Semiconductor device

Abstract

This semiconductor device comprises a plurality of upper and lower arm circuit bodies. Each of the plurality of upper and lower arm circuits is provided with a first circuit body that is configured from a first semiconductor element sandwiched between a first conductor and a second conductor, and a second circuit body that is configured from a second semiconductor element sandwiched between a third conductor and a fourth conductor. Each of the upper and lower arm circuits is provided with: a plurality of first DC terminals that are adjacent to each other along a second direction orthogonal to a first direction, where the first direction is the direction in which the first circuit body and the second circuit body are arranged, the plurality of first DC terminals being connected to the second circuit body, extending in the first direction, and being arranged on both second-direction side surfaces of the first circuit body; and a plurality of second DC terminals that are connected to the first circuit body and are arranged between the first DC terminals. At least one of the first DC terminals has an adjacent connection portion that connects adjacent second circuit bodies to each other.

Description

Semiconductor Devices

[0001] The present invention relates to a semiconductor device.

[0002] Patent Literature 1 discloses a semiconductor device in which semiconductor elements are arranged in a Y direction with an arm connection portion between them, the P terminal and the N terminal are arranged on the same side in the Y direction, the substrate sandwiching the semiconductor elements and including the substrate, an insulating base, a front surface metal body, and a back surface metal body, the sealing body sealing the semiconductor elements and the front surface metal body, the front surface metal body having an N wiring and a relay wiring, the N wiring having a base portion arranged alongside the relay wiring in the Y direction and a pair of extension portions extending from the base portion in the Y direction so as to sandwich the relay wiring in the X direction, each extension portion having an N terminal connected to it, and in which a length L1 of an end of the relay wiring, a length L2 of an opposing side of the base, and a length L3 of an element placement region of the base satisfy a relationship of L1<L2<L3 in the X direction.

[0003] Japanese Patent Application Laid-Open No. 2022-181823

[0004] The invention described in Patent Document 1 leaves room for improvement in reducing inductance.

[0005] A semiconductor device according to a first aspect of the present invention comprises a plurality of upper and lower arm circuits, each of which comprises a first circuit body having a first semiconductor element sandwiched between a first conductor and a second conductor, and a second circuit body having a second semiconductor element sandwiched between a third conductor and a fourth conductor, an arrangement direction of the first circuit body and the second circuit body being a first direction, and each of the upper and lower arm circuits being adjacent to each other along a second direction perpendicular to the first direction, and comprising: a plurality of first DC terminals connected to the second circuit body, extending in the first direction, and arranged on both side surfaces of the first circuit body in the second direction; and a plurality of second DC terminals connected to the first circuit body and arranged between the first DC terminals, and at least one of the first DC terminals has an adjacent connecting portion connecting adjacent second circuit bodies.

[0006] According to the present invention, the inductance of the semiconductor device can be reduced.

[0007] Circuit diagram of the semiconductor device Perspective view of the semiconductor device View of the semiconductor device as seen from the negative side of the Z axis Exploded perspective view of the semiconductor device with the sealing resin removed Exploded perspective views of the first circuit body and the second circuit body External view of the semiconductor device with the sealing resin and signal terminals removed VII-VII sectional view of the first positive terminal connecting portion Explanatory diagram showing the connection of the negative terminal Explanatory diagram showing the connection of the positive terminal VII-VII sectional view of the first positive terminal connecting portion in the second embodiment Exploded perspective view of the semiconductor device in the third embodiment External view of the semiconductor device in the fourth embodiment with the sealing resin and signal terminals removed

[0008] -First Embodiment- A first embodiment of a semiconductor device will be described below with reference to FIGS.

[0009] 1 is a circuit diagram of a semiconductor device 300. The semiconductor device 300 includes a first semiconductor element 201, a second semiconductor element 202, a third semiconductor element 211, a fourth semiconductor element 212, a fifth semiconductor element 221, and a sixth semiconductor element 222.

[0010] Each of the first semiconductor element 201, the second semiconductor element 202, the third semiconductor element 211, the fourth semiconductor element 212, the fifth semiconductor element 221, and the sixth semiconductor element 222 is a field effect transistor (FET). However, each of the first semiconductor element 201, the second semiconductor element 202, the third semiconductor element 211, the fourth semiconductor element 212, the fifth semiconductor element 221, and the sixth semiconductor element 222 can also be realized by a combination of an insulated gate bipolar transistor (IGBT) and a diode instead of a FET.

[0011] The semiconductor device 300 includes an upper arm 301 shown in the upper part of the figure and a lower arm 302 shown in the lower part of the figure. The upper arm 301 is composed of a first semiconductor element 201, a third semiconductor element 211, and a fifth semiconductor element 221. The lower arm 302 is composed of a second semiconductor element 202, a fourth semiconductor element 212, and a sixth semiconductor element 222. The upper arm 301 includes a first positive terminal 101, a second positive terminal 111, and a third positive terminal 121. The upper arm 301 also includes a first signal terminal 104, a third signal terminal 114, and a fifth signal terminal 124.

[0012] The lower arm 302 includes a first negative terminal 102, a second negative terminal 112, a third negative terminal 122, and a fourth negative terminal 132. The lower arm 302 includes a second signal terminal 105, a fourth signal terminal 115, and a sixth signal terminal 125. The first positive terminal 101, the second positive terminal 111, the third positive terminal 121, the first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 are connected to a capacitor or the like to supply power from outside the semiconductor device 300.

[0013] The first signal terminal 104, the second signal terminal 105, the third signal terminal 114, the fourth signal terminal 115, the fifth signal terminal 124, and the sixth signal terminal 125 are connected to a control board and control the switching operation of the semiconductor element. The semiconductor device 300 includes a first AC terminal 103, a second AC terminal 113, and a third AC terminal 123. The semiconductor device 300 includes a first intermediate connection 106, a second intermediate connection 116, and a third intermediate connection 126. Hereinafter, the first intermediate connection 106, the second intermediate connection 116, and the third intermediate connection 126 will be collectively referred to as an "intermediate connection group" 106G. The intermediate connection group 106G electrically connects the upper arm 301 and the lower arm 302.

[0014] The first intermediate connector 106 electrically connects the first semiconductor element 201, the second semiconductor element 202, and the first AC terminal 103. The second intermediate connector 116 electrically connects the third semiconductor element 211, the fourth semiconductor element 212, and the second AC terminal 113. The third intermediate connector 126 electrically connects the fifth semiconductor element 221, the sixth semiconductor element 222, and the third AC terminal 123. The first AC terminal 103, the second AC terminal 113, and the third AC terminal 123 output current from the semiconductor device 300 to the outside, and supply power to an AC motor or the like.

[0015] The semiconductor device 300 includes, at the top as shown in the figure, a first positive electrode terminal connecting portion 107 and a second positive electrode terminal connecting portion 117. The first positive electrode terminal connecting portion 107 electrically connects the first positive electrode terminal 101 and the second positive electrode terminal 111. The second positive electrode terminal connecting portion 117 electrically connects the second positive electrode terminal 111 and the third positive electrode terminal 121. The first positive electrode terminal 101, the second positive electrode terminal 111, and the third positive electrode terminal 121 are electrically connected by the first positive electrode terminal connecting portion 107 and the second positive electrode terminal connecting portion 117.

[0016] The semiconductor device 300 includes a first negative electrode terminal connecting portion 108, a second negative electrode terminal connecting portion 118, and a third negative electrode terminal connecting portion 128 at the bottom as shown. The first negative electrode terminal connecting portion 108 electrically connects the first negative electrode terminal 102 and the second negative electrode terminal 112. The second negative electrode terminal connecting portion 118 electrically connects the second negative electrode terminal 112 and the third negative electrode terminal 122. The third negative electrode terminal connecting portion 128 electrically connects the third negative electrode terminal 122 and a fourth negative electrode terminal 132. The first negative electrode terminal 102, the second negative electrode terminal 112, the third negative electrode terminal 122, and the fourth negative electrode terminal 132 are electrically connected by the first negative electrode terminal connecting portion 108, the second negative electrode terminal connecting portion 118, and the third negative electrode terminal connecting portion 128.

[0017] The first positive terminal 101, the second positive terminal 111, and the third positive terminal 121 have parasitic inductances L1, L2, and L3, respectively. The first negative terminal 102, the second negative terminal 112, the third negative terminal 122, and the fourth negative terminal 132 have parasitic inductances L4, L5, L6, and L7, respectively. Each parasitic inductance generates a surge voltage when each semiconductor element switches. The surge voltage is proportional to the parasitic inductance and the switching speed of the semiconductor element. If the parasitic inductance is large and the surge voltage increases, the semiconductor element may be destroyed. However, slowing the switching speed to suppress the surge voltage increases losses and reduces output power. The parasitic inductances L1, L2, and L3 are connected in parallel, thereby reducing the inductance. The parasitic inductances L4, L5, L6, and L7 are connected in parallel, thereby reducing the inductance.

[0018] FIG. 2 is an external perspective view of the semiconductor device 300. Most of the semiconductor device 300 is sealed in sealing resin 600. FIG. 2 shows three mutually orthogonal axes, X, Y, and Z, to show correlation with other drawings. Note that hereinafter, the X-axis direction may be referred to as the "second direction" and the Y-axis direction as the "first direction." The sealing resin 600 is a generally flat plate that is wide in the XY plane and has a thickness in the Z-axis direction. In this figure, the surface of the semiconductor device 300 on the negative Z-axis side is hidden and cannot be seen.

[0019] Portions of the first positive electrode terminal 101, the second positive electrode terminal 111, the third positive electrode terminal 121, the first negative electrode terminal 102, the second negative electrode terminal 112, the third negative electrode terminal 122, the fourth negative electrode terminal 132, the first AC terminal 103, the second AC terminal 113, and the third AC terminal 123 are exposed from the sealing resin 600. Portions of the first signal terminal 104, the second signal terminal 105, the third signal terminal 114, the fourth signal terminal 115, the fifth signal terminal 124, and the sixth signal terminal 125 are exposed from the sealing resin 600. Note that hereinafter, the first positive electrode terminal 101, the second positive electrode terminal 111, and the third positive electrode terminal 121 may be collectively referred to as "second DC terminals." The first negative electrode terminal 102, the second negative electrode terminal 112, the third negative electrode terminal 122, and the fourth negative electrode terminal 132 may also be collectively referred to as "first DC terminals."

[0020] The semiconductor device 300 has, on the surface on the positive side of the Z axis, a first heat dissipation surface 303, a second heat dissipation surface 304, a third heat dissipation surface 305, a fourth heat dissipation surface 306, a fifth heat dissipation surface 307, and a sixth heat dissipation surface 308. The semiconductor device 300 dissipates heat generated by the semiconductor element to the outside from the first heat dissipation surface 303, the second heat dissipation surface 304, the third heat dissipation surface 305, the fourth heat dissipation surface 306, the fifth heat dissipation surface 307, and the sixth heat dissipation surface 308.

[0021] 3 is a view of semiconductor device 300 from the opposite side to FIG. 2 , i.e., from the negative side of the Z axis. That is, in this figure, the surface on the negative side of the Z axis is shown, but the surface on the positive side of the Z axis is hidden and cannot be seen. Semiconductor device 300 includes seventh heat dissipation surface 309, eighth heat dissipation surface 310, ninth heat dissipation surface 311, tenth heat dissipation surface 312, eleventh heat dissipation surface 313, and twelfth heat dissipation surface 314. Semiconductor device 300 dissipates heat generated by the semiconductor element to the outside from seventh heat dissipation surface 309, eighth heat dissipation surface 310, ninth heat dissipation surface 311, tenth heat dissipation surface 312, eleventh heat dissipation surface 313, and twelfth heat dissipation surface 314.

[0022] FIG. 4 is an exploded perspective view of the semiconductor device 300 with the sealing resin 600 removed. The perspective of FIG. 4 is the same as that of FIG. 2. The semiconductor device 300 includes a first circuit body 320, a second circuit body 321, a third circuit body 322, a fourth circuit body 323, a fifth circuit body 324, and a sixth circuit body 325. These include the first to sixth semiconductor elements 201 to 222 therein. Specifically, the first circuit body 320 includes the first semiconductor element 201 therein. The second circuit body 321 includes the second semiconductor element 202 therein. The third circuit body 322 includes the third semiconductor element 211 therein. The fourth circuit body 323 includes the fourth semiconductor element 212 therein. The fifth circuit body 324 includes the fifth semiconductor element 221 therein. The sixth circuit body 325 includes the sixth semiconductor element 222 therein.

[0023] The first circuit body 320, the third circuit body 322, and the fifth circuit body 324 form the upper arm 301. The second circuit body 321, the fourth circuit body 323, and the sixth circuit body 325 form the lower arm 302. The first circuit body 320 and the second circuit body 321 form a pair of upper and lower arms. The third circuit body 322 and the fourth circuit body 323 form a pair of upper and lower arms. The fifth circuit body 324 and the sixth circuit body 325 form a pair of upper and lower arms.

[0024] The first circuit body 320 has a first positive electrode connecting portion 326. The first positive electrode connecting portion 326 is joined to the first positive electrode terminal 101 via a first positive electrode bonding material 500. The second circuit body 321 has a first AC connecting portion 327. The first AC connecting portion 327 is joined to the first AC terminal 103 via a first AC bonding material 509. The second circuit body 321 has a first negative electrode connecting portion 360 and a second negative electrode connecting portion 361. The first negative electrode connecting portion 360 is joined to the first negative electrode terminal connecting portion 340 via a first negative electrode bonding material 503. The second negative electrode connecting portion 361 is joined to the second negative electrode terminal connecting portion 341 via a second negative electrode bonding material 504.

[0025] The third circuit body 322 has a second positive electrode connecting portion 328. The second positive electrode connecting portion 328 is joined to the second positive electrode terminal 111 via a second positive electrode bonding material 501. The fourth circuit body 323 has a second AC connecting portion 329. The second AC connecting portion 329 is joined to the second AC terminal 113 via a second AC bonding material 510. The fourth circuit body 323 has a third negative electrode connecting portion 362 and a fourth negative electrode connecting portion 363. The third negative electrode connecting portion 362 is joined to the third negative electrode terminal connecting portion 342 via a third negative electrode bonding material 505. The fourth negative electrode connecting portion 363 is joined to the fourth negative electrode terminal connecting portion 343 via a fourth negative electrode bonding material 506.

[0026] The fifth circuit body 324 has a third positive electrode connecting portion 330. The third positive electrode connecting portion 330 is joined to the third positive electrode terminal 121 via a third positive electrode bonding material 502. The sixth circuit body 325 has a third AC connecting portion 331. The third AC connecting portion 331 is joined to the third AC terminal 123 via a third AC bonding material 511. The sixth circuit body 325 has a fifth negative electrode connecting portion 364 and a sixth negative electrode connecting portion 365. The fifth negative electrode connecting portion 364 is joined to the fifth negative electrode terminal connecting portion 344 via a fifth negative electrode bonding material 507. The sixth negative electrode connecting portion 365 is joined to the sixth negative electrode terminal connecting portion 345 via a sixth negative electrode bonding material 508.

[0027] The first negative electrode terminal connection portion 340 is electrically connected to the first negative electrode plate 346. The first negative electrode plate 346 is electrically connected to the first negative electrode terminal 102. The first negative electrode terminal connection portion 340, the first negative electrode plate 346, and the first negative electrode terminal 102 are formed as an integrated part. The second negative electrode terminal connection portion 341 and the third negative electrode terminal connection portion 342 are electrically connected to the second negative electrode plate 347. The second negative electrode plate 347 is electrically connected to the second negative electrode terminal 112. The second negative electrode terminal connection portion 341, the third negative electrode terminal connection portion 342, the second negative electrode plate 347, and the second negative electrode terminal 112 are formed as an integrated part. The fourth negative electrode terminal connection portion 343 and the fifth negative electrode terminal connection portion 344 are electrically connected to the third negative electrode plate 348.

[0028] The third negative electrode plate 348 is electrically connected to the third negative electrode terminal 122. The fourth negative electrode terminal connection portion 343, the fifth negative electrode terminal connection portion 344, the third negative electrode plate 348, and the third negative electrode terminal 122 are formed as an integrated component. The sixth negative electrode terminal connection portion 345 is electrically connected to the fourth negative electrode plate 349. The fourth negative electrode plate 349 is electrically connected to the fourth negative electrode terminal 132. The sixth negative electrode terminal connection portion 345, the fourth negative electrode plate 349, and the fourth negative electrode terminal 132 are formed as an integrated component. The above-mentioned bonding material, such as the first positive electrode bonding material 500, is, for example, solder. However, the bonding material is not limited to solder, and a conductive adhesive or a sintered material may also be used. As described above, by forming the positive electrode terminal, negative electrode terminal, AC terminal, and circuit body from separate members, the individual components become smaller, making it easier to improve the dimensional accuracy of the components.

[0029] FIG. 5 is an exploded perspective view of the first circuit body 320 and the second circuit body 321. FIG. 5 is also from the same perspective as FIGS. 2 and 4 . The first semiconductor element 201, shown approximately in the center of the figure, has its negative Z-axis surface bonded to the first conductor plate 350 via a first semiconductor element bonding material 512. The other surface of the first semiconductor element 201, i.e., its positive Z-axis surface, is bonded to the second conductor plate 351 via a second semiconductor element bonding material 513. The first semiconductor element 201 is cooled from both sides via the first conductor plate 350 and the second conductor plate 351. The first semiconductor element 201 has a first signal pad 230. The first signal pad 230 is connected to the first signal terminal 104 via a first signal bonding material 517.

[0030] The second semiconductor element 202 has a surface on the positive side of the Z axis bonded to the third conductor plate 352 via a third semiconductor element bonding material 514. The other surface of the second semiconductor element 202, i.e., the surface on the negative side of the Z axis, bonded to the fourth conductor plate 353 via a fourth semiconductor element bonding material 515. The second semiconductor element 202 is cooled from both sides via the third conductor plate 352 and the fourth conductor plate 353. The second semiconductor element 202 has a second signal pad 231. The second signal pad 231 is connected to the second signal terminal 105 via a second signal bonding material 518.

[0031] The second conductor plate 351 has an intermediate connecting terminal 354. The intermediate connecting terminal 354 is joined to the third conductor plate 352 via an intermediate bonding material 516. The first conductor plate 350 has a positive electrode connecting terminal 355. Because the positive electrode connecting terminals 355 are located on the right and left sides of the figure, they are conveniently referred to as the left positive electrode connecting terminal 355L and the right positive electrode connecting terminal 355R to distinguish them from each other. The intermediate connecting terminal 354 is the first intermediate connector 106. The third circuit body 322 and the fifth circuit body 324 have the same configuration as the first circuit body 320. The fourth circuit body 323 and the sixth circuit body 325 have the same configuration as the second circuit body 321.

[0032] FIG. 6 is an external view of the semiconductor device 300, excluding the sealing resin 600 and the signal terminals. In FIG. 6, the right side of the figure is the positive side of the X-axis, the top of the figure is the positive side of the Y-axis, and the front of the figure is the positive side of the Z-axis. The upward and downward arrows shown near the center of FIG. 6 indicate the direction of current flow. The first circuit body 320 is arranged so as to be sandwiched between the first negative electrode plate 346 and the second negative electrode plate 347 on both sides in the X-axis direction. The first circuit body 320 is arranged so that the current flowing through the first circuit body 320 faces the direction of the current flowing through the first negative electrode plate 346 and the second negative electrode plate 347, thereby reducing inductance.

[0033] The third circuit body 322 is disposed so as to be sandwiched between the second negative electrode plate 347 and the third negative electrode plate 348 on both sides in the X-axis direction. The third circuit body 322 is disposed so as to face the direction of the current flowing through the second negative electrode plate 347 and the third negative electrode plate 348, thereby reducing inductance. The fifth circuit body 324 is disposed so as to be sandwiched between the third negative electrode plate 348 and the fourth negative electrode plate 349 on both sides in the X-axis direction. The fifth circuit body 324 is disposed so as to face the direction of the current flowing through the third negative electrode plate 348 and the fourth negative electrode plate 349, thereby reducing inductance.

[0034] The first intermediate connector 106 is arranged so as to be sandwiched between the first negative electrode connector 360 and the second negative electrode connector 361 on both sides in the X-axis direction. The first intermediate connector 106 is arranged so that the direction of the current flowing through the first negative electrode connector 360 and the second negative electrode connector 361 is opposite to the direction of the current flowing through the first negative electrode connector 360 and the second negative electrode connector 361, thereby reducing inductance.

[0035] The second intermediate connector 116 is disposed so as to be sandwiched between the third negative electrode connector 362 and the fourth negative electrode connector 363 from both sides in the X-axis direction. The second intermediate connector 116 is disposed so that the direction of the current flowing through the second intermediate connector 116 is opposite to the direction of the current flowing through the third negative electrode connector 362 and the fourth negative electrode connector 363, thereby reducing inductance.

[0036] The third intermediate connector 126 is arranged so as to be sandwiched between the fifth negative electrode connector 364 and the sixth negative electrode connector 365 on both sides in the X-axis direction. The third intermediate connector 126 is arranged so that the direction of the current flowing through the third intermediate connector 126 is opposite to the direction of the current flowing through the fifth negative electrode connector 364 and the sixth negative electrode connector 365, thereby reducing inductance.

[0037] The first negative electrode terminal connector 108 is formed by a first negative electrode connector 360, a second negative electrode connector 361, and a second circuit body 321. The second negative electrode terminal connector 118 is formed by a third negative electrode connector 362, a fourth negative electrode connector 363, and a fourth circuit body 323. The third negative electrode terminal connector 128 is formed by a fifth negative electrode connector 364, a sixth negative electrode connector 365, and a sixth circuit body 325.

[0038] The right positive electrode connecting terminal 355R of the first circuit body 320 is electrically connected to the left positive electrode connecting terminal 355L of the third circuit body 322. The right positive electrode connecting terminal 355R of the first circuit body 320 and the left positive electrode connecting terminal 355L of the third circuit body 322 form a first positive electrode terminal connecting part 107. The right positive electrode connecting terminal 355R of the third circuit body 322 is electrically connected to the left positive electrode connecting terminal 355L of the fifth circuit body 324. The right positive electrode connecting terminal 355R of the third circuit body 322 and the left positive electrode connecting terminal 355L of the fifth circuit body 324 form a second positive electrode terminal connecting part 117.

[0039] 7 is a cross-sectional view taken along line VII-VII of the first positive terminal connector 107. In this figure, the right side of the figure is the positive side of the X axis, the rear side of the figure is the positive side of the Y axis, and the top of the figure is the positive side of the Z axis. The positive connecting terminal 355 of the first circuit body 320 and the positive connecting terminal 355 of the third circuit body 322 are arranged so that their side surfaces butt against each other. The right positive connecting terminal 355R of the first circuit body 320 and the left positive connecting terminal 355L of the third circuit body 322 are joined at the positive connecting part 520.

[0040] The left positive electrode connecting terminal 355L and the right positive electrode connecting terminal 355R each have a recess 370. The recess 370 is joined at the positive electrode connecting portion 520. By arranging the right positive electrode connecting terminal 355R and the left positive electrode connecting terminal 355L, each having the recess 370, so that they butt against each other, the height of the positive electrode connecting portion 520 is reduced, allowing for space-saving joining. The second positive electrode terminal connecting portion 117 has a structure similar to that of the first positive electrode terminal connecting portion 107. A predetermined spatial distance is ensured between the second negative electrode plate 347 shown in the upper part of FIG. 7 and the first and third circuit bodies 320 and 322 for insulation.

[0041] The connection of the positive and negative terminals in the first embodiment will be described again with reference to Figures 8 and 9. However, Figures 8 and 9 are primarily intended to explain the connections between components, and do not accurately depict the positional relationships. Therefore, X, Y, and Z axes are intentionally not depicted in Figures 8 and 9.

[0042] FIG. 8 is an explanatory diagram showing the connection of the negative electrode terminals. The upper part of FIG. 8 shows four negative electrode terminals: the first negative electrode terminal 102, the second negative electrode terminal 112, the third negative electrode terminal 122, and the fourth negative electrode terminal 132. The first negative electrode terminal 102 to the fourth negative electrode terminal 132 are connected to the first negative electrode terminal 102 to the fourth negative electrode terminal 132, respectively. Of these, the second negative electrode plate 347 and the third negative electrode plate 348 are substantially T-shaped and each have two negative electrode terminal connection portions. That is, the second negative electrode plate 347 has a second negative electrode terminal connection portion 341 and a third negative electrode terminal connection portion 342, and the third negative electrode plate 348 has a fourth negative electrode terminal connection portion 343 and a fifth negative electrode terminal connection portion 344.

[0043] The three dashed circles shown at the bottom of Fig. 8 represent the second circuit body 321, the fourth circuit body 323, and the sixth circuit body 325. As described above, these three circuit bodies are all the lower arm 302. The second circuit body 321 has a first negative electrode connection portion 360 and a second negative electrode connection portion 361. The fourth circuit body 323 has a third negative electrode connection portion 362 and a fourth negative electrode connection portion 363. The sixth circuit body 325 has a fifth negative electrode connection portion 364 and a sixth negative electrode connection portion 365.

[0044] The second negative electrode connection portion 361 of the second circuit body 321 and the third negative electrode connection portion 362 of the fourth circuit body 323 are both connected to the second negative electrode plate 347. The third negative electrode connection portion 362 of the fourth circuit body 323 and the fourth negative electrode connection portion 363 of the sixth circuit body 325 are both connected to the third negative electrode plate 348. Hereinafter, the second negative electrode plate 347 and the third negative electrode plate 348 are also referred to as "adjacent connection portions" 347G because they connect to two adjacent circuits. In addition, the first negative electrode plate 346 to the fourth negative electrode plate 349 are also collectively referred to as the "negative electrode current path" 346G. The negative electrode terminal connection portion includes the adjacent connection portion 347G.

[0045] Fig. 9 is an explanatory diagram showing the connection of the positive electrode terminals. The upper part of Fig. 9 shows three positive electrode terminals, namely, the first positive electrode terminal 101, the second positive electrode terminal 111, and the third positive electrode terminal 121. The lower part of Fig. 9 shows the first conductor plates 350 of the first circuit body 320, the third circuit body 322, and the fifth circuit body 324. Adjacent first conductor plates 350 are in contact with each other at the right positive electrode connecting terminal 355R and the left positive electrode connecting terminal 355L.

[0046] The first embodiment described above provides the following advantageous effects. (1) The semiconductor device 300 includes a plurality of upper and lower arm circuits. Each of the upper and lower arm circuits includes a first circuit body 320 configured by sandwiching the first semiconductor element 201 between a first conductor plate 350 and a second conductor plate 351 in the Z direction, and a second circuit body 321 configured by sandwiching the second semiconductor element 202 between a third conductor plate 352 and a fourth conductor plate 353 in the Z direction. The first circuit body 320 and the second circuit body 321 are arranged in the Y-axis direction. The upper and lower arm circuits are adjacent to each other along the X-axis direction, which is perpendicular to the Y-axis direction. The semiconductor device 300 includes a plurality of negative terminals connected to the second circuit body 321, extending in the Y-axis direction, and disposed on both side surfaces of the first circuit body 320 in the second direction, and a plurality of positive DC terminals connected to the first circuit body 320 and disposed between the negative terminals. The second negative electrode terminal 112 and the third negative electrode terminal 122 have adjacent connection portions 347G that connect adjacent second circuit bodies, i.e., second negative electrode plates 347 and third negative electrode plates 348. This reduces the inductance of the current path flowing through the negative electrode terminals. Furthermore, arranging the first circuit body 320 and the second circuit body 321 in the Y direction allows for miniaturization in the X axis direction.

[0047] (2) The semiconductor device 300 includes the first intermediate connection portion 106, the second intermediate connection portion 116, and the third intermediate connection portion 126 that connect the second conductor plate 351 and the third conductor plate 352, and the negative terminal connection portion where the fourth conductor plate 353 is connected to the negative terminal, i.e., the first negative electrode plate 346 to the fourth negative electrode plate 349. Each intermediate connection portion is sandwiched between negative electrode current paths 346G on both sides in the X-axis direction. Therefore, as shown by the arrows in FIG. 6 , the current flowing through the intermediate connection portion group 106G is oriented in the opposite direction to the current flowing through the negative electrode current path 346G, and sandwiching the intermediate connection portions further reduces inductance.

[0048] (3) The negative and positive terminals are formed as separate members from the upper and lower arm circuits. The negative and positive terminals are joined to the upper and lower arm circuits via a joining material. Therefore, by forming each of them as separate members, the individual components become smaller, making it easier to improve the dimensional accuracy of the components.

[0049] (4) As shown in Figure 7, the positive terminals are connected to each other. Therefore, the positive terminals are connected in parallel, and the number of paths for the current flowing through the positive terminals increases, thereby reducing inductance.

[0050] (5) As shown in Figure 7, each of the first conductor plates 350 has a right-side positive electrode connecting terminal 355R and a left-side positive electrode connecting terminal 355L. The positive electrode terminals are connected to each other by the right-side positive electrode connecting terminal 355R and the left-side positive electrode connecting terminal 355L. Therefore, by connecting the first conductor plates 350 that contact the circuit body to each other, inductance is further reduced.

[0051] (Variation 1) In the configuration of the first embodiment, the positions of the positive and negative terminals may be interchanged. However, if the positions of the positive and negative terminals are interchanged, the space available for arranging the signal terminals is limited, and the terminal width must be reduced. In contrast, the configuration of this embodiment makes it possible to secure space for increasing the number of terminals.

[0052] (Modification 2) In the first embodiment, the negative and positive terminals are formed as separate members from the upper and lower arm circuits, but the negative and positive terminals may be formed integrally with the upper and lower arm circuits.

[0053] (Variation 3) In the first embodiment, the positive electrode terminals are connected to each other. However, the positive electrode terminals do not have to be connected to each other. Even when the positive electrode terminals are connected to each other, a connecting jig or the like separately provided outside the sealing resin 600, other than the first conductor plate 350, may be used.

[0054] (Variation 4) In the first embodiment, the semiconductor device 300 includes three pairs of upper and lower arms. However, the semiconductor device 300 only needs to include at least two pairs of upper and lower arms. The more pairs of upper and lower arms there are, the more current paths there can be, and therefore the greater the inductance reduction effect. Note that if the number of pairs of upper and lower arms included in the semiconductor device 300 is not a multiple of three, three semiconductor devices 300 may be used as a set.

[0055] - Second embodiment - A second embodiment of a semiconductor device will be described with reference to Figure 10. In the following description, the same components as those in the first embodiment are designated by the same reference numerals, and differences will be mainly described. Points that are not particularly described are the same as those in the first embodiment. In this embodiment, the shape of the positive electrode terminal connecting portion is mainly different from that of the first embodiment.

[0056] 10 is a cross-sectional view taken along line VII-VII of the first positive terminal connecting portion 107 in the second embodiment. In the first embodiment, the right-side positive connecting terminal 355R and the left-side positive connecting terminal 355L are joined by the positive connecting portion 520, but in this modification, a positive connecting plate 371A and a positive connecting portion bonding material 520A are used instead of the positive connecting portion 520. The right-side positive connecting terminal 355R and the left-side positive connecting terminal 355L in this modification do not have the recessed portion 370.

[0057] The positive electrode connecting plate 371A and the positive electrode connecting portion bonding material 520A are arranged on the positive side of the right positive electrode connecting terminal 355R and the left positive electrode connecting terminal 355L along the Z axis, so as to straddle both the right positive electrode connecting terminal 355R and the left positive electrode connecting terminal 355L. By joining to the positive electrode connecting plate 371A, the bonding area can be made larger than in the first embodiment, and the inductance and electrical resistance of the joint can be reduced, thereby reducing loss due to heat generation at the terminals.

[0058] -Third Embodiment- A third embodiment of a semiconductor device will be described with reference to Figure 11. In the following description, the same components as those in the first embodiment are designated by the same reference numerals, and differences will be mainly described. Points that are not particularly described are the same as those in the first embodiment. This embodiment differs from the first embodiment mainly in that a plurality of conductor plates are integrally molded in advance.

[0059] FIG. 11 is an exploded perspective view of a semiconductor device 300B according to the third embodiment. The perspective of this figure is the same as that of FIG. 4 according to the first embodiment. A first conductor plate 350B shown in the lower right of the figure is bonded to the first semiconductor element 201, the third semiconductor element 211, and the fifth semiconductor element 221 via bonding materials. The first conductor plate 350B is formed from a single member. A fourth conductor plate 353B shown in the upper left of the figure is bonded to the second semiconductor element 202, the fourth semiconductor element 212, and the sixth semiconductor element 222 via bonding materials. This fourth conductor plate 353B is formed from a single member.

[0060] According to the third embodiment described above, since no connecting member is required, productivity can be improved. In addition, since the heat dissipation area can be increased, heat dissipation performance can be improved. Furthermore, since the current path is increased, the inductance reduction effect can be improved.

[0061] Fourth Embodiment A fourth embodiment of a semiconductor device will be described with reference to Figure 12. In the following description, the same components as those in the first embodiment are designated by the same reference numerals, and differences will be mainly described. Points that are not particularly described are the same as those in the first embodiment. This embodiment differs from the first embodiment mainly in that the positions of the positive and negative terminals are interchanged.

[0062] FIG. 12 is an external view of a semiconductor device 300C according to the fourth embodiment, with the sealing resin 600 and signal terminals removed. This view corresponds to FIG. 6 for the first embodiment. The semiconductor device 300C includes a first positive terminal 101C, a second positive terminal 111C, a third positive terminal 121C, a fourth positive terminal 131C, a first negative terminal 102C, a second negative terminal 112C, and a third negative terminal 122C. The first positive terminal 101C is connected to the first circuit body 320C. The second positive terminal 111C is connected to the first circuit body 320C and the third circuit body 322C. The third positive terminal 121C is connected to the third circuit body 322C and the fifth circuit body 324C. The fourth positive terminal 131C is connected to the fifth circuit body 324C.

[0063] The first negative electrode terminal 102C is connected to the second circuit body 321C. The second negative electrode terminal 112C is connected to the fourth circuit body 323C. The third negative electrode terminal 122C is connected to the sixth circuit body 325C. The second circuit body 321C is disposed so as to be sandwiched between the first positive electrode terminal 101C and the second positive electrode terminal 111C. The third circuit body 332C is disposed so as to be sandwiched between the second positive electrode terminal 111C and the third positive electrode terminal 121C. The fifth circuit body 324C is disposed so as to be sandwiched between the third positive electrode terminal 121C and the fourth positive electrode terminal 131C. The other structures are similar to those of the first embodiment.

[0064] The above-described embodiments and modifications may be combined with each other. Although various embodiments and modifications have been described above, the present invention is not limited to these. Other embodiments conceivable within the scope of the technical concept of the present invention are also included within the scope of the present invention.

[0065] 101: First positive electrode terminal 102: First negative electrode terminal 106: First intermediate connection portion 106G: Intermediate connection portion group 107: First positive electrode terminal connecting portion 108: First negative electrode terminal connecting portion 111: Second positive electrode terminal 112: Second negative electrode terminal 116: Second intermediate connection portion 117: Second positive electrode terminal connecting portion 118: Second negative electrode terminal connecting portion 121: Third positive electrode terminal 122: Third negative electrode terminal 126: Third intermediate connection portion 128: Third negative electrode terminal connecting portion 131: Fourth positive electrode terminal 132: Fourth negative electrode terminal 300: Semiconductor device 301: Upper arm 302: Lower arm 320: First circuit body 321: Second circuit body 322 : Third circuit body 323 : Fourth circuit body 324 : Fifth circuit body 325 : Sixth circuit body 340 : First negative electrode terminal connection portion 341 : Second negative electrode terminal connection portion 342 : Third negative electrode terminal connection portion 343 : Fourth negative electrode terminal connection portion 344 : Fifth negative electrode terminal connection portion 345 : Sixth negative electrode terminal connection portion 346 : First negative electrode plate 346G : Negative electrode terminal connection portion 347 : Second negative electrode plate 347G : Adjacent connection portion 348 : Third negative electrode plate 349 : Fourth negative electrode plate 350 : First conductor plate 351 : Second conductor plate 352 : Third conductor plate 353 : Fourth conductor plate 354 : Intermediate connection terminal 355 : Positive electrode linking terminal 355L : Left side positive connection terminal 355R : Right side positive connection terminal

Claims

1. A semiconductor device comprising a plurality of upper and lower arm circuit bodies, each of the plurality of upper and lower arm circuits including a first circuit body formed by sandwiching a first semiconductor element between a first conductor and a second conductor, and a second circuit body formed by sandwiching a second semiconductor element between a third conductor and a fourth conductor. The arrangement direction of the first circuit body and the second circuit body is a first direction, and each of the plurality of upper and lower arm circuits is adjacent along a second direction orthogonal to the first direction. The semiconductor device further includes a plurality of first DC terminals connected to the second circuit body, extending in the first direction, and disposed on both side surfaces of the first circuit body in the second direction, and a plurality of second DC terminals connected to the first circuit body and disposed between the first DC terminals, wherein at least one of the first DC terminals has an adjacent connection portion connecting adjacent second circuit bodies.

2. The semiconductor device according to claim 1, wherein the second circuit body is a lower arm circuit, and the first DC terminal is a negative terminal.

3. The semiconductor device according to claim 2, further comprising an intermediate connection portion connecting the second conductor and the third conductor, and a negative current path in which the fourth conductor is connected to the first DC terminal, wherein the intermediate connection portion is sandwiched between the negative terminal connection portions from both sides in the second direction.

4. The semiconductor device according to claim 1, wherein the first DC terminal and the second DC terminal are formed of separate members from the upper and lower arm circuit bodies, and each of the first DC terminal and the upper and lower arm circuit body, and the second DC terminal and the upper and lower arm circuit body are joined via a joining material.

5. The semiconductor device according to claim 2, wherein the second DC terminals are connected to each other.

6. The semiconductor device according to claim 1, wherein each of the first conductors has a positive connection terminal, and the second DC terminals are connected to each other by the positive connection terminals.

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