Joining system and joining method

Abstract

A joining system (1) according to the present disclosure comprises a first transport device (61), a surface modification device (33), a load lock chamber (31), a transport chamber (32), a substrate processing device (34), and a joining device (41). The first transport device transports a first substrate (W1) and a second substrate (W2). The surface modification device (33) modifies the surface of the first substrate (W1) and the second substrate (W2). The load lock chamber (31) switches the atmosphere therein between an atmospheric-pressure atmosphere and a reduced-pressure atmosphere. The transport chamber (32) is provided with a second transport device (32a) that transports the first substrate (W1) and the second substrate (W2) between the load lock chamber (31) and the surface modification device (33). The surface modification device (33) is provided with a first gas supply unit (122) and a first switching unit (126). The first gas supply unit (122) can supply a plurality of types of gas to the surface modification device (33). The first switching unit (126) switches the type of gas supplied to the surface modification device (33). The transfer chamber (32) is provided with a second gas supply unit (130) and a second switching unit (136). The second gas supply unit (130) can supply a plurality of types of gas to the transport chamber (32). The second switching unit (136) switches the type of gas supplied to the transport chamber (32).

Description

Joining system and joining method

[0001] The present disclosure relates to bonding systems and methods.

[0002] In order to meet the demand for high integration of semiconductor devices, it has been proposed to use a three-dimensional integration technology for stacking semiconductor devices in three dimensions. As a system using this three-dimensional integration technology, for example, a bonding system for bonding substrates such as semiconductor wafers (hereinafter referred to as "wafers") to each other is known (see, for example, Patent Document 1).

[0003] JP 2018-010921 A

[0004] The present disclosure provides a technique for suppressing mixing of multiple types of gases inside a surface modification device.

[0005] A bonding system according to one aspect of the present disclosure includes a first transfer device, a surface modification device, a load lock chamber, a transfer chamber, a substrate processing device, and a bonding device. The first transfer device transfers a first substrate and a second substrate in an atmospheric pressure atmosphere. The surface modification device modifies the surfaces of the first substrate and the second substrate to be bonded in a reduced pressure atmosphere. The load lock chamber transfers the first substrate and the second substrate between the first transfer device and the surface modification device, and the atmosphere within the load lock chamber can be switched between atmospheric and reduced pressure. The transfer chamber is disposed adjacent to the load lock chamber, and includes a second transfer device that transfers the first substrate and the second substrate between the load lock chamber and the surface modification device in a reduced pressure atmosphere. The substrate processing device processes the first substrate and the second substrate modified by the surface modification device. The bonding device bonds the first substrate and the second substrate processed by the substrate processing device. The surface modification device includes a first gas supply unit and a first switching unit. The first gas supply unit is configured to be able to supply multiple types of gases into the interior of the surface modification device. The first switching unit switches the type of gas supplied into the interior of the surface modification device. The transfer chamber includes a second gas supply unit and a second switching unit. The second gas supply unit is configured to be able to supply multiple types of gases into the interior of the transfer chamber. The second switching unit switches the type of gas supplied into the interior of the transfer chamber.

[0006] According to the present disclosure, it is possible to prevent a plurality of types of gases from mixing inside the surface modification device.

[0007] FIG. 1 is a schematic plan view showing the configuration of a bonding system according to a first embodiment. FIG. 2 is a schematic side view showing the configuration of a bonding system according to the first embodiment. FIG. 3 is a schematic side view of a first substrate and a second substrate. FIG. 4 is a schematic cross-sectional view showing the configuration of a surface modification apparatus. FIG. 5 is a schematic plan view showing the configurations of a load lock chamber, a transfer chamber, and a surface modification apparatus according to the first embodiment. FIG. 6 is a flowchart showing an example of a transfer process of an upper wafer performed by the bonding system according to the first embodiment. FIG. 7 is a schematic plan view showing the configurations of a load lock chamber, a transfer chamber, and a surface modification apparatus according to a second embodiment. FIG. 8 is a flowchart showing an example of a transfer process of an upper wafer performed by the bonding system according to the second embodiment.

[0008] Hereinafter, a detailed description will be given of a bonding system and a bonding method according to the present disclosure (hereinafter referred to as an "embodiment") with reference to the drawings. Note that the present disclosure is not limited to the embodiment. Furthermore, the embodiments can be appropriately combined as long as the processing content is not contradictory. Furthermore, the same components in the following embodiments are denoted by the same reference numerals, and redundant description will be omitted.

[0009] Furthermore, in the following embodiments, expressions such as "constant," "orthogonal," "perpendicular," or "parallel" may be used, but these expressions do not necessarily mean "constant," "orthogonal," "perpendicular," or "parallel" in the strict sense. In other words, the above expressions allow for deviations due to, for example, manufacturing precision, installation precision, etc.

[0010] In the drawings referred to below, for ease of understanding, the X-axis, Y-axis, and Z-axis directions are defined as being orthogonal to each other, and an orthogonal coordinate system is shown in which the positive Z-axis direction is the vertically upward direction. The rotation direction around the vertical axis is also referred to as the θ direction.

[0011] A conventional bonding system includes a surface modification device that modifies the surfaces of the first and second substrates to be bonded in a reduced pressure atmosphere, and a load lock chamber that can switch the atmosphere between atmospheric pressure and reduced pressure. The bonding system also includes a transfer chamber that includes a transfer device for the surface modification device that transfers the first and second substrates between the surface modification device and the load lock chamber. It is also known that a surface modification process is performed inside the surface modification device using a process gas.

[0012] However, in conventional bonding systems, when the first or second substrate is transferred from the load lock chamber to the surface modification apparatus via the transfer chamber, gas supplied to the transfer chamber may enter the surface modification apparatus. In this case, if the type of processing gas used in the surface modification process is different from the type of gas supplied to the transfer chamber, there is a risk of multiple types of gases being mixed inside the surface modification apparatus.

[0013] Therefore, a technology that prevents multiple types of gases from mixing inside the surface modification device is desired.

[0014] First Embodiment 1. Configuration of Bonding System First, the configuration of a bonding system 1 according to a first embodiment will be described with reference to Fig. 1 and Fig. 2. Fig. 1 is a schematic plan view showing the configuration of the bonding system 1 according to the first embodiment, and Fig. 2 is a schematic side view showing the configuration of the bonding system 1 according to the first embodiment. Also, Fig. 3 is a schematic side view of a first substrate W1 and a second substrate W2.

[0015] The bonding system 1 according to the first embodiment shown in FIG. 1 forms a laminated substrate T by bonding a first substrate W1 and a second substrate W2 together (see FIG. 3).

[0016] The first substrate W1 is a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer on which multiple electronic circuits are formed. The second substrate W2 is a bare wafer on which no electronic circuits are formed. The first substrate W1 and the second substrate W2 have approximately the same diameter.

[0017] An electronic circuit may be formed on the second substrate W2. A die (silicon die) may be vacuum- or electrostatically adsorbed to the surface of the second substrate W2. An insulating layer (e.g., a polyimide film) may be formed between the second substrate W2 and the die. The compound semiconductor wafer may be, for example, a wafer containing gallium arsenide, silicon carbide, gallium nitride, indium phosphide, or the like, but is not limited to these.

[0018] Hereinafter, the first substrate W1 may be referred to as the "upper wafer W1", the second substrate W2 may be referred to as the "lower wafer W2", and the overlapped substrate T may be referred to as the "overlapping wafer T".

[0019] 3, of the surfaces of the upper wafer W1, the surface that is bonded to the lower wafer W2 will be referred to as a "bonding surface W1j," and the surface opposite the bonding surface W1j will be referred to as a "non-bonding surface W1n." Also, of the surfaces of the lower wafer W2, the surface that is bonded to the upper wafer W1 will be referred to as a "bonding surface W2j," and the surface opposite the bonding surface W2j will be referred to as a "non-bonding surface W2n."

[0020] 1, the bonding system 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are arranged in this order along the positive direction of the X-axis. The loading / unloading station 2 and the processing station 3 are also integrally connected.

[0021] The carry-in / out station 2 includes a mounting table 10 and a transfer area 20. The mounting table 10 includes a plurality of mounting plates 11. Each mounting plate 11 is loaded with a cassette C1, C2, or C3, which accommodates a plurality of substrates (e.g., 25 substrates) in a horizontal position. The cassette C1 accommodates the upper wafer W1, the cassette C2 accommodates the lower wafer W2, and the cassette C3 accommodates the overlapped wafer T. In the cassettes C1 and C2, the upper wafer W1 and the lower wafer W2 are accommodated with their respective bonding surfaces W1j and W2j facing upward and aligned in the same direction.

[0022] The transfer region 20 is disposed adjacent to the mounting table 10 on the positive side of the X-axis. The transfer region 20 is provided with a transfer path 21 extending in the Y-axis direction and a transfer device 22 that is movable along the transfer path 21. The transfer device 22 is also movable in the X-axis direction and rotatable about the Z-axis, and transfers the upper wafer W1, the lower wafer W2, and the overlapped wafer T between the cassettes C1 to C3 placed on the mounting plate 11 and a third processing block G3 of the processing station 3, which will be described later.

[0023] The number of cassettes C1 to C3 placed on the placement plate 11 is not limited to that shown in the figure. In addition to the cassettes C1, C2, and C3, a cassette for recovering defective substrates may also be placed on the placement plate 11.

[0024] Processing station 3 is provided with multiple processing blocks, e.g., three processing blocks G1, G2, and G3, each equipped with various devices. For example, a first processing block G1 is provided on the rear side (positive Y-axis side in FIG. 1 ) of processing station 3, and a second processing block G2 is provided on the front side (negative Y-axis side in FIG. 1 ) of processing station 3. Furthermore, a third processing block G3 is provided on the load / unload station 2 side of processing station 3 (negative X-axis side in FIG. 1 ).

[0025] A transfer region 60 is formed in an area surrounded by the first to third processing blocks G1 to G3. A transfer device 61 is disposed in the transfer region 60. The transfer device 61 has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis.

[0026] The transfer device 61 moves within the transfer region 60 and transfers the upper wafer W1, the lower wafer W2, and the overlapping wafer T to predetermined devices within the first processing block G1, the second processing block G2, and the third processing block G3 adjacent to the transfer region 60.

[0027] Here, the transfer of the upper wafer W1, the lower wafer W2, and the overlapped wafer T by the transfer device 61 is performed in a normal pressure atmosphere. Note that, although the normal pressure is, for example, atmospheric pressure, it does not have to be exactly the same as atmospheric pressure and may include a pressure range of, for example, ±10 kPa relative to atmospheric pressure. Also, the transfer device 61 is an example of a first transfer device.

[0028] The first processing block G1 is provided with a load lock chamber 31, a transfer chamber 32, a surface modification device 33, and a surface hydrophilization device 34 (see FIG. 2).

[0029] The load lock chamber 31 is located at the position farthest from the load / unload station 2 in the first processing block G1, and is adjacent to the transfer region 60 on the positive Y-axis side via a gate valve 36a. The transfer chamber 32 is located adjacent to the load lock chamber 31 on the negative X-axis side via a gate valve 36b. The surface modification device 33 is located at the position closest to the load / unload station 2 in the first processing block G1, and is adjacent to the transfer chamber 32 on the negative X-axis side via a gate valve 36c.

[0030] The load lock chamber 31 is a chamber in which the upper wafer W1 and the lower wafer W2 are transferred between the transfer device 61 and the surface modification device 33. Specifically, a plurality of transitions 31a1 and 31a2 are provided inside the load lock chamber 31 (see FIG. 2 ). The plurality of transitions 31a1 and 31a2 are used to place the upper wafer W1 or the lower wafer W2. For example, the transition 31a1 places the upper wafer W1 or the lower wafer W2 being transferred from the transfer device 61 to the surface modification device 33, and the transition 31a2 places the upper wafer W1 or the lower wafer W2 being transferred from the surface modification device 33 to the transfer device 61.

[0031] As shown in FIG. 2, the transitions 31a1 and 31a2 are stacked in the vertical direction, but this is not limitative and they may be arranged adjacent to each other in a plan view.

[0032] A vacuum pump 31c (see FIG. 2) is connected to the load lock chamber 31 via a suction pipe 31b. Thus, when, for example, the gate valves 36a and 36b are closed and the vacuum pump 31c is operated, the load lock chamber 31 is depressurized to a reduced pressure atmosphere. On the other hand, when, for example, the gate valve 36a is opened, the load lock chamber 31 communicates with the transfer region 60, which is under atmospheric pressure, and the atmosphere therein becomes atmospheric. In this way, the load lock chamber 31 is configured so that the atmosphere therein can be switched between atmospheric pressure and reduced pressure.

[0033] A transfer device 32a is disposed in the transfer chamber 32. The transfer device 32a has a transfer arm that is movable, for example, vertically, horizontally, and around a vertical axis. The transfer device 32a receives the upper wafer W1 or the like before modification placed on the transition 31a1 of the load lock chamber 31 and transfers it to the surface modification device 33 (hereinafter also referred to as "loading"), or transfers the upper wafer W1 or the like that has been modified in the surface modification device 33 to the load lock chamber 31 (hereinafter also referred to as "unloading") and places it on the transition 31a2 (see FIG. 2). The transfer device 32a is an example of a second transfer device.

[0034] A vacuum pump 32c (see FIG. 2) is connected to the transfer chamber 32 via a suction pipe 32b. When the vacuum pump 31c is activated, the pressure inside the transfer chamber 32 is reduced to create a reduced pressure atmosphere. The gate valve 36b is opened when the load lock chamber 31 is in a reduced pressure atmosphere. Similarly, the gate valve 36c is opened when the surface modification device 33 is in a reduced pressure atmosphere.

[0035] Therefore, the transfer chamber 32 is constantly maintained at a reduced pressure by the vacuum pump 32 c. In this manner, the transfer device 32 a of the transfer chamber 32 is disposed adjacent to the load lock chamber 31, and transfers the upper wafer W1 and the lower wafer W2 between the load lock chamber 31 and the surface modification device 33 in a reduced pressure atmosphere.

[0036] The surface modification device 33 modifies the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2. A vacuum pump 33c (see FIG. 2) is connected to the surface modification device 33 via a suction pipe 33b. When the vacuum pump 33c is activated, the interior of the surface modification device 33 is depressurized to form a reduced pressure atmosphere. Like the transfer chamber 32, the surface modification device 33 also constantly has a reduced pressure atmosphere.

[0037] Therefore, the surface modification device 33 modifies the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2 in a reduced pressure atmosphere. Specifically, the surface modification device 33 cuts the SiO bonds on the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2 to form single-bonded SiO, thereby modifying the bonding surfaces W1j, W2j so that they are easily hydrophilized thereafter.

[0038] In the surface modification device 33, the processing gas is excited into plasma and ionized in a reduced pressure atmosphere. The oxygen ions are then irradiated onto the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2, whereby the bonding surfaces W1j, W2j are subjected to plasma processing and modified.

[0039] The configurations of the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 configured as above, and the transfer of the upper wafer W1 in the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 will be described later.

[0040] 1 and 2, the load lock chamber 31 may be set so that its internal volume is smaller than the internal volumes of the surface modification device 33 and the transfer chamber 32. This allows the time required to switch the internal pressure of the load lock chamber 31 to be shorter than the time required to switch the internal pressure of the surface modification device 33.

[0041] 1, the transfer device 32a may not be disposed in the load lock chamber 31, but may be disposed adjacent to the load lock chamber 31. This allows the load lock chamber 31 to be made smaller than when the transfer device 32a is disposed therein, and as a result, the time required to switch the pressure inside the chamber can be further reduced.

[0042] The surface hydrophilization device 34 (see FIG. 2) hydrophilizes the bonding surfaces W1j, W2j of the upper wafer W1 and the lower wafer W2 using a hydrophilization treatment liquid such as pure water, and also cleans the bonding surfaces W1j, W2j. In the surface hydrophilization device 34, pure water is supplied onto the upper wafer W1 or the lower wafer W2 while rotating the upper wafer W1 or the lower wafer W2 held by, for example, a spin chuck. As a result, the pure water supplied onto the upper wafer W1 or the lower wafer W2 spreads over the bonding surfaces W1j, W2j of the upper wafer W1 or the lower wafer W2, thereby hydrophilizing the bonding surfaces W1j, W2j.

[0043] 2, in the first processing block G1, the load lock chamber 31, the transfer chamber 32, the surface modification device 33, and the surface hydrophilization device 34 are arranged in a stacked manner. Specifically, for example, in the first processing block G1, the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 are arranged in the lower stage on the negative side of the Z axis, while the surface hydrophilization device 34 is arranged in the upper stage on the positive side of the Z axis.

[0044] As described above, in the first embodiment, the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 are disposed below the surface hydrophilization device 34. This allows, for example, the vacuum pumps 31c, 32c, and 33c and the suction pipes 31b, 32b, and 33b connected to the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 to be disposed together below the bonding system 1, thereby enabling the overall system to be made compact.

[0045] Furthermore, since the vacuum pumps 31c, 32c, and 33c are located near the load lock chamber 31, the transfer chamber 32, and the surface modification device 33, the suction pipes 31b, 32b, and 33b can be shortened, thereby minimizing the time required for depressurization.

[0046] 1 are merely examples and are not intended to be limiting. That is, the load lock chamber 31 and the surface modification device 33 may be disposed above the surface hydrophilization device 34. Alternatively, the load lock chamber 31 and the surface modification device 33 may be disposed in the second processing block G2 or the third processing block G3, for example. Furthermore, the load lock chamber 31 and the surface modification device 33 may be disposed on the positive X-axis side of the processing station 3, or in a new station provided between the loading / unloading station 2 and the processing station 3, for example.

[0047] The second processing block G2 is provided with a bonding device 41, a substrate temperature adjustment device 42, and an exhaust port 43. The bonding device 41 is located in the second processing block G2 at a position closest to the load / unload station 2. The substrate temperature adjustment device 42 is located adjacent to the bonding device 41 on the positive X side. The substrate temperature adjustment device 42 is located adjacent to the exhaust port 43 on the negative X side.

[0048] The bonding device 41 bonds the hydrophilized upper wafer W1 and lower wafer W2 together by intermolecular forces.

[0049] The substrate temperature adjusting device 42 adjusts the temperatures of the upper wafer W1 before bonding and the lower wafer W2 before bonding.

[0050] The exhaust port 43 exhausts temperature-controlled gas (hereinafter referred to as "temperature-controlled air"). That is, the processing station 3 is provided with an air inlet that is arranged at an appropriate position, for example, on the ceiling of the loading / unloading station 2 side, and supplies temperature-controlled air. The exhaust port 43 exhausts the temperature-controlled air that has been supplied from the air inlet and passed through the processing station 3 to the outside of the processing station 3.

[0051] Therefore, in the processing station 3, the bonding device 41, the substrate temperature adjusting device 42, and the exhaust port are arranged in this order in the flow direction of the temperature-controlled air (positive direction of the X-axis). In other words, the substrate temperature adjusting device 42 is arranged downstream of the bonding device 41 in the flow direction of the temperature-controlled air.

[0052] The location of the exhaust port 43 is not limited to the example shown in the figure, and it may be located at other locations, such as near the load lock chamber 31 or near the transfer area 60. The location of the air inlet is also not limited to the above, and it may be located at other locations, such as on the floor or wall of the processing station 3.

[0053] 2, in the third processing block G3, a position adjustment device 51, transitions 53 and 54, and a reversing transition 55 are stacked in this order from top to bottom. Note that the locations of the devices in the third processing block G3 are merely examples and are not intended to be limiting.

[0054] The bonding system 1 also includes a control device 100. The control device 100 controls the operation of the bonding system 1. The control device 100 is, for example, a computer, and includes a control unit 101 and a storage unit 102. The control unit 101 includes a microcomputer having a central processing unit (CPU), read-only memory (ROM), random access memory (RAM), input / output ports, and various circuits. The CPU of the microcomputer realizes the control described below by reading and executing a program stored in the ROM. The storage unit 102 is, for example, realized by a semiconductor memory element such as RAM or flash memory, or a storage device such as a hard disk or optical disk.

[0055] The program may be recorded on a computer-readable recording medium and installed from the recording medium into the storage unit 102 of the control device 100. Examples of computer-readable recording media include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnetic optical disk (MO), and a memory card.

[0056] 2. Configuration of Surface Modification Apparatus Next, the configuration of the surface modification apparatus 33 will be described with reference to Fig. 4. Fig. 4 is a schematic cross-sectional view showing the configuration of the surface modification apparatus 33.

[0057] 4, the surface modification apparatus 33 has a processing vessel 70 whose interior can be sealed. A loading / unloading port 71 for the upper wafer W1 or the lower wafer W2 is formed on the side of the processing vessel 70 facing the transfer chamber 32 (see FIG. 1), and the loading / unloading port 71 is provided with a gate valve 36c.

[0058] A stage 80 is disposed inside the processing vessel 70. The stage 80 is, for example, a lower electrode and is made of a conductive material such as aluminum. A plurality of driving units 81, each including, for example, a motor, are provided below the stage 80. The plurality of driving units 81 raise and lower the stage 80.

[0059] An exhaust ring 103 having a plurality of baffle holes is disposed between the stage 80 and the inner wall of the processing vessel 70. The exhaust ring 103 allows the atmosphere in the processing vessel 70 to be uniformly exhausted from the processing vessel 70.

[0060] A power feed rod 104 made of a conductor is connected to the underside of the stage 80. A first high-frequency power supply 106 is connected to the power feed rod 104 via a matching box 105 formed, for example, by a blocking capacitor. During plasma processing, a given high-frequency voltage is applied to the stage 80 from the first high-frequency power supply 106.

[0061] An upper electrode 110 is disposed inside the processing vessel 70. The upper surface of the stage 80 and the lower surface of the upper electrode 110 are disposed parallel to each other and facing each other with a given gap therebetween. The gap between the upper surface of the stage 80 and the lower surface of the upper electrode 110 is adjusted by a driving unit 81.

[0062] The upper electrode 110 is grounded and connected to the ground potential. Since the upper electrode 110 is grounded in this manner, damage to the lower surface of the upper electrode 110 can be suppressed during plasma processing.

[0063] In this manner, a high frequency voltage is applied from the first high frequency power supply 106 to the stage 80 serving as the lower electrode, thereby generating plasma inside the processing vessel 70 .

[0064] A hollow portion 120 is formed inside the upper electrode 110. A gas supply pipe 121 is connected to the hollow portion 120. A first gas supply unit 122 is connected to the gas supply pipe 121.

[0065] The first gas supply unit 122 supplies a processing gas to the hollow portion 120 of the upper electrode 110 via a gas supply pipe 121. The processing gas may be, for example, oxygen gas, nitrogen gas, or argon gas. The first gas supply unit 122 includes a nitrogen gas supply unit 123, an oxygen gas supply unit 124, an argon gas supply unit 125, and a first switching unit 126.

[0066] The nitrogen gas supply unit 123 includes a nitrogen gas supply source 123a and a pressure control valve 123b. The nitrogen gas supply source 123a supplies, for example, nitrogen (N ２ The pressure control valve 123b controls the amount of nitrogen gas supplied to the interior of the surface modification device 33 so that the pressure inside the surface modification device 33 becomes a predetermined pressure.

[0067] The oxygen gas supply unit 124 includes an oxygen gas supply source 124a and a pressure control valve 124b. The oxygen gas supply source 124a supplies, for example, oxygen (O ２ The pressure control valve 124b controls the amount of oxygen gas supplied to the inside of the surface modification device 33 so that the pressure inside the surface modification device 33 becomes a predetermined pressure.

[0068] The argon gas supply unit 125 includes an argon gas supply source 125a and a pressure control valve 125b. The argon gas supply source 125a is, for example, a tank that stores argon (Ar) gas. The pressure control valve 125b controls the amount of argon gas supplied to the surface modification device 33 so that the pressure inside the surface modification device 33 becomes a predetermined pressure. Note that the pressure control valves 123b, 124b, and 125b may be a common pressure control valve.

[0069] The first switching unit 126 is provided at a confluence of a flow path for nitrogen gas supplied from the nitrogen gas supply source 123a, a flow path for oxygen gas supplied from the oxygen gas supply source 124a, and a flow path for argon gas supplied from the argon gas supply source 125a. The first switching unit 126 switches the type of gas supplied to the upper electrode 110. Specifically, the control unit 101 controls the first switching unit 126 to switch the type of gas supplied to the upper electrode 110 to nitrogen gas, oxygen gas, or argon gas. For example, when the control unit 101 controls the first switching unit 126 to switch the type of gas supplied to the upper electrode 110 to nitrogen gas, the nitrogen gas supplied from the nitrogen gas supply source 123a is supplied at a rate controlled by the pressure control valve 123b and introduced into the hollow portion 120 of the upper electrode 110 via the first switching unit 126 and the gas supply pipe 121.

[0070] Similarly, when the control unit 101 controls the first switching unit 126 to switch the gas type supplied to the upper electrode 110 to oxygen gas, the supply amount of oxygen gas supplied from the oxygen gas supply source 124a is controlled by the pressure control valve 124b, and the oxygen gas is introduced into the hollow portion 120 of the upper electrode 110 via the first switching unit 126 and the gas supply pipe 121.

[0071] Similarly, when the control unit 101 controls the first switching unit 126 to switch the type of gas supplied to the upper electrode 110 to argon gas, the supply amount of argon gas supplied from the argon gas supply source 125a is controlled by the pressure control valve 125b, and the argon gas is introduced into the hollow portion 120 of the upper electrode 110 via the first switching unit 126 and the gas supply pipe 121. In this way, the first gas supply unit 122 is configured to be able to supply multiple types of gases into the interior of the surface modification device 33.

[0072] A baffle plate 127 for promoting uniform diffusion of the processing gas and the static elimination gas is provided inside the hollow portion 120. A large number of small holes are provided in the baffle plate 127. A large number of gas outlets 128 are formed on the lower surface of the upper electrode 110 to eject the processing gas and the static elimination gas from the hollow portion 120 into the processing vessel 70.

[0073] The processing vessel 70 has a suction port 129. The suction port 129 is connected to a suction pipe 33b that communicates with a vacuum pump 33c that reduces the pressure inside the processing vessel 70 to a given vacuum level.

[0074] In the surface modification device 33 configured as above, the surface modification process is carried out using one of a plurality of types of process gases.

[0075] Here, in a conventional bonding system, a technique for supplying gas into the transfer chamber to adjust the pressure inside the transfer chamber is known. However, for example, when the upper wafer W1 or the lower wafer W2 is transferred from the load lock chamber 31 to the surface modification device 33 via the transfer chamber 32, the gas supplied into the transfer chamber 32 may enter the surface modification device 33. If a different type of gas is used as the processing gas for the surface modification process from the gas supplied into the transfer chamber 32, the gas entering the surface modification device 33 from the transfer chamber 32 will cause multiple types of gas to mix inside the surface modification device 33. In such a case, for example, it is necessary to remove the gas from inside the surface modification device 33 before performing the surface modification process, which may increase the processing time.

[0076] Therefore, the bonding system 1 according to the first embodiment is configured so that the same type of gas as the multiple types of gases supplied to the interior of the surface modification device 33 can also be supplied to the interior of the transfer chamber 32. This makes it possible to supply the same type of gas as the processing gas used for the surface modification process of the surface modification device 33 to the interior of the transfer chamber 32 when the upper wafer W1 and the lower wafer W2 are loaded. This makes it possible to prevent the multiple types of gases from mixing inside the surface modification device 33 during such loading. Hereinafter, the configuration of the gas supply unit that supplies gas to the interior of the transfer chamber 32 will be described with reference to FIG. 5 .

[0077] FIG. 5 is a schematic plan view showing the configuration of the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 according to the first embodiment.

[0078] 5 , the transfer chamber 32 includes a second gas supply unit 130. The second gas supply unit 130 supplies gas into the transfer chamber 32. The gas supplied into the transfer chamber 32 is used, for example, to adjust the pressure inside the transfer chamber 32. The gas supplied into the transfer chamber 32 is the same type of gas as the processing gas supplied into the surface modification device 33. For example, the gas supplied into the transfer chamber 32 is oxygen gas, nitrogen gas, or argon gas. The second gas supply unit 130 includes a nitrogen gas supply unit 133, an oxygen gas supply unit 134, an argon gas supply unit 135, a second switch unit 136, and a supply port 137.

[0079] The nitrogen gas supply unit 133 includes a nitrogen gas supply source 133a and a pressure control valve 133b. The nitrogen gas supply source 133a supplies, for example, nitrogen (N ２ ) is a tank for storing nitrogen gas. The nitrogen gas supply source 133a may be the same as the nitrogen gas supply source 123a. The pressure control valve 133b controls the amount of nitrogen gas supplied to the transfer chamber 32 so that the pressure inside the transfer chamber 32 becomes a predetermined pressure.

[0080] The oxygen gas supply unit 134 includes an oxygen gas supply source 134a and a pressure control valve 134b. The oxygen gas supply source 134a supplies, for example, oxygen (O ２ ) is a tank for storing oxygen gas. The oxygen gas supply source 134a may be the same as the oxygen gas supply source 124a. The pressure control valve 134b controls the amount of oxygen gas supplied to the transfer chamber 32 so that the pressure inside the transfer chamber 32 becomes a predetermined pressure.

[0081] The argon gas supply unit 135 includes an argon gas supply source 135a and a pressure control valve 135b. The argon gas supply source 135a is, for example, a tank that stores argon (Ar) gas. The argon gas supply source 135a may be the same supply source as the argon gas supply source 125a. The pressure control valve 135b controls the amount of argon gas supplied into the transfer chamber 32 so that the pressure inside the transfer chamber 32 becomes a predetermined pressure. Note that the pressure control valves 133b, 134b, and 135b may be a common pressure control valve.

[0082] The second switching unit 136 is provided at the confluence of the nitrogen gas flow path supplied from the nitrogen gas supply source 133a, the oxygen gas flow path supplied from the oxygen gas supply source 134a, and the argon gas flow path supplied from the argon gas supply source 135a. The second switching unit 136 switches the type of gas supplied into the transfer chamber 32. Specifically, the control unit 101 controls the second switching unit 136 to switch the type of gas supplied into the transfer chamber 32 to nitrogen gas, oxygen gas, or argon gas. For example, when the control unit 101 controls the second switching unit 136 to switch the type of gas supplied into the transfer chamber 32 to nitrogen gas, the nitrogen gas supplied from the nitrogen gas supply source 133a is supplied at a rate controlled by the pressure control valve 133b and introduced into the transfer chamber 32 from the supply port 137 via the second switching unit 136.

[0083] Similarly, when the control unit 101 controls the second switching unit 136 to switch the gas type supplied into the interior of the transfer chamber 32 to oxygen gas, the supply amount of oxygen gas supplied from the oxygen gas supply source 134a is controlled by the pressure control valve 134b, and the oxygen gas is introduced into the interior of the transfer chamber 32 from the supply port 137 via the second switching unit 136.

[0084] Similarly, when the control unit 101 controls the second switching unit 136 to switch the type of gas supplied into the transfer chamber 32 to argon gas, the argon gas supplied from the argon gas supply source 135a is supplied at a rate controlled by the pressure control valve 135b, and is introduced into the transfer chamber 32 from the supply port 137 via the second switching unit 136. In this way, the second gas supply unit 130 is configured to be able to supply multiple types of gases into the transfer chamber 32.

[0085] With this configuration, when the upper wafer W1 and the lower wafer W2 are loaded, it is possible to supply the same type of gas into the transfer chamber 32 as the processing gas used for the surface modification processing of the surface modification device 33. Therefore, it is possible to prevent multiple types of gases from mixing inside the surface modification device 33 during such loading.

[0086] Although the example shown here is one in which the first switching unit 126 and the second switching unit 136 are provided at branching points of the flow paths of multiple types of gases to switch the type of gas supplied to the transfer chamber 32 and the surface modification device 33, the present invention is not limited to this. For example, the first switching unit 126 may be composed of three on-off valves: an on-off valve provided in the flow path of nitrogen gas supplied from the nitrogen gas supply source 123a, an on-off valve provided in the flow path of oxygen gas supplied from the oxygen gas supply source 124a, and an on-off valve provided in the flow path of argon gas supplied from the argon gas supply source 125a. The same applies to the second switching unit 136.

[0087] Next, the transfer of the upper wafer W1 in the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 according to the first embodiment will be described with reference to FIG. 6 . FIG. 6 is a flowchart showing an example of the transfer process of the upper wafer W1 performed by the bonding system 1 according to the first embodiment. Note that the transfer of the lower wafer W2 is similar to the transfer of the upper wafer W1, and therefore the following description generally also applies to the transfer of the lower wafer W2. The various processes shown in FIG. 6 are executed based on the control of the control unit 101. It is also assumed that the gate valves 36a, 36b, and 36c are all closed before the process of FIG. 6 is started.

[0088] First, the same type of gas is supplied from the first gas supply unit 122 and the second gas supply unit 130 to the interiors of the transfer chamber 32 and the surface modification device 33 (step S101). Specifically, the control unit 101 controls the second switching unit 136 based on recipe information stored in the storage unit 102, which indicates the procedure for the surface modification process by the surface modification device 33, to switch the gas supplied from the second gas supply unit 130 to the same type of gas as the gas supplied to the interior of the surface modification device 33, and supply the same type of gas to the interiors of the transfer chamber 32 and the surface modification device 33.

[0089] Next, the cassette C1 containing a plurality of upper wafers W1, the cassette C2 containing a plurality of lower wafers W2, and the empty cassette C3 are placed on a predetermined loading plate 11 in the carry-in / out station 2. Thereafter, the upper wafer W1 in the cassette C1 is removed by the transfer device 22 and transferred to the transition 53 of the third processing block G3 of the processing station 3.

[0090] Next, when the unmodified upper wafer W1 is transferred by the transfer device 61 to the load lock chamber 31 of the first processing block G1, the gate valve 36a is opened and the unmodified upper wafer W1 is placed in the transition 31a1 of the load lock chamber 31 (step S102). Note that when the unmodified upper wafer W1 is placed in the transition 31a1, the upper wafer W1 or the lower wafer W2 that has already been modified in the previous processing may be placed in the transition 31a2. In such a case, the transfer device 61 may be configured to place the unmodified upper wafer W1 in the transition 31a1, receive the upper wafer W1 or the lower wafer W2 on the transition 31a2, and then exit the load lock chamber 31.

[0091] Next, after the gate valve 36a is closed, the vacuum pump 31c is operated to reduce the pressure in the load lock chamber 31 to a reduced pressure atmosphere (step S103).

[0092] Next, the gate valves 36b and 36c are opened, and the upper wafer W1 is transferred from the load lock chamber 31 to the surface modification device 33 by the transfer device 32a of the transfer chamber 32. Next, the gate valves 36b and 36c are closed, and the process gas is excited into plasma and ionized in a reduced pressure atmosphere in the surface modification device 33. The oxygen ions are irradiated onto the bonding surface W1j of the upper wafer W1, and the bonding surface W1j is subjected to plasma processing. As a result, the bonding surface W1j of the upper wafer W1 is modified (step S104).

[0093] When the modification process is completed, the gate valves 36b and 36c are opened, and the upper wafer W1 is transferred by the transfer device 32a from the surface modification device 33 to the load lock chamber 31 and placed in the transition 31a2. After the gate valves 36b and 36c are closed, an air release valve (not shown) provided in the load lock chamber 31 is opened, thereby switching the atmosphere in the load lock chamber 31 from a reduced pressure atmosphere to an atmospheric atmosphere (step S105). As described above, the load lock chamber 31 is set to an atmospheric atmosphere, while the transfer chamber 32 and the surface modification device 33 remain in a reduced pressure atmosphere. The transfer device 61 then removes the modified upper wafer W1 from the transition 31a2 of the load lock chamber 31 and transfers it to the surface hydrophilization device 34 where the next process will be performed.

[0094] As described above, when an upper wafer or a lower wafer is carried into the surface modification device 33 from the load lock chamber 31 via the transfer chamber 32, the same type of gas among the plurality of types of gas is supplied from the first gas supply unit 122 and the second gas supply unit 130 to the inside of the surface modification device 33 and the transfer chamber 32. Specifically, for example, the control unit 101 controls the second switching unit 136 based on recipe information that indicates the procedure of the surface modification process by the surface modification device 33 and is stored in the storage unit 102, to switch the gas supplied from the second gas supply unit 130 to the inside of the transfer chamber to the same type of gas as the gas supplied to the inside of the surface modification device 33.

[0095] This makes it possible to prevent a plurality of gases from being mixed inside the surface modification device 33 when the upper wafer W1 or the lower wafer W2 is carried in.

[0096] In the first embodiment, the user may manually perform the process of step S103. On the other hand, by having the control unit 101 automatically perform the process of step S103, it is possible to prevent a plurality of types of gases from mixing inside the surface modification device 33 even when the user is away from the bonding system 1.

[0097] As described above, the bonding system 1 according to the first embodiment is configured to be able to supply multiple types of gases into the transfer chamber 32. This makes it possible to supply the same type of gas as the processing gas used for the surface modification process of the surface modification device 33 into the transfer chamber 32 when the upper wafer W1 and the lower wafer W2 are loaded. This makes it possible to prevent multiple types of gases from mixing inside the surface modification device 33 during the loading process.

[0098] 7 is a schematic plan view showing the configuration of a load lock chamber 31, a transfer chamber 32, and a surface modification device 33 according to the second embodiment. In the first embodiment described above, an example has been shown in which the transfer chamber 32 is provided with the second gas supply unit 130 capable of supplying multiple types of gases to the interior of the transfer chamber 32. However, the load lock chamber 31 may also be provided with a gas supply unit capable of supplying multiple types of gases to the interior of the load lock chamber 31.

[0099] 7 , the load lock chamber 31 includes a third gas supply unit 140. The third gas supply unit 140 supplies gas to the inside of the load lock chamber 31. The gas supplied to the inside of the load lock chamber 31 is used, for example, to cool the inside of the load lock chamber 31. Alternatively, such gas may be used to cool the inside of the load lock chamber 31. The gas supplied to the inside of the load lock chamber 31 is the same type of gas as the processing gas supplied to the inside of the surface modification device 33, such as oxygen gas, nitrogen gas, or argon gas. The third gas supply unit 140 includes a nitrogen gas supply unit 143, an oxygen gas supply unit 144, an argon gas supply unit 145, a third switch unit 146, and a supply port 147.

[0100] The nitrogen gas supply unit 143 includes a nitrogen gas supply source 143a and a pressure control valve 143b. The nitrogen gas supply source 143a supplies, for example, nitrogen (N ２ ) is a tank for storing nitrogen gas. The nitrogen gas supply source 143a may be the same as the nitrogen gas supply source 123a. The pressure control valve 143b controls the amount of nitrogen gas supplied to the load lock chamber 31 so that the pressure inside the load lock chamber 31 becomes a predetermined pressure.

[0101] The oxygen gas supply unit 144 includes an oxygen gas supply source 144a and a pressure control valve 144b. The oxygen gas supply source 144a supplies, for example, oxygen (O ２ ) is a tank for storing oxygen gas. The oxygen gas supply source 144a may be the same as the oxygen gas supply source 124a. The pressure control valve 144b controls the amount of oxygen gas supplied to the load lock chamber 31 so that the pressure inside the load lock chamber 31 becomes a predetermined pressure.

[0102] The argon gas supply unit 145 includes an argon gas supply source 145a and a pressure control valve 145b. The argon gas supply source 145a is, for example, a tank that stores argon (Ar) gas. The argon gas supply source 145a may be the same supply source as the argon gas supply source 125a. The pressure control valve 145b controls the amount of argon gas supplied to the load lock chamber 31 so that the pressure inside the load lock chamber 31 becomes a predetermined pressure. Note that the pressure control valves 143b, 144b, and 145b may be a common pressure control valve.

[0103] The third switching unit 146 is provided at the confluence of the flow path of nitrogen gas supplied from the nitrogen gas supply source 143a, the flow path of oxygen gas supplied from the oxygen gas supply source 144a, and the flow path of argon gas supplied from the argon gas supply source 145a. The third switching unit 146 switches the type of gas supplied into the load lock chamber 31. Specifically, the control unit 101 controls the third switching unit 146 to switch the type of gas supplied into the load lock chamber 31 to nitrogen gas, oxygen gas, or argon gas. For example, when the control unit 101 controls the third switching unit 146 to switch the type of gas supplied into the load lock chamber 31 to nitrogen gas, the nitrogen gas supplied from the nitrogen gas supply source 143a is supplied at a rate controlled by the pressure control valve 143b and introduced into the load lock chamber 31 from the supply port 147 via the third switching unit 146.

[0104] Similarly, when the control unit 101 controls the third switching unit 146 to switch the gas type supplied into the inside of the load lock chamber 31 to oxygen gas, the supply amount of oxygen gas supplied from the oxygen gas supply source 144a is controlled by the pressure control valve 144b, and the oxygen gas is introduced into the inside of the load lock chamber 31 from the supply port 147 via the third switching unit 146.

[0105] Similarly, when the control unit 101 controls the third switching unit 146 to switch the type of gas to be supplied into the load lock chamber 31 to argon gas, the supply amount of argon gas supplied from the argon gas supply source 145a is controlled by the pressure control valve 145b, and the argon gas is introduced into the load lock chamber 31 from the supply port 147 via the third switching unit 146. In this way, the third gas supply unit 140 is configured to be able to supply multiple types of gas into the load lock chamber 31.

[0106] With this configuration, when the upper wafer W1 and the lower wafer W2 are loaded, it is possible to supply the same type of gas into the load lock chamber 31 as the processing gas used for the surface modification processing of the surface modification device 33. Therefore, it is possible to further prevent a plurality of types of gases from mixing inside the surface modification device 33 during such loading.

[0107] Next, the transfer of the upper wafer W1 in the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 according to the second embodiment will be described with reference to FIG. 8 . FIG. 8 is a flowchart showing an example of the transfer process of the upper wafer W1 performed by the bonding system 1 according to the second embodiment. Note that the transfer of the lower wafer W2 is similar to the transfer of the upper wafer W1, and therefore the following description generally also applies to the transfer of the lower wafer W2. The various processes shown in FIG. 8 are executed based on the control of the control unit 101. It is also assumed that the gate valves 36a, 36b, and 36c are all closed before the process of FIG. 8 is started.

[0108] First, the same type of gas is supplied from the first gas supply unit 122, the second gas supply unit 130, and the third gas supply unit 140 to the inside of the load lock chamber 31, the transfer chamber 32, and the surface modification device 33 (step S201). Specifically, the control unit 101 controls the second switching unit 136 based on recipe information stored in the storage unit 102, which indicates the procedure for the surface modification process by the surface modification device 33, to switch the gas supplied from the second gas supply unit 130 to the inside of the transfer chamber 32 to the same type of gas as the gas supplied to the inside of the surface modification device 33. Similarly, the control unit 101 controls the third switching unit 146 to switch the gas supplied from the third gas supply unit 140 to the inside of the load lock chamber 31 to the same type of gas as the gas supplied to the inside of the surface modification device 33. As a result, the same type of gas is supplied to the inside of the load lock chamber 31, the transfer chamber 32, and the surface modification device 33.

[0109] Next, the unmodified upper wafer W1 is transferred by the transfer device 61 to the load lock chamber 31 of the first processing block G1, and processing similar to steps S102, S103, and S104 is performed (steps S202, S203, and S204).

[0110] When the modification process is completed, the gate valves 36b and 36c are opened, and the upper wafer W1 is transferred from the surface modification device 33 to the load lock chamber 31 by the transfer device 32a and placed on the transition 31a2 (step S205).

[0111] After the gate valves 36b and 36c are closed, a determination process is performed to determine whether the gas supplied to the load lock chamber 31 when the upper wafer W1 is loaded (step S203) is an inert gas such as nitrogen gas or argon gas (step S206). If the gas supplied to the load lock chamber 31 is an inert gas (step S206, Yes), the control unit 101 proceeds to the next process (step S208). On the other hand, if the gas supplied to the load lock chamber 31 is a gas other than an inert gas, i.e., an active gas (step S206, No), the control unit 101 controls the third switching unit 146 to switch the gas supplied from the third gas supply unit 140 to the inert gas (step S207).

[0112] Thereafter, an air release valve (not shown) provided in the load lock chamber 31 is opened, thereby switching the atmosphere in the load lock chamber 31 from the reduced pressure atmosphere to the air atmosphere (step S208). Then, the transfer device 61 removes the modified upper wafer W1 from the transition 31a2 of the load lock chamber 31 and transfers it to the surface hydrophilization device 34 where the next process will be performed.

[0113] As described above, based on the recipe information stored in the memory unit 102 indicating the procedure for the surface modification process by the surface modification device 33, the control unit 101 controls the second switching unit 136 to switch the gas supplied from the second gas supply unit 130 to the interior of the transfer chamber 32 to the same type of gas as the gas supplied to the interior of the surface modification device 33, and controls the third switching unit 146 to switch the gas supplied from the third gas supply unit 140 to the same type of gas as the gas supplied to the interior of the surface modification device 33. This makes it possible to further prevent multiple types of gases from mixing inside the surface modification device 33 when the upper wafer W1 or the lower wafer W2 is loaded.

[0114] Furthermore, if a gas other than the inert gas among the plurality of gases is supplied to the interior of the surface modification device 33, the transfer chamber 32, and the load lock chamber 31 when the upper wafer W1 or the lower wafer W2 is loaded, the control unit 101 controls the third switching unit 146 to supply the inert gas to the interior of the load lock chamber 31 when the upper wafer W1 or the lower wafer W2 is unloaded from the surface modification device 33 to the load lock chamber 31 via the transfer chamber 32. This reduces the possibility that the concentration of the active gas inside the load lock chamber 31 will increase when the gate valve 36a is opened to create an atmospheric atmosphere in the load lock chamber 31 in a subsequent process.

[0115] The disclosed embodiments should be considered in all respects as illustrative and not restrictive. Indeed, the above-described embodiments may be embodied in various forms. Furthermore, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

[0116] The present disclosure can be configured as follows. (1) A bonding system comprising: a first transfer device that transfers a first substrate and a second substrate in an atmospheric pressure atmosphere; a surface modification device that modifies surfaces of the first substrate and the second substrate to be bonded in a reduced pressure atmosphere; a load lock chamber in which the first substrate and the second substrate are transferred between the first transfer device and the surface modification device and the atmosphere in the chamber can be switched between atmospheric pressure and a reduced pressure atmosphere; a transfer chamber that is disposed adjacent to the load lock chamber and in which a second transfer device that transfers the first substrate and the second substrate in a reduced pressure atmosphere between the load lock chamber and the surface modification device is disposed; a surface hydrophilization device that hydrophilizes the surfaces of the first substrate and the second substrate modified by the surface modification device; and a bonding device that bonds the first substrate and the second substrate that have been hydrophilized by the surface hydrophilization device, wherein the surface modification device comprises: a first gas supply unit configured to be able to supply a plurality of types of gases into the surface modification device; and a first switching unit that switches the type of gas to be supplied into the surface modification device, a bonding system, wherein the transfer chamber comprises: a second gas supply unit configured to be able to supply the plurality of types of gases into the transfer chamber; and a second switching unit that switches the type of gas supplied into the transfer chamber. (2) The bonding system described in (1), wherein, when the first substrate and the second substrate are transferred from the load lock chamber to the surface modification device via the transfer chamber, the same type of gas among the plurality of types of gas is supplied from the first gas supply unit and the second gas supply unit to the interior of the surface modification device and the transfer chamber. (3) The bonding system described in (1), further comprising: a control unit that controls the second switching unit to switch the gas supplied from the second gas supply unit into the transfer chamber to the same type of gas as the gas supplied into the surface modification device based on recipe information that indicates a procedure for surface modification processing by the surface modification device. (4) The bonding system according to (1) or (2), wherein the load lock chamber includes: a third gas supply unit configured to be able to supply the plurality of types of gases into the load lock chamber; and a third switching unit configured to switch the type of gas supplied into the transfer chamber.(5) The bonding system according to (4), further comprising a control unit that controls the second switching unit to switch the gas supplied from the second gas supply unit to the inside of the transfer chamber to the same type of gas as the gas supplied to the inside of the surface modification device, and controls the third switching unit to switch the gas supplied from the third gas supply unit to the same type of gas as the gas supplied to the inside of the surface modification device, based on recipe information indicating a procedure of the surface modification treatment by the surface modification device. (6) The bonding system according to (5), further comprising: a control unit that controls the third switching unit to supply the inert gas to the inside of the load lock chamber when the first substrate or the second substrate is transferred from the surface modification device to the load lock chamber via the transfer chamber if a gas other than an inert gas among the plurality of types of gases is supplied to the inside of the surface modification device, the transfer chamber, and the load lock chamber when the first substrate or the second substrate is transferred from the surface modification device to the load lock chamber via the transfer chamber. (7) In the bonding system described in (1), the bonding method includes the steps of: carrying the first substrate or the second substrate from the load lock chamber to the surface modification device via the transfer chamber; and supplying the same type of gas among the plurality of types of gas from the first gas supply unit and the second gas supply unit to the inside of the surface modification device and the transfer chamber.

[0117] REFERENCE SIGNS LIST 1 Bonding system 31 Load lock chamber 32 Transfer chamber 32a Transfer device 33 Surface modification device 34 Surface hydrophilization device 41 Bonding device 61 Transfer device 100 Control device 101 Control unit 102 Memory unit 122 First gas supply unit 126 First switching unit 130 Second gas supply unit 136 Second switching unit 140 Third gas supply unit 146 Third switching unit

Claims

1. A bonding system comprising: a first transfer device which transfers a first substrate and a second substrate in a normal pressure atmosphere; a surface modification device which modifies surfaces of the first substrate and the second substrate to be bonded in a reduced pressure atmosphere; a load lock chamber in which the first substrate and the second substrate are transferred between the first transfer device and the surface modification device and the atmosphere in the chamber can be switched between an atmospheric atmosphere and a reduced pressure atmosphere; a transfer chamber which is disposed adjacent to the load lock chamber and in which a second transfer device which transfers the first substrate and the second substrate in a reduced pressure atmosphere between the load lock chamber and the surface modification device is disposed; a surface hydrophilization device which hydrophilizes the surfaces of the first substrate and the second substrate modified by the surface modification device; and a bonding device which bonds the first substrate and the second substrate which have been hydrophilized by the surface hydrophilization device, wherein the surface modification device comprises a first gas supply unit configured to be able to supply a plurality of types of gas into the surface modification device, and a first switching unit which switches the type of gas supplied into the surface modification device, and the transfer chamber comprises a second gas supply unit configured to be able to supply the plurality of types of gases into the interior of the transfer chamber; and a second switching unit configured to switch the type of gas supplied into the interior of the transfer chamber.

2. The bonding system of claim 1, wherein when the first substrate or the second substrate is transported from the load lock chamber to the surface modification device via the transport chamber, the same type of gas among the plurality of types of gas is supplied from the first gas supply unit and the second gas supply unit to the inside of the surface modification device and the transport chamber.

3. A bonding system as described in claim 1, further comprising a control unit that controls the second switching unit based on recipe information indicating the procedure of the surface modification process by the surface modification device, to switch the gas supplied from the second gas supply unit to the inside of the transfer chamber to the same type of gas as the gas supplied to the inside of the surface modification device.

4. The bonding system according to claim 1, wherein the load lock chamber comprises: a third gas supply unit configured to be able to supply the plurality of types of gas into the inside of the load lock chamber; and a third switching unit configured to switch the type of gas supplied into the inside of the transfer chamber.

5. The bonding system described in claim 4, further comprising a control unit which controls the second switching unit based on recipe information indicating a procedure for surface modification processing by the surface modification device to switch the gas supplied from the second gas supply unit to the interior of the transfer chamber to the same type of gas as the gas supplied to the interior of the surface modification device, and controls the third switching unit to switch the gas supplied from the third gas supply unit to the interior of the load lock chamber to the same type of gas as the gas supplied to the interior of the surface modification device.

6. The bonding system of claim 5, wherein when a gas other than an inert gas among the plurality of gases is supplied to the inside of the surface modification device, the transfer chamber and the load lock chamber when the first substrate or the second substrate is transported from the load lock chamber via the transfer chamber to the surface modification device, the control unit controls the third switching unit to supply the inert gas to the inside of the load lock chamber when the first substrate or the second substrate is transported from the surface modification device to the load lock chamber via the transfer chamber.

7. A bonding method in the bonding system according to claim 1, comprising the steps of: transporting the first substrate or the second substrate from the load lock chamber via the transfer chamber into the surface modification device; and supplying the same type of gas among the plurality of types of gas from the first gas supply unit and the second gas supply unit into the interior of the surface modification device and the transfer chamber.

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