Substrate processing apparatus and substrate processing method

Abstract

This substrate processing apparatus for processing a substrate includes: a substrate holding part that holds the substrate; a light irradiation part that irradiates a peripheral edge part of the substrate held by the substrate holding part with irradiation light; a light adjustment layer that is provided at least on an outer peripheral part of the substrate holding part and changes the condition of the irradiation light; and a light detection part that receives at least one of reflected light from the substrate held by the substrate holding part and reflected light from the light adjustment layer.

Description

Substrate processing apparatus and substrate processing method

[0001] The present disclosure relates to a substrate processing apparatus and a substrate processing method.

[0002] Patent Document 1 discloses a wafer outer shape detection device that detects the outer shape of a wafer. This wafer outer shape detection device has an edge detection sensor for detecting the outer edge portion of the wafer, and detects the outer shape of the wafer based on the detection result of the edge detection sensor.

[0003] International Publication No. 2008 / 153086

[0004] The technology according to the present disclosure appropriately detects the peripheral edge of a substrate when the substrate is processed.

[0005] One aspect of the present disclosure is a substrate processing apparatus for processing a substrate, comprising: a substrate holding unit for holding the substrate; a light irradiation unit for irradiating a peripheral portion of the substrate held by the substrate holding unit with irradiation light; a light adjustment layer provided at least on the outer periphery of the substrate holding unit for changing the state of the irradiation light; and a light detection unit for receiving at least one of reflected light from the substrate held by the substrate holding unit and reflected light from the light adjustment layer.

[0006] According to the present disclosure, when a substrate is processed, the peripheral edge of the substrate can be appropriately detected.

[0007] 1 is a plan view showing an outline of the configuration of a wafer processing system according to the present embodiment; FIG. 2 is a side view showing an outline of the internal configuration of a wafer processing system according to the present embodiment; FIG. 3 is a side view showing an outline of the configuration of a first wafer and a second wafer; FIG. 4 is a plan view showing an outline of the configuration of a first wafer; FIG. 5 is a plan view showing an outline of the configuration of a second wafer; FIG. 6 is a cross-sectional view showing an outline of the configuration of a bonding device; FIG. 7 is a longitudinal sectional view showing an outline of the configuration of a bonding device; FIG. 8 is a longitudinal sectional view showing an outline of the configuration of an upper chuck and a lower chuck; FIG. 9 is a flowchart showing main steps of a wafer bonding process; FIG. 10 is a longitudinal sectional view showing an outline of the configuration of an upper imaging unit and an explanatory diagram of a captured image; FIG. 11 is a longitudinal sectional view showing an outline of the configuration of an upper imaging unit according to another embodiment and an explanatory diagram of a captured image; FIG. 12 is a longitudinal sectional view showing an outline of the configuration of an upper imaging unit according to another embodiment and an explanatory diagram of a captured image; FIG. 13 is a longitudinal sectional view showing an outline of the configuration of a conventional upper imaging unit and an explanatory diagram of a captured image;

[0008] In three-dimensional integration technology for stacking semiconductor devices in three dimensions, two semiconductor wafers (hereinafter referred to as "wafers") are bonded together. In the bonding process, the wafers are bonded together using, for example, van der Waals forces and hydrogen bonds (intermolecular forces). In order to properly manufacture semiconductor devices, it is important to properly align, for example, a first wafer placed on the bottom with a second wafer placed on the top when bonding and stacking the wafers.

[0009] For example, in the apparatus disclosed in Patent Document 1, when positioning a wafer, an edge detection sensor detects the outer edge of the wafer, and a wafer outer shape detection device detects the outer shape of the wafer based on the detection result of the edge detection sensor. The edge detection sensor also detects changes in optical properties of the edge of the wafer, including at least one of the color and reflectance of the edge.

[0010] However, for example, when edge trimming is performed on a wafer and at least a portion of the peripheral edge of the wafer is removed, it may be difficult to detect a change in optical characteristics with the edge detection sensor disclosed in Patent Document 1. Therefore, there is room for improvement in the conventional bonding process.

[0011] The technology disclosed herein appropriately detects the peripheral edge of a substrate when processing the substrate. Hereinafter, a bonding apparatus as a substrate processing apparatus and a bonding method as a substrate processing method according to the present embodiment will be described with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and redundant description will be omitted.

[0012] <Configuration of Wafer Processing System> First, the configuration of the wafer processing system according to this embodiment will be described. Fig. 1 is a plan view showing an outline of the configuration of wafer processing system 1. Fig. 2 is a side view showing an outline of the internal configuration of wafer processing system 1. In the following, to clarify the positional relationships, mutually orthogonal X-axis, Y-axis, and Z-axis directions are defined, and the positive Z-axis direction is defined as the vertically upward direction.

[0013] 3 , the wafer processing system 1 bonds two substrates, a first wafer W as a first substrate and a second wafer S as a second substrate, to form a bonded wafer T. In the first wafer W, the surface bonded to the second wafer S is referred to as the front surface Wa, and the surface opposite the front surface Wa is referred to as the back surface Wb. Similarly, in the second wafer S, the surface bonded to the first wafer W is referred to as the front surface Sa, and the surface opposite the front surface Sa is referred to as the back surface Sb.

[0014] As shown in Figures 3 and 4, the first wafer W is a semiconductor wafer such as a silicon substrate, and is a device wafer having a device layer formed on its surface Wa. In the following description, the surface Wa is assumed to include the device layer. The peripheral edge We of the first wafer W is chamfered, and the thickness of the cross section of the peripheral edge We decreases toward its tip. The first wafer W is edge-trimmed, and at least a portion of the peripheral edge We of the first wafer W (at least a portion on the surface Wa side) is removed, forming a stepped trim portion Wt in the peripheral edge We. A notch Wn is formed in the outer edge Wf of the first wafer W.

[0015] 3 and 5, the second wafer S is a semiconductor wafer such as a silicon substrate, and is a support wafer that supports the first wafer W. A notch portion Sn is formed in the outer edge portion Sf of the second wafer S. The second wafer S may be an epitaxial wafer on which no pattern is formed. Alternatively, the second wafer S may be a device wafer similar to the first wafer W.

[0016] As shown in FIG. 1, the wafer processing system 1 includes a cassette C that can accommodate a plurality of wafers W, S, and a plurality of stacked wafers T, for example, between the outside and the system. Ｗ , C Ｓ , C Ｔ and a processing station 3 equipped with various processing devices for performing desired processing on the wafers W, S and the overlapped wafer T, which are integrally connected.

[0017] The loading / unloading station 2 is provided with a cassette mounting table 10. The cassette mounting table 10 is provided with a plurality of, for example, four cassette mounting plates 11. The cassette mounting plates 11 are arranged in a line in the horizontal Y-axis direction (the up-down direction in FIG. 1). These cassette mounting plates 11 are provided with a cassette C Ｗ , C Ｓ , C Ｔ When carrying in or out the cassette C Ｗ , C Ｓ , C Ｔ In this way, the loading / unloading station 2 is configured to be able to hold a plurality of first wafers W, a plurality of second wafers S, and a plurality of overlapped wafers T. The number of cassette mounting plates 11 is not limited to that in this embodiment, and can be set arbitrarily. One of the cassettes may also be used to recover abnormal wafers. In other words, it is a cassette that can separate a wafer in which an abnormality has occurred in the bonding between the first wafer W and the second wafer S due to various factors from the other normal overlapped wafers T. In this embodiment, a plurality of cassettes C Ｔ One cassette C Ｔ is used to recover abnormal wafers, and other cassettes C Ｔ is used to accommodate a normal overlapped wafer T.

[0018] The loading / unloading station 2 is provided with a wafer transfer section 20 adjacent to the cassette mounting table 10. The wafer transfer section 20 is provided with a wafer transfer device 22 that is movable on a transfer path 21 extending in the Y-axis direction. The wafer transfer device 22 is also movable in the vertical direction and around the vertical axis (θ-axis), and transfers the cassettes C on each cassette mounting plate 11. Ｗ , C Ｓ , C Ｔ and the transition devices 50 and 51 in the third processing block G3 of the processing station 3, which will be described later, can transfer wafers W, S, and overlapping wafer T between them.

[0019] Processing station 3 is provided with multiple processing blocks, e.g., three processing blocks G1, G2, and G3, each equipped with various devices. For example, a first processing block G1 is provided on the front side (negative Y-axis side in FIG. 1 ) of processing station 3, and a second processing block G2 is provided on the rear side (positive Y-axis side in FIG. 1 ) of processing station 3. Furthermore, a third processing block G3 is provided on the loading / unloading station 2 side of processing station 3 (negative X-axis side in FIG. 1 ).

[0020] The first processing block G1 is provided with a surface modification device 30 that modifies the surfaces Wa, Sa of the wafers W, S. In the surface modification device 30, for example, under a reduced pressure atmosphere, oxygen gas or nitrogen gas serving as a processing gas is excited to form plasma and ionized. The oxygen ions or nitrogen ions are irradiated onto the surfaces Wa, Sa, and the surfaces Wa, Sa are subjected to plasma processing and modified.

[0021] In the second processing block G2, a surface hydrophilization device 40 that hydrophilizes the surfaces Wa, Sa of the wafers W, S using, for example, pure water and cleans the surfaces Wa, Sa, and a bonding device 41 that bonds the wafers W, S are arranged in this order in the horizontal X-axis direction from the load / unload station 2 side. The configuration of the bonding device 41 will be described later.

[0022] In the surface hydrophilization device 40, pure water is supplied onto the wafers W, S while the wafers W, S are rotated, for example, while being held by a spin chuck. Then, the supplied pure water is diffused over the surfaces Wa, Sa of the wafers W, S, and the surfaces Wa, Sa are hydrophilized.

[0023] As shown in FIG. 2, in the third processing block G3, transition devices 50 and 51 for wafers W and S and overlapping wafer T are provided in two stages in this order from the bottom.

[0024] 1, a region surrounded by the first to third processing blocks G1 to G3 forms a wafer transfer region 60. In the wafer transfer region 60, for example, a wafer transfer device 61 is disposed.

[0025] The wafer transfer device 61 has a transfer arm that is movable, for example, in the vertical direction, horizontal directions (X-axis direction, Y-axis direction), and around the vertical axis (θ-axis). The wafer transfer device 61 moves within the wafer transfer region 60 and can transfer wafers W, S, and overlapped wafer T to desired devices within the surrounding first processing block G1, second processing block G2, and third processing block G3.

[0026] The wafer processing system 1 described above is provided with at least one controller 70. The controller 70 processes computer-executable instructions that cause the wafer processing system 1 to perform the various steps described in this disclosure. The controller 70 may be configured to control each element of the wafer processing system 1 to perform the various steps described herein. In one embodiment, part or all of the controller 70 may be included in the wafer processing system 1. The controller 70 may include a processing unit, a storage unit, and a communication interface. The controller 70 is implemented, for example, by a computer. The processing unit may be configured to read from the storage unit a program that provides logic or routines that enable various control operations to be performed, and to execute the read program to perform various control operations. This program may be stored in the storage unit in advance or may be acquired via a medium when needed. The acquired program is stored in the storage unit and read from the storage unit by the processing unit for execution. The medium may be various computer-readable storage media or a communication line connected to the communication interface. The storage medium may be temporary or non-temporary. The processing unit may be a CPU (Central Processing Unit) or one or more circuits. The storage unit may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface may communicate with the wafer processing system 1 via a communication line such as a LAN (Local Area Network).

[0027] <Configuration of the welding device> Next, a description will be given of the configuration of the above-mentioned welding device 41. Fig. 6 is a cross-sectional view showing an outline of the configuration of the welding device 41. Fig. 7 is a vertical-sectional view showing an outline of the configuration of the welding device 41.

[0028] 6 and 7, the bonding apparatus 41 has a processing vessel 100 whose interior can be sealed. A loading / unloading port 101 for the wafers W, S, and the overlapping wafer T is formed on the side of the processing vessel 100 on the wafer transfer region 60 side, and an opening / closing shutter 102 is provided at the loading / unloading port 101.

[0029] The interior of the processing vessel 100 is divided into a transfer region R1 and a processing region R2 by an inner wall 103. The above-mentioned loading / unloading port 101 is formed on the side surface of the processing vessel 100 in the transfer region R1. In addition, loading / unloading ports 104 for the wafers W, S, and the overlapped wafer T are also formed in the inner wall 103.

[0030] A transition 110 is provided on the positive Y-axis side of the transfer region R1 for temporarily placing wafers W, S, and overlapping wafers T. The transition 110 is formed, for example, in two stages, and any two of the wafers W, S, and overlapping wafers T can be placed on the transition 110 at the same time.

[0031] A wafer transfer mechanism 111 is provided in the transfer region R1. The wafer transfer mechanism 111 has a transfer arm that is movable, for example, in the vertical direction, horizontal directions (X-axis direction, Y-axis direction), and around a vertical axis (θ-axis). The wafer transfer mechanism 111 can transfer wafers W, S, and overlapping wafers T within the transfer region R1 or between the transfer region R1 and the processing region R2.

[0032] A position adjustment mechanism 120 that adjusts the horizontal orientation of the wafers W and S is provided on the negative Y-axis side of the transfer region R1. The position adjustment mechanism 120 includes a base 121 equipped with a holder (not shown) that holds and rotates the wafers W and S, and a detector 122 that detects the positions of the notch portions Wn and Sn of the wafers W and S. The position adjustment mechanism 120 rotates the wafers W and S held on the base 121 while detecting the positions of the notch portions Wn and Sn of the wafers W and S using the detector 122, thereby adjusting the positions of the notch portions Wn and Sn to adjust the horizontal orientation of the wafers W and S. The method for holding the wafers W and S on the base 121 is not particularly limited, and various methods, such as a pin chuck method or a spin chuck method, may be used.

[0033] The transfer region R1 is also provided with an inversion mechanism 130 that inverts the front and back surfaces of the second wafer S. The inversion mechanism 130 has a holding arm 131 that holds the second wafer S. The holding arm 131 extends in the horizontal direction (X-axis direction). The holding arm 131 is also provided with holding members 132 that hold the second wafer S at, for example, four locations.

[0034] The holding arm 131 is supported by a drive unit 133 equipped with, for example, a motor. The drive unit 133 allows the holding arm 131 to rotate about a horizontal axis. The holding arm 131 is also rotatable about the drive unit 133 and movable horizontally (in the X-axis direction). Another drive unit (not shown), equipped with, for example, a motor, is provided below the drive unit 133. This other drive unit allows the drive unit 133 to move vertically along a support column 134 extending vertically. In this manner, the drive unit 133 allows the second wafer S held by the holding member 132 to rotate about a horizontal axis and move vertically and horizontally. The second wafer S held by the holding member 132 can also rotate about the drive unit 133 and move between the position adjustment mechanism 120 and an upper chuck 140 (described later).

[0035] The processing region R2 is provided with an upper chuck 140 as a second holding part that suction-holds the second wafer S on its lower surface, and a lower chuck 141 as a first holding part that places the first wafer W on its upper surface and suction-holds it. The lower chuck 141 is provided below the upper chuck 140 and is configured to be able to be arranged opposite the upper chuck 140. That is, the second wafer S held by the upper chuck 140 and the first wafer W held by the lower chuck 141 can be arranged opposite each other. The configurations of the upper chuck 140 and the lower chuck 141 will be described later.

[0036] The upper chuck 140 is supported by an upper chuck stage 150 provided above the upper chuck 140. The upper chuck stage 150 is provided with an upper imaging unit 151 that captures an image of the front surface Wa of the first wafer W held by the lower chuck 141, particularly the peripheral region of the peripheral edge portion We. That is, the upper imaging unit 151 is provided adjacent to the upper chuck 140. The configuration of the upper imaging unit 151 will be described later.

[0037] The upper chuck stage 150 is supported by a rotating unit 153 serving as a moving mechanism, which is provided on the ceiling surface of the processing vessel 100 via a plurality of support members 152 above the upper chuck stage 150. The rotating unit 153 is configured to rotate the upper chuck stage 150 and the upper chuck 140 around a vertical axis (θ-axis). The rotating unit 153 may be provided with a measuring unit (e.g., a linear scale) (not shown) for measuring the position of the upper chuck 140 in the θ-axis direction.

[0038] The lower chuck 141 is supported by a lower chuck stage 160 provided below the lower chuck 141. The lower chuck stage 160 is provided with a lower imaging unit 161 that captures an image of the surface Sa of the second wafer S held by the upper chuck 140, particularly the peripheral area of ​​the peripheral edge. That is, the lower imaging unit 161 is provided adjacent to the lower chuck 141. The lower imaging unit 161 may be, for example, a CCD camera.

[0039] The lower chuck stage 160 is supported by a first lower chuck moving unit 162 provided below the lower chuck stage 160. The first lower chuck moving unit 162 is configured to move the lower chuck 141 in the horizontal direction (X-axis direction), as will be described later. The first lower chuck moving unit 162 is also configured to move the lower chuck 141 in the vertical direction (Z-axis direction). In addition, although the first lower chuck moving unit 162 moves the lower chuck 141 in the X-axis direction and the Z-axis direction in this embodiment, a moving unit for moving the lower chuck 141 in the X-axis direction and a moving unit for moving the lower chuck 141 in the Z-axis direction may be provided separately.

[0040] The first lower chuck moving part 162 is provided on the lower surface side of the first lower chuck moving part 162 and is attached to a pair of rails 163, 163 extending in the horizontal direction (X-axis direction). The first lower chuck moving part 162 is configured to be movable along the rails 163.

[0041] The pair of rails 163, 163 are disposed on a second lower chuck moving part 164. The second lower chuck moving part 164 is provided on the lower surface side of the second lower chuck moving part 164 and is attached to a pair of rails 165, 165 extending in the horizontal direction (Y-axis direction). The second lower chuck moving part 164 is configured to be movable along the rails 165, i.e., configured to move the lower chuck 141 in the horizontal direction (Y-axis direction). The pair of rails 165, 165 are disposed on a mounting table 166 provided on the bottom surface of the processing vessel 100.

[0042] (Configuration of Upper Chuck and Lower Chuck) Next, a detailed description will be given of the configuration of the upper chuck 140 and the lower chuck 141 of the joining device 41. FIG.

[0043] 8, the upper chuck 140 employs a pin chuck system. The upper chuck 140 has a main body 170 having a diameter larger than the diameter of the second wafer S in a plan view. A plurality of pins 171 that come into contact with the back surface Sb of the second wafer S are provided on the lower surface of the main body 170. In addition, an outer rib 172 that has the same height as the pins 171 and supports the outer periphery of the back surface Sb of the second wafer S is provided on the outer periphery of the lower surface of the main body 170. The outer rib 172 is provided in a ring shape around the outer periphery of the plurality of pins 171.

[0044] Furthermore, an inner rib 173 is provided on the underside of the main body 170, inside the outer rib 172, and has the same height as the pins 171. The inner rib 173 supports the back surface Sb of the second wafer S. The inner rib 173 is provided in a ring shape concentric with the outer rib 172. An inner region 174 of the outer rib 172 (hereinafter sometimes referred to as the suction region 174) is partitioned into a first suction region 174a inside the inner rib 173 and a second suction region 174b outside the inner rib 173.

[0045] The first suction region 174 a and the second suction region 174 b are each provided with a suction pipe (not shown), and the suction pipe is connected to a vacuum pump (not shown). The upper chuck 140 is configured to be able to evacuate the second wafer S through each of the first suction region 174 a and the second suction region 174 b by evacuating the first suction region 174 a and the second suction region 174 b.

[0046] A through-hole 175 is formed in the center of the main body 170 of the upper chuck 140 and the center of the upper chuck stage 150, penetrating the main body 170 and the upper chuck stage 150 in the thickness direction. The center of the main body 170 corresponds to the center of the second wafer S held by suction on the upper chuck 140. The tip of an actuator portion 181 of a pressing portion 180, which will be described later, is inserted into the through-hole 175.

[0047] A pressing part 180 that presses the center of the second wafer S is provided at the center of the top surface of the upper chuck stage 150. The pressing part 180 has an actuator part 181 and a cylinder part 182 as abutting members.

[0048] The actuator unit 181 generates a constant pressure in a fixed direction using air supplied from an electropneumatic regulator (not shown), and can generate the constant pressure regardless of the position of the point of application of the pressure. The air from the electropneumatic regulator allows the actuator unit 181 to abut against the center of the second wafer S and control the pressing load applied to the center of the second wafer S. The tip of the actuator unit 181 is inserted through the through-hole 175 and can be raised and lowered vertically using the air from the electropneumatic regulator.

[0049] The actuator part 181 is supported by a cylinder part 182. The cylinder part 182 can move the actuator part 181 in the vertical direction by a drive part having a built-in motor, for example.

[0050] As described above, the pushing unit 180 controls the pressing load by the actuator unit 181, and controls the movement of the actuator unit 181 by the cylinder unit 182. Then, the pushing unit 180 can bring the center of the second wafer S into contact with the center of the first wafer W and press them together when bonding the wafers W and S, which will be described later.

[0051] The lower chuck 141 employs a pin chuck system similar to the upper chuck 140. The lower chuck 141 has a main body 190 having a diameter larger than the diameter of the first wafer W in a planar view. A wavelength conversion layer 191 serving as a light adjustment layer is provided on the outer periphery of the upper surface of the main body 190. The wavelength conversion layer 191 is annular in a planar view, extending from the outer edge of the upper surface of the main body 190 to a position overlapping the peripheral edge We of the first wafer W held by the lower chuck 141. The wavelength conversion layer 191 converts the wavelength of the light irradiated from a light irradiation unit 201 of the upper imaging unit 151 (described later). The wavelength conversion layer 191 may be formed, for example, by attaching a wavelength conversion sheet to the outer periphery of the upper surface of the main body 190, or by applying a wavelength conversion material to the outer periphery of the upper surface of the main body 190 to form a wavelength conversion film. In addition, in this embodiment, the wavelength conversion layer 191 is provided on the outer periphery of the upper surface of the main body 190 , but it may be provided on the entire upper surface of the main body 190 .

[0052] A plurality of pins 192 that come into contact with the back surface Wb of the first wafer W are provided on the upper surface of the main body 190. In addition, an outer rib 193 that has the same height as the pins 192 and supports the outer periphery of the back surface Wb of the first wafer W is provided on the outer periphery of the upper surface of the main body 190. The outer rib 193 is provided in a ring shape outside the plurality of pins 192.

[0053] Furthermore, an inner rib 194 is provided on the upper surface of the main body 190, inside the outer rib 193, and has the same height as the pins 192. The inner rib 194 supports the back surface Wb of the first wafer W. The inner rib 194 is provided in a ring shape concentric with the outer rib 193. An inner region 195 of the outer rib 193 (hereinafter, sometimes referred to as the suction region 195) is partitioned into a first suction region 195a inside the inner rib 194 and a second suction region 195b outside the inner rib 194.

[0054] The first suction region 195 a and the second suction region 195 b are each provided with a suction pipe (not shown), and the suction pipe is connected to a vacuum pump (not shown). The lower chuck 141 is configured to be able to evacuate the first wafer W through each of the first suction region 195 a and the second suction region 195 b by evacuating the first suction region 195 a and the second suction region 195 b.

[0055] In the lower chuck 141, through holes (not shown) that penetrate the body 190 in the thickness direction are formed in, for example, three locations near the center of the body 190. Elevating pins provided below the first lower chuck moving part 162 are adapted to be inserted into the through holes.

[0056] Guide members (not shown) are provided on the outer periphery of the main body 190 to prevent the wafers W, S, and the overlapped wafer T from jumping out or sliding off the lower chuck 141. The guide members are provided at multiple locations, for example, four locations, at equal intervals on the outer periphery of the main body 190.

[0057] The operation of each part of the joining device 41 is controlled by the control device 70 described above.

[0058] <Bonding Method> Next, a description will be given of a method for bonding wafers W and S performed using the wafer processing system 1 configured as described above. Fig. 9 is a flowchart showing the main steps of the wafer bonding process.

[0059] First, a cassette C containing a plurality of first wafers W is Ｗ , a cassette C containing a plurality of second wafers S; Ｓ , and an empty cassette C Ｔ is placed on the desired cassette placement plate 11 of the loading / unloading station 2. Thereafter, the cassette C Ｓ The second wafer S is then removed and transferred to the transition device 50 in the third processing block G3 of the processing station 3.

[0060] Next, the second wafer S is transferred by the wafer transfer device 61 to the surface modification device 30 in the first processing block G1. In the surface modification device 30, the processing gas, oxygen gas or nitrogen gas, is excited to form plasma and ionized in a desired reduced pressure atmosphere. The oxygen ions or nitrogen ions are irradiated onto the surface Sa of the second wafer S, and the surface Sa is subjected to plasma processing. Then, the surface Sa of the second wafer S is modified (St1 in FIG. 9 ).

[0061] Next, the second wafer S is transferred by the wafer transfer device 61 to the surface hydrophilization device 40 in the second processing block G2. In the surface hydrophilization device 40, pure water is supplied onto the second wafer S while the second wafer S held by the spin chuck is being rotated. The supplied pure water then diffuses over the surface Sa of the second wafer S, and hydroxyl groups (silanol groups) adhere to the surface Sa of the second wafer S that has been modified in the surface modification device 30, thereby hydrophilizing the surface Sa. The surface Sa of the second wafer S is also cleaned by the pure water (St2 in FIG. 9 ).

[0062] Next, the second wafer S is transferred to the bonding device 41 in the second processing block G2 by the wafer transfer device 61. After being loaded into the bonding device 41, the second wafer S is transferred to the position adjustment mechanism 120 by the wafer transfer mechanism 111 via the transition 110. The horizontal orientation of the second wafer S is then adjusted by the position adjustment mechanism 120 (St3 in FIG. 9 ).

[0063] Thereafter, the second wafer S is transferred from the position adjustment mechanism 120 to the holding arm 131 of the reversing mechanism 130. Subsequently, in the transfer region R1, the holding arm 131 is reversed to reverse the front and back surfaces of the second wafer S (St4 in FIG. 9 ). That is, the front surface Sa of the second wafer S faces downward.

[0064] Thereafter, the holding arm 131 of the reversing mechanism 130 rotates around the drive unit 133 and moves to below the upper chuck 140. Then, the second wafer S is transferred from the reversing mechanism 130 to the upper chuck 140. The back surface Sb of the second wafer S is held by suction on the upper chuck 140 (St5 in FIG. 9 ).

[0065] While the second wafer S is being subjected to the above-described processes St1 to St5, the first wafer W is being processed following the second wafer S. First, the cassette C Ｗ The first wafer W is removed from the wafer storage unit 10 and transferred to the transition device 50 of the processing station 3 .

[0066] Next, the first wafer W is transferred by the wafer transfer device 61 to the surface modification device 30, where the front surface Wa of the first wafer W is modified (St6 in FIG. 9). Note that the modification of the front surface Wa of the first wafer W in St6 is the same as in St1 described above.

[0067] Thereafter, the first wafer W is transferred by the wafer transfer device 61 to the surface hydrophilization device 40, where the front surface Wa of the first wafer W is hydrophilized and cleaned (St7 in FIG. 9 ). Note that the hydrophilization and cleaning of the front surface Wa of the first wafer W in St7 are similar to those in St2 described above.

[0068] Thereafter, the first wafer W is transferred to the bonding device 41 by the wafer transfer device 61. The first wafer W transferred into the bonding device 41 is transferred to the position adjustment mechanism 120 by the wafer transfer mechanism 111 via the transition 110. Then, the horizontal orientation of the first wafer W is adjusted by the position adjustment mechanism 120 (St8 in FIG. 9 ).

[0069] Thereafter, the first wafer W is transferred to the lower chuck 141 by the wafer transfer mechanism 111, and the back surface Sb of the first wafer W is held by suction on the lower chuck 141 (St9 in FIG. 9).

[0070] Next, the upper imaging unit 151 is used to image the surface Wa of the first wafer W, particularly the area around the peripheral edge We, and the lower imaging unit 161 is used to image the surface Sa of the second wafer S, particularly the area around the peripheral edge (St10 in FIG. 9 ). Specifically, the first lower chuck moving unit 162 and the second lower chuck moving unit 164 move the lower chuck 141 in the horizontal direction (X-axis direction and Y-axis direction), and the upper imaging unit 151 is used to image the peripheral edge We of the surface Wa of the first wafer W. At the same time, the rotation unit 153 moves the upper chuck 140 in the θ-axis direction, and the lower imaging unit 161 is used to image the peripheral edge of the surface Sa of the second wafer S. The captured images are output to the control device 70.

[0071] Next, the horizontal positions of the first wafer W held by the lower chuck 141 and the second wafer S held by the upper chuck 140 are adjusted (St11 in FIG. 9 ). Specifically, the control device 70 calculates the position of the first wafer W from its outer edge Wf to its center based on the image captured by the upper imaging unit 151. The control device 70 also calculates the position of the second wafer S from its outer edge Sf to its center based on the image captured by the lower imaging unit 161. The first lower chuck moving unit 162 and the second lower chuck moving unit 164 then move the lower chuck 141 to a position where the centers of the first wafer W and the second wafer S coincide with each other, and the rotation unit 153 rotates the upper chuck 140. In this manner, the horizontal positions of the first wafer W and the second wafer S are adjusted.

[0072] Thereafter, the first lower chuck moving unit 162 moves the lower chuck 141 vertically upward to adjust the vertical positions of the upper chuck 140 and the lower chuck 141, and also adjust the vertical positions of the second wafer S held by the upper chuck 140 and the first wafer W held by the lower chuck 141 (St12 in FIG. 9 ). Then, the first wafer W and the second wafer S are disposed opposite each other at desired positions.

[0073] Next, the second wafer S held by the upper chuck 140 and the first wafer W held by the lower chuck 141 are bonded together.

[0074] First, the actuator unit 181 is lowered by the cylinder unit 182 until the actuator unit 181 comes into contact with the center of the back surface Sb of the second wafer S. Subsequently, the actuator unit 181 continues to lower, pressing the center of the second wafer S and lowering it, thereby bringing the center of the second wafer S into contact with and pressing the center of the first wafer W (St13 in FIG. 9 ). At this time, the evacuation of the second wafer S in the first suction region 174a is stopped, while the second wafer S is evacuated in the second suction region 174b.

[0075] When the centers of the second wafer S and the first wafer W are brought into contact and pressed together, bonding begins between the centers. That is, because the surface Sa of the second wafer S and the surface Wa of the first wafer W are modified at St1 and St6, respectively, van der Waals forces (intermolecular forces) are first generated between the surfaces Sa and Wa, thereby bonding the surfaces Sa and Wa together. Furthermore, because the surface Sa of the second wafer S and the surface Wa of the first wafer W are hydrophilized at St2 and St7, respectively, the hydrophilic groups between the surfaces Sa and Wa form hydrogen bonds (intermolecular forces), thereby firmly bonding the surfaces Sa and Wa together.

[0076] Thereafter, the bonding between the surfaces Sa and Wa due to the van der Waals forces and hydrogen bonds described above diffuses from the center toward the periphery. At this time, the vacuum pumping of the second wafer S in the second suction region 174b is stopped. Then, the entire surfaces Sa of the second wafer S and the entire surface Wa of the first wafer W come into contact with each other, and the second wafer S and the first wafer W are bonded together (St14 in FIG. 9 ).

[0077] Thereafter, the actuator part 181 of the pushing part 180 is raised to the upper chuck 140. Furthermore, the vacuum pumping of the first wafer W in the suction region 195 is stopped, and the suction and holding of the first wafer W by the lower chuck 141 is stopped.

[0078] The overlapped wafer T, in which the first wafer W and the second wafer S are bonded together, is transferred to the transition device 51 by the wafer transfer device 61, and then transferred to the cassette C on the desired cassette mounting plate 11 by the wafer transfer device 22 of the transfer station 2. Ｔ In this way, a series of processes for bonding the wafers W and S is completed.

[0079] <Configuration of Upper Imaging Unit and Imaging Method> Next, a detailed configuration of the upper imaging unit 151 of the bonding apparatus 41 and a method for imaging the peripheral portion We of the first wafer W by the upper imaging unit 151 in St10 will be described. Fig. 10 is a vertical cross-sectional view showing an outline of the configuration of the upper imaging unit 151. The upper imaging unit 151 images the front surface Wa of the first wafer W held by the lower chuck 141, particularly the area surrounding the peripheral portion We.

[0080] 10 , the upper imaging unit 151 includes a lens barrel 200, a light irradiation unit 201, a half mirror 202, a filter 203, and a light detection unit 204. In this embodiment, since it is difficult to provide a light irradiation unit on the lower chuck 141 side, the upper imaging unit 151 captures an image of the front surface Wa of the first wafer W by reflecting the irradiation light.

[0081] The light irradiation unit 201 is provided on a side surface of the lens barrel 200. The light irradiation unit 201 is a light source that emits irradiation light L1. The irradiation light L1 is, for example, light that does not pass through the first wafer W, such as visible light. The wavelength A of the irradiation light L1 is, for example, a wavelength around the blue region of visible light.

[0082] The half mirror 202 is provided inside the lens barrel 200 at a position facing the light irradiation unit 201, with the mirror surface tilted 45 degrees vertically downward from the state in which it faces the light irradiation unit 201. The irradiation light L1 emitted from the light irradiation unit 201 is reflected by the half mirror 202, and the peripheral edge portion We of the first wafer W is irradiated with the irradiation light L1.

[0083] The irradiation light L1 emitted from the light irradiation unit 201 is reflected by the peripheral edge We of the first wafer W. The wavelength of the reflected light L2 from the peripheral edge We is the same as the wavelength A of the irradiation light L1.

[0084] The irradiation light L1 emitted from the light irradiation unit 201 is also irradiated onto the wavelength conversion layer 191 of the lower chuck 141 radially outside the peripheral edge We of the first wafer W and is reflected by the wavelength conversion layer 191. As described above, the wavelength conversion layer 191 is provided from the outer end of the upper surface of the main body 190 to a position overlapping the peripheral edge We of the first wafer W held by the lower chuck 141 in a plan view. Therefore, all of the irradiation light L1 leaking from the peripheral edge We of the first wafer W is irradiated onto the wavelength conversion layer 191. The wavelength of the irradiation light L1 irradiated onto the wavelength conversion layer 191 is converted from wavelength A to wavelength B. That is, the wavelength of the reflected light L3 from the wavelength conversion layer 191 becomes wavelength B. This wavelength B is longer than wavelength A and is, for example, a wavelength in the green to red region of visible light.

[0085] The filter 203 is provided above the half mirror 202 inside the lens barrel 200. The filter 203 is a light-cut filter that cuts (blocks) light of a specific wavelength, and in this embodiment, cuts light of wavelength A. That is, the filter 203 cuts out the reflected light L2 of wavelength A from the peripheral edge We of the first wafer W and does not transmit it, but transmits only the reflected light L3 of wavelength B from the wavelength conversion layer 191.

[0086] The light detection unit 204 is provided on the top surface of the lens barrel 200. The light detection unit 204 is, for example, a camera, and receives reflected light L3 that has passed through the filter 203. The light detection unit 204 captures an image of the surrounding area of ​​the peripheral edge We.

[0087] 13 , the wavelength conversion layer 191 of the present embodiment is not provided on the upper surface of the conventional lower chuck 500. Furthermore, the conventional imaging unit 510 includes a lens barrel 511, a light irradiation unit 512, a half mirror 513, and a light detection unit 514, and does not include the filter 203 of the upper imaging unit 151 of the present embodiment. The irradiation light L51 having a wavelength A emitted from the light irradiation unit 512 is reflected by the peripheral portion We of the first wafer W, and the wavelength of the reflected light L52 from this peripheral portion We is the same wavelength A as the irradiation light L51. Furthermore, the irradiation light L51 emitted from the light irradiation unit 512 is also reflected by the upper surface of the lower chuck 500, and the wavelength of the reflected light L53 from the upper surface of the lower chuck 500 is also the same wavelength A as the irradiation light L51.

[0088] 13( a), for example, if the first wafer W is not edge-trimmed and no trim portion is formed on the peripheral edge We, the irradiated light L51 is not reflected vertically upward by the beveled portion of the peripheral edge We, and the light detection unit 514 does not receive the reflected light from the bevel portion. Therefore, in the image M50 captured by the light detection unit 514, the bevel portion is indicated by a black region N51. Meanwhile, in the image M50, the area radially inward from the bevel portion of the first wafer W is indicated by a white region N52, and the area radially outward from the bevel portion (the upper surface of the lower chuck 500) is indicated by a gray region N53. Because the reflected light L52 from the peripheral edge We has a high light intensity, the area radially inward from the bevel portion is indicated by a white region N52, and because the reflected light L52 from the upper surface of the lower chuck 500 has a low light intensity, the area radially outward from the bevel portion is indicated by a gray region N53. This makes it possible to ensure contrast on the radially inner and outer sides of the outer edge Wf of the first wafer W, i.e., to acquire an appropriate image. As a result, it is possible to detect the outer edge Wf of the first wafer W, i.e., the boundary between the first wafer W and the lower chuck 500.

[0089] On the other hand, for example, when edge trimming is performed on the first wafer W and a trimmed portion Wt is formed on the peripheral edge portion We as shown in FIG. 13B, the bevel portion of the peripheral edge portion We may not exist or may be small. In such a case, the image N60 captured by the light detection unit 514 does not include the black region as shown in FIG. 13A, and the peripheral edge portion We is indicated by a white region N61 and the lower chuck 500 is indicated by a gray region N62. This makes it difficult to detect the outer edge Wf of the first wafer W.

[0090] Furthermore, when the peripheral portion We of the first wafer W is ground during edge trimming, non-reproducible grinding marks are formed on the surface of the trimmed portion Wt, as shown in FIG. 13B. In such a case, the image N60 captured by the light detection unit 514 shows a non-reproducible striped pattern on the trimmed portion Wt. This makes it even more difficult to detect the outer edge Wf of the first wafer W.

[0091] Conventionally, attempts have been made to detect the outer edge Wf of the first wafer W by changing the intensity of the irradiation light L51 emitted from the light irradiation unit 512, the irradiation angle of the irradiation light L51 irradiated onto the first wafer W, etc. However, there are variations in the edge trim and in the trim portion Wt, so even if such measures are taken, it is still difficult to detect the outer edge Wf of the first wafer W.

[0092] In contrast, in the upper imaging unit 151 of this embodiment shown in FIG. 10 , the filter 203 cuts out the reflected light L2 of wavelength A from the peripheral edge portion We of the first wafer W and transmits only the reflected light L3 of wavelength B from the wavelength conversion layer 191. That is, the light detection unit 204 receives only the reflected light L3 transmitted through the filter 203. As a result, in the image M10 captured by the light detection unit 204 in St10, the peripheral edge portion We is indicated by a black region N11, and the wavelength conversion layer 191 (lower chuck 141) is indicated by a white region N12. In other words, the influence of the absence of a bevel portion of the peripheral edge portion We as shown in FIG. 13( b) and the influence of grinding marks on the trim portion Wt can be eliminated. Therefore, contrast can be ensured between the radially inner and outer sides of the outer edge portion Wf of the first wafer W, and the outer edge portion Wf of the first wafer W, i.e., the boundary between the first wafer W and the lower chuck 500, can be properly detected.

[0093] It should be noted that the second wafer S is not edge-trimmed, and no trimmed portion is formed on the peripheral edge of the second wafer S. Therefore, in St10, when the peripheral edge of the second wafer S is imaged using the lower imaging unit 161, the outer edge Sf of the second wafer S can be detected, similar to the case described with reference to FIG.

[0094] As described above, in St10, an image is acquired that allows the outer edge Wf of the first wafer W and the outer edge Sf of the second wafer S to be properly detected, and thereafter, in St11, the horizontal positions of the first wafer W and the second wafer S can be properly adjusted. As a result, the first wafer W and the second wafer S can be properly bonded.

[0095] 11 , the filter 203 cuts out reflected light L3 of wavelength B from the wavelength conversion layer 191 and transmits only reflected light L2 of wavelength A from the peripheral edge portion We of the first wafer W. That is, the light detection unit 204 receives only reflected light L2 that has passed through the filter 203. In this case, in the image M20 captured by the light detection unit 204, the peripheral edge portion We is indicated by a white region N21, and the wavelength conversion layer 191 (lower chuck 141) is indicated by a black region N22. In this case, the image of the optical detection unit 204 shows stripes of grinding marks on the trim portion Wt of the peripheral portion We, but since the S / N ratio can be improved radially inside and outside the outer end portion Wf of the first wafer W, the outer end portion Wf of the first wafer W can be properly detected.

[0096] Furthermore, in the upper imaging unit 151 of this embodiment, if a camera that captures color images is used as the light detection unit 204, the filter 203 may be omitted. In such a case, the light detection unit 204 receives both the reflected light L2 of wavelength A from the peripheral portion We of the first wafer W and the reflected light L3 of wavelength B from the wavelength conversion layer 191. Because the reflected light L2 and the reflected light L3 have different wavelengths, the peripheral portion We and the wavelength conversion layer 191 (lower chuck 141) are displayed in different colors in the image captured by the light detection unit 204. As a result, the outer edge Wf of the first wafer W can be properly detected.

[0097] Although a CCD camera is used for the lower imaging unit 161 in this embodiment, the lower imaging unit 161 may have the same configuration as the upper imaging unit 151 .

[0098] <Other Embodiments> In the bonding apparatus 41 of the above embodiment, the wavelength conversion layer 191 is provided on the outer periphery of the upper surface of the lower chuck 141 as a light adjustment layer that changes the state of the irradiated light L1 from the light irradiator 201. However, as shown in FIG. 12 , a reflection suppression layer 250 may also be provided. The reflection suppression layer 250 is provided in the same position as the wavelength conversion layer 191. The reflection suppression layer 250 reduces the reflectance of a specific wavelength by optical interference caused by a thin film, thereby suppressing reflection of the irradiated light L1 irradiated from the light irradiator 201. The reflection suppression layer 250 may be made of, for example, polyurethane. The reflection suppression layer 250 may be provided by, for example, attaching a reflection suppression sheet to the outer periphery of the upper surface of the main body 190, or by applying a reflection suppression material to the outer periphery of the upper surface of the main body 190 to form an reflection suppression film.

[0099] When the anti-reflection layer 250 is provided on the outer periphery of the upper surface of the lower chuck 141, the upper imaging unit 151 has the lens barrel 200, the light irradiation unit 201, the half mirror 202, and the light detection unit 204, and the filter 203 is omitted.

[0100] In this case, the reflection of the irradiation light L1 is suppressed by the reflection suppression layer 250, and the light detection unit 204 receives only the reflected light L2 of wavelength A from the peripheral edge portion We of the first wafer W. In this case, in the image M30 captured by the light detection unit 204, the peripheral edge portion We is indicated by a white region N31, and the wavelength conversion layer 191 (lower chuck 141) is indicated by a black region N32. In this case, the image captured by the light detection unit 204 shows a striped pattern of grinding marks on the trim portion Wt of the peripheral edge portion We. However, since the S / N ratio can be improved radially inside and outside the outer edge Wf of the first wafer W, the outer edge Wf of the first wafer W can be properly detected. Moreover, an imaging unit with a conventional configuration can be used for the upper imaging unit 151.

[0101] In the bonding device 41 of the above embodiment, a wavelength conversion layer 191 may be provided as a light adjustment layer on the outer periphery of the upper surface of the base 121 of the position adjustment mechanism 120, and the detection unit 122 may have the same configuration as the upper imaging unit 151 shown in Fig. 10. Alternatively, a reflection suppression layer 250 may be provided as a light adjustment layer on the outer periphery of the upper surface of the base 121, and the detection unit 122 may have the same configuration as the upper imaging unit 151 shown in Fig. 12.

[0102] In either case, in St3, the outer edge Sf of the second wafer S can be detected and the notch portion Sn can be appropriately detected based on the image obtained by the light detection unit 204 in the detection unit 122. Similarly, in St8, the outer edge Wf of the first wafer W can be detected and the notch portion Wn can be appropriately detected based on the image obtained by the light detection unit 204 in the detection unit 122.

[0103] The configuration of the upper imaging unit 151 and the wavelength conversion layer 191 or the antireflection layer 250 as the light adjustment layer in the lower chuck 141 in the above embodiment can also be applied to devices other than the bonding device 41. For example, in an exposure device that exposes a wafer to light, a wafer prober that inspects a wafer, a dicing device that divides a wafer into a plurality of chips, and the like, it is necessary to detect the outer edge of the wafer, and the outer edge of the wafer can be appropriately detected using the upper imaging unit 151 and the wavelength conversion layer 191 or the antireflection layer 250.

[0104] In the above embodiment, the joining device 41 has been described as an example in which the upper chuck 140 is disposed on the top and the lower chuck 141 is disposed on the bottom. However, the upper chuck 140 and the lower chuck 141 may be disposed upside down.

[0105] In the joining device 41 of the above embodiment, the upper chuck 140 is configured to be rotatable, but the lower chuck 141 may be rotatable, or both the upper chuck 140 and the lower chuck 141 may be rotatable. Similarly, in the X-axis direction, the Y-axis direction, and the Z-axis direction, the lower chuck 141 is configured to be movable in the X-axis direction, the Y-axis direction, and the Z-axis direction, but the upper chuck 140 may be movable, or both the upper chuck 140 and the lower chuck 141 may be movable.

[0106] The embodiments disclosed herein should be considered to be illustrative in all respects and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims. For example, the components of the above-described embodiments may be arbitrarily combined. Such an arbitrary combination naturally provides the functions and effects of each of the components involved in the combination, and also provides other functions and effects that are apparent to those skilled in the art from the description of this specification.

[0107] Furthermore, the effects described herein are merely descriptive or exemplary and are not limiting. In other words, the technology according to the present disclosure may achieve other effects that are apparent to those skilled in the art from the description of this specification, in addition to or in place of the above-described effects.

[0108] 41 Bonding device 141 Lower chuck 191 Wavelength conversion layer 201 Light irradiation unit 204 Light detection unit L1 Irradiated light L2 Reflected light L3 Reflected light W First wafer We Periphery S Second wafer T Overlapped wafer

Claims

1. A substrate processing apparatus for processing a substrate, comprising: a substrate holding section for holding the substrate; a light irradiation section for irradiating a peripheral portion of the substrate held by the substrate holding section with irradiated light; a light adjustment layer provided at least on the outer periphery of the substrate holding section for changing a state of the irradiated light; and a light detection section for receiving at least one of reflected light from the substrate held by the substrate holding section and reflected light from the light adjustment layer.

2. The substrate processing apparatus according to claim 1, wherein the light adjustment layer is a wavelength conversion layer that converts the wavelength of the irradiated light.

3. The substrate processing apparatus according to claim 2, further comprising a filter provided between said substrate holder and said light detector for cutting out light reflected from said substrate.

4. The substrate processing apparatus according to claim 2, further comprising a filter provided between said substrate holding section and said light detecting section, said filter cutting out light reflected from said light adjusting layer.

5. The substrate processing apparatus according to claim 2, wherein the wavelength of the irradiated light is shorter than the wavelength of the reflected light from the light adjustment layer.

6. The substrate processing apparatus according to claim 2, wherein the wavelength of the irradiated light is a wavelength that is not transmitted through the substrate.

7. The substrate processing apparatus according to claim 1, wherein the light adjustment layer is a reflection suppressing layer that suppresses reflection of the irradiation light emitted from the light irradiation unit.

8. A substrate processing apparatus according to any one of claims 1 to 7, wherein the light adjustment layer is provided so as to overlap, in a plan view, the peripheral portion of the substrate held by the substrate holding portion.

9. The substrate processing apparatus of any one of claims 1 to 7, wherein the substrate processing apparatus is a bonding apparatus for bonding a first substrate and a second substrate, the substrate being the first substrate, the substrate holding part being a first substrate holding part for holding the first substrate, and the bonding apparatus further comprising: a second substrate holding part for holding the second substrate, the second substrate holding part being provided above or below the first substrate holding part; and an abutment member for abutting a center of the first substrate against a center of the second substrate.

10. The substrate processing apparatus of claim 9, wherein at least a portion of the peripheral edge of the first substrate is removed.

11. A substrate processing method for processing a substrate, comprising: (a) a step of holding the substrate with a substrate holding section; (b) a step of irradiating a peripheral portion of the substrate held by the substrate holding section with irradiation light from a light irradiation section; (c) a step of irradiating the irradiation light onto a light adjustment layer provided on at least the outer periphery of the substrate holding section, thereby changing the state of the irradiation light; (d) a step of receiving at least one of the light reflected from the substrate held by the substrate holding section and the light reflected from the light adjustment layer by a light detection section; and (e) a step of detecting the peripheral portion of the substrate based on the contrast of the reflected light received by the light detection section.

12. The substrate processing method according to claim 11, wherein the light adjustment layer is a wavelength conversion layer that converts the wavelength of the irradiated light, and in step (d), the wavelength of the reflected light from the substrate and the wavelength of the reflected light from the light adjustment layer are different, and in step (e), the peripheral portion of the substrate is detected based on a contrast between the reflected light from the substrate and the reflected light from the light adjustment layer.

13. A substrate processing method as described in claim 12, wherein in step (d), a filter provided between the substrate holding unit and the light detection unit cuts out reflected light from the substrate, and the light detection unit receives only reflected light from the light adjustment layer; and in step (e), the peripheral edge of the substrate is detected based on the contrast of reflected light from the light adjustment layer in a state in which there is no reflected light from the substrate.

14. A substrate processing method as described in claim 12, wherein in step (d), a filter provided between the substrate holding portion and the light detection portion cuts out reflected light from the light adjustment layer, and the light detection portion receives only reflected light from the substrate; and in step (e), a peripheral portion of the substrate is detected based on the contrast of reflected light from the substrate in the absence of reflected light from the light adjustment layer.

15. The substrate processing method according to claim 12, wherein in step (d), the wavelength of the irradiating light is shorter than the wavelength of the reflected light from the light adjusting layer.

16. The substrate processing method according to claim 12, wherein the wavelength of the irradiated light is a wavelength that is not transmitted through the substrate, and in the step (b), the irradiated light is reflected by the substrate.

17. A substrate processing method as described in claim 11, wherein the light adjustment layer is a reflection suppression layer that suppresses reflection of the irradiated light irradiated from the light irradiation section, and in step (d), the light adjustment layer suppresses reflection of the irradiated light, and the light detection section receives only the reflected light from the light adjustment layer, and in step (e), the peripheral edge of the substrate is detected based on the contrast of the reflected light of the substrate in a state in which there is no reflected light from the light adjustment layer.

18. A substrate processing method according to any one of claims 11 to 17, wherein the light adjustment layer is provided so as to overlap, in a plan view, the peripheral portion of the substrate held by the substrate holding portion.

19. A substrate processing method according to any one of claims 11 to 17, wherein the processing of the substrate is a process of bonding a first substrate and a second substrate, the substrate is the first substrate, the substrate holding part is a first substrate holding part that holds the first substrate, and in step (e), a peripheral edge of the first substrate is detected, the substrate processing method further comprising: (f) a step of holding the second substrate with a second substrate holding part provided above or below the first substrate holding part, and (g) abutting a center of the first substrate and a center of the second substrate with an abutting member, thereby bonding the first substrate and the second substrate.

20. The method of claim 19, wherein at least a portion of a peripheral edge of the first substrate is removed.

Images