Substrate processing apparatus and substrate processing method

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. This substrate processing apparatus comprises: a chamber; a susceptor on which at least three substrates are placed; and a gas injection unit that injects gas toward the plurality of substrates, wherein the gas injection unit comprises: a first injection unit that injects a source gas; a second injection unit that injects a reactant gas; a third injection unit that injects a surface treatment gas; and a plasma electrode that forms plasma in at least one of the first injection unit, the second injection unit, and the third injection unit.

Description

Substrate processing device and substrate processing method

[0001] The present invention relates to a substrate processing device that performs a processing process such as a deposition process on a substrate.

[0002] In general, in order to manufacture solar cells, semiconductor devices, flat panel displays, etc., a certain thin film layer, thin film circuit pattern, or optical pattern must be formed on the surface of a substrate. To this end, semiconductor manufacturing processes such as a thin film deposition process in which a thin film of a specific material is deposited on the substrate, a photo process in which a thin film is selectively exposed using a photosensitive material, and an etching process in which a pattern is formed by removing the thin film in the selectively exposed portion are performed.

[0003] The process of forming or removing a thin film on a substrate is accomplished by supplying a gas for forming a specific substance on the substrate, a gas for selectively removing the substance, or an equivalent substance. In particular, the process of forming a thin film can be accomplished by supplying a source gas and a reactant gas for forming a specific substance. In this case, the source gas and reactant gas can be supplied to the substrate simultaneously or sequentially with a time difference.

[0004] As semiconductor device manufacturing processes advance to fine processes, various methods are being applied to form uniform thin films or patterns on fine patterns formed on the surface of a substrate, one of which is atomic layer deposition. Atomic layer deposition (ALD) is a method that forms a thin film on a substrate by reacting a source gas and a reactant gas. Instead of supplying the source gas and reactant gas simultaneously, the source gas and reactant gas are supplied at different times to induce a reaction only on the surface of the substrate. First, the source gas is supplied to the substrate so that it is adsorbed on the surface of the substrate, and the remaining source gas can be removed using a purge gas. Next, the reactant gas is supplied to the substrate so that it reacts with the source gas adsorbed on the surface of the substrate, and the remaining reactant gas can be removed using a purge gas. In the step of supplying the reactant gas, the reaction between the source gas and the reactant gas forms an atomic layer or a single layer of thin film on the surface of the substrate. By repeating this process to the desired thickness, a thin film with a predetermined thickness can be formed on the substrate surface.

[0005] However, since the atomic layer deposition method causes the reaction between the source gas and the reactant gas to occur only on the substrate surface, the film deposition speed is lower than that of the general chemical vapor deposition method (CVD, Chemical Vapor Deposition), which has the disadvantage of being slower.

[0006] In addition, the process of quickly repeating the steps of supplying source gas to the same process space, purging the supplied source gas, supplying reactant gas, and purging the reactant gas has the disadvantage of taking a long time, and if the process is repeated quickly, the supplied source gas or reactant gas is not completely discharged (purged) from the process space to the outside of the chamber, so there is the disadvantage of the two gases meeting to form a chemical vapor deposition CVD thin film instead of forming an atomic layer thin film.

[0007] A method for rapidly supplying a source gas or a reactant gas, a structure in which the two gases do not mix during the atomic layer deposition (ALD) process of the source gas or reactant gas, and a pure atomic layer (Pure ALD) film are required.

[0008] In addition, a separate process space for spraying a deposition inhibitor or deposition inhibitor gas is required, and a structure is required that does not mix with the source gas or reactant gas.

[0009] In addition, a separate process space is required for additional plasma treatment before or after the atomic layer deposition process, and a structure is required that does not mix with the source gas or reactant gas.

[0010] The present invention is intended to solve the aforementioned problems, and has as its technical task the provision of a process chamber in which source gas and reactant gas are not mixed in space.

[0011] In addition, when forming a thin film using the atomic layer deposition (ALD) method, a device for providing a fast process method is a technical challenge.

[0012] In addition, the technical task is to provide a device that forms a film (Pure ALD layer) using a pure atomic layer deposition process on a substrate to densify a predetermined thin film or improve film quality.

[0013] In addition, the technical task is to provide a device for supplying purge gas to remove the reactant gas remaining on the substrate that moves rapidly from the reactant gas space to the source gas space in a purge gas space that separates the source gas space and the reactant gas space, and to supply purge gas to rapidly remove impurities in the generated thin film.

[0014] According to the present invention for achieving the above-described technical task, a substrate processing device may be a substrate processing device including: a chamber; a susceptor for placing at least three or more substrates; a gas injection unit for injecting gas toward the plurality of substrates; the gas injection unit includes: a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; and a third injection unit for injecting a surface treatment gas; and the gas injection unit includes a plasma electrode for forming plasma in one or more of the first injection unit, the second injection unit, and the third injection unit.

[0015] In addition, the susceptor may be a substrate processing device including a control unit that controls the susceptor to stop for a predetermined period of time, to slow down the moving speed, or to accelerate the moving speed when any one of the plurality of substrates passes through one of the first injection unit, the second injection unit, and the third injection unit.

[0016] It may be a substrate processing device including a first purge unit positioned radially in the center of the chamber and injecting purge gas between the first injection unit and the second injection unit; a second purge unit positioned radially in the center of the chamber and injecting purge gas between the second injection unit and the third injection unit; and a third purge unit positioned radially in the center of the chamber and injecting purge gas between the third injection unit and the first injection unit.

[0017] In another embodiment, a substrate processing device may include a susceptor for placing at least three or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; and a third injection unit for injecting a surface treatment gas, wherein the substrate processing method may be characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the second injection unit, and the third injection unit.

[0018] In addition, it may be a substrate processing method characterized by rotating the susceptor so that each substrate of the susceptor is sequentially exposed to the source gas, the reactant gas, and the surface treatment gas.

[0019] In another embodiment, a substrate processing device including a susceptor for placing at least three or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; and a third injection unit for injecting a surface treatment gas; may be a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the third injection unit, and the second injection unit.

[0020] In addition, it may be a substrate processing method characterized by rotating the susceptor so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, and the reactant gas.

[0021] The above control unit may be a substrate processing method characterized in that, when any one of the plurality of substrates passes through one of the first injection unit, the second injection unit, and the third injection unit, the control unit controls the substrate to be stopped for a predetermined period of time, or the moving speed to be slowed down, or the moving speed to be accelerated.

[0022] In another embodiment, a chamber; a susceptor for placing at least four or more substrates;

[0023] A gas injection unit that injects gas toward the plurality of substrates; the gas injection unit includes a first injection unit that injects a source gas; a second injection unit that injects a reactant gas; a third injection unit that injects a surface treatment gas; and a fourth injection unit that injects a deposition-inhibiting gas; and the gas injection unit may be a substrate processing device including a plasma electrode that forms plasma in one or more of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit.

[0024] In addition, the susceptor may be a substrate processing device including a control unit that controls the susceptor to stop for a predetermined period of time, to slow down the moving speed, or to accelerate the moving speed when any one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit.

[0025] In addition, it may be a substrate processing device including a first purge unit that is positioned radially in the center of the chamber and injects purge gas between the first injection unit and the fourth injection unit; a second purge unit that is positioned radially in the center of the chamber and injects purge gas between the fourth injection unit and the second injection unit; a third purge unit that is positioned radially in the center of the chamber and injects purge gas between the second injection unit and the third injection unit; and a fourth purge unit that is positioned radially in the center of the chamber and injects purge gas between the third injection unit and the first injection unit.

[0026] In another embodiment, a substrate processing device including a susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; a third injection unit for injecting a surface treatment gas; and a fourth injection unit for injecting a deposition-inhibiting gas; and a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the fourth injection unit, the second injection unit, and the third injection unit.

[0027] In addition, it may be a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the deposition inhibiting gas, the reactant gas, and the surface treatment gas.

[0028] The above control unit may be a substrate processing method characterized in that, when one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, the control unit controls the substrate to be stopped for a predetermined period of time, or the moving speed to be decelerated, or the moving speed to be accelerated.

[0029] In addition, when the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas, the substrate treatment method may be characterized by rotating the susceptor so that it is exposed to the surface treatment gas after the source gas, and then the deposition-inhibiting gas is exposed.

[0030] In another embodiment, a substrate processing device may include a susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; a third injection unit for injecting a surface treatment gas; and a fourth injection unit for injecting a deposition-inhibiting gas, wherein the substrate processing method may be characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the third injection unit, the fourth injection unit, and the second injection unit.

[0031] In addition, it may be a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, the deposition inhibiting gas, and the reactant gas.

[0032] In addition, the control unit may be a substrate processing method characterized in that, when one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, the control unit controls the substrate to be stopped for a predetermined period of time, or the moving speed to be decelerated, or the moving speed to be accelerated.

[0033] In addition, when the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, the deposition-inhibiting gas, and the reactant gas, the substrate treatment method may be characterized by rotating the susceptor so that it is exposed to the surface treatment gas after the reactant gas.

[0034] In another embodiment, a substrate processing device may include a susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a susceptor control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; a third injection unit for injecting a surface treatment gas; and a fourth injection unit for injecting a deposition-inhibiting gas, wherein a substrate processing method may be provided, characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the fourth injection unit, the first injection unit, the second injection unit, and the third injection unit.

[0035] In addition, it may be a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas.

[0036] In addition, the control unit may be a substrate processing method characterized in that, when one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, the control unit controls the substrate to be stopped for a predetermined period of time, or the moving speed to be decelerated, or the moving speed to be accelerated.

[0037] In addition, when the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas, it may be a substrate treatment method characterized in that the susceptor is rotated so that it is exposed to the surface treatment gas after the source gas and then the reactant gas is exposed.

[0038] In another embodiment, a substrate processing device may include a susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas in a direction opposite to the susceptor, and a susceptor control unit for rotating the susceptor with respect to the gas injection unit, wherein the gas injection unit includes a first injection unit for injecting a source gas; a second injection unit for injecting a reactant gas; a third injection unit for injecting a surface treatment gas; and a fourth injection unit for injecting a deposition-inhibiting gas, wherein a substrate processing method may be provided, characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the fourth injection unit, the first injection unit, the third injection unit, and the second injection unit.

[0039] In addition, it may be a substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas.

[0040] In addition, the control unit may be a substrate processing method characterized in that, when one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, the control unit controls the substrate to be stopped for a predetermined period of time, or the moving speed to be decelerated, or the moving speed to be accelerated.

[0041] In addition, when the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas, the substrate treatment method may be characterized by rotating the susceptor so that the surface treatment gas is exposed after the reactant gas.

[0042] In addition, the substrate processing device may be characterized in that the plurality of substrates are three or six.

[0043] In addition, the above surface treatment gas may be a substrate treatment method characterized in that it is a plasma treatment gas.

[0044] In addition, the substrate treatment method may be characterized in that the surface treatment gas is a gas containing hydrogen or oxygen.

[0045] According to the solution to the above problem, the substrate processing device according to the present invention can form a pure atomic layer (Pure ALD) thin film and a space for surface treatment and deposition suppression gas separately through a purge gas injection unit that can completely separate and divide the process space within the chamber into a source gas injection space, a reactant gas injection space, a deposition suppression gas injection space, and a surface treatment gas injection space.

[0046] By completely separating the space where the surface treatment gas is separated and the deposition suppression gas is injected, the atomic layer deposition (ALD) method can be realized, and by completely separating the process space where the source gas and reactant gas are injected, the ALD film quality can be improved.

[0047] In addition, the moving speed of the substrate in the source gas injection space, the reactant gas injection space, the deposition-inhibiting gas injection space, and the surface treatment gas injection space can be slowed down, accelerated, or stopped to improve the ALD film quality.

[0048] FIG. 1 is a plan view schematically showing a space separated from a substrate processing device and a plurality of substrates according to an embodiment of the present invention.

[0049] FIG. 2 is a drawing for explaining a space separation of a substrate processing device according to an embodiment of the present invention and a plurality of gas injection units at the upper part of the chamber.

[0050] FIG. 3 is a plan view schematically showing a space separated from a substrate processing device and a plurality of substrates according to an additional embodiment of the present invention.

[0051] FIG. 4 is a drawing for explaining a space separation of a substrate processing device according to an additional embodiment of the present invention and a plurality of injection parts at the upper part of the chamber.

[0052] FIGS. 5A to 5D are drawings for explaining the changed position of the gas injection unit of a substrate processing device according to an additional embodiment of the present invention.

[0053] The meanings of the terms described in this specification should be understood as follows.

[0054] Singular expressions should be understood to include plural expressions unless the context clearly defines otherwise, and terms such as “first”, “second”, etc. are intended to distinguish one component from another, and the scope of rights should not be limited by these terms.

[0055] The terms "include" or "have" should be understood as not excluding in advance the presence or addition of one or more other features, numbers, steps, operations, components, parts or combinations thereof.

[0056] The term "at least one" should be understood to include all combinations possible from one or more of the associated items. For example, "at least one of the first, second, and third items" means any combination of items possible from two or more of the first, second, and third items, as well as each of the first, second, and third items.

[0057] The term "on" includes not only cases where one configuration is formed directly on top of another configuration, but also cases where a third configuration is interposed between these configurations.

[0058] Hereinafter, a preferred embodiment according to the present invention will be described in detail with reference to the drawings.

[0059] Figures 1 and 2 may be schematic drawings of a substrate processing device according to an embodiment of the present invention. Figure 1 may be a plan view of the upper surface of the chamber cut away and looking from above at the lower susceptor, and Figure 2 may be a plan view of the upper surface of the chamber cut away and looking from above at the upper lid.

[0060] Referring to FIGS. 1 and 2, the substrate processing device according to the present invention may have a plurality of process spaces within the chamber. The plurality of process spaces of the chamber (200) may include a first process space (210), a second process space (220), and a third process space (230), and each of the plurality of process spaces may have a susceptor (201) below the first process space (210), the second process space (220), and the third process space (230).

[0061] At least three substrates can be placed on the above susceptor (201), and each of the first process space (210), the second process space (220), and the third process space (230) may have a first substrate (S1), a second substrate (S3), and a third substrate (S2), but this is not limited thereto, and when rotating, different substrates can be positioned in each space.

[0062] At this time, when the first substrate (S1), the second substrate (S3), and the third substrate (S2) are brought into the chamber (200), the substrates can be brought in and taken out one at a time.

[0063] In addition, the chamber (200) can be radially divided into a first process space (210), a second process space (220), and a third process space (230), and the areas can be divided at intervals of about 120 degrees.

[0064] In addition, the plurality of process spaces may have two substrates in the first process space (210), two substrates in the second process space (220), and two substrates in the third process space (230), so that six substrates can be placed on one susceptor (201).

[0065] A control unit (600) is connected inside or outside the chamber (200) so that the susceptor (201) can rotate clockwise (CW) or counterclockwise (CCW).

[0066] Referring to FIG. 2, the chamber (200) may include a gas injection unit (G100) as viewed from the top, and the gas injection unit (G100) may be a first injection unit (G1), a second injection unit (G3), and a third injection unit (G2). In the first process space (210), a first injection unit (G1) for injecting a source gas may be located, in the second process space (220), a second injection unit (G3) for injecting a reactant gas may be located, and in the third process space (230), a third injection unit (G2) for injecting a surface treatment gas may be located. In the third injection unit (G2) of the third process space (230), a plasma generator (not shown) capable of forming plasma may be additionally connected, or an electrode (not shown) may be installed so as to directly form plasma. Without being limited thereto, electrodes (not shown) may be installed in each of the first process space (210), the second process space (220), and the third process space (230) so that plasma can be formed. One of the electrodes may be connected to RF, and the other may be connected to ground, and the gas injection unit (G100) may include a plasma electrode (not shown) that forms plasma in one or more of the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2).

[0067] A purge gas is injected to separate the space of the chamber (200), and a first purge unit (240) is positioned radially from the center of the chamber (200) and injects purge gas between the first injection unit (G1) and the second injection unit (G3).

[0068] It includes a second purge unit (250) positioned radially in the center of the chamber (200) and injecting purge gas between the second injection unit (G3) and the third injection unit (G2).

[0069] The chamber (200) may include a third purge unit (260) positioned radially from the center and injecting purge gas between the third injection unit (G2) and the first injection unit (G1).

[0070] In addition, the fourth purge unit (270) located in the central portion of the chamber is included, and the fourth purge unit can be connected to the first purge unit (240), the second purge unit (250), and the third purge unit (260) so that one side of the central portion can be connected to divide the space.

[0071] The process of this device will be described based on the first substrate (S1). A source gas can be injected from the first injection unit (G1) of the first process space (210) to inject the source gas onto the first substrate (S1), and the susceptor (201) rotates and moves to the second process space (220) by passing through the purge gas injected from the first purge unit (240). In the second space (220), a reactant gas can be injected onto the first substrate (S1), and the reactant gas can be injected from the second injection unit (G3), and the susceptor (201) rotates and passes through the first purge unit (240) to rotate to the second process space (220). The first substrate (S1) can move to the third process space (230) by passing through the second purge unit (250) where the susceptor (201) rotates and injects purge gas. The third process space (230) has a third injection unit (G2) that injects surface treatment gas onto the first substrate (S1). The surface treatment gas can be hydrogen, argon, etc., and surface treatment can be performed by forming plasma. Again, the first substrate (S1) can move from the third process space (230) to the first process space (210) through the third purge section (260). One such process may be one cycle, and the first cycle may be one rotation through the third process space (230) after the first process space (210), the second process space (220), and the third process space (230). The first cycle may repeat a plurality of rotation cycles until a deposition film of a target thickness is formed. The deposition film of a target thickness can be formed by atomic layer deposition (ALD). In addition, in the third process space (230), an oxygen plasma surface treatment may be additionally performed after the hydrogen plasma surface treatment.

[0072] A super cycle can be performed in which the first cycle injects a source gas in the first process space (210), the reactant gas in the second process space (220), and the first surface treatment gas is injected by converting a gas containing hydrogen into plasma in the third process space (230), and then the second cycle is performed without injecting the source gas in the first process space (210), without injecting the reactant gas in the second process space (220), and without injecting the second surface treatment gas by converting a gas containing oxygen into plasma in the third process space (230). The first cycle can be performed continuously, the second cycle can be performed between the first cycles, or the first and second cycles can be performed continuously, with the first cycle (hydrogen plasma performed after the deposition process) followed by the second cycle (oxygen plasma performed after the non-deposition process), and the first cycle (hydrogen plasma performed after the deposition process) followed by the second cycle (oxygen plasma performed after the non-deposition process). Therefore, there may be an effect of performing hydrogen plasma and oxygen plasma sequentially after the deposition process.

[0073] The chamber (200) may include an exhaust unit (not shown) for exhausting the interior, and the exhaust unit may be located in the first process space (210) and / or the second process space (220). The susceptor (201) may be a substrate processing device that sequentially passes through the second injection unit (G3), the second purge unit (250), the third injection unit (G2), and the third purge unit (260), and includes a susceptor control unit (600) that controls the susceptor (201) to rotate or stop repeatedly within the chamber (200). In addition, the susceptor (201) may include a susceptor control unit (600) that controls the susceptor (201) to rotate or stop repeatedly within the chamber (200).

[0074] In addition, the susceptor (201) may include a susceptor control unit (600) that controls the substrate to stop for a predetermined time or to slow down or accelerate when passing through the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2), and the susceptor (201) may be a substrate processing device including a control unit (600) that controls the substrate to stop for a predetermined time or to slow down or accelerate when passing through one of the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2). The process time in the first process space (210), the second process space (220), and the third process space (230) may be a predetermined time, and the predetermined time may be a time during which the susceptor (201) stops in each of the first process space (210), the second process space (220), and the third process space (230), or the movement speed is reduced, or the movement speed is accelerated. The predetermined time may be the process time, and may be a time within 1 second (s) to 30 seconds (s).

[0075] As the first substrate (S1) rotates on the upper portion of the susceptor (201), process gases can be sequentially and equally injected to the second substrate (S2) and the third substrate (S3). Although the above embodiment has been described based on the first substrate (S1), the same process gas can be applied to the second substrate (S3) and the third substrate (S2). In addition, in the first process space (210), two substrates can be processed at the same time. In the second process space (220), two substrates can be processed at the same time. In the third process space (230), two substrates can be processed at the same time.

[0076] The above susceptor (201) may include a susceptor (201) control unit (600) that controls the susceptor (201) to stop or slow down and accelerate for a predetermined period of time when passing through the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2), and at least one of the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2) may include a plasma electrode (not shown).

[0077] In addition, the number of substrates on the susceptor (201) may be 3 or 6, and when the number of substrates is 6, 2 substrates may be positioned in each injection unit.

[0078] The source gas injected from the first injection unit (G1) may be a gas or precursor containing silicon or metal, and the reactant gas injected from the second injection unit (G3) may be a gas that reacts with the source gas to form an oxide film, a nitride film, a dielectric film, a metal film, or the like. In addition, the surface treatment gas injected from the third injection unit (G2) may be a plasma-generated gas, and the surface treatment gas may be a gas containing hydrogen or oxygen.

[0079] The plurality of substrates include a first substrate (S1), a second substrate (S3), and a third substrate (S2), and the first substrate (S1) on the susceptor (201) can be controlled to stop at the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2). The plurality of substrates on the susceptor (201) can be exposed to a purge gas in at least one of the first purge unit (240), the second purge unit (250), and the third purge unit (260). The method may include a first purge unit (240) positioned radially in the center of the chamber (200) and injecting a purge gas between the first injection unit (G1) and the second injection unit (G3), a second purge unit (250) positioned radially in the center of the chamber (200) and injecting a purge gas between the second injection unit (G3) and the third injection unit (G2), and a third purge unit (260) positioned radially in the center of the chamber (200) and injecting a purge gas between the third injection unit (G2) and the first injection unit (G1), and may be characterized in that the susceptor (201) is rotated so that each substrate of the susceptor (201) is sequentially exposed to the source gas, the reactant gas, and the surface treatment gas.

[0080] In addition, the rotation of the susceptor can be in one direction or in the opposite direction. If the process of rotating the susceptor (201) in the opposite direction is explained based on the first substrate (S1), the source gas can be injected from the first injection unit (G1) of the first process space (210) to inject the source gas onto the first substrate (S1), and the susceptor can rotate in the opposite direction and move to the third process space (230) through the purge gas injected from the third purge unit (260). By rotating to the third process space (230) in this way, a surface treatment process can be performed to remove impurities in the source gas using at least one plasma gas among hydrogen plasma, oxygen plasma, and argon plasma. The first substrate (S1) can perform the surface treatment process in the third process space (230) and move to the second process space (220) where the reactant gas is injected. Additionally, the first substrate (S2) in the second process space (200) can be moved to the first process space (210).

[0081] Referring to FIGS. 1 and 2, a susceptor (201) for placing at least three, three, or six substrates in a chamber (200) and a gas injection unit (G100) for injecting gas toward the plurality of substrates (S1, S2, S3) may be a first injection unit (G1) for injecting a source gas, a second injection unit (G3) for injecting a reactant gas, and a third injection unit (G2) for injecting a surface treatment gas. In the case where the plurality of substrates is six, two substrates may be exposed from each injection unit (G1, G2, G3).

[0082] The above gas injection unit (G100) may include a plasma generation unit (not shown) that forms plasma in at least one of a first injection unit (G1) that injects a source gas, a second injection unit (G3) that injects a reactant gas, and a third injection unit (G2) that injects a surface treatment gas. The plasma generation unit includes a first electrode and a second electrode, and one of the first electrode (not shown) and the second electrode (not shown) may be connected to an RF power source and the other may be connected to ground. A potential difference may be formed between the first electrode and the second electrode connected in this way, and a plasma gas may be supplied and plasma may be formed between the first electrode and the second electrode.

[0083] also,

[0084] Referring to FIGS. 1 and 2, the chamber (200) may include a first purge unit (240) positioned radially in the center and injecting purge gas between the first injection unit (G1) and the second injection unit (G3), a second purge unit (250) positioned radially in the center and injecting purge gas between the second injection unit (G3) and the third injection unit (G2), and a third purge unit (260) positioned radially in the center and injecting purge gas between the third injection unit (G2) and the first injection unit (G1).

[0085] Referring to FIGS. 1 and 2, the chamber (200) includes a susceptor (201) for placing at least three or more substrates and a gas injection unit (G100) for injecting gas toward the plurality of substrates, and the gas injection unit (G100) includes a first injection unit (G1) for injecting a source gas, a second injection unit (G3) for injecting a reactant gas, and a third injection unit (G2) for injecting a surface treatment gas, and the susceptor (201) can rotate so that the plurality of substrates sequentially and repeatedly pass through the source gas, the reactant gas, and the surface treatment gas, and a control unit (600) for controlling rotation so that the plurality of substrates of the susceptor (201) sequentially and repeatedly pass through the source gas, the reactant gas, and the surface treatment gas, and each substrate of the susceptor (201) is rotated by the first injection unit (G1) and the It may be a substrate processing method characterized by rotating the susceptor (201) so that the second injection unit (G3) and the third injection unit (G2) pass sequentially. In addition, it may be a substrate processing method characterized by rotating the susceptor (201) so that each substrate of the susceptor (201) is sequentially exposed to the source gas, the surface treatment gas, and the reactant gas.

[0086] The above control unit (600) can control the substrate to stop for a predetermined period of time, to slow down its movement speed, or to accelerate its movement speed when one of the plurality of substrates passes through one of the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2).

[0087] The predetermined time may be a process time for passing through one of the first injection unit (G1), the second injection unit (G3), and the third injection unit (G2), and may be controlled to stop for a predetermined time, or to slow down the moving speed, or to accelerate the moving speed.

[0088] In addition, the substrate processing device may include a susceptor (201) for placing at least three or more substrates in the chamber (200) and a gas injection unit (G100) for injecting gas toward the plurality of substrates, and the gas injection unit (G100) may include a first injection unit (G1) for injecting a source gas, a second injection unit (G3) for injecting a reactant gas, and a third injection unit (G2) for injecting a surface treatment gas, and may be characterized in that the susceptor (201) rotates so that the plurality of substrates sequentially and repeatedly pass through the source gas, the surface treatment gas, and the reactant gas.

[0089] The above susceptor (201) may include a control unit (600) that controls the rotation of the susceptor (201) so that the plurality of substrates of the susceptor (201) sequentially and repeatedly pass the source gas, the surface treatment gas, and the reactant gas.

[0090] The process time in the first process space (210), the second process space (220), and the third process space (230) may be a predetermined time, and the predetermined time may be a time during which the susceptor (201) stops in each of the first process space (210), the second process space (220), and the third process space (230), or the movement speed is reduced, or the movement speed is accelerated.

[0091] Referring to FIGS. 3 and 4, the substrate processing device according to the present invention may have a plurality of process spaces inside the chamber. The plurality of process spaces of the chamber (2000) may include a first process space (2100), a second process space (2200), a third process space (2300), and a fourth process space (2900), and each of the first process space (2100), the second process space (2200), the third process space (2300), and the fourth process space (2900) may have a susceptor (2010) at the bottom thereof.

[0092] At least four substrates can be placed on the above susceptor (2010), and the first process space (2100), the second process space (2200), the third process space (2300), and the fourth process space (2900) may each have a first substrate (S10), a second substrate (S30), a third substrate (S20), and a fourth substrate (S40), but this is not limited thereto, and when rotating, different substrates may be positioned in each space.

[0093] The gas injection unit (G1000) may include a first injection unit (G10) that injects a source gas, a second injection unit (G30) that injects a reactant gas, a third injection unit (G20) that injects a surface treatment gas, and a fourth injection unit (G40) that injects a deposition-inhibiting gas, and the gas injection unit (G1000) may be a substrate processing device that includes a plasma electrode (not shown) that forms plasma in one or more of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40).

[0094] In addition, the susceptor (2010) may include a control unit (6000) that controls the susceptor (2010) to stop for a predetermined period of time, to slow down the moving speed, or to accelerate the moving speed when any one of the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40).

[0095] At this time, when the first substrate (S10), the second substrate (S30), the third substrate (S20), and the fourth substrate (S40) are brought into the chamber (2000), the substrates can be brought in and taken out one at a time, and the chamber (2000) can be radially divided into a first process space (2100), a second process space (2200), a third process space (2300), and a fourth process space (2900), and the angles of the areas can be divided at intervals of about 90 degrees.

[0096] In addition, there may be two substrates in multiple process spaces, there may be two substrates in the first process space (2100), there may be two substrates in the second process space (2200), there may be two substrates in the third process space (2300), and there may be two substrates in the fourth process space (2900), so that up to eight substrates may be placed on the susceptor (2010), and three or more substrates and up to eight substrates may be placed on the susceptor (2010).

[0097] A control unit (6000) is connected inside or outside the chamber (2000), and the susceptor (2010) can rotate, reversely rotate, clockwise, or counterclockwise. The susceptor (2010) can rotate to the left and can also rotate to the right. The susceptor (2010) can rotate clockwise and can also rotate counterclockwise. The control unit (6000) may be a control unit (6000) that controls the rotation of the susceptor (2010), and the control unit (6000) can control the gas injection of the first injection unit (G10), which is the gas injection unit, the second injection unit (G30) that injects a reactant gas, the third injection unit (G20) that injects a surface treatment gas, and the fourth injection unit (G40) that injects a deposition-inhibiting gas.

[0098] Referring to FIGS. 3 and 4, as viewed from the top of the chamber (2000), a first injection unit (G10) for injecting a source gas may be positioned in each first process space (2100), a second injection unit (G30) for injecting a reactant gas may be positioned in each second process space (2200), a third injection unit (G20) for injecting a surface treatment gas may be positioned in each third process space (2300), and a fourth injection unit (G40) for injecting a deposition-inhibiting gas may be positioned in each fourth process space (2900). A plasma generator capable of forming plasma may be additionally connected to the third injection unit (G20) of the third process space (2300), or an electrode (not shown) may be installed to directly form plasma. Without being limited thereto, at least one of the injection units of the first injection unit (G10) of each of the first process space (2100), the second injection unit (G30) of each of the second process space (2200), the third injection unit (G20) of each of the third process space (2300), and the fourth injection unit (G40) of each of the fourth process space (2900) may have a plasma electrode (not shown) installed and included so that plasma can be formed. One of the plasma electrodes may be connected to RF, and the other may be connected to ground.

[0099] A purge gas capable of separating the space of the chamber (2000) is injected, and a first purge unit (2400) positioned radially from the center of the chamber (2000) and injecting the purge gas between the first injection unit (G10) and the fourth injection unit (G40) may be included. The chamber (2000) may include a second purge unit (2500) positioned radially in the center and injecting purge gas between the fourth injection unit (G40) and the second injection unit (G30), a third purge unit (2600) positioned radially in the center and injecting purge gas between the second injection unit (G30) and the third injection unit (G20), and a fourth purge unit (2800) positioned radially in the center and injecting purge gas between the third injection unit (G20) and the first injection unit (G10).

[0100] In addition, the fifth purge unit (2700) located in the central portion of the chamber is included, and the fifth purge unit can divide the process space by connecting the first purge unit (2400), the second purge unit (2500), the third purge unit (2600), and the fourth purge unit (2800) to one side of the fifth purge unit (2600).

[0101] The process method of this device will be described based on the first substrate (S10). A source gas may be injected from the first injection unit (G10) of the first process space (2100) to inject the source gas onto the first substrate (S10), and the subtractor (2010) may rotate and move to the fourth process space (2900) by passing through the purge gas injected from the first purge unit (2400). In the fourth process space (2900), a deposition-inhibiting gas may be injected onto the first substrate (S10) to which the source gas is adsorbed. The deposition-inhibiting gas may be injected onto the source gas adsorbed onto the first substrate (S10) or onto the source gas adsorbed onto the upper portion of the pattern or at the inlet, thereby inhibiting the deposition of a reactant gas to be injected later, thereby having the effect of improving the step coverage on the pattern.

[0102] Afterwards, it can pass through the second purge unit (2500) and move to the second process space (2200). In the second process space (2200), a reactant gas can be injected, and the reactant gas can be injected from the second injection unit (G30). The susceptor (2010) can rotate and pass through the third purge unit (2600) to rotate to the third process space (2300). The third process space (2300) has a third injection unit (G20) where a surface treatment gas is injected to the first substrate (S10), and the surface treatment gas can be one or more gases of hydrogen, oxygen, and argon, and the surface treatment gas can be used to form plasma to treat the surface of the deposited thin film on the first substrate (S10). Again, the first substrate (S10) can move from the third process space (2300) to the first process space (2100) through the fourth purge section (2800). One such process may be one cycle, and the first cycle may be defined as continuously rotating the third process space (2300) through the fourth process space (2900) and the second process space (2200) after the first process space (2100). The first cycle may repeat multiple cycles until a deposition film of a target thickness is formed. The deposition film of a target thickness can be formed using atomic layer deposition (ALD).

[0103] In addition, referring to FIGS. 3 and 4, another embodiment of the present device will be described based on the first substrate (S10). In the fourth process space (2900), the deposition-inhibiting gas is first injected onto the first substrate (S10) from the fourth injection unit (G40), and then the susceptor (2010) rotates clockwise, passes through the first purge unit (2400), and the source gas is injected from the first injection unit (G10) of the first process space (2100), so that the source gas is injected onto the first substrate (S10) and the source gas is adsorbed onto the first substrate (S10). The deposition-inhibiting gas may be a deposition-inhibiting agent. This can be implemented by a process method of first injecting the deposition-inhibiting gas and then injecting the source gas. The above-mentioned sub-suppressor (2010) can rotate and move to the third process space (2300) through the fourth purge unit (2800). In the second injection unit (G30) of the third process space (2300), plasma can be formed with at least one or more gases of hydrogen, oxygen, and argon, and a plurality of electrodes (not shown) or plasma generators (not shown) capable of forming plasma can be additionally connected to the second injection unit (G30). Through the plurality of electrodes (not shown), plasma can be formed directly inside the chamber (2000). The plasma formed with at least one or more gases of hydrogen, oxygen, and argon can be a surface treatment gas of the second injection unit (G30) of the third process space (2300), and the surface treatment gas can have an effect of removing impurities in the source gas adsorbed on the first substrate (S10).

[0104] One cycle starting from the fourth process space (2900) can sequentially and continuously rotate four spaces, namely, the fourth process space (2900), the first process space (2100), the third process space (2300), and the second process space (2200). A cycle that continuously rotates four spaces once can be referred to as a first cycle. The first cycle can be repeated until a deposition film of a target thickness is formed. A deposition film of a target thickness can be formed by atomic layer deposition (ALD), and the cycle can be repeatedly rotated while the target thickness is formed.

[0105] In addition, the susceptor (2010) can be rotated so that each substrate of the susceptor (2010) sequentially passes through the first injection unit (G10), the fourth injection unit (G40), the second injection unit (G30), and the third injection unit (G20), and the susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas.

[0106] The chamber (2000) may include an exhaust unit (not shown) for exhausting the interior, and the exhaust unit may be located in the first process space (2100) or / and the fourth process space (2900). The susceptor (2010) may be a substrate processing device including a control unit (6000) that controls the susceptor (2010) to rotate or stop repeatedly within the chamber (2000). The control unit (6000) may control the rotation of the susceptor (2010), and may control the gas flow rates of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40).

[0107] The above susceptor (2010) may be stopped for a predetermined period of time when passing through the first injection unit (G10), the third injection unit (G20), the second injection unit (G30), and the fourth injection unit (G40), or may include a control unit (6000) that controls the speed of the susceptor (2010) so as to control the deceleration and acceleration of the moving speed of the susceptor (2010).

[0108] On the upper portion of the above susceptor (2010), the first substrate (S10) rotates, and the second substrate (S20), the third substrate (S30), and the fourth substrate (G40) rotate sequentially, and process gases can be equally sprayed. Although the above embodiment was described based on the first substrate (S10), the same can be applied to the second substrate (S20), the third substrate (S30), and the fourth substrate (S40).

[0109] In addition, two substrates can be processed at the same time in the first process space (2100). Two substrates can be processed at the same time in the second process space (2200). Two substrates can be processed at the same time in the third process space (2300). In addition, two substrates can be processed at the same time in the fourth process space (2900).

[0110] The above susceptor (2010) may include a control unit (600) that can stop or decelerate and accelerate for a predetermined period of time when passing through the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40), and may control the movement speed, and may include a plasma electrode installed in at least one or more of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40).

[0111] The source gas injected from the first injection unit (G10) may be a gas or precursor containing silicon or metal, and the reactant gas injected from the second injection unit (G30) may be a gas that can react with the source gas to form an oxide film, a nitride film, a dielectric film, a metal film, or the like. In addition, the surface treatment gas injected from the third injection unit (G20) may be a plasma-activated gas, and the surface treatment gas may be a gas containing one or more of hydrogen, oxygen, and argon. The deposition-inhibiting gas injected from the fourth injection unit (G40) may be a gas containing alcohol.

[0112] Referring to FIGS. 3 and 4, a chamber (2000) may include a susceptor (2010) for placing at least four or more substrates (S10, S20, S30, S40), and a gas injection unit (G1000) for injecting gas toward the plurality of substrates (S10, S20, S30, S40), and the gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas, and each substrate of the susceptor (2010) may be connected to the fourth injection unit (G40), the first injection unit (G10), the second injection unit (G20), and the The susceptor (2010) can be rotated to sequentially pass through the third injection unit (G30).

[0113] The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas. In addition, the control unit (6000) can stop for a predetermined period of time, decelerate the moving speed, or accelerate the moving speed when any one of the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), and the third injection unit (G20).

[0114] This includes a first purge unit (2400) positioned radially in the center of the chamber (2000) and injecting purge gas between the first injection unit (G10) and the fourth injection unit (G40), a second purge unit (2500) positioned radially in the center of the chamber (2000) and injecting purge gas between the fourth injection unit (G40) and the second injection unit (G30), a third purge unit (2600) positioned radially in the center of the chamber (2000) and injecting purge gas between the second injection unit (G30) and the third injection unit (G20), and a third purge unit (2600) positioned radially in the center of the chamber (2000) and injecting purge gas between the third injection unit (G20) and the first injection unit (G10). It may include the 4th branch (2800).

[0115] The chamber (2000) is a substrate processing device including an exhaust unit (not shown) for exhausting gas inside the chamber (2000), and the susceptor (2010) rotates so that a plurality of substrates (S10, S20, S30, S40) on the susceptor (2010) sequentially pass through the first injection unit (G10), the first purge unit (2400), the fourth injection unit (G40), the second purge unit (2500), the second injection unit (G30), the third purge unit (2600), the third injection unit (G20), and the fourth purge unit (2800), and is controlled to stop for a predetermined period of time when passing through the first injection unit (G10), the fourth injection unit (G40), the second injection unit (G30), and the third injection unit (G20). It may include a substrate processing device including a control unit (6000).

[0116] In addition, the first substrate (S10) may be stopped or rotate at a slower speed than the first purge unit (240), the second purge unit (2500), the third purge unit (2600), and the fourth purge unit (2800) for a predetermined period of time in each space of the first injection unit (G10), the fourth injection unit (G40), the second injection unit (G30), and the third injection unit (G20). As an example, the first substrate (S10) may rotate more slowly when passing through the lower portion of the first injection unit (G10) than the first purge unit (2400), and the first substrate (S10) may control the speed to be slower than the speed of the first purge unit (2400) when passing through the lower portion of the first injection unit (G10). In addition, the first injection part (G10) is not limited to this example, but can be explained in the same way as the second injection part (G30), the third injection part (G20), and the fourth injection part (G40).

[0117] In addition, a control unit (6000) for controlling the movement speed of the susceptor (2010) to be decelerated and accelerated in the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40) may be connected, and the susceptor (2010) may include a control unit (6000) for controlling rotation and stoppage to be repeated inside the chamber (2000). A control unit (6000) for controlling the plurality of substrates to be stopped for a predetermined period of time under the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40) may be connected to or / and included in the susceptor (2010).

[0118] Referring to FIGS. 3 and 4, the chamber (2000) may include at least 4 or 8 susceptors (2010) for placing a plurality of substrates (S10, S20, S30, S40), and may include the gas injection unit (G1000) for injecting gas toward the plurality of substrates (S10, S20, S30, S40). The gas injection unit (G1000) for injecting the source gas may include a first injection unit (G10), a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas. The first injection unit (G10) that injects source gas, the second injection unit (G30) that injects reactant gas, the third injection unit (G20) that injects surface treatment gas, and the fourth injection unit (G40) that injects deposition-inhibiting gas can generate plasma.

[0119] The chamber (2000) may include a first purge unit (2400) positioned radially in the center and injecting purge gas between the first injection unit (G10) and the fourth injection unit (G40), a second purge unit (2500) positioned radially in the center and injecting purge gas between the fourth injection unit (G40) and the second injection unit (G30), a third purge unit (2600) positioned radially in the center and injecting purge gas between the second injection unit (G30) and the third injection unit (G20), and a fourth purge unit (2800) positioned radially in the center and injecting purge gas between the third injection unit (G20) and the first injection unit (G10). Additionally, it may include an exhaust unit (not shown) that exhausts the interior of the chamber (2000).

[0120] The description of the process method through rotation of the susceptor (2010) of the above plurality of substrates (S10, S20, S30, S40) can be identically described as one substrate among the above plurality of substrates (S10, S20, S30, S40).

[0121] One of the plurality of substrates (S10, S20, S30, S40) may be rotated to sequentially pass through the first injection unit (G10), the first purge unit (2400), the fourth injection unit (G40), the second purge unit (2500), the second injection unit (G30), the third purge unit (2600), the third injection unit (G20), and the fourth purge unit (2800). The plurality of substrates may be sequentially exposed to the source gas, the first purge gas, the deposition-inhibiting gas, the second purge gas, the reactant gas, the third purge gas, the surface treatment gas, and the fourth purge gas.

[0122] Additionally, the plurality of substrates may be sequentially exposed to the deposition-inhibiting gas, the source gas, the fourth purge gas, the surface treatment gas, the third purge gas, the reactant gas, and the second purge gas.

[0123] Referring to FIGS. 3 and 4, the chamber (2000) may include a susceptor (2010) for placing a plurality of substrates (S10, S20, S30, S40) of which at least 4 and no more than 8 are included, and may include a gas injection unit (G1000) for injecting gas toward the plurality of substrates (S10, S20, S30, S40). The gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas.

[0124] The plurality of substrates (S10, S20, S30, S40) may be rotated so as to sequentially pass through the fourth injection unit (G40), the first purge unit (2400), the first injection unit (G10), the fourth purge unit (2800), the third injection unit (G20), the third purge unit (2600), the second injection unit (G30), and the second purge unit (2500) while the susceptor (2010) rotates, and the plurality of substrates (S10, S20, S30, S40) are sequentially exposed to the deposition-inhibiting gas, the first purge gas, the source gas, the fourth purge gas, the surface treatment gas, the third purge gas, the reactant gas, and the second purge gas.

[0125] Referring to FIGS. 3 and 4, a susceptor (2010) for placing at least four or more substrates in the chamber (2000) and a gas injection unit (not shown) for injecting gas toward the plurality of substrates include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas, and the gas injection unit (G1000) may be a substrate processing device including a plasma generating unit (not shown) for forming plasma in at least one of the first injection unit (G10) for injecting a source gas, the second injection unit (G30) for injecting a reactant gas, the third injection unit (G20) for injecting a surface treatment gas, and the fourth injection unit (G40) for injecting a deposition-inhibiting gas, and the plasma forming the plasma The generation unit (not shown) may be a substrate processing device including a control unit (600) that controls the plasma generation unit (not shown). The control unit (6000) that controls the plasma generation unit (not shown) may be controlled by the same control unit (6000) as the control unit (6000) that controls the speed of the susceptor (6000).

[0126] In addition, the chamber (2000) may include a first purge unit (2400) positioned radially in the center and injecting purge gas between the first injection unit (G10) and the fourth injection unit (G40), a second purge unit (2500) positioned radially in the center and injecting purge gas between the fourth injection unit (G40) and the second injection unit (G30), and a third purge unit (2600) positioned radially in the center and injecting purge gas between the second injection unit (G30) and the third injection unit (G20). In addition, it may be a substrate processing device including a fourth purge unit (2800) positioned radially from the center of the chamber (2000) and injecting purge gas between the third injection unit (G20) and the first injection unit (G10).

[0127] Referring to FIGS. 3 and 4, a substrate processing device may include a susceptor (2010) for placing at least four or more substrates in the chamber (2000) and a gas injection unit (G1000) for injecting gas toward the plurality of substrates, wherein the gas injection unit (G1000) includes a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas, wherein the substrate processing method may be characterized in that the plurality of substrates of the susceptor (2010) rotates so that the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas sequentially and repeatedly pass through them. In addition, it may be a substrate processing method including a susceptor control unit (6000) that controls rotation so that the plurality of substrates of the susceptor (2010) sequentially and repeatedly pass the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas.

[0128] Referring to FIGS. 3 and 4, a substrate processing device may include a susceptor (2010) for placing at least four or more substrates in the chamber (2000) and a gas injection unit (G1000) for injecting gas toward the plurality of substrates, wherein the gas injection unit (G1000) includes a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas, wherein the substrate processing method may be characterized in that the plurality of substrates of the susceptor (2000) rotates so that the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas sequentially and repeatedly pass through them.

[0129] It may be a substrate processing method including a susceptor control unit (6000) that controls rotation so that the plurality of substrates of the susceptor (2010) sequentially and repeatedly pass through the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas.

[0130] The process time in the first process space (2100), the second process space (2200), the third process space (2300), and the fourth process space (G40) may be a predetermined time, and the predetermined time may be a time during which the susceptor (2010) stops in each of the first process space (2100), the second process space (2200), the third process space (2300), and the fourth process space (G40), or the movement speed is decelerated or the movement speed is accelerated.

[0131] Referring to FIGS. 3 and 4, the substrate processing device may include a susceptor (2010) for placing at least 4 to 8 substrates in the chamber (2000), a gas injection unit (G1000) for injecting gas in a direction opposite to the susceptor, and a control unit (6000) for rotating the susceptor (2010) with respect to the gas injection unit (G1000), and the gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) passes through the first injection unit (G10), the fourth injection unit (G40), the second injection unit (G30), and the third injection unit (G20) sequentially. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas. The control unit (6000) can control the susceptor (2010) to stop for a predetermined period of time, to slow down, or to accelerate when any one of the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40). When the susceptor (2010) is rotated so that each substrate of the susceptor (2010) is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas, the susceptor can be rotated so that it is exposed to the surface treatment gas after the source gas, and then the deposition-inhibiting gas.

[0132] In another embodiment, referring to FIGS. 3 and 4, the substrate processing device may include a susceptor (2010) for placing at least 4 to 8 substrates in the chamber (2000), a gas injection unit (G1000) for injecting gas in a direction opposite to the susceptor, and a control unit (6000) for rotating the susceptor (2010) with respect to the gas injection unit (G1000), and the gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) passes through the first injection unit (G10), the third injection unit (G20), the fourth injection unit (G40), and the second injection unit (G30) sequentially. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the source gas, the surface treatment gas, the deposition-inhibiting gas, and the reactant gas. The control unit (6000) can control the susceptor (2010) to stop for a predetermined period of time, to slow down, or to accelerate when any one of the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40).

[0133] When the susceptor (2010) is rotated so that each substrate of the susceptor (2010) is sequentially exposed to the source gas, the surface treatment gas, the deposition-inhibiting gas, and the reactant gas, the susceptor (2010) can be rotated so that it is exposed to the surface treatment gas after the reactant gas.

[0134] In another embodiment, referring to FIGS. 3 and 4, the chamber (2000) may include a susceptor (2010) for placing at least 4 to 8 substrates, a gas injection unit (G1000) for injecting gas in a direction opposite to the susceptor, and a control unit (6000) for rotating the susceptor (2010) with respect to the gas injection unit (G1000), and the gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) sequentially passes through the fourth injection unit (G40), the first injection unit (G10), the second injection unit (G30), and the third injection unit (G20), and the susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas. In addition, the control unit (6000) can control the susceptor (2010) to stop for a predetermined period of time, to slow down, or to accelerate when any one substrate among the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40). In addition, when the susceptor (2010) is rotated so that each substrate of the susceptor (2010) is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas, the susceptor (2010) can be rotated so that it is exposed to the surface treatment gas after the source gas, and then the reactant gas.

[0135] In another embodiment, referring to FIGS. 3 and 4, the substrate processing device may include a susceptor (2010) for placing at least 4 to 8 substrates in the chamber (2000), a gas injection unit (G1000) for injecting gas in a direction opposite to the susceptor, and a control unit (6000) for rotating the susceptor (2010) with respect to the gas injection unit (G1000), and the gas injection unit (G1000) may include a first injection unit (G10) for injecting a source gas, a second injection unit (G30) for injecting a reactant gas, a third injection unit (G20) for injecting a surface treatment gas, and a fourth injection unit (G40) for injecting a deposition-inhibiting gas. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) passes through the fourth injection unit (G40), the first injection unit (G10), the third injection unit (G20), and the second injection unit (G30) sequentially. The susceptor (2010) can be rotated so that each substrate of the susceptor (2010) is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas. The control unit (6000) can control the susceptor (2010) to stop for a predetermined period of time, to slow down, or to accelerate when any one of the plurality of substrates passes through one of the first injection unit (G10), the second injection unit (G30), the third injection unit (G20), and the fourth injection unit (G40). When the susceptor (2010) is rotated so that each substrate of the susceptor (2010) is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas, the susceptor (2010) can be rotated so that the surface treatment gas is exposed after the reactant gas.

[0136] Referring to FIGS. 5a to 5d, the arrangement of the gas injection parts of FIGS. 5a to 5d is not limited, and depending on the process method, a second gas injection part (G30), a third gas injection part (G20), or a fourth gas injection part (G40) may be positioned in the place of the first gas injection part (G10). In addition, the arrangement of the gas injection parts of FIGS. 5a to 5d is not limited, and depending on the process method, a first gas injection part (G10), a third gas injection part (G20), or a fourth gas injection part (G40) may be positioned in the place of the second gas injection part (G30). In addition, the arrangement of the gas injection parts of FIGS. 5a to 5d is not limited, and depending on the process method, the first gas injection part (G10), the second gas injection part (G30), or the fourth gas injection part (G40) may be positioned in the place of the third gas injection part (G20). In addition, the arrangement of the gas injection parts of FIGS. 5a to 5d is not limited, and depending on the process method, the first gas injection part (G10), the second gas injection part (G30), or the third gas injection part (G20) may be positioned in the place of the fourth gas injection part (G40).

[0137] In detail, referring to FIG. 5a, when explained clockwise, gas is injected into the space of the first injection unit (G10) that injects the source gas, the fourth injection unit (40) that injects the deposition-inhibiting gas, the second injection unit (G30) that injects the reactant gas, and the third injection unit (G20) that injects the surface treatment gas, and the substrate can sequentially pass through it.

[0138] In detail, referring to FIG. 5b, when described clockwise, gas is injected into the space of the first injection unit (G10) that injects the source gas, the third injection unit (G20) that injects the surface treatment gas, the fourth injection unit (40) that injects the gas and the deposition-inhibiting gas, and the second injection unit (G30) that injects the reactant gas, so that the substrate can pass through them sequentially.

[0139] In detail, referring to FIG. 5c, when explained clockwise, gas is injected into the space of the fourth injection unit (40) that injects a deposition-inhibiting gas, the first injection unit (G10) that injects a source gas, the second injection unit (G30) that injects a reactant gas, and the third injection unit (G20) that injects a surface treatment gas, and the substrate can sequentially pass through it.

[0140] In detail, referring to FIG. 5d, when explained clockwise, the fourth injection unit (40) that injects a deposition-inhibiting gas, the first injection unit (G10) that injects a source gas, the third injection unit (G20) that injects a surface treatment gas, and the second injection unit (G30) that injects a reactant gas inject gas into a space, and the substrate can sequentially pass through the space.

[0141] Those skilled in the art will appreciate that the present invention can be implemented in other specific forms without altering its technical spirit or essential characteristics. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. The scope of the present invention is defined by the claims below rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and their equivalents should be construed as being included within the scope of the present invention.

Claims

1. Chamber; A susceptor that holds at least three or more substrates; A gas injection unit that injects gas toward the plurality of substrates; The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit that injects surface treatment gas; A substrate processing device including a plasma electrode that forms plasma in one or more of the first injection unit, the second injection unit, and the third injection unit, wherein the gas injection unit is a gas injection unit.

2. In paragraph 1, The above susceptor, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, and the third injection unit, A substrate processing device including a control unit that controls the device to stop for a predetermined period of time, to slow down the moving speed, or to accelerate the moving speed.

3. In paragraph 1, A first purge section positioned radially in the center of the chamber and injecting purge gas between the first injection section and the second injection section; A second purge section positioned radially from the center of the chamber and injecting purge gas between the second injection section and the third injection section; A substrate processing device including a third purge section positioned radially in the center of the chamber and injecting purge gas between the third injection section and the first injection section.

4. It includes a susceptor for placing at least three or more substrates in a chamber, a gas injection unit for injecting gas toward the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit. The above gas injection part, A first injection unit that injects source gas; A second injection unit for injecting reactant gas; and In a substrate processing device including a third injection unit for injecting surface treatment gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the second injection unit, and the third injection unit.

5. In paragraph 4, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the reactant gas, and the surface treatment gas.

6. A susceptor that places at least three or more substrates in the chamber. A gas injection unit that injects gas facing the above susceptor Including a control unit that rotates the susceptor with respect to the gas injection unit, The above gas injection part, A first injection unit that injects source gas; A second injection unit for injecting reactant gas; and In a substrate processing device including a third injection unit for injecting surface treatment gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the third injection unit, and the second injection unit.

7. In paragraph 6, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, and the reactant gas.

8. In paragraph 4 or paragraph 6, The above control unit, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, and the third injection unit, A substrate processing method characterized by controlling the substrate to be stopped for a predetermined period of time, to be decelerated at a moving speed, or to be accelerated at a moving speed.

9. Chamber; A susceptor that holds at least four or more substrates; A gas injection unit that injects gas toward the plurality of substrates; The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit that injects surface treatment gas; A fourth injection unit for injecting a deposition-suppressing gas; The above gas injection part, A substrate processing device including a plasma electrode that forms plasma in one or more of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit.

10. In paragraph 9, A substrate processing device including a control unit that controls the susceptor to stop for a predetermined period of time, to slow down the moving speed, or to accelerate the moving speed when one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit.

11. In paragraph 9, A first purge section positioned radially in the center of the chamber and injecting purge gas between the first injection section and the fourth injection section; A second purge section positioned radially in the center of the chamber and injecting purge gas between the fourth injection section and the second injection section; A third purge section positioned radially from the center of the chamber and injecting purge gas between the second injection section and the third injection section; A substrate processing device including a fourth purge section positioned radially in the center of the chamber and injecting purge gas between the third injection section and the first injection section.

12. A susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas toward the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit. The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit for injecting surface treatment gas; and In a substrate processing device including a fourth injection unit that injects a deposition-inhibiting gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the fourth injection unit, the second injection unit, and the third injection unit.

13. In paragraph 12, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas.

14. In paragraph 12 or 13, The above control unit, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, A substrate processing method characterized by controlling the substrate to be stopped for a predetermined period of time, to be decelerated at a moving speed, or to be accelerated at a moving speed.

15. In paragraph 13, When the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the deposition-inhibiting gas, the reactant gas, and the surface treatment gas, A substrate processing method characterized in that the susceptor is rotated so that the surface treatment gas is exposed after the source gas and the deposition-inhibiting gas is exposed.

16. A susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas toward the susceptor, and a control unit for rotating the susceptor with respect to the gas injection unit, The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit for injecting surface treatment gas; and In a substrate processing device including a fourth injection unit that injects a deposition-inhibiting gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the first injection unit, the third injection unit, the fourth injection unit, and the second injection unit.

17. In paragraph 16, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, the deposition-inhibiting gas, and the reactant gas.

18. In paragraph 16 or 17, The above control unit, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, A substrate processing method characterized by controlling the substrate to be stopped for a predetermined period of time, to be decelerated at a moving speed, or to be accelerated at a moving speed.

19. In Article 17, When the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the source gas, the surface treatment gas, the deposition suppressing gas, and the reactant gas, A substrate processing method characterized by rotating the susceptor so as to be exposed to a surface treatment gas after the reactant gas.

20. A susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas toward the susceptor, and a susceptor control unit for rotating the susceptor with respect to the gas injection unit, The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit for injecting surface treatment gas; and In a substrate processing device including a fourth injection unit that injects a deposition-inhibiting gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the fourth injection unit, the first injection unit, the second injection unit, and the third injection unit.

21. In paragraph 20, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas.

22. In paragraph 20 or 21, The above control unit, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, A substrate processing method characterized by controlling the substrate to be stopped for a predetermined period of time, to be decelerated at a moving speed, or to be accelerated at a moving speed.

23. In paragraph 21, When the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the reactant gas, and the surface treatment gas, A substrate processing method characterized in that the susceptor is exposed to the surface treatment gas after the source gas and the reactant gas is exposed by rotating the susceptor.

24. A susceptor for placing at least four or more substrates in a chamber, a gas injection unit for injecting gas toward the susceptor, and a susceptor control unit for rotating the susceptor with respect to the gas injection unit, The above gas injection part, A first injection unit that injects source gas; A second injection unit that injects reactant gas; A third injection unit for injecting surface treatment gas; and In a substrate processing device including a fourth injection unit that injects a deposition-inhibiting gas, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor sequentially passes through the fourth injection unit, the first injection unit, the third injection unit, and the second injection unit.

25. In paragraph 24, A substrate processing method characterized in that the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas.

26. In paragraph 25 or 26, The above control unit, When one of the plurality of substrates passes through one of the first injection unit, the second injection unit, the third injection unit, and the fourth injection unit, A substrate processing method characterized by controlling the substrate to be stopped for a predetermined period of time, to be decelerated at a moving speed, or to be accelerated at a moving speed.

27. In paragraph 25, A substrate processing method characterized in that when the susceptor is rotated so that each substrate of the susceptor is sequentially exposed to the deposition-inhibiting gas, the source gas, the surface treatment gas, and the reactant gas, the susceptor is rotated so that the surface treatment gas is exposed after the reactant gas.

28. In any one of paragraphs 1, 4, and 6, A substrate processing device characterized in that the plurality of substrates are three or six.

29. In any one of paragraphs 4, 6, 12, and 14, A substrate treatment method, characterized in that the surface treatment gas is a plasma gas.

30. In any one of paragraphs 4, 6, 12, and 14, A substrate treatment method, characterized in that the surface treatment gas is a gas containing hydrogen or oxygen.

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