Packaging module and manufacturing method therefor, power supply module and electronic device

Abstract

A packaging module and a manufacturing method therefor, a power supply module and an electronic device. The packaging module comprises: a substrate layer, wherein the substrate layer is composed of a semiconductor material, the substrate layer has a hole structure, and the substrate layer comprises a first surface and a second surface which are oppositely provided; a wiring layer, wherein the wiring layer is located on the second surface of the substrate layer, and the wiring layer is electrically connected to the substrate layer; and a magnetic energy storage layer, wherein the magnetic energy storage layer has an inductance function, the magnetic energy storage layer comprises a metal wrapping layer and a connector, the metal wrapping layer is located on the first surface of the substrate layer, and the connector is embedded in the hole structure and is electrically connected to the wiring layer. In the packaging module, the magnetic energy storage layer is directly electrically connected to the substrate layer, avoiding the problem of poor heat dissipation effect of the module caused by the traditional use of resin or ceramic substrates as carriers. Additionally, the wiring path of the module can be shortened, increasing the volume ratio of the substrate layer and the magnetic energy storage layer in the module, and realizing the miniaturization of the packaging module.

Description

Packaging module and manufacturing method thereof, power supply module, and electronic equipment

[0001] This application claims priority to the Chinese patent application filed with the State Intellectual Property Office on November 22, 2023, with application number 202311579641.2 and application name “Packaging module and its manufacturing method, power supply module, electronic device”, all contents of which are incorporated by reference in this application. Technical Field

[0002] The present application relates to the field of chip packaging technology, and specifically to a packaging module and a manufacturing method thereof, a power supply module, and an electronic device. Background Art

[0003] Semiconductor devices are widely used in electronic devices such as mobile phones and smart watches, and serve as the main electronic components of electronic devices. With the continuous advancement of technology, the size of electronic devices is becoming increasingly smaller, and the size of the packaging module has become the main factor restricting the miniaturization of electronic devices.

[0004] In the chip packaging process, the size of semiconductor devices is getting smaller and smaller, and the density of electronic components inside semiconductor devices is getting higher and higher. Component integration is usually used to reduce the size of the packaging module, which has led to the development of a system-in-package (SiP) module that packages multiple devices as a whole. Existing system-in-package modules integrate multiple devices and chips on a substrate, which can achieve a high-density distribution of semiconductor devices and effectively reduce the size of the module. However, due to the large number of chips required in electronic devices and the large number of packaging modules, the number of substrates carrying chips is large, making it impossible to achieve further miniaturization. Moreover, the high-density distribution of devices will cause the thermal density of the module to increase exponentially, resulting in poor heat dissipation of the module, making it difficult to meet the demand.

[0005] Summary of the Invention

[0006] In view of this, the present application provides a packaging module and a manufacturing method thereof, a power supply module, and an electronic device, which can improve the size of the packaging module and enhance the heat dissipation effect and efficiency of the packaging module.

[0007] In a first aspect, an embodiment of the present application provides a packaging module, comprising:

[0008] A substrate layer, the substrate layer is made of a semiconductor material, the substrate layer has a pore structure, and the substrate layer includes a first surface and a second surface arranged opposite to each other,

[0009] a wiring layer, the wiring layer being located on the second surface of the substrate layer and electrically connected to the substrate layer;

[0010] A magnetic energy storage layer has an inductance function and includes a metal wrapping layer and a connector. The metal wrapping layer is located on the first surface of the substrate layer, and the connector is embedded in the hole structure and electrically connected to the wiring layer.

[0011] In the above scheme, the packaging module of the present application includes a substrate layer, a wiring layer and a magnetic energy storage layer, the magnetic energy storage layer is used to realize the inductor function, and the substrate layer of semiconductor material is used to realize the chip function, wherein the magnetic energy storage layer includes a metal wrapping layer and a connector, and the metal wrapping layer is located on the first surface of the substrate layer. Due to the low thermal resistance of the metal material, the metal wrapping layer has excellent thermal conductivity, so that the heat generated by the substrate layer can be quickly dissipated through the metal wrapping layer, thereby improving the heat dissipation performance of the packaging module. The substrate layer and the connector are electrically connected through the wiring layer to realize the connection between the inductor and the chip, and the substrate layer and the wiring layer are connected to realize the signal connection between the substrate layer and the outside world. The magnetic energy storage layer and the substrate layer of the present application are in direct contact, and there are no other components between the magnetic energy storage layer and the substrate layer, which can effectively shorten the wiring path of the module, thereby reducing the power path of the module, thereby reducing the line loss of the module and improving the use efficiency of the module. In addition, the packaging module of the present application does not require a traditional substrate for carrying chips. It directly realizes the chip function through the substrate layer itself, while realizing the functions of carrying, arranging circuits in the packaging module, and electrically connecting the substrate layer with other components. It can maximize the volume share of electronic devices in the module, which is conducive to the miniaturization of the packaging module.

[0012] In some possible implementations, magnetic material is disposed in the metal wrapping layer.

[0013] In the above solution, the magnetic material is provided in the metal wrapping layer, which can enhance the magnetic induction intensity of the magnetic energy storage layer, enhance the inductance, and improve the quality of the inductor.

[0014] In some possible implementations, the metal wrapping layer and the connector are an integrally formed structure.

[0015] In this solution, the metal sheath and connector are integrally molded, which improves the current flow capacity of the magnetic energy storage layer, enabling the module to operate continuously and for long periods in high-current environments while maintaining low power consumption. Furthermore, this integrally molded structure offers a compact size and high strength, effectively saving module space and facilitating miniaturization.

[0016] In some possible implementations, the metal wrapping layer is a closed cavity structure.

[0017] In the above scheme, the metal cladding layer of the present application is provided with magnetic material inside, that is, the magnetic material is provided in a closed cavity structure, so that the cross-sectional area of ​​the metal cladding layer is larger and the area over which the current flows through the metal cladding layer is larger, thereby reducing the circuit impedance of the magnetic energy storage layer and reducing the loss of the magnetic energy storage layer.

[0018] In some possible implementations, the morphology of the metal wrapping layer includes at least one of a columnar shape, a pyramidal shape, a spherical shape, and a terraced shape.

[0019] In the above solution, the cross-sectional area of ​​the metal wrapping layer of the above morphology is relatively large, which is beneficial to reducing the circuit impedance of the magnetic energy storage layer and reducing the loss of the magnetic energy storage layer.

[0020] In some possible implementations, the pore structure has a pore diameter greater than or equal to 0.02 mm.

[0021] In the above scheme, the pore diameter of the hole structure can be 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.15mm, 0.2mm, 0.3mm, 0.4mm or 0.5mm, etc. The hole structure of the present application is used to connect the magnetic energy storage layer and the wiring layer. A hole structure with a smaller pore diameter can be set, which can achieve electrical connection between the connector and the wiring layer while minimizing the impact of the hole structure on the substrate layer.

[0022] In some possible implementations, the semiconductor material includes at least one of silicon, silicon dioxide, silicon nitride, and silicon carbide.

[0023] In the above scheme, the semiconductor material has stable properties, is easy to purify, and has huge energy storage capacity. It can be used to make a substrate layer, and circuits can be made on the surface of the material and inside it to embed electronic components (such as transistors, capacitors, logic gates, etc.) to realize the various functions of the chip.

[0024] In some possible implementations, the material of the metal wrapping layer includes at least one of copper, gold, and aluminum.

[0025] In the above solution, the electrical conductivity and thermal conductivity of the material are good, which can not only improve the inductance of the magnetic energy storage layer as an inductor, but also quickly conduct away the heat generated by the substrate layer.

[0026] In some possible implementations, the thickness of the metal wrapping layer is greater than or equal to 0.02 mm.

[0027] In the above scheme, the thickness of the metal coating layer can specifically be 0.02mm, 0.05mm, 0.08mm, 0.1mm, 0.15mm, 0.2mm, 0.3mm, 0.4mm or 0.5mm, etc. The thickness of the metal coating layer of the present application can be adjusted in a large range and can achieve a smaller thickness. Compared with the chip in the prior art, the thickness of the metal coating layer of the present application is smaller, which is conducive to the miniaturization of the packaging module. The thickness of the metal coating layer of the present application can be set according to the requirements of the sensitivity.

[0028] In some possible implementations, the thickness of the substrate layer is greater than or equal to 0.05 mm.

[0029] In the above scheme, the thickness of the substrate layer can specifically be 0.05mm, 0.08mm, 0.1mm, 0.15mm, 0.2mm, 0.3mm, 0.4mm or 0.5mm, etc. The thickness adjustment range of the substrate layer of the present application is large, and a smaller thickness can be achieved. Compared with the chip in the prior art, the thickness of the substrate layer of the present application is smaller, which is conducive to the miniaturization of the packaging module. The thickness of the substrate layer of the present application can be set according to the actual chip function requirements.

[0030] In some possible embodiments, the connector includes a first sub-connector and a second sub-connector, the first sub-connector has a positive port, the second sub-connector has a negative port, the hole structure includes a first through hole and a second through hole, the first sub-connector is embedded in the first through hole and electrically connected to the wiring layer, and the second sub-connector is embedded in the second through hole and electrically connected to the wiring layer.

[0031] In the above scheme, the present application connects the substrate layer and the magnetic energy storage layer according to circuit rules by setting a first sub-connector, a second sub-connector, a first through hole and a second through hole, thereby realizing the filtering, noise reduction, and current and voltage stabilization functions of the magnetic energy storage layer for the chip.

[0032] In some possible implementations, a circuit layer is provided inside the substrate layer.

[0033] In the above scheme, a circuit layer is set inside the substrate layer. The circuit layer is the circuit component layer inside the substrate layer, which mainly includes transistors (transistors), storage units, diodes, resistors, wires, pins, etc., which are used to realize the chip function.

[0034] In a second aspect, an embodiment of the present application provides a method for manufacturing a packaging module, comprising the following steps:

[0035] A substrate layer is manufactured, and a hole structure is formed in the substrate layer, wherein the substrate layer includes a first surface and a second surface that are oppositely disposed;

[0036] Producing a substrate layer, wherein the substrate layer is made of a semiconductor material, a hole structure is formed on the substrate layer, and the substrate layer includes a first surface and a second surface disposed opposite to each other;

[0037] A magnetic energy storage layer is fabricated on the first surface of the substrate layer, wherein the magnetic energy storage layer has an inductance function and comprises a connected metal wrapping layer and a connector, wherein the metal wrapping layer is located on the first surface of the substrate layer, and the connector is embedded in the hole structure;

[0038] A wiring layer is formed on the second surface of the substrate layer, and the wiring layer is electrically connected to the connecting body.

[0039] In the above scheme, the present application directly produces a magnetic energy storage layer on the substrate layer. The magnetic energy storage layer includes a connected metal wrapping layer and a connector. The metal wrapping layer has excellent thermal conductivity, so that the heat generated by the substrate layer is quickly discharged through the metal wrapping layer, thereby improving the heat dissipation effect of the package module. The connector is embedded in the hole structure and electrically connected to the wiring layer, which can effectively shorten the wiring path of the module and reduce the power path of the module, thereby reducing the line loss of the module and improving the utilization efficiency of the module. In addition, the direct connection of the magnetic energy storage layer and the substrate layer of the present application as the main structure of the module can maximize the volume ratio of electronic devices in the module and realize the miniaturization of the package module.

[0040] In some feasible embodiments, the method of manufacturing the magnetic energy storage layer includes:

[0041] Filling the hole structure with a first metal material to form a connector, and forming a cavity with an opening on the first surface of the substrate layer;

[0042] Filling the cavity with magnetic material;

[0043] The cavity is sealed with a second metal material.

[0044] In the above scheme, the present application prepares the magnetic energy storage layer through a segmented preparation process, first preparing a cavity with an opening, then filling the cavity with magnetic material, and finally closing the cavity to form an inductor. The closed cavity can completely wrap the magnetic material, which can enhance the magnetic induction strength of the magnetic core, enhance the inductance, and improve the quality of the inductor.

[0045] In some feasible embodiments, the magnetic material includes magnetic fluid and / or magnetic powder.

[0046] In the above scheme, the magnetic fluid is a stable colloidal liquid formed by mixing magnetic solid particles with a diameter of nanometers (less than 10 nanometers), a base carrier liquid, and a surfactant. It has both the fluidity of a liquid and the magnetism of a solid magnetic material. It has no magnetic attraction in the crystalline state, but exhibits magnetism when an external magnetic field is applied. This facilitates the filling of the magnetic material into the cavity, ensures sufficient contact between the magnetic fluid and the cavity, and ensures the magnetism required for the inductor to operate. Magnetic powder is a powdered material. Commonly used magnetic powders include at least one of iron powder core, permalloy powder, and sendust powder. Magnetic powder has low magnetic permeability and constant magnetic permeability characteristics. The powder size is small, and skin effect is basically non-existent. The change of magnetic permeability with frequency is relatively stable, which is conducive to improving the stability of the inductance of the magnetic energy storage layer.

[0047] In a third aspect, an embodiment of the present application further provides a power supply module, including:

[0048] a circuit board layer, wherein the circuit board layer has a third through hole and a fourth through hole, and the circuit board layer includes a first surface and a second surface disposed opposite to each other;

[0049] A power supply, a power chip and a packaging module are provided on the circuit board layer, the packaging module is electrically connected to the power supply through the third through hole, and the packaging module is electrically connected to the power chip through the fourth through hole;

[0050] a first heat sink, the first heat sink being arranged on a side of the chip away from the circuit board layer;

[0051] a second radiator, the second radiator being arranged on a side of the packaging module away from the circuit board layer;

[0052] The packaging module includes the packaging module described in the first aspect or the packaging module manufactured by the manufacturing method described in the second aspect.

[0053] In the above scheme, since the main part of the packaging module of the present application only includes the magnetic energy storage layer and the substrate layer, the volume of the packaging module on the circuit board layer is relatively small, the layout of the power module can be optimized, so that the first heat sink and the second heat sink can be set in the power module of the present application. The first heat sink and the second heat sink are used for two-way heat dissipation of the packaging module and the chip, thereby greatly improving the heat dissipation effect of the power module.

[0054] In a fourth aspect, an embodiment of the present application provides an electronic device, which includes the packaging module described in the first aspect, or the packaging module manufactured by the manufacturing method described in the second aspect, or the power supply module described in the third aspect.

[0055] By adopting the solution provided by the embodiment of the present application, the packaging module avoids the traditional use of a substrate made of materials such as resin or ceramic, and directly stacks the substrate layer and the magnetic energy storage layer and electrically connects them through the wiring layer. In this way, the substrate layer is used to realize the chip function and serves as a carrier platform for the packaging module, which can increase the volume ratio of electronic devices in the packaging module, which is conducive to the high integration and miniaturization of the packaging module. Moreover, the magnetic energy storage layer, as an excellent conductor, can quickly transfer the heat generated by the substrate layer, thereby improving the heat dissipation performance of the packaging module. At the same time, the magnetic energy storage layer and the substrate layer are electrically connected through the pore structure inside the substrate layer, which can effectively shorten the power path of the module and reduce line loss. The packaging module of the present application can simultaneously achieve high-density miniaturization, high efficiency and strong heat dissipation capability of the module, and has good application prospects. BRIEF DESCRIPTION OF THE DRAWINGS

[0056] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0057] FIG1 is a schematic cross-sectional view of a first packaging module of prior art 1 provided by an embodiment of the present application;

[0058] FIG2 is a schematic cross-sectional view of a second packaging module of prior art 2 provided in an embodiment of the present application;

[0059] FIG3 is a schematic diagram of the cross-sectional structure of a packaging module provided in an embodiment of the present application;

[0060] FIG4 is a schematic diagram of the cross-sectional structure of the substrate layer and the hole structure provided in an embodiment of the present application;

[0061] FIG5 is a schematic diagram of the cross-sectional structure of a magnetic energy storage layer provided in an embodiment of the present application;

[0062] FIG6 is a flowchart of a preparation process of a packaging module according to an embodiment of the present application;

[0063] FIG7 is a schematic diagram of a cross-sectional structure of a first conductive bump prepared on the second surface of a substrate layer according to an embodiment of the present application;

[0064] FIG8 is a flow chart of preparing a magnetic energy storage layer according to an embodiment of the present application;

[0065] FIG9 is a schematic diagram of a cross-sectional structure of a cavity with an opening provided in an embodiment of the present application;

[0066] FIG10 is a schematic diagram of a cross-sectional structure of a cavity with an opening filled with magnetic material provided in an embodiment of the present application;

[0067] FIG11 is a schematic diagram of a cross-sectional structure of a cavity having an opening after being closed according to an embodiment of the present application;

[0068] FIG12 is a schematic diagram of a cross-sectional structure of an insulating layer covering the surface of a magnetic material provided in an embodiment of the present application;

[0069] FIG13 is a schematic cross-sectional view of a packaging module with an insulating layer provided in an embodiment of the present application;

[0070] FIG14 is a schematic structural diagram of a power supply module provided in an embodiment of the present application;

[0071] FIG15 is a schematic diagram of the structure of an electronic device provided in an embodiment of the present application.

[0072] In the drawings: 100 - first packaging module; 101 - first substrate; 102 - first chip; 103 - first inductor; 104 - first capacitor; 105 - first resistor; 200 - second packaging module; 201 - second substrate; 202 - second chip; 203 - second inductor; 204 - second capacitor; 10 - packaging module; 1 - substrate layer; 2 - magnetic energy storage layer; 21 - metal wrapping layer; 211 - cavity; 2111 - first surface; 21111 - first segment; 21112 - second segment; 2112 - second surface; 2113 - third surface; 212 - cover; 22 - connector; 221 - first sub-connector; 222 - second sub-connector; 23 - magnetic material; 24 - insulating layer; 3 - hole structure; 31-first through hole; 32-second through hole; 4-wiring layer; 5-first conductive bump; 6-second conductive bump; 20-circuit board layer; 201-third through hole; 202-fourth through hole; 30-power supply; 40-power chip; 50-first heat sink; 60-second heat sink; 70-third capacitor; 1000-electronic device; 1001-housing; 1002-motherboard. DETAILED DESCRIPTION

[0073] In order to better understand the technical solution of the present application, the embodiments of the present application are described in detail below with reference to the accompanying drawings.

[0074] It should be clear that the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0075] The terms used in the embodiments of the present application are for the purpose of describing specific embodiments only and are not intended to limit the present application. The singular forms "a", "an", "the" and "the" used in the embodiments of the present application and the appended claims are also intended to include plural forms unless the context clearly indicates otherwise.

[0076] It should be understood that the term "and / or" as used herein simply describes a relationship between associated objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A alone, A and B together, or B alone. Furthermore, the character " / " in this document generally indicates an "or" relationship between the associated objects.

[0077] In the related art, the layout of the packaging module generally uses a resin or ceramic substrate to load the chip and other passive components (capacitors, inductors and resistors, etc.). The module can be formed by burying the chip in the substrate or attaching the chip to the surface of the substrate. As shown in Figure 1, it is a schematic diagram of the cross-sectional structure of a first packaging module 100 provided by an existing technology. The first packaging module 100 includes a first substrate 101, a first chip 102 and a first capacitor 104 are buried in the first substrate 101, a first inductor 103 and a first resistor 105 are attached to the surface of the first substrate 101, and the first chip 102 and the first inductor 103 are arranged relative to each other to obtain the first packaging module 100. In the above-mentioned packaging module, since the first chip 102 is arranged inside the first substrate 101, the volume of the first chip 102 / first packaging module 100 is not high, which reduces the utilization rate of the first chip 102, resulting in a larger module size, which is not conducive to the development of module miniaturization. In addition, since the first chip 102 needs to dissipate heat toward the first substrate 101 and the first inductor 103, on the one hand, the first inductor 103 blocks the upward heat dissipation of the first chip 102, resulting in a significant decrease in the heat dissipation capacity of the module; on the other hand, since the first chip 102 is inside the first substrate 101, the temperature of the first substrate 101 is relatively high, affecting the selection of other devices on the first substrate 101. Moreover, this manufacturing process is complex and costly. As shown in Figure 2, a cross-sectional structural diagram of a second packaging module 200 provided by another prior art is shown. The second packaging module 200 includes a second substrate 201, a second inductor 203 embedded in the second substrate 201, a second capacitor 204 and a second chip 202 arranged on the surface of the second substrate 201, and the second chip 202 and the second inductor 203 arranged correspondingly to obtain the second packaging module 200. In the above packaging module, since the second inductor 203 is arranged inside the second substrate 201, on the one hand, the volume ratio of the second inductor 203 / the second packaging module 200 is not high, which reduces the utilization rate of the second inductor 203 and results in poor performance of the second inductor 203; on the other hand, the second inductor 203 needs to be placed inside the second substrate 201, which requires high precision for the second inductor 203. It is also necessary to additionally arrange auxiliary materials between the second inductor 203 and the second substrate 201 to prevent the second inductor 203 from delaminating from the second substrate 201, which greatly increases the difficulty of the manufacturing process. In addition, the power path between the second inductor 203 and the second chip 202 is relatively far, which greatly reduces the efficiency of the module.

[0078] In response to the above problems, an embodiment of the present application provides a packaging module 10 and a manufacturing method thereof, a power supply module, and an electronic device. The packaging module 10 includes: a substrate layer 1, the material of the substrate layer 1 is a semiconductor material, the substrate layer 1 has a hole structure 3, the substrate layer 1 includes a first surface a and a second surface a' arranged opposite to each other, a wiring layer 4, the wiring layer 4 is located on the second surface a' of the substrate layer 1, and the wiring layer 4 is electrically connected to the substrate layer 1; a magnetic energy storage layer 2, the magnetic energy storage layer 2 has an inductance function, the magnetic energy storage layer 2 includes a metal wrapping layer 21 and a connector 22, the metal wrapping layer 21 is located on the first surface a of the substrate layer 1, and the connector 22 is embedded in the hole structure 3 and electrically connected to the wiring layer 4. In the packaging module 10 of the present application, the magnetic energy storage layer 2 is used to realize the inductance function, and the substrate layer 1 is used to realize the chip function, wherein the magnetic energy storage layer 2 includes a metal wrapping layer 21 and a connector 22, and the metal wrapping layer 21 is located on the first surface a of the substrate layer 1, that is, the metal wrapping layer 21 is in direct contact with the substrate layer 1. Due to the low thermal resistance of the metal material, the metal wrapping layer 21 has excellent thermal conductivity, so that the heat generated by the substrate layer 1 can be quickly dissipated through the metal wrapping layer 21, thereby improving the heat dissipation performance of the packaging module 10. Moreover, there are no other components between the magnetic energy storage layer 2 and the substrate layer 1 of the present application, which can effectively shorten the wiring path of the module, thereby reducing the power path of the module, thereby reducing the line loss of the module and improving the use efficiency of the module. In addition, the packaging module 10 of the present application does not require a substrate made of a traditional resin or ceramic material, and directly realizes the function of carrying, arranging the circuits in the packaging module 10 and the electrical connection between the substrate layer 1 and other components through the substrate layer 1, which can maximize the volume ratio of electronic devices in the module, which is conducive to the miniaturization of the packaging module 10.

[0079] The packaging module 10 provided in the embodiment of the present application is applied to electronic devices, such as common terminals such as mobile phones, smart watches, and laptop computers.

[0080] The packaging module 10 provided in the embodiment of the present application is described in detail below with reference to specific drawings.

[0081] Please refer to Figure 3, which is a schematic diagram of the structure of the packaging module 10 provided in an embodiment of the present application, including a substrate layer 1 and a magnetic energy storage layer 2. The magnetic energy storage layer 2 has an inductance function, that is, the magnetic energy storage layer 2 of the present application can be used as an inductor. The material of the substrate layer is a semiconductor material, that is, the substrate layer can be used to realize the chip function. The substrate layer 1 and the magnetic energy storage layer 2 are stacked in a vertical direction. The substrate layer 1 includes a first surface a and a second surface a' arranged oppositely. The magnetic energy storage layer 2 is arranged on the first surface a of the substrate layer 1. The packaging module 10 of the present application does not have traditional resin or ceramic materials. The substrate layer 1 realizes the chip function and serves as a supporting platform for the packaging module 10, so that the length and width of the packaging module 10 are determined by the length and width of the substrate layer 1, and the thickness of the packaging module 10 is determined by the substrate layer 1 and the magnetic energy storage layer 2. Generally, the thickness of the substrate layer 1 is relatively thin, at the nanometer level. Therefore, the thickness of the module is mainly determined by the thickness of the magnetic energy storage layer 2. The present application can customize the thickness of the magnetic energy storage layer 2 according to the sensitivity requirements of the packaging module 10, thereby determining the thickness of the packaging module 10, and can achieve the miniaturization design of the packaging module 10 to the greatest extent. Among them, the vertical direction of the packaging module 10 is also the thickness direction of the packaging module 10, which can also refer to the thickness direction of the substrate layer 1.

[0082] The substrate layer 1 has a hole structure 3, please refer to Figure 4, which is a schematic diagram of the cross-sectional structure of the substrate layer 1 having the hole structure 3; the hole structure 3 can be a via (also called a metallized hole), and can further be a through hole. The hole structure 3 penetrates the substrate layer 1 in the thickness direction of the substrate layer 1, thereby providing a connection site for coupling the magnetic energy storage layer 2 and the substrate layer 1.

[0083] Optionally, the number of hole structures 3 is at least one, specifically one, two, three, etc., and this application does not impose any limitation thereto. Please continue to refer to FIG4 , which is a schematic diagram of the structure of a package module 10 in which the hole structure 3 includes two hole structures, namely, the hole structure 3 includes a first through hole 31 and a second through hole 32, and the first through hole 31 and the second through hole 32 extend along the thickness direction of the substrate layer 1. It will be understood that during the preparation process of the package module 10, the hole structure 3 is filled with the connector 22, so that the existence of the hole structure 3 cannot be observed in the cross-sectional view of the package module 10 shown in FIG3 .

[0084] In some possible implementations, please continue to refer to Figure 3. A wiring layer 4 is provided on the second surface a' of the substrate layer 1, that is, the wiring layer 4 is provided on the side of the substrate layer 1 facing away from the magnetic energy storage layer 2. The wiring layer 4 is electrically connected to the substrate layer 1, and the wiring layer 4 is electrically connected to the magnetic energy storage layer 2. That is, the wiring layer 4 serves as the input and output port of the substrate layer 1 signal and the connecting link between the substrate layer 1 and the magnetic energy storage layer 2, and plays the role of electrical extension and interconnection.

[0085] In the present application, the substrate layer 1 includes a first surface a and a second surface a' arranged opposite to each other, the magnetic energy storage layer 2 is arranged on the first surface a of the substrate layer 1, and the wiring layer 4 is arranged on the second surface a' of the substrate layer 1. The present application does not limit the first surface a and the second surface a', but only indicates that the magnetic energy storage layer 2 and the wiring layer 4 are located on two different and opposite surfaces of the substrate layer 1.

[0086] Optionally, please continue to refer to Figure 3. The wiring layer 4 includes metal wires, which are electrically connected to the magnetic energy storage layer 2. The wiring layer 4 can be a redistribution layer (RDL), an inline redistribution layer (IRDL), etc. The material of the metal wires includes at least one of aluminum and copper. The metal wires in the wiring layer 4 can connect the physical signals of the substrate layer 1 with the magnetic energy storage layer 2 and the external circuit.

[0087] In some possible embodiments, please continue to refer to Figure 3. The substrate layer 1 has a first conductive bump 5 on the side facing the wiring layer 4, and the first conductive bump 5 is electrically connected to the wiring layer 4. The first conductive bump 5 serves as the signal output and input port of the substrate layer 1, and is connected to the magnetic energy storage layer 2 through the wiring layer 4. The first conductive bump 5 is small in size and has excellent electrical and thermal conductivity. It can provide a low inductance and low resistance signal for the interconnection between the substrate layer 1 and the magnetic energy storage layer 2, which not only reduces the size of the module, but also has a short connection path, which is conducive to shortening the layout and wiring path, so that the components in the module can be highly integrated and have high efficiency. Optionally, the material of the first conductive bump 5 includes Pb / Sn alloy.

[0088] Optionally, there may be a plurality of first conductive bumps 5 , wherein a portion of the first conductive bumps 5 serve as signal input ports, and another portion of the first conductive bumps 5 serve as signal output ports.

[0089] Optionally, please continue to refer to Figure 3. The wiring layer 4 has a patterned structure, that is, the wiring layer 4 includes a plurality of spaced metal wires, the number of the metal wires is the same as the number of the first conductive bumps 5, and the positions of the metal wires correspond one-to-one to the positions of the first conductive bumps 5. The metal wires close to the hole structure 3 are electrically connected to the connector 22 in the hole structure 3 to achieve electrical connection between the wiring layer 4 and the magnetic energy storage layer 2.

[0090] During the manufacture of the package module 10 of the present application, a film-forming process can be used to form a wiring layer 4 using the substrate layer 1 as a base, so that the metal wires and the first conductive bumps 5 are metallized and connected. The wiring layer 4 is manufactured with high precision, which can ensure the accuracy of the alignment and binding of the substrate layer 1 to the wiring layer 4. Furthermore, the metal wires can be manufactured from a single metal layer, two metal layers, or multiple metal layers.

[0091] In some possible implementations, a circuit layer is provided inside the substrate layer 1 (the circuit layer is not shown in the diagram shown in FIG3 ), and the circuit layer is a circuit pattern formed on the substrate layer 1 through a photolithography process, thereby realizing chip functions.

[0092] In some possible embodiments, referring to FIG. 3 , a second conductive bump 6 is provided on the side of the wiring layer 4 facing away from the first conductive bump 5. A plurality of second conductive bumps 6 are provided, and the plurality of second conductive bumps 6 are electrically connected to the wiring layer 4. That is, a first conductive bump 5 and a second conductive bump 6 are provided on both sides of the wiring layer 4, respectively, and the positions of the first conductive bump 5 and the second conductive bump 6 correspond one-to-one. Physical signals from the substrate layer 1 can be connected to metal wires via the first conductive bump 5, and then to the second conductive bump 6 via the metal wires. In module applications, the second conductive bump 6 connects the package module 10 to an external circuit, thereby interconnecting the package module 10 with external signals. Optionally, the second conductive bump 6 is made of a Pb / Sn alloy. The second conductive bump 6 is small in size and has excellent electrical and thermal conductivity. It can provide low-inductance and low-resistance signals for the chip-module-external circuit interconnection, thereby improving power supply performance. The packaging module 10 is electrically connected to the external circuit via the second conductive bumps 6, thereby achieving communication between the chip and the external circuit.

[0093] In some possible embodiments, the semiconductor material includes at least one of silicon, silicon dioxide, silicon nitride and silicon carbide, that is, the substrate layer 1 of the present application is essentially a wafer, which can also be called a silicon chip. The above-mentioned silicon semiconductor material has stable properties, is easy to purify, and has huge energy storage capacity. It can be used to make the substrate layer 1, and to make circuits and embed electronic components (such as transistors, capacitors, logic gates, etc.) on the substrate to ultimately realize the chip function.

[0094] In some possible embodiments, the thickness of the substrate layer 1 is greater than or equal to 0.05 mm, and can specifically be 0.05 mm, 0.08 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm, etc. The thickness adjustment range of the substrate layer of the present application is large, and a smaller thickness can be achieved. Compared with the chip in the prior art, the thickness of the substrate layer of the present application is smaller, which is conducive to the miniaturization of the packaging module. The thickness of the substrate layer of the present application can be set according to the actual chip function requirements.

[0095] In some possible embodiments, please refer to Figures 3 and 5. The magnetic energy storage layer 2 includes a metal wrapping layer 21 and a connector 22, wherein a magnetic material 23 is provided inside the metal wrapping layer 21, and the metal wrapping layer 21 that wraps the magnetic material 23 can realize an inductor function. The connector 22 is arranged on the side of the metal wrapping layer 21 close to the substrate layer 1, and the connector 22 is embedded in the hole structure 3 and connected to the wiring layer 4, thereby realizing electrical connection with the substrate layer 1. In this application, the connector 22 is embedded in the substrate layer 1 and electrically connected to the wiring layer 4 at the bottom of the substrate layer 1, that is, a part of the magnetic energy storage layer 2 is arranged on the surface of the substrate layer 1, and a part is arranged in the hole structure 3 of the substrate layer 1. The metal wrapping layer 21 and the magnetic material 23 located on the surface of the substrate layer 1 realize the inductor function, and the connector 22 located in the hole structure 3 realizes the electrical coupling connection between the magnetic energy storage layer 2 and the substrate layer 1. In this way, the volume of the packaging module can be greatly reduced, and the power path of the module can be shortened.

[0096] Optionally, the metal wrapping layer 21 and the connector 22 are an integrally formed structure. During the manufacturing process of the packaging module 10 of the present application, the connector 22 can be formed in the hole structure 3 of the substrate layer 1 by electroplating, chemical plating, etc., and the plating process is continued to form the metal wrapping layer 21 on the first surface of the substrate layer 1. It can be understood that since the magnetic material 23 needs to be set inside the metal wrapping layer 21, a cavity 211 structure with an opening is first formed in the above-mentioned plating process, and the magnetic material 23 is injected into the cavity 211, and finally the cavity 211 is closed to obtain the metal wrapping layer 21.

[0097] Optionally, please continue to refer to Figure 5. The connector 22 includes a first sub-connector 221 and a second sub-connector 222. The first sub-connector 221 and the second sub-connector 222 are located on the same side surface of the metal wrapping layer 21. The first sub-connector 221 has a positive electrode port and the second sub-connector 222 has a negative electrode port, thereby achieving current conduction. Please continue to refer to Figures 4 and 5. The first sub-connector 221 is embedded in the first through hole 31, and the second sub-connector 222 is embedded in the second through hole 32. The first sub-connector 221 and the second sub-connector 222 of the present application act as connecting lines between the magnetic energy storage layer 2 and the substrate layer 1, and are arranged inside the substrate layer 1, which not only shortens the power path of the module and reduces the line loss, but also saves space for additional connection lines and reduces the size of the module. Moreover, since the connector 22 is embedded in the hole structure 3, the thickness of the metal wrapping layer 21 determines the thickness of the magnetic energy storage layer 2, that is, the thickness of the inductor, and thus determines the thickness of the module. Those skilled in the art can customize the thickness of the metal wrapping layer 21 according to the inductance requirements of the module.

[0098] Optionally, the number of the first connectors 22 and the second connectors 22 can be one, two, three or four, etc. Correspondingly, the number of the first through holes 31 and the second through holes 32 can be one, two, three or four, etc. Optionally, the number of the first connectors 22 is the same as the number of the first through holes 31, and the number of the second connectors 22 is the same as the number of the second through holes 32. For example, when designing the number of the first connectors 22 and the second connectors 22, it can be set based on the aperture of the preset hole structure 3, and the number and position of the first through holes 31 can be further determined according to the number and position of the first connectors 22.

[0099] Optionally, the magnetic material 23 includes magnetic fluid and magnetic powder. Both the magnetic fluid and the magnetic powder are magnetic. When power is applied, a magnetic field can be generated around the metal wrapping layer 21, so that the magnetic fluid or magnetic powder is magnetized and stores magnetic energy.

[0100] In some possible embodiments, the morphology of the metal wrapping layer 21 includes at least one of a cylindrical shape, a conical shape, a spherical shape, and a table shape. For example, as shown in FIG3 , the morphology of the metal wrapping layer 21 is a rectangular parallelepiped, which can wrap the magnetic material 23 therein, thereby ensuring the realization of the inductance function of the magnetic energy storage layer 2. At the same time, the metal wrapping layer 21 with the above morphology has a larger cross-sectional area, which is beneficial to reducing the circuit impedance of the magnetic energy storage layer 2 and reducing the loss of the magnetic energy storage layer 2. Of course, the morphology of the metal wrapping layer 21 of the present application is not limited to this, and can also be other shapes with a wrapping effect, which is not limited in the present application.

[0101] In some possible embodiments, the pore diameter of the hole structure 3 is greater than or equal to 0.02 mm, and the pore diameter of the hole structure can be 0.02 mm, 0.05 mm, 0.08 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm, etc. The hole structure of the present application is used to connect the magnetic energy storage layer and the wiring layer. A hole structure with a smaller pore diameter can be set, which can achieve electrical connection between the connector and the wiring layer while minimizing the impact of the hole structure on the substrate layer.

[0102] In some possible embodiments, the metal wrapping layer 21 is made of at least one of copper, gold, and aluminum. These materials have good electrical and thermal conductivity, which can not only increase the inductance of the magnetic energy storage layer 2 as an inductor, but also quickly dissipate the heat generated by the substrate layer 1.

[0103] In some possible embodiments, the thickness of the metal wrapping layer 21 is greater than or equal to 0.02 mm. The thickness of the metal wrapping layer can specifically be 0.02 mm, 0.05 mm, 0.08 mm, 0.1 mm, 0.15 mm, 0.2 mm, 0.3 mm, 0.4 mm or 0.5 mm, etc. The thickness of the metal wrapping layer of the present application can be adjusted in a large range and can achieve a smaller thickness. Compared with the chip in the prior art, the thickness of the metal wrapping layer of the present application is smaller, which is conducive to the miniaturization of the packaging module. The thickness of the metal wrapping layer of the present application can be set according to the requirement of the sensitivity.

[0104] The present embodiment provides a method for manufacturing a packaging module 10, as shown in FIG6 , including the following steps:

[0105] A substrate layer 1 is manufactured. The substrate layer 1 is made of a semiconductor material. A hole structure 3 is formed in the substrate layer 1. The substrate layer 1 includes a first surface and a second surface opposite to each other.

[0106] Fabricate a wiring layer 4 on the second surface of the substrate layer 1;

[0107] A magnetic energy storage layer 2 is fabricated on the first surface of the substrate layer 1. The magnetic energy storage layer 2 has an inductance function. The magnetic energy storage layer 2 includes a metal wrapping layer 21 and a connector 22. The metal wrapping layer 21 is located on the first surface of the substrate layer 1. The connector 22 is embedded in the hole structure 3 and electrically connected to the wiring layer 4.

[0108] In the above scheme, the present application directly makes the magnetic energy storage layer 2 on the substrate layer 1. The magnetic energy storage layer 2 has excellent thermal conductivity, so that the heat generated by the substrate layer 1 can be quickly discharged through the magnetic energy storage layer 2, thereby improving the heat dissipation effect of the packaging module 10. Moreover, the connector 22 is embedded in the hole structure 3 and electrically connected to the wiring layer 4, which can effectively shorten the wiring path of the module, thereby reducing the power path of the module, thereby reducing the line loss of the module and improving the utilization efficiency of the module. In addition, the magnetic energy storage layer 2 and the substrate layer 1 of the present application are directly connected as the main structure of the module, which can maximize the volume ratio of the chip or inductor in the module and realize the miniaturization of the packaging module 10.

[0109] The following describes in detail the method for manufacturing the packaging module 10 of the present application.

[0110] Step S100, please continue to refer to FIG. 4 , a substrate layer 1 is manufactured. The substrate layer 1 is made of semiconductor material, and a hole structure 3 is opened on the substrate layer 1. The substrate layer 1 includes a first surface a and a second surface a′ opposite to each other.

[0111] As a possible implementation method, the material of the substrate layer 1 includes at least one of silicon, silicon dioxide, silicon nitride and silicon carbide. Taking silicon as an example, silicon can be purified and dissolved into a liquid, and then pulled into a columnar silicon crystal column. The transistor is placed on the silicon lattice. The quality of the silicon crystal column is affected by controlling parameters such as the speed and temperature of pulling up the silicon crystal column. The larger the size of the silicon crystal column, the higher the technical difficulty. After completion, a diamond knife is used to cut the entire silicon crystal column into thin slices, which are polished to become wafers, which are the substrate layer 1 of this application. The thickness of the substrate layer 1 can be controlled by the step of cutting the silicon crystal column into thin slices. Of course, commercially available wafers can also be directly purchased as the substrate layer 1.

[0112] Optionally, after obtaining the substrate layer 1 , the substrate layer 1 needs to be wet cleaned, photolithographically processed, ion implanted, etched, plasma rinsed, heat treated, and various substances deposited on the wafer surface in order to realize chip functions.

[0113] As a possible implementation method, the present application uses a through-silicon via (TSV) process to form the hole structure 3, specifically, deep reactive ion etching (DRIE). The TSV process has good electrical performance, low energy consumption, and a small form factor, which can effectively improve the accuracy of the hole structure 3. The present application does not limit the process for forming the hole structure 3, and those skilled in the art can select the process parameters according to actual needs.

[0114] As a possible implementation method, the manufacturing method of the present application also includes: forming a circuit layer inside the substrate layer 1 (the circuit layer is not shown in Figure 4), by forming a pattern composed of semiconductor materials or media inside the substrate layer 1, that is, the circuit layer, the circuit layer includes but is not limited to transistors (transistors), storage units, diodes, resistors, wiring, pins and other circuit components, the circuit layer and the substrate layer 1 structure are used together to realize the bare chip function.

[0115] As a possible implementation method, the manufacturing method of the present application also includes: performing oxidation treatment on the surface of the substrate layer 1 to form an oxide layer, which is used to protect the substrate layer 1, so that the substrate layer 1 is not affected by chemical impurities, avoids leakage current entering the circuit, prevents diffusion during ion implantation, and prevents the substrate layer 1 from slipping during etching.

[0116] As a possible implementation method, the manufacturing method of the present application also includes: preparing a first conductive bump 5 on the second surface of the substrate layer 1. The resulting cross-sectional structure diagram is shown in Figure 7, and the signal of the substrate layer 1 is input or output through the first conductive bump 5. The first solder can be welded to the second surface of the substrate layer 1 through processes such as evaporation, template printing, sputtering, and electroplating. The first solder is usually composed of a metal or alloy of at least one of nickel, copper, tin, and lead. The present application does not limit the process sequence for manufacturing the first conductive bump 5. The manufacturing of the first conductive bump 5 is carried out before forming the hole structure 3 on the substrate layer 1 or after forming the hole structure 3 on the substrate layer 1.

[0117] Step S200: A magnetic energy storage layer 2 is formed on the first surface a' of the substrate layer 1. The magnetic energy storage layer 2 has an inductance function. The magnetic energy storage layer 2 includes a metal wrapping layer 21 and a connector 22. The metal wrapping layer 21 is located on the first surface of the substrate layer 1. The connector 22 is embedded in the hole structure 3 and electrically connected to the wiring layer 4.

[0118] As a possible implementation, the present application adopts a segmented preparation process to prepare the magnetic energy storage layer 2. Specifically, referring to FIG8 , the method for preparing the magnetic energy storage layer 2 includes:

[0119] Step S201: A first metal material is filled into the hole structure 3 using a first plating process to form a connector 22, and a cavity 211 having an opening is formed on the first surface of the substrate layer 1. The resulting cross-sectional structure is shown in FIG9 . The cavity 211 has an opening, and the opening is reserved to facilitate the subsequent filling of the magnetic material 23. The first plating process includes at least one of electroplating and chemical vapor deposition processes. Those skilled in the art can adjust the specific parameters of the first plating process based on the aperture of the hole structure 3 to form a connector 22 and cavity 211 of a specific thickness (diameter) in the hole structure 3.

[0120] Optionally, when the hole structure 3 includes a first through hole 31 and a second through hole 32, in the first plating process, the order of filling the first through hole 31 and the second through hole 32 is not limited and can be performed simultaneously, or the first through hole 31 can be filled first and then the second through hole 32. Of course, the second through hole 32 can also be filled first and then the first through hole 31.

[0121] Further, referring to FIG9 , the cavity 211 having an opening includes a first surface 2111 horizontally disposed on the first surface a of the substrate layer 1, and a second surface 2112 and a third surface 2113 perpendicular to the first surface a. The second surface 2112 and the third surface 2113 are parallel to each other and positioned correspondingly. The first surface 2111, the second surface 2112, and the third surface 2113 together form a cavity 211 structure having an opening at the top. It should be understood that the first surface 2111 includes a first section 21111 and a second section 21112. The first section 21111 is connected to the first sub-connector 221, and the second section 21112 is connected to the second connector 22. A gap is formed between the first section 21111 and the second section 21112, and the width of the gap is related to the position of the first through hole 31 and the second through hole 32.

[0122] As a possible implementation, the first metal material includes at least one of copper and aluminum. Preferably, the first metal material is copper. The metal cladding layer formed by copper has good thermal conductivity, which can quickly dissipate heat generated by the substrate layer 1, thereby improving the heat dissipation capacity of the packaging module 10.

[0123] Step S202 : Filling the cavity 211 with an opening with a magnetic material 23 . The resulting cross-sectional structure is shown in FIG10 .

[0124] As a possible implementation, the magnetic material 23 includes at least one of a magnetic fluid and / or magnetic powder. It is understood that the magnetic material 23 can be a magnetic fluid, magnetic powder, or a mixture of magnetic fluid and magnetic powder. Optionally, the magnetic powder includes materials such as iron silicon, sendust, iron silicon chromium, and sendust aluminum nickel.

[0125] Magnetic fluid is also called magnetic liquid, ferromagnetic fluid or magnetic fluid. Magnetic fluid is composed of nano-magnetic particles, base liquid and surfactant. Generally, Fe, Ni, Co etc. are commonly used as magnetic particles, with water, organic solvent, oil etc. as base liquid, and oleic acid etc. as activating agent to prevent agglomeration. Magnetic fluid has both the fluidity of liquid and the magnetism of solid magnetic material. When the liquid magnetic fluid is poured into the cavity 211, the cavity 211 can be fully filled to ensure the uniformity of the magnetic properties in the cavity 211. Moreover, the pouring process is simple and easy to implement. After pouring, the magnetic fluid still presents the state of liquid and solidifies to form a magnetic core. Such arrangement not only can make the magnetic material 23 become an integral structure, but also can fully fill the magnetic material 23 into the cavity 211, strengthening the overall structure of the inductor.

[0126] Step S203 : Using a second coating process to seal the cavity 211 with a second metal material. The resulting cross-sectional structure is shown in FIG11 .

[0127] In this step, please continue to refer to FIG. 11 , a second plating process is used to form a cover plate 212 at the opening of the cavity 211 to obtain a complete metal wrapping layer 21 .

[0128] Optionally, the second metal material includes at least one of copper and aluminum. It is understood that the first metal material and the second metal material can be the same or different, as long as the formed metal wrapping layer 21 has the property of being conductive.

[0129] Optionally, the second coating process includes at least one of electroplating and chemical vapor deposition processes. The first coating process and the second coating process may be the same or different, and those skilled in the art may adaptably select them as needed.

[0130] It is understandable that the size and thickness of the metal wrapping layer 21 and the filling amount of the magnetic material 23 of the present application can be adjusted and designed according to needs.

[0131] Optionally, when the magnetic material 23 is magnetic powder, since the magnetic powder is a powdery substance, after filling the magnetic powder, an insulating layer 24 needs to be made on the surface of the magnetic powder. The resulting cross-sectional structure diagram is shown in Figure 12, and then step S203 is performed to close the cavity to prevent leakage of the magnetic powder, wherein the material of the insulating layer includes any one of polyimide (PI), polyester, and fluorinated ethylene propylene.

[0132] Step S300 , forming a wiring layer 4 on the second surface of the substrate layer 1 .

[0133] In this step, the wiring layer 4 can be made by magnetron sputtering, electroplating process, mask process and photolithography process, and the wiring layer 4 can include at least one layer of metal wire. Exemplarily, specifically, the method for making the wiring layer 4 includes: 1) making a seed layer on one side of the second surface a' of the substrate layer 1, and the material of the seed layer is, for example, copper; 2) locally coating the seed layer with photoresist; 3) according to the shape of the wiring layer 4, performing an exposure-development process on the photoresist so that the photoresist forms an opening, the opening exposes the seed layer, and the shape of the photoresist opening is the same as the shape of the wiring layer 4; 4) electroplating copper in the opening; 5) removing the photoresist; 6) using wet etching to remove the excess seed layer to obtain a single layer of metal wire, and repeating the above steps 1) to 6) to obtain a multi-layer metal wire. It can be understood that the wiring layer 4 is a patterned structure.

[0134] As a possible implementation method, after making the wiring layer 4, the process further includes: making a second conductive bump 6, wherein the second conductive bump 6 is arranged on the side of the metal wire away from the first conductive bump 5, and the second conductive bump 6 can be made using the same or different preparation process as the first conductive bump 5. The second solder can be welded to the side of the wiring layer 4 away from the substrate layer 1 by evaporation, template printing, sputtering, and electroplating. The second solder includes a metal or alloy composed of at least one of nickel, copper, tin, and lead. It can be understood that the positions of the first conductive bump 5, the wiring layer 4, and the second conductive bump 6 correspond one-to-one, and the first conductive bump 5 is first made on the second surface of the substrate layer 1, and then the entire wiring layer 4 is made on the side of the first conductive bump 5 away from the substrate layer 1, and the entire wiring layer 4 is patterned so that the wiring layer 4 corresponds one-to-one with the first conductive bump 5. Finally, the second conductive bump 6 is made on the side of the wiring layer 4 away from the first conductive bump 5.

[0135] Step S200 and step S300 of the present application can be replaced, that is, after the substrate layer 1 is manufactured, the wiring layer 4 can be manufactured first, and then the magnetic energy storage layer 2 can be manufactured.

[0136] As a possible implementation method, after the magnetic energy storage layer 2 and the wiring layer 4 are manufactured, a third solder is used to weld the connector 22 and the metal wire at a position close to the connector 22. For example, the third solder can be melted between the connector 22 to be connected and the metal wire by heating to achieve electrical connection between the wiring layer 4 and the magnetic energy storage layer 2. The third solder can be made of the same material as the metal wire or the same material as the connector 22. Exemplarily, the third solder includes at least one of copper, aluminum and tin. The schematic diagram of the cross-sectional structure obtained by welding the connector 22 and the metal wire at a position close to the connector 22 is shown in Figure 3. It can be understood that when the magnetic material 23 is magnetic powder, the schematic diagram of the cross-sectional structure obtained is as shown in Figure 13.

[0137] Referring to FIG. 14 , the present application also provides a power module, comprising a circuit board layer 20 and a power supply 30, a power chip 40, and a packaging module 10 disposed on the circuit board layer 20. The circuit board layer 20 has a first through-hole 31 and a second through-hole 32. The power supply 30 and the packaging module 10 are electrically connected via a third through-hole 201, and the power chip 40 and the packaging module 10 are electrically connected via a fourth through-hole 202. This arrangement shortens the connection path between the packaging module 10 and the power supply 30 and the power chip 40, thereby reducing circuit losses and improving the efficiency of the power module. A second heat sink 60 is disposed on the side of the power chip 40 facing away from the circuit board layer 20, and a first heat sink 50 is disposed on the side of the packaging module 10 facing away from the circuit board layer 20. Since the packaging module 10 of the present application has a relatively small volume, the packaging module 10 occupies a relatively small volume on the circuit board layer 20, which facilitates heat dissipation from the power chip 40 upward through the second heat sink 60 and downward through the first heat sink 50, thereby achieving a bidirectional heat dissipation effect.

[0138] As a possible implementation method, the circuit board layer 20 includes a printed circuit board (PCB) or a flexible circuit board (FPC). Specifically, the circuit board layer 20 includes a substrate and circuit traces formed on the substrate using a film forming process. The substrate can be a glass substrate, a resin material substrate, an aluminum substrate, etc.

[0139] Optionally, the circuit board layer 20 includes a first surface and a second surface that are oppositely disposed. The first surface and the second surface are different. In some embodiments, the first surface and the second surface are adjacent surfaces. In other embodiments, the first surface and the second surface are opposite surfaces. In some embodiments, please continue to refer to FIG. 14 . The power supply 30 and the power chip 40 are mounted upright on the circuit board layer 20, that is, the power supply 30 and the power chip 40 are arranged on the first surface of the circuit board layer 20, and the packaging module 10 is arranged on the second surface of the circuit board layer 20. In other embodiments, the power supply 30 and the power chip 40 can also be flipped on the circuit board layer 20 and soldered to the circuit board layer 20 via conductive bump solder balls, that is, the power supply 30 and the power chip 40 are arranged on the second surface of the circuit board layer 20, and the packaging module 10 is arranged on the first surface of the circuit board layer 20. The power supply 30 and the power chip 40 are electrically connected to the packaging module 10 respectively by wire bonding.

[0140] As a possible implementation, the power supply 30 converts the bus voltage into the direct current required by the load, which can meet the requirements of different voltages in the power supply module.

[0141] As a possible implementation method, the packaging module 10 is electrically connected to the circuit board layer 20 through the second conductive bump 6. By connecting the packaging module 10 with the circuit board layer 20, the input signal can be provided to the substrate layer 1 in the packaging module 10 through the circuit board, and the output signal fed back by the substrate layer 1 can be received.

[0142] As a possible implementation method, the power chip 40 is fixed on the circuit board layer 20 through pins and is electrically connected to the circuit board layer 20. In this way, the substrate layer 1 in the packaging module 10 is electrically connected to the circuit board layer 20 through the second conductive bump 6, and the power chip 40 is electrically connected to the circuit board layer 20 through the pins to realize the transmission of physical information.

[0143] As a possible implementation method, the first heat sink 50 and the second heat sink 60 are respectively arranged on both sides of the circuit board layer 20. The heat generated by the power chip 40 can be dissipated through the second heat sink 60 adjacent to it, and the heat generated by the power chip 40 can also be dissipated through the circuit board layer 20 and the first heat sink 50, thereby improving the heat dissipation effect of the power chip 40. The heat dissipation of the substrate layer 1 in the packaging module 10 can also be dissipated through the first heat sink 50.

[0144] Optionally, the first heat sink 50 is a heat sink, and the second heat sink 60 is a heat sink. For example, they are aluminum alloy heat sinks. Aluminum alloy has good thermal conductivity, which improves the heat dissipation effect of the heat sink. In addition, the heat sink can be configured in a groove shape to increase the contact area between the heat sink and the air. Of course, the present application can also use other forms of heat sinks to dissipate heat from the power module, such as using air cooling.

[0145] As a possible implementation, please continue to refer to FIG. 14 . A third capacitor 70 is further provided on the second surface of the circuit board layer 20 . The third capacitor 70 is electrically connected to the power chip 40 by wire bonding.

[0146] The embodiment of the present application provides an electronic device 1000, which can be a common terminal such as a mobile phone, tablet, laptop computer in the prior art, including a packaging module or a power module in any of the above embodiments. Since the packaging module of the present application directly uses the substrate layer 1 and the magnetic energy storage layer 2 as the main structure, the packaging module 10 has the characteristics of miniaturization, strong heat dissipation capability and high efficiency. Therefore, the layout of the electronic device can be optimized, and the efficiency and heat dissipation performance of the electronic device can be improved. As shown in Figure 15, it is a structural schematic diagram of the packaging module 10 of the present application applied to the electronic device 1000. The electronic device 1000 includes a housing 1001 and a mainboard 1002 arranged inside the housing 1001. The packaging module 10 is fixed on the mainboard 10021 and is electrically connected to the mainboard 1002.

[0147] In this specification, reference can be made to the same or similar parts between the various embodiments. In particular, for the device embodiment and the terminal embodiment, since they are basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the description in the method embodiment.

Claims

1. A packaging module, characterized in that: include: A substrate layer, the substrate layer is made of a semiconductor material, the substrate layer has a hole structure, and the substrate layer includes a first surface and a second surface that are oppositely arranged; a wiring layer, the wiring layer being located on the second surface of the substrate layer and electrically connected to the substrate layer; A magnetic energy storage layer has an inductance function and comprises a connected metal wrapping layer and a connector, wherein the metal wrapping layer is located on the first surface of the substrate layer, and the connector is embedded in the hole structure and electrically connected to the wiring layer.

2. The packaging module according to claim 1, characterized in that: Magnetic material is arranged in the metal wrapping layer.

3. The packaging module according to claim 1 or 2, characterized in that: The metal wrapping layer and the connector are an integrally formed structure.

4. The packaging module according to any one of claims 1 to 3, characterized in that: The metal wrapping layer is a closed cavity structure.

5. The packaging module according to any one of claims 1 to 4, characterized in that: The morphology of the metal wrapping layer includes at least one of a columnar shape, a cone shape, a sphere shape and a terrace shape.

6. The packaging module according to any one of claims 1 to 5, characterized in that: The pore diameter of the pore structure is greater than or equal to 0.02 mm.

7. The packaging module according to any one of claims 1 to 6, characterized in that: The semiconductor material includes at least one of silicon, silicon dioxide, silicon nitride and silicon carbide.

8. The packaging module according to any one of claims 1 to 7, characterized in that: The material of the metal wrapping layer includes at least one of copper, gold and aluminum.

9. The packaging module according to any one of claims 1 to 8, characterized in that: The thickness of the metal wrapping layer is greater than or equal to 0.02 mm.

10. The packaging module according to any one of claims 1 to 9, characterized in that: The thickness of the substrate layer is greater than or equal to 0.05 mm.

11. The packaging module according to any one of claims 1 to 10, characterized in that: The connector includes a first sub-connector and a second sub-connector, the first sub-connector has a positive port, the second sub-connector has a negative port, the hole structure includes a first through hole and a second through hole, the first sub-connector is embedded in the first through hole and electrically connected to the wiring layer, and the second sub-connector is embedded in the second through hole and electrically connected to the wiring layer.

12. The packaging module according to any one of claims 1 to 11, characterized in that: The substrate layer has a circuit layer inside.

13. A method for manufacturing a packaging module, characterized in that: The steps include: Manufacturing a substrate layer, wherein the substrate layer is made of a semiconductor material, a hole structure is opened on the substrate layer, and the substrate layer includes a first surface and a second surface that are oppositely arranged; A magnetic energy storage layer is fabricated on the first surface of the substrate layer, wherein the magnetic energy storage layer has an inductance function and comprises a connected metal wrapping layer and a connector, wherein the metal wrapping layer is located on the first surface of the substrate layer, and the connector is embedded in the hole structure; A wiring layer is manufactured on the second surface of the substrate layer, and the wiring layer is electrically connected to the connecting body.

14. The manufacturing method according to claim 13, characterized in that: The method for making the magnetic energy storage layer comprises: Filling the hole structure with a first metal material to form a connector, and forming a cavity with an opening on the first surface of the substrate layer; Filling the cavity with magnetic material; The cavity is sealed with a second metal material.

15. The manufacturing method according to claim 14, characterized in that: The magnetic material includes magnetic fluid and / or magnetic powder.

16. A power module, characterized in that: include: A circuit board layer, wherein the circuit board layer has a third through hole and a fourth through hole; A power supply, a power chip and a packaging module are arranged on the circuit board layer, the packaging module is electrically connected to the power supply through the third through hole, and the packaging module is electrically connected to the power chip through the fourth through hole; A first heat sink, the first heat sink is arranged on a side of the power chip away from the circuit board layer; A second heat sink, the second heat sink is arranged on a side of the packaging module away from the circuit board layer; The packaging module includes the packaging module described in any one of claims 1 to 12 or the packaging module manufactured by the manufacturing method described in any one of claims 13 to 15.

17. An electronic device, characterized in that: The electronic device comprises the packaging module according to any one of claims 1 to 12, or the packaging module manufactured by the manufacturing method according to any one of claims 13 to 15, or the power supply module according to claim 16.

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