Layered semiconductor device comprising a thin patterning coating and patterning material for forming the patterning coating

Abstract

A patterning material and a layered semiconductor device comprising a patterning coating comprising the patterning material and a deposited layer. The patterning coating is disposed on an exposed layer surface of an underlying layer in a first portion of a lateral aspect of the layered semiconductor device. The patterning material has a bulk melting point, and is used, in a layer having a film melting point that is greater than the bulk melting point, as the patterning coating. The patterning coating is adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, such that the deposited layer comprising the deposited material is deposited in a second portion of the lateral aspect, while an exposed layer surface of the patterning coating is substantially devoid of a closed coating of the deposited material.

Description

LAYERED SEMICONDUCTOR DEVICE COMPRISING A THIN PATTERNING COATING AND PATTERNING MATERIAL FOR FORMING THE PATTERNING COATINGRELATED APPLICATIONS

[0001] The present application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 594,293 filed October 30, 2023, the contents of which are incorporated herein by reference in their entirety.TECHNICAL FIELD

[0002] The present disclosure relates to layered semiconductor devices, and in some nonlimiting examples, to a patterning coating in a layered opto-electronic device having a plurality of sub-pixel emissive regions, each sub-pixel comprising first and second electrodes separated by a semiconductor layer, in which at least one of the electrodes, at least one particle structure, and a conductive coating electrically coupled thereto, may be formed by at least one conductive deposited material, patterned by depositing such a patterning coating that may at least one of act as, and be, a nucleation inhibiting coating.BACKGROUND

[0003] In an opto-electronic device such as an organic light emitting diode (OLED), at least one semiconducting layer comprising an emissive layer may be disposed between a pair of electrodes, such as an anode and a cathode. The anode and cathode may be electrically coupled with a power source and respectively generate holes and electrons that migrate toward each other through the at least one semiconducting layer. When a pair of holes and electrons combine, electromagnetic (EM) radiation, in the form of a photon, may be emitted by the emissive layer.

[0004] OLED display panels, such as an active-matrix OLED (AMOLED) panel, may comprise a plurality of pixels, each pixel further comprising a plurality of (including without limitation, one of three, and four) sub-pixels. In some non-limiting examples, the various sub-pixels of a pixel may be characterized by one of three, and four, different colors, including without limitation, R(ed), G(reen), and B(lue). Each (sub-) pixel may have an associated emissive region, comprising a stack of an associated pair of electrodes and at least one semiconducting layer between them. In some non-limiting examples, each sub-pixel of a pixel may emit EM radiation, including without limitation, photons, that havean associated wavelength spectrum characterized by a given color, including without limitation, one of, R(ed), G(reen), B(lue), and W(hite). In some non-limiting examples, the (sub-) pixels may be selectively driven by a driving circuit comprising at least one thin-film transistor (TFT) structure electrically coupled with conductive metal lines, in some nonlimiting examples, within a substrate upon which the electrodes and the at least one semiconducting layer are deposited. Various coatings (layers) of such panels may, in some non-limiting examples, be formed by vacuum-based deposition processes.

[0005] In AMOLED panels, EM radiation may be emitted by a sub-pixel when a voltage is applied across an anode and a cathode of the sub-pixel. By controlling the voltage applied across the anode and the cathode, it may be possible to control the emission of EM radiation from each sub-pixel of such panel. In cases where a common cathode is provided across multiple sub-pixels, the voltage across the anode and the cathode in each sub-pixel may be controlled by modulating the voltage of the anode. In some non-limiting examples, the adjacent anodes may be spaced apart in a lateral aspect, and at least one non-emissive region may be provided therebetween.

[0006] In some non-limiting examples, there may be an aim to provide a deposited layer, whether as at least one of a: closed conductive coating, and thin disperse layer of at least one particle structure(s), in a pattern for each (sub-) pixel of the panel across at least one of a: cross-sectional, and lateral, aspect thereof, by selective deposition of a conductive deposited material to form a device feature, such as, without limitation, at least one of: an electrode, a conductive element electrically coupled therewith, and an EM-radiation absorbing layer, during the OLED manufacturing process.

[0007] One method for doing so, in some non-limiting examples, involves the interposition of a fine metal mask (FMM) during deposition of the conductive deposited material. However, in some non-limiting examples, such material may have substantially high evaporation temperatures, which may impact at least one of: the ability to re-use the FMM, and the accuracy of the pattern that may be achieved, with attendant increases in cost, effort, and complexity.

[0008] One method for doing so, in some non-limiting examples, involves depositing the conductive deposited material and thereafter removing, including by a laser drilling process, unwanted regions thereof to form the pattern. However, the removal process often involves the creation / presence of debris, which may affect the yield of the manufacturing process.

[0009] In some non-limiting examples, such methods may have reduced applicability in certain applications. In some non-limiting examples, such methods may have reduced applicability with devices having certain topographical features.

[0010] In some non-limiting applications, there may be an aim to provide an improved mechanism for providing selective deposition of a conductive deposited material.BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Examples of the present disclosure will now be described by reference to the following figures, in which identical reference numerals in different figures indicate at least one of: identical, and in some non-limiting examples, at least one of: analogous, and corresponding elements, and in which:

[0012] FIG. 1 is a simplified block diagram from a longitudinal aspect, of an example device having a plurality of layers in a lateral aspect, formed by selective deposition of a patterning coating in a first portion of the lateral aspect, followed by deposition of a closed coating of deposited material in a second portion thereof, according to an example in the present disclosure;

[0013] FIG. 2 is a simplified diagram, from a longitudinal aspect, of an example version of the device of FIG. 1, in which the closed coating of deposited material in the second portion forms a second electrode of an opto-electronic device, according to an example in the present disclosure;

[0014] FIG. 3 is a schematic diagram illustrating an example cross-sectional view of an example display panel having a plurality of layers, comprising at least one aperture therewithin, through which at least one electromagnetic signal may be exchanged according to an example in the present disclosure;

[0015] FIG. 4 is a schematic diagram showing an example process for depositing a patterning coating in a pattern on an exposed layer surface of an underlying layer in an example version of the device of FIG. 1, according to an example in the present disclosure;

[0016] FIG. 5 is a schematic diagram showing an example process for depositing a deposited material in the second portion on an exposed layer surface that comprises the deposited pattern of the patterning coating of FIG. 4, where the patterning coating is a nucleation-inhibiting coating (NIC);

[0017] FIG. 6A is a schematic diagram illustrating an example version of the device of FIG. 1 in a cross-sectional view;

[0018] FIG. 6B is a schematic diagram illustrating the device of FIG. 6A in a complementary plan view;

[0019] FIGs. 7A-7B are schematic diagrams that show various potential behaviours of a patterning coating at a deposition interface with a deposited layer in an example version of the device of FIG. 1 according to various examples in the present disclosure;

[0020] FIGs. 8A-8H are simplified block diagrams from a cross-sectional aspect, of example versions of the device of FIG. 1, showing various examples of possible interactions between the particle structure patterning coating and the particle structures according to examples in the present disclosure;

[0021] FIG. 9 is a schematic diagram illustrating an example cross-sectional view of an example version of the device of FIG. 2 with additional example deposition steps according to an example in the present disclosure;

[0022] FIG. 10 is a schematic diagram that may show example stages of an example process for manufacturing an example version of an OLED device having sub-pixel regions having a second electrode of different thickness according to an example in the present disclosure;

[0023] FIG. 11 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device in which a second electrode is coupled with an auxiliary electrode according to an example in the present disclosure;

[0024] FIG. 12 is a schematic diagram illustrating an example cross-sectional view of an example version of an OLED device having a partition and a sheltered region, such as a recess, in a non-emissive region thereof according to an example in the present disclosure;

[0025] FIGs. 13A-13B are schematic diagrams that show example cross-sectional views of an example OLED device having a partition and a sheltered region, such as an aperture, in a non-emissive region, according to various examples in the present disclosure;

[0026] FIG. 14 is an example energy profile illustrating energy states of an adatom absorbed onto a surface according to an example in the present disclosure;

[0027] FIG. 15 is a schematic diagram illustrating the formation of a film nucleus according to an example in the present disclosure; and

[0028] FIG. 16 is a block diagram of an example computer device within a computing and communications environment that may be used for implementing devices and methods in accordance with representative examples of the present disclosure.

[0029] In the present disclosure, a reference numeral having at least one of: at least one numeric value (including without limitation, in at least one of: superscript, and subscript), and at least one alphabetic character (including without limitation, in lower-case) appended thereto, may be considered to refer to at least one of: a particular instance, and subset thereof, of the feature (element) described by the reference numeral. Reference to the reference numeral without reference to the at least one of: the appended value(s), and the character(s), may, as the context dictates, refer generally to the feature(s) described by at least one of: the reference numeral, and the set of all instances described thereby. Similarly, a reference numeral may have the letter “x” in the place of a numeric digit. Reference to such reference numeral may, as the context dictates, refer generally to feature(s) described by the reference numeral, where the character “x” is replaced by at least one of: a numeric digit, and the set of all instances described thereby.

[0030] In the present disclosure, for purposes of explanation and not limitation, specific details are set forth to provide a thorough understanding of the present disclosure, including without limitation, particular architectures, interfaces and techniques. In some instances, detailed descriptions of well-known systems, technologies, components, devices, circuits, methods, and applications are omitted to not obscure the description of the present disclosure with unnecessary detail.

[0031] Further, it will be appreciated that block diagrams reproduced herein can represent conceptual views of illustrative components embodying the principles of the technology.

[0032] Accordingly, the system and method components have been represented where appropriate by conventional symbols in the drawings, showing only those specific details that are pertinent to understanding the examples of the present disclosure, to not obscure the disclosure with details that will be readily apparent to those of ordinary skill in the art having the benefit of the description herein.

[0033] Any drawings provided herein may not be drawn to scale and may not be considered to limit the present disclosure in any way.

[0034] Any feature shown in dashed outline may in some examples be considered as optional.SUMMARY

[0035] It is an object of the present disclosure to obviate or mitigate at least one disadvantage of the prior art.

[0036] The present disclosure discloses a patterning material and a layered semiconductor device comprising a patterning coating comprising the patterning material and a deposited layer. The patterning coating may be disposed on an exposed layer surface of an underlying layer in a first portion of a lateral aspect of the layered semiconductor device. The patterning material may have a bulk melting point, and may be used, in a layer having a film melting point that is greater than the bulk melting point, as the patterning coating. The patterning coating may be adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, such that the deposited layer comprising the deposited material may be deposited in a second portion of the lateral aspect, while an exposed layer surface of the patterning coating may be substantially devoid of a closed coating of the deposited material.

[0037] According to a broad aspect, there is disclosed a layered semiconductor device comprising a plurality of layers deposited on a substrate and extending in a lateral aspect defined by a lateral axis thereof, comprising: a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, and disposed on an exposed layer surface of an underlying layer of the device, in a first portion of the lateral aspect, the patterning coating comprising a patterning material having a bulk melting point; and a deposited layer disposed in a second portion of the lateral aspect, the deposited layer comprising the deposited material; wherein: an exposed layer surface of the patterning coating is substantially devoid of a closed coating of the deposited material, and the patterning coating has a film melting point that is greater than the bulk melting point.

[0038] In some non-limiting examples, a thickness of the patterning coating may be no more than a threshold thickness, above which the film melting point of the patterningcoating may be substantially the same as the bulking melting point of the patterning material.

[0039] In some non-limiting examples, the thickness of the patterning coating may be an average layer thickness thereof.

[0040] In some non-limiting examples, the threshold thickness of the patterning coating may be one of at least about: 5, 6, 7, 8, 9, and 10, monolayers.

[0041] In some non-limiting examples, the thickness of the patterning coating may be one of between about: 1-5, 1-4, 1-3, and 1-2, monolayers.

[0042] In some non-limiting examples, the thickness of the patterning coating may be one of between about: 2-8, 2-7, 2-6, 3-6, and 3-5, nm.

[0043] In some non-limiting examples, a difference between the film melting point and the bulk melting point may be one of at least about: 5°C, 8°C, 10°C, 12°C, 15°C, 18°C, 20°C, 25°C, and 30°C.

[0044] In some non-limiting examples, the film melting point of the patterning coating may be one of at least about: 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 120°C, and 130°C.

[0045] In some non-limiting examples, the bulk melting point of the patterning material may be one of no more than about: 100°C, 95°C, 90°C, 85°C, 80°C, 75°C, and 70°C.

[0046] In some non-limiting examples, the patterning material may comprise a polymeric material.

[0047] In some non-limiting examples, the patterning material may comprise an oligomeric material.

[0048] In some non-limiting examples, a molecule of the patterning material may have a molecular size of one of at least about: 4, 5, 6, 8, 10, 12, 15, and 18, angstroms.

[0049] In some non-limiting examples, a majority of molecules of the patterning material in the patterning coating may align in an ordered orientation.

[0050] In some non-limiting examples, a molecule of the patterning material may comprise a first moiety and a second moiety, and the majority of molecules of the patterning material may be oriented such that one of the first, and second, moieties, may be oriented toward an exposed layer surface of the patterning coating.

[0051] In some non-limiting examples, the first moiety of the molecule may have a critical surface tension that is at least that of a critical surface tension of the second moiety thereof and coupled thereto, such that the first moiety may comprise a high(er) critical surface tension component and the second moiety may comprise a low(er) critical surface tension component.

[0052] In some non-limiting examples, a majority of the second moi eties of the patterning material may be oriented toward an exposed layer surface of the patterning coating, such that the exposed layer surface of the patterning coating may present a low(er) surface energy surface to the deposited material.

[0053] In some non-limiting examples, the underlying layer may be an orientation layer that comprises an orientation material.

[0054] In some non-limiting examples, the orientation material may have a substantially high characteristic surface energy, and a majority of the first moi eties of the patterning material may be oriented toward an exposed layer surface of the orientation layer.

[0055] In some non-limiting examples, at least one of the orientation layer, and the orientation material may have a surface energy of one of at least about: 30, 35, 50, 60, 70, 80, 100, 200, and 500, dynes / cm.

[0056] In some non-limiting examples, the orientation material may comprise at least one of a metal, a metallic material, a non-metallic material, a semiconducting material, an insulating material, an organic material, and an inorganic material.

[0057] In some non-limiting examples, the device may further comprise an emissive region comprising: a first electrode, a second electrode, and at least one semiconducting layer disposed between the first electrode and the second electrode; wherein the first electrode is disposed between the substrate and the at least one semiconducting layer.

[0058] In some non-limiting examples, the first portion may exclude a lateral aspect of the emissive region.

[0059] In some non-limiting examples, the first portion may comprise a transmissive region configured to allow light to pass therethrough.

[0060] In some non-limiting examples, the second electrode may comprise at least a part of the deposited layer as a layer thereof.

[0061] In some non-limiting examples, the first portion may include a lateral aspect of the emissive region.

[0062] In some non-limiting examples, the device may further comprise an auxiliary electrode comprising the deposited layer as a layer thereof.

[0063] In some non-limiting examples, the device may further comprise at least one island comprising the deposited material disposed on the exposed layer surface of the patterning coating in the first portion of the lateral aspect.

[0064] According to a broad aspect, there is disclosed a patterning material having a bulk melting point, for use, in a layer having a film melting point that may be greater than the bulk melting point, as a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, the patterning coating for disposition on an exposed layer surface of an underlying layer in a first portion of a lateral aspect of a layered semiconductor device, such that a deposited layer comprising the deposited material may be deposited in a second portion of the lateral aspect, while an exposed layer surface of the patterning coating may be substantially devoid of a closed coating of the deposited material.

[0065] In some non-limiting examples, a thickness of the patterning coating may be no more than a threshold thickness, above which the film melting point of the patterning coating may be substantially the same as the bulking melting point of the patterning material.

[0066] In some non-limiting examples, the thickness of the patterning coating may be an average layer thickness thereof.

[0067] In some non-limiting examples, the threshold thickness of the patterning coating may be one of at least about: 5, 6, 7, 8, 9, and 10, monolayers.

[0068] In some non-limiting examples, the thickness of the patterning coating may be one of between about: 1-5, 1-4, 1-3, and 1-2, monolayers.

[0069] In some non-limiting examples, the thickness of the patterning coating may be one of between about: 2-8, 2-7, 2-6, 3-6, and 3-5, nm.

[0070] In some non-limiting examples, a difference between the film melting point and the bulk melting point may be one of at least about: 5°C, 8°C, 10°C, 12°C, 15°C, 18°C, 20°C, 25°C, and 30°C.

[0071] In some non-limiting examples, the film melting point of the patterning coating may be one of at least about: 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 120°C, and 130°C.

[0072] In some non-limiting examples, the bulk melting point of the patterning material may be one of no more than about: 100°C, 95°C, 90°C, 85°C, 80°C, 75°C, and 70°C.

[0073] In some non-limiting examples, the patterning material may comprise a polymeric material.

[0074] In some non-limiting examples, the patterning material may comprise an oligomeric material.

[0075] In some non-limiting examples, a molecule of the patterning material may have a molecular size of one of at least about: 4, 5, 6, 8, 10, 12, 15, and 18, angstroms.

[0076] In some non-limiting examples, the patterning material may comprise a phosphazene group.

[0077] In some non-limiting examples, the patterning material may comprise a cyclophosphazene group.

[0078] In some non-limiting examples, the patterning material may comprise at least one of a: F-containing, and Si-containing, group.

[0079] In some non-limiting examples, the patterning material may comprise a siloxane group.

[0080] In some non-limiting examples, a majority of molecules of the patterning material in the patterning coating may align in an ordered orientation.

[0081] In some non-limiting examples, a molecule of the patterning material may comprise a first moiety and a second moiety, and the majority of molecules of the patterning material may be oriented such that one of the first, and second, moieties, may be oriented toward an exposed layer surface of the patterning coating.

[0082] In some non-limiting examples, the first moiety of the molecule may have a critical surface tension that is at least that of a critical surface tension of the second moiety thereofand coupled thereto, such that the first moiety comprises a high(er) critical surface tension component and the second moiety may comprise a low(er) critical surface tension component.

[0083] In some non-limiting examples, a majority of the second moi eties of the patterning material may be oriented toward an exposed layer surface of the patterning coating, such that the exposed layer surface of the patterning coating may present a low(er) surface energy surface to the deposited material.

[0084] In some non-limiting examples, at least one island comprising the deposited material may be disposed on the exposed layer surface of the patterning coating in the first portion of the lateral aspect.DESCRIPTIONLayered Device

[0085] The present disclosure relates generally to layered semiconductor devices 100, and more specifically, to opto-electronic devices 200. An opto-electronic device 200 may generally encompass any device 100 that converts electrical signals into EM radiation in the form of photons and vice versa. In some non-limiting examples, an opto-electronic device 200 may comprise an organic light-emitting diode (OLED).

[0086] Those having ordinary skill in the relevant art will appreciate that, while the present disclosure is directed to opto-electronic devices 200, the principles thereof may, in some non-limiting examples, be applicable to any panel having a plurality of layers, including without limitation, at least one layer of conductive deposited material 531, including as a thin film, and in some non-limiting examples, through which electromagnetic (EM) signals may pass, including without limitation, one of partially, and entirely, at a non-zero angle relative to a plane of at least one of the layers.

[0087] Turning now to FIG. 1, there may be shown a cross-sectional view of an example layered semiconductor device 100. In some non-limiting examples, as shown in greater detail in FIG. 2, the device 100 may comprise a plurality of layers deposited upon a substrate 10.

[0088] A first lateral axis, identified as the X-axis, may be shown, together with a longitudinal axis, identified as the Z-axis. A second lateral axis, identified as the Y-axis, may be shown as being substantially transverse to both the X-axis and the Z-axis. At leastone of the lateral axes may define a lateral aspect of the device 100. The longitudinal axis may define a longitudinal aspect of the device 100.

[0089] The layers of the device 100 may extend, in the lateral aspect, substantially parallel to a plane defined by the lateral axes. Those having ordinary skill in the relevant art will appreciate that the substantially planar representation shown in FIG. 1 may be, in some non-limiting examples, an abstraction for purposes of illustration. In some non-limiting examples, there may be, across a lateral extent of the device 100, localized, substantially planar, strata of different thicknesses and dimension, including, in some non-limiting examples, the substantially complete absence of at least one layer separated by non-planar transition areas (including lateral gaps and even discontinuities).

[0090] Thus, while for illustrative purposes, the device 100 may be shown in its longitudinal aspect as a substantially stratified structure of substantially parallel planar layers, such device 100 may illustrate locally, a diverse topography to define features, each of which may substantially exhibit the stratified profile discussed in the longitudinal aspect.

[0091] In some non-limiting examples, a lateral aspect of an exposed layer surface 11 of the device 100 may comprise a first portion 101 and a second portion 102. In some nonlimiting examples, the second portion 102 may comprise that part of the exposed layer surface 11 of the device 100 that lies beyond the first portion 101.

[0092] As shown in FIG. 1, the layers of the device 100 may comprise a substrate 10, and a patterning coating 110 disposed on an exposed layer surface 11 of at least a portion of the lateral aspect thereof. In some non-limiting examples, the patterning coating 110 may be limited in its lateral extent to the first portion 101 and a deposited layer 130 may be disposed as a closed coating 140 on an exposed layer surface 11 of the device 100 in a second portion 102 of its lateral aspect.

[0093] In some non-limiting examples, at least one particle structure 150 may be disposed as a discontinuous layer 160 on the exposed layer surface 11 of the patterning coating 110. In some non-limiting examples, although not shown, at least one of: the patterning coating 110, the deposited layer 130, and at least one particle structure 150, may be deposited on a layer (underlying layer 710 (FIG. 7 A)) other than the substrate 10 including without limitation, an intervening layer between the substrate 10 and at least one of: the patterning coating 110, deposited layer 130, and the at least one particle structure 150. In some non-limiting examples, the underlying layer 710 may comprise at least one of: an orientation layer, and an organic supporting layer.

[0094] In some non-limiting examples, at least one of: the patterning coating 110, the deposited layer 130, and the at least one particle structure 150, may be covered by at least one overlying layer 170.

[0095] In some non-limiting examples, such overlying layer 170 may comprise at least one of: an encapsulation layer, including without limitation, at least one of: a glass cap, a barrier film, a barrier adhesive, a barrier coating, an encapsulation layer, and a thin film encapsulation (TFE) layer, provided to encapsulate the device 100, and an optical coating, including without limitation, at least one of: an optical, and structural, coating, and at least one component thereof, including without limitation, a polarizer, a color filter, an antireflection coating, an anti-glare coating, cover glass, and an optically clear adhesive (OCA).

[0096] In some non-limiting examples, at least one of a: substantially thin patterning coating 110 in the first portion 101, and deposited layer 130 in the second portion 102, may provide a substantially planar surface on which the overlying layer 170 may be deposited. In some non-limiting examples, providing such a substantially planar surface for application of such overlying layer 170 may increase adhesion thereof to such surface.

[0097] In some non-limiting examples, the optical coating may be used to modulate optical properties of EM radiation being at least one of: transmitted, emitted, and absorbed, by the device 100, including without limitation, plasmon modes. In some non-limiting examples, the optical coating may be used as at least one of: an optical filter, index-matching coating, optical outcoupling coating, scattering layer, diffraction grating, and parts thereof.

[0098] In some non-limiting examples, the optical coating may be used to modulate at least one optical microcavity effect in the device 100 by, without limitation, tuning at least one of the: total optical path length, and refractive index thereof. At least one optical property of the device 100 may be affected by modulating at least one optical microcavity effect including without limitation, the output EM radiation, including without limitation, at least one of: an angular dependence of an intensity thereof, and a wavelength shift thereof. In some non-limiting examples, the optical coating may be a non-electrical component, that is, the optical coating may not be configured to at least one of: conduct, and transmit, electrical current during normal device operations.

[0099] In some non-limiting examples, the optical coating may be formed of any deposited material 531, and in some non-limiting examples, may employ any mechanism of depositing a deposited layer 130 as described herein.Opto-Electronic Device

[0100] FIG. 2 is a simplified block diagram from a longitudinal aspect, of an example opto-electronic device 200, which may be, in some non-limiting examples, an electroluminescent device 200, according to the present disclosure. In some non-limiting examples, the device 200 may be an OLED.

[0101] The device 200 may comprise a substrate 10, upon which a frontplane 201, comprising a plurality of layers, respectively, a first electrode 220, at least one semiconducting layer 230, and a second electrode 240, may be disposed. In some nonlimiting examples, the frontplane 201 may provide mechanisms for at least one of: emission of EM radiation, including without limitation, photons, and manipulation of emitted EM radiation.

[0102] In some non-limiting examples, various coatings of such devices 200 may be formed by vacuum-based deposition processes.

[0103] In some non-limiting examples, the second electrode 240 may extend partially over the patterning coating 110 in a transition region 245.

[0104] In some non-limiting examples, although not shown, at least one particle structure 150d of a discontinuous layer 160 of a material of which the deposited layer 130 may be comprised (deposited material 531 (FIG. 5)) may extend partially over the patterning coating 110, which may act as a particle structure patterning coating 110pin the transition region 245. In some non-limiting examples, such discontinuous layer 160 may form at least a part of the second electrode 240.

[0105] In some non-limiting examples, the device 200 may be electrically coupled with a power source 204. When so coupled, the device 200 may emit EM radiation, including without limitation, photons, as described herein.Substrate

[0106] In some non-limiting examples, the substrate 10 may comprise a base substrate 215. In some non-limiting examples, the base substrate 215 may be formed ofmaterial suitable for use thereof, including without limitation, at least one of: an inorganic material, including without limitation, at least one of: Si, glass, metal (including without limitation, a metal foil), sapphire, and other inorganic material, and an organic material, including without limitation, a polymer, including without limitation, at least one of: a polyimide, and an Si-based polymer. In some non-limiting examples, the base substrate 215 may be one of: rigid, and flexible. In some non-limiting examples, the substrate 10 may be defined by at least one planar surface. In some non-limiting examples, the substrate 10 may have at least one exposed layer surface 11 that supports the remaining frontplane 201 components of the device 200, including without limitation, at least one of: the first electrode 220, the at least one semiconducting layer 230, and the second electrode 240.

[0107] In some non-limiting examples, such surface may be at least one of an: organic, and inorganic, surface.

[0108] In some non-limiting examples, the substrate 10 may comprise, in addition to the base substrate 215, at least one additional at least one of: organic, and inorganic, layer (not shown nor specifically described herein) supported on an exposed layer surface 11 of the base substrate 215.

[0109] In some non-limiting examples, such additional layers may comprise, at least one organic layer, which may at least one of: comprise, replace, and supplement, at least one of the semiconducting layers 230.

[0110] In some non-limiting examples, such additional layers may comprise at least one inorganic layer, which may comprise, at least one electrode, which in some nonlimiting examples, may at least one of: comprise, replace, and supplement, at least one of: the first electrode 220, and the second electrode 240.Backplane and TFT structure(s) embodied therein

[0111] In some non-limiting examples, such additional layers may comprise a backplane 202. In some non-limiting examples, the backplane 202 may comprise at least one of: power circuitry, and switching elements, for driving the device 200, including without limitation, at least one of: at least one electronic TFT structure 206, and at least one component thereof, that may be formed by a photolithography process.

[0112] In some non-limiting examples, the backplane 202 of the substrate 10 may comprise at least one electronic, including without limitation, an opto-electronic,component, including without limitation, one of: transistors, resistors, and capacitors, such as which may support the device 200 acting as one of: an active-matrix, and a passive matrix, device 200. In some non-limiting examples, such structures may be a thin-film transistor (TFT) structure 206, including without limitation, one of a: top-gate, bottom-gate, n-type, and p-type, TFT structure 206. In some non-limiting examples, the TFT structure 206 may incorporate one of: amorphous Si (a-Si), indium gallium zinc oxide (IGZO), and low-temperature polycrystalline Si (LTPS).First Electrode

[0113] The first electrode 220 may be deposited over the substrate 10. In some nonlimiting examples, the first electrode 220 may be electrically coupled with at least one of: a terminal of the power source 204, and ground. In some non-limiting examples, the first electrode 220 may be so coupled through at least one driving circuit which in some nonlimiting examples, may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0114] In some non-limiting examples, the first electrode 220 may comprise one of: an anode, and cathode. In some non-limiting examples, the first electrode 220 may be an anode.

[0115] In some non-limiting examples, the first electrode 220 may be formed by depositing at least one thin conductive film, over (a part of) the substrate 10. In some nonlimiting examples, there may be a plurality of first electrodes 220, disposed in a spatial arrangement over a lateral aspect of the substrate 10. In some non-limiting examples, at least one of such at least one first electrodes 220 may be deposited over (a part of) a TFT insulating layer 207 disposed in a lateral aspect in a spatial arrangement. If so, in some non-limiting examples, at least one of such at least one first electrodes 220 may extend through an opening of the corresponding TFT insulating layer 207 to be electrically coupled with an electrode of the TFT structures 206 in the backplane 202.

[0116] In some non-limiting examples, at least one of: the at least one first electrode 220, and at least one thin film thereof, may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: magnesium (Mg), aluminum (Al), calcium (Ca), zinc (Zn), silver (Ag), cadmium (Cd), barium (Ba), and ytterbium (Yb), including without limitation, alloys comprising any ofsuch materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, in varying proportions, including without limitation, combinations of any plurality thereof in at least one layer, any at least one of which may be, without limitation, a thin film.Second Electrode

[0117] The second electrode 240 may be deposited over the at least one semiconducting layer 230. In some non-limiting examples, the second electrode 240 may be electrically coupled with at least one of: a terminal of the power source, and ground. In some non-limiting examples, the second electrode 240 may be so coupled through at least one driving circuit, which in some non-limiting examples, may incorporate at least one TFT structure 206 in the backplane 202 of the substrate 10.

[0118] In some non-limiting examples, the second electrode 240 may comprise one of: an anode, and a cathode. In some non-limiting examples, the second electrode 240 may be a cathode.

[0119] In some non-limiting examples, the second electrode 240 may be formed by depositing a deposited layer 130, in some non-limiting examples, as at least one thin film, over (a part of) the at least one semiconducting layer 230.

[0120] In some non-limiting examples, the deposited layer 130 may be deposited in a second portion 102, by exposing the exposed layer surface 11 of the device 200, which may, in some non-limiting examples, comprise the at least one semiconducting layer 230, to a vapor flux 412 (FIG. 4) of a patterning material 411 (FIG. 4), including without limitation, using a shadow mask 415 (FIG. 4), to form a patterning coating 110 in the first portion 101. Whether a shadow mask 415 is employed, in some non-limiting examples, as shown in FIG. 2, the patterning material 110 may be restricted, in its lateral aspect, substantially to an emissive region 210 to a non-emissive region 211, including without limitation, at least one transmissive region 212 located therein.

[0121] In some non-limiting examples, there may be a plurality of second electrodes 240, disposed in a spatial arrangement over a lateral aspect of the at least one semiconducting layer 230.

[0122] In some non-limiting examples, the at least one second electrode 240 may comprise various materials, including without limitation, at least one metallic material, including without limitation, at least one of: Mg, Al, Ca, Zn, Ag, Cd, Ba, and Yb, including without limitation, alloys comprising at least one of: any of such materials, at least one metal oxide, including without limitation, a TCO, including without limitation, ternary compositions such as, without limitation, at least one of: FTO, IZO, and ITO, including without limitation, in varying proportions, zinc oxide (ZnO), and other oxides comprising at least one of: In, and Zn, in at least one layer, and at least one non-metallic material, any of which may be, without limitation, a thin conductive film. In some non-limiting examples, for a Mg: Ag alloy, such alloy composition may range between about 1 :9-9: 1 by volume.

[0123] In some non-limiting examples, the deposition of the second electrode 240 may be performed using one of: an open mask, and a mask-free, deposition process.

[0124] In some non-limiting examples, the second electrode 240 may comprise a plurality of such coatings. In some non-limiting examples, such coatings may be distinct coatings disposed on top of one another.

[0125] In some non-limiting examples, the second electrode 240 may comprise a Yb / Ag bi-layer coating. In some non-limiting examples, such bi-layer coating may be formed by depositing a Yb coating, followed by an Ag coating. In some non-limiting examples, a thickness of such Ag coating may be at least that of a thickness of the Yb coating.

[0126] In some non-limiting examples, the second electrode 240 may be a multicoating electrode 240 comprising a plurality of one of: a metallic, and an oxide, coating.

[0127] In some non-limiting examples, the second electrode 240 may comprise a fullerene and Mg.

[0128] In some non-limiting examples, such coating may be formed by depositing a fullerene coating followed by an Mg coating. In some non-limiting examples, a fullerene may be dispersed within the Mg coating to form a fullerene-containing Mg alloy coating. Non-limiting examples of such coatings are described in at least one of: United States Patent Application Publication No. 2015 / 0287846 published 8 October 2015, and in PCT International Application No. PCT / IB2017 / 054970 filed 15 August 2017 and published as W02018 / 033860 on 22 February 2018.Semiconducting layer

[0129] In some non-limiting examples, the at least one semiconducting layer 230 may comprise a plurality of layers 231, 233, 235, 237, 239, any of which may be disposed, in some non-limiting examples, in a thin film, in a stacked configuration, which may include, without limitation, at least one of: a hole injection layer (HIL) 231, a hole transport layer (HTL) 233, an emissive layer (EML) 235, an electron transport layer (ETL) 237, and an electron injection layer (EIL) 239.

[0130] In some non-limiting examples, the at least one semiconducting layer 230 may form a “tandem” structure comprising a plurality of EMLs 235. In some non-limiting examples, such tandem structure may also comprise at least one charge generation layer (CGL) (not shown).

[0131] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 200 may be varied by one of: omitting, and combining, at least one of the semiconductor layers 231, 233, 235, 237, 239.

[0132] In some non-limiting examples, any of the layers 231, 233, 235, 237, 239 of the at least one semiconducting layer 230 may comprise any number of sub-layers. In some non-limiting examples, any of such layers 231, 233, 235, 237, 239, including without limitation, sub-layer(s) thereof, may comprise various ones of a: mixture, and composition gradient. In some non-limiting examples, although not shown, the device 200 may comprise at least one layer comprising one of an: inorganic, and organometallic, material, and may not be necessarily limited to devices 200 comprised solely of organic materials. In some non-limiting examples, the device 200 may comprise at least one quantum dot (QD).

[0133] In some non-limiting examples, the HIL 231 may be formed using a hole injection material, which may, in some non-limiting examples, facilitate injection of holes by the anode.

[0134] In some non-limiting examples, the HTL 233 may be formed using a hole transport material, which may, in some non-limiting examples, exhibit high hole mobility.

[0135] In some non-limiting examples, the ETL 237 may be formed using an electron transport material, which may, in some non-limiting examples, exhibit high electron mobility.

[0136] In some non-limiting examples, the EIL 239 may be formed using an electron injection material, which may, in some non-limiting examples, facilitate injection of electrons by the cathode.

[0137] In some non-limiting examples, the at least one EML 235 may be formed, in some non-limiting examples, by doping a host material with at least one emitter material. In some non-limiting examples, the emitter material may be at least one of a: fluorescent, phosphorescent, and thermally activated delayed fluorescence (TADF), emitter material.

[0138] In some non-limiting examples, the emitter material may be one of a: R(ed), G(reen), and B(lue), emitter material, that is, an emitter material that facilitates the emission of, respectively, R(ed), G(reen), and B(lue), EM radiation.

[0139] In some non-limiting examples, the device 200 may be an OLED in which the at least one semiconducting layer 230 may comprise at least one EML 235 interposed between conductive thin film electrodes 220, 240, whereby, when a potential difference is applied across them, holes may be injected into the at least one semiconducting layer 230 through the anode, and electrons may be injected into the at least one semiconducting layer 230 through the cathode, to migrate toward the at least one EML 235 and combine to emit EM radiation in the form of photons.

[0140] In some non-limiting examples, the device 200 may be an electroluminescent QD device 200 in which the at least one semiconducting layer 230 may comprise an active layer comprising at least one QD. When current is provided by the power source 204 to the first electrode 220 and second electrode 240, EM radiation, including without limitation, in the form of photons, may be emitted from the active layer comprising the at least one semiconducting layer 230 between them.

[0141] In some non-limiting examples, including where the device 200 comprises a lighting panel, an entire lateral aspect of the device 200 may correspond to a single emissive element. As such, the substantially planar cross-sectional profile shown in FIG. 2 may extend substantially along the entire lateral aspect of the device 200, such that EM radiation is emitted from the device 200 substantially along the entirety of the lateral extent thereof. In some non-limiting examples, such single emissive element may be driven by a single driving circuit of the device 200.

[0142] In some non-limiting examples, including where the device 200 comprises a display module, the lateral aspect of the device 200 may be sub-divided into a plurality of emissive regions 210 of the device 200, in which the longitudinal aspect of the structure thereof, within each of the emissive region(s) 210, may cause EM radiation to be emitted therefrom when energized.

[0143] Those having ordinary skill in the relevant art will readily appreciate that the structure of the device 200 may be varied by the introduction of at least one additional layer (not shown) at appropriate position(s) within the at least one semiconducting layer 230 stack, including without limitation, at least one of: a hole blocking layer (HBL) (not shown), an electron blocking layer (EBL) (not shown), a charge transport layer (CTL) (not shown), and a charge injection layer (CIL) (not shown).

[0144] In some non-limiting examples, the patterning coating 110 may be formed concurrently with the at least one semiconducting layer(s) 230. In some non-limiting examples, at least one material used to form the patterning coating 110 may also be used to form the at least one semiconducting layer(s) 230. In some non-limiting examples, the ETL 237 of the at least one semiconducting layer 230 may be a patterning coating 110 that may be deposited in the first portion 101 and the second portion 102 during the deposition of the at least one semiconducting layer 230. The EIL 239 may then be selectively deposited in the emissive region 210 of the second portion 102 over the ETL 237, such that the exposed layer surface 11 of the ETL 237 in the first portion 101 may be substantially devoid of the EIL 239. The exposed layer surface 11 of the EIL 239 in the emissive region 210 and the exposed layer surface of the ETL 237, which acts as the patterning coating 110, may then be exposed to a vapor flux 532 (FIG. 5) of the deposited material 531 to form a closed coating 140 of the deposited layer 130 on the EIL 239 in the second portion 102, and a discontinuous layer 160 of the deposited material 531 on the ETL 237 in the first portion 101. In such non-limiting example, several stages for fabricating the device 200 may be reduced.Emissive Region(s)

[0145] In some non-limiting examples, including where the OLED device 200 may comprise a display module, the lateral aspect of the device 200 may be sub-divided into a plurality of emissive regions 210 of the device 200, in which the longitudinal aspect of thedevice 200 structure, within each of the emissive region(s) 210, may cause EM radiation to be emitted therefrom when energized.

[0146] In some non-limiting examples, an individual emissive region 210 may have an associated pair of electrodes 220, 240, one of which may act as an anode and the other of which may act as a cathode, and at least one semiconducting layer 230 between them. Such an emissive region 210 may emit EM radiation at a given wavelength spectrum and may correspond to one of: a pixel 1015 (FIG. 10), and a sub-pixel 216 thereof ((sub-) pixel 1015 / 216). In some non-limiting examples, a plurality of sub-pixels 216, each corresponding to and emitting EM radiation of a different wavelength (range), may collectively form a pixel 1015.

[0147] In some non-limiting examples, the wavelength spectrum may correspond to a colour in, without limitation, the visible spectrum. The EM radiation at a first wavelength (range) emitted by a first sub-pixel 216 of a pixel 1015 may perform differently than the EM radiation at a second wavelength (range) emitted by a second sub-pixel 216 thereof because of the different wavelength (range) involved.

[0148] In some non-limiting examples, an active region 208 of an individual emissive region 210 may be defined to be bounded, in the longitudinal aspect, by the first electrode 220 and the second electrode 240, and to be confined, in the lateral aspect, to an emissive region 210, defined by presence of each of the first electrode 220, the second electrode 240, and the at least one semiconducting layer 230 therebetween (“emissive region layers”), that is, the first electrode 220, the second electrode 240, and the at least one semiconducting layer 230 therebetween, overlap laterally.

[0149] Those having ordinary skill in the relevant art will appreciate that the lateral aspect of the emissive region 210, and thus the lateral boundaries of the active region 208, may not correspond to the entire lateral aspect of at least one of: the first electrode 220, and the second electrode 240. Rather, the lateral aspect of the emissive region 210 may be substantially no more than the lateral extent of either of the: first electrode 220, and second electrode 240. In some non-limiting examples, at least one of: parts of the first electrode 220 may be covered by at least one pixel definition layer (PDL) 209, and parts of the second electrode 240 may not be disposed on the at least one semiconducting layer 230, with the result, in at least one scenario, that the emissive region 210 may be laterally constrained thereby.

[0150] In some non-limiting examples, at least one of the various emissive region layers may be deposited by deposition of a corresponding constituent emissive region layer material.

[0151] In some non-limiting examples, some of the at least one semiconducting layers 230 may be laid out in a desired pattern by vapor deposition of the corresponding emissive region layer material through an FMM having apertures corresponding to the desired locations where the emissive region layer material is to be deposited. In some nonlimiting examples, a plurality of the emissive region layers may be laid out in a similar pattern, including without limitation, by depositing the respective emissive region layer material thereof in their respective deposition stages using an FMM.

[0152] In some non-limiting examples, as discussed herein, the emissive region layer material corresponding to at least one of the: first electrode 220, and second electrode 240, including without limitation, the second electrode 240, may be deposited by prior deposition of a patterning coating 110 by vapor deposition of a patterning material 411 through an FMM having apertures corresponding to the desired locations where the patterning coating 110 is to be deposited and thereafter depositing the emissive region layer material using one of: an open mask, and mask-free, deposition process.

[0153] In some non-limiting examples, the patterning coating 110 may be adapted to impact a propensity of a vapor flux 532 of a deposited material 531 of which the emissive region layer material may be comprised, to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 531 that is no more than an initial sticking probability against the deposition of the deposited material 531 of the exposed layer surface 11 of the at least one semiconducting layer 230.

[0154] In some non-limiting examples, the first electrode 220 may be disposed over an exposed layer surface 11 of the device 200, in some non-limiting examples, within at least a part of the lateral aspect of the emissive region 210. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 1015 / 216, the exposed layer surface 11, may, at the time of deposition of the first electrode 220, comprise the TFT insulating layer 207 of the various TFT structures 206 that make up the driving circuit for the emissive region 210 corresponding to a single display (sub-) pixel 1015 / 216.

[0155] In some non-limiting examples, the TFT insulating layer 207 may be formed with an opening extending therethrough to permit the first electrode 220 to be electrically coupled with a TFT electrode including, without limitation, a TFT drain electrode.

[0156] Those having ordinary skill in the relevant art will appreciate that the driving circuit may comprise a plurality of TFT structures 206. In FIG. 2, for purposes of simplicity of illustration, only one TFT structure 206 may be shown, but it will be appreciated by those having ordinary skill in the relevant art, that such TFT structure 206 may be representative of at least one of: such plurality thereof, and at least one component thereof, that comprise the driving circuit.

[0157] In some non-limiting examples, an extremity of the first electrode 220 may be covered by at least one PDL 209 such that a part of the at least one PDL 209 may be interposed between the first electrode 220 and the at least one semiconducting layer 230, such that such extremity of the first electrode 220 may lie beyond the active region 208 of the associated emissive region 210.

[0158] In some non-limiting examples, the at least one semiconducting layer 230 (including without limitation, at least one of layers 231, 233, 235, 237, 239 thereof) may be deposited over the exposed layer surface 11 of the device 200, including at least a part of the lateral aspect of such emissive region 210 of the (sub-) pixel(s) 1015 / 216. In some nonlimiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 1015 / 216, such exposed layer surface 11, may, at the time of deposition of such at least one semiconducting layer 230 comprise the first electrode 220.

[0159] In some non-limiting examples, the at least one semiconducting layer 230 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 1015 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 211. In some non-limiting examples, such exposed layer surface 11 of such surrounding non-emissive region(s) 211 may, at the time of deposition of the at least one semiconducting layer 230, comprise the PDL(s) 209.

[0160] In some non-limiting examples, the second electrode 240 may be disposed over an exposed layer surface 11 of the device 200, including at least a part of the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 1015 / 216. In some non-limiting examples, at least within the lateral aspect of the emissive region 210 of the (sub-) pixel(s)1015 / 216, such exposed layer surface 11, may, at the time of deposition of the second electrode 220, comprise the at least one semiconducting layer 230.

[0161] In some non-limiting examples, the second electrode 240 may also extend beyond the lateral aspect of the emissive region 210 of the (sub-) pixel(s) 1015 / 216 and at least partially within the lateral aspects of the surrounding non-emissive region(s) 211. In some non-limiting examples, an exposed layer surface 11 of such surrounding non-emissive region(s) 211 may, at the time of deposition of the second electrode 240, comprise the PDL(s) 209.

[0162] In some non-limiting examples, the second electrode 240 may extend throughout a substantial part, including without limitation, substantially all, of the lateral aspects of the surrounding non-emissive region(s) 211.

[0163] In some non-limiting examples, individual emissive regions 210 of the device 200 may be laid out in a lateral pattern. In some non-limiting examples, the pattern may extend along a first lateral direction. In some non-limiting examples, the pattern may also extend along a second lateral direction, which in some non-limiting examples, may extend at an angle relative to the first lateral direction. In some non-limiting examples, the second lateral direction may be substantially normal to the first lateral direction. In some non-limiting examples, the pattern may have a number of elements in such pattern, each element being characterized by at least one feature thereof, including without limitation, at least one of a wavelength of EM radiation emitted by the emissive region 210 thereof, a shape of such emissive region 210, a dimension (along at least one of the first, and second, lateral directi on(s)), an orientation (relative to at least one of the first, and second, lateral directi on(s)), and a spacing (relative to at least one of the first, and second, lateral direction(s)) from a previous element in the pattern. In some non-limiting examples, the pattern may repeat in at least one of the: first, and second, lateral direction(s).

[0164] In some non-limiting examples, each individual emissive region 210 of the device 200 may be associated with, and driven by, a corresponding driving circuit within the backplane 202 of the device 200, for driving an OLED structure for the associated emissive region 210. In some non-limiting examples, including without limitation, where the emissive regions 210 may be laid out in a regular pattern extending in both the first (row) lateral direction and the second (column) lateral direction, there may be a signal line in the backplane 202, corresponding to each row of emissive regions 210 extending in thefirst lateral direction and a signal line, corresponding to each column of emissive regions 210 extending in the second lateral direction. In such a non-limiting configuration, a signal on a row selection line may energize the respective gates of the switching TFT structure(s) 206 electrically coupled therewith and a signal on a data line may energize the respective sources of the switching TFT structure(s) 206 electrically coupled therewith, such that a signal on a row selection line / data line pair may electrically couple and energise, by the positive terminal of the power source, the anode of the OLED structure of the emissive region 210 associated with such pair, causing the emission of a photon therefrom, the cathode thereof being electrically coupled with the negative terminal of the power source.

[0165] In some non-limiting examples, a single display pixel 1015 may comprise three sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of a: R(ed) sub-pixel 216R, G(reen) sub-pixel 216G, and B(lue) sub-pixel 216B. In some nonlimiting examples, a single display pixel 1015 may comprise four sub-pixels 216, each corresponding respectively to a single sub-pixel 216 of each of two colours, including without limitation, a R(ed) sub-pixel 216R, and a B(lue) sub-pixel 216B, and two sub-pixels 216 of a third colour, including without limitation, a G(reen) sub-pixel 216G. In some nonlimiting examples, a single display pixel 1015 may comprise four sub-pixels 216, which in some non-limiting examples, may correspond respectively to a single sub-pixel 216 of each of three colours, including without limitation, at least one of a: R(ed) sub-pixel 216R, G(reen) sub-pixel 216G, and B(lue) sub-pixel 216B, and a fourth, W(hite) sub-pixel 216w.

[0166] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub-) pixel 1015 / 216 may correspond to the colour by which the (sub-) pixel 1015 / 216 may be denoted. In some non-limiting examples, the wavelength of the EM radiation may not correspond to such colour, but further processing may be performed, in a manner apparent to those having ordinary skill in the relevant art, to transform the wavelength to one that does so correspond.

[0167] In some non-limiting examples, the emission spectrum of the EM radiation emitted by a given (sub-) pixel 1015 / 216, corresponding to the colour by which the (sub-) pixel 1015 / 216 may be denoted, may be related to at least one of the: structure, and composition, of the at least one semiconducting layer 230 extending between the first electrode 220 and the second electrode 240 thereof, including without limitation, the at leastone EML 235. In some non-limiting examples, the at least one EML 235 of the at least one semiconducting layer 230 may be tuned to facilitate the emission of EM radiation having an emission spectrum corresponding to the colour by which the (sub-) pixel 1015 / 216 may be denoted. In some non-limiting examples, the EML 235 of a R(ed) sub-pixel 216R may comprise a R(ed) EML material, including without limitation, a host material doped with a R(ed) emitter material. In some non-limiting examples, the EML 235 of a G(reen) subpixel 216G may comprise a G(reen) EML material, including without limitation, a host material doped with a G(reen) emitter material. In some non-limiting examples, the EML 235 of a B(lue) sub-pixel 216B may comprise B(lue) EML material, including without limitation, a host material doped with a B(lue) emitter material.

[0168] In some non-limiting examples, at least one characteristic of at least one of the at least one semiconducting layer 230, including without limitation, the: HIL 231, HTL 233, EML 235, ETL 237, and EIL 239, including without limitation, a presence thereof, an absence thereof, a thickness thereof, a composition thereof, and an order thereof, in the longitudinal aspect, may be selected to facilitate emission therefrom of EM radiation having a wavelength spectrum corresponding to the colour by which a given sub-pixel 216 may be denoted, including without limitation, at least one of: R(ed), G(reen), and B(lue).

[0169] In some non-limiting examples, emission of EM radiation having a wavelength spectrum corresponding to a plurality of colours selected from: R(ed), G(reen), and B(lue), may facilitate emission of EM radiation having a wavelength spectrum corresponding to a different colour, including without limitation, W(hite) (R+G+B), Y(ellow) (R+G), C(yan) (G+B), and M(agenta) (B+R), according to the additive colour model.

[0170] In some non-limiting examples, the exposed layer surface 11 of the device 100 may be exposed to a vapor flux 532 of a deposited material 531, including without limitation, in one of: an open mask, and mask-free, deposition process.

[0171] In some non-limiting examples, in at least a part of the emissive region 210, the at least one semiconducting layer 230 may be deposited over the exposed layer surface 11 of the device 200, which may, in some non-limiting examples, comprise the first electrode 220.

[0172] In some non-limiting examples, the exposed layer surface 11 of the device 200, which may, in some non-limiting examples, comprise the at least one semiconducting layer 230, may be exposed to a vapor flux 412 of the patterning material 411, including without limitation, using a shadow mask 415, to form a patterning coating 110 in the first portion 101. Whether a shadow mask 415 is employed, the patterning coating 110 may be restricted, in its lateral aspect, substantially to a transmissive region 212.

[0173] In some non-limiting examples, a lateral aspect of at least one emissive region 210 may extend across and include at least one TFT structure 206 associated therewith, for driving the emissive region 210 along data and scan lines (not shown), which, in some non-limiting examples, may be formed of at least one of: Cu, and a TCO.

[0174] In some non-limiting examples, the (sub-) pixels 1015 / 216 may be disposed in a side-by-side arrangement. In some non-limiting examples, a (colour) order of the subpixels 216 of a first pixel 1015 may be the same as a (colour) order of the sub-pixels 216 of a second pixel 1015. In some non-limiting examples, a (colour) order of the sub-pixels 216 of a first pixel 1015 may be different from a (colour) order of the sub-pixels 216 of a second pixel 1015.

[0175] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 1015 may be aligned in at least one of a: row, column, and array, arrangement.

[0176] In some non-limiting examples, a first at least one of a: row, and column, of aligned sub-pixels 216 of adjacent pixels 1015 may comprise sub-pixels 216 of one of a: same, and different, colour.

[0177] In some non-limiting examples, a first at least one of a: row, and column, of aligned sub-pixels 216 of adjacent pixels 1015 may be aligned with at least one of a: second, and third, at least one of a: row, and column, of aligned sub-pixels 216 of adjacent pixels 1015.

[0178] In some non-limiting examples, a first at least one of a: row, and column, of aligned sub-pixels 216 of adjacent pixels 1015 may be one of: offset from, and mis-aligned with, at least one of a: second, and third, at least one of a: row, and column, of aligned subpixels 216 of adjacent pixels 1015.

[0179] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 1015 of such at least one of a: first, second, and third, at least one of a: row, and column, may bearranged such that corresponding sub-pixels 216 of each of the at least one of: first, second, and third, at least one of a: row, and column, may be of a same colour.

[0180] In some non-limiting examples, the sub-pixels 216 of adjacent pixels 1015 of such at least one of a: first, second, and third, at least one of a: row, and column, may be arranged such that corresponding sub-pixels 216 of each of the at least one of: first, second and third, at least one of a: row, and column, may be of different colours.

[0181] In some non-limiting examples, in the at least one signal-exchanging part 303 (FIG. 3) of a display panel 300 (FIG. 3), the at least one transmissive region 212 may be disposed between a plurality of emissive regions 210. In some non-limiting examples, the at least one transmissive region 212 may be disposed between adjacent (sub-) pixels 1015 / 216. In some non-limiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 212 may form part of a same pixel 1015. In some nonlimiting examples, the adjacent sub-pixels 216 surrounding the at least one transmissive region 212 may be associated with different pixels 1015.

[0182] In some non-limiting examples, a region that may be substantially devoid of a closed coating 140 of a second electrode material (“cathode-free region”), including without limitation, the at least one transmissive region 212, in some non-limiting examples, may exhibit different opto-electronic characteristics from other regions, including without limitation, the at least one emissive region 210. In some non-limiting examples, such cathode-free regions may nevertheless comprise some second electrode material, including without limitation, in the form of a discontinuous layer 160 of one of: at least one particle structure 150, and at least one instance of such particle structures 150.

[0183] In some non-limiting examples, this may be achieved by laser ablation of the second electrode material. However, in some non-limiting examples, laser ablation may create a debris cloud, which may impact the vapour deposition process.

[0184] In some non-limiting examples, this may be achieved by disposing a patterning coating 110, which may, in some non-limiting examples, be a nucleation inhibiting coating (NIC), using an FMM, in a pattern on an exposed layer surface 11 of the at least one semiconducting layer 230 prior to depositing a deposited material 531 for forming the second electrode 240 thereon.

[0185] In some non-limiting examples, the patterning coating 110 may be adapted to impact a propensity of a vapor flux 532 of the deposited material 531 to be deposited thereon, including without limitation, an initial sticking probability against the deposition of the deposited material 531 that is no more than an initial sticking probability against the deposition of the deposited material 531 of the exposed layer surface 11 of the at least one semiconducting layer 230.

[0186] In some non-limiting examples, the patterning coating 110 may be deposited in a pattern that may correspond to the first portion 101 of a lateral aspect, including without limitation, of at least some of the transmissive regions 212.

[0187] In some non-limiting examples, the patterning coating 110 may be deposited in a plurality of stages, each using a different FMM defining a different pattern within the first portion 101, that respectively correspond to a different subset of the transmissive regions 212.

[0188] In some non-limiting examples, the display panel 300 may, subsequent to (all of the stages of) the deposition of the patterning coating 110, be subjected to a vapor flux 532 of the deposited material 531, in one of: an open mask, and mask-free, deposition process, to form the second electrode 240 for each of the emissive regions 210 corresponding to a (sub-) pixel 1015 / 216 in at least the second portion 102 of the lateral aspect, but not in the first portion 101 of the lateral aspect.

[0189] In some non-limiting examples, although not shown, the overlying layer 170 may be arranged above at least one of: the second electrode 240, and the patterning coating 110. In some non-limiting examples, although not shown, the overlying layer 170 may be deposited at least partially across the lateral extent of the opto-electronic device 200, in some non-limiting examples, covering the second electrode 240 in the second portion 102, and, in some non-limiting examples, at least partially covering the at least one particle structure 150 and forming an interface with the patterning coating 110 at the exposed layer surface 11 thereof in the first portion 101.Non-Emissive Regions

[0190] In some non-limiting examples, the various emissive regions 210 of the device 200 may be substantially surrounded and separated by, in at least one lateral direction, at least one non-emissive region 211, in which at least one of: the structure, andconfiguration, along the longitudinal aspect, of the device 200 shown, without limitation, may be varied, to substantially inhibit EM radiation to be emitted therefrom.

[0191] In some non-limiting examples, the non-emissive regions 211 may comprise those regions in the lateral aspect, that are substantially devoid of an emissive region 210.

[0192] In some non-limiting examples, the longitudinal topology of the various layers of the at least one semiconducting layer 230 may be varied to define at least one emissive region 210, surrounded (at least in one lateral direction) by at least one non- emissive region 211.

[0193] In some non-limiting examples, while an implementation of the longitudinal aspect of the device 200 as applied to an emissive region 210 corresponding to a single display (sub-) pixel 1015 / 216 of the display 200 may be shown to have features that may be specific to the emissive region 210, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, more than one emissive region 210 may encompass features in common.

[0194] In some non-limiting examples, the lateral aspects of the surrounding non- emissive region(s) 211 may be characterized by the presence of a corresponding PDL 209.

[0195] In some non-limiting examples, a thickness of the PDL 209 may increase from a minimum, where it covers the extremity of the first electrode 220, to a maximum beyond the lateral extent of the first electrode 220. In some non-limiting examples, a change in thickness of the at least one PDL 209 may define a valley shape centered about the emissive region 210. In some non-limiting examples, the valley shape may constrain a field of view (FOV) of the EM radiation emitted by the emissive region 210.

[0196] While the PDL(s) 209 have been generally illustrated herein as having a linearly-sloped surface to form a valley-shaped configuration that define the emissive region(s) 210 surrounded thereby, those having ordinary skill in the relevant art will appreciate that in some non-limiting examples, at least one of the: shape, aspect ratio, thickness, width, and configuration, of such PDL(s) 209 may be varied. In some nonlimiting examples, a PDL 209 may be formed with one of a: substantially steep, and more gradually sloped, part. In some non-limiting examples, such PDL(s) 209 may be configured to extend substantially normally away from a surface on which it is deposited, that may cover at least one edge of the first electrode 220. In some non-limiting examples, suchPDL(s) 209 may be configured to have deposited thereon at least one semiconducting layer 230 by a solution-processing technology, including without limitation, by printing, including without limitation, ink-jet printing.

[0197] In some non-limiting examples, the PDLs 209 may be deposited substantially over the TFT insulating layer 207, although, as shown, in some non-limiting examples, the PDLs 209 may also extend over at least a part of the deposited first electrode 220, including without limitation, its outer edges.

[0198] In some non-limiting examples, the lateral extent of at least one of the non- emissive regions 211 may be at least, and in some non-limiting examples, exceed, including without limitation, be a multiple of, the lateral extent of the emissive region 210 interposed therebetween.

[0199] In some non-limiting examples, a thickness of at least one PDL 209 in at least one transmissive region 212, in some non-limiting examples, of at least one non- emissive region 211, interposed between adjacent emissive regions 210, in some nonlimiting examples, at least in a region laterally spaced apart therefrom, and in some nonlimiting examples, although not shown, of the TFT insulating layer 207, may be reduced in order to enhance at least one of a: transmittivity, and transmittivity angle, relative to, and through, the layers of a display panel 300, to facilitate transmission of EM radiation therethrough.Patterning

[0200] In some non-limiting examples, with reference to FIG. 1, in some nonlimiting examples, a patterning coating 110, comprising a patterning material 411, which in some non-limiting examples, may be an NIC material, may be disposed, in some nonlimiting examples, as a closed coating 140, on an exposed layer surface 11 of an underlying layer 710, including without limitation, a substrate 10, of the device 100, in some nonlimiting examples, restricted in lateral extent by selective deposition, including without limitation, using a shadow mask 415 such as, without limitation, an FMM, including without limitation, to the first portion 101.

[0201] Thus, in some non-limiting examples, in the second portion 102 of the device 100, the exposed layer surface 11 of the underlying layer 710 of the device 100, may be substantially devoid of a closed coating 140 of the patterning coating 110.Patterning Coating

[0202] The patterning coating 110 may comprise a patterning material 411. In some non-limiting examples, the patterning material 411 may comprise an NIC material. In some non-limiting examples, the patterning coating 110 may comprise a closed coating 140 of the patterning material 411.

[0203] The patterning coating 110 may provide an exposed layer surface 11 with a substantially low propensity (including without limitation, a substantially low initial sticking probability) (in some non-limiting examples, under the conditions identified in the dual QCM technique described by Walker et al.) against the deposition of a deposited material 531 to be deposited thereon upon exposing such surface to a vapor flux 532 of the deposited material 531, which, in some non-limiting examples, may be substantially no more than a propensity against the deposition of the deposited material 531 to be deposited on the exposed layer surface 11 of the underlying layer 710 of the device 100, upon which the patterning coating 110 has been deposited.

[0204] Because of the attributes, including without limitation, a low initial sticking probability, of at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited material 531, the exposed layer surface 11 of the first portion 101 comprising the patterning coating 110 may be substantially devoid of a closed coating 140 of the deposited material 531.

[0205] In some non-limiting examples, exposure of the device 100 to a vapor flux 532 of the deposited material 531 may, in some non-limiting examples, result in the formation of a closed coating 140 of a deposited layer 130 of the deposited material 531 in the second portion 102, where the exposed layer surface 11 of the underlying layer 710 may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0206] In some non-limiting examples, the patterning coating 110 may be an NIC that provides high deposition (patterning) contrast against subsequent deposition of the deposited material 531, such that the deposited material 531 tends not to be deposited, in some non-limiting examples, as a closed coating 140, where the patterning coating 110 has been deposited.

[0207] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the patterning coating 110 in the first portion 101 being subjected to a vapor flux 532 of a deposited material 531. In at least some applications, the attributes of the patterning coating 110 may be such that a closed coating 140 of the deposited material 531 may be formed in the second portion 102, which may be substantially devoid of the patterning coating 110, while only a discontinuous layer 160 of at least one particle structure 150 having at least one characteristic may be formed in the first portion 101 on the patterning coating 110.

[0208] For purposes of simplicity of discussion, in the present disclosure, to the extent that a patterning coating 110 is deposited to act as a base for the deposition of at least one particle structure 150 thereon, such patterning coating 110 may be designated as a particle structure patterning coating 110p. By contrast, to the extent that a patterning coating 110 is deposited in a first portion 101 to substantially preclude formation in such first portion 101 of a closed coating 140 of the deposited layer 130, thus restricting the deposition of a closed coating 140 of the deposited layer 130 to a second portion 102, such patterning coating 110 may be designated as a non-particle structure patterning coating 110n. Those having ordinary skill in the relevant art will appreciate that in some nonlimiting examples, a patterning coating 110 may act as both a particle structure patterning coating 110pand a non-particle structure patterning coating 110n.

[0209] In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 531, which may be, in some non-limiting examples, of one of a: metal, and metal alloy (metal / alloy), including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, in the second portion 102, while depositing a closed coating 140 of the deposited material 531 having a thickness of, without limitation, one of no more than about: 100, 50, 25, and 15, nm. In some non-limiting examples, an amount of the deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1- 50%, 2-25%, 5-20%, and 7-10%, of the amount of, the deposited material 531 deposited as a closed coating 140 in the second portion 102, which, in some non-limiting examples may correspond to a thickness of one of no more than about: 100, 75, 50, 25, and 15, nm.

[0210] In some non-limiting examples, the patterning coating 110 may be disposed in a pattern that may be defined by at least one region therein that may be substantially devoid of a closed coating 140 of the patterning coating 110.

[0211] In some non-limiting examples, the at least one region may separate the patterning coating 110 into a plurality of discrete fragments thereof. In some non-limiting examples, the plurality of discrete fragments of the patterning coating 110 may be physically spaced apart from one another in the lateral aspect thereof. In some non-limiting examples, the plurality of the discrete fragments of the patterning coating 110 may be arranged in a regular structure, including without limitation, an array (matrix), such that in some non-limiting examples, the discrete fragments of the patterning coating 110 may be configured in a repeating pattern.

[0212] In some non-limiting examples, at least one of the plurality of the discrete fragments of the patterning coating 110 may each correspond to an emissive region 210. In some non-limiting examples, an aperture ratio of the emissive regions 210 may be one of no more than about: 50%, 40%, 30%, and 20%.

[0213] In some non-limiting examples, the patterning coating 110 may be formed as a single monolithic coating.Thin Patterning Coating

[0214] In some non-limiting examples, a material, including without limitation, the patterning material 411, of which a coating may be comprised, may exhibit a bulk melting point in a bulk form of a substantially large at least one of quantity, size, and mass.

[0215] Without wishing to be bound by any particular theory, it has been found that a patterning coating 110, comprising at least one patterning material 411 having a substantially low bulk melting point, may have increased applicability in certain scenarios calling for at least one of a: substantially high deposition contrast, and substantially low initial sticking probability, including without limitation, scenarios calling for at least one of a substantial absence of a closed coating 140, and at least one of a: substantially low density, and substantially small size, of particle structures 150 in the first portion 101, following exposure of the patterning coating 110 to an evaporated flux 532 of the deposited material 531.

[0216] In some non-limiting examples, a material, including without limitation, a patterning material 411, with a substantially low surface energy, may tend to exhibit a substantially low bulk melting point.

[0217] In some non-limiting examples, a material, including without limitation, a patterning material 411, with substantially low inter-molecular forces, may tend to exhibit a substantially low bulk melting point.

[0218] In some non-limiting examples, a patterning material 411, of which a patterning coating 110 may be comprised, may have a bulk melting point that is no more than one of about: 100°C, 95°C, 90°C, 85°C, 80°C, 75°C, and 70°C.

[0219] In some non-limiting examples, a material, including without limitation, the patterning material 411, when deposited as a film, may exhibit a film melting point.

[0220] In some non-limiting examples, a film melting point of a coating, including without limitation, a patterning coating 110, may be comparable, including without limitation, close, and substantially equal, to the bulk melting point of the material of which the coating may be comprised. Accordingly, in some non-limiting examples, such patterning coating 110 comprising a patterning material 411 having a substantially low bulk melting point may have reduced at least one of: thermal stability, and substantial reliability, in some non-limiting examples, due to low inter-molecular forces, when heated to substantially high temperature close to, including without limitation, one of: at, and above, a bulk melting point of the patterning material 411, during at least one of the: manufacture, including without limitation, a deposition process, and operation of the device 100, including without limitation, a display panel 300.

[0221] In some non-limiting examples, when heated to a substantially high temperature, including without limitation, one of at least about: 80°C, 90 °C, 100°C, and 110 °C, the patterning material 411 in the patterning coating 110 may exhibit at least one of: changes in physical properties, and phase transformations, including without limitation, at least one of: melting at such substantially high temperature, and solidifying, upon cooling from such substantially high temperature, which may have an impact on at least one of the: long-term performance, stability, reliability, and lifetime, of the device 100.

[0222] In some non-limiting examples, the patterning coating 110 may initially be deposited as a substantially non-crystalline, including without limitation, substantially amorphous, coating. In some non-limiting examples, melting the patterning material 411, and concomitantly, the patterning coating 110, may cause at least one of: the patterning coating 110 itself, and a layer disposed adjacent thereto in the longitudinal aspect, including without limitation, at least one of: the overlying layer 170, and at least one semiconducting layer 230, to undergo crystallization upon cooling.

[0223] In some non-limiting examples, crystallization of such at least one of the: patterning coating 110 itself, and layer disposed adjacent thereto, may lead to at least one of: changes of the properties thereof, including without limitation, optical properties (including without limitation, increased scattering, and reduced transparency), and concomitantly, degradation of device performance, due to an amorphous layer becoming crystallized.

[0224] In some non-limiting examples, melting the patterning material 411, and concomitantly, the patterning coating 110, may cause failures in the device 100, which in some non-limiting examples, may be in a form of delamination thereof. In some nonlimiting examples, the delamination may occur as a result of adhesive failure, where in some non-limiting examples, a fracture may be formed between the delaminated coating, including without limitation, the patterning coating 110, and a layer disposed adjacent thereto in the longitudinal aspect. In some non-limiting examples, the delamination may occur as a result of cohesive failure, where a fracture may be formed within a coating, including without limitation, the patterning coating 110 itself, and the layer disposed adjacent thereto, such that the coating may be split apart, and part of the coating may still remain on a layer disposed adjacent thereto in the longitudinal aspect. In some non-limiting examples where the patterning material 411, and concomitantly the patterning coating 110 undergo crystallization, a likelihood of delamination may be increased since the crystallization may introduce irregularities to the patterning coating 110, and accordingly form a stress point to trigger the delamination.

[0225] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low bulk melting point and a substantially high film melting point when formed as a film, may have increased applicability in some scenarios calling for a substantially high deposition contrast and a substantially high thermal stability.

[0226] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, where a material, including without limitation, a patterning material 411, is deposited in a very thin film, as a(n) (average layer) thickness thereof reduces to a threshold thickness (“very thin thickness regime”), molecules of the material may tend to deposit in an ordered manner, such that in some non-limiting examples, they may align in a well-ordered orientation (“ordered orientation”). In some non-limiting examples, such ordered orientation may impart a different characteristic,including without limitation, a melting point, to the film compared to the characteristic that the material thereof may exhibit in a bulk form (cf. Macromol. Chem. Phys. 2023, 224, 2200455). Without wishing to be bound by any particular theory, it has been found that, in some non-limiting examples, the material, including without limitation, the patterning material 411, when formed as a coating in the very thin thickness regime, may exhibit a film melting point, which may be elevated (“elevated melting point”) relative to the bulk melting point that the material, of which the coating may be comprised, exhibits in a bulk form, resulting in a substantially high thermal stability even at temperatures above the bulk melting point of the material.

[0227] In some non-limiting examples, phase transformation, including without limitation, melting, and solidifying, of a material, including without limitation, a patterning material 411, deposited as a film, may initiate at an interface with a layer disposed adjacent thereto in the longitudinal aspect, including without limitation, an underlying layer 710.

[0228] Without wishing to be bound by any particular theory, in some non-limiting examples, interactions of the interfacial energies at an interface between the patterning coating 110 and the underlying layer 710 may affect an energy barrier for nucleation in a solidifying process. In some non-limiting examples, where a(n) (average layer) thickness of the patterning coating 110 is at least that of the threshold thickness, a film melting point of the patterning coating 110 may be substantially the same as a bulk melting point of the patterning material 411 as the bulk properties of the patterning material 411 may dominate the solidifying process.

[0229] Without wishing to be bound by any particular theory, in some non-limiting examples, as the thickness of the patterning coating 110 decreases below, including without limitation, to, the threshold thickness, which may be in a range of a single monolayer to a few monolayers, interfacial interactions of the patterning material 411 with a material of an adjacent layer, including without limitation, the underlying layer 710, at the interface (including without limitation, at least one of a: morphology, and property, thereof) therewith, may have a significant impact on an interfacial phase transformation compared to the bulk properties of the patterning material 411. In some non-limiting examples, it may be postulated that such interfacial interactions of the patterning material 411 with the underlying layer 710 may promote an ordered alignment of the molecules of the patterning materials 411 at, including without limitation, near, the interface, forming ordered (mono)layer(s). Without wishing to be bound by any particular theory, the ordered orientation of the molecules may facilitate the formation of stable nuclei due to favourable thermodynamic and kinetic properties of nucleation, leading to a substantially high film melting point of the patterning coating 110. Accordingly, at least one of: the solidifying may, and the melting may not, take place at a temperature above the bulk melting point of the patterning material 411.

[0230] In some non-limiting examples, such effect of a substantially high film melting point due to the ordered orientation of molecules may be readily observed in at least one of: polymeric, and oligomeric, materials.

[0231] In some non-limiting examples, the bulk melting point of a material may be determined using various methods apparent to those having ordinary skill in the relevant art, including without limitation, differential scanning calorimetry (DSC) and a melting-point apparatus.

[0232] In some non-limiting examples, a film melting point of a substantially thin coating may not be readily determined by methods, including without limitation, DSC, that may be used to measure a bulk melting point. In some non-limiting examples, the film melting point may be determined by various techniques known in the art, including without limitation, optical analysis methods for studying optical responses of thin films, including without limitation, ellipsometry, and thermal analysis methods for microstructures, including without limitation, hot stage microscopy (HSM).

[0233] In some non-limiting examples, a molecule of a patterning material 411 may comprise a first moiety and a second moiety coupled, including without limitation, bonded, thereto. In some non-limiting examples, the first moiety may be spaced apart from the second moiety. Without wishing to be bound by any particular theory, it may be postulated that, where, in some non-limiting examples, a patterning material 411 having such a molecular structure is deposited as a patterning coating 110 having a thickness that may be no more than the threshold thickness, one of the: first, and second, moieties, including without limitation, a terminal group thereof, of a majority of the molecules of the patterning material 411 may tend to be oriented toward an exposed layer surface 11 of the patterning coating 110.

[0234] In some non-limiting examples, the other one of the: first, and second, moieties, including without limitation, a terminal group thereof, of the majority of themolecules of the patterning material 411 in the patterning coating 110 may be oriented toward an exposed layer surface 11 of the underlying layer 710.

[0235] Without wishing to be bound by any particular theory, it may be postulated that an ability of the molecules of a material, including without limitation, a patterning material 411, to be oriented in a well-ordered manner in a thin film, resulting in an increase in the film melting point thereof, that may have increased applicability in some scenarios, may appear at a threshold (average layer) thickness of the film. In some non-limiting examples, such effect may be observed if the patterning coating 110 is in the very thin thickness regime, and in some non-limiting examples, may be facilitated, including without limitation, maximized, within a range thereof.

[0236] In some non-limiting examples, (a range of) the (average layer) thickness of the patterning coating 110, in which such substantially high film melting point may be observed, may be in a range of a single monolayer to a few monolayers of the patterning material 411, and accordingly, may, in some non-limiting examples, be correlated to a characteristic size of a molecular structure of the patterning material 411.

[0237] Without wishing to be bound by any particular theory, it may be postulated that if the patterning coating 110 is unduly thin, including without limitation, having a(n) (average layer) thickness no more than a minimum value, the patterning material 411 may not provide a substantial, including without limitation, complete, surface coverage over a target area of the underlying layer 710 in the device 100, such that a deposition contrast thereof may be impacted. In some non-limiting examples, such minimum value may be one of at least about: 1, and 2, monolayers.

[0238] Without wishing to be bound by any particular theory, it may be postulated that if a(n) (average layer) thickness of the patterning coating 110 is at least that of a maximum value, which in some non-limiting examples, may be the threshold thickness discussed herein, the elevation of the film melting point may become substantially unobservable, as the patterning coating 110 may exhibit increasingly more bulk properties of the patterning material 411, and the likelihood of the molecules of the patterning material 411 maintaining an ordered orientation may be substantially reduced. In some non-limiting examples, this may be caused, at least in part, due to the molecule orientation becoming increasingly disordered as additional molecules may be deposited to form a substantiallythick patterning coating 110. In some non-limiting examples, such maximum value may be one of at least about: 5, 6, 7, 8, 9, and 10, monolayers.

[0239] Accordingly, without wishing to be bound by any particular theory, it may be postulated that such substantially high film melting point, as a result of the ordered orientation, may be substantially restricted to a range of the thickness, including without limitation, the average layer thickness, of the patterning coating 110.

[0240] In some non-limiting examples, the average layer thickness of the patterning coating 110 for having a film melting point that is greater than the bulk melting point of the patterning material 411 may be one of between about: 1-5, 1-4, 1-3, and 1-2, monolayers.

[0241] In some non-limiting examples, the molecules of the patterning material 411 may have a molecular size of one of at least about: 4, 5, 6, 8, 10, 12, 15, 18, angstroms.

[0242] In some non-limiting examples, depending on a molecular size of the patterning material 411 of which the patterning coating 110 may be comprised, a range of the average layer thickness of the patterning coating 110 may be one of between about: 2-8, 2-7, 2-6, 3-6, and 3-5, nm.

[0243] In some non-limiting examples where the patterning material 110 comprises substantially only trichloro(lH,lH,2H,2H-perfluorodecyl)silane, an average layer thickness thereof may be between about 1.2-6 nm. In some non-limiting examples where the patterning coating 110 comprises substantially only tri ethoxy- 1H,1H,2H,2H- perfluorodecylsilane, an average layer thickness thereof may be between about 1.5-8.5 nm. In some non-limiting examples where the patterning coating 110 comprises substantially only (triethylsilyl)trifluoromethane, an average layer thickness thereof may be between about 0.5-3.5 nm. In some non-limiting examples where the patterning coating 110 comprises substantially only trichloro(3,3,3-trifluoropropyl)silane, an average layer thickness thereof may be between about 0.5-3.2 nm. In some non-limiting examples where the patterning coating 110 comprises substantially only dimethoxy(methyl)(3,3,3- trifluoropropyl)silane, an average layer thickness thereof may be between about 0.5-3.2 nm. In some non-limiting examples where the patterning coating 110 comprises substantially only dichloro(methyl)(3,3,3-trifluoropropyl)silane, an average layer thickness thereof may be between about 0.5-3.5 nm.

[0244] In some non-limiting examples, a difference between a film melting point of the patterning coating 110 and a bulk melting point of the patterning material 411, of which the patterning coating 110 may be comprised, may be one of at least about: 5°C, 8°C, 10°C, 12°C, 15°C, 18°C, 20°C, 25°C, and 30°C.

[0245] In some non-limiting examples, a film melting point of the patterning coating 110 may be one of at least about: 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 120°C, and 130°C.

[0246] Without wishing to be bound by any particular theory, it may be postulated that a material at the interface with the patterning coating 110, including without limitation, the material of an underlying layer 710, may impact an ability of the molecules of the patterning material 411 to take on an ordered orientation, and accordingly the extent to which the film melting point of the patterning coating 110 may be elevated compared to the bulk melting point of the patterning material 411.

[0247] In some non-limiting examples, a microstructure of an underlying material, of which the underlying layer 710 may be comprised, may facilitate an ordered orientation of the patterning material 411. In some non-limiting examples, characteristics of the lattice of such underlying material, including without limitation, lattice parameters, including without limitation, at least one of: a lattice constant, orientation, and a crystal symmetry, thereof, may correspond to, including without limitation, match, those of the patterning material 411, and may promote an ordered orientation of the molecules of the patterning coating 110.

[0248] In some non-limiting examples, a property of the underlying material may facilitate an ordered orientation of the patterning material 411. In some non-limiting examples, the underlying material may comprise an orientation material, and accordingly, the underlying layer 710 may be an orientation layer. In some non-limiting examples, at least one of: the orientation material may have a substantially high characteristic surface energy, in some non-limiting examples, relative to other materials, including without limitation, a patterning material 411, and the orientation layer may present a high surface energy at the exposed layer surface 11 thereof. In some non-limiting examples, a surface energy of the orientation layer may be at least that of a surface energy of the patterning coating 110.

[0249] In some non-limiting examples, the first moiety of the molecule of the patterning material 411 may have a critical surface tension that is at least that of a critical surface tension of the second moiety thereof and coupled thereto, such that the first moiety may comprise a high(er) critical surface tension component and the second moiety may comprise a low(er) critical surface tension component.

[0250] In some non-limiting examples, the first moiety of the patterning material 411 that may comprise a high(er) surface tension component may tend to be oriented toward an exposed layer surface 11 of the orientation layer having a high surface energy, because of various inter-molecular interactions with the orientation material upon being deposited on the orientation layer, such that in some non-limiting examples, the second moiety of the patterning material 411 that may comprise a low(er) surface tension component may tend to be oriented toward the exposed layer surface 11 of the patterning coating 110, thus presenting a low(er) surface energy surface to the deposited material 531.

[0251] Without wishing to be bound by any particular theory, it may be postulated that an orientation of the second moiety that may comprise a low(er) surface tension component toward the exposed layer surface 11 of the patterning coating 110 may, in some non-limiting examples, provide increased deposition contrast against the deposition of the deposited material 531 on an exposed layer surface 11 of the device 100, so as to substantially preclude deposition of the deposited material 531 on the exposed layer surface 11 of the patterning coating 110, including without limitation, as at least one of a closed coating 140, and at least one particle structure 150.

[0252] In some non-limiting examples, at least one of the: orientation layer, and orientation material, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the orientation layer within the device 100, may have a surface energy of one of at least about: 30, 35, 50, 60, 70, 80, 100, 200, and 500, dynes / cm.

[0253] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, a compound of the patterning material 411 comprising the first moiety having a substantially high critical surface tension of one of at least about: 50, 70, 80, 100, 150, 180, 200, 250, and 300, dynes / cm, and a molecular weight of the first moiety of one of between about: 50-500, 60-400, 70-300, 80-250, and 80-200, g / mol, mayhave applicability for providing the patterning coating 110 that may exhibit an enhanced deposition contrast when deposited in conjunction with the orientation layer.

[0254] It may be postulated that, for such moiety having a substantially high critical surface tension, a size of the moiety (reflected by one of a: molecular weight thereof, and characteristic length attributable thereto) that may be at least that of these ranges may increase a likelihood of such moiety becoming exposed to, including without limitation, interacting with, a vapor flux 532 of the deposited material 531, which may, in some nonlimiting examples, reduce a resulting deposition contrast. It may be postulated that a size of the moiety within at least one of the above ranges may allow the first moiety to at least one of: exhibit a degree of interm olecular interaction with the orientation material, possess a degree of rigidity, and accommodate bonding of a plurality of second moieties therewith, and therefore may have applicability as a patterning coating 110 in at least some applications.

[0255] In some non-limiting examples, the orientation material may be one of a: metal, and metallic material. Those having ordinary skill in the relevant art will appreciate that metals may tend to have a substantially high characteristic surface energy. In some non-limiting examples, the metallic material may comprise a pure metal. In some nonlimiting examples, the metallic material may comprise an alloy. In some non-limiting examples, the metallic material may comprise oxygen (O). In some non-limiting examples, the metallic material may comprise at least one metal and O. In some non-limiting examples, the metallic material may comprise a metal oxide. In some non-limiting examples, the metal oxide may comprise at least one of: Zn, indium (In), Sn, antimony (Sb), and gallium (Ga). In some non-limiting examples, the metal oxide may be a transparent conducting oxide (TCO). In some non-limiting examples, the TCO may comprise at least one of: indium titanium oxide (ITO), ZnO, indium zinc oxide (IZO), fluorine tin oxide (FTO) and indium gallium zinc oxide (IGZO). In some non-limiting examples, the TCO may be electrically doped with other elements. In some non-limiting examples, the metallic material may comprise at least one metal (alloy) and at least one metal oxide.

[0256] In some non-limiting examples, at least one of the: orientation layer, and orientation material, in some non-limiting examples, when deposited as at least one of: a film, and a coating in a form, and under similar circumstances to the deposition of the orientation layer within the device 100, may be electrically conductive.

[0257] In some non-limiting examples, the metallic material may comprise an element selected from potassium (K), sodium (Na), lithium (Li), barium (Ba), cesium (Cs), Yb, Ag, gold (Au), Cu, aluminum (Al), magnesium (Mg), zinc (Zn), cadmium (Cd), tin (Sn), yttrium (Y), nickel (Ni), titanium (Ti), palladium (Pd), chromium (Cr), iron (Fe), cobalt (Co), zirconium (Zr), platinum (Pt), vanadium (V), niobium (Nb), iridium (Ir), osmium (Os), tantalum (Ta), molybdenum (Mo), and tungsten (W).

[0258] In some non-limiting examples, the orientation material may be a non- metallic material. In some non-limiting examples, the orientation material may be a semiconducting material. In some non-limiting examples, the orientation material may be an insulating material. In some non-limiting examples, the orientation material may be an organic material. In some non-limiting examples, the orientation material may be an inorganic material.

[0259] In some non-limiting examples, the orientation material may be silver (Ag), ytterbium (Yb), a magnesium-Ag alloy (MgAg), including without limitation, in a composition of about 1 :9 by volume, copper (Cu), fullerene, including without limitation Ceo, aluminum fluoride (AIF3), and molybdenum tri oxide (MoOs).

[0260] In some non-limiting examples, the metallic material may comprise other metals in place of / in combination with, Ag. In some non-limiting examples, the metallic material may comprise an alloy of Ag with at least one other metal. In some non-limiting examples, the metallic material may comprise an alloy of Ag with at least one of: Mg, and Yb. In some non-limiting examples, such alloy may be a binary alloy having a composition from about 5 vol.% Ag to about 95 vol.% Ag, with the remainder being the other metal. In some non-limiting examples, the metallic material may comprise Ag and Mg. In some nonlimiting examples, the metallic material may comprise an Ag:Mg alloy having a composition from about 1 : 10 to about 10: 1 by volume. In some non-limiting examples, the metallic material may comprise Ag and Yb. In some non-limiting examples, the metallic material may comprise a Yb:Ag alloy having a composition from about 1 :20 to about 1-10: 1 by volume. In some non-limiting examples, the metallic material may comprise Mg and Yb. In some non-limiting examples, the metallic material may comprise an Mg: Yb alloy. In some non-limiting examples, the metallic material may comprise Ag, Mg, and Yb. In some non-limiting examples, the metallic material may comprise an Ag:Mg: Yb alloy.

[0261] In some non-limiting examples, the orientation layer may comprise a plurality of layers of the metallic material. In some non-limiting examples, the metallic material of a first one of the plurality of layers may be different from the metallic material of a second one of the plurality of layers. In some non-limiting examples, the metallic material of the first one of the plurality of layers may comprise a metal and the metallic material of the second one of the plurality of layers may comprise a metal oxide. In some non-limiting examples, the metallic material of at least one of the plurality of layers may comprise Yb. In some non-limiting examples, the metallic material of one of the plurality of layers may comprise one of: an Ag-containing, an AgMg-containing, alloy, pure Ag, substantially pure Ag, pure Mg, and substantially pure Mg. In some non-limiting examples, the orientation layer may be a bilayer Yb / AgMg coating. In some non-limiting examples, a first one of the plurality of layers that is proximate to the patterning coating 110 may comprise an element selected from one of: Ag, Au, Cu, Al, Sn, Ni, Ti, Pd, Cr, Fe, Co, Zr, Pt, V, Nb, Ir, Os, Ta, Mo, and W. In some non-limiting examples, the metallic material of at least one of the plurality of layers may comprise a metal having a work function that is no more than about 4 eV.

[0262] In some non-limiting examples, the orientation layer may comprise at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element, including without limitation, at least one of: O, sulfur (S), nitrogen (N), and carbon (C). Those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, such additional element(s) may be incorporated into the orientation layer as a contaminant, due to the presence of such additional element(s) in at least one of: the source material, equipment used for deposition, and the vacuum chamber environment. In some non-limiting examples, the concentration of such additional element(s) may be limited to be below a threshold concentration. In some non-limiting examples, a concentration of the non-metallic element in the metallic material may be one of no more than about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

[0263] In some non-limiting examples, an interface between the patterning coating and the orientation layer may be substantially devoid of chemisorption.Attributes of Patterning Coating / MaterialComposition

[0264] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, may comprise at least one of: a fluorine (F) atom, and a silicon (Si) atom. In some non-limiting examples, the patterning material 411 for forming the patterning coating 110 may be a compound that comprises at least one of: F and Si.

[0265] In some non-limiting examples, the patterning material 411 may comprise a compound that comprises F. In some non-limiting examples, the patterning material 411 may comprise a compound that comprises F and a carbon (C) atom. In some non-limiting examples, the patterning material 411 may comprise a compound that comprises F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 0.5, 0.7, 1, 1.5, 2, and 2.5.

[0266] In some non-limiting examples, an atomic ratio of F to C may be determined by counting the F atoms present in the compound structure, and for C atoms, only counting the sp3hybridized C atoms present in the compound structure. In some non-limiting examples, the patterning material 411 may comprise a compound that comprises, as part of its molecular sub-structure, a moiety comprising F and C in an atomic ratio corresponding to a quotient of F / C of one of at least about: 1, 1.5, and 2.

[0267] In some non-limiting examples, the patterning material 411 may comprise an organic-inorganic hybrid material.

[0268] In some non-limiting examples, the patterning material 411 may comprise an oligomer.

[0269] In some non-limiting examples, the patterning material 411 may comprise a compound having a molecular structure comprising a backbone and at least one functional group bonded to the backbone. In some non-limiting examples, the backbone may be an inorganic moiety, and the at least one functional group may be an organic moiety.

[0270] In some non-limiting examples, such compound may have a molecular structure comprising a siloxane group. In some non-limiting examples, the siloxane group may be one of a: linear , branched, and cyclic, siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group. In some non-limiting examples, the backbone may comprise a siloxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro-siloxanes, including without limitation, Example Material 6 and Example Material 9 (discussed below).

[0271] In some non-limiting examples, the compound may have a molecular structure comprising a silsesquioxane group. In some non-limiting examples, the silsesquioxane group may be a POSS. In some non-limiting examples, the backbone may comprise a silsesquioxane group. In some non-limiting examples, the backbone may comprise a silsesquioxane group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group. In some non-limiting examples, such compound may comprise fluoro- silsesquioxane and fluoro-POSS, including without limitation, Example Material 8 (discussed below).

[0272] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group. In some non-limiting examples, the aryl group may be at least one of: phenyl, and naphthyl. In some non-limiting examples, at least one C atom of an aryl group may be substituted by a heteroatom, which in some nonlimiting examples may be at least one of: O, N, and S, to derive a heteroaryl group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group. In some non-limiting examples, the backbone may comprise at least one of: a substituted aryl, an unsubstituted aryl, a substituted heteroaryl, and an unsubstituted heteroaryl, group and at least one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group.

[0273] In some non-limiting examples, the compound may have a molecular structure comprising at least one of: a substituted , an unsubstituted , a linear , a branched , and a cyclic, hydrocarbon group. In some non-limiting examples, at least one C atom of the hydrocarbon group may be substituted by a heteroatom, including without limitation, at least one of: O, N, and S.

[0274] In some non-limiting examples, the compound may have a molecular structure comprising a phosphazene group. In some non-limiting examples, the phosphazene group may be at least one of a: linear, branched, and cyclic, phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group. In some non-limiting examples, the backbone may comprise a phosphazene group and atleast one functional group comprising F. In some non-limiting examples, the at least one functional group comprising F may be a fluoroalkyl group, including without limitation, a fluoro-phosphazene, including without limitation, Example Material 4 (discussed below).

[0275] In some non-limiting examples, the compound may be a fluoropolymer. In some non-limiting examples, the compound may be a block copolymer comprising F. In some non-limiting examples, the compound may be an oligomer. In some non-limiting examples, the oligomer may be a fluorooligomer. In some non-limiting examples, the compound may be a block oligomer comprising F. In some non-limiting examples, at least one of a: fluoropolymer, and fluorooligomer, may include those having the molecular structure of at least one of: Example Material 3, Example Material 5, and Example Material 7 (discussed herein).

[0276] In some non-limiting examples, the compound may be a metal complex. In some non-limiting examples, the metal complex may be an organo-metal complex. In some non-limiting examples, the organo-metal complex may comprise F. In some non-limiting examples, the organo-metal complex may comprise at least one ligand comprising F. In some non-limiting examples, the at least one ligand comprising F may comprise a fluoroalkyl group.

[0277] In some non-limiting examples, the patterning material 411 may comprise a plurality of different materials.Initial Sticking Probability

[0278] In some non-limiting examples, the initial sticking probability of the patterning material 411 may be determined by depositing such material as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, having sufficient thickness so as to mitigate / reduce any effects on the degree of inter-molecular interaction with the underlying layer 710 upon deposition on a surface thereof. In some non-limiting examples, the initial sticking probability may be measured on a film / coating having a thickness of one of at least about: 20, 25, 30, 50, 60, and 100, nm.

[0279] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probabilityagainst the deposition of the deposited material 531, that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0280] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of at least one of: Ag, and Mg that is one of no more than about: 0.3, 0.2, 0.15, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, 0.001, 0.0008, 0.0005, 0.0003, and 0.0001.

[0281] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of a deposited material 531 of one of between about: 0.15-0.0001, 0.1-0.0003, 0.08-0.0005, 0.08-0.0008, 0.05-0.001, 0.03-0.0001, 0.03-0.0003, 0.03-0.0005, 0.03-0.0008, 0.03-0.001, 0.03-0.005, 0.03-0.008, 0.03-0.01, 0.02-0.0001, 0.02-0.0003, 0.02- 0.0005, 0.02-0.0008, 0.02-0.001, 0.02-0.005, 0.02-0.008, 0.02-0.01, 0.01-0.0001, 0.01- 0.0003, 0.01-0.0005, 0.01-0.0008, 0.01-0.001, 0.01-0.005, 0.01-0.008, 0.008-0.0001, 0.008- 0.0003, 0.008-0.0005, 0.008-0.0008, 0.008-0.001, 0.008-0.005, 0.005-0.0001, 0.005-0.0003, 0.005-0.0005, 0.005-0.0008, and 0.005-0.001.

[0282] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability against the deposition of a plurality of deposited materials 531 that is no more than a threshold value. In some non-limiting examples, such threshold value may be one of about: 0.3, 0.2, 0.18, 0.15, 0.13, 0.1, 0.08, 0.05, 0.03, 0.02, 0.01, 0.008, 0.005, 0.003, and 0.001.

[0283] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an initial sticking probability that isno more than such threshold value against the deposition of a plurality of deposited materials 531 selected from at least one of: Ag, Mg, Yb, Cd, and Zn. In some non-limiting examples, the patterning coating 110 may exhibit an initial sticking probability of no more than such threshold value against the deposition of a plurality of deposited materials 531 selected from at least one of: Ag, Mg, and Yb.

[0284] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may exhibit an initial sticking probability against the deposition of a first deposited material 531 of, including without limitation, below, a first threshold value, and an initial sticking probability against the deposition of a second deposited material 531 of, including without limitation, below, a second threshold value. In some non-limiting examples, the first deposited material 531 may be Ag, and the second deposited material 531 may be Mg. In some non-limiting examples, the first deposited material 531 may be Ag, and the second deposited material may be Yb. In some non-limiting examples, the first deposited material 531 may be Yb, and the second deposited material 531 may be Mg. In some non-limiting examples, the first threshold value may be at least that of the second threshold value.

[0285] In some non-limiting examples, there may be scenarios calling for providing a patterning coating 110 for causing formation of a discontinuous layer 160 of at least one particle structure 150, upon the patterning coating 110 being subjected to a vapor flux 532 of a deposited material 531. In some non-limiting examples, the patterning coating 110 may exhibit a substantially low initial sticking probability such that a closed coating 140 of the deposited material 531 may be formed in the second portion 102, which may be substantially devoid of the patterning coating 110, while the discontinuous layer 160 of at least one particle structure 150 having at least one characteristic may be formed in the first portion 101 on the patterning coating 110. In some non-limiting examples, there may be scenarios calling for formation of a discontinuous layer 160 of at least one particle structure 150 of a deposited material 531, which may be, in some non-limiting examples, of a metal (alloy), in the first portion 101, while depositing a closed coating 140 of the deposited material 531 having a thickness of, without limitation, one of no more than about: 100, 50, 25, and 15, nm, in the second portion 102. In some non-limiting examples, an amount ofthe deposited material 531 deposited as a discontinuous layer 160 of at least one particle structure 150 in the first portion 101 may correspond to one of between about: 1-50%, 2- 25%, 5-20%, and 7-10% of the amount of the deposited material 531 deposited as a closed coating 140 in the second portion 102, which in some non-limiting examples may correspond to a thickness of one of no more than about: 100, 75, 50, 25, and 15, nm.

[0286] In some non-limiting examples, there may be a positive correlation between the initial sticking probability of at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited material 531, and an average layer thickness of the deposited material 531 thereon.Transmittance

[0287] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a transmittance for EM radiation of at least a threshold transmittance value, after being subjected to a vapor flux 532 of the deposited material 531, including without limitation, Ag.

[0288] In some non-limiting examples, such transmittance may be measured after exposing the exposed layer surface 11 of at least one of: the patterning coating 110 and the patterning material 411, formed as a thin film, to a vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, under typical conditions that may be used for depositing an electrode of an opto-electronic device 200, which in some non-limiting examples, may be a cathode of an organic light-emitting diode (OLED) device 200.

[0289] In some non-limiting examples, the conditions for subjecting the exposed layer surface 11 to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may comprise: maintaining a vacuum pressure at a reference pressure, including withoutlimitation, of one of about: 10'4, and 10'5, Torr; the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being substantially consistent with a reference deposition rate, including without limitation, of about 1 angstrom (A) / sec, which in some non-limiting examples, may be monitored using a QCM; the vapor flux 532 of the deposited material 531 being directed toward the exposed layer surface 11 at an angle that is substantially close to normal to a plane of the exposed layer surface 11; the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg, until a reference average layer thickness, including without limitation, of about 15 nm, is reached, and upon such reference average layer thickness being attained, the exposed layer surface 11 not being further subjected to the vapor flux of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0290] In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be substantially at room temperature (e.g. about 25°C). In some non-limiting examples, the exposed layer surface 11 being subjected to the vapor flux 532 of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, may be positioned about 65 cm away from an evaporation source by which the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, is evaporated.

[0291] In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in the visible spectrum, which may be one of at least about: 460, 500, 550, and 600, nm. In some non-limiting examples, the threshold transmittance value may be measured at a wavelength in at least one of the: IR, and NIR, spectrum. In some non-limiting examples, the threshold transmittance value may be measured at a wavelengthof one of about: 700, 900, and 1,000, nm. In some non-limiting examples, the threshold transmittance value may be expressed as a percentage of incident EM power that may be transmitted through a sample. In some non-limiting examples, the threshold transmittance value may be one of at least about: 60%, 65%, 70%, 75%, 80%, 85%, and 90%.

[0292] It will be appreciated by a person having ordinary skill in the relevant art that high transmittance may generally indicate an absence of a closed coating 140 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg. On the other hand, low transmittance may generally indicate presence of a closed coating 140 of the deposited material 531, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, since metallic thin films, particularly when formed as a closed coating 140, may exhibit a high degree of absorption of EM radiation.

[0293] A series of samples was fabricated to measure the transmittance of an example material, as well as to visually observe whether a closed coating 140 of Ag was formed on the exposed layer surface 11 of such example material. Each sample was prepared by depositing, on a glass substrate 10, an approximately 50 nm thick coating of an example material, then subjecting the exposed layer surface 11 of the coating to a vapor flux 532 of Ag at a rate of about 1 A / sec until a reference layer thickness of about 15 nm was reached. Each sample was then visually analyzed and the transmittance through each sample was measured.

[0294] The molecular structures of the example materials used in the samples herein are set out in Table 1 below:Table 1

[0295] Those having ordinary skill in the relevant art will appreciate that samples having little to no deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg, present thereon may be substantially transparent, while samples with substantial amounts of at least one of: a metal, and an alloy, deposited thereon, including without limitation, as a closed coating 140, may in some non-limiting examples, exhibit a substantially reduced transmittance. Accordingly, the performance of various example coatings as a patterning coating 110 may be assessed by measuring transmittance through the samples, which may be inversely correlated to at least one of: an amount, and an average layer thickness, of the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, in the form of at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, being deposited thereon, since metallic thin films, includingwithout limitation, when formed as a closed coating 140, may exhibit a high degree of absorption of EM radiation.

[0296] The samples in which a substantially closed coating 140 of a deposited material 531, in the form of Ag, had formed were visually identified, and the presence of such closed coating 140 in these samples was further confirmed by measurement of transmittance therethrough, which showed transmittance of no more than about 50% at a wavelength of about 460 nm.

[0297] In addition, for samples in which the absence of formation of a closed coating 140 of a deposited material 531, in the form of Ag, was identified, the absence of such closed coating 140 in these samples was further confirmed by measurement of EM transmittance therethrough, which showed transmittance (of EM radiation at a wavelength of about 460 nm) of at least about 70%.

[0298] The results are summarized in Table 2 below:Table 2

[0299] In some non-limiting examples, it was found that the materials used in the first 7 samples (HT211 to EM-2) and EM-9 in Tables 1 and 2 may have reduced applicability in some scenarios for inhibiting the deposition of the deposited material 531 thereon, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0300] On the other hand, it was found that EM-3 to EM-8 may have applicability in some scenarios, to act as a patterning coating 110 for inhibiting the deposition of the deposited material 531 including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, thereon.Deposition Contrast

[0301] In some non-limiting examples, a material, including without limitation, a patterning material 411, that may function as an NIC for a given at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, may have a substantially high deposition contrast when deposited on a substrate 10.

[0302] In some non-limiting examples, if a substrate 10 tends to act as a nucleationpromoting coating (NPC) 720 (FIG. 7A), and a portion thereof is coated with a material, including without limitation, a patterning material 411, that may tend to function as an NIC against deposition of a deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag- containing materials, including without limitation, MgAg, a coated portion (first portion 101) and an uncoated portion (second portion 102) may tend to have different at least one of: initial sticking probabilities, and nucleation rates, such that the deposited material 531 deposited thereon may tend to have different average film thicknesses.

[0303] As used herein, a quotient of an average film thickness of the deposited material 531 deposited in the second portion 102 divided by the average film thickness of the deposited material in the first portion 101 in such scenario may be generally referred toas a deposition contrast. Thus, if the deposition contrast is substantially high, the average film thickness of the deposited material 531 in the second portion 102 may be substantially at least that of the average film thickness of the deposited material 531 in the first portion 101.

[0304] In some non-limiting examples, a material, including without limitation, a patterning material 411, that may function as an NIC for a given deposited material 531, may have a substantially high deposition contrast when deposited on a substrate 10.

[0305] In some non-limiting examples, there may be a negative correlation between the initial sticking probability of at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, against the deposition of the deposited material 531 and a deposition contrast thereof, that is, a low initial sticking probability may be highly correlated with a high deposition contrast.

[0306] In some non-limiting examples, if the deposition contrast is substantially high, there may be little to no deposited material 531 deposited in the first portion 101, when there is sufficient deposition of the deposited material 531 to form a closed coating 140 thereof in the second portion 102.

[0307] In some non-limiting examples, if the deposition contrast is substantially low, there may be a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531 deposited in the first portion 101, when there is sufficient deposition of the deposited material 531 to form a closed coating 140 in the second portion 102.

[0308] In some non-limiting examples, there may be scenarios calling for the formation of a discontinuous layer 160 of at least one particle structure 150 of the deposited material 531, in the first portion 101, when an average layer thickness of a closed coating 140 of the deposited material 531 in the second portion 102 is substantially small, including without limitation, one of no more than about: 100, 50, 25, and 15, nm, including without limitation, the formation of nanoparticles (NPs) in the first portion 101, where absorption of EM radiation by such NPs is called for, including without limitation, to protect an underlying layer 710 from EM radiation having a wavelength of no more than about 460 nm.

[0309] In some non-limiting examples, in such scenarios, there may be applicability for a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15.

[0310] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low deposition contrast against deposition of a deposited material 531, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, where the average layer thickness of the deposited material 531 in the first portion 101 is large, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.

[0311] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low deposition contrast against deposition of a deposited material 531, may have reduced applicability in some scenarios calling for substantially high deposition contrast, including without limitation, scenarios calling for at least one of a: substantial absence of a closed coating 140, and high density of, particle structures 150 in the first portion 101, including without limitation, when an average layer thickness of the deposited material 531 in the second portion 102 is large, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm, including without limitation, in some scenarios calling for the substantial absence of absorption of EM radiation in at least one of the visible spectrum and the NIR spectrum, including without limitation, scenarios calling for an increased transparency to EM radiation having a wavelength that is at least about 460 nm.

[0312] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low deposition contrast against the deposition of a deposited material 531, may have applicability in some scenarios calling for at least one of: a discontinuous layer 160 of, and a low density of, particle structures 150 of the deposited material 531 in the first portion 101, when an average layer thickness of a closed coating 140 of the deposited material 531 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm. In some non-limiting examples, a deposition contrast of one of between about: 2-100, 4-50, 5-20, and 10-15 may have applicability in some scenarios when an average layer thickness of the deposited material 531 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.

[0313] In some non-limiting examples, a material, including without limitation, a patterning material 411, may tend to have a substantially low deposition contrast if the initial sticking probability of such material against deposition of at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and MgAg, is substantially high.Surface Energy

[0314] A characteristic surface energy, as used herein, in some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material.

[0315] In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited (coated) in a thin film form.

[0316] Various methods and theories for determining the surface energy of a solid are known.

[0317] In some non-limiting examples, a surface energy may be calculated (derived) based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure the contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, a surface energy of a solid surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface.

[0318] In some non-limiting examples, the critical surface tension of a surface may be determined according to the Zisman method, as further detailed in W. A. Zisman, Advances in Chemistry 43 (1964), pp. 1-51.

[0319] In some non-limiting examples, a characteristic surface energy of a material, including without limitation, a patterning material 411, in a coating, including without limitation, a patterning coating 110, may be determined by depositing the material as a substantially pure coating (e.g. a coating formed by a substantially pure material) on a substrate 10 and measuring a contact angle thereof with an applicable series of probe liquids.

[0320] In some non-limiting examples, a Zisman plot may be used to determine a maximum value of surface tension that would result in complete wetting (i.e. a contact angle 0c of 0°) of the surface.

[0321] A material which has applicability for use in providing the patterning coating 110 may generally have a low surface energy when deposited as a thin film (coating) on a surface. In some non-limiting examples, a material with a low surface energy may exhibit low intermolecular forces.

[0322] Without wishing to be bound by any particular theory, it is now postulated that a material with a substantially high surface energy may have applicability at least in some applications that call for a high temperature reliability.

[0323] Without wishing to be bound by any particular theory, it has now been found that a patterning coating 110 comprising a material which, when deposited as a thin film, exhibits a substantially high surface energy, may, in some non-limiting examples, form a discontinuous layer 160 of at least one particle structure 150 of a deposited material 531 in the first portion 101, and a closed coating 140 of the deposited material 531 in the second portion 102, including without limitation, in cases where the thickness of the closed coating is, in some non-limiting examples, one of no more than about: 100, 75, 50, 25, and 15, nm.

[0324] In some non-limiting examples, a series of samples was fabricated to measure the critical surface tension of the surfaces formed by the various materials. The results of the measurement are summarized in Table 3:Table 3

[0325] Based on the foregoing measurement of the critical surface tension in Table 3 and the previous observation regarding one of: the presence, and absence, of a substantially closed coating 140 of a deposited material 531, in the form of Ag, it was found that materials that form substantially low surface energy surfaces when deposited as a coating, including without limitation, a patterning coating 110, which in some non-limiting examples, may be those having a critical surface tension of one of between about: 13-20, and 13-19, dynes / cm, may have applicability for forming the patterning coating 110 to inhibit deposition of a deposited material 531 thereon, including without limitation, at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg.

[0326] Without wishing to be bound by any particular theory, it may be postulated that materials that form a surface having a surface energy lower than, in some non-limiting examples, about 13 dynes / cm, may have reduced applicability as a patterning material 411 in some scenarios, as such materials may exhibit at least one of: substantially poor adhesion to layer(s) surrounding such materials, a low melting point, and a low sublimation temperature.

[0327] In some non-limiting examples, a material, including without limitation, a patterning material 411 that may tend to function as an NIC for a deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Mg, Ag, and Ag-containing materials, including without limitation, MgAg, may tend to exhibit a substantially low surface energy when deposited as a thin film (coating) on an exposed layer surface 11.

[0328] In some non-limiting examples, a material, including without limitation, a patterning material 411, may tend to exhibit a substantially low surface energy when deposited as a thin film (coating) on an exposed layer surface 11.

[0329] In some non-limiting examples, a material, including without limitation, a patterning material 411, with a substantially low surface energy may tend to exhibit substantially low inter-molecular forces.

[0330] In some non-limiting examples, there may be scenarios calling for a patterning material 411 that has a substantially low surface energy that is not unduly low.

[0331] In some non-limiting examples, a material, including without limitation, a patterning material 411, with a substantially high surface energy may have applicability for some scenarios to detect a film of such material using optical techniques.

[0332] Without wishing to be bound by any particular theory, it may be postulated that, in some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high surface energy may have applicability for some scenarios that call for substantially high temperature reliability.

[0333] In some non-limiting examples, a material, including without limitation, a patterning material 411, that may function as an NIC for at least one of a metal, and an alloy, including without limitation, at least one of Mg, Ag, and Ag-containing materials, including without limitation, MgAg, having a substantially high surface energy may have applicability in some scenarios calling for a discontinuous layer 160 of particle structures 150 of at least one of the metal, and the alloy, in the first portion 101, when an average layer thickness of a continuous coating 140 of at least one of the metal, and the alloy, in the second portion 102 is substantially low, including without limitation, one of no more than about: 100, 50, 25, and 15, nm.

[0334] In some non-limiting examples, a material, including without limitation, a patterning material 411, that may function as an NIC for a deposited material 531, including without limitation, at least one of a metal, and an alloy, including without limitation, at least one of Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, having a substantially low surface energy may have applicability in some scenarios calling for one of a discontinuous layer 160 of, and a low density of, particle structures 150 of the deposited material 531 in the first portion 101, when an average layer thickness of a closed coating 140 of the deposited material 531 in the second portion 102 is substantially high, including without limitation, one of at least about: 95, 45, 20, 10, and 8, nm.

[0335] In some non-limiting examples, the surface of at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, comprising the compounds described herein, may exhibit a surface energy of one of no more than about: 24, 22, 20, 18, 16, 15, 13, 12, and 11, dynes / cm.

[0336] In some non-limiting examples, the surface energy values in various nonlimiting examples herein may correspond to such values measured at around normal temperature and pressure (NTP), which may correspond to a temperature of 20°C, and an absolute pressure of 1 atm.

[0337] In some non-limiting examples, the surface energy may be one of at least about: 6, 7, and 8, dynes / cm.

[0338] In some non-limiting examples, the surface energy may be one of between about: 10-20, and 13-19, dynes / cm.TemperatureGlass Transition Temperature

[0339] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of: a film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a glass transition temperature that is one of: one of at least about: 300°C, 150°C, and 130°C, and one of no more than about: 30°C, 0°C, -30°C, and -50°C.Sublimation Temperature

[0340] In some non-limiting examples, a material, including without limitation, a patterning material 411, having substantially low inter-molecular forces may tend to exhibit a substantially low sublimation temperature.

[0341] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness in a deposited film of the material.

[0342] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a sublimation temperature that is one of no more than about:140°C, 120°C, 110°C, 100°C and 90°C, may tend to encounter constraints on at least one of: the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0343] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0344] In some non-limiting examples, the patterning material may have a sublimation temperature of one of between about: 100-320°C, 120-300°C, 140-280°C, and 150-250°C. In some non-limiting examples, such sublimation temperature may allow the patterning material 411 to be substantially readily deposited as a coating using PVD.

[0345] In some non-limiting examples, a material with substantially low intermolecular forces may exhibit a substantially low sublimation temperature.

[0346] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low sublimation temperature, may have reduced applicability for manufacturing processes that may call for substantially precise control of an average layer thickness of a closed coating 140 of the material.

[0347] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a sublimation temperature that is one of no more than about: 140°C, 120°C, 110°C, 100°C and 90°C, may tend to encounter constraints on at least one of: the deposition rate and the average layer thickness, of a film comprising such material that may be deposited using known deposition methods, including without limitation, vacuum thermal evaporation.

[0348] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high sublimation temperature may have applicability in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0349] The sublimation temperature of a material, including without limitation, a patterning material 411, may be determined using various methods apparent to those having ordinary skill in the relevant art, including without limitation, by heating the material in an evaporation source under a substantially high vacuum environment, in some non-limitingexamples, about 10'4Torr, and including without limitation, in a crucible and by determining a temperature that may be attained, to at least one of:• observe commencement of the deposition of the material onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible;• observe a specific deposition rate, in some non-limiting examples, 0.1 A / sec, onto an exposed layer surface 11 on a QCM mounted a fixed distance from the crucible; and• reach a threshold vapor pressure of the material, in some non-limiting examples, one of about: 10'4, and 10'5, Torr.

[0350] In some non-limiting examples, the QCM may be mounted about 65 cm away from the crucible for the purpose of determining the sublimation temperature.

[0351] In some non-limiting examples, the patterning material 411 may have a sublimation temperature of one of between about: 100-320°C, 100-300°C, 120-300°C, 100- 250°C, 140-280°C, 120-230°C, 130-220°C, 140-210°C, 140- 200°C, 150-250°C, and 140- 190°C.Melting Point

[0352] In some non-limiting examples, a material, including without limitation, a patterning material 411, with substantially low inter-molecular forces may tend to exhibit a substantially low melting point.

[0353] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low melting point may have reduced applicability in some scenarios calling for substantial temperature reliability for temperatures of one of no more than about: 60°C, 80°C, and 100°C, in some non-limiting examples, because of changes in physical properties of such material at operating temperatures that approach the melting point.

[0354] In some non-limiting examples, a material with a melting point of about 120°C may have increased applicability in some scenarios calling for substantially high temperature reliability, including without limitation, of at least about: 100 °C.

[0355] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially high melting point may have applicability in some scenarios calling for substantially high temperature reliability.

[0356] In some non-limiting examples, at least one of: the patterning coating 110 and the compound thereof may have a melting temperature that is one of at least about: 90°C, 100°C, 110°C, 120°C, 140°C, 150°C, and 180°C.Cohesion Energy

[0357] According to Young’s equation (Equation 13) the cohesion energy (fracture toughness / cohesion strength) of a material may tend to be proportional to its surface energy (cf. Young, Thomas (1805) “An essay on the cohesion of fluids”, Philosophical Transactions of the Royal Society of London, 95: 65-87).

[0358] According to Lindemann’s criterion, the cohesion energy of a material may tend to be proportional to its melting temperature (cf. Nanda, K.K., Sahu, S.N, and Behera, S.N (2002), “Liquid-drop model for the size-dependent melting of low-dimensional systems” Phys. Rev. A. 66 (1): 013208).

[0359] In some non-limiting examples, a material, including without limitation, a patterning material 411, having substantially low inter-molecular forces may tend to exhibit a substantially low cohesion energy.

[0360] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low cohesion energy may have reduced applicability in some scenarios that call for substantial fracture toughness, including without limitation, in a device 100 that may tend to undergo at least one of: sheer, and bending, stress during at least one of: manufacture, and use, as such material may tend to crack (fracture) in such scenarios. In some non-limiting examples, a material, including without limitation, a patterning material 411, having a cohesion energy of no more than about 30 dynes / cm may have reduced applicability in some scenarios in a device 100 manufactured on a flexible substrate 10.

[0361] In some non-limiting examples, a material, including without limitation, a patterning material 411, that has a substantially high cohesion energy, may have applicability in some scenarios calling for substantially high reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10.

[0362] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a surface energy that is substantially low but is not undulylow may have applicability in some scenarios that call for substantial reliability under at least one of: sheer, and bending, stress, including without limitation, a device 100 manufactured on a flexible substrate 10.Optical / Band Gap

[0363] In the present disclosure, a semiconductor material may be described as a material that generally exhibits a band gap. In some non-limiting examples, the band gap may be formed between a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO) of the semiconductor material. Semiconductor materials may thus tend to exhibit electrical conductivity that is substantially no more than that of a conductive material (including without limitation, at least one of: a metal, and an alloy), but that is substantially at least as great as an insulating material (including without limitation, glass). In some non-limiting examples, the semiconductor material may comprise an organic semiconductor material. In some non-limiting examples, the semiconductor material may comprise an inorganic semiconductor material.

[0364] In some non-limiting examples, an optical gap of a material, including without limitation, a patterning material 411, may tend to correspond to the H0M0-LUM0 gap of the material.

[0365] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially large / wide optical (H0M0-LUM0 gap) may tend to exhibit substantially weak, including without limitation, substantially no, photoluminescence in at least one of: the deep B(lue) region of the visible spectrum, the near UV spectrum, the visible spectrum, and the NIR spectrum.

[0366] In some non-limiting examples, a material having a substantially small H0M0-LUM0 gap may have applicability in some scenarios to detect a film of the material using optical techniques.

[0367] In some non-limiting examples, an optical gap of the patterning material 411 may be wider than a photon energy of the EM radiation emitted by the source, such that the patterning material 411 does not undergo photoexcitation when subjected to such EM radiation.Refractive Index and Extinction Coefficient

[0368] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a low refractive index.

[0369] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a refractive index for EM radiation at a wavelength of 550 nm that may be one of no more than about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.

[0370] In some non-limiting examples, the refractive index, of the patterning coating 110 may be no more than about 1.7. In some non-limiting examples, the refractive index of the patterning coating 110 may be one of no more than about: 1.6, 1.5, 1.4, and 1.3. In some non-limiting examples, the refractive index of the patterning coating 110 may be one of between about: 1.2-1.6, 1.2-1.5, and 1.25-1.45. As further described in various nonlimiting examples above, the patterning coating 110 exhibiting a substantially low refractive index may have application in some scenarios, to enhance at least one of: the optical properties, and performance, of the device 100, including without limitation, by enhancing outcoupling of EM radiation emitted by the opto-electronic device 200.

[0371] Without wishing to be bound by any particular theory, it has been observed that providing the patterning coating 110 having a substantially low refractive index may, at least in some devices 100, enhance transmission of external EM radiation through the second portion 102 thereof. In some non-limiting examples, devices 100 including an air gap therein, which may be arranged near to the patterning coating 110, may exhibit a substantially high transmittance when the patterning coating 110 has a substantially low refractive index relative to a similarly configured device 100 in which such low-index patterning coating 110 was not provided.

[0372] In some non-limiting examples, a series of samples was fabricated to measure the refractive index at a wavelength of 550 nm for the coatings formed by some of the various example materials. The results of the measurement are summarized in Table 4 below:Table 4

[0373] Based on the measurement of refractive index in Table 4, and the previous observation regarding one of: the presence, and absence, of a substantially closed coating 140 of Ag in Table 4, it was found that materials that form a low refractive index coating, including without limitation, be those having a refractive index of one of no more than about: 1.4 and 1.38, may have applicability in some scenarios for forming the patterning coating 110 to substantially inhibit deposition of a deposited material 531 thereon, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg.

[0374] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have a low refractive index.

[0375] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of thepatterning coating 110 within the device 100, may have a refractive index for EM radiation at a wavelength of 550 nm that may be one of no more than about: 1.55, 1.5, 1.45, 1.43, 1.4, 1.39, 1.37, 1.35, 1.32, and 1.3.

[0376] In some non-limiting examples, the patterning coating 110 may be at least one of: substantially transparent, and EM radiation-transmissive.

[0377] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under similar circumstances to the deposition of the patterning coating 110 within the device 100, may have an extinction coefficient that may be no more than about 0.01 for photons at a wavelength that is one of at least about: 600, 500, 460, 420, and 410, nm.

[0378] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may have an extinction coefficient that may be one of at least about: 0.05, 0.1, 0.2, and 0.5 for EM radiation at a wavelength that is one of no more than about: 400, 390, 380, and 370, nm.

[0379] In this way, at least one of the: patterning coating 110, and patterning material 411, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may absorb EM radiation in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that EM radiation in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.

[0380] In some non-limiting examples, the patterning coating 110 may exhibit an extinction coefficient of one of no more than about: 0.1, 0.08, 0.05, 0.03, and 0.01 in the visible light spectrum.Photoluminescence, Absorption and Other Optical Effects

[0381] In some non-limiting examples, photoluminescence of at least one of: a coating, and a material may be observed through a photoexcitation process. In aphotoexcitation process, at least one of: the coating, and the material, may be subjected to EM radiation emitted by a source, including without limitation, a UV lamp.

[0382] When the emitted EM radiation is absorbed by at least one of: the coating, and the material, the electrons thereof may be temporarily excited. Following excitation, at least one relaxation process may occur, including without limitation, at least one of: fluorescence and phosphorescence, in which EM radiation may be emitted from at least one of: the coating, and the material.

[0383] The EM radiation emitted from at least one of: the coating, and the material, during such process may be detected, for example, by a photodetector, to characterize the photoluminescence properties of at least one of: the coating, and the material.

[0384] As used herein, a wavelength of photoluminescence, in relation to at least one of: the coating, and the material, may generally refer to a wavelength of EM radiation emitted by such at least one of: the coating, and the material, as a result of relaxation of electrons from an excited state. As would be appreciated by a person having ordinary skill in the relevant art, a wavelength of light emitted by at least one of: the coating, and the material, as a result of the photoexcitation process may, in some non-limiting examples, be longer than a wavelength of radiation used to initiate photoexcitation. Photoluminescence may be detected using various techniques known in the art, including, without limitation, fluorescence microscopy.

[0385] In some non-limiting examples, the optical gap of the various coatings / materials may correspond to an energy gap of the coating / material from which EM radiation is one of: absorbed, and emitted, during the photoexcitation process.

[0386] In some non-limiting examples, photoluminescence may be detected by subjecting the coating / material to EM radiation having a wavelength corresponding to the UV spectrum, such as in some non-limiting examples, one of: UVA, and UVB. In some non-limiting examples, EM radiation for causing photoexcitation may have a wavelength of about 365 nm.

[0387] In some non-limiting examples, the patterning material 411 may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum.

[0388] In some non-limiting examples, the patterning material 411 may not exhibit photoluminescence upon being subjected to EM radiation having a wavelength of one of at least about: 300, 320, 350, and 365, nm.

[0389] As used herein, at least one of: the coating, and the material, that is photolumine scent, may be one that exhibits photoluminescence at a wavelength when irradiated with an excitation radiation at a certain wavelength. In some non-limiting examples, at least one of: the coating, and the material, that is photoluminescent, may exhibit photoluminescence at a wavelength that is at least about 365 nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy, upon being irradiated with an excitation radiation having a wavelength of 365 nm.

[0390] At least one of: the coating, and the material, that is photoluminescent, may be detected on a substrate 10 using standard optical techniques including without limitation, fluorescence microscopy, which may establish the presence of such at least one of the: coating, and material.

[0391] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, may exhibit photoluminescence, including without limitation, by comprising a material that exhibits photoluminescence.

[0392] In some non-limiting examples, the presence of such patterning coating 110 may be detected (observed) using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 110.

[0393] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, may exhibit photoluminescence at a wavelength corresponding to at least one of the: UV, and visible, spectrum, including without limitation, by comprising a material that exhibits photoluminescence. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the UV spectrum, including, without limitation, one of the: UVA, and UVB, spectrum. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to the visible spectrum. In some non-limiting examples, photoluminescence may occur at a wavelength (range) corresponding to one of: deep B(lue) and near UV.

[0394] In some non-limiting examples, at least one of the materials of the patterning coating 110 that may exhibit photoluminescence may comprise at least one of: a conjugated bond, an aryl moiety, a donor-acceptor group, and a heavy metal complex.

[0395] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, comprised of a material, including without limitation, a patterning material 411, having substantially weak to no photoluminescence (absorption) in a wavelength range of one of at least about: 365, and 460, nm, may tend to not act as one of: a photolumine scent, and an absorbing, coating and may have applicability in some scenarios calling for substantially high transparency in at least one of the: visible, and NIR, spectrum.

[0396] In some non-limiting examples, such material may tend to exhibit substantially low photoluminescence upon being subjected to EM radiation having a wavelength of about 365 nm, which is a wavelength of the radiation source frequently used in fluorescence microscopy. The presence of such materials, including without limitation, a patterning material 411, especially when deposited, in some non-limiting examples, as a thin film, may have reduced applicability in some scenarios calling for typical optical detection techniques, including without limitation, fluorescence microscopy. This may impose constraints in some scenarios in which such material may be selectively deposited, for example through an FMM, over part(s) of a substrate 10, as there may be some scenarios for determining, following the deposition of the material, the part(s) in which such materials are present.

[0397] In some non-limiting examples, a material with substantially low to no absorption at a wavelength that is one of at least about: 365, and 460, nm, may have applicability in some scenarios calling for substantially high transparency in at least one of the: visible, and NIR, spectrum.

[0398] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, in some non-limiting examples, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may not substantially attenuate EM radiation passing therethrough, in at least the visible spectrum.

[0399] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 withinthe device 100, may not substantially attenuate EM radiation passing therethrough, in at least one of: the IR spectrum, and the NIR spectrum.

[0400] In this way, at least one of the: patterning coating 110, and patterning material 411, when deposited as at least one of a: film, and coating, in a form, and under circumstances similar to the deposition of the patterning coating 110 within the device 100, may absorb EM radiation in the UVA spectrum incident upon the device 100, thereby reducing a likelihood that EM radiation in the UVA spectrum may impart constraints in terms of at least one of: device performance, device stability, device reliability, and device lifetime.

[0401] In some non-limiting examples, the patterning coating 110 may act as an optical coating.

[0402] In some non-limiting examples, the patterning coating 110 may modify at least one of: at least one property, and at least one characteristic, of EM radiation (including without limitation, in the form of photons) emitted by the device 100. In some non-limiting examples, the patterning coating 110 may exhibit a degree of haze, causing emitted EM radiation to be scattered. In some non-limiting examples, the patterning coating 110 may comprise a crystalline material for causing EM radiation transmitted therethrough to be scattered. Such scattering of EM radiation may facilitate enhancement of the outcoupling of EM radiation from the device 100 in some non-limiting examples. In some non-limiting examples, the patterning coating 110 may initially be deposited as a substantially noncrystalline, including without limitation, substantially amorphous, coating, whereupon, after deposition thereof, the patterning coating 110 may become crystallized and thereafter serve as an optical coupling.

[0403] In some non-limiting examples, the patterning material 411 may exhibit insignificant, including without limitation, no detectable, absorption when subjected to EM radiation having a wavelength of one of at least about: 300, 320, 350, and 365, nm.

[0404] In some non-limiting examples, the patterning coating 110 may not exhibit any substantial EM radiation absorption at any wavelength corresponding to the visible spectrum.Average Laver Thickness

[0405] In some non-limiting examples, an average layer thickness of the patterning coating 110 may be one of no more than about: 10, 8, 7, 6, and 5, nm.Weight

[0406] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be scenarios calling for, in at least some applications, the molecular weight of such compounds to be one of between about: 800-3,000, 900-2,000, 900-1,800, and 900- 1,600, g / mol.

[0407] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 411 may be no more than about 5,000 g / mol. In some nonlimiting examples, the molecular weight of the compound may be one of no more than about: 4,500, 4,000, 3,800, and 3,500, g / mol.

[0408] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 411 may be at least about 800 g / mol. In some non-limiting examples, the molecular weight of the compound may be one of at least about: 1,500, 1,700, 2,000, 2,200, and 2,500, g / mol.

[0409] In some non-limiting examples, the molecular weight of the compound of the at least one patterning material 411 may be one of between about: 800-3,000, 900-2,000, 900-1,800, and 900-1,600, g / mol.

[0410] In some non-limiting examples, a percentage of the molar weight of such compound, including without limitation, of the at least one patterning material 411, that may be attributable to the presence of F atoms, may be one of between about: 40-90%, 45- 85%, 50-80%, 55-75%, and 60-75%. In some non-limiting examples, F atoms may constitute a majority of the molar weight of such compound.Inter-Relationships Between Paterning Coating Attributes

[0411] Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting low initial sticking probability with respect to the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag-containing material, including without limitation, MgAg, may exhibit high transmittance. Without wishing to be bound by any particular theory, it may be postulated that exposed layer surfaces 11 exhibiting highsticking probability with respect to the deposited material 531, including without limitation, at least one of: a metal, and an alloy, including without limitation, Yb, Ag, Mg, and an Ag- containing material, including without limitation, MgAg, may exhibit low transmittance.

[0412] In some non-limiting examples, a material, including without limitation, a patterning material 411, may tend to have a substantially high initial sticking probability against deposition of a deposited material, including without limitation, at least one of: a metal, and an alloy, including without limitation, at least one of: Yb, Ag, Mg, and an Ag- containing material, including without limitation, MgAg, if the material has a substantially high surface energy.

[0413] In some non-limiting examples, a patterning material 411 that has a substantially low surface tension that is not unduly low, may have applicability in some scenarios calling for a substantially high melting point, including without limitation, between about 15-22 dynes / cm.

[0414] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a surface tension that is substantially low, but not unduly low, may have applicability in some scenarios that call for a substantially high sublimation temperature.

[0415] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, comprised of a material, including without limitation, a patterning material 411, having a substantially low surface energy and a substantially high sublimation temperature may have application in some scenarios calling for substantially high precision in the control of the average layer thickness of a film comprising such material.

[0416] Without wishing to be bound by any particular theory, it may be postulated that materials that form an exposed layer surface 11 having a surface energy of no more than, in some non-limiting examples, about 13 dynes / cm, may have reduced applicability as a patterning material 411 in some scenarios, as such materials may exhibit at least one of: substantially low adhesion to layer(s) surrounding such materials, a substantially low melting point, and a substantially low sublimation temperature.

[0417] In some non-limiting examples, a patterning coating 110 having a substantially low surface energy and a substantially high melting point may have applicability in some scenarios calling for high temperature reliability. In some nonlimiting examples, there may be challenges in achieving such a combination from a singlematerial given that in some non-limiting examples, a single material having a low surface energy may tend to exhibit a low melting point.

[0418] Without wishing to be bound by any particular theory, it may be postulated that such compounds, including without limitation, of at least one patterning material 411, may exhibit at least one property that may have applicability in some scenarios for forming at least one of a coating, and layer, having at least one of a substantially high melting point, in some non-limiting examples, of at least 100°C, a substantially low surface energy, and a substantially amorphous structure, when deposited, in some non-limiting examples, using vacuum-based thermal evaporation processes.

[0419] In some non-limiting examples, a coating, including without limitation, a patterning coating 110, having a substantially low surface energy, a substantially high cohesion energy, and a substantially high melting point may have applicability in some scenarios that call for substantially high reliability under various conditions. In some nonlimiting examples, there may be challenges in achieving such a combination from a single material, given that, in some non-limiting examples, a unitary material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy and a substantially low melting point.

[0420] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low surface energy and a substantially high cohesion energy may have applicability in some scenarios that call for substantially high reliability under at least one of sheer, and bending, stress. In some non-limiting examples, there may be challenges in achieving such a combination from a single material, given that, in some non-limiting examples, a thin film formed substantially of a single material having a substantially low surface energy may tend to exhibit a substantially low cohesion energy.

[0421] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low surface energy may tend to exhibit at least one of a substantially large, and substantially wide, optical gap. In some non-limiting examples, the optical gap of a material, including without limitation, a patterning material 411, may tend to correspond to the H0M0-LUM0 gap of the material.

[0422] In general, a material with a low surface energy may exhibit at least one of a large, and wide, optical gap which, in some non-limiting examples, may correspond to the H0M0-LUM0 gap of the material.

[0423] It has also now been found that a patterning coating 110 formed by a compound exhibiting a substantially low surface energy may also exhibit a substantially low refractive index.

[0424] In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, may exhibit a surface energy of no more than about 25 dynes / cm and a refractive index of no more than about 1.45. In some non-limiting examples, at least one of the: patterning coating 110, and patterning material 411, may comprise a material exhibiting a surface energy of no more than about 20 dynes / cm and a refractive index of no more than about 1.4.

[0425] In some non-limiting examples, a material, including without limitation, a patterning material 411, having a substantially low surface energy may have applicability in some scenarios calling for substantially weak to no, at least one of: photoluminescence, and absorption, in a wavelength range that is one of at least about: 365, and 460, nm.

[0426] In some non-limiting examples, a material, including without limitation, a patterning material 411, having at least one of a substantially: large, and wide, optical (and H0M0-LUM0) gap may tend to exhibit a substantially weak to no photoluminescence in at least one of the: deep B(lue) region of the visible, near UV, visible, and NIR, spectrum.

[0427] Without wishing to be bound by any particular theory, it may be postulated that, for compounds that are adapted to form surfaces with substantially low surface energy, there may be an aim, in at least some applications, for the molecular weight of such compounds to be one of between about: 1,500-5,000, 1,500-4,500, 1,700-4,500, 2,000- 4,000, 2,200-4,000, and 2,500-3,800, g / mol.

[0428] At least some materials with at least one of: one of a: large, and wide, optical, and H0M0-LUM0, gap, may exhibit substantially weak to no photoluminescence in at least one of the: visible (including without limitation, the deep B(lue) region thereof), and near UV, spectrum. In some non-limiting examples, a material with a substantially small H0M0-LUM0 gap may have applicability in applications to detect a film of the material using optical techniques. In some non-limiting examples, a material with a substantially high surface energy may have applicability for applications to detect of a film of the material using optical techniques.

[0429] In some non-limiting examples, a material having a substantially large HOMO-LUMO gap may have applicability in some scenarios calling for weak to no at least one of: photoluminescence, and absorption, in a wavelength range of one of at least about: 365, and 460, nm.Doping

[0430] In some non-limiting examples, the patterning coating 110 may exhibit, including without limitation, because of at least one of the: patterning material 411 used, and deposition environment, at least one nucleation site for the deposited material 531.

[0431] In some non-limiting examples, the patterning coating 110 may be doped, including without limitation, by at least one of: covering, and supplementing, with another material that may act as at least one of a: seed, and heterogeneity, to act as such a nucleation site for the deposited material 531. In some non-limiting examples, such other material may comprise an NPC 720 material. In some non-limiting examples, such other material may comprise an organic material, in some non-limiting examples, at least one of a: polycyclic aromatic compound, and material comprising a non-metallic element, including without limitation, at least one of: O, S, N, and C, whose presence might otherwise be a contaminant in at least one of the: source material, equipment used for deposition, and vacuum chamber environment. In some non-limiting examples, such other material may be deposited in a layer thickness that is a fraction of a monolayer, to avoid forming a closed coating 140 thereof. Rather, the monomers of such other material may tend to be spaced apart in the lateral aspect so as form discrete nucleation sites for the deposited material.Plurality of Patterning Materials

[0432] In some non-limiting examples, forming a patterning coating 110 of a single patterning material 411 against the deposition of a deposited material 531, including without limitation, at least one of a given: metal, and alloy, including without limitation, at least one of: Yb, Ag, Mg, and Ag-containing materials, including without limitation, MgAg, that satisfied constraints of at least one material property selected from at least one of: initial sticking probability, transmittance, deposition contrast, surface energy, glass transition temperature, melting point, sublimation temperature, evaporation temperature, cohesion energy, optical gap, photoluminescence, refractive index, extinction coefficient, absorption, other optical effect, average layer thickness, molecular weight, and composition,for a given scenario, may impose challenges, given the substantially complex interrelationships between the various material properties.

[0433] In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials. In some non-limiting examples, the patterning coating 110 may comprise a first material and a second material.

[0434] In some non-limiting examples, at least one of the plurality of materials of the patterning coating 110 may serve as an NIC when deposited as a thin film.

[0435] In some non-limiting examples, at least one of the plurality of materials of the patterning coating 110 may serve as an NIC when deposited as a thin film, and another material thereof may form an NPC 720 when deposited as a thin film. In some non-limiting examples, the first material may form an NPC 720 when deposited as a thin film, and the second material may form an NIC when deposited as a thin film. In some non-limiting examples, the presence of the first material in the patterning coating 110 may result in an increased initial sticking probability thereof compared to cases in which the patterning coating 110 is formed of the second material and is substantially devoid of the first material.

[0436] In some non-limiting examples, at least one of the materials of the patterning coating 110 may be adapted to form a surface having a low surface energy when deposited as a thin film. In some non-limiting examples, the first material, when deposited as a thin film, may be adapted to form a surface having a lower surface energy than a surface provided by a thin film comprising the second material.

[0437] In some non-limiting examples, the patterning coating 110 may exhibit photoluminescence, including without limitation, by comprising a material which exhibits photoluminescence.

[0438] In some non-limiting examples, the first material may exhibit photoluminescence at a wavelength corresponding to the visible spectrum, and the second material may not exhibit substantial photoluminescence at any wavelength corresponding to the visible spectrum.

[0439] In some non-limiting examples, the second material may not substantially exhibit photoluminescence at any wavelength corresponding to the visible spectrum. In some non-limiting examples, the second material may not exhibit photoluminescence upon being subjected to EM radiation having a wavelength of one of at least about: 300, 320,350, and 365, nm. In some non-limiting examples, the second material may exhibit insignificant to no detectable absorption when subjected to such EM radiation.

[0440] In some non-limiting examples, the second optical gap of the second material may be wider than the photon energy of the EM radiation emitted by the source, such that the second material does not undergo photoexcitation when subjected to such EM radiation. However, in some non-limiting examples, the patterning coating 110 comprising such second material may nevertheless exhibit photoluminescence upon being subjected to EM radiation due to the first material exhibiting photoluminescence. In some non-limiting examples, the presence of the patterning coating 110 may be detected using routine characterization techniques such as fluorescence microscopy upon deposition of the patterning coating 110.

[0441] In some non-limiting examples, the first material may have a first optical gap, and the second material may have a second optical gap. In some non-limiting examples, the second optical gap may be at least that of the first optical gap. In some nonlimiting examples, a difference between the first optical gap and the second optical gap may be one of at least about: 0.3, 0.5, 0.7, 1, 1.3, 1.5, 1.7, 2, 2.5, and 3, eV.

[0442] In some non-limiting examples, the first optical gap may be one of no more than about: 4.1, 3.5, and 3.4, eV. In some non-limiting examples, the second optical gap may be one of at least about: 3.4, 3.5, 4.1, 5, and 6.2, eV.

[0443] In some non-limiting examples, at least one of the: first, and second, optical gap, may correspond to the H0M0-LUM0 gap.

[0444] In some non-limiting examples, an optical gap of at least one of: the various coatings, and materials, including without limitation, at least one of the: first, and second, optical gap, may correspond to an energy gap of at least one of the: coating, and material, from which EM radiation is at least one of: absorbed, and emitted, during the photoexcitation process.

[0445] In some non-limiting examples, a concentration, including without limitation by weight, of the first material in the patterning coating 110 may be no more than that of the second material in the patterning coating 110. In some non-limiting examples, the patterning coating 110 may comprise one of at least about: 0.1 0.2, 0.5, 0.8, 1, 3, 5, 8, 10, 15, and 20, wt.%, of the first material. In some non-limiting examples, the patterningcoating 110 may comprise one of no more than about: 50, 40, 30, 25, 20, 15, 10, 8, 5, 3, and 1, wt.%, of the first material. In some non-limiting examples, a remainder of the patterning coating 110 may be substantially comprised of the second material. In some non-limiting examples, the patterning coating 110 may comprise additional materials, including without limitation, at least one of a: third, and fourth, material.

[0446] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first and the second, material, may comprise at least one of: F, and Si. In some non-limiting examples, at least one of the: first, and second, material, may comprise at least one of: F, and Si. In some non-limiting examples, the first material may comprise at least one of: F, and Si, and the second material may comprise at least one of: F, and Si. In some non-limiting examples, the first material and the second material both may comprise F. In some non-limiting examples, the first material and the second material both may comprise Si. In some non-limiting examples, each of the: first and second, material may comprise at least one of: F, and Si.

[0447] In some non-limiting examples, at least one of the: first and second, material, may comprise both F and Si. In some non-limiting examples, one of the: first and second, material, may not comprise at least one of: F, and Si. In some non-limiting examples, the second material may comprise at least one of: F, and Si, and the first material may not comprise at least one of: F, and Si.

[0448] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a sp2C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a sp3C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and a sp3C, and at least one of the other materials of the patterning coating 110 may comprise a sp2C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and a sp3C wherein all F bonded to a C may be bonded to a sp3C, and at least one of the other materials of the patterning coating110 may comprise a sp2C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and a sp3C wherein all F bonded to C may be bonded to an sp3C, and at least one of the other materials of the patterning coating 110 may comprise a sp2C and may not comprise F. In some non-limiting examples, in any of the foregoing non-limiting examples, “at least one of the materials of the patterning coating 110” may correspond to the second material, and the “at least one of the other materials of the patterning coating 110” may correspond to the first material.

[0449] As would be appreciated by those having ordinary skill in the relevant art, the presence of materials in a coating which comprises at least one of: F, sp2C, sp3C, an aromatic hydrocarbon moiety, other functional groups, and other moieties, may be detected using various methods known in the art, including in some non-limiting examples, X-ray Photoelectron Spectroscopy (XPS).

[0450] In some non-limiting examples, at least one of the materials of the patterning coating 110, which in some non-limiting examples may be at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise an aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise an aromatic hydrocarbon moiety and may not comprise F. In some non-limiting examples, the aromatic hydrocarbon moiety may include at least one of: a substituted polycyclic aromatic hydrocarbon, an unsubstituted polycyclic aromatic hydrocarbon, a substituted phenyl, and an unsubstituted phenyl, moiety.

[0451] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may not comprise F.

[0452] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the materials of the patterning coating 110 may not comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterning coating 110 may comprise a polycyclic aromatic hydrocarbon moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and may not comprise a polycyclic aromatic hydrocarbon moiety, and at least one of the other materials of the patterningcoating 110 may comprise a polycyclic aromatic hydrocarbon moiety and may not comprise at least one of a: fluorocarbon, and siloxane, moiety.

[0453] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F, and at least one of the materials of the patterning coating 110 may not comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise F and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety and may not comprise F.

[0454] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some nonlimiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and at least one of the materials of the patterning coating 110 may not comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety and may not comprise a phenyl moiety, and at least one of the other materials of the patterning coating 110 may comprise a phenyl moiety. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety and may not comprise a phenyl moiety, and at least one of the othermaterials of the patterning coating 110 may comprise a phenyl moiety and may not comprise either of a: fluorocarbon, and siloxane, moiety.

[0455] In general, at least one of the: molecular structures, and molecular compositions, of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be different. In some non-limiting examples, the materials may be selected such that they possess at least one property which is one of substantially: similar to, and different from, one another, including without limitation, at least one of: at least one of a: molecular structure of a monomer, monomer backbone, and functional group; presence of a element in common; similarity in molecular structure; characteristic surface energy; refractive index; molecular weight; and thermal property, including without limitation, at least one of a: melting, sublimation, glass transition, and thermal decomposition, temperature.

[0456] A characteristic surface energy, as used herein, in some non-limiting examples, with respect to a material, may generally refer to a surface energy determined from such material. In some non-limiting examples, a characteristic surface energy may be measured from a surface formed by the material deposited in a thin film form. Various methods and theories for determining the surface energy of a solid are known. In some nonlimiting examples, a surface energy may be determined based on a series of contact angle measurements, in which various liquids may be brought into contact with a surface of a solid to measure a contact angle between the liquid-vapor interface and the surface. In some non-limiting examples, a surface energy of a solid surface may be equal to the surface tension of a liquid with the highest surface tension that completely wets the surface. In some non-limiting examples, a Zisman plot may be used to determine a highest surface tension value that would result in complete wetting (i.e. contact angle of 0°) of the surface.

[0457] In some non-limiting examples, at least one of the: first, and second, material, of the patterning coating 110 may be an oligomer.

[0458] In some non-limiting examples, the first material may comprise a first oligomer, and the second material may comprise a second oligomer. Each of the first oligomer and the second oligomer may comprise a plurality of monomers.

[0459] In some non-limiting examples, at least a fragment of the molecular structure of the at least one of the materials of the patterning coating 110, including withoutlimitation, at least one of the: first, and second, material, may be represented by Formula (I):(Mori)n (I) where:Mon represents a monomer, and n is an integer of at least 2.

[0460] In some non-limiting examples, n may be an integer of one of between about: 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7.

[0461] In some non-limiting examples, the molecular structure of the first material and the second material of the patterning coating 110 may each be independently represented by Formula (I). In some non-limiting examples, at least one of: the monomer, and / / , of the first material may be different from that of the second material. In some nonlimiting examples, n of the first material may be the same as n of the second material. In some non-limiting examples, n of the first material may be different from n of the second material. In some non-limiting examples, the first material and the second material may be oligomers.

[0462] In some non-limiting examples, the monomer may comprise at least one of: F, and Si.

[0463] In some non-limiting examples, the monomer may comprise a functional group. In some non-limiting examples, at least one functional group of the monomer may have a low surface tension. In some non-limiting examples, at least one functional group of the monomer may comprise at least one of: F, and Si. Non-limiting examples of such functional group include at least one of: a fluorocarbon group, and a siloxane group. In some non-limiting examples, the monomer may comprise a silsesquioxane group.

[0464] While some non-limiting examples have been described herein with reference to a first, and a second, material, it will be appreciated that the patterning coating may further include at least one additional material, and descriptions regarding at least one of the: molecular structures, and properties, of at least one of the: first material, second material, first oligomer, and second oligomer, may be applicable with respect to additional materials which may be contained in the patterning coating 110.

[0465] The surface tension attributable to a fragment of a molecular structure, including without limitation, at least one of a: monomer, monomer backbone unit, linker, and functional group, may be determined using various known methods in the art, including without limitation, the use of a Parachor, such as may be further described, in some nonlimiting examples, in “Conception and Significance of the Parachor”, Nature 196: 890-891. In some non-limiting examples, at least one functional group of the monomer may have a surface tension of one of no more than about: 25, 21, 20, 19, 18, 17, 16, 15, 14 m, 13 , 12, 11, and 10, dynes / cm.

[0466] In some non-limiting examples, the monomer may comprise at least one of a: CF2, and CF2H, moiety. In some non-limiting examples, the monomer may comprise at least one of a: CF2, and CF3, moiety. In some non-limiting examples, the monomer may comprise a CH2CF3 moiety. In some non-limiting examples, the monomer may comprise at least one of: C, and O. In some non-limiting examples, the monomer may comprise a fluorocarbon monomer. In some non-limiting examples, the monomer may comprise at least one of a: vinyl fluoride, vinylidene fluoride, tetrafluoroethylene, chlorotrifluoroethylene, hexafluoropropylene, and fluorinated 1,3-dioxole, moiety.

[0467] In some non-limiting examples, the monomer may comprise a monomer backbone and a functional group. In some non-limiting examples, the functional group may be bonded, one of: directly, and via a linker group, to the monomer backbone. In some nonlimiting examples, the monomer may comprise the linker group, and the linker group may be bonded to the monomer backbone and to the functional group. In some non-limiting examples, the monomer may comprise a plurality of functional groups, which may be one of: the same, and different, from one another. In such examples, each functional group may be bonded, one of: directly, and via a linker group, to the monomer backbone. In some nonlimiting examples, where a plurality of functional groups is present, a plurality of linker groups may also be present.

[0468] In some non-limiting examples, the molecular structure of at least one of the materials of the patterning coating 110, which may be at least one of the: first, and second, material, may comprise a plurality of different monomers. In some non-limiting examples, such molecular structure may comprise monomer species that have different at least one of: molecular composition, and molecular structure. Non-limiting examples of such molecular structure include those represented by Formulae (II) and (III):(MonA)k(MonB)m(II)(MonA)k(MonB)m(Monc)o(III) where:Mon Morfl, and Monceach represent a monomer specie, and k, m, and o each represent an integer of at least 2.

[0469] In some non-limiting examples, k, m, and o each represent an integer of one of between about: 2-100, 2-50, 3-20, 3-15, 3-10, and 3-7. Those having ordinary skill in the relevant art will appreciate that various non-limiting examples and descriptions regarding monomer, Mon, may be applicable with respect to each of Mon Morfl, and Monc.

[0470] In some non-limiting examples, the monomer may be represented by Formula (IV):M-(L-Rx)y (IV) where:AT represents the monomer backbone unit,L represents the linker group,R represents the functional group, x is an integer between 1-4, and y is an integer between 1-3.

[0471] In some non-limiting examples, the linker group may be represented by at least one of: a single bond, O, N, NH, C, CH, CH2, and S.

[0472] Various non-limiting examples of the functional group which have been described herein may apply with respect to R of Formula (IV). In some non-limiting examples, the functional group R may comprise an oligomer unit, and the oligomer unit may further comprise a plurality of functional group monomer units. In some non-limiting examples, a functional group monomer unit may be at least one of: CH2, and CF2. In some non-limiting examples, a functional group may comprise a CH2CF3 moiety. In some nonlimiting examples, such functional group monomer units may be bonded together to form at least one of: an alkyl, and a fluoroalkyl, oligomer unit. In some non-limiting examples, the oligomer unit may further comprise a functional group terminal unit. In some non-limitingexamples, the functional group terminal unit may be arranged at a terminal end of the oligomer unit and bonded to a functional group monomer unit. In some non-limiting examples, the terminal end at which the functional group terminal unit may be arranged may correspond to a fragment of the functional group that may be distal to the monomer backbone unit. In some non-limiting examples, the functional group terminal unit may comprise at least one of: CF2H, and CF3.

[0473] In some non-limiting examples, the monomer backbone unit M may have a high surface tension. In some non-limiting examples, the monomer backbone unit may have a surface tension that is at least that of at least one of the functional group(s) R bonded thereto. In some non-limiting examples, the monomer backbone unit may have a surface tension that is at least that of any functional group R bonded thereto.

[0474] In some non-limiting examples, the monomer backbone unit may have a surface tension of one of at least about: 25, 30, 40, 50, 75, 100, 150, 200, 250, 500, 1,000, 1,500, and 2,000, dynes / cm.

[0475] In some non-limiting examples, the monomer backbone unit may comprise phosphorus (P) and N, including without limitation, a phosphazene, in which there is a double bond between P and N and may be represented as at least one of: “NP” and “N=P”. In some non-limiting examples, the monomer backbone unit may comprise Si and O, including without limitation, silsesquioxane, which may be represented as SiO3 / 2.

[0476] In some non-limiting examples, at least a part of the molecular structure of the at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, is represented by Formula (V):(NP-(L-Rx)y)n (V) where:NP represents the phosphazene monomer backbone unit,L represents the linker group,R represents the functional group, x is an integer between 1-4, y is an integer between 1-3, andn is an integer of at least 2.

[0477] In some non-limiting examples, the molecular structure of at least one of the: first, and second, material, may be represented by Formula (V). In some non-limiting examples, at least one of the: first, and second, material, may be a cyclophosphazene. In some non-limiting examples, the molecular structure of the cyclophosphazene may be represented by Formula (V).

[0478] In some non-limiting examples, L may represent oxygen (O), x may be 1, and R may represent a fluoroalkyl group. In some non-limiting examples, at least a fragment of the molecular structure of the at least one material of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be represented by Formula (VI):(NP(ORf)2)n (VI) where:^ represents the fluoroalkyl group, and n is an integer between 3-7.

[0479] In some non-limiting examples, the fluoroalkyl group may comprise at least one of a: CF2, CF2H, CH2CF3, and CF3, group. In some non-limiting examples, the fluoroalkyl group may be represented by Formula (VII):where: p is an integer between 1-5; q is an integer between 6-20; andZ represents one of: hydrogen, and F.

[0480] In some non-limiting examples, p may be 1.

[0481] In some non-limiting examples, the fluoroalkyl group Rf in Formula (VI) may be represented by Formula (VII).

[0482] In some non-limiting examples, at least a fragment of the molecular structure of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be represented by Formula (VIII):(SiO3 / 2-(L-R))n(VIII) where:L represents the linker group,R represents the functional group, and n is an integer between 6-12.

[0483] In some non-limiting examples, L may represent the presence of at least one of: a single bond, O, substituted alkyl, and unsubstituted alkyl. In some non-limiting examples, n may be one of: 8, 10, and 12. In some non-limiting examples R may comprise a functional group with low surface tension. In some non-limiting examples, R may comprise at least one of: an F-containing, and a Si-containing, group. In some non-limiting examples, R may comprise at least one of a: fluorocarbon, and siloxane-containing, group. In some non-limiting examples, R may comprise at least one of a: CF2, and CF2H, group. In some non-limiting examples, R may comprise at least one of a: CF2, and CF3, group. In some nonlimiting examples, R may comprise a CH2CF3 group. In some non-limiting examples, the material represented by Formula (VIII) may be a poly octahedral silsesqui oxane.

[0484] In some non-limiting examples, at least a fragment of the molecular structure of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be represented by Formula (IX):(SiO3 / 2-Rf)n (IX) where: n is an integer between 6-12, and^ represents a fluoroalkyl group.

[0485] In some non-limiting examples n may be one of: 8, 10, and 12. In some nonlimiting examples, ’ / may comprise a functional group with low surface tension. In some non-limiting examples, ’ / may comprise at least one of: a CF2 moiety, and a CF2H moiety. In some non-limiting examples, A’ / may comprise at least one of: a CF2, and a CF3 moiety.In some non-limiting examples, ’ / may comprise a CH2CF3 moiety. In some non-limiting examples, the material represented by Formula (IX) may be a polyoctahedral silsesquioxane.

[0486] In some non-limiting examples, the fluoroalkyl group, Rf in Formula (IX) may be represented by Formula (VII).

[0487] In some non-limiting examples, at least a fragment of the molecular structure of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be represented by Formula (X):(SiO3 / 2-(CH2)x(CF3))n (X) where: x is an integer between 1-5, and n is an integer between 6-12.

[0488] In some non-limiting examples, n may be one of: 8, 10, and 12.

[0489] In some non-limiting examples, the compound represented by Formula (X) may be a polyoctahedral silsesquioxane.

[0490] In some non-limiting examples, at least one of: the functional group R, and the fluoroalkyl group Rf, may be selected independently upon each occurrence of such group in any of the foregoing formulae. Those having ordinary skill in the relevant art will appreciate that any of the foregoing formulae may represent a sub-structure of the compound, and at least one of additional: groups, and moi eties, may be present, which are not explicitly shown in the above formulae. Those having ordinary skill in the relevant art will appreciate that various formulae provided in the present application may represent at least one of: linear, branched, cyclic, cyclo-linear, and cross-linked, structures.

[0491] In some non-limiting examples, the patterning coating 110 may comprise at least one material represented by at least one of the following Formulae: (I), (II), (III), (IV), (V), (VI), (VIII), (IX), and (X), and at least one material exhibiting at least one of the following characteristics: includes an aromatic hydrocarbon moiety, includes an sp2carbon, includes a phenyl moiety, has a characteristic surface energy of at least about 20 dynes / cm, and exhibits photoluminescence, including without limitation, exhibitingphotoluminescence at a wavelength of at least about 365 nm upon being irradiated by an excitation radiation having a wavelength of about 365 nm.

[0492] In some non-limiting examples, the patterning coating may comprise a third material that is different from the first material and the second material. In some nonlimiting examples, the third material may comprise a monomer in common with at least one of the: first, and second, material.

[0493] In some non-limiting examples, a difference in the sublimation temperature of the plurality of materials of the patterning coating 110, including, without limitation, a difference between the first material and the second material, may be one of no more than about: 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of: F, and Si, and the sublimation temperatures of the materials of the patterning coating 110 may differ by no more than one of about: 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C. In some nonlimiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and the sublimation temperatures of the materials of the patterning coating 110 may differ by one of no more than about: 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C.

[0494] In some non-limiting examples, a difference in a melting temperature of the plurality of materials of the patterning coating 110, including, without limitation, a difference between the first, and the second, NIC material, may be one of no more than about: 5°C, 10°C, 15°C, 20°C, 30°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first, and the second, material, may comprise at least one of: F, and Si, and the melting temperatures of the materials of the patterning coating 110 may differ by one of no more than about: 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first, and the second, material, may comprise at least one of a: fluorocarbon, and siloxane, moiety, and the melting temperatures of the materials of the patterning coating 110 may differ by one of no more than about: 5°C, 10°C, 15°C, 20°C, 25°C, 40°C, and 50°C.

[0495] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may have a low characteristic surface energy. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the first, and the second, material, may have a low characteristic surface energy, and at least one of the materials of the patterning coating 110 may comprise at least one of: F, and Si. In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may have a low characteristic surface energy, may comprise at least one of: F, and Si, and at least one other material of the patterning coating 110 may have a high characteristic surface energy. In some non-limiting examples, the presence of F and Si may be accounted for by the presence of a fluorocarbon, and a siloxane, moiety, respectively. In some non-limiting examples, at least one of the materials, including without limitation, the second material, may have a low characteristic surface energy of one of between about: 10-20, 12-20, 15-20, and 17-19, dynes / cm, and another material, including without limitation, the first material, may have a high characteristic surface energy of one of between about: 20-100, 20-50, and 25-45, dynes / cm. In some non-limiting examples, at least one of the materials may comprise at least one of: F, and Si. In some non-limiting examples, the second material may comprise at least one of: F, and Si.

[0496] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the second material, may have a low characteristic surface energy of no more than about 20 dynes / cm and may comprise at least one of: at least one of: F, and Si, and another material, including without limitation, the first material, may have a characteristic surface energy of at least about 20 dynes / cm.

[0497] In some non-limiting examples, at least one of the materials of the patterning coating 110, including without limitation, the second material, may have a low characteristic surface energy of no more than about 20 dynes / cm and may comprise at least one of a: fluorocarbon, and siloxane, moiety, and another material of the patterning coating 110, including without limitation, the first material, may have a characteristic surface energy of at least about 20 dynes / cm.

[0498] In some non-limiting examples, the surface energy of each of the at least two materials of the patterning coating 110, including, without limitation, those of the firstmaterial and the second material, is one of no more about: 25, 21, 20, 19, 18, 17, 16 , 15, 14, 13 m, 12, 11, and 10, dynes / cm.

[0499] In some non-limiting examples, a refractive index at a wavelength at least one of: 500, and 460, nm, of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of no more than about: 1.5, 1.45, 1.44, 1.43, 1.42, and 1.41. In some non-limiting examples, the patterning coating 110 may comprise at least one material that exhibits photoluminescence, and the patterning coating 110 may have a refractive index, at a wavelength of at least one of: 500, and 460, nm, of one of no more than about: 1.5, 1.45, 1.44, 1.43, 1.42, and 1.41.

[0500] In some non-limiting examples, a molecular weight of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of at least about: 750, 1,000, 1,500, 2,000, 2,500, and 3,000, g / mol.

[0501] In some non-limiting examples, a molecular weight of at least one of the materials of the patterning coating 110, including without limitation, at least one of the: first, and second, material, may be one of no more than about: 10,000, 7,500, and 5,000, g / mol.

[0502] In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials exhibiting similar thermal properties, wherein at least one of the materials may exhibit photoluminescence. In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials with similar thermal properties, wherein at least one of the materials may photoluminescence, and wherein at least one of the materials, may comprise at least one of: F, and Si. In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials with similar thermal properties, including without limitation, at least one of: a melting temperature, and a sublimation temperature, of the materials, wherein at least one of the materials may exhibit photoluminescence at a wavelength of at least about 365 nm when excited by a radiation having an excitation wavelength of about 365 nm, and wherein at least one of the materials may comprise at least one of: F, and Si.

[0503] In some non-limiting examples, the patterning coating 110 may comprise a plurality of having at least one of: at least one element in common, and at least one substructure in common, wherein at least one of the materials may exhibit photoluminescence. In some non-limiting examples, at least one of the materials may comprise F and Si. In some non-limiting examples, the patterning coating 110 may comprise a plurality of materials with similar thermal properties, wherein at least one of the materials may exhibit photoluminescence at a wavelength that is at least about 365 nm when excited by a radiation having an excitation wavelength of about 365 nm, and wherein at least one of the materials may comprise at least one of: F, and Si. In some non-limiting examples, the at least one element in common may comprise at least one of: F, and Si. In some non-limiting examples, the at least one sub-structure in common may comprise at least one of: fluorocarbon, fluoroalkyl, and siloxyl.

[0504] In some non-limiting examples, a method for manufacturing a layered semiconductor device 100, including without limitation, an opto-electronic device 200, may comprise actions of: depositing a patterning coating on a first exposed layer surface 11 of the device 100 in a first portion 101 of a lateral aspect thereof; and depositing a deposited material 531 on a second exposed layer surface 11 of the device 100 in a second portion 102 of the lateral aspect thereof. An initial sticking probability against deposition of the deposited material 531 onto an exposed layer surface 11 of the patterning coating 110 in the first portion 101, may be substantially less than the initial sticking probability against deposition of the deposited material 531 onto an exposed layer surface 11 in the second portion 102, such that the exposed layer surface 11 of the patterning coating 110 in the first portion 101 may be substantially devoid of a closed coating 140 of the deposited material 531. The patterning coating 110 deposited on the first exposed layer surface 11 of the device 100 may comprises a first material and a second material.

[0505] In some non-limiting examples, depositing the patterning coating 110 on the first exposed layer surface 11 of the device 100 may comprise providing a mixture comprising a plurality of materials, and causing the mixture to be deposited onto the first exposed layer surface 11 of the device 100 to form the patterning coating 110 thereon. In some non-limiting examples, the mixture may comprise the first material and the second material. In some non-limiting examples, the first material and the second material mayboth be deposited onto the first exposed layer surface 11 to form the patterning coating 110 thereon.

[0506] In some non-limiting examples, the mixture comprising the plurality of materials may be deposited onto the first exposed layer surface 11 of the device 100 by a PVD process, including without limitation, thermal evaporation. In some non-limiting examples, the patterning coating 110 may be formed by evaporating the mixture from a single evaporation source and causing the mixture to be deposited on the first exposed layer surface 11 of the device 100. In some non-limiting examples, the mixture comprising, in some non-limiting examples, the first, and the second, material, may be placed in a single evaporation source (crucible) to be heated under vacuum. Once the evaporation temperature of the materials is reached, a vapor flux generated therefrom may be directed towards the first exposed layer surface 11 of the device 100 to cause the deposition of the patterning coating 110 thereon.

[0507] In some non-limiting examples, the patterning coating 110 may be deposited by co-evaporation of the first material and the second material. In some non-limiting examples, the first material may be evaporated from a first evaporation source, and the second material may be concurrently evaporated from a second evaporation source such that the mixture may be formed in the vapor phase and may be co-deposited onto the first exposed layer surface 11 to provide the patterning coating 110 thereon.

[0508] In order to evaluate properties of certain example patterning coatings 110 comprising at least two materials, a series of samples were fabricated by depositing, in vacuo, an approximately 20 nm thick layer of an organic material that may be used as an HTL material, followed by depositing, over the organic material layer, a nucleation modifying coating having varying compositions as summarized in Table 5 below.Table 5

[0509] In the present example, the patterning material was selected such that, for example when deposited as a thin film, the patterning material exhibits a low initial sticking probability against deposition of the deposited material(s) 531, including without limitation, at least one of: Ag, and Yb.

[0510] In the present example, PL Material 1 and PL Material 2 were selected such that, in some non-limiting examples, when deposited as a thin film, each of PL Material 1 and PL Material 2 may exhibit photoluminescence detectable by standard optical measurement techniques including without limitation, fluorescence microscopy.

[0511] In Table 5, Sample l is a comparison sample in which the nucleation modifying coating was provided by depositing the Patterning Material. Sample 2 is an example sample in which the nucleation modifying coating was provided by co-depositing the Patterning Material and PL Material 1 together to form a coating comprising PL Material 1 in a concentration of 0.5 vol.%. Sample 3 is an example sample in which the nucleation modifying coating was provided by co-depositing the Patterning Material and PL Material 2 to form a coating comprising PL Material 2 in a concentration of 0.5 vol.%. Sample 4 is a comparison sample in which the nucleation modifying coating was provided by depositing PL Material 1. Sample 5 is a comparison sample in which the nucleation modifying coating was provided by depositing PL Material 2. Sample 6 is a comparison sample in which no nucleation modifying coating was provided over the organic material layer.

[0512] The photoluminescence (PL) response of each of Sample 1, Sample 2, Sample 3, and Sample 6 were measured. It was observed that the PL intensities of Sample 1 and Sample 6 were identical, thus indicating that the Patterning Material does not exhibit photoluminescence in the detected wavelength range. For each of Sample 2 and Sample 3, photoluminescence was detected in wavelengths of around 500 nm to about 600 nm.

[0513] Each of Samples 1 to 6 was then subjected to an open mask deposition of Yb, followed by Ag. Specifically, the surfaces of the nucleation modifying coatings formed by the above materials were subjected to an open mask deposition of Yb, followed by Ag. More specifically, each sample was subjected to a Yb vapor flux until a reference thickness of about 1 nm was reached, followed by an Ag vapor flux until a reference thickness of about 12 nm was reached. Once the samples were fabricated, optical transmission measurements were taken to determine the amount of at least one of: Yb, and Ag, deposited on the exposed layer surface 11 of the nucleation modifying coatings. Those having ordinary skill in the relevant art will appreciate that samples having little to no metal present thereon may be substantially transparent, while samples with metal deposited thereon, particularly as a closed coating 140, may generally exhibit a substantially lower light transmittance. Accordingly, the performance of various example coatings as a patterning coating 110 may be assessed by measuring the EM radiation transmission, which may directly correlate to an amount (thickness) of metallic deposited material deposited thereon from deposition of either of both of Yb and Ag.

[0514] The reduction in optical transmittance as a function of wavelength of each of Sample 1, Sample 2, Sample 3, Sample 4, Sample 5, and Sample 6 were measured. Additionally, a reduction in optical transmittance at a wavelength of 600 nm after each sample was subjected to an Ag vapor flux was measured and summarized in Table 6 below.Table 6

[0515] Specifically, the transmittance reduction (%) for each sample in Table 6 was determined by measuring the light transmission through the sample before and after theexposure to the Yb and Ag vapor flux and expressing the reduction in the EM radiation transmittance as a percentage.

[0516] As may be seen, Sample 1, Sample 2, and Sample 3 exhibited a substantially low transmittance reduction of less than 2%, and in the case of Samples 1 and 3, less than 1%. Accordingly, it may be observed that the nucleation modifying coatings provided for these samples acted as an NIC. By contrast, Sample 4, Sample 5, and Sample 6 each exhibited a transmittance reduction of 43%, 47%, and 45%, respectively. Accordingly, the nucleation modifying coatings provided for these samples did not act as an NIC but may have indeed acted as an NPC 720.

[0517] Moreover, it was found that Sample 1, in which the patterning coating 110 was comprised of substantially only the NIC Material, did not exhibit photoluminescence. However, Sample 2 and Sample 3 in which the patterning coating 110 comprised PL Material 1 and PL Material 2, respectively, in addition to the NIC material, were found to exhibit photoluminescence while also acting as an NIC by providing a surface with low initial sticking probability against the deposition of the deposited material 531.Deposited Laver

[0518] In some non-limiting examples, where the patterning coating 110 is restricted in its lateral extent to the first portion 101, in the second portion 102 of the lateral aspect of the device 100, a deposited layer 130 comprising a deposited material 531 may be disposed as a closed coating 140 on an exposed layer surface 11 of the underlying layer 710.

[0519] In some non-limiting examples, the deposited layer 130 may comprise a deposited material 531.

[0520] In some non-limiting examples, the deposited material 531 may comprise an element selected from at least one of: potassium (K), sodium (Na), lithium (Li), Ba, cesium (Cs), Yb, Ag, gold (Au), Cu, Al, Mg, Zn, Cd, tin (Sn), and yttrium (Y). In some nonlimiting examples, the element may comprise at least one of: K, Na, Li, Ba, Cs, Yb, Ag, Au, Cu, Al, and Mg. In some non-limiting examples, the element may comprise at least one of: Cu, Ag, and Au. In some non-limiting examples, the element may be Cu. In some nonlimiting examples, the element may be Al. In some non-limiting examples, the elementmay comprise at least one of: Mg, Zn, Cd, and Yb. In some non-limiting examples, the element may comprise at least one of: Mg, Ag, Al, Yb, and Li. In some non-limiting examples, the element may comprise at least one of: Mg, Ag, and Yb. In some non-limiting examples, the element may comprise at least one of: Mg, and Ag. In some non-limiting examples, the element may be Ag.

[0521] In some non-limiting examples, the deposited material 531 may comprise a pure metal. In some non-limiting examples, the deposited material 531 may be (substantially) pure Ag. In some non-limiting examples, the substantially pure Ag may have a purity of one of at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%. In some non-limiting examples, the deposited material 531 may be (substantially) pure Mg. In some non-limiting examples, the substantially pure Mg may have a purity of one of at least about: 95%, 99%, 99.9%, 99.99%, 99.999%, and 99.9995%.

[0522] In some non-limiting examples, the deposited material 531 may comprise an alloy. In some non-limiting examples, the alloy may be one of: an Ag-containing alloy, an Mg-containing alloy, and an AgMg-containing alloy. In some non-limiting examples, the AgMg-containing alloy may have an alloy composition that may range from about 1 : 10 (Ag:Mg) to about 10: 1 by volume.

[0523] In some non-limiting examples, the deposited material 531 may comprise other metals in one of: in place of, and in combination with, Ag. In some non-limiting examples, the deposited material 531 may comprise an alloy of Ag with at least one other metal. In some non-limiting examples, the deposited material 531 may comprise an alloy of Ag with at least one of: Mg, and Yb. In some non-limiting examples, such alloy may be a binary alloy having a composition between about 5-95 vol.% Ag, with the remainder being the other metal. In some non-limiting examples, the deposited material 531 may comprise Ag and Mg. In some non-limiting examples, the deposited material 531 may comprise an Ag:Mg alloy having a composition between about 1 : 10-10: 1 by volume. In some nonlimiting examples, the deposited material 531 may comprise Ag and Yb. In some nonlimiting examples, the deposited material 531 may comprise a Yb:Ag alloy having a composition between about 1 :20-10: 1 by volume. In some non-limiting examples, the deposited material 531 may comprise Mg and Yb. In some non-limiting examples, the deposited material 531 may comprise an Mg:Yb alloy. In some non-limiting examples, thedeposited material 531 may comprise Ag, Mg, and Yb. In some non-limiting examples, the deposited layer 130 may comprise an Ag:Mg:Yb alloy.

[0524] In some non-limiting examples, the deposited layer 130 may comprise at least one additional element. In some non-limiting examples, such additional element may be a non-metallic element. In some non-limiting examples, the non-metallic element may be at least one of: O, S, N, and C. It will be appreciated by those having ordinary skill in the relevant art that, in some non-limiting examples, such additional element(s) may be incorporated into the deposited layer 130 as a contaminant, due to the presence of such additional element(s) in at least one of: the source material, equipment used for deposition, and the vacuum chamber environment. In some non-limiting examples, the concentration of such additional element(s) may be limited to be below a threshold concentration. In some non-limiting examples, such additional element(s) may form a compound together with other element(s) of the deposited layer 130. In some non-limiting examples, a concentration of the non-metallic element in the deposited material 531 may be one of no more than about: 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%. In some non-limiting examples, the deposited layer 130 may have a composition in which a combined amount of O and C therein may be one of no more than about: 10%, 5%, 1%, 0.1%, 0.01%, 0.001%, 0.0001%, 0.00001%, 0.000001%, and 0.0000001%.

[0525] It has now been found that reducing a concentration of certain non-metallic elements in the deposited layer 130, particularly in cases wherein the deposited layer 130 may be substantially comprised of metal(s) (alloy(s)), may facilitate selective deposition of the deposited layer 130. Without wishing to be bound by any particular theory, it may be postulated that certain non-metallic elements, such as, in some non-limiting examples, at least one of: O, and C, when present in the vapor flux 532 of at least one of: the deposited layer 130, in the deposition chamber, and the environment, may be deposited onto the surface of the patterning coating 110 to act as nucleation sites for the metallic element(s) of the deposited layer 130. It may be postulated that reducing a concentration of such non- metallic elements that could act as nucleation sites may facilitate reducing an amount of deposited material 531 deposited on the exposed layer surface 11 of the patterning coating 110.

[0526] In some non-limiting examples, the deposited material 531 may be deposited on a metal-containing underlying layer 710. In some non-limiting examples, the deposited material 531 and the underlying layer 710 thereunder may comprise a metal in common.

[0527] In some non-limiting examples, the deposited layer 130 may comprise a plurality of layers of the deposited material 531. In some non-limiting examples, the deposited material 531 of a first one of the plurality of layers may be different from the deposited material 531 of a second one of the plurality of layers. In some non-limiting examples, the deposited layer 130 may comprise a multilayer coating. In some non-limiting examples, such multilayer coating may be one of: Yb / Ag, Yb / Mg, Yb / Mg:Ag, Yb / Yb:Ag, Yb / Ag / Mg, and Yb / Mg / Ag.

[0528] In some non-limiting examples, the deposited material 531 may comprise a metal having a bond dissociation energy, of one of no more than about: 300, 200, 165, 150, 100, 50, and 20, kJ / mol.

[0529] In some non-limiting examples, the deposited material 531 may comprise a metal having an electronegativity that is one of no more than about: 1.4, 1.3, and 1.2.

[0530] In some non-limiting examples, a sheet resistance of the deposited layer 130 may generally correspond to a sheet resistance of the deposited layer 130, measured in isolation from other components, layers, and parts of the device 100. In some non-limiting examples, the deposited layer 130 may be formed as a thin film. Accordingly, in some nonlimiting examples, the characteristic sheet resistance for the deposited layer 130 may be determined based on at least one of: the composition, thickness, and morphology, of such thin film. In some non-limiting examples, the sheet resistance may be one of no more than about: 10, 5, 1, 0.5, 0.2, and 0.1, / □.

[0531] In some non-limiting examples, the deposited layer 130 may be disposed in a pattern that may be defined by at least one region therein that is substantially devoid of a closed coating 140 of the deposited layer 130. In some non-limiting examples, the at least one region may separate the deposited layer 130 into a plurality of discrete fragments thereof. In some non-limiting examples, each discrete fragment of the deposited layer 130 may be a distinct second portion 102. In some non-limiting examples, the plurality of discrete fragments of the deposited layer 130 may be physically spaced apart from one another in the lateral aspect thereof. In some non-limiting examples, at least two of suchplurality of discrete fragments of the deposited layer 130 may be electrically coupled. In some non-limiting examples, at least two of such plurality of discrete fragments of the deposited layer 130 may be each electrically coupled with a common conductive coating, including without limitation, the underlying layer 710, to allow the flow of electrical current between them. In some non-limiting examples, at least two of such plurality of discrete fragments of the deposited layer 130 may be electrically insulated from one another.Display Panel and User Device

[0532] Turning now to FIG. 3, there is shown a cross-sectional view of an example layered opto-electronic device 200, such as a display panel 300. In some non-limiting examples, the display panel 300 may comprise a plurality of layers deposited on a substrate 10, culminating with an outermost layer that forms a face 301 thereof. In some non-limiting examples, the display panel 300 may be a version of the device 200.

[0533] The face 301 of the display panel 300 may extend across a lateral aspect thereof, substantially along a plane defined by the lateral axes.

[0534] In some non-limiting examples, the face 301, and indeed, the entire display panel 300, may act as a face of a user device 310 through which at least one EM signal 331 may be exchanged therethrough at a non-zero angle relative to the plane of the face 301. In some non-limiting examples, the user device 310 may be a computing device 310, such as, without limitation, a smartphone, a tablet, a laptop, an e-reader, and some other electronic device 310, such as a monitor, a television set, and a smart device 310, including without limitation, an automotive display, windshield, a household appliance, and a medical, commercial, and industrial device 310.

[0535] In some non-limiting examples, the face 301 may correspond to, and in some non-limiting examples, mate with, at least one of: a body 320, and an opening 321 therewithin, within which at least one under-display component 330 may be housed.

[0536] In some non-limiting examples, the at least one under-display component 330 may be formed, including without limitation, at least one of: integrally, and as an assembled module, with the display panel 300 on a surface thereof opposite to the face 301.

[0537] In some non-limiting examples, at least one aperture 322 may be formed in the display panel 300 to allow for the exchange of at least one EM signal 331 through the face 301 of the display panel 300, at a non-zero angle to the plane defined by the lateralaxes, including without limitation, concomitantly, the layers of the display panel 300, including without limitation, the face 301 of the display panel 300.

[0538] In some non-limiting examples, the at least one aperture 322 may be understood to comprise one of: the absence, and reduction in at least one of: thickness, and capacity, of a substantially opaque coating otherwise disposed across the display panel 300. In some non-limiting examples, the at least one aperture 322 may be embodied as a transmissive region 212 as described herein.

[0539] However the at least one aperture 322 is embodied, the at least one EM signal 331 may pass therethrough such that it passes through the face 301. As a result, the at least one EM signal 331 may be considered to exclude any EM radiation that may extend along the plane defined by the lateral axes, including without limitation, any electric current that may be conducted across at least one particle structure 150 laterally across the display panel 300.

[0540] Further, those having ordinary skill in the relevant art will appreciate that the at least one EM signal 331 may be differentiated from EM radiation per se, including without limitation, one of: electric current, and an electric field generated thereby, in that the at least one EM signal 331 may convey, either one of: alone, and in conjunction with other EM signals 331, some information content, including without limitation, an identifier by which the at least one EM signal 331 may be distinguished from other EM signals 331. In some non-limiting examples, the information content may be conveyed by at least one of: specifying, altering, and modulating, at least one of: the wavelength, frequency, phase, timing, bandwidth, resistance, capacitance, impedance, conductance, and other characteristic of the at least one EM signal 331.

[0541] In some non-limiting examples, the at least one EM signal 331 passing through the at least one aperture 322 of the display panel 300 may comprise at least one photon and, in some non-limiting examples, may have a wavelength spectrum that lies, without limitation, within at least one of: the visible spectrum, the IR spectrum, and the NIR spectrum. In some non-limiting examples, the at least one EM signal 331 passing through the at least one aperture 322 of the display panel 300 may have a wavelength that lies, without limitation, within at least one of: the IR, and NIR spectrum.

[0542] In some non-limiting examples, the at least one EM signal 331 passing through the at least one aperture 322 of the display panel 300 may comprise ambient light incident thereon.

[0543] In some non-limiting examples, the at least one EM signal 331 exchanged through the at least one aperture 322 of the display panel 300 may be at least one of: transmitted, and received, by the at least one under-display component 330.

[0544] In some non-limiting examples, the at least one under-display component 330 may have a size that is at least a single transmissive region 212, but may underlie not only a plurality thereof, but also at least one emissive region 210 extending therebetween. Similarly, in some non-limiting examples, the at least one under-display component 330 may have a size that is at least a single one of the at least one apertures 322.

[0545] In some non-limiting examples, the at least one under-display component 330 may comprise a receiver 330r, adapted to receive and process at least one received EM signal 33 lr, passing through the at least one aperture 322 from beyond the user device 310. Non-limiting examples of such receiver 330r include an under-display camera (UDC), and a sensor, including without limitation, IR sensor / detector, an NIR sensor / detector, a LIDAR sensing module, a fingerprint sensing module, an optical sensing module, an IR (proximity) sensing module, an iris recognition sensing module, and a facial recognition sensing module, including without limitation, a part thereof.

[0546] In some non-limiting examples, the at least one under-display component 330 may comprise a transmitter 330t adapted to emit at least one transmitted EM signal 33 It passing through the at least one aperture 322 beyond the user device 310. Non-limiting examples, of such transmitter 330t include a source of EM radiation, including without limitation, a built-in flash, a flashlight, an IR emitter, a NIR emitter, a LIDAR sensing module, a fingerprint sensing module, an optical sensing module, an IR (proximity) sensing module, an iris recognition sensing module, and a facial recognition sensing module, including without limitation, a part thereof.

[0547] In some non-limiting examples, the at least one received EM signal 33 lr may include at least a fragment of the at least one transmitted EM signal 33 It which is one of: reflected off, and otherwise returned by, an external surface to the user device 310, including without limitation, a user 30.

[0548] In some non-limiting examples, the at least one EM signal 331 passing through the at least one aperture 322 of the display panel 300 beyond the user device 310, including without limitation, those transmitted EM signals 33 It emitted by the at least one under-display component 330 that may comprise a transmitter 330t, may emanate from the display panel 300, and pass back as received EM signals 33 lr through the at least aperture 322 of the display panel 300 to at least one under-display component 330 that may comprise a receiver 33 Or.

[0549] In some non-limiting examples, the under-display component 330 may comprise an IR emitter and an IR sensor. In some non-limiting examples, such underdisplay component 330 may comprise, as one of: a part, component, and module, thereof: at least one of: a dot-matrix projector, a time-of-flight (ToF) sensor module, which may operate as one of: a direct ToF, and an indirect ToF, sensor, a vertical cavity surfaceemitting laser (VCSEL), flood illuminator, NIR imager, folded optics, and a diffractive grating.

[0550] In some non-limiting examples, there may be a plurality of under-display components 330 within the user device 310, a first one of which may comprise a transmitter 330t for emitting at least one transmitted EM signal 33 It to pass through the at least one aperture 322, beyond the user device 310, and a second one of which may comprise a receiver 33 Or, for receiving at least one received EM signal 33 lr. In some non-limiting examples, such transmitter 330t and receiver 33 Or may be embodied in a single underdisplay component 330.

[0551] In some non-limiting examples, the display panel 300 may comprise at least one signal-exchanging part 303 and at least one display part 307.

[0552] In some non-limiting examples, the at least one display part 307 may comprise a plurality of emissive regions 210, in some non-limiting examples, laid out in a lateral pattern. In some non-limiting examples, the emissive regions 210 in the at least one display part 307 may correspond to (sub-) pixels 1015 / 216 of the display panel 300.

[0553] In some non-limiting examples, the at least one signal-exchanging part 303 may comprise at least one emissive region 210 and at least one transmissive region 212. In some non-limiting examples, the at least one emissive region 210 in the at least one signalexchanging part 303 may correspond to (sub-) pixel(s) 1015 / 216 of the display panel 300,and in some non-limiting examples, may be substantially laid out in a similar, including without limitation, identical, lateral pattern as in the at least one display part 307.

[0554] In some non-limiting examples, the at least one display part 307 may be adjacent to, and in some non-limiting examples, separated by, at least one signalexchanging part 303.

[0555] In some non-limiting examples, the at least one signal-exchanging part 303 may be positioned proximate to an extremity of the display panel 300, including without limitation, at least one of: an edge, and a corner, thereof. In some non-limiting examples, the at least one signal-exchanging part 303 may be positioned substantially centrally within the lateral aspect of the display panel 300.

[0556] In some non-limiting examples, the at least one display part 307 may substantially surround, including without limitation, in conjunction with at least one other display part 307, the at least one signal-exchanging part 303.

[0557] In some non-limiting examples, the at least one signal-exchanging part 303 may be positioned proximate to an extremity and configured such that the at least one display part(s) 307 do(es) not completely surround the at least one signal-exchanging part 303.

[0558] In some non-limiting examples, a pixel density of the at least one emissive region 210 of the at least one signal-exchanging part 303 may be substantially the same as a pixel density of the at least one emissive region 210 of the at least one display part 307 proximate thereto, at least in an area thereof that is substantially proximate to the at least one signal-exchanging part 303. In some non-limiting examples, the pixel density of the display panel 300 may be substantially uniform thereacross. In at least some applications, there may be scenarios calling for the at least one signal-exchanging part 303 and the at least one display part 307 to have substantially the same pixel density, including without limitation, so that a resolution of the display panel 300 may be substantially the same across both the at least one signal-exchanging part 303 and the at least one display part 307 thereof.

[0559] Those having ordinary skill in the relevant art will appreciate that there may be scenarios calling for the layout of (sub-) pixels 1015 / 216 in the signal-exchanging part 303 of the display panel 300 to resemble, to some extent, the layout thereof in the displaypart 307 of the display panel 300, including without limitation, a size, shape, (colour) order, and configuration of (sub-) pixels 1015 / 216, and wherein a spacing between adjacent (sub-) pixels 1015 / 216 (“pitch”) in the signal-exchanging part 303 is one of: the same, and an integer multiple thereof, of a pitch thereof in the display part 307.

[0560] Having said this, examples in the present disclosure may have applicability in scenarios in which the layout of (sub-) pixels 1015 / 216 in the signal-exchanging part 303 may be substantially different than the layout thereof in the display part 307 of the display panel 300.

[0561] In some non-limiting examples, the display panel 300 may further comprise at least one transition region (not shown) between the at least one signal-exchanging part 303 and the at least one display part 307, wherein the configuration of at least one of: the emissive regions 210, and the transmissive regions 212 therein, may differ from those of at least one of: the at least one signal-exchanging part 303, and the at least one display part 307. In some non-limiting examples, such transition region may be omitted such that the emissive regions 210 may be provided in a substantially continuous repeating pattern across both the at least one signal-exchanging part 303 and the at least one display part 307.

[0562] In some non-limiting examples, the at least one signal-exchanging part 303 may have a polygonal contour, including without limitation, at least one of a: substantially square, and rectangular, configuration.

[0563] In some non-limiting examples, the at least one signal-exchanging part 303 may have a curved contour, including without limitation, at least one of a: substantially circular, oval, and elliptical, configuration.

[0564] In some non-limiting examples, the transmissive regions 212 in the at least one signal-exchanging part 303 may be configured to allow EM signals having a wavelength (range) corresponding to the IR spectrum to pass through the entirety of a cross- sectional aspect thereof.

[0565] In some non-limiting examples, the at least one signal-exchanging part 303 may have a reduced number of, including without limitation, be substantially devoid of, backplane components, including without limitation, TFT structures 206, including without limitation, metal trace lines, capacitors, and other EM radiation-absorbing element, including without limitation, opaque elements, the presence of which may otherwiseinterfere with the capture of the EM signals by the at least one under-display component 330, including without limitation, the capture of an image by a camera.

[0566] In some non-limiting examples, the user device 310 may house at least one transmitter 330t for transmitting at least one transmitted EM signal 33 It through at least one first transmissive region 212 in, and in some non-limiting examples, substantially corresponding to, a first signal-exchanging part 303, beyond the face 301. In some nonlimiting examples, the user device 310 may house at least one receiver 33 Or for receiving at least one received EM signal 33 lr through at least one second transmissive region 212 in, and in some non-limiting examples, substantially corresponding to, a second signalexchanging part 303, from beyond the face 301. In some non-limiting examples, the at least one received EM signal 33 lr may be the same as the at least one transmitted EM signal 33 It, reflected off an external surface, including without limitation, a user 30, including without limitation, for biometric authentication thereof.

[0567] In some non-limiting examples, at least one of: the at least one transmitter 330t, and the at least one receiver 330t, may be arranged behind the corresponding at least one signal-exchanging part 303, such that EM signals, including without limitation, IR signals, may be at least one of: emitted, and received, respectively, by passing through the at least one signal-exchanging part 303 of the display panel 300. In some non-limiting examples, the at least one transmitter 330t and the at least one receiver 33 Or may both be arranged behind a single signal-exchanging part 303, which in some non-limiting examples, may be elongated along at least one configuration axis, such that it extends across both the at least one transmitter 330t and the at least one receiver 330r.

[0568] In some non-limiting examples, the display panel 300 may further comprise a non-display part (not shown), which in some non-limiting examples, may be substantially devoid of any emissive regions 210. In some non-limiting examples, the user device 310 may house an under-display component 330, including without limitation, a camera, arranged within the non-display part.

[0569] In some non-limiting examples, the non-display part may be arranged adjacent to, and in some non-limiting examples, between a plurality of signal-exchanging parts 303 corresponding to a plurality of under-display components 330, including without limitation, a transmitter 330t and a receiver 33 Or.

[0570] In some non-limiting examples, the non-display part may comprise a through-hole part (not shown), which in some non-limiting examples, may be arranged to overlap the camera. In some non-limiting examples, the display panel 300 may, in the through-hole part, be substantially devoid of any of at least one of a: layer, coating, and component, that may otherwise be present in at least one of: the at least one signalexchanging part 303, and the at least one display part 307, including without limitation, a component of at least one of the: backplane 202, and frontplane 201, the presence of which may otherwise interfere with the capture of an image by the camera. In some non-limiting examples, an overlying layer 170, including without limitation, at least one of: a polarizer, and one of a: cover glass, and glass cap, of the display panel 300, may extend substantially across the at least one signal-exchanging part 303, the at least one display part 307, and the non-display part, such that it may extend substantially across the display panel 300. In some non-limiting examples, the through-hole part may be substantially devoid of a polarizer in order to enhance the transmission of EM radiation therethrough.

[0571] In some non-limiting examples, the non-display part may comprise a non- through-hole part, which in some non-limiting examples, may be arranged between the through-hole part and an adjacent signal-exchanging part 303 in a lateral aspect. In some non-limiting examples, the non-through-hole part may surround at least a part of a perimeter of the through-hole part. In some non-limiting examples, the user device 310 may comprise additional ones of at least one of a: module, component, and sensor, in a part of the user device 310 corresponding to the non-through-hole part of the display panel 300.

[0572] In some non-limiting examples, the emissive regions 210 in the at least one signal-exchanging part 303 may be electrically coupled with at least one TFT structure located in the non-through-hole part of the non-display part. That is, in some non-limiting examples, the TFT structures 206 for actuating the (sub-) pixels 1015 / 216 in the at least one signal-exchanging part 303 may be relocated outside the at least one signal-exchanging part 303 and within the non-through-hole part of the display panel 300, such that a substantially high transmission of EM radiation, in at least one of the: IR, and NIR, spectrum, may be directed through the non-emissive regions 211 within the at least one signal-exchanging part 303. In some non-limiting examples, the TFT structures 206 in the non-through-hold part may be electrically coupled with (sub-) pixels 1015 / 216 in the at least one signal-exchanging part 303 via conductive trace(s). In some non-limiting examples, at least one of the: transmitter 330t, and receiver 330r may be arranged to be proximate to the non-through- hole part in the lateral aspect, such that a distance over which electrical current travels between the TFT structures 206 and the (sub-) pixels 1015 / 216 associated therewith, may be reduced.Selective Deposition Using Patterning Coatings

[0573] FIG. 4 is an example schematic diagram illustrating a non-limiting example of an evaporative deposition process, shown generally at 400, in a chamber 420, for selectively depositing a patterning coating 110 onto a first portion 101 of an exposed layer surface 11 of the underlying layer 710.

[0574] In the process 400, a quantity of a patterning material 411 may be heated under vacuum, to evaporate (sublime) the patterning material 411. In some non-limiting examples, the patterning material 411 may comprise substantially (including without limitation, entirely), a material used to form the patterning coating 110. In some nonlimiting examples, such material may comprise an organic material.

[0575] An evaporated flux 412 of the patterning material 411 may flow through the chamber 420, including in a direction indicated by arrow 41, toward the exposed layer surface 11. When the evaporated flux 412 is incident on the exposed layer surface 11, the patterning coating 110 may be formed thereon.

[0576] In some non-limiting examples, as shown in the figure for the process 400, the patterning coating 110 may be selectively deposited only onto a portion, in the example illustrated, the first portion 101, of the exposed layer surface 11 of the underlying layer 710, by the interposition, between the vapor flux 412 and the exposed layer surface 11 of the underlying layer 710, of a shadow mask 415, which in some non-limiting examples, may be an FMM. In some non-limiting examples, such a shadow mask 415 may, in some nonlimiting examples, be used to form substantially small features, with a feature size on the order of (smaller than) tens of microns.

[0577] The shadow mask 415 may have at least one aperture 416 extending therethrough such that a part of the evaporated flux 412 passes through the aperture 416 and may be incident on the exposed layer surface 11 to form the patterning coating 110. Where the evaporated flux 412 does not pass through the aperture 416 but is incident on a surface417 of the shadow mask 415, it is precluded from being disposed on the exposed layer surface 11 to form the patterning coating 110. In some non-limiting examples, the shadow mask 415 may be configured such that the evaporated flux 412 that passes through the aperture 416 may be incident on the first portion 101 but not the second portion 102. The second portion 102 of the exposed layer surface 11 may thus be substantially devoid of the patterning coating 110. In some non-limiting examples (not shown), the patterning material 411 that is incident on the shadow mask 415 may be deposited on the surface 417 thereof.

[0578] Accordingly, a patterned surface may be produced upon completion of the deposition of the patterning coating 110.

[0579] FIG. 5 is an example schematic diagram illustrating a non-limiting example of a result of an evaporative process, shown generally at 500a, in a chamber 420, for selectively depositing a closed coating 140 of a deposited layer 130 onto the second portion 102 of an exposed layer surface 11 of the underlying layer 710 that is substantially devoid of the patterning coating 110 that was selectively deposited onto the first portion 101, including without limitation, by the evaporative process 400 of FIG. 4.

[0580] In some non-limiting examples, the deposited layer 130 may be comprised of a deposited material 531, in some non-limiting examples, comprising at least one metal. It will be appreciated by those having ordinary skill in the relevant art that, in some nonlimiting examples, a vaporization temperature of an organic material is low relative to the vaporization temperature of metals, such as may be employed as a deposited material 531.

[0581] Thus, in some non-limiting examples, there may be fewer constraints in employing a shadow mask 415 to selectively deposit a patterning coating 110 in a pattern, relative to directly patterning the deposited layer 130 using such shadow mask 415.

[0582] Once the patterning coating 110 has been deposited on the first portion 101 of the exposed layer surface 11 of the underlying layer 710, a closed coating 140 of the deposited material 531 may be deposited, on the second portion 102 of the exposed layer surface 11 that is substantially devoid of the patterning coating 110, as the deposited layer 130.

[0583] In the process 500a, a quantity of the deposited material 531 may be heated under vacuum, to sublime the deposited material 531. In some non-limiting examples, thedeposited material 531 may be comprised of substantially, including without limitation, entirely, a material used to form the deposited layer 130.

[0584] An evaporated flux 532 of the deposited material 531 may be directed inside the chamber 420, including in a direction indicated by arrow 51, toward the exposed layer surface 11 of the first portion 101 and of the second portion 102. When the evaporated flux 532 is incident on the second portion 102 of the exposed layer surface 11, a closed coating 140 of the deposited material 531 may be formed thereon as the deposited layer 130.

[0585] In some non-limiting examples, deposition of the deposited material 531 may be performed using one of: an open mask, and a mask-free, deposition process.

[0586] It will be appreciated by those having ordinary skill in the relevant art that, contrary to that of a shadow mask 415, the feature size of an open mask may be generally comparable to the size of a device 100 being manufactured.

[0587] It will be appreciated by those having ordinary skill in the relevant art that, in some non-limiting examples, the use of an open mask may be omitted. In some nonlimiting examples, an open mask deposition process described herein may alternatively be conducted without the use of an open mask, such that an entire target exposed layer surface 11 may be exposed.

[0588] Indeed, as shown in FIG. 5, the evaporated flux 532 may be incident both on an exposed layer surface 11 of the patterning coating 110 across the first portion 101 as well as the exposed layer surface 11 of the underlying layer 710 across the second portion 102 that is substantially devoid of the patterning coating 110.

[0589] Since the exposed layer surface 11 of the patterning coating 110 in the first portion 101 may exhibit a substantially low initial sticking probability against the deposition of the deposited material 531 relative to the exposed layer surface 11 of the underlying layer 710 in the second portion 102, the deposited layer 130 may be selectively deposited substantially only on the exposed layer surface 11, of the underlying layer 710 in the second portion 102, that is substantially devoid of the patterning coating 110. By contrast, the evaporated flux 532 incident on the exposed layer surface 11 of the patterning coating 110 across the first portion 101 may tend to not be deposited (as shown 533), and the exposed layer surface 11 of the patterning coating 110 across the first portion 101 may be substantially devoid of a closed coating 140 of the deposited layer 130.

[0590] In some non-limiting examples, an initial deposition rate, of the evaporated flux 532 on the exposed layer surface 11 of the underlying layer 710 in the second portion 102, may be one of at least about: 200, 550, 900, 1,000, 1,500, 1,900, and 2,000, times an initial deposition rate of the evaporated flux 532 on the exposed layer surface 11 of the patterning coating 110 in the first portion 101.

[0591] Thus, the combination of the selective deposition of a patterning coating 110 in Fig- 4 using a shadow mask 415 and at least one of: an open mask, and a mask-free, deposition of the deposited material 531 may result in a version 500aof the device 100 shown in FIG. 5.

[0592] After selective deposition of the patterning coating 110 across the first portion 101, a closed coating 140 of the deposited material 531 may be deposited over the device 500aas the deposited layer 130, in some non-limiting examples, using one of: an open mask, and a mask-free, deposition process, but may remain substantially only within the second portion 102, which is substantially devoid of the patterning coating 110.

[0593] The patterning coating 110 may provide, within the first portion 101, an exposed layer surface 11 with a substantially low initial sticking probability, against the deposition of the deposited material 531, and that is substantially less than the initial sticking probability, against the deposition of the deposited material 531, of the exposed layer surface 11 of the underlying layer 710 of the device 500awithin the second portion 102.

[0594] Thus, the first portion 101 may be substantially devoid of a closed coating 140 of the deposited material 531.

[0595] While the present disclosure contemplates the patterned deposition of the patterning coating 110 by an evaporative deposition process, involving a shadow mask 415, those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, this may be achieved by any applicable deposition process, including without limitation, a micro-contact printing process.

[0596] While the present disclosure contemplates the patterning coating 110 being an NIC, those having ordinary skill in the relevant art will appreciate that, in some nonlimiting examples, the patterning coating 110 may be an NPC 720. In such examples, the portion (such as, without limitation, the first portion 101) in which the NPC 720 has beendeposited may, in some non-limiting examples, have a closed coating 140 of the deposited material 531, while the other portion (such as, without limitation, the second portion 102) may be substantially devoid of a closed coating 140 of the deposited material 531.

[0597] In some non-limiting examples, an average layer thickness of the patterning coating 110 and of the deposited layer 130 deposited thereafter may be varied according to a variety of parameters, including without limitation, a given application and given performance characteristics. In some non-limiting examples, the average layer thickness of the patterning coating 110 may be comparable to, including without limitation, substantially no more than, an average layer thickness of the deposited layer 130 deposited thereafter. Use of a substantially thin patterning coating 110 to achieve selective patterning of a deposited layer 130 may have applicability to provide flexible devices 100.

[0598] In some non-limiting examples, the device 200 may further comprise an NPC 720 disposed between the patterning coating 110 and the second electrode 240.

[0599] In some non-limiting examples, the patterning coating 110 may be formed concurrently with the at least one semiconducting layer(s) 230. In some non-limiting examples, at least one material used to form the patterning coating 110 may also be used to form the at least one semiconducting layer(s) 230 to reduce a number of stages for fabricating the device 200.Edge EffectsPatterning Coating Transition Region

[0600] Turning to FIG. 6A, there may be shown a version 600aof the device 100 of FIG. 1 that may show in exaggerated form, an interface between the patterning coating 110 in the first portion 101 and the deposited layer 130 in the second portion 102. FIG. 6B may show the device 600ain plan.

[0601] As may be better seen in FIG. 6B, in some non-limiting examples, the patterning coating 110 in the first portion 101 may be surrounded on all sides by the deposited layer 130 in the second portion 102, such that the first portion 101 may have a boundary that is defined by the further edge 615 of the patterning coating 110 in the lateral aspect along each lateral axis. In some non-limiting examples, the patterning coating edge 615 in the lateral aspect may be defined by a perimeter of the first portion 101 in such aspect.

[0602] In some non-limiting examples, the first portion 101 may comprise at least one patterning coating transition region 10 It, in the lateral aspect, in which a thickness of the patterning coating 110 may transition from a maximum, to a reduced, thickness. The extent of the first portion 101 that does not exhibit such a transition may be identified as a patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the patterning coating 110 may form a substantially closed coating 140 in the patterning coating non-transition part 10 In of the first portion 101.

[0603] In some non-limiting examples, the patterning coating transition region 10 It may extend, in the lateral aspect, between the patterning coating non-transition part 10 In of the first portion 101 and the patterning coating edge 615.

[0604] In some non-limiting examples, in plan, the patterning coating transition region 10 It may extend along a perimeter of the patterning coating non-transition part 101n of the first portion 101.

[0605] In some non-limiting examples, along at least one lateral axis, the patterning coating non-transition part 10 In may occupy the entirety of the first portion 101, such that there is no patterning coating transition region 10 It between it and the second portion 102.

[0606] As illustrated in FIG. 6A, in some non-limiting examples, the patterning coating 110 may have an average film thickness d in the patterning coating non-transition part 10 In of the first portion 101 that may be in a range of one of between about: 1-100, 2- 50, 3-30, 4-20, 5-15, 5-10, and 1-10, nm. In some non-limiting examples, the average film thickness d of the patterning coating 110 in the patterning coating non-transition part 10 In of the first portion 101 may be substantially the same (constant) thereacross. In some nonlimiting examples, an average film thickness d of the patterning coating 110 may remain, within the patterning coating non-transition part 10 In, within one of about: 95%, and 90%, of the average film thickness d of the patterning coating 110.

[0607] In some non-limiting examples, the average film thickness d2 may be between about 1-100 nm. In some non-limiting examples, the average film thickness di may be one of no more than about: 80, 60, 50, 40, 30, 20, 15, and 10, nm. In some nonlimiting examples, the average film thickness di of the patterning coating 110 may be one of at least about: 3, 5, and 8, nm.

[0608] In some non-limiting examples, the average film thickness (b of the patterning coating 110 in the patterning coating non-transition part 10 In of the first portion 101 may be no more than about 10 nm. Without wishing to be bound by any particular theory, it has been found, that a non-zero average film thickness ch of the patterning coating 110 that is no more than about 10 nm may, at least in some non-limiting examples, provide certain advantages for achieving, in some non-limiting examples, enhanced patterning contrast of the deposited layer 130, relative to a patterning coating 110 having an average film thickness ch in the patterning coating non-transition part 10 In of the first portion 101 of at least about 10 nm.

[0609] In some non-limiting examples, the patterning coating 110 may have a patterning coating thickness that decreases from a maximum to a minimum within the patterning coating transition region 10 It. In some non-limiting examples, the maximum may be proximate to a boundary between the patterning coating transition region 10 It and the patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the minimum may be proximate to the patterning coating edge 615. In some non-limiting examples, the maximum may be the average film thickness ch in the patterning coating non-transition part 101n of the first portion 101. In some non-limiting examples, the maximum may be no more than one of about: 95%, and 90%, of the average film thickness ch in the patterning coating non-transition part 10 In of the first portion 101. In some nonlimiting examples, the minimum may be in a range of between about 0-0.1 nm.

[0610] In some non-limiting examples, a profile of the patterning coating thickness in the patterning coating transition region 10 It may be sloped. In some non-limiting examples, such profile may be tapered. In some non-limiting examples, the taper may follow one of a: linear, non-linear, parabolic, and exponential decaying, profile.

[0611] In some non-limiting examples, the patterning coating 110 may completely cover the underlying layer 710 in the patterning coating transition region 10 It. In some non-limiting examples, at least a part of the underlying layer 710 may be left uncovered by the patterning coating 110 in the patterning coating transition region 10 It. In some nonlimiting examples, the patterning coating 110 may comprise a substantially closed coating 140 in at least one of at least a part of the patterning coating transition region 10 It, and at least a part of the patterning coating non-transition part 10 In.

[0612] In some non-limiting examples, the patterning coating 110 may comprise a discontinuous layer 160 in at least one of: at least a part of the patterning coating transition region 10 It, and at least a part of the patterning coating non-transition part 101n.

[0613] In some non-limiting examples, at least a part of the patterning coating 110 in the first portion 101 may be substantially devoid of a closed coating 140 of the deposited layer 130. In some non-limiting examples, at least a part of the exposed layer surface 11 of the first portion 101 may be substantially devoid of a closed coating 140 of one of the: deposited layer 130, and deposited material 531.

[0614] In some non-limiting examples, along at least one lateral axis, including without limitation, the X-axis, the patterning coating non-transition part 101n may have a width of wi, and the patterning coating transition region 10 It may have a width of W2. In some non-limiting examples, the patterning coating non-transition part 101n may have a cross-sectional area that, in some non-limiting examples, may be approximated by multiplying the average film thickness ch by the width wi. In some non-limiting examples, the patterning coating transition region 10 It may have a cross-sectional area that, in some non-limiting examples, may be approximated by multiplying an average film thickness across the patterning coating transition region 10 It by the width W2.

[0615] In some non-limiting examples, wi may be at least that of W2. In some nonlimiting examples, a quotient of wi / w2 may be one of at least about: 5, 10, 20, 50, 100, 500, 1,000, 1,500, 5,000, 10,000, 50,000, and 100,000.

[0616] In some non-limiting examples, at least one of wl and w2 may be at least that of the average film thickness di of the underlying layer 710.

[0617] In some non-limiting examples, at least one of wi and W2 may be at least that of d2. In some non-limiting examples, both wi and W2 may be at least that of d2. In some non-limiting examples, wi and W2 both may be at least that of di, and di may be at least that of d2.Deposited Layer Transition Region

[0618] As may be better seen in FIG. 6B, in some non-limiting examples, the patterning coating 110 in the first portion 101 may be surrounded by the deposited layer 130 in the second portion 102 such that the second portion 102 has a boundary that is defined by the further edge 635 of the deposited layer 130 in the lateral aspect along each lateral axis.In some non-limiting examples, the deposited layer edge 635 in the lateral aspect may be defined by a perimeter of the second portion 102 in such aspect.

[0619] In some non-limiting examples, the second portion 102 may comprise at least one deposited layer transition region 102t, in the lateral aspect, in which a thickness of the deposited layer 130 may transition from a maximum, to a reduced, thickness. The extent of the second portion 102 that does not exhibit such a transition may be identified as a deposited layer non-transition part 102n of the second portion 102. In some non-limiting examples, the deposited layer 130 may form a substantially closed coating 140 in the deposited layer non-transition part 102n of the second portion 102.

[0620] In some non-limiting examples, in plan, the deposited layer transition region 102t may extend, in the lateral aspect, between the deposited layer non-transition part 102nof the second portion 102 and the deposited layer edge 635.

[0621] In some non-limiting examples, in plan, the deposited layer transition region 102t may extend along a perimeter of the deposited layer non-transition part 102n of the second portion 102.

[0622] In some non-limiting examples, along at least one lateral axis, the deposited layer non-transition part 102n of the second portion 102 may occupy the entirety of the second portion 102, such that there is no deposited layer transition region 102t between it and the first portion 101.

[0623] As illustrated in FIG. 6A, in some non-limiting examples, the deposited layer 130 may have an average film thickness ds in the deposited layer non-transition part 102n of the second portion 102 that may be in a range of one of between about: 1-500, 5- 200, 5-40, 10-30, and 10-100, nm. In some non-limiting examples, ds may be one of at least about: 10, 50, and 100, nm. In some non-limiting examples, the average film thickness ds of the deposited layer 130 in the deposited layer non-transition part 102t of the second portion 102 may be substantially the same (constant) thereacross.

[0624] In some non-limiting examples, ds may be at least that of the average film thickness di of the underlying layer 710.

[0625] In some non-limiting examples, a quotient dsldi may be one of at least about: 1.5, 2, 5, 10, 20, 50, and 100. In some non-limiting examples, the quotient dsldi may be in a range of one of between about: 0.1-10, and 0.2-40.

[0626] In some non-limiting examples, ds may be at least that of an average film thickness ds of the patterning coating 110.

[0627] In some non-limiting examples, a quotient dslds may be one of at least about: 1.5, 2, 5, 10, 20, 50, and 100. In some non-limiting examples, the quotient dslds may be in a range of one of between about: 0.2-10, and 0.5-40.

[0628] In some non-limiting examples, ds may be at least that of ds and ds may be at least that of di. In some non-limiting examples, ds may be at least that of di and di may be at least that of ds.

[0629] In some non-limiting examples, a quotient dsldi may be between one of about: 0.2-3, and 0.1-5.

[0630] In some non-limiting examples, along at least one lateral axis, including without limitation, the X-axis, the deposited layer non-transition part 102n of the second portion 102 may have a width of ws. In some non-limiting examples, the deposited layer non-transition part 102n of the second portion 102 may have a cross-sectional area as that, in some non-limiting examples, may be approximated by multiplying the average film thickness ds by the width ws.

[0631] In some non-limiting examples, ws may be at least that of the width ws of the patterning coating non-transition part 101n. In some non-limiting examples, ws may be at least that of ws.

[0632] In some non-limiting examples, a quotient wdws may be in a range of one of between about: 0.1-10, 0.2-5, 0.3-3, and 0.4-2. In some non-limiting examples, a quotient ws / ws may be one of at least about: 1, 2, 3, and 4.

[0633] In some non-limiting examples, ws may be at least that of the average film thickness ds of the deposited layer 130.

[0634] In some non-limiting examples, a quotient wslds may be one of at least about: 10, 50, 100, and 500. In some non-limiting examples, the quotient wslds may be no more than about 100,000.

[0635] In some non-limiting examples, the deposited layer 130 may have a thickness that decreases from a maximum to a minimum within the deposited layer transition region 102t. In some non-limiting examples, the maximum may be proximate tothe boundary between the deposited layer transition region 102t and the deposited layer nontransition part 102n of the second portion 102. In some non-limiting examples, the minimum may be proximate to the deposited layer edge 635. In some non-limiting examples, the maximum may be the average film thickness ds in the deposited layer nontransition part 102n of the second portion 102. In some non-limiting examples, the minimum may be in a range of between about 0-0.1 nm. In some non-limiting examples, the minimum may be the average film thickness ds in the deposited layer non-transition part 102n of the second portion 102.

[0636] In some non-limiting examples, a profile of the thickness in the deposited layer transition region 102t may be sloped. In some non-limiting examples, such profile may be tapered. In some non-limiting examples, the taper may follow one of a: linear, nonlinear, parabolic, and exponential decaying, profile.

[0637] In some non-limiting examples, although not shown, the deposited layer 130 may completely cover the underlying layer 710 in the deposited layer transition region 102t. In some non-limiting examples, the deposited layer 130 may comprise a substantially closed coating 140 in at least a part of the deposited layer transition region 102t. In some nonlimiting examples, at least a part of the underlying layer 710 may be uncovered by the deposited layer 130 in the deposited layer transition region 102t.

[0638] In some non-limiting examples, the deposited layer 130 may comprise a discontinuous layer 160 in at least a part of the deposited layer transition region 102t.

[0639] Those having ordinary skill in the relevant art will appreciate that, although not shown, the patterning material 411 may also be present to some extent at an interface between the deposited layer 130 and an underlying layer 710. Such material may be deposited as a result of a shadowing effect, in which a deposited pattern is not identical to a pattern of a mask and may, in some non-limiting examples, result in some evaporated patterning material 411 being deposited on a masked part of a target exposed layer surface 11. In some non-limiting examples, such material may form as at least one of: particle structures 150, and as a thin film having a thickness that may be substantially no more than an average thickness of the patterning coating 110.Overlap

[0640] In some non-limiting examples, although not shown, the deposited layer edge 635 may be spaced apart, in the lateral aspect from the patterning coating transition region 10 It of the first portion 101, such that there is no overlap between the first portion 101 and the second portion 102 in the lateral aspect.

[0641] In some non-limiting examples, at least a part of the first portion 101 and at least a part of the second portion 102 may overlap in the lateral aspect. Such overlap may be identified by an overlap portion 603, such as may be shown in some non-limiting examples in FIG. 6A, in which at least a part of the second portion 102 overlaps at least a part of the first portion 101.

[0642] In some non-limiting examples, although not shown, at least a part of the deposited layer transition region 102t may be disposed over at least a part of the patterning coating transition region 10 It. In some non-limiting examples, at least a part of the patterning coating transition region 10 It may be substantially devoid of at least one of: the deposited layer 130, and the deposited material 531. In some non-limiting examples, the deposited material 531 may form a discontinuous layer 160 on an exposed layer surface 11 of at least a part of the patterning coating transition region 10 It.

[0643] In some non-limiting examples, although not shown, at least a part of the deposited layer transition region 102t may be disposed over at least a part of the patterning coating non-transition part 101n of the first portion 101.

[0644] Although not shown, those having ordinary skill in the relevant art will appreciate that, in some non-limiting examples, the overlap portion 603 may reflect a scenario in which at least a part of the first portion 101 overlaps at least a part of the second portion 102.

[0645] Thus, in some non-limiting examples, at least a part of the patterning coating transition region 10 It may be disposed over at least a part of the deposited layer transition region 102t. In some non-limiting examples, at least a part of the deposited layer transition region 102t may be substantially devoid of at least one of the: patterning coating 110, and patterning material 411. In some non-limiting examples, the patterning material 411 may form a discontinuous layer 160 on an exposed layer surface of at least a part of the deposited layer transition region 102t.

[0646] In some non-limiting examples, at least a part of the patterning coating transition region 10 It may be disposed over at least a part of the deposited layer nontransition part 102n of the second portion 102.

[0647] In some non-limiting examples, the patterning coating edge 615 may be spaced apart, in the lateral aspect, from the deposited layer non-transition part 102nof the second portion 102.

[0648] In some non-limiting examples, the deposited layer 130 may be formed as a single monolithic coating across both the deposited layer non-transition part 102n and the deposited layer transition region 102t of the second portion 102.

[0649] In some non-limiting examples, at least one deposited layer 130, including without limitation, an initial deposited layer 130, may provide, at least in part, the functionality of an EIL 239, in the emissive region 210. Non-limiting examples, of the deposited material 531 for forming such initial deposited layer 130 include Yb, which for example, may be about 1-3 nm in thickness.Edge Effects of Patterning Coatings and Deposited Layers

[0650] FIGs. 7A-7B describe various potential behaviours of patterning coatings 130 at a deposition interface with deposited layers 140.

[0651] Turning to FIG. 7A, there may be shown a first example of a part of an example version 700aof the device 100 at a patterning coating deposition boundary. The device 700amay comprise a substrate 10 having an exposed layer surface 11. A patterning coating 110 may be deposited over a first portion 101 of the exposed layer surface 11 of the underlying layer 710. A deposited layer 130 may be deposited over a second portion 102 of the exposed layer surface 11 of the underlying layer 710. As shown, in some non-limiting examples, the first portion 101 and the second portion 102 may be distinct and nonoverlapping parts of the exposed layer surface 11.

[0652] The deposited layer 130 may comprise a first part 130i and a second part 1302. As shown, in some non-limiting examples, the first part 130i of the deposited layer 130 may substantially cover the second portion 102 and the second part 1302 of the deposited layer 130 may partially overlap (project over) a first part of the patterning coating 110.

[0653] In some non-limiting examples, since the patterning coating 110 may be formed such that its exposed layer surface 11 exhibits a substantially low initial sticking probability against deposition of the deposited material 531, there may be a gap 729 formed between the projecting second part 1302 of the deposited layer 130 and the exposed layer surface 11 of the patterning coating 110. As a result, the second part 1302 may not be in physical contact with the patterning coating 110 but may be spaced-apart therefrom by the ...

Claims

WHAT IS CLAIMED IS:

1. A layered semiconductor device comprising a plurality of layers deposited on a substrate and extending in a lateral aspect defined by a lateral axis thereof, comprising: a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, and disposed on an exposed layer surface of an underlying layer of the device, in a first portion of the lateral aspect, the patterning coating comprising a patterning material having a bulk melting point; and a deposited layer disposed in a second portion of the lateral aspect, the deposited layer comprising the deposited material; wherein: an exposed layer surface of the patterning coating is substantially devoid of a closed coating of the deposited material, and the patterning coating has a film melting point that is greater than the bulk melting point.

2. The device of claim 1, wherein a thickness of the patterning coating is no more than a threshold thickness, above which the film melting point of the patterning coating is substantially the same as the bulking melting point of the patterning material.

3. The device of claim 2, wherein the thickness of the patterning coating is an average layer thickness thereof.

4. The device of claim 2 or 3, wherein the threshold thickness of the patterning coating is one of at least about: 5, 6, 7, 8, 9, and 10, monolayers.

5. The device of any one of claims 2 through 4, wherein the thickness of the patterning coating is one of between about: 1-5, 1-4, 1-3, and 1-2, monolayers.

6. The device of any one of claims 2 through 5, wherein the thickness of the patterning coating is one of between about: 2-8, 2-7, 2-6, 3-6, and 3-5, nm.

7. The device of any one of claims 1 through 6, wherein a difference between the film melting point and the bulk melting point is one of at least about: 5°C, 8°C, 10°C, 12°C, 15°C, 18°C, 20°C, 25°C, and 30°C.

8. The device of any one of claims 1 through 7, wherein the film melting point of the patterning coating is one of at least about: 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 120°C, and 130°C.

9. The device of any one of claims 1 through 8, wherein the bulk melting point of the patterning material is one of no more than about: 100°C, 95°C, 90°C, 85°C, 80°C, 75°C, and 70°C.

10. The device of any one of claims 1 through 9, wherein the patterning material comprises a polymeric material.

11. The device of any one of claims 1 through 10, wherein the patterning material comprises an oligomeric material.

12. The device of any one of claims 1 through 11, wherein a molecule of the patterning material has a molecular size of one of at least about: 4, 5, 6, 8, 10, 12, 15, and 18, angstroms.

13. The device of any one of claims 1 through 12, wherein a majority of molecules of the patterning material in the patterning coating align in an ordered orientation.

14. The device of claim 13, wherein a molecule of the patterning material comprises a first moiety and a second moiety, and the majority of molecules of the patterning material are oriented such that one of the first, and second, moieties, are oriented toward an exposed layer surface of the patterning coating.

15. The device of claim 14, wherein the first moiety of the molecule has a critical surface tension that is at least that of a critical surface tension of the second moiety thereof and coupled thereto, such that the first moiety comprises a high(er) critical surface tension component and the second moiety comprises a low(er) critical surface tension component.

16. The device of claim 14 or 15, wherein a majority of the second moieties of the patterning material are oriented toward an exposed layer surface of the patterning coating, such that the exposed layer surface of the patterning coating presents a low(er) surface energy surface to the deposited material.

17. The device of any one of claims 14 through 16, wherein the underlying layer is an orientation layer that comprises an orientation material.

18. The device of claim 17, wherein the orientation material has a substantially high characteristic surface energy, and a majority of the first moieties of the patterning material are oriented toward an exposed layer surface of the orientation layer.

19. The device of claim 17 or 18, wherein at least one of: the orientation layer, and the orientation material has a surface energy of one of at least about: 30, 35, 50, 60, 70, 80, 100, 200, and 500, dynes / cm.

20. The device of any one of claims 17 through 19, wherein the orientation material comprises at least one of: a metal, a metallic material, a non-metallic material, a semiconducting material, an insulating material, an organic material, and an inorganic material.

21. The device of any one of claims 1 through 20, further comprising an emissive region comprising: a first electrode, a second electrode, and at least one semiconducting layer disposed between the first electrode and the second electrode; wherein the first electrode is disposed between the substrate and the at least one semiconducting layer.

22. The device of claim 21, wherein the first portion excludes a lateral aspect of the emissive region.

23. The device of any one of claims 1 through 22, wherein the first portion comprises a transmissive region configured to allow light to pass therethrough.

24. The device of any one of claims 21 through 23, wherein the second electrode comprises at least a part of the deposited layer as a layer thereof.

25. The device of any one of claims 21 through 24, wherein the first portion includes a lateral aspect of the emissive region.

26. The device of any one of claims 21 through 25, further comprising an auxiliary electrode comprising the deposited layer as a layer thereof.

27. The device of any one of claims 1 through 26, further comprising at least one island comprising the deposited material disposed on the exposed layer surface of the patterning coating in the first portion of the lateral aspect.

28. A patterning material having a bulk melting point, for use, in a layer having a film melting point that is greater than the bulk melting point, as a patterning coating adapted to impact a propensity of an evaporated flux of a deposited material to be deposited thereon, the patterning coating for disposition on an exposed layer surface of an underlying layer in a first portion of a lateral aspect of a layered semiconductor device, such that a deposited layer comprising the deposited material is deposited in a second portion of the lateral aspect, while an exposed layer surface of the patterning coating is substantially devoid of a closed coating of the deposited material.

29. The patterning material of claim 28, wherein a thickness of the patterning coating is no more than a threshold thickness, above which the film melting point of the patterning coating is substantially the same as the bulking melting point of the patterning material.

30. The patterning material of claim 29, wherein the thickness of the patterning coating is an average layer thickness thereof.

31. The patterning material of claim 29 or 30, wherein the threshold thickness of the patterning coating is one of at least about: 5, 6, 7, 8, 9, and 10, monolayers.

32. The patterning material of any one of claims 29 through 31, wherein the thickness of the patterning coating is one of between about: 1-5, 1-4, 1-3, and 1-2, monolayers.

33. The patterning material of any one of claims 29 through 32, wherein the thickness of the patterning coating is one of between about: 2-8, 2-7, 2-6, 3-6, and 3-5, nm.

34. The patterning material of any one of claims 28 through 33, wherein a difference between the film melting point and the bulk melting point is one of at least about: 5°C, 8°C, 10°C, 12°C, 15°C, 18°C, 20°C, 25°C, and 30°C.

35. The patterning material of any one of claims 28 through 34, wherein the film melting point of the patterning coating is one of at least about: 80°C, 85°C, 90°C, 95°C, 100°C, 105°C, 110°C, 120°C, and 130°C.

36. The patterning material of any one of claims 28 through 35, wherein the bulk melting point of the patterning material is one of no more than about: 100°C, 95°C, 90°C, 85°C, 80°C, 75°C, and 70°C.

37. The patterning material of any one of claims 28 through 36, wherein the patterning material comprises a polymeric material.

38. The patterning material of any one of claims 28 through 37, wherein the patterning material comprises an oligomeric material.

39. The patterning material of any one of claims 28 through 38, wherein a molecule of the patterning material has a molecular size of one of at least about: 4, 5, 6, 8, 10, 12, 15, and 18, angstroms.

40. The patterning material of any one of claims 28 through 39, comprising a phosphazene group.

41. The patterning material of any one of claims 28 through 40, comprising a cyclophosphazene group.

42. The patterning material of any one of claims 28 through 41, comprising at least one of a: F-containing, and Si-containing, group.

43. The patterning material of any one of claims 28 through 42, comprising a siloxane group.

44. The patterning material of any one of claims 28 through 43, wherein a majority of molecules of the patterning material in the patterning coating align in an ordered orientation.

45. The patterning material of claim 44, wherein a molecule of the patterning material comprises a first moiety and a second moiety, and the majority of molecules of the patterning material are oriented such that one of the first, and second, moieties, are oriented toward an exposed layer surface of the patterning coating.

46. The patterning material of claim 45, wherein the first moiety of the molecule has a critical surface tension that is at least that of a critical surface tension of the second moiety thereof and coupled thereto, such that the first moiety comprises a high(er) critical surface tension component and the second moiety comprises a low(er) critical surface tension component.

47. The patterning material of claim 45 or 46, wherein a majority of the second moieties of the patterning material are oriented toward an exposed layer surface of the patterning coating, such that the exposed layer surface of the patterning coating presents a low(er) surface energy surface to the deposited material.

48. The patterning material of any one of claims 28 through 47, wherein at least one island comprising the deposited material is disposed on the exposed layer surface of the patterning coating in the first portion of the lateral aspect.

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