Perovskite cell and preparation method therefor, and photovoltaic module

Abstract

The present disclosure provides a perovskite cell and a preparation method therefor, and a photovoltaic module. The perovskite cell comprises a substrate, and a perovskite layer (3) and an electron transport layer which are sequentially arranged on the substrate, wherein the electron transport layer comprises a C60 layer, and the C60 layer is arranged close to the perovskite layer, wherein the perovskite layer (3) comprises a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further comprises a passivation layer (4) arranged between the perovskite layer and the C60 layer, and the passivation layer (4) comprises 1,3-diaminopropane dihydroiodide.

Description

Perovskite battery and preparation method thereof, photovoltaic module

[0001] This disclosure claims priority to a Chinese patent application filed with the Patent Office of China on November 1, 2023, with application number 202311453227.7 and public name “Perovskite Cells, Preparation Methods, and Photovoltaic Modules,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The present disclosure relates to the field of solar cell technology, and in particular to a perovskite cell and a preparation method thereof, and a photovoltaic module. Background Art

[0003] Perovskite battery is a solar cell with good application prospects. The electron transport layer in the current perovskite battery often uses C 60 materials, however, the perovskite layer is different from the C 60 There are major problems with the compatibility between the electron transport layers of the materials, which manifests as low filling and energy level mismatch in perovskite cells, thereby affecting the performance improvement of perovskite cells.

[0004] Summary of the Invention

[0005] According to some embodiments of the present disclosure, a perovskite cell is provided, wherein the perovskite cell comprises a substrate, and a perovskite layer and an electron transport layer sequentially arranged on the substrate, wherein the electron transport layer comprises C 60 layer, the C 60 A layer is disposed adjacent to the perovskite layer;

[0006] Wherein, the perovskite layer includes a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further includes a 60 A passivation layer between the layers, the passivation layer comprising 1,3-diaminopropane dihydroiodide.

[0007] In some embodiments of the present disclosure, the electron transport layer includes a first electron transport layer disposed close to the perovskite layer and a second electron transport layer disposed away from the perovskite layer, wherein the first electron transport layer is the C 60 layer.

[0008] In some embodiments of the present disclosure, the thickness of the first electron transport layer is 20 nm to 30 nm.

[0009] In some embodiments of the present disclosure, the second electron transport layer is a SnO2 layer.

[0010] In some embodiments of the present disclosure, the thickness of the second electron transport layer is 20 nm to 30 nm.

[0011] In some embodiments of the present disclosure, the thickness of the perovskite layer is 450 nm to 550 nm.

[0012] In some embodiments of the present disclosure, the perovskite cell includes the passivation layer, and the thickness of the passivation layer is the thickness of a monomolecular layer.

[0013] In some embodiments of the present disclosure, the substrate has a suede structure, and the C 60 The layer conforms to the shape of the pile structure of the substrate.

[0014] In some embodiments of the present disclosure, the substrate is a transparent conductive substrate, the perovskite cell further includes a hole transport layer, the hole transport layer is located on the transparent conductive substrate, and the perovskite layer is disposed on the hole transport layer.

[0015] In some embodiments of the present disclosure, the perovskite cell further includes a first electrode and a second electrode, the first electrode being in ohmic contact with the electron transport layer, and the second electrode being in ohmic contact with the transparent conductive substrate.

[0016] In some embodiments of the present disclosure, the substrate includes a bottom cell and an electron-hole combination layer disposed on the bottom cell.

[0017] In some embodiments of the present disclosure, the thickness of the electron-hole combination layer is 100 nm to 180 nm.

[0018] In some embodiments of the present disclosure, the electron-hole composite layer includes at least one of an indium tin oxide composite layer, an indium zinc oxide composite layer, and an aluminum zinc oxide composite layer.

[0019] In some embodiments of the present disclosure, the perovskite cell further includes a transparent conductive layer disposed on a side of the electron transport layer away from the perovskite layer, and the perovskite cell further includes a first electrode and a second electrode, the first electrode being in ohmic contact with the transparent conductive layer, and the second electrode being in ohmic contact with the bottom cell.

[0020] In some embodiments of the present disclosure, the transparent conductive layer has a thickness of 80 nm to 120 nm.

[0021] In some embodiments of the present disclosure, the transparent conductive layer is an IZO layer.

[0022] In some embodiments of the present disclosure, the first electrode and / or the second electrode are silver, copper or aluminum.

[0023] In some embodiments of the present disclosure, the thickness of the first electrode and / or the second electrode is 250 nm to 300 nm.

[0024] In some embodiments of the present disclosure, the perovskite cell further includes a hole transport layer and a self-assembled monolayer, the hole transport layer is located on the electron-hole combination layer, and the self-assembled monolayer is disposed between the hole transport layer and the perovskite layer.

[0025] In some embodiments of the present disclosure, the self-assembled monolayer is a MeO-PACz layer.

[0026] In some embodiments of the present disclosure, the hole transport layer is a nickel oxide layer.

[0027] In some embodiments of the present disclosure, the thickness of the hole transport layer is 100 nm to 150 nm.

[0028] In some embodiments of the present disclosure, the bottom cell includes at least one of an HJT silicon cell and a TopCon silicon cell.

[0029] The present disclosure also provides a method for preparing a perovskite battery, the method comprising the following steps:

[0030] providing a substrate;

[0031] forming a perovskite layer doped with 1,3-diaminopropane dihydroiodide and an electron transport layer on the substrate in sequence; and / or,

[0032] A perovskite layer, a passivation layer and an electron transport layer are sequentially formed on the substrate, wherein the passivation layer comprises 1,3-diaminopropane dihydroiodide.

[0033] In some embodiments of the present disclosure, before forming the perovskite layer, the following steps are further included: forming a hole transport layer on the substrate, and the perovskite layer is formed on the hole transport layer.

[0034] In some embodiments of the present disclosure, before forming the perovskite layer, the following steps are further included:

[0035] Providing a bottom battery with a textured surface, and forming an electron-hole recombination layer on the bottom battery after annealing;

[0036] forming the hole transport layer on the electron-hole composite layer by magnetron sputtering;

[0037] A self-assembled monolayer is spin-coated on the hole transport layer and annealed.

[0038] In some embodiments of the present disclosure, in the step of providing a bottom cell with a textured surface, the annealing temperature is 140° C. to 160° C., and the annealing time is 10 min to 20 min.

[0039] In some embodiments of the present disclosure, in the step of forming the hole transport layer by magnetron sputtering, NiO with a content of 99.99% is used. x The target material is rotated, the process pressure is 0.5Pa~0.6Pa, the process atmosphere is Ar:O2=500:5~700:5, and the number of reciprocating motions of the carrier plate in the magnetron sputtering equipment is 10~15 times.

[0040] In some embodiments of the present disclosure, the hole transport layer, the perovskite layer, and the electron transport layer maintain a consistent shape with the suede.

[0041] In some embodiments of the present disclosure, the step of forming the electron transport layer includes: evaporating a first electron transport layer, and depositing a second electron transport layer on the first electron transport layer by an ALD method.

[0042] In some embodiments of the present disclosure, in the step of evaporating the first electron transport layer, the evaporation rate is less than

[0043] In some embodiments of the present disclosure, after depositing the second electron transport layer, the method further includes:

[0044] depositing a transparent conductive layer on the second electron transport layer by a PVD method;

[0045] A first electrode is deposited on the transparent conductive layer to make ohmic contact between the first electrode and the transparent conductive layer; a second electrode is deposited on the bottom battery to make ohmic contact between the second electrode and the bottom battery.

[0046] In some embodiments of the present disclosure, the steps of sequentially forming the perovskite layer, the passivation layer, and the electron transport layer include:

[0047] forming the perovskite layer;

[0048] Spin coating a solution containing 1,3-diaminopropane dihydroiodide on the perovskite layer by a spin coating method, and obtaining a monolayer of 1,3-diaminopropane dihydroiodide as the passivation layer after annealing;

[0049] The electron transport layer is formed on the passivation layer.

[0050] In some embodiments of the present disclosure, the step of forming the perovskite layer includes:

[0051] a lead skeleton layer prepared by co-evaporation on the hole transport layer;

[0052] Dissolve FAI, MABr, and MACl in a solvent to obtain a perovskite cation solution;

[0053] The perovskite cation solution is spin-coated on the lead skeleton layer, and the perovskite layer is obtained by annealing.

[0054] In some embodiments of the present disclosure, in the step of forming the perovskite layer,

[0055] The thickness of the lead skeleton layer is 300nm to 340nm.

[0056] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the mass ratio of FAI, MABr, and MAC1 is 35:7:4.

[0057] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the spin coating speed is 3500 rpm to 4500 rpm.

[0058] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the spin coating time is 25s to 35s.

[0059] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the annealing temperature is 130°C to 160°C.

[0060] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the annealing time is 25 minutes to 35 minutes.

[0061] In some embodiments of the present disclosure, in the step of forming the perovskite layer, the relative humidity of annealing is 4% to 6%.

[0062] In some embodiments of the present disclosure, the thickness of the formed perovskite layer is 450 nm to 550 nm.

[0063] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the concentration of the solution containing 1,3-diaminopropane dihydroiodide is 0.8 mg / mL to 2.0 mg / mL, and the preparation method is to dissolve 1,3-diaminopropane dihydroiodide in an isopropanol solution.

[0064] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the spin coating speed is 3500 rpm to 4500 rpm.

[0065] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the acceleration of spin coating is 3500 rpm / s to 4500 rpm / s.

[0066] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the spin coating time is 20s to 40s.

[0067] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the air humidity during spin coating is 4% to 6%.

[0068] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the annealing temperature is 95° C. to 105° C.

[0069] In some embodiments of the present disclosure, in the step of preparing the passivation layer on the perovskite layer, the annealing time is 15 minutes to 25 minutes.

[0070] In some embodiments of the present disclosure, the steps of sequentially forming the perovskite layer doped with 1,3-diaminopropane dihydroiodide and the electron transport layer include:

[0071] a lead skeleton layer prepared by co-evaporation on the hole transport layer;

[0072] FAI, MABr, MACl, and 1,3-diaminopropane dihydroiodide are dissolved in a solvent to obtain a perovskite cation solution;

[0073] Spin-coating the perovskite cation solution on the lead skeleton layer, and annealing to obtain the perovskite layer, wherein 1,3-diaminopropane dihydroiodide is doped into the perovskite layer;

[0074] The electron transport layer is formed on the perovskite layer.

[0075] The present disclosure also provides a photovoltaic module, which includes the perovskite cell according to any of the above embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0076] In order to more clearly illustrate the technical solutions in the embodiments of the present disclosure, a brief introduction will be given below to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0077] FIG1 is a schematic structural diagram of a perovskite battery according to an embodiment of the present invention;

[0078] FIG2 is a flow chart of the preparation process of a perovskite cell according to Example 1;

[0079] FIG3 is a schematic structural diagram of a dapoxite battery according to an embodiment;

[0080] FIG4 is a flow chart of the preparation process of a dapoxite battery according to an embodiment;

[0081] FIG5 is a schematic structural diagram of a perovskite battery according to Example 3;

[0082] FIG6 is a flow chart of the preparation process of a perovskite cell according to Example 4;

[0083] FIG. 7 is a graph showing the 1,3-diaminopropane dihydroiodide solution provided in an embodiment of the present disclosure. - Schematic diagram of the binding of I vacancies to the surface of perovskite films.

[0084] Reference numerals:

[0085] 11. Bottom battery; 12. Electron-hole recombination layer; 2. Hole transport layer; 21. Hole transport layer; 22. Self-assembled monolayer; 3. Perovskite layer; 4. Passivation layer; 5. Electron transport layer; 51. First electron transport layer; 52. Second electron transport layer; 6. Transparent conductive layer; 7. First electrode; 8. Second electrode. DETAILED DESCRIPTION

[0086] The following will clearly and completely describe the technical solutions in the embodiments of the present disclosure in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present disclosure, not all of the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments of the present disclosure without making any creative efforts shall fall within the scope of protection of the present disclosure.

[0087] In this disclosure, terms such as "upper," "lower," "left," "right," "front," "back," "top," "bottom," "inner," "outer," "center," "vertical," "horizontal," "transverse," and "longitudinal" indicate positions or locations based on the positions or locations shown in the accompanying drawings. These terms are primarily intended to better describe this disclosure and its embodiments and are not intended to limit the devices, elements, or components indicated to having a specific orientation, or to being constructed or operated in a specific orientation.

[0088] Furthermore, some of the above terms may be used to express other meanings besides indicating a position or location. For example, the term "on" may also be used to express a dependency or connection in certain circumstances. Those skilled in the art will understand the specific meanings of these terms in this disclosure based on the specific circumstances.

[0089] Furthermore, the terms "installed," "disposed," "provided with," "connected," and "connected" should be interpreted broadly. For example, they can refer to fixed connections, removable connections, or integral structures; mechanical connections or electrical connections; direct connections, indirect connections through an intermediary, or internal communication between two devices, elements, or components. Those skilled in the art will understand the specific meanings of these terms in this disclosure based on specific circumstances.

[0090] Furthermore, the terms "first," "second," etc., are primarily used to distinguish between different devices, elements, or components (which may or may not be of the same type and configuration), and are not intended to indicate or imply the relative importance or quantity of the devices, elements, or components indicated. Unless otherwise specified, "plurality" means two or more.

[0091] Perovskite / crystalline silicon tandem solar cells have become a key direction for the research and development of high-efficiency solar cell technology because they can broaden the spectral response range of the cell, improve the efficiency of the solar cell, and help reduce manufacturing costs. 60 material as an electron transport layer, but C 60 There are many problems in the compatibility of materials and perovskite layers (PVSK layers), which are manifested in the low filling capacity of perovskite battery devices and poor energy level matching, which will lead to the conversion efficiency of perovskite batteries.

[0092] The technical solutions provided by the present disclosure will be further described below with reference to the embodiments and drawings.

[0093] In a first aspect, the present disclosure provides a perovskite battery, which includes a substrate, and a hole transport layer, a perovskite layer, and an electron transport layer sequentially disposed on the substrate, wherein the electron transport layer includes C 60 Layer, C 60 The layer is arranged close to the perovskite layer; wherein the perovskite layer includes a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further includes a layer arranged between the perovskite layer and the C 60 A passivation layer is provided between the layers, the passivation layer comprising 1,3-diaminopropane dihydroiodide.

[0094] The perovskite cell can be a single-junction perovskite cell or a perovskite / crystalline silicon tandem cell. When the perovskite cell is a different type of solar cell, the substrate of the corresponding perovskite cell also has a different structure. Furthermore, the number of hole transport layers can be one, two, or more layers, and the number of electron transport layers can be one, two, or more layers.

[0095] By adding 1,3-diaminopropane dihydroiodide material into the perovskite layer, or by adding a passivation layer containing 1,3-diaminopropane dihydroiodide material between the perovskite layer and the electron transport layer, the problem of poor compatibility between the perovskite layer and the electron transport layer can be effectively improved, especially the compatibility between the perovskite layer and the C 60 Compatibility issues between electron transport layers.

[0096] The chemical formula of 1,3-diaminopropane dihydroiodide is C3H 12I2 is a transparent substance obtained by the self-polymerization of 1,3-diaminopropane in the presence of hydroiodic acid. The surface of 1,3-diaminopropane dihydroiodide contains numerous functional groups, including short-chain diamine molecules containing free hydrochloric acid groups. These functional groups can be effectively attached to the surface of the relevant film layer through the combined action of NC bonds, strong covalent bonds, non-covalent bonds, and π-π* bonds. This allows the perovskite layer or passivation layer containing this material to serve as an anchor for metal ions and an active site for in situ growth. In particular, the passivation layer containing this material can be anchored at the upper interface of the perovskite layer (i.e., the interface on the side of the perovskite layer away from the hole transport layer), forming a monolayer and reducing the amount of unreacted metal cations at the upper interface of the perovskite. Furthermore, 1,3-diaminopropane dihydroiodide exhibits excellent light-harvesting and electrical conductivity, with good light-harvesting and electron-transfer capabilities, effectively improving the optical and electrical properties of the matrix material.

[0097] In the embodiment of the present disclosure, 1,3-diaminopropane dihydroiodide is used in the perovskite layer or the passivation layer between the perovskite layer and the electron transport layer. On the one hand, 1,3-diaminopropane dihydroiodide can be used to passivate the electron transport layer through the C 60 Form bonds between and anchor C 60 , so that C 60 The energy band of C 60 The energy levels between the C and perovskite layers are more closely matched, and the C 60 The surface of the perovskite layer is more evenly covered, thereby greatly improving the charge transfer efficiency and stability of the battery. On the other hand, the amino group in 1,3-diaminopropane dihydroiodide also forms a covalent bond with the perovskite. The I- in 1,3-diaminopropane dihydroiodide combines with the I vacancy on the surface of the perovskite layer, which can change the surface potential of the perovskite layer and reduce non-radiative recombination. It can be seen that the embodiment of the present disclosure can not only improve the C of the perovskite layer and the electron transport layer through the above improvements, but also improve the stability of the battery. 60 The energy levels between them are more matched, which promotes a more uniform coverage of the electron transport layer on the perovskite layer. It also has a good passivation effect, which increases the device filling of the solar cell, reduces the open circuit voltage loss, and improves the photoelectric conversion efficiency.

[0098] Furthermore, in perovskite cells, the substrate has a suede structure, C 60 The shape of the layer and the textured structure of the substrate are consistent. For example, the perovskite cell is a perovskite / crystalline silicon tandem cell, and the substrate is a bottom cell with a textured structure. When the hole transport layer, perovskite layer, and electron transport layer are sequentially formed on the bottom cell with a textured structure, these film layers have a textured structure that is consistent with the textured structure of the bottom cell, thereby achieving the fully conformal structural characteristics of the solar cell. This allows the solar cell to utilize the textured structure to improve the utilization rate of sunlight.

[0099] In order to make the perovskite layer maintain a velvet structure consistent with the substrate, a two-step method of co-evaporation and spin coating can be used to prepare the above-mentioned fully conformal perovskite / crystalline silicon stacked battery. That is, first, a lead skeleton layer is co-evaporated on the hole transport layer, and then a perovskite cation solution is spin-coated on the lead skeleton layer so that the perovskite cation solution can react with the lead skeleton layer to form a perovskite layer with a velvet structure, and then an electron transport layer with a velvet structure is formed on the perovskite layer. However, further forming a C-type crystalline silicon layer with good conformal structure on the perovskite layer with a velvet structure is not a good method. 60 The velvet structure is usually a pyramid structure with a protruding tower top and a concave tower bottom. This velvet structure makes C 60 The layer is difficult to evenly cover the velvet structure of the perovskite layer. However, the embodiment of the present disclosure has 1,3-diaminopropane dihydroiodide in the perovskite layer or in the passivation layer, which is suitable for C 60 Has an anchoring effect, which can make C 60 It can be more evenly covered on the perovskite layer, especially on the perovskite layer with a velvet structure, thereby ensuring C 60 The layer also has a good suede structure to achieve shape retention requirements.

[0100] In addition, the structure of 1,3-diaminopropane dihydroiodide in the perovskite battery of the embodiment of the present disclosure includes three embodiments. As an optional embodiment, 1,3-diaminopropane dihydroiodide may be incorporated into the perovskite layer, that is, the perovskite layer includes a perovskite material and a 1,3-diaminopropane dihydroiodide material. As another optional embodiment, a passivation layer may be added between the perovskite layer and the electron transport layer, and the passivation layer uses 1,3-diaminopropane dihydroiodide. As another optional embodiment, 1,3-diaminopropane dihydroiodide may be incorporated into the perovskite layer, and a passivation layer containing 1,3-diaminopropane dihydroiodide may be added between the perovskite layer and the electron transport layer.

[0101] When a passivation layer is provided between the perovskite layer and the electron transport layer, the thickness of the passivation layer is the thickness of a monolayer of 1,3-diaminopropane dihydroiodide. A monolayer thickness refers to a film layer that is only one molecule thick. Controlling the passivation layer thickness to a monolayer can reduce the impact on electron transport performance and avoid the problem of reduced conductivity caused by a passivation layer thickness greater than a monolayer.

[0102] As mentioned above, the perovskite cell of the embodiment of the present disclosure may be a perovskite single junction cell or a perovskite / crystalline silicon tandem cell.

[0103] In an optional embodiment, the perovskite cell is a perovskite / crystalline silicon tandem cell. The structure of this type of perovskite cell is described in detail below.

[0104] The substrate of the perovskite / crystalline silicon stacked cell includes a bottom cell and an electron-hole recombination layer provided on the bottom cell, and the hole transport layer is located on the electron-hole recombination layer;

[0105] The perovskite / crystalline silicon stacked cell also includes a transparent conductive layer arranged on the side of the electron transport layer away from the perovskite layer. The perovskite cell also includes a first electrode and a second electrode. The first electrode is in ohmic contact with the transparent conductive layer, and the second electrode is in ohmic contact with the bottom cell.

[0106] In order to obtain higher photoelectric conversion efficiency, a perovskite solar cell is used as the top cell and a silicon-based solar cell with a velvet structure is used as the bottom cell. By combining the above-mentioned top cell and bottom cell, a fully conformal perovskite / crystalline silicon tandem cell can be obtained. Among them, in order to solve the problem of low filling and / or energy level mismatch between the perovskite layer and the electron transport layer in the fully conformal perovskite / silicon tandem cell, 1,3-diaminopropane dihydroiodide is added to the perovskite layer or the additional passivation layer to passivate the perovskite layer. On the one hand, 1,3-diaminopropane dihydroiodide can passivate the electron transport layer C 60 Forming bonds and anchoring C 60 , so that C 60 More uniform coverage on the perovskite layer surface, C 60 The energy band bending is more closely matched to the energy level of the perovskite layer, and the charge transfer efficiency and stability of the perovskite battery are greatly improved. On the other hand, the amino groups in the 1,3-diaminopropane dihydroiodide solution will also combine with the perovskite to form covalent bonds, passivating the I vacancies on the interface of the perovskite layer, changing the surface potential of the perovskite layer, and reducing non-radiative recombination, thereby reducing the open-circuit voltage loss and improving the photoelectric conversion efficiency.

[0107] The bottom cell comprises at least one of an HJT silicon cell and a TopCon silicon cell. The electron-hole recombination layer comprises at least one of an indium tin oxide recombination layer, an indium zinc oxide recombination layer, and an aluminum zinc oxide recombination layer, and the thickness of the electron-hole recombination layer is 100 nm to 180 nm. The transparent conductive layer is an IZO (indium zinc oxide) layer. The first electrode and / or the second electrode comprises silver, copper, or aluminum, and the thickness of the first electrode and / or the second electrode is 250 nm to 300 nm. The thickness of the perovskite layer is 450 nm to 550 nm. The hole transport layer and the electron transport layer are further described below.

[0108] In the above-mentioned perovskite / crystalline silicon tandem cell, the use of 1,3-diaminopropane dihydroiodide in the perovskite layer or the additional passivation layer can effectively solve the problem of the interaction between perovskite and C 60The adaptability problem of the two can not only make the energy levels of the two more matched, but also play a good passivation role, and also make C 60 Uniformly cover the corresponding film layer. Especially for the fully conformal perovskite / crystalline silicon stacked cells, 1,3-diaminopropane dihydroiodide is used to 60 Good anchoring effect, making C 60 It can cover the velvet structure more evenly, which is a technical effect that is difficult to achieve through conventional spin coating or evaporation operations.

[0109] In the aforementioned perovskite / crystalline silicon tandem cell, the hole transport layer can be provided as one or more layers. Furthermore, a self-assembled monolayer can be provided between the hole transport layer and the perovskite layer. The first hole transport layer is a nickel oxide layer having a thickness of 100 nm to 150 nm. The self-assembled monolayer is a MeO-PACz layer, where MeO-PACz is [2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid.

[0110] Among them, nickel oxide NiO x It is an excellent hole transport layer material. Its wide band gap effectively reduces parasitic absorption, its energy level matches that of the perovskite layer, and it selectively extracts holes. Its high carrier mobility effectively reduces charge transfer losses, and its high stability improves the lifespan of solar cells. Controlling the thickness of the hole transport layer within the range of 100nm to 150nm effectively balances the layer's transmittance and electrical performance, avoiding issues such as increased transmittance but poor coverage when the thickness is too thin, and decreased transmittance and increased overall cell resistance, leading to a decrease in the cell's short-circuit current density, when the thickness is too thick.

[0111] MeO-2PACz improves the nucleation and growth of the perovskite material placed on it, forming a dense and uniform interface and promoting its interaction with the perovskite layer to passivate interface defects. By providing these two different hole transport layers, the hole transport effect can be better achieved.

[0112] In addition, the electron transport layer can also be provided with one or more layers. In an optional embodiment, the electron transport layer includes two layers, one is a first electron transport layer provided close to the perovskite layer, and the other is a second electron transport layer provided away from the perovskite layer, and the transparent conductive layer is provided on the side of the second electron transport layer away from the first electron transport layer. Among them, the first electron transport layer is C 60 The second electron transport layer is a SnO2 layer, and the thickness of the layer is 20nm to 30nm.

[0113] By setting up two different electron transport layers, the electron transport effect can be better achieved. 60 It works synergistically with the inorganic metal oxide SnO2 to improve the performance of the electron transport layer. 60 The band gap is small and cannot block holes as effectively as metal oxide SnO2, but C 60 The material can effectively passivate surface defects, reduce hysteresis and increase stability. 60 The double electron transport layer structure with inorganic metal oxide SnO2 can fully combine the advantages of these two materials, which can block holes and increase electron transport. Moreover, the second electron transport layer can not only play the role of transmitting electrons, but also play a buffering role. In addition, since the first electron transport layer is C 60 The layer is arranged adjacent to the perovskite layer or the additional passivation layer, so it can be more evenly covered on the velvet structure under the anchoring effect of 1,3-diaminopropane dihydroiodide, and can also change the surface potential of the perovskite layer to make the perovskite and C 60 The energy levels are more matched.

[0114] In another optional embodiment, the perovskite cell is a single-junction perovskite cell. The structure of this type of perovskite cell is described below.

[0115] The perovskite single-junction cell has a transparent conductive substrate as its substrate, and a hole transport layer is located on the transparent conductive substrate. The perovskite single-junction cell also includes a first electrode and a second electrode. The first electrode is in ohmic contact with the transparent conductive layer, and the second electrode is in ohmic contact with the bottom cell. The transparent conductive substrate is, for example, an ITO substrate. The first electrode and / or the second electrode may comprise silver, copper, or aluminum.

[0116] When using perovskite single-junction cells, using 1,3-diaminopropane dihydroiodide in the perovskite layer or the additional passivation layer can also improve the perovskite and C 60 The purpose of adaptability is to make the energy levels of the two more matched. The I- in 1,3-diaminopropane dihydroiodide can be compatible with the I on the surface of the perovskite layer. - The vacancy combination increases the filling of the device and improves the device performance of the solar cell.

[0117] In a second aspect, the present disclosure further provides a method for preparing the perovskite battery according to the first aspect, the method comprising the following steps:

[0118] providing a substrate;

[0119] forming a hole transport layer on a substrate;

[0120] A perovskite layer doped with 1,3-diaminopropane dihydroiodide and an electron transport layer are sequentially formed on the hole transport layer; and / or a perovskite layer, a passivation layer and an electron transport layer are sequentially formed on the hole transport layer, wherein the passivation layer includes 1,3-diaminopropane dihydroiodide.

[0121] That is to say, according to the location of the 1,3-diaminopropane dihydroiodide material, the preparation method of the perovskite battery of the embodiment of the present disclosure can be divided into three cases. The first case is that the 1,3-diaminopropane dihydroiodide material is set in the additional passivation layer. In this case, the preparation method sequentially forms a perovskite layer, a passivation layer and an electron transport layer on the hole transport layer. The passivation layer includes 1,3-diaminopropane dihydroiodide, thereby utilizing 1,3-diaminopropane dihydroiodide to improve the perovskite material and C 60 Energy level adaptation between materials, filling of defect sites in perovskite and anchoring of C 60 Another method is to incorporate 1,3-diaminopropane dihydroiodide into the perovskite layer. In this case, the preparation method sequentially forms a perovskite layer and an electron transport layer on the hole transport layer. During the formation of the perovskite layer, 1,3-diaminopropane dihydroiodide is incorporated therein, so that the perovskite layer includes the perovskite material and 1,3-diaminopropane dihydroiodide, which can also play the above-mentioned role. The third method is to incorporate 1,3-diaminopropane dihydroiodide into the perovskite layer and also add a passivation layer containing 1,3-diaminopropane dihydroiodide.

[0122] The following is a more detailed description of the preparation method of the perovskite layer, passivation layer and other film layers in the perovskite cell for the first case - when the 1,3-diaminopropane dihydroiodide material is provided in the additional passivation layer.

[0123] In the first case, the method for preparing a perovskite cell comprises the steps of sequentially forming a perovskite layer, a passivation layer, and an electron transport layer on the hole transport layer:

[0124] forming a perovskite layer on the hole transport layer;

[0125] A solution containing 1,3-diaminopropane dihydroiodide is spin-coated on the perovskite layer by a spin coating method, and a monolayer of 1,3-diaminopropane dihydroiodide is obtained after annealing as a passivation layer;

[0126] An electron transport layer is formed on the passivation layer.

[0127] The 1,3-diaminopropane dihydroiodide solution is spin-coated on the perovskite layer by the spin coating method, which has the advantages of simple equipment, easy operation, no need for a vacuum environment, low cost, and green environmental protection.

[0128] The step of forming a perovskite layer on the hole transport layer specifically includes:

[0129] a lead skeleton layer prepared by co-evaporation on the hole transport layer;

[0130] Dissolve FAI, MABr, and MACl in a solvent to obtain a perovskite cation solution;

[0131] The perovskite cation solution is spin-coated on the lead skeleton layer and annealed to obtain the perovskite layer. Wherein, FAI refers to methylammonium iodide, MABr refers to methylammonium bromide, and MACl refers to methylammonium chloride.

[0132] The embodiment of the present disclosure adopts a two-step method combining co-evaporation and spin coating to prepare the perovskite layer. This method is particularly suitable for achieving the velvet conformal of the perovskite layer in the preparation process of the fully conformal perovskite / crystalline silicon tandem battery. Although the related art uses a method combining co-evaporation and spin coating to prepare the perovskite layer, the perovskite surface still has many defect sites, which affects the filling performance of the solar cell. However, since the present disclosure uses 1,3-diaminopropane dihydroiodide to improve the performance of the perovskite, the amino group in 1,3-diaminopropane dihydroiodide can combine with the perovskite to form a covalent bond, and the I in 1,3-diaminopropane dihydroiodide can form a covalent bond with the perovskite. - It can passivate the I vacancies on the interface of the perovskite layer, which not only changes the surface potential of the perovskite layer, but also reduces non-radiative recombination, greatly increasing the filling performance of the solar cell and improving the performance of the solar cell.

[0133] Furthermore, in the step of forming a perovskite layer on the hole transport layer:

[0134] The thickness of the lead skeleton layer is 300nm to 340nm; and / or,

[0135] The mass ratio of FAI, MABr and MACl is 0.35:0.07:0.04; and / or,

[0136] The spin coating speed is 3500 rpm to 4500 rpm; and / or,

[0137] The spin coating time is 25s to 35s; and / or,

[0138] The annealing temperature is 130° C. to 160° C.; and / or,

[0139] The annealing time is 25 min to 35 min; and / or,

[0140] The relative humidity of annealing is 4% to 6%; and / or,

[0141] The thickness of the formed perovskite layer is 450 nm to 550 nm.

[0142] On the lead skeleton layer of the above thickness, the cationic solution of the above mass ratio is spin-coated according to the above spin-coating speed, spin-coating time and annealing conditions to react with the lead skeleton and anneal, which is conducive to forming a perovskite layer of the above thickness.

[0143] The steps of preparing a passivation layer on the perovskite layer are as follows:

[0144] 1,3-diaminopropane dihydroiodide was dissolved in isopropanol solution to prepare a solution containing 1,3-diaminopropane dihydroiodide with a concentration of 0.8mg / mL to 2.0mg / mL. The solution was then spin-coated on the perovskite layer and annealed to obtain a passivation layer. At this concentration of 1,3-diaminopropane dihydroiodide solution, the battery efficiency was higher. As the concentration increased, the battery efficiency decreased. Excessive 1,3-diaminopropane dihydroiodide passivation would provide more I - , forming iodine interstitial defects and hindering the transport of carriers, resulting in a decrease in short-circuit current density and fill factor.

[0145] Among them, the spin coating speed is 3500rpm~4500rpm; the spin coating acceleration is 3500rpm / s~4500rpm / s; the spin coating time is 20s~40s; the spin coating air humidity is 4%~6%; the annealing temperature is 95℃~105℃; and the annealing time is 15min~25min. When the above-mentioned passivation layer is prepared by spin coating, the spin coating speed, acceleration, spin coating time and annealing process have a great influence on the structure, morphology and performance of the film layer. Under the above-mentioned spin coating conditions of the embodiment of the present disclosure, the 1,3-diaminopropane dihydroiodide solution particles grow rapidly and are more evenly distributed on the surface of the perovskite layer, which is also more conducive to the passivation layer to play its passivation role and to the C in the electron transport layer formed thereon. 60 The anchoring effect of C 60 Even if formed on a suede structure, it can still be more evenly covered on the suede surface of the passivation layer due to the anchoring of 1,3-diaminopropane dihydroiodide, rather than uneven coverage due to the pyramid-shaped top and bottom of the suede.

[0146] The following is a more detailed description of the second case - when 1,3-diaminopropane dihydroiodide material is doped into the perovskite layer, the preparation method of the perovskite layer in the perovskite cell.

[0147] In the second case, the method for preparing a perovskite cell comprises the steps of sequentially forming a perovskite layer doped with 1,3-diaminopropane dihydroiodide and an electron transport layer on the hole transport layer, comprising:

[0148] a lead skeleton layer prepared by co-evaporation on the hole transport layer;

[0149] FAI, MABr, MACl, and 1,3-diaminopropane dihydroiodide are dissolved in a solvent to obtain a perovskite cation solution;

[0150] The perovskite cation solution is spin-coated on the lead skeleton layer, and the perovskite layer is obtained by annealing, wherein the perovskite layer is doped with 1,3-diaminopropane dihydroiodide;

[0151] An electron transport layer is formed on the perovskite layer.

[0152] By dissolving 1,3-diaminopropane dihydroiodide in a perovskite cation solution, the 1,3-diaminopropane dihydroiodide is successfully incorporated into the perovskite material during the reaction between the perovskite cation and the lead skeleton. This strengthens the covalent bond between the 1,3-diaminopropane dihydroiodide and the perovskite. Furthermore, this significantly improves the crystallinity of the perovskite layer, resulting in clearer grains, enhanced conductivity, and stronger orientation.

[0153] It is understandable that when preparing the perovskite layer in the second case, the mass ratio of FAI, MABr, and MACl, the spin coating conditions, and the annealing conditions can still adopt the same conditions as those in the first case, and will not be repeated here.

[0154] In addition, in the method for preparing the perovskite cell according to the embodiment of the present disclosure, the step of providing the substrate specifically includes: performing a texture treatment on the substrate;

[0155] The hole transport layer, the perovskite layer, and the electron transport layer are sequentially formed on the substrate, and are consistent with the shape of the suede surface.

[0156] The texture treatment of the substrate is beneficial to improve the utilization efficiency of sunlight. Therefore, the embodiment of the present disclosure performs a texture treatment on the substrate, and as mentioned above, a film structure such as a perovskite layer can also be prepared by a two-step method such as co-evaporation and spin coating to keep the texture shape consistent with the substrate, thereby achieving a texture-full shape of the perovskite cell. Although the fully-shaped perovskite cell in the related art is difficult to achieve C 60 However, since the embodiment of the present disclosure has 1,3-diaminopropane dihydroiodide in the perovskite layer or the additional passivation layer, the interface passivation of the perovskite layer and the C 60 The anchoring of these materials can achieve uniform coverage of these materials, which in turn helps to improve the stability and electrical performance of perovskite cells.

[0157] The preparation methods of the disclosed embodiments can be categorized into methods for preparing perovskite / crystalline silicon tandem cells and single-junction perovskite cells, depending on the type of perovskite cell. The preparation processes for the perovskite layer and / or passivation layer are identical for both methods, differing primarily in the preparation of the substrate. This is described below.

[0158] When the perovskite cell is a perovskite / crystalline silicon tandem cell, the preparation method of the perovskite cell comprises the following steps:

[0159] Providing a bottom battery with a velvet surface, and forming an electron-hole recombination layer on the bottom battery after annealing;

[0160] forming a hole transport layer on the electron-hole composite layer by magnetron sputtering;

[0161] Spin-coating a self-assembled monolayer on the hole transport layer and annealing;

[0162] A lead skeleton layer is obtained by co-evaporation on the self-assembled monolayer, FAI, MABr and MACl are dissolved in a solvent to obtain a perovskite cation solution, the perovskite cation solution is spin-coated on the lead skeleton layer, and annealed to form a perovskite layer;

[0163] A solution containing 1,3-diaminopropane dihydroiodide is spin-coated on the perovskite layer and annealed to form a passivation layer;

[0164] evaporating a first electron transport layer on the passivation layer;

[0165] depositing a second electron transport layer on the first electron transport layer by an ALD method;

[0166] depositing a transparent conductive layer on the second electron transport layer by a PVD method;

[0167] A first electrode is deposited on the transparent conductive layer to make ohmic contact between the first electrode and the transparent conductive layer; a second electrode is deposited on the bottom battery to make ohmic contact between the second electrode and the bottom battery.

[0168] Furthermore, in the step of providing a bottom battery with a textured surface as a substrate, the annealing temperature is 140° C. to 160° C. and the annealing time is 10 min to 20 min; and / or,

[0169] In the step of forming a hole transport layer by magnetron sputtering on the electron-hole recombination layer, NiO with a content of 99.99% is used. x Rotating target, process pressure is 0.5Pa~0.6Pa, process atmosphere is Ar:O2=500:5~700:5, and the carrier in magnetron sputtering equipment reciprocates 10~15 times; and / or,

[0170] In the step of evaporating the first electron transport layer on the passivation layer, the evaporation rate is less than

[0171] When the perovskite cell is a perovskite single-junction cell, the preparation method of the perovskite cell comprises the following steps:

[0172] providing a transparent conductive substrate;

[0173] forming a hole transport layer on a transparent conductive substrate by magnetron sputtering;

[0174] A lead skeleton layer is obtained by co-evaporation on the hole transport layer, FAI, MABr and MACl are dissolved in a solvent to obtain a perovskite cation solution, the perovskite cation solution is spin-coated on the lead skeleton layer, and annealed to form a perovskite layer;

[0175] A solution containing 1,3-diaminopropane dihydroiodide is spin-coated on the perovskite layer and annealed to form a passivation layer;

[0176] evaporating an electron transport layer on the passivation layer;

[0177] A first electrode is deposited on the electron transport layer to make ohmic contact between the first electrode and the electron transport layer; a second electrode is deposited on the transparent conductive substrate to make ohmic contact between the second electrode and the transparent conductive substrate.

[0178] The technical solution of the present disclosure will be further explained below in conjunction with more specific embodiments and experimental test results.

[0179] Example 1

[0180] This embodiment provides a perovskite cell, as shown in Figure 1, which is a schematic structural diagram of a perovskite cell in Example 1. The perovskite cell is a perovskite / crystalline silicon stacked cell. As shown in Figure 1, the perovskite cell includes: a bottom cell 11 and an electron-hole recombination layer 12, a hole transport layer 21, a self-assembled monolayer 22, a perovskite layer 3, a passivation layer 4, a first electron transport layer 51, a second electron transport layer 52, and a transparent conductive layer 6 sequentially arranged on the bottom cell 11. The perovskite cell also includes a first electrode 7 and a second electrode 8. The first electrode 7 is in ohmic contact with the transparent conductive layer 6, and the second electrode 8 is in ohmic contact with the bottom cell 11.

[0181] The bottom battery 11 is a HJT battery, the electron-hole recombination layer 12 is an ITO layer, the hole transport layer 21 is a nickel oxide layer, the self-assembled monolayer 22 is MeO-2PACz, the passivation layer 4 is a 1,3-diaminopropane dihydroiodide layer, and the first electron transport layer 51 is C 60 layer, the second electron transport layer 52 is a SnO2 layer, the transparent conductive layer 6 is an IZO layer, and the first electrode 7 and the second electrode 8 are both silver.

[0182] This embodiment also provides a method for preparing the perovskite battery, as shown in Figure 2, which is a flow chart of the preparation process of the perovskite battery in Example 1. As shown in Figure 2, the method for preparing the perovskite battery includes the following steps:

[0183] Providing a substrate: providing a 300 μm HJT cell as a bottom cell 11, and the bottom cell 11 is textured to have a textured surface. The bottom cell 11 is annealed on a hot plate at a temperature of 150° C. for 15 minutes. An electron-hole recombination layer 12 having a thickness of 150 nm to 180 nm is formed on the annealed bottom cell 11.

[0184] Forming the hole transport layer 21: forming NiO on the electron-hole recombination layer 12 by magnetron sputtering x The hole transport layer 21 is made of 99.99% NiO in the magnetron sputtering process. x The target is rotated, the process pressure is 0.5Pa to 0.6Pa, the process atmosphere is Ar:O2=500:5 to 700:5, the carrier in the magnetron sputtering equipment reciprocates 10 to 15 times, and the thickness of the hole transport layer 21 is 100nm to 150nm;

[0185] Forming a self-assembled monolayer 22: 5 mg of MeO-2PACz was weighed and dissolved in anhydrous ethanol to obtain a 1 mg / mL solution. The solution was spin-coated onto the hole transport layer 21 at a rotation speed of 4000 rpm, an acceleration of 2000 rpm, and a spin-coating time of 30 s. The solution was then annealed at an annealing temperature of 100° C. and an annealing time of 10 min to form a self-assembled monolayer 22.

[0186] Forming a lead skeleton layer: placing the substrate with the self-assembled monolayer 22 formed thereon into a multi-element co-evaporation device for co-evaporation to form a 320 nm lead skeleton layer on the self-assembled monolayer 22;

[0187] Forming perovskite layer 3: 0.35 g of FAI, 0.07 g of MABr, and 0.04 g of MACl were weighed and dissolved in 1 mL of anhydrous ethanol, and stirred for 1 hour to obtain a perovskite cation solution; 150 μL of the perovskite cation solution was spin-coated onto the lead skeleton layer at a speed of 4000 rpm for 30 seconds, and then annealed at 150°C for 30 minutes at a relative humidity of 5% to form a perovskite layer 3 with a thickness of 450 nm to 500 nm;

[0188] Forming a passivation layer 4: At room temperature, dissolve 1 mg to 2 mg of solid powder of 1,3-diaminopropane dihydroiodide in 1 mg to 2 mg of isopropanol solution, and fully disperse in a mixer for 24 hours to obtain a solution containing 1,3-diaminopropane dihydroiodide with a concentration of 1 mg / mL; draw 50 μL to 100 μL of the solution containing 1,3-diaminopropane dihydroiodide and spin-coat it onto the perovskite layer 3 at a speed of 4000 rpm, an acceleration of 4000 rpm / s, a spin coating time of 30 seconds, and an air relative humidity of 5%, and then anneal at 100°C for 20 minutes to form a monolayer passivation layer 4;

[0189] Forming the first electron transport layer 51: The first electron transport layer 51 is deposited on the passivation layer 4 by using a metal electrode evaporation device. The evaporation conditions are: weigh 0.2g to 0.3g of C 60 In the metal evaporation boat, The rate of evaporation coating is 60 The thickness of the first electron transport layer 51 is 20 nm to 30 nm;

[0190] Forming the second electron transport layer 52: depositing a SnO2 layer as the second electron transport layer 52 on the first electron transport layer 51 by the ALD method, wherein the thickness of the second electron transport layer 52 is 20 nm to 30 nm; wherein the first electron transport layer 51 and the second electron transport layer 52 together constitute the electron transport layer 5;

[0191] Forming a transparent conductive layer 6: depositing an IZO transparent conductive layer 6 on the second electron transport layer 52 by a PVD method;

[0192] Forming electrodes: depositing a first electrode 7 on the transparent conductive layer 6 by metal electrode evaporation equipment, so that the first electrode 7 is in ohmic contact with the transparent conductive layer 6, and depositing a second electrode 8 on the bottom battery 11, so that the second electrode 8 is in ohmic contact with the bottom battery 11. The thickness of the first electrode 7 and the second electrode 8 is 250nm to 300nm.

[0193] Example 2

[0194] This embodiment provides a perovskite cell, as shown in Figure 3, which is a schematic structural diagram of a second perovskite cell in the embodiment. The perovskite cell is a perovskite / crystalline silicon stacked cell. As shown in Figure 3, the perovskite cell includes: a bottom cell 11 and an electron-hole recombination layer 12, a hole transport layer 21, a self-assembled monolayer 22, a perovskite layer 3, a first electron transport layer 51, a second electron transport layer 52, and a transparent conductive layer 6 sequentially arranged on the bottom cell 11. The perovskite cell also includes a first electrode 7 and a second electrode 8. The first electrode 7 is in ohmic contact with the transparent conductive layer 6, and the second electrode 8 is in ohmic contact with the bottom cell 11.

[0195] The bottom battery 11 is a HJT battery, the electron-hole recombination layer 12 is an ITO layer, and the hole transport layer 21 is a NiO x layer, the self-assembled monolayer 22 is MeO-2PACz, the perovskite layer 3 includes a perovskite material and 1,3-diaminopropane dihydroiodide, and the first electron transport layer 51 is C 60 layer, the second electron transport layer 52 is a SnO2 layer, the transparent conductive layer 6 is an IZO layer, and the first electrode 7 and the second electrode 8 are both silver.

[0196] This embodiment also provides a method for preparing the perovskite battery, as shown in Figure 4, which is a flow chart of the preparation process of the second perovskite battery in the embodiment. As shown in Figure 4, the method for preparing the perovskite battery includes the following steps:

[0197] Providing a substrate: providing a 140 μm HJT cell as a bottom cell 11, and the bottom cell 11 is textured to have a textured surface. The bottom cell 11 is annealed on a hot plate at a temperature of 150° C. for 15 minutes. An electron-hole recombination layer 12 having a thickness of 130 nm to 150 nm is formed on the annealed bottom cell 11.

[0198] Forming the hole transport layer 21: forming the hole transport layer 21 NiO on the electron hole recombination layer 12 by magnetron sputtering x layer, using 99.99% NiO in the magnetron sputtering process x The target is rotated, the process pressure is 0.5Pa to 0.6Pa, the process atmosphere is Ar:O2=500:5 to 700:5, and the carrier in the magnetron sputtering equipment reciprocates 10 to 15 times, and the thickness of the hole transport layer 21 is 100nm;

[0199] Forming a self-assembled monolayer 22: Weigh 5 mg of MeO-2PACz and dissolve it in anhydrous ethanol to obtain a 1 mg / mL solution. The solution is spin-coated onto the hole transport layer 21 at a rotation speed of 4000 rpm, an acceleration of 2000 rpm, and a spin-coating time of 30 s. The solution is then annealed at an annealing temperature of 100° C. and an annealing time of 10 min to form a monolayer self-assembled monolayer 22.

[0200] Forming a lead skeleton layer: placing the substrate with the self-assembled monolayer 22 formed thereon into a multi-element co-evaporation device for co-evaporation to form a 320 nm lead skeleton layer on the self-assembled monolayer 22;

[0201] Forming a perovskite layer 3: 1 mg of solid powder of 1,3-diaminopropane dihydroiodide, 0.35 g of FAI, 0.07 g of MABr, and 0.04 g of MACl were weighed respectively, dissolved in 1 mL of anhydrous ethanol, and fully dispersed in a mixer for 24 hours to obtain a perovskite cation solution doped with 1,3-diaminopropane dihydroiodide; 150 μL of the perovskite cation solution was spin-coated on the lead skeleton layer at a speed of 4000 rpm and a spin coating time of 30 seconds, and then annealed at 150° C. for 30 minutes at a relative humidity of 5% to form a perovskite layer 3 with a thickness of 460 nm to 500 nm. The perovskite layer 3 not only forms the perovskite material but also incorporates 1,3-diaminopropane dihydroiodide into the layer;

[0202] Forming the first electron transport layer 51: The first electron transport layer 51 is deposited on the perovskite layer 3 by using a metal electrode evaporation device. The evaporation conditions are: weigh 0.2g to 0.3g of C 60 In the metal evaporation boat, The rate of evaporation coating is 60 The thickness of the first electron transport layer 51 is 20 nm to 30 nm;

[0203] Forming the second electron transport layer 52: depositing a SnO2 layer as the second electron transport layer 52 on the first electron transport layer 51 by the ALD method, wherein the thickness of the second electron transport layer 52 is 20 nm to 30 nm; wherein the first electron transport layer 51 and the second electron transport layer 52 together constitute the electron transport layer 5;

[0204] Forming a transparent conductive layer 6: depositing an IZO layer as the transparent conductive layer 6 on the second electron transport layer 52 by PVD method, with a thickness of 90 nm;

[0205] Forming electrodes: depositing a first electrode 7 on the transparent conductive layer 6 by metal electrode evaporation equipment, so that the first electrode 7 is in ohmic contact with the transparent conductive layer 6, and depositing a second electrode 8 on the bottom battery 11, so that the second electrode 8 is in ohmic contact with the bottom battery 11. The thickness of the first electrode 7 and the second electrode 8 is 250nm to 300nm.

[0206] Example 3

[0207] This embodiment provides a perovskite cell, as shown in Figure 5, which is a schematic structural diagram of a perovskite cell in Example 3. The perovskite cell is a perovskite / crystalline silicon stacked cell. As shown in Figure 5, the perovskite cell includes: a bottom cell 11 and an electron-hole recombination layer 12, a hole transport layer 21, a self-assembled monolayer 22, a perovskite layer 3, a passivation layer 4, a first electron transport layer 51, a second electron transport layer 52, and a transparent conductive layer 6 sequentially arranged on the bottom cell 11. The perovskite cell also includes a first electrode 7 and a second electrode 8. The first electrode 7 is in ohmic contact with the transparent conductive layer 6, and the second electrode 8 is in ohmic contact with the bottom cell 11.

[0208] The bottom battery 11 is a HJT battery, the electron-hole recombination layer 12 is an ITO layer, and the hole transport layer 21 is a NiO x layer, the self-assembled monolayer 22 is MeO-2PACz, the perovskite layer 3 includes a perovskite material and 1,3-diaminopropane dihydroiodide, the passivation layer 4 is a 1,3-diaminopropane dihydroiodide layer, and the first electron transport layer 51 is C 60 layer, the second electron transport layer 52 is a SnO2 layer, the transparent conductive layer 6 is an IZO layer, and the first electrode 7 and the second electrode 8 are both silver.

[0209] This embodiment also provides a method for preparing the perovskite battery, as shown in Figure 6, which is a flow chart of the preparation process of the perovskite battery in Example 3. As shown in Figure 6, the method for preparing the perovskite battery includes the following steps:

[0210] Providing a substrate: providing a 100 μm HJT cell as a bottom cell 11, and the bottom cell 11 is textured to have a textured surface. The bottom cell 11 is annealed on a hot plate at a temperature of 150° C. for 15 minutes. An electron-hole recombination layer 12 having a thickness of 100 nm to 130 nm is formed on the annealed bottom cell 11.

[0211] Forming the hole transport layer 21: forming the hole transport layer 21 NiO on the electron hole recombination layer 12 by magnetron sputtering x layer, using 99.99% NiO in the magnetron sputtering process x The target is rotated, the process pressure is 0.5Pa to 0.6Pa, the process atmosphere is Ar:O2=500:5 to 700:5, the carrier in the magnetron sputtering equipment reciprocates 10 to 15 times, and the thickness of the hole transport layer 21 is 100nm to 120nm;

[0212] Forming a self-assembled monolayer 22: Weighing 5 mg of MeO-2PACz and dissolving it in anhydrous ethanol to obtain a 1 mg / mL solution, the solution was spin-coated onto the hole transport layer 21 at a rotation speed of 4000 rpm, an acceleration of 2000 rpm, and a spin-coating time of 30 seconds, and annealing at an annealing temperature of 100° C. and an annealing time of 10 minutes to form a self-assembled monolayer 22 having a thickness of a monolayer; wherein the hole transport layer 21 and the self-assembled monolayer 22 together constitute the hole transport layer 2;

[0213] Forming a lead skeleton layer: placing the substrate with the self-assembled monolayer 22 formed thereon into a multi-element co-evaporation device for co-evaporation to form a 320 nm lead skeleton layer on the self-assembled monolayer 22;

[0214] Forming a perovskite layer 3: 1 mg of solid powder of 1,3-diaminopropane dihydroiodide, 0.35 g of FAI, 0.07 g of MABr, and 0.04 g of MACl were weighed respectively, dissolved in 1 mL of anhydrous ethanol, and fully dispersed in a mixer for 24 hours to obtain a perovskite cation solution doped with 1,3-diaminopropane dihydroiodide; 150 μL of the perovskite cation solution was spin-coated on the lead skeleton layer at a speed of 4000 rpm and a spin coating time of 30 seconds, and then annealed at 150° C. for 30 minutes at a relative humidity of 5% to form a perovskite layer 3 with a thickness of 480 nm to 520 nm. The perovskite layer 3 not only forms the perovskite material but also incorporates 1,3-diaminopropane dihydroiodide into the layer;

[0215] Forming a passivation layer 4: At room temperature, dissolve 1 mg to 2 mg of solid powder of 1,3-diaminopropane dihydroiodide in 1 mg to 2 mg of isopropanol solution, and fully disperse in a mixer for 24 hours to obtain a solution containing 1,3-diaminopropane dihydroiodide with a concentration of 1 mg / mL; draw 50 μL to 100 μL of the solution containing 1,3-diaminopropane dihydroiodide and spin-coat it onto the perovskite layer 3 at a speed of 4000 rpm, an acceleration of 4000 rpm / s, a spin coating time of 30 seconds, and an air relative humidity of 5%, and then anneal at 100°C for 20 minutes to form a monolayer passivation layer 4;

[0216] Forming the first electron transport layer 51: The first electron transport layer 51 is deposited on the passivation layer 4 by using a metal electrode evaporation device. The evaporation conditions are: weigh 0.2g to 0.3g of C 60 In the metal evaporation boat, The rate of evaporation coating is 60The thickness of the first electron transport layer 51 is 20 nm to 30 nm; the second electron transport layer 52 is formed: a SnO2 layer is deposited on the first electron transport layer 51 by the ALD method as the second electron transport layer 52, and the thickness of the second electron transport layer 52 is 20 nm to 30 nm; wherein the first electron transport layer 51 and the second electron transport layer 52 together constitute the electron transport layer 5;

[0217] Forming a transparent conductive layer 6: depositing IZO as a transparent conductive layer 6 on the second electron transport layer 52 by PVD method, with a thickness of 110 nm;

[0218] Forming electrodes: depositing a first electrode 7 on the transparent conductive layer 6 by metal electrode evaporation equipment, so that the first electrode 7 is in ohmic contact with the transparent conductive layer 6, and depositing a second electrode 8 on the bottom battery 11, so that the second electrode 8 is in ohmic contact with the bottom battery 11. The thickness of the first electrode 7 and the second electrode 8 is 250nm to 300nm.

[0219] Example 4

[0220] This embodiment provides a perovskite cell, which is a single-junction perovskite cell. The perovskite cell includes: a transparent conductive substrate; and a hole transport layer, a perovskite layer, a passivation layer, an electron transport layer, and a buffer layer sequentially disposed on the transparent conductive substrate. The perovskite cell also includes a first electrode and a second electrode, wherein the first electrode is in ohmic contact with the electron transport layer, and the second electrode is in ohmic contact with the buffer layer.

[0221] Among them, the transparent conductive substrate is ITO layer, and the hole transport layer is NiO x layer, the passivation layer is a monolayer-thick 1,3-diaminopropane dihydroiodide layer, and the electron transport layer is C 60 layer, the first electrode and the second electrode are all silver.

[0222] This embodiment also provides a method for preparing the perovskite battery, which comprises the following steps:

[0223] Providing an ITO layer as a transparent conductive substrate;

[0224] Magnetron sputtering of NiO hole transport layer on transparent conductive substrate x layer, using 99.99% NiO in the magnetron sputtering process x The target is rotated, the process pressure is 0.5Pa~0.6Pa, the process atmosphere is Ar:O2=500:5~700:5, the carrier in the magnetron sputtering equipment reciprocates 10~15 times, and the thickness of the hole transport layer is 23nm;

[0225] The substrate with the hole transport layer formed thereon is placed in a multi-element co-evaporation device for co-evaporation to form a 320nm lead skeleton layer on the hole transport layer;

[0226] 0.35 g of FAI, 0.07 g of MABr, and 0.04 g of MACl were weighed and dissolved in 1 mL of anhydrous ethanol and stirred for 1 h to obtain a perovskite cation solution. 150 μL of the perovskite cation solution was spin-coated onto the lead skeleton layer at a speed of 4000 rpm for 30 s, and then annealed at 150°C for 30 min at a relative humidity of 5% to form a perovskite layer with a thickness of 380 nm.

[0227] At room temperature, 1 mg to 2 mg of 1,3-diaminopropane dihydroiodide solid powder is dissolved in 1 mg to 2 mg of isopropanol solution and fully dispersed in a mixer for 24 hours to obtain a solution containing 1 mg / mL of 1,3-diaminopropane dihydroiodide; 50 μL to 100 μL of the solution containing 1,3-diaminopropane dihydroiodide is spin-coated onto the perovskite layer at a speed of 4000 rpm, an acceleration of 4000 rpm / s, a spin coating time of 30 seconds, and an air relative humidity of 5%, and then annealed at 100°C for 20 minutes to form a monolayer passivation layer;

[0228] The electron transport layer is evaporated on the passivation layer by metal electrode evaporation equipment. The evaporation conditions are as follows: weigh 0.2g to 0.3g of C 60 In the metal evaporation boat, The rate of evaporation coating is 60 The thickness of the electron transport layer is 18 nm;

[0229] A buffer layer is deposited on the electron transport layer by PVD method with a thickness of 20nm to 30nm;

[0230] A first electrode is deposited on the buffer layer using a metal electrode evaporation device to make an ohmic contact between the first electrode and the buffer layer; a second electrode is deposited on the bottom battery to make an ohmic contact between the second electrode and the transparent conductive substrate; the thickness of the first electrode and the second electrode is 250nm to 300nm.

[0231] Example 5

[0232] The only difference between this embodiment and the first embodiment is the concentration of the solution containing 1,3-diaminopropane dihydroiodide when spin-coating the passivation layer. In this embodiment, the concentration of the solution containing 1,3-diaminopropane dihydroiodide is 1.5 mg / mL.

[0233] Example 6

[0234] The only difference between this embodiment and the first embodiment is the concentration of the solution containing 1,3-diaminopropane dihydroiodide when spin-coating the passivation layer. In this embodiment, the concentration of the solution containing 1,3-diaminopropane dihydroiodide is 2.0 mg / mL.

[0235] Comparative Example 1

[0236] Compared with Example 1, the only difference of this comparative example is that the first electron transport layer is formed directly on the perovskite layer after the perovskite layer is formed, that is, no passivation layer is provided in the perovskite cell of this comparative example, and 1,3-diaminopropane dihydroiodide is not doped into the perovskite layer.

[0237] Performance Testing

[0238] Relevant tests were performed on the perovskite cells of Examples 1 to 5 and Comparative Example 1:

[0239] The halm test sorting equipment is used to perform performance tests on open circuit voltage, short circuit current density, fill factor and energy conversion efficiency. The halm machine is a device that simulates sunlight and is equipped with electronic loads, data acquisition and calculation equipment to test the electrical properties of photovoltaic devices (including perovskite cells, such as Eta, Voc, A, FF, Irev2, Jsc, PCE, etc. These parameters are used to reflect the performance of solar cells. The silicon wafer of the solar cell used for the control test is 1.07cm 2 , the calibration light intensity is 1000±50W / m 2 The experimental test results are as follows, where Voc represents the open circuit voltage, Jsc represents the short circuit current density, FF represents the fill factor, and PCE represents the power conversion efficiency. The experimental test results are shown in Table 1.

[0240] Table 1. Electrical performance test data

[0241] According to the above test results in Table 1, the following conclusions can be drawn:

[0242] By comparing Example 1 and Comparative Example 1, it can be seen that in the perovskite cell, after passivation with 1,3-diaminopropane dihydroiodide solution, the open circuit voltage Voc, fill factor FF and energy conversion efficiency PCE are significantly better than those of the unpassivated comparative example 1, indicating that the perovskite layer and C 60 Improve the energy level adaptability between electron transport layers and 60 After anchoring and making it more evenly dispersed in the velvet structure, the performance of the perovskite battery is significantly improved. -It can combine with the I vacancies on the surface of the perovskite layer, so it can effectively improve the filling performance and increase the filling factor.

[0243] By comparing Example 1 with Example 2 and Example 3, it can be seen that Examples 1 and 3 both have a passivation layer made of 1,3-diaminopropane dihydroiodate material, and in Example 2, 1,3-diaminopropane dihydroiodate material is incorporated into the perovskite layer. The experimental results show that the open circuit voltage, short circuit current density and energy conversion efficiency of Example 1 and Example 3 are better than those of Example 2, indicating that the effect of 1,3-diaminopropane dihydroiodate on passivating the interface of the perovskite layer is stronger than affecting the defects in the bulk phase, that is, 1,3-diaminopropane dihydroiodate has a stronger effect on the interface. This is because there are more unreacted metal cations on the upper interface, and the combination of PDAI and the unreacted metal cations on the upper interface can further promote the improvement of Voc. In addition, PDAI and the electron transport layer C 60 Mutual anchoring enhances the interface bonding ability and promotes the improvement of filling factor FF.

[0244] By comparing Example 1 with Example 5 and Example 6, it can be seen that 1.5 mg / mL is the optimal concentration of 1,3-diaminopropane dihydroiodide as an interface passivation material. Under this concentration condition, the open circuit voltage, short circuit current density, and energy conversion efficiency of the solar cell are all at higher levels, especially the energy conversion efficiency, which has reached a high level of 27.52%. When the concentration is reduced to 1 mg / mL or increased to 2 mg / mL, the open circuit voltage, short circuit current density, fill factor and energy conversion efficiency will be affected to varying degrees. When the concentration is less than 1 mg / mL, the concentration is too low and the passivation effect is not obvious. When the concentration is greater than 2 mg / mL, the conductivity of the device will be reduced.

[0245] It should also be noted that Example 4 of the present disclosure is a perovskite single-junction cell, not a perovskite-crystalline silicon tandem cell, and therefore its energy conversion efficiency is not comparable with that of the other examples or Comparative Example 1. However, the perovskite single-junction cell of Example 4 has achieved certain performance improvements over current conventional perovskite single-junction cells.

[0246] The above is a detailed introduction to a perovskite cell and its preparation method, and a photovoltaic module disclosed in the embodiments of the present invention. Specific examples are used herein to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present invention. At the same time, for those skilled in the art, according to the ideas of the present invention, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present invention.

Claims

1. A perovskite battery, characterized in that: The perovskite cell comprises a substrate, and a perovskite layer and an electron transport layer sequentially arranged on the substrate, wherein the electron transport layer comprises C 60 Layer, the C 60 A layer is disposed adjacent to the perovskite layer; The perovskite layer includes a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further includes a 60 A passivation layer between the layers, the passivation layer comprising 1,3-diaminopropane dihydroiodide.

2. The perovskite battery according to claim 1, characterized in that: The electron transport layer comprises a first electron transport layer disposed close to the perovskite layer and a second electron transport layer disposed away from the perovskite layer, wherein the first electron transport layer is 60 layer.

3. The perovskite battery according to claim 2, characterized in that: The thickness of the first electron transport layer is 20 nm to 30 nm.

4. The perovskite battery according to any one of claims 2 to 3, characterized in that: The second electron transport layer is a SnO2 layer.

5. The perovskite battery according to any one of claims 2 to 4, characterized in that: The thickness of the second electron transport layer is 20 nm to 30 nm.

6. The perovskite battery according to any one of claims 1 to 5, characterized in that: The thickness of the perovskite layer is 450nm-550nm.

7. The perovskite battery according to any one of claims 1 to 6, characterized in that: The perovskite cell comprises the passivation layer, and the thickness of the passivation layer is the thickness of a monomolecular layer.

8. The perovskite battery according to any one of claims 1 to 7, characterized in that: The substrate has a suede structure, and the C 60 The layer conforms to the shape of the pile structure of the substrate.

9. The perovskite battery according to any one of claims 1 to 8, characterized in that: The substrate is a transparent conductive substrate, the perovskite cell further comprises a hole transport layer, the hole transport layer is located on the transparent conductive substrate, and the perovskite layer is arranged on the hole transport layer.

10. The perovskite battery according to claim 9, characterized in that: The perovskite cell further includes a first electrode and a second electrode, wherein the first electrode is in ohmic contact with the electron transport layer, and the second electrode is in ohmic contact with the transparent conductive substrate.

11. The perovskite battery according to any one of claims 1 to 8, characterized in that: The substrate includes a bottom battery and an electron-hole recombination layer disposed on the bottom battery.

12. The perovskite cell according to claim 11, characterized in that: The thickness of the electron-hole composite layer is 100nm-180nm.

13. The perovskite battery according to any one of claims 11 to 12, characterized in that: The electron-hole composite layer includes at least one of an indium tin oxide composite layer, an indium zinc oxide composite layer, and an aluminum zinc oxide composite layer.

14. The perovskite battery according to any one of claims 11 to 13, characterized in that: The perovskite cell also includes a transparent conductive layer disposed on a side of the electron transport layer away from the perovskite layer. The perovskite cell also includes a first electrode and a second electrode. The first electrode is in ohmic contact with the transparent conductive layer, and the second electrode is in ohmic contact with the bottom cell.

15. The perovskite cell according to claim 14, characterized in that: The thickness of the transparent conductive layer is 80nm-120nm.

16. The perovskite battery according to any one of claims 14 to 15, characterized in that: The transparent conductive layer is an IZO layer.

17. The perovskite battery according to any one of claims 14 to 16, characterized in that: The first electrode and / or the second electrode is / are made of silver, copper or aluminum.

18. The perovskite battery according to any one of claims 14 to 17, characterized in that: The thickness of the first electrode and / or the second electrode is 250 nm to 300 nm.

19. The perovskite battery according to any one of claims 11 to 18, characterized in that: The perovskite battery further comprises a hole transport layer and a self-assembled monolayer, wherein the hole transport layer is located on the electron-hole composite layer, and the self-assembled monolayer is arranged between the hole transport layer and the perovskite layer.

20. The perovskite cell according to claim 19, characterized in that: The self-assembled monolayer is a MeO-PACz layer.

21. The perovskite battery according to any one of claims 19 to 20, characterized in that: The hole transport layer is a nickel oxide layer.

22. The perovskite battery according to any one of claims 19 to 21, characterized in that: The thickness of the hole transport layer is 100 nm to 150 nm.

23. The perovskite battery according to any one of claims 11 to 22, characterized in that: The bottom cell includes at least one of a HJT silicon cell and a TopCon silicon cell.

24. A method for preparing a perovskite battery, characterized in that: The preparation method comprises the following steps: providing a substrate; forming a perovskite layer doped with 1,3-diaminopropane dihydroiodide and an electron transport layer on the substrate in sequence; and / or, A perovskite layer, a passivation layer and an electron transport layer are sequentially formed on the substrate, wherein the passivation layer comprises 1,3-diaminopropane dihydroiodide.

25. The preparation method according to claim 24, characterized in that: Before forming the perovskite layer, the method further includes the following steps: forming a hole transport layer on the substrate, and forming the perovskite layer on the hole transport layer.

26. The preparation method according to claim 25, characterized in that: Before forming the perovskite layer, the method further comprises the following steps: Providing a bottom battery with a velvet surface, and forming an electron-hole recombination layer on the bottom battery after annealing; Forming the hole transport layer on the electron-hole composite layer by magnetron sputtering; A self-assembled monolayer is spin-coated on the hole transport layer and annealed.

27. The preparation method according to claim 26, characterized in that: In the step of providing a bottom cell with a textured surface, the annealing temperature is 140° C. to 160° C., and the annealing time is 10 min to 20 min.

28. The preparation method according to any one of claims 26 to 27, characterized in that: In the step of forming the hole transport layer by magnetron sputtering, NiO with a content of 99.99% is used. x The target material is rotated, the process pressure is 0.5Pa~0.6Pa, the process atmosphere is Ar:O2=500:5~700:5, and the number of reciprocating motions of the carrier plate in the magnetron sputtering equipment is 10~15 times.

29. The preparation method according to any one of claims 26 to 28, characterized in that: The hole transport layer, the perovskite layer, and the electron transport layer are consistent in shape with the suede surface.

30. The preparation method according to any one of claims 24 to 29, characterized in that: The step of forming the electron transport layer includes: evaporating a first electron transport layer, and depositing a second electron transport layer on the first electron transport layer by an ALD method.

31. The preparation method according to claim 30, characterized in that: In the step of evaporating the first electron transport layer, the evaporation rate is less than 32. The preparation method according to any one of claims 30 to 31, characterized in that: After depositing the second electron transport layer, the method further comprises: Depositing a transparent conductive layer on the second electron transport layer by a PVD method; A first electrode is deposited on the transparent conductive layer to make ohmic contact between the first electrode and the transparent conductive layer; a second electrode is deposited on the bottom battery to make ohmic contact between the second electrode and the bottom battery.

33. The preparation method according to any one of claims 24 to 32, characterized in that: The steps of sequentially forming the perovskite layer, the passivation layer and the electron transport layer include: forming the perovskite layer; Spin coating a solution containing 1,3-diaminopropane dihydroiodide on the perovskite layer by a spin coating method, and obtain a monomolecular layer of 1,3-diaminopropane dihydroiodide as the passivation layer after annealing; The electron transport layer is formed on the passivation layer.

34. The preparation method according to claim 33, characterized in that: The steps of forming the perovskite layer include: a lead skeleton layer prepared by co-evaporation on the hole transport layer; Dissolving FAI, MABr and MACl in a solvent to obtain a perovskite cation solution; The perovskite cation solution is spin-coated on the lead skeleton layer, and the perovskite layer is obtained by annealing.

35. The preparation method according to claim 34, characterized in that: In the step of forming the perovskite layer, The thickness of the lead skeleton layer is 300nm-340nm.

36. The preparation method according to any one of claims 34 to 35, characterized in that: In the step of forming the perovskite layer, the mass ratio of FAI, MABr and MACl is 35:7:

4.

37. The preparation method according to any one of claims 34 to 36, characterized in that: In the step of forming the perovskite layer, the rotation speed of the spin coating is 3500 rpm to 4500 rpm.

38. The preparation method according to any one of claims 34 to 37, characterized in that: In the step of forming the perovskite layer, the spin coating time is 25s to 35s.

39. The preparation method according to any one of claims 34 to 38, characterized in that: In the step of forming the perovskite layer, the annealing temperature is 130°C to 160°C.

40. The preparation method according to any one of claims 34 to 39, characterized in that: In the step of forming the perovskite layer, the annealing time is 25 minutes to 35 minutes.

41. The preparation method according to any one of claims 34 to 40, characterized in that: In the step of forming the perovskite layer, the relative humidity of annealing is 4% to 6%.

42. The preparation method according to any one of claims 34 to 41, characterized in that: The thickness of the formed perovskite layer is 450nm-550nm.

43. The preparation method according to any one of claims 33 to 42, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the concentration of the solution containing 1,3-diaminopropane dihydroiodide is 0.8 mg / mL to 2.0 mg / mL, and the preparation method is to dissolve 1,3-diaminopropane dihydroiodide in isopropanol solution.

44. The preparation method according to any one of claims 33 to 43, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the rotation speed of spin coating is 3500 rpm to 4500 rpm.

45. The preparation method according to any one of claims 33 to 44, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the acceleration of spin coating is 3500 rpm / s to 4500 rpm / s.

46. ​​The preparation method according to any one of claims 33 to 45, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the spin coating time is 20s to 40s.

47. The preparation method according to any one of claims 33 to 46, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the air humidity during spin coating is 4% to 6%.

48. The preparation method according to any one of claims 33 to 47, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the annealing temperature is 95°C to 105°C.

49. The preparation method according to any one of claims 33 to 48, characterized in that: In the step of preparing the passivation layer on the perovskite layer, the annealing time is 15 minutes to 25 minutes.

50. The preparation method according to any one of claims 24 to 32, characterized in that: The steps of sequentially forming the perovskite layer doped with 1,3-diaminopropane dihydroiodide and the electron transport layer include: a lead skeleton layer prepared by co-evaporation on the hole transport layer; Dissolving FAI, MABr, MACl, and 1,3-diaminopropane dihydroiodide in a solvent to obtain a perovskite cation solution; Spin coating the perovskite cation solution on the lead skeleton layer, and annealing to obtain the perovskite layer, so that 1,3-diaminopropane dihydroiodide is doped into the perovskite layer; The electron transport layer is formed on the perovskite layer.

51. A photovoltaic module, characterized in that: The photovoltaic module comprises the perovskite cell according to any one of claims 1 to 23.

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