Electron beam direct writing device and electron beam direct writing system

Abstract

The present invention provides an electron beam direct writing device and an electron beam direct writing system. The electron beam direct writing device comprises: an emission regulation and control unit and X electron beam source emission units, wherein X is an integer greater than or equal to 1; the emission regulation and control unit is used for generating Y gating signals, wherein Y is an integer greater than or equal to 2; each electron beam source emission unit comprises an ON signal generation module, an ON signal holding module, and an electron beam generation module; Y control ends of the ON signal generation module are arranged in one-to-one correspondence with the Y gating signals; the ON signal generation module is used for generating an ON signal while receiving a corresponding gating signal; the ON signal holding module receives the gating signal and is used for prolonging the active time of the ON signal; and the electron beam generation module receives the ON signal of which the active time is prolonged, and emits a corresponding electron beam within the active time of the ON signal. The present invention is used for solving the problems such as low direct writing speed, in the electron beam direct writing process, caused by the reaction time of an electron beam source before responding to a control instruction.

Description

Electron beam direct writing device and electron beam direct writing system Technical Field

[0001] The present invention relates to photolithography technology, in particular to an electron beam direct writer and an electron beam direct writing system. Background Art

[0002] Electron-beam lithography (EBL) is a type of maskless lithography that uses extremely short-wavelength focused electrons to directly act on the surface of an electron-sensitive photoresist to create micro- and nanostructures that conform to the designed pattern. While EBL systems offer the advantages of ultra-high resolution (capable of transferring patterns with a maximum size of less than 10 nm) and flexible patterning (capable of direct writing without a mask), they also suffer from low exposure efficiency and complex control.

[0003] Electron beam lithography requires high-speed direct writing despite a dramatic increase in the amount of graphic data, while also ensuring that the images of the photomask patterns and the structural patterns at each level of the device are more refined and accurate. Therefore, in pursuit of accurate graphic imaging, the electron beam spot size must be reduced, but this results in a decrease in the current of a single electron beam, resulting in a longer electron beam direct writing time. If multiple electron beams are used to write together to ensure the overall writing time, there is often a problem of slow direct response speed of the electron beam due to the complexity of the control instructions and a certain instruction blank period within the refresh control instruction cycle.

[0004] Based on this, the slow direct writing speed caused by the reaction time difference of the electron beam source in responding to the control instructions during the electron beam direct writing process has become an urgent problem that needs to be solved in electron beam lithography.

[0005] It should be noted that the above introduction to the technical background is merely intended to provide a clear and complete description of the technical solutions of this application and facilitate understanding by those skilled in the art. Simply because these solutions are described in the background technology section of this application, it should not be assumed that the above technical solutions are well known to those skilled in the art.

[0006] Summary of the Invention

[0007] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide an electron beam direct writing device and an electron beam direct writing system to solve the problem of slow direct writing speed caused by the reaction time difference of the electron beam source in responding to the control instruction in the prior art electron beam direct writing process.

[0008] To achieve the above-mentioned and other related purposes, the present invention provides an electron beam direct writer, comprising: an emission control unit and X electron beam source emission units; X is an integer greater than or equal to 1;

[0009] The transmission control unit is used to generate Y types of gating signals, where Y is an integer greater than or equal to 2;

[0010] Each electron beam source emission unit is connected to the emission control unit respectively; wherein, any electron beam source emission unit among the electron beam source emission units is turned on when receiving Y kinds of gating signals at the same time, thereby emitting the corresponding electron beam;

[0011] Among them, each electron beam source emission unit includes a conduction signal generating module, a conduction signal holding module and an electron beam generating module; the Y control terminals of the conduction signal generating module are set in one-to-one correspondence with Y types of selection signals; the conduction signal generating module is used to generate a conduction signal when receiving the corresponding selection signals at the same time; the conduction signal holding module receives the conduction signal and is used to extend the effective time of the conduction signal; the electron beam generating module receives the conduction signal with extended effective time and emits the corresponding electron beam within the effective time of the conduction signal.

[0012] Optionally, when Y=2, the emission control unit 111 includes i first control lines and j second control lines; i and j are integers greater than or equal to 1 and i×j≥X; each first control line is cross-arranged with each second control line, and each first control line generates a first selection signal and each second control line generates a second selection signal; the first control end of each electron beam source emission unit is respectively connected to the corresponding first control line, and the second control end is respectively connected to the corresponding second control line, and outputs the conduction signal when receiving the corresponding first selection signal and the corresponding second selection signal at the same time.

[0013] Optionally, the conduction signal generating module includes a first transistor;

[0014] The first terminal and the second terminal of the first transistor serve as the first control terminal and the second control terminal of the conduction signal generating module respectively, and output the conduction signal based on the first selection signal and the second selection signal received simultaneously.

[0015] Optionally, when Y=4, the emission control unit 111 also includes i third control lines and j fourth control lines; each third control line generates a third selection signal; each fourth control line generates a fourth selection signal; each electron beam source emission unit is connected to the third control line and the fourth control line, respectively, and outputs the conduction signal when it is turned on when it receives the corresponding first selection signal, the corresponding second selection signal, the corresponding third selection signal and the corresponding fourth selection signal at the same time.

[0016] Optionally, the conduction signal generating module includes a second transistor and a third transistor;

[0017] The first end and the second end of the second transistor serve as the first control end and the second control end of the conduction signal generating module respectively;

[0018] The first end and the second end of the third transistor serve as the third control end and the fourth control end of the conduction signal generating module respectively; the third end of the second transistor and the third end of the third transistor are connected and output the conduction signal.

[0019] Optionally, each electron beam source emitting unit 112 further includes an auxiliary clamping module; the auxiliary clamping module is arranged between the conduction signal holding module and the electron beam generating module to stabilize the voltage of the output signal of the conduction signal holding module.

[0020] Optionally, the auxiliary clamping module includes a diode, a fourth transistor and a resistor; the first end of the fourth transistor is connected to the conduction signal holding module, the second end is connected to the first operating voltage via the resistor, and the third end is connected to the electron beam generating module; the cathode of the diode is connected to the third end of the fourth transistor, and the anode is grounded.

[0021] Optionally, the electron beam generating module includes a fifth transistor and an electron beam source;

[0022] The first terminal of the fifth transistor receives the extended conduction signal, the second terminal is connected to the first working voltage, and provides a switch control signal to the electron beam source during the effective time of the conduction signal;

[0023] The electron beam source has a first end for receiving the switch control signal, a second end for connecting to a second operating voltage, and a third end for outputting the electron beam.

[0024] Optionally, the conduction signal holding module is configured as a clamping structure; a first end of the clamping structure receives the conduction signal, and a second end is connected to the first end of the fifth transistor.

[0025] Optionally, the clamping structure is configured as an SRAM memory.

[0026] Optionally, the conduction signal holding module is configured as a capacitor; a first plate of the capacitor receives the conduction signal, and a second plate is connected to the third end of the fifth transistor.

[0027] To achieve the above-mentioned object and other related objects, the present invention provides an electron beam direct writing system, characterized in that: the electron beam direct writing system includes a deflection circuit and the electron beam direct writer described above;

[0028] The deflection circuit includes at least one group of electrodes; each electrode is arranged around the emitted electron beam, and the movement path of the electron beam is regulated based on the voltage applied to each electrode.

[0029] Optionally, the electron beam direct writing system also includes a bias signal generating circuit; the bias signal generating circuit is respectively connected to each electron beam source emission unit and the emission control unit, and based on the emission control unit, it selects to turn on the corresponding electron beam source emission unit to emit the electron beam, and adjusts the bias voltage in the electron beam source emission unit to control the beam current intensity of the emitted electron beam.

[0030] As described above, the electron beam direct writing device and the electron beam direct writing system of the present invention have the following beneficial effects:

[0031] 1. The electron beam direct writer and the electron beam direct writing system of the present invention delay the effective time of the conduction signal by setting a conduction signal holding module, thereby avoiding the problem of slow direct writing speed caused by the reaction time of the electron beam source responding to the control instruction due to the interval between the signal switching of the emission control unit.

[0032] 2. The electron beam direct writer and electron beam direct writing system of the present invention perform gating control on each electron beam through an emission control unit, thereby reducing the connection density and wiring difficulty of each electron beam source emission unit, and also reducing the computing power requirements of the computer control end, making it easier to implement in equipment manufacturing.

[0033] 3. The electron beam direct writer and the electron beam direct writing system of the present invention configure an independent control circuit for each electron beam source, which can keep the electron beam source in a stable working state and achieve high-efficiency direct writing. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] FIG1 is a schematic structural diagram of an electron beam direct writing system according to the present invention.

[0035] FIG. 2 is a schematic structural diagram of an electron beam writer according to the present invention.

[0036] FIG. 3 is a schematic structural diagram of a conduction signal maintaining module of the electron beam source emission unit of FIG. 2 .

[0037] FIG. 4 is a schematic structural diagram showing another conduction signal maintaining module of the electron beam source emission unit of FIG. 2 .

[0038] FIG. 5 is a schematic structural diagram of the electron beam source shown in FIG. 2 .

[0039] FIG6 is a schematic structural diagram of another electron beam writer according to the present invention.

[0040] FIG. 7 is a schematic structural diagram of a conduction signal maintaining module of the electron beam source emission unit of FIG. 6 .

[0041] FIG. 8 is a schematic structural diagram showing another conduction signal maintaining module of the electron beam source emission unit of FIG. 6 .

[0042] FIG. 9 is a schematic structural diagram of a deflection circuit according to the present invention.

[0043] Component Reference Numbers 00 Machine 01 Wafer Processing Layer 1 Electron Beam Direct Writing System 11 Electron Beam Direct Writer 111 Emission Control Unit 112 Electron Beam Source Emission Unit 1121 On-Signal Generation Module 1122 On-Signal Holding Module 1123 Electron Beam Generation Module 1123a Electron Beam Source 1124 Capacitor 12 Deflection Circuit 121 First Deflection Unit 122 Second Deflection Unit 123 Shielding Structure 13 Bias Signal Generation Circuit 21 Electron Beam Direct Writer 211 Electron Beam Source Emission Unit 2111 On-Signal Generation Module DETAILED DESCRIPTION

[0044] The following describes the embodiments of the present invention through specific examples. Those skilled in the art will readily understand the other advantages and benefits of the present invention from the disclosure herein. The present invention may also be implemented or applied through various other specific embodiments, and the details in this specification may be modified or altered based on different viewpoints and applications without departing from the spirit of the present invention.

[0045] Please refer to Figures 1 to 9. It should be noted that the figures provided in this embodiment are merely schematic illustrations of the basic concept of the present invention. Therefore, the figures only show components relevant to the present invention and are not drawn according to the number, shape, and size of components in actual implementation. In actual implementation, the type, number, and proportion of each component may be varied arbitrarily, and the component layout may also be more complex.

[0046] Example 1

[0047] As shown in FIG1 to FIG5 , the present invention provides an electron beam writer 11 , comprising: an emission control unit 111 and X electron beam source emission units 112 ; X is an integer greater than or equal to 1;

[0048] As shown in FIG1 , the transmission control unit 111 is configured to generate Y types of gating signals, where Y is an integer greater than or equal to 2.

[0049] As an example, as shown in Figures 1 and 2, when Y=2, the emission control unit 111 generates two types of gating signals. The emission control unit 111 includes i first control lines and j second control lines; i and j are integers greater than or equal to 1 and i×j≥X; each first control line is arranged crosswise with each second control line, and each first control line generates a first gating signal respectively, and each second control line generates a second gating signal respectively; the first control end of each electron beam source emission unit 112 is respectively connected to the corresponding first control line, and the second control end is respectively connected to the corresponding second control line; any electron beam source emission unit 112 outputs the conduction signal after receiving the corresponding first gating signal and the corresponding second gating signal at the same time.

[0050] In this embodiment, if i and j are set to 2, the emission control unit 111 includes two first control lines and two second control lines, and can control a maximum of four (i.e., 2×2=4) electron beam source emission units 112, and each electron beam source emission unit is respectively connected to a corresponding first control line and a second control line, and then transmits a signal when the connected first control line and the second control line are both turned on. In this embodiment, as shown in Figure 2, the emission control unit 111 includes one first control line i1 and one second control line j1.

[0051] In this embodiment, to facilitate wiring, when there are multiple first control lines and multiple second control lines, the first control lines are parallel to each other, the second control lines are parallel to each other, and the angles between the first control lines and the second control lines are right angles.

[0052] It should be noted that in the present invention, a dot matrix array can be formed by the intersection structure between multiple first control lines and multiple second control lines, so that each electron beam source emission unit 112 is also arranged in an array. Therefore, the more complex the intersection relationship between the first control line and the second control line, the greater the number of dot matrices that can be formed. In the present invention, each electron beam source emission unit 112 can be gated in at least two control dimensions (first control line and second control line), so that the accuracy of direct writing is improved.

[0053] As shown in FIG1 , each electron beam source emitting unit 112 is connected to an emission control unit 111 , respectively. When any electron beam source emitting unit 112 receives Y selection signals at the same time, it is turned on and emits a corresponding electron beam.

[0054] Specifically, as shown in FIG. 3 , each electron beam source emitting unit 112 includes a conduction signal generating module 1121 , a conduction signal maintaining module 1122 and an electron beam generating module 1123 .

[0055] As an example, the Y control terminals of the conduction signal generating module 1121 are configured to correspond one-to-one with Y selection signals; the conduction signal generating module 1121 is configured to generate a conduction signal upon receiving the corresponding selection signals simultaneously. In this embodiment, Y is set to 2. Then, upon receiving both the first and second selection signals simultaneously, the conduction signal is generated and output to a subsequent module.

[0056] In this embodiment, the conduction signal generating module 1121 includes a first transistor T1; the first end and the second end of the first transistor T1 serve as the first control end and the second control end of the conduction signal generating module 1121, respectively, and outputs the conduction signal based on the first selection signal and the second selection signal received simultaneously.

[0057] It should be noted that in this embodiment, the first transistor T1 is a MOS transistor. In fact, the first transistor T1 can also be set as a BJT transistor, IGBT transistor, etc. Its actual connection method can be set based on the actual device used and is not limited to this embodiment.

[0058] As an example, the conduction signal maintaining module 1122 receives the selection signal and is configured to extend the effective time of the conduction signal.

[0059] In this embodiment, as shown in FIG3 , the conduction signal holding module 1122 is configured as a clamping structure. In this embodiment, the electron beam generating module 1123 includes a fifth transistor T5 and an electron beam source 1123a. When the first end of the fifth transistor T5 receives the extended conduction signal, the second end is connected to the first operating voltage VDD1, and the third end is connected to the first end of the electron beam source 1123a, the first end of the clamping structure receives the conduction signal, and the second end is connected to the first end of the fifth transistor T5. When the voltage of the received conduction signal decreases, the clamping structure clamps the conduction signal to extend the effective time of the conduction signal. In this embodiment, the clamping structure can be configured as a static random access memory (SRAM), which can maintain the voltage of the output conduction signal stable when the conduction signal generating module 1121 does not output a new conduction signal. In addition, the clamping structure can also be configured as a trigger with similar functions. Any structure that can achieve the purpose of clamping the conduction signal to extend the effective time of the conduction signal is within the scope of protection of this embodiment.

[0060] In another embodiment, as shown in FIG4 , the conduction signal holding module is configured as a capacitor 1124. The first plate of the capacitor 1124 receives the conduction signal, and the second plate is connected to the third end of the fifth transistor T5. In this embodiment, when the fifth transistor T5 is configured as a PMOS tube, the first plate of the capacitor 1124 is connected to the gate of the PMOS tube, and the second plate is connected to the drain of the PMOS tube. When the first transistor T1 is turned off, the charge stored in the capacitor 1124 enables the gate potential of the fifth transistor T5 to remain stable for a certain period of time, thereby achieving stable operation of the electron beam generating module 1123, and further achieving the electron beam source 1123a to maintain a stable on or off state. This avoids the problem of unstable and discontinuous electron beam direct writing during the refresh cycle of the emission control unit 111.

[0061] As an example, the electron beam generating module 1123 receives the conduction signal with an extended effective time, and emits the corresponding electron beam within the effective time of the conduction signal.

[0062] In this embodiment, the electron beam generating module 1123 includes a fifth transistor T5 and an electron beam source 1123a; the first end of the fifth transistor T5 receives the extended conduction signal, the second end is connected to the first working voltage VDD1, and the third end is connected to the first end of the electron beam source 1123a, and provides a switching control signal to the electron beam source 1123a within the effective time of the conduction signal; the second end of the electron beam source 1123a is connected to the second working voltage VDD2, and the third end outputs the electron beam.

[0063] In this embodiment, as shown in Figure 5, the first end of the electron beam source 1123a receives the switch control signal, the second end (cathode) is connected to the second operating voltage VDD2, and the third end (anode) outputs the electron beam. In this embodiment, the source of the electron beam source 1123a is connected to the second operating voltage VDD2, the gate is connected to the output end of the conduction signal generating module 112a, and the drain serves as the output end. In this embodiment, the source of the electron beam source 1123a serves as the cathode, and the drain of the electron beam source 1123a serves as the anode, ensuring that when the electron beam source 1123a is turned on, the electrons are charged with voltage and have a higher energy to transition, thereby emitting an electron beam. In this embodiment, the electron beam source 1123a that is not simultaneously gated by the first gating signal and the second gating signal remains in an off state. In another embodiment, the electron beam source 1123a that is not simultaneously gated by the first gating signal and the second gating signal maintains a stable electron beam emission intensity and continues to emit. The present invention introduces an emission control unit 111, which can achieve stable output of control signals and effectively improve the efficiency of electron beam utilization. When continuous direct writing is required, the electron beam can remain stably on, achieving an on-state duty cycle close to 100%, effectively improving the direct writing rate.

[0064] It should be noted that, in another example, the gate of the electron beam source 1123a can be connected to the second operating voltage VDD2, and the source receives the switch control signal, thereby achieving stable emission of the electron beam. In this embodiment, the potential of the second operating voltage VDD2 can be set to a common bias potential provided by a common electrode, or a special bias potential provided by a bias circuit. In this embodiment, the magnitude of the bias voltage can be adjusted based on the bias signal generating circuit 13 to regulate the beam current intensity of the emitted electron beam. In addition, each electron beam source emission unit 112 can also be provided with a beam control module (not shown in the figure) and loaded on the delayed conduction signal output by the conduction signal holding module 1122 to adjust the level state of the conduction signal, thereby further achieving regulation of the intensity of the emitted electron beam current. When the beam current intensity of a single electron beam source 1123a differs significantly from the beam current intensity of the electron beams emitted by other electron beam sources 1123a, the beam current control module can be adjusted to control the voltage received by the electron beam source 1123a, thereby regulating the beam current intensity of the emitted electron beam to bring it closer to the average value of the electron beam source array. Alternatively, when the electron beam current of electron beam source 1123a needs to be increased or decreased in a specific operating mode, the beam current control module can be used to adjust the beam current intensity of each electron beam individually.

[0065] At the same time, the anode in this embodiment can be partially prepared on the electron beam source 1123a, or it can be an independent component structure, or it can be composed of the anode structure on the electron beam source 1123a and an external independent anode structure component; based on this, the anode can be a single-layer structure or a composite layer structure, and different voltage intensities can be applied to each layer of the anode structure.

[0066] It should be further explained that the X electron beam source emission units 112 and the emission control unit 111 can be prepared on the same wafer substrate, or can be combined together later through 3D packaging integration, and the present embodiment is not limited thereto.

[0067] As an example, each electron beam source emission unit 112 also includes an auxiliary clamping module 1125; the auxiliary clamping module 1125 is arranged between the conduction signal holding module 1122 and the electron beam generating module 1123 to stabilize the voltage of the output signal of the conduction signal holding module 1122, thereby avoiding temperature drift and noise signal interference.

[0068] In this embodiment, the auxiliary clamping module includes a diode D, a fourth transistor T4, and a resistor R. The first end of the fourth transistor T4 is connected to the conduction signal holding module 1122, the second end is connected to the first operating voltage VDD1 via the resistor R, and the third end is connected to the electron beam generating module 1123. The cathode of the diode D is connected to the third end of the fourth transistor T3, and the anode is grounded. The voltage division by the resistor R and the unidirectional conductivity of the diode D ensure the voltage stability of the output signal of the conduction signal holding module 1122, thereby avoiding voltage instability caused by interference between the voltages of various nodes within the system, which could affect the resulting electron beam effect.

[0069] It should be noted that the auxiliary clamping module 1125 can also be set to other configurations, such as voltage clamping through multiple resistors arranged in series or clamping through other diodes. Any structural setting of the auxiliary clamping module 1125 that can control the final output voltage stably is within the protection scope of this embodiment.

[0070] Example 2

[0071] As shown in FIG6 to FIG8, this embodiment provides an electron beam writer 21, which is basically the same as the first embodiment, except that the number of gating signals of the emission control unit is different and the number of control terminals of each electron beam source emission unit 211 is different.

[0072] Specifically, as shown in Figure 6, when Y=4, the emission control unit also includes i third control lines and j fourth control lines; each third control line generates a third selection signal respectively; each fourth control line generates a fourth selection signal respectively; each electron beam source emission unit is connected to the third control line and the fourth control line respectively, and is turned on to emit the corresponding electron beam when it receives the corresponding first selection signal, the corresponding second selection signal, the corresponding third selection signal and the corresponding fourth selection signal at the same time.

[0073] As an example, as shown in Figure 6, in this embodiment, the emission control unit includes 1 first control line, 1 second control line, 1 third control line and 1 fourth control line (in this embodiment, as shown in Figure 6, they are the first control line i1, the second control line j1, the third control line i2 and the fourth control line j2 respectively).

[0074] In this embodiment, when there are multiple first control lines, second control lines, third control lines, and fourth control lines, the first control lines are parallel to each other, the second control lines are parallel to each other, the third control lines are parallel to the first control lines, and the fourth control lines are parallel to the second control lines. In this embodiment, for ease of arrangement, the angle between the first control lines and the second control lines is set to be a right angle.

[0075] Specifically, as shown in FIG6 and FIG7 , each electron beam source emitting unit 211 includes four control terminals for receiving corresponding gating signals respectively.

[0076] As an example, as shown in FIG. 7 , each electron beam source emitting unit 211 includes a conduction signal generating module 2111 , a conduction signal maintaining module 1122 , and an electron beam generating module 1123 .

[0077] In this embodiment, the conduction signal generating module 2111 includes a second transistor T2 and a third transistor T3; the first end and the second end of the second transistor T2 serve as the first control end and the second control end of the conduction signal generating module, respectively; the first end and the second end of the third transistor T3 serve as the third control end and the fourth control end of the conduction signal generating module 2111, respectively; the third end of the second transistor T2 and the third end of the third transistor T3 are connected and serve as the output end of the conduction signal generating module 2111, thereby outputting the conduction signal to the subsequent module.

[0078] It should be noted that in this embodiment, the second transistor T2 and the third transistor T3 can be configured as MOS transistors. In another embodiment, the second transistor T2 and the third transistor T3 can also be configured as BJT transistors or IGBT transistors. The actual connection method can be based on the actual device used and is not limited to this embodiment.

[0079] In this embodiment, the conduction signal holding module 1122 is set to a clamping structure, and its specific connection method is shown in Figure 7; in another embodiment, the conduction signal holding module is set to a capacitor 1124, as shown in Figure 8; the connection methods of the above two conduction signal holding modules are basically the same as those in Example 1, and will not be repeated here.

[0080] The electron beam generating module 1123 of this embodiment is substantially the same as that of the first embodiment, and will not be described in detail here.

[0081] Example 3

[0082] As shown in FIG1 , this embodiment provides an electron beam direct writing system 1 , comprising: a deflection circuit 12 and an electron beam direct writer 11 as in the first embodiment or an electron beam direct writer 21 as in the second embodiment.

[0083] Specifically, the deflection circuit 12 includes at least one group of electrodes; each electrode surrounds the emitted electron beam, and the movement path of the electron beam is regulated based on the voltage applied to each electrode.

[0084] As shown in FIG9 , the deflection circuit 12 includes at least a first deflection unit 121. The first deflection unit 121 includes a set of electrodes surrounding the emitted electron beam. By adjusting the bias voltage on each set of electrodes, the magnetic field generated by each set of electrodes is controlled. Each electron beam is deflected by the magnetic field generated by the first deflection unit 121.

[0085] As shown in FIG9 , the deflection circuit 12 further includes a second deflection unit 122. The second deflection unit 122 includes a set of electrodes arranged around the emitted electron beam. After passing through the first deflection unit 121, the electron beam is deflected again by the magnetic field generated by the second deflection unit 122, thereby reaching a predetermined position.

[0086] It should be noted that the first deflection unit 121 can be used to significantly deflect the path of the electron beam, and the second deflection unit 122 is used to slightly deflect the path of the electron beam, thereby more accurately controlling the position at which the electron beam reaches. In this embodiment, the emitted electron beam ultimately reaches the wafer processing layer 01 disposed on the upper surface of the machine 00. The wafer processing layer 01 can be configured as a pattern processing mask layer or a wafer substrate. In this embodiment, by adjusting the voltage on each electrode in the first deflection unit 121 and the second deflection unit 122, the electron beam emitted by each electron beam source 1123a is controlled to reach a preset position on the machine 00, thereby controlling pattern direct writing.

[0087] It should be further explained that the first deflection unit 121 and / or the second deflection unit 122 may also be configured as a magnetic coil, which is disposed at the periphery of the movement path of the electron beam and can effectively adjust the deflection position of the electron beam through a voltage signal.

[0088] In this embodiment, a shielding structure 123 is further disposed between the first deflection unit 121 and the second deflection unit 123. The shielding structure 123 is a shielding plate with a gap, and the gap is set at a predetermined path position after the electron beam passes through the first deflection unit 121. The shielding plate is used to shield excess electron beams and electron beams that do not follow the predetermined path, thereby controlling the number and movement angle of the electron beams entering the second deflection unit 123.

[0089] As an example, as shown in FIG1 , the electron beam direct writing system 1 further includes a bias signal generating circuit 13 . The bias signal generating circuit 13 is connected to each electron beam source emitting unit 112 and the emission control unit 111 . Based on the emission control unit 111 , the bias signal generating circuit 13 selects and turns on the corresponding electron beam source emitting unit 112 to emit an electron beam, and adjusts the bias voltage in the electron beam source emitting unit 112 to control the beam current intensity of the emitted electron beam. In this embodiment, both the first operating voltage VDD1 and the second operating voltage VDD2 can be generated and output by the bias signal generating circuit 13 .

[0090] In this embodiment, the electron beam direct writing system 1 further includes an adjustment unit; the adjustment unit is connected to the bias signal generating circuit 12 and is used to generate a control signal to adjust the voltage output by the bias signal generating circuit 12 .

[0091] The present embodiment performs gating control through the emission control unit 111, and divides the emission control unit 111 into two types of control lines, thereby reducing the connection density and wiring difficulty of each electron beam source emission unit 111, and also reducing the computing power requirements of the adjustment unit (such as: computer control terminal), making it easier to implement in equipment manufacturing. At the same time, the present embodiment configures an independent control circuit for each electron beam source 1123a, which can enable the electron beam source 1123a to maintain a stable working state and achieve high-efficiency direct writing. In addition, the present embodiment delays the effective time of the conduction signal by providing a conduction signal holding module 1122, thereby ensuring that when the conduction signal generating module 1121 turns off the output conduction signal, the electron beam generating module 1123 can still maintain a stable voltage to send a signal, avoiding the discontinuity of the direct writing process due to the intermittent signal switching between the emission control unit 111 and the rapid response of the electron beam generating module 1123 to the signal change state of the emission control unit 111.

[0092] In summary, the present invention provides an electron beam direct writer and an electron beam direct writing system, comprising: an emission control unit and X electron beam source emission units; X is an integer greater than or equal to 1; the emission control unit is used to generate Y types of gating signals, and Y is an integer greater than or equal to 2; each electron beam source emission unit includes a conduction signal generating module, a conduction signal holding module, and an electron beam generating module; the Y control terminals of the conduction signal generating module are set in a one-to-one correspondence with the Y types of gating signals; the conduction signal generating module is used to generate a conduction signal when receiving the corresponding gating signal at the same time; the conduction signal holding module receives the gating signal and is used to extend the effective time of the conduction signal; the electron beam generating module receives the conduction signal with the extended effective time and emits the corresponding electron beam within the effective time of the conduction signal. The present invention is used to solve the problem of slow direct writing speed due to the reaction time of the electron beam source in responding to the control instruction during the electron beam direct writing process. Therefore, the present invention effectively overcomes the various shortcomings in the prior art and has high industrial utilization value.

[0093] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone skilled in the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by one of ordinary skill in the art without departing from the spirit and technical principles disclosed herein are intended to be covered by the claims of the present invention.

Claims

1. An electron beam writer, characterized in that: The electron beam direct writer comprises: an emission control unit and X electron beam source emission units; X is an integer greater than or equal to 1; The transmission control unit is used to generate Y types of gating signals, where Y is an integer greater than or equal to 2; Each electron beam source emission unit is connected to the emission control unit respectively; wherein any electron beam source emission unit among the electron beam source emission units is turned on when receiving Y kinds of gating signals at the same time, thereby emitting a corresponding electron beam; Among them, each electron beam source emission unit includes a conduction signal generating module, a conduction signal holding module and an electron beam generating module; the Y control terminals of the conduction signal generating module are set in one-to-one correspondence with Y types of selection signals; the conduction signal generating module is used to generate a conduction signal when receiving corresponding selection signals at the same time; the conduction signal holding module receives the conduction signal and is used to extend the effective time of the conduction signal; the electron beam generating module receives the conduction signal with extended effective time, and emits the corresponding electron beam within the effective time of the conduction signal.

2. The electron beam writer according to claim 1, characterized in that: When Y=2, the emission control unit 111 includes i first control lines and j second control lines; i and j are integers greater than or equal to 1 and i×j≥X; the first control lines are cross-arranged with the second control lines, and each first control line generates a first selection signal respectively, and each second control line generates a second selection signal respectively; the first control end of each electron beam source emission unit is respectively connected to the corresponding first control line, and the second control end is respectively connected to the corresponding second control line, and the conduction signal is output when the corresponding first selection signal and the corresponding second selection signal are received at the same time.

3. The electron beam writer according to claim 2, characterized in that: The conduction signal generating module includes a first transistor; The first end and the second end of the first transistor respectively serve as the first control end and the second control end of the conduction signal generating module, and output the conduction signal based on the first selection signal and the second selection signal received simultaneously.

4. The electron beam writer according to claim 2, characterized in that: When Y=4, the emission control unit 111 also includes i third control lines and j fourth control lines; each third control line generates a third selection signal respectively; each fourth control line generates a fourth selection signal respectively; each electron beam source emission unit is connected to the third control line and the fourth control line respectively, and outputs the conduction signal when it receives the corresponding first selection signal, the corresponding second selection signal, the corresponding third selection signal and the corresponding fourth selection signal at the same time.

5. The electron beam writer according to claim 4, characterized in that: The conduction signal generating module includes a second transistor and a third transistor; The first end and the second end of the second transistor serve as the first control end and the second control end of the conduction signal generating module respectively; The first end and the second end of the third transistor serve as the third control end and the fourth control end of the conduction signal generating module respectively; the third end of the second transistor and the third end of the third transistor are connected and output the conduction signal.

6. The electron beam writer according to claim 1, characterized in that: Each electron beam source emission unit 112 further includes an auxiliary clamping module; the auxiliary clamping module is disposed between the conduction signal holding module and the electron beam generating module to stabilize the voltage of the output signal of the conduction signal holding module.

7. The electron beam writer according to claim 6, characterized in that: The auxiliary clamping module includes a diode, a fourth transistor and a resistor; The first end of the fourth transistor is connected to the conduction signal holding module, the second end is connected to the first working voltage via a resistor, and the third end is connected to the electron beam generating module; The cathode of the diode is connected to the third terminal of the fourth transistor, and the anode of the diode is grounded.

8. The electron beam writer according to claims 1 to 7, characterized in that: The electron beam generating module comprises a fifth transistor and an electron beam source; The first end of the fifth transistor receives the extended conduction signal, the second end is connected to the first working voltage, and provides a switch control signal to the electron beam source within the effective time of the conduction signal; The first end of the electron beam source receives the switch control signal, the second end is connected to a second working voltage, and the third end outputs the electron beam.

9. The electron beam writer according to claim 8, characterized in that: The conduction signal holding module is configured as a clamp structure; a first end of the clamp structure receives the conduction signal, and a second end is connected to a first end of the fifth transistor.

10. The electron beam writer according to claim 9, characterized in that: The clamping structure is configured as an SRAM memory.

11. The electron beam writer according to claim 8, characterized in that: The conduction signal holding module is configured as a capacitor; a first plate of the capacitor receives the conduction signal, and a second plate of the capacitor is connected to a third end of the fifth transistor.

12. An electron beam direct writing system, characterized in that: The electron beam direct writing system comprises a deflection circuit and an electron beam direct writer according to any one of claims 1 to 11; The deflection circuit includes at least one group of electrodes; each electrode is arranged around the emitted electron beam, and the movement path of the electron beam is regulated based on the voltage loaded on each electrode.

13. The electron beam direct writing system according to claim 12, characterized in that: The electron beam direct writing system also includes a bias signal generating circuit; The bias signal generating circuit is respectively connected to each electron beam source emission unit and the emission control unit, and selects and turns on the corresponding electron beam source emission unit based on the emission control unit to emit an electron beam, and adjusts the bias voltage in the electron beam source emission unit to control the beam current intensity of the emitted electron beam.

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