Method for determining device layout diagram of converter apparatus, and converter apparatus

Abstract

A method for determining a device layout diagram of a converter apparatus, and a converter apparatus, which belong to the technical field of semiconductor apparatuses. The method comprises: acquiring target requirements for a converter apparatus (S1); determining device types and arrangement modes of devices in the converter apparatus on the basis of the target requirements (S2); and determining a device layout diagram of the converter apparatus on the basis of the arrangement modes and the device types (S3). Free combination is realized on the basis of actual application requirements, and optimization design is performed on the converter apparatus, such that platformization, simplification and unification of a converter apparatus product can be realized.

Description

A method for determining a layout diagram of a converter device and a converter device

[0001] This application claims priority to Chinese patent application CN202311568829.7, filed on November 22, 2023, entitled “A method for determining a device layout diagram of a converter device and a converter device,” the entire contents of which are incorporated herein by reference. Technical Field

[0002] The invention belongs to the technical field of semiconductor devices, and particularly relates to a method for determining a device layout diagram of a current converter and the current converter. Background Art

[0003] A three-level converter is a device used to control current in power systems. It converts DC power into AC power, enabling effective control and management of the power system. However, the diverse demands placed on three-level converters in practical applications necessitate the development of multiple types of converters, hindering the integration of platforms and simplified systems. Furthermore, three-level converters using all-SiC devices are expensive and require a large number of parallel devices, resulting in a low cost-performance ratio.

[0004] Summary of the Invention

[0005] To address the above technical issues, the present invention proposes a method for determining a device layout diagram for a power converter, and a power converter. This application obtains target requirements for the power converter; determines the device type and layout of each device in the power converter based on the target requirements; and determines the device layout diagram for the power converter based on the layout and device type. This allows for optimized design of the power converter through free combination based on actual application requirements, achieving platform-based and simplified power converter product development.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention includes two aspects.

[0007] In a first aspect, a method for determining a device layout diagram of a converter device is provided, comprising: obtaining target requirements for the converter device; determining the device type and arrangement of each device in the converter device according to the target requirements; and determining the device layout diagram of the converter device according to the arrangement and the device type.

[0008] In some embodiments, the devices include: an inner tube, a clamping tube, and an outer tube; the arrangement includes: multiple inner tubes connected in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: requiring the inner tube to switch at high frequency, and the outer tube and the clamping tube to operate at low frequency; determining the device type and arrangement of each device in the converter according to the target requirements includes: when the target requirement is that the inner tube needs to switch at high frequency, and the outer tube and the clamping tube need to operate at low frequency, determining that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement is multiple inner tubes connected in parallel.

[0009] In some embodiments, the device layout diagram determined according to the arrangement method and the device type includes: the outer tubes and the clamping tubes are arranged in a matrix to form a two-by-two matrix, and the outer tubes and the clamping tubes are each in a column; the inner tubes are arranged in a column longitudinally and close to the side of the matrix where the clamping tubes are located.

[0010] In some embodiments, the outer tube includes: an upper outer tube and a lower outer tube; the clamping tube includes: an upper clamping tube and a lower clamping tube; the device layout diagram further includes: the upper outer tube and the upper clamping tube are located in the same row, and the AC side of the upper outer tube is adjacent to the DC side of the upper clamping tube; the lower outer tube and the lower clamping tube are located in the same row, and the DC side of the lower outer tube is adjacent to the AC side of the lower clamping tube; the drain or collector of the inner tube is close to the clamping tube.

[0011] In some embodiments, the devices include: inner tube and outer tube modules; the arrangement includes: multiple inner tubes in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube requires low-frequency switching and the outer tube module requires high-frequency action; the device type and arrangement of each device in the converter device determined according to the target requirements include: when the target requirement requires low-frequency switching of the inner tube and high-frequency action of the outer tube module, determining that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement is a single inner tube.

[0012] In some embodiments, the outer tube module includes: an upper outer tube module and a lower outer tube module; the device layout diagram also includes: arranging the upper outer tube module and the lower outer tube module in a row from top to bottom, and the AC side of the upper outer tube module and the AC side of the lower outer tube module are located on the same side; the inner tubes are arranged in rows, and each of the inner tubes has the same orientation, with the collector facing the AC side of the upper outer tube module or the lower outer tube module.

[0013] In the second aspect, the present application proposes a current conversion device, including: a heat sink, a power device, a low-inductance busbar, an AC side quick connector, a DC side quick connector, a support assembly, a control box and a pulse drive integrated board; the power device is arranged on one side of the heat sink according to the device layout diagram generated by any method described in the first aspect; the AC side quick connector is installed on the heat sink and electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load; the DC side quick connector is arranged on the heat sink and electrically connected to the low-inductance busbar, and is used to input DC power to the power device; one end of the support assembly is installed on the heat sink, and the other end is connected to the control box, and is used to install the control box and the heat sink together; the pulse drive integrated board is installed in the control box and is electrically connected to the power device, and is used to control the opening and closing of the power device.

[0014] In some embodiments, when the power device is arranged on the heat sink according to the device layout diagram determined by any method described in the first aspect, the low-inductance busbar includes: a first low-inductance busbar and an AC copper busbar; the AC copper busbar is connected to the AC side quick connector and electrically connected to the output end of the inner tube, for outputting the AC power generated by the inner tube to the AC side quick connector; the first low-inductance busbar is connected to the DC side quick connector, and is simultaneously connected to the input and output ends of the outer tube and the clamping tube, and is also connected to the input end of the inner tube.

[0015] In some embodiments, the first low-inductance busbar includes: a DC connection part, a DC transfer busbar and a device connection part; the DC connection part is provided with at least four connection blocks, which are connected to the DC side quick connector; the DC connection part includes at least two neutral potential connection blocks, one high potential connection block and one low potential connection block; the device connection part includes multiple connection ports and at least three connection layers, wherein the connection layers are respectively a neutral potential layer, a high potential layer and a low potential layer; the connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube; the connection port provided on the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube; the connection port provided on the low potential layer is connected to the negative input terminal of the lower outer tube. Connection; the DC transfer busbar includes at least four connection bars, including at least two neutral potential connection bars, one high potential connection bar and one low potential connection bar; the four connection bars are arranged in two layers, and the high potential connection bar is diagonally arranged to the low potential connection bar; one end of the two neutral potential connection bars is respectively connected to the two neutral potential connection blocks of the DC connection part, and the other end is connected to the neutral potential layer of the device overlapping part; one end of the high potential connection bar is connected to the high potential connection block of the DC connection part, and the other end is connected to the high potential layer of the device overlapping part; one end of the low potential connection bar is connected to the low potential connection block of the DC connection part, and the other end is connected to the low potential layer of the device overlapping part.

[0016] In some embodiments, when the power device is arranged on the heat sink according to the device layout diagram determined by the method of any one of claims 5-6, the low-inductance busbar includes: a second low-inductance busbar and a third low-inductance busbar; the second low-inductance busbar is connected to the DC side quick connector, and is also connected to the input end of the upper outer tube module and the lower outer tube module; the third low-inductance busbar is connected to the output end of the upper outer tube module and the lower outer tube module, and is also connected to the input end and output end of the inner tube, and is also connected to the AC side quick connector.

[0017] In some embodiments, the second low-inductance busbar includes: a DC connection part, a DC transfer busbar and a device connection part; the DC connection part includes at least five connection terminals, which are connected to the DC side quick connector, wherein the connection terminals include at least two neutral potential connection terminals, one high potential connection terminal and one low potential connection terminal; the five connection terminals form a terminal row; when the high potential connection terminal is in the middle position, there are two low potential connection terminals, which are respectively arranged at both ends of the terminal row; when the low potential connection terminal is in the middle position, there are two high potential connection terminals, which are respectively arranged at both ends of the terminal row; the The device overlap portion includes at least multiple connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer and a neutral potential layer; the connection port arranged on the high potential layer is connected to the positive input terminal of the upper outer tube module; the connection port arranged on the neutral potential layer is connected to the negative input terminal of the upper outer tube module and the positive input terminal of the lower outer tube module; the connection port arranged on the low potential layer is connected to the negative input terminal of the lower outer tube module; the DC transfer busbar includes at least five connection bars, one end of each connection bar is connected to a connection terminal of the DC connection part, and the other end is connected to the connection layer corresponding to the connection terminal.

[0018] In some embodiments, the same structure is arranged on both sides of the heat sink, so that the converter becomes a double-sided converter.

[0019] The present invention has the following beneficial effects: By obtaining target requirements for the converter device, determining the device type and layout of each device in the converter device based on the target requirements, and determining a device layout diagram for the converter device based on the layout and device types, the converter device can be freely combined and optimized according to actual application needs, achieving platform-based and simplified converter device products. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The scope of the present disclosure may be better understood by reading the following detailed description of exemplary embodiments in conjunction with the accompanying drawings, which include:

[0021] FIG1 is an overall flow chart of a method for determining a device layout diagram of a power conversion device provided by an embodiment of the present application;

[0022] FIG2 is a schematic diagram of a device with multiple inner tubes connected in parallel according to an embodiment of the present application;

[0023] FIG3 is a device layout diagram of multiple parallel inner tubes provided in an embodiment of the present application;

[0024] FIG4 is a schematic diagram of a device with a single inner tube provided in an embodiment of the present application;

[0025] FIG5 is a device layout diagram of a single inner tube provided in an embodiment of the present application;

[0026] FIG6 is a schematic structural diagram of an inner tube multi-parallel current conversion device provided in an embodiment of the present application;

[0027] FIG7 is a schematic structural diagram of a double-sided tape inner tube multi-parallel current conversion device provided in an embodiment of the present application;

[0028] FIG8 is a schematic structural diagram of an inner-tube single-tube flow converter provided in an embodiment of the present application;

[0029] FIG9 is a schematic structural diagram of a double-sided inner tube single-tube flow converter device provided in an embodiment of the present application;

[0030] FIG10 is a schematic structural diagram of a first low-inductance busbar provided in an embodiment of the present application;

[0031] FIG11 is a schematic structural diagram of a second low-inductance busbar provided in an embodiment of the present application. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solutions and advantages of this application clearer, the application will be further described in detail below with reference to the accompanying drawings. The described embodiments should not be regarded as limiting this application. All other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0033] In the following description, reference is made to “some embodiments”, which describes a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0034] If similar descriptions of "first\second\third" appear in the application documents, the following explanation will be added. In the following description, the terms "first\second\third" are only used to distinguish similar objects and do not represent a specific order for the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0035] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by those skilled in the art to which this application pertains. The terms used herein are for the purpose of describing the embodiments of this application only and are not intended to limit this application.

[0036] Example 1:

[0037] A three-level converter is a device used to control current in power systems. It converts DC power into AC power, enabling effective control and management of the power system. However, the diverse demands placed on three-level converters in practical applications necessitate the development of multiple types of converters, hindering the integration of platforms and simplified systems. Furthermore, three-level converters using all-SiC devices are expensive and require a large number of parallel devices, resulting in a low cost-performance ratio.

[0038] To address the problems existing in the prior art, the present application provides a method for determining a layout diagram of a converter device, as shown in FIG1 . The method is applied to an electronic device, which may be a server, a mobile terminal, a computer, a cloud platform, etc. The functions implemented by the device data processing provided in the embodiments of the present application can be implemented by a processor of the electronic device calling program code, wherein the program code can be stored in a computer storage medium. The method for determining a layout diagram of a converter device includes:

[0039] Step S1: obtaining target requirements for the current conversion device.

[0040] Step S2: Determine the device type and arrangement of each device in the converter according to the target requirement.

[0041] The differences between three-level converters primarily lie in the layout and circuitry of their power devices. Therefore, to achieve platform-based and simplified design, the device layout for the target three-level converter must be determined based on specific requirements. Before finalizing the device layout, the required device types and layout must be determined based on the target requirements.

[0042] In the prior art, three-level converters utilize all-silicon carbide devices. However, due to the large number of silicon carbide devices required and the high price of individual silicon carbide devices, the resulting three-level converter has a low cost-performance ratio. Therefore, this application proposes the use of a mixture of silicon carbide and silicon devices to form a three-level converter. The components of a three-level converter can be divided into outer tubes, clamping tubes, and inner tubes based on their functions. The inner tubes can be arranged in a parallel arrangement or a single arrangement. The target requirements for a three-level converter include: high-frequency switching for the inner tube, low-frequency switching for the outer tube and clamping tube, and low-frequency switching for the inner tube and high-frequency switching for the outer tube and clamping tube.

[0043] Therefore, in some embodiments, step S2 of "determining the device type and arrangement of each device in the converter according to the target requirement" includes:

[0044] Step S21: When the target requirement is that the inner tube switches at high frequency and the outer tube and the clamping tube operate at low frequency, it is determined that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement is that multiple inner tubes are connected in parallel.

[0045] In some embodiments, step S2 of "determining the device type and arrangement of each device in the converter according to the target requirement" further includes:

[0046] Step S22: When the target requirement is that the inner tube needs low-frequency switching and the outer tube module needs high-frequency operation, it is determined that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement mode is a single inner tube.

[0047] Step S3: Determine a device layout diagram of the converter device according to the arrangement mode and the device type.

[0048] After determining the device type and layout of each device, the device schematic diagram of the three-level converter can be easily determined. The device schematic diagram obtained in step S21 is shown in FIG2 , and the device schematic diagram obtained in step S22 is shown in FIG4 . The device layout diagram is then determined based on the device schematic diagram.

[0049] Therefore, in some embodiments, as shown in FIG3 , when the device type and the arrangement are as in step S21 , the device layout diagram determined in step S2 in step S3 includes:

[0050] The outer tubes and the clamping tubes are arranged in a matrix, forming a two-by-two matrix, and the outer tubes and the clamping tubes are arranged in a column. The inner tubes are arranged in a column longitudinally and close to the side of the matrix where the clamping tubes are located.

[0051] In a three-level converter device, the outer tube can be divided into an upper outer tube and a lower outer tube, and similarly, the clamping tube can be divided into an upper clamping tube and a lower clamping tube.

[0052] Therefore, in some embodiments, the device layout diagram further includes:

[0053] The upper outer tube and the upper clamping tube are located in the same row, with the AC side of the upper outer tube adjacent to the DC side of the upper clamping tube. The lower outer tube and the lower clamping tube are located in the same row, with the DC side of the lower outer tube adjacent to the AC side of the lower clamping tube. The drain or collector of the inner tube is adjacent to the clamping tube. In Figure 3, V1 represents the upper outer tube, V2 represents the upper clamping tube, V3 represents the lower clamping tube, V4 represents the lower outer tube, and V5-V7 represent the inner tubes.

[0054] This device layout improves the space utilization of power devices in the multi-parallel configuration, making the power device space more compact and increasing power density. It also effectively reduces stray inductance in the circuit, thereby reducing overvoltage spikes generated during device switching.

[0055] In FIG2 and FIG3 , the inner tube can be made of either a silicon carbide device or a silicon device. Therefore, when the inner tube is made of a silicon carbide device, the drain of the inner tube is close to the clamping tube, and when the inner tube is made of a silicon device, the collector of the inner tube is close to the clamping tube.

[0056] In some embodiments, the device schematic diagram obtained according to step S22 is shown in FIG4 . In FIG4 , the upper outer tube and the upper clamping tube are integrated into an upper outer tube module, while the lower outer tube and the lower clamping tube are integrated into a lower outer tube module. The device layout diagram obtained according to FIG4 is shown in FIG5 , including:

[0057] Arrange the upper and lower outer tube modules in a row from top to bottom, with the AC side of the upper and lower outer tube modules on the same side. The inner tubes are arranged in rows, with each inner tube oriented in the same direction, with the collector facing the AC side of the upper or lower outer tube module. In Figure 5, V1c represents the upper outer tube module, V2c represents the lower outer tube module, and V3c and V4c represent the inner tubes.

[0058] This device layout improves the space utilization of power devices in the single-tube internal configuration, making them compact and increasing power density. It also effectively reduces stray inductance in the circuit, thereby reducing overvoltage spikes generated during device switching.

[0059] Through steps S1 to S3, the present application implements a platform-based and simplified design of three-level converter devices with different requirements, which can meet the application requirements of high-voltage and high-power three-level converter devices, while achieving optimal matching of devices, effectively reducing device costs, and improving device density and cost-effectiveness.

[0060] Example 2:

[0061] The layout of the individual power devices in a converter device changes the overall structure of the converter device, and such changes can improve the overall performance of the converter device. Therefore, in a second aspect, a converter device is proposed, including at least four types of converter devices, as shown in Figures 6-9: a single-sided multi-parallel converter device, a double-sided multi-parallel converter device, a single-sided single-tube converter device, and a double-sided single-tube converter device.

[0062] As shown in Figures 6 to 9, the present application proposes a current conversion device, including: a heat sink 1, power devices, a low-inductance busbar, an AC side quick connector 5, a DC side quick connector 10, a support assembly 11, a control box 12 and a pulse drive integrated board 13.

[0063] The power devices are arranged on one side of the radiator 1 according to the device layout diagram of Figure 3 or Figure 5. The AC side quick connector 5 is installed on the radiator 1 and is electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load. The DC side quick connector 10 is arranged on the radiator and is electrically connected to the low-inductance busbar, and is used to input DC power to the power device. One end of the support assembly 11 is installed on the radiator 1, and the other end is connected to the control box 12, and is used to install the control box 12 and the radiator 1 together. The pulse drive integrated board 13 is installed in the control box 12 and is electrically connected to the power device, and is used to control the opening and closing of the power device.

[0064] As shown in FIG6 , in some embodiments, when the power devices are arranged on the heat sink 1 according to the device layout diagram shown in FIG3 , the low-inductance busbar includes: a first low-inductance busbar 61 and an AC copper busbar 62 .

[0065] The AC copper busbar 62 is connected to the AC-side quick connector 5 and is electrically connected to the output end of the inner tube 3, and is used to output the AC power generated by the inner tube 3 to the AC-side quick connector 5. The first low-inductance busbar 61 is connected to the DC-side quick connector 10, and is simultaneously connected to the input and output ends of the outer tube and the clamping tube 2, as well as the input end of the inner tube 3.

[0066] In some embodiments, as shown in FIG10 , the first low-inductance busbar 61 includes a DC connection portion 611 , a DC transfer busbar 612 , and a device connection portion 613 .

[0067] The DC connection part 611 is provided with at least four connection blocks, which are connected to the DC side quick connector 10. The DC connection part 611 includes at least two neutral potential connection blocks, one high potential connection block and one low potential connection block.

[0068] The device bridge portion 613 includes multiple connection ports and at least three connection layers, wherein the connection layers are respectively a neutral potential layer, a high potential layer, and a low potential layer. The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube. The connection port provided on the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube. The connection port provided on the low potential layer is connected to the negative input terminal of the lower outer tube.

[0069] The DC transfer busbar 612 includes at least four connection bars, including at least two neutral potential connection bars 6122, one high potential connection bar 6121, and one low potential connection bar 6123. The four connection bars are arranged in two layers, and the high potential connection bar 6121 and the low potential connection bar 6123 are arranged diagonally. One end of the two neutral potential connection bars 6122 is respectively connected to the two neutral potential connection blocks of the DC connection part 611, and the other end is connected to the neutral potential layer of the device connection part 613. One end of the high potential connection bar 6121 is connected to the high potential connection block of the DC connection part 611, and the other end is connected to the high potential layer of the device connection part 613. One end of the low potential connection bar 6123 is connected to the low potential connection block of the DC connection part 611, and the other end is connected to the low potential layer of the device connection part 613.

[0070] In the first low-inductance busbar 61 shown in FIG10 , the four connection bars are divided into two rows, and the high-potential connection bar 6121 and the low-potential connection bar 6123 are arranged diagonally. This allows the low-inductance busbar to ensure good electrical and insulation performance. At the same time, this arrangement can significantly reduce the stray inductance in the first low-inductance busbar 61.

[0071] In some embodiments, as shown in FIG8 , when the power devices are arranged on the heat sink 1 according to the device layout diagram shown in FIG5 , the low-inductance busbar includes: a second low-inductance busbar 8 and a third low-inductance busbar 7 .

[0072] The second low-inductance busbar 8 is connected to the DC-side quick connector 10 and is also connected to the input ends of the upper outer tube module 4 and the lower outer tube module 4. The third low-inductance busbar 7 is connected to the output ends of the upper outer tube module 4 and the lower outer tube module 4, and is also connected to the input and output ends of the inner tube 3, and is also connected to the AC-side quick connector 5.

[0073] In some embodiments, as shown in FIG11 , the second low-inductance busbar 8 includes: a DC connection portion, a DC transfer busbar 82 and a device connection portion 83 .

[0074] The DC connection portion includes at least five connection terminals connected to the DC side quick connector 10, wherein the connection terminals include at least two neutral potential connection terminals 812, one high potential connection terminal 811, and one low potential connection terminal 813. The five connection terminals form a terminal block.

[0075] When the high potential connection terminal 811 is located in the middle, there are two low potential connection terminals 813, which are respectively arranged at both ends of the terminal row. When the low potential connection terminal 813 is located in the middle, there are two high potential connection terminals 811, which are respectively arranged at both ends of the terminal row.

[0076] The device overlap portion 83 includes at least a plurality of connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer, and a neutral potential layer. The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube module 4. The connection port provided on the neutral potential layer is connected to the negative input terminal of the upper outer tube module and the positive input terminal of the lower outer tube module 4. The connection port provided on the low potential layer is connected to the negative input terminal of the lower outer tube module 4.

[0077] The DC transfer busbar 82 includes at least five connection bars, one end of each connection bar is connected to a connection terminal of the DC connection part, and the other end is connected to a connection layer corresponding to the connection terminal.

[0078] In FIG11 , the second low-inductance busbar 8 has multiple connection terminals, and a neutral potential connection terminal 812 is separated between the high potential connection terminal 811 and the low potential connection terminal 813. This can ensure good electrical and insulation performance of the low-inductance busbar. At the same time, this setting can greatly reduce the stray inductance in the first low-inductance busbar 61.

[0079] The converter devices described in Figures 6 and 8 are all single-sided converter devices, but in actual needs, there are also double-sided converter devices. Therefore, in some embodiments, as shown in Figures 7 and 9, the same structure is arranged on both sides of the radiator 1, making the converter device a double-sided converter device.

[0080] As shown in Figure 7, by arranging the structure shown in Figure 6, excluding heat sink 1, on the other side of heat sink 1, a double-sided multi-parallel converter device can be obtained. Furthermore, as shown in Figure 9, by arranging the structure shown in Figure 8, excluding heat sink 1, on the other side of heat sink 1, a double-sided single-tube converter device can be obtained. Using a double-sided converter device can further increase the number of power modules, reduce space utilization, and improve power density.

[0081] Those skilled in the art will appreciate that all or part of the processes in the above-mentioned embodiment methods can be implemented by instructing the relevant hardware through a computer program, and the computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application may include at least one of non-volatile and volatile memory. Non-volatile memory may include read-only memory (ROM), magnetic tape, floppy disk, flash memory or optical memory, etc. Volatile memory may include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM).

[0082] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are for description only and do not represent the advantages and disadvantages of the embodiments.

[0083] It should be noted that, in this document, the terms "comprises," "includes," or any other variations thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus comprising a series of elements includes not only those elements but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or apparatus comprising the element.

[0084] In the several embodiments provided in this application, it should be understood that the disclosed devices and methods can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the units is merely a logical function division. In actual implementation, there may be other division methods, such as: multiple units or components can be combined, or can be integrated into another system, or some features can be ignored or not executed. In addition, the coupling, direct coupling, or communication connection between the components shown or discussed can be through some interfaces, and the indirect coupling or communication connection of the devices or units can be electrical, mechanical or other forms.

[0085] The units described above as separate components may or may not be physically separated, and the components displayed as units may or may not be physical units; they may be located in one place or distributed across multiple network units; some or all of the units may be selected according to actual needs to achieve the purpose of the scheme of this embodiment.

[0086] In addition, all functional units in the embodiments of the present application can be integrated into one processing unit, or each unit can be a separate unit, or two or more units can be integrated into one unit; the above-mentioned integrated units can be implemented in the form of hardware or in the form of hardware plus software functional units.

[0087] Those skilled in the art will understand that all or part of the steps of implementing the above-mentioned method embodiments can be completed by hardware related to program instructions, and the aforementioned program can be stored in a computer-readable storage medium. When the program is executed, it executes the steps of the above-mentioned method embodiments; and the aforementioned storage medium includes: mobile storage devices, read-only memories (ROMs), magnetic disks, optical disks, and other media that can store program codes.

[0088] Alternatively, if the above-mentioned integrated unit of the present application is implemented in the form of a software functional module and sold or used as an independent product, it can also be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the embodiment of the present application, or the part that contributes to the prior art, can be embodied in the form of a software product. The computer software product is stored in a storage medium and includes a number of instructions for enabling a controller to execute all or part of the methods described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as mobile storage devices, ROMs, magnetic disks or optical disks.

[0089] The above is merely an embodiment of the present application, but the scope of protection of the present application is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this application should be included in the scope of protection of this application. Therefore, the scope of protection of this application should be based on the scope of protection of the claims.

[0090] Description of Reference Numerals

[0091] In the figure: 1- radiator, 2- clamping tube, 3- inner tube, 4- outer tube module, 5- AC side quick connector, 61- first low-inductance busbar, 611- DC connection part, 612- DC transfer busbar, 6121- high potential connection bar, 6122- neutral potential connection bar, 6123- low potential connection bar, 613- device connection part, 62- AC copper busbar, 7- third low-inductance busbar, 8- second low-inductance busbar, 811- high potential connection terminal, 812- neutral potential connection terminal, 813- low potential connection terminal, 82- DC transfer busbar, 83- device connection part, 10- DC side quick connector, 11- support assembly, 12- control box, 13- pulse drive integrated board.

Claims

1. A method for determining a layout diagram of a converter device, wherein: include: Obtaining target requirements for the current conversion device; Determining the device type and arrangement of each device in the converter according to the target requirements; A device layout diagram of the converter is determined according to the arrangement mode and the device type.

2. The method according to claim 1, wherein: The devices include: an inner tube, a clamping tube and an outer tube; the arrangement includes: multiple inner tubes are connected in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to switch at a high frequency, and the outer tube and the clamping tube need to operate at a low frequency; the device type and arrangement of each device in the converter device are determined according to the target requirements, including: When the target requirement is that the inner tube needs high-frequency switching and the outer tube and the clamping tube need low-frequency operation, it is determined that the outer tube and the clamping tube are silicon devices, the inner tube is a silicon carbide device or a silicon device, and the arrangement method is that multiple inner tubes are connected in parallel.

3. The method according to claim 2, wherein: The device layout diagram determined according to the arrangement mode and the device type includes: The outer tubes and the clamping tubes are arranged in a matrix to form a two-by-two matrix, and the outer tubes and the clamping tubes are each in a column; The inner tubes are arranged in a row longitudinally and close to a side of the matrix where the clamping tubes are located.

4. The method according to claim 3, wherein: The outer tube includes: an upper outer tube and a lower outer tube; the clamping tube includes: an upper clamping tube and a lower clamping tube, and the device layout diagram also includes: The upper outer tube and the upper clamping tube are located in the same row, and the AC side of the upper outer tube is adjacent to the DC side of the upper clamping tube; The lower outer tube and the lower clamping tube are located in the same row, and the DC side of the lower outer tube is adjacent to the AC side of the lower clamping tube; The drain or collector of the inner tube is close to the clamping tube.

5. The method according to claim 1, wherein: The device includes: inner tube and outer tube modules; the arrangement includes: multiple inner tubes in parallel; the device types include: silicon devices and silicon carbide devices; the target requirements include: the inner tube needs to be switched at a low frequency, and the outer tube module needs to be operated at a high frequency; the device type and arrangement of each device in the converter device are determined according to the target requirements, including: When the target requirement is that the inner tube needs low-frequency switching and the outer tube module needs high-frequency operation, it is determined that the outer tube module is a silicon carbide device, the inner tube is a silicon device, and the arrangement is a single inner tube.

6. The method according to claim 5, wherein: The outer tube module includes: an upper outer tube module and a lower outer tube module; the device layout diagram also includes: Arrange the upper outer tube module and the lower outer tube module in a row from top to bottom, and the AC side of the upper outer tube module and the AC side of the lower outer tube module are located on the same side; The inner tubes are arranged in rows, and each inner tube has the same orientation, with the collector facing the upper outer tube module or The AC side of the lower outer tube module.

7. A current conversion device, wherein: include: Radiator, power devices, low-inductance busbar, AC side quick connector, DC side quick connector, support components, control box and pulse drive integrated board; The power device is arranged on one side of the heat sink according to the device layout diagram generated by the method according to any one of claims 1 to 4 and claims 5 to 6; The AC side quick connector is installed on the radiator and is electrically connected to the low-inductance busbar, and is used to output the AC power output by the power device to the load; The DC side quick connector is arranged on the heat sink, electrically connected to the low-inductance busbar, and is used to input DC power to the power device; One end of the support assembly is mounted on the radiator, and the other end is connected to the control box, so as to mount the control box and the radiator together; The pulse drive integrated board is installed in the control box and is electrically connected to the power device to control the on and off of the power device.

8. The device according to claim 7, wherein: When the power device is arranged on the heat sink according to the device layout diagram determined by the method described in any one of claims 1 to 4, the low-inductance busbar includes: a first low-inductance busbar and an AC copper busbar; The AC copper busbar is connected to the AC side quick connector and is electrically connected to the output end of the inner tube, and is used to output the AC power generated by the inner tube to the AC side quick connector; The first low-inductance busbar is connected to the DC side quick connector, and is simultaneously connected to the input end and output end of the outer tube and the clamping tube, and is also connected to the input end of the inner tube.

9. The device according to claim 8, wherein: The first low-inductance busbar comprises: a DC connection portion, a DC transfer busbar and a device connection portion; The DC connection part is provided with at least four connection blocks connected to the DC side quick connector; The DC connection part includes at least two neutral potential connection blocks, one high potential connection block and one low potential connection block; The device overlap portion comprises a plurality of connection ports and at least three connection layers, wherein the connection layers are respectively a neutral potential layer, a high potential layer and a low potential layer; The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube; The connection port arranged at the neutral potential layer is connected to the negative input terminal of the upper clamping tube and the positive input terminal of the lower clamping tube; The connection port provided in the low potential layer is connected to the negative electrode input terminal of the lower outer tube; The DC transfer busbar includes at least four connection bars, including at least two neutral potential connection bars, one high potential connection bar and one low potential connection bar; The four connection bars are arranged in two layers, and the high potential connection bar is arranged diagonally to the low potential connection bar; One end of the two neutral potential connection bars is respectively connected to the two neutral potential connection blocks of the DC connection part, and the other end is connected to the neutral potential layer of the device overlap part; One end of the high potential connection bar is connected to the high potential connection block of the DC connection part, and the other end is connected to the high potential layer of the device bridging part; One end of the low potential connection bar is connected to the low potential connection block of the DC connection part, and the other end is connected to the low potential layer of the device overlapping part.

10. The device according to claim 7, wherein: When the power device is arranged on the heat sink according to the device layout diagram determined by the method according to any one of claims 5 to 6, the low-inductance busbar includes: a second low-inductance busbar and a third low-inductance busbar; The second low-inductance busbar is connected to the DC side quick connector and is also connected to the input ends of the upper outer tube module and the lower outer tube module; The third low-inductance busbar is connected to the output ends of the upper outer tube module and the lower outer tube module, and is also connected to the input end and the output end of the inner tube, and is also connected to the AC side quick connector.

11. The device according to claim 10, wherein: The second low-inductance busbar comprises: a DC connection portion, a DC transfer busbar and a device connection portion; The DC connection part includes at least five connection terminals connected to the DC side quick connector, wherein the connection terminals include at least two neutral potential connection terminals, one high potential connection terminal and one low potential connection terminal; The five connecting terminals form a terminal row; When the high potential connection terminal is located in the middle position, there are two low potential connection terminals, which are arranged at two ends of the terminal row respectively; When the low potential connection terminal is located in the middle position, there are two high potential connection terminals, which are arranged at two ends of the terminal row respectively; The device overlap portion comprises at least a plurality of connection ports and at least three connection layers, wherein the three connection layers are respectively a high potential layer, a low potential layer and a neutral potential layer; The connection port provided on the high potential layer is connected to the positive input terminal of the upper outer tube module; A connection port provided at the neutral potential layer is connected to the negative input terminal of the upper outer tube module and the positive input terminal of the lower outer tube module; The connection port provided at the low potential layer is connected to the negative input terminal of the lower outer tube module; The DC transfer busbar includes at least five connection bars, one end of each of the connection bars is connected to a connection terminal of the DC connection part, and the other end is connected to a connection layer corresponding to the connection terminal.

12. The device according to any one of claims 8 to 11, wherein: The same structure is arranged on both sides of the heat sink, so that the converter becomes a double-sided converter.

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