Thin film forming method, electric / electronic device using same, and substrate processing apparatus

Abstract

The present invention provides an electric / electronic device comprising: a substrate; a thin film layer formed on the substrate; and a first encapsulation layer formed on the thin film layer, wherein the first encapsulation layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate. The present invention aims at providing an electric / electronic device, a method for manufacturing same, and a substrate processing apparatus for forming same, in which, by forming an encapsulation layer, the electric / electronic device having the effect of blocking moisture or oxygen introduced from the outside through the upper surface, side surface, and lower surface of the electric / electronic device.

Description

Thin film formation method, electric and electronic devices using the same, and substrate processing device

[0001] The present invention relates to a thin film forming method, an electric and electronic device using the same, and a substrate processing device.

[0002] Electrical and electronic devices are vulnerable to moisture and oxygen. In particular, as the performance of organic light-emitting devices (OLEDs), inorganic light-emitting devices (micro LEDs), and solar cells increases, the risk of their performance deteriorating due to the influence of moisture and oxygen entering from outside sources increases.

[0003] Accordingly, there have been various attempts to prevent moisture and oxygen from penetrating, and recently, there has been a trend toward using an encapsulation layer made of an inorganic or organic film to prevent moisture and oxygen from penetrating into the device.

[0004] Meanwhile, when mass-producing electrical and electronic components using a mother glass, the encapsulation layer is applied only to the upper surface, so there is a problem that the electrical and electronic components produced individually after cutting the mother glass are affected by moisture or oxygen flowing in from the side and bottom where the encapsulation layer is not formed.

[0005] The present invention is designed to solve the above-mentioned conventional problems, and the purpose of the present invention is to provide an electronic and electrical element capable of blocking moisture or oxygen from entering from the outside through the upper surface, side surface, and lower surface of an electric and electronic element by forming a sealing layer covering the upper surface, side surface, and lower surface of a substrate having an electronic element, a method for manufacturing the same, and a substrate processing device for forming the same.

[0006] In order to achieve the above object, the present invention provides an electrical and electronic device comprising: a substrate; a thin film layer provided on the substrate; and a first sealing layer provided on the thin film layer, wherein the first sealing layer covers a portion of the lower surface of the substrate, an upper surface of the substrate, and a side surface of the substrate.

[0007] Furthermore, another portion of the lower surface of the substrate may be exposed to the outside.

[0008] Furthermore, the present invention provides an electrical and electronic device that further includes a second sealing layer provided on the first sealing layer, wherein the second sealing layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate.

[0009] Furthermore, the present invention provides an electrical and electronic device in which the first sealing layer includes an oxide film containing silicon (Si) and the second sealing layer includes a nitride film containing silicon (Si).

[0010] Furthermore, the thickness of the first sealing layer covering a portion of the lower surface of the substrate may become thinner toward the inside of the substrate.

[0011] Furthermore, the present invention provides an electrical and electronic device in which the first sealing layer includes a first portion provided on the upper surface of the substrate, a second portion provided on the side surface of the substrate, a third portion provided on the lower surface of the substrate, and a fourth portion provided at an edge of the substrate between the second portion and the third portion, and the thickness of the third portion becomes thinner toward the inside of the substrate.

[0012] Furthermore, the present invention provides an electrical and electronic device in which the thickness of the fourth portion is thicker than the thicknesses of the second portion and the third portion, and thinner than the thickness of the first portion.

[0013] Furthermore, the present invention provides a method for forming a thin film by being mounted on a susceptor provided inside a chamber, the method comprising: preparing a substrate on the susceptor; forming a thin film layer on the substrate; and forming a first sealing layer on the thin film layer, wherein the first sealing layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate.

[0014] Furthermore, another portion of the lower surface of the substrate may be exposed to the outside.

[0015] Furthermore, the present invention provides a method for forming a thin film in which the distance between the substrate and the susceptor is in the range of 0.1 mm to 10 mm, and the first sealing layer is formed using an atomic layer deposition (ALD) method.

[0016] Furthermore, the present invention provides a method for forming a thin film in which the distance between the substrate and the susceptor is in the range of 2.5 mm to 10 mm, and the first sealing layer is formed using a chemical vapor deposition method (CVD).

[0017] Furthermore, the present invention provides a method for forming a thin film, which further includes a step of forming a second encapsulating layer on the first encapsulating layer, wherein the second encapsulating layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate.

[0018] Furthermore, the present invention provides a method for forming a thin film, wherein the first sealing layer is formed using atomic layer deposition (ALD) and the second sealing layer is formed using chemical vapor deposition (CVD).

[0019] Furthermore, the present invention provides a substrate processing device including a chamber; a susceptor provided inside the chamber and configured to receive a substrate; and a spacing member supporting a central region of the substrate and capable of spacing the substrate from the susceptor by 1 mm or more.

[0020] Furthermore, the spacer member can support the substrate so that a portion of the lower surface of the substrate is exposed to the outside, thereby allowing a portion of the lower surface of the substrate to be deposited.

[0021] Furthermore, the present invention provides a substrate processing device in which the height of the separation member can be adjusted.

[0022] Furthermore, the present invention provides a substrate processing device in which the upper surface of the separation member is in contact with the lower surface of the substrate.

[0023] Furthermore, the present invention provides a substrate processing device in which the area of ​​the upper surface of the separation member is smaller than the area of ​​the lower surface of the substrate.

[0024] Furthermore, the present invention provides a substrate processing device in which the entire upper surface of the separation member is in contact with the lower surface of the substrate.

[0025] Furthermore, the present invention provides a substrate processing device in which the separation member is anodized.

[0026] Furthermore, the present invention provides a substrate processing device in which the substrate further includes an edge region provided on the outside of the central region, and the edge region of the substrate does not contact the separation member.

[0027] According to the present invention as described above, the following effects are achieved.

[0028] According to one embodiment of the present invention, by means of a sealing layer provided to cover the upper surface, side surfaces, and lower surface of the substrate, moisture or oxygen flowing in from the upper surface, side surfaces, and lower surface of the substrate can be blocked, thereby preventing the performance of an electronic device provided on the upper surface of the substrate from being deteriorated.

[0029] According to one embodiment of the present invention, by appropriately controlling the gap between the substrate and the susceptor during the process of forming the sealing layer by plasma-enhanced chemical vapor deposition (PECVD) or plasma-enhanced atomic layer deposition (PEALD), an optimal sealing layer for blocking moisture or oxygen can be implemented.

[0030] The effects of the present invention are not limited to the effects mentioned above, and other effects not mentioned will be clearly understood by those skilled in the art from the description below.

[0031] Figure 1 is a cross-sectional view of an electrical and electronic device according to one embodiment of the present invention.

[0032] Figures 2a to 2c are cross-sectional views illustrating a manufacturing process of an electrical and electronic device according to one embodiment of the present invention.

[0033] Figure 3 is a cross-sectional view of an electrical and electronic device according to another embodiment of the present invention.

[0034] Figures 4a to 4e are cross-sectional views illustrating a manufacturing process of an electrical and electronic device according to another embodiment of the present invention.

[0035] The advantages and features of the present invention, and the methods for achieving them, will become clearer with reference to the embodiments described in detail below together with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms. These embodiments are provided solely to ensure that the disclosure of the present invention is complete and to fully inform those skilled in the art of the scope of the invention, and the present invention is defined solely by the scope of the claims.

[0036] The shapes, sizes, ratios, angles, numbers, etc. disclosed in the drawings for explaining embodiments of the present invention are illustrative and are not limited to the matters illustrated in the drawings. Like reference numerals refer to like components throughout the specification. In addition, in describing the present invention, if a detailed description of a related known technology is judged to unnecessarily obscure the gist of the present invention, the detailed description thereof will be omitted. When the terms “includes,” “has,” and “consists of” are used in this specification, other parts may be added unless “only” is used. When a component is expressed in the singular, it includes a case where the plural is included unless there is a specifically explicit description.

[0037] When interpreting a component, it is interpreted as including the error range even if there is no separate explicit description.

[0038] When describing a positional relationship, for example, when the positional relationship between two parts is described as 'on top of', 'upper part of', 'lower part of', 'next to', etc., one or more other parts may be located between the two parts, unless 'right away' or 'directly' is used.

[0039] When describing a temporal relationship, for example, when the temporal continuity is described as 'after', 'following', 'next to', 'before', etc., it can also include cases where it is not continuous, as long as 'right away' or 'directly' is not used.

[0040] While terms like "first" and "second" are used to describe various components, these components are not limited by these terms. These terms are merely used to distinguish one component from another. Therefore, a "first" component referred to below may also be a "second" component within the technical scope of the present invention.

[0041] The individual features of the various embodiments of the present invention can be partially or wholly combined or combined with each other, and various technical linkages and operations are possible, and each embodiment can be implemented independently of each other or implemented together in a related relationship.

[0042] Hereinafter, a preferred embodiment of the present invention will be described in detail with reference to the drawings.

[0043] Figure 1 is a cross-sectional view of an electrical and electronic device according to one embodiment of the present invention.

[0044] As can be seen in FIG. 1, an electrical and electronic device according to one embodiment of the present invention comprises a substrate (110), a thin film layer (120), and a first sealing layer (210).

[0045] The above substrate (110) may be made of, for example, any one of glass, flexible plastic, and silicon (Si) wafer, but is not limited thereto.

[0046] The thin film layer (120) may be any one of an organic light emitting device (OLED), an inorganic light emitting device (Micro LED), and a solar cell. For example, if the thin film layer (120) is an organic light emitting device (OLED), it may include an anode, an organic light emitting layer, and a cathode. As another example, if the thin film layer (120) is an inorganic light emitting device (Micro LED), it may include an anode, a P-type doped semiconductor layer, an intrinsic semiconductor layer, an N-type doped semiconductor layer, and a cathode. As another example, if the thin film layer (120) is a solar cell, it may include a solar cell. The solar cell may include, as the case may, a perovskite compound, a III-V group compound, or an N-type, i-type, and P-type semiconductor layer. Meanwhile, the above thin film layer (120) is not limited thereto, and can be applied in various fields requiring encapsulation of the upper surface, side surface, or rear surface of the substrate (110) in light of knowledge in the art.

[0047] Meanwhile, in FIG. 1, the length of the thin film layer (120) in the first direction, for example, the horizontal direction, is expressed as being the same as the length of the substrate (110) in the horizontal direction, but this is not limited thereto, and the length of the thin film layer (120) in the horizontal direction may be different from the length of the substrate (110) in the horizontal direction.

[0048] According to one embodiment of the present invention, the first sealing layer (210) is provided on the substrate (110) and the thin film layer (120). Specifically, the first sealing layer (210) covers the upper and side surfaces of the substrate (110) and the thin film layer (120), and may cover a portion of the lower surfaces of the substrate (110) and the thin film layer (120).

[0049] The first sealing layer (210) may be formed using chemical vapor deposition (CVD) or atomic layer deposition (ALD). Furthermore, the first sealing layer (210) may be formed using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD).

[0050] When the first sealing layer (210) is formed using the chemical vapor deposition (CVD) method, the first sealing layer (210) can be formed on the upper surface, side surface, and lower surface of the substrate (110) at a relatively fast speed, and when the first sealing layer (210) is formed using the atomic layer deposition (ALD) method, a high moisture permeability effect and oxygen blocking effect can be obtained even with a relatively thin thickness due to the uniform film quality.

[0051] The first sealing layer (210) may be formed of an oxide containing silicon (Si) or a nitride containing silicon (Si). For example, the first sealing layer (210) may be formed of silicon oxide (SiO2) and / or silicon nitride (SiN). x ) can be formed as a single layer or multiple layers. However, it is not limited thereto and can be formed using various materials known in the art.

[0052] The above first sealing layer (210) is composed of a first part (210a), a second part (210b), a third part (210c), and a fourth part (210d).

[0053] The first portion (210a) is formed on the upper surface of the substrate (110) and the thin film layer (120) to block the upper surface of the substrate (110) or the upper surface of the thin film layer (120) from being exposed to the outside. The first portion (210a) has a first thickness (t1). In this case, the first thickness (t1) means the shortest distance from the upper surface of the thin film layer (120) to the upper surface of the first sealing layer (210).

[0054] The second portion (210b) is formed by being continuously connected to one end and the other end of the first portion (210a), respectively, and is formed on the side surface of the substrate (110) and the thin film layer (120), thereby blocking the side surface of the substrate (100) or the side surface of the thin film layer (120) from being exposed to the outside. The second portion (210b) has a second thickness (t2). In this case, the second thickness (t2) means the shortest distance from one side surface of the substrate (110) or the thin film layer (120) to the side surface of the first sealing layer (210).

[0055] For example, when the first sealing layer (210) is formed using the chemical vapor deposition (PECVD) method, the second thickness (t2) of the second portion (210b) may be 45% to 60%, preferably 50%, of the first thickness (t1) of the first portion (210a). In this case, the second thickness (t2) of the second portion (210b) may be, for example, in the range of 0.1 μm to 1.5 μm.

[0056] According to one embodiment of the present invention, the second portion (210b) is formed with a thickness ranging from 0.1 μm to 1.5 μm using the chemical vapor deposition (CVD) method, so that the first sealing layer (210) has a thickness of 5x10 on the side of the substrate (110). -4 g / m 2A water vapor transmission rate (WVTR) of less than 1 day can be achieved. Therefore, moisture flowing into the side of the substrate (110) and the side of the thin film layer (120) can be blocked.

[0057] In this case, the water vapor transmission rate (WVTR) is the rate of change of a unit area (1 m) over 24 hours (1 day). 2 ) can be defined as the amount of moisture (g) absorbed per unit area (m) of the first sealing layer (210) for 1 day. For example, in this specification, the water vapor transmission rate (WVTR) is defined as the amount of moisture absorbed per unit area (m) of the first sealing layer (210) for 1 day. 2 ) can be defined as the amount of moisture (g) passing through it.

[0058] As another example, when the first sealing layer (210) is formed using atomic layer deposition (ALD), the second thickness (t2) of the second portion (210b) may be 90% to 97%, preferably 95%, of the first thickness (t1) of the first portion (210a). In this case, the second thickness (t2) of the second portion (210b) may be, for example, in the range of 0.01 μm to 0.15 μm.

[0059] According to another embodiment of the present invention, the second portion (210b) is formed with a thickness ranging from 0.01 μm to 0.15 μm using the atomic layer deposition (ALD) method, so that the first sealing layer (210) has a thickness of 5x10 on the side of the substrate (110). -4 g / m 2 A moisture permeability of less than one day can be achieved. Therefore, moisture flowing into the side of the substrate (110) and the side of the thin film layer (120) can be blocked.

[0060] The third portion (210c) may be provided on the lower surface of the substrate (110) to block a portion of the lower surface of the substrate (110) from being exposed to the outside. Specifically, the third portion (210c) may be provided to cover a certain range from one end of the lower surface of the substrate (110), for example, the right end, thereby blocking moisture or air from penetrating through one end of the lower surface of the substrate (110), for example, a corner portion of the substrate (110). The thickness of the third portion (210c) may gradually decrease inward from one end of the lower surface of the substrate (110).

[0061] According to one embodiment of the present invention, the third portion (210c) may be provided with a first point (P1) having a third thickness (t3) that is the same thickness as the second thickness (t2) within a point spaced apart from one end of the lower surface of the substrate (110) by 0.5 mm or more and within a range of 1.5 mm. By being formed in this way, moisture and oxygen flowing in from the lower surface of the substrate (110) or the side surface of the substrate (110) can be effectively blocked by the first sealing layer (210) covered with the third thickness (t3) at the first point (P1).

[0062] For example, when the first sealing layer (210) is formed using the chemical vapor deposition (CVD) method, the third thickness (t3) of the third portion (210c) may be 45% to 60%, preferably 50%, of the first thickness (t1) of the first portion (210a). In this case, the third thickness (t3) of the third portion (210c) may be, for example, in the range of 0.01 μm to 0.15 μm.

[0063] As another example, when the first sealing layer (210) is formed using atomic layer deposition (ALD), the third thickness (t3) of the third portion (210c) may be 90% to 97%, preferably 95%, of the first thickness (t1) of the first portion (210a). In this case, the third thickness (t3) of the third portion (210c) may be, for example, in the range of 0.1 μm to 1.5 μm.

[0064] The fourth portion (210d) is provided to cover the edge area of ​​the lower surface of the substrate (110), and is provided between the second portion (210b) and the third portion (210c) to be formed continuously with the third portion (210b) and the third portion (210c). Accordingly, the second portion (210b), the fourth portion (210d), and the third portion (210c) can be provided in sequence along the side surface and lower surface of the substrate (110).

[0065] Since the fourth portion (210d) is provided to cover the corner portion of the substrate (110), it may be formed to be larger than the second portion (210b) and the third portion (210c). Specifically, it may be formed to have a thickness greater than the second thickness (t2) of the second portion (210b) and the third thickness (t3) of the third portion (210c). In this case, the thickness of the fourth portion (210d) may be defined as the distance from the corner portion of the substrate (110) to the outer surface of the fourth portion (210d).

[0066] According to one embodiment of the present invention, since the first sealing layer (210) is provided to cover the upper surface and side surfaces of the substrate (110) and a portion of the lower surface of the substrate (110), moisture or oxygen flowing in from the outside through the upper surface and side surfaces of the substrate (110) and the corner portion of the lower surface of the substrate (110) can be blocked. Accordingly, the problem of the performance of the thin film layer (120) being deteriorated by the moisture or oxygen can be prevented.

[0067] Figures 2a to 2c are cross-sectional views illustrating a manufacturing process of a thin film provided in an electric / electronic device according to one embodiment of the present invention.

[0068] First, as can be seen in FIG. 2a, a substrate processing device according to an embodiment of the present invention comprises a chamber (not shown), a susceptor (300) provided inside the chamber (not shown) to receive a substrate (110), and a spacing member (400) that separates the substrate (110) and the susceptor (300) by a predetermined distance. In this case, the susceptor (300) may be prepared inside a chamber (not shown) in which a space for processing a receiving substrate is formed, and the spacing member (400) may be formed on the susceptor (300).

[0069] In this case, the spacer (400) may be formed of any one of aluminum (Al), magnesium (Mg), titanium (Ti), and zinc (Zn). In addition, the spacer (400) may be anodized. In this case, the anodizing treatment means, for example, forming an oxidized thin film on the surface of the spacer (400) by oxidizing the surface of the spacer (400). For example, the surface of the spacer (400) may be formed of a film of oxidized aluminum (Al) through the anodizing treatment.

[0070] Furthermore, a substrate (110) may be provided on the susceptor (300) on which the spacer (400) is formed. Specifically, the substrate (110) may be prepared on the spacer (400) so that the upper surface of the spacer (400) can contact the substrate (110). In this case, the thin film layer (120) described above in FIG. 1 is provided on the substrate (110).

[0071] The area of ​​the above-mentioned spacer (400) may be smaller than the area of ​​the substrate (110). Specifically, the area of ​​the upper surface of the above-mentioned spacer (400) may be smaller than the area of ​​the lower surface of the substrate (110). Accordingly, the above-mentioned spacer (400) may support the central region of the substrate (110), and the edge region provided outside the central region of the substrate (110) may not be separately supported.

[0072] According to one embodiment of the present invention, when the substrate (110) is prepared on the spacer (400), the entire upper surface of the spacer (400) can be in contact with the substrate (110). Since the entire upper surface of the spacer (400) is in contact with the substrate (110), heat lost from the substrate (110) can be minimized.

[0073] One end of the substrate (110), for example, the left end, may be spaced apart from one end of the spacer (400), for example, the left end, by a first length (G).

[0074] According to one embodiment of the present invention, the first length (G) may be in the range of 1 mm to 5 mm. When the first length (G) is less than 1 mm, in the process of forming the first sealing layer (210) and / or the second sealing layer (220) on the substrate (110), a first sealing layer (or second sealing layer) having a thickness greater than a certain thickness may not be formed on the lower surface of the substrate (110). When the first length (G) exceeds 5 mm, the area where the lower surface of the substrate (110) is exposed increases, so the film quality of the sealing layer (first sealing layer (210) or second sealing layer (220)) formed on the lower surface of the substrate (110) may deteriorate due to heat lost from the exposed lower surface of the substrate (110).

[0075] The substrate (110) and the susceptor (300) may be spaced apart by a first height (H1). Specifically, the lower surface of the substrate (110) and the upper surface of the susceptor (300) may be spaced apart by the first height (H1).

[0076] Next, as can be seen in FIG. 2b, the first sealing layer (210) is formed to cover the upper and side surfaces of the substrate (110) and a portion of the lower surface of the substrate (110). In this case, as described above with reference to FIG. 1, the first sealing layer (210) includes a first portion (210a), a second portion (210b), a third portion (220c), and a fourth portion (220d). Meanwhile, since the first sealing layer (210) is the same as that described with reference to FIG. 1, a description of the repeated contents will be omitted.

[0077] For example, when the first sealing layer (210) is formed using a chemical vapor deposition method (CVD), the first height (H1) may be in the range of 2.5 mm to 10 mm.

[0078] In the case of using the chemical vapor deposition (CVD) method, when the first height (H1) is less than 2.5 mm, the third thickness (t3) of the third portion (210c) at the first point (P1) may be formed to be 45% to 60%, preferably less than 50%, of the first thickness (t1) of the first portion (210a). In this case, moisture or oxygen introduced through the first sealing layer (210) may not be properly blocked. Accordingly, the performance of the thin film layer (120) provided on the substrate (110) may be degraded.

[0079] Meanwhile, when the first height (H1) exceeds 10 mm, the distance between the substrate (110) and the susceptor (300) increases, so that the amount of heat energy lost through the lower surface of the substrate (110) increases, and thus the film quality of the first sealing layer (210) may deteriorate.

[0080] As another example, when the first sealing layer (210) is formed using atomic layer deposition (ALD), the first height (H1) may be in the range of 0.1 mm to 10 mm.

[0081] In the case where the above-described atomic layer deposition (ALD) method is used, when the first height (H1) is less than 0.1 mm, the third thickness (t3) of the third portion (210c) at the first point (P1) may be formed to be 90% to 97%, preferably less than 95%, of the first thickness (t1) of the first portion (210a). In this case, moisture or oxygen introduced through the first sealing layer (210) may not be properly blocked. Accordingly, the performance of the thin film layer (120) provided on the substrate (110) may be degraded.

[0082] Meanwhile, when the first height (H1) exceeds 10 mm, the distance between the substrate (110) and the susceptor (300) increases, so that the amount of heat energy lost through the lower surface of the substrate (110) increases, and thus the film quality of the first sealing layer (210) may deteriorate.

[0083] Finally, as can be seen in FIG. 2c, by separating the substrate (110) on which the first sealing layer (210) is formed from the susceptor (300) and the separation member (400), an electric and electronic device according to an embodiment of the present invention can be implemented.

[0084] Fig. 3 is a cross-sectional view of an electrical / electronic device according to another embodiment of the present invention. Meanwhile, the electrical / electronic device according to the embodiment of Fig. 3 is identical to the electrical / electronic device according to the embodiment of Fig. 1 except for the configuration of the second sealing layer, and therefore, the following description will focus on the different configurations.

[0085] As can be seen in FIG. 3, an electrical and electronic device according to another embodiment of the present invention comprises a substrate (110), a thin film layer (120), a first sealing layer (210), and a second sealing layer (220).

[0086] According to another embodiment of the present invention, the second sealing layer (220) is formed on the upper surface of the first sealing layer (210). Specifically, the second sealing layer (220) may be provided to cover a portion of the upper surface, side surfaces, and lower surface of the first sealing layer (210). Accordingly, the second sealing layer (220) may cover the upper and side surfaces of the substrate (110) and the thin film layer (120), and may cover a portion of the lower surface of the substrate (110).

[0087] The first sealing layer (210) and the second sealing layer (220) are formed with a fourth thickness (t4) on the substrate (110) and a fifth thickness (t5) on the side surface of the substrate (110), and on the lower surface of the substrate (110), the thicknesses of the first sealing layer (210) and the second sealing layer (220) may gradually decrease in an inward direction from one end of the lower surface of the substrate (110).

[0088] According to another embodiment of the present invention, a first point (P1) having a sixth thickness (t6) equal to the fifth thickness (t5) of the first sealing layer (210) and the second sealing layer (220) may be provided within a point spaced apart from one end of the lower surface of the substrate (110) by 0.5 mm or more and within a range of 1.5 mm. By forming in this manner, moisture and oxygen flowing in from the lower surface of the substrate (110) or the side surface of the substrate (110) can be effectively blocked by the first sealing layer (210) and the second sealing layer (220) covered with the sixth thickness (t6) at the first point (P1).

[0089] The second sealing layer (220) may be formed using chemical vapor deposition (CVD) or atomic layer deposition (ALD). Furthermore, the second sealing layer (220) may be formed using plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD).

[0090] When the second sealing layer (220) is formed using the chemical vapor deposition (CVD) method, the second sealing layer (220) can be formed on the upper surface, side surface, and lower surface of the substrate (110) at a relatively fast speed, and when the second sealing layer (220) is formed using the atomic layer deposition (ALD) method, a high moisture permeability effect and oxygen blocking effect can be obtained even with a relatively thin thickness due to the uniform film quality.

[0091] The second sealing layer (220) may be formed of an oxide containing silicon (Si) or a nitride containing silicon (Si). For example, the second sealing layer (210) may be formed of silicon oxide (SiO2) and / or silicon nitride (SiN). x ) can be formed as a single layer or multiple layers. However, it is not limited thereto and can be formed using various materials known in the art.

[0092] For example, when the second sealing layer (220) is formed using the chemical vapor deposition (CVD) method, the thickness of the side surface of the second sealing layer (220) may be 45% to 60%, preferably 50%, of the thickness of the upper surface of the second sealing layer (220). In this case, the thickness of the side surface of the second sealing layer (220) may be, for example, in the range of 0.1 μm to 1.5 μm.

[0093] As another example, when the second sealing layer (220) is formed using atomic layer deposition (ALD), the thickness of the side surface of the second sealing layer (220) may be 90% to 97%, preferably 95%, of the thickness of the upper surface of the second sealing layer (220). In this case, the thickness of the side surface of the second sealing layer (220) may be, for example, in the range of 0.01 μm to 0.15 μm.

[0094] According to another embodiment of the present invention, the first sealing layer (210) includes silicon oxide (SiO2), and the second sealing layer (220) includes silicon nitride (SiN x ) can be formed. Meanwhile, without being limited thereto, the first sealing layer (210) may be formed of silicon nitride (SiN x ), and the second sealing layer (220) may include silicon oxide (SiO2). By being formed in this manner, the first sealing layer (210) and the second sealing layer (220) can effectively block moisture or oxygen introduced into the substrate (110) and the thin film layer (120).

[0095] FIGS. 4A to 4E are cross-sectional views illustrating a manufacturing process of a thin film provided in an electrical / electronic device according to another embodiment of the present invention. Meanwhile, the electrical / electronic device according to the embodiments of FIGS. 4A to 4E is identical to the electrical / electronic device according to the embodiments of FIGS. 2A to 2C except for the configuration of the second sealing layer, and therefore, the following description will focus on the different configurations.

[0096] First, as can be seen in FIG. 4a, a substrate processing device according to another embodiment of the present invention comprises a chamber (not shown), a susceptor (300) provided inside the chamber (not shown) to accommodate a substrate (110), and a spacing member (400) that separates the substrate (110) and the susceptor (300) from each other by a predetermined distance. In this case, a substrate (110) having a thin film layer (120) formed on the susceptor (300) on which the spacing member (400) is formed can be prepared. Meanwhile, since the embodiment of FIG. 4a is the same as the embodiment of FIG. 2a, a repeated description will be omitted.

[0097] Next, as can be seen in Fig. 4b, the first sealing layer (210) is formed to cover the upper and side surfaces of the substrate (110) and a portion of the lower surface of the substrate (110). Meanwhile, the embodiment of Fig. 4b is the same as the embodiment of Fig. 2b, so a repeated description will be omitted.

[0098] Next, as can be seen in Fig. 4c, before forming the second sealing layer (220) on the first sealing layer (210), the height of the spacer (400) can be adjusted. Specifically, by adjusting the height of the spacer (400), the distance between the lower surface of the first sealing layer (210) and the upper surface of the susceptor (300) can be adjusted.

[0099] In this case, the distance between the lower surface of the first sealing layer (210) and the upper surface of the susceptor (300) can be specifically defined as a second height (H2), which is the distance between the lower surface of the first sealing layer (210) and the upper surface of the susceptor (300) at the first point (p1).

[0100] Next, as can be seen in FIG. 4d, the second encapsulating layer (220) can be formed on the first encapsulating layer (210). Specifically, the second encapsulating layer (220) is formed to cover the upper surface, side surfaces, and lower surface of the first encapsulating layer (210).

[0101] For example, when the second sealing layer (220) is formed using a chemical vapor deposition method (CVD), the second height (H2) may be in the range of 2.5 mm to 10 mm.

[0102] In the case where the chemical vapor deposition (CVD) method is used, when the second height (H2) is less than 2.5 mm, the thickness of the lower surface of the second sealing layer (220) at the first point (P1) may be formed to be 45% to 60%, preferably less than 50%, of the thickness of the upper surface of the second sealing layer (220). In this case, moisture or oxygen introduced through the second sealing layer (220) may not be properly blocked. Accordingly, the performance of the thin film layer (120) provided on the substrate (110) may be degraded.

[0103] Meanwhile, when the second height (H2) exceeds 10 mm, the distance between the substrate (110), the first sealing layer (210), and the susceptor (300) increases, so that the amount of heat energy lost through the lower surface of the substrate (110) increases, and thus the film quality of the second sealing layer (220) may deteriorate.

[0104] As another example, when the second sealing layer (220) is formed using atomic layer deposition (ALD), the second height (H2) may be in the range of 0.1 mm to 10 mm.

[0105] In the case of using the above-described atomic layer deposition (ALD) method, when the second height (H2) is less than 0.1 mm, the thickness of the lower surface of the second sealing layer (220) at the first point (P1) may be formed to be 90% to 97%, preferably less than 95%, of the thickness of the upper surface of the second sealing layer (220). In this case, moisture or oxygen introduced through the second sealing layer (220) may not be properly blocked. Accordingly, the performance of the thin film layer (120) provided on the substrate (110) may be degraded.

[0106] Meanwhile, when the second height (H2) exceeds 10 mm, the distance between the substrate (110), the first sealing layer (210), and the susceptor (300) increases, so that the amount of heat energy lost through the lower surface of the substrate (110) increases, and thus the film quality of the second sealing layer (220) may deteriorate.

[0107] Finally, as can be seen in FIG. 4e, if the substrate (110) on which the first sealing layer (210) and the second sealing layer (220) are formed is separated from the susceptor (300) and the separation member (400), an electric and electronic device according to another embodiment of the present invention can be implemented.

[0108] Although the embodiments of the present invention have been described in more detail with reference to the attached drawings, the present invention is not necessarily limited to these embodiments, and various modifications may be implemented without departing from the technical spirit of the present invention. Therefore, the embodiments disclosed in the present invention are not intended to limit the technical spirit of the present invention, but to explain it, and the scope of the technical spirit of the present invention is not limited by these embodiments. Therefore, it should be understood that the embodiments described above are illustrative in all aspects and not restrictive. The protection scope of the present invention should be interpreted by the claims, and all technical ideas within a scope equivalent thereto should be interpreted as being included in the scope of the rights of the present invention.

Claims

1. Substrate; A thin film layer provided on the above substrate; and Including a first sealing layer provided on the above thin film layer, The first sealing layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate, An electrical and electronic component in which another portion of the lower surface of the above substrate is exposed to the outside.

2. In paragraph 1, In addition, a second sealing layer is provided on the first sealing layer, The second sealing layer is an electrical and electronic element covering a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate.

3. In paragraph 2, The first sealing layer includes an oxide film containing silicon (Si), An electrical and electronic device comprising the second sealing layer including a nitride film containing silicon (Si).

4. In paragraph 1, An electrical and electronic device in which the thickness of the first sealing layer covering a portion of the lower surface of the substrate becomes thinner toward the inner side of the substrate.

5. In paragraph 1, The first sealing layer includes a first portion provided on the upper surface of the substrate, a second portion provided on the side surface of the substrate, a third portion provided on the lower surface of the substrate, and a fourth portion provided at the edge of the substrate between the second portion and the third portion. An electrical and electronic device wherein the thickness of the fourth portion is thicker than that of the second portion and the third portion, and thinner than that of the first portion.

6. A method for forming a thin film by being placed on a susceptor provided inside a chamber, A step of preparing a substrate on the above susceptor; A step of forming a thin film layer on the substrate; and Comprising a step of forming a first sealing layer on the above thin film layer, The first sealing layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate, A method for forming a thin film in which another part of the lower surface of the above substrate is exposed to the outside.

7. In paragraph 6, The distance between the substrate and the susceptor is in the range of 0.1 mm to 10 mm, The above first sealing layer is a thin film forming method formed using atomic layer deposition (ALD).

8. In paragraph 6, The distance between the substrate and the susceptor is in the range of 2.5 mm to 10 mm, The above first sealing layer is a thin film forming manufacturing method formed using a chemical vapor deposition method (CVD).

9. In paragraph 6, Additionally comprising a step of forming a second encapsulating layer on the first encapsulating layer, A method for forming a thin film in which the second sealing layer covers a portion of the lower surface of the substrate, the upper surface of the substrate, and the side surface of the substrate.

10. In paragraph 9, The above first sealing layer is formed using atomic layer deposition (ALD), The above second sealing layer is a thin film forming method formed using a chemical vapor deposition method (CVD).

11. Chamber; A susceptor provided inside the chamber and accommodating a substrate; and A spacer member is included that supports the central region of the substrate and can separate the substrate from the susceptor by 1 mm or more. The above-mentioned separation member is a substrate processing device that supports the substrate so that a portion of the lower surface of the substrate is exposed to the outside, thereby allowing a portion of the lower surface of the substrate to be deposited.

12. In paragraph 11, The above-mentioned separation member is a substrate processing device whose height can be adjusted.

13. In paragraph 11, A substrate processing device in which the upper surface of the above-mentioned separation member is in contact with the lower surface of the above-mentioned substrate.

14. In paragraph 11, A substrate processing device in which the area of ​​the upper surface of the above-mentioned separation member is smaller than the area of ​​the lower surface of the above-mentioned substrate.

15. In paragraph 11, A substrate processing device in which the entire upper surface of the above-mentioned separation member is in contact with the lower surface of the above-mentioned substrate.

16. In paragraph 11, The above-mentioned separation member is an anodized substrate processing device.

17. In paragraph 11, The above substrate further includes an edge region provided on the outer side of the central region, A substrate processing device in which the edge region of the above substrate does not come into contact with the above separation member.

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