Batch-type atomic layer deposition apparatus

Abstract

The present invention relates to a batch-type atomic layer deposition apparatus for performing an atomic layer deposition process by generating remote plasma between a shower head and a cassette to cause a process gas to become a radical or ion state. The batch-type atomic layer deposition apparatus according to the present invention comprises: a reaction chamber inside of which is formed a constant reaction space blocked from the outside; a gas supply means which is installed on one side of the reaction chamber and supplies a process gas in one direction in the inside of the reaction chamber; a gas discharge means which is installed on the other side of the reaction chamber, facing the gas supply means, and which sucks in and discharges the gas supplied by the gas supply means and the gas in the reaction chamber; a cassette which is disposed between the gas supply means and the gas discharge means in the reaction chamber and loads a plurality of substrates in parallel with each other while being spaced apart at predetermined intervals; and a plasma generation unit which is installed between the gas supply means and the front end of the cassette and generates plasma in the front space of the cassette.

Description

Batch-type atomic layer deposition device

[0001] The present invention relates to a batch-type atomic layer deposition apparatus, and more particularly, to a batch-type atomic layer deposition apparatus for performing an atomic layer deposition process by generating a remote plasma between a showerhead and a cassette to cause a process gas to become a radical or ion state.

[0002] Atomic Layer Deposition (ALD) is similar to conventional chemical vapor deposition (CVD) in that it utilizes chemical reactions between gas molecules. However, unlike conventional CVD, which simultaneously injects multiple gas molecules into a chamber and deposits the resulting reaction products on a substrate, ALD injects a gas containing one source material into a chamber, chemically adsorbs it onto a heated substrate, and then injects a gas containing another source material into the chamber, depositing the product resulting from the chemical reaction between the source materials on the substrate surface.

[0003] This atomic layer deposition (ALD) method is currently widely used because it has the advantage of being able to deposit pure thin films with excellent step coverage characteristics and low impurity content.

[0004] Meanwhile, among atomic layer deposition devices, a batch type atomic layer deposition device that performs a deposition process simultaneously on multiple substrates to improve throughput is performed by loading multiple substrates into a reaction chamber with a cassette spaced apart at a certain interval, and repeating the cycle of providing source gas, purging, providing reaction gas, and purging several times.

[0005] However, as substrates become larger and have larger areas, the size of the process chamber and showerhead in existing plasma devices also becomes larger. As a result, as substrates become larger, the difference in the amount of gas injected and the unevenness in the density of plasma generation become more severe due to the difference in relative distance from the gas supply source, which causes a deterioration in the quality of the thin film deposited on the substrate.

[0006] The technical problem to be solved by the present invention is to provide a batch-type atomic layer deposition device for performing an atomic layer deposition process by generating a remote plasma between a showerhead and a cassette to cause a process gas to become a radical or ion state.

[0007] In order to solve the above-described technical problem, the batch-type atomic layer deposition apparatus according to the present invention comprises: a reaction chamber forming a predetermined reaction space inside the reaction chamber, which is sealed off from the outside; a gas supply means installed on one side of the reaction chamber and supplying a process gas in one direction inside the reaction chamber; a gas discharge means installed on the other side of the reaction chamber facing the gas supply means and sucking in and discharging a gas supplied by the gas supply means and a gas inside the reaction chamber; a cassette disposed between the gas supply means and the gas discharge means inside the reaction chamber and mounting a plurality of substrates in parallel with each other at a predetermined interval; and a plasma generation unit installed between the gas supply means and a front end of the cassette and generating plasma in a front space of the cassette.

[0008] And in the present invention, it is preferable that the plasma generation unit includes a gas distribution electrode installed between the gas supply means and the front end of the cassette to transmit gas supplied by the gas supply means in the direction of the cassette, and to which plasma generation power is applied or grounded; and a power supply means for grounding the gas supply means when plasma generation power is applied to the gas distribution electrode, and for grounding the gas distribution electrode when plasma generation power is applied to the gas supply means.

[0009] In addition, in the present invention, it is preferable that the gas distribution electrode is formed with a plurality of rows of gas injection holes or gas injection slits to match the positions of a plurality of substrates mounted on the cassette.

[0010] In addition, in the present invention, it is preferable that the gas injection hole has a structure in which a large-diameter gas passage hole is formed by penetrating the gas distribution electrode in the direction of the gas supply means, and a small-diameter gas passage hole having a smaller diameter than the large-diameter gas passage hole is formed by penetrating in the direction of the cassette.

[0011] In addition, in the present invention, it is preferable that the gas injection slit has a structure in which gas passage slits are formed at regular intervals on the gas distribution electrode in the direction of the gas supply means, and small-diameter gas passage holes having a diameter smaller than the gas passage slit interval are formed in a row along the gas passage slits in the direction of the cassette.

[0012] In addition, in the present invention, it is preferable that the power supply means applies plasma generation power to the gas supply means and grounds the gas distribution electrode.

[0013] In addition, in the present invention, it is preferable that the plasma generating unit has a gas injection hole formed by penetrating the showerhead panel of the gas supply means in the direction of the gas distribution electrode to form a large-diameter gas passage hole, and penetrating in the opposite direction of the gas distribution electrode to form a small-diameter gas passage hole having a smaller diameter than the large-diameter gas passage hole.

[0014] In addition, in the present invention, it is preferable that the plasma generating unit has a gas injection slit in which gas passage slits of a certain interval are formed by penetrating the showerhead panel of the gas supply means in the direction of the gas distribution electrode, and small-diameter gas passage holes having a diameter smaller than the gas passage slit spacing are formed by penetrating in the opposite direction of the gas distribution electrode.

[0015]

[0016] In addition, in the present invention, it is preferable that the plasma generation unit includes a power electrode installed at one end of the space between the gas supply means and the cassette and to which plasma generation power is applied; a ground electrode installed at a position facing the power electrode and grounded; and a power supply unit that applies plasma generation power to the power electrode.

[0017] In addition, in the present invention, it is preferable that the plasma generation unit includes a plurality of power electrodes installed at a predetermined interval in a direction matching the direction of the substrate mounted on the cassette in the space between the gas supply means and the cassette, to which plasma generation power is applied; a plurality of ground electrodes installed at a distance from the power electrodes between the plurality of power electrodes and grounded; and a power supply unit that applies plasma generation power to the power electrodes.

[0018] In addition, in the batch-type atomic layer deposition device according to the present invention, it is preferable that the power electrode and the ground electrode are placed at positions that coincide with the substrate mounting slit of the cassette.

[0019] In addition, in the present invention, it is preferable that the power electrode includes: a plurality of electrode plates installed at a predetermined interval; a connecting portion connecting the ends of the plurality of electrode plates and connecting the plurality of electrode plates and the power supply unit;

[0020] In addition, in the present invention, it is preferable that the ground electrode includes a plurality of ground plates installed at a predetermined interval; a ground connection portion connecting the ends of the plurality of ground plates and connecting the plurality of ground electrodes to the power supply portion;

[0021] In addition, in the batch-type atomic layer deposition device according to the present invention, it is preferable that the power electrode and the ground electrode have a plate shape as a whole to divide the space between the gas supply means and the cassette into a gas supply space that matches the substrate mounting space within the cassette.

[0022] In addition, in the present invention, it is preferable that the plasma is RF plasma, CCP plasma, ICP plasma, ECR plasma or Pulse DC plasma.

[0023] FIG. 1 is a cross-sectional view schematically illustrating the structure of a batch-type atomic layer deposition device according to one embodiment of the present invention.

[0024] FIG. 2 is a drawing showing the structure of a gas distribution plate and a gas injection hole according to one embodiment of the present invention.

[0025] FIG. 3 is a drawing showing the structure of a gas distribution plate and a gas injection slit according to another embodiment of the present invention.

[0026] FIG. 4 is a cross-sectional view and a plan view showing the structure of a gas distribution plate and a gas injection hole according to another embodiment of the present invention.

[0027] FIG. 5 is a cross-sectional view and a plan view showing the structure of a gas distribution plate and a gas injection slit according to another embodiment of the present invention.

[0028] FIG. 6 is a cross-sectional view and a plan view showing the structure of a gas supply means and a gas injection hole according to another embodiment of the present invention.

[0029] FIG. 7 is a cross-sectional view and a plan view showing the structure of a gas supply means and a gas injection slit according to another embodiment of the present invention.

[0030] FIG. 8 is a cross-sectional view schematically illustrating the structure of a batch-type atomic layer deposition device according to another embodiment of the present invention.

[0031] FIG. 9 is a cross-sectional view schematically illustrating the structure of a batch-type atomic layer deposition device according to another embodiment of the present invention.

[0032] FIG. 10 is a cross-sectional view showing the structure of a power electrode and a ground electrode according to another embodiment of the present invention.

[0033]

[0034] Hereinafter, specific embodiments of the present invention will be described in detail with reference to the attached drawings.

[0035]

[0036] The batch-type atomic layer deposition device (100) according to the present embodiment can be configured to include a reaction chamber (110), a gas supply means (120), a gas discharge means (130), a cassette (140), and a plasma generation unit (150), as illustrated in FIG. 1.

[0037] First, the reaction chamber (110) is a component that forms a certain reaction space inside that is blocked from the outside. In particular, in the present embodiment, the reaction chamber (110) has a structure that can block the reaction space from the outside space and create a vacuum state with very low pressure, and in order to secure stable process conditions of the reaction chamber (110), an external chamber (160) may be additionally provided outside the reaction chamber (110), as illustrated in FIG. 1.

[0038]

[0039] Next, the gas supply means (120), as illustrated in FIG. 1, is installed on one side of the reaction chamber (110) and is a component that supplies process gas in one direction inside the reaction chamber (110). That is, the gas supply means (120) supplies process gas and purge gas toward the cassette (140) so that an atomic layer deposition process can be performed on a plurality of substrates loaded inside the reaction chamber (110).

[0040] Therefore, in this embodiment, the gas supply means (120) may have, for example, a showerhead panel structure in which a plurality of gas injection holes are formed, in order to supply uniform gas.

[0041]

[0042] Next, the gas discharge means (130), as illustrated in FIG. 1, is installed on the other side of the reaction chamber (110) facing the gas supply means (120), and is a component that sucks in the gas supplied by the gas supply means (120) and the gas within the reaction chamber (110) and discharges them to the outside. That is, the gas discharge means (130) strongly sucks in the gas from the opposite side of the gas supply means (120) so that a uniform gas flow is formed within the reaction space within the reaction chamber (110), and sucks in the gas that has passed through the cassette loading space and discharges it to the outside.

[0043]

[0044] Next, as illustrated in FIG. 1, the cassette (140) is a component that is placed between the gas supply means (120) and the gas discharge means (130) within the reaction chamber (110), and that mounts a plurality of substrates (S) in parallel with each other at a certain interval. Accordingly, a plurality of substrates (S) are mounted in parallel with each other in the cassette (140), and the interval between each substrate is maintained at an interval suitable for performing an atomic layer deposition process.

[0045]

[0046] Next, the plasma generating unit (150), as illustrated in FIG. 1, is installed between the gas supply means (120) and the front end of the cassette (140), and is a component that generates plasma in the front space of the cassette (140). That is, the plasma generating unit (150) generates remote plasma in the space between the gas supply means (120) and the front end of the cassette (140), thereby changing the process gas supplied toward the cassette (140) by the gas supply means (120) into a radical or ion state, thereby allowing an atomic layer deposition process to be performed on the substrate (S).

[0047] To this end, in this embodiment, the plasma generation unit (150) may be configured with a gas distribution electrode (152) and a power supply means (not shown in the drawing), as specifically illustrated in FIG. 1. First, the gas distribution electrode (152) is installed between the gas supply means (120) and the front end of the cassette (140), and transmits the gas supplied by the gas supply means (120) toward the cassette, and is a component to which high-frequency power for plasma generation is applied.

[0048] Therefore, as illustrated in FIG. 2, the gas distribution electrode (152) is provided with a gas distribution plate (154) having a plurality of rows of gas injection holes (156) formed therein, so that the gas injected by the gas supply means (120) moves uniformly toward the cassette (140). At this time, it is preferable that the gas injection holes (156) have an arrangement that matches the positions of a plurality of substrates (S) mounted on the cassette (140), as illustrated in FIG. 2.

[0049] Meanwhile, as illustrated in Fig. 3, the gas distribution plate (154a) may be formed with multiple rows of gas injection slits (156a). The gas injection slits (156a) are formed as long gaps, and it is preferable that the plurality of gas injection slits (156a) have an arrangement that matches the positions of the plurality of substrates (S) mounted on the cassette (140).

[0050] And the power supply means (not shown in the drawing) is a component that applies plasma generation power to the gas distribution electrode (152) and grounds the gas supply means (120). That is, the power supply means is installed outside the reaction chamber (110), applies high-frequency power for plasma generation to the gas distribution electrode (152), and grounds the gas supply means (120) to create a plasma generation environment.

[0051]

[0052] Meanwhile, in this embodiment, the power supply means can also adjust the plasma generation environment by applying plasma generation power to the gas supply means (120) and grounding the gas distribution electrode (152).

[0053]

[0054] < Example 2 >

[0055] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas supply means, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0056] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the plasma generating unit is different from that of the first embodiment, and in particular, the structure of the gas injection hole (256) is different, which will be described in detail. Specifically, in the present embodiment, the gas injection hole (256) is implemented with a structure in which a large-diameter gas passage hole (256a) is formed by penetrating the gas distribution plate (254) in the direction of the gas supply means, and a small-diameter gas passage hole (256b) having a smaller diameter than the large-diameter gas passage hole (256a) is formed by penetrating in the direction of the cassette.

[0057] According to the gas injection hole (256) having this structure, there is an advantage in that a higher density plasma is formed by each gas injection hole.

[0058]

[0059] < Example 3 >

[0060] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas supply means, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0061] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the plasma generation unit is different from that of the first embodiment, and in particular, the structure of the gas injection slit (356) is different. Specifically, in the present embodiment, the gas injection slit (356) is implemented as a structure in which gas passage slits (356a) are formed at regular intervals in the gas distribution plate (354) in the direction of the gas supply means, and small-diameter gas passage holes (356b) having a diameter smaller than the width of the gas passage slit (356a) are formed in a row along the gas passage slit (356a) in the direction of the cassette, as illustrated in FIG. 5.

[0062] The gas injection slit (356) having this structure also has the advantage of forming a higher density plasma by each gas injection slit (356a) and gas passage hole (356b), similar to the gas injection hole (256) of Example 2.

[0063]

[0064] < Example 4 >

[0065] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0066] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the gas supply means and the plasma generation unit is different from that of the first embodiment, and in particular, the structure of the gas injection hole (456) is different. Specifically, in the present embodiment, the gas injection hole (456) is implemented with a structure in which, as illustrated in FIG. 6, a large-diameter gas passage hole (456a) is formed by penetrating the showerhead panel (422) of the gas supply means in the direction of the gas distribution electrode, and a small-diameter gas passage hole (456b) having a smaller diameter than the large-diameter gas passage hole (456a) is formed in communication with the large-diameter gas passage hole (456a) by penetrating in the opposite direction of the gas distribution electrode.

[0067] The gas injection hole (456) having this structure also has the advantage of forming a higher density plasma by each gas injection hole, similar to the gas injection hole (256) of Example 2.

[0068]

[0069] < Example 5 >

[0070] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0071] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the gas supply means and the plasma generation unit is different from that of the first embodiment, and in particular, the structure of the gas injection slit (556) is different. Specifically, in the present embodiment, the gas injection slit (556) is implemented as a structure in which, as illustrated in FIG. 7, the showerhead panel (522) of the gas supply means is engraved in the direction of the gas distribution electrode to form gas passage slits (556a) at regular intervals, and small-diameter gas passage holes (556b) having a diameter smaller than the gas passage slit interval are formed in a row along the gas passage slit in the opposite direction of the gas distribution electrode.

[0072] The gas injection slit (556) having this structure also has the advantage of forming a higher density plasma by each gas injection slit and gas passage hole, similar to the gas injection hole (256) of Example 2.

[0073]

[0074] < Example 6 >

[0075] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas supply means, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0076] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the plasma generation unit is different from that of Example 1, and specifically, as illustrated in FIG. 8, it may be configured to include a power electrode (652), a ground electrode (654), and a power supply unit (not illustrated in the drawing).

[0077] First, the power electrode (652) is installed at one end of the space between the gas supply means (620) and the cassette (640), and is a component to which high-frequency power for plasma generation is applied. In addition, the ground electrode (654), as illustrated in FIG. 8, is installed at a position facing the power electrode (652), and is a component to be grounded. Finally, the power supply unit applies high-frequency power for plasma generation to the power electrode (652), and thereby plasma is generated in the space between the power electrode (652) and the ground electrode (654).

[0078]

[0079]

[0080] < Example 7 >

[0081] The batch-type atomic layer deposition device according to the present embodiment can also be configured to include a reaction chamber, a gas supply means, a gas discharge means, a cassette, and a plasma generation unit, similar to that of Example 1. Since the reaction chamber, the gas supply means, the gas discharge means, and the cassette are substantially the same as those of Example 1, a repeated description thereof will be omitted.

[0082] However, in the batch-type atomic layer deposition device according to the present embodiment, the structure of the plasma generation unit is different from that of the first embodiment, and specifically, as illustrated in FIG. 9, it may be configured to include a power electrode (752), a ground electrode (754), and a power supply unit (not illustrated in the drawing).

[0083] First, the power electrode (752) is a component to which plasma generation power is applied, and is installed in multiple numbers at a certain interval in a direction that matches the direction of the substrate (S) mounted on the cassette (740) in the space between the gas supply means (720) and the cassette (740).

[0084] Here, the power electrode (752) is specifically configured to include a plurality of electrode plates (752a) and a connecting portion (752b), as illustrated in FIG. 10. The electrode plate (752a) is configured to include a plurality of conductive plates that are spaced apart from each other and installed in parallel, and the connecting portion (752b) connects the ends of the plurality of electrode plates (752a) and is a component that connects the plurality of electrode plates (752a) and the power supply portion.

[0085]

[0086] Next, as illustrated in FIG. 10, the ground electrode (754) is a component that is grounded and is installed in multiple numbers between the plurality of power electrodes (752) and spaced apart from the power electrode (752). Specifically, the ground electrode (754) is configured to include multiple ground plates (754b) and a ground connection portion (754b). Of course, the ground electrode (754) and the power electrode (752) are installed in an insulated state from each other.

[0087] First, as illustrated in FIG. 10, the plurality of ground plates (754a) are installed at a predetermined interval, and the interval between each ground plate (754a) is installed so as to match the interval between the electrode plates (752a), and each ground plate (754a) is installed at the center of the adjacent electrode plates (752a). In addition, the ground connection portion (754b) connects the ends of the plurality of ground plates (754a) and is a component that connects the plurality of ground plates (754a) and the power supply portion.

[0088] Accordingly, the spacing between the plurality of ground plates (754a) and the electrode plates (752a) is maintained constant, and the plurality of ground plates (754a) and the electrode plates (752a) divide the space between the gas supply means (720) and the cassette (740) into a gas supply space that matches the substrate mounting space within the cassette (740).

[0089] Next, the power supply unit is a component that applies plasma generation power to the power electrode (752) and grounds the ground electrode (754).

[0090]

[0091]

[0092] According to the present invention, a uniform atomic layer deposition process can be performed on a large number of large-area substrates during the manufacturing process of semiconductors, solar cells, display panels, etc., and in particular, the thin film properties are improved during the deposition process, so that it can be used in the semiconductor, solar cell, and display industries.

Claims

1. A reaction chamber forming a constant reaction space inside that is blocked from the outside; A cassette placed on one side of the inside of the above reaction chamber and mounting a plurality of substrates in parallel with each other at a set interval; A source supply means installed on the other side of the above reaction chamber and supplying a source gas in the direction of the cassette; A plasma generating unit installed between the source supply means and the cassette front end and generating plasma in the front space of the cassette; A precursor supply means installed on the side wall of the above reaction chamber and supplying a precursor gas to the space between the plasma generating unit and the cassette; A batch-type atomic layer deposition device, comprising: a gas exhaust means installed on the other side of the reaction chamber facing the source supply means, for sucking in and exhausting gas supplied by the source supply means and the precursor supply means and gas within the reaction chamber.

2. In the first paragraph, the plasma generating unit, A gas distribution electrode installed between the source supply means and the cassette front end, transmitting the source gas supplied by the source supply means toward the cassette, and to which plasma generation power is applied or grounded; A batch-type atomic layer deposition apparatus characterized by including a power supply means for grounding the source supply means when applying plasma generation power to the gas distribution electrode, and for grounding the gas distribution electrode when applying plasma generation power to the source supply means.

3. In the second paragraph, the gas distribution electrode comprises: A batch-type atomic layer deposition device characterized in that a plurality of rows of gas injection holes or gas injection slits are formed to match the positions of a plurality of substrates mounted on the cassette.

4. In the third paragraph, the gas injection hole, A batch-type atomic layer deposition device characterized in that the gas distribution electrode is formed with a large-diameter gas passage hole by penetrating in the direction of the source supply means, and a small-diameter gas passage hole having a smaller diameter than the large vertical gas passage hole is formed by penetrating in the direction of the cassette.

5. In the third paragraph, the gas injection slit, A batch-type atomic layer deposition device characterized in that gas passage slits are formed at regular intervals in the direction of the gas supply means, and small-diameter gas passage holes having a diameter smaller than the gas passage slit intervals are formed in a row along the gas passage slits in the direction of the cassette.

6. In the first paragraph, the plasma generating unit, A power electrode installed at one end of the space between the source supply means and the cassette, to which plasma generation power is applied; A ground electrode installed at a position facing the above power electrode and grounded; A batch-type atomic layer deposition device characterized by including a power supply unit that applies plasma generation power to the above power electrode.

7. In the first paragraph, the plasma generating unit, A plurality of power electrodes are installed at a set interval in a direction matching the direction of the substrate mounted on the cassette in the space between the source supply means and the cassette, and to which plasma generation power is applied; A plurality of ground electrodes are installed spaced apart from the power electrodes between the plurality of power electrodes and are grounded; A batch-type atomic layer deposition device characterized by including a power supply unit that applies plasma generation power to the power electrode.

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