Method for producing an optoelectronic component and optoelectronic component

Abstract

A Method for producing an optoelectronic component (1) is described. The method comprises providing a carrier (2) comprising a base body (21), a conductor track (22), and a non-conductive layer (23), wherein the conductor track (22) is covered with the non-conductive layer (23) at least at parts of the conductor track (22), and selective heating of the conductor track (22) such that the non-conductive layer (23) is partially removed and a part of the conductor track (22) is exposed. Furthermore, an optoelectronic component is specified. In particular, the optoelectronic component comprises a micro-LED.

Description

[0001] Description

[0002] METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT

[0003] A method for producing an optoelectronic component and an optoelectronic component are speci fied .

[0004] It is an obj ect to provide a simple and ef ficient method for producing an optoelectronic component . Furthermore , an optoelectronic component with an increased ef ficiency shall be provided .

[0005] According to at least one embodiment of the method, the method is for producing an optoelectronic component . In other words , an optoelectronic component can be produced as a result of the method . In particular, the optoelectronic component is designed or configured to emit or detect electromagnetic radiation . The optoelectronic component is , for example , used in automotive illumination or display applications .

[0006] According to at least one embodiment of the method, a carrier is provided . The carrier provides , for example , mechanical stability to the optoelectronic component . Furthermore , the carrier can be supplied with an electric current . In other words , the carrier can serve as electrical supplier for devices arranged thereon .

[0007] According to at least one embodiment of the method, the carrier comprises a base body, a conductor track, and a non- conductive layer . In particular, the base body is transparent to electromagnetic radiation . The base body is , for example , formed as a rigid sheet or a flexible film .

[0008] The conductor track is , for example , arranged on the base body . The conductor track is , in particular, in direct mechanical contact with the base body . The conductor track can be an electrically conductive structure comprising, for example , an electrically conductive material such as a metal . It is possible that the conductor track serves to distribute the electric current over the carrier . Additionally or alternatively, the conductor track may serve as a contact point on which a device is , for example , mechanically and electrically mounted .

[0009] The conductor track comprises , in particular, a bottom face which faces towards the base body, a top face which faces away from the base body, and a side face which connects the bottom face and the top face . The bottom face of the conductor track is , for example , in direct contact with the base body .

[0010] In particular, the non-conductive layer comprises a material which is a diamagnetic isolator . In other words , the non- conductive layer is electrically non-conductive . The non- conductive layer can be non-reflecting . For example , the non- conductive layer comprises a compound of the metal of the conductor track .

[0011] According to at least one embodiment of the method, the conductor track is covered with the non-conductive layer at least at parts of the conductor track . In particular, the non-conductive layer is in direct mechanical contact with the conductor track . The conductor track is , for example , covered with the non-conductive layer at least on the top face . Furthermore , it is possible that the side face of the conductor track is also at least partially covered with the non-conductive layer . The bottom face remains , in particular, free of the non-conductive layer . It is however also possible , that the bottom face of the conductor track is covered with the non-conductive layer .

[0012] According to at least one embodiment of the method, the conductor track is selectively heated . In this way, the non- conductive layer is partially removed and a part of the conductor track is exposed . Thus , after the selective heating, the conductor track can be used for electrical conductively mounting a device as an optoelectronic semiconductor chip . Furthermore , advantageously, the removal of the non-conductive layer improves a wettability with an interconnect material for the mounting of the device such .

[0013] The selective heating may be performed by selectively providing energy to the conductor track . It is possible that the non-conductive layer is removed by evaporating or decomposing a material of the non-conductive layer .

[0014] According to at least one embodiment , the method for producing an optoelectronic component comprises providing the carrier comprising the base body, the conductor rack, and the non-conductive layer, wherein the conductor track is covered with the non-conductive layer at least at parts of the conductor track, and selective heating of the conductor track such that the non-conductive layer is partially removed and a part of the conductor track is exposed . The selective heating of the conductor tracks is advantageously a simple and ef ficient method to remove the non-conductive layer from the conductor tracks . Due to the selective heating other elements of the carrier such as the base body advantageously remain intact . Furthermore , no special material such as suitable flux systems may be needed to remove the non-conductive layer . This of fers the opportunity to provide more reliable j oints from the conductor track to devices .

[0015] Furthermore , due to the selective heating of the conductor track the base body can be partially melted in a region where the base body is in direct mechanical contact with the conductor track . The heated conductor track can then sink partially into the base body . In other words , the conductor track is then partially embedded in the base body . Thus , the selective heating may improve an adhesion between the conductor track and the base body . This can advantageously lead to a more reliable optoelectronic component .

[0016] According to at least one embodiment of the method, selective heating is performed using pulsed electromagnetic radiation . Advantageously, the pulsed electromagnetic radiation is a simple and ef ficient method to heat the conductor track to such a temperature that the non-conductive layer is removed . Furthermore , a high energy density of the pulsed electromagnetic radiation can promote the removal of the non- conductive layer . Thus , it is not necessary to perform the removal of the non-conductive layer in an oxygen- free environment .

[0017] In particular, the base body is transparent for the pulsed electromagnetic radiation . Thus , it is advantageously ensured that mainly the conductor track is heated . The base body can then remain unharmed . The conductor track however can absorb the energy of the pulsed electromagnetic radiation and is thus heated .

[0018] In particular, the pulsed electromagnetic radiation is provided by a high energy flash lamp, such as a Xe flash lamp, or a laser . For example , the laser emits electromagnetic radiation in the wavelength range between and including 500 nanometers and 1100 nanometers .

[0019] According to at least one embodiment of the method, a mask is used during selective heating . In particular, the mask is only partially transmissive for the pulsed electromagnetic radiation . During selective heating, the mask is arranged in a distance to the carrier . For example , the mask comprises a high transmittance for the pulsed electromagnetic radiation in regions where the non-conductive layer is removed . In particular, the mask covers the carrier at least partially .

[0020] I f the laser is used for providing the pulsed electromagnetic radiation, the use of a mask may be omitted .

[0021] According to an embodiment of the method, the mask completely covers the carrier . In other words , the mask is free of openings . In particular, the mask comprises di f ferent transmissivities for the pulsed electromagnetic radiation . For example , the mask has di f ferent absorption coef ficients for the pulsed electromagnetic radiation . Thus , the energy reaching the carrier can advantageously be determined by the transmissivity of the mask . The di f ferent transmissivities or di f ferent absorption coef ficients are , in particular, dependent on the composition of the underlying carrier . For example , the transmissivity of the mask is high in the regions of the conductor track, whereas it is low in regions wherein the base body is free of the conductor track . In particular, the transmissivity of the mask is higher in the regions of the conductor track than in the regions wherein the base body is free of the conductor track . The highest transmissivity is for instance reached in the regions where the non-conductive layer is removed .

[0022] For example , the mask comprises a glass . In particular, the transmissivity of the mask is then determined by the thickness of the glass . Alternatively, the transmissivity of the mask may be dependent on its composition .

[0023] According to at least one embodiment of the method, the mask covers the carrier in such a way that a part of the conductor track remains free of the mask . In the regions free of the mask, the non-conductive layer is removed from the conductor track . In other words , the mask comprises openings in the regions of the conductor track where the non-conductive layer is removed . The mask may be a shadow mask . For example , the mask comprises an opaque material such as a metal . The metal is , for instance , Ni .

[0024] According to at least one embodiment of the method, a material of the non-conductive layer is decomposed during selective heating . Advantageously, the non-conductive layer is thus removed without leaving a non-conducting material . For example , the conductor track comprises or consists of Cu and the non-conductive layer comprises or consists of copper ( I ) nitride ( CuaN) . In this case , the CU3N disintegrates due to the heating to copper and nitrogen gas ( Cu and N2) . This process may not only be induced by the selective heating by the pulsed electromagnetic radiation but also by the presence of the pulsed electromagnetic radiation itsel f .

[0025] According to at least one embodiment of the method, the conductor track is heated to a temperature of between and including 400 ° C and 450 ° C during selective heating . Advantageously, in combination with the high energy density of the pulsed electromagnetic radiation such a temperature is suf ficient to remove the non-conducive layer .

[0026] According to at least one embodiment , the method further comprises arranging an optoelectronic semiconductor chip on the carrier such that it is electrically contactable via the conductor track . In particular, the optoelectronic semiconductor chip is arranged on the part of the conductor track which is exposed after the selective heating . That is , the optoelectronic semiconductor chip is arranged on a region of the top face of the conductor track which is free of the non-conductive layer .

[0027] According to at least one embodiment of the method, the optoelectronic semiconductor chip is arranged on the carrier by laser induced forward trans fer ( LI FT ) . Alternatively, the optoelectronic semiconductor chip can be arranged on the carrier with a pick and place process . During LI FT , the optoelectronic semiconductor chip is trans ferred from a substrate comprising a plurality of optoelectronic semiconductor chip to the carrier by means of electromagnetic radiation provided by a laser . LI FT is a simple and ef ficient method for arranging the optoelectronic semiconductor chip on the carrier . In particular, it is also possible to precisely position the optoelectronic semiconductor chip with this method .

[0028] According to at least one embodiment of the method, a tacky material is applied on the carrier before arranging the optoelectronic semiconductor chip on the carrier . In particular, the tacky material serves to capture the optoelectronic semiconductor chip during LI FT . The tacky material may be applied by screen printing, stencil printing or a LI FT process . The tacky material is , for example , a tacky flux or a tacky medium without flux properties . The tacky medium without flux properties is , for instance , glycerin . A tacky flux comprises , for example , an acid such as an organic acid .

[0029] In particular, the tacky material is partially removed during positive substance j ointing . Remaining traces of the tacky material can be removed in a separate step using a solvent .

[0030] According to at least one embodiment of the method, the optoelectronic semiconductor chip is arranged on the carrier by trans ferring from a wafer sheet using a stamp . The stamp is , for example , designed or configured as waveguide for electromagnetic radiation .

[0031] According to at least one embodiment , the method further comprises positive substance j ointing of the optoelectronic semiconductor chip and the conductor track with an interconnect material . For example , the interconnect material is a solder . The interconnect material is , in particular, provided on the optoelectronic semiconductor chip before arranging on the carrier . Alternatively, the interconnect material is provided on the carrier . The interconnect material may comprise tacky properties . However, it is also possible that a tacky flux is applied on the interconnect material on the carrier, for example by LI FT . Advantageously, the positive substance j ointing electrically and mechanically connects the optoelectronic semiconductor chip and the conductor track via the interconnect material .

[0032] According to at least one embodiment of the method, positive substance j ointing is performed using pulsed electromagnetic radiation . Advantageously, only the components to be j ointed are heated by the pulsed electromagnetic radiation . Thus , a damage of the other components of the optoelectronic component is prevented . The pulsed electromagnetic radiation is , for example , provided via the stamp, via a laser, or via a high energy flash lamp such as a Xe flash lamp . I f the pulsed electromagnetic radiation is provided via the stamp, a tilting of the optoelectronic semiconductor chip is advantageously prevented during positive substance j ointing .

[0033] According to at least one embodiment of the method, positive substance j ointing is performed under a reducing atmosphere . In this way, advantageously the formation of oxides is prevented and / or oxides already present on the optoelectronic semiconductor chip, the interconnect material and / or the conductor track are reduced . Thus , the use of a flux is not necessary . The reducing atmosphere is , for example , established by forming gas and / or formic acid .

[0034] According to at least one embodiment of the method, an exposure time of the pulsed electromagnetic radiation during the selective heating and / or during the positive substance j ointing is in the millisecond region . In this way, an overheating of the conductor track is advantageously prevented .

[0035] According to at least one embodiment of the method, selective heating of the conductor tracks to remove the non-conductive layer and positive substance j ointing both performed by pulsed electromagnetic radiation are performed in the same equipment .

[0036] Furthermore , an optoelectronic component is speci fied . In particular, the optoelectronic component is produced by the method described herein . Thus , embodiments , features , and advantages described in combination with the method for producing an optoelectronic component also apply to the optoelectronic component and vice versa . The optoelectronic component is , for example , a translucent or transparent display .

[0037] According to at least one embodiment , the optoelectronic component comprises a carrier with a base body and a conductor track . In particular, the conductor track is arranged in direct mechanical contact to the base body . For example , the optoelectronic component comprises a plurality of conductor tracks .

[0038] According to at least one embodiment , the optoelectronic component comprises an optoelectronic semiconductor chip . In particular, the optoelectronic semiconductor chip is designed or configured to emit or to detect electromagnetic radiation . Thus , also the optoelectronic component is designed or configured to emit or to detect electromagnetic radiation . For example , the optoelectronic semiconductor chip is a light emitting diode ( LED) , in particular a mini-LED or micro-LED . According to at least one embodiment of the optoelectronic component , the base body is transparent . In particular, the base body is transparent for the electromagnetic radiation emitted by the optoelectronic semiconductor chip . For example , the base body is transparent for visible electromagnetic radiation .

[0039] According to at least one embodiment of the optoelectronic component , the conductor track is partially embedded in the base body . In particular, a bottom face of the conductor track is completely covered with the base body, whereas a side face is only partially covered with the base body . For example , at least 30% of the side face is covered with the base body . A top face of the conductor track is free of the base body .

[0040] According to at least one embodiment of the optoelectronic component , a part of the conductor track is covered with a non-conductive layer . The non-conductive layer is , for example , opaque and / or non-reflecting . Thus , the non- conductive layer advantageously reduces light reflection on the conductor track .

[0041] According to at least one embodiment of the optoelectronic component , the optoelectronic semiconductor chip is electrically contactable via the conductor track . In particular, the optoelectronic semiconductor chip and the conductor track are electrically conductively connected, for example via an interconnect material .

[0042] According to at least one embodiment , the optoelectronic component comprises the carrier with the base body and the conductor track and the optoelectronic semiconductor chip, wherein the base body is transparent , the conductor track is partially embedded in the base body, the part of the conductor track is covered with a non-conductive layer, and the optoelectronic semiconductor chip is electrically contactable via the conductor track .

[0043] According to at least one embodiment of the optoelectronic component , the conductor track comprises or consists of a metal .

[0044] According to at least one embodiment of the optoelectronic component , the non-conductive layer comprises or consists of a compound of the metal . The compound of the metal , for instance , comprises a cation of the metal . In particular, the non-conductive layer comprises or consists of a nitride of the metal of the conductor track . Advantageously, nitrides can be ef ficiently removed due to their tendency to decomposition to the metal and nitrogen gas .

[0045] According to at least one embodiment of the optoelectronic component , the conductor track comprises or consists of Cu . Cu comprises advantageously a high electrical and thermal conductivity .

[0046] According to at least one embodiment of the optoelectronic component , the non-conductive layer comprises or consists of CuaN . CU3N is advantageously a diamagnetic isolator and nonreflecting .

[0047] According to at least one embodiment of the optoelectronic component , the base body comprises or consists of a plastic . In particular, the plastic comprises or consists of a polymer selected from the group consisting of polyethylene terephthalate ( PET ) , polyethylene naphthalate ( PEN) , polyimide ( PI ) , colorless polyimide , and combinations thereof . Advantageously, such plastics shows a low absorption of visible electromagnetic radiation . Thus , the base body is not or only to a very small extend heated during selective heating of the conductor track with pulsed electromagnetic radiation .

[0048] According to at least one embodiment of the optoelectronic component , the optoelectronic semiconductor chip and the conductor track are connected via an interconnect material . The interconnect material is , for example , a solder . In particular, the interconnect material is selected from the group consisting of Sn, SnAg, SnAgCu, SnBi , AuSn, and combinations thereof . In other words , the interconnect material comprises , for instance , a metal or a metal alloy .

[0049] According to an embodiment of the optoelectronic component , the optoelectronic semiconductor chip comprises or is a micro-LED . Here and in the following LED is the abbreviation for light emitting diode . It is also possible that the optoelectronic semiconductor chip comprises or is a mini-LED .

[0050] As a broad definition, a micro-LED could be seen as any light emitting diode ( LED) with a particularly small si ze . MicroLEDs may comprise a width, a length, a thickness and / or a diameter smaller than or equal to 100 micrometers , in particular, smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . In particular, micro-LEDs , for example rectangular micro-LEDs , have an edge length, in particular in plan view of the layers of the semiconductor layer sequence , of a luminous surface smaller than or equal to 70 micrometers , for example smaller than or equal to 50 micrometers . For example , a micro-LED is a light emitting diode with a growth substrate removed, such that a thickness of the micro-LED is in the range between and including, for example , 1 . 5 micrometers and 10 micrometers . For example , the micro-LED is provided on a wafer having releasable retaining structures . The micro-LED can be detached from the wafer in a non-destructive manner . In contrast , the growth substrate may still adhere to the miniLEDs , resulting in a thickness of approximately between and including 50 micrometers and 100 micrometers .

[0051] In particular, micro-LEDs are mainly used in displays . The micro-LEDs form pixels or subpixels and emit light of a defined color . Small pixel si ze and a high density with close distances make micro-LEDs suitable , among others , for small monolithic displays for augmented reality applications , especially data glasses . In addition, other applications are being developed, in particular regarding the use in data communication or pixelated lighting applications .

[0052] Advantageous embodiments and developments of the structure , the method for producing the structure , and the light emitting component will become apparent from the exemplary embodiments described below in conj unction with the figures .

[0053] In the figures :

[0054] Figures 1 to 3 show schematic sectional views of steps of a method for producing an optoelectronic component according to an exemplary embodiment . Figures 4 to 6 show schematic sectional views of steps of a method for producing an optoelectronic component according to an exemplary embodiment .

[0055] Figures 7 and 8 show schematic sectional views of steps of a method for producing an optoelectronic component according to an exemplary embodiment .

[0056] Figure 9 shows a schematic sectional view of an optoelectronic component according to an exemplary embodiment .

[0057] In the exemplary embodiments and figures , similar or similarly acting constituent parts are provided with the same reference signs . The elements illustrated in the figures and their si ze relationships among one another should not be regarded as true to scale . Rather, individual elements may be represented with an exaggerated si ze for the sake of better representability and / or for the sake of better understanding .

[0058] In an exemplary embodiment of a method for producing an optoelectronic component 1 a carrier 2 is provided as shown in figure 1 . The carrier 2 presently comprises a base body 21 , a conductor track 22 , and a non-conductive layer 23 . The conductor track 22 is arranged between the base body 21 and the non-conductive layer 23 . In other words , the non- conductive layer 23 covers the conductor track 22 . The conductor track 22 is in direct mechanical contact with the non-conductive layer 23 and the base body 21 . The base body 21 comprises or consists of PET , the conductor track 22 comprises or consists of Cu, and the non-conductive layer comprises or consists of CuaN . The base body 21 is transparent for electromagnetic radiation in the visible region and is formed as a flexible film .

[0059] The carrier 2 is presently arranged on a substrate 10 by means of an adhesive layer 11 . The substrate 10 is rigid . The substrate 10 comprises or consists of glass , plastic and / or a metal . The adhesive layer 11 and the substrate 10 are transparent for electromagnetic radiation in the visible region . The substrate 10 can mechanically stabili ze the carrier 2 .

[0060] In a further method step shown in figure 2 , a mask 4 is arranged in a distance to the carrier 2 . Presently, the mask 4 comprises a metal such as Ni . The mask 4 has an opening 41 , in particular a plurality of openings 41 , through which electromagnetic radiation 3 can reach the carrier 2 . Alternatively, it is possible that the mask 4 has di f ferent transmissivities dependent on a position above the carrier 2 . The opening 41 is above a part of the conductor track 22 .

[0061] Pulsed electromagnetic radiation 3 is provided by a Xe flash lamp 12 and reaches the carrier 2 in the regions which are not covered with the mask 4 , that is in the region of the opening 41 . In particular, the Xe flash lamp 12 provides a high energy light pulse . The base body 21 , the substrate 10 , and the adhesive layer 11 show no or only poor absorption of the energy of the pulsed electromagnetic radiation 3 . In contrast , the non-conductive layer 23 and the conductor track 22 shows a high absorption of the energy of the pulsed electromagnetic radiation 3 . Thus , the conductor track 22 is selectively heated, for example to a temperature of at least 480 ° C . Such a temperature is suf ficient that the non- conductive layer 23 is removed . Presently, the CuaN of the non-conductive layer 23 decomposes to Cu and nitrogen gas .

[0062] The conductor track 22 is exposed in the region where the non-conductive layer 23 is removed . In other words , only a part of the conductor track 22 is exposed . The exposed region of the conductor track 22 corresponds to the opening 41 in the mask 4 . The carrier 2 with the partially exposed conductor track 22 is shown in figure 3 .

[0063] As an alternative to the Xe flash lamp 12 in combination with the mask 4 , a laser may be used to selectively irradiate and thus selectively heat conductor track 22 to remove the non- conductive layer 23 .

[0064] Due to the heating of the conductor track 22 it is possible that the conductor track 22 is partially embedded in the base body 21 . Thus , a side face of the conductor track 22 is partially covered with the base body 21 . The heated conductor track 22 at least partially melts the base body 21 in direct mechanical contact with the conductor track 22 . The conductor track 22 partially sinks into the at least partially melted base body 21 such that the conductor track 22 is partially embedded in the base body 21 . A heat trans fer from the conductor track 22 to the base body 21 occurs in a region less than 10 micrometers away from the conductor track 22 . Thus , only in the region less than 10 micrometers away from the conductor track 22 the base body 21 is partially melted .

[0065] Figures 4 to 6 show another exemplary embodiment of a method for producing an optoelectronic component 1 . A carrier 2 with a base body 21 , a conductor track 22 , and a non-conductive layer 23 is provided . The conductor track 22 is covered on its top face with the non-conductive layer 23 . A bottom face of the conductor track 22 is in direct mechanical contact with the base body 21 . The conductor track

[0066] 22 is selectively heated by pulsed electromagnetic radiation 3 . This is achieved by using a mask 4 which presently has di f ferent transmissivities . A window 42 is highly transmissive for the pulsed electromagnetic radiation 3 , whereas the remaining mask 4 has a lower transmissivity for the pulsed electromagnetic radiation 3 . Thus , the conductor track 22 beneath the window 42 is selectively heated by means of the pulsed electromagnetic radiation 3 . As a result of the selective heating, the non-conductive layer 23 is removed and a part of the conductor track 22 is exposed . This process is shown in figure 4 .

[0067] In a further method step, an optoelectronic semiconductor chip 5 is applied on the carrier 2 as shown in figure 5 . The cross section of figure 5 is shown in a di f ferent sectional view compared to figure 4 such that the non-conductive layer

[0068] 23 is no longer visible .

[0069] The optoelectronic semiconductor chip 5 is arranged on the conductor track 22 which is free of the non-conductive layer 23 . In this way, an electrical contact between the conductor track 22 and the optoelectronic semiconductor chip 5 can be established . Presently, the optoelectronic semiconductor chip 5 is provided with an interconnect material 7 before it is applied on the carrier 2 . The optoelectronic semiconductor chip 5 is provided on a wafer sheet 8 . The wafer sheet 8 , for example , comprises a plurality of the optoelectronic semiconductor chips 5 . The optoelectronic semiconductor chip 5 is trans ferred from the wafer sheet 8 by means of a stamp

[0070] 9 .

[0071] The stamp 9 is a crystal which can act as a laser waveguide . This ability of the stamp 9 is utili zed during positive substance j ointing of the conductor track 22 and the optoelectronic semiconductor chip 5 . During the positive substance j ointing pulsed electromagnetic radiation 3 is applied to the optoelectronic semiconductor chip 5 through the stamp 9 such that the interconnect material 7 is at least partially melted . After a solidi fication of the interconnect material 7 , the conductor track 22 and the optoelectronic semiconductor chip 5 are mechanically and electrically connected via the interconnect material . The interconnect material 7 is , for example , a solder such as Sn, SnAg, SnAgCu, SnBi , AuSn, and combinations thereof .

[0072] It is possible to perform the positive substance j ointing under a reducing atmosphere . In this way, a more reliable connection of the optoelectronic semiconductor chip 5 and the conductor track 22 can be achieved . Furthermore , advantageously the use of a flux can be omitted .

[0073] The optoelectronic component 1 produced after the positive substance j ointing is shown in figure 6 . The optoelectronic component 1 comprises the carrier 2 with the base body 21 , the conductor track 22 , and the non-conductive layer 23 . The base body 21 comprises PET , the conductor track 22 Cu, and the non-conductive layer 23 CU3N . The optoelectronic semiconductor chip 5 is arranged on the conductor track 22 at the part of the conductor track 22 which is exposed, that is where a top face of the conductor track 22 is free of the non-conductive layer 23 . The conductor track 22 and the optoelectronic semiconductor chip 5 are electrically and mechanically connected via the interconnect material 7 .

[0074] A further exemplary embodiment of a method for producing an optoelectronic component 1 is described in figures 7 and 8 . At first a non-conductive layer 23 is removed from a conductor track 22 on a base body 21 of a carrier 2 as described in combination with figures 1 to 3 or figure 4 .

[0075] Then a tacky material 6 is applied on the carrier 2 , in particular at least on the part of the conductor track 22 which is exposed . The tacky material 6 is , for example , a tacky flux . The tacky material 6 is applied by screen printing or LI FT . After the tacky material 6 is applied on the carrier 2 , an optoelectronic semiconductor chip 5 is applied on the carrier 2 by LI FT . The optoelectronic semiconductor chip 5 comprises an interconnect material 7 such as a solder for a mechanical and electrical connection to the conductor track 22 .

[0076] Alternatively, as tacky material 6 a tacky solder paste or a solder paste followed by a tacky flux are applied on the carrier 2 on the part of the conductor track 22 which is exposed . The tacky material 6 can be applied by screen printing or LI FT . The tacky material 6 is followed by the optoelectronic semiconductor chip 5 which is applied by LI FT or a pick and place process . I f the tacky material 6 is the tacky solder paste or the solder paste followed by the tacky flux, it is not necessary that the optoelectronic semiconductor chip 5 comprises the interconnect material 7 . The interconnect material 7 is already provided by the tacky solder paste or the solder paste . As shown in figure 8 , positive substance j ointing between the conductor track 22 and the optoelectronic semiconductor chip 5 is performed . The positive substance j ointing is presently performed by means of pulsed electromagnetic radiation 3 which is applied through a mask 4 . The mask 4 comprises an opening 41 or a window 42 which is at least partially permeable for the pulsed electromagnetic radiation 3 . The opening 41 or the window 42 is in a region where the optoelectronic semiconductor chip 5 is arranged on the carrier 2 . The pulsed electromagnetic radiation 3 provides the energy necessary to perform the positive substance j ointing . In this way, the optoelectronic semiconductor chip 5 and the conductor track 22 are electrically and mechanically connected via the interconnect material 7 . The interconnect material 7 arises , for example , from the tacky solder paste or the solder paste or was provided on the optoelectronic semiconductor chip 5 as previously described . Due to the use of the mask 4 and the pulsed electromagnetic radiation 3 , energy is only provided where it is necessary to perform the positive substance j ointing . Thus , a damage of the base body 21 of the carrier 2 can be prevented .

[0077] Optionally, the tacky material 6 is removed after the positive substance j ointing such that the optoelectronic component 1 shown in figure 6 is produced .

[0078] Figure 9 shows an optoelectronic component 1 according to an exemplary embodiment . The optoelectronic component 1 comprises a carrier 2 and an optoelectronic semiconductor chip 5 . The carrier 2 presently comprises a base body 21 , a conductor track 22 and a non-conductive layer 23 . The non- conductive layer 23 is arranged on places of a top face of the conductor track 22 which faces away from the base body 21 . In other words , a part of the conductor track 22 is covered by the non-conductive layer 23 .

[0079] The optoelectronic semiconductor chip 5 is electrically and mechanically connected to the conductor track 22 via an interconnect material 7 . The interconnect material 7 and the conductor track 22 are in direct mechanical contact . Thus , the optoelectronic semiconductor chip 5 is electrically contactable via the conductor track 22 . The optoelectronic semiconductor chip 5 is arranged on a part of the conductor track 22 which is free of the non-conductive layer 23 .

[0080] The conductor track 22 comprises a top face facing away from the base body 21 , a bottom face in direct mechanical contact with the base body 21 , and a side face which connects the top face and the bottom face . The conductor track 22 is partially embedded in the base body 21 . That is , the bottom face and at least a part of the side face , for example at least 30% of the side face , are covered with the base body 21 .

[0081] The base body 21 presently comprises or consists of PET . The conductor track 22 comprises or consists of Cu . The non- conductive layer 23 comprises or consists of CuaN . The optoelectronic semiconductor chip 5 is a micro-LED . The interconnect material 7 is selected from the group consisting of Sn, SnAg, SnAgCu, SnBi , AuSn, and combinations thereof .

[0082] The features and exemplary embodiments described in connection with the figures can be combined with each other according to further exemplary embodiments , even i f not all combinations are explicitly described . Furthermore , the exemplary embodiments described in connection with the figures may have alternative or additional features as described in the general part .

[0083] This patent application claims the priority of German patent application 10 2023 133 633 . 9 , the disclosure content of which is hereby incorporated by reference .

[0084] The invention is not restricted to the exemplary embodiments by the description on the basis of said exemplary embodiments . Rather, the invention encompasses any new feature and also any combination of features , which in particular comprises any combination of features in the patent claims and any combination of features in the exemplary embodiments , even i f this feature or this combination itsel f is not explicitly speci fied in the patent claims or exemplary embodiments .

[0085] References

[0086] 1 optoelectronic component

[0087] 2 carrier

[0088] 21 base body

[0089] 22 conductor track

[0090] 23 non-conductive layer

[0091] 3 electromagnetic radiation

[0092] 4 mask

[0093] 41 opening

[0094] 42 window

[0095] 5 optoelectronic semiconductor chip

[0096] 6 tacky material

[0097] 7 interconnect material

[0098] 8 wafer sheet

[0099] 9 st amp

[0100] 10 substrate

[0101] 11 adhesive layer

[0102] 12 Xe flash lamp

Claims

Claims1. Method for producing an optoelectronic component (1) comprising- providing a carrier (2) comprising a base body (21) , a conductor track (22) , and a non-conductive layer (23) , wherein the conductor track (22) is covered with the non- conductive layer (23) at least at parts of the conductor track ( 22 ) ,- selective heating of the conductor track (22) such that the non-conductive layer (23) is partially removed and a part of the conductor track (22) is exposed.

2. Method according to claim 1, wherein selective heating is performed using pulsed electromagnetic radiation (3) .

3. Method according to claim 2, wherein- a mask (4) is used during selective heating,- the mask (4) completely covers the carrier (2) , and- the mask (4) comprises different transmissivities for the pulsed electromagnetic radiation (3) .

4. Method according to any of claims 1 or 2, wherein- a mask (4) is used during selective heating, and- the mask (4) covers the carrier (2) in such a way that a part of the conductor track (22) remains free of the mask (4) .

5. Method according to any of claims 1 to 4, wherein a material of the non-conductive layer (23) is decomposed during selective heating.

6. Method according to any of claims 1 to 5, wherein the conductor track (22) is heated to a temperature of between and including 400 °C and 450 °C during selective heating .

7. Method according to any of claims 1 to 6, further comprising arranging an optoelectronic semiconductor chip (5) on the carrier (2) such that it is electrically contactable via the conductor track (22) .

8. Method according to claim 7, wherein the optoelectronic semiconductor chip (5) is arranged on the carrier (2) by laser induced forward transfer.

9. Method according to any of claims 7 or 8, wherein a tacky material (6) is applied on the carrier (2) before arranging the optoelectronic semiconductor chip (5) on the carrier ( 2 ) .

10. Method according to claim 7, wherein the optoelectronic semiconductor chip (5) is arranged on the carrier (2) by transferring from a wafer sheet (8) using a stamp ( 9 ) .

11. Method according to any of claims 7 to 10, further comprising positive substance jointing of the optoelectronic semiconductor chip (5) and the conductor track (22) with an interconnect material (7) .

12. Method according to claim 11, wherein positive substance jointing is performed using pulsed electromagnetic radiation (3) .

13. Optoelectronic component (1) comprising- a carrier (2) with a base body (21) and a conductor track (22) , and- an optoelectronic semiconductor chip (5) , wherein- the base body (21) is transparent,- the conductor track (22) is partially embedded in the base body (21) ,- a part of the conductor track (22) is covered with a non- conductive layer (23) , and- the optoelectronic semiconductor chip (5) is electrically contactable via the conductor track (22) .

14. Optoelectronic component (1) according to claim 13, wherein- the conductor track (22) comprises a metal, and- the non-conductive layer (23) comprises a compound of the metal .

15. Optoelectronic component (1) according to any of claims13 to 14, wherein the conductor track (22) comprises or consists of Cu.

16. Optoelectronic component (1) according to any of claims 13 to 15, wherein the non-conductive layer (23) comprises CuaN.

17. Optoelectronic component (1) according to any of claims13 to 16, wherein the base body (21) comprises a plastic.

18. Optoelectronic component (1) according to any of claims 13 to 17, whereinthe optoelectronic semiconductor chip (5) and the conductor track (22) are connected via an interconnect material (7) selected from the group consisting of Sn, SnAg, SnAgCu, SnBi, AuSn, and combinations thereof.

19. Optoelectronic component (1) according to any of claims13 to 18, wherein the optoelectronic semiconductor chip (5) comprises or consists of a micro-LED or a mini-LED.

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