Semiconductor device and method for manufacturing semiconductor device

Abstract

This semiconductor device comprises a plurality of terminals, a semiconductor chip mounted on the plurality of terminals, and a sealing resin for sealing the plurality of terminals and the semiconductor chip. Each of the plurality of terminals includes: a rear surface, at least a part of which is exposed from the sealing resin; a front surface on which the semiconductor chip is mounted; a tip surface which is provided within the sealing resin and which is an end surface in a first direction orthogonal to the Z direction; and a projecting portion which is positioned at an intermediate portion in the Z direction on the tip surface.

Description

Semiconductor device and method for manufacturing the same

[0001] The present disclosure relates to a semiconductor device and a method for manufacturing the semiconductor device.

[0002] Patent Document 1 discloses a semiconductor device including a lead frame, a semiconductor element including pillars joined to the lead frame by solder, and a resin that seals the lead frame and the semiconductor element.

[0003] Japanese Patent Application Laid-Open No. 2020-188083

[0004] [Summary] It is desirable to suppress the concentration of stress in terminals.

[0005] A semiconductor device according to one embodiment of the present disclosure comprises a plurality of terminals, a semiconductor chip mounted on the plurality of terminals, and a sealing resin that seals the plurality of terminals and the semiconductor chip, wherein the plurality of terminals include a back surface at least partially exposed from the sealing resin, a front surface on which the semiconductor chip is mounted, a tip surface that is provided within the sealing resin and is an end surface in a first direction perpendicular to the thickness direction of the terminals, and a protrusion portion located in the middle of the tip surface in the thickness direction.

[0006] FIG. 1 is a schematic perspective view of a semiconductor device according to one embodiment. FIG. 2 is a schematic plan view of the interior of the semiconductor device of FIG. 1. FIG. 3 is a schematic back view of the semiconductor device of FIG. 1. FIG. 4 is a schematic cross-sectional view of the semiconductor device taken along line F4-F4 in FIG. 2. FIG. 5 is a schematic cross-sectional view of an enlarged view of the semiconductor device of FIG. 4. FIG. 6 is a schematic plan view showing an exemplary manufacturing process of a semiconductor device according to one embodiment. FIG. 7 is a schematic end view of a metal plate taken along line F7-F7 in FIG. 6. FIG. 8 is a schematic end view showing a manufacturing process subsequent to the process shown in FIG. 7. FIG. 9 is a schematic end view showing a manufacturing process subsequent to the process shown in FIG. 8. FIG. 10 is a schematic end view showing a manufacturing process subsequent to the process shown in FIG. 9. FIG. 11 is a schematic end view showing a manufacturing process subsequent to the process shown in FIG. 10. FIG. 12 is a schematic end view showing a manufacturing process subsequent to the process shown in FIG. 11. FIG. 13 is a schematic cross-sectional view showing a manufacturing process subsequent to the process shown in FIG. 12. FIG. 14 is a schematic cross-sectional view of a semiconductor device according to a comparative example. 15A and 15B are schematic end views showing a manufacturing process of a semiconductor device of a comparative example, and FIG. 16A and 16B are schematic end views showing a manufacturing process subsequent to the process shown in FIG.

[0007] DETAILED DESCRIPTION Hereinafter, several embodiments of semiconductor devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The phrase "at least one" as used herein means "one or more" of the desired options. As an example, the phrase "at least one" as used herein means "only one option" or "both of two options" when the number of options is two. As another example, the phrase "at least one" as used herein means "only one option" or "any combination of two or more options" when the number of options is three or more.

[0010] As used in this specification, "the length (dimension) of A is equal to the length (dimension) of B" or "the length (dimension) of A and the length (dimension) of B are equal to each other" also includes a relationship in which the difference between the length (dimension) of A and the length (dimension) of B is, for example, within 10% of the length (dimension) of A.

[0011] <Embodiment> [Configuration of Semiconductor Device] The overall configuration of a semiconductor device 10 according to one embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 schematically illustrates a perspective view of the semiconductor device 10. FIG. 2 schematically illustrates a planar view of the interior of the semiconductor device 10. FIG. 3 schematically illustrates a rear surface structure of the semiconductor device 10. FIG. 4 schematically illustrates a cross-sectional view of the semiconductor device 10 taken along line F4-F4 in FIG. 2. FIG. 5 illustrates an enlarged view of a portion of the cross-sectional view of the semiconductor device 10 in FIG. 4. Note that in FIG. 1, a semiconductor chip 20 (described later) is indicated by a dashed line. In FIG. 2, a sealing resin 40 (described later) is indicated by a two-dot chain line. In FIG. 3, the semiconductor chip 20 is indicated by a two-dot chain line. Note that the term "plan view" used in this disclosure refers to viewing the semiconductor device 10 or components of the semiconductor device 10 in the Z direction of the X, Y, and Z axes, which are orthogonal to each other, in FIG. 1.

[0012] 1 and 4 , the semiconductor device 10 includes a semiconductor chip 20, a plurality of terminals 30, and a sealing resin 40. The semiconductor chip 20 is mounted on the plurality of terminals 30. The sealing resin 40 is provided to seal the semiconductor chip 20 and the plurality of terminals 30.

[0013] The sealing resin 40 constitutes the front, back, and side surfaces of the semiconductor device 10. The sealing resin 40 is formed in the shape of a rectangular flat plate with its thickness direction aligned in the Z direction. In other words, it can be said that the semiconductor device 10 is formed in the shape of a rectangular flat plate with its thickness direction aligned in the Z direction.

[0014] The sealing resin 40 includes a sealing front surface 40S and a sealing back surface 40R facing opposite each other in the Z direction, and first to fourth sealing side surfaces 40A to 40D connecting the sealing front surface 40S and the sealing back surface 40R. The sealing front surface 40S constitutes the device front surface, the sealing back surface 40R constitutes the device back surface, and the first to fourth sealing side surfaces 40A to 40D constitute the device side surfaces. The first sealing side surface 40A and the second sealing side surface 40B constitute both end surfaces of the sealing resin 40 in the X direction, and the third sealing side surface 40C and the fourth sealing side surface 40D constitute both end surfaces of the sealing resin 40 in the Y direction. The sealing resin 40 is made of, for example, black epoxy resin.

[0015] 2 and 3, the multiple terminals 30 are arranged along the first to fourth sealing side surfaces 40A to 40D in a plan view. The multiple terminals 30 are provided so that a portion thereof is exposed from the sealing resin 40. Each terminal 30 includes a back surface 30R that is partially exposed from the sealing back surface 40R of the sealing resin 40, a front surface 30S facing the opposite side from the back surface 30R, and multiple side surfaces 30A that connect the front surface 30S and the back surface 30R. In this embodiment, the Z direction coincides with the "thickness direction of the terminal 30."

[0016] Each terminal 30 includes a terminal portion 31 and a mounting portion 32. In one example, the terminal portion 31 and the mounting portion 32 are integrated. That is, the terminal portion 31 and the mounting portion 32 are integrally formed from the same metal material. Each terminal 30 is made of a material containing, for example, copper (Cu), aluminum (Al), etc. In this embodiment, each terminal 30 is made of a material containing Cu. Each terminal 30 is formed by etching a metal plate containing Cu. The multiple terminals 30 can also be said to be made of a metal lead frame.

[0017] As shown in FIG. 4 , the terminal portion 31 includes a terminal back surface 31R, at least a portion of which is exposed from the sealing back surface 40R of the sealing resin 40. In this embodiment, the entire terminal back surface 31R is exposed from the sealing back surface 40R. The terminal back surface 31R is a portion of the back surface 30R. The terminal portion 31 includes a terminal front surface 31S facing the opposite side from the terminal back surface 31R. The terminal front surface 31S is a portion of the front surface 30S. The terminal portions 31 of the multiple terminals 30 are arranged closer to the first to fourth sealing side surfaces 40A to 40D than the semiconductor chip 20 in a planar view. Therefore, it can be said that the terminal portions 31 of the multiple terminals 30 are arranged outward from the semiconductor chip 20 in a planar view. In this manner, the package structure of the semiconductor device 10 is a fanout package.

[0018] The terminal portions 31 of the multiple terminals 30 are arranged along the first to fourth sealing side surfaces 40A to 40D in a plan view. Each terminal portion 31 includes an exposed side surface 30AA that is flush with the first to fourth sealing side surfaces 40A to 40D and is exposed from the first to fourth sealing side surfaces 40A to 40D. The exposed side surface 30AA is a part of the side surface 30A of the terminal 30.

[0019] A back surface plating layer 34 is formed on the terminal back surface 31R of each terminal 30. The back surface plating layer 34 is an example of a "back surface conductive film." The back surface plating layer 34 is provided so as to protrude from the sealing back surface 40R. A side surface plating layer 35 is formed on the exposed side surface 30AA of each terminal 30. The side surface plating layer 35 is an example of a "side surface conductive film." The side surface plating layer 35 is provided so as to protrude from the first to fourth sealing side surfaces 40A to 40D. In this embodiment, the back surface plating layer 34 and the side surface plating layer 35 are integrated. The back surface plating layer 34 and the side surface plating layer 35 include at least one of gold (Au), nickel (Ni), tin (Sn), and palladium (Pd), for example.

[0020] The mounting portion 32 is provided within the sealing resin 40. The mounting portion 32 extends from the terminal portion 31 in a direction intersecting the Z direction. In one example, the mounting portion 32 extends from the terminal portion 31 in a direction perpendicular to the Z direction. Hereinafter, the direction in which the mounting portion 32 extends in a planar view is referred to as the "first direction." In FIG. 4, the first direction coincides with the X direction. The mounting portion 32 extends from the terminal portion 31 toward the semiconductor chip 20 in a planar view. The mounting portion 32 includes a portion that is positioned to overlap the semiconductor chip 20 in a planar view. The mounting portion 32 includes a tip surface 32A, which is an end surface in the first direction of the side surface 30A that is provided within the sealing resin.

[0021] The mounting portion 32 includes a mounting surface 32S, which is a portion of the front surface 30S that corresponds to the mounting portion 32. In one example, the mounting surface 32S is flush with the terminal surface 31S of the terminal portion 31. The mounting portion 32 includes a mounting back surface 32R, which is a portion of the back surface 30R that corresponds to the mounting portion 32. The mounting back surface 32R is located closer to the sealing surface 40S than the terminal back surface 31R of the terminal portion 31. The mounting back surface 32R is covered with sealing resin 40.

[0022] 5, the mounting surface 32S and the mounting back surface 32R of the mounting portion 32 are formed by planes that intersect with the Z direction. In the example shown in FIG. 5, the mounting surface 32S is formed by a plane that is perpendicular to the Z direction.

[0023] 2 , among the multiple terminals 30, the terminals 30 arranged at the four corners of the sealing resin 40 in a plan view (hereinafter referred to as “corner terminals 30C”) include two terminal portions 31. The two terminal portions 31 of each corner terminal 30C are arranged at the same position in the X direction and spaced apart from each other in the Y direction. The two terminal portions 31 are connected by a terminal connecting portion 33.

[0024] As shown in Figures 2 to 4, a semiconductor chip 20 is mounted on the mounting portion 32 of each terminal 30. The semiconductor chip 20 is formed in the shape of a rectangular flat plate with its thickness direction in the Z direction. The semiconductor chip 20 includes a semiconductor substrate 21 that constitutes the chip body. The semiconductor substrate 21 is made of a material containing, for example, silicon (Si). The semiconductor chip 20 is, for example, an LSI (Large Scale Integration). The semiconductor chip 20 has a chip front surface 20S and a chip back surface 20R that faces the opposite side of the chip front surface 20S in the Z direction. The chip front surface 20S faces the same side as the sealing back surface 40R of the sealing resin 40. In other words, the chip front surface 20S faces the mounting surface 32S of the mounting portion 32. The chip back surface 20R faces the same side as the sealing surface 40S of the sealing resin 40.

[0025] 4, the semiconductor substrate 21 includes a front surface 21S and a back surface 21R that face opposite each other in the Z direction. The front surface 21S faces the same side as the chip front surface 20S of the semiconductor chip 20. The back surface 21R faces the same side as the chip back surface 20R. In the example shown in FIG. 4, the back surface 21R constitutes the chip back surface 20R.

[0026] 5, the semiconductor chip 20 includes a plurality of wirings 22 provided on a main body surface 21S of a semiconductor substrate 21, and an insulating layer 23 covering the main body surface 21S. The plurality of wirings 22 are provided at positions facing the mounting portions 32 of the plurality of terminals 30 of the semiconductor substrate 21 in the Z direction. The insulating layer 23 includes a plurality of openings that individually expose the plurality of wirings 22 in the Z direction. The plurality of wirings 22 are made of a material including at least one of aluminum (Al), Cu, Au, and titanium (Ti), for example.

[0027] The semiconductor chip 20 includes a plurality of chip terminals 24 formed on the chip surface 20S. The plurality of chip terminals 24 are individually bonded to a plurality of wirings 22. The chip terminals 24 are formed, for example, in a cylindrical shape extending in the Z direction. The chip terminals 24 are bonded to the wirings 22 exposed from openings in the insulating layer 23.

[0028] 5, the chip terminal 24 includes a cylindrical terminal body 24A and a barrier layer 24B provided on the tip surface of the terminal body 24A. The chip terminal 24 includes at least one of Cu, Al, and Ti. The barrier layer 24B is, for example, a plating layer. The barrier layer 24B includes at least one of Au, Ni, and Pd. In one example, the barrier layer 24B is made of a material containing Ni.

[0029] A barrier layer 36 is provided in the region of the mounting surface 32S of the mounting portion 32 of each terminal 30 to which the chip terminal 24 is connected. The region to which the chip terminal 24 is connected can also be referred to as the region to which the semiconductor chip 20 is mounted. The barrier layer 36 can be said to constitute a part of the mounting surface 32S. In one example, the barrier layer 36 is formed in a circular shape in a plan view (see FIG. 3). Note that the shape of the barrier layer 36 in a plan view can be changed as desired. The barrier layer 36 includes, for example, at least one of Ni and Ti.

[0030] The barrier layer 24B of each chip terminal 24 and the barrier layer 36 of the mounting portion 32 corresponding to that barrier layer 24B are bonded together by a conductive bonding material SD. This allows the semiconductor chip 20 to be mounted on the multiple mounting portions 32. The barrier layer 36 is a layer that prevents a decrease in the wettability of the conductive bonding material SD. In this way, the multiple chip terminals 24 are electrically connected to the mounting portions 32 of the multiple terminals 30. Here, the conductive bonding material SD may be, for example, silver (Ag) paste or solder paste.

[0031] (Terminals) Next, the detailed shape of the multiple terminals 30 will be described with reference to FIG. 5 . As shown in FIG. 5 , the multiple terminals 30 include protrusions 37. The protrusions 37 are located, for example, in the middle of the tip surface 32A in the Z direction. Here, the "middle" refers to the region between both ends of the tip surface 32A in the Z direction. More specifically, the mounting portion 32 has a front end 32AS, which is the end on the front surface 30S side of the terminal 30 in the Z direction, and a back end 32AR, which is the end on the back surface 30R side of the terminal 30 in the Z direction. The middle is the region of the tip surface 32A between the front end 32AS and the back end 32AR in the Z direction. In this embodiment, the protrusions 37 are located at the center of the tip surface 32A in the Z direction. Here, if the difference between the distance DZ1 in the Z direction between the mounting surface 32S and the protrusion 37 and the distance DZ2 in the Z direction between the mounting back surface 32R and the protrusion 37 is within 10% of the distance DZ1 between the mounting surface 32S and the protrusion 37 (or the distance DZ2 between the mounting back surface 32R and the protrusion 37), it can be said that the protrusion 37 is located at the center of the tip surface 32A in the Z direction.

[0032] In this embodiment, the protrusion 37 is formed over the entire tip surface 32A in the width direction (Y direction in FIG. 5 ), which is a direction perpendicular to the extension direction of the mounting portion 32 in a plan view. Hereinafter, the direction perpendicular to the extension direction of the mounting portion 32 in a plan view will be referred to as the "second direction." Although not shown, the protrusion 37 is also formed on the side surfaces 30A on both sides of the terminal 30 in the width direction (second direction). In one example, the protrusion 37 formed on the tip surface 32A and the protrusion 37 formed on the side surfaces 30A on both sides of the terminal 30 in the width direction (second direction) are integrated. The protrusion 37 includes two side surfaces 37A, 37B facing opposite each other in the Z direction. The two side surfaces 37A, 37B are aligned in the Z direction. Each of the two side surfaces 37A, 37B is formed by a curved surface that approaches each other toward the tip of the protrusion 37.

[0033] As shown in FIG. 5 , the thickness TB of the mounting portion 32 is thicker than the thickness TA of the semiconductor chip 20. In one example, the ratio of the thickness TB of the mounting portion 32 to the thickness TA of the semiconductor chip 20 is greater than 1 and not greater than 1.8. In one example, the thickness TA of the semiconductor chip 20 is approximately 100 μm. In one example, the thickness TB of the mounting portion 32 is approximately 180 μm. Here, the thickness TB of the mounting portion 32 can be defined as the distance in the Z direction between the mounting surface 32S and the mounting back surface 32R. Furthermore, the thickness TA of the semiconductor chip 20 can be defined as the distance in the Z direction between the chip surface 20S and the chip back surface 20R.

[0034] The thickness TB of the mounting portion 32 is thinner than the thickness TC of the terminal portion 31. In one example, the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 is greater than 1 / 2. In one example, the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 is 4 / 5 or less. The length L2 of the mounting portion 32 in the first direction is longer than the length L1 of the terminal portion 31 in the first direction. Here, the thickness TC of the terminal portion 31 can be defined by the distance in the Z direction between the terminal back surface 31R and the terminal front surface 31S.

[0035] The plurality of terminals 30 include a step portion 39. The step portion 39 is formed so that a mounting back surface 32R, which is a portion of the back surface 30R corresponding to the mounting portion 32, is located closer to the front surface 30S than the terminal back surface 31R of the terminal portion 31. The step portion 39 is formed between the mounting portion 32 and the terminal portion 31. In this embodiment, the step portion 39 connects the terminal back surface 31R and the mounting back surface 32R. The step portion 39 includes a curved surface. In this embodiment, the step portion 39 is formed by a curved surface.

[0036] The dimension DZ3 of the step portion 39 in the thickness direction (Z direction) is smaller than the thickness TB of the mounting portion 32. Here, the dimension DZ3 of the step portion 39 in the thickness direction can be defined as the distance in the Z direction between the terminal back surface 31R and the mounting back surface 32R. In one example, the dimension DZ3 of the step portion 39 in the thickness direction is equal to the thickness TD of the portion of the sealing resin 40 that covers the mounting back surface 32R. The thickness TD of the portion of the sealing resin 40 that covers the mounting back surface 32R is less than half the thickness TB of the mounting portion 32.

[0037] In one example, the dimension DZ3 of the step portion 39 in the thickness direction (Z direction) is smaller than the distance DZ2 in the Z direction between the mounting back surface 32R and the protrusion 37. In one example, the dimension DZ3 of the step portion 39 in the thickness direction is smaller than the distance DZ1 between the mounting surface 32S and the protrusion 37.

[0038] 6 to 13, an example of a method for manufacturing the semiconductor device 10 will be described. The method for manufacturing the semiconductor device 10 mainly includes a step of preparing a plurality of terminals 30, a step of mounting the semiconductor chip 20 on the plurality of terminals 30, a step of cleaning the plurality of terminals 30 and the semiconductor chip 20, a step of forming the sealing resin 40, and a step of singulating.

[0039] 6 to 10 show an example of a process for preparing a plurality of terminals 30. FIG. 6 schematically shows the planar structure of a portion of the metal plate 820. The dashed line shown in FIG. 6 indicates the boundary between the terminal portion 31 and the mounting portion 32 in a plan view. Note that in FIG. 6, dots are added to the front-side resist 910S and the back-side resist 910R, which will be described later, to make the drawing easier to understand. FIGS. 7 to 10 schematically show the end face structure of a portion of the metal plate 820. The end face position in FIGS. 7 to 10 in a plan view is indicated by line F7-F7 in FIG. 6.

[0040] 6 and 7 , in the process of preparing the plurality of terminals 30, a metal plate 820 is prepared. The metal plate 820 is formed in a flat plate shape with its thickness direction in the Z direction. The metal plate 820 is made of a material containing Cu, for example. The metal plate 820 includes a front surface 820S and a back surface 820R that face opposite each other in the Z direction.

[0041] Next, a front-side resist 910S is formed on the front surface 820S of the metal plate 820. As shown in Fig. 6, the front-side resist 910S covers portions of the front surface 820S of the metal plate 820 that correspond to the terminal portions 31 and the mounting portion 32. As shown in Fig. 7, a back-side resist 910R is formed on the back surface 820R of the metal plate 820. The back-side resist 910R covers portions of the back surface 820R of the metal plate 820 that correspond to the terminal portions 31 (see Fig. 6).

[0042] 8 , a recess 821 is formed by etching a portion of the surface 820S of the metal plate 820. The recess 821 is formed in a portion of the surface 820S of the metal plate 820 that is exposed from the front-side resist 910S. In other words, the recess 821 is formed in the surface 820S of the metal plate 820 by etching a portion of the surface 820S of the metal plate 820 that is different from the terminals 30.

[0043] Further, a recess 822 is formed by etching the rear surface 820R of the metal plate 820. The recess 822 is formed in a portion of the rear surface 820R of the metal plate 820 that is exposed from the rear surface resist 910R. This forms the mounting rear surface 32R of the mounting portion 32. Furthermore, a step portion 39 is formed between the mounting portion 32 and the terminal portion 31 so as to be located closer to the front surface 30S than the terminal rear surface 31R of the terminal portion 31.

[0044] 9 , a back-side resist 920 is formed on the back surface 820R of the metal plate 820. The back-side resist 920 covers the back-side resist 910R and also covers a portion of the back surface 820R of the metal plate 820 that corresponds to the mounting back surface 32R. In other words, the back-side resist 920 covers a part of the recess 822. On the other hand, like the front-side resist 910S, the back-side resist 920 exposes a portion of the back surface 820R of the metal plate 820 that is different from the terminals 30.

[0045] As shown in FIG. 10 , the recess 821 is etched from the front surface 820S side of the metal plate 820, and the recess 822 is etched from the back surface 820R side of the metal plate 820. In this process, the terminal portion 31 and the mounting portion 32 are formed by removing portions of the metal plate 820 other than the terminal 30. Then, a tip surface 32A, which is an end surface in a first direction perpendicular to the thickness direction (Z direction) of the terminal 30, and a protrusion 37 located at the middle of the tip surface 32A in the Z direction are formed. In this embodiment, the amount of etching in the Z direction on the front surface 820S side of the metal plate 820 is equal to the amount of etching in the Z direction on the back surface 820R side of the metal plate 820. Therefore, the protrusion 37 is formed at the center of the tip surface 32A in the Z direction.

[0046] Thereafter, the front surface resist 910S and the back surface resists 910R and 920 are removed. Through the above steps, the lead frame 830 including the terminal portions 31 and mounting portions 32 of the multiple terminals 30 is formed.

[0047] FIG. 11 shows an example of a process for mounting a semiconductor chip 20 on a lead frame 830. In the process of mounting a semiconductor chip 20 on a lead frame 830, first, multiple chip terminals 24 of the semiconductor chip 20 are arranged on the lead frame 830. More specifically, first, a barrier layer 36 is formed on the mounting surface 32S of each terminal 30 of the lead frame 830. Next, a layer of conductive bonding material SD is formed on the barrier layer 36. Note that the conductive bonding material SD may be formed on the chip terminals 24 of the semiconductor chip 20. Alternatively, the conductive bonding material SD may be formed on both the barrier layer 36 and the chip terminals 24. Next, for example, if solder paste is used as the conductive bonding material SD, flux is applied. Next, each chip terminal 24 of the semiconductor chip 20 is arranged on the conductive bonding material SD on the barrier layer 36 of the mounting surface 32S of each terminal 30 of the lead frame 830. Next, the conductive bonding material SD is melted by, for example, a reflow process, and then solidified. As a result, the plurality of chip terminals 24 are joined to the lead frame 830. As a result, the plurality of chip terminals 24 are electrically connected to the lead frame 830.

[0048] 12 shows a process of cleaning the semiconductor chip 20 mounted on the lead frame 830. In the cleaning process, for example, the semiconductor chip 20 and the lead frame 830 are cleaned and residues such as flux are removed. In one example, the cleaning process includes spray cleaning.

[0049] More specifically, the lead frame 830 on which the semiconductor chip 20 is mounted is carried into, for example, a cleaning device 930 while being supported by a support substrate 850. The cleaning device 930 includes a plurality of spray nozzles 931. Each spray nozzle 931 is configured to spray pure water and chemicals onto the semiconductor chip 20 and the lead frame 830. This cleans and removes foreign matter and dirt adhering to the semiconductor chip 20 and the lead frame 830.

[0050] 13 shows a process of forming the sealing resin 40 and a process of singulating the sealing resin 40. Fig. 13 shows a schematic cross-sectional structure of a part of the lead frame 830, the semiconductor chip 20, and a resin layer 840 (described later) cut away.

[0051] In the step of forming the sealing resin 40, a resin layer 840 is formed by, for example, transfer molding so as to cover the semiconductor chip 20 and the lead frame 830. The resin layer 840 includes a plurality of sealing resins 40.

[0052] Next, in the singulation step, the resin layer 840 and the lead frame 830 are cut along the cutting lines CL in FIG. 13 by, for example, dicing. This forms a plurality of sealing resins 40 and a plurality of terminals 30. Then, exposed side surfaces 30AA (see FIG. 4) of the plurality of terminals 30 are exposed from the first to fourth sealing side surfaces 40A to 40D (see FIG. 2) of the sealing resin 40.

[0053] Next, although not shown, the manufacturing method of the semiconductor device 10 includes a process of forming a back surface plating layer 34 and a side surface plating layer 35 (both see FIG. 4 ). The back surface plating layer 34 and the side surface plating layer 35 are formed by, for example, electroless plating. As a result, the back surface plating layer 34 and the side surface plating layer 35 are formed on each of the terminal back surfaces 31R and exposed side surfaces 30AA (see FIG. 4 ) of the multiple terminals 30 exposed from the sealing resin 40. Through the above processes, the semiconductor device 10 is manufactured.

[0054] [Operation of the Embodiment] The operation of the semiconductor device 10 of this embodiment will be described. First, the configuration of the semiconductor device 10X of the comparative example will be described with reference to FIG. 14. FIG. 14 schematically shows the cross-sectional structure of the semiconductor device 10X of the comparative example. The cross-sectional position in FIG. 14 is the same as the cross-sectional position of the semiconductor device 10 of FIG. 4. Furthermore, for components of the semiconductor device 10 of the comparative example that correspond to those of the semiconductor device 10 of the embodiment, an "X" is added to the reference numeral of the component of the semiconductor device 10.

[0055] As shown in FIG. 14 , the semiconductor device 10X of the comparative example differs from the semiconductor device 10 of the embodiment in the configuration of the multiple terminals 30X. More specifically, the thickness TBX of the mounting portion 32X of the semiconductor device 10X of the comparative example is thinner than the thickness TB of the mounting portion 32 of the semiconductor device 10 of the embodiment (see FIG. 5 ). Accordingly, the thickness TDX of the portion of the sealing resin 40X of the comparative example that covers the mounting back surface 32RX of the mounting portion 32X is thicker than the thickness TD of the portion of the sealing resin 40 of the embodiment that covers the mounting back surface 32R (see FIG. 5 ). Furthermore, the protrusion 37X is located at the back surface end 32ARX of the mounting portion 32X in the Z direction. The protrusion 37X has a shape in which the mounting surface 32SX side is curved and the mounting back surface 32RX side is flat, extending in a direction perpendicular to the Z direction. The position and shape of the protrusion 37X in the Z direction differ due to a manufacturing method different from that of the semiconductor device 10 of the embodiment.

[0056] A method for manufacturing the plurality of terminals 30X of the semiconductor device 10X of the comparative example will be described below with reference to Figures 15 and 16. Figures 15 and 16 are schematic end views showing a part of a process for forming a lead frame 830X including the plurality of terminals 30X from a metal plate 820X of the semiconductor device 10X of the comparative example. Note that the end surface positions in Figures 15 and 16 are the same as the cross-sectional positions in Figure 14.

[0057] 15 , a front-side resist 900SX is formed on a front surface 820SX of a metal plate 820X, and a back-side resist 900RX is formed on a back surface 820RX of the metal plate 820X. The shape of the front-side resist 900SX may be the same as the front-side resist 910S formed on the front surface 820S in the embodiment. The shape of the back-side resist 900RX may be the same as the back-side resist 910R formed on the back surface 820R in the embodiment.

[0058] As shown in FIG. 16 , etching is performed from both the front surface 820SX side and the back surface 820RX side of the metal plate 820. This removes the portions of the metal plate 820X that are different from the terminals 30. More specifically, first, half-etching is performed from the back surface 820RX side of the metal plate 820X. This forms the mounting back surface 32RX and the terminal portion 31X. Next, etching is performed from the front surface 820SX side of the metal plate 820X. This removes the portions of the metal plate 820X that are different from the terminals 30, and forms the mounting portion 32X. Finally, a tip surface 32AX, which is an end surface in a first direction perpendicular to the thickness direction of the terminal 30, and a protrusion 37X located at a back surface end 32ARX of the tip surface 32AX are formed. Therefore, in the semiconductor device 10X of the comparative example, the protrusion 37X is located at the back surface end 32ARX.

[0059] For example, when a temperature cycle test is performed, stress concentrates at the Z-direction end of the tip of the mounting portion of each terminal due to the difference in linear expansion coefficient between the sealing resin and the end. In the semiconductor device 10X of the comparative example, the protrusion 37X is provided at the rear surface side end 32ARX of the mounting portion 32X of each terminal 30X, which further concentrates stress. The concentration of stress can cause cracks in the sealing resin 40, peeling of the sealing resin 40 from the terminal 30X, and the like.

[0060] In this regard, in the semiconductor device 10 of this embodiment, the protrusion 37 is formed in the middle portion in the Z direction of the tip surface 32A of the mounting portion 32. Therefore, compared to the configuration of the comparative example, it is possible to suppress the concentration of stress at the rear surface side end 32AR of the tip surface 32A of the mounting portion 32.

[0061] Furthermore, in the semiconductor device 10X of the comparative example, the back surface 820RX side of the metal plate 820 is removed by half etching. Therefore, the thickness TBX of the mounting portion 32X is approximately half the thickness TCX of the terminal portion 31X. In the semiconductor device 10X of the comparative example, during the cleaning process for cleaning the multiple terminals 30X and the semiconductor chip 20, the mounting portion 32X vibrates in the Z direction due to the sprayed pure water and chemicals. This applies force to the conductive bonding material SD that bonds the mounting portion 32X to the chip terminals 24 of the semiconductor chip 20, which may cause the conductive bonding material SD to crack or peel off. As a result, the electrical connection between the mounting portion 32X and the chip terminals 24 may become unstable.

[0062] In this regard, in the semiconductor device 10 of this embodiment, the thickness TB of the mounting portion 32 of the multiple terminals 30 is greater than half the thickness TC of the terminal portion 31. In other words, the thickness TB of the mounting portion 32 is greater than the thickness TBX of the mounting portion 32X of the semiconductor device 10X of the comparative example. Therefore, during the cleaning process for cleaning the multiple terminals 30 and the semiconductor chip 20, the mounting portion 32 can be prevented from vibrating in the Z direction due to the sprayed pure water and chemicals. This reduces the amount of force applied to the conductive bonding material SD that bonds the mounting portion 32 to the chip terminals 24, thereby preventing the conductive bonding material SD from cracking or peeling. This stabilizes the electrical connection between the mounting portion 32 and the chip terminals 24.

[0063] Effects of the Embodiment The semiconductor device 10 of this embodiment has the following effects: (1) The semiconductor device 10 includes a plurality of terminals 30, a semiconductor chip 20 mounted on the plurality of terminals 30, and a sealing resin 40 that seals the plurality of terminals 30 and the semiconductor chip 20, and the plurality of terminals 30 include a back surface 30R at least a portion of which is exposed from the sealing resin 40, a front surface 30S on which the semiconductor chip 20 is mounted, a tip surface 32A that is provided in the sealing resin 40 and is an end surface in the X direction perpendicular to the thickness direction (Z direction) of the terminal 30, and a protrusion 37 that is located in the middle of the tip surface 32A in the Z direction.

[0064] With this configuration, the protrusion 37 is located at the middle of the front end 32AS or the back end 32AR of the tip surface 32A, rather than at the front end 32AS or the back end 32AR. This reduces stress concentration at the front end 32AS or the back end 32AR of the mounting portion 32.

[0065] (2) The protrusion 37 is located at the center in the Z direction on the tip surface 32A of the mounting portion 32. This configuration can prevent stress from concentrating on either the front surface end 32AS or the back surface end 32AR of the tip surface 32A, compared to a configuration in which the protrusion 37 is located closer to the front surface end 32AS or the back surface end 32AR than the center of the tip surface 32A.

[0066] (3) The protrusions 37 extend over the entire tip surface 32A in the Y direction. This configuration can prevent stress from concentrating on a portion of the tip surface 32A, compared to a configuration in which the protrusions 37 are formed only on a portion of the tip surface 32A in the Y direction. In addition, the protrusions 37 make it difficult for the sealing resin 40 and the terminals 30 to move relative to each other in the Z direction, making it difficult for the terminals 30 to fall off the sealing resin 40.

[0067] (4) The protrusion 37 includes two side surfaces 37A and 37B that face opposite each other in the Z direction. The two side surfaces 37A and 37B include curved surfaces that approach each other toward the tip of the protrusion 37.

[0068] With this configuration, the shape of the protrusion 37 changes more smoothly than when the protrusion 37 is configured, for example, rectangular. This reduces stress concentration on the protrusion 37. Furthermore, compared to a configuration in which one Z-direction surface of the protrusion 37 includes a plane perpendicular to the Z direction, the forces applied to both side surfaces 37A, 37B of the protrusion 37 in the Z direction are more likely to be equal. This prevents the terminal 30 from deforming in the Z direction due to the different forces applied to both side surfaces 37A, 37B of the protrusion 37 in the Z direction.

[0069] (5) The terminals 30 each include a terminal portion 31 including a terminal back surface 31R that is exposed from the sealing resin 40 on the back surface 30R, and a mounting portion 32 that extends in the first direction from the terminal portion 31 within the sealing resin 40 and includes a tip surface 32A. The ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 is greater than ½.

[0070] This configuration can prevent the mounting portion 32 from being deformed by external forces, compared to a configuration in which the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 is ½ or less. For example, in the process of cleaning a plurality of terminals 30 (see FIG. 12 ), vibration of the mounting portion 32 due to pressure on the terminals 30 from the Z direction can be prevented. Therefore, the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0071] In addition, the thickness TB of the mounting portion 32 is greater than the thickness TBX of the mounting portion 32X of the semiconductor device 10X of the comparative example, so that the electrical resistance of the plurality of terminals 30 is smaller than that of the semiconductor device 10X of the comparative example, allowing a large current to flow through the plurality of terminals 30.

[0072] (6) The portion of the rear surface 30R corresponding to the mounting portion 32 includes a step portion 39 formed between the mounting portion 32 and the terminal portion 31 so as to be located closer to the front surface 30S than the terminal rear surface 31R of the terminal portion 31. A dimension DZ3 of the step portion 39 in the thickness direction (Z direction) is smaller than the thickness TB of the mounting portion 32.

[0073] According to this configuration, the thickness TB of the mounting portion 32 can be made larger than in a configuration in which the dimension DZ3 of the step portion 39 in the thickness direction (Z direction) is larger than the thickness TB of the mounting portion 32. This makes it possible to suppress deformation of the mounting portion 32.

[0074] (7) The step portion 39 includes a curved surface. This configuration reduces stress concentration on the step portion 39 compared to a configuration in which the step portion 39 is made of a flat surface. Therefore, deformation of the mounting portion 32 due to stress concentration on the step portion 39 can be suppressed.

[0075] (8) The dimension DZ3 of the step portion 39 in the thickness direction is smaller than the distance DZ2 in the Z direction between the mounting back surface 32R of the mounting portion 32 and the protrusion 37. With this configuration, the thickness TB of the mounting portion 32 can be made thicker than in a configuration in which the dimension DZ3 of the step portion 39 in the thickness direction is larger than the distance DZ2 in the Z direction between the mounting back surface 32R and the protrusion 37. This makes it possible to suppress deformation of the mounting portion 32.

[0076] (9) The manufacturing method of the semiconductor device 10 includes preparing a plurality of terminals 30, mounting the semiconductor chip 20 on the plurality of terminals 30, and forming a sealing resin 40 that seals the plurality of terminals 30 and the semiconductor chip 20. Preparing the plurality of terminals 30 includes preparing a metal plate 820 that includes a front surface 30S and a back surface 30R facing the opposite side to the front surface 30S, and selectively removing the metal plate 820 by etching from both the front surface 30S and the back surface 30R, and the selective removal of the metal plate 820 forms a tip surface 32A that is an end surface in a first direction orthogonal to the thickness direction (Z direction) of the terminal 30, and a protrusion 37 located at a middle portion of the tip surface 32A in the Z direction.

[0077] According to this configuration, the protrusion 37 is located at the middle of the front end 32AS or the back end 32AR of the tip surface 32A of the mounting portion 32, rather than at the front end 32AS or the back end 32AR. This reduces stress concentration at the front end 32AS or the back end 32AR of the tip surface 32A of the mounting portion 32.

[0078] (10) Preparing the plurality of terminals 30 includes etching the back surfaces 30R of the plurality of terminals 30 to form a terminal portion 31 including a terminal back surface 31R of the back surface 30R that is exposed from the sealing resin 40, a mounting portion 32 extending from the terminal portion 31 in a first direction, and a step portion 39 formed between the mounting portion 32 and the terminal portion 31 so as to be positioned closer to the front surface 30S than the terminal back surface 31R of the terminal portion 31.

[0079] According to this configuration, the process of forming the step portion 39 and the mounting back surface 32R by etching from the back surface 30R of the terminal 30 and the process of partially removing the lead frame 830 by etching from both the front surface 30S and the back surface 30R to separate each terminal 30 are performed separately. On the other hand, in the manufacturing method of the semiconductor device 10X of the comparative example, the mounting back surface 32RX is formed simultaneously with cutting of the lead frame 830X by etching from both the front surface 30SX and the back surface 30RX of the terminal 30X. Therefore, compared to the manufacturing method of the semiconductor device 10X of the comparative example, it is possible to suppress the formation of the protrusion 37 at one end (back surface end 32AR) of the tip surface 32A.

[0080] <Modifications> The above embodiment can be modified as follows: The following modifications can be combined with each other to the extent that they are not technically inconsistent.

[0081] The ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 can be changed as desired. For example, the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 may be 1 / 2 or less. Furthermore, the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 may be greater than 4 / 5. For example, the ratio of the thickness TB of the mounting portion 32 to the thickness TC of the terminal portion 31 may be 5 / 6 or less, 6 / 7 or less, 7 / 8 or less, 8 / 9 or less, or 9 / 10 or less, within a range greater than 4 / 5.

[0082] The protrusion 37 may be provided at a position offset from the center in the Z direction on the tip surface 32A of the mounting portion 32. The protrusion 37 may be located at the middle between the front end 32AS and the back end 32AR of the tip surface 32A in the Z direction.

[0083] The protrusion 37 does not have to be formed over the entire tip surface 32A of the mounting portion 32 in the width direction (second direction) of the mounting portion 32. In other words, the protrusion 37 may be formed on a part of the tip surface 32A in the second direction.

[0084] Although the step portion 39 is provided to connect the terminal back surface 31R and the mounting back surface 32R in the Z direction, this is not limited to this. In one example, the step portion 39 may be formed spaced apart from the terminal back surface 31R of the terminal portion 31 closer to the front surface 30S of the terminal 30. In this case, a side surface 30A extending along the Z direction and the second direction may be formed between the step portion 39 and the terminal back surface 31R in the Z direction.

[0085] In the method for manufacturing the semiconductor device 10, the step of forming the recess 821 by etching a portion of the surface 820S of the metal plate 820 may be omitted. The ratio of the length L2 of the mounting portion 32 in the first direction to the length L1 of the terminal portion 31 in the first direction may be changed as desired. The length L2 of the mounting portion 32 in the first direction may be shorter than the length L1 of the terminal portion 31 in the first direction.

[0086] One or more of the various examples described herein can be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings of "on" and "above," unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be in contact with the second element and disposed directly on the second element, but in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0087] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z direction described herein being "up" and "down" in the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0088] <Supplementary Notes> The technical ideas that can be understood from this disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the supplementary notes are given the reference numerals of the corresponding components in the above embodiment. The reference numerals are shown as examples to aid understanding, and the components described in each supplementary note should not be limited to the components indicated by the reference numerals.

[0089] [Supplementary Note 1] A semiconductor device (10) comprising: a plurality of terminals (30); a semiconductor chip (20) mounted on the plurality of terminals (30); and a sealing resin (40) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein the plurality of terminals (30) include: a back surface (30R) at least a portion of which is exposed from the sealing resin (40); a front surface (30S) on which the semiconductor chip (20) is mounted; a tip surface (32A) that is provided in the sealing resin (40) and is an end surface in a first direction perpendicular to a thickness direction (Z direction) of the terminals (30); and a protrusion (37) located in a middle portion of the tip surface (32A) in the thickness direction (Z direction).

[0090] [Supplementary Note 2] The semiconductor device according to Supplementary Note 1, wherein the protrusion (37) is located at the center of the tip surface (32A) in the thickness direction (Z direction).

[0091] [Supplementary Note 3] The semiconductor device according to Supplementary Note 1 or 2, wherein a direction perpendicular to both the first direction and the thickness direction (Z direction) is defined as a second direction, and the protrusion (37) extends over the entire tip surface (32A) in the second direction.

[0092] [Supplementary Note 4] The semiconductor device according to any one of Supplementary Notes 1 to 3, wherein the protrusion (37) includes two side surfaces (37A, 37B) facing opposite each other in the thickness direction (Z direction), and each of the two side surfaces (37A, 37B) includes a curved surface that curves toward each other toward the tip of the protrusion (37).

[0093] [Appendix 5] The semiconductor device according to any one of Appendices 1 to 4, wherein the plurality of terminals (30) include a terminal portion (31) including a terminal back surface (31R) of the back surface (30R) that is exposed from the sealing resin (40), and a mounting portion (32) extending from the terminal portion (31) in the first direction within the sealing resin (40) and including the tip surface (32A), and a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TC) of the terminal portion (31) is greater than 1 / 2.

[0094] [Supplementary Note 6] The semiconductor device according to Supplementary Note 5, wherein a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TC) of the terminal portion (31) is 4 / 5 or less.

[0095] [Supplementary Note 7] The semiconductor device according to Supplementary Note 5 or 6, wherein the plurality of terminals (30) include a step portion (39) formed between the mounting portion (32) and the terminal portion (31) such that a mounting back surface (32R) of the back surface (30R) corresponding to the mounting portion (32) is positioned closer to the front surface (30S) than the terminal back surface (31R) of the terminal portion (31), and a dimension (DZ3) of the step portion (39) in the thickness direction (Z direction) is smaller than a thickness (TB) of the mounting portion (32).

[0096] [Supplementary Note 8] The semiconductor device according to Supplementary Note 7, wherein the step portion (39) includes a curved surface.

[0097] [Supplementary Note 9] The semiconductor device according to Supplementary Note 7 or 8, wherein a dimension (DZ3) in the thickness direction of the step portion (39) is smaller than a distance (DZ2) in the thickness direction (Z direction) between the mounting back surface (32R) and the protrusion portion (37).

[0098] [Supplementary Note 10] The semiconductor device according to any one of Supplementary Notes 1 to 9, wherein the length (L2) of the mounting portion (32) in the first direction is longer than the length (L1) of the terminal portion (31) in the first direction.

[0099] [Supplementary Note 11] The semiconductor device according to any one of Supplementary Notes 5 to 10, wherein the plurality of terminals (30) include a back surface conductive film (34) covering the terminal back surfaces (31R).

[0100] [Appendix 12] The semiconductor device according to any one of appendices 1 to 11, wherein the plurality of terminals (30) include exposed side surfaces (30AA) exposed from sealing side surfaces (40A to 40D) of the sealing resin (40).

[0101] [Supplementary Note 13] The semiconductor device according to Supplementary Note 12, wherein the plurality of terminals (30) include a side surface conductive film (35) covering the exposed side surface (30AA).

[0102] [Supplementary Note 14] The semiconductor device according to any one of Supplementary Notes 1 to 13, wherein the plurality of terminals (30) contain Cu.

[0103] [Supplementary Note 15] The semiconductor device according to any one of Supplementary Notes 1 to 14, wherein the plurality of terminals (30) are configured by a metal lead frame.

[0104] [Supplementary Note 16] A method for manufacturing a semiconductor device, comprising: preparing a plurality of terminals (30); mounting a semiconductor chip (20) on the plurality of terminals (30); and forming a sealing resin (40) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein preparing the plurality of terminals (30) comprises: preparing a metal plate (820) including a front surface (820S) and a back surface (820R) facing opposite to the front surface (820S); and selectively removing the metal plate (820) by etching from both the front surface (820S) and the back surface (820R), wherein the selective removal of the metal plate (820) forms a tip surface (32A) that is an end surface in a first direction perpendicular to a thickness direction (Z direction) of the metal plate (820), and a protrusion portion (37) located in a middle portion of the tip surface (32A) in the thickness direction (Z direction).

[0105] [Supplementary Note 17] The method for manufacturing a semiconductor device according to Supplementary Note 16, wherein preparing the plurality of terminals (30) includes forming a recess (821) by etching a part of the surface (820S).

[0106] [Supplementary Note 18] The method for manufacturing a semiconductor device according to Supplementary Note 17, wherein selectively removing the metal plate (820) includes further etching the recess (821) from the surface (820S) side.

[0107] [Supplementary Note 19] The method for manufacturing a semiconductor device according to any one of Supplementary Notes 16 to 18, wherein preparing the plurality of terminals (30) includes etching the back surface (820R) to form: a terminal portion (31) including a terminal back surface (31R) facing the same side as the back surface (820R) in the thickness direction (Z direction); a mounting portion (32) extending from the terminal portion (31) in the first direction; and a step portion (39) formed between the mounting portion (32) and the terminal portion (31) so as to be located closer to the front surface (820S) than the terminal back surface (31R) of the terminal portion (31).

[0108] [Supplementary Note 20] The method for manufacturing a semiconductor device according to Supplementary Note 19, further comprising cleaning the plurality of terminals (30) after forming the mounting portion (32).

[0109] [Appendix 21] A semiconductor device comprising: a plurality of terminals (30) each having a surface (30S) and a back surface (30R) facing opposite to the surface (30S); a semiconductor chip (20) mounted on the surface (30S) of the plurality of terminals (30); and a sealing resin (40) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein the plurality of terminals (30) include: a terminal portion (31) including a terminal back surface (31R) exposed from the sealing resin (40); and a mounting portion (32) extending from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminals (30) and on which the semiconductor chip (20) is mounted, wherein a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TC) of the terminal portion (31) is greater than 1 / 2.

[0110] [Supplementary Note 22] The semiconductor device according to Supplementary Note 21, wherein a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TC) of the terminal portion (31) is 4 / 5 or less.

[0111] [Appendix 23] The semiconductor device according to appendix 21 or 22, wherein a mounting back surface (32R) of the back surface (30R) corresponding to the mounting portion (32) includes a step portion (39) formed between the mounting portion (32) and the terminal portion (31) so as to be positioned closer to the terminal front surface (30S) than the exposed surface (31R) of the terminal portion (31), and a dimension (DZ3) of the step portion (39) in the thickness direction is smaller than a thickness (TB) of the mounting portion (32).

[0112] [Appendix 24] The semiconductor device according to any one of Appendices 5 to 9 or any one of Appendices 21 to 23, wherein a thickness (TB) of the mounting portion (32) is greater than a thickness (TA) of the semiconductor chip (20).

[0113] [Supplementary Note 25] The semiconductor device according to Supplementary Note 24, wherein a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TA) of the semiconductor chip (20) is greater than 1 and is not greater than 1.8.

[0114] [Appendix 26] A method for manufacturing a semiconductor device, comprising: preparing a plurality of terminals (30); mounting a semiconductor chip (20) on the plurality of terminals (30); and forming a sealing resin (40) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein preparing the plurality of terminals (30) comprises forming a terminal portion (31) including a terminal back surface (31R) exposed from the sealing resin (40); and a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30) and on which the semiconductor chip (20) is mounted, and wherein the terminal portion (31) and the mounting portion (32) are formed so that a ratio of a thickness (TB) of the mounting portion (32) to a thickness (TC) of the terminal portion (31) is greater than 1 / 2.

[0115] [Appendix 27] The method for manufacturing a semiconductor device according to Appendix 26, wherein the plurality of terminals (30) are prepared so that the ratio of the thickness (TB) of the mounting portion (32) to the thickness (TC) of the terminal portion (31) is 4 / 5 or less.

[0116] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0117] 10...Semiconductor device 20...Semiconductor chip 20S...Chip surface 20R...Chip back surface 21...Semiconductor substrate 21S...Main body surface 21R...Main body back surface 22...Wiring 23...Insulating layer 24...Chip terminal 24A...Terminal body 24B...Barrier layer 30...Terminal 30C...Corner terminal 30S...Front surface 30R...Back surface 30A...Side surface 30AA...Exposed side surface 31...Terminal portion 31S...Terminal front surface 31R...Terminal back surface 32...Mounting portion 32A...Tip surface 32AS...Front surface end 32AR...Back surface end 32S...Mounting surface 32R...Mounting back surface 33...Terminal connecting portion 34...Back surface plating layer 35...Side surface plating layer 36...Barrier layer 37...Protrusion 37A, 37B...Side surface 39...Step portion 40...Sealing resin 40S...Sealing surface 40R... Sealing back surface 40A to 40D... First to fourth sealing side surfaces 820... Metal plate 820S... Front surface 820R... Back surface 821... Recess 822... Recess 830... Lead frame 840... Resin layer 910S... Front surface resist 910R... Back surface resist 920... Back surface resist 930... Cleaning device 931... Spray nozzle SD... Conductive bonding material TA... Thickness of semiconductor chip TB... Thickness of mounting portion TC... Thickness of terminal portion TD... Thickness of sealing resin covering the mounting back surface L1... Length of terminal portion in first direction L2... Length of mounting portion in first direction DZ1... Distance between mounting surface and protrusion DZ2... Distance between mounting back surface and protrusion DZ3... Dimension in thickness direction of step portion CL... Cutting line

Claims

1. A semiconductor device comprising: a plurality of terminals; a semiconductor chip mounted on the plurality of terminals; and a sealing resin that seals the plurality of terminals and the semiconductor chip, wherein the plurality of terminals include: a back surface at least a portion of which is exposed from the sealing resin; a front surface on which the semiconductor chip is mounted; a tip surface that is provided within the sealing resin and is an end surface in a first direction perpendicular to a thickness direction of the terminals; and a protrusion portion located in the middle of the tip surface in the thickness direction.

2. The semiconductor device according to claim 1, wherein the protrusion is located at the center of the tip surface in the thickness direction.

3. The semiconductor device according to claim 1 or 2, wherein a direction perpendicular to both the first direction and the thickness direction is defined as a second direction, and the protrusion extends over the entire tip surface in the second direction.

4. A semiconductor device according to any one of claims 1 to 3, wherein the protrusion includes two side surfaces facing opposite each other in the thickness direction, and each of the two side surfaces includes a curved surface that curves toward each other toward the tip of the protrusion.

5. A semiconductor device as claimed in any one of claims 1 to 4, wherein the plurality of terminals include a terminal portion including a terminal back surface exposed from the sealing resin of the back surface, and a mounting portion extending from the terminal portion in the first direction within the sealing resin and including the tip surface, and a ratio of a thickness of the mounting portion to a thickness of the terminal portion is greater than 1 / 2.

6. The semiconductor device according to claim 5, wherein the ratio of the thickness of said mounting portion to the thickness of said terminal portion is 4 / 5 or less.

7. The semiconductor device according to claim 5 or 6, wherein the plurality of terminals include a step portion formed between the mounting portion and the terminal portion such that a mounting back surface of the back surface corresponding to the mounting portion is positioned closer to the front surface than the terminal back surface of the terminal portion, and the dimension of the step portion in the thickness direction is smaller than the thickness of the mounting portion.

8. The semiconductor device according to claim 7, wherein the step portion includes a curved surface.

9. The semiconductor device according to claim 7 or 8, wherein the dimension of the step in the thickness direction is smaller than the distance between the back surface of the mounting surface and the protrusion in the thickness direction.

10. The semiconductor device according to any one of claims 5 to 9, wherein the length of said mounting portion in said first direction is longer than the length of said terminal portion in said first direction.

11. The semiconductor device according to any one of claims 5 to 10, wherein the plurality of terminals include a back surface conductive film covering the back surfaces of the terminals.

12. The semiconductor device according to claim 1, wherein the plurality of terminals include exposed side surfaces that are exposed from a sealing side surface of the sealing resin.

13. The semiconductor device according to claim 12, wherein the plurality of terminals include a side conductive film covering the exposed side surfaces.

14. The semiconductor device according to any one of claims 1 to 13, wherein the plurality of terminals contain Cu.

15. The semiconductor device according to any one of claims 1 to 14, wherein the plurality of terminals are formed of a metallic lead frame.

16. A method for manufacturing a semiconductor device comprising: preparing a plurality of terminals; mounting a semiconductor chip on the plurality of terminals; and forming an encapsulating resin for encapsulating the plurality of terminals and the semiconductor chip, wherein preparing the plurality of terminals comprises: preparing a metal plate having a front surface and a back surface facing opposite to the front surface; and selectively removing the metal plate by etching from both the front surface and the back surface, wherein the selective removal of the metal plate forms a tip surface which is an end surface in a first direction perpendicular to the thickness direction of the metal plate, and a protrusion located in the middle of the tip surface in the thickness direction.

17. The method of claim 16, wherein preparing the plurality of terminals includes forming a recess by etching a portion of the surface.

18. The method for manufacturing a semiconductor device according to claim 17, wherein the selective removal of the metal plate includes further etching the recess from the front surface side.

19. A method for manufacturing a semiconductor device according to any one of claims 16 to 18, wherein preparing the multiple terminals includes etching the back surface to form a terminal portion including a back surface of the terminal facing the same side as the back surface in the thickness direction, a mounting portion extending from the terminal portion in the first direction, and a step portion formed between the mounting portion and the terminal portion so as to be located closer to the front surface than the back surface of the terminal.

20. The method for manufacturing a semiconductor device according to claim 19, further comprising cleaning the plurality of terminals after forming the mounting portion.

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