Electron beam direct writing device

Abstract

The present invention provides an electron beam direct writing device, comprising a control module and at least one electron beam source output module. The control module is used for generating i types of control signals; i is an integer greater than or equal to 2; any one of the electron beam source output module is enabled when receiving the i types of control signals at the same time, and then emits a corresponding electron beam; each electron beam source output module comprises a receiving unit, a beam current intensity regulation and control unit and an output unit; the beam current intensity regulation and control unit is used for providing an intensity regulation and control signal; when i control ends of each receiving unit receive the i types of control signals at the same time, the receiving unit generates an enable signal; each output unit emits a corresponding electron beam on the basis of a received enable signal and the intensity regulation and control signal and regulates and controls the beam current intensity of the electron beam by means of the intensity regulation and control signal. The present invention effectively solves the problems of inconsistent direct writing times, inconsistent uniformity, and the like caused by inconsistent beam current intensities of electron beam sources in an electron beam source array.

Description

Electron beam direct writing device Technical Field

[0001] The present invention relates to the field of integrated circuit manufacturing, and in particular to an electron beam direct writing device. Background Art

[0002] Electron-beam lithography plays an irreplaceable role in the fabrication of integrated circuit photomasks for micro- and nanosystems, and is a key technology driving the continuous reduction of feature sizes in these systems. The performance of electron-beam lithography depends not only on external conditions such as the state of the electron optical system, ambient temperature, and the spatial magnetic field, but also on the critical importance of controlling these conditions as process nodes extend to the hundred-nanometer level and below. To effectively improve the processing accuracy and pattern quality of electron-beam lithography, finer control of the electron beam is required.

[0003] However, when multiple electron beams are simultaneously present, simply controlling the beam emission is insufficient to guarantee direct writing efficiency and quality. This is due to inconsistent beam current intensities across the electron beam source array. These varying beam current intensities lead to inconsistent direct writing times and uniformity, among other issues that require urgent resolution.

[0004] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art.

[0005] Summary of the Invention

[0006] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an electron beam direct writing device to solve the problems of inconsistent direct writing time and uniformity caused by inconsistent beam intensities of each electron beam source in the electron beam source array in the prior art.

[0007] To achieve the above-mentioned and other related purposes, the present invention provides an electron beam direct writing device, comprising: a control module and at least one electron beam source output module;

[0008] The control module is used to generate i control signals; i is an integer greater than or equal to 2;

[0009] Each electron beam source output module is connected to the control module respectively; when any electron beam source output module receives i control signals at the same time, it is turned on and emits the corresponding electron beam;

[0010] Among them, each electron beam source output module includes a receiving unit, a beam intensity control unit and an output unit; the beam intensity control unit is used to provide an intensity control signal; the i control ends of each receiving unit respectively receive corresponding control signals, and generate a start signal when i control signals are received at the same time; each output unit respectively receives the corresponding start signal and the corresponding intensity control signal, and emits the corresponding electron beam based on the received start signal and the intensity control signal and controls the beam intensity of the electron beam through the intensity control signal.

[0011] Optionally, the output unit includes a first transistor and an electron beam source; the first end of the first transistor is connected to a first voltage source, the second end receives a corresponding start signal, and the third end receives a corresponding intensity control signal and is connected to the first end of the electron beam source; the first transistor is used to receive the start signal and the intensity control signal to generate a control voltage output to the first end of the electron beam source; the second end of the electron beam source is connected to a second voltage source, and the third end outputs the electron beam.

[0012] Optionally, the beam intensity control unit 122 includes a second transistor and a first variable resistor; the first end of the second transistor receives the first control signal, the second end receives the second control signal, and the third end is connected to the adjustment end of the first variable resistor; the first fixed end of the first variable resistor is grounded, and the second fixed end outputs the intensity control signal.

[0013] Optionally, the beam intensity control unit includes a third transistor, a fourth transistor, a second variable resistor, a first resistor and a second resistor; the first end of the third transistor receives a first control signal, the second end receives a second control signal, and the third end is connected to the adjustment end of the second variable resistor; the first fixed end of the second variable resistor is grounded, and the second fixed end is connected to a third voltage source via the first resistor; the first end of the fourth transistor is connected to the second fixed end of the second variable resistor, the second end is grounded via the second resistor, and the third end outputs the intensity control signal.

[0014] Optionally, the control module includes P first control lines and Q second control lines; P and Q are integers greater than or equal to 1; and the number of electron beam source output modules is less than or equal to the product of the number of the first control lines and the number of the second control lines; each first control line and each second control line are cross-arranged, and each first control line generates a first control signal respectively, and each second control line generates a second control signal respectively.

[0015] Optionally, the receiving unit includes a fifth transistor; the first end and the second end of the fifth transistor serve as the first control end and the second control end of the receiving unit respectively, and the third end outputs the start signal.

[0016] Optionally, the control module further includes P third control lines and Q fourth control lines; each third control line generates a third control signal; and each fourth control line generates a fourth control signal.

[0017] Optionally, the receiving unit includes a sixth transistor and a seventh transistor; the first end and the second end of the sixth transistor serve as the first control end and the second control end of the receiving unit respectively; the first end and the second end of the seventh transistor serve as the third control end and the fourth control end of the receiving unit respectively; the third end of the sixth transistor and the third end of the seventh transistor are connected and output the start signal.

[0018] Optionally, the electron beam direct writing device further includes an electron beam path control module; the electron beam path control module is used to generate a set of bias voltages set for the electron beam emitted in a surrounding manner to control the movement path of the electron beam.

[0019] Optionally, the electron beam direct writing device also includes a master control module; the master control module is respectively connected to each electron beam source output module and the control module, and is used to select and turn on the corresponding electron beam source output module to emit an electron beam, and adjust the beam intensity control unit in the electron beam source output module to thereby control the beam intensity of the emitted electron beam.

[0020] As described above, the electron beam direct writing device of the present invention has the following beneficial effects:

[0021] 1. The electron beam direct writing device of the present invention adjusts the beam intensity of each electron beam source by setting a beam intensity control unit, thereby avoiding problems such as inconsistent direct writing time and uniformity caused by inconsistent beam intensities of each electron beam source in the electron beam source array.

[0022] 2. The electron beam direct writing device of the present invention is equipped with an independent control circuit for each electron beam source, which can keep the electron beam source in a stable working state and achieve high-efficiency direct writing. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] FIG1 is a schematic structural diagram of an electron beam direct writing device according to the present invention.

[0024] FIG2 is a schematic structural diagram of a control module of the present invention.

[0025] FIG3 is a schematic structural diagram of another control module of the present invention.

[0026] FIG4 is a schematic structural diagram of an electron beam source output module according to the present invention.

[0027] FIG5 is a schematic structural diagram of the electron beam source of the present invention.

[0028] FIG6 is a schematic structural diagram of a receiving unit according to the present invention.

[0029] FIG. 7 is a schematic structural diagram of another receiving unit of the present invention.

[0030] FIG8 is a schematic structural diagram of another electron beam source output module of the present invention.

[0031] Component Reference Numerals 10 Operating Table 101 Processing Plane 1 Electron Beam Direct Writing Device 11 Control Module 12 Electron Beam Source Output Module 121 Receiving Unit 121a First Receiving Unit 121b Second Receiving Unit 122 Beam Intensity Control Unit 123 Output Unit 1231 Electron Beam Source 124 Delay Unit 13 Electron Beam Path Control Module 131 First Path Control Unit 132 Second Path Control Unit 133 Shielding Component 21 Electron Beam Source Output Module 211 Beam Intensity Control Unit DETAILED DESCRIPTION

[0032] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0033] Please refer to Figures 1 to 8. It should be noted that the figures provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the figures only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, number, and proportion of each component may be varied arbitrarily, and the component layout may also be more complex.

[0034] Example 1

[0035] As shown in FIG1 , this embodiment provides an electron beam direct writing device 1 , comprising: a control module 11 and at least one electron beam source output module 12 ; M is an integer greater than or equal to 1;

[0036] As shown in FIG. 1 and FIG. 2 , the control module 11 is configured to generate i types of control signals, where i is an integer greater than or equal to 2.

[0037] Specifically, in a first example, as shown in FIG2 , the control module 11 includes P first control lines and Q second control lines (in this embodiment, as shown in FIG2 , the first control line on the left is provided to provide a first control signal S1, and the second control line on the right is provided to provide a second control signal S2); P and Q are integers greater than or equal to 1, and the number of the electron beam source output modules is less than or equal to the product of the number of first control lines and the number of second control lines. In this example, each first control line and each second control line are arranged in a cross-arrangement, each first control line generates a first control signal S1, and each second control line generates a second control signal S2. When any electron beam source emission module receives the corresponding first control signal S1 and the corresponding second control signal S2 at the same time, it emits a corresponding electron beam. The cross structure between multiple first control lines and multiple second control lines can form an array, so that each electron beam source output module 12 is also arranged in an array, so that at least (P×Q) electron beam source output modules 12 can be independently controlled.

[0038] In the second example, as shown in Figure 3, the control module also includes P third control lines and Q fourth control lines; P and Q are integers greater than or equal to 1; each third control line generates a third control signal S3; each fourth control line generates a fourth control signal S4; each electron beam source output module 12 is respectively connected to the third control line and the fourth control line, and emits a corresponding electron beam when receiving the corresponding first control signal S1, the corresponding second control signal S2, the corresponding third control signal S3 and the corresponding fourth control signal S4 at the same time.

[0039] It should be noted that in this embodiment, in order to facilitate wiring, when there are multiple first control lines and multiple second control lines (or also include multiple third control lines and multiple fourth control lines), the first control lines are parallel to each other, and the second control lines are parallel to each other (if there are third control lines and fourth control lines, the third control lines are parallel to each other, and the fourth control lines are parallel to each other).

[0040] It should be noted that the more complex the intersection relationship between the control lines in the present invention, the greater the number of dot arrays that can be formed. In the first example, each electron beam source output module 12 can be gated in at least two control dimensions (the first control line and the second control line), or can be gated in four control dimensions (the first control line, the second control line, the third control line, and the fourth control line), thereby improving the accuracy of direct writing.

[0041] As shown in FIG1 , each electron beam source output module 12 is connected to the control module 11 , respectively. When any electron beam source output module 12 receives i control signals at the same time, it is turned on and emits the corresponding electron beam.

[0042] Specifically, as shown in Figures 3 and 4, each electron beam source output module 12 includes a receiving unit 121, a beam intensity control unit 122, and an output unit 123. The i control terminals of each receiving unit 121 receive corresponding control signals respectively, and generate a start signal when i control signals are received simultaneously. The beam intensity control unit 122 is used to provide an intensity control signal. Each output unit 123 receives a corresponding start signal and a corresponding intensity control signal respectively, and emits a corresponding electron beam based on the received start signal and the intensity control signal, and controls the beam intensity of the electron beam through the intensity control signal.

[0043] As an example, as shown in Figure 4, the output unit 123 includes a first transistor T1 and an electron beam source 1231; the first end of the first transistor T1 is connected to the first voltage source V1, the second end receives the corresponding start signal, and the third end receives the corresponding intensity control signal and is connected to the first end of the electron beam source 1231; the first transistor T1 is used to receive the start signal and the intensity control signal to generate a control voltage VG1 output to the first end of the electron beam source; the second end of the electron beam source is connected to the second voltage source V2, and the third end outputs the electron beam.

[0044] In this embodiment, as shown in FIG5 , the first end of the electron beam source 1231 receives the turn-on signal VG1, the second end (cathode) is connected to the second voltage source V2, and the third end (anode) outputs an electron beam. In this embodiment, the source of the electron beam source 1231 is connected to the second voltage source V2, the gate receives the control voltage VG1, and the drain serves as the output end. In this embodiment, the source of the electron beam source 1231 serves as the cathode, and the drain of the electron beam source 1231 serves as the anode. This ensures that when the electron beam source 1231 is turned on, the electrons are charged with voltage and have a high energy transition, thereby emitting an electron beam. If there are only two control signals, in this embodiment, the electron beam source 1231 that is not simultaneously selected by the first control signal S1 and the second control signal S2 remains in the off state; in another embodiment, the electron beam source 1231 that is not simultaneously selected by the first control signal S1 and the second control signal S2 maintains a stable electron beam emission intensity and continues to emit. The control module 11 of this embodiment can achieve stable output of control signals, which can effectively improve the efficiency of electron beam use. When continuous direct writing is required, the electron beam can remain stably on, achieving a duty cycle of nearly 100% in the on state, effectively improving the direct writing rate.

[0045] It should be noted that, in another example, the gate of the electron beam source 1231 may be connected to the second voltage source V2, and the source may receive the control voltage VG1, thereby achieving stable emission of the electron beam.

[0046] At the same time, in this embodiment, the potential of the second voltage source V2 can be set to a common bias potential provided by the common electrode, or a special bias potential provided by a bias circuit. Furthermore, the anode in this embodiment can be partially fabricated on the electron beam source 1231, or can be an independent component structure, or can be composed of an anode structure on the electron beam source 1231 and an external independent anode structure component. Based on this, the anode can be a single-layer structure or a composite layer structure, and different voltage intensities can be applied to each layer of the anode structure.

[0047] It should be further explained that the multiple electron beam source output modules 12 and the control module 11 can be prepared on the same wafer substrate, or can be combined together later through 3D packaging integration, and the present embodiment is not limited thereto.

[0048] As an example, as shown in Figure 4, the beam intensity control unit 122 includes a second transistor T2 and a first variable resistor RX1; the first end of the second transistor T1 receives the first control signal VC1, the second end receives the second control signal VC2, and the third end is connected to the adjustment end of the first variable resistor RX1; the first fixed end of the first variable resistor RX1 is grounded, and the second fixed end outputs the intensity control signal.

[0049] In this embodiment, the control voltage VG1 received by the electron beam source is changed by a series resistor voltage divider method, and the amplitude of the control voltage VG1 is flexibly adjusted by changing the resistance value of the series variable resistor RX1 to achieve the control of the beam current intensity of each electron beam. The variable resistor RX1 can be set as a resistive variable memory for storing different resistance values, which can be convenient for subsequent use. When the beam current intensity of a single electron beam source 1231 is significantly different from the beam current intensity of the electron beams emitted by other electron beam sources 1231, the voltage received by the electron beam source 1231 can be controlled by adjusting its beam current intensity control unit, thereby regulating the beam current intensity of the emitted electron beam so that its performance is close to the average value of the electron beam source array. Or when it is necessary to increase or decrease the electron beam current intensity of the electron beam source 1231 in a specific working mode, the beam current intensity of each electron beam can be adjusted separately.

[0050] It should be noted that the variable resistor can be set as a transistor that can store charge. After storing different amounts of charge, its on-resistance will change accordingly. In this process, it acts as a variable resistor, thereby ensuring subsequent use. The on-resistance of the transistor changes, essentially acting as a variable resistor.

[0051] It should be further explained that the first control signal VC1 and the second control signal VC2 received by the beam intensity control unit 122 can be manually input from the outside, or a memory storage module can be set in the electron beam direct writing device 1 for input, and a new control line can be added to the control module 11 to control the beam intensity control unit 122 to send an intensity control signal. In this embodiment, in addition to sending a control signal so that the receiving unit 111 can send a start signal, the control module 11 also sends a control signal so that the beam intensity control unit 122 can send an intensity control signal, thereby realizing that one module simultaneously controls the start of the electron beam and the beam intensity after start-up, which can better ensure the integration of the electron beam direct writing device. In addition, the beam intensity control unit 122 has a built-in memory storage module, and the memory storage module can also be controlled by the control unit 11. (It can also be controlled externally) It is used to refresh the storage state in the memory storage module and write a new storage value to change the bias voltage of the electron beam source 1231 connected to it in subsequent operations. It can store the level state of each potential and convert it into a corresponding voltage to achieve flexible adjustment of the voltage of the electron beam source 1231. In addition, it can adjust the electron beam source 1231 with uneven performance within the electron beam source array to make the direct writing performance of the entire system more uniform and stable. Through the modulation of the storage module, the electron beam source 1231 can also be operated in different power modes, thereby adjusting the electron beam current intensity to meet the needs of different direct writing scenarios.

[0052] As a first example, as shown in Figure 6, when the control module 11 includes P first control lines and Q second control lines, the receiving unit 121 is recorded as a first receiving unit 121a; the first receiving unit 121a includes a fifth transistor T5; the first end and the second end of the fifth transistor T5 respectively serve as the first control end and the second control end of the receiving unit 121 (in this example, the first receiving unit 121a), and the third end outputs the start signal.

[0053] In the second example, as shown in Figure 7, when the control module 121 further includes P third control lines and Q fourth control lines, the receiving unit 121 is recorded as a second receiving unit 121b; the receiving unit 121 (the second receiving unit 121b in this example) includes a sixth transistor T6 and a seventh transistor T7; the first end and the second end of the sixth transistor T6 serve as the first control end and the second control end of the receiving unit 121 (the second receiving unit 121b in this example), respectively; the first end and the second end of the seventh transistor T7 serve as the third control end and the fourth control end of the receiving unit 121 (the second receiving unit 121b in this example), respectively; the third end of the sixth transistor T6 and the third end of the seventh transistor T7 are connected and output the start signal.

[0054] Specifically, each electron beam source output module 12 further includes a delay unit 124 ; the delay unit 124 is disposed between the receiving unit 121 and the output unit 123 , and is used to extend the duration of the start signal.

[0055] In this embodiment, the delay unit 124 is configured as a clamping structure; the clamping structure clamps the turn-on signal when the voltage of the received turn-on signal becomes smaller to extend the duration of the turn-on signal. In this embodiment, the clamping structure can be configured as a static random access memory (SRAM), which can keep the potential of the output turn-on signal stable when no new turn-on signal is output by the receiving unit 121. In this embodiment, the clamping structure can be configured as a static random access memory (SRAM), which can keep the potential of the output conduction signal stable. In addition, the clamping structure can also be configured as a trigger with similar functions. As long as the structure can achieve the purpose of clamping the conduction signal to extend the effective time of the conduction signal, it is within the protection scope of this embodiment.

[0056] In another embodiment, the delay unit 124 is configured as a capacitor. The first plate of the capacitor receives the start signal, and the second plate is connected to the third end of the first transistor T1. In this embodiment, when the first transistor T1 is configured as a PMOS tube, the first plate of the capacitor is connected to the gate of the PMOS tube, and the second plate is connected to the drain of the PMOS tube. When the first transistor T1 is turned off, the charge stored in the capacitor keeps the gate potential of the first transistor T1 stable for a certain period of time, thereby achieving stable operation of the output unit 123, and further achieving the electron beam source 1231 to maintain a stable on or off state. Avoid the problem of unstable and discontinuous electron beam direct writing during the refresh cycle of the control module 11.

[0057] As shown in FIG1 , the electron beam direct writing device 1 further includes an electron beam path control module 13 .

[0058] Specifically, the electron beam path control module 13 is used to generate a set of bias voltages for the electron beam emitted in a circular manner, so as to control the movement path of the electron beam.

[0059] As an example, as shown in Figure 1, the electron beam path control module 13 includes at least a first path control unit 131. Each of the first path control units 131 includes a set of electrodes, each of which surrounds the periphery of the emitted electron beam. By adjusting the bias voltage on each set of electrodes, the magnetic field generated by each set of electrodes is controlled. Each electron beam is deflected once by the magnetic field generated by the first path control unit 131 and then again by the magnetic field generated by the second path control unit 132, thereby reaching a predetermined position.

[0060] It should be noted that the first path control unit 131 can be used to make a large deflection in the movement path of the electron beam, and the second path control unit 132 is used to make a small deflection in the movement path of the electron beam, thereby more accurately controlling the position reached by the electron beam. In this embodiment, the emitted electron beam eventually reaches the processing plane 101 set on the upper surface of the operating table 10. The processing plane 101 can be set to a pattern processing mask layer or a wafer substrate. In this embodiment, by adjusting the voltage on each electrode in the first path control unit 131 and the second path control unit 132, the electron beam emitted by each electron beam source 1231 is controlled to reach a preset position of the operating table 10, thereby controlling the direct writing of the pattern.

[0061] In this embodiment, a shielding member 133 is further disposed between the first path control unit 131 and the second path control unit 132. The shielding member 133 is a shielding plate having a gap therein. The gap is positioned at a predetermined path position after the electron beam passes through the first path control unit 131. The shielding plate is used to shield excess electron beams and electron beams that do not conform to the predetermined path, thereby controlling the number and movement angle of the electron beams entering the second path control unit 132.

[0062] As shown in Figure 1, the electron beam direct writing device 1 also includes a master control module (not shown in the figure); the master control module is respectively connected to each electron beam source output module 12 and the control module 11, and is used to select and turn on the corresponding electron beam source output module 12 to emit an electron beam, and adjust the beam intensity control unit 122 in the electron beam source output module 12 to control the beam intensity of the emitted electron beam.

[0063] As an example, the master control module 1 includes at least a voltage source generation circuit (not shown); the voltage source generation circuit is connected to each electron beam source output module 12 and the control module 11, and based on the control module 11, selects and turns on the corresponding electron beam source output module 12 to emit an electron beam, and adjusts the electron beam source output modules in the electron beam source output modules 12 to control the beam current intensity of the emitted electron beam. In this embodiment, both the first voltage source V1 and the second voltage source V2 can be generated and output by the voltage source generation circuit.

[0064] This embodiment performs gating control through the control module 11, and divides the control module 11 into two types of control lines, thereby reducing the connection density and wiring difficulty of each electron beam source emission unit 111, and also reducing the computing power requirements of the adjustment unit (such as: computer control terminal), making it easier to implement in equipment manufacturing. At the same time, this embodiment configures an independent control circuit for each electron beam source 1231, which can enable the electron beam source 1231 to maintain a stable working state and achieve high-efficiency direct writing. In addition, this embodiment effectively solves the problems of inconsistent direct writing time and inconsistent uniformity caused by inconsistent beam intensities of each electron beam source in the electron beam source array through the beam intensity control unit.

[0065] Example 2

[0066] In the first embodiment, to ensure the operational stability of the electron beam source 1231, the current flowing through the first variable resistor RX1 should be minimized to avoid affecting the stability of the resistance value. Therefore, this embodiment further adjusts the voltage output of the second variable resistor RX2 to ensure that the second variable resistor RX2 can still maintain the operational stability of the electron beam source 1231 at a higher current intensity.

[0067] As shown in FIG8 , this embodiment provides an electron beam direct writing device that is substantially the same as that of the first embodiment, except that the beam intensity control unit 211 in the electron beam source output module 21 of this embodiment is different.

[0068] Specifically, the beam intensity control unit 211 includes a third transistor T3, a fourth transistor T4, a second variable resistor RX2, a first resistor R1, and a second resistor R2. The first end of the third transistor T3 receives the first control signal VC1, the second end receives the second control signal VC2, and the third end is connected to the adjustment end of the second variable resistor RX2. The first fixed end of the second variable resistor RX2 is grounded, and the second fixed end is connected to the third voltage source V3 via the first resistor R1. The first end of the fourth transistor T4 is connected to the second fixed end of the second variable resistor RX2, the second end is grounded via the second resistor R2, and the third end outputs the intensity control signal. In this embodiment, the fourth transistor T4 (as shown in FIG8 ) is introduced to act as a variable resistor on the voltage source connected to the first transistor T1. The second variable resistor RX2 does not directly affect the first transistor T1, but indirectly affects the first transistor T1 by affecting the fourth transistor T4, thereby achieving adjustment of the electron beam intensity and ensuring that the current intensity of the second variable resistor can be maintained at a low level.

[0069] It should be noted that the material or type of other resistors connected in series with the second variable resistor RX2 (e.g., the first resistor R1) should be consistent with that of the second variable resistor RX2. This ensures that the scaling ratios of the resistance values ​​of the second variable resistors RX2 and the other resistors connected in series remain consistent despite the influence of the external environment. This allows the voltage of the output signal of the beam intensity control unit 211 to remain stable and substantially unaffected by external environmental factors (e.g., temperature changes, light changes, electromagnetic field changes, etc.). Furthermore, each resistor (the second variable resistor RX2, the first resistor R1, and the second resistor R2) can be configured as a transistor structure, with the internal resistance of the transistors controlling the input and output of the voltage signal, thereby controlling the magnitude, intensity, and stability of the output signal of the beam intensity control unit.

[0070] The other parts of the electron beam direct writing device in this embodiment are basically the same as those in the first embodiment, and are not described in detail here. In addition, the third voltage source V3 in this embodiment can also be generated and output by a voltage source generating circuit.

[0071] It should be noted that in this embodiment and in Example 1, each transistor (including the first transistor T1, the second transistor T2, the third transistor T3, the fourth transistor T4, the fifth transistor T5, the sixth transistor T6, and the seventh transistor T7) is configured as a MOS transistor. In practice, each transistor can also be configured as a BJT transistor, an IGBT transistor, etc., and the actual connection method can be based on the actual device used and is not limited to this embodiment.

[0072] In summary, the present invention provides an electron beam direct writing device, comprising a control module and at least one electron beam source output module; the control module is used to generate i control signals; i is an integer greater than or equal to 2; any electron beam source output module in each electron beam source output module is turned on when it receives i control signals at the same time, thereby emitting a corresponding electron beam; wherein each electron beam source output module includes a receiving unit, a beam intensity control unit and an output unit; the beam intensity control unit is used to provide an intensity control signal; the i control terminals of each receiving unit generate a turn-on signal when they receive i control signals at the same time; each output unit emits a corresponding electron beam based on the received turn-on signal and intensity control signal and controls the beam intensity of the electron beam through the intensity control signal. The present invention effectively solves the problems of inconsistent direct writing time and uniformity caused by inconsistent beam intensities of each electron beam source in an electron beam source array. Therefore, the present invention effectively overcomes the various shortcomings of the prior art and has high industrial utilization value.

[0073] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. An electron beam direct writing device, characterized in that: The electron beam direct writing device comprises: a control module and at least one electron beam source output module; The control module is used to generate i control signals; i is an integer greater than or equal to 2; Each electron beam source output module is connected to the control module respectively; any electron beam source output module among the electron beam source output modules is turned on when receiving i kinds of control signals at the same time, and then emits the corresponding electron beam; Among them, each electron beam source output module includes a receiving unit, a beam intensity control unit and an output unit; the beam intensity control unit is used to provide an intensity control signal; the i control ends of each receiving unit respectively receive corresponding control signals, and generate a start signal when i control signals are received at the same time; each output unit respectively receives a corresponding start signal and a corresponding intensity control signal, and emits a corresponding electron beam based on the received start signal and the intensity control signal, and controls the beam intensity of the electron beam through the intensity control signal.

2. The electron beam direct writing device according to claim 1, characterized in that: The output unit includes a first transistor and an electron beam source; The first end of the first transistor is connected to a first voltage source, the second end receives a corresponding start signal, and the third end receives a corresponding intensity control signal and is connected to the first end of the electron beam source; the first transistor is used to receive the start signal and the intensity control signal to generate a control voltage to output to the first end of the electron beam source; The second end of the electron beam source is connected to a second voltage source, and the third end outputs the electron beam.

3. The electron beam direct writing device according to claim 2, characterized in that: The beam intensity control unit 122 includes a second transistor and a first variable resistor; The first end of the second transistor receives the first control signal, the second end receives the second control signal, and the third end is connected to the adjustment end of the first variable resistor; The first fixed end of the first variable resistor is grounded, and the second fixed end outputs the intensity control signal.

4. The electron beam direct writing device according to claim 2, characterized in that: The beam intensity control unit includes a third transistor, a fourth transistor, a second variable resistor, a first resistor and a second resistor; The first end of the third transistor receives the first control signal, the second end receives the second control signal, and the third end is connected to the adjustment end of the second variable resistor; A first fixed end of the second variable resistor is grounded, and a second fixed end is connected to a third voltage source via the first resistor; The first end of the fourth transistor is connected to the second fixed end of the second variable resistor, and the second end is connected to the second fixed end of the second variable resistor via the The second resistor is grounded, and the third terminal outputs the intensity control signal.

5. The electron beam direct writing device according to claims 1 to 4, characterized in that: The control module includes P first control lines and Q second control lines; P and Q are integers greater than or equal to 1; and the number of the electron beam source output modules is less than or equal to the product of the number of the first control lines and the number of the second control lines; Each first control line is cross-arranged with each second control line, and each first control line generates a first control signal, and each second control line generates a second control signal.

6. The electron beam direct writing device according to claim 5, characterized in that: The receiving unit includes a fifth transistor; The first end and the second end of the fifth transistor serve as the first control end and the second control end of the receiving unit respectively, and the third end outputs the start signal.

7. The electron beam direct writing device according to claims 1 to 4, characterized in that: The control module also includes P third control lines and Q fourth control lines; Each third control line generates a third control signal respectively; each fourth control line generates a fourth control signal respectively.

8. The electron beam direct writing device according to claim 7, characterized in that: The receiving unit includes a sixth transistor and a seventh transistor; The first end and the second end of the sixth transistor serve as the first control end and the second control end of the receiving unit respectively; The first end and the second end of the seventh transistor serve as the third control end and the fourth control end of the receiving unit respectively; The third end of the sixth transistor and the third end of the seventh transistor are connected and output the start signal.

9. The electron beam direct writing device according to claim 1, characterized in that: The electron beam direct writing device also includes an electron beam path control module; The electron beam path control module is used to generate a set of bias voltages set on the electron beam emitted in a surrounding manner to control the movement path of the electron beam.

10. The electron beam direct writing device according to claim 1, characterized in that: The electron beam direct writing device also includes a master control module; The master control module is connected to each electron beam source output module and the control module respectively, and is used to select and turn on the corresponding electron beam source output module to emit an electron beam, and to adjust the beam intensity control unit in the electron beam source output module to control the beam intensity of the emitted electron beam.

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