Method for manufacturing semiconductor device, method for determining identity of semiconductor device, and system for manufacturing semiconductor device

Abstract

Disclosed is a method for manufacturing a semiconductor device, the method including: a base layer formation step for forming a base layer, which is formed of a curable resin composition, on a semiconductor base material; an ink marking step for applying an identity determination mark onto the base layer with an ink, the identity determination mark being used for determination of the identity of a semiconductor device; and a curing step for curing the base layer after the ink marking step.

Description

Semiconductor device manufacturing method, semiconductor device identity determination method, and semiconductor device manufacturing system

[0001] The present invention relates to a method for manufacturing a semiconductor device, a method for determining the identity of a semiconductor device, and a system for manufacturing a semiconductor device.

[0002] In the field of semiconductor devices, the distribution of counterfeit products has become a problem. Therefore, there is a demand for technology that can determine whether a circulating product is identical to a genuine product. To determine the identity, it is conceivable to attach a unique mark (hereinafter referred to as an identity determination mark) to a semiconductor device in advance.

[0003] In relation to the above, Patent Document 1 (JP 2007-242973 A) describes a semiconductor device having a structure in which a semiconductor circuit is sealed with a sealing resin, the semiconductor device having a semiconductor circuit and a sealing resin with a mottled pattern on at least the surface that differs for each individual device.

[0004] Japanese Patent Application Laid-Open No. 2007-242973

[0005] The present inventors are considering using marks formed with ink as marks for determining identity. Even if marks formed with ink have the same shape when observed visually, when observed under magnification, each mark has a unique shape. Taking advantage of this phenomenon, the present inventors are considering using magnified images of marks formed with ink to determine identity.

[0006] On the other hand, marks formed using ink have problems with fixability.

[0007] SUMMARY OF THE INVENTION It is therefore an object of the present invention to provide a technique capable of improving the fixability of an identity determination mark applied with ink in a semiconductor device.

[0008] The present inventors have discovered that the above-mentioned problems can be solved by devising the order of marking steps in the manufacturing process of semiconductor devices.

[0009] That is, in one aspect, the present invention relates to a method for manufacturing a semiconductor device, which includes an underlayer forming step of forming an underlayer made of a curable resin composition on a semiconductor substrate, an ink marking step of applying an identity determination mark to the underlayer using ink to determine the identity of the semiconductor device, and a curing step of curing the underlayer after the ink marking step.

[0010] In another aspect, the present invention relates to a method for determining identity of a semiconductor device, the method comprising the steps of: manufacturing an authentic semiconductor device using the manufacturing method described above; capturing an image of an identity determination mark during or after manufacturing the authentic product and generating authentic product data indicating the identity determination mark of the authentic product; capturing an image of the identity determination mark of a semiconductor device to be determined and generating target product data indicating the identity determination mark of the target product; and determining whether the target product is identical to the authentic product based on the authentic product data and the target product data.

[0011] In yet another aspect, the present invention relates to a semiconductor device manufacturing system, comprising: an underlayer forming device that forms an underlayer made of a curable resin composition on a semiconductor substrate; and an ink marking device that applies an identity determination mark, which is used to determine the identity of a semiconductor device, to the underlayer using ink.

[0012] Fig. 1 is a schematic diagram showing a semiconductor device according to an embodiment. Fig. 2 is a diagram showing an example of an identity determination mark. Fig. 3 is a flowchart showing an example of a method for manufacturing a semiconductor device according to an embodiment. Fig. 4 is a schematic diagram showing an example of a method for manufacturing a semiconductor device. Fig. 5 is a configuration diagram showing an example of a system for manufacturing a semiconductor device.

[0013] Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

[0014] (1) Semiconductor Device Fig. 1 is a schematic diagram showing a semiconductor device 1 according to this embodiment. The semiconductor device 1 has a semiconductor substrate 2 and an underlayer 3 provided on the semiconductor substrate 2. An identity determination mark 4 is provided on the underlayer 3. The semiconductor device 1 is, for example, a semiconductor chip.

[0015] Fig. 2 is a diagram showing an example of the identity determination mark 4. Note that Fig. 2 also shows an enlarged view of a partial area of ​​the identity determination mark 4.

[0016] The identity determination mark 4 is a mark applied with ink. The identity determination mark 4 is used to determine whether the semiconductor device 1 is the same as a genuine product. As described above, even if marks applied with ink have the same shape when visually inspected, they have different shapes when observed under magnification. For example, when ink is supplied onto a substrate, the supplied ink wets and spreads to a certain extent. The way the ink wets and spreads is random. Furthermore, when a mark is applied using an inkjet method, for example, the ink is supplied onto the substrate as droplets. The landing positions of the droplets at this time may be random when observed under magnification.

[0017] The randomness described above is used to determine identity. For example, when the semiconductor device 1 is manufactured, an enlarged image of the identity determination mark 4 is acquired in advance, and the image is stored as authentic product data. After the semiconductor device 1 is distributed on the market, to verify whether the distributed product is identical to the authentic product, an enlarged image of the identity determination mark 4 of the distributed product is acquired. Then, the image of the distributed product is compared with the pre-stored authentic product data as the product data to be determined. This makes it possible to determine whether the distributed product is identical to the authentic product. Note that the authentic product data and the product data to be determined may be image data itself, but are not necessarily image data itself. For example, the authentic product data and the product data to be determined may be data indicating feature amounts extracted from image data.

[0018] Furthermore, the use of the randomness of the shape of the identity determination mark 4 is not limited to the randomness of the shape of the identity determination mark 4. For example, if the ink contains a particulate pattern forming material, when the identity determination mark 4 is observed under magnification, a random bright spot pattern due to the reflected light of the pattern forming material may be obtained. In this way, the randomness of the bright spot pattern may be used to determine identity.

[0019] The identity determination mark 4 may be a mark that, when observed visually, contains some information such as a lot number, or may be a mark that does not indicate any meaning. In other words, the determination of identity using the identity determination mark 4 is made not by the identification symbol that the mark constitutes, but by comparing information obtained from the unique image of the mark of the genuine product with information obtained from the image of the mark of the product to be determined.

[0020] (2) Semiconductor Device Manufacturing Method and Identity Determination Method Next, a semiconductor device manufacturing method and identity determination method according to this embodiment will be described. Fig. 3 is a flowchart showing an outline of the method for manufacturing the semiconductor device 1 according to this embodiment.

[0021] In this embodiment, as described above, the identity determination marks 4 are formed using ink to achieve randomness. However, identity determination marks 4 formed using ink have a problem with fixation. In particular, when an enlarged image is used to determine identity, the identity determination marks 4 are required to have high fixation so that peeling is not observed even when viewed as an enlarged image. Therefore, the inventors conducted research to improve the fixation of the identity determination marks 4. As a result, they found that fixation can be improved by forming a curable base layer 3 and then performing ink marking before the base layer 3 hardens. Before the base layer 3 hardens, the base layer 3 has a certain degree of fluidity. Therefore, if ink is supplied to the base layer 3 before hardening, the ink and the base layer 3 easily penetrate each other. As a result, it is believed that the ink is more likely to bond to the base layer 3, thereby improving the fixation of the identity determination marks 4.

[0022] That is, as shown in FIG. 3 , the manufacturing method of the semiconductor device 1 according to this embodiment includes an underlayer forming step (step S1), an ink marking step (step S2), and a curing step (step S3). In the underlayer forming step (S1), an underlayer 3 is formed on the semiconductor substrate 2 using a curable resin composition. In the ink marking step (S2), an identity determination mark 4 is applied to the underlayer 3 using ink. In the curing step (S3), the underlayer 3 is cured. The curing step (S3) is performed after the ink marking step (S2). According to this method, since the curing step (S3) is performed after the ink marking step (S2), the fixation of the identity determination mark 4 to the underlayer 3 can be improved.

[0023] The above is an outline of this embodiment. Next, the details of this embodiment will be described with reference to a specific example. Figure 4 is a diagram showing a specific example of a method for manufacturing the semiconductor device 1.

[0024] (Step S1) Formation of Underlayer First, as shown in Fig. 4A, a semiconductor substrate 2 is prepared. The semiconductor substrate 2 is, for example, a semiconductor wafer after the backside has been ground.

[0025] 4(b), an underlayer 3 is formed on the semiconductor substrate 2. The underlayer 3 may be any layer that can serve as a base for the identity determination mark 4. In this embodiment, the underlayer 3 is a resin layer (rear surface resin layer) provided on the rear surface of the semiconductor substrate 2 (the surface opposite to the circuit formation surface).

[0026] The underlayer 3 is formed from a curable resin composition. For example, a film for forming an underlayer (a film for a back surface resin layer) containing the curable resin composition is laminated on the back surface of the semiconductor substrate 2. In this way, the underlayer 3 can be formed.

[0027] The curing type of the curable resin composition forming the underlayer 3 may be thermosetting, energy ray curable (e.g., UV curable), or both. Since a film for forming an underlayer formed from an energy ray curable curable resin composition may need to achieve both energy ray transparency and optical properties required for the underlayer, the curable resin composition is preferably thermosetting.

[0028] The detailed composition of the underlayer 3 will be described later with an example.

[0029] (Step S2) Ink Marking Next, as shown in Fig. 4(c), the identity determination mark 4 is applied to the base layer 3. As described above, the identity determination mark 4 is formed with ink. That is, the identity determination mark 4 is formed by applying ink onto the base layer 3.

[0030] The method for applying the identity determination mark 4 is not particularly limited. Examples of application methods include inkjet methods and gravure coating methods. Among these, the inkjet method is preferred. When the inkjet method is used, ink droplets 6 are sprayed onto the underlayer 3, as shown in FIG. 4( c). At this time, the landing positions of the droplets 6 may be orderly or random when viewed under magnification. Furthermore, after landing, the ink spreads in a random shape. Therefore, the shape of the identity determination mark 4 observed under magnification tends to be unique. As a result, identity determination using the identity determination mark 4 becomes easier.

[0031] As the ink, preferably, a curable ink is used. The ink may be a heat-curable ink or an energy ray-curable ink. Preferably, the ink is an energy ray-curable ink. More preferably, the ink is a UV-curable ink. Furthermore, a particulate pattern-forming substance is added to the ink as needed.

[0032] When a curable ink is used, the ink is preferably cured immediately after application (before the underlayer 3 is cured).

[0033] In a more preferred embodiment, the curable resin composition constituting the underlayer 3 is a thermosetting resin composition, while the ink is an energy ray-curable composition. The ink is cured before the underlayer 3 is cured (S3).

[0034] (Imaging) Next, as shown in FIG. 4(d), the identity determination mark 4 is imaged. The identity determination mark 4 is imaged through a microscope. The size of the imaged area is not particularly limited. For example, the size of the imaged area is a size that includes an area with one side measuring 10 to 1000 μm.

[0035] The microscope used for imaging is typically an optical microscope, and the magnification when imaging using an optical microscope is, for example, 20 to 500 times.

[0036] The image of the identity determination mark 4 obtained by imaging and the feature amounts extracted from the image are stored, for example, in a server (not shown) as genuine product data indicating the identity determination mark of a genuine product.

[0037] (Step S3) Curing Next, as shown in FIG. 4( e), the base layer 3 is cured by a method according to the curing type of the curable resin composition. That is, if the curing type of the base layer 3 is a thermosetting type, a thermosetting process is carried out. If the curing type of the base layer 3 is an energy ray curing type, a curing process by energy ray irradiation is carried out.

[0038] When the curing type of the underlayer 3 is a thermosetting type, the heating temperature in this step is, for example, 80 to 200° C., preferably 100 to 160° C. The heating time is, for example, 30 minutes to 5 hours, preferably 1 to 3 hours.

[0039] (Dicing, etc.) After the base layer 3 has hardened, necessary processing is carried out to obtain the semiconductor device 1. In the example shown in FIG. 4, a dicing step is carried out as shown in FIG. 4(f). In the dicing step, the semiconductor substrate 2 is placed on a dicing sheet 10. The semiconductor substrate 2 is attached to the dicing sheet 10, for example, with the base layer 3 facing the dicing sheet 10. In other words, the identity determination mark 4 is attached to the dicing sheet 10 so that it is in contact with the dicing sheet 10. Then, the semiconductor substrate 2 is divided (diced) into individual pieces using a blade 9.

[0040] After singulation, each semiconductor chip 11 is picked up from the dicing sheet 10, as shown in FIG. 4( g). If the fixation of the identity determination marks 4 is low, there is a possibility that the identity determination marks 4 will adhere to the dicing sheet 10 and peel off from the base layer 3 during pick-up. However, according to this embodiment, the identity determination marks 4 have high fixation. Therefore, even if the semiconductor substrate 2 is attached so that the identity determination marks 4 are in contact with the dicing sheet 10, the identity determination marks 4 are unlikely to peel off during pick-up.

[0041] After being picked up, reliability tests and the like are carried out as necessary. After undergoing reliability tests and the like, the semiconductor chips are distributed in the market as semiconductor devices.

[0042] After a semiconductor device is distributed to the market, if it is desired to verify whether the semiconductor device is genuine, an image of the identity determination mark of the distributed product (the product to be judged) is taken, as shown in FIG. 4( h). The identity determination mark of the distributed product is imaged using a microscope, just like the image of the genuine product. Then, it is determined whether the distributed product is identical to the genuine product based on data showing the image of the identity determination mark of the distributed product or feature amounts extracted from the image (data of the product to be judged) and the pre-generated genuine product data.

[0043] The above is the semiconductor device manufacturing method and semiconductor identity determination method according to this embodiment. According to this embodiment, the ink marking is performed before the underlayer 3 hardens, which improves the fixation of the identity determination mark 4. This allows for reliable identity determination.

[0044] (3) Semiconductor Device Manufacturing System The above-described semiconductor device manufacturing method can be realized, for example, by a semiconductor device manufacturing system. Fig. 5 is a configuration diagram showing an example of a semiconductor device manufacturing system 20. This semiconductor device manufacturing system 20 includes an underlayer forming device 21, an ink marking device 22, an imaging device 23, and a curing device 24.

[0045] The base layer forming device 21 is configured to form the base layer 3 on the semiconductor substrate 2. The base layer forming device 21 is, for example, a laminating device configured to laminate a base layer forming film (a back surface resin layer film) onto the back surface of the semiconductor substrate 2.

[0046] The ink marking device 22 is configured to apply an identity determination mark with ink onto the base layer 3. The ink marking device 22 is, for example, an inkjet printing device.

[0047] The imaging device 23 includes a microscope and is configured to capture an image of a minute region of the identity determination mark 4 through the microscope. The imaging device 23 is, for example, a digital imaging device equipped with an optical microscope.

[0048] The semiconductor device manufacturing system of this embodiment may also include a feature calculation device (not shown) that calculates predetermined feature amounts from the image captured by the imaging device 23. Examples of feature amounts calculated by the feature calculation device include coordinates indicating the outline of the shape of the identity determination mark 4 magnified by a microscope, and coordinates of each bright spot in the bright spot pattern indicated by the identity determination mark 4. Such feature amounts are used as the feature amounts extracted from the image of the genuine product described above.

[0049] The curing device 24 is configured to cure the base layer 3. When the curing type of the base layer 3 is a thermosetting type, the curing device 24 is a heating device. When the curing type of the base layer 3 is an energy ray curing type (e.g., a UV curing type), the curing device 24 is an energy ray irradiation device (e.g., a UV irradiation device).

[0050] Some of the devices included in the above-described manufacturing system 20 may be provided as an integrated unit. For example, the base layer forming device 21 and the ink marking device 22 may be provided as an integrated unit. Use of such a manufacturing system makes it possible to perform processes from base layer formation to ink marking inline, thereby improving productivity. Furthermore, the base layer forming device 21, the ink marking device 22, and the imaging device 23 may be provided as an integrated unit, or the base layer forming device 21, the ink marking device 22, the imaging device 23, and the feature calculation device may be provided as an integrated unit.

[0051] When the curable resin composition forming the base layer 3 is thermosetting, heating in the heating device serving as the curing device 24 often requires approximately 30 minutes to 5 hours. Therefore, considering the relatively short processing times of the base layer forming device 21 and the ink marking device 22, it is difficult to integrate the curing device 24 with the base layer forming device 21 and the ink marking device 22. Therefore, when the base layer 3 is cured prior to the ink marking, the curing device 24, through which the semiconductor substrate 2 passes between the base layer forming device 21 and the ink marking device 22, must be taken offline, which may prevent the base layer forming device 21 and the ink marking device 22 from being integrated in-line. On the other hand, when the base layer 3 is cured after the ink marking, the base layer 3 can be cured offline after the base layer formation and ink marking are performed in-line, making it easy to integrate the base layer forming device 21 and the ink marking device 22.

[0052] (4) Others In the present embodiment, an image of the identity determination mark 4 for a genuine product (see FIG. 4(d)) is described as being taken between the ink marking step (S2: FIG. 4(c)) and the curing step (S3: FIG. 4(e)). However, the image of the identity determination mark 4 does not necessarily have to be taken before the curing step (S3). The image of the identity determination mark 4 may be taken at any stage after the curing step (S3: FIG. 4(e)). If the base layer 3 is thermosetting, the image of the identity determination mark 4 is taken before the curing step, which avoids the need for a curing step, which is difficult to implement in-line, and therefore, it is easy to integrate the base layer forming device 21, the ink marking device 22, and the imaging device 23 in the above-described semiconductor device manufacturing system.

[0053] In the present embodiment, the case where the base layer 3 is a back surface resin layer formed on the back surface of the semiconductor substrate 2 has been described. However, the base layer 3 is not limited to a back surface resin layer. For example, the base layer 3 may be an encapsulating resin layer used as a so-called encapsulating resin.

[0054] On the other hand, preferably, the base layer 3 is a back surface resin layer as described in the above embodiment. More preferably, the back surface resin layer is a resin layer formed by laminating a base layer-forming film (back surface resin layer film). Below, the back surface resin layer will be described in detail for the case where the base layer 3 is a back surface resin layer formed from a base layer-forming film.

[0055] (5) Underlayer (rear surface resin layer) The thickness of the rear surface resin layer is not particularly limited, but is, for example, 1 to 100 μm, and preferably 5 to 50 μm.

[0056] As described above, the curing type of the back surface resin layer may be a thermosetting type or an energy ray curing type, and is preferably a thermosetting type. An example of the composition of the back surface resin layer in the case of a thermosetting type will be described below. In this case, the back surface resin layer is formed from a thermosetting curable resin composition.

[0057] When the curable resin composition is thermosetting, the curable resin composition contains, for example, a polymer component (A), a thermosetting component (B), a curing accelerator (C), a silane coupling agent (D), and a colorant (E).

[0058] (A) Polymer Component Examples of the polymer component (A) include acrylic resins (e.g., resins obtained by addition polymerization of monomers containing at least an acrylic acid ester monomer), polyesters, urethane resins (e.g., resins having a urethane bond), acrylic urethane resins, silicone resins (e.g., resins having a siloxane bond), rubber resins (e.g., resins having a rubber structure), and phenoxy resins, with acrylic resins being preferred.

[0059] The content of the polymer component (A) is, for example, 5 to 50 mass %, preferably 10 to 40 mass %, and more preferably 15 to 35 mass %, based on the total mass of the curable resin composition excluding the solvent.

[0060] (B) Thermosetting Component Examples of the thermosetting component (B) include epoxy-based thermosetting resins, thermosetting polyimides, thermosetting polyurethanes, unsaturated polyesters, and silicone rubbers. Epoxy-based thermosetting resins are preferred.

[0061] The epoxy thermosetting resin may be, for example, one made of an epoxy resin (B1) and a thermosetting agent (B2).

[0062] Examples of the epoxy resin (B1) include bifunctional or higher functional epoxy compounds such as polyfunctional epoxy resins, biphenyl compounds, bisphenol A diglycidyl ether and its hydrogenated products, orthocresol novolac epoxy resins, dicyclopentadiene epoxy resins, biphenyl epoxy resins, bisphenol A epoxy resins, bisphenol F epoxy resins, and phenylene skeleton epoxy resins. Among these, it is preferable to use bisphenol A epoxy resins.

[0063] The thermosetting agent (B2) is a substance that functions as a curing agent for epoxy resins. Examples of thermosetting agents include compounds having at least two functional groups per molecule that can react with epoxy groups. Examples of such functional groups include phenolic hydroxyl groups, alcoholic hydroxyl groups, amino groups, carboxyl groups, and groups resulting from anhydridization of acid groups. Preferably, the thermosetting agent includes an amino-based curing agent having an amino group. Examples of amino-based curing agents include dicyandiamide.

[0064] The content of the thermosetting component (B) (e.g., the content of the epoxy resin (B1) and the thermosetting agent (B2)) is, for example, 5 to 30 mass %, preferably 15 to 20 mass %, based on the total mass of the curable resin composition excluding the solvent.

[0065] (C) Curing Accelerator Examples of the curing accelerator (C) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which at least one hydrogen atom is substituted with a group other than a hydrogen atom) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which at least one hydrogen atom is substituted with an organic group) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate. Preferably, the curing accelerator (C) contains 2-phenyl-4,5-dihydroxymethylimidazole.

[0066] The content of the curing accelerator (C) is, for example, 0.1 to 1 mass % based on the total mass of the curable resin composition excluding the solvent.

[0067] (D) Silane Coupling Agent Examples of the silane coupling agent (D) include 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, 2-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, 3-methacryloyloxypropyltrimethoxysilane, 3-aminopropyltrimethoxysilane, 3-(2-aminoethylamino)propyltrimethoxysilane, 3-(2-amino Examples of suitable silane coupling agents include 3-(ethylamino)propylmethyldiethoxysilane, 3-(phenylamino)propyltrimethoxysilane, 3-anilinopropyltrimethoxysilane, 3-ureidopropyltriethoxysilane, 3-mercaptopropyltrimethoxysilane, 3-mercaptopropylmethyldimethoxysilane, bis(3-triethoxysilylpropyl)tetrasulfane, methyltrimethoxysilane, methyltriethoxysilane, vinyltrimethoxysilane, vinyltriacetoxysilane, and imidazole silane. Preferably, the silane coupling agent (D) contains 3-glycidoxypropyltrimethoxysilane.

[0068] The content of the silane coupling agent (D) is, for example, 0.1 to 1 mass % based on the total mass of the curable resin composition excluding the solvent.

[0069] (E) Colorant As the colorant (E), inorganic pigments, organic pigments, organic dyes, etc. can be used. Among these, inorganic pigments are preferred because they are less prone to fading. Examples of inorganic pigments include carbon black, cobalt-based pigments, iron-based pigments, chromium-based pigments, titanium-based pigments, vanadium-based pigments, zirconium-based pigments, molybdenum-based pigments, ruthenium-based pigments, platinum-based pigments, ITO (indium tin oxide)-based pigments, and ATO (antimony tin oxide)-based pigments. Preferably, the colorant (E) contains carbon black.

[0070] The content of the colorant (E) is, for example, 0.1 to 10 mass %, preferably 0.5 to 5 mass %, based on the total mass of the curable resin composition excluding the solvent.

[0071] Next, in order to explain the present invention in more detail, examples carried out by the present inventors will be described, but the present invention should not be construed as being limited to the following examples.

[0072] (Example) <Production of film for back surface resin layer> (Preparation of composition for back surface resin layer) The following raw materials were mixed with methyl ethyl ketone solvent and stirred for 60 minutes at 23° C. to prepare a composition for back surface resin layer having an active ingredient (component other than the solvent) content of 52 mass %. In the following description, the amount of each component indicates the amount of the active ingredient. (1) Acrylic polymer (20 parts by mass): acrylic polymer (weight average molecular weight: 600,000) obtained by copolymerizing 15 parts by mass of n-butyl acrylate, 10 parts by mass of methyl methacrylate, 60 parts by mass of methyl acrylate, and 15 parts by mass of 2-hydroxyethyl acrylate. (2) Bisphenol A type liquid epoxy resin (15 parts by mass): "BPA328" manufactured by Nippon Shokubai Co., Ltd. (3) Bisphenol A type epoxy resin (1.8 parts by mass): "jER1055" manufactured by Mitsubishi Chemical Corporation (4) Dicyandiamide (0.45 parts by mass): heat-activated latent epoxy resin curing agent, "ADEKA Hardener EH-3636AS" manufactured by ADEKA Corporation (5) 2-phenyl-4,5-dihydroxymethylimidazole (0.45 parts by mass): "Curesol 2PHZ" manufactured by Shikoku Chemical Industry Co., Ltd. (6) Spherical silica filler (60 parts by mass): Admatechs "SC105G-MMQ: spherical silica" (average particle size 0.3 μm) (7) Silane coupling agent: 3-glycidoxypropyltrimethoxysilane (3-glycidyloxypropyltrimethoxysilane) (0.4 parts by mass), Shin-Etsu Chemical Co., Ltd. "KBM403" (8) Colorant: Carbon black (1.9 parts by mass), Mitsubishi Chemical Corporation "MA600B" (average particle size 28 nm)

[0073] (Formation of film for back surface resin layer) A release film having a release-treated surface was prepared. Then, the composition for back surface resin layer prepared above was coated onto the release-treated surface using a knife coater. After coating, the composition for back surface resin layer was dried at 110°C for 2 minutes. The thickness of the composition for back surface resin layer after drying was 25 µm. Furthermore, the release-treated surface of another release film was attached to the composition for back surface resin layer to prepare a film for back surface resin layer (wafer back surface protection tape) having a configuration in which the composition for back surface resin layer was sandwiched between two release films.

[0074] (Production of Silicon Chip with Backside Resin Layer) A 6-inch silicon wafer (thickness: 350 μm) having a #2000 polished surface was prepared as a semiconductor substrate. One release film was peeled off from the film for the backside resin layer, and the film for the backside resin layer was attached to the silicon wafer, forming a backside resin layer (uncured underlayer) on the semiconductor substrate. Specifically, the film for the backside resin layer was attached by thermal lamination at a roll temperature of 70°C and a roll speed of 0.3 m / min. The other release film included in the film for the backside resin layer was peeled off and removed. A 5 μm thick layer of white ink (Agfa, Wh04) was applied to the exposed backside resin layer using an applicator. Furthermore, a UV irradiator (CSN2-40, GS Ayusa Co., Ltd.) was used to apply a UV irradiance (360 mJ / cm 2 The white ink was irradiated with UV light at a temperature of 100°C and an irradiation speed of 13 m / min to harden the white ink. A thermal curing process (130°C, 2 hours) was then carried out to harden the rear surface resin layer. Using the above procedure, a semiconductor wafer coated with white ink was produced.

[0075] (Comparative Example) A semiconductor wafer according to the comparative example was fabricated using the same procedure as in the example. However, the order of the application of the white ink and the thermal curing process (130°C, 2 hours) was reversed. That is, a rear surface resin layer (underlayer) was formed on the semiconductor substrate, the other release film remaining on the rear surface resin layer was peeled off and removed, and then the thermal curing process (130°C, 2 hours) was carried out. Then, after the thermal curing process, the application of the white ink and UV curing were carried out.

[0076] (Fixation Test) A fixation test of the white ink was conducted for the Examples and Comparative Examples. Specifically, first, the shape of the white ink was photographed with a microscope (Keyence Digital Microscope VHX-7000) at 20x magnification to obtain an initial image. The image was taken under a side illumination (total illumination) environment. Next, dicing tape (D-485H, manufactured by Lintec Corporation) was laminated on the surface opposite to the surface on which the white ink was formed. Then, using a dicer (DFD6362, manufactured by Disco Corporation), 1 mm-wide cuts were made in the semiconductor wafer from the opposite side of the dicing tape (the side on which the white ink was formed) in a grid pattern (10 columns, 10 rows, 100 squares) that did not reach the back surface. In other words, the semiconductor wafer was half-cut. After half-cutting, dicing tape (D-686H, manufactured by Lintec Corporation) was attached to the surface on which the white ink was formed. Next, the semiconductor wafer was left to stand for 10 minutes. After leaving it to stand, UV light was irradiated onto the surface of the dicing tape opposite to the surface facing the semiconductor wafer to make the dicing tape peelable. After UV irradiation, the dicing tape was peeled off from the surface of the semiconductor wafer on which the white ink had been formed, so that the peeling angle was perpendicular. After peeling of the dicing tape, an image of the white ink was taken with a microscope and compared with the initial image to observe whether or not there was any ink chipping. If no ink chipping was observed, it was marked as "Good", and if ink chipping was observed, it was marked as "Poor".

[0077] (Results and Discussion) The results are shown in Table 1.

[0078]

[0079] As shown in Table 1, the Examples had higher fixability than the Comparative Examples. In the Comparative Examples, the ink peeled off from the base layer because the base layer was in a cured state when the ink was applied. In contrast, in the Examples, the ink was applied to an uncured base layer (back surface resin layer). As a result, high fixability was obtained.

[0080] (Supplementary Note) The main features included in the present invention will be summarized below as supplementary notes.

[0081] (Note 1) A method for manufacturing a semiconductor device, comprising: an underlayer formation step (S1) of forming an underlayer 3 made of a curable resin composition on a semiconductor substrate 2; an ink marking step (S2) of applying an identity determination mark 4 to the underlayer 3 using ink, the identity determination mark 4 being used to determine the identity of the semiconductor device 1; and a curing step (S3) of curing the underlayer 3 after the ink marking step.

[0082] (Supplementary Note 2) The method for manufacturing a semiconductor device according to Supplementary Note 1, wherein the base layer forming step (S1) includes a step of forming the base layer 3 on the back surface of the semiconductor substrate 2.

[0083] (Appendix 3) A method for manufacturing a semiconductor device according to appendix 1 or 2, wherein the base layer forming step (S1) includes a step of forming the base layer 3 by laminating a base layer forming film containing a curable resin composition onto the back surface of the semiconductor substrate.

[0084] (Appendix 4) A method for manufacturing a semiconductor device according to any one of Appendices 1 to 3, wherein the curable resin composition has thermosetting properties, and the curing step (S3) includes a step of curing the underlayer 3 by thermal curing.

[0085] (Appendix 5) A manufacturing method for a semiconductor device according to any one of Appendices 1 to 4, wherein the ink is curable, and the ink marking step (S2) includes a step of applying the ink onto the underlayer 3 and a step of curing the applied ink.

[0086] (Appendix 6) A method for determining the identity of a semiconductor device, comprising: a step of manufacturing an authentic semiconductor device using a manufacturing method described in any one of Appendices 1 to 5; a step of imaging an identity determination mark during or after the manufacturing of the authentic product and generating authentic product data indicating the identity determination mark of the authentic product; a step of imaging an identity determination mark of a semiconductor device to be determined and generating target product data indicating the identity determination mark of the target product; and a step of determining whether the target product is identical to the authentic product based on the authentic product data and the target product data.

[0087] (Appendix 7) An identity determination method as described in Appendix 6, wherein the process of generating genuine product data and the process of generating product data to be evaluated each include a process of capturing an image of an identity determination mark via a microscope.

[0088] (Appendix 8) A semiconductor device manufacturing system comprising: an underlayer forming device 21 that forms an underlayer formed from a curable resin composition on a semiconductor substrate; and an ink marking device 22 that applies an identity determination mark using ink onto the underlayer, which is used to determine the identity of the semiconductor device.

[0089] (Supplementary Note 9) The semiconductor device manufacturing system according to Supplementary Note 8, further comprising a curing device 24 that hardens the base layer to which the identity determination mark is applied.

[0090] (Supplementary Note 10) The semiconductor device manufacturing system according to claim 8 or 9, further comprising an imaging device 23 for imaging the identity determination mark.

[0091] (Supplementary Note 11) The semiconductor device manufacturing system according to claim 10, further comprising a feature amount calculation device that calculates feature amounts from the image captured by the imaging device 23.

[0092] (Supplementary Note 12) A semiconductor device manufacturing system according to any one of Supplementary Notes 8 to 11, wherein the underlayer forming device 21 and the ink marking device 22 are integrated.

[0093] (Supplementary Note 13) The semiconductor device manufacturing system according to claim 10, wherein the underlayer forming device 21, the ink marking device 22, and the imaging device 23 are integrated into one unit.

[0094] (Supplementary Note 14) The system for manufacturing a semiconductor device according to Supplementary Note 12 or 13, wherein the curable resin composition has thermosetting properties.

[0095] (Citation by Reference) This application claims priority based on Japanese Patent Application No. 2023-185889 (filing date: October 30, 2023) and Japanese Patent Application No. 2023-185890 (filing date: October 30, 2023), the contents of which are incorporated herein by reference.

[0096] 1... semiconductor device, 2... semiconductor substrate, 3... underlayer, 4... identity determination mark, 5... semiconductor wafer, 6... ink, 7... imaging device, 9... blade, 10... dicing tape, 11... semiconductor chip, 20... semiconductor device manufacturing system, 21... underlayer forming device, 22... ink marking device, 23... imaging device, 24... curing device

Claims

1. A method for manufacturing a semiconductor device, comprising: an underlayer forming step of forming an underlayer made of a curable resin composition on a semiconductor substrate; an ink marking step of applying an identity determination mark, which is used to determine the identity of a semiconductor device, to the underlayer using ink; and a curing step of curing the underlayer after the ink marking step.

2. A method for manufacturing a semiconductor device according to claim 1, wherein the base layer forming step includes a step of forming the base layer on a back surface of the semiconductor substrate.

3. A method for manufacturing a semiconductor device according to claim 1 or 2, wherein the base layer forming step includes a step of forming the base layer by laminating a base layer forming film containing the curable resin composition onto a rear surface of a semiconductor substrate.

4. A method for manufacturing a semiconductor device according to claim 1 or 2, wherein the curable resin composition has thermosetting properties, and the curing step includes a step of curing the underlayer by thermal curing.

5. A method for manufacturing a semiconductor device according to claim 1 or 2, wherein the ink is curable, and the ink marking step comprises the steps of applying the ink onto the underlayer, and curing the applied ink.

6. A method for determining the identity of a semiconductor device, comprising: a step of manufacturing an authentic semiconductor device using the manufacturing method described in claim 1 or 2; a step of imaging the identity determination mark during or after the manufacturing of the authentic product and generating authentic product data indicating the identity determination mark of the authentic product; a step of imaging the identity determination mark of a semiconductor device to be determined and generating target product data indicating the identity determination mark of the target product; and a step of determining whether the target product is identical to the authentic product based on the authentic product data and the target product data.

7. A method for determining identity as described in claim 6, wherein the process of generating genuine product data and the process of generating data on the product to be determined each include a process of capturing an image of the identity determination mark via a microscope.

8. A semiconductor device manufacturing system comprising: an underlayer forming device that forms an underlayer formed from a curable resin composition on a semiconductor substrate; and an ink marking device that applies an identity determination mark using ink onto the underlayer, the identity being used to determine the identity of a semiconductor device.

9. A semiconductor device manufacturing system according to claim 8, further comprising a curing device for curing the base layer to which the identity determination mark is applied.

10. A semiconductor device manufacturing system according to claim 8, further comprising an imaging device for imaging the identity determination mark.

11. A semiconductor device manufacturing system according to claim 10, further comprising a feature amount calculation device that calculates feature amounts from an image captured by the imaging device.

12. A semiconductor device manufacturing system according to claim 8, wherein the undercoat layer forming device and the ink marking device are integrated together.

13. A semiconductor device manufacturing system according to claim 10, wherein the undercoat layer forming device, the ink marking device and the imaging device are integrated together.

14. A system for manufacturing a semiconductor device according to claim 12 or 13, wherein the curable resin composition has thermosetting properties.

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