Semiconductor device

Abstract

This semiconductor device comprises: a plurality of terminals that include a terminal obverse surface and a terminal reverse surface facing the opposite side from the terminal obverse surface; a semiconductor chip that is mounted on the plurality of terminals; and an encapsulating resin for encapsulating the plurality of terminals and the semiconductor chip. The plurality of terminals include: a terminal portion that includes a terminal portion reverse surface, which is exposed from the encapsulating resin on the terminal reverse surface; a mounting portion that extends from the terminal portion in a first direction orthogonal to a Z direction, which is the thickness direction of the terminal, and has the semiconductor chip mounted thereon; a groove portion that is provided at least in the mounting portion and extends in the first direction; and wall portions that are positioned at both ends in a second direction orthogonal to both the Z direction and the first direction by the groove portion and extend in the first direction.

Description

Semiconductor Devices

[0001] The present disclosure relates to semiconductor devices.

[0002] Japanese Patent Application Laid-Open No. 2003-124222 discloses a semiconductor device including a lead frame, a semiconductor element including pillars joined to the lead frame by solder, and a resin that seals the semiconductor element.

[0003] Japanese Patent Application Laid-Open No. 2020-188083

[0004] [Summary] However, there is room for improvement in the connection of semiconductor elements.

[0005] A semiconductor device according to one embodiment of the present disclosure comprises a plurality of terminals, each including a terminal surface and a terminal back surface facing opposite the terminal surface, a semiconductor chip mounted on the plurality of terminals, and a sealing resin that seals the plurality of terminals and the semiconductor chip, wherein the plurality of terminals include a terminal portion including a back surface of the terminal portion that is exposed from the sealing resin among the back surfaces of the terminals, a mounting portion extending from the terminal portion in a first direction perpendicular to a thickness direction of the terminal and on which the semiconductor chip is mounted, a groove portion provided in at least the mounting portion and extending in the first direction, and a wall portion positioned at both ends of a second direction perpendicular to both the thickness direction and the first direction by the groove portion and extending in the first direction.

[0006] FIG. 1 is a schematic perspective view of a semiconductor device according to a first embodiment. FIG. 2 is a schematic plan view of the interior of the semiconductor device of FIG. 1. FIG. 3 is a schematic back view of the semiconductor device of FIG. 1. FIG. 4 is a schematic cross-sectional view of the semiconductor device taken along line F4-F4 in FIG. 2. FIG. 5 is a schematic cross-sectional view of the semiconductor device taken along line F5-F5 in FIG. 4. FIG. 6 is a schematic plan view of a plurality of terminals. FIG. 7 is a schematic perspective view of one of the plurality of terminals. FIG. 8 is a schematic plan view showing an exemplary manufacturing process of the semiconductor device according to the first embodiment. FIG. 9 is a schematic plan view showing a manufacturing process subsequent to the process shown in FIG. 8. FIG. 10 is a schematic end view of the lead frame cut along line F10-F10 in FIG. 9, showing a manufacturing process subsequent to the process shown in FIG. 9. FIG. 11 is a schematic plan view showing a manufacturing process subsequent to the process shown in FIG. 10. FIG. 12 is a schematic end view of the semiconductor device cut along line F12-F12 in FIG. 11, showing a manufacturing process subsequent to the process shown in FIG. 11. 13 is a schematic end view showing a manufacturing step subsequent to the step shown in FIG. 12. FIG. 14 is a schematic cross-sectional view showing a manufacturing step subsequent to the step shown in FIG. 13. FIG. 15 is a schematic cross-sectional view of a semiconductor device according to a second embodiment. FIG. 16 is a schematic back view of a plurality of terminals in the semiconductor device according to the second embodiment. FIG. 17 is a schematic cross-sectional view of the semiconductor device taken along line F17-F17 in FIG. 15. FIG. 18 is a schematic cross-sectional view of a semiconductor device according to a third embodiment. FIG. 19 is a schematic cross-sectional view of the semiconductor device taken along line F19-F19 in FIG. 18. FIG. 20 is a schematic cross-sectional view of a semiconductor device according to a fourth embodiment. FIG. 21 is a schematic cross-sectional view of the semiconductor device taken along line F21-F21 in FIG. 20. FIG. 22 is a schematic perspective view of one of the plurality of terminals. FIG. 23 is a schematic cross-sectional view of a semiconductor device according to a fifth embodiment. FIG. 24 is a schematic cross-sectional view of the semiconductor device taken along line F24-F24 in FIG. 23. FIG. 25 is a schematic back view of one of the plurality of terminals. Fig. 26 is a schematic cross-sectional view of a semiconductor device according to a sixth embodiment. Fig. 27 is a schematic cross-sectional view of the semiconductor device taken along line F27-F27 in Fig. 26. Fig. 28 is a schematic cross-sectional view of a semiconductor device according to a seventh embodiment. Fig. 29 is a schematic cross-sectional view of the semiconductor device taken along line F29-F29 in Fig. 28. Fig. 30 is a schematic end view showing an exemplary manufacturing process of the semiconductor device according to the seventh embodiment.Fig. 31 is a schematic end view showing a manufacturing step following the step shown in Fig. 30. Fig. 32 is a schematic end view showing a manufacturing step following the step shown in Fig. 31. Fig. 33 is a schematic end view showing a manufacturing step following the step shown in Fig. 32. Fig. 34 is a schematic end view showing a manufacturing step following the step shown in Fig. 33. Fig. 35 is a schematic perspective view of one of a plurality of terminals in a semiconductor device according to a modified example.

[0007] DETAILED DESCRIPTION Hereinafter, several embodiments of semiconductor devices according to the present disclosure will be described with reference to the accompanying drawings. Note that for simplicity and clarity of description, components shown in the drawings are not necessarily drawn to scale. Also, hatching lines may be omitted in cross-sectional views to facilitate understanding. The accompanying drawings merely illustrate embodiments of the present disclosure and should not be considered to limit the present disclosure.

[0008] The following detailed description includes devices, systems, and methods embodying exemplary embodiments of the present disclosure. This detailed description is merely illustrative in nature and is not intended to limit the embodiments of the present disclosure or the application and uses of such embodiments.

[0009] The phrase "at least one" as used herein means "one or more" of the desired options. As an example, the phrase "at least one" as used herein means "only one option" or "both of two options" when the number of options is two. As another example, the phrase "at least one" as used herein means "only one option" or "any combination of two or more options" when the number of options is three or more.

[0010] As used in this specification, the phrases "the dimensions (depth, width, length, height) of A are equal to the dimensions (depth, width, length, height) of B" or "the dimensions (depth, width, length, height) of A and the dimensions (depth, width, length, height) of B are equal to each other" also include a relationship in which the difference between the dimensions (depth, width, length, height) of A and the dimensions (depth, width, length, height) of B is within 10% of the dimensions (depth, width, length, height) of A, for example.

[0011] First Embodiment [Overall Configuration of Semiconductor Device] The overall configuration of a semiconductor device 10 according to a first embodiment will be described with reference to FIGS. 1 to 5. FIG. 1 schematically illustrates a perspective view of the semiconductor device 10. FIG. 2 schematically illustrates a planar internal structure of the semiconductor device 10. FIG. 3 schematically illustrates a rear surface structure of the semiconductor device 10. FIG. 4 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F4-F4 in FIG. 2. FIG. 5 schematically illustrates a cross-sectional structure of the semiconductor device 10 taken along line F5-F5 in FIG. 4. Note that in FIG. 1, a semiconductor chip 20 (described later) is indicated by a dashed line. In FIG. 2, a sealing resin 50 (described later) is indicated by a two-dot chain line. In FIG. 3, the semiconductor chip 20 is indicated by a two-dot chain line. The term "plan view" used in the present disclosure refers to viewing the semiconductor device 10 or components of the semiconductor device 10 in the Z direction of the X, Y, and Z axes, which are orthogonal to each other, in FIG. 1.

[0012] 1, the semiconductor device 10 includes a semiconductor chip 20, a plurality of terminals 30, and a sealing resin 50. The semiconductor chip 20 is mounted on the plurality of terminals 30. The sealing resin 50 seals the semiconductor chip 20 and the plurality of terminals 30. A portion of each of the plurality of terminals 30 is exposed from the sealing resin 50.

[0013] The sealing resin 50 constitutes the front, back, and side surfaces of the semiconductor device 10. The sealing resin 50 is formed in the shape of a rectangular flat plate with its thickness direction aligned in the Z direction. In other words, it can be said that the semiconductor device 10 is formed in the shape of a rectangular flat plate with its thickness direction aligned in the Z direction.

[0014] The sealing resin 50 includes a sealing front surface 50S and a sealing back surface 50R that face opposite each other in the Z direction, and four sealing side surfaces 50A that connect the sealing front surface 50S and the sealing back surface 50R. The four sealing side surfaces 50A form the side surfaces of the device. The sealing resin 50 is made of, for example, black epoxy resin.

[0015] As shown in FIGS. 2 and 3 , the terminals 30 are formed in a generally flat plate shape with the Z direction as the thickness direction. The terminals 30 are arranged along each of the four sealing side surfaces 50A in a plan view. Each terminal 30 includes a terminal front surface 30S and a terminal back surface 30R facing the opposite side from the terminal front surface 30S. The terminal front surface 30S faces the same side as the sealing surface 50S, and the terminal back surface 30R faces the same side as the sealing back surface 50R. Each terminal 30 is made of a material containing, for example, copper (Cu), aluminum (Al), or the like. In the first embodiment, each terminal 30 is made of a material containing Cu. Each terminal 30 is formed by etching a metal plate containing Cu. The terminals 30 can be considered to be made of a metal lead frame.

[0016] Each terminal 30 includes a terminal portion 31 and a mounting portion 32. In one example, the terminal portion 31 and the mounting portion 32 are integrally formed as a single unit. That is, the terminal portion 31 and the mounting portion 32 are integrally formed from the same metal material.

[0017] The terminal portion 31 includes a terminal portion back surface 31R exposed from the sealing back surface 50R of the sealing resin 50, a terminal portion front surface 31S facing the opposite side to the terminal portion back surface 31R, and a plurality of terminal portion side surfaces 31A connecting the terminal portion front surface 31S and the terminal portion back surface 31R. The terminal portion back surface 31R constitutes a part of the terminal back surface 30R. The terminal portion front surface 31S constitutes a part of the terminal front surface 30S.

[0018] In plan view, each terminal portion 31 is disposed closer to the four sealing side surfaces 50A than the semiconductor chip 20. In other words, each terminal portion 31 is disposed outward than the semiconductor chip 20 in plan view. In this way, the package structure of the semiconductor device 10 is a fanout package.

[0019] The terminal portions 31 of the multiple terminals 30 are arranged along the four sealing side surfaces 50A in a plan view. The terminal portion side surfaces 31A of each terminal portion 31 include side surfaces that are flush with the four sealing side surfaces 50A. These flush side surfaces constitute exposed side surfaces 31AA that are exposed from the four sealing side surfaces 50A.

[0020] A back-side plating layer 34 is formed on the terminal back surface 31R of each terminal portion 31. In other words, the multiple terminals 30 can be considered to include a back-side plating layer 34 covering the terminal back surface 31R of the terminal portion 31. The back-side plating layer 34 is provided so as to protrude from the sealing back surface 50R. Furthermore, a side-side plating layer 35 is formed on the exposed side surface 31AA of each terminal portion 31. In other words, the multiple terminals 30 can be considered to include a side-side plating layer 35 covering the exposed side surface 31AA of the terminal portion 31. The side-side plating layer 35 is provided so as to protrude from the sealing side surface 50A. In the first embodiment, the back-side plating layer 34 and the side-side plating layer 35 are integrated. Each of the back-side plating layer 34 and the side-side plating layer 35 includes at least one of gold (Au), nickel (Ni), tin (Sn), and palladium (Pd), for example. The back surface side plating layer 34 is an example of a "back surface conductive film," and the side surface side plating layer 35 is an example of a "side surface conductive film."

[0021] The mounting portion 32 is provided within the sealing resin 50. The mounting portion 32 extends from the terminal portion 31 in a direction perpendicular to the Z direction. Hereinafter, the direction in which the mounting portion 32 extends in a plan view will be referred to as the "first direction." The mounting portion 32 extends from the terminal portion 31 toward the semiconductor chip 20 in a plan view. The mounting portion 32 is disposed at a position overlapping the semiconductor chip 20 in a plan view. The length of the mounting portion 32 in the first direction is longer than the length of the terminal portion 31 in the first direction. In one example, the length of the mounting portion 32 in the first direction may be 1.5 times or more the length of the terminal portion 31 in the first direction. In one example, the length of the mounting portion 32 in the first direction may be twice or more the length of the terminal portion 31 in the first direction.

[0022] As shown in FIG. 4 , the mounting portion 32 has a thickness thinner than that of the terminal portion 31. The mounting portion 32 includes a mounting portion front surface 32S facing the same side as the terminal portion front surface 31S, and a mounting portion back surface 32R facing the opposite side from the mounting portion front surface 32S. The mounting portion front surface 32S constitutes a part of the terminal front surface 30S, and the mounting portion back surface 32R constitutes a part of the terminal back surface 30R. In one example, the mounting portion front surface 32S is flush with the terminal portion front surface 31S of the terminal portion 31. The terminal portion front surface 31S and the mounting portion front surface 32S constitute the terminal front surface 30S. The terminal back surface 31R and the mounting portion back surface 32R constitute the terminal back surface 30R. The mounting portion 32 also includes a mounting portion side surface 32A connecting the mounting portion front surface 32S and the mounting portion back surface 32R.

[0023] Each of the multiple terminals 30 includes a curved surface 37. The curved surface 37 is provided between the terminal portion 31 and the mounting portion 32. More specifically, the terminal portion 31 includes an inner surface 31AB of the terminal portion side surface 31A that faces the mounting portion 32 in the first direction. The curved surface 37 connects the inner surface 31AB and the mounting portion back surface 32R between the inner surface 31AB and the mounting portion back surface 32R.

[0024] 2 , among the multiple terminals 30, terminals arranged at the four corners of the sealing resin 50 in a plan view (hereinafter referred to as “corner terminals 30C”) include two terminal portions 31. The two terminal portions 31 of each corner terminal 30C are arranged at the same position in the X direction and spaced apart from each other in the Y direction. The two terminal portions 31 are connected by a terminal connecting portion 33.

[0025] As shown in Figures 2 to 4, a semiconductor chip 20 is mounted on the multiple terminals 30. More specifically, the semiconductor chip 20 is mounted on the mounting portion 32 of each terminal 30. The semiconductor chip 20 is formed in the shape of a rectangular flat plate with its thickness direction in the Z direction. The semiconductor chip 20 includes a chip front surface 20S and a chip back surface 20R that face opposite each other in the Z direction. The chip front surface 20S is the surface that faces the mounting portion front surface 32S of the mounting portion 32. The chip back surface 20R is the surface that faces the same side as the mounting portion front surface 32S.

[0026] The semiconductor chip 20 includes a semiconductor substrate 21 that constitutes the chip body. The semiconductor substrate 21 is made of a material containing, for example, silicon (Si). The semiconductor chip 20 is, for example, an LSI (Large Scale Integration).

[0027] 4, the semiconductor substrate 21 includes a front surface 21S and a back surface 21R that face opposite each other in the Z direction. The front surface 21S faces the same side as the chip front surface 20S of the semiconductor chip 20. The back surface 21R faces the same side as the chip back surface 20R. In the example shown in FIG. 4, the back surface 21R constitutes the chip back surface 20R.

[0028] 4 and 5 , the semiconductor chip 20 includes a plurality of wirings 22 provided on a main body surface 21S of the semiconductor substrate 21, and an insulating layer 23 covering the main body surface 21S. The plurality of wirings 22 are provided at positions facing the mounting portions 32 of the plurality of terminals 30 of the semiconductor substrate 21 in the Z direction. The insulating layer 23 includes a plurality of openings that individually expose the plurality of wirings 22 in the Z direction. The plurality of wirings 22 are made of a material including at least one of Al, Cu, Au, and titanium (Ti).

[0029] 5, the semiconductor chip 20 includes a plurality of chip terminals 24 formed on the chip surface 20S. The plurality of chip terminals 24 are individually bonded to a plurality of wirings 22. More specifically, the chip terminals 24 are bonded to portions of the wirings 22 that are exposed through openings in the insulating layer 23. The chip terminals 24 are formed in a cylindrical shape extending from the wirings 22 in the Z direction.

[0030] The chip terminal 24 includes a cylindrical terminal body 24A and a barrier layer 24B provided on the tip surface of the terminal body 24A. The chip terminal 24 includes at least one of Cu, Al, and Ti, for example. The barrier layer 24B is, for example, a plating layer. The barrier layer 24B includes at least one of Au, Ni, and Pd. In one example, the barrier layer 24B is made of a material containing Ni.

[0031] A barrier layer 36 is provided in the region of the mounting portion 32 of each terminal 30 to which the chip terminal 24 is connected. The region to which the chip terminal 24 is connected can also be referred to as the region to which the semiconductor chip 20 is mounted. In one example, the barrier layer 36 is formed in a circular shape in a plan view. Note that the shape of the barrier layer 36 in a plan view can be changed as desired. The barrier layer 36 includes, for example, at least one of Ni and Ti.

[0032] The barrier layer 24B of each chip terminal 24 and the barrier layer 36 of the mounting portion 32 corresponding to that barrier layer 24B are bonded together by a conductive bonding material SD. As a result, it can be said that the semiconductor chip 20 is mounted on the multiple mounting portions 32. The barrier layer 36 is a layer that suppresses a decrease in the wettability of the conductive bonding material SD. In this way, the multiple chip terminals 24 are electrically connected to the mounting portions 32 of the multiple terminals 30. Here, the conductive bonding material SD may be, for example, silver (Ag) paste or solder paste.

[0033] [Groove Portion of Terminal] As shown in Fig. 4, each terminal 30 includes a groove portion 40. The configuration of the groove portion 40 of the terminal 30 will be described below with reference to Figs. 4 to 7. Fig. 6 schematically shows the planar structure of multiple terminals 30. Fig. 7 schematically shows the perspective structure of one terminal 30.

[0034] As shown in FIGS. 4 to 7 , the groove 40 is provided at least in the mounting portion 32. The groove 40 is located between both ends in a direction (hereinafter referred to as the "second direction") perpendicular to both the first direction and the Z direction. The groove 40 extends in the first direction in the mounting portion 32. Here, the first direction can be said to be the length direction of the mounting portion 32. The second direction can be said to be the width direction of the mounting portion 32. Furthermore, the first direction can be said to be the length direction of the groove 40. The second direction can be said to be the width direction of the groove 40.

[0035] As shown in FIGS. 4 and 5 , the groove 40 is recessed from the terminal front surface 30S toward the terminal back surface 30R. More specifically, the portion of the groove 40 formed in the mounting portion 32 is recessed from the mounting front surface 32S toward the mounting back surface 32R. The portion of the groove 40 formed in the terminal portion 31 is recessed from the terminal front surface 31S toward the terminal back surface 31R. As shown in FIG. 4 , the portion of the mounting portion 32 where the groove 40 is provided is smaller than half the thickness of the terminal portion 31. In other words, the mounting portion 32 includes a portion thinner than half the thickness of the terminal portion 31. Here, the thickness of the terminal portion 31 can be defined as the distance between the terminal front surface 31S and the terminal back surface 31R in the Z direction.

[0036] Each terminal 30 includes a wall portion 60 formed by the groove portion 40 being recessed from the terminal front surface 30S toward the terminal back surface 30R. The wall portions 60 are provided on both sides of the terminal 30 in the second direction. The wall portions 60 extend in the first direction.

[0037] The mounting portion 32 has a groove 40 formed therein, which forms the mounting portion 32 in a U-shape when viewed from the first direction. The groove 40 is recessed from the mounting portion surface 32S toward the mounting portion back surface 32R, so that the mounting portion 32 includes a base portion 32P and a wall portion 32Q rising from the base portion 32P. In the first embodiment, the base portion 32P and the wall portion 32Q are integrally formed as a single unit. The wall portion 32Q extends in the first direction at both ends of the mounting portion 32 in the second direction. The wall portion 32Q constitutes a part of the wall portion 60. The base portion 32P includes the mounting portion back surface 32R. The wall portion 32Q includes the mounting portion surface 32S.

[0038] Because the groove 40 is recessed from the terminal surface 31S toward the terminal back surface 31R, the terminal 31 includes a wall 31Q (see FIG. 7 ) that continues from the wall 32Q of the mounting portion 32. The wall 31Q forms a part of the wall 60. The wall 31Q includes the terminal surface 31S. In the first embodiment, the wall 31Q and the wall 32Q are integrally formed as a single unit. In other words, the wall 60 is formed by the walls 31Q and 32Q. The wall 60 is configured to include the terminal surface 30S.

[0039] As shown in FIG. 6 , the groove 40 extends from the terminal 31 to the tip of the mounting portion 32. In the first embodiment, the groove 40 is located closer to the terminal 31 than the tip edge of the mounting portion 32. That is, the groove 40 formed in the mounting portion 32 does not open in the first direction. Therefore, as shown in FIG. 7 , the mounting portion 32 includes a tip-side connecting wall 61 at the tip of the mounting portion 32 that connects the wall portions 32Q (wall portions 60) provided on both sides of the mounting portion 32 in the second direction. The tip-side connecting wall 61 is formed in a semicircular shape in a plan view, similar to the tip of the mounting portion 32. The tip-side connecting wall 61 includes the mounting portion surface 32S.

[0040] The groove 40 extends across both the terminal portion 31 and the mounting portion 32. The groove 40 is located closer to the mounting portion 32 than the end of the terminal portion 31 opposite the mounting portion 32 in the first direction. In other words, the groove 40 is located closer to the mounting portion 32 than the exposed side surface 31AA of the terminal portion 31 in a plan view. In other words, the groove 40 formed in the terminal portion 31 does not open in the first direction. Therefore, as shown in FIG. 7 , the terminal portion 31 includes a base-end connecting wall 62 that connects the wall portions 31Q (wall portions 60) provided on both sides of the terminal portion 31 in the second direction. The base-end connecting wall 62 includes the terminal portion surface 31S.

[0041] As shown in FIGS. 5 and 7 , the groove 40 includes a side surface 41 and a bottom surface 42. As shown in FIG. 7 , the side surface 41 extends from the terminal front surface 30S toward the terminal back surface 30R. The side surface 41 extends along the first direction. A tip side surface 41A of the side surface 41, which constitutes the tip of the groove 40 in the first direction, has the same shape as the tip surface of the mounting portion 32 in a plan view, for example. In one example, the tip side surface 41A is formed in a semicircular shape in a plan view. A base side surface 41B of the side surface 41, which constitutes the base end of the groove 40 in the first direction, extends along the second direction in a plan view, for example. A curved side surface 41C, which is curved in a plan view, is formed between the base side surface 41B and the side surface 41 extending in the first direction. The side surface 41 constitutes the inner surface of the wall portion 60. The tip side surface 41A constitutes the inner surface of the tip-side connecting wall 61. The base side surface 41B constitutes the inner surface of the base-side connecting wall 62.

[0042] As shown in FIG. 5 , the bottom surface 42 is formed, for example, by a flat surface perpendicular to the Z direction. The bottom surface 42 constitutes the surface of the base portion 32P facing away from the mounting portion back surface 32R. The bottom surface 42 includes an area where the chip terminals 24 of the semiconductor chip 20 are mounted on the mounting portion 32. A barrier layer 36 is formed on the bottom surface 42. The barrier layer 36 can be said to be located closer to the mounting portion back surface 32R than to the mounting portion front surface 32S in the Z direction. The thickness of the barrier layer 36 is thinner than the depth H1 of the groove portion 40. A conductive bonding material SD is provided in the groove portion 40. The chip terminals 24 can be said to be bonded to the mounting portion 32 within the groove portion 40. The chip terminals 24 can also be said to be bonded to the bottom surface 42 within the groove portion 40.

[0043] The depth H1 of the groove 40 is equal to or greater than the thickness T1 of the conductive bonding material SD. The tip surface of the chip terminal 24, in other words, the surface of the barrier layer 24B that contacts the conductive bonding material SD, may be located at the same position as the mounting surface 32S in the Z direction, or closer to the mounting back surface 32R than the mounting surface 32S. In other words, when the depth H1 of the groove 40 is equal to the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is located at the same position as the mounting surface 32S in the Z direction. When the depth H1 of the groove 40 is shallower than the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is closer to the sealing surface 50S (see FIG. 4) than the mounting surface 32S in the Z direction. Furthermore, when the depth H1 of the groove 40 is greater than the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is closer to the back surface 32R of the mounting portion than to the front surface 32S of the mounting portion in the Z direction. In one example, the depth H1 of the groove 40 is 10 μm or less. The depth H1 of the groove 40 can be defined as the distance between the terminal surface 30S and the bottom surface 42 of the groove 40 in the Z direction. Therefore, the depth H1 of the groove 40 is equivalent to the height of the wall 60.

[0044] As shown in FIG. 5 , the groove 40 includes a curved surface 43 between the side surface 41 and the bottom surface 42. Therefore, the width of the bottom surface 42 is smaller than the distance between the pair of side surfaces 41 in the second direction. Here, the width of the bottom surface 42 can be defined by the dimension of the bottom surface 42 in the second direction. The width of the bottom surface 42 is larger than the diameter of the chip terminal 24. Therefore, it can be said that the width W1 of the groove 40 is larger than the diameter of the chip terminal 24 of the semiconductor chip 20. The width W1 of the groove 40 can be defined, for example, by the distance between the pair of side surfaces 41 in the second direction. The width W1 of the groove 40 is larger than ½ of the width W2 of the mounting portion 32. In one example, the width W1 of the groove 40 is approximately ⅔ of the width W2 of the mounting portion 32.

[0045] 6, the length L1 of the groove 40 may be equal to or greater than the length L2 of the mounting portion 32. In one example, the length L1 of the groove 40 is longer than the length L2 of the mounting portion 32. The length L2 of the mounting portion 32 can be defined as the distance from the inner surface 31AB of the terminal portion 31 to the tip surface of the mounting portion 32 in the direction in which the mounting portion 32 extends in a plan view.

[0046] [Method of Manufacturing Semiconductor Device] An example of a method of manufacturing the semiconductor device 10 of the first embodiment will be described with reference to FIGS.

[0047] The manufacturing method of the semiconductor device 10 mainly includes the steps of preparing a plurality of terminals 30, mounting a semiconductor chip 20 on the plurality of terminals 30, cleaning the plurality of terminals 30, forming a sealing resin 50, and singulating.

[0048] 8 to 10 show an example of a process for preparing a plurality of terminals 30. Fig. 8 and Fig. 9 schematically show the planar structure of a portion of a lead frame 830. Fig. 10 shows the end face structure cut along line F10-F10 in Fig. 9.

[0049] As shown in FIG. 8 , in the step of preparing the plurality of terminals 30, a metal lead frame 830 is prepared. In this step, a flat metal plate is first prepared. The metal plate is a member for forming the plurality of terminals 30. Next, a front-side resist is formed on the front surface of the metal plate, and a back-side resist is formed on the back surface of the metal plate. The front-side resist covers the portions of the front surface of the metal plate corresponding to the terminal portions 31 and mounting portions 32 of the plurality of terminals 30. Therefore, the front-side resist exposes the portions of the front surface of the metal plate other than the portions corresponding to the plurality of terminals 30. The back-side resist covers the portions of the back surface of the metal plate corresponding to the terminal portions 31 of the plurality of terminals 30. Therefore, the back-side resist exposes the portions of the back surface of the metal plate other than the portions corresponding to the plurality of terminals 30 and the portion corresponding to the mounting portion 32. Next, the portions of the back surface of the metal plate other than the portions corresponding to the plurality of terminals 30 and the portion corresponding to the mounting portion 32 are partially removed in the Z direction by, for example, half etching. Next, the portions of the front surface of the metal plate other than the portions corresponding to the plurality of terminals 30 are removed by, for example, half etching. After that, the front and back resists are removed. Through the above steps, the lead frame 830 is manufactured.

[0050] The lead frame 830 is formed in a flat plate shape with its thickness aligned in the Z direction. The lead frame 830 is made of a material containing, for example, Cu. The lead frame 830 includes a plurality of lead portions 831 corresponding to the plurality of terminals 30 and a frame portion (not shown) that supports the plurality of lead portions 831. The lead frame 830 is formed by etching a metal plate containing, for example, Cu. The lead portions 831 extend in a direction (first direction) perpendicular to the Z direction. The lead portions 831 include a lead front surface 831S and a lead back surface 831R (see FIGS. 9 and 10 ) that face opposite each other in the Z direction. The process of preparing the plurality of terminals 30 includes selectively etching the lead portions 831 to form the terminal portions 31 and the mounting portions 32. As a result, the lead portions 831 include the terminal portions 31 and the mounting portions 32 of the plurality of terminals 30. In FIG. 8 , for convenience, the boundary between the terminal portions 31 and the mounting portions 32 is indicated by a dashed line.

[0051] 9 , the step of preparing the plurality of terminals 30 includes a step of etching each lead portion 831 to form a groove portion 40 in each lead portion 831. In the step of preparing the plurality of terminals 30 in the first embodiment, the groove portion 40 is formed after the mounting portion 32 is formed.

[0052] The grooves 40 are partially formed in at least the regions of each lead 831 corresponding to the mounting portions 32. Therefore, the process of preparing the multiple terminals 30 can be said to include a process of forming the grooves 40 by etching at least the regions of the lead frame 830 corresponding to the mounting portions 32. In one example, the regions of the lead frame 830 corresponding to the terminal surface 31S of the terminal 31 and the mounting surface 32S of the mounting portion 32, except for the regions where the grooves 40 are formed, are covered with resist. Subsequently, the regions exposed from the resist are etched. In one example, the resist covers both ends of the mounting portion 32 of the lead 831 in a second direction perpendicular to both the first direction and the Z direction and both ends of the terminal 31 in the second direction. As a result, the grooves 40 are located between both ends of the regions of the lead 831 corresponding to the terminals 30 in the second direction. Here, the second direction can be said to be the width direction of the lead 831. The grooves 40 are formed to extend in the first direction. In the first embodiment, the groove 40 is formed in a portion of the lead portion 831 that corresponds to both the terminal portion 31 and the mounting portion 32 .

[0053] As shown in FIG. 10 , the groove 40 is formed by at least partially etching the mounting portion 32 from the lead surface 831S. That is, the step of preparing the plurality of terminals 30 includes forming the groove 40 by at least partially etching the mounting portion 32 from the lead surface 831S. In the first embodiment, the groove 40 is formed by partially etching both the terminal portion 31 and the mounting portion 32 from the lead surface 831S. That is, forming the groove 40 includes forming the groove 40 so as to be recessed from the mounting portion surface 32S, which is a region of the lead frame 830 corresponding to the mounting portion 32, toward the mounting portion back surface 32R. Furthermore, forming the groove 40 includes forming the groove 40 so as to be recessed from the terminal portion surface 31S, which is a region of the lead frame 830 corresponding to the terminal portion 31, toward the terminal portion back surface 31R.

[0054] 9 and 10 , by forming the groove 40, the mounting portion 32 includes a base portion 32P, a wall portion 32Q (wall portion 60) rising from the base portion 32P, and a tip-side connecting wall 61. Furthermore, the portion of the lead portion 831 corresponding to the terminal portion 31 includes a base-side connecting wall 62. The wall portions 32Q are formed on both ends of the mounting portion 32 in the second direction, so that the mounting portion 32 includes a portion formed in a U-shape when viewed from the first direction. The wall portions 32Q extend in the first direction.

[0055] Furthermore, the groove 40 forms a wall 31Q in the region of the lead 831 that corresponds to the terminal 31. The wall 31Q is formed at both ends of the terminal 31 in the second direction. The wall 31Q extends in the first direction. In this manner, in this process, the wall 60 is formed, which is composed of the wall 31Q and the wall 32Q. The wall 60 extends in the first direction.

[0056] 11 and 12 show an example of a process for mounting a semiconductor chip 20 on a plurality of terminals 30. Fig. 11 schematically shows the planar structure of a portion of a lead frame 830 and the semiconductor chip 20. Fig. 12 schematically shows the end surface structure of the portion of the lead frame 830 and the semiconductor chip 20 cut along line F12-F12 in Fig. 11.

[0057] In the process of mounting the semiconductor chip 20 on the multiple terminals 30, first, the multiple chip terminals 24 of the semiconductor chip 20 are placed on the multiple terminals 30. More specifically, first, a conductive bonding material SD is applied to each chip terminal 24 of the semiconductor chip 20. Next, each chip terminal 24 of the semiconductor chip 20 is placed on a barrier layer 36 formed on the bottom surface 42 of the groove portion 40 in the mounting portion 32 of each terminal 30. Next, the conductive bonding material SD is melted by, for example, a reflow process, and then solidified. As a result, the multiple chip terminals 24 are bonded to the multiple terminals 30. As a result, the multiple chip terminals 24 are electrically connected to the multiple terminals 30.

[0058] In the process of mounting the semiconductor chip 20 on the plurality of terminals 30, a layer of conductive bonding material SD may be formed on the barrier layer 36, and then each chip terminal 24 of the semiconductor chip 20 may be placed on the conductive bonding material SD. In the process of mounting the semiconductor chip 20 on the plurality of terminals 30, a layer of conductive bonding material SD may be formed on both the barrier layer 36 and each chip terminal 24, and then the semiconductor chip 20 may be placed on the mounting portion 32 so that the conductive bonding material SD on the barrier layer 36 and the conductive bonding material SD of each chip terminal 24 are bonded to each other.

[0059] 13 shows an example of a process for cleaning the plurality of terminals 30 and the semiconductor chip 20. FIG. 13 shows a schematic diagram of an end face structure in a state where the semiconductor chip 20 is mounted on the plurality of terminals 30.

[0060] 13 , the lead frame 830 on which the semiconductor chip 20 is mounted is carried into, for example, a cleaning device 900 while being supported by a support substrate 860. The cleaning device 900 includes a plurality of spray nozzles 910. Each spray nozzle 910 is configured to spray pure water and chemicals onto the semiconductor chip 20 and the lead frame 830. This cleans and removes foreign matter and dirt adhering to the semiconductor chip 20 and the lead frame 830. In this way, the process of cleaning the plurality of terminals 30 and the semiconductor chip 20 is performed after the groove portion 40 is formed. This process is also performed after the process of mounting the semiconductor chip 20.

[0061] 14 shows the steps of forming the sealing resin 50 and the step of dividing the sealing resin 50. FIG. 14 shows a schematic cross-sectional structure of a part of the lead frame 830, the semiconductor chip 20, and the sealing resin 50 cut away.

[0062] In the step of forming the sealing resin 50, a resin layer 850 is formed by, for example, transfer molding so as to cover the semiconductor chip 20 and the lead frame 830. The resin layer 850 includes a plurality of sealing resins 50.

[0063] Next, in the singulation step, the resin layer 850 and the lead frame 830 are cut along the cutting lines CL in FIG. 14 by, for example, dicing. This forms a plurality of sealing resins 50 and a plurality of terminals 30. Then, terminal portion side surfaces 31A (see FIG. 4) of the terminal portions 31 of the plurality of terminals 30 are exposed from four sealing side surfaces 50A (see FIG. 2) of the sealing resin 50.

[0064] Next, although not shown, the manufacturing method of semiconductor device 10 includes a process of forming back-side plating layer 34 and side-side plating layer 35 (see FIG. 4 ). Both back-side plating layer 34 and side-side plating layer 35 are formed by, for example, electroless plating. As a result, back-side plating layer 34 is formed on terminal portion back surfaces 31R of multiple terminals 30 exposed from sealing resin 50, and side-side plating layer 35 is formed on exposed side surfaces 31AA. Through the above processes, semiconductor device 10 is manufactured.

[0065] [Operation of First Embodiment] The operation of the semiconductor device 10 of the first embodiment will be described. Note that a semiconductor device including a terminal 30 having a configuration in which the groove portion 40 is omitted from the semiconductor device 10 of the first embodiment will be referred to as a "comparative semiconductor device."

[0066] The mounting portion of the multiple terminals in the semiconductor device of the comparative example is formed in a flat plate shape. Therefore, during the process of cleaning the multiple terminals and the semiconductor chip, the mounting portion vibrates in the Z direction due to the sprayed pure water and chemicals. This applies force to the conductive bonding material that bonds the mounting portion to the semiconductor chip, which may cause the conductive bonding material SD to crack or peel off. As a result, the electrical connection between the mounting portion and the chip terminals of the semiconductor chip may become unstable.

[0067] In this regard, in the semiconductor device 10 of the first embodiment, grooves 40 are provided in at least the mounting portions 32 of the multiple terminals 30. As a result, the mounting portions 32 include a base portion 32P and wall portions 32Q (wall portions 60) rising from both sides of the base portion 32P in the second direction. That is, when viewed from the first direction, the mounting portions 32 are formed in a U-shape. As a result, according to the semiconductor device 10 of the first embodiment, the mounting portions 32 are less likely to bend compared to a configuration without the grooves 40, in other words, a configuration without the wall portions 32Q (wall portions 60). Therefore, during the process of cleaning the multiple terminals 30 and the semiconductor chip 20, vibration of the mounting portions 32 in the Z direction due to sprayed pure water and chemicals can be suppressed. As a result, force is less likely to be applied to the conductive bonding material SD that bonds the mounting portions 32 to the chip terminals 24 of the semiconductor chip 20, thereby suppressing cracking and peeling of the conductive bonding material SD. Therefore, the electrical connection between the mounting portion 32 and the chip terminal 24 is stable.

[0068] Effects of First Embodiment The semiconductor device 10 of the first embodiment provides the following effects. (1-1) The semiconductor device 10 includes a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing opposite the terminal front surface 30S, a semiconductor chip 20 mounted on the plurality of terminals 30, and a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. The plurality of terminals 30 include terminal portions 31, each including a terminal portion back surface 31R of the terminal back surface 30R that is exposed from the sealing resin 50, a mounting portion 32 that extends from the terminal portion 31 in a first direction that is orthogonal to the Z direction, which is the thickness direction of the terminals 30, and on which the semiconductor chip 20 is mounted, a groove portion 40 that is provided in at least the mounting portion 32 and extends in the first direction, and wall portions 60 that are positioned at both ends in a second direction that is orthogonal to both the Z direction and the first direction and that are formed by the groove portion 40 and extend in the first direction.

[0069] According to this configuration, the provision of the wall portion 60 in the mounting portion 32 makes the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall portion 60. This makes it possible to prevent the mounting portion 32 from vibrating in the Z direction due to the sprayed pure water and chemicals during the process of cleaning the multiple terminals 30 and the semiconductor chip 20. Therefore, the application of force to the conductive bonding material SD due to vibration of the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0070] (1-2) The groove 40 extends from the terminal 31 to the tip of the mounting portion 32. With this configuration, the area of ​​the mounting portion 32 where the groove 40 is provided in the first direction, in other words, the area of ​​the mounting portion 32 where the wall 60 is provided in the first direction, is larger. This makes the mounting portion 32 less likely to bend. Therefore, in the process of cleaning the multiple terminals 30 and the semiconductor chip 20, it is possible to suppress vibration of the mounting portion 32 in the Z direction due to the sprayed pure water and chemicals.

[0071] (1-3) The groove 40 extends over both the terminal portion 31 and the mounting portion 32. With this configuration, it can be said that the wall portion 60 is provided over both the terminal portion 31 and the mounting portion 32. This makes it difficult for the mounting portion 32 to bend at the end of the mounting portion 32 that is closer to the terminal portion 31. Therefore, in the process of cleaning the multiple terminals 30 and the semiconductor chip 20, it is possible to suppress vibration of the mounting portion 32 in the Z direction due to the sprayed pure water and chemicals.

[0072] (1-4) The groove portion 40 includes a side surface 41, a bottom surface 42, and a curved surface 43 that is provided between the side surface 41 and the bottom surface 42 and curves inward toward the mounting portion 32 as it approaches the bottom surface 42.

[0073] With this configuration, stress concentration at the connection portion between the side surface 41 and the bottom surface 42 can be suppressed compared to a configuration in which the curved surface 43 is omitted, for example, in which the side surface 41 and the bottom surface 42 are connected perpendicularly. Therefore, cracking or deformation of the portion of the mounting portion 32 that forms the side surface 41 of the groove portion 40 can be suppressed. In addition, adhesion of the sealing resin 50 at the connection portion between the side surface 41 and the bottom surface 42 can be improved compared to a configuration in which the side surface 41 and the bottom surface 42 are connected perpendicularly. Therefore, peeling between the sealing resin 50 and the mounting portion 32 can be suppressed.

[0074] (1-5) The depth H1 of the groove 40 is 10 μm or less. This configuration prevents the portion of the mounting portion 32 where the groove 40 is provided from becoming excessively thin. Therefore, the strength of the mounting portion 32 is prevented from decreasing excessively, making the mounting portion 32 less likely to bend.

[0075] (1-6) The length of the mounting portion 32 in the first direction is longer than the length of the terminal portion 31 in the first direction. This configuration enables the miniaturization of the semiconductor device 10 in a direction perpendicular to the Z direction and realizes a Fanout package structure. On the other hand, as the length of the mounting portion in the first direction increases, the mounting portion becomes more likely to bend. However, by providing the wall portion 60 in the mounting portion 32, the mounting portion 32 becomes less likely to bend even if the mounting portion 32 becomes longer in the first direction.

[0076] (1-7) The terminal portion 31 includes an exposed side surface 31AA that is exposed from the sealing side surface 50A of the sealing resin 50. A side surface-side plating layer 35, which is a side surface conductive film, is provided on the exposed side surface 31AA.

[0077] According to this configuration, when the semiconductor device 10 is mounted on a circuit board using a conductive bonding material such as solder paste, the conductive bonding material adheres to the side plating layer 35. Therefore, the state of mounting of the semiconductor device 10 on the circuit board can be visually confirmed.

[0078] (1-8) A method for manufacturing a semiconductor device 10 includes preparing a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing opposite the terminal front surface 30S, mounting a semiconductor chip 20 on the plurality of terminals 30, and forming a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. The method also includes forming the plurality of terminals 30 with terminal portions 31 and mounting portions 32 that extend from the terminal portions 31 in a first direction perpendicular to the Z direction, which is the thickness direction of the terminals 30, and on which the semiconductor chip 20 is mounted, and etching at least the mounting portions 32 to form groove portions 40 that extend in the first direction in the mounting portions 32. The groove portions 40 form wall portions 60 that extend in the first direction on both ends of the terminals 30 in a second direction perpendicular to both the Z direction and the first direction.

[0079] According to this configuration, the wall 60 is provided in the mounting portion 32, making the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall 60. Therefore, the application of force to the conductive bonding material SD due to the application of an external force to the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0080] (1-9) The manufacturing method for the semiconductor device 10 includes cleaning the plurality of terminals 30 after forming the grooves 40. According to this configuration, the grooves 40 are provided in the mounting portion 32, in other words, the walls 60 of the mounting portion 32 are provided, so that vibration of the mounting portion 32 in the Z direction due to the sprayed pure water and chemicals can be suppressed in the process of cleaning the plurality of terminals 30. Therefore, force applied to the conductive bonding material SD due to vibration of the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0081] 15 to 17, a semiconductor device 10 according to a second embodiment will be described. The semiconductor device 10 according to the second embodiment differs from the semiconductor device 10 according to the first embodiment mainly in the configuration of the plurality of terminals 30, particularly the positions of the grooves 40. Below, differences from the semiconductor device 10 according to the first embodiment will be described in detail, and components common to the semiconductor device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0082] [Configuration of Semiconductor Device] Fig. 15 schematically shows the cross-sectional structure of the semiconductor device 10 of the second embodiment. The cross-sectional position in Fig. 15 is the same as the cross-sectional position in Fig. 4. Fig. 16 schematically shows the back surface structure of multiple terminals 30. Fig. 17 schematically shows a part of the cross-sectional structure of the semiconductor device 10 of the second embodiment taken along line F17-F17 in Fig. 15.

[0083] 15 , in the second embodiment, the groove 40 is provided on the mounting portion back surface 32R side of the mounting portion 32. The groove 40 is recessed from the mounting portion back surface 32R toward the terminal surface 30S (mounting portion front surface 32S). The portion of the mounting portion 32 where the groove 40 is provided is smaller than half the thickness of the terminal portion 31. In other words, the mounting portion 32 includes a portion that is thinner than half the thickness of the terminal portion 31.

[0084] In the second embodiment, the groove 40 is not provided in the terminal portion 31. That is, the groove 40 is provided only in the mounting portion 32. The groove 40 is located between both ends of the mounting portion 32 in a second direction that is perpendicular to both the first direction and the Z direction. The groove 40 extends in the first direction in the mounting portion 32.

[0085] 17 , each terminal 30 includes a wall portion 60 formed by the groove portion 40 being recessed from the terminal back surface 30R toward the terminal front surface 30S. The wall portions 60 are provided on both sides of the terminal 30 in the second direction. The wall portions 60 extend in the first direction.

[0086] The groove 40 provided in the mounting portion 32 forms a U-shape that opens toward the sealing back surface 50R when viewed from the first direction. Because the groove 40 is recessed from the mounting back surface 32R toward the mounting front surface 32S, the mounting portion 32 includes a base portion 32P and a wall portion 32Q that extends downward from the base portion 32P. In the second embodiment, the base portion 32P and the wall portion 32Q are integrally formed as a single unit. The wall portion 32Q extends in the first direction at both ends of the mounting portion 32 in the second direction. The wall portion 32Q constitutes a part of the wall portion 60. The base portion 32P includes the mounting front surface 32S. The wall portion 32Q includes the mounting back surface 32R. In the second embodiment, the wall portion 60 is constituted by the wall portion 32Q.

[0087] In the second embodiment, the groove 40 is not provided on the mounting portion surface 32S side of the mounting portion 32. That is, in the second embodiment, the mounting portion surface 32S is configured as a flat surface perpendicular to the Z direction. A semiconductor chip 20 is mounted on the mounting portion surface 32S. More specifically, a barrier layer 36 is provided in an area of ​​the mounting portion surface 32S where the chip terminals 24 of the semiconductor chip 20 are arranged (an area where the semiconductor chip 20 is mounted). The chip terminals 24 and the barrier layer 36 are joined by a conductive bonding material SD.

[0088] As shown in FIG. 16 , a groove 40 is provided in each of the multiple terminals 30. The groove 40 is located closer to the terminal portion 31 than the distal end edge of the mounting portion 32. In other words, the groove 40 in the second embodiment does not open in the first direction, which is the extension direction of the mounting portion 32. Therefore, the mounting portion 32 includes a distal connecting wall 61 at the distal end of the mounting portion 32 that connects the wall portions 32Q (wall portions 60) provided on both sides of the mounting portion 32 in the second direction. The distal connecting wall 61 is formed in a semicircular shape similar to the distal end of the mounting portion 32 in a plan view. The distal connecting wall 61 includes a mounting portion back surface 32R. Furthermore, the mounting portion 32 includes a base end connecting wall 62 at the proximal end of the mounting portion 32 that connects the wall portions 32Q (wall portions 60) provided on both sides of the mounting portion 32 in the second direction. The base end connecting wall 62 includes the mounting portion back surface 32R.

[0089] As shown in FIG. 17 , the groove 40 includes a side surface 44 and a bottom surface 45. As shown in FIG. 16 , the side surface 44 extends from the mounting portion rear surface 32R toward the mounting portion front surface 32S. The side surface 44 extends along the first direction. A distal side surface 44A of the side surface 44, which constitutes the distal end of the groove 40 in the first direction, has the same shape as the distal end surface of the mounting portion 32 in a plan view, for example. In one example, the distal side surface 44A is formed in a semicircular shape in a plan view. A proximal side surface 44B of the side surface 44, which constitutes the proximal end of the groove 40 in the first direction, extends along the inner surface 31AB of the terminal portion 31 in a plan view, for example. A curved side surface is formed between the proximal side surface 44B and the side surface 44 extending in the first direction. The bottom surface 45 is formed by a flat surface, for example, perpendicular to the Z direction. The side surface 44 constitutes the inner surface of the wall portion 60. The distal side surface 44A constitutes the inner surface of the distal connecting wall 61. The proximal side surface 44B constitutes the inner surface of the proximal connecting wall 62.

[0090] 17, the depth H2 of the groove 40 can be changed as desired within a range that makes the mounting portion less prone to bending than a mounting portion that does not have the groove 40. In one example, the depth H2 of the groove 40 is equal to the depth H1 of the groove 40 in the first embodiment (see FIG. 5). Therefore, it can be said that the height of the wall 60 in the second embodiment is equal to the height of the wall 60 in the first embodiment.

[0091] The groove 40 includes a curved surface 46 between the side surface 44 and the bottom surface 45. Therefore, the width of the bottom surface 45 is smaller than the distance between the pair of side surfaces 44 in the second direction. Here, the width of the bottom surface 45 can be defined by the dimension of the bottom surface 45 in the second direction. The width of the bottom surface 45 is larger than the diameter of the chip terminal 24. Therefore, it can be said that the width W3 of the groove 40 is larger than the diameter of the chip terminal 24 of the semiconductor chip 20. The width W3 of the groove 40 can be defined, for example, by the distance between the pair of side surfaces 44 in the second direction. The width W3 of the groove 40 is larger than 1 / 2 of the width W2 of the mounting portion 32. In one example, the width W3 of the groove 40 is approximately 2 / 3 of the width W2 of the mounting portion 32.

[0092] The mounting portion surface 32S is configured by, for example, a flat surface perpendicular to the Z direction. The mounting portion surface 32S includes an area where the chip terminals 24 of the semiconductor chip 20 are mounted on the mounting portion 32. A barrier layer 36 is formed on the mounting portion surface 32S. The barrier layer 36 and the chip terminals 24 are bonded to each other with a conductive bonding material SD.

[0093] [Method for Manufacturing Semiconductor Device] Next, an example of a method for manufacturing the semiconductor device 10 of the second embodiment will be described. The method for manufacturing the semiconductor device 10 of the second embodiment differs from the method for manufacturing the semiconductor device 10 of the first embodiment in the position at which the groove 40 is provided relative to the mounting portion 32. More specifically, the process for preparing the multiple terminals 30 in the method for manufacturing the semiconductor device 10 of the second embodiment includes a process for forming the groove 40 in the mounting portion 32 by etching the mounting portion 32. That is, the process for forming the groove 40 includes a process for forming the groove 40 so that it is recessed from the mounting portion back surface 32R, which is the region of the lead frame 830 corresponding to the mounting portion 32, toward the mounting portion front surface 32S. In one example, the region of the lead 831 corresponding to the mounting portion back surface 32R of the mounting portion 32 except for the region where the groove 40 is formed, is covered with resist. In one example, the resist covers both ends of the region corresponding to the mounting portion back surface 32R in the second direction. Next, the region exposed from the resist is etched. As a result, the groove 40 is formed in the center of the mounting portion back surface 32R in the second direction. As a result, the mounting portion 32 includes a base portion 32P, a wall portion 32Q (wall portion 60) rising from the base portion 32P, and a tip-side connecting wall 61. Furthermore, the portion of the lead portion 831 corresponding to the terminal portion 31 includes a base-side connecting wall 62. Thereafter, the resist is removed. The process from this point onward is the same as the manufacturing method of the semiconductor device 10 of the first embodiment.

[0094] [Effects of Second Embodiment] The semiconductor device 10 of the second embodiment provides the following effects: (2-1) The semiconductor device 10 of the second embodiment provides effects similar to those of (1-2) and (1-4) to (1-9) of the first embodiment.

[0095] (2-2) The mounting portion 32 includes a mounting portion back surface 32R that constitutes a part of the terminal back surface 30R. The groove 40 is recessed from the mounting portion back surface 32R toward the terminal front surface 30S. The mounting portion 32 is positioned at both ends in a second direction perpendicular to both the Z direction and the first direction by the groove 40, and includes a wall 60 that extends in the first direction. The wall 60 is configured to include the mounting portion back surface 32R.

[0096] According to this configuration, the provision of the wall portion 60 in the mounting portion 32 makes the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall portion 60. This makes it possible to prevent the mounting portion 32 from vibrating in the Z direction due to the sprayed pure water and chemicals during the process of cleaning the multiple terminals 30 and the semiconductor chip 20. Therefore, the application of force to the conductive bonding material SD due to vibration of the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0097] 18 and 19 , a semiconductor device 10 according to a third embodiment will be described. The semiconductor device 10 according to the third embodiment differs from the semiconductor device 10 according to the first embodiment mainly in the configuration of the plurality of terminals 30, particularly the positions and number of grooves 40. Differences from the semiconductor device 10 according to the first embodiment will be described in detail below, and components common to the semiconductor device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0098] [Configuration of Semiconductor Device] Fig. 18 schematically shows the cross-sectional structure of the semiconductor device 10 of the third embodiment. The cross-sectional position in Fig. 18 is the same as the cross-sectional position in Fig. 4. Fig. 19 schematically shows a part of the cross-sectional structure of the semiconductor device 10 of the third embodiment taken along line F19-F19 in Fig. 18.

[0099] As shown in Figure 18, the grooves 40 in the multiple terminals 30 include a front-side groove 40S and a back-side groove 40R. The front-side groove 40S is recessed from the terminal front surface 30S toward the terminal back surface 30R. The configuration of the front-side groove 40S is the same as that of the groove 40 in the first embodiment shown in Figures 4 to 7, for example. The back-side groove 40R is recessed from the mounting portion back surface 32R of the mounting portion 32 toward the terminal front surface 30S. The configuration of the back-side groove 40R is the same as that of the groove 40 in the second embodiment shown in Figures 15 to 17, for example.

[0100] Each terminal 30 includes a front side wall 60S formed by the front side groove 40S recessed from the terminal front surface 30S toward the terminal back surface 30R. The front side wall 60S is provided on both sides of the terminal 30 in the second direction. The front side wall 60S extends in the first direction. Because the configuration of the front side groove 40S is the same as the groove 40 in the first embodiment, the front side wall 60S is the same as the wall 60 in the first embodiment. Therefore, the terminal portion 31 includes a wall 31QS, as in the first embodiment. The mounting portion 32 includes a wall 32QS, as in the first embodiment. The front side wall 60S is composed of walls 31QS and 32QS. In the third embodiment, the wall 31QS is the same as the wall 31Q in the first embodiment, and the wall 32QS is the same as the wall 32Q in the first embodiment.

[0101] The mounting portion 32 includes a distal connecting wall 61S, as in the first embodiment. The terminal portion 31 includes a proximal connecting wall 62S, as in the first embodiment. The distal connecting wall 61S is the same as the distal connecting wall 61 in the first embodiment, and the proximal connecting wall 62S is the same as the proximal connecting wall 62 in the first embodiment.

[0102] Each terminal 30 includes a rear side wall 60R formed by the rear side groove 40R being recessed from the mounting portion rear surface 32R toward the mounting portion front surface 32S. The rear side wall 60R is provided on both sides of the mounting portion 32 in the second direction. The rear side wall 60R extends in the first direction. Because the rear side groove 40R is the same as the groove 40 in the second embodiment, the rear side wall 60R is the same as the wall 60 in the second embodiment. Therefore, the mounting portion 32 includes a wall 32QR, ​​as in the first embodiment. The wall 32QR is the same as the wall 32Q in the second embodiment.

[0103] Similarly to the second embodiment, the mounting portion 32 includes a distal connecting wall 61R and a proximal connecting wall 62R. The distal connecting wall 61R is the same as the distal connecting wall 61 in the second embodiment, and the proximal connecting wall 62R is the same as the proximal connecting wall 62 in the second embodiment.

[0104] The front-side groove 40S and the back-side groove 40R provided in the mounting portion 32 form the mounting portion 32 in an H-shape when viewed from the first direction. The front-side groove 40S and the back-side groove 40R form the mounting portion 32 to include a base portion 32P, a wall portion 32QS rising from the base portion 32P, and a wall portion 32QR falling from the base portion 32P.

[0105] As shown in FIG. 19 , the depth HS of the front-side groove 40S is equal to the depth HR of the back-side groove 40R. Therefore, the height of the front-side wall 60S is equal to the height of the back-side wall 60R. The depth HS of the front-side groove 40S is equal to, for example, the depth H1 of the groove 40 in the first embodiment (see FIG. 5 ). The width WS of the front-side groove 40S is equal to the width WR of the back-side groove 40R. The width WS of the front-side groove 40S is equal to, for example, the width W1 of the groove 40 in the first embodiment (see FIG. 5 ). The width WR of the back-side groove 40R is equal to, for example, the width W3 of the groove 40 in the second embodiment (see FIG. 17 ). Although not shown, the length in the first direction of the front-side groove 40S is longer than the length in the first direction of the back-side groove 40R. Therefore, the length in the first direction of the front-side wall 60S is longer than the length in the first direction of the back-side wall 60R.

[0106] [Method for Manufacturing Semiconductor Device] Next, an example of a method for manufacturing the semiconductor device 10 of the third embodiment will be described. The method for manufacturing the semiconductor device 10 of the third embodiment differs from the method for manufacturing the semiconductor device 10 of the first embodiment in that a front surface groove 40S and a back surface groove 40R are provided in the mounting portion 32. More specifically, the step of preparing the multiple terminals 30 in the method for manufacturing the semiconductor device 10 of the third embodiment includes a step of etching the mounting portion 32 to form the front surface groove 40S and the back surface groove 40R in the mounting portion 32.

[0107] In one example, the front-side resist covers the area of ​​the lead frame 830 corresponding to the terminal surface 30S of the terminal 30 except for the area where the front-side groove 40S is to be formed. In one example, the front-side resist covers both ends in the second direction of the area of ​​the lead frame 830 corresponding to the mounting portion surface 32S. The front-side resist also covers both ends in the second direction of the area of ​​the lead frame 830 corresponding to the terminal portion surface 31S. Next, the area exposed from the front-side resist is etched. As a result, the front-side groove 40S is formed at the center in the second direction of the mounting portion back surface 32R and the center in the second direction of the terminal portion surface 31S.

[0108] Then, the area of ​​the lead 831 corresponding to the mounting portion back surface 32R of the mounting portion 32 except for the area where the back surface groove 40R is formed is covered with resist. In one example, the resist covers both ends of the area corresponding to the mounting portion back surface 32R in the second direction. Next, the area exposed from the resist is etched. As a result, the back surface groove 40R is formed in the center of the mounting portion back surface 32R in the second direction.

[0109] Thus, forming the groove 40 includes a step of forming the front-side groove 40S so as to be recessed from the mounting portion front surface 32S, which is a region corresponding to the mounting portion 32 in the lead frame 830, toward the mounting portion back surface 32R. Forming the groove 40 also includes a step of forming the front-side groove 40S so as to be recessed from the terminal portion front surface 31S, which is a region corresponding to the terminal portion 31 in the lead frame 830, toward the terminal portion back surface 31R. Forming the groove 40 also includes a step of forming the back-side groove 40R so as to be recessed from the mounting portion back surface 32R, which is a region corresponding to the mounting portion 32 in the lead frame 830, toward the mounting portion front surface 32S.

[0110] Through these steps, the mounting portion 32 includes a base portion 32P, a wall portion 32QS rising from the base portion 32P, a wall portion 32QR falling from the base portion 32P, the tip-side connecting walls 61S, 61R, and the base-side connecting wall 62R. Then, both the front-side resist and the back-side resist are removed. The manufacturing method from this step onward is the same as that of the semiconductor device 10 of the first embodiment. The semiconductor device 10 of the third embodiment provides the same effects as those of the first and second embodiments.

[0111] 20 to 22, a semiconductor device 10 according to a fourth embodiment will be described. The semiconductor device 10 according to the fourth embodiment differs from the semiconductor device 10 according to the first embodiment mainly in the configuration of the plurality of terminals 30, particularly in that wall portions 60 are provided instead of the groove portions 40 of the first embodiment. Below, differences from the semiconductor device 10 according to the first embodiment will be described in detail, and components common to the semiconductor device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0112] [Configuration of Semiconductor Device] Figure 20 schematically shows the cross-sectional structure of the semiconductor device 10 of the fourth embodiment. The cross-sectional position in Figure 20 is the same as the cross-sectional position in Figure 4. Figure 21 schematically shows a part of the cross-sectional structure of the semiconductor device 10 of the fourth embodiment taken along line F21-F21 in Figure 20. Figure 22 schematically shows the perspective structure of one of the multiple terminals 30. For convenience, the barrier layer 36 is omitted from Figure 22.

[0113] 20 , the multiple terminals 30 include wall portions 60 that are provided to rise from the terminal surfaces 30S at least in the mounting portions 32. The wall portions 60 are located at both ends of the terminals 30 in a second direction that is perpendicular to both the Z direction and the first direction. The wall portions 60 extend in the first direction. The wall portions 60 are provided separately from the terminals 30.

[0114] The wall portion 60 is made of, for example, a metal film. The metal film is formed on the terminal surface 30S. In one example, the wall portion 60 is made of the same material as the terminal 30. In one example, the wall portion 60 is made of a material containing Cu. Note that the material making up the wall portion 60 can be changed as desired. Therefore, the wall portion 60 may be made of a material different from that of the terminal 30.

[0115] 22 , the wall portion 60 extends across both the terminal portion 31 and the mounting portion 32. The mounting portion 32 includes a distal connecting wall 61 that connects the wall portions 60 on both sides in the second direction at the distal end of the mounting portion 32. The terminal portion 31 includes a proximal connecting wall 62 that connects the wall portions 60 on both sides in the second direction. In the fourth embodiment, the wall portions 60, the distal connecting wall 61, the proximal connecting wall 62, and the terminal surface 30S form a groove portion 40. The terminal surface 30S forms a bottom surface 42 of the groove portion 40.

[0116] As shown in FIG. 21 , in the fourth embodiment, the mounting portion 32 includes a flat base portion 32P and a wall portion 32Q provided on the base portion 32P. In the fourth embodiment, the surface of the base portion 32P constitutes a mounting portion surface 32S, and the back surface of the base portion 32P constitutes a mounting portion back surface 32R. The wall portion 32Q is provided separately from the base portion 32P. The wall portion 32Q is provided to rise from the mounting portion surface 32S. Furthermore, a tip-side connecting wall 61 is provided on the base portion 32P. The tip-side connecting wall 61 is integrated with the wall portion 32Q. In other words, the tip-side connecting wall 61 is provided separately from the base portion 32P. As in the first embodiment, the tip-side connecting wall 61 is formed in a semicircular shape in plan view, similar to the tip portion of the mounting portion 32.

[0117] The terminal portion 31 also includes a wall portion 31Q that is continuous with the wall portion 32Q. The wall portion 31Q constitutes a part of the wall portion 60. In the fourth embodiment, the wall portion 31Q and the wall portion 32Q are integrally formed as a single unit. That is, the wall portion 60 is constituted by the walls 31Q and 32Q. Therefore, the wall portion 31Q is provided separately from the base portion 32P. The base-side connecting wall 62 is provided on the terminal portion surface 31S of the terminal portion 31. The base-side connecting wall 62 is integrated with the wall portion 31Q. That is, the base-side connecting wall 62 is provided separately from the base portion 32P.

[0118] 21 , the chip terminals 24 of the semiconductor chip 20 are mounted on a mounting portion surface 32S of the mounting portion 32. In one example, a barrier layer 36 is formed on the mounting portion surface 32S. The chip terminals 24 are bonded to the barrier layer 36 by a conductive bonding material SD.

[0119] The wall 60 includes a wall surface 63, a wall inner side surface 64, and a wall outer side surface 65. The wall surface 63 is, for example, a flat surface perpendicular to the Z direction. The wall inner side surface 64 is an inclined surface that slopes toward the center of the terminal 30 in the second direction as it extends from the wall surface 63 toward the terminal surface 30S. The wall outer side surface 65 is a flat surface that extends along the Z direction and the first direction. In one example, the wall outer side surface 65 is flush with the mounting portion side surface 32A of the mounting portion 32.

[0120] The portion of the mounting portion 32 where the wall portion 60 and the tip-side connecting wall 61 are not provided is half the thickness of the terminal portion 31. Therefore, the portion of the mounting portion 32 where the wall portion 60 is provided is larger than half the thickness of the terminal portion 31. In other words, the mounting portion 32 includes a portion that is thicker than half the thickness of the terminal portion 31.

[0121] The height TA of the wall portion 60 is equal to or greater than the thickness T1 of the conductive bonding material SD. The tip surface of the chip terminal 24, in other words, the surface of the barrier layer 24B that contacts the conductive bonding material SD, may be located at the same position as the wall surface 63 of the wall portion 60 in the Z direction, or closer to the mounting surface 32R than the wall surface 63. In other words, when the height TA of the wall portion 60 is equal to the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is located at the same position as the wall surface 63 in the Z direction. When the height TA of the wall portion 60 is smaller than the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is located on the opposite side of the wall surface 63 from the mounting surface 32S in the Z direction. Furthermore, the surface of the barrier layer 24B that contacts the conductive bonding material SD may be located closer to the mounting surface 32S than the wall surface 63 in the Z direction. In other words, when the height TA of the wall portion 60 is greater than the sum of the thickness T1 of the conductive bonding material SD and the thickness of the barrier layer 36, the tip surface of the chip terminal 24 is closer to the mounting surface 32S in the Z direction than the wall portion surface 63. In one example, the height TA of the wall portion 60 is 10 μm or less.

[0122] The distance DA between the wall portions 60 on both sides in the second direction can be said to be larger than the diameter of the chip terminals 24 of the semiconductor chip 20. The distance DA can be defined, for example, by the distance between a pair of wall portion inner surfaces 64 in the second direction. The distance DA is larger than ½ of the width W2 of the mounting portion 32. In one example, the distance DA is approximately ⅔ of the width W2 of the mounting portion 32.

[0123] [Method for Manufacturing Semiconductor Device] Next, an example of a method for manufacturing the semiconductor device 10 of the fourth embodiment will be described. The method for manufacturing the semiconductor device 10 of the fourth embodiment differs from the method for manufacturing the semiconductor device 10 of the first embodiment in that a wall portion 60 is provided in the mounting portion 32. More specifically, the process for preparing the multiple terminals 30 in the method for manufacturing the semiconductor device 10 of the fourth embodiment includes a process for forming the wall portion 60 in the mounting portion 32. In one example, the terminal surface 30S is covered with resist except for the area where the wall portion 60 is to be formed. More specifically, the resist is located between both ends of each lead portion 831 of the lead frame 830 in the second direction. The resist extends in the first direction. In other words, both ends of each lead portion 831 in the second direction are exposed from the resist. This exposed area extends in the first direction. Next, the wall portion 60 is formed by forming a metal film on the portion of the terminal surface 30S exposed from the resist, for example, by sputtering. As a result, the wall portion 60 is provided separately from the base portion 32P (mounting portion 32). The wall portions 60 are located at both ends of the terminal surface 30S of each lead portion 831 in the second direction and are provided so as to rise from the terminal surface 30S. The wall portions 60 are also formed so as to extend in the first direction. Thereafter, the resist is removed. The process from this point onward is the same as the manufacturing method of the semiconductor device 10 of the first embodiment.

[0124] [Effects of the Fourth Embodiment] According to the semiconductor device 10 of the fourth embodiment, in addition to the effects (1-6) and (1-7) of the first embodiment, the following effects can be obtained.

[0125] (4-1) The semiconductor device 10 includes a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing the opposite side to the terminal front surface 30S, a semiconductor chip 20 mounted on the plurality of terminals 30, and a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. The plurality of terminals 30 include terminal portions 31, each including a terminal portion back surface 31R of the terminal back surface 30R that is exposed from the sealing resin 50, a mounting portion 32 that extends from the terminal portion 31 in a first direction perpendicular to the Z direction, which is the thickness direction of the terminal 30, and on which the semiconductor chip 20 is mounted, and a wall portion 60 that is provided so as to rise from the terminal front surface 30S at least in the mounting portion 32. The wall portions 60 are located at both ends of the terminals 30 in a second direction perpendicular to both the Z direction and the first direction, and extend in the first direction.

[0126] According to this configuration, the provision of the wall portion 60 in the mounting portion 32 makes the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall portion 60. This makes it possible to prevent the mounting portion 32 from vibrating in the Z direction due to the sprayed pure water and chemicals during the process of cleaning the multiple terminals 30 and the semiconductor chip 20. Therefore, the application of force to the conductive bonding material SD due to vibration of the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0127] (4-2) The wall portion 60 extends from the terminal portion 31 to the tip of the mounting portion 32. With this configuration, the area of ​​the mounting portion 32 where the wall portion 60 is provided is larger in the first direction, making the mounting portion 32 less likely to bend. Therefore, in the process of cleaning the multiple terminals 30 and the semiconductor chip 20, it is possible to suppress vibration of the mounting portion 32 in the Z direction due to the sprayed pure water and chemicals.

[0128] (4-3) The wall portion 60 extends over both the terminal portion 31 and the mounting portion 32. This configuration makes it difficult for the mounting portion 32 to bend at the end of the mounting portion 32 that is closer to the terminal portion 31. Therefore, in the process of cleaning the multiple terminals 30 and the semiconductor chip 20, it is possible to prevent the mounting portion 32 from vibrating in the Z direction due to the sprayed pure water and chemicals.

[0129] (4-4) A method for manufacturing a semiconductor device 10 includes preparing a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing opposite the terminal front surface 30S, mounting a semiconductor chip 20 on the plurality of terminals 30, and forming a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. Preparing the plurality of terminals 30 includes forming a terminal portion 31, a mounting portion 32 that extends from the terminal portion 31 in a first direction perpendicular to the Z direction, which is the thickness direction of the terminal 30, and includes a flat base portion 32P on which the semiconductor chip 20 is mounted, and a wall portion 60 that is provided separately from the base portion 32P and rises from at least the terminal front surface 30S of the mounting portion 32. The wall portions 60 are located at both ends of the mounting portion 32 in a second direction perpendicular to both the Z direction and the first direction, and are formed to extend in the first direction.

[0130] According to this configuration, the wall 60 is provided in the mounting portion 32, making the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall 60. Therefore, the application of force to the conductive bonding material SD due to the application of an external force to the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0131] 23 to 25, a semiconductor device 10 according to a fifth embodiment will be described. The semiconductor device 10 according to the fifth embodiment differs from the semiconductor device 10 according to the fourth embodiment mainly in the configuration of the plurality of terminals 30, particularly the position of the wall portion 60. Below, differences from the semiconductor device 10 according to the fourth embodiment will be described in detail, and components common to the semiconductor device 10 according to the fourth embodiment will be denoted by the same reference numerals and will not be described again.

[0132] [Configuration of Semiconductor Device] Fig. 23 schematically shows the cross-sectional structure of the semiconductor device 10 of the fifth embodiment. The cross-sectional position in Fig. 23 is the same as the cross-sectional position in Fig. 4. Fig. 24 schematically shows a part of the cross-sectional structure of the semiconductor device 10 of the fifth embodiment taken along line F24-F24 in Fig. 23. Fig. 25 schematically shows the back surface structure of a predetermined one of the multiple terminals 30.

[0133] As shown in Figures 24 and 25, in the fifth embodiment, the wall portion 60 is provided on the mounting portion back surface 32R side of the mounting portion 32. The wall portion 60 protrudes from the mounting portion back surface 32R toward the opposite side of the terminal surface 30S (mounting portion surface 32S). The wall portion 60 is located at both ends of the terminal 30 in a second direction perpendicular to both the Z direction and the first direction. The wall portion 60 extends in the first direction. Although not shown, the wall portion 60 is provided on each of the multiple terminals 30. Here, the wall portion 60 in the fifth embodiment is an example of a "back surface side wall portion."

[0134] The wall portion 60 is made of, for example, a metal film. The metal film is formed on the mounting portion rear surface 32R. In one example, the wall portion 60 is made of the same material as the terminals 30. In one example, the wall portion 60 is made of a material containing Cu. Note that the material making up the wall portion 60 can be changed as desired. Therefore, the wall portion 60 may be made of a material different from that of the terminals 30.

[0135] The wall portion 60 is provided in the mounting portion 32. On the other hand, the wall portion 60 is not provided in the terminal portion 31. As shown in FIG. 25 , the mounting portion 32 includes a distal connecting wall 61 that connects the wall portions 60 on both sides in the second direction at the distal end of the mounting portion 32, and a proximal connecting wall 62 that connects the wall portions 60 on both sides in the second direction at the proximal end of the mounting portion 32. In the fifth embodiment, the wall portions 60, the distal connecting wall 61, the proximal connecting wall 62, and the mounting portion back surface 32R form a groove portion 40. The mounting portion back surface 32R forms a bottom surface 45 of the groove portion 40.

[0136] In the fifth embodiment, the mounting portion 32 includes a flat base portion 32P (see FIG. 24 ) and a wall portion 32Q protruding from the back surface of the base portion 32P. The surface of the base portion 32P constitutes the mounting portion front surface 32S, and the back surface of the base portion 32P constitutes the mounting portion back surface 32R. Therefore, the wall portion 32Q can be said to be provided to extend downward from the mounting portion back surface 32R. The wall portion 32Q is provided separately from the base portion 32P. Furthermore, the tip-side connecting wall 61 protrudes from the back surface of the base portion 32P. The tip-side connecting wall 61 can be said to be provided to extend downward from the mounting portion back surface 32R. The tip-side connecting wall 61 is integrated with the wall portion 32Q. In other words, the tip-side connecting wall 61 is provided separately from the base portion 32P. As in the fourth embodiment, the tip-side connecting wall 61 is formed in a semicircular shape in plan view, similar to the tip of the mounting portion 32. The base-end connecting wall 62 is provided so as to protrude from the mounting portion back surface 32R at the base end of the mounting portion 32. The base-end connecting wall 62 is provided so as to rise down from the mounting portion back surface 32R. The base-end connecting wall 62 is integrated with the wall portion 32Q. In other words, the base-end connecting wall 62 is provided separately from the base portion 32P.

[0137] 23 , the portion of the mounting portion 32 where the wall portion 60 and the tip-side connecting wall 61 are not provided is half the thickness of the terminal portion 31. Therefore, the portion of the mounting portion 32 where the wall portion 60 is provided is larger than half the thickness of the terminal portion 31. In other words, the mounting portion 32 includes a portion that is thicker than half the thickness of the terminal portion 31.

[0138] In the fifth embodiment, the wall portion 60 is not provided on the mounting portion surface 32S side of the mounting portion 32. That is, in the fifth embodiment, the mounting portion surface 32S is configured by a flat surface that is perpendicular to the Z direction.

[0139] 24 , the wall 60 of the fifth embodiment includes a wall back surface 66, a wall inner side surface 67, and a wall outer side surface 68. The wall back surface 66 is, for example, a flat surface perpendicular to the Z direction. The wall inner side surface 67 is an inclined surface that slopes toward the center of the terminal 30 in the second direction as it extends from the wall back surface 66 toward the terminal back surface 30R. The wall outer side surface 68 is a flat surface that extends along the Z direction and the first direction. In one example, the wall outer side surface 68 is flush with the mounting portion side surface 32A of the mounting portion 32.

[0140] The portion of the mounting portion 32 where the wall portion 60 and the tip-side connecting wall 61 are not provided is half the thickness of the terminal portion 31. Therefore, the portion of the mounting portion 32 where the wall portion 60 is provided is greater than half the thickness of the terminal portion 31. In other words, the mounting portion 32 includes a portion that is thicker than half the thickness of the terminal portion 31. The height TB of the wall portion 60 in the fifth embodiment is equal to, for example, the height TA of the wall portion 60 in the fourth embodiment (see FIG. 21 ). The distance DB between the wall portions 60 in the second direction in the fifth embodiment is equal to, for example, the distance DA between the wall portions 60 in the second direction in the fourth embodiment (see FIG. 21 ).

[0141] [Method for Manufacturing Semiconductor Device] Next, an example of a method for manufacturing the semiconductor device 10 of the fifth embodiment will be described. The method for manufacturing the semiconductor device 10 of the fifth embodiment differs from the method for manufacturing the semiconductor device 10 of the fourth embodiment in the position at which the wall portion 60 is provided relative to the mounting portion 32. More specifically, the process for preparing the multiple terminals 30 in the method for manufacturing the semiconductor device 10 of the fifth embodiment includes a process for forming the wall portion 60 on the mounting portion back surface 32R of the mounting portion 32. In one example, the mounting portion back surface 32R is covered with resist except for the area where the wall portion 60 is formed. More specifically, the resist is located between both ends in the second direction of the mounting portion back surface 32R in the area corresponding to the mounting portion 32 of each lead portion 831 of the lead frame 830. The resist extends in the first direction. In other words, both ends in the second direction of the mounting portion back surface 32R are exposed from the resist. This exposed area extends in the first direction. Next, the wall portion 60 is formed by forming a metal film on the portion of the mounting portion back surface 32R exposed from the resist, for example, by sputtering. As a result, the wall portions 60 are provided separately from the base portion 32P (mounting portion 32). The wall portions 60 are located at both ends of the mounting portion back surface 32R of each lead portion 831 in the second direction, and are provided so as to extend downward from the mounting portion back surface 32R. The wall portions 60 are also formed so as to extend in the first direction. Thereafter, the resist is removed. The process from this point onwards is the same as the manufacturing method of the semiconductor device 10 of the first embodiment.

[0142] [Effects of Fifth Embodiment] According to the semiconductor device 10 of the fifth embodiment, in addition to the effect equivalent to (4-2) of the fourth embodiment, the following effect can be obtained.

[0143] (5-1) The semiconductor device 10 includes a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing the opposite side to the terminal front surface 30S, a semiconductor chip 20 mounted on the plurality of terminals 30, and a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. The plurality of terminals 30 include terminal portions 31, each including a terminal portion back surface 31R of the terminal back surface 30R that is exposed from the sealing resin 50, and a mounting portion 32, which extends from the terminal portion 31 in a first direction perpendicular to the Z direction, which is the thickness direction of the terminal 30, and on which the semiconductor chip 20 is mounted. The mounting portion 32 is provided within the sealing resin 50 and includes a mounting portion back surface 32R that constitutes a part of the terminal back surface 30R. The semiconductor device 10 includes wall portions 60 that are located on both ends of the mounting portion back surface 32R in a second direction perpendicular to both the Z direction and the first direction and extend in the first direction.

[0144] According to this configuration, by providing the wall portion 60 on the mounting portion rear surface 32R of the mounting portion 32, the mounting portion 32 is less likely to bend compared to a mounting portion that does not have the wall portion 60. This makes it possible to prevent the mounting portion 32 from vibrating in the Z direction due to the sprayed pure water and chemicals during the process of cleaning the multiple terminals 30 and the semiconductor chip 20. Therefore, the application of force to the conductive bonding material SD due to the vibration of the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0145] (5-2) A manufacturing method for a semiconductor device 10 includes preparing a plurality of terminals 30, each including a terminal front surface 30S and a terminal back surface 30R facing away from the terminal front surface 30S; mounting a semiconductor chip 20 on the plurality of terminals 30; and forming a sealing resin 50 that seals the plurality of terminals 30 and the semiconductor chip 20. Preparing the plurality of terminals 30 includes forming a terminal portion 31 and a mounting portion 32, each of which includes a flat base portion 32P extending from the terminal portion 31 in a first direction perpendicular to the Z direction, which is the thickness direction of the terminal 30, and on which the semiconductor chip 20 is mounted; and forming a wall portion 60 separate from the base portion 32P. The mounting portion 32 is provided within the sealing resin 50 and includes a mounting portion back surface 32R that constitutes a part of the terminal back surface 30R. The wall portions 60 are formed to extend downward from the mounting portion back surface 32R, are located at both ends of the mounting portion back surface 32R in the second direction, and extend in the first direction.

[0146] According to this configuration, the wall 60 is provided on the mounting portion rear surface 32R of the mounting portion 32, making the mounting portion 32 less likely to bend compared to a mounting portion that does not have the wall 60. Therefore, application of force to the conductive bonding material SD due to application of an external force to the mounting portion 32 is suppressed, and the electrical connection between the mounting portion 32 and the semiconductor chip 20 can be stabilized.

[0147] 26 and 27 , a semiconductor device 10 according to a sixth embodiment will be described. The semiconductor device 10 according to the sixth embodiment differs from the semiconductor device 10 according to the fourth embodiment mainly in the configuration of the terminals 30, particularly the positions and number of wall portions 60. Differences from the semiconductor device 10 according to the fourth embodiment will be described in detail below, and components common to the semiconductor device 10 according to the fourth embodiment will be denoted by the same reference numerals and will not be described again.

[0148] [Configuration of Semiconductor Device] Fig. 26 schematically shows the cross-sectional structure of the semiconductor device 10 of the sixth embodiment. The cross-sectional position in Fig. 26 is the same as the cross-sectional position in Fig. 4. Fig. 27 schematically shows a part of the cross-sectional structure of the semiconductor device 10 of the sixth embodiment taken along line F27-F27 in Fig. 26.

[0149] As shown in FIG. 26 , the wall portions 60 of the multiple terminals 30 include a front side wall portion 60S and a back side wall portion 60R. The front side wall portion 60S is provided so as to rise in the Z direction from the terminal front surface 30S. The configuration of the front side wall portion 60S is the same as that of the wall portion 60 of the fourth embodiment shown in, for example, FIGS. 20 to 22 . The back side wall portion 60R protrudes from the mounting portion back surface 32R of the mounting portion 32 toward the opposite side from the terminal front surface 30S. The configuration of the back side wall portion 60R is the same as that of the wall portion 60 of the fifth embodiment shown in, for example, FIGS. 23 to 25 .

[0150] The front side wall portions 60S are provided on both sides of the terminal 30 in the second direction. The front side wall portions 60S extend in the first direction. The front side wall portions 60S are composed of wall portions 31QS (not shown) and 32QS. The wall portion 31QS is the same as the wall portion 31Q in the fourth embodiment. The mounting portion 32 includes a tip-side connecting wall 61S, as in the fourth embodiment. The terminal portion 31 includes a base-side connecting wall 62S, as in the fourth embodiment. The tip-side connecting wall 61S is the same as the tip-side connecting wall 61 in the fourth embodiment, and the base-side connecting wall 62S is the same as the base-side connecting wall 62 in the fourth embodiment. The front side wall portions 60S, the tip-side connecting wall 61S, and the base-side connecting wall 62S, together with the terminal front surface 30S, form a front side groove portion 40S. The terminal front surface 30S forms the bottom surface 42 of the front side groove portion 40S.

[0151] Each terminal 30 includes a rear side wall 60R formed by a rear side groove 40R recessed from the mounting portion rear surface 32R toward the mounting portion front surface 32S. The rear side wall 60R is provided on both sides of the mounting portion 32 in the second direction. The rear side wall 60R extends in the first direction. Because the rear side groove 40R is the same as the groove 40 in the second embodiment, the rear side wall 60R is the same as the wall 60 in the second embodiment. Furthermore, the mounting portion 32 includes a distal connecting wall 61R and a proximal connecting wall 62R, as in the second embodiment. The distal connecting wall 61R is the same as the distal connecting wall 61 in the second embodiment, and the proximal connecting wall 62R is the same as the proximal connecting wall 62 in the second embodiment.

[0152] The front sidewall 60S and the back sidewall 60R provided on the mounting portion 32 form the mounting portion 32 in an H-shape when viewed from the first direction. The front sidewall 60S and the back sidewall 60R define the mounting portion 32 as a base portion 32P, a front sidewall 60S (wall 32Q) rising from the base portion 32P, and a back sidewall 60R falling down from the base portion 32P.

[0153] As shown in FIG. 27 , the height TS of the front sidewall 60S is equal to the height TR of the back sidewall 60R. The height TS of the front sidewall 60S is equal to the height TA of the wall 60 in the fourth embodiment (see FIG. 21 ), for example. The distance DS between the front sidewalls 60S in the second direction is equal to the distance DR between the back sidewalls 60R in the second direction. The distance DS between the front sidewalls 60S in the second direction is equal to the distance DA between the walls 60 in the second direction in the fourth embodiment (see FIG. 21 ), for example. The distance DR between the back sidewalls 60R in the second direction is equal to the distance DB between the walls 60 in the second direction in the fifth embodiment (see FIG. 24 ). Although not shown, the length of the front sidewall 60S is longer than the length of the back sidewall 60R.

[0154] [Method for Manufacturing Semiconductor Device] Next, an example of a method for manufacturing the semiconductor device 10 of the sixth embodiment will be described. The method for manufacturing the semiconductor device 10 of the sixth embodiment differs from the method for manufacturing the semiconductor device 10 of the fourth embodiment in that a front side wall portion 60S and a back side wall portion 60R are provided on the mounting portion 32. More specifically, the process for preparing the multiple terminals 30 in the method for manufacturing the semiconductor device 10 of the sixth embodiment includes a process for forming a front side groove portion 40S on the mounting portion front surface 32S and a process for forming a back side groove portion 40R on the mounting portion back surface 32R. In one example, the terminal front surface 30S of the terminal 30 is covered with a front side resist except for the area where the front side wall portion 60S is formed. Then, the mounting portion back surface 32R of the mounting portion 32 is covered with a back side resist except for the area where the back side wall portion 60R is formed. Next, sputtering is performed on the portion of the terminal front surface 30S exposed from the front side resist and the portion of the mounting portion back surface 32R exposed from the back side resist. As a result, a front side wall portion 60S is formed on the terminal front surface 30S, and a back side wall portion 60R is formed on the mounting portion back surface 32R. Then, both the front side resist and the back side resist are removed. The manufacturing method from this step onward is the same as that of the semiconductor device 10 of the fourth embodiment. The semiconductor device 10 of the sixth embodiment can achieve the same effects as those of the fourth and fifth embodiments.

[0155] 28 to 34, a semiconductor device 10 according to a seventh embodiment will be described. The semiconductor device 10 according to the seventh embodiment differs from the semiconductor device 10 according to the first embodiment mainly in the configuration of the plurality of terminals 30, particularly the thickness of the mounting portion 32. Below, differences from the semiconductor device 10 according to the first embodiment will be described in detail, and components common to the semiconductor device 10 according to the first embodiment will be denoted by the same reference numerals and will not be described again.

[0156] [Configuration of Semiconductor Device] The configuration of the multiple terminals 30 of the seventh embodiment will be described with reference to Figures 28 and 29. Figure 28 schematically shows the cross-sectional structure of the semiconductor device 10 of the seventh embodiment. The cross-sectional position in Figure 28 is the same as the cross-sectional position in Figure 4. Figure 29 schematically shows a portion of the cross-sectional structure of the semiconductor device 10 of the seventh embodiment taken along line F29-F29 in Figure 28.

[0157] As shown in FIG. 28 , the multiple terminals 30 of the seventh embodiment have a different ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 compared to the multiple terminals 30 of the first embodiment. Specifically, the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 in the first embodiment is ½ or less. More specifically, in the portion of the mounting portion 32 where the groove 40 is not provided, the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is ½. In the portion of the mounting portion 32 where the groove 40 is provided, the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is less than ½. On the other hand, in the multiple terminals 30 of the seventh embodiment, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 is greater than ½. In one example, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 is greater than ⅔. In one example, the ratio of the thickness of the portion of the mounting portion 32 where the groove portion 40 is not provided to the thickness of the terminal portion 31 is 4 / 5 or less.

[0158] 29 , the thickness of the portion of the mounting portion 32 where the groove portion 40 is not provided is, for example, equal to the thickness of the mounting portion 32. The thickness of the portion of the mounting portion 32 where the groove portion 40 is provided is, for example, smaller than the thickness of the mounting portion 32.

[0159] 28 , a protrusion 38 is provided on the mounting portion side surface 32A of the mounting portion 32. The protrusion 38 extends, for example, around the entire periphery of the mounting portion side surface 32A. The protrusion 38 also extends to the terminal portion side surface 31A of the terminal portion 31. On the other hand, the protrusion 38 does not extend to the exposed side surface 31AA of the terminal portion side surface 31A of the terminal portion 31.

[0160] The protrusion 38 is provided in the middle of the mounting portion 32 in the Z direction. In other words, the protrusion 38 is provided at a position separated from both the terminal front surface 30S and the terminal back surface 30R in the Z direction. It can also be said that the protrusion 38 is provided in the middle of the mounting portion side surface 32A of the mounting portion 32 in the Z direction. The mounting portion side surface 32A includes the tip surface, which is the end surface of the mounting portion 32 in the first direction. Therefore, it can be said that the protrusion 38 is located in the middle of the tip surface of the mounting portion 32 in the Z direction. It can also be said that the protrusion 38 extends across the entire tip surface of the mounting portion 32 in the second direction. Here, the "middle portion of the mounting portion 32 in the Z direction" refers to the region between the front surface end of the mounting portion 32, which includes the mounting portion front surface 32S, and the back surface end of the mounting portion 32, which includes the mounting portion back surface 32R.

[0161] In one example, the protrusion 38 is provided at the center in the Z direction of the mounting portion side surface 32A of the mounting portion 32. It can also be said that the protrusion 38 is located at the center in the Z direction of the tip surface of the mounting portion 32. Note that if the difference between the distance between the mounting portion front surface 32S and the protrusion 38 and the distance between the mounting portion rear surface 32R and the protrusion 38 is within 10% of the distance between the mounting portion front surface 32S and the protrusion 38, for example, it can be said that the protrusion 38 is provided at the center in the Z direction of the mounting portion side surface 32A of the mounting portion 32.

[0162] The protrusion 38 includes two side surfaces facing opposite each other in the Z direction. The two side surfaces include curved surfaces that approach each other toward the tip of the protrusion 38. Therefore, the protrusion 38 includes a shape that tapers toward the tip.

[0163] The plurality of terminals 30 include a stepped portion 39. The stepped portion 39 is formed so that a mounting portion rear surface 32R, which is a portion of the terminal rear surface 30R corresponding to the mounting portion 32, is located closer to the terminal front surface 30S than the terminal portion rear surface 31R of the terminal portion 31. The stepped portion 39 includes a curved surface. In the seventh embodiment, the stepped portion 39 is formed by a curved surface.

[0164] The Z-direction dimension of the step portion 39 is smaller than the thickness of the mounting portion 32. Here, the thickness-direction dimension of the step portion 39 can be defined as the distance in the Z direction between the terminal portion back surface 31R and the mounting portion back surface 32R. The thickness-direction dimension of the step portion 39 is equal to the thickness of the portion of the sealing resin 50 that covers the mounting portion back surface 32R. The thickness of the portion of the sealing resin 50 that covers the mounting portion back surface 32R is less than half the thickness of the mounting portion 32. Furthermore, the Z-direction dimension of the step portion 39 is smaller than the distance in the Z direction between the mounting portion back surface 32R and the protrusion 38. Furthermore, the Z-direction dimension of the step portion 39 is smaller than the distance between the mounting portion surface 32S and the protrusion 38.

[0165] 28 and 29 , each of the multiple terminals 30 includes a groove 40. The shape and arrangement of the groove 40 are the same as, for example, the groove 40 in the first embodiment. In one example, the protrusion 38 is located closer to the terminal back surface 30R than the bottom surface 42 of the groove 40. In addition, the mounting structure between each chip terminal 24 of the semiconductor chip 20 and the multiple terminals 30 is the same as in the first embodiment.

[0166] Each terminal 30 includes a wall portion 60 formed by the groove portion 40 being recessed from the terminal front surface 30S toward the terminal back surface 30R. The wall portions 60 are provided on both sides of the terminal 30 in the second direction. The wall portions 60 extend in the first direction.

[0167] The groove 40 provided in the mounting portion 32 forms a U-shape when viewed from the first direction. Because the groove 40 is recessed from the mounting portion surface 32S toward the mounting portion back surface 32R, the mounting portion 32 includes a base portion 32P and a wall portion 32Q rising from the base portion 32P. In the seventh embodiment, the base portion 32P and the wall portion 32Q are integrally formed as a single unit. The wall portion 32Q extends in the first direction at both ends of the mounting portion 32 in the second direction. The wall portion 32Q constitutes a part of the wall portion 60. The base portion 32P includes the mounting portion back surface 32R. The wall portion 32Q includes the mounting portion surface 32S. In the seventh embodiment, the thickness of the base portion 32P is greater than half the thickness of the terminal portion 31. Here, the thickness of the base portion 32P can be defined as the distance in the Z direction between the bottom surface 42 of the groove 40 and the mounting portion back surface 32R.

[0168] As shown in Fig. 28, the groove 40 is recessed from the terminal surface 31S toward the terminal back surface 31R, so that the terminal 31 includes a wall 31Q that continues from the wall 32Q of the mounting portion 32. This wall 31Q is the same as the wall 31Q in the first embodiment. The wall 31Q constitutes a part of the wall 60. In the seventh embodiment, the wall 31Q and the wall 32Q are integrally formed. That is, the wall 60 is constituted by the walls 31Q and 32Q.

[0169] 30 to 34, an example of a manufacturing method for the semiconductor device 10 of the seventh embodiment, in particular an example of a manufacturing method for the plurality of terminals 30, will be described. Figures 30 to 34 show an example of a process for preparing the plurality of terminals 30, and schematically illustrate the end face structure of the metal plate 930.

[0170] 30 , in the process of preparing the plurality of terminals 30, a metal plate 930 is first prepared. The metal plate 930 is formed in a flat plate shape with its thickness direction in the Z direction. The metal plate 930 includes a front surface 930S and a back surface 930R facing opposite sides in the Z direction.

[0171] Next, a front-side resist 940S is formed on a front surface 930S of the metal plate 930, and a back-side resist 940R is formed on a back surface 930R of the metal plate 930. Both the front-side resist 940S and the back-side resist 940R are made of, for example, photoresist. The front-side resist 940S covers portions corresponding to the terminal front surfaces 30S of the multiple terminals 30. The back-side resist 940R covers portions corresponding to the terminal portion back surfaces 31R of the terminal portions 31 of the multiple terminals 30.

[0172] As shown in FIG. 31 , the process of preparing the plurality of terminals 30 includes a process of etching the front surface 930S and the back surface 930R of the metal plate 930. In this process, the portion of the front surface 930S of the metal plate 930 that is exposed from the front surface resist 940S is partially etched in the Z direction. As a result, a recess 931 recessed from the front surface 930S of the metal plate 930 is formed. The recess 931 is formed in a portion of the front surface 930S of the metal plate 930 that is different from the terminals 30. The portion of the back surface 930R of the metal plate 930 that is exposed from the back surface resist 940R is partially etched in the Z direction. As a result, a recess 932 recessed from the back surface 930R of the metal plate 930 is formed. The recess 932 includes the mounting portion 32. The formation of the recess 932 forms the mounting portion back surface 32R of the mounting portion 32. In this way, the process of preparing the plurality of terminals 30 includes a process of forming the recess 931 by etching a portion of the front surface 930S of the metal plate 930. The step of preparing the plurality of terminals 30 also includes a step of forming recesses 932 by etching a part of the rear surface 930R of the metal plate 930.

[0173] The recess 932 includes a part of the terminal 31 and the step 39. The step 39 is formed between the mounting portion 32 and the terminal 31 so as to be located closer to the front surface 930S than to the terminal rear surface 31R of the terminal 31. Therefore, the process of forming the recess 932 includes the process of forming the terminal 31 and the step 39. The depth of the recess 932 is about ⅕ the thickness of the metal plate 930.

[0174] 32 , in the step of preparing the plurality of terminals 30, a back-side resist 950 is formed on the back surface 930R of the metal plate 930. The back-side resist 950 covers the back-side resist 940R and also covers the portion of the back surface 930R of the metal plate 930 that corresponds to the mounting portion 32. On the other hand, like the front-side resist 940S, the back-side resist 950 exposes the portion of the back surface 930R of the metal plate 930 that is different from the terminals 30.

[0175] Next, as shown in FIG. 33 , the process of preparing the plurality of terminals 30 includes a process of forming the mounting portion 32 by etching. In this process, the metal plate 930 is etched from both the front surface 930S side and the back surface 930R side of the metal plate 930. As a result, the mounting portion 32 is formed and the protrusion 38 is also formed. In the process of preparing the plurality of terminals 30, the metal plate 930 is selectively removed to form the tip surface in the first direction and the protrusion 38 located at the middle portion of the tip surface in the Z direction. The selective removal of the metal plate 930 further includes a process of etching the recess 931 from the front surface 930S side of the metal plate 930. In the seventh embodiment, the amount of etching in the Z direction on the front surface 930S side of the metal plate 930 is equal to the amount of etching in the Z direction on the back surface 930R side of the metal plate 930. As a result, the protrusion 38 is located at the center of the tip surface of the mounting portion 32 in the Z direction. The protrusion 38 is formed around the entire periphery of the mounting portion side surface 32A of the mounting portion 32. After the mounting portion 32 is formed, the front side resist 940S, the back side resist 940R, and the back side resist 950 are each removed.

[0176] Furthermore, because the depth of the recess 932 is approximately 1 / 5 of the thickness of the metal plate 930 and the thickness of the terminal portion 31 is equal to the thickness of the metal plate 930, the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is greater than 1 / 2. Furthermore, the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is 4 / 5 or less. Thus, the step of preparing the plurality of terminals 30 includes forming the terminal portion 31 and the mounting portion 32 so that the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is greater than 1 / 2. The step of preparing the plurality of terminals 30 includes forming the terminal portion 31 and the mounting portion 32 so that the ratio of the thickness of the mounting portion 32 to the thickness of the terminal portion 31 is 4 / 5 or less.

[0177] 34 , the process of preparing the plurality of terminals 30 includes a process of forming grooves 40. The grooves 40 are formed in at least portions of the metal plate 930 that correspond to the mounting portions 32. Therefore, it can be said that the process of preparing the plurality of terminals 30 includes a process of forming the grooves 40 in the mounting portions 32 by etching at least the mounting portions 32. The grooves 40 are located between both ends of a second direction that is perpendicular to both the first direction and the Z direction. The grooves 40 are formed to extend in the first direction. In the seventh embodiment, the grooves 40 are formed in portions of the lead portions 831 that correspond to both the terminal portions 31 and the mounting portions 32.

[0178] The grooves 40 are formed by at least partially etching the mounting portion 32 from the surface 930S of the metal plate 930. That is, the process of preparing the multiple terminals 30 includes forming the grooves 40 by at least partially etching the mounting portion 32 from the surface 930S of the metal plate 930. In the seventh embodiment, the grooves 40 are formed by partially etching both the terminal portion 31 and the mounting portion 32 from the surface 930S of the metal plate 930. By forming the grooves 40, the mounting portion 32 includes a base portion 32P, a wall portion 32Q (wall portion 60 (see FIG. 29 )) rising from the base portion 32P, and a tip-side connecting wall 61. Furthermore, the portion of the lead 831 corresponding to the terminal portion 31 includes a base-side connecting wall 62. Because the wall portions 32Q are provided on both sides of the mounting portion 32 in the second direction, the mounting portion 32 includes a U-shaped portion when viewed from the first direction. The subsequent steps are the same as those in the manufacturing method of the semiconductor device 10 of the first embodiment.

[0179] [Effects of Seventh Embodiment] According to the semiconductor device 10 of the seventh embodiment, the following effects can be obtained: (7-1) According to the semiconductor device 10 of the seventh embodiment, effects equivalent to (1-1) to (1-9) of the first embodiment can be obtained.

[0180] (7-2) The thickness of the mounting portion 32 of the multiple terminals 30 is greater than half the thickness of the terminal portion 31. This configuration can prevent the mounting portion 32 from being deformed by external force, compared to a configuration in which the thickness of the mounting portion 32 is less than half the thickness of the terminal portion 31. For example, in the process of cleaning the multiple terminals 30 and the semiconductor chip 20, vibration of the mounting portion 32 due to pressure on the terminals 30 from the Z direction can be prevented. This can stabilize the electrical connection between the mounting portion 32 and the semiconductor chip 20. In addition, the increased thickness of the mounting portion 32 reduces the electrical resistance of the multiple terminals 30, allowing a large current to be supplied to the multiple terminals 30.

[0181] (7-3) The multiple terminals 30 include protrusions 38 located at the middle of the mounting portion side surface 32A of the mounting portion 32 in the Z direction. With this configuration, stress is dispersed between the protrusions 38 and the sealing resin 50 at the front end and back end of the mounting portion 32. Therefore, stress concentration at the front end or back end of the mounting portion 32 can be reduced compared to when the protrusions 38 are provided at the front end or back end of the mounting portion 32.

[0182] (7-4) The protrusions 38 extend over the entire mounting portion side surface 32A of the mounting portion 32. This configuration can prevent stress from concentrating on a portion of the mounting portion side surface 32A, compared to a configuration in which the protrusions 38 are formed only on a portion of the mounting portion side surface 32A. In addition, the terminals 30 are less likely to fall off the sealing resin 50.

[0183] (7-5) The protrusion 38 includes side surfaces facing opposite each other in the Z direction. These side surfaces are configured as curved surfaces. With this configuration, the shape of the protrusion 38 changes more smoothly compared to when the protrusion 38 is configured, for example, as a rectangular shape. This reduces the concentration of stress on the protrusion 38.

[0184] (7-6) The plurality of terminals 30 include a stepped portion 39. The stepped portion 39 is formed so that the mounting portion rear surface 32R, which is a portion of the terminal rear surface 30R that corresponds to the mounting portion 32, is located closer to the terminal front surface 30S than the terminal rear surface 31R of the terminal portion 31. The dimension of the stepped portion 39 in the Z direction is smaller than the thickness of the mounting portion 32.

[0185] According to this configuration, the thickness of the mounting portion 32 can be increased compared to a configuration in which the dimension of the step portion 39 in the Z direction is greater than the thickness of the mounting portion 32. This makes it less likely that the mounting portion 32 will bend due to an external force.

[0186] (7-7) The step portion 39 includes a curved surface. With this configuration, stress concentration at the step portion 39 can be reduced compared to a configuration in which the step portion 39 is made of a flat surface. Therefore, deformation of the mounting portion 32 due to stress concentration at the step portion 39 can be suppressed.

[0187] (7-8) The dimension of the step portion 39 in the Z direction is smaller than the distance in the Z direction between the mounting portion back surface 32R of the mounting portion 32 and the protrusion 38. With this configuration, the thickness of the mounting portion 32 can be increased compared to a configuration in which the dimension of the step portion 39 in the Z direction is larger than the distance in the Z direction between the mounting portion back surface 32R and the protrusion 38. This makes the mounting portion 32 less likely to bend due to external forces.

[0188] <Modifications> The above-described embodiments can be modified as follows: The following modifications can be combined with each other to the extent that they are not technically inconsistent.

[0189] [Combination of Embodiments] The first to seventh embodiments can be combined with one another to the extent that no technical contradiction occurs. In one example, the groove 40 configuration of the second or third embodiment may be combined with the multiple terminals 30 of the seventh embodiment. In another example, the groove 40 may be omitted from the multiple terminals 30 of the seventh embodiment, and the wall 60 of any of the fourth to sixth embodiments may be combined. In another example, the wall 60 of the fourth embodiment may be combined with the multiple terminals 30 of the second embodiment. In another example, the groove 40 of the second embodiment may be combined with the multiple terminals 30 of the fourth embodiment.

[0190] In one example, the wall portion 60 of the fourth embodiment may be combined with a plurality of terminals 30 of the first and seventh embodiments. In another example, the wall portion 60 of the fifth embodiment may be combined with a plurality of terminals 30 of the first and seventh embodiments. In another example, the wall portion 60 of the fifth embodiment may be combined with a plurality of terminals 30 of the second embodiment. In another example, the wall portion 60 of the fourth embodiment may be combined with a plurality of terminals 30 of the second embodiment. In another example, any of the wall portions 60 (front side wall portion 60S, rear side wall portion 60R) of the fourth to sixth embodiments may be combined with a plurality of terminals 30 of the third embodiment.

[0191] [Modifications to Groove] In the first embodiment, the groove 40 may be provided in the mounting portion 32 but not in the terminal portion 31. In other words, the groove 40 may be provided so as to extend in the first direction closer to the tip of the mounting portion 32 than the terminal portion 31. Note that the front-side groove 40S of the third embodiment can also be modified in the same way.

[0192] In the first embodiment, the groove 40 may be open in the first direction. For example, as shown in FIG. 35 , the groove 40 may be open in the first direction at the tip of the mounting portion 32 and open in the first direction at the terminal portion 31. The same modification can be applied to the front-side groove 40S of the third embodiment. Alternatively, the groove 40 may be open in the first direction at the tip of the mounting portion 32, but not open in the first direction at the terminal portion 31. Alternatively, the groove 40 may be open on the side of the terminal portion 31 opposite the mounting portion 32 in the first direction, but not open in the first direction at the tip of the mounting portion 32.

[0193] In the first embodiment, the groove 40 may be located closer to the terminal portion 31 in the first direction than the region of the mounting portion 32 where the chip terminal 24 of the semiconductor chip 20 is mounted. In this case, the chip terminal 24 is mounted on the mounting portion surface 32S of the mounting portion 32. More specifically, a barrier layer 36 is formed in the region of the mounting portion surface 32S where the chip terminal 24 is mounted. The chip terminal 24 is bonded to the barrier layer 36 by a conductive bonding material SD. Note that the front-side groove 40S of the third embodiment can also be modified in a similar manner.

[0194] In the second embodiment, the groove 40 may be open in the first direction at the tip of the mounting portion 32. The rear surface groove 40R in the third embodiment can be similarly modified. In the first and second embodiments, the widths W1 and W3 of the groove 40 can be changed as desired.

[0195] In the first and second embodiments, the depths H1 and H2 of the grooves 40 can be changed as desired. In the first and second embodiments, the length of the grooves 40 in the first direction can be changed as desired.

[0196] In the third embodiment, the width WS of the front-side groove portion 40S and the width WR of the back-side groove portion 40R may be different from each other. For example, the width WS of the front-side groove portion 40S may be larger than the width WR of the back-side groove portion 40R. For another example, the width WR of the back-side groove portion 40R may be larger than the width WS of the front-side groove portion 40S.

[0197] In the third embodiment, the depth HS of the front-side groove portion 40S and the depth HR of the back-side groove portion 40R may be different from each other. For example, the depth HS of the front-side groove portion 40S may be greater than the depth HR of the back-side groove portion 40R. For another example, the depth HR of the back-side groove portion 40R may be greater than the depth HS of the front-side groove portion 40S.

[0198] In the third embodiment, the length in the first direction of the front-side groove portion 40S may be equal to the length in the first direction of the back-side groove portion 40R. Alternatively, the length in the first direction of the front-side groove portion 40S may be shorter than the length in the first direction of the back-side groove portion 40R.

[0199] In the third embodiment, the width WS of the front surface groove 40S can be changed as desired. In the third embodiment, the depth HS of the front surface groove 40S can be changed as desired. In the third embodiment, the length of the front surface groove 40S in the first direction can be changed as desired.

[0200] In the third embodiment, the width WR of the rear groove portion 40R can be changed as desired. In the third embodiment, the depth HR of the rear groove portion 40R can be changed as desired. In the third embodiment, the length of the rear groove portion 40R in the first direction can be changed as desired.

[0201] In the seventh embodiment, the width W1 of the groove 40 can be changed as desired. In the seventh embodiment, the length of the groove 40 in the first direction can be changed as desired. In the seventh embodiment, the depth H1 of the groove 40 can be deeper than the depth H1 of the groove 40 in the first embodiment. The depth H1 of the groove 40 in the seventh embodiment can be deeper within a range in which the mounting portion surface 32S and the chip back surface 20R of the semiconductor chip 20 do not come into contact with each other when the semiconductor chip 20 is mounted on the mounting portion 32.

[0202] In the first, second, and seventh embodiments, the cross-sectional shape of the groove 40 cut along a plane along the second direction and the Z direction can be changed as desired. [Modifications to the Wall] In the fourth embodiment, the wall 60 may be provided on the mounting portion 32 but not on the terminal portion 31. In other words, the wall 60 may be provided so as to extend in the first direction closer to the tip of the mounting portion 32 than the terminal portion 31. Note that the front side wall 60S of the sixth embodiment can also be changed in a similar manner.

[0203] In the fourth embodiment, the wall portion 60 may be located closer to the terminal portion 31 in the first direction than the region of the mounting portion 32 where the chip terminals 24 of the semiconductor chip 20 are mounted. Note that the front surface side wall portion 60S of the sixth embodiment can also be modified in the same way.

[0204] In the fourth and fifth embodiments, the height TA (TB) of the wall portion 60 can be changed as desired. In the fourth and fifth embodiments, the distance DA (DB) between the wall portions 60 in the second direction can be changed as desired.

[0205] In the fourth and fifth embodiments, the length of the wall portion 60 in the first direction can be changed as desired. In the sixth embodiment, the height TS of the front sidewall portion 60S and the height TR of the back sidewall portion 60R may be different from each other. In one example, the height TS of the front sidewall portion 60S may be greater than the height TR of the back sidewall portion 60R. In another example, the height TR of the back sidewall portion 60R may be greater than the height TS of the front sidewall portion 60S.

[0206] In the sixth embodiment, the distance DS between the front side walls 60S in the second direction and the distance DR between the back side walls 60R in the second direction may be different from each other. In one example, the distance DS between the front side walls 60S in the second direction may be greater than the distance DR between the back side walls 60R in the second direction. In one example, the distance DR between the back side walls 60R in the second direction may be greater than the distance DS between the front side walls 60S in the second direction.

[0207] In the sixth embodiment, the length in the first direction of the front side wall portion 60S may be equal to the length in the first direction of the back side wall portion 60R. Alternatively, the length in the first direction of the front side wall portion 60S may be shorter than the length in the first direction of the back side wall portion 60R.

[0208] In the fourth and fifth embodiments, the tip-side connecting wall 61 may be omitted from the wall portion 60. In the sixth embodiment, the tip-side connecting wall 61 may be omitted from the front-surface side wall portion 60S. In the sixth embodiment, the tip-side connecting wall 61 may be omitted from the rear-surface side wall portion 60R.

[0209] In the fourth and fifth embodiments, the base-end connecting wall 62 may be omitted from the wall portion 60. In the sixth embodiment, the base-end connecting wall 62 may be omitted from the front-surface side wall portion 60S. In the sixth embodiment, the base-end connecting wall 62 may be omitted from the rear-surface side wall portion 60R.

[0210] In the fourth to sixth embodiments, the cross-sectional shape of the wall 60 (the front side wall 60S and the back side wall 60R) cut by a plane along the Z direction and the second direction can be changed as desired. In one example, the cross-sectional shape of the wall 60 may be trapezoidal. In other words, the outer wall surface 65 of the wall 60 may be an inclined surface inclined with respect to the Z direction.

[0211] In the fourth and fifth embodiments, the wall portion 60 may be made of an insulating material such as resist instead of a metal film. In the sixth embodiment, the front sidewall portion 60S may be made of an insulating material such as resist instead of a metal film. In the sixth embodiment, the back sidewall portion 60R may be made of an insulating material such as resist instead of a metal film.

[0212] [Modifications of the Semiconductor Device] In the seventh embodiment, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 can be changed as desired. In one example, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 may be greater than 4 / 5. In one example, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 may be greater than 5 / 6. In one example, the ratio of the thickness of the portion of the mounting portion 32 where the groove 40 is not provided to the thickness of the terminal portion 31 may be greater than 9 / 10.

[0213] In each embodiment, the number of terminals 30 can be changed as desired. In each embodiment, the shape of the mounting portion 32 of each terminal 30 in plan view can be changed as desired.

[0214] In each embodiment, the exposed side surface 31AA does not have to be provided on the terminal portion 31 of at least one of the plurality of terminals 30. In other words, the terminal portion 31 does not have to be exposed from the sealing side surface 50A of the sealing resin 50.

[0215] [Modifications of the Manufacturing Method of the Semiconductor Device] In the first to third and seventh embodiments, the groove 40 may be formed before forming the base portion 32P of the mounting portion 32. Furthermore, in the fourth to sixth embodiments, the wall portion 60 may be formed before forming the base portion 32P of the mounting portion 32.

[0216] In the third embodiment, the front surface groove portion 40S and the back surface groove portion 40R may be formed in a common process, or the back surface groove portion 40R may be formed after the front surface groove portion 40S is formed, or the front surface groove portion 40S may be formed after the back surface groove portion 40R is formed.

[0217] In the fourth to sixth embodiments, the wall portion 60, the distal connecting wall 61, and the proximal connecting wall 62 may be formed separately. In the sixth embodiment, the front side wall portion 60S and the rear side wall portion 60R may be formed in a common process, or the rear side wall portion 60R may be formed after the front side wall portion 60S is formed, or the front side wall portion 60S may be formed after the rear side wall portion 60R is formed.

[0218] One or more of the various examples described herein can be combined to the extent that they are not technically inconsistent. The term "on" as used in this disclosure includes the meanings of "on" and "above," unless the context clearly indicates otherwise. Thus, for example, the expression "a first element is disposed on a second element" means that in some embodiments, the first element may be in contact with the second element and disposed directly on the second element, but in other embodiments, the first element may be disposed above the second element without contacting the second element. In other words, the term "on" does not exclude a structure in which another element is formed between the first element and the second element.

[0219] The Z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it have to completely coincide with the vertical direction. Therefore, various structures according to this disclosure are not limited to the "up" and "down" in the Z direction described herein being "up" and "down" in the vertical direction. For example, the X direction may be the vertical direction, or the Y direction may be the vertical direction.

[0220] <Supplementary Notes> The technical ideas that can be understood from this disclosure are described below. Note that, for the purpose of aiding understanding and not intending to be limiting, the components described in the supplementary notes are given the reference numerals of the corresponding components in the above embodiment. The reference numerals are shown as examples to aid understanding, and the components described in each supplementary note should not be limited to the components indicated by the reference numerals.

[0221] [Appendix A1] A semiconductor chip (20) mounted on the plurality of terminals (30), and a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein the plurality of terminals (30) comprise: a terminal portion (31) including a terminal portion back surface (31R) of the terminal back surface (30R) that is exposed from the sealing resin (50), a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30) and on which the semiconductor chip (20) is mounted, and a groove portion (40) that is provided in at least the mounting portion (32) and that extends in the first direction. The semiconductor device (10) includes: a wall portion (60) that is located at both ends of a second direction perpendicular to both the thickness direction (Z direction) and the first direction and extends in the first direction, due to the groove portion (40).

[0222] [Appendix A2] The semiconductor device according to Appendix A1, wherein the groove portion (40) is recessed from the terminal front surface (30S) toward the terminal back surface (30R), and the wall portion (60) is configured to include the terminal front surface (30S).

[0223] [Appendix A3] The semiconductor device according to appendix A1 or A2, wherein the groove (40) extends from the terminal portion (31) to a tip end of the mounting portion (32).

[0224] [Appendix A4] The semiconductor device according to Appendix A3, wherein the groove (40) is located closer to the terminal portion (31) than the leading edge of the mounting portion (32).

[0225] [Appendix A5] The semiconductor device according to Appendix A3, wherein the groove (40) is open in the first direction.

[0226] [Appendix A6] The semiconductor device according to any one of Appendices A1 to A5, wherein the groove (40) extends across both the terminal portion (31) and the mounting portion (32).

[0227] [Appendix A7] The semiconductor device according to Appendix A6, wherein the groove portion (40) is located closer to the mounting portion (32) than the end opposite the mounting portion (32) of both end portions of the terminal portion (31) in the first direction.

[0228] [Appendix A8] The semiconductor device according to Appendix A1, wherein the mounting portion (32) includes a mounting portion back surface (32R) that constitutes a part of the terminal back surface (30R), the groove portion (40) is recessed from the mounting portion back surface (32R) toward the terminal front surface (30S), and the wall portion (60) is configured to include the mounting portion back surface (32R).

[0229] [Appendix A9] The semiconductor device according to Appendix A1, wherein the mounting portion (32) is provided in the sealing resin (50) and includes a mounting portion back surface (32R) that constitutes a part of the terminal back surface (30R), the groove portion (40) includes: a front surface groove portion (40S) recessed from the terminal front surface (30S) toward the terminal back surface (30R), and a back surface groove portion (40R) recessed from the mounting portion back surface (32R) toward the terminal front surface (30S), and the wall portion includes: a front surface side wall portion (60S) configured to include the terminal front surface (30S), and a back surface side wall portion (60R) configured to include the mounting portion back surface (32R).

[0230] [Appendix A10] The semiconductor device according to any one of Appendices A1 to A9, wherein the groove portion (40) includes a side surface (41) and a bottom surface (42), and the side surface (41) includes a portion that curves inward toward the mounting portion (32) as it approaches the bottom surface (42).

[0231] [Appendix A11] The semiconductor device according to any one of Appendices A1 to A10, wherein the depth (H1) of the groove (40) is 10 μm or less.

[0232] [Appendix A12] The semiconductor device according to any one of Appendices A1 to A11, wherein the mounting portion (32) includes a portion that is thinner than half the thickness of the terminal portion (31).

[0233] [Appendix A13] The semiconductor device according to any one of Appendices A1 to A12, wherein the length (L2) of the mounting portion (32) in the first direction is longer than the length of the terminal portion (31) in the first direction.

[0234] [Appendix A14] The semiconductor device according to any one of Appendices A1 to A7, wherein the groove (40) includes a side surface (41) and a bottom surface (42), the semiconductor chip (20) includes a plurality of chip terminals (24) electrically connected to the plurality of terminals (30), and the chip terminals (24) are bonded to the bottom surface (42) of the groove (40).

[0235] [Appendix A15] The semiconductor device according to any one of Appendices A1 to A14, wherein the terminal portion (31) includes an inner surface (31AB) facing the mounting portion (32) in the first direction, the mounting portion (32) is provided in the sealing resin (50) and includes a mounting portion back surface (32R) that constitutes a part of the terminal back surface (30R), and the plurality of terminals (30) include a curved surface (37) that connects the inner surface (31AB) and the mounting portion back surface (32R) between the inner surface (31AB) and the mounting portion back surface (32R).

[0236] [Appendix A16] The semiconductor device according to any one of Appendices A1 to A15, wherein the terminal portion (31) includes an exposed side surface (31AA) exposed from a side surface (50A) of the sealing resin (50).

[0237] [Appendix A17] The semiconductor device according to Appendix A16, wherein the plurality of terminals (30) include a side surface conductive film (35) covering the exposed side surface (31AA) of the terminal portion (31).

[0238] [Appendix A18] The semiconductor device according to any one of Appendices A1 to A17, wherein the plurality of terminals (30) include a back surface conductive film (34) covering the terminal portion back surface (31R) of the terminal portion (31).

[0239] [Appendix A19] The semiconductor device according to any one of Appendices A1 to A18, wherein the plurality of terminals (30) contain Cu.

[0240] [Appendix A20] The semiconductor device according to any one of Appendices A1 to A19, wherein the plurality of terminals (30) are configured by a metal lead frame.

[0241] [Appendix A21] The semiconductor device according to any one of Appendices A1 to A11, wherein the plurality of terminals (30) include a protrusion (38) located at a middle portion in the thickness direction (Z direction) of a tip end surface, which is an end surface in the first direction, of the mounting portion (32).

[0242] [Appendix A22] The semiconductor device according to appendix A21, wherein the protrusion (38) is located at the center of the tip surface in the thickness direction (Z direction).

[0243] [Appendix A23] The semiconductor device according to appendix A21 or A22, wherein the protrusion (38) extends over the entire tip surface in the second direction.

[0244] [Appendix A24] The semiconductor device according to any one of Appendices A21 to A23, wherein the protrusion (38) includes two side surfaces facing opposite each other in the thickness direction (Z direction), and each of the two side surfaces includes a curved surface that curves toward each other toward the tip of the protrusion (38).

[0245] [Appendix A25] The semiconductor device according to any one of Appendices A21 to A24, wherein a ratio of a thickness of the mounting portion (32) to a thickness of the terminal portion (31) is greater than 1 / 2.

[0246] [Appendix A26] The semiconductor device according to Appendix A25, wherein a ratio of a thickness of the mounting portion (32) to a thickness of the terminal portion (31) is 4 / 5 or less.

[0247] [Appendix A27] The semiconductor device according to any one of Appendices A21 to A26, wherein the plurality of terminals (30) include a step portion (39) formed between the mounting portion (32) and the terminal portion (31) such that the mounting portion back surface (32R) is positioned closer to the terminal front surface (30S) than the terminal portion back surface (31R), and the dimension of the step portion (39) in the thickness direction (Z direction) is smaller than the thickness of the mounting portion (32).

[0248] [Appendix A28] The semiconductor device according to Appendix A27, wherein the step portion (39) includes a curved surface.

[0249] [Appendix B1] A semiconductor device comprising: a plurality of terminals (30) including a terminal surface (30S) and a terminal back surface (30R) facing the opposite side to the terminal surface (30S); a semiconductor chip (20) mounted on the plurality of terminals (30); and a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein the plurality of terminals (30) include: a terminal portion (31) including a terminal portion back surface (31R) of the terminal back surface (30R) that is exposed from the sealing resin (50); and a mounting portion (32) extending from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30), and on which the semiconductor chip (20) is mounted; and the mounting portion (32) including a mounting portion surface (32S) that constitutes a part of the terminal surface (30S), and a base portion (32P) formed in a flat plate shape, and wall portions (32Q / 60) provided separately from the base portion (32P) and rising from the mounting portion surface (32S), wherein the wall portions (32Q / 60) are located at both ends of the mounting portion (32) in a second direction perpendicular to both the thickness direction (Z direction) and the first direction, and extend in the first direction.

[0250] [Appendix B2] The semiconductor device according to Appendix B1, wherein the wall portion (60) extends across both the terminal portion (31) and the mounting portion (32) in the first direction.

[0251] [Appendix B3] The semiconductor device according to Appendix B1 or B2, wherein the mounting portion (32) includes a tip-side connecting wall (61) that connects the wall portions (60) on both sides in the second direction at the tip of the mounting portion (32).

[0252] [Appendix B4] The semiconductor device according to any one of Appendices B1 to B3, wherein the terminal (30) includes a base-end connecting wall (62) connecting the wall portions (60) on both sides in the second direction.

[0253] [Appendix B5] The semiconductor device according to any one of Appendices B1 to B4, wherein the wall portion (60) is made of a metal film.

[0254] [Appendix B6] The semiconductor device according to any one of Appendices B1 to B5, wherein the mounting portion (32) includes a mounting portion back surface (32R) that is provided within the sealing resin (50) and that constitutes a part of the terminal back surface (30R), and includes back surface sidewall portions (32Q / 60) that are provided separately from the base portion (32P), are located on both ends of the mounting portion back surface (32R) in the second direction, and extend in the first direction.

[0255] [Appendix B7] A semiconductor device comprising: a plurality of terminals (30) including a terminal surface (30S) and a terminal back surface (30R) facing the opposite side to the terminal surface (30S); a semiconductor chip (20) mounted on the plurality of terminals (30); and a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein the plurality of terminals (30) include: a terminal portion (31) including a terminal portion back surface (31R) of the terminal back surface (30R) that is exposed from the sealing resin (50); and a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30) and on which the semiconductor chip (20) is mounted; and the mounting portion (32) includes: a mounting portion back surface (32R) that is provided within the sealing resin (50) and that constitutes a part of the terminal back surface (30R), a base portion (32P) formed in a flat plate shape, including a mounting portion surface (32S) constituting a part of the terminal surface (30S) and the mounting portion back surface (32R); and a wall portion (32Q / 60) provided separately from the base portion (32P) and extending down from the mounting portion back surface (32R), wherein the wall portions (32Q / 60) are located at both ends of the mounting portion (32) in a second direction perpendicular to both the thickness direction (Z direction) and the first direction, and extend in the first direction.

[0256] [Appendix B8] The semiconductor device according to Appendix B7, wherein the mounting portion (32) includes a tip-side connecting wall (61) that connects the wall portions (60) on both sides in the second direction at a tip of the mounting portion (32).

[0257] [Appendix B9] The semiconductor device according to Appendix B7 or B8, wherein the mounting portion (32) includes a base-end connecting wall (62) that connects the wall portions (60) on both sides in the second direction at a base end of the mounting portion (32).

[0258] [Appendix B10] The semiconductor device according to any one of Appendices B7 to B9, wherein the wall portion (32Q / 60) is made of a metal film.

[0259] [Appendix C1] The method includes preparing a plurality of terminals (30) including a terminal surface (30S) and a terminal back surface (30R) facing the opposite side to the terminal surface (30S); mounting a semiconductor chip (20) on the plurality of terminals (30); and forming a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20). The preparing the plurality of terminals (30) includes forming a terminal portion (31) and a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminals (30) and in which the semiconductor chip (20) is mounted; and etching at least the mounting portion (32) to form a groove portion (40) in the mounting portion (32). The wall portion (60) extending in the first direction is formed by the terminals (30) at both ends in a second direction perpendicular to both the thickness direction (Z direction) and the first direction. A method for manufacturing a semiconductor device (10).

[0260] [Appendix C2] The method for manufacturing a semiconductor device according to Appendix C1, further comprising cleaning the plurality of terminals (30) after forming the grooves (40).

[0261] [Appendix C3] The method for manufacturing a semiconductor device according to Appendix C1 or C2, wherein preparing the plurality of terminals (30) includes: preparing a lead frame (830) including the plurality of terminals (30); and forming the groove portion (40) by partially etching at least an area of ​​the lead frame (830) corresponding to the mounting portion (32).

[0262] [Appendix C4] The method for manufacturing a semiconductor device according to any one of Appendices C1 to C3, wherein the groove portion (40) is formed after forming the mounting portion (32) by preparing the plurality of terminals (30).

[0263] [Appendix C5] The method for manufacturing a semiconductor device according to any one of Appendices C1 to C4, wherein forming the groove portion (40) includes forming the groove portion (40) so as to be recessed from a mounting portion surface (32S) in an area corresponding to at least the mounting portion (32) in the lead frame (830) toward a mounting portion back surface (32R).

[0264] [Appendix C6] The method for manufacturing a semiconductor device according to any one of Appendices C1 to C4, wherein forming the groove portion (40) includes forming the groove portion (40) so as to be recessed from a mounting portion back surface (32R) as an area corresponding to the mounting portion (32) in the lead frame (830) toward a mounting portion front surface (32S).

[0265] [Appendix C7] The method for manufacturing a semiconductor device according to any one of Appendices C1 to C4, wherein preparing the plurality of terminals (30) includes: forming a front-side groove portion (40S) recessed from a mounting portion front surface (32S) in an area corresponding to at least the mounting portion (32) in the lead frame (830) toward a mounting portion back surface (32R); and forming a back-side groove portion (40R) recessed from a mounting portion back surface (32R) in an area corresponding to the mounting portion (32) in the lead frame (830) toward the mounting portion front surface (32S).

[0266] [Appendix C8] The method for manufacturing a semiconductor device according to Appendix C1 or C2, wherein preparing the plurality of terminals (30) includes: preparing a metal plate (930) including a surface (930S) and a back surface (930R) facing opposite to the surface (930S); and selectively removing the metal plate (930) by etching from both the surface (930S) and the back surface (930R), wherein the selective removal of the metal plate (930) forms a tip surface which is an end surface in a first direction perpendicular to a thickness direction (Z direction) of the metal plate (930), and a protrusion portion (38) located in a middle portion of the tip surface in the thickness direction (Z direction).

[0267] [Appendix C9] The method for manufacturing a semiconductor device according to Appendix C8, wherein preparing the plurality of terminals (30) includes forming a recess (931) by etching a part of the surface (930S).

[0268] [Appendix C10] The method for manufacturing a semiconductor device according to Appendix C9, wherein selectively removing the metal plate (930) includes further etching the recess (931) from the surface (930S) side.

[0269] [Appendix C11] The method for manufacturing a semiconductor device according to any one of Appendices C8 to C10, wherein preparing the plurality of terminals (30) includes etching the back surface (930R) to form: a terminal portion (31) including a terminal portion back surface (31R) facing the same side as the back surface (930R) in the thickness direction (Z direction); a mounting portion (32) extending from the terminal portion (31) in the first direction; and a step portion (39) formed between the mounting portion (32) and the terminal portion (31) so as to be located closer to the front surface (930S) than the terminal portion back surface (31R) of the terminal portion (31).

[0270] [Appendix C12] The method for manufacturing a semiconductor device according to any one of Appendices C1 to C11, wherein preparing the plurality of terminals (30) includes forming the terminal portion (31) and the mounting portion (32) so that the ratio of the thickness of the mounting portion (32) to the thickness of the terminal portion (31) is greater than 1 / 2.

[0271] [Appendix C13] The method for manufacturing a semiconductor device according to Appendix C12, wherein preparing the plurality of terminals (30) includes forming the terminal portion (31) and the mounting portion (32) so that the ratio of the thickness of the mounting portion (32) to the thickness of the terminal portion (31) is 4 / 5 or less.

[0272] [Appendix D1] The method includes preparing a plurality of terminals (30) including a terminal surface (30S) and a terminal back surface (30R) facing the opposite side to the terminal surface (30S); mounting a semiconductor chip (20) on the plurality of terminals (30); and forming a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20). The preparing the plurality of terminals (30) includes forming a terminal portion (31); and a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30) and includes a flat base portion (32P) on which the semiconductor chip (20) is mounted; and a wall portion (60) that is provided separately from the base portion (32P) and rises from at least the terminal surface (30S) of the mounting portion (32). a mounting portion (32) for mounting a semiconductor device (10) on a substrate (10); a mounting portion (32) for mounting a semiconductor device (10); a mounting portion (32) for mounting a semiconductor device (10);

[0273] [Appendix D2] The method for manufacturing a semiconductor device according to Appendix D1, further comprising cleaning the plurality of terminals (30) after forming the wall portion (60).

[0274] [Appendix D3] The method for manufacturing a semiconductor device according to Appendix D1 or D2, wherein forming the wall portion (60) includes forming a metal film on the terminal surface (30S) by sputtering to form the wall portion (60).

[0275] [Appendix D4] The method for manufacturing a semiconductor device according to any one of Appendices D1 to D3, wherein the mounting portion (32) is provided in the sealing resin (50) and includes a mounting portion back surface (32R) that constitutes a part of the terminal back surface (30R), and preparing the terminal (30) includes forming back surface sidewall portions (60) that are located on both ends of the mounting portion back surface (32R) in the second direction and extend in the first direction.

[0276] [Appendix D5] The method includes preparing a plurality of terminals (30) including a terminal surface (30S) and a terminal back surface (30R) facing the opposite side to the terminal surface (30S), mounting a semiconductor chip (20) on the plurality of terminals (30), and forming a sealing resin (50) that seals the plurality of terminals (30) and the semiconductor chip (20), wherein preparing the plurality of terminals (30) includes forming a terminal portion (31) and a mounting portion (32) that extends from the terminal portion (31) in a first direction perpendicular to a thickness direction (Z direction) of the terminal (30) and includes a flat base portion (32P) on which the semiconductor chip (20) is mounted, and forming a wall portion (60) separate from the base portion (32P), wherein the mounting portion (32) is provided in the sealing resin (50) and includes a mounting portion back surface (32R) that constitutes a part of the terminal back surface (30R), the wall portions (60) are provided so as to rise down from the mounting portion rear surface (32R), are positioned at both ends of the mounting portion rear surface (32R) in the second direction, and are formed so as to extend in the first direction.

[0277] [Appendix D6] The method for manufacturing a semiconductor device according to Appendix D5, further comprising cleaning the plurality of terminals (30) after forming the rear surface sidewall portion (60).

[0278] [Appendix D7] The method for manufacturing a semiconductor device according to Appendix D5 or D6, wherein forming the wall portion (60) includes forming a metal film on the back surface (32R) of the mounting portion by sputtering to form the back surface side wall portion (60).

[0279] The above description is merely illustrative. Those skilled in the art will recognize that many more possible combinations and permutations are possible other than the components and methods (manufacturing processes) listed for the purpose of illustrating the technology of the present disclosure. The present disclosure is intended to embrace all alternatives, modifications, and variations that fall within the scope of the present disclosure, including the claims.

[0280] 10...Semiconductor device 20...Semiconductor chip 20S...Chip surface 20R...Chip back surface 21...Semiconductor substrate 21S...Main body surface 21R...Main body back surface 22...Wiring 23...Insulating layer 24...Chip terminal 24A...Terminal body 24B...Barrier layer 30...Terminal 30C...Corner terminal 30S...Terminal surface 30R...Terminal back surface 31...Terminal portion 31S...Terminal portion surface 31R...Terminal portion back surface 31A...Terminal portion side 31AA...Exposed side 31AB...Inner surface 31Q, 31QS...Wall portion 32...Mounting portion 32S...Mounting portion surface 32R...Mounting portion back surface 32A...Mounting portion side 32P...Base portion 32Q, 32QS, 32QR...Wall portion 33...Terminal connecting portion 34...Back side plating layer 35...Side side plating layer 36...Barrier layer 37... Curved surface 38... Projection 39... Step 40... Groove 40S... Front surface groove 40R... Back surface groove 41... Side 41A... Tip side 41B... Base side 41C... Curved side 42... Bottom 43... Curved surface 44... Side 44A... Tip side 44B... Base side 45... Bottom 46... Curved surface 50... Sealing resin 50S... Sealing front surface 50R... Sealing back surface 50A... Sealing side 60... Wall 60S... Front side wall 60R... Back side wall 61, 61S, 61R... Tip side connecting wall 62, 62S, 62R... Base side connecting wall 63... Wall surface 64... Wall inner surface 65... Wall outer surface 66... ​​Wall back surface 67... Wall inner surface 68... Wall outer surface 830... Lead frame 831... Lead portion 831S... Lead surface 831R... Lead back surface 850... Resin layer 860... Support substrate 900... Cleaning device 910... Spray nozzle 930... Metal plate 930S... Front surface 930R... Back surface 931,932...Recess 940S...Front surface side resist 940R...Back surface side resist 950...Back surface side resist SD...Conductive bonding material DA...Distance between wall portions in the second direction in the fourth embodiment DB...Distance between wall portions in the second direction in the fifth embodiment DS...Distance between front surface side walls in the second direction DR...Distance between back surface side walls in the second direction H1...Depth of groove portion in the first embodiment H2...Depth of groove portion in the second embodiment HS...Depth of front surface side groove portion HR...Depth of back surface side groove portion L1...Length of groove portion L2...Length of mounting portion T1...Thickness of conductive bonding material TA...Height of wall portion in the fourth embodiment TB...Height of wall portion in the fifth embodiment TS...Height of front surface side wall portion TR...Height of back surface side wall portion W1...Width of groove portion in the first embodiment W2...Width of mounting portion W3...Width of groove portion in the second embodiment WS...Width of front surface side groove portion WR...Width of back surface side groove portion CL...cutting line,

Claims

1. A semiconductor device comprising: a plurality of terminals including a terminal surface and a terminal back surface facing opposite to the terminal surface; a semiconductor chip mounted on the plurality of terminals; and a sealing resin that seals the plurality of terminals and the semiconductor chip, wherein the plurality of terminals include: a terminal portion including a back surface of the terminal portion that is exposed from the sealing resin on the back surfaces of the terminals; a mounting portion extending from the terminal portion in a first direction perpendicular to a thickness direction of the terminal and in which the semiconductor chip is mounted; a groove portion provided in at least the mounting portion and extending in the first direction; and a wall portion extending in the first direction, the wall portion being positioned at both ends in a second direction perpendicular to both the thickness direction and the first direction by the groove portion.

2. The semiconductor device according to claim 1, wherein the groove is recessed from the front surface of the terminal toward the rear surface of the terminal, and the wall is configured to include the front surface of the terminal.

3. The semiconductor device according to claim 1 or 2, wherein the groove portion extends from the terminal portion to a tip end of the mounting portion.

4. The semiconductor device according to claim 3, wherein the groove is located closer to the terminal portion than the leading edge of the mounting portion.

5. The semiconductor device according to claim 3, wherein the groove portion is open toward the first direction.

6. The semiconductor device according to any one of claims 1 to 5, wherein the groove portion extends across both the terminal portion and the mounting portion.

7. The semiconductor device according to claim 6, wherein the groove portion is located closer to the mounting portion than the end opposite the mounting portion of both ends of the terminal portion in the first direction.

8. The semiconductor device according to claim 1, wherein the mounting portion includes a back surface of the mounting portion that constitutes a part of the back surface of the terminal, the groove portion is recessed from the back surface of the mounting portion toward the front surface of the terminal, and the wall portion is configured to include the back surface of the mounting portion.

9. The semiconductor device according to claim 1, wherein the mounting portion is provided within the sealing resin and includes a mounting portion back surface constituting a part of the back surface of the terminal, the groove portion includes a front side groove portion recessed from the terminal front surface toward the terminal back surface, and a back side groove portion recessed from the mounting portion back surface toward the terminal front surface, and the wall portion includes a front side wall portion configured to include the terminal front surface, and a back side wall portion configured to include the mounting portion back surface.

10. A semiconductor device according to any one of claims 1 to 9, wherein the groove portion includes: a side surface and a bottom surface; and a curved surface provided between the side surface and the bottom surface, curving inwardly towards the mounting portion as it approaches the bottom surface.

11. The semiconductor device according to any one of claims 1 to 10, wherein the depth of the groove is 10 μm or less.

12. The semiconductor device according to any one of claims 1 to 11, wherein the mounting portion includes a portion thinner than half the thickness of the terminal portion.

13. The semiconductor device according to any one of claims 1 to 12, wherein the length of the mounting portion in the first direction is longer than the length of the terminal portion in the first direction.

14. A semiconductor device as claimed in any one of claims 1 to 7, wherein the groove portion includes a side surface and a bottom surface, the semiconductor chip includes a plurality of chip terminals electrically connected to the plurality of terminals, and the chip terminals are bonded to the bottom surface of the groove portion.

15. A semiconductor device as claimed in any one of claims 1 to 7, wherein the terminal portion includes an inner surface facing the mounting portion in the first direction, the mounting portion is provided within the sealing resin and includes a mounting portion back surface constituting a part of the back surface of the terminal, and the multiple terminals include a curved surface between the inner surface and the mounting portion back surface that connects the inner surface and the mounting portion back surface.

16. The semiconductor device according to any one of claims 1 to 15, wherein the terminal portion includes an exposed side surface that is exposed from a side surface of the sealing resin.

17. The semiconductor device according to claim 16, wherein the plurality of terminals include a side conductive film covering the exposed side surfaces of the terminal portions.

18. The semiconductor device according to any one of claims 1 to 17, wherein the plurality of terminals include a back surface conductive film covering the back surfaces of the terminal portions.

19. The semiconductor device according to any one of claims 1 to 18, wherein the plurality of terminals contain Cu.

Images