Substrate processing apparatus and method for operating substrate processing apparatus

Abstract

Disclosed is a substrate processing apparatus that comprises a chamber, a gas supply unit, and an exhaust system. The gas supply unit supplies a gas into the chamber. The exhaust system is configured to exhaust the gas in the chamber. The exhaust system includes a first exhaust device and a second exhaust device. The first exhaust device is connected to the chamber. The second exhaust device is connected to the chamber via the first exhaust device. The first exhaust device includes an adsorption surface and a flow path. The adsorption surface is configured to adsorb the gas from the chamber through cooling of the adsorption surface. The flow path is configured so that a refrigerant for cooling the adsorption surface flows therein.

Description

Substrate processing apparatus and method for operating the same

[0001] SUMMARY Exemplary embodiments of the present disclosure relate to substrate processing apparatus and methods of operating the same.

[0002] A substrate processing apparatus is used in substrate processing. The substrate processing apparatus includes a chamber, a gas supply unit, and an exhaust unit. The gas supply unit supplies gas into the chamber. The exhaust unit exhausts the gas from the chamber. Patent Document 1 listed below discloses a plasma processing apparatus as a substrate processing apparatus, including a turbomolecular pump connected to the chamber and a dry pump connected to the chamber via the turbomolecular pump.

[0003] JP 2008-192644 Public Relations

[0004] The present disclosure provides a technique that enables a large flow rate of gas to be exhausted in a substrate processing apparatus.

[0005] In one exemplary embodiment, a substrate processing apparatus is provided. The substrate processing apparatus includes a chamber, a gas supply, and an exhaust system. The gas supply is configured to supply gas into the chamber. The exhaust system is configured to exhaust gas from the chamber. The exhaust system includes a first exhaust device and a second exhaust device. The first exhaust device is connected to the chamber. The second exhaust device is connected to the chamber via the first exhaust device. The first exhaust device includes an adsorption surface and a flow path. The adsorption surface is configured to adsorb gas from the chamber by cooling the adsorption surface. The flow path is configured to allow a coolant to flow therethrough for cooling the adsorption surface.

[0006] According to one exemplary embodiment, a technique is provided that allows for high flow rate exhaust of gas in a substrate processing apparatus.

[0007] It is a diagram for explaining an example of the configuration of a plasma processing system. It is a diagram for explaining an example of the configuration of a capacitively coupled plasma processing apparatus. It is a diagram for explaining a substrate processing apparatus according to an exemplary embodiment. It is a diagram for explaining a first exhaust device of the substrate processing apparatus according to an exemplary embodiment. It is a flowchart of an operation method of the substrate processing apparatus according to an exemplary embodiment.

[0008] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0009] First, a plasma processing apparatus, which is a substrate processing apparatus according to one exemplary embodiment, will be described with reference to FIGS.

[0010] FIG. 1 is a diagram illustrating an exemplary configuration of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing apparatus 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing apparatus 1 is an example of a substrate processing apparatus. The plasma processing apparatus 1 includes a plasma processing chamber 10, a substrate support 11, and a plasma generation unit 12. The plasma processing chamber 10 has a plasma processing space. The plasma processing chamber 10 also has at least one gas supply port for supplying at least one processing gas to the plasma processing space and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to a gas supply unit 20 (described later), and the gas exhaust port is connected to an exhaust system 40 (described later). The substrate support 11 is disposed in the plasma processing space and has a substrate support surface for supporting a substrate.

[0011] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be capacitively coupled plasma (CCP), inductively coupled plasma (ICP), electron-cyclotron-resonance plasma (ECR plasma), helicon wave plasma (HWP), or surface wave plasma (SWP). Various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators. In one embodiment, the AC signal (AC power) used in the AC plasma generator has a frequency in the range of 100 kHz to 10 GHz. Thus, AC signals include radio frequency (RF) signals and microwave signals. In one embodiment, the RF signal has a frequency in the range of 100 kHz to 150 MHz.

[0012] The control unit 2 processes computer-executable instructions that cause the plasma processing apparatus 1 to perform various processes described in this disclosure. The control unit 2 may be configured to control each element of the plasma processing apparatus 1 to perform various processes described herein. In one embodiment, part or all of the control unit 2 may be included in the plasma processing apparatus 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 may be implemented by, for example, a computer 2a. The processing unit 2a1 may be configured to read a program from the storage unit 2a2 and execute the read program to perform various control operations. This program may be stored in the storage unit 2a2 in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit 2a2 and read from the storage unit 2a2 by the processing unit 2a1 for execution. The medium may be various storage media readable by the computer 2a or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a random access memory (RAM), a read-only memory (ROM), a hard disk drive (HDD), a solid state drive (SSD), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a local area network (LAN).

[0013] The following describes a configuration example of a capacitively coupled plasma processing apparatus as an example of the plasma processing apparatus 1. Fig. 2 is a diagram for explaining a configuration example of a capacitively coupled plasma processing apparatus.

[0014] The capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply 20, a power supply 30, and an exhaust system 40. The plasma processing apparatus 1 also includes a substrate support 11 and a gas inlet. The gas inlet is configured to introduce at least one process gas into the plasma processing chamber 10. The gas inlet includes a showerhead 13. The substrate support 11 is disposed within the plasma processing chamber 10. The showerhead 13 is disposed above the substrate support 11. In one embodiment, the showerhead 13 forms at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the showerhead 13, a sidewall 10a of the plasma processing chamber 10, and the substrate support 11. The plasma processing chamber 10 is grounded. The showerhead 13 and the substrate support 11 are electrically insulated from the housing of the plasma processing chamber 10.

[0015] The substrate support 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 in a plan view. The substrate W is disposed on the central region 111a of the main body 111, and the ring assembly 112 is disposed on the annular region 111b of the main body 111 so as to surround the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also called a substrate support surface for supporting the substrate W, and the annular region 111b is also called a ring support surface for supporting the ring assembly 112.

[0016] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive member. The conductive member of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is disposed on the base 1110. The electrostatic chuck 1111 includes a ceramic member 1111a and an electrostatic electrode 1111b disposed within the ceramic member 1111a. The ceramic member 1111a has a central region 111a. In one embodiment, the ceramic member 1111a also has an annular region 111b. Note that the annular region 111b may also be provided by another member surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating member. In this case, the ring assembly 112 may be disposed on the annular electrostatic chuck or the annular insulating member, or may be disposed on both the electrostatic chuck 1111 and the annular insulating member. Furthermore, at least one RF / DC electrode coupled to an RF power supply 31 and / or a DC power supply 32, which will be described later, may be disposed within the ceramic member 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. When a bias RF signal and / or a DC signal, which will be described later, is supplied to the at least one RF / DC electrode, the RF / DC electrode is also called a bias electrode. Note that the conductive member of the base 1110 and the at least one RF / DC electrode may function as multiple lower electrodes. Furthermore, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support 11 includes at least one lower electrode.

[0017] The ring assembly 112 includes one or more annular members. In one embodiment, the one or more annular members include one or more edge rings and at least one cover ring. The edge rings are formed of a conductive or insulating material, and the cover rings are formed of an insulating material.

[0018] The substrate support 11 may also include a temperature adjustment module configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112, and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow passage 1110a, or a combination thereof. A heat transfer fluid such as brine or a gas flows through the flow passage 1110a. In one embodiment, the flow passage 1110a is formed in the base 1110, and one or more heaters are disposed in the ceramic member 1111a of the electrostatic chuck 1111. The substrate support 11 may also include a heat transfer gas supply configured to supply a heat transfer gas to a gap between the backside of the substrate W and the central region 111a.

[0019] The showerhead 13 is configured to introduce at least one process gas from the gas supply unit 20 into the plasma processing space 10s. The showerhead 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b, and multiple gas inlets 13c. The process gas supplied to the gas supply port 13a passes through the gas diffusion chamber 13b and is introduced into the plasma processing space 10s from the multiple gas inlets 13c. The showerhead 13 also includes at least one upper electrode. In addition to the showerhead 13, the gas inlet may also include one or more side gas injectors (SGIs) attached to one or more openings formed in the sidewall 10a.

[0020] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from a corresponding gas source 21 to the showerhead 13 via a corresponding flow controller 22. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 20 may include at least one flow modulation device that modulates or pulses the flow rate of the at least one process gas.

[0021] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF power) to at least one lower electrode and / or at least one upper electrode. This generates a plasma from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generation unit 12. Furthermore, by supplying a bias RF signal to the at least one lower electrode, a bias potential is generated on the substrate W, thereby attracting ion components in the formed plasma to the substrate W.

[0022] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit and is configured to generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate multiple source RF signals having different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0023] The second RF generator 31b is coupled to at least one lower electrode via at least one impedance matching circuit and is configured to generate a bias RF signal (bias RF power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100 kHz to 60 MHz. In one embodiment, the second RF generator 31b may be configured to generate multiple bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0024] The power supply 30 may also include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generator 32a and a second DC generator 32b. In one embodiment, the first DC generator 32a is connected to the at least one lower electrode and configured to generate a first DC signal. The generated first DC signal is applied to the at least one lower electrode. In one embodiment, the second DC generator 32b is connected to the at least one upper electrode and configured to generate a second DC signal. The generated second DC signal is applied to the at least one upper electrode.

[0025] In various embodiments, the first and second DC signals may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulses may have a rectangular, trapezoidal, triangular, or combination thereof pulse waveform. In one embodiment, a waveform generator for generating the sequence of voltage pulses from the DC signal is connected between the first DC generator 32a and at least one lower electrode. Thus, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. When the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulses may have either positive or negative polarity. Furthermore, the sequence of voltage pulses may include one or more positive voltage pulses and one or more negative voltage pulses within one period. The first and second DC generating units 32a and 32b may be provided in addition to the RF power supply 31, or the first DC generating unit 32a may be provided instead of the second RF generating unit 31b.

[0026] The exhaust system 40 may be connected to, for example, a gas exhaust port 10e provided at the bottom of the plasma processing chamber 10. The exhaust system 40 may include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s is regulated by the pressure regulating valve. The vacuum pump may include a turbomolecular pump, a dry pump, or a combination thereof.

[0027] Reference will now be made to FIG. 3, which illustrates a substrate processing apparatus according to an exemplary embodiment. In one embodiment, the gas supply unit 20 may be configured to selectively supply a first gas and a second gas to the plasma processing space 10s. The first gas is a processing gas for processing the substrate W in the plasma processing space 10s. The first gas may include hydrogen fluoride.

[0028] The first gas may further include a phosphorus-containing gas. The phosphorus-containing gas may be a halogenated phosphorus gas. In one embodiment, the halogenated phosphorus gas is PF5. ３ Gas and / or PF ５In one embodiment, the halogenated phosphorus gas may be a phosphorus fluoride gas containing fluorine as a halogen element, such as PC1 ３ gas and / or PCl ５ In one embodiment, the halogenated phosphorus gas may be a phosphorus chloride gas containing chlorine as a halogen element, such as PBr ３ Gas, PBr ５ Gas, PI ３ The halogen element may be a gas containing bromine or iodine. In one embodiment, the phosphorus halide gas is PClF ２ Gas, PCl ２ F gas, PCl ２ F ３ The halogenated phosphorus gas may be a gas containing two or more halogen elements, such as a phosphorus oxyhalide gas, a phosphorus oxyfluoride gas, or a phosphorus oxychloride gas. For example, the halogenated phosphorus gas may be POF ３ Gas, POCl ３ Gas, POF ２ Cl ２ Gas, POFC1 ２ Gas or POF ２ It may be Cl gas.

[0029] The first gas may further include at least one selected from the group consisting of a carbon-containing gas, a halogen-containing gas, and an oxygen-containing gas. The carbon-containing gas may be at least one selected from the group consisting of a fluorocarbon gas, a hydrofluorocarbon gas, and a hydrocarbon gas. In one embodiment, the carbon-containing gas is CF ４ , C ２ F ２ , C ２ F ４ , C ３ F ８ , C ４ F ６ , C ４ F ８ and C ５ F ８ In one embodiment, the carbon-containing gas may be at least one fluorocarbon gas selected from the group consisting of CHF ３ , C.H.２ F ２ , C.H. ３ F, C ２ HF ５ , C ２ H ２ F ４ , C ２ H ３ F ３ , C ２ H ４ F ２ , C ３ HF ７ , C ３ H ２ F ２ , C ３ H ２ F ６ , C ３ H ２ F ４ , C ３ H ３ F ５ , C ４ H ５ F ５ , C ４ H ２ F ６ , C ５ H ２ F １０ and C ５ H ３ F ７ In one embodiment, the carbon-containing gas may be at least one hydrofluorocarbon gas selected from the group consisting of CH ４ , C ２ H ６ , C ３ H ６ , C ３ H ８ and C ４ H １０ The gas may be at least one hydrofluorocarbon gas selected from the group consisting of:

[0030] The halogen-containing gas may be a gas containing a halogen other than fluorine, or may be a gas containing fluorine and a halogen other than fluorine. In one embodiment, the halogen-containing gas is Cl ２ , HCl, BCl ３ , ClF ３ In one embodiment, the halogen-containing gas is Br２ , HBr, BrF ３ In one embodiment, the halogen-containing gas is HI, IF, or the like. ５ , IF ７ The halogen-containing gas is CH ｘ Cl ｙ , C.F. ｘ Br ｙ , C.F. ｘ I ｙ The halogen-containing gas may be a carbon-containing halogen-containing gas such as: wherein x and y are each a natural number of 1 or more.

[0031] The oxygen-containing gas is, for example, O ２ , CO, CO ２ , H ２ O and H ２ O ２ It may be at least one selected from the group consisting of:

[0032] The first gas may be used in plasma etching of a film on the substrate W. That is, plasma may be generated from the first gas by the plasma generating unit 12, and the substrate W may be processed by chemical species such as ions and / or radicals from the plasma.

[0033] The second gas is a gas different from the first gas. The second gas may be a cleaning gas for cleaning surfaces in the chamber 10 after substrate processing using the first gas. The second gas may be used in plasma cleaning. That is, plasma may be generated from the second gas by the plasma generating unit 12, and chemical species such as ions and / or radicals from the plasma may clean surfaces in the chamber 10.

[0034] 3, in one embodiment, the space within the chamber 10 may include a plasma processing space 10s and an exhaust space 10d. The plasma processing apparatus 1 may further include a baffle member 14 interposed between the plasma processing space 10s and the exhaust space 10d. The plasma processing space 10s is located above the baffle member 14, and the exhaust space 10d is located below the baffle member 14. The baffle member 14 provides a plurality of through-holes connecting the plasma processing space 10s and the exhaust space 10d. The baffle member 14 extends between the substrate support 11 and the sidewall of the chamber 10.

[0035] The exhaust system 40 includes a first exhaust device 41 and a second exhaust device 42. The exhaust system 40 may further include a pressure regulator 43. The pressure regulator 43 may be a pressure adjustment valve.

[0036] The first exhaust device 41 is connected to the chamber 10 (e.g., the exhaust space 10d). The first exhaust device 41 may be connected to the chamber 10 via a pressure regulator 43. The second exhaust device 42 is connected to the chamber 10 (e.g., the exhaust space 10d) via the first exhaust device 41. The second exhaust device 42 may be a turbomolecular pump or a mechanical booster pump.

[0037] Hereinafter, reference will be made to FIG. 4 in addition to FIG. 3. FIG. 4 is a diagram illustrating a first exhaust device of a substrate processing apparatus according to an exemplary embodiment. The first exhaust device 41 includes a container, an adsorption surface 41s disposed within the container, and a flow path 41f. The adsorption surface 41s is configured to cool the gas from the chamber 10. The adsorption surface 41s may be provided by each of a plurality of plate-shaped bodies (or a plurality of fins). As shown in FIG. 4, the plurality of plate-shaped bodies are alternately arranged with a plurality of gaps. The plurality of plate-shaped bodies may be arranged approximately parallel to one another.

[0038] The flow path 41f passes through the plurality of plate-like bodies. As shown by the arrow in FIG. 4, the flow path 41f may include a portion extending between adjacent plate-like bodies. A coolant for cooling the adsorption surface 41s flows through the flow path 41f, as shown by the arrow in FIG. 4. The gas from the chamber 10 flows through the interior of the container of the first exhaust device 41 toward the second exhaust device 42. Inside the container of the first exhaust device 41, the gas flows through the plurality of gaps provided by the plurality of plate-like bodies. When the gas comes into contact with the adsorption surface 41s inside the container of the first exhaust device 41, it is cooled and liquefied, and is adsorbed onto the adsorption surface 41s.

[0039] 3, in one embodiment, the plasma processing apparatus 1 may further include a supply device 50 configured to supply a coolant to the flow path 41f. The supply device 50 may be configured to supply a heat medium to the flow path 41f in addition to the coolant. The supply device 50 may include a coolant supply device 51 that supplies the coolant and a heat medium supply device 52 that supplies the heat medium. The supply device 50 may also include a valve 511, a valve 512, a valve 521, and a valve 522.

[0040] The refrigerant output port of the refrigerant supplier 51 is connected to one end of the flow path 41f via a valve 511. The refrigerant recovery port of the refrigerant supplier 51 is connected to the other end of the flow path 41f via a valve 512. The heat medium output port of the heat medium supplier 52 is connected to one end of the flow path 41f via a valve 521. The heat medium recovery port of the heat medium supplier 52 is connected to the other end of the flow path 41f via a valve 522. When the valves 511 and 512 are open and the valves 521 and 522 are closed, the refrigerant is supplied from the refrigerant supplier 51 to the flow path 41f and returned from the flow path 41f to the refrigerant supplier 51. When the valves 511 and 512 are closed and the valves 521 and 522 are open, the heat medium is supplied from the heat medium supplier 52 to the flow path 41f and returned from the flow path 41f to the heat medium supplier 52.

[0041] In one embodiment, the coolant output port of the coolant supplier 51 may be connected to one end of the flow path 41f via the flow path 1110a of the substrate support 11. Also, the heat medium output port of the heat medium supplier 52 may be connected to one end of the flow path 41f via the flow path 1110a. Alternatively, the coolant output port of the coolant supplier 51 and the heat medium output port of the heat medium supplier 52 may be connected to one end of the flow path 41f without via the flow path 1110a. In this case, the coolant and / or the heat medium may be supplied to the flow path 1110a from a supply device separate from the supply device 50.

[0042] Hereinafter, a method for operating a substrate processing apparatus according to one exemplary embodiment will be described with reference to FIG. 5 . FIG. 5 is a flowchart of a method for operating a substrate processing apparatus according to one exemplary embodiment. The operating method shown in FIG. 5 (hereinafter referred to as "method MT") can be applied to a plasma processing apparatus 1. In method MT, each component of the plasma processing apparatus 1 can be controlled by a controller 2. Hereinafter, control by the controller 2 in the operation of the plasma processing apparatus 1 will also be described.

[0043] The method MT may start with a step STp. In the step STp, a substrate W is prepared on the substrate support 11. Next, a step STa is performed in the method MT. In the step STa, a first gas is supplied from the gas supply unit 20 into the chamber 10. In the step STa, the control unit 2 controls the gas supply unit 20 to supply the first gas having a specified flow rate into the chamber 10. The flow rate of the first gas in the step STa may be greater than the flow rate of the second gas in a step STc described below. The flow rate of the first gas in the step STa may be a flow rate that would prevent the pressure in the chamber 10 from reaching the target pressure if the second exhaust device 42 were used alone. On the other hand, the flow rate of the second gas in the step STc may be a flow rate that would allow the pressure in the chamber 10 to reach the target pressure even if the second exhaust device 42 were used alone.

[0044] In the process STa, plasma may be generated from the first gas in the chamber 10. In this case, the control unit 2 controls the plasma generating unit 12 to generate plasma from the first gas. For example, the control unit 2 may control the first RF generating unit 31a in the process STa. Also, in the process STa, an electric bias may be supplied to the lower electrode of the substrate support unit 11 to attract ions from the plasma generated from the first gas to the substrate W. The electric bias may be the above-mentioned bias RF signal or a pulsed first DC signal. In this case, in the process STa, the control unit 2 controls the second RF generating unit 31b or the first DC generating unit 32a.

[0045] Process STb is performed during the period in which process STa is being performed. In process STb, gas from the chamber 10 is exhausted using the first exhaust device 41. In process STb, gas from the chamber 10 is adsorbed onto the adsorption surface 41s of the first exhaust device 41. For this reason, in process STb, a coolant is supplied from the supply device 50 to the flow path 41f. The coolant may be supplied to the flow path 41f via the flow path 1110a. The temperature of the coolant supplied to the flow path 41f may be set to 0°C or lower. When the first gas contains hydrogen fluoride, the temperature of the coolant supplied to the flow path 41f may be set to -70°C or lower to adsorb the hydrogen fluoride onto the adsorption surface 41s. Note that in process STb, gas from the chamber 10 may be exhausted using the second exhaust device 42 in addition to the first exhaust device 41.

[0046] In step STb, the control unit 2 controls the supply device 50 to supply a refrigerant having a specified temperature to the flow path 41f. In one embodiment, the control unit 2 may control the supply device 50 to cause the refrigerant supplier 51 to supply the refrigerant, open the valves 511 and 512, and close the valves 521 and 522. In addition, in step STb, the control unit 2 may control the second exhaust device 42 to also perform exhaust by the second exhaust device 42.

[0047] Next, process STc is performed. Process STc is performed after the substrate W is processed in process STa. After process STa and before process STc, the substrate W may be unloaded from the inside of the chamber 10 to the outside. In process STc, a second gas is supplied from the gas supply unit 20 into the chamber 10. In process STc, the control unit 2 controls the gas supply unit 20 to supply the second gas having a specified flow rate into the chamber 10. The second gas may be a cleaning gas for cleaning surfaces in the chamber 10.

[0048] In the process STc, plasma may be generated from the second gas in the chamber 10. In this case, the control unit 2 controls the plasma generating unit 12 to generate plasma from the second gas. For example, the control unit 2 may control the first RF generating unit 31a in the process STc.

[0049] Process STd is performed during the period when process STc is being performed. In process STd, the gas in the chamber 10 and the gas that has been vaporized and desorbed from the adsorption surface 41s are exhausted by the second exhaust device 42. In process STd, a heat medium may be supplied from the supply device 50 to the flow path 41f. The heat medium may be supplied to the flow path 41f via the flow path 1110a.

[0050] In step STd, the control unit 2 controls the second exhaust device 42 to perform exhaust by the second exhaust device 42. In step STd, the control unit 2 may control the supply device 50 to supply a heat medium having a designated temperature to the flow path 41f. In one embodiment, the control unit 2 may control the supply device 50 to cause the heat medium supplier 52 to supply the heat medium, close the valves 511 and 512, and open the valves 521 and 522.

[0051] As described above, in the plasma processing apparatus 1, it is possible to exhaust a relatively large flow rate of gas by the first exhaust device 41. Furthermore, after using the first exhaust device 41, it is possible to desorb the gas from the adsorption surface 41s and exhaust the gas by the second exhaust device 42. Note that when a heat medium is supplied to the flow path 41f, it is possible to promote desorption of the gas from the adsorption surface 41s.

[0052] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0053] Although the substrate processing apparatus according to the above-described exemplary embodiment is a plasma processing apparatus, the present disclosure is also applicable to substrate processing apparatuses other than plasma processing apparatuses.

[0054] Various exemplary embodiments included in the present disclosure are now described in [E1] to [E18] below.

[0055] [E1] A substrate processing apparatus comprising: a chamber; a gas supply unit configured to supply a gas into the chamber; and an exhaust system configured to exhaust the gas from the chamber, wherein the exhaust system includes: a first exhaust device connected to the chamber; and a second exhaust device connected to the chamber via the first exhaust device, and the first exhaust device includes: an adsorption surface configured to adsorb gas from the chamber by cooling the adsorption surface; and a flow path through which a coolant flows for cooling the adsorption surface.

[0056] [E2] The substrate processing apparatus according to E1, further comprising a supply device connected to the flow path and configured to supply the coolant to the flow path.

[0057] [E3] The substrate processing apparatus according to E2, wherein the supply device is configured to be able to supply a heat medium to the flow path.

[0058] [E4] The substrate processing apparatus according to E2 or E3, further comprising a substrate support disposed within the chamber, wherein the supply device is further connected to a flow path within the substrate support.

[0059] [E5] The substrate processing apparatus according to E4, wherein the supply device is connected to the flow path of the first exhaust device via the flow path in the substrate support part.

[0060] [E6] The substrate processing apparatus according to any one of E2 to E5, wherein the gas supply unit is configured to supply a first gas into the chamber for processing a substrate in the chamber.

[0061] [E7] The substrate processing apparatus according to E6, wherein the gas supply unit is configured to supply a second gas different from the first gas into the chamber.

[0062] [E8] The substrate processing apparatus according to E7, further comprising a control unit configured to: (a) control the gas supply unit to supply the first gas into the chamber; (b) control the supply unit to supply the coolant to the flow path of the first exhaust device during the period (a); (c) control the gas supply unit to supply the second gas into the chamber after the substrate has been processed in the chamber during the period (a); and (d) control the second exhaust device to exhaust the gas in the chamber and the gas desorbed from the adsorption surface by evaporation during the period (c).

[0063] [E9] The substrate processing apparatus according to E8, wherein the flow rate of the first gas in (a) is greater than the flow rate of the second gas in (c).

[0064] [E10] The substrate processing apparatus according to E8 or E9, wherein the control unit is configured to control the supply device so as to adjust the temperature of the coolant supplied to the flow path of the first exhaust device in (b) to a temperature of 0°C or less.

[0065] [E11] The substrate processing apparatus according to E10, wherein the first gas contains hydrogen fluoride, and the control unit is configured to control the supply device so as to adjust the temperature of the coolant supplied to the flow path of the first exhaust device in (b) to a temperature of −70° C. or lower.

[0066] [E12] The substrate processing apparatus according to E11, wherein the first gas further contains a phosphorus-containing gas.

[0067] [E13] The substrate processing apparatus according to any one of E7 to E12, wherein the second gas is a cleaning gas for cleaning a surface inside the chamber.

[0068] [E14] The substrate processing apparatus according to any one of E6 to E13, wherein the substrate processing apparatus is a plasma processing apparatus and further includes a plasma generating unit configured to generate plasma from the first gas.

[0069] [E15] The substrate processing apparatus according to any one of E1 to E14, wherein the second exhaust device is a turbomolecular pump or a mechanical booster pump.

[0070] [E16] A method of operating a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a gas supply unit configured to supply a gas into the chamber; and an exhaust system configured to exhaust the gas from the chamber, wherein the exhaust system includes: a first exhaust unit connected to the chamber; and a second exhaust unit connected to the chamber via the first exhaust unit, wherein the first exhaust unit includes an adsorption surface configured to adsorb gas from the chamber by cooling it, and a flow path through which a coolant flows for cooling the adsorption surface, and the gas supply unit is configured to supply into the chamber a first gas for processing a substrate in the chamber and a second gas different from the first gas, the operating method comprising: (a) a step of supplying the first gas from the gas supply unit into the chamber; (b) a step of supplying the coolant to the flow path of the first exhaust unit during the period (a); and (c) a step of supplying the second gas from the gas supply unit into the chamber after the substrate has been processed in the chamber during the period (a). (d) exhausting the gas in the chamber and the gas that has been vaporized and desorbed from the adsorption surface during the period of (c) by the second exhaust device.

[0071] [E17] The method of operating a substrate processing apparatus according to E16, wherein in (b), the temperature of the coolant supplied to the flow path of the first exhaust device is 0° C. or less.

[0072] [E18] The method of operating a substrate processing apparatus according to E17, wherein the first gas contains hydrogen fluoride, and in (b), the temperature of the coolant supplied to the flow path of the first exhaust device is −70° C. or lower.

[0073] The method of operating a substrate processing apparatus according to E18, wherein the first gas further comprises a phosphorus-containing gas.

[0074] [E20] The method of operating a substrate processing apparatus according to any one of E16 to E19, wherein the second gas is a cleaning gas for cleaning a surface inside the chamber.

[0075] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims.

[0076] 1... plasma processing apparatus, 2... control unit, 10... chamber, 11... substrate support unit, 12... plasma generation unit, 41... first exhaust device, 41s... attraction surface, 41f... flow path, 42... second exhaust device, 50... supply device

Claims

1. A substrate processing apparatus comprising: a chamber; a gas supply unit configured to supply gas into the chamber; and an exhaust system configured to exhaust the gas from the chamber, wherein the exhaust system includes a first exhaust device connected to the chamber; and a second exhaust device connected to the chamber via the first exhaust device, wherein the first exhaust device includes an adsorption surface configured to adsorb gas from the chamber by cooling the adsorption surface, and a flow path through which a coolant flows for cooling the adsorption surface.

2. The substrate processing apparatus of claim 1, further comprising a supply device connected to said flow path and configured to supply said coolant to said flow path.

3. The substrate processing apparatus according to claim 2, wherein the supply device is configured to be able to supply a heat medium to the flow path.

4. The substrate processing apparatus according to claim 2, further comprising a substrate support disposed within the chamber, the supply device being further connected to a flow path within the substrate support.

5. The substrate processing apparatus according to claim 4, wherein the supply device is connected to the flow passage of the first exhaust device via the flow passage in the substrate support.

6. The substrate processing apparatus according to any one of claims 2 to 5, wherein the gas supply unit is configured to supply into the chamber a first gas for processing a substrate in the chamber.

7. The substrate processing apparatus of claim 6, wherein the gas supply is configured to supply a second gas, separate from the first gas, into the chamber.

8. The substrate processing apparatus of claim 7, further comprising a control unit configured to: (a) control the gas supply unit to supply the first gas into the chamber; (b) control the supply unit to supply the coolant to the flow path of the first exhaust device during the period (a); (c) control the gas supply unit to supply the second gas into the chamber after the substrate is processed in the chamber during the period (a); and (d) control the second exhaust device to exhaust the gas in the chamber and the gas that has desorbed from the adsorption surface by evaporation during the period (c).

9. The substrate processing apparatus according to claim 8, wherein the flow rate of the first gas in (a) is greater than the flow rate of the second gas in (c).

10. The substrate processing apparatus of claim 8, wherein the control unit is configured to control the supply device so as to adjust the temperature of the coolant supplied to the flow path of the first exhaust device in (b) to a temperature below 0°C.

11. The substrate processing apparatus of claim 10, wherein the first gas contains hydrogen fluoride, and the control unit is configured to control the supply device so as to adjust the temperature of the coolant supplied to the flow path of the first exhaust device in (b) to a temperature of -70°C or lower.

12. The substrate processing apparatus of claim 11, wherein the first gas further comprises a phosphorus-containing gas.

13. The substrate processing apparatus of claim 7, wherein the second gas is a cleaning gas for cleaning surfaces within the chamber.

14. The substrate processing apparatus according to claim 6, wherein the substrate processing apparatus is a plasma processing apparatus and further comprises a plasma generating unit configured to generate plasma from the first gas.

15. The substrate processing apparatus according to any one of claims 1 to 5, wherein the second exhaust device is a turbo molecular pump or a mechanical booster pump.

16. A method for operating a substrate processing apparatus, the substrate processing apparatus comprising: a chamber; a gas supply unit configured to supply a gas into the chamber; and an exhaust system configured to exhaust the gas from the chamber, the exhaust system including a first exhaust unit connected to the chamber; and a second exhaust unit connected to the chamber via the first exhaust unit, the first exhaust unit including an adsorption surface configured to adsorb a gas from the chamber by cooling the gas, and a flow path through which a coolant for cooling the adsorption surface flows, the gas supply unit configured to supply into the chamber a first gas for processing a substrate in the chamber and a second gas different from the first gas, the operating method comprising: (a) a step of supplying the first gas from the gas supply unit into the chamber; (b) a step of supplying the coolant to the flow path of the first exhaust unit during the period (a); and (c) a step of supplying the second gas from the gas supply unit into the chamber after the substrate has been processed in the chamber in (a); (d) exhausting, by the second exhaust device, the gas in the chamber and the gas that has been vaporized and desorbed from the adsorption surface during the period of (c).

17. The method of operating a substrate processing apparatus according to claim 16, wherein in (b), the temperature of the coolant supplied to the flow path of the first exhaust device is 0° C. or lower.

18. The method of operating a substrate processing apparatus according to claim 17, wherein the first gas contains hydrogen fluoride, and the temperature of the coolant supplied to the flow path of the first exhaust device in (b) is -70°C or lower.

19. The method of operating a substrate processing apparatus according to claim 18, wherein the first gas further comprises a phosphorus-containing gas.

20. The method of operating a substrate processing apparatus according to any one of claims 16 to 19, wherein the second gas is a cleaning gas for cleaning a surface within the chamber.

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