridium(III) picolinate (abbreviation: FIrpic), bis{2-[3',5'-bis(trifluoromethyl)phenyl]pyridinato-N,C2']iridium(III) tetrakis(1-pyrazolyl)borate (abbreviation: FIr6), ２’} Iridium(III) picolinate (abbreviation: [Ir(CF ３ ppy) ２ (pic)]), bis[2-(4',6'-difluorophenyl)pyridinato-N,C ２’ ] Examples include organometallic complexes having a phenylpyridine derivative having an electron-withdrawing group as a ligand, such as iridium(III) acetylacetonate (abbreviation: FIr(acac)).

[0177] [Phosphorescent Substance (495 nm or More and 590 nm or Less: Green or Yellow)] Examples of phosphorescent substances that exhibit green or yellow and have an emission spectrum with a peak wavelength of 495 nm or more and 590 nm or less include the following substances.

[0178] For example, tris(4-methyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ３ ]), tris(4-t-butyl-6-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ３ ]), (acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(mppm) ２ (acac)]), (acetylacetonato)bis(6-tert-butyl-4-phenylpyrimidinato)iridium(III) (abbreviation: [Ir(tBuppm) ２ (acac)]), (acetylacetonato)bis[6-(2-norbornyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(nbppm) ２(acac)]), (acetylacetonato)bis[5-methyl-6-(2-methylphenyl)-4-phenylpyrimidinato]iridium(III) (abbreviation: [Ir(mpmppm) ２ (acac)]), (acetylacetonato)bis{4,6-dimethyl-2-[6-(2,6-dimethylphenyl)-4-pyrimidinyl-κN]phenyl-κC}iridium(III) (abbreviation: [Ir(dmppm-dmp) ２ (acac)]), (acetylacetonato)bis(4,6-diphenylpyrimidinato)iridium(III) (abbreviation: [Ir(dppm) ２ organometallic iridium complexes having a pyrimidine ring, such as (acetylacetonato)bis(3,5-dimethyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-Me) ２ (acac)]), (acetylacetonato)bis(5-isopropyl-3-methyl-2-phenylpyrazinato)iridium(III) (abbreviation: [Ir(mppr-iPr) ２ organometallic iridium complexes having a pyrazine ring, such as tris(2-phenylpyridinato-N,C(acac)]); ２’ ) Iridium(III) (abbreviation: [Ir(ppy) ３ ]), bis(2-phenylpyridinato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(ppy) ２ (acac)]), bis(benzo[h]quinolinato)iridium(III) acetylacetonate (abbreviation: [Ir(bzq) ２ (acac)]), tris(benzo[h]quinolinato)iridium(III) (abbreviation: [Ir(bzq) ３ ]), tris(2-phenylquinolinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(pq) ３ ]), bis(2-phenylquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(pq) ２(acac)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-phenyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: [Ir(ppy) ２ (4dppy)]), bis[2-(2-pyridinyl-κN)phenyl-κC][2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC], [2-d3-methyl-8-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(5-d3-methyl-2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviated as Ir(5mppy-d) ２ (mbfpypy-d3)), {2-(methyl-d3)-8-[4-(1-methylethyl-1-d)-2-pyridinyl-κN]benzofuro[2,3-b]pyridin-7-yl-κC}bis{5-(methyl-d3)-2-[5-(methyl-d3)-2-pyridinyl-κN]phenyl-κC}iridium(III) (abbreviation: Ir(5mtpy-d6) ２ (mbfpypy-iPr-d4)), [2-d3-methyl-(2-pyridinyl-κN)benzofuro[2,3-b]pyridine-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ (mbfpypy-d3)), [2-(4-methyl-5-phenyl-2-pyridinyl-κN)phenyl-κC]bis[2-(2-pyridinyl-κN)phenyl-κC]iridium(III) (abbreviation: Ir(ppy) ２ organometallic iridium complexes having a pyridine ring, such as bis(2,4-diphenyl-1,3-oxazolato-N,C (mdppy)); ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(dpo) ２ (acac)]), bis{2-[4′-(perfluorophenyl)phenyl]pyridinato-N,C ２’} Iridium (III) acetylacetonate (abbreviation: [Ir(p-PF-ph) ２ (acac)]), bis(2-phenylbenzothiazolato-N,C ２’ ) Iridium(III) acetylacetonate (abbreviation: [Ir(bt) ２In addition to organometallic complexes such as tris(acetylacetonato)(monophenanthroline)terbium(III) (abbreviation: [Tb(acac)]), ３ (Phen)]).

[0179] [Phosphorescent Substance (570 nm to 750 nm: Yellow or Red)] Examples of phosphorescent substances that exhibit yellow or red and have an emission spectrum with a peak wavelength of 570 nm to 750 nm include the following substances.

[0180] For example, (diisobutyrylmethanato)bis[4,6-bis(3-methylphenyl)pyrimidinato]iridium(III) (abbreviation: [Ir(5mdppm) ２ (dibm)]), bis[4,6-bis(3-methylphenyl)pyrimidinato](dipivaloylmethanato)iridium(III) (abbreviation: [Ir(5mdppm) ２ (dpm)]), (dipivaloylmethanato)bis[4,6-di(naphthalen-1-yl)pyrimidinato]iridium(III) (abbreviation: [Ir(dpm)] ２ organometallic complexes having a pyrimidine ring such as (acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III) (abbreviation: [Ir(tppr) ２ (acac)]), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: [Ir(tppr) ２ (dpm)]), bis{4,6-dimethyl-2-[3-(3,5-dimethylphenyl)-5-phenyl-2-pyrazinyl-κN]phenyl-κC}(2,6-dimethyl-3,5-heptanedionato-κ ２ O,O')iridium(III) (abbreviation: [Ir(dmdppr-P) ２ (dibm)]), bis{4,6-dimethyl-2-[5-(4-cyano-2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]phenyl-κC}(2,2,6,6-tetramethyl-3,5-heptanedionato-κ ２ O,O′)iridium(III) (abbreviation: [Ir(dmdppr-dmCP)２ (dpm)]), bis{2-[5-(2,6-dimethylphenyl)-3-(3,5-dimethylphenyl)-2-pyrazinyl-κN]-4,6-dimethylphenyl-κC}(2,2′,6,6′-tetramethyl-3,5-heptanedionato-κO,O′)iridium(III) (abbreviation: [Ir(dmdppr-dmp) ２ (dpm)]), (acetylacetonato)bis(2-methyl-3-phenylquinoxalinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(mpq) ２ (acac)]), (acetylacetonato)bis(2,3-diphenylquinoxalinato-N,C ２’ ) Iridium(III) (abbreviation: [Ir(dpq) ２ (acac)]), (acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III) (abbreviation: [Ir(Fdpq) ２ organometallic complexes having a pyrazine ring, such as tris(1-phenylisoquinolinato-N,C(acac)]), ２’ ) Iridium(III) (abbreviation: [Ir(piq) ３ ]), bis(1-phenylisoquinolinato-N,C ２’ ) iridium(III) acetylacetonate (abbreviation: [Ir(piq) ２ (acac)]), and bis[4,6-dimethyl-2-(2-quinolinyl-κN)phenyl-κC] (2,4-pentanedionato-κ ２ O,O')iridium(III) (abbreviation: [Ir(dmpqn) ２ (acac)]), platinum complexes such as 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrinplatinum(II) (abbreviation: [PtOEP]), tris(1,3-diphenyl-1,3-propanedionato)(monophenanthroline)europium(III) (abbreviation: [Eu(DBM)]), ３ (Phen)]), and tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III) (abbreviation: [Eu(TTA) ３(Phen)]).

[0181] [TADF Material] The following materials can be used as the TADF material. A TADF material is a material that has a small difference between the S1 level and the T1 level (preferably 0.2 eV or less), can upconvert a triplet excited state to a singlet excited state with a small amount of thermal energy (reverse intersystem crossing), and efficiently emits light (fluorescence) from the singlet excited state. Conditions for efficiently obtaining thermally activated delayed fluorescence include an energy difference between the triplet excited energy level and the singlet excited energy level of 0 eV or more and 0.2 eV or less, preferably 0 eV or more and 0.1 eV or less. The delayed fluorescence in a TADF material refers to light emission that has a spectrum similar to that of ordinary fluorescence but has a significantly long lifetime. Its lifetime is 1 x 10 −６ seconds or more, or 1 x 10 −３ More than a second.

[0182] The TADF material can also be used as an electron transporting material, a hole transporting material, or a host material.

[0183] Examples of TADF materials include fullerene and its derivatives, acridine derivatives such as proflavine, and eosin. Also, examples of metal-containing porphyrins include those containing magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), platinum (Pt), indium (In), or palladium (Pd). Examples of metal-containing porphyrins include protoporphyrin-tin fluoride complexes (abbreviated as SnF ２ (Proto IX)), mesoporphyrin-tin fluoride complex (abbreviation: SnF ２ (Meso IX)), hematoporphyrin-tin fluoride complex (abbreviation: SnF ２ (Hemato IX)), coproporphyrin tetramethyl ester-tin fluoride complex (abbreviation: SnF ２ (Copro III-4Me)), octaethylporphyrin-tin fluoride complex (abbreviation: SnF ２ (OEP)), etioporphyrin-tin fluoride complex (abbreviation: SnF ２(Etio I)), octaethylporphyrin-platinum chloride complex (abbreviation: PtCl ２ OEP) and the like.

[0184]

[0185] Other examples include 2-(biphenyl-4-yl)-4,6-bis(12-phenylindolo[2,3-a]carbazol-11-yl)-1,3,5-triazine (abbreviation: PIC-TRZ), 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 2-[4-(10H-phenoxy) 3-[4-(5-phenyl-5,10-dihydrophenazin-10-yl)phenyl]-4,5-diphenyl-1,2,4-triazole (abbreviation: PPZ-3TPT), 3-(9,9-dimethyl-9H-acridin-10-yl)-9H-xanthen-9-one (abbreviation: ACRXTN), bis[4-(9, 9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (abbreviation: DMAC-DPS), 10-phenyl-10H,10'H-spiro[acridine-9,9'-anthracen]-10'-one (abbreviation: ACRSA), 4-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)benzofuro[3,2-d]pyrimidine (abbreviation: 4PCCzBfpm), 4-[4-(9'-phenyl-3,3'- Heteroaromatic compounds having a π-electron rich heteroaromatic compound and a π-electron deficient heteroaromatic compound, such as 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9′-phenyl-2,3′-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), may also be used.

[0186] In addition, a substance in which a π-electron-rich heteroaromatic compound and a π-electron-deficient heteroaromatic compound are directly bonded is particularly preferable because the donor property of the π-electron-rich heteroaromatic compound and the acceptor property of the π-electron-deficient heteroaromatic compound are both strong, and the energy difference between the singlet excited state and the triplet excited state is small. Furthermore, a TADF material (TADF100) in which the singlet excited state and the triplet excited state are in thermal equilibrium may be used as the TADF material. Such a TADF material has a short emission lifetime (excitation lifetime), which can suppress a decrease in the efficiency of a light-emitting element in a high-brightness region.

[0187]

[0188] In addition to the above, examples of materials capable of converting triplet excitation energy into luminescence include nanostructures of transition metal compounds having a perovskite structure. Nanostructures of metal halide perovskites are particularly preferred. Nanoparticles and nanorods are preferred as such nanostructures.

[0189] In the light-emitting layers (113, 113a, 113b, 113c), one or more substances having an energy gap larger than the energy gap of the light-emitting substance (guest material) may be selected and used as the organic compound (host material or the like) used in combination with the above-mentioned light-emitting substance (guest material).

[0190] [Fluorescent Host Material] When the light-emitting substance used in the light-emitting layer (113, 113a, 113b, 113c) is a fluorescent light-emitting substance, it is preferable to use, as the organic compound (host material) to be combined, an organic compound having a high energy level in a singlet excited state and a low energy level in a triplet excited state, or an organic compound with a high fluorescence quantum yield. Therefore, as long as the organic compound satisfies these conditions, the hole-transporting material (described above) and the electron-transporting material (described below) shown in this embodiment can be used. In addition, the organic compounds described in Embodiment 1 can be used.

[0191] Although some of the examples overlap with those described above, examples of the organic compound (host material) from the viewpoint of a preferable combination with the light-emitting substance (fluorescent light-emitting substance) include condensed polycyclic aromatic compounds such as anthracene derivatives, tetracene derivatives, phenanthrene derivatives, pyrene derivatives, chrysene derivatives, and dibenzo[g,p]chrysene derivatives.

[0192] Specific examples of organic compounds (host materials) that are preferably used in combination with fluorescent materials include 9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: PCzPA), 3,6-diphenyl-9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: DPCzPA), 3-[4-(1-naphthyl)phenyl]-9-phenyl-9H-carbazole (abbreviation: PCPN), 9,10-diphenylanthracene (abbreviation: DPAnth), N,N-diphenylanthracene (abbreviation: DPAnth), and N,N-diphenylanthracene (abbreviation: DPAnth). N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole-3-amine (abbreviation: CzA1PA), 4-(10-phenyl-9-anthryl)triphenylamine (abbreviation: DPhPA), YGAPA, PCAPA, N,9-diphenyl-N-{4-[4-(10-phenyl-9-anthryl)phenyl]phenyl}-9H-carbazole-3-amine (abbreviation: PCAPBA), N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazole-3-amine (abbreviation: 2PCAPA) , 6,12-dimethoxy-5,11-diphenylchrysene, N,N,N',N',N'',N'',N''',N'''-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine (abbreviation: DBC1), 9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA), 7-[4-(10-phenyl-9-anthryl)phenyl]-7H-dibenzo[c,g]carbazole (abbreviation: cgDBCzPA), 6-[3-(9,10-diphenyl-2-anthryl)phenyl] Benzo[b]naphtho[1,2-d]furan (abbreviation: 2mBnfPPA), 9-phenyl-10-[4'-(9-phenyl-9H-fluoren-9-yl)biphenyl-4-yl]anthracene (abbreviation: FLPPA), 9,10-bis(3,5-diphenylphenyl)anthracene (abbreviation: DPPA), 9,10-di(2-naphthyl)anthracene (abbreviation: DNA), 2-tert-butyl-9,10-di(2-naphthyl)anthracene (abbreviation: t-BuDNA), 9-(1-naphthyl)-10-(2-naphthyl)anthracene (abbreviation: α,βADN), 2-(10-phenylanthracen-9-yl)dibenzofuran, 2-(10-phenyl-9-anthracenyl)benzo[b]naphtho[2,3-d]furan (abbreviation: Bnf(II)PhA), 9-(1-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene (abbreviation: αN-βNPAnth), 2,9-di(1-naphthyl)-10-phenylanthracene (abbreviation: 2αN-αNPhA), 9 -(1-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: αN-mαNPAnth), 9-(2-naphthyl)-10-[3-(1-naphthyl)phenyl]anthracene (abbreviation: βN-mαNPAnth), 9-(1-naphthyl)-10-[4-(1-naphthyl)phenyl]anthracene (abbreviation: αN-αNPAnth), 9-(2-naphthyl)-10-[4-(2-naphthyl)phenyl]anthracene anthracene (abbreviation: βN-βNPAnth), 2-(1-naphthyl)-9-(2-naphthyl)-10-phenylanthracene (abbreviation: 2αN-βNPhA), 9-(2-naphthyl)-10-[3-(2-naphthyl)phenyl]anthracene (abbreviation: βN-mβNPAnth), 1-{4-[10-(biphenyl-4-yl)-9-anthracenyl]phenyl}-2-ethyl-1H-benzimidazole (abbreviation: EtB ImPBPhA), 9,9'-bianthryl (abbreviation: BANT), 9,9'-(stilbene-3,3'-diyl)diphenanthrene (abbreviation: DPNS), 9,9'-(stilbene-4,4'-diyl)diphenanthrene (abbreviation: DPNS2), 1,3,5-tri(1-pyrenyl)benzene (abbreviation: TPB3), 5,12-diphenyltetracene, 5,12-bis(biphenyl-2-yl)tetracene, etc.

[0193] [Phosphorescent Host Material] When the light-emitting substance used in the light-emitting layers (113, 113a, 113b, and 113c) is a phosphorescent substance, an organic compound having a triplet excitation energy greater than the triplet excitation energy (energy difference between the ground state and the triplet excited state) of the light-emitting substance can be selected as the organic compound (host material) to be combined. When a plurality of organic compounds (e.g., a first host material and a second host material (or assist material)) are used in combination with the light-emitting substance to form an exciplex, it is preferable to mix these plurality of organic compounds with the phosphorescent substance. The organic compounds described in Embodiment 1 can also be used.

[0194] A compound having a naphthalene ring may be used as the host material. The presence of a naphthalene ring can increase the electron transport property or Tg. Alternatively, a compound having an anthracene ring and a naphthalene ring may be used. The number of naphthalene rings in the host material is preferably the same as, or preferably less than, the number of naphthalene rings in the cap layer material.

[0195] With this structure, light emission can be efficiently obtained using Exciplex-Triple Energy Transfer (ExTET), which is energy transfer from an exciplex to a light-emitting substance. It is preferable to combine a plurality of organic compounds that easily form an exciplex, and it is particularly preferable to combine a compound that easily accepts holes (hole transport material) with a compound that easily accepts electrons (electron transport material).

[0196] Although some of the organic compounds (host materials, assist materials) overlap with the above-mentioned specific examples, from the viewpoint of a preferable combination with the light-emitting substance (phosphorescent light-emitting substance), examples thereof include aromatic amines (organic compounds having an aromatic amine skeleton), carbazole derivatives (organic compounds having a carbazole ring), dibenzothiophene derivatives (organic compounds having a dibenzothiophene ring), dibenzofuran derivatives (organic compounds having a dibenzofuran ring), oxadiazole derivatives (organic compounds having an oxadiazole ring), triazole derivatives (organic compounds having a triazole ring), benzimidazole derivatives (benzoin derivatives), and the like. midazole ring), quinoxaline derivatives (organic compounds having a quinoxaline ring), dibenzoquinoxaline derivatives (organic compounds having a dibenzoquinoxaline ring), pyrimidine derivatives (organic compounds having a pyrimidine ring), triazine derivatives (organic compounds having a triazine ring), pyridine derivatives (organic compounds having a pyridine ring), bipyridine derivatives (organic compounds having a bipyridine ring), phenanthroline derivatives (organic compounds having a phenanthroline ring), furodiazine derivatives (organic compounds having a furodiazine ring), zinc- and aluminum-based metal complexes, and the like.

[0197] Among the organic compounds, specific examples of the aromatic amine and carbazole derivative, which are organic compounds with high hole-transporting properties, are the same as the specific examples of the hole-transporting material described above, and any of these is preferable as the host material.

[0198] Specific examples of the dibenzothiophene derivatives and dibenzofuran derivatives, which are organic compounds with high hole transport properties among the above organic compounds, include 4-{3-[3-(9-phenyl-9H-fluoren-9-yl)phenyl]phenyl}dibenzofuran (abbreviation: mmDBFFLBi-II), 4,4′,4″-(benzene-1,3,5-triyl)tri(dibenzofuran) (abbreviation: DBF3P-II), DBT3P-II, 2,8-dipheny Examples of such compounds include 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]dibenzothiophene (abbreviation: DBTFLP-III), 4-[4-(9-phenyl-9H-fluoren-9-yl)phenyl]-6-phenyldibenzothiophene (abbreviation: DBTFLP-IV), and 4-[3-(triphenylen-2-yl)phenyl]dibenzothiophene (abbreviation: mDBTPTp-II), all of which are preferable as the host material.

[0199] Other preferred host materials include metal complexes having an oxazole-based or thiazole-based ligand, such as bis[2-(2-benzoxazolyl)phenolato]zinc(II) (abbreviation: ZnPBO) and bis[2-(2-benzothiazolyl)phenolato]zinc(II) (abbreviation: ZnBTZ).

[0200] Specific examples of the organic compounds having high electron transport properties, such as oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, quinazoline derivatives, and phenanthroline derivatives, among the above organic compounds, include 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation: PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene (abbreviation: OXD-7), 9-[4- (5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]-9H-carbazole (abbreviation: CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (abbreviation: TAZ), 2,2',2''-(1,3,5-benzenetriyl)tris(1-phenyl-1H-benzimidazole) (abbreviation: TPBI), 2-[3-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole (abbreviation: mDBTBIm-II), 4,4'-bis(5 organic compounds containing heteroaromatic rings having a polyazole ring, such as 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline (abbreviation: NBPhen), 2,2'-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline) (abbreviation: mPPhen2P), 2,2'-biphenyl-4,4'-diyl ... organic compounds containing heteroaromatic rings having a pyridine ring, such as 2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTPDBq-II), 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), 2-[3′-(9H-carbazol-9-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mCzBPDBq),6-diphenyl-9H-carbazol-9-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 2CzPDBq-III), 7-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 7mDBTPDBq-II), and 6-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation: 6mDBTPDB q-II), 2-{4-[9,10-di(2-naphthyl)-2-anthryl]phenyl}-1-phenyl-1H-benzimidazole (abbreviation: ZADN), 2-[4′-(9-phenyl-9H-carbazol-3-yl)-3,1′-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), and the like, all of which are preferred as host materials.

[0201] Specific examples of the pyridine derivatives, diazine derivatives (including pyrimidine derivatives, pyrazine derivatives, and pyridazine derivatives), triazine derivatives, and furodiazine derivatives, which are organic compounds with high electron transport properties among the above organic compounds, include 4,6-bis[3-(phenanthrene-9-yl)phenyl]pyrimidine (abbreviation: 4,6mPnP2Pm), 4,6-bis[3-(4-dibenzothienyl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II), and 4,6-bis[3-(9H-carbazol-9-yl)phenyl]pyrimidine (abbreviation: 4,6mDBTP2Pm-II). 2-{4-[3-(N-phenyl-9H-carbazol-3-yl)-9H-carbazol-9-yl]phenyl}-4,6-diphenyl-1,3,5-triazine (abbreviation: PCCzPTzn), 9-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-9'-phenyl-2,3'-bi-9H-carbazole (abbreviation: mPCCzPTzn-02), 3,5-bis[3-(9H-carbazol-9-yl)phenyl]pyridine (abbreviation: 35DCzPPy), 1,3 ,5-tri[3-(3-pyridyl)phenyl]benzene (abbreviation: TmPyPB), 9,9'-[pyrimidine-4,6-diylbis(biphenyl-3,3'-diyl)]bis(9H-carbazole) (abbreviation: 4,6mCzBP2Pm), 2-[3'-(9,9-dimethyl-9H-fluoren-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mFBPTzn), 8-(biphenyl-4-yl)-4-[3-(dibenzothiophen-4-yl)phenyl]-[1]benzofuro[3,2-d ]pyrimidine (abbreviation: 8BP-4mDBtPBfpm), 9-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr), 9-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmDBtBPNfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 11mDBtBPPnfpr), 11-[3'-(dibenzothiophen-4-yl)biphenyl-4-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 11-[3'-(9H-carbazol-9-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 12-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenanthro[9',10':4,5]furo[2,3-b]pyrazine (abbreviation: 12PCCzPnfpr), 9-[3'-(9 -phenyl-9H-carbazol-3-yl)biphenyl-4-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9pmPCBPNfpr), 9-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9PCCzNfpr), 10-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 10PCCzNfpr), 9-[3'-(6-phenylbenzo[b]naphtho [1,2-d]furan-8-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mBnfBPNfpr), 9-{3-[6-(9,9-dimethylfluoren-2-yl)dibenzothiophen-4-yl]phenyl}naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mFDBtPNfpr), 9-[3'-(6-phenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mDBtBPNfpr-02), 9-[3-(9'-phenyl-3,3'-bi-9H-carbazol-9-yl)phenyl]naphtho[1',2':4,5]furo[2,3-b]pyrazine (abbreviation: 9mPCCzPNfpr), 9-[3'-(2,8-diphenyldibenzothiophen-4-yl)biphenyl-3-yl]naphtho[1',2':4,5]furo[2,3-b]pyrazine, 11-[3'-(2,8-diphenyldibenzothiophen-4-yl)biphenyl-3-yl]phenanthro[9',10':4,5]furo[2,3-b]pyrazine, 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[2,1-b]carbazole (abbreviation: mINc(II)PTzn), 2-[3′-(triphenylen-2-yl)biphenyl-3-yl]-4,6-diphenyl-1,3,5-triazine (abbreviation: mTpBPTzn), 2-(biphenyl-4-yl)-4-phenyl-6-(9, 9'-spirobi[9H-fluoren]-2-yl)-1,3,5-triazine (abbreviation: BP-SFTzn), 2,6-bis(4-naphthalen-1-ylphenyl)-4-[4-(3-pyridyl)phenyl]pyrimidine (abbreviation: 2,4NP-6PyPPm), 3-[9-(4,6-diphenyl-1,3,5-triazin-2-yl)-2-dibenzofuranyl]-9-furan Examples of suitable host materials include organic compounds containing a heteroaromatic ring having a diazine ring, such as 2-(biphenyl-3-yl)-4-phenyl-6-{8-[(1,1':4',1''-terphenyl)-4-yl]-1-dibenzofuranyl}-1,3,5-triazine (abbreviation: mBP-TPDBfTzn), 6-(biphenyl-3-yl)-4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenylpyrimidine (abbreviation: 6mBP-4Cz2PPm), and 4-[3,5-bis(9H-carbazol-9-yl)phenyl]-2-phenyl-6-(biphenyl-4-yl)pyrimidine (abbreviation: 6BP-4Cz2PPm), all of which are preferred as host materials.

[0202] Specific examples of metal complexes, which are organic compounds with high electron transport properties among the above organic compounds, include zinc-based or aluminum-based metal complexes such as tris(8-quinolinolato)aluminum(III) (abbreviation: Alq) and tris(4-methyl-8-quinolinolato)aluminum(III) (abbreviation: Almq). ３ ), bis(10-hydroxybenzo[h]quinolinato)beryllium(II) (abbreviation: BeBq ２), bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum(III) (abbreviation: BAlq), bis(8-quinolinolato)zinc(II) (abbreviation: Znq), as well as metal complexes having a quinoline ring or a benzoquinoline ring, and the like, all of which are preferable as the host material.

[0203] Other preferred host materials include polymer compounds such as poly(2,5-pyridinediyl) (abbreviation: PPy), poly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)] (abbreviation: PF-Py), and poly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2′-bipyridine-6,6′-diyl)] (abbreviation: PF-BPy).

[0204] Furthermore, bipolar 9-phenyl-9′-(4-phenyl-2-quinazolinyl)-3,3′-bi-9H-carbazole (abbreviation: PCCzQz), 2-[4′-(9-phenyl-9H-carbazol-3-yl)-3,1′-biphenyl-1-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mpPCBPDBq), 5-[3-(4,6-diphenyl-1,3,5-triazin-2-yl)phenyl]-7,7-dimethyl-5H,7H-indeno[

[0049] Organic compounds having a diazine ring, such as 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: mINc(II)PTzn), 11-[4-(biphenyl-4-yl)-6-phenyl-1,3,5-triazin-2-yl]-11,12-dihydro-12-phenylindolo[2,3-a]carbazole (abbreviation: BP-Icz(II)Tzn), and 7-[4-(9-phenyl-9H-carbazol-2-yl)quinazolin-2-yl]-7H-dibenzo[c,g]carbazole (abbreviation: PC-cgDBCzQz), can also be used as the host material.

[0205] <Hole injection layer> The hole injection layer (111, 111a, 111b) is a layer that injects holes from the first electrode 101, which is an anode, and the charge generation layer (106, 106a, 106b) to the organic compound layer (103, 103a, 103b), and is a layer that contains an organic acceptor material and a material with high hole injection properties.

[0206] In the hole-injection layer (111, 111a, 111b), the organic compound having hole-transporting properties used in the composite material is more preferably a substance having a relatively low HOMO level, that is, a HOMO level of -5.7 eV or more and -5.4 eV or less. When the organic compound having hole-transporting properties used in the composite material has a relatively low HOMO level, injection of holes into the hole-transporting layer becomes easy, and a light-emitting device with a long lifetime can be easily obtained. Furthermore, when the organic compound having hole-transporting properties used in the composite material is a substance having a relatively low HOMO level, induction of holes is appropriately suppressed, and a light-emitting device with a long lifetime can be obtained.

[0207] The hole injection layer (111, 111a, 111b) has the function of promoting hole injection by reducing the hole injection barrier from one of the pair of electrodes (the first electrode 101 or the second electrode 102). It is formed, for example, from a transition metal oxide, a phthalocyanine derivative, or an aromatic amine. Examples of transition metal oxides include molybdenum oxide, vanadium oxide, ruthenium oxide, tungsten oxide, and manganese oxide. Examples of phthalocyanine derivatives include phthalocyanine and metal phthalocyanine. Examples of aromatic amines include benzidine derivatives and phenylenediamine derivatives. Polymer compounds such as polythiophene and polyaniline can also be used, and a representative example is poly(ethylenedioxythiophene) / polystyrene sulfonic acid, which is a self-doped polythiophene.

[0208] The hole injection layer (111, 111a, 111b) may be a layer containing a composite material of a hole transporting material and a material that exhibits electron accepting properties. Alternatively, a stack of a layer containing a material that exhibits electron accepting properties and a layer containing a hole transporting material may be used. Charges can be exchanged between these materials in a steady state or under the presence of an electric field. Examples of materials that exhibit electron accepting properties include organic acceptors such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives. Specifically, 7,7,8,8-tetracyano-2,3,5,6-tetrafluoroquinodimethane (abbreviation: F ４ The compound having an electron-withdrawing group (a halogen group or a cyano group), such as hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN), is preferably a compound having an electron-withdrawing group (a halogen group or a cyano group), such as hexacyano-1,4,5,8,9,12-hexaazatriphenylene (abbreviated as HAT-CN). Alternatively, a transition metal oxide, such as an oxide of a metal from Group 4 to Group 8, can be used. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. Among these, molybdenum oxide is preferred because it is stable in the atmosphere, has low hygroscopicity, and is easy to handle.

[0209] As the hole transporting material, a material having a higher hole transporting property than electron transporting property can be used. −６ cm ２ It is preferable that the material has a hole mobility of 1 / Vs or more. Specifically, aromatic amines, carbazole derivatives, aromatic hydrocarbons, stilbene derivatives, and the like, which are listed as hole-transporting materials that can be used for the light-emitting layer 113, can be used. The hole-transporting material may also be a polymer compound.

[0210] <Hole Transport Layer> The hole transport layer (112, 112a, 112b) is a layer containing a hole transport material, and the hole transport materials exemplified as the material for the hole injection layer (111, 111a, 111b) can be used. The hole transport layer (112, 112a, 112b) has a function of transporting holes injected into the hole injection layer (111, 111a, 111b) to the light-emitting layer (113, 113a, 113b), and therefore preferably has a HOMO level that is the same as or close to the HOMO level of the hole injection layer (111, 111a, 111b).

[0211] Also, 1 x 10 −６ cm ２ It is preferable that the material be a substance having a hole mobility of 1 / Vs or more. However, other substances may be used as long as they have a higher hole transporting property than electron transporting property. Note that the layer containing the substance having a high hole transporting property may be not only a single layer, but also a stack of two or more layers made of the above-mentioned substance.

[0212] The hole transport layer or hole injection layer preferably has a smaller ordinary refractive index than the cap layer. The hole transport layer or hole injection layer preferably has a smaller ordinary refractive index than the light-emitting layer. Specifically, the ordinary refractive indexes of the hole transport material, the host material for the light-emitting layer, and the cap layer material when each are formed into a film can be compared. It is preferable that the ordinary refractive indexes of the films satisfy the relationship hole transport material < host material < cap layer material, since this can improve extraction efficiency.

[0213] <Electron Transport Layer> The electron transport layer (114, 114a, 114b) has a function of transporting electrons injected from the other of the pair of electrodes (the first electrode 101 or the second electrode 102) via the electron injection layer (115, 115a, 115b) to the light-emitting layer 113. As the electron-transporting material, a material having a higher electron transporting property than a hole transporting property can be used, and −６ cm ２ / Vs or more. Examples of compounds that readily accept electrons (materials having electron transport properties) include π-electron-deficient heteroaromatic compounds such as nitrogen-containing heteroaromatic compounds, and organometallic complexes. Specific examples include organometallic complexes having a quinoline ligand, a benzoquinoline ligand, an oxazole ligand, or a thiazole ligand, which are listed as electron transport materials that can be used in the light-emitting layer 113. Other examples include oxadiazole derivatives, triazole derivatives, benzimidazole derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, phenanthroline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and triazine derivatives. Examples of suitable materials include 1×10 −６ cm ２ It is preferable that the electron transport layer is a substance having an electron mobility of 1 / Vs or more. Note that any substance other than the above may be used as the electron transport layer as long as it has a higher electron transporting property than hole transporting property. The electron transport layer (114, 114a, 114b) may be a single layer or may be a stack of two or more layers made of the above substances.

[0214] A compound having a naphthalene ring may also be used as the electron transport material. Naphthalene is more reactive than, for example, benzene, and is advantageous from the viewpoint of synthesis. Compounds containing naphthalene can increase electron transport properties or Tg. The electron transport layer can increase its light extraction efficiency by reducing its ordinary refractive index. Therefore, the number of naphthalene rings contained in the electron transport material is preferably two or less, and preferably one. The electron transport layer preferably has a smaller ordinary refractive index than the cap layer. Therefore, the number of naphthalene rings contained in the electron transport material should be the same as, or preferably less than, the number of naphthalene rings contained in the cap layer material. For example, an azine compound (a compound having a triazine skeleton or a pyrimidine skeleton) containing a naphthalene ring can be used as the electron transport material. As long as light extraction efficiency is obtained, the difference in ordinary refractive index between the electron transport layer and the cap layer may be small. In this case, the same organic compound can be used for the electron transport layer and the cap layer.

[0215] Furthermore, the LUMO level of the electron transporting material is preferably equal to or lower than the LUMO level of the capping layer material, which is expected to facilitate the injection of electrons from the cathode to the electron injection layer.

[0216] A compound having a cyano group may also be used as the electron transport material. Using a compound having a cyano group in the electron transport layer may reduce the device's driving voltage, improve efficiency, or extend the device's lifespan. However, since a large number of cyano groups may disrupt the carrier balance within the device, the number of cyano groups should be two or less, preferably one or less. The number of cyano groups contained in the electron transport material should be the same as or preferably less than the number of cyano groups contained in the cap layer material. As the electron transport material, for example, an azine compound containing a cyano group or an azine compound containing a cyano group and a naphthalene ring can be used.

[0217] In addition, a compound having an anthracene ring (also referred to as an anthracene compound) can be used as the electron transport material. Furthermore, a structure having a naphthyl ring can improve the electron transport property or Tg. Therefore, a structure having an anthracene ring and a naphthalene ring may be used. It is preferable that the number of naphthalene rings contained in the electron transport material is smaller than the number of naphthalene rings contained in the cap layer material.

[0218] In addition, it is preferable that the electron transport layer or the electron injection layer has a smaller ordinary refractive index than the light emitting layer. When the capping layer is included, it is preferable that the ordinary refractive index of the film satisfy the relationship of electron transport material < host material < capping layer material, because this can improve extraction efficiency.

[0219] Furthermore, a layer for controlling the movement of electron carriers may be provided between the electron transport layer (114, 114a, 114b) and the light-emitting layer (113, 113a, 113b). This layer is made by adding a small amount of a substance with high electron trapping properties to a material with high electron transport properties as described above, and by suppressing the movement of electron carriers, it becomes possible to adjust the carrier balance. Such a configuration is highly effective in suppressing problems (e.g., a reduction in device life) caused by electrons penetrating the light-emitting layer.

[0220] <Electron Injection Layer> The electron injection layer (115, 115a, 115b) has a function of promoting electron injection by reducing the electron injection barrier from the second electrode 102, and for example, a Group 1 metal, a Group 2 metal, or an oxide, halide, or carbonate thereof can be used. In addition, a composite material of the above-mentioned electron transporting material and a material that exhibits electron donating properties can also be used. Examples of materials that exhibit electron donating properties include Group 1 metals, Group 2 metals, or oxides thereof. Specifically, lithium fluoride (LiF), sodium fluoride (NaF), cesium fluoride (CsF), calcium fluoride (CaF ２ ), lithium oxide (LiO ｘ Alkali metals, alkaline earth metals, or compounds thereof such as erbium fluoride (ErF ３ A rare earth metal compound such as ZnO, ZnS, ZnO, ZnSe ...

[0221] The electron injection layer (115, 115a, 115b) may also be formed using a composite material obtained by mixing an organic compound and an electron donor (donor). Such composite materials have excellent electron injection and electron transport properties because electrons are generated in the organic compound by the electron donor. In this case, the organic compound is preferably a material that is excellent at transporting generated electrons. Specifically, for example, the substances constituting the electron transport layer 114 (organometallic complexes, heteroaromatic compounds, etc.) described above can be used. The electron donor may be any substance that exhibits electron donating properties to the organic compound. Specifically, alkali metals, alkaline earth metals, or rare earth metals are preferred, such as lithium, sodium, cesium, magnesium, calcium, erbium, and ytterbium. Alkali metal oxides or alkaline earth metal oxides are preferred, such as lithium oxide, calcium oxide, and barium oxide. Lewis bases such as magnesium oxide can also be used. Organic compounds such as tetrathiafulvalene (abbreviated as TTF) can also be used.

[0222] The light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer can be formed by vapor deposition (including vacuum vapor deposition), inkjet printing, coating, gravure printing, etc. In addition to the materials described above, the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer may be made of inorganic compounds such as quantum dots or polymeric compounds (oligomers, dendrimers, polymers, etc.).

[0223] The quantum dots may be colloidal quantum dots, alloy quantum dots, core-shell quantum dots, core quantum dots, etc. Quantum dots containing elements from groups 2 and 16, 13 and 15, 13 and 17, 11 and 17, or 14 and 15 may also be used. Quantum dots containing elements such as cadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P), indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), or aluminum (Al) may also be used.

[0224] <<Pair of Electrodes>> The first electrode 101 and the second electrode 102 function as an anode or a cathode of the light-emitting element. The first electrode 101 and the second electrode 102 can be formed using a metal, an alloy, a conductive compound, a mixture thereof, a stacked body, or the like.

[0225] One of the first electrode 101 and the second electrode 102 is preferably formed of a conductive material having a light-reflecting function. Examples of the conductive material include aluminum (Al) and alloys containing Al. Examples of alloys containing Al include alloys containing Al and L (L represents one or more of titanium (Ti), neodymium (Nd), nickel (Ni), and lanthanum (La)), such as alloys containing Al and Ti, or alloys containing Al, Ni, and La. Aluminum has low resistance and high light reflectivity. Furthermore, aluminum is abundant in the earth's crust and inexpensive, so the use of aluminum can reduce the manufacturing cost of light-emitting elements. Alternatively, silver (Ag) or an alloy containing Ag and N (N represents one or more of yttrium (Y), Nd, magnesium (Mg), ytterbium (Yb), Al, Ti, gallium (Ga), zinc (Zn), indium (In), tungsten (W), manganese (Mn), tin (Sn), iron (Fe), Ni, copper (Cu), palladium (Pd), iridium (Ir), or gold (Au)) may be used. Examples of alloys containing silver include alloys containing silver, palladium, and copper, alloys containing silver and copper, alloys containing silver and magnesium, alloys containing silver and nickel, alloys containing silver and gold, and alloys containing silver and ytterbium. Other transition metals that can be used include tungsten, chromium (Cr), molybdenum (Mo), copper, and titanium.

[0226] Furthermore, light emitted from the light-emitting layer is extracted through one or both of the first electrode 101 and the second electrode 102. Therefore, at least one of the first electrode 101 and the second electrode 102 is preferably formed from a conductive material that has a light-transmitting function. The conductive material has a visible light transmittance of 40% to 100%, preferably 60% to 100%, and a resistivity of 1×10 −２Examples include conductive materials with a resistance of Ω·cm or less.

[0227] The first electrode 101 and the second electrode 102 may be formed of a conductive material that has a function of transmitting and reflecting light. The conductive material has a visible light reflectance of 20% to 80%, preferably 40% to 70%, and a resistivity of 1×10 −２ Examples of suitable conductive materials include those with a resistivity of Ω·cm or less. For example, the conductive layer can be formed using one or more conductive metals, alloys, conductive compounds, etc. Specifically, metal oxides such as indium tin oxide (ITO), indium tin oxide containing silicon or silicon oxide (abbreviated as ITSO), indium oxide-zinc oxide (IZO), indium oxide-tin oxide containing titanium, indium-titanium oxide, and indium oxide containing tungsten oxide and zinc oxide can be used. Alternatively, a thin metal film that is light-transmitting (preferably, a thickness of 1 nm to 30 nm) can be used. Examples of suitable metals include Ag, alloys of Ag and Al, Ag and Mg, Ag and Au, and Ag and Yb.

[0228] In this specification and the like, the material having the function of transmitting light may be any material that has the function of transmitting visible light and is conductive, and includes, for example, oxide conductors such as ITO as described above, as well as oxide semiconductors or organic conductors containing organic substances. Examples of organic conductors containing organic substances include composite materials obtained by mixing an organic compound with an electron donor (donor), and composite materials obtained by mixing an organic compound with an electron acceptor. In addition, inorganic carbon-based materials such as graphene may also be used. The resistivity of the material is preferably 1×10 ５ Ω cm or less, more preferably 1×10 ４ It is Ω·cm or less.

[0229] Alternatively, one or both of the first electrode 101 and the second electrode 102 may be formed by stacking a plurality of the above materials.

[0230] Furthermore, in order to improve light extraction efficiency, a material having a higher refractive index than an electrode having a light-transmitting function may be formed in contact with the electrode. Such a material may be a material that transmits visible light, and may or may not be conductive. Examples of such a material include oxide semiconductors and organic materials, as well as the oxide conductors described above. Examples of organic materials include the materials exemplified for the light-emitting layer, hole injection layer, hole transport layer, electron transport layer, and electron injection layer. In addition, inorganic carbon-based materials or thin metal films that transmit light may also be used, and multiple layers of several nanometers to several tens of nanometers thick may be stacked.

[0231] When the first electrode 101 or the second electrode 102 functions as a cathode, it is preferable that the first electrode 101 or the second electrode 102 be made of a material having a small work function (3.8 eV or less). For example, elements belonging to Group 1 or 2 of the periodic table (alkali metals such as lithium, sodium, and cesium, alkaline earth metals such as calcium and strontium, magnesium, etc.), alloys containing these elements (e.g., Ag and Mg, Al and Li), rare earth metals such as europium (Eu) and Yb, alloys containing these rare earth metals, alloys containing aluminum, and alloys containing silver can be used.

[0232] When the first electrode 101 or the second electrode 102 is used as an anode, it is preferable to use a material having a large work function (4.0 eV or more).

[0233] The first electrode 101 and the second electrode 102 may be a stack of a conductive material having a light reflecting function and a conductive material having a light transmitting function. In this case, the first electrode 101 and the second electrode 102 are preferable because they can have a function of adjusting the optical path so that desired light from each light-emitting layer can be resonated and the light of that wavelength can be intensified.

[0234] The first electrode 101 and the second electrode 102 can be formed by a sputtering method, a vapor deposition method, a printing method, a coating method, a molecular beam epitaxy (MBE) method, a CVD method, a pulsed laser deposition method, an atomic layer deposition (ALD) method, or the like, as appropriate.

[0235] <Charge Generation Layer> The charge generation layer 106 has a function of injecting electrons into the organic compound layer 103a and injecting holes into the organic compound layer 103b when a voltage is applied between the first electrode (anode) 101 and the second electrode (cathode) 102. The charge generation layer 106 may be a structure in which an electron acceptor is added to a hole transporting material (also referred to as a P-type layer) or a structure in which an electron donor is added to an electron transporting material (also referred to as an electron injection buffer layer). Alternatively, both of these structures may be stacked. Furthermore, an electron relay layer may be provided between the P-type layer and the electron injection buffer layer. Forming the charge generation layer 106 using the above-described material can suppress an increase in driving voltage when an EL layer is stacked.

[0236] In the case where the charge generation layer 106 has a structure (a p-type layer) in which an electron acceptor is added to a hole transporting material that is an organic compound, the material shown in this embodiment mode can be used as the hole transporting material. ４ -TCNQ), chloranil, etc. Also, oxides of metals belonging to Groups 4 to 8 of the periodic table can be used. Specific examples include vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide. The acceptor materials described above may also be used. Furthermore, a mixed film obtained by mixing materials constituting the P-type layer may be used, or single films containing each material may be stacked.

[0237] In addition, when the charge generation layer 106 has a structure in which an electron donor is added to an electron transporting material (electron injection buffer layer), the material shown in this embodiment can be used as the electron transporting material. In addition, as the electron donor, an alkali metal, an alkaline earth metal, a rare earth metal, or a metal belonging to Group 2 or Group 13 in the periodic table, or an oxide or carbonate thereof can be used. Specifically, lithium (Li), cesium (Cs), magnesium (Mg), calcium (Ca), ytterbium (Yb), indium (In), lithium oxide (Li ２ It is preferable to use cesium carbonate, cesium carbonate, etc. Also, an organic compound such as tetrathianaphthacene may be used as the electron donor.

[0238] When an electron relay layer is provided between the P-type layer and the electron injection buffer layer in the charge generation layer 106, the electron relay layer contains at least a substance having electron transport properties and has the function of preventing interaction between the electron injection buffer layer and the P-type layer and smoothly transferring electrons. The LUMO level of the substance having electron transport properties contained in the electron relay layer is preferably between the LUMO level of the acceptor substance in the P-type layer and the LUMO level of the substance having electron transport properties contained in the electron transport layer in contact with the charge generation layer 106. The specific energy level of the LUMO level of the substance having electron transport properties used in the electron relay layer is −5.0 eV or higher, preferably −5.0 eV or higher to −3.0 eV or lower, more preferably −4.30 eV or higher to −3.00 eV or lower, and more preferably −4.30 eV or higher to −3.30 eV or lower. Note that the substance having electron transport properties used in the electron relay layer is preferably a phthalocyanine-based material or an organometallic complex having a metal-oxygen bond and an aromatic ligand.

[0239] Specifically, an alkylamine skeleton having 1 to 6 carbon atoms can be used as an organic compound that can be used for the electron relay layer. Specific examples include organic compounds having a basic skeleton, such as the acetamidine skeleton and guanidine skeleton represented by the following structural formulas (401) to (404). In particular, structural formulas (403) and (404) having a guanidine skeleton are preferred because of their high basicity. Furthermore, these organic compounds having an alkylamine skeleton preferably have electron transport properties as a substituent, and preferably have one or more of an aromatic hydrocarbon skeleton, a π-electron-deficient heteroaromatic ring skeleton, or a nitrogen-containing heteroaromatic hydrocarbon skeleton. Specific examples include a benzene skeleton, a fluorene skeleton, a naphthalene skeleton, an anthracene skeleton, a phenanthrene skeleton, a triphenylene skeleton, a pyrene skeleton, a polyazole skeleton, a pyridine skeleton, a pyrimidine skeleton, a pyrazine skeleton, a diazine skeleton, a triazine skeleton, a quinoline skeleton, a quinazoline skeleton, a quinoxaline skeleton, a phenanthroline skeleton, and a dibenzoquinoxaline skeleton.

[0240]

[0241] Specifically, the organic compound is preferably an organic compound having a bicyclo ring structure having two or more nitrogen atoms as a ring-constituting element, and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms as a ring-constituting carbon or an aromatic hydrocarbon ring having 6 to 30 carbon atoms as a ring-constituting carbon, more specifically, an organic compound having a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms as a ring-constituting carbon or an aromatic hydrocarbon ring having 6 to 30 carbon atoms as a ring-constituting carbon. Note that the organic compound is more preferably an organic compound having a bicyclo ring structure having two or more nitrogen atoms as a ring-constituting element, and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms as a ring-constituting carbon, more specifically, an organic compound having a 1,3,4,6,7,8-hexahydro-2H-pyrimido[1,2-a]pyrimidine skeleton and a heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms as a ring-constituting carbon. Further, organic compounds having a guanidine skeleton are preferred, and organic compounds having a molecular structure in which a bicyclo ring structure having two or more nitrogen atoms as ring-constituting elements contains a guanidine skeleton are more preferred.

[0242] More specifically, the organic compound is preferably an organic compound represented by the following general formula (R1).

[0243]

[0244] In the organic compound represented by the general formula (R1), X is a group represented by the following general formula (R1-1), and Y is a group represented by the following general formula (R1-2). ４０１ and R ４０２ each independently represents hydrogen (including deuterium), h represents an integer of 1 to 6, and Ar represents a substituted or unsubstituted heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms forming the ring or an aromatic hydrocarbon ring having 6 to 30 carbon atoms forming the ring. Ar is preferably a substituted or unsubstituted heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms forming the ring.

[0245] Furthermore, by setting h to an integer of 1 or 2, an organic compound with good sublimability can be provided.

[0246] Ar preferably has one or more of an aromatic ring skeleton, a π-electron-deficient heteroaromatic ring skeleton, or a nitrogen-containing heteroaromatic skeleton, specifically, a substituent having a benzene skeleton, a naphthalene skeleton, an anthracene skeleton, a phenanthrene skeleton, a polyazole skeleton, a pyridine skeleton, a pyrimidine skeleton, a pyrazine skeleton, a diazine skeleton, a triazine skeleton, a quinoline skeleton, a quinazoline skeleton, a quinoxaline skeleton, a phenanthroline skeleton, or a dibenzoquinoxaline skeleton.

[0247]

[0248] However, in the above general formulas (R1-1) and (R1-2), R ４０３ ~R ４０６ each independently represents hydrogen (including deuterium), m represents an integer of 0 to 4, n represents an integer of 1 to 5, and m+1≧n. When m or n is 2 or more, a plurality of R ３ ~R ６ may be the same or different. When m is 0, carbon (C) and nitrogen (N) are preferably bonded to each other in the general formula (R1).

[0249] The organic compound represented by the general formula (R1) is preferably any one of the following general formulae (R2-1) to (R2-6).

[0250]

[0251] However, R ４１１ ~R ４２６ each independently represents hydrogen (including deuterium), h represents an integer of 1 to 6, and Ar is an organic compound which is a substituted or unsubstituted heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms forming a ring, or an aromatic hydrocarbon ring having 6 to 30 carbon atoms forming a ring. Ar is preferably a substituted or unsubstituted heteroaromatic hydrocarbon ring having 2 to 30 carbon atoms forming a ring.

[0252] In the above general formula (R1) and general formulas (R2-1) to (R2-6), specific examples of the substituted or unsubstituted heteroaromatic hydrocarbon ring represented by Ar and having 2 to 30 carbon atoms constituting a ring or the aromatic hydrocarbon ring represented by Ar and having 6 to 30 carbon atoms constituting a ring include a pyridine ring, a bipyridine ring, a pyrimidine ring, a bipyrimidine ring, a pyrazine ring, a bipyrazine ring, a triazine ring, a quinoline ring, an isoquinoline ring, a benzoquinoline ring, a phenanthroline ring, a quinoxaline ring, a benzoquinoxaline ring, a dibenzoquinoxaline ring, an azofluorene ring, a diazofluorene ring, a carbazole ring, a benzocarbazole ring, a dibenzocarbazole ring, and dibenzofuran. ring, benzonaphthofuran ring, dinaphthofuran ring, dibenzothiophene ring, benzonaphthothiophene ring, dinaphthothiophene ring, benzofuropyridine ring, benzofuropyrimidine ring, benzothiopyridine ring, benzothiopyrimidine ring, naphthofuropyridine ring, naphthofuropyrimidine ring, naphthothiopyridine ring, naphthothiopyrimidine ring, dibenzoquinoxaline ring, acridine ring, xanthene ring, phenothiazine ring, phenoxazine ring, phenazine ring, triazole ring, oxazole ring, oxadiazole ring, thiazole ring, thiadiazole ring, imidazole ring, benzimidazole ring, pyrazole ring, and pyrrole ring. In the above general formula (R1) and general formulas (R2-1) to (R2-6), specific examples of the substituted or unsubstituted heteroaromatic hydrocarbon ring having 6 to 30 carbon atoms and constituting the ring represented by Ar include a benzene ring, a naphthalene ring, a fluorene ring, a dimethylfluorene ring, a diphenylfluorene ring, a spirofluorene ring, an anthracene ring, a phenanthrene ring, a triphenylene ring, a pyrene ring, a tetracene ring, a chrysene ring, a benzo[a]anthracene ring, etc. Among these, any one of the following structural formulas (Ar-401) to (Ar-427) is preferable.

[0253]

[0254] It is preferable that Ar contains nitrogen as a ring-constituting element, and Ar is bonded to the skeleton in parentheses in general formula (R1) via a bond to the nitrogen or a bond to a carbon adjacent to the nitrogen.

[0255] Specific examples of the organometallic compounds represented by the general formula (R1) and the general formulas (R2-1) to (R2-6) include organic compounds represented by the following structural formulas (405) to (424).

[0256]

[0257] Although FIG. 3D shows a structure in which two organic compound layers 103 are stacked, a stack structure of three or more organic compound layers may be formed by providing a charge generating layer between different organic compound layers.

[0258] <<Substrate>> The light-emitting element according to one embodiment of the present invention may be fabricated over a substrate made of glass, plastic, or the like. The order of fabrication on the substrate may be such that layers are stacked in order from the first electrode 101 side or the second electrode 102 side.

[0259] Note that, as a substrate on which a light-emitting element according to one embodiment of the present invention can be formed, for example, glass, quartz, or plastic can be used. A flexible substrate may also be used. A flexible substrate is a substrate that can be bent (flexible), and examples thereof include a plastic substrate made of polycarbonate or polyarylate. Films, inorganic vapor-deposited films, and the like can also be used. Note that other materials may be used as long as they function as a support in the manufacturing process of the light-emitting element and the optical element. Alternatively, any material may be used as long as it has a function of protecting the light-emitting element and the optical element.

[0260] For example, in this specification, a light-emitting element can be formed using various substrates. The type of substrate is not particularly limited. Examples of such substrates include semiconductor substrates (e.g., single-crystal substrates or silicon substrates), SOI substrates, glass substrates, quartz substrates, plastic substrates, metal substrates, stainless steel substrates, substrates having stainless steel foil, tungsten substrates, substrates having tungsten foil, flexible substrates, laminated films, cellulose nanofibers (CNF) containing fibrous materials, paper, and base films. Examples of glass substrates include barium borosilicate glass, aluminoborosilicate glass, and soda-lime glass. Examples of flexible substrates, laminated films, and base films include the following: For example, plastics such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyethersulfone (PES), and polytetrafluoroethylene (PTFE). Another example is acrylic resin. Another example is polypropylene, polyester, polyvinyl fluoride, or polyvinyl chloride. Other examples include resins such as polyamide, polyimide, aramid, and epoxy, inorganic vapor-deposited films, and papers.

[0261] Alternatively, a flexible substrate may be used as the substrate, and the light-emitting element may be formed directly on the flexible substrate. Alternatively, a release layer may be provided between the substrate and the light-emitting element. The release layer can be used to separate the light-emitting element from the substrate after completing a part or all of the light-emitting element thereon and transfer it to another substrate. In this case, the light-emitting element can be transferred to a substrate with poor heat resistance or a flexible substrate. The release layer may be, for example, a laminated structure of inorganic films such as a tungsten film and a silicon oxide film, or a structure in which a resin film such as polyimide is formed on a substrate.

[0262] That is, a light-emitting element may be formed using a certain substrate, and then the light-emitting element may be transferred to another substrate, and the light-emitting element may be disposed on the other substrate. In addition to the above-mentioned substrates, examples of the substrate onto which the light-emitting element may be transferred include a cellophane substrate, a stone substrate, a wood substrate, a cloth substrate (including natural fibers (silk, cotton, hemp), synthetic fibers (nylon, polyurethane, polyester), or recycled fibers (acetate, cupra, rayon, recycled polyester)), a leather substrate, or a rubber substrate. By using these substrates, a light-emitting element that is durable, highly heat-resistant, lightweight, or thin can be obtained.

[0263] Alternatively, a field effect transistor (FET) may be formed on the substrate, and a light-emitting device may be fabricated on an electrode electrically connected to the FET, thereby fabricating an active matrix display device in which the FET controls the driving of the light-emitting device.

[0264] Note that one embodiment of the present invention has been described in this embodiment. Alternatively, another embodiment of the present invention will be described. However, one embodiment of the present invention is not limited thereto. That is, various embodiments of the present invention are described in this embodiment and the other embodiments, and therefore one embodiment of the present invention is not limited to a specific embodiment. For example, although an example in which the present invention is applied to a light-emitting element has been described as one embodiment of the present invention, one embodiment of the present invention is not limited thereto. For example, depending on the circumstances or the situation, one embodiment of the present invention does not need to be applied to a light-emitting element. Alternatively, for example, one embodiment of the present invention includes a first organic compound, a second organic compound, and a guest material capable of converting triplet excitation energy into light emission, and the LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. However, one embodiment of the present invention is not limited thereto. In some cases or depending on the circumstances, in one embodiment of the present invention, for example, the LUMO level of the first organic compound does not have to be lower than the LUMO level of the second organic compound. Alternatively, the HOMO level of the first organic compound does not have to be lower than the HOMO level of the second organic compound. Alternatively, for example, although an example in which the first organic compound and the second organic compound form an exciplex is described in one embodiment of the present invention, this embodiment is not limited thereto. Alternatively, in some cases or depending on the circumstances, in one embodiment of the present invention, for example, the first organic compound and the second organic compound do not have to form an exciplex. Alternatively, for example, although an example in which the LUMO level of the guest material is higher than the LUMO level of the first organic compound and the HOMO level of the guest material is lower than the HOMO level of the second organic compound is described in one embodiment of the present invention, this embodiment is not limited thereto. In some cases or depending on the situation, in one embodiment of the present invention, for example, the LUMO level of the guest material may not be higher than the LUMO level of the first organic compound, or the HOMO level of the guest material may not be lower than the HOMO level of the second organic compound.

[0265] The structure described in this embodiment mode can be used in appropriate combination with structures described in other embodiments.

[0266] 4A and 4B , a light-emitting device is formed by forming a plurality of the light-emitting devices 130 described in the above embodiment over an insulating layer 175. In this embodiment, a light-emitting device according to one embodiment of the present invention will be described in detail.

[0267] The light emitting device 100 has a pixel section 177 in which a plurality of pixels 178 are arranged in a matrix. The pixel 178 has a sub-pixel 110R, a sub-pixel 110G, and a sub-pixel 110B.

[0268] In this specification and the like, matters common to, for example, the subpixel 110R, the subpixel 110G, and the subpixel 110B may be described by referring to the subpixel 110. Furthermore, for components distinguished by alphabets, matters common to the corresponding structures may be described by using symbols without the alphabets.

[0269] The sub-pixel 110R emits red light, the sub-pixel 110G emits green light, and the sub-pixel 110B emits blue light. This allows an image to be displayed in the pixel portion 177. Note that in this embodiment, sub-pixels of three colors, red (R), green (G), and blue (B), are described as an example, but the present invention is not limited to this configuration. That is, combinations of sub-pixels of other colors may also be used. For example, the number of sub-pixels is not limited to three, and may be four or more. Examples of four sub-pixels include sub-pixels of four colors: R, G, B, and white (W); sub-pixels of four colors: R, G, B, and Y; and sub-pixels of R, G, B, and infrared (IR).

[0270] In this specification, the row direction may be referred to as the X direction, and the column direction may be referred to as the Y direction. The X direction and the Y direction intersect, for example, perpendicularly.

[0271] 4A shows an example in which subpixels of different colors are arranged side by side in the X direction, and subpixels of the same color are arranged side by side in the Y direction. Note that subpixels of different colors may also be arranged side by side in the Y direction, and subpixels of the same color may also be arranged side by side in the X direction.

[0272] A connection portion 140 and a region 141 may be provided outside the pixel portion 177. For example, the region 141 may be provided between the pixel portion 177 and the connection portion 140. An organic compound layer 103 is provided in the region 141. In addition, a conductive layer 151C is provided in the connection portion 140.

[0273] 4 shows an example in which the region 141 and the connection portion 140 are located on the right side of the pixel portion 177, but the positions of the region 141 and the connection portion 140 are not particularly limited. The region 141 and the connection portion 140 may be singular or plural.

[0274] 4B is an example of a cross-sectional view taken along dashed line A1-A2 in FIG. 4A . As shown in FIG. 4A , the light-emitting device 100 includes an insulating layer 171, a conductive layer 172 on the insulating layer 171, an insulating layer 173 on the insulating layer 171 and on the conductive layer 172, an insulating layer 174 on the insulating layer 173, and an insulating layer 175 on the insulating layer 174. The insulating layer 171 may be provided on a substrate (not shown). The insulating layers 175, 174, and 173 have openings that reach the conductive layer 172, and a plug 176 is provided to fill the opening.

[0275] In the pixel section 177, the light-emitting device 130 is provided on the insulating layer 175 and the plug 176. A protective layer 131 is provided to cover the light-emitting device 130. The substrate 120 is bonded to the protective layer 131 by a resin layer 122. An inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 may be provided between adjacent light-emitting devices 130.

[0276] 4B shows a plurality of cross sections of the inorganic insulating layer 125 and the insulating layer 127, it is preferable that the inorganic insulating layer 125 and the insulating layer 127 are connected to one another when the light-emitting device 100 is viewed from above. In other words, it is preferable that the insulating layer 127 has an opening on the first electrode.

[0277] 4B shows light-emitting device 130 as light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B. Light-emitting device 130R, light-emitting device 130G, and light-emitting device 130B emit light of different colors. For example, light-emitting device 130R can emit red light, light-emitting device 130G can emit green light, and light-emitting device 130B can emit blue light. Light-emitting device 130R, light-emitting device 130G, or light-emitting device 130B may also emit other visible light or infrared light.

[0278] The organic compound layer 103 has at least a light-emitting layer and may have other functional layers (a hole injection layer, a hole transport layer, a hole blocking layer, an electron blocking layer, an electron transport layer, an electron injection layer, etc.). The organic compound layer 103 and the common layer 104 may be combined to form functional layers (a hole injection layer, a hole transport layer, a hole blocking layer, a light-emitting layer, an electron blocking layer, an electron transport layer, an electron injection layer, etc.) included in an EL layer that emits light.

[0279] The light-emitting device of one embodiment of the present invention can be, for example, a top-emission type that emits light in a direction opposite to a substrate on which the light-emitting device is formed. Note that the light-emitting device of one embodiment of the present invention may also be a bottom-emission type.

[0280] The light-emitting device 130R has the same structure as that described in Embodiment 1. It includes a first electrode (pixel electrode) including a conductive layer 151R and a conductive layer 152R, an organic compound layer 103R on the first electrode, a common layer 104 on the organic compound layer 103R, and a second electrode (common electrode) 102 on the common layer.

[0281] Note that the common layer 104 is not necessarily provided. By providing the common layer 104, damage to the organic compound layer 103R in a later process can be reduced. Furthermore, when the common layer 104 is provided, the common layer 104 may function as an electron injection layer. When the common layer 104 functions as an electron injection layer, the stacked structure of the organic compound layer 103R and the common layer 104 corresponds to the organic compound layer 103 in Embodiment 1.

[0282] Here, the light-emitting device 130 has the structure shown in Embodiment 1. It includes a first electrode (pixel electrode) including a conductive layer 151 and a conductive layer 152, an organic compound layer 103 on the first electrode, a common layer 104 on the organic compound layer 103G, and a second electrode (common electrode) 102 on the common layer.

[0283] One of the pixel electrode and the common electrode of the light-emitting device functions as an anode and the other functions as a cathode. In the following description, unless otherwise specified, the pixel electrode functions as an anode and the common electrode functions as a cathode.

[0284] The organic compound layer 103R, the organic compound layer 103G, and the organic compound layer 103B are independent island-shaped layers, each for each light-emitting color. By providing the organic compound layer 103 in an island shape for each light-emitting device 130, leakage current between adjacent light-emitting devices 130 can be suppressed even in a high-resolution light-emitting device. This prevents crosstalk and realizes a light-emitting device with extremely high contrast. In particular, a light-emitting device with high current efficiency at low luminance can be realized.

[0285] The organic compound layer 103 may be provided so as to cover the top and side surfaces of the first electrode (pixel electrode) of the light-emitting device 130. This makes it easier to increase the aperture ratio of the light-emitting device 100 compared to a configuration in which the end of the organic compound layer 103 is located inside the end of the pixel electrode. Furthermore, covering the side surfaces of the pixel electrode of the light-emitting device 130 with the organic compound layer 103 prevents the pixel electrode from contacting the second electrode 102, thereby preventing short circuits in the light-emitting device 130. Furthermore, the distance between the light-emitting region of the organic compound layer 103 (i.e., the region overlapping with the pixel electrode) and the end of the organic compound layer 103 can be increased. Furthermore, since the end of the organic compound layer 103 may be damaged by processing, using a region away from the end of the organic compound layer 103 as the light-emitting region improves the reliability of the light-emitting device 130.

[0286] In the light-emitting device of one embodiment of the present invention, the first electrode (pixel electrode) of the light-emitting device may have a stacked-layer structure. For example, in the example shown in FIG. 4B , the first electrode of the light-emitting device 130 has a stacked-layer structure of a conductive layer 151 and a conductive layer 152.

[0287] For example, when the light-emitting device 100 is a top-emission type, the pixel electrode of the light-emitting device 130 preferably has a conductive layer 151 with high reflectivity to visible light and a conductive layer 152 that is transparent to visible light and has a high work function. The higher the reflectivity of the pixel electrode to visible light, the higher the extraction efficiency of light emitted from the organic compound layer 103. Furthermore, when the pixel electrode functions as an anode, the higher the work function of the pixel electrode, the easier it is to inject holes into the organic compound layer 103. Therefore, by forming the pixel electrode of the light-emitting device 130 into a stacked structure of the conductive layer 151 with high reflectivity to visible light and the conductive layer 152 with a high work function, the light-emitting device 130 can be a light-emitting device with high light extraction efficiency and low driving voltage.

[0288] Specifically, the reflectance of the conductive layer 151 with respect to visible light is preferably, for example, 40% to 100%, or 70% to 100%. When the conductive layer 152 is used as an electrode that transmits visible light, the transmittance of the conductive layer 152 with respect to visible light is preferably, for example, 40% or more.

[0289] Furthermore, when a film formed after forming a pixel electrode having a laminated structure is removed by a wet etching method or the like, the chemical solution used for etching may permeate the structure. If the impregnated chemical solution comes into contact with the pixel electrode, galvanic corrosion or the like may occur between the multiple layers that make up the pixel electrode, which may cause deterioration of the pixel electrode.

[0290] Therefore, it is preferable to form the conductive layer 152 so as to cover the top surface and side surfaces of the conductive layer 151. By covering the conductive layer 151 with the conductive layer 152, the impregnated chemical solution does not come into contact with the conductive layer 151, and galvanic corrosion of the pixel electrode can be suppressed. Therefore, the light-emitting device 100 can be manufactured by a method with a high yield, and therefore can be a low-cost light-emitting device. Furthermore, since the occurrence of defects in the light-emitting device 100 can be suppressed, the light-emitting device 100 can be a highly reliable light-emitting device.

[0291] For example, a metal material can be used as the conductive layer 151. Specifically, metals such as aluminum (Al), titanium (Ti), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), gallium (Ga), zinc (Zn), indium (In), tin (Sn), molybdenum (Mo), tantalum (Ta), tungsten (W), palladium (Pd), gold (Au), platinum (Pt), silver (Ag), yttrium (Y), and neodymium (Nd), as well as alloys containing appropriate combinations of these metals, can also be used.

[0292] An oxide containing one or more selected from indium, tin, zinc, gallium, titanium, aluminum, and silicon can be used for the conductive layer 152. For example, it is preferable to use a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon. In particular, indium tin oxide containing silicon has a large work function, for example, a work function of 4.0 eV or more, and therefore can be suitably used for the conductive layer 152.

[0293] The conductive layer 151 and the conductive layer 152 may have a stacked structure of multiple layers containing different materials. In this case, the conductive layer 151 may include a layer using a material that can be used for the conductive layer 152, such as a conductive oxide, or the conductive layer 152 may include a layer using a material that can be used for the conductive layer 151, such as a metal material. For example, when the conductive layer 151 has a stacked structure of two or more layers, the layer in contact with the conductive layer 152 can be a layer containing the same material as the layer of the conductive layer 152 in contact with the conductive layer 151.

[0294] Note that the conductive layer 151 preferably has a tapered edge. Specifically, the conductive layer 151 preferably has a tapered edge with a taper angle of less than 90°. In this case, the conductive layer 152 provided along the side surface of the conductive layer 151 also has a tapered edge. By tapering the side surface of the conductive layer 152, coverage of the organic compound layer 103 provided along the side surface of the conductive layer 152 can be improved.

[0295] In the case where the conductive layer 151 or the conductive layer 152 has a layered structure, at least one side surface thereof preferably has a tapered shape. In addition, in the layered structure constituting each conductive layer, each layer may have a different tapered shape.

[0296] 5A illustrates a case where the conductive layer 151 has a stacked structure of multiple layers containing different materials. As shown in FIG. 5A, the conductive layer 151 has a structure including a conductive layer 151_1, a conductive layer 151_2 on the conductive layer 151_1, and a conductive layer 151_3 on the conductive layer 151_2. That is, the conductive layer 151 illustrated in FIG. 5A has a three-layer stacked structure. In this way, when the conductive layer 151 has a stacked structure of multiple layers, the reflectivity of at least one layer constituting the conductive layer 151 to visible light may be made higher than the reflectivity of the conductive layer 152 to visible light.

[0297] 5A , the conductive layer 151_2 is sandwiched between the conductive layer 151_1 and the conductive layer 151_3. The conductive layer 151_1 and the conductive layer 151_3 are preferably made of a material that is less likely to change in quality than the conductive layer 151_2. For example, the conductive layer 151_1 can be made of a material that is less likely to migrate due to contact with the insulating layer 175 than the conductive layer 151_2. The conductive layer 151_3 can be made of a material that is less likely to oxidize than the conductive layer 151_2 and has an oxide with lower electrical resistivity than the oxide of the material used for the conductive layer 151_3.

[0298] As described above, by sandwiching the conductive layer 151_2 between the conductive layer 151_1 and the conductive layer 151_3, the range of material options for the conductive layer 151_2 can be expanded. This allows the conductive layer 151_2 to have a higher reflectivity for visible light than at least one of the conductive layer 151_1 and the conductive layer 151_3. For example, aluminum can be used for the conductive layer 151_2. Note that an alloy containing aluminum may be used for the conductive layer 151_2. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to migrate than aluminum even when in contact with the insulating layer 175, can be used for the conductive layer 151_1. Furthermore, titanium, which has a lower reflectivity for visible light than aluminum but is less likely to oxidize than aluminum and has an oxide with lower electrical resistivity than aluminum oxide, can be used for the conductive layer 151_3.

[0299] Alternatively, silver or an alloy containing silver may be used for the conductive layer 151_3. Silver has a higher reflectivity to visible light than titanium. Furthermore, silver is less susceptible to oxidation than aluminum, and the electrical resistivity of silver oxide is lower than that of aluminum oxide. As described above, using silver or an alloy containing silver for the conductive layer 151_3 can favorably increase the reflectivity of the conductive layer 151 to visible light while suppressing an increase in the electrical resistance of the pixel electrode due to oxidation of the conductive layer 151_2. Here, an alloy containing silver may be, for example, an alloy of silver, palladium, and copper (Ag-Pd-Cu, also referred to as APC). Note that using silver or an alloy containing silver for the conductive layer 151_3 and aluminum for the conductive layer 151_2 can increase the reflectivity of the conductive layer 151_3 to visible light compared to the reflectivity of the conductive layer 151_2 to visible light. Here, silver or an alloy containing silver may be used for the conductive layer 151_2. Alternatively, the conductive layer 151_1 may be formed using silver or an alloy containing silver.

[0300] On the other hand, a film using titanium has better etching processability than a film using silver. Therefore, by using titanium for the conductive layer 151_3, the conductive layer 151_3 can be easily formed. Note that a film using aluminum also has better etching processability than a film using silver.

[0301] As described above, the conductive layer 151 has a stacked structure of a plurality of layers, whereby the characteristics of the light-emitting device can be improved. For example, the light-emitting device 100 can have high light extraction efficiency and high reliability.

[0302] Here, when a microcavity structure is applied to the light-emitting device 130, the light extraction efficiency of the light-emitting device 100 can be suitably improved by using silver, which is a material with high reflectivity for visible light, or an alloy containing silver as the conductive layer 151_3.

[0303] 5A , depending on the material selection or processing method of the conductive layer 151, the side surface of the conductive layer 151_2 may be located inside the side surfaces of the conductive layer 151_1 and the conductive layer 151_3, forming a protruding portion, which may reduce the coverage of the conductive layer 152 with respect to the conductive layer 151, and may cause a step disconnection of the conductive layer 152.

[0304] Therefore, it is preferable to provide an insulating layer 156 as shown in Fig. 5A. Fig. 5A shows an example in which the insulating layer 156 is provided over the conductive layer 151_1 so as to have a region overlapping with the side surface of the conductive layer 151_2. This can prevent the conductive layer 152 from being broken or thinned due to the protrusion, thereby suppressing poor connection or an increase in driving voltage.

[0305] 5A illustrates a structure in which the side surfaces of the conductive layer 151_2 are entirely covered with the insulating layer 156, but the side surfaces of the conductive layer 151_2 may not be partially covered with the insulating layer 156. Similarly, in pixel electrodes having structures described below, the side surfaces of the conductive layer 151_2 may not be partially covered with the insulating layer 156.

[0306] 5A, the insulating layer 156 preferably has a curved surface. This can reduce the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156, compared to when the side surfaces of the insulating layer 156 are vertical (parallel to the Z direction). Even when the insulating layer 156 has a tapered side surface, specifically a tapered shape with a taper angle of less than 90°, the occurrence of discontinuities in the conductive layer 152 covering the insulating layer 156 can be reduced, compared to when the side surfaces of the insulating layer 156 are vertical. As described above, the light-emitting device 100 can be manufactured using a method with a high yield. Furthermore, the occurrence of defects can be reduced, resulting in a highly reliable light-emitting device.

[0307] Note that one embodiment of the present invention is not limited thereto. For example, other structures of the first electrode 101 are shown in FIGS.

[0308] FIG. 5B shows a structure in which the insulating layer 156 covers not only the side surfaces of the conductive layer 151_2 but also the side surfaces of the conductive layers 151_1, 151_2, and 151_3 in the first electrode 101 of FIG.

[0309] FIG. 5C shows a configuration in which the insulating layer 156 is not provided in the first electrode 101 of FIG.

[0310] FIG. 5D shows a structure in which the conductive layer 151 does not have a layered structure and the conductive layer 152 has a layered structure in the first electrode 101 of FIG.

[0311] The conductive layer 152_1 has higher adhesion to the conductive layer 152_2 than the insulating layer 175, for example. The conductive layer 152_1 can be formed using an oxide containing one or more of indium, tin, zinc, gallium, titanium, aluminum, and silicon. For example, a conductive oxide containing one or more of indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, zinc oxide containing gallium, titanium oxide, indium titanium oxide, zinc titanate, aluminum zinc oxide, indium zinc oxide containing gallium, indium zinc oxide containing aluminum, indium tin oxide containing silicon, and indium zinc oxide containing silicon can be preferably used. This can prevent peeling of the conductive layer 152_2. Furthermore, the conductive layer 152_2 can be configured not to be in contact with the insulating layer 175.

[0312] The conductive layer 152_2 has a higher reflectivity for visible light (for example, reflectivity for light with a predetermined wavelength in the range of 400 nm to 750 nm) than the conductive layers 151, 152_1, and 152_2. The reflectivity of the conductive layer 152_2 for visible light can be, for example, 70% to 100%, preferably 80% to 100%, and more preferably 90% to 100%. For the conductive layer 152_2, for example, silver or an alloy containing silver can be used. Examples of alloys containing silver include an alloy of silver, palladium, and copper (APC). As described above, the light-emitting device 100 can have high light extraction efficiency. Note that a metal other than silver may be used for the conductive layer 152_2.

[0313] When the conductive layers 151 and 152 function as anodes, the conductive layer 152_1 preferably has a high work function. The conductive layer 152_3 has a work function higher than that of the conductive layer 152_2, for example. The conductive layer 152_3 can be made of the same material as that of the conductive layer 152_1, for example. For example, the conductive layer 152_1 and the conductive layer 152_3 can be made of the same material.

[0314] Note that when the conductive layers 151 and 152 function as cathodes, they preferably have a low work function. For example, the conductive layer 152_3 has a work function smaller than that of the conductive layer 152_2.

[0315] The conductive layer 152_3 preferably has high transmittance to visible light (for example, transmittance to light with a predetermined wavelength in the range of 400 nm to 750 nm). For example, the transmittance of the conductive layer 152_3 to visible light is preferably higher than that of the conductive layer 151 and the conductive layer 152_2. For example, the transmittance of the conductive layer 152_3 to visible light can be 60% to 100%, preferably 70% to 100%, and more preferably 80% to 100%. As a result, the amount of light emitted from the organic compound layer 103 that is absorbed by the conductive layer 152_3 can be reduced. As described above, the conductive layer 152_2 under the conductive layer 152_3 can have high reflectance to visible light. Therefore, the light-emitting device 100 can have high light extraction efficiency.

[0316] Next, an example of a method for manufacturing the light-emitting device 100 having the structure shown in FIG. 4 will be described with reference to FIGS.

[0317] [Fabrication Method Example 1] Thin films (insulating films, semiconductor films, conductive films, etc.) constituting a light-emitting device can be formed using a sputtering method, a chemical vapor deposition method, a vacuum evaporation method, a pulsed laser deposition (PLD) method, an ALD method, etc. CVD methods include a plasma enhanced chemical vapor deposition (PECVD) method and a thermal CVD method. One type of thermal CVD method is a metal organic chemical vapor deposition (MOCVD) method.

[0318] Furthermore, thin films (insulating films, semiconductor films, conductive films, etc.) constituting the light-emitting device can be formed by a wet film-forming method such as spin coating, dipping, spray coating, inkjet, dispensing, screen printing, offset printing, doctor knife method, slit coating, roll coating, curtain coating, or knife coating.

[0319] In particular, vacuum processes such as vapor deposition, and solution processes such as spin coating and inkjet printing can be used to fabricate light-emitting devices. Vapor deposition methods include physical vapor deposition (PVD) methods such as sputtering, ion plating, ion beam deposition, molecular beam deposition, and vacuum deposition, and chemical vapor deposition (CVD). In particular, functional layers (hole injection layer, hole transport layer, hole blocking layer, light-emitting layer, electron blocking layer, electron transport layer, electron injection layer, etc.) included in the organic compound layer can be formed by vapor deposition (vacuum deposition, etc.), coating methods (dip coating, die coating, bar coating, spin coating, spray coating, etc.), printing methods (inkjet printing, screen (stencil printing), offset (lithographic printing), flexography (relief printing), gravure, microcontact printing, etc.), etc.

[0320] Furthermore, when processing the thin film that constitutes the light-emitting device, it can be processed using, for example, a photolithography method. Alternatively, the thin film may be processed using a nanoimprint method, a sandblasting method, a lift-off method, etc. Furthermore, the island-shaped thin film may be directly formed by a film formation method using a shielding mask such as a metal mask.

[0321] There are two typical photolithography methods: one is to form a resist mask on the thin film to be processed, process the thin film by etching, and then remove the resist mask; the other is to form a photosensitive thin film, and then process the thin film into the desired shape by exposure and development.

[0322] The thin film can be etched by dry etching, wet etching, sandblasting, or the like.

[0323] In a vacuum process such as vapor deposition, the angle θ of the substrate surface relative to the horizontal is maintained at 45 degrees or more and 135 degrees or less, preferably 55 degrees or more and 80 degrees or less, or 100 degrees or more and 125 degrees or less. Similarly, when moving between a film formation apparatus and a processing chamber, and between film formation apparatuses, the substrate can be moved while maintaining the angle θ of the substrate surface relative to the horizontal at 45 degrees or more and 135 degrees or less, preferably 55 degrees or more and 80 degrees or less, or 100 degrees or more and 125 degrees or less.

[0324] In particular, in the processing chamber and film formation apparatus, it is preferable that the angle θ of the substrate surface with respect to the horizontal direction is greater than 90 degrees. In other words, by orienting the substrate surface upward with respect to the direction of gravity (vertical downward), it is possible to make the substrate less likely to bend.

[0325] Therefore, by having the substrate surface at an angle relative to the horizontal plane, the volume (space) occupied by the process chamber (film formation chamber) or film formation apparatus can be reduced, and a film formation apparatus with a smaller size and footprint can be provided.

[0326] On the other hand, solution processes such as photolithography, spin coating, or inkjet printing are carried out while maintaining the angle θ of the substrate surface relative to the horizontal direction at more than 135 degrees and not more than 180 degrees, preferably 170 degrees or more and not more than 180 degrees.

[0327] In other words, in the resist coating process and exposure process, the substrate is held at a smaller angle to the horizontal plane than in the film formation process. Alternatively, it is preferable that the substrate is held as horizontal as possible. By configuring the substrate so that the tilt can be changed as needed, it is possible to form a resist that occupies a small area in the manufacturing system and has minimal coating unevenness.

[0328] 6A , an insulating layer 171 is formed on a substrate (not shown). Subsequently, conductive layers 172 and 179 are formed on the insulating layer 171, and an insulating layer 173 is formed on the insulating layer 171 so as to cover the conductive layers 172 and 179. Subsequently, an insulating layer 174 is formed on the insulating layer 173, and an insulating layer 175 is formed on the insulating layer 174.

[0329] The substrate may be a substrate having heat resistance sufficient to withstand at least a subsequent heat treatment. When an insulating substrate is used, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, an organic resin substrate, or the like may be used. Furthermore, a semiconductor substrate such as a single crystal semiconductor substrate made of silicon or silicon carbide, a polycrystalline semiconductor substrate, a compound semiconductor substrate such as silicon germanium, or an SOI substrate may be used.

[0330] 6A, openings are formed in the insulating layers 175, 174, and 173, reaching the conductive layer 172. Then, plugs 176 are formed to fill the openings.

[0331] 6A , a conductive film 151f, which will later become the conductive layers 151R, 151G, 151B, and 151C, is formed on the plug 176 and the insulating layer 175. The conductive film 151f can be formed by, for example, sputtering or vacuum deposition. The conductive film 151f can be made of, for example, a metal material.

[0332] Here, the angle θ of the substrate surface with respect to the horizontal plane may be adjusted. Specifically, the substrate surface may be held at an angle θ of more than 135 degrees and not more than 180 degrees, preferably 170 degrees or more and not more than 180 degrees, with respect to the horizontal direction. Adjusting the angle θ can suppress uneven application of the photosensitive material (photoresist).

[0333] 6A, a resist mask 191 is formed over the conductive film 151f, for example. The resist mask 191 can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0334] After exposure, the angle θ of the substrate surface with respect to the horizontal plane may be adjusted. Specifically, by holding the substrate surface at an angle of 45 degrees to 135 degrees, preferably 55 degrees to 80 degrees, or 100 degrees to 125 degrees with respect to the horizontal, the volume occupied by the film formation chamber or film formation apparatus can be reduced, and the film formation chamber or film formation apparatus can be made smaller and have a smaller footprint.

[0335] 6B , for example, the conductive film 151f in a region that does not overlap with the resist mask 191 is removed by, for example, etching, specifically, dry etching. Note that if the conductive film 151f includes a layer using a conductive oxide such as indium tin oxide, the layer may be removed by wet etching. As a result, the conductive layer 151 is formed. Note that, for example, when part of the conductive film 151f is removed by dry etching, a recess (also referred to as a countersink) may be formed in a region of the insulating layer 175 that does not overlap with the conductive layer 151.

[0336] 6C, the resist mask 191 is removed. The resist mask 191 can be removed by ashing using oxygen plasma, or by ashing using oxygen gas and CF ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ Alternatively, a Group 18 element such as He may be used. Alternatively, the resist mask 191 may be removed by wet etching.

[0337] 6D , an insulating film 156f, which will later become the insulating layer 156R, the insulating layer 156G, the insulating layer 156B, and the insulating layer 156C, is formed on the conductive layer 151R, the conductive layer 151G, the conductive layer 151B, the conductive layer 151C, and the insulating layer 175. The insulating film 156f can be formed by, for example, a CVD method, an ALD method, a sputtering method, or a vacuum deposition method.

[0338] The insulating film 156f can be formed using an inorganic material. For example, the insulating film 156f can be formed using an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using an oxide insulating film containing silicon, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film. For example, the insulating film 156f can be formed using silicon oxynitride.

[0339] 6E, the insulating film 156f is processed to form insulating layers 156R, 156G, 156B, and 156C. For example, the insulating layer 156 can be formed by uniformly etching the top surface of the insulating film 156f. Such uniform etching and planarization is also called an etch-back process. The insulating layer 156 may also be formed by photolithography.

[0340] 7A , a conductive film 152f, which will later become the conductive layers 152R, 152G, 152B, and 152C, is formed on the conductive layers 151R, 151G, 151B, 151C, the insulating layers 156R, 156G, 156B, 156C, and the insulating layer 175. Specifically, the conductive film 152f is formed so as to cover, for example, the conductive layers 151R, 151G, 151B, 151C, the insulating layers 156R, 156G, 156B, and 156C.

[0341] The conductive film 152f can be formed by, for example, sputtering or vacuum evaporation. Alternatively, the conductive film 152f can be formed by ALD. Alternatively, the conductive film 152f can be formed using, for example, a conductive oxide. Alternatively, the conductive film 152f can have a stacked structure of a film using a metal material and a film using a conductive oxide thereon. For example, the conductive film 152f can have a stacked structure of a film using titanium, silver, or an alloy containing silver and a film using a conductive oxide thereon.

[0342] 7B , the conductive film 152f is processed by, for example, photolithography to form conductive layers 152R, 152G, 152B, and 152C. Specifically, for example, after forming a resist mask, part of the conductive film 152f is removed by etching. The conductive film 152f can be removed by, for example, wet etching. Alternatively, the conductive film 152f may be removed by dry etching. In this manner, a pixel electrode including the conductive layer 151 and the conductive layer 152 is formed.

[0343] Subsequently, it is preferable to perform hydrophobic treatment on the conductive layer 152. The hydrophobic treatment can change the surface to be treated from hydrophilic to hydrophobic, or can increase the hydrophobicity of the surface to be treated. By performing the hydrophobic treatment on the conductive layer 152, adhesion between the conductive layer 152 and the organic compound layer 103 formed in a later step can be increased, and film peeling can be suppressed. Note that the hydrophobic treatment is not necessarily performed.

[0344] Subsequently, as shown in FIG. 7C, an organic compound film 103Bf, which will later become the organic compound layer 103B, is formed on the conductive layers 152B, 152G, 152R, and the insulating layer 175.

[0345] In the present invention, the organic compound film 103Bf has a plurality of organic compound layers each having at least one light-emitting layer. Specifically, the structure of the light-emitting device 130 described in Embodiment 1 can be referred to. Alternatively, the organic compound film 103Bf may have a structure in which a plurality of organic compound layers each having at least one light-emitting layer are stacked with an intermediate layer interposed therebetween.

[0346] 7C , the organic compound film 103Bf is not formed on the conductive layer 152C. For example, by using a mask for defining the film formation area (also called an area mask or a rough metal mask to distinguish it from a fine metal mask), the organic compound film 103Bf can be formed only in the desired region. By employing a film formation process using an area mask and a processing process using a resist mask, the light-emitting device can be manufactured through a relatively simple process.

[0347] The organic compound film 103Bf can be formed by, for example, a vapor deposition method, specifically a vacuum deposition method. Alternatively, the organic compound film 103Bf may be formed by a transfer method, a printing method, an inkjet method, a coating method, or the like.

[0348] Subsequently, as shown in FIG. 7D, a sacrificial film 158Bf, which will later become the sacrificial layer 158B, and a mask film 159Bf, which will later become the mask layer 159B, are formed in this order on the organic compound film 103Bf.

[0349] The sacrificial film 158Bf and the mask film 159Bf can be formed by, for example, sputtering, ALD (thermal ALD, PEALD), CVD, or vacuum deposition. Alternatively, they may be formed by the wet film formation method described above.

[0350] The sacrificial film 158Bf and the mask film 159Bf are formed at a temperature lower than the heat-resistant temperature of the organic compound film 103Bf. The substrate temperature when forming the sacrificial film 158Bf and the mask film 159Bf is typically 200° C. or lower, preferably 150° C. or lower, more preferably 120° C. or lower, more preferably 100° C. or lower, and even more preferably 80° C. or lower.

[0351] In this embodiment, an example is shown in which the mask film is formed with a two-layer structure of the sacrificial film 158Bf and the mask film 159Bf, but the mask film may have a single-layer structure or a laminated structure of three or more layers.

[0352] By providing a sacrificial layer on the organic compound film 103Bf, damage to the organic compound film 103Bf during the manufacturing process of the light-emitting device can be reduced, and the reliability of the light-emitting device can be improved.

[0353] The sacrificial film 158Bf is made of a film that is highly resistant to the processing conditions of the organic compound film 103Bf, specifically, a film that has a high etching selectivity with respect to the organic compound film 103Bf, and the mask film 159Bf is made of a film that has a high etching selectivity with respect to the sacrificial film 158Bf.

[0354] The sacrificial film 158Bf and the mask film 159Bf are preferably made of films that can be removed by wet etching, which can reduce damage to the organic compound film 103Bf during processing of the sacrificial film 158Bf and the mask film 159Bf compared to when dry etching is used.

[0355] When wet etching is used, it is particularly preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also called mixed acid).

[0356] The sacrificial film 158Bf and the mask film 159Bf may each be made of one or more of a metal film, an alloy film, a metal oxide film, a semiconductor film, an organic insulating film, an inorganic insulating film, or the like.

[0357] Furthermore, by using a film containing a material that blocks ultraviolet light for the sacrificial film 158Bf and the mask film 159Bf, it is possible to prevent the organic compound layer from being irradiated with ultraviolet light during, for example, an exposure process. Suppressing damage to the organic compound layer due to ultraviolet light can improve the reliability of the light-emitting device.

[0358] The same effect can be achieved when a film containing a material that blocks ultraviolet light is used as the material for the inorganic insulating film 125f, which will be described later.

[0359] The sacrificial film 158Bf and the mask film 159Bf may be made of a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, titanium, aluminum, yttrium, zirconium, or tantalum, or an alloy material containing such a metal material. In particular, it is preferable to use a low-melting-point material such as aluminum or silver.

[0360] Furthermore, for the sacrificial film 158Bf and the mask film 159Bf, metal oxides such as In—Ga—Zn oxide, indium oxide, In—Zn oxide, In—Sn oxide, indium titanium oxide (In—Ti oxide), indium tin zinc oxide (In—Sn—Zn oxide), indium titanium zinc oxide (In—Ti—Zn oxide), indium gallium tin zinc oxide (In—Ga—Sn—Zn oxide), and indium tin oxide containing silicon can be used, respectively.

[0361] In addition, instead of the above gallium, an element M (M is one or more elements selected from aluminum, silicon, boron, yttrium, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium) may be used.

[0362] Furthermore, using semiconductor materials such as silicon or germanium for the sacrificial film 158Bf and the mask film 159Bf is preferable because they have high compatibility with semiconductor manufacturing processes. Oxides or nitrides of the above semiconductor materials can also be used. Non-metallic materials such as carbon or their compounds can also be used. Metals such as titanium, tantalum, tungsten, chromium, and aluminum, or alloys containing one or more of these metals can also be used. Oxides containing the above metals, such as titanium oxide or chromium oxide, or nitrides such as titanium nitride, chromium nitride, or tantalum nitride can also be used.

[0363] Furthermore, various inorganic insulating films can be used for the sacrificial film 158Bf and the mask film 159Bf. In particular, oxide insulating films are preferable because they have higher adhesion to the organic compound film 103Bf than nitride insulating films. For example, inorganic insulating materials such as aluminum oxide, hafnium oxide, and silicon oxide can be used for the sacrificial film 158Bf and the mask film 159Bf. For example, aluminum oxide films can be formed as the sacrificial film 158Bf and the mask film 159Bf using the ALD method. Using the ALD method is preferable because it reduces damage to the underlying layer (particularly the organic compound layer).

[0364] Alternatively, an organic material may be used for one or both of the sacrificial film 158Bf and the mask film 159Bf. For example, the organic material may be a material that is soluble in a solvent that is chemically stable with respect to at least the film located at the top of the organic compound film 103Bf. Materials that dissolve in water or alcohol are particularly suitable. When forming a film of such a material, it is preferable to apply the material dissolved in a solvent such as water or alcohol by a wet film formation method, and then perform a heat treatment to evaporate the solvent. Performing the heat treatment under a reduced pressure atmosphere allows the solvent to be removed at a low temperature in a short time, thereby reducing thermal damage to the organic compound film 103Bf, which is preferable.

[0365] The sacrificial film 158Bf and the mask film 159Bf may each be made of an organic resin such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin, or a fluororesin such as a perfluoropolymer.

[0366] For example, the sacrificial film 158Bf may be an organic film (e.g., a PVA film) formed using either a vapor deposition method or the above-mentioned wet film formation method, and the mask film 159Bf may be an inorganic film (e.g., a silicon nitride film) formed using a sputtering method.

[0367] 7D, a resist mask 190B is formed on the mask film 159Bf. The resist mask 190B can be formed by applying a photosensitive material (photoresist) and then performing exposure and development.

[0368] Before applying the photosensitive material (photoresist), the angle θ of the substrate relative to the horizontal plane may be adjusted. Specifically, the angle θ of the substrate surface relative to the horizontal direction may be maintained at an angle θ of greater than 135 degrees and less than 180 degrees, preferably greater than 170 degrees and less than 180 degrees. Adjusting the angle θ can suppress uneven application of the photosensitive material (photoresist). In this case, the angle θ of the substrate relative to the horizontal plane may be adjusted after exposure. Specifically, by maintaining the angle θ of the substrate surface relative to the horizontal direction at an angle of 45 degrees to 135 degrees, preferably greater than 55 degrees and less than 80 degrees, or greater than 100 degrees and less than 125 degrees, the volume occupied by the film formation chamber or film formation apparatus can be reduced, resulting in a smaller size and smaller footprint.

[0369] The resist mask 190B may be made of either a positive resist material or a negative resist material.

[0370] The resist mask 190B is provided in a position overlapping with the conductive layer 152B. The resist mask 190B is preferably also provided in a position overlapping with the conductive layer 152C. This can prevent the conductive layer 152C from being damaged during the manufacturing process of the light-emitting device. Note that the resist mask 190B does not necessarily have to be provided on the conductive layer 152C. Furthermore, as shown in the cross-sectional view between B1 and B2 in FIG. 7C , the resist mask 190B is preferably provided so as to cover from the end of the organic compound film 103Bf to the end of the conductive layer 152C (the end on the organic compound film 103Bf side).

[0371] 7E, a resist mask 190B is used to remove a portion of the mask film 159Bf to form a mask layer 159B. The mask layer 159B remains on the conductive layer 152B and the conductive layer 152C. The resist mask 190B is then removed. The mask layer 159B is used as a mask (also referred to as a hard mask) to remove a portion of the sacrificial film 158Bf to form a sacrificial layer 158B.

[0372] The sacrificial film 158Bf and the mask film 159Bf can be processed by wet etching or dry etching, respectively, and are preferably processed by wet etching.

[0373] The wet etching method can reduce damage to the organic compound film 103Bf when processing the sacrificial film 158Bf and the mask film 159Bf compared to the dry etching method. When the wet etching method is used, it is preferable to use a chemical solution such as a developer, a tetramethylammonium hydroxide (TMAH) aqueous solution, dilute hydrofluoric acid, oxalic acid, phosphoric acid, acetic acid, nitric acid, or a mixture thereof.

[0374] In processing the mask film 159Bf, the organic compound film 103Bf is not exposed, and therefore the range of processing methods to be selected is wider than in processing the sacrificial film 158Bf. Specifically, even when a gas containing oxygen is used as an etching gas in processing the mask film 159Bf, deterioration of the organic compound film 103Bf can be further suppressed.

[0375] When wet etching is used, it is particularly preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also called mixed acid).

[0376] Furthermore, when dry etching is used to process the sacrificial film 158Bf, deterioration of the organic compound film 103Bf can be suppressed by not using a gas containing oxygen as the etching gas. ４ , C ４ F ８ , S.F. ６ , CHF ３ , Cl ２ , H ２ O, BCl ３ It is preferable to use a gas containing a Group 18 element such as He or the like as the etching gas.

[0377] The resist mask 190B can be removed by the same method as the resist mask 191. At this time, the sacrificial film 158Bf is located on the outermost surface and the organic compound film 103Bf is not exposed, so that damage to the organic compound film 103Bf can be suppressed in the process of removing the resist mask 190B. Furthermore, the range of options for removing the resist mask 190B can be expanded.

[0378] 7E, the organic compound film 103Bf is processed to form the organic compound layer 103B. For example, the mask layer 159B and the sacrificial layer 158B are used as a hard mask to remove a portion of the organic compound film 103Bf, thereby forming the organic compound layer 103B.

[0379] 7E, a stacked structure of the organic compound layer 103B, the sacrificial layer 158B, and the mask layer 159B remains on the conductive layer 152B, and the conductive layer 152G and the conductive layer 152B are exposed.

[0380] The organic compound film 103Bf can be processed by dry etching or wet etching. For example, when processing by dry etching, an etching gas containing oxygen can be used. When the etching gas contains oxygen, the etching rate can be increased. Therefore, etching can be performed under low power conditions while maintaining a sufficiently high etching rate. This makes it possible to suppress damage to the organic compound film 103Bf. Furthermore, it is possible to suppress problems such as adhesion of reaction products that occur during etching.

[0381] Alternatively, an etching gas that does not contain oxygen may be used, for example, by using an etching gas that does not contain oxygen, deterioration of the organic compound film 103Bf can be suppressed.

[0382] As described above, in one embodiment of the present invention, the resist mask 190B is formed over the mask film 159Bf, and part of the mask film 159Bf is removed using the resist mask 190B to form the mask layer 159B. Then, part of the organic compound film 103Bf is removed using the mask layer 159B as a hard mask to form the organic compound layer 103B. Therefore, it can be said that the organic compound layer 103B is formed by processing the organic compound film 103Bf using photolithography. Note that part of the organic compound film 103Bf may be removed using the resist mask 190B. Then, the resist mask 190B may be removed.

[0383] Here, the conductive layer 152G may be subjected to hydrophobic treatment as needed. During processing of the organic compound film 103Bf, for example, the surface state of the conductive layer 152G may change to a hydrophilic state. For example, by subjecting the conductive layer 152G to hydrophobic treatment, for example, the adhesion between the conductive layer 152G and a layer (here, the organic compound layer 103G) formed in a later process can be improved, and film peeling can be suppressed.

[0384] Subsequently, as shown in FIG. 8A, an organic compound film 103Gf, which will later become the organic compound layer 103G, is formed on the conductive layer 152G, the conductive layer 152R, the mask layer 159B, and the insulating layer 175.

[0385] The organic compound film 103Gf can be formed by the same method as that used to form the organic compound film 103Bf, and can have the same structure as the organic compound film 103Bf.

[0386] 8B , a sacrificial film 158Gf, which will later become the sacrificial layer 158G, and a mask film 159Gf, which will later become the mask layer 159G, are sequentially formed on the organic compound film 103Gf and the mask layer 159B. A resist mask 190G is then formed. The materials and formation methods for the sacrificial film 158Gf and the mask film 159Gf are the same as those applicable to the sacrificial film 158Bf and the mask film 159Bf. The materials and formation methods for the resist mask 190G are the same as those applicable to the resist mask 190B.

[0387] The resist mask 190G is provided in a position overlapping with the conductive layer 152G.

[0388] 8C, a resist mask 190G is used to remove a portion of the mask film 159Gf to form a mask layer 159G. The mask layer 159G remains on the conductive layer 152G. The resist mask 190G is then removed. The mask layer 159G is then used as a mask to remove a portion of the sacrificial film 158Gf to form a sacrificial layer 158G. The organic compound film 103Gf is then processed to form the organic compound layer 103G. For example, the mask layer 159G and the sacrificial layer 158G are used as hard masks to remove a portion of the organic compound film 103Gf to form the organic compound layer 103G.

[0389] 8C, a laminated structure of the organic compound layer 103G, the sacrificial layer 158G, and the mask layer 159G remains on the conductive layer 152G, and the mask layer 159B and the conductive layer 152R are exposed.

[0390] In addition, for example, the conductive layer 152R may be subjected to a hydrophobic treatment.

[0391] Subsequently, as shown in FIG. 9A, an organic compound film 103Rf, which will later become the organic compound layer 103R, is formed on the conductive layer 152R, the mask layer 159G, the mask layer 159B, and the insulating layer 175.

[0392] The organic compound film 103Rf can be formed by the same method as that used to form the organic compound film 103Gf, and can have the same structure as the organic compound film 103Gf.

[0393] 9B and 9C , a resist mask 190R is used to form a sacrificial layer 158 from the sacrificial film 158Rf, a mask layer 159R from the mask film 159Rf, or an organic compound layer 103R from the organic compound film 103Rf. For methods of forming the sacrificial layer 158R, the mask layer 159R, and the organic compound layer 103R, refer to the description of the organic compound layer 103G.

[0394] It is preferable that the side surfaces of the organic compound layers 103B, 103G, and 103R are perpendicular or substantially perpendicular to the surface on which they are formed. For example, it is preferable that the angle formed between the surface on which they are formed and these side surfaces be 60 degrees or more and 90 degrees or less.

[0395] As described above, the distance between adjacent pairs of the organic compound layers 103B, 103G, and 103R formed using photolithography can be narrowed to 8 μm or less, 5 μm or less, 3 μm or less, 2 μm or less, or 1 μm or less. Here, the distance can be defined, for example, as the distance between the opposing ends of adjacent pairs of the organic compound layers 103B, 103G, and 103R. By narrowing the distance between the island-shaped organic compound layers in this manner, a light-emitting device with high definition and a large aperture ratio can be provided. Furthermore, the distance between the first electrodes of adjacent light-emitting devices can also be narrowed, for example, to 10 μm or less, 8 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less. Note that the distance between the first electrodes of adjacent light-emitting devices is preferably 2 μm or more and 5 μm or less.

[0396] Next, as shown in FIG. 10A, the mask layers 159B, 159G, and 159R are removed.

[0397] Although the present embodiment will be described taking as an example a case where the mask layers 159B, 159G, and 159R are removed, it is not necessary to remove the mask layers 159B, 159G, and 159R. For example, if the mask layers 159B, 159G, and 159R contain the aforementioned material that has a light-blocking property against ultraviolet light, the organic compound layer can be protected from light irradiation (including illumination light) by proceeding to the next step without removing them.

[0398] The mask layer removal process can be performed using the same method as the mask film processing process. In particular, by using a wet etching method, damage to the organic compound layers 103B, 103G, and 103R during the mask layer removal process can be reduced compared to when a dry etching method is used.

[0399] The mask layer may also be removed by dissolving it in a solvent such as water or alcohol, such as ethyl alcohol, methyl alcohol, isopropyl alcohol (IPA), or glycerin.

[0400] After removing the mask layer, a drying treatment may be performed to remove water contained in the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, as well as water adsorbed on the surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. For example, heat treatment can be performed in an inert gas atmosphere or a reduced-pressure atmosphere. The heat treatment can be performed at a substrate temperature of 50° C. or higher and 200° C. or lower, preferably 60° C. or higher and 150° C. or lower, and more preferably 70° C. or higher and 120° C. or lower. A reduced-pressure atmosphere is preferable because it enables drying at a lower temperature.

[0401] Next, as shown in FIG. 10B, an inorganic insulating film 125f, which will later become the inorganic insulating layer 125, is formed to cover the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the sacrificial layer 158B, the sacrificial layer 158G, and the sacrificial layer 158R.

[0402] As will be described later, an insulating film that will later become the insulating layer 127 is formed in contact with the upper surface of the inorganic insulating film 125f. Therefore, it is preferable that the upper surface of the inorganic insulating film 125f has a high affinity with the material (e.g., a photosensitive resin composition containing an acrylic resin) used for the insulating film that will become the insulating layer 127. To improve this affinity, a surface treatment may be performed on the upper surface of the inorganic insulating film 125f. Specifically, it is preferable to hydrophobize (or increase the hydrophobicity of) the surface of the inorganic insulating film 125f. For example, it is preferable to perform the treatment using a silylating agent such as hexamethyldisilazane (HMDS). By hydrophobizing the upper surface of the inorganic insulating film 125f in this manner, the insulating film 127f can be formed with good adhesion.

[0403] Subsequently, as shown in FIG. 10C, an insulating film 127f, which will later become the insulating layer 127, is formed on the inorganic insulating film 125f.

[0404] The inorganic insulating film 125f and the insulating film 127f are preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. In particular, since the inorganic insulating film 125f is formed in contact with the side surfaces of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, it is preferably formed by a formation method that causes less damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R than the insulating film 127f.

[0405] The inorganic insulating film 125f and the insulating film 127f are formed at a temperature lower than the heat-resistant temperatures of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, respectively. By increasing the substrate temperature during film formation, the inorganic insulating film 125f can be formed as a film with a low impurity concentration and a high barrier property against at least one of water and oxygen, even if it is thin.

[0406] The substrate temperature when forming the inorganic insulating film 125f and the insulating film 127f is preferably 60°C or higher, 80°C or higher, 100°C or higher, or 120°C or higher, and 200°C or lower, 180°C or lower, 160°C or lower, 150°C or lower, or 140°C or lower, respectively.

[0407] As the inorganic insulating film 125f, it is preferable to form an insulating film having a thickness of 3 nm or more, 5 nm or more, or 10 nm or more, and 200 nm or less, 150 nm or less, 100 nm or less, or 50 nm or less within the above substrate temperature range.

[0408] The inorganic insulating film 125f is preferably formed by, for example, the ALD method. The ALD method is preferable because it can reduce film formation damage and form a film with high coverage. The inorganic insulating film 125f is preferably formed as an aluminum oxide film by, for example, the ALD method.

[0409] Alternatively, the inorganic insulating film 125f may be formed by sputtering, CVD, or PECVD, which have a faster film formation rate than ALD, thereby enabling highly reliable light-emitting devices to be manufactured with high productivity.

[0410] The insulating film 127f is preferably formed by the wet film formation method described above. The insulating film 127f is preferably formed by, for example, spin coating using a photosensitive material, more specifically, using a photosensitive resin composition containing an acrylic resin.

[0411] Note that the angle θ of the substrate with respect to the horizontal plane may be adjusted before applying the material that will become the insulating film 127f. Specifically, the angle θ of the substrate surface with respect to the horizontal direction may be maintained at greater than 135 degrees and less than 180 degrees, preferably at 170 degrees or greater and less than 180 degrees. Adjusting the angle θ can suppress uneven application of the material that will become the insulating film 127f. In this case, the angle θ of the substrate with respect to the horizontal plane may be adjusted after exposure. Specifically, by maintaining the substrate at an angle of 45 degrees or greater and less than 135 degrees, preferably at 55 degrees or greater and less than 80 degrees, or at 100 degrees or greater and less than 125 degrees, with respect to the horizontal direction, the volume occupied by the film formation chamber or film formation apparatus can be reduced, resulting in a smaller size and smaller footprint.

[0412] The insulating film 127f is preferably formed using, for example, a resin composition containing a polymer, an acid generator, and a solvent. The polymer is formed using one or more types of monomers and has a structure in which one or more types of structural units (also referred to as constituent units) are regularly or irregularly repeated. As the acid generator, one or both of a compound that generates an acid upon irradiation with light and a compound that generates an acid upon heating can be used. The resin composition may further contain one or more of a photosensitizer, a sensitizer, a catalyst, an adhesion aid, a surfactant, and an antioxidant.

[0413] Furthermore, heat treatment (also referred to as pre-baking) is preferably performed after the insulating film 127f is formed. The heat treatment is performed at a temperature lower than the heat resistance temperature of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. The substrate temperature during the heat treatment is preferably 50° C. or higher and 200° C. or lower, more preferably 60° C. or higher and 150° C. or lower, and even more preferably 70° C. or higher and 120° C. or lower. This allows the solvent contained in the insulating film 127f to be removed.

[0414] Next, exposure is performed to expose a portion of the insulating film 127f to visible light or ultraviolet light. If a positive-type photosensitive resin composition containing an acrylic resin is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will not be formed in a later process. The insulating layer 127 is formed in the region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and around the conductive layer 152C. Therefore, visible light or ultraviolet light is irradiated onto the conductive layers 152B, 152G, 152R, and 152C. If a negative-type photosensitive material is used for the insulating film 127f, visible light or ultraviolet light is irradiated onto the region where the insulating layer 127 will be formed.

[0415] The width of the insulating layer 127 to be formed later can be controlled by the exposed region of the insulating film 127f. In this embodiment mode, the insulating layer 127 is processed to have a portion overlapping with the top surface of the conductive layer 151.

[0416] Here, by providing a barrier insulating layer against oxygen (e.g., an aluminum oxide film) as one or both of the sacrificial layer 158 (sacrificial layer 158B, sacrificial layer 158G, and sacrificial layer 158R) and the inorganic insulating film 125f, it is possible to suppress diffusion of oxygen into the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R. When the organic compound layer is irradiated with light (visible light or ultraviolet light), the organic compound contained in the organic compound layer becomes excited, which may promote reaction with oxygen contained in the atmosphere. More specifically, when the organic compound layer is irradiated with light (visible light or ultraviolet light) in an oxygen-containing atmosphere, oxygen may bond to the organic compound contained in the organic compound layer. By providing the sacrificial layer 158 and the inorganic insulating film 125f on the island-shaped organic compound layer, it is possible to reduce bonding of oxygen in the atmosphere to the organic compound contained in the organic compound layer.

[0417] 11A, development is performed to remove the exposed regions of the insulating film 127f, thereby forming an insulating layer 127a. The insulating layer 127a is formed in a region sandwiched between any two of the conductive layers 152B, 152G, and 152R, and in a region surrounding the conductive layer 152C. When an acrylic resin is used for the insulating film 127f, an alkaline solution, such as TMAH, can be used as the developer.

[0418] 11B, an etching process is performed using the insulating layer 127a as a mask to remove a portion of the inorganic insulating film 125f and reduce the thickness of a portion of the sacrificial layers 158B, 158G, and 158R. As a result, the inorganic insulating layer 125 is formed below the insulating layer 127a. Note that, hereinafter, the etching process for processing the inorganic insulating film 125f using the insulating layer 127a as a mask may be referred to as a first etching process.

[0419] That is, in the first etching process, the sacrificial layers 158B, 158G, and 158R are not completely removed, and the etching process is stopped when the film thicknesses of the sacrificial layers 158B, 158G, and 158R are reduced. In this manner, by leaving the sacrificial layers 158B, 158G, and 158R on the organic compound layers 103B, 103G, and 103R, respectively, it is possible to prevent the organic compound layers 103B, 103G, and 103R from being damaged in subsequent processes.

[0420] The first etching treatment can be performed by dry etching or wet etching. Note that, when the inorganic insulating film 125f is formed using the same material as the sacrificial layers 158B, 158G, and 158R, the inorganic insulating film 125f can be processed and the exposed sacrificial layer 158 can be thinned in one go by the first etching treatment, which is preferable.

[0421] By performing etching using the insulating layer 127a, which has tapered side surfaces, as a mask, the side surfaces of the inorganic insulating layer 125 and the upper end portions of the side surfaces of the sacrificial layers 158B, 158G, and 158R can be tapered relatively easily.

[0422] For example, when the first etching process is performed by dry etching, a chlorine-based gas can be used. ２ , BCl ３ , SiCl ４ , and CCl ４ The chlorine-based gas may be added with oxygen gas, hydrogen gas, helium gas, argon gas, or the like, either alone or in combination of two or more gases. By using dry etching, thin regions of the sacrificial layers 158B, 158G, and 158R can be formed with good in-plane uniformity.

[0423] Furthermore, for example, the first etching process can be performed by wet etching, which can reduce damage to the organic compound layers 103B, 103G, and 103R compared to when dry etching is used.

[0424] For wet etching, it is preferable to use an acidic chemical solution, such as a chemical solution containing any one of phosphoric acid, hydrofluoric acid, nitric acid, acetic acid, oxalic acid, and sulfuric acid, or a mixed chemical solution of two or more acids (also called mixed acid).

[0425] Alternatively, an alkaline solution can be used for wet etching. For example, TMAH, which is an alkaline solution, can be used for wet etching of an aluminum oxide film. In this case, wet etching can be performed by a paddle method.

[0426] Next, heat treatment (also referred to as post-baking) is performed. By performing the heat treatment, the insulating layer 127a can be transformed into an insulating layer 127 having tapered side surfaces ( FIG. 11C ). The heat treatment is performed at a temperature lower than the upper temperature limit of the organic compound layer. The heat treatment can be performed at a substrate temperature of 50° C. to 200° C., preferably 60° C. to 150° C., more preferably 70° C. to 130° C. The heating atmosphere may be an air atmosphere or an inert gas atmosphere. The heating atmosphere may be an atmospheric pressure atmosphere or a reduced-pressure atmosphere. The substrate temperature in the heat treatment in this step is preferably higher than that in the heat treatment (pre-baking) performed after the formation of the insulating film 127f.

[0427] The heat treatment can improve the adhesion between the insulating layer 127 and the inorganic insulating layer 125 and also improve the corrosion resistance of the insulating layer 127. Furthermore, the insulating layer 127a is deformed, so that the end portion of the inorganic insulating layer 125 can be covered with the insulating layer 127.

[0428] By leaving the sacrificial layers 158B, 158G, and 158R in a thinner state without completely removing them in the first etching treatment, the organic compound layers 103B, 103G, and 103R can be prevented from being damaged and deteriorated in the heat treatment, thereby improving the reliability of the light-emitting device.

[0429] 12A , an etching process is performed using the insulating layer 127 as a mask to remove portions of the sacrificial layers 158B, 158G, and 158R. Note that at this time, portions of the inorganic insulating layer 125 may also be removed. By this etching process, openings are formed in the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, and 103R, and the conductive layer 152C are exposed through the openings. Note that hereinafter, the etching process that uses the insulating layer 127 as a mask to expose the organic compound layers 103B, 103G, and 103R may be referred to as a second etching process.

[0430] The second etching treatment is performed by wet etching. By using the wet etching method, damage to the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R can be reduced compared to when using the dry etching method. The wet etching can be performed using an acidic chemical solution or an alkaline solution, as in the first etching treatment.

[0431] Furthermore, after exposing portions of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R, a heat treatment may be further performed. This heat treatment can remove water contained in the organic compound layer and water adsorbed to the surface of the organic compound layer. This heat treatment may also change the shape of the insulating layer 127. Specifically, the insulating layer 127 may extend to cover at least one of the ends of the inorganic insulating layer 125, the ends of the sacrificial layers 158B, 158G, and 158R, and the top surfaces of the organic compound layers 103B, 103G, and 103R.

[0432] Note that Figure 12A shows an example in which a portion of the end of the sacrificial layer 158G (specifically, the tapered portion formed by the first etching process) is covered by the insulating layer 127, and the tapered portion formed by the second etching process is exposed (see Figure 5A).

[0433] The insulating layer 127 may also cover the entire end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may droop and cover the end of the sacrificial layer 158G. For example, the end of the insulating layer 127 may contact the top surface of at least one of the organic compound layer 103B, the organic compound layer 103G, and the organic compound layer 103R.

[0434] 12B , a common electrode 155 is formed on the organic compound layer 103B, the organic compound layer 103G, the organic compound layer 103R, the conductive layer 152C, and the insulating layer 127. The common electrode 155 can be formed by a method such as sputtering or vacuum evaporation. Alternatively, the common electrode 155 may be formed by stacking a film formed by evaporation and a film formed by sputtering.

[0435] 12C, a protective layer 131 is formed on the common electrode 155. The protective layer 131 can be formed by a method such as a vacuum deposition method, a sputtering method, a CVD method, or an ALD method.

[0436] Subsequently, the substrate 120 is attached over the protective layer 131 using the resin layer 122, whereby a light-emitting device can be manufactured. As described above, in the manufacturing method of a light-emitting device according to one embodiment of the present invention, the insulating layer 156 is provided so as to have a region overlapping with a side surface of the conductive layer 151, and the conductive layer 152 is formed so as to cover the conductive layer 151 and the insulating layer 156. This can increase the yield of light-emitting devices and suppress the occurrence of defects.

[0437] As described above, in the manufacturing method of the light-emitting device according to one embodiment of the present invention, the island-shaped organic compound layers 103B, 103G, and 103R are formed by forming films over the entire surface and then processing them, rather than by using a fine metal mask. This allows the island-shaped layers to be formed with uniform thicknesses. This allows a high-resolution light-emitting device or a light-emitting device with a high aperture ratio to be realized. Furthermore, even when the resolution or aperture ratio is high and the distance between subpixels is extremely short, the organic compound layers 103B, 103G, and 103R can be prevented from contacting each other in adjacent subpixels. Therefore, leakage current between subpixels can be suppressed. This prevents crosstalk and realizes a light-emitting device with extremely high contrast. Furthermore, even in a light-emitting device including tandem light-emitting devices fabricated by photolithography, a light-emitting device with excellent characteristics can be provided.

[0438] Embodiment 4 In this embodiment, a light-emitting device of one embodiment of the present invention will be described with reference to FIGS. 13A to 13G and 14A to 14I.

[0439] [Pixel Layout] In this embodiment, pixel layouts different from that shown in Fig. 5 will be mainly described. There are no particular limitations on the arrangement of sub-pixels, and various methods can be applied. Examples of the arrangement of sub-pixels include a stripe arrangement, an S-stripe arrangement, a matrix arrangement, a delta arrangement, a Bayer arrangement, and a pentile arrangement.

[0440] The top shape of the sub-pixels shown in the drawings in this embodiment mode corresponds to the top shape of the light-emitting region.

[0441] The top surface shape of the subpixel may be, for example, a triangle, a quadrangle (including a rectangle and a square), a polygon such as a pentagon, a polygon with rounded corners, an ellipse, or a circle.

[0442] Furthermore, the layout of the circuits constituting the sub-pixels is not limited to the range of the sub-pixels shown in the drawings, and may be arranged outside of the range.

[0443] An S-stripe arrangement is applied to the pixel 178 shown in Fig. 13A. The pixel 178 shown in Fig. 13A is composed of three subpixels: a subpixel 110R, a subpixel 110G, and a subpixel 110B.

[0444] 13B includes a subpixel 110R having a generally trapezoidal top surface shape with rounded corners, a subpixel 110G having a generally triangular top surface shape with rounded corners, and a subpixel 110B having a generally rectangular or hexagonal top surface shape with rounded corners. Furthermore, the subpixel 110R has a larger light-emitting area than the subpixel 110G. In this manner, the shape and size of each subpixel can be determined independently. For example, the more reliable the light-emitting device, the smaller the size of the subpixel can be.

[0445] The Pentile arrangement is applied to the pixels 124a and 124b shown in Fig. 13C. Fig. 13C shows an example in which the pixel 124a having the subpixel 110R and the subpixel 110G and the pixel 124b having the subpixel 110G and the subpixel 110B are arranged alternately.

[0446] 13D to 13F are arranged in a delta configuration. Pixel 124a has two subpixels (subpixel 110R and subpixel 110G) in the top row (first row) and one subpixel (subpixel 110B) in the bottom row (second row). Pixel 124b has one subpixel (subpixel 110B) in the top row (first row) and two subpixels (subpixel 110R and subpixel 110G) in the bottom row (second row).

[0447] Figure 13D is an example in which each subpixel has an approximately rectangular top surface shape with rounded corners, Figure 13E is an example in which each subpixel has a circular top surface shape, and Figure 13F is an example in which each subpixel has an approximately hexagonal top surface shape with rounded corners.

[0448] In Figure 13F, each subpixel is arranged inside a closely packed hexagonal region. Each subpixel is arranged so that it is surrounded by six other subpixels when focusing on one subpixel. Furthermore, subpixels that emit light of the same color are arranged so that they are not adjacent to each other. For example, when focusing on subpixel 110R, three subpixels 110G and three subpixels 110B are arranged alternately to surround it.

[0449] 13G shows an example in which subpixels of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two subpixels aligned in the row direction (for example, subpixels 110R and 110G, or subpixels 110G and 110B) are misaligned.

[0450] 13A to 13G, it is preferable that the subpixel 110R is the subpixel R that emits red light, the subpixel 110G is the subpixel G that emits green light, and the subpixel 110B is the subpixel B that emits blue light. Note that the configuration of the subpixels is not limited to this, and the colors that the subpixels emit and their order of arrangement can be determined appropriately. For example, the subpixel 110G may be the subpixel R that emits red light, and the subpixel 110R may be the subpixel G that emits green light.

[0451] In photolithography, the finer the pattern to be processed, the more significant the effect of light diffraction becomes. This impairs the fidelity of the photomask pattern when it is transferred by exposure, making it difficult to process the resist mask into the desired shape. Therefore, even if the photomask pattern is rectangular, a pattern with rounded corners is likely to be formed. As a result, the top surface shape of the subpixel may become a polygon with rounded corners, an ellipse, a circle, or the like.

[0452] Furthermore, in a method for manufacturing a light-emitting device according to one embodiment of the present invention, an organic compound layer is processed into an island shape using a resist mask. The resist film formed on the organic compound layer needs to be cured at a temperature lower than the heat resistance temperature of the organic compound layer. Therefore, depending on the heat resistance temperature of the material for the organic compound layer and the curing temperature of the resist material, the resist film may not be cured sufficiently. A resist film that is not cured sufficiently may have a shape that is different from the desired shape during processing. As a result, the top surface shape of the organic compound layer may be a polygon with rounded corners, an ellipse, a circle, or the like. For example, when a resist mask with a square top surface shape is formed, a resist mask with a circular top surface shape may be formed, resulting in a circular top surface shape of the organic compound layer.

[0453] In order to make the top surface of the organic compound layer have a desired shape, a technique for correcting a mask pattern in advance (OPC (Optical Proximity Correction) technique) may be used so that the design pattern and the transfer pattern coincide with each other. Specifically, in the OPC technique, a correction pattern is added to, for example, a corner of a figure on the mask pattern.

[0454] As shown in FIGS. 14A to 14I, a pixel can be configured to have four types of sub-pixels.

[0455] The pixel 178 shown in FIGS. 14A to 14C is arranged in a stripe pattern.

[0456] FIG. 14A shows an example in which each subpixel has a rectangular top surface shape, FIG. 14B shows an example in which each subpixel has a top surface shape that is a combination of two semicircles and a rectangle, and FIG. 14C shows an example in which each subpixel has an elliptical top surface shape.

[0457] The pixels 178 shown in FIGS. 14D to 14F are arranged in a matrix.

[0458] Figure 14D is an example in which each sub-pixel has a square top surface shape, Figure 14E is an example in which each sub-pixel has an approximately square top surface shape with rounded corners, and Figure 14F is an example in which each sub-pixel has a circular top surface shape.

[0459] 14G and 14H show an example in which one pixel 178 is configured in two rows and three columns.

[0460] 14G has three subpixels (subpixels 110R, 110G, and 110B) in the top row (first row) and one subpixel (subpixel 110W) in the bottom row (second row). In other words, pixel 178 has subpixel 110R in the left column (first column), subpixel 110G in the center column (second column), subpixel 110B in the right column (third column), and subpixels 110W across these three columns.

[0461] The pixel 178 shown in FIG. 14H has three subpixels (subpixels 110R, 110G, and 110B) in the top row (first row) and three subpixels 110W in the bottom row (second row). In other words, the pixel 178 has subpixels 110R and 110W in the left column (first column), subpixels 110G and 110W in the center column (second column), and subpixels 110B and 110W in the right column (third column). By aligning the subpixels in the top and bottom rows as shown in FIG. 14H , it becomes possible to efficiently remove dust that may occur during the manufacturing process. Therefore, a light-emitting device with high display quality can be provided.

[0462] In the pixel 178 shown in FIGS. 14G and 14H, the subpixels 110R, 110G, and 110B are laid out in a stripe arrangement, which can improve the display quality.

[0463] FIG. 14I shows an example in which one pixel 178 is configured in three rows and two columns.

[0464] 14I has subpixel 110R in the top row (first row), subpixel 110G in the middle row (second row), subpixel 110B across rows 1 and 2, and one subpixel (subpixel 110W) in the bottom row (third row). In other words, pixel 178 has subpixel 110R and subpixel 110G in the left column (first column), subpixel 110B in the right column (second column), and subpixel 110W across these two columns.

[0465] In the pixel 178 shown in FIG. 14I, the layout of the subpixels 110R, 110G, and 110B is a so-called S-stripe arrangement, which can improve the display quality.

[0466] 14A to 14I is composed of four subpixels: subpixel 110R, subpixel 110G, subpixel 110B, and subpixel 110W. For example, subpixel 110R can be a subpixel that emits red light, subpixel 110G can be a subpixel that emits green light, subpixel 110B can be a subpixel that emits blue light, and subpixel 110W can be a subpixel that emits white light. Note that at least one of subpixels 110R, subpixel 110G, subpixel 110B, and subpixel 110W may be a subpixel that emits cyan light, magenta light, yellow light, or near-infrared light.

[0467] As described above, in the light-emitting device of one embodiment of the present invention, various layouts can be applied to pixels each including a subpixel having a light-emitting device.

[0468] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0469] Embodiment 5 In this embodiment, a light-emitting device according to one embodiment of the present invention will be described.

[0470] The light emitting device of the present embodiment can be a high-definition light emitting device, and therefore can be used, for example, in the display units of wristwatch-type and bracelet-type information terminals (wearable devices), as well as in the display units of head-mounted wearable devices such as VR devices such as head-mounted displays (HMDs), and eyeglass-type AR devices.

[0471] The light-emitting device of this embodiment can be a high-resolution light-emitting device or a large-sized light-emitting device. Therefore, the light-emitting device of this embodiment can be used in the display portion of electronic devices having relatively large screens, such as television sets, desktop or notebook personal computers, computer monitors, digital signage, and large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound reproducing devices.

[0472] 15A shows a perspective view of a display module 280. The display module 280 has a light-emitting device 100A and an FPC 290. Note that the light-emitting device included in the display module 280 is not limited to the light-emitting device 100A, and may be either a light-emitting device 100B or a light-emitting device 100C, which will be described later.

[0473] The display module 280 has a substrate 291 and a substrate 292. The display module 280 has a display portion 281. The display portion 281 is a region that displays an image in the display module 280, and is a region where light from each pixel provided in a pixel portion 284 (described later) can be viewed.

[0474] 15B is a perspective view schematically illustrating the configuration on the substrate 291 side. A circuit portion 282, a pixel circuit portion 283 on the circuit portion 282, and a pixel portion 284 on the pixel circuit portion 283 are stacked on the substrate 291. A terminal portion 285 for connecting to the FPC 290 is provided in a portion of the substrate 291 that does not overlap with the pixel portion 284. The terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.

[0475] The pixel portion 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of Fig. 15B. The various configurations described in the previous embodiments can be applied to the pixel 284a. Fig. 15B shows an example in which the pixel 284a has the same configuration as the pixel 178 shown in Fig. 5.

[0476] The pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.

[0477] One pixel circuit 283a is a circuit that controls the driving of multiple elements included in one pixel 284a. One pixel circuit 283a can be configured to have three circuits that control the light emission of one light-emitting device. For example, the pixel circuit 283a can be configured to have at least one selection transistor, one current control transistor (drive transistor), and a capacitor for each light-emitting device. In this case, a gate signal is input to the gate of the selection transistor, and a video signal is input to the source or drain. This realizes an active matrix light-emitting device.

[0478] The circuit portion 282 includes a circuit for driving each pixel circuit 283 a of the pixel circuit portion 283. For example, the circuit portion 282 preferably includes one or both of a gate line driver circuit and a source line driver circuit. In addition, the circuit portion 282 may include at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like.

[0479] The FPC 290 functions as wiring for supplying a video signal, a power supply potential, or the like from the outside to the circuit portion 282. An IC may be mounted on the FPC 290.

[0480] The display module 280 can be configured such that one or both of the pixel circuit unit 283 and the circuit unit 282 are stacked below the pixel unit 284, thereby enabling the aperture ratio (effective display area ratio) of the display unit 281 to be extremely high. For example, the aperture ratio of the display unit 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, and more preferably 60% or more and 95% or less. Furthermore, the pixels 284a can be arranged at an extremely high density, enabling the resolution of the display unit 281 to be extremely high. For example, it is preferable that the pixels 284a be arranged in the display unit 281 at a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and even more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less.

[0481] Because such a display module 280 has extremely high resolution, it can be suitably used in VR devices such as HMDs or eyeglass-type AR devices. For example, even in a configuration in which the display unit of the display module 280 is viewed through lenses, the display module 280 has an extremely high-resolution display unit 281, so even if the display unit is enlarged with lenses, the pixels are not visible, allowing for a highly immersive display. Furthermore, the display module 280 is not limited to this, and can be suitably used in electronic devices with relatively small display units. For example, it can be suitably used in the display unit of a wearable electronic device such as a wristwatch.

[0482] Light-Emitting Device 100A The light-emitting device 100A shown in FIG. 16A includes a substrate 301, a light-emitting device 130R, a light-emitting device 130G, a light-emitting device 130B, a capacitor 240, and a transistor 310.

[0483] The substrate 301 corresponds to the substrate 291 in FIGS. 15A and 15B . The transistor 310 is a transistor having a channel formation region in the substrate 301. The substrate 301 can be, for example, a semiconductor substrate such as a single crystal silicon substrate. The transistor 310 includes a part of the substrate 301, a conductive layer 311, a low-resistance region 312, an insulating layer 313, and an insulating layer 314. The conductive layer 311 functions as a gate electrode. The insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer. The low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as a source or drain. The insulating layer 314 is provided to cover a side surface of the conductive layer 311.

[0484] An element isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .

[0485] In addition, an insulating layer 261 is provided to cover the transistor 310 , and a capacitor 240 is provided over the insulating layer 261 .

[0486] The capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 located therebetween. The conductive layer 241 functions as one electrode of the capacitor 240, the conductive layer 245 functions as the other electrode of the capacitor 240, and the insulating layer 243 functions as a dielectric of the capacitor 240.

[0487] The conductive layer 241 is provided over the insulating layer 261 and is buried in the insulating layer 254. The conductive layer 241 is electrically connected to one of the source and the drain of the transistor 310 by a plug 271 buried in the insulating layer 261. The insulating layer 243 is provided to cover the conductive layer 241. The conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 interposed therebetween.

[0488] An insulating layer 255 is provided covering the capacitor 240, an insulating layer 174 is provided on the insulating layer 255, and an insulating layer 175 is provided on the insulating layer 174. The light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B are provided on the insulating layer 175. FIG. 16A shows an example in which the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B have the stacked structure shown in FIG. 8A. An insulator is provided in the region between adjacent light-emitting devices. For example, in FIG. 16A, an inorganic insulating layer 125 and an insulating layer 127 on the inorganic insulating layer 125 are provided in this region.

[0489] Insulating layer 156R is provided to have a region overlapping with a side surface of conductive layer 151R of light-emitting device 130R, insulating layer 156G is provided to have a region overlapping with a side surface of conductive layer 151G of light-emitting device 130G, and insulating layer 156B is provided to have a region overlapping with a side surface of conductive layer 151B of light-emitting device 130B. Furthermore, conductive layer 152R is provided to cover conductive layer 151R and insulating layer 156R, conductive layer 152G is provided to cover conductive layer 151G and insulating layer 156G, and conductive layer 152B is provided to cover conductive layer 151B and insulating layer 156B. Furthermore, a sacrificial layer 158R is located on the organic compound layer 103R of the light-emitting device 130R, a sacrificial layer 158G is located on the organic compound layer 103G of the light-emitting device 130G, and a sacrificial layer 158B is located on the organic compound layer 103B of the light-emitting device 130B.

[0490] The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B are electrically connected to one of the source and drain of the transistor 310 via an insulating layer 243, an insulating layer 255, an insulating layer 174, a plug 256 embedded in the insulating layer 175, a conductive layer 241 embedded in the insulating layer 254, and a plug 271 embedded in the insulating layer 261. The height of the top surface of the insulating layer 175 and the height of the top surface of the plug 256 are the same or approximately the same. Various conductive materials can be used for the plug.

[0491] Furthermore, a protective layer 131 is provided on the light-emitting devices 130R, 130G, and 130B. A substrate 120 is bonded to the protective layer 131 via a resin layer 122. For details of the components from the light-emitting devices 130 to the substrate 120, refer to embodiment 2. The substrate 120 corresponds to the substrate 292 in FIG. 15A .

[0492] Fig. 16B is a modified example of the light-emitting device 100A shown in Fig. 16A. The light-emitting device shown in Fig. 16B has a colored layer 132R, a colored layer 132G, and a colored layer 132B, and the light-emitting device 130 has an area where it overlaps with one of the colored layers 132R, 132G, and 132B. In the light-emitting device shown in Fig. 16B, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light.

[0493] [Light Emitting Device 100B] FIG. 17 shows a perspective view of light emitting device 100B, and FIG. 18A shows a cross-sectional view of light emitting device 100B.

[0494] The light emitting device 100B has a configuration in which a substrate 352 and a substrate 351 are bonded together. In Fig. 17, the substrate 352 is clearly indicated by a dashed line.

[0495] The light-emitting device 100B has a pixel portion 177, a connection portion 140, a circuit 356, wiring 355, and the like. Fig. 17 shows an example in which an IC 354 and an FPC 353 are mounted on the light-emitting device 100B. Therefore, the configuration shown in Fig. 17 can also be called a display module having the light-emitting device 100B, an IC (integrated circuit), and an FPC. Here, a light-emitting device in which a connector such as an FPC is attached to a substrate, or a light-emitting device in which an IC is mounted on the substrate, is called a display module.

[0496] The connection portion 140 is provided outside the pixel portion 177. The connection portion 140 can be provided along one side or multiple sides of the pixel portion 177. The number of connection portions 140 may be single or multiple. FIG. 17 shows an example in which the connection portion 140 is provided so as to surround the four sides of the display portion. The connection portion 140 electrically connects the common electrode of the light-emitting device and the conductive layer, and can supply a potential to the common electrode.

[0497] The circuit 356 can be, for example, a scanning line driver circuit.

[0498] The wiring 355 has a function of supplying signals and power to the pixel portion 177 and the circuit 356. The signals and power are input to the wiring 355 from the outside via the FPC 353 or from the IC 354.

[0499] 17 shows an example in which an IC 354 is provided on a substrate 351 by a chip-on-glass (COG) method, a chip-on-film (COF) method, or the like. For example, an IC having a scanning line driver circuit or a signal line driver circuit can be used as the IC 354. The light-emitting device 100B and the display module may not necessarily include an IC. Alternatively, the IC may be mounted on an FPC by a COF method, for example.

[0500] Figure 18A shows an example of a cross section of the light-emitting device 100B, where a portion of the region including the FPC 353, a portion of the circuit 356, a portion of the pixel portion 177, a portion of the connection portion 140, and a portion of the region including the end portion are cut.

[0501] The light-emitting device 100B shown in Figure 18A has, between a substrate 351 and a substrate 352, a transistor 201, a transistor 205, a light-emitting device 130R that emits red light, a light-emitting device 130G that emits green light, and a light-emitting device 130B that emits blue light.

[0502] The light-emitting devices 130R, 130G, and 130B each have the same layer structure as shown in Fig. 8A, except that the configuration of the pixel electrodes is different. For details of the light-emitting devices, see Embodiments 1 and 2.

[0503] Light-emitting device 130R has conductive layer 224R, conductive layer 151R on conductive layer 224R, and conductive layer 152R on conductive layer 151R. Light-emitting device 130G has conductive layer 224G, conductive layer 151G on conductive layer 224G, and conductive layer 152G on conductive layer 151G. Light-emitting device 130B has conductive layer 224B, conductive layer 151B on conductive layer 224B, and conductive layer 152B on conductive layer 151B. Here, conductive layer 224R, conductive layer 151R, and conductive layer 152R may be collectively referred to as the pixel electrode of light-emitting device 130R, and conductive layer 151R and conductive layer 152R excluding conductive layer 224R may be referred to as the pixel electrode of light-emitting device 130R. Similarly, conductive layer 224G, conductive layer 151G, and conductive layer 152G may be collectively referred to as the pixel electrode of light-emitting device 130G, and conductive layer 151G and conductive layer 152G excluding conductive layer 224G may be collectively referred to as the pixel electrode of light-emitting device 130G. Furthermore, conductive layer 224B, conductive layer 151B, and conductive layer 152B may be collectively referred to as the pixel electrode of light-emitting device 130B, and conductive layer 151B and conductive layer 152B excluding conductive layer 224B may be collectively referred to as the pixel electrode of light-emitting device 130B.

[0504] The conductive layer 224R is connected to the conductive layer 222b of the transistor 205 through an opening provided in the insulating layer 214. An end of the conductive layer 151R is located outside an end of the conductive layer 224R. An insulating layer 156R is provided to have a region in contact with the side surface of the conductive layer 151R, and a conductive layer 152R is provided to cover the conductive layer 151R and the insulating layer 156R.

[0505] Conductive layer 224G, conductive layer 151G, conductive layer 152G, and insulating layer 156G in light-emitting device 130G, and conductive layer 224B, conductive layer 151B, conductive layer 152B, and insulating layer 156B in light-emitting device 130B are similar to conductive layer 224R, conductive layer 151R, conductive layer 152R, and insulating layer 156R in light-emitting device 130R, and therefore detailed description thereof will be omitted.

[0506] Recesses are formed in the conductive layers 224R, 224G, and 224B so as to cover the openings provided in the insulating layer 214. A layer 128 is buried in the recesses.

[0507] The layer 128 has a function of planarizing the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B. The conductive layer 151R, the conductive layer 151G, and the conductive layer 151B, which are electrically connected to the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B, are provided on the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B and the layer 128. Therefore, the regions overlapping with the recesses of the conductive layer 224R, the conductive layer 224G, and the conductive layer 224B can also be used as light-emitting regions, thereby increasing the aperture ratio of the pixel.

[0508] The layer 128 may be an insulating layer or a conductive layer. Various inorganic insulating materials, organic insulating materials, and conductive materials can be used as appropriate for the layer 128. In particular, the layer 128 is preferably formed using an insulating material, and more preferably using an organic insulating material. For example, the organic insulating material that can be used for the insulating layer 127 described above can be used for the layer 128.

[0509] A protective layer 131 is provided on the light-emitting device 130R, the light-emitting device 130G, and the light-emitting device 130B. The protective layer 131 and the substrate 352 are bonded via an adhesive layer 142. A light-shielding layer 157 is provided on the substrate 352. A solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light-emitting device 130. In FIG. 18A , the space between the substrate 352 and the substrate 351 is filled with the adhesive layer 142, and a solid sealing structure is applied. Alternatively, the space may be filled with an inert gas (such as nitrogen or argon), and a hollow sealing structure may be applied. In this case, the adhesive layer 142 may be provided so as not to overlap with the light-emitting device. Alternatively, the space may be filled with a resin different from the frame-shaped adhesive layer 142.

[0510] 18A shows an example in which connection portion 140 has conductive layer 224C obtained by processing the same conductive film as conductive layers 224R, 224G, and 224B, conductive layer 151C obtained by processing the same conductive film as conductive layers 151R, 151G, and 151B, and conductive layer 152C obtained by processing the same conductive film as conductive layers 152R, 152G, and 152B. Also, FIG. 18A shows an example in which insulating layer 156C is provided so as to have a region overlapping with a side surface of conductive layer 151C.

[0511] The light-emitting device 100B is a top-emission type. Light emitted by the light-emitting device is emitted toward the substrate 352. The substrate 352 is preferably made of a material that is highly transparent to visible light. The pixel electrode contains a material that reflects visible light, and the counter electrode (common electrode 155) contains a material that transmits visible light.

[0512] The transistor 201 and the transistor 205 are both formed over a substrate 351. These transistors can be manufactured using the same material and through the same process.

[0513] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided over the substrate 351 in this order. A part of the insulating layer 211 functions as a gate insulating layer for each transistor. A part of the insulating layer 213 functions as a gate insulating layer for each transistor. The insulating layer 215 is provided to cover the transistor. The insulating layer 214 is provided to cover the transistor and functions as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistors are not limited, and each may be a single layer or two or more layers.

[0514] It is preferable that at least one insulating layer covering the transistor is made of a material that is resistant to the diffusion of impurities such as water and hydrogen. This allows the insulating layer to function as a barrier layer. With this structure, it is possible to effectively prevent impurities from diffusing into the transistor from the outside, thereby improving the reliability of the light-emitting device.

[0515] It is preferable to use an inorganic insulating film for each of the insulating layers 211, 213, and 215. Examples of the inorganic insulating film that can be used include a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, and an aluminum nitride film. Alternatively, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, and a neodymium oxide film may also be used. Two or more of the above insulating films may be stacked.

[0516] An organic insulating layer is suitable for the insulating layer 214, which functions as a planarizing layer. Materials that can be used for the organic insulating layer include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins. Alternatively, the insulating layer 214 may have a laminated structure of an organic insulating layer and an inorganic insulating layer. The outermost layer of the insulating layer 214 preferably functions as an etching protection layer. This prevents recesses from being formed in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, conductive layer 152R, etc. Alternatively, recesses may be formed in the insulating layer 214 during processing of the conductive layer 224R, conductive layer 151R, conductive layer 152R, etc.

[0517] The transistor 201 and the transistor 205 each include a conductive layer 221 that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, conductive layers 222a and 222b that function as a source and a drain, a semiconductor layer 231, an insulating layer 213 that functions as a gate insulating layer, and a conductive layer 223 that functions as a gate. Here, the same hatching pattern is applied to multiple layers obtained by processing the same conductive film. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0518] The structure of the transistor included in the light-emitting device of this embodiment is not particularly limited. For example, a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used. Furthermore, either a top-gate transistor or a bottom-gate transistor structure may be used. Alternatively, gates may be provided above and below a semiconductor layer in which a channel is formed.

[0519] The transistor 201 and the transistor 205 have a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates. The two gates may be connected and the same signal may be supplied to drive the transistor. Alternatively, the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and a potential for driving to the other.

[0520] The crystallinity of a semiconductor material used for a transistor is not particularly limited, and any of an amorphous semiconductor and a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor having a crystalline region in part) may be used. The use of a crystalline semiconductor is preferable because it can suppress deterioration of transistor characteristics.

[0521] A semiconductor layer of the transistor preferably contains a metal oxide. That is, the light-emitting device of this embodiment preferably uses a transistor in which a channel formation region is formed using a metal oxide (hereinafter referred to as an OS transistor).

[0522] Examples of crystalline oxide semiconductors include c-axis-aligned crystalline (CAAC)-OS, nanocrystalline (nc)-OS, and the like.

[0523] Alternatively, a transistor using silicon for a channel formation region (Si transistor) may be used. Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, a transistor having low temperature polysilicon (LTPS) in a semiconductor layer (hereinafter also referred to as an LTPS transistor) may be used. An LTPS transistor has high field-effect mobility and favorable frequency characteristics.

[0524] By using Si transistors such as LTPS transistors, circuits that need to be driven at high frequencies (such as a source driver circuit) can be built on the same substrate as the display unit, which simplifies the external circuits mounted on the light-emitting device and reduces component and mounting costs.

[0525] An OS transistor has significantly higher field-effect mobility than a transistor using amorphous silicon. Furthermore, an OS transistor has significantly lower source-drain leakage current in an off state (hereinafter also referred to as off-state current), and can retain charge accumulated in a capacitor connected in series with the transistor for a long period of time. Furthermore, the use of an OS transistor can reduce the power consumption of a light-emitting device.

[0526] Furthermore, to increase the light emission luminance of a light-emitting device included in a pixel circuit, it is necessary to increase the amount of current flowing through the light-emitting device. To achieve this, it is necessary to increase the source-drain voltage of a driving transistor included in the pixel circuit. Since an OS transistor has a higher source-drain withstand voltage than a Si transistor, a high voltage can be applied between the source and drain of the OS transistor. Therefore, by using an OS transistor as the driving transistor included in a pixel circuit, it is possible to increase the amount of current flowing through the light-emitting device and increase the light emission luminance of the light-emitting device.

[0527] Furthermore, when a transistor operates in the saturation region, an OS transistor can reduce the change in source-drain current with respect to a change in gate-source voltage compared to a Si transistor. Therefore, by using an OS transistor as a driving transistor included in a pixel circuit, the current flowing between the source and drain can be precisely controlled by changing the gate-source voltage, thereby controlling the amount of current flowing through the light-emitting device. This allows for a greater number of gray levels to be displayed in the pixel circuit.

[0528] Furthermore, in terms of the saturation characteristics of the current that flows when a transistor operates in a saturation region, an OS transistor can pass a more stable current (saturation current) than a Si transistor, even when the source-drain voltage gradually increases. Therefore, by using an OS transistor as a driving transistor, a stable current can be passed through a light-emitting device, even when the current-voltage characteristics of the light-emitting device vary. In other words, when an OS transistor operates in a saturation region, the source-drain current of the OS transistor remains almost unchanged even when the source-drain voltage increases, thereby stabilizing the light-emitting luminance of the light-emitting device.

[0529] As described above, by using an OS transistor for a driving transistor included in a pixel circuit, it is possible to achieve "suppression of black floating," "increase in light emission luminance," "multiple gradations," "suppression of variations in light-emitting devices," and the like.

[0530] The semiconductor layer preferably contains, for example, indium, M (wherein M is one or more elements selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium), and zinc. In particular, M is preferably one or more elements selected from aluminum, gallium, yttrium, and tin.

[0531] In particular, it is preferable to use an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) as the semiconductor layer. Alternatively, it is preferable to use an oxide containing indium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium, gallium, tin, and zinc. Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), and zinc (Zn) (also referred to as IAZO). Alternatively, it is preferable to use an oxide containing indium (In), aluminum (Al), gallium (Ga), and zinc (Zn) (also referred to as IAGZO).

[0532] When the semiconductor layer is an In-M-Zn oxide, the atomic ratio of In in the In-M-Zn oxide is preferably equal to or greater than the atomic ratio of M. Examples of atomic ratios of metal elements in such In-M-Zn oxides include a composition in which In:M:Zn = 1:1:1 or thereabouts, a composition in which In:M:Zn = 1:1:1.2 or thereabouts, a composition in which In:M:Zn = 2:1:3 or thereabouts, a composition in which In:M:Zn = 3:1:2 or thereabouts, a composition in which In:M:Zn = 4:2:3 or thereabouts, a composition in which In:M:Zn = 4:2:4.1 or thereabouts, a composition in which In:M:Zn = 5:1:3 or thereabouts, a composition in which In:M:Zn = 5:1:6 or thereabouts, a composition in which In:M:Zn = 5:1:7 or thereabouts, a composition in which In:M:Zn = 5:1:8 or thereabouts, a composition in which In:M:Zn = 6:1:6 or thereabouts, and a composition in which In:M:Zn = 5:2:5 or thereabouts. The term "nearby composition" includes a range of ±30% of the desired atomic ratio.

[0533] For example, when describing a composition having an atomic ratio of In:Ga:Zn = 4:2:3 or thereabout, this includes a case where, when In is taken as 4, Ga is 1 to 3 and Zn is 2 to 4. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 5:1:6 or thereabout, this includes a case where, when In is taken as 5, Ga is more than 0.1 and 2 or less and Zn is 5 to 7 or less. Furthermore, when describing a composition having an atomic ratio of In:Ga:Zn = 1:1:1 or thereabout, this includes a case where, when In is taken as 1, Ga is more than 0.1 and 2 or less and Zn is more than 0.1 and 2 or less.

[0534] The transistors included in the circuit 356 and the transistors included in the pixel portion 177 may have the same structure or different structures. The transistors included in the circuit 356 may all have the same structure or may have two or more types. Similarly, the transistors included in the pixel portion 177 may all have the same structure or may have two or more types.

[0535] All the transistors included in the pixel portion 177 may be OS transistors, all the transistors included in the pixel portion 177 may be Si transistors, or some of the transistors included in the pixel portion 177 may be OS transistors and the rest may be Si transistors.

[0536] For example, by using both an LTPS transistor and an OS transistor in the pixel portion 177, a light-emitting device with low power consumption and high driving capability can be realized. A structure in which an LTPS transistor and an OS transistor are combined is sometimes referred to as LTPO. Note that, for example, it is preferable to use an OS transistor as a transistor that functions as a switch for controlling the conduction / non-conduction of a wiring, and to use an LTPS transistor as a transistor for controlling current.

[0537] For example, one of the transistors included in the pixel portion 177 functions as a transistor for controlling a current flowing through a light-emitting device and can be called a driving transistor. One of the source and drain of the driving transistor is electrically connected to a pixel electrode of the light-emitting device. It is preferable to use an LTPS transistor as the driving transistor. This allows the current flowing through the light-emitting device in the pixel circuit to be increased.

[0538] On the other hand, another transistor included in the pixel portion 177 functions as a switch for controlling pixel selection / non-selection and can also be called a selection transistor. The gate of the selection transistor is electrically connected to a gate line, and one of the source and drain is electrically connected to a source line (signal line). It is preferable to use an OS transistor as the selection transistor. This allows the gradation of a pixel to be maintained even when the frame frequency is significantly reduced (for example, 1 fps or less), thereby reducing power consumption by stopping the driver when displaying a still image.

[0539] As described above, the light-emitting device of one embodiment of the present invention can have a high aperture ratio, high definition, high display quality, and low power consumption.

[0540] Note that a light-emitting device according to one embodiment of the present invention includes an OS transistor and a light-emitting device with an MML (metal maskless) structure. This structure can significantly reduce leakage current that may flow through the transistor and leakage current that may flow between adjacent light-emitting devices (also referred to as lateral leakage current). Furthermore, with this structure, when an image is displayed on the light-emitting device, a viewer can observe one or more of image clarity, image sharpness, high saturation, and a high contrast ratio. Note that a structure in which leakage current that may flow through the transistor and lateral leakage current between light-emitting devices are extremely low can minimize light leakage during black display (so-called floating black).

[0541] In particular, among light-emitting devices with an MML structure, by applying the SBS structure described above, the layers provided between the light-emitting devices (for example, organic layers used in common between the light-emitting devices, also called common layers) are configured to be separated, so that side leakage can be eliminated or made extremely small.

[0542] 18B and 18C show other examples of transistor configurations.

[0543] The transistor 209 and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer 231 including a channel formation region 231i and a pair of low-resistance regions 231n, a conductive layer 222a connected to one of the pair of low-resistance regions 231n, a conductive layer 222b connected to the other of the pair of low-resistance regions 231n, an insulating layer 225 functioning as a gate insulating layer, a conductive layer 223 functioning as a gate, and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0544] 18B shows an example in which the insulating layer 225 covers the top surface and side surfaces of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively. One of the conductive layer 222a and the conductive layer 222b functions as a source, and the other functions as a drain.

[0545] 18C , the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low-resistance region 231n. For example, the insulating layer 225 is processed using the conductive layer 223 as a mask, thereby manufacturing the structure shown in FIG. 18C . In FIG. 18C , the insulating layer 215 is provided to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low-resistance region 231n through openings in the insulating layer 215.

[0546] A connection portion 204 is provided in a region of the substrate 351 where the substrate 352 does not overlap. In the connection portion 204, a wiring 355 is electrically connected to the FPC 353 via a conductive layer 166 and a connection layer 242. The conductive layer 166 has an example of a stacked structure including a conductive film obtained by processing the same conductive film as the conductive layers 224R, 224G, and 224B, a conductive film obtained by processing the same conductive film as the conductive layers 151R, 151G, and 151B, and a conductive film obtained by processing the same conductive film as the conductive layers 152R, 152G, and 152B. The conductive layer 166 is exposed on the top surface of the connection portion 204. This allows the connection portion 204 and the FPC 353 to be electrically connected via the connection layer 242.

[0547] It is preferable to provide a light-shielding layer 157 on the surface of the substrate 352 facing the substrate 351. The light-shielding layer 157 can be provided between adjacent light-emitting devices, on the connection section 140, on the circuit 356, etc. In addition, various optical members can be arranged on the outside of the substrate 352.

[0548] The substrate 351 and the substrate 352 can be made of the same material as can be used for the substrate 120 .

[0549] The adhesive layer 142 can be made of a material that can be used for the resin layer 122 .

[0550] The connection layer 242 may be an anisotropic conductive film (ACF), an anisotropic conductive paste (ACP), or the like.

[0551] [Light Emitting Device 100H] The light emitting device 100H shown in FIG. 19 differs from the light emitting device 100A shown in FIG. 18 mainly in that it is a bottom emission type light emitting device.

[0552] Light emitted from the light-emitting device is emitted toward the substrate 351. A material that is highly transparent to visible light is preferably used for the substrate 351. On the other hand, the light-transmitting property of the material used for the substrate 352 does not matter.

[0553] A light-shielding layer 157 is preferably formed between the substrate 351 and the transistor 201 and between the substrate 351 and the transistor 205. Figure 19 shows an example in which the light-shielding layer 157 is provided over the substrate 351, the insulating layer 153 is provided over the light-shielding layer 157, and the transistors 201, 205, and the like are provided over the insulating layer 153.

[0554] Light emitting device 130R includes conductive layer 112R, conductive layer 126R on conductive layer 112R, and conductive layer 129R on conductive layer 126R.

[0555] Light emitting device 130B includes conductive layer 112B, conductive layer 126B on conductive layer 112B, and conductive layer 129B on conductive layer 126B.

[0556] The conductive layers 112R, 112B, 126R, 126B, 129R, and 129B are made of a material that is highly transparent to visible light. The common electrode 155 is preferably made of a material that reflects visible light.

[0557] Although the light emitting device 130G is not shown in FIG. 19, the light emitting device 130G is also provided.

[0558] Although FIG. 19 and other figures show an example in which the top surface of the layer 128 has a flat portion, the shape of the layer 128 is not particularly limited.

[0559] [Light Emitting Device 100C] The light emitting device 100C shown in FIG. 20A is a modification of the light emitting device 100B shown in FIG. 18A, and differs from the light emitting device 100B mainly in that it has colored layers 132R, 132G, and 132B.

[0560] In the light-emitting device 100C, the light-emitting device 130 has an area overlapping one of the colored layers 132R, 132G, and 132B. The colored layers 132R, 132G, and 132B can be provided on the surface of the substrate 352 facing the substrate 351. An end of the colored layer 132R, an end of the colored layer 132G, and an end of the colored layer 132B can overlap the light-shielding layer 157.

[0561] In the light-emitting device 100C, the light-emitting device 130 can emit, for example, white light. Furthermore, for example, the colored layer 132R can transmit red light, the colored layer 132G can transmit green light, and the colored layer 132B can transmit blue light. The light-emitting device 100C may be configured such that the colored layers 132R, 132G, and 132B are provided between the protective layer 131 and the adhesive layer 142.

[0562] 18A and 20A show examples in which the top surface of the layer 128 has a flat portion, but there are no particular limitations on the shape of the layer 128. Figures 20B to 20D show modified examples of the layer 128.

[0563] As shown in FIGS. 20B and 20D, the upper surface of layer 128 can be configured to have a recessed shape in the center and its vicinity in cross section, that is, a shape having a concave curved surface.

[0564] As shown in FIG. 20C, the upper surface of layer 128 may have a shape in which the center and its vicinity bulge in cross section, that is, a shape having a convex curve.

[0565] The upper surface of layer 128 may have one or both of a convex curved surface and a concave curved surface. The number of convex curved surfaces and the number of concave curved surfaces that the upper surface of layer 128 has are not limited, and may be one or more.

[0566] Furthermore, the height of the upper surface of layer 128 and the height of the upper surface of conductive layer 224R may be the same or approximately the same, or may be different from each other. For example, the height of the upper surface of layer 128 may be lower or higher than the height of the upper surface of conductive layer 224R.

[0567] 20B can also be considered an example in which layer 128 is contained within the recess of conductive layer 224R. On the other hand, as shown in Fig. 20D, layer 128 may be present outside the recess of conductive layer 224R, that is, the width of the top surface of layer 128 may be wider than the recess.

[0568] This embodiment mode can be combined with other embodiment modes or examples as appropriate. In addition, in this specification, when a plurality of configuration examples are shown in one embodiment mode, the configuration examples can be combined as appropriate.

[0569] Embodiment 6 In this embodiment, an electronic device according to one embodiment of the present invention will be described.

[0570] The electronic devices of this embodiment include the light-emitting device of one embodiment of the present invention in their display portions. The light-emitting device of one embodiment of the present invention is highly reliable and can easily achieve high definition and high resolution. Therefore, the light-emitting device can be used in the display portions of various electronic devices.

[0571] Examples of electronic devices include electronic devices with relatively large screens such as television sets, desktop or notebook personal computers, computer monitors, digital signage, large game machines such as pachinko machines, as well as digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and sound playback devices.

[0572] In particular, the light-emitting device of one embodiment of the present invention can have high resolution and thus can be suitably used in electronic devices having a relatively small display portion. Examples of such electronic devices include wristwatch-type and bracelet-type information terminals (wearable devices), and head-mounted wearable devices such as VR devices such as head-mounted displays, AR glasses-type devices, and MR devices.

[0573] The light-emitting device of one embodiment of the present invention preferably has extremely high resolution, such as HD (1280 × 720 pixels), FHD (1920 × 1080 pixels), WQHD (2560 × 1440 pixels), WQXGA (2560 × 1600 pixels), 4K (3840 × 2160 pixels), or 8K (7680 × 4320 pixels). A resolution of 4K, 8K, or higher is particularly preferable. Furthermore, the pixel density (resolution) of the light-emitting device of one embodiment of the present invention is preferably 100 ppi or higher, more preferably 300 ppi or higher, more preferably 500 ppi or higher, more preferably 1000 ppi or higher, more preferably 2000 ppi or higher, more preferably 3000 ppi or higher, more preferably 5000 ppi or higher, and even more preferably 7000 ppi or higher. By using a light-emitting device having either or both of high resolution and high definition, it is possible to further enhance the sense of realism and depth. Furthermore, the screen ratio (aspect ratio) of the light-emitting device according to one embodiment of the present invention is not particularly limited. For example, the light-emitting device can accommodate various screen ratios such as 1:1 (square), 4:3, 16:9, and 16:10.

[0574] The electronic device of this embodiment may have a sensor (including a function to measure force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, sound, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor, or infrared rays).

[0575] The electronic device of the present embodiment can have various functions, such as a function to display various information (still images, videos, text images, etc.) on a display unit, a touch panel function, a function to display a calendar, date, time, etc., a function to execute various software (programs), a wireless communication function, and a function to read out programs or data recorded on a recording medium.

[0576] 21A to 21D , examples of wearable devices that can be worn on the head will be described. These wearable devices have at least one of the following functions: a function to display AR content, a function to display VR content, a function to display SR content, and a function to display MR content. By having an electronic device with the function to display at least one of AR, VR, SR, and MR content, it is possible to enhance the sense of immersion felt by the user.

[0577] The electronic device 700A shown in FIG. 21A and the electronic device 700B shown in FIG. 21B each have a pair of display panels 751, a pair of housings 721, a communication unit (not shown), a pair of mounting units 723, a control unit (not shown), an imaging unit (not shown), a pair of optical members 753, a frame 757, and a pair of nose pads 758.

[0578] The light-emitting device of one embodiment of the present invention can be applied to the display panel 751. Therefore, the electronic device can be highly reliable.

[0579] The electronic device 700A and the electronic device 700B can each project an image displayed on the display panel 751 onto a display area 756 of the optical member 753. Because the optical member 753 is translucent, the user can see the image displayed in the display area superimposed on a transmitted image visually recognized through the optical member 753. Therefore, the electronic device 700A and the electronic device 700B are each electronic devices capable of AR display.

[0580] The electronic device 700A and the electronic device 700B may be provided with a camera capable of capturing an image in front of them as an imaging unit. Furthermore, the electronic device 700A and the electronic device 700B may each be provided with an acceleration sensor such as a gyro sensor, thereby detecting the orientation of the user's head and displaying an image corresponding to that orientation in the display area 756.

[0581] The communication unit has a wireless communication device, and can supply, for example, a video signal via the wireless communication device. Note that instead of or in addition to the wireless communication device, a connector to which a cable through which a video signal and a power supply potential can be connected may be provided.

[0582] Furthermore, the electronic device 700A and the electronic device 700B are provided with batteries, which can be charged wirelessly and / or wired.

[0583] The housing 721 may be provided with a touch sensor module. The touch sensor module has a function of detecting a touch on the outer surface of the housing 721. The touch sensor module detects a tap operation, a slide operation, or the like by the user and can perform various processes. For example, a tap operation can perform a process such as pausing or resuming a video, and a slide operation can perform a process such as fast-forwarding or fast-rewinding. Furthermore, providing a touch sensor module on each of the two housings 721 can expand the range of operations.

[0584] Various touch sensors can be used as the touch sensor module. For example, various types of touch sensors can be used, such as a capacitance type, a resistive film type, an infrared type, an electromagnetic induction type, a surface acoustic wave type, or an optical type. In particular, it is preferable to use a capacitance type or an optical type sensor in the touch sensor module.

[0585] When an optical touch sensor is used, a photoelectric conversion device (also called a photoelectric conversion element) can be used as the light receiving element. The active layer of the photoelectric conversion device can be made of either or both of an inorganic semiconductor and an organic semiconductor.

[0586] The electronic device 800A shown in Figure 21C and the electronic device 800B shown in Figure 21D each have a pair of display units 820, a housing 821, a communication unit 822, a pair of mounting units 823, a control unit 824, a pair of imaging units 825, and a pair of lenses 832.

[0587] The light-emitting device of one embodiment of the present invention can be applied to the display portion 820. Therefore, the electronic device can have high reliability.

[0588] The display unit 820 is provided inside the housing 821 at a position that can be viewed through the lens 832. In addition, by displaying different images on the pair of display units 820, it is possible to perform three-dimensional display using parallax.

[0589] The electronic device 800A and the electronic device 800B can be said to be electronic devices for VR. A user wearing the electronic device 800A or the electronic device 800B can view an image displayed on the display unit 820 through the lens 832.

[0590] It is preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the left and right positions of lens 832 and display unit 820 so that they are optimally positioned according to the position of the user's eyes. It is also preferable that electronic device 800A and electronic device 800B each have a mechanism that can adjust the focus by changing the distance between lens 832 and display unit 820.

[0591] The mounting unit 823 allows the user to mount the electronic device 800A or the electronic device 800B on the head. Note that, for example, in Fig. 21C, the mounting unit 823 is shaped like the temples of glasses, but is not limited to this. The mounting unit 823 may be shaped like a helmet or a band, for example, as long as it can be worn by the user.

[0592] The imaging unit 825 has a function of acquiring external information. Data acquired by the imaging unit 825 can be output to the display unit 820. An image sensor can be used for the imaging unit 825. Furthermore, multiple cameras may be provided to support multiple angles of view, such as telephoto and wide-angle.

[0593] Although an example including the imaging unit 825 is shown here, a distance measuring sensor (hereinafter also referred to as a detection unit) capable of measuring the distance to an object may be provided. That is, the imaging unit 825 is one aspect of the detection unit. As the detection unit, for example, an image sensor or a range image sensor such as a LIDAR (Light Detection and Ranging) can be used. By using an image obtained by the camera and an image obtained by the range image sensor, more information can be obtained, enabling more accurate gesture operations.

[0594] The electronic device 800A may have a vibration mechanism that functions as a bone conduction earphone. For example, a configuration having such a vibration mechanism can be applied to one or more of the display unit 820, the housing 821, and the wearing unit 823. This allows a user to enjoy video and audio simply by wearing the electronic device 800A, without the need for separate audio equipment such as headphones, earphones, or speakers.

[0595] The electronic device 800A and the electronic device 800B may each have an input terminal to which a cable can be connected for supplying a video signal from a video output device or the like and power for charging a battery provided in the electronic device.

[0596] The electronic device of one embodiment of the present invention may have a function of wireless communication with an earphone 750. The earphone 750 includes a communication unit (not shown) and has a wireless communication function. The earphone 750 can receive information (e.g., audio data) from the electronic device through the wireless communication function. For example, the electronic device 700A shown in FIG. 21A has a function of transmitting information to the earphone 750 through the wireless communication function. Furthermore, for example, the electronic device 800A shown in FIG. 21C has a function of transmitting information to the earphone 750 through the wireless communication function.

[0597] The electronic device may also have an earphone unit. Electronic device 700B shown in Fig. 21B has earphone unit 727. For example, earphone unit 727 and the control unit may be configured to be connected to each other by wire. Part of the wiring connecting earphone unit 727 and the control unit may be disposed inside housing 721 or attachment unit 723.

[0598] Similarly, electronic device 800B shown in Fig. 21D has earphone unit 827. For example, earphone unit 827 and control unit 824 can be configured to be connected to each other by wire. Part of the wiring connecting ea...

Claims

The system includes a first cluster to a seventh cluster and a first load lock chamber to a sixth load lock chamber, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the fourth cluster via the third load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the seventh cluster via the sixth load lock chamber; the first cluster, the third cluster, the fifth cluster, and the seventh cluster are controlled to a reduced pressure; the second cluster, the fourth cluster, and the sixth cluster are controlled to be in an inert gas atmosphere; Each of the first cluster to the seventh cluster has a transport device, the first cluster, the third cluster, the fifth cluster, and the seventh cluster each have a plurality of film forming apparatuses for forming an organic film and a film forming apparatus for forming an inorganic film; the third cluster, the fifth cluster, and the seventh cluster each have an etching device; the second cluster, the fourth cluster, and the sixth cluster each have a plurality of devices for performing a lithography process, and each have a function of adjusting an angle with respect to a horizontal plane of a substrate; The system for manufacturing a light-emitting device, wherein the deposition step is performed while the substrate is at an angle of more than 90 degrees and not more than 135 degrees with respect to the horizontal direction. 　 The system includes a first cluster to a seventh cluster and a first load lock chamber to a sixth load lock chamber, the first cluster is connected to the second cluster via the first load lock chamber; the second cluster is connected to the third cluster via the second load lock chamber; the third cluster is connected to the fourth cluster via the third load lock chamber; the fourth cluster is connected to the fifth cluster via the fourth load lock chamber; the fifth cluster is connected to the sixth cluster via the fifth load lock chamber; the sixth cluster is connected to the seventh cluster via the sixth load lock chamber; the first cluster, the third cluster, the fifth cluster, and the seventh cluster are controlled to a reduced pressure; the second cluster, the fourth cluster, and the sixth cluster are controlled to be in an inert gas atmosphere; Each of the first cluster to the seventh cluster has a transport device, the first cluster, the third cluster, the fifth cluster, and the seventh cluster each have a plurality of film forming apparatuses for forming an organic film and a film forming apparatus for forming an inorganic film; the third cluster, the fifth cluster, and the seventh cluster each have an etching device; the second cluster, the fourth cluster, and the sixth cluster each have a plurality of devices for performing a lithography process, and each have a function of adjusting an angle with respect to a horizontal plane of a substrate; The deposition process is performed with the substrate at an angle greater than 90 degrees and less than or equal to 135 degrees relative to the horizontal, and the lithography process is performed with the substrate at an angle greater than 135 degrees and less than or equal to 180 degrees relative to the horizontal. 　 In claim 1 or 2, The system for manufacturing a light-emitting device, wherein the plurality of film-forming apparatuses for forming the organic films are vapor deposition apparatuses, and a vapor deposition source is disposed parallel to a substrate. 　 In claim 1 or 2, The system for manufacturing a light-emitting device includes a plurality of deposition apparatuses for depositing the organic films, each of which is an evaporation apparatus having a first evaporation source containing a first organic compound and a second evaporation source containing a second organic compound, the first evaporation source and the second evaporation source being disposed parallel to a substrate. 　 In claim 1 or 2, The film forming apparatus for forming the inorganic film in the light-emitting device manufacturing system is an ALD apparatus. 　 In claim 1 or 2, A light-emitting device manufacturing system having a coating apparatus, an exposure apparatus, a developing apparatus, and a baking apparatus as a plurality of apparatuses for performing the lithography process. 　 In claim 1 or 2, The system for manufacturing a light-emitting device, wherein the deposition step is performed while the substrate is at an angle of 100 degrees or more and 135 degrees or less with respect to the horizontal direction. In claim 2, A light-emitting device manufacturing system in which the lithography process is performed on a substrate in a direction substantially parallel to the horizontal direction.

Images