Electron beam direct writing device and electron beam direct writing method

Abstract

An electron beam direct writing device (100) and an electron beam direct writing method. The electron beam direct writing device (100) comprises: an electron source (1), which comprises a plurality of electron source modules, wherein at least one electron source module comprises a plurality of electron source units, and each electron source unit generates a corresponding electron beam; and a controller (3), which controls the electron source (1) to generate at least one electron beam. The plurality of electron source units of the at least one electron source module comprise at least one first electron source unit and at least one second electron source unit, an electron beam generated by each first electron source unit corresponds to an electron beam having a first beam spot, an electron beam generated by each second electron source unit corresponds to an electron beam having a second beam spot, and the area of the first beam spot is at least twice the area of the second beam spot. By means of the solution, the precision of electron beam direct writing is ensured, and the speed of electron beam direct writing can also be increased.

Description

Electron beam direct writing device and electron beam direct writing method Technical Field

[0001] The present application relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to an electron beam direct writing device and an electron beam direct writing method. Background Art

[0002] The development of the semiconductor microfabrication industry is placing increasing demands on electron beam direct writing technology. These requirements include ensuring the accuracy of fine pattern imaging and significantly increasing direct writing speeds. To meet these industry demands, multi-electron beam direct writing technology is rapidly developing and playing an irreplaceable role in the direct writing of fine patterns in the integrated circuit manufacturing process.

[0003] Specifically, in semiconductor manufacturing, the imaging of high-tech node graphics (for example, the graphics of photomasks and the structural graphics of each layer of the device) requires not only finer and more accurate direct writing, but also high-speed direct writing when the amount of graphic data increases dramatically. From the perspective of accurate direct writing of fine graphics, the electron beam spot needs to be made smaller to facilitate precise scanning. When the current density remains unchanged, making the electron beam spot smaller means making the current of the electron beam smaller, which results in a longer direct writing time. On the other hand, when the size of the graphics to be directly written is below tens of nanometers, the smaller the line width, the more significant the impact of shot noise, which seriously affects the uniformity of the critical dimension and the roughness of the line edge.

[0004] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art.

[0005] Summary of the Invention

[0006] To ensure that the critical line width uniformity and line edge roughness of small line width patterns meet product performance requirements, smaller line widths require a less sensitive electron beam photoresist during direct writing. As a result, smaller line width patterns require a greater direct writing exposure. This means that, for a constant current density, smaller line widths require longer direct writing times. Increasing the current density is an effective way to improve the throughput of electron beam direct writing equipment per unit time.

[0007] However, the electron source of a typical multi-electron beam direct writing device consists of only a single electron source unit. A single source electron beam emitted from this single electron source unit is split into multiple (for example, sometimes exceeding 100,000) direct writing electron beams. To increase the current density of the direct writing electron beam, the total current of the source electron beams must be increased. However, increasing the total current of the source electron beams is difficult, and the increase in the current density of each direct writing electron beam is very limited.

[0008] The inventors of this application discovered that in a semiconductor device, not every level of structural graphics is very fine. For example, some levels of structural graphics are fine graphics that require fine direct writing, while some levels of structural graphics are relatively non-fine graphics that do not require the finest conditions for direct writing. In addition, even within the structural graphics of the same level, there are fine graphics and non-fine graphics. For graphics with a relatively large area or low requirements for the uniformity of the line width and the roughness of the line edges, if a larger electron beam spot and a larger current density can be used for direct writing, the direct writing time will be greatly shortened. However, general electron beam direct writing equipment cannot easily achieve a large-scale switching of the electron beam spot and current density while maintaining direct writing accuracy.

[0009] In order to solve the above problems or at least similar problems, an embodiment of the present application provides an electron beam direct writing device and an electron beam direct writing method. The electron beam direct writing device uses different electron source units to generate electron beams with beam spots of different areas, thereby ensuring the fineness of electron beam direct writing and improving the speed of electron beam direct writing.

[0010] The present invention provides an electron beam direct writing device, which includes:

[0011] An electron source (1), comprising a plurality of electron source modules (1-k), at least one of the electron source modules (1-k) comprising a plurality of electron source units (1-kh), each of the electron source units generating a corresponding electron beam; and

[0012] a controller (3) for controlling the electron source to generate at least one electron beam,

[0013] wherein the plurality of electron source units of at least one of the electron source modules (1-k) include at least one first electron source unit and at least one second electron source unit,

[0014] The electron beam generated by each of the first electron source units corresponds to an electron beam having a first beam spot,

[0015] The electron beam generated by each of the second electron source units corresponds to an electron beam having a second beam spot,

[0016] The area of ​​the first beam spot is more than twice the area of ​​the second beam spot.

[0017] In another embodiment, the electron source unit comprises:

[0018] an electron emitting structure for generating an electron beam;

[0019] A dedicated circuit unit controls the time when the electron emission structure generates the electron beam and the current density of the electron beam based on the instruction of the controller.

[0020] In another embodiment, the current density of the electron beam having the first beam spot is greater than or equal to the current density of the electron beam having the second beam spot.

[0021] In another embodiment, the electron beam direct writing device further comprises:

[0022] An electron beam shaping mechanism shapes the electron beam generated by the electron source unit to form the electron beam having the first beam spot and the electron beam having the second beam spot.

[0023] In another embodiment, the electron beam direct writing device further comprises:

[0024] A workpiece stage (7) is used for carrying a substrate (8), and the workpiece stage moves under the control of the controller.

[0025] In another embodiment, the controller processes the received graphic data to divide the graphic into two or more sub-regions, and allocates at least one electron source module to each sub-region; and

[0026] dividing at least one of the sub-areas into a first pattern and a second pattern, allocating the first electron source unit in the electron source module to the first pattern, and allocating the second electron source unit in the electron source module to the second pattern,

[0027] The line width of the first graphic is greater than the line width of the second graphic.

[0028] In another embodiment, the controller controls the first electron source unit and the second electron source unit to generate electron beams simultaneously to form the first pattern and the second pattern.

[0029] In another embodiment, an electron beam direct writing method is provided, wherein the electron beam direct writing is performed using the electron beam direct writing device described in any one of the above embodiments, and the method comprises:

[0030] The controller processes the received graphic data to divide the graphic into two or more sub-areas and allocates at least one of the electron source modules to each sub-area; and

[0031] dividing at least one of the sub-areas into a first pattern and a second pattern, allocating the first electron source unit in the electron source module to the first pattern, and allocating the second electron source unit in the electron source module to the second pattern,

[0032] The line width of the first graphic is greater than the line width of the second graphic.

[0033] In another embodiment, the method further comprises:

[0034] The controller controls the first electron source unit and the second electron source unit to generate electron beams for electron beam direct writing to form the first pattern and the second pattern.

[0035] In another embodiment, the controller controls the first electron source unit and the second electron source unit to generate the electron beam simultaneously.

[0036] The beneficial effect of the present application is that the electron beam direct writing device uses different electron source units to generate electron beams with beam spots of different areas, thereby ensuring the fineness of the electron beam direct writing and improving the speed of the electron beam direct writing.

[0037] With reference to the following description and accompanying drawings, specific embodiments of the present application are disclosed in detail, indicating the manner in which the principles of the present application can be employed. It should be understood that the embodiments of the present application are not limited in scope. Within the spirit and scope of the appended claims, the embodiments of the present application include many variations, modifications and equivalents.

[0038] Features described and / or illustrated with respect to one embodiment may be used in the same or similar manner in one or more other embodiments, combined with features in other embodiments, or substituted for features in other embodiments.

[0039] It should be emphasized that the term "include / comprising" when used herein refers to the presence of features, integers, steps or components, but does not exclude the presence or addition of one or more other features, integers, steps or components. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The included drawings are used to provide a further understanding of the embodiments of the present application, which constitute a part of the specification, are used to illustrate the implementation methods of the present application, and together with the text description, explain the principles of the present application. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without inventive work. In the drawings:

[0041] FIG1 is a schematic diagram of an electron source of an electron beam direct writing device of the present application;

[0042] FIG2 is a schematic diagram of an electron source module 1 - k;

[0043] FIG3 is a schematic diagram of the composition of the electron beam direct writing device of the present application;

[0044] FIG4 is a schematic diagram of an electron beam direct writing method according to an embodiment of the present application;

[0045] FIG5 is a schematic diagram showing the composition of an electron source module of the electron source 1 . DETAILED DESCRIPTION

[0046] The above and other features of the present application will become apparent through the following description with reference to the accompanying drawings. In the description and the accompanying drawings, specific embodiments of the present application are disclosed in detail, which illustrate some embodiments in which the principles of the present application can be adopted. It should be understood that the present application is not limited to the described embodiments. On the contrary, the present application includes all modifications, variations and equivalents that fall within the scope of the appended claims.

[0047] Example 1

[0048] Embodiment 1 of the present application provides an electron beam direct writing device.

[0049] Figure 1 is a schematic diagram of the electron source of the electron beam direct writing device of the present application. As shown in Figure 1, the electron beam direct writing device of the present application includes an electron source 1, which includes a plurality of independent electron source modules 1-k (1≤k≤n; n≥2; k and n are both positive integers).

[0050] Figure 2 is a schematic diagram of an electron source module 1-k. As shown in Figure 2, at least one electron source module 1-k of the present application includes a plurality of independent electron source units 1-kh (1≤h≤m; m≥2; h and m are both positive integers). The number of electron source units included in each electron source module can be the same or different.

[0051] Figure 3 is a schematic diagram of the components of the electron beam direct writing device of the present application. As shown in Figure 3, the electron beam direct writing device of the present invention includes the electron source 1 and controller 3 shown in Figure 1. For simplicity, the electron source 1 in Figure 3 only shows the kth electron source module 1-k of the electron source 1. Each independent electron source unit 1-kh in the electron source module 1-k can generate an initial electron beam 2-k-ha, which can generate an incident electron beam 2-k-hb.

[0052] As shown in FIG3 , each electron source unit 1-kh may include an electron emission structure 4-kh for generating an initial electron beam 2-k-ha. The electron source unit 1-kh may also include a dedicated circuit unit 5-kh that controls the timing and current density of the electron emission structure 4-kh generating the electron beam 2-k-ha according to instructions from the controller 3.

[0053] The electron beam 2-k-ha is the initial electron beam generated by the electron source unit 1-kh, and the electron beam 2-k-hb is the incident electron beam formed after the initial electron beam 2-k-ha is shaped by the corresponding electron beam shaping mechanism 6-kh. The shaping mechanism 6-kh may include at least one of an electron beam anode, a collimating lens, a deflector, and a focusing lens (not shown in the figure); in addition, the shaping mechanism 6-kh may also include other components. The incident electron beam 2-k-hb can perform direct write exposure on the electron beam photoresist 9 on the substrate 8. The substrate 8 is fixed on the workpiece stage 7, and the workpiece stage 7 can move horizontally under the control of the controller 3.

[0054] In at least one electron source module 1-k, at least one electron source unit (e.g., 1-ki, 1≤i≤m; i is a positive integer) is a large-spot electron source unit (i.e., a first electron source unit), which can be used to form a large-spot electron beam (i.e., an electron beam having a first beam spot); at least one electron source unit 1-kj (1≤j≤m, j≠i; j is a positive integer) is a small-spot electron source unit (i.e., a second electron source unit), which can form a small-spot electron beam (i.e., an electron beam having a second beam spot); the beam spot area of ​​the large-spot electron beam is more than twice the beam spot area of ​​the small-spot electron beam. In addition, the current density of the large-spot electron beam can be substantially the same as the current density of the small-spot electron beam; or, the current density of the large-spot electron beam is greater than the current density of the small-spot electron beam, for example, the current density of the large-spot electron beam is more than twice the current density of the small-spot electron beam.

[0055] The beam spot of the electron beam mentioned in this application refers to the projection shape of the electron beam on the surface of the electron beam photoresist 9 on the substrate 8 after the electron beam passes through the electron beam shaping mechanism and is irradiated on the surface of the electron beam photoresist 9.

[0056] In some examples, the number of electron source modules in the electron source 1 is n=1000; the number of electron source units contained in each electron source module is the same (for example, m=200) or different; in each electron source module, one electron source unit is a large beam spot electron source unit, and the remaining 199 electron source units are small beam spot electron source units. In addition, the number of large beam spot electron source units and small beam spot electron source units can also be other numbers, for example, the number of large beam spot electron source units is greater than, equal to, or less than the number of small beam spot electron source units; in each electron source module, the electron source units are arranged in an array, wherein the large beam spot electron source units can be evenly distributed in the array, or the large beam spot electron source units can be unevenly distributed, for example, the large beam spot electron source units can be concentrated at the center position or other positions of the array.

[0057] In the present application, the electron emission structure 4-kh can be a nanocrystalline silicon field emission electron source, as described in reference 1 (reference 1: Japanese Journal of Applied Physics 61, SD0807 (2022), https: / / doi.org / 10.35848 / 1347-4065 / ac4cel). The electron emission structure of reference 1 is suitable for a large-scale array multi-beam electron emission source because the current of each electron emission structure can be precisely controlled, which is more suitable for the formation of a small beam electron beam; alternatively, the electron emission structure 4-kh can also be a silicon field emission electron source, as described in reference 2 (reference 2: IEEE Electron Device Letters, VOL.37, NO.1, JANUARY 2016, DOI: 10.1109 / LED.2015.2499440); alternatively, the electron emission structure 4-kh can also be a gallium nitride field emission electron source, as described in reference 3 (reference 3: 2022 IEEE International Electron Devices Meeting (IEDM), DOI: 10.1109 / IEDM45625.2022.10019399). Both silicon field emission electron sources and gallium nitride field emission electron sources have the characteristics of providing high current density. Therefore, silicon field emission electron sources and gallium nitride field emission electron sources can be used to form large beam spot electron beams.

[0058] For example, in electron source module 1-k, electron source unit 1-ki is the silicon field emission electron source described in Reference 2, and the remaining electron source units 1-kj (j≠i) are the nanocrystalline silicon field emission electron sources described in Reference 1. Electron source units 1-ki and 1-kj can be integrated on the same substrate using semiconductor microfabrication technology, or they can be fabricated on different substrates and then integrated into a single electron source module.

[0059] As needed, the electron source unit 1-kh may include a plurality of electron source units with large beam spots. As needed, the electron source unit 1-kh may include a plurality of electron source units with small beam spots.

[0060] FIG5 is a schematic diagram of the composition of an electron source module 1-k of the electron source 1. As shown in FIG5, in at least one embodiment of the present application, the electron emission structures 4-ki of the plurality of electron source units 1-ki of an electron source module 1-k in the electron source 1 can be integrated on the first substrate 11 to form an electron source chip 101. For example, at least one electron emission structure 4-ki is fabricated on a single chip, and multiple electron emission structures 4-ki correspond to multiple single chips. These multiple single chips are integrated onto the first substrate 11 using bonding technology to form an electron source chip 101; alternatively, at least one electron emission structure 4-ki (for example, all electron emission structures 4-ki) can be fabricated on the first substrate 11 using the same manufacturing process (for example, multiple electron emission structures 4-ki are formed on a silicon substrate serving as the first substrate 11 using a microelectronics manufacturing process), thereby forming an electron source chip 101.

[0061] In at least one embodiment of the present application, the dedicated circuit units 5-ki of the plurality of electron source units 1-ki of an electron source module 1-k are integrated on the second substrate 12 to form a dedicated circuit chip 102. For example, at least one dedicated circuit unit 5-ki is fabricated on a single chip, and a plurality of dedicated circuit units 5-ki correspond to a plurality of single chips, which are integrated onto the second substrate 12 using bonding technology to form a dedicated circuit chip 102; or, at least one dedicated circuit unit 5-ki (for example, all dedicated circuit units 5-ki) are fabricated on the second substrate 12 using the same manufacturing process (for example, a plurality of dedicated circuit units 5-ki are formed on a silicon substrate serving as the second substrate 12 using a microelectronics manufacturing process), thereby forming a dedicated circuit chip 102.

[0062] The electron source chip 101 and the dedicated circuit chip 102 are electrically connected, thereby realizing electrical connection between the electron emission structure 4-ki and the dedicated circuit unit 5-ki in each electron source unit 1-ki in the electron source module 1-k.

[0063] Furthermore, the present application is not limited thereto. The electron emission structure integrated on the first substrate 11 may be from two or more electron source modules, and the dedicated circuit unit integrated on the second substrate 12 may be from two or more electron source modules. For example, the electron emission structures of the multiple electron source units of all electron source modules 1-k in the electron source 1 are integrated on the first substrate 11, and the dedicated circuit units of the multiple electron source units of all electron source modules 1-k in the electron source 1 are integrated on the second substrate 12.

[0064] The first substrate 11 and the second substrate 12 may be semiconductor substrates (eg, silicon substrates) or non-semiconductor substrates (eg, glass substrates, etc.).

[0065] As shown in FIG. 5 , the electron source chip 101 and the dedicated circuit chip 102 can be electrically connected by wire bonding, thereby simplifying the process.

[0066] The present application is not limited thereto, and the electron source chip 101 and the dedicated circuit chip 102 may also be electrically connected by substrate bonding, wherein the electron source chip 101 and the dedicated circuit chip 102 are stacked in the thickness direction to perform substrate bonding between the first substrate 11 and the second substrate 12 .

[0067] In some embodiments, substrate bonding includes substrate bonding using bumps. For example, a plurality of conductive bumps are provided on the surface or back side of at least one of the first substrate 11 and the second substrate 12, and each bump is electrically connected to the corresponding electron emission structure 4-ki or dedicated circuit unit 5-ki on the respective substrate. When the substrates are bonded, the mechanical and electrical connections of the first substrate 11 and the second substrate 12 are achieved through the bumps.

[0068] In some embodiments, substrate bonding may also include substrate bonding using through-silicon vias (TSVs) and / or through-glass vias (TGVs). For example, at least one of the first substrate 11 and the second substrate 12 is formed with a through-silicon via (TSV) or a through-glass via (TGV), and a conductive material is provided in the through-silicon via or the through-glass via, so that the two sides of the substrates are electrically connected. Thus, in the case of substrate bonding, an electrical connection between the first substrate 11 and the second substrate 12 can be formed by, for example, bumps, and the two side surfaces of the first substrate 11 and / or the second substrate 12 can be electrically connected by the conductive material provided in the through-silicon via or the through-glass via.

[0069] In the present application, the controller 3 can process the received graphic data to divide the graphic (e.g., a graphic to be directly written) into two or more sub-regions and assign at least one electron source module to each sub-region. The areas of the sub-regions can be the same or different. In one example, the areas of the sub-regions are the same, for example, each sub-region is a rectangle with a side length of 100-200 microns.

[0070] Furthermore, the controller 3 may divide at least one sub-region into a non-fine pattern (ie, a first pattern) and a fine pattern (ie, a second pattern), calculate the time for direct writing of the pattern, and improve the speed of direct writing while ensuring the accuracy of direct writing.

[0071] For example, the controller 3 may divide a pattern into multiple sub-regions, divide each sub-region into a first pattern and a second pattern (for example, the line width of the first pattern is greater than the line width of the second pattern), assign a first electron source unit to the first pattern, and assign a second electron source unit to the second pattern. For another example, when the controller 3 determines that using a large-spot electron beam to directly write non-fine patterns in a certain sub-region can improve the production capacity per unit time of the electron beam direct writing device 100, the controller 3 may control the direct writing of non-fine patterns using the large-spot electron beam, and the direct writing of fine patterns using the small-spot electron beam.

[0072] In the present application, the controller 3 can control the timing and / or duration of the electron beam generation by the first electron source unit and the second electron source unit, thereby performing direct write exposure on the electron beam photoresist 9 to form the first pattern and the second pattern in the electron beam photoresist 9. For example, the first electron source unit and the second electron source unit generate the electron beam simultaneously, or the first electron source unit and the second electron source unit generate the electron beam sequentially, or the processes of the first electron source unit and the second electron source unit generating the electron beam at least partially overlap.

[0073] In the present application, the controller 3 can divide the direct writing process of the graphics into multiple batches. In the direct writing process of each batch, a plurality of electron source modules each directly write to the corresponding sub-area, and the maximum direct writing range of each electron source module is the same as the area of ​​the sub-area corresponding to it. In addition, a plurality of electron source modules can simultaneously perform direct writing for their respective sub-areas, thereby increasing the speed of direct writing. After the direct writing process of each batch, the direct writing process of the next batch is started in the same manner as the direct writing process of each batch. Such a batch direct writing process continues until the direct writing of the graphics of all sub-areas is completed.

[0074] In this embodiment, substrate 8 can be a wafer commonly used in semiconductor manufacturing, such as a silicon wafer, a silicon-on-insulator (SOI) wafer, a silicon-germanium wafer, a germanium wafer, a gallium nitride wafer, a silicon carbide (SiC) wafer, or the like. It can also be an insulating wafer such as quartz, sapphire, or glass. Furthermore, the surface of the substrate can further include various thin films and structures required for semiconductor devices and microelectromechanical systems (MEMS) devices. This embodiment is not limited to this. Substrate 8 can also be a mask commonly used in semiconductor manufacturing.

[0075] According to Example 1 of the present application, in an electron beam direct writing device, a small beam spot electron beam can be used to form fine patterns, and a large beam spot electron beam can be used to form non-fine patterns, thereby ensuring the direct writing accuracy while increasing the direct writing speed and improving the production capacity per unit time of the electron beam direct writing device.

[0076] Example 2

[0077] Embodiment 2 of the present application provides an electron beam direct writing method, which uses the electron beam direct writing device 100 described in Embodiment 1 to perform electron beam direct writing (i.e., without using a mask plate, using an electron beam to directly form a pattern in the photoresist). Figure 4 is a schematic diagram of the electron beam direct writing method of the embodiment of the present application. As shown in Figure 4, the electron beam direct writing method includes:

[0078] Operation 201: The controller processes received graphic data to divide the graphic into two or more sub-regions, and allocates at least one electron source module to each sub-region;

[0079] Operation 202: Divide at least one of the sub-regions into a first pattern and a second pattern, assign the first electron source unit in the electron source module to the first pattern, and assign the second electron source unit in the electron source module to the second pattern; and

[0080] In operation 203 , the controller controls the first electron source unit and the second electron source unit to generate electron beams for electron beam direct writing to form the first pattern and the second pattern.

[0081] In operation 201, controller 3 processes the graphic data to be directly written, divides the graphic to be directly written into two or more sub-regions, and assigns a corresponding electron source module to each sub-region. Furthermore, controller 3 may also divide the direct writing process into one or more batches based on the specific shape of the graphic to be directly written, and assign sub-regions to be directly written for each batch.

[0082] In operation 202 , at least one sub-region (eg, each sub-region) is divided into a non-fine pattern (ie, a first pattern) and a fine pattern (ie, a second pattern), wherein a line width of the first pattern is greater than a line width of the second pattern.

[0083] In operation 203, the controller 3 controls the electron source 1 to directly write the pattern, while also controlling the workpiece stage 7 to perform the necessary scanning motion, i.e., the direct writing process. During the pattern direct writing process, fine patterns are directly written by the small beam spot electron source unit. When the controller determines that the overall direct writing time can be shortened, at least a portion of non-fine patterns is directly written by the large beam spot electron source unit. During the direct writing process, the small beam spot electron source unit and the large beam spot electron source unit can perform direct writing simultaneously.

[0084] In addition, as shown in FIG4 , the method may further include:

[0085] Operation 200: The controller receives the required direct-write graphic data and performs data processing.

[0086] For example, in operation 200 , the controller 3 may receive graphic data and perform necessary data processing on the graphic data to identify the graphic data.

[0087] In the present application, operation 202 and operation 203 may correspond to a batch of the direct writing process, and operation 202 and operation 203 may be repeatedly performed, thereby completing the direct writing of graphics in all sub-regions through multiple batches of direct writing.

[0088] According to Example 2 of the present application, a small-spot electron beam is used to form fine patterns, and a large-spot electron beam is used to form non-fine patterns, thereby ensuring the direct writing accuracy while increasing the direct writing speed and improving the production capacity per unit time of the electron beam direct writing equipment.

[0089] The present application has been described above in conjunction with specific embodiments. However, those skilled in the art should understand that these descriptions are merely illustrative and are not intended to limit the scope of protection of the present application. Those skilled in the art may make various modifications and variations to the present application based on the spirit and principles of the present application, and such modifications and variations are also within the scope of the present application.

Claims

1. An electron beam direct writing device, characterized in that: The electron beam direct writing device comprises: An electron source (1), the electron source comprising a plurality of electron source modules (1-k), at least one of the electron source modules (1-k) comprising a plurality of electron source units (1-kh), each of the electron source units generating a corresponding electron beam; and A controller (3) for controlling the electron source to generate at least one electron beam; wherein the plurality of electron source units of at least one of the electron source modules (1-k) include at least one first electron source unit and at least one second electron source unit, The electron beam generated by each of the first electron source units corresponds to an electron beam having a first beam spot, The electron beam generated by each of the second electron source units corresponds to an electron beam having a second beam spot, The area of ​​the first beam spot is more than twice the area of ​​the second beam spot.

2. The electron beam direct writing device according to claim 1, characterized in that: The electron source unit comprises: an electron emitting structure for generating an electron beam; A dedicated circuit unit controls the time when the electron emission structure generates the electron beam and the current density of the electron beam based on the instruction of the controller.

3. The electron beam direct writing device according to claim 1, characterized in that: A current density of the electron beam having the first beam spot is greater than or equal to a current density of the electron beam having the second beam spot.

4. The electron beam direct writing device according to claim 1, characterized in that: The electron beam direct writing device also includes: An electron beam shaping mechanism shapes the electron beam generated by the electron source unit to form the electron beam having the first beam spot and the electron beam having the second beam spot.

5. The electron beam direct writing device according to claim 1, characterized in that: The electron beam direct writing device also includes: A workpiece stage (7) is used to carry a substrate (8), and the workpiece stage moves under the control of the controller.

6. The electron beam direct writing device according to claim 1, characterized in that: The controller processes the received graphic data to divide the graphic into two or more sub-areas, and allocates at least one of the electron source modules to each sub-area; as well as dividing at least one of the sub-areas into a first figure and a second figure, assigning the first electron source unit in the electron source module to the first figure, and assigning the second electron source unit in the electron source module to the second figure, The line width of the first graphic is greater than the line width of the second graphic.

7. The electron beam direct writing device according to claim 6, characterized in that: The controller controls the first electron source unit and the second electron source unit to simultaneously generate electron beams to form the first pattern and the second pattern.

8. An electron beam direct writing method, characterized in that: The method uses the electron beam direct writing device according to any one of claims 1 to 7 to perform electron beam direct writing, and the method comprises: The controller processes the received graphic data to divide the graphic into two or more sub-areas, and allocates at least one of the electron source modules to each sub-area; and dividing at least one of the sub-areas into a first figure and a second figure, assigning the first electron source unit in the electron source module to the first figure, and assigning the second electron source unit in the electron source module to the second figure, The line width of the first graphic is greater than the line width of the second graphic.

9. The electron beam direct writing method according to claim 8, characterized in that: The method further comprises: The controller controls the first electron source unit and the second electron source unit to generate electron beams for electron beam direct writing to form the first pattern and the second pattern.

10. The electron beam direct writing method according to claim 8, characterized in that: The controller controls the first electron source unit and the second electron source unit to simultaneously generate electron beams.

Images