Semiconductor device

Abstract

A semiconductor device according to the present invention comprises at least one lead, at least one semiconductor element that is provided on one side in the thickness direction of the at least one lead, a plurality of wires that are each electrically connected to at least one of the at least one lead and the at least one semiconductor element, and a sealing resin that covers the at least one semiconductor element, the plurality of wires, and at least a portion of the at least one lead. The plurality of wires include a first wire and a second wire. The second wire is curved so as to protrude toward the first wire as seen in the thickness direction. The second wire straddles the first wire as seen in the thickness direction and is separated from the first wire in the thickness direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Various configurations have been proposed for semiconductor devices including semiconductor elements. Patent Document 1 discloses an example of a conventional semiconductor device. The semiconductor device disclosed in this document includes leads, a semiconductor element, multiple wires, and an encapsulating resin. One of the multiple wires is electrically connected to the semiconductor element. The encapsulating resin covers the semiconductor element, the multiple wires, and some of the leads. When molding the encapsulating resin, fluidized resin is injected into a cavity of a mold and then solidified. When the resin is injected, the loop shape of the wire may be deformed, causing wire sweep. When wire sweep occurs, there is a risk of contact with adjacent wires. This contact between the wires may cause problems with the electrical function of the semiconductor device.

[0003] International Publication No. 2019 / 203139

[0004] [Summary] An object of the present disclosure is to provide an improved semiconductor device compared to conventional semiconductor devices. In particular, in view of the above-mentioned circumstances, an object of the present disclosure is to provide a semiconductor device that can avoid contact between wires and properly maintain electrical functionality.

[0005] A semiconductor device provided by one aspect of the present disclosure includes one or more leads, one or more semiconductor elements arranged on one side of the one or more leads in a thickness direction, a plurality of wires each electrically connected to at least one of the one or more leads and the one or more semiconductor elements, and a sealing resin covering the one or more semiconductor elements, the plurality of wires, and at least a portion of the one or more leads. The plurality of wires include a first wire and a second wire. The second wire is curved so as to be convex toward the first wire when viewed in the thickness direction. The second wire straddles the first wire when viewed in the thickness direction and is spaced apart from the first wire in the thickness direction.

[0006] Other features and advantages of the present disclosure will become more apparent from the following detailed description taken in conjunction with the accompanying drawings.

[0007] FIG. 1 is a perspective view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 2 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 3 is a plan view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 4 is a front view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 5 is a rear view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 6 is a right side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 7 is a left side view showing a semiconductor device according to a first embodiment of the present disclosure. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a partially enlarged cross-sectional view taken along line XIII-XIII in FIG. 3. FIG. 14 is a partially enlarged cross-sectional view taken along line XIV-XIV in FIG. 3. Fig. 15 is a partially enlarged view of Fig. 3. Fig. 16 is a side view schematically showing the arrangement of the first wire and the second wire. Fig. 17 is a side view showing a modified example of the first embodiment, schematically showing the arrangement of the first wire and the second wire. Fig. 18 is a plan view schematically showing another modified example of the arrangement of the first wire and the second wire. Fig. 19 is a side view schematically showing the arrangement of the first wire and the second wire shown in Fig. 18. Fig. 20 is a plan view schematically showing another modified example of the arrangement of the first wire and the second wire. Fig. 21 is a side view schematically showing the arrangement of the first wire and the second wire shown in Fig. 20.

[0008] DETAILED DESCRIPTION Preferred embodiments of the present disclosure will now be described in detail with reference to the drawings.

[0009] Terms such as "first," "second," and "third" in this disclosure are used merely as labels and are not necessarily intended to dictate any ordering of their objects.

[0010] In this disclosure, unless otherwise specified, "a certain object A is formed on a certain object B" and "a certain object A is formed on a certain object B" include "a certain object A is formed directly on a certain object B" and "a certain object A is formed on a certain object B with another object interposed between the certain object A and the certain object B." Similarly, "a certain object A is disposed on a certain object B" and "a certain object A is disposed on a certain object B" include "a certain object A is disposed directly on a certain object B" and "a certain object A is disposed on a certain object B with another object interposed between the certain object A and the certain object B" unless otherwise specified. Similarly, "a certain object A is located on a certain object B" includes "a certain object A is located on a certain object B with a certain object A in contact with the certain object B" and "a certain object A is located on a certain object B with another object interposed between the certain object A and the certain object B." Furthermore, unless otherwise specified, the phrase "an object A overlaps an object B when viewed in a certain direction" includes "an object A overlaps the entire object B" and "an object A overlaps a part of an object B." Furthermore, in the present disclosure, "a surface A faces in (one side or the other side of) direction B" is not limited to the case where the angle of surface A with respect to direction B is 90°, but also includes the case where surface A is tilted with respect to direction B.

[0011] 1 to 16 show a semiconductor device according to a first embodiment of the present disclosure. A semiconductor device A10 of this embodiment includes a first lead 11, a second lead 12, a third lead 13, a plurality of fourth leads 14, a plurality of fifth leads 15, a plurality of sixth leads 16, a drive element 21, a control element 22, a plurality of first switching elements 31, a plurality of second switching elements 32, and a sealing resin 50. Furthermore, the semiconductor device A10 includes a plurality of wires 41, a plurality of wires 42, a plurality of wires 431, a plurality of wires 432, a plurality of wires 441, a wire 442, a plurality of wires 45, a plurality of wires 46, and a plurality of wires 47.

[0012] FIG. 1 is a perspective view showing the semiconductor device A10. FIGS. 2 and 3 are plan views showing the semiconductor device A10. In FIG. 3, for ease of understanding, the sealing resin 50 is shown in a see-through manner, and the outline of the sealing resin 50 is shown by an imaginary line (two-dot chain line). FIG. 4 is a front view showing the semiconductor device A10. FIG. 5 is a rear view showing the semiconductor device A10. FIG. 6 is a right side view showing the semiconductor device A10. FIG. 7 is a left side view showing the semiconductor device A10. FIG. 8 is a cross-sectional view taken along line VIII-VIII in FIG. 3. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 3. FIG. 10 is a cross-sectional view taken along line X-X in FIG. 3. FIG. 11 is a cross-sectional view taken along line XI-XI in FIG. 3. FIG. 12 is a cross-sectional view taken along line XII-XII in FIG. 3. FIG. 13 is a partially enlarged cross-sectional view taken along line XIII-XIII in FIG. 3. Fig. 14 is a partially enlarged cross-sectional view taken along line XIV-XIV in Fig. 3. Fig. 15 is a partially enlarged view of Fig. 3. Fig. 16 is a side view showing the arrangement of first wires 42A and second wires 45A, which will be described later.

[0013] In these figures, an example of the thickness direction in the present disclosure is referred to as the "thickness direction z." One side of the thickness direction z is referred to as the "one side of the thickness direction" in the present disclosure and as the "z1 side of the thickness direction z." The other side of the thickness direction z is referred to as the "other side of the thickness direction" in the present disclosure and as the "z2 side of the thickness direction z." A direction perpendicular to the thickness direction z is referred to as the "first direction x." "One side of the first direction x" refers to the side in the first direction x toward which the right side surface of the semiconductor device A10 faces (the side toward which FIG. 6 faces). "The other side of the first direction x" refers to the side in the first direction x toward which the left side surface of the semiconductor device A10 faces (the side toward which FIG. 7 faces). A direction perpendicular to both the thickness direction z and the first direction x is referred to as the "second direction y."

[0014] The semiconductor device A10 has a function of converting DC power into three-phase AC power by using a plurality of first switching elements 31 and a plurality of second switching elements 32. The semiconductor device A10 is used, for example, to control the drive of a brushless DC motor.

[0015] The first lead 11, the second lead 12, the third lead 13, the plurality of fourth leads 14, the plurality of fifth leads 15, and the plurality of sixth leads 16 are conductive members formed from the same lead frame. These conductive members form part of the conductive path between each functional element (the drive element 21, the control element 22, the plurality of first switching elements 31, and the plurality of second switching elements 32) and the wiring board on which the semiconductor device A10 is mounted. The constituent material of the lead frame is, for example, copper (Cu) or a copper alloy.

[0016] As shown in FIG. 3 , the first lead 11 has a mounting portion 111 , a first terminal portion 112 , a first connecting portion 113 , and a first hanging portion 114 .

[0017] As shown in Fig. 3, the mounting portion 111 extends in the first direction x. When viewed in the thickness direction z, the mounting portion 111 has a rectangular shape with long sides along the first direction x. As shown in Figs. 8 and 9, the mounting portion 111 has a main surface 111A facing the thickness direction z. In the example shown in the figures, the main surface 111A is perpendicular to the thickness direction z. The main surface 111A may be covered with, for example, a silver (Ag) plating layer.

[0018] 2 and 3 , the first terminal 112 protrudes from the sealing resin 50 to the other side in the first direction x (to the left in the drawings) when viewed in the thickness direction z. When viewed in the second direction y, the first terminal 112 is bent, for example, at two locations. The first terminal 112 is covered, for example, with a tin (Sn) plating layer or a tin-silver alloy plating layer.

[0019] 3 , the first connecting portion 113 connects the mounting portion 111 and the first terminal portion 112. The first connecting portion 113 has a region 113A that is inclined with respect to both the first direction x and the second direction y. The surface of the first connecting portion 113 (the surface facing the same side as the main surface 111A) may be covered with, for example, a silver plating layer.

[0020] As shown in FIG. 3 , the first suspending portion 114 is located on the opposite side of the mounting portion 111 from the first connecting portion 113 in the second direction y. The first suspending portion 114 extends in the second direction y. The mounting portion 111 is sandwiched between the first connecting portion 113 and the first suspending portion 114 in the second direction y. An end surface 114A of the first suspending portion 114 facing the second direction y is exposed from the sealing resin 50 (see FIG. 5 ). In FIG. 3 , the first suspending portion 114 and the first connecting portion 113 are arranged to be spaced apart to the left of a pair of second strip portions 122A, 122B (described later) of the second lead 12 (in a direction away from the first strip portion 121 of the second lead 12).

[0021] 3, the second lead 12 is spaced apart from the first lead 11 and extends along the outer edge of the lead. In the example shown in the figure, the second lead 12 is disposed substantially on one side (the right side in the figure) of the first lead 11. The second lead 12 has a first strip-shaped portion 121, a pair of second strip-shaped portions 122A and 122B, a second terminal portion 123, a second connecting portion 124, a second suspending portion 125, and a second auxiliary suspending portion 126.

[0022] 3, the first band portion 121 is located on one side of the mounting portion 111 in the first direction x (on the right side in the figure). The first band portion 121 extends in the second direction y. As shown in FIG. 9, the mounting portion 111 overlaps the first band portion 121 when viewed in the first direction x. In other words, the mounting portion 111 and the first band portion 121 are at the same (or approximately the same) height position, for example, with the bottom surface of the sealing resin 50 as the reference.

[0023] As shown in FIG. 3 , the pair of second band portions 122A, 122B extend from both ends of the first band portion 121 to the other side in the first direction x (to the left in the figure). When viewed in the thickness direction z, the first band portion 121 and each of the second band portions 122A, 122B are perpendicular to each other. At least a portion of the mounting portion 111 is located between the pair of second band portions 122A, 122B. The surfaces of the first band portion 121 and the pair of second band portions 122A, 122B may be covered with, for example, a silver plating layer.

[0024] 2 and 3, the second terminal 123 protrudes from the sealing resin 50 to the other side in the first direction x (to the left in the drawings) when viewed in the thickness direction z. As shown in FIG. 4, the second terminal 123 is bent, for example, at two locations when viewed in the second direction y. The second terminal 123 is located adjacent to the first terminal 112 in the second direction y. The second terminal 123 is covered with a tin plating layer, a tin-silver alloy plating layer, or the like.

[0025] As shown in Fig. 3, the second connecting portion 124 connects the second band-shaped portion 122A and the second terminal portion 123. The second connecting portion 124 is located on the other side of the pair of second band-shaped portions 122A, 122B in the first direction x (on the left side in the figure). In addition, the second connecting portion 124 is located adjacent to the first connecting portion 113 in the second direction y. The second connecting portion 124 has a region 124A that is inclined with respect to both the first direction x and the second direction y. The surface of the second connecting portion 124 may be covered with, for example, a silver plating layer.

[0026] 3, the second suspending portion 125 extends from the second band-shaped portion 122B in the second direction y. In the first direction x, at least a portion of the second suspending portion 125 is located to the left of the pair of second band-shaped portions 122A, 122B. In addition, in the first direction x, the second suspending portion 125 is located adjacent to the first suspending portion 114. An end surface 125A of the second suspending portion 125 facing the second direction y is exposed from the sealing resin 50 (see FIG. 5).

[0027] 3, the second connecting portion 124 has a portion extending parallel to the first direction x, and the second auxiliary suspending portion 126 extends from this portion in the second direction y. An end surface 126A of the second auxiliary suspending portion 126 facing the second direction y is exposed from the sealing resin 50 (see FIG. 4).

[0028] 3, the third lead 13 is disposed on one side in the first direction x (on the right side in the figure) of the second lead 12. The third lead 13 has a plurality of first pad portions 130, a third terminal portion 132, a third connecting portion 133, a third suspending portion 134, and a third auxiliary suspending portion 135. In the example shown in the figure, three first pad portions 130 are provided.

[0029] As shown in Fig. 3, a plurality of first switching elements 31 are electrically connected to the plurality of first pad portions 130, respectively. As shown in Figs. 8, 9, and 13, each of the plurality of first pad portions 130 has a main surface 130A facing upward (the direction in which the main surface 111A of the mounting portion 111 faces in the thickness direction z). The main surface 130A may be covered with, for example, a silver plating layer. The plurality of first pad portions 130 include a plurality of regions. In the example shown in Fig. 3, a first region 131A, a second region 131B, and a third region 131C are provided.

[0030] As shown in FIG. 3 , the first region 131A is disposed near the second suspending portion 125. At least a portion of the first region 131A is located adjacent to the second suspending portion 125 in the first direction x. Furthermore, the first region 131A is located adjacent to the second strip-shaped portion 122B in the second direction y. As shown in FIGS. 3 and 9 , the first region 131A is provided with a pair of holes 130B penetrating in the thickness direction z. The pair of holes 130B are disposed spaced apart from each other in the second direction y, sandwiching the first switching element 31 therebetween. As shown in FIGS. 3 and 13 , the first region 131A is formed with a plurality of grooves 130C recessed from the main surface 130A. The plurality of grooves 130C are disposed spaced apart from each other around the periphery of the first switching element 31. The plurality of grooves 130C can be formed, for example, by V-notch processing. Similarly to the other grooves (described later), the grooves 130C have the function of blocking the solder used to join the first switching element 31 to the first region 131A.

[0031] 3, the second region 131B is located adjacent to the first strip portion 121 of the second lead 12 in the first direction x. A groove portion 130C is formed in the second region 131B. The groove portion 130C is located on one side of the first switching element 31 in the first direction x (on the right side in the drawing).

[0032] 3, the third region 131C is located adjacent to the second connecting portion 124 of the second lead 12 in the first direction x. The third region 131C is also located adjacent to the second strip portion 122A of the second lead 12 in the second direction y. A groove 130C is formed in the third region 131C. The groove 130C is located on the other side of the first switching element 31 in the first direction x (on the left side in the drawing).

[0033] 2 and 3, the third terminal 132 protrudes from the sealing resin 50 to one side in the first direction x (to the right in the figures) when viewed in the thickness direction z. The third terminal 132 is bent when viewed in the second direction y as shown in Fig. 5. The third terminal 132 is covered with a tin plating layer, a tin-silver alloy plating layer, or the like.

[0034] 3, the third connecting portion 133 interconnects the plurality of first pad portions 130 and the third terminal portions 132. The third connecting portion 133 includes an outer connecting portion 133A, a first inner connecting portion 133B, and a second inner connecting portion 133C.

[0035] 3, the outer coupling portion 133A couples the first region 131A and the third terminal portion 132. The outer coupling portion 133A extends in the first direction x.

[0036] 3, the first inner connecting portion 133B connects the first region 131A and the second region 131B. A groove 133D is provided at the end of the first inner connecting portion 133B that connects to the second region 131B. The groove 133D is recessed from the surface of the third connecting portion 133. The groove 133D is formed by the same method as the groove 130C described above.

[0037] 3, the second inner coupling portion 133C couples the second region 131B and the third region 131C. Grooves 133D are formed in the end of the second inner coupling portion 133C that couples to the third region 131C and the end of the second inner coupling portion 133C that couples to the second region 131B.

[0038] As shown in FIG. 3, a portion of the second region 131B protrudes from both the first inner connecting portion 133B and the second inner connecting portion 133C to one side in the first direction x (to the right in the drawing).

[0039] As shown in FIG. 3, the third hanging portion 134 extends in the second direction y from the third region 131C. An end surface 134A of the third hanging portion 134 facing the second direction y is exposed from the sealing resin 50 (see FIG. 4). The end surface 134A has a pair of regions spaced apart from each other in the first direction x. A plurality of grooves 134B are formed at the end of the third hanging portion 134 connected to the third region 131C. The plurality of grooves 134B are recessed from the surface of the third hanging portion 134. The plurality of grooves 134B are formed using the same method as the plurality of grooves 130C.

[0040] 3, the third auxiliary suspending portion 135 extends in the second direction y from the outer connecting portion 133A. An end surface 135A of the third auxiliary suspending portion 135 facing the second direction y is exposed from the sealing resin 50 (see FIG. 5).

[0041] 10, the first band-shaped portion 121 overlaps the second region 131B, the first inner connecting portion 133B, and the second inner connecting portion 133C when viewed in the first direction x. As shown in Fig. 3, a portion of each of the pair of second band-shaped portions 122A, 122B is located between the first inner connecting portion 133B and the second inner connecting portion 133C.

[0042] 3, the multiple fourth leads 14 are located on one side in the first direction x (on the right side in the drawing) of the third lead 13. Each of the multiple fourth leads 14 has a second pad portion 141 and a fourth terminal portion 142.

[0043] 3, the second switching element 32 is electrically connected to each second pad 141. The second pad 141 has a main surface 141A facing upward (the direction in which the main surface 111A of the mounting portion 111 faces in the thickness direction z). The main surface 141A may be covered with, for example, a silver plating layer.

[0044] 2 and 3, each fourth terminal 142 protrudes from the sealing resin 50 to one side in the first direction x (to the right in the drawings) when viewed in the thickness direction z. Each fourth terminal 142 is connected to a corresponding second pad 141. The multiple fourth terminals 142 are arranged in the second direction y together with the third terminals 132. Like the first to third terminals, each fourth terminal 142 is bent when viewed in the second direction y (see FIGS. 4 and 5). Each fourth terminal 142 is covered with a tin plating layer, a tin-silver alloy plating layer, or the like.

[0045] As shown in FIG. 3, the plurality of fourth leads 14 include a U-phase lead 14A, a V-phase lead 14B, and a W-phase lead 14C.

[0046] As shown in FIG. 11 , a portion of the second pad portion 141 of the U-phase lead 14A overlaps the first region 131A when viewed in the first direction x. A portion of the second pad portion 141 of the U-phase lead 14A is located between the outer coupling portion 133A and the first inner coupling portion 133B. As shown in FIGS. 3 and 12 , the second pad portion 141 of the U-phase lead 14A has a hole 141B penetrating in the thickness direction z. The hole 141B is located on one side of the second switching element 32 in the first direction x (on the right side in the drawing). As shown in FIGS. 3 and 14 , the second pad portion 141 of the U-phase lead 14A has a plurality of grooves 141C recessed from the main surface 141A. These grooves 141C are located around the second switching element 32. The grooves 141C are formed using the same method as the grooves 130C.

[0047] 3, the second pad portion 141 of the V-phase lead 14B is located adjacent to the second inner coupling portion 133C in the first direction x. A plurality of grooves 141C are formed in the second pad portion 141 of the V-phase lead 14B. These grooves 141C are located around the second switching element 32.

[0048] 3, the second pad portion 141 of the W-phase lead 14C is located adjacent to both the third region 131C and the third hanging portion 134 in the first direction x. The second pad portion 141 of the W-phase lead 14C is located adjacent to the second inner coupling portion 133C in the second direction y. A plurality of grooves 141C are formed in the second pad portion 141 of the W-phase lead 14C. These grooves 141C are located around the second switching element 32.

[0049] 3, the plurality of fifth leads 15 are located on one side in the first direction x (on the right side in the figure) of the third lead 13. Each of the plurality of fifth leads 15 is located adjacent to the corresponding fourth lead 14 in the second direction y. Each fifth lead 15 has a connection portion 151 and a fifth terminal portion 152.

[0050] 3, at least a portion of each connection portion 151 is located adjacent to the second pad portion 141 in the second direction y. A surface of each connection portion 151 (the surface facing the main surface 111A of the mounting portion 111 in the thickness direction z) may be covered with, for example, a silver plating layer.

[0051] 2 and 3 , each fifth terminal 152 protrudes from the sealing resin 50 to one side in the first direction x (to the right in the drawings) when viewed in the thickness direction z. Each fifth terminal 152 is connected to a corresponding connection portion 151. The plurality of fifth terminals 152 are arranged in the second direction y together with the third terminal 132 and the plurality of fourth terminals 142. Like the first to fourth terminals, each fifth terminal 152 is bent when viewed in the second direction y. Each fifth terminal 152 is covered with a tin plating layer, a tin-silver alloy plating layer, or the like.

[0052] 3, the sixth leads 16 are located on the other side in the first direction x (on the left side in the drawing) of the first leads 11. Each sixth lead 16 has a connection portion 161 and a sixth terminal portion 162.

[0053] 3, the mounting portion 111 has a portion that protrudes to the other side in the first direction x (to the left in the figure) relative to the region 113A of the first coupling portion 113 and the first suspending portion 114. The multiple connection portions 161 are spaced apart from one another along a substantially arc-shaped curve (or broken line), and are arranged so as to face the protruding portion of the mounting portion 111. The surface of each connection portion 161 may be covered with, for example, a silver plating layer.

[0054] 2 and 3 , each sixth terminal portion 162 protrudes from the sealing resin 50 to the other side in the first direction x (to the left in the drawings) when viewed in the thickness direction z. Each sixth terminal portion 162 is connected to a corresponding connection portion 161. The multiple sixth terminal portions 162 are arranged in the second direction y together with the first terminal portions 112 and the second terminal portions 123. Like the other terminal portions, each sixth terminal portion 162 is bent when viewed in the second direction y as shown in FIG. 5 . The sixth terminal portion 162 is covered with a tin plating layer, a tin-silver alloy plating layer, or the like.

[0055] As shown in FIGS. 3 , 8 , and 9 , the drive element 21 is mounted on the mounting portion 111. As shown in FIGS. 8 and 9 , the drive element 21 is bonded to the main surface 111A of the mounting portion 111 by a bonding layer 29. The bonding layer 29 is, for example, a silver paste mainly composed of epoxy resin. The drive element 21 outputs a gate voltage for driving the first switching elements 31 and the second switching elements 32. In the semiconductor device A10, the drive element 21 has a strip shape extending in the first direction x when viewed in the thickness direction z. A plurality of electrodes 21A are provided on the upper surface (the surface on the z1 side in the thickness direction z) of the drive element 21. Some of the electrodes 21A are individually electrically connected to the first switching elements 31 and the second switching elements 32. The remaining electrodes 21A are individually electrically connected to the first lead 11, the fifth leads 15, and the sixth lead 16. Each electrode 21A is made of, for example, aluminum (Al). The dimension of the driving element 21 in the thickness direction z is not particularly limited, but is, for example, about 400 μm.

[0056] As shown in FIGS. 3 and 8 , the control element 22 is mounted on the mounting portion 111 and is located on the other side of the drive element 21 in the first direction x (on the left side in the drawings). The control element 22 is bonded to the main surface 111A of the mounting portion 111 by a bonding layer 29. The control element 22 controls the drive element 21. A plurality of electrodes 22A are provided on the upper surface (the surface on the z1 side in the thickness direction z) of the control element 22. Some of the plurality of electrodes 22A are individually electrically connected to some of the plurality of electrodes 21A of the drive element 21. The remaining plurality of electrodes 22A are electrically connected to the first lead 11 and the plurality of sixth leads 16. The plurality of electrodes 22A are made of a material such as aluminum.

[0057] As shown in FIGS. 3 , 8 , and 9 , the multiple first switching elements 31 are individually and electrically connected to the main surfaces 130A of the multiple first pad portions 130 (third leads 13). As a result, in the semiconductor device A10, the first switching elements 31 are electrically connected to the first region 131A, the second region 131B, and the third region 131C, respectively. The multiple first switching elements 31 are individually electrically connected to the multiple second pad portions 141 (fourth leads 14). The multiple first switching elements 31 are MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) primarily composed of silicon (Si) or silicon carbide (SiC). Note that the multiple first switching elements 31 may be semiconductor elements other than MOSFETs. In the semiconductor device A10, a case will be described in which the first switching elements 31 are n-channel MOSFETs. 13 , each first switching element 31 has a first element main surface 31A, a first element back surface 31B, a first main surface electrode 311, a first back surface electrode 312, and a first gate electrode 313. The first element main surface 31A and the first element back surface 31B face opposite each other in the thickness direction z. The first element main surface 31A faces the z1 side in the thickness direction z, and the first element back surface 31B faces the z2 side in the thickness direction z.

[0058] 3 and 13, the first principal surface electrode 311 is provided on the first element principal surface 31 A. The first principal surface electrode 311 is the source electrode of the first switching element 31.

[0059] 13, the first back surface electrode 312 is provided so as to cover the entire first element back surface 31 B. The first back surface electrode 312 is a drain electrode of the first switching element 31.

[0060] 3 and 13 , the first gate electrode 313 is provided on the first element main surface 31A. The first gate electrode 313 is the gate electrode of the first switching element 31. When viewed in the thickness direction z, the area of ​​the first gate electrode 313 is smaller than the area of ​​the first main surface electrode 311. The dimensions of the first switching element 31 and a second switching element 32 (described later) in the thickness direction z are not particularly limited, but are, for example, approximately 270 μm.

[0061] As shown in FIGS. 3 , 10 , and 12 , the second switching elements 32 are individually and electrically connected to the main surfaces 141A of the second pad portions 141 (fourth leads 14). As a result, in the semiconductor device A10, the second switching elements 32 are electrically connected to the U-phase lead 14A, the V-phase lead 14B, and the W-phase lead 14C, respectively. The second switching elements 32 are electrically connected to the second leads 12. The second switching elements 32 are the same semiconductor elements as the first switching elements 31. As shown in FIG. 14 , each second switching element 32 has a second element main surface 32A, a second element back surface 32B, a second main surface electrode 321, a second back surface electrode 322, and a second gate electrode 323. The second element main surface 32A and the second element back surface 32B face opposite each other in the thickness direction z. The second element main surface 32A faces the z1 side in the thickness direction z, and the second element back surface 32B faces the z2 side in the thickness direction z.

[0062] 3 and 14, the second principal surface electrode 321 is provided on the second element principal surface 32 A. The second principal surface electrode 321 is the source electrode of the second switching element 32 .

[0063] 14, the second back surface electrode 322 is provided so as to cover the entire second element back surface 32 B. The second back surface electrode 322 is the drain electrode of the second switching element 32.

[0064] 3 and 14 , the second gate electrode 323 is provided on the second element main surface 32A. The second gate electrode 323 is the gate electrode of the second switching element 32. When viewed in the thickness direction z, the area of ​​the second gate electrode 323 is smaller than the area of ​​the second main surface electrode 321.

[0065] As shown in FIGS. 8 to 14 , the semiconductor device A10 includes a plurality of conductive bonding layers 39. Some of the conductive bonding layers 39 are individually interposed between the main surfaces 130A of the plurality of first pad portions 130 and the first back electrodes 312 of the plurality of first switching elements 31. The remaining conductive bonding layers 39 are individually interposed between the main surfaces 141A of the plurality of second pad portions 141 and the second back electrodes 322 of the plurality of second switching elements 32. The plurality of first switching elements 31 are individually and electrically bonded to the plurality of main surfaces 130A by the plurality of conductive bonding layers 39. As a result, the plurality of first back electrodes 312 are electrically connected to the third lead 13. The plurality of second switching elements 32 are individually and electrically bonded to the plurality of main surfaces 141A by the plurality of conductive bonding layers 39. As a result, the plurality of second back electrodes 322 are electrically connected to the plurality of fourth leads 14. The plurality of conductive bonding layers 39 are made of, for example, lead-free solder containing tin as a main component.

[0066] 3 , the plurality of wires 41 are individually connected to the first principal surface electrodes 311 of the plurality of first switching elements 31 and to the plurality of second pad portions 141. The plurality of wires 41 individually connect the plurality of fourth leads 14 to the plurality of first switching elements 31. The plurality of wires 41 are made of a material such as gold (Au), copper, silver, and aluminum.

[0067] 3, the wires 42 are individually connected to the second principal surface electrodes 321 of the second switching elements 32 and the second lead 12 (the pair of second strip portions 122A, 122B). The second switching elements 32 are electrically connected to the second lead 12 by the wires 42. The wires 42 are made of, for example, gold, copper, silver, and aluminum.

[0068] 3, the plurality of wires 431, the plurality of wires 432, the plurality of wires 441, the wires 442, and the plurality of wires 45 are all individually connected to the plurality of electrodes 21A of the driving element 21. The plurality of wires 46 and the plurality of wires 47 are individually connected to the electrodes 21A of the driving element 21 or the electrodes 22A of the control element 22. The constituent materials of these wires are, for example, gold, copper, silver, and aluminum.

[0069] The following describes a case where the constituent materials of the plurality of wires 41, 42, 431, 432, 441, 442, 45, 46, and 47 are all gold. In this case, the diameters of the plurality of wires 41, 42, 431, 432, 441, 442, 45, 46, and 47 are the same (or approximately the same). Unlike the above configuration, if all the wires are made of aluminum, the diameters of the plurality of wires 41 and 42 are larger than the diameters of the plurality of wires 431, 432, 441, 442, 45, 46, and 47. This is because, in the semiconductor device A10, the current flowing through the plurality of wires 41 and 42 is larger than the current flowing through the other wires. Furthermore, in the semiconductor device A10, the wires may be made of not only one type of material but also a plurality of types of material.

[0070] 3 , the plurality of wires 431 are individually connected to the plurality of electrodes 21A of the driving element 21 and the first gate electrodes 313 of the plurality of first switching elements 31. The plurality of wires 431 electrically connect the plurality of first gate electrodes 313 to the driving element 21. The gate voltage output from the driving element 21 is individually applied to the plurality of first gate electrodes 313 via the plurality of wires 431.

[0071] 3 , the plurality of wires 432 are individually connected to the plurality of electrodes 21A of the driving element 21 and the second gate electrodes 323 of the plurality of second switching elements 32. The plurality of wires 432 electrically connect the plurality of second gate electrodes 323 to the driving element 21. The gate voltage output from the driving element 21 is individually applied to the plurality of second gate electrodes 323 via the plurality of wires 432.

[0072] As shown in FIG. 3 , the plurality of wires 441 are individually connected to the plurality of electrodes 21A of the drive element 21 and the first principal surface electrodes 311 of the plurality of first switching elements 31. The plurality of first principal surface electrodes 311 are electrically connected to the drive element 21 via the plurality of wires 441. The plurality of first principal surface electrodes 311 are individually electrically connected to the plurality of fourth leads 14. The negative potential of a gate power supply that generates a gate voltage for driving the plurality of first switching elements 31 is different for each of the plurality of first switching elements 31. Furthermore, the gate voltage is required to be higher than the gate voltage for driving the plurality of second switching elements 32. For this reason, the gate power supply that generates the gate voltage includes a plurality of capacitors that are electrically connected to the semiconductor device A10. The plurality of capacitors individually correspond to the plurality of first switching elements 31. The negative potential of each of the plurality of capacitors is transmitted to the drive element 21 via the corresponding wire 441.

[0073] 3 , the wire 442 is connected to the electrode 22A of the control element 22 and the second lead 12. The second principal surface electrodes 321 of the plurality of second switching elements 32 are electrically connected to the control element 22 via the plurality of wires 42, the second lead 12, and the wire 442. The wire 442 transmits the potential at the second principal surface electrodes 321 of the plurality of second switching elements 32 to the control element 22. Furthermore, the source current flowing from the plurality of second switching elements 32 is detected in the control element 22 via the wire 442.

[0074] 3, the plurality of wires 45 are individually connected to the plurality of electrodes 21A of the driving element 21 and the plurality of connection portions 151. The plurality of fifth leads 15 are electrically connected to the driving element 21 via the plurality of wires 45.

[0075] 3, there are four wires 46. One wire 46 is connected to the electrode 21A of the driving element 21 and the first connecting portion 113. The other three wires 46 are connected to the electrode 22A of the control element 22 and the first connecting portion 113. As a result, the first lead 11 is electrically connected to both the driving element 21 and the control element 22 via the wires 46.

[0076] 3, the wires 47 can be classified into three groups according to the objects to be connected. Each wire 47 in the first group connects one electrode 22A of the control element 22 to a corresponding connection portion 161. Each wire 47 in the second group connects one electrode 22A of the control element 22 to a corresponding electrode 21A of the drive element 21. Each wire 47 in the third group connects one electrode 21A of the drive element 21 to a corresponding connection portion 161.

[0077] As shown in Fig. 3, the sealing resin 50 covers a portion of each of the first lead 11, the second lead 12, the third lead 13, the plurality of fourth leads 14, the plurality of fifth leads 15, and the plurality of sixth leads 16. As shown in Fig. 3, the sealing resin 50 covers the drive element 21, the control element 22, the plurality of first switching elements 31, and the plurality of second switching elements 32. The constituent material of the sealing resin 50 is, for example, black epoxy resin. As shown in Figs. 2 and 4 to 7, the sealing resin 50 has a pair of first side surfaces 51A, 51B and a pair of second side surfaces 52A, 52B.

[0078] As shown in Figures 2, 6, and 7, the pair of first side surfaces 51A, 51B are spaced apart from each other in the first direction x. The first side surface 51A faces one side in the first direction x (the right side in Figure 2), and the first side surface 51B faces the other side in the first direction x (the left side in Figure 2). The third terminal 132, the plurality of fourth terminals 142, and the plurality of fifth terminals 152 protrude from the first side surface 51A to one side in the first direction x (the right side in Figure 2) when viewed in the thickness direction z. Meanwhile, the first terminal 112, the second terminal 123, and the plurality of sixth terminals 162 protrude from the first side surface 51B to the other side in the first direction x (the left side in Figure 2) when viewed in the thickness direction z.

[0079] As shown in Figures 2, 4, and 5, the pair of second side surfaces 52A, 52B are spaced apart from each other in the second direction y. In Figure 2, the second side surface 52A faces upward, and the second side surface 52B faces downward. As shown in Figure 5, an end surface 114A of the first suspending portion 114, an end surface 125A of the second suspending portion 125, and an end surface 135A of the third auxiliary suspending portion 135 are exposed from the second side surface 52A. As shown in Figure 4, an end surface 126A of the second auxiliary suspending portion 126, an end surface 134A of the third suspending portion 134, and an end surface 141D of the second pad portion 141 (W-phase lead 14C) are exposed from the second side surface 52B.

[0080] During the manufacturing of the semiconductor device A10, when molding the sealing resin 50, fluidized resin is injected into a mold cavity and solidified. During resin injection, the loop shape of the wires may be deformed, resulting in wire sweep. During the manufacturing of the semiconductor device A10, the resin flows from the upper side (one side in the second direction y) to the lower side (the other side in the second direction y) in FIG. 3 . This may result in wire sweep in each of the wires 41, 42, 431, 432, 441, 442, 45, 46, and 47. After wire bonding, each wire becomes straight as viewed in the thickness direction z. After molding the sealing resin 50, if wire sweep occurs, the wire bends downward as viewed in the thickness direction z in FIG. 3 . The degree to which the loop shape of the wires is deformed by resin injection depends on the length of the wires and their orientation as viewed in the thickness direction z. As the overall length of the wire increases, wire sweep becomes more likely to occur.

[0081] As shown in FIGS. 3, 15, and 16, in the semiconductor device A10, the plurality of wires 42 include one first wire 42A. The plurality of wires 45 include one second wire 45A. The first wire 42A and the second wire 45A are adjacent to each other. Note that FIG. 16 is a side view schematically showing the arrangement of the first wire 42A and the second wire 45A. For ease of understanding, FIG. 16 shows the sealing resin 50 through which light passes. In FIG. 16, the through sealing resin 50 is shown by imaginary lines.

[0082] The first wire 42A has a first end 421 and a second end 422. The first end 421 is located at one end of the first wire 42A and is joined to the z1 side of the second switching element 32 in the thickness direction z (the second main surface electrode 321 of the second element main surface 32A). The second end 422 is located at the other end of the first wire 42A and is joined to the second strip portion 122A of the second lead 12. As shown in FIG. 16 , the first end 421 is located above the second end 422 (the z1 side in the thickness direction z). The first end 421 is a first bonding portion, and the first wire 42A has a loop shape that rises from the first end 421 and gradually slopes down toward the second end 422. The second switching element 32 to which the first end 421 is joined corresponds to an example of a “first element” in the present disclosure.

[0083] The second wire 45A has a third end 451 and a fourth end 452. The third end 451 is located at one end of the second wire 45A and is joined to the electrode 21A on the z1 side in the thickness direction z of the driving element 21. The fourth end 452 is located at the other end of the second wire 45A and is joined to the connection portion 151 of the fifth lead 15. As shown in FIG. 16 , the third end 451 is located above (on the z1 side in the thickness direction z) the fourth end 452. The third end 451 is a first bonding portion, and the second wire 45A has a loop shape that rises from the third end 451 and gradually descends toward the fourth end 452. The driving element 21 to which the third end 451 is joined corresponds to an example of a “second element” in the present disclosure.

[0084] In this embodiment, the overall length of the second wire 45A is longer than the overall length of the first wire 42A. As shown in Fig. 15, the third end 451 of the second wire 45A is closer to the second end 422 of the first wire 42A than the first end 421 of the first wire 42A. The fourth end 452 of the second wire 45A is closer to the first end 421 of the first wire 42A than the second end 422 of the first wire 42A.

[0085] 15 , due to wire sweep, the second wire 45A is curved so as to be convex toward the first wire 42A as viewed in the thickness direction z. The second wire 45A straddles the first wire 42A as viewed in the thickness direction z. In the illustrated example, the second wire 45A straddles the first end 421 of the first wire 42A. Meanwhile, as viewed in the thickness direction z, the line segment s1 connecting the third end 451 and the fourth end 452 does not intersect with the first wire 42A. Therefore, before the molding of the sealing resin 50, the second wire 45A does not intersect with the first wire 42A as viewed in the thickness direction z.

[0086] As described above, the second wire 45A straddles the first wire 42A in the thickness direction z. Meanwhile, as shown in FIG. 16 , the second wire 45A is spaced apart from the first wire 42A in the thickness direction z. In FIG. 16 , the first wire 42A and the second wire 45A before the molding of the sealing resin 50 are represented by two-dot chain lines. After the molding of the sealing resin 50, wire sweep occurs, displacing the first wire 42A and the second wire 45A toward the z2 side in the thickness direction z compared to before the molding of the sealing resin 50. The first wire 42A and the second wire 45A after the molding of the sealing resin 50 are represented by solid lines. Even if the second wire 45A is bent convexly toward the first wire 42A as viewed in the thickness direction z due to wire sweep, the second wire 45A remains spaced apart from the first wire 42A in the thickness direction z, as shown in FIG. 16 . 16, the region surrounded by the dotted line is a portion where wire sweep may occur, causing the second wire 45A to cross over the first wire 42A as viewed in the thickness direction z. As can be seen from Figures 15 and 16, in the portion where the second wire 45A may cross over the first wire 42A as viewed in the thickness direction z, the second wire 45A is sufficiently separated from the first wire 42A in the thickness direction z.

[0087] 16 , in this embodiment, the dimension of the drive element 21 in the thickness direction z is larger than the dimension of the second switching element 32 in the thickness direction z. As a result, the third end 451 joined to the z1 side of the drive element 21 in the thickness direction z is located closer to the z1 side in the thickness direction z than the first end 421 joined to the z1 side of the second switching element 32 in the thickness direction z.

[0088] In the semiconductor device A10, DC power for driving a motor to be controlled is input to the third terminal 132. The current of the DC power input to the third terminal 132 flows through the first switching elements 31, the wires 41, the second switching elements 32, and the wires 42 in this order, and is output from the second terminal 123.

[0089] The DC power input to the semiconductor device A10 is converted into three-phase AC power of U-phase, V-phase, and W-phase by driving the plurality of first switching elements 31 and the plurality of second switching elements 32. The U-phase AC power is output from the fourth terminal 142 of the U-phase lead 14A. The V-phase AC power is output from the fourth terminal 142 of the V-phase lead 14B. The W-phase AC power is output from the fourth terminal 142 of the W-phase lead 14C. The three-phase AC power output from these fourth terminals 142 drives and controls the motor.

[0090] Next, the effects of the semiconductor device A10 will be described.

[0091] In this embodiment, the second wire 45A is curved so as to be convex toward the first wire 42A when viewed in the thickness direction z. The second wire 45A straddles the first wire 42A when viewed in the thickness direction z. The second wire 45A is also spaced apart from the first wire 42A in the thickness direction z. With this configuration, even if the second wire 45A sweeps during molding of the sealing resin 50, contact between the adjacent first wire 42A and second wire 45A can be avoided. This allows the electrical function of the semiconductor device A10 to be properly maintained.

[0092] The first end 421 of the first wire 42A is joined to the z1 side of the second switching element 32 (first element) in the thickness direction z. The third end 451 of the second wire 45A is joined to the z1 side of the driving element 21 (second element) in the thickness direction z. The third end 451 of the second wire 45A is located closer to the second end 422 of the first wire 42A than the first end 421 of the first wire 42A. The fourth end 452 of the second wire 45A is located closer to the first end 421 than the second end 422 of the first wire 42A. With this configuration, as shown in FIG. 16 , the loop directions of adjacent first and second wires 42A and 45A are opposite to each other. Therefore, in the portion where the second wire 45A can straddle the first wire 42A as viewed in the thickness direction z, the second wire 45A can be spaced a sufficient distance from the first wire 42A in the thickness direction z. Therefore, it is possible to more reliably prevent improper contact between the first wire 42A and the second wire 45A.

[0093] The third end 451 joined to the z1 side in the thickness direction z of the driving element 21 is located on the z1 side in the thickness direction z of the first end 421 joined to the z1 side in the thickness direction z of the second switching element 32. With this configuration, the second wire 45A straddling the first wire 42A as viewed in the thickness direction z can be spaced a greater distance from the first wire 42A in the thickness direction z.

[0094] First Modification of First Embodiment: FIG. 17 shows a semiconductor device according to a first modification of the first embodiment. FIG. 17 shows a semiconductor device A11 according to this modification, and is a side view schematically illustrating the arrangement of first wires 42A and second wires 45A. For ease of understanding, FIG. 17 shows the sealing resin 50 through which the view is seen. In FIG. 17 and subsequent figures, elements that are the same as or similar to those in the semiconductor device A10 of the above embodiment are given the same reference numerals as those in the above embodiment, and descriptions thereof will be omitted where appropriate.

[0095] 17, the main difference is the shape of the second wire 45A. Although not shown, the first wire 42A and the second wire 45A of this modification have the same shapes as those in FIG. 15 when viewed in the thickness direction z. Therefore, the second wire 45A is curved so as to be convex toward the side of the first wire 42A when viewed in the thickness direction z due to wire sweep.

[0096] In this modification, the second wire 45A has a first bent portion 453, a second bent portion 454, a first section 455, and a second section 456. The first bent portion 453 is located near the third end 451, and the second bent portion 454 is located near the fourth end 452. The first section 455 is the section between the first bent portion 453 and the second bent portion 454, and the second section 456 is the section between the second bent portion 454 and the fourth end 452. When viewed in the thickness direction z, the first section 455 straddles the first wire 42A. The first bent portion 453 and the second bent portion 454 are formed, for example, by providing a bending point in the operation of a bonding tool during wire bonding of the second wire 45A. In FIG. 17 , the area surrounded by a dotted line is a portion where the second wire 45A may straddle the first wire 42A when viewed in the thickness direction z due to wire sweep.

[0097] In this modification, the second wire 45A is curved so as to be convex toward the first wire 42A when viewed in the thickness direction z. The second wire 45A straddles the first wire 42A when viewed in the thickness direction z. The second wire 45A is also spaced apart from the first wire 42A in the thickness direction z. Even in this modification, even if wire sweep occurs in the second wire 45A during molding of the sealing resin 50, contact between the adjacent first and second wires 42A and 45A can be avoided. Furthermore, in the modification shown in FIG. 17 , the first section 455 straddles the first wire 42A. This allows the second wire 45A to be spaced a sufficient distance from the first wire 42A in the thickness direction z in the portion where the second wire 45A may straddle the first wire 42A when viewed in the thickness direction z. Therefore, improper contact between the first wire 42A and the second wire 45A can be more reliably prevented. In addition, the semiconductor device A11 exhibits the same effects as the semiconductor device A10 within the scope of the same configuration as the semiconductor device A10 of the above embodiment.

[0098] Other Modified Arrangements of the First Wire and the Second Wire: FIGS. 18 to 21 show other modified arrangements of the first wire and the second wire. FIG. 18 is a plan view schematically showing a modified arrangement (first example) of the first wire and the second wire. FIG. 19 is a side view schematically showing the arrangement of the first wire and the second wire shown in FIG. 18. FIG. 20 is a plan view schematically showing a modified arrangement (second example) of the first wire and the second wire. FIG. 21 is a side view schematically showing the arrangement of the first wire and the second wire shown in FIG. 20. The sealing resin 50 is omitted in FIGS. 18 and 20. For ease of understanding, the sealing resin 50 is shown in perspective in FIGS. 19 and 21. The penetrated sealing resin 50 is shown by imaginary lines in FIGS. 19 and 21.

[0099] 18 to 21, the package structure of the semiconductor device is not limited in any way. Furthermore, the type of each of the semiconductor elements 25, 26, 35, and 36 described below is not limited in any way, and may be, for example, a switching element such as a MOSFET, a driving element or control element such as an IC or LSI, or a diode.

[0100] 18 and 19, a first wire 48A and a second wire 49A are arranged. The first wire 48A and the second wire 49A are curved so as to be convex downward in FIG. 18 due to wire sweep occurring during molding of the sealing resin 50.

[0101] The first wire 48A has a first end 481 and a second end 482. The first end 481 is joined to the z1 side of the semiconductor element 35 in the thickness direction z. The semiconductor element 35 is mounted on the z1 side of the lead 17B in the thickness direction z. The second end 482 is joined to the z1 side of the lead 18B in the thickness direction z. The semiconductor element 35 corresponds to an example of a "first element" in the present disclosure.

[0102] The second wire 49A has a third end 491 and a fourth end 492. The third end 491 is joined to the z1 side of the semiconductor element 25 in the thickness direction z. The semiconductor element 25 is mounted on the z1 side of the lead 17A in the thickness direction z. The fourth end 492 is joined to the z1 side of the lead 18A in the thickness direction z. The semiconductor element 25 corresponds to an example of a "second element" in the present disclosure. In the example shown in FIGS. 18 and 19 , the total length of the second wire 49A is shorter than the total length of the first wire 48A. The third end 491 joined to the z1 side of the semiconductor element 25 in the thickness direction z is located closer to the z1 side in the thickness direction z than the first end 481 joined to the z1 side of the semiconductor element 25 in the thickness direction z.

[0103] 18 , due to wire sweep, the second wire 49A is curved so as to be convex toward the first wire 48A as viewed in the thickness direction z. The second wire 49A straddles the first wire 48A as viewed in the thickness direction z. In the illustrated example, the second wire 49A straddles the second end 482 of the first wire 48A. Meanwhile, as viewed in the thickness direction z, the line segment s2 connecting the third end 491 and the fourth end 492 does not intersect with the first wire 48A. Therefore, before the molding of the sealing resin 50, the second wire 49A does not intersect with the first wire 48A as viewed in the thickness direction z.

[0104] 19, the region surrounded by the dotted line is a portion where wire sweep occurs, causing the second wire 49A to cross over the first wire 48A as viewed in the thickness direction z. As can be seen from Figures 18 and 19, in the portion where the second wire 49A may cross over the first wire 48A as viewed in the thickness direction z, the second wire 49A is sufficiently separated from the first wire 48A in the thickness direction z.

[0105] 18 and 19 , the second wire 49A is curved so as to be convex toward the first wire 48A when viewed in the thickness direction z. The second wire 49A straddles the first wire 48A when viewed in the thickness direction z. The second wire 49A is also spaced apart from the first wire 48A in the thickness direction z. In this modified example shown in FIGS. 18 and 19 , even if wire sweep occurs in the second wire 49A during molding of the sealing resin 50, contact between the adjacent first wire 48A and second wire 49A can be avoided. Additionally, this modified example achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0106] 20 and 21, a first wire 48B and a second wire 49B are arranged. The first wire 48B and the second wire 49B are curved so as to be convex downward in FIG. 20 due to wire sweep that occurs when molding the sealing resin 50.

[0107] The first wire 48B has a first end 481 and a second end 482. The first end 481 is joined to the z1 side of the semiconductor element 36 in the thickness direction z. The semiconductor element 36 is mounted on the z1 side of the lead 17D in the thickness direction z. The second end 482 is joined to the z1 side of the lead 18D in the thickness direction z. The semiconductor element 36 corresponds to an example of a "first element" in the present disclosure.

[0108] The second wire 49B has a third end 491 and a fourth end 492. The third end 491 is joined to the z1 side of the semiconductor element 26 in the thickness direction z. The semiconductor element 26 is mounted on the z1 side of the lead 17C in the thickness direction z. The fourth end 492 is joined to the z1 side of the lead 18C in the thickness direction z. The semiconductor element 26 corresponds to an example of a "second element" in the present disclosure. In the example shown in FIGS. 20 and 21 , the entire length of the second wire 49B is longer than the entire length of the first wire 48B. The third end 491 joined to the z1 side of the semiconductor element 26 in the thickness direction z is located on the z2 side in the thickness direction z of the first end 481 joined to the z1 side of the semiconductor element 35 in the thickness direction z.

[0109] 20 , due to wire sweep, the second wire 49B is curved so as to be convex toward the first wire 48B as viewed in the thickness direction z. The second wire 49B straddles the first wire 48B as viewed in the thickness direction z. In the illustrated example, the second wire 49B straddles the second end 482 of the first wire 48B. Meanwhile, as viewed in the thickness direction z, the line segment s3 connecting the third end 491 and the fourth end 492 does not intersect with the first wire 48B. Therefore, before the molding of the sealing resin 50, the second wire 49B does not intersect with the first wire 48B as viewed in the thickness direction z.

[0110] 21, the region surrounded by the dotted line is a portion where the second wire 49B may cross over the first wire 48B as viewed in the thickness direction z due to wire sweep. As can be seen from Figures 20 and 21, in the portion where the second wire 49B may cross over the first wire 48B as viewed in the thickness direction z, the second wire 49B is sufficiently separated from the first wire 48B in the thickness direction z.

[0111] 20 and 21 , the second wire 49B is curved so as to be convex toward the first wire 48B when viewed in the thickness direction z. The second wire 49B straddles the first wire 48B when viewed in the thickness direction z. The second wire 49B is also spaced apart from the first wire 48B in the thickness direction z. In this modified example shown in FIGS. 20 and 21 , even if the second wire 49B sweeps due to molding of the sealing resin 50, contact between the adjacent first wire 48B and second wire 49B can be avoided. Additionally, this modified example achieves the same effects as the semiconductor device A10 within the same configuration as the semiconductor device A10 of the above embodiment.

[0112] The semiconductor device according to the present disclosure is not limited to the above-described embodiment, and the specific configuration of each part of the semiconductor device according to the present disclosure can be freely modified in various ways.

[0113] The present disclosure includes configurations related to the following supplementary notes. Supplementary note 1. A semiconductor device comprising: one or more leads; one or more semiconductor elements arranged on one side of the one or more leads in a thickness direction; a plurality of wires each electrically connected to at least one of the one or more leads and the one or more semiconductor elements; and a sealing resin covering the one or more semiconductor elements, the plurality of wires, and at least a portion of the one or more leads, wherein the plurality of wires include a first wire and a second wire, and the second wire is curved so as to be convex toward the first wire when viewed in the thickness direction, and the second wire straddles the first wire when viewed in the thickness direction and is spaced apart from the first wire in the thickness direction. Supplementary note 2. The semiconductor device according to Supplementary note 1, wherein the first wire has a first end located at one end and a second end located at the other end, the second wire has a third end located at one end and a fourth end located at the other end, and a line segment connecting the third end and the fourth end does not intersect with the first wire when viewed in the thickness direction. Supplementary note 3. The semiconductor device according to Supplementary Note 2, wherein the first end is located on the one side in the thickness direction relative to the second end. Supplementary Note 4. The semiconductor device according to Supplementary Note 3, wherein the third end is located on the one side in the thickness direction relative to the fourth end. Supplementary Note 5. The semiconductor device according to Supplementary Note 4, wherein the third end is located closer to the second end of the first wire than the first end of the first wire. Supplementary Note 6. The semiconductor device according to Supplementary Note 5, wherein the fourth end is located closer to the first end of the first wire than the second end of the first wire. Supplementary Note 7. The semiconductor device according to any of Supplements 1 to 6, wherein the total length of the second wire is longer than the total length of the first wire. Supplementary Note 8. The semiconductor device according to any of Supplements 3 to 6, wherein the second wire straddles the second end of the first wire when viewed in the thickness direction. Supplementary Note 9. The semiconductor device of any one of appendixes 4 to 6, wherein the second wire includes a first bent portion close to the third end, a second bent portion close to the fourth end, a first section between the first bent portion and the second bent portion, and a second section between the second bent portion and the fourth end, and the first section straddles the first wire when viewed in the thickness direction.Supplementary Note 10. The semiconductor device according to any one of Supplementary Notes 4 to 6, wherein the third end is located on the one side in the thickness direction relative to the first end. Supplementary Note 11. The semiconductor device according to any one of Supplementary Notes 2 to 6, wherein each of the first wire and the second wire is electrically connected to the one or more semiconductor elements. Supplementary Note 12. The semiconductor device according to Supplementary Note 11, wherein the one or more semiconductor elements include a first element and a second element, the first end is joined to the one side in the thickness direction of the first element, the second end is joined to the one side in the thickness direction of any of the one or more leads, the third end is joined to the one side in the thickness direction of the second element, and the fourth end is joined to the one side in the thickness direction of any of the one or more leads. Supplementary Note 13. The semiconductor device according to Supplementary Note 12, wherein the first element is a driving element, and the second element is a switching element.

[0114] A10, A11: semiconductor device 11: first lead 111: mounting portion 111A: main surface 112: first terminal portion 113: first connecting portion 113A: region 114: first suspending portion 114A: end surface 12: second lead 121: first strip-shaped portion 122A, 122B: second strip-shaped portion 123: second terminal portion 124: second connecting portion 124A: region 125: second suspending portion 125A: end surface 126: second auxiliary suspending portion 126A: end surface 13: third lead 130: first pad portion 130A: main surface 130B: hole 130C: groove portion 131A: first region 131B: second region 131C: third region 132: third terminal portion 133: Third connecting portion 133A: Outer connecting portion 133B: First inner connecting portion 133C: Second inner connecting portion 133D: Groove portion 134: Third hanging portion 134A: End surface 134B: Groove portion 135: Third auxiliary hanging portion 135A: End surface 14: Fourth lead 14A: U-phase lead 14B: V-phase lead 14C: W-phase lead 141: Second pad portion 141A: Main surface 141B: Hole 141C: Groove portion 141D: End surface 142: Fourth terminal portion 15: Fifth lead 151: Connection portion 152: Fifth terminal portion 16: Sixth lead 161: Connection portion 162: Sixth terminal portion 17A, 17B, 17C, 17D, 18A, 18B, 18C, 18D: Leads 21: Drive element 21A: Electrode 22: Control element 22A: Electrode 25, 26: Semiconductor element 29: Bonding layer 31: First switching element 31A: First element main surface 31B: First element back surface 311: First main surface electrode 312: First back surface electrode 313: First gate electrode 32: Second switching element 32A: Second element main surface 32B: Second element back surface 321: Second main surface electrode 322: Second back surface electrode 323: Second gate electrode 35, 36: Semiconductor element 39: Conductive bonding layer 41, 42: Wire 42A: First wire 421: First end 422: Second end 431, 432, 441, 442, 45: Wire 45A, second wire 451: third end 452: fourth end 453: first bent portion 454: second bent portion 455: first section 456: second section 46, 47: Wire 48A,48B: First wire 481: First end 482: Second end 49A, 49B: Second wire 491: Third end 492: Fourth end 50: Sealing resin 51A, 51B: First side surface 52A, 52B: Second side surface s1, s2, s3: Line segment z: Thickness direction x: First direction y: Second direction

Claims

1. A semiconductor device comprising: one or more leads; one or more semiconductor elements arranged on one side of the one or more leads in a thickness direction; a plurality of wires each electrically connected to at least one of the one or more leads and the one or more semiconductor elements; and a sealing resin covering the one or more semiconductor elements, the plurality of wires, and at least a portion of the one or more leads, wherein the plurality of wires include a first wire and a second wire, the second wire is curved so as to be convex toward the side of the first wire when viewed in the thickness direction, and the second wire straddles the first wire when viewed in the thickness direction and is separated from the first wire in the thickness direction.

2. The semiconductor device described in claim 1, wherein the first wire has a first end located at one end and a second end located at the other end, the second wire has a third end located at one end and a fourth end located at the other end, and when viewed in the thickness direction, a line segment connecting the third end and the fourth end does not intersect with the first wire.

3. The semiconductor device according to claim 2, wherein the first end portion is located on the one side in the thickness direction relative to the second end portion.

4. The semiconductor device according to claim 3, wherein the third end is located on the one side in the thickness direction relative to the fourth end.

5. The semiconductor device according to claim 4, wherein the third end is located closer to the second end than the first end of the first wire.

6. The semiconductor device according to claim 5, wherein the fourth end is located closer to the first end than the second end of the first wire.

7. The semiconductor device according to claim 1, wherein the total length of said second wire is longer than the total length of said first wire.

8. The semiconductor device according to claim 3, wherein the second wire straddles the second end of the first wire when viewed in the thickness direction.

9. A semiconductor device as described in any one of claims 4 to 6, wherein the second wire includes a first bent portion close to the third end, a second bent portion close to the fourth end, a first section between the first bent portion and the second bent portion, and a second section between the second bent portion and the fourth end, and the first section straddles the first wire when viewed in the thickness direction.

10. The semiconductor device according to claim 4, wherein the third end is located on the one side in the thickness direction relative to the first end.

11. The semiconductor device according to claim 2, wherein each of the first wire and the second wire is electrically connected to the one or more semiconductor elements.

12. The semiconductor device described in claim 11, wherein the one or more semiconductor elements include a first element and a second element, the first end is joined to the one side in the thickness direction of the first element, the second end is joined to the one side in the thickness direction of any of the one or more leads, the third end is joined to the one side in the thickness direction of the second element, and the fourth end is joined to the one side in the thickness direction of any of the one or more leads.

13. The semiconductor device according to claim 12, wherein the first element is a drive element, and the second element is a switching element.

Images