Benzotriazole organic compound, and preparation method therefor and use thereof

Abstract

A benzotriazole organic compound, and a preparation method therefor and the use thereof. The benzotriazole organic compound has a general structural formula as represented by formula (1): wherein each Ar independently comprises a substituted or unsubstituted aromatic group or a substituted or unsubstituted heteroaromatic group; R1 and R2 are each independently selected from a substituted or unsubstituted alkyl group, or a substituted or unsubstituted alkoxy group; R3 and R4 are each independently selected from halogen, or a substituted or unsubstituted alkoxy group, or a substituted or unsubstituted alkylthio group; and R5 is selected from a substituted or unsubstituted alkyl group.

Description

Benzotriazole organic compounds and their preparation methods and applications

[0001] Related applications

[0002] This application claims priority to Chinese patent application No. 2023116828707, filed on December 8, 2023, entitled “Benzotriazole organic compounds, preparation methods and applications thereof,” the entire text of which is hereby incorporated by reference. Technical Field

[0003] The present application relates to the field of organic functional materials, and in particular to a benzotriazole organic compound and a preparation method and application thereof. Background Art

[0004] As an abundant, clean energy source that requires no transportation, solar energy holds promise as a viable alternative to traditional fossil fuels. The development of solar energy collection and conversion technologies has become a research focus. Photovoltaic devices, which directly convert solar energy into electricity, are one of the most efficient ways to utilize solar energy. Globally, demand for installed photovoltaic capacity continues to grow.

[0005] However, the vast majority of photovoltaic devices can only effectively utilize visible and near-infrared sunlight, with low efficiency in utilizing ultraviolet light (wavelengths less than 400nm). Furthermore, the presence of ultraviolet light in sunlight can reduce the lifespan of photovoltaic devices, especially for heterojunction (HJT) cells. HJTs are expected to replace rear-surface cells (PERC) and tunneling oxide passivated contact (TOPCon) solar cells, becoming the third generation of solar cells. Furthermore, while the use of UV-absorbing encapsulating films can improve the stability of photovoltaic devices, this can significantly reduce their efficiency.

[0006] The use of wavelength conversion films not only effectively absorbs ultraviolet light from sunlight, preventing it from damaging the lifespan of photovoltaic devices, but also converts ultraviolet light into usable visible light, thereby improving the photovoltaic device's photoelectric conversion efficiency. The key to wavelength conversion film technology lies in selecting the right light converter. Traditional light converters are mainly divided into inorganic and organic light converters. Compared with inorganic light converters, organic light converters offer advantages such as lower cost, a wider variety, and easily tunable performance. Furthermore, since the substrate of wavelength conversion films is typically an organic polymer material, organic light converters often exhibit better dispersibility and compatibility with the substrate, and have less impact on the wavelength conversion film's light transmission properties. While traditional organic light converters can effectively absorb ultraviolet light and convert it into visible light (typically blue or sky blue), thereby improving the efficiency of photovoltaic devices, they suffer from poor stability and the corresponding wavelength conversion films have a high water vapor transmission rate, which significantly reduces the lifespan of photovoltaic devices.

[0007] Summary of the Invention

[0008] According to various embodiments of the present application, the present application provides a benzotriazole organic compound, a preparation method and an application thereof.

[0009] The technical solution is as follows:

[0010] In one aspect of the present application, a benzotriazole organic compound is provided, the general structural formula of which is shown in formula (1):

[0011] wherein each Ar independently comprises a substituted or unsubstituted aromatic group, or a substituted or unsubstituted heteroaromatic group;

[0012] R1 and R2 are each independently selected from a substituted or unsubstituted alkyl group, or a substituted or unsubstituted alkoxy group;

[0013] R3 and R4 are each independently selected from halogen, or substituted or unsubstituted alkoxy, or substituted or unsubstituted alkylthio;

[0014] R5 is selected from substituted or unsubstituted alkyl groups.

[0015] In some embodiments, each Ar independently comprises a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms.

[0016] In some embodiments, each Ar is selected from a substituted or unsubstituted six-membered aromatic group, a substituted or unsubstituted six-membered heteroaromatic group, and a substituted or unsubstituted five-membered heteroaromatic group.

[0017] In some embodiments, each of the Ars is independently selected from one of the following groups:

[0018] Wherein, * represents a linking site, and X represents O, S or Se.

[0019] In some embodiments, the R1 and R2 are independently selected from substituted or unsubstituted C1 to C 20 Alkyl, or substituted or unsubstituted C1~ C 20 Alkoxy.

[0020] In some embodiments, the R1 and R2 are independently selected from one of the following groups:

[0021] Wherein, * indicates the connection site, n1≥2.

[0022] In some embodiments, the R3 and R4 are independently selected from halogen, substituted or unsubstituted C1-C 20 Alkoxy, or substituted or unsubstituted C1~C 20 Alkylthio.

[0023] In some embodiments, R3 and R4 are independently selected from one of the following groups:

[0024] Wherein, * represents a connection site, Y represents F, Cl, Br or I, and each R6 is independently selected from substituted or unsubstituted C1 to C 20 Straight chain alkyl, or substituted or unsubstituted C3~C 20 Branched chain alkyl.

[0025] In some embodiments, R3 and R4 are independently selected from one of the following groups:

[0026] Wherein, * represents a linking site, and Y represents F, Cl, Br or I.

[0027] In some embodiments, the R5 is selected from substituted or unsubstituted C1 to C 20 alkyl.

[0028] In some embodiments, the R5 is selected from one of the following groups:

[0029] Wherein, * indicates the connection site, and n2≥2.

[0030] In some embodiments, the benzotriazole organic compound described above has any of the following structures:

[0031] The second aspect of the present application further provides a method for preparing the benzotriazole organic compound as described above, and the technical solution is as follows:

[0032] A method for preparing the above-mentioned benzotriazole organic compound comprises the following steps:

[0033] Compound a, compound b, compound c and a base are mixed in a solvent and reacted to prepare a benzotriazole organic compound of formula (1);

[0034] In some embodiments, the molar ratio of the compound (a), the compound (b) and the compound (c) is about 1:(1-2):(1-2).

[0035] In some embodiments, the molar ratio of the base to the compound (a) is about (1-2):1.

[0036] In some embodiments, the base comprises potassium carbonate.

[0037] In some embodiments, the solvent includes a mixed solvent of 1,4-dioxane and water.

[0038] In some embodiments, the reaction temperature is about 80° C. to about 100° C., and the reaction time is about 20 h to about 40 h.

[0039] The third aspect of the present application also provides the application of the above-mentioned benzotriazole organic compound, and the technical solution is as follows:

[0040] A light conversion agent comprises the above-mentioned benzotriazole organic compound.

[0041] In some embodiments, the absorption wavelength range of the light conversion agent is about 280 nm to about 400 nm.

[0042] In some embodiments, the maximum absorption peak of the light conversion agent is about 320 nm to about 380 nm.

[0043] In some embodiments, the photoluminescence range of the light conversion agent is from about 400 nm to about 600 nm.

[0044] In some embodiments, the maximum emission peak of the light conversion agent is about 450 nm to about 550 nm.

[0045] A photovoltaic adhesive film comprises the above-mentioned benzotriazole organic compound, or the above-mentioned light conversion agent.

[0046] In some embodiments, the photovoltaic adhesive film further comprises an optically transparent polymer material.

[0047] In some embodiments, the raw materials for preparing the photovoltaic film include, by mass percentage, about 0.01% to about 5% of the above-mentioned benzotriazole organic compound or the above-mentioned light conversion agent, and about 95% to about 99.99% of the above-mentioned polymer material.

[0048] In some embodiments, the polymer material is selected from one or more of polyolefin elastomer (POE), ethylene-vinyl acetate copolymer (EVA), polyvinyl butyral (PVB) and silicone resin materials.

[0049] In some embodiments, the organic silicone resin material includes a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2-15).

[0050] A photovoltaic device comprises a solar cell, wherein at least one surface of the solar cell is provided with the photovoltaic adhesive film as described above.

[0051] In some embodiments, the solar cell includes one or more of a crystalline silicon solar cell, a perovskite solar cell, and a stacked cell consisting of a perovskite cell and a crystalline silicon cell.

[0052] In some embodiments, the solar cell is a stacked cell composed of a perovskite cell and a crystalline silicon cell, and the solar cell includes a first transparent conductive layer, an electron transport layer, a perovskite active layer, a hole transport layer, a second transparent conductive layer, an N-type doped layer, a first amorphous silicon layer, a silicon wafer, a second amorphous silicon layer, a P-type doped layer and a third transparent conductive layer, as well as a first gate electrode layer and a second gate electrode layer, which are stacked in sequence;

[0053] The first gate line electrode layer includes a plurality of first gate line electrodes arranged at intervals, and each of the first gate line electrodes is electrically connected to the first transparent conductive layer;

[0054] The second gate line electrode layer includes a plurality of second gate line electrodes arranged at intervals, and each of the second gate line electrodes is electrically connected to the third transparent conductive layer.

[0055] In some embodiments, the photovoltaic device further comprises a light-incident panel and a backlight panel, wherein the light-incident panel is stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the backlight panel is stacked on a surface of the third transparent conductive layer away from the perovskite active layer;

[0056] The surface of the solar cell is covered by the photovoltaic film.

[0057] In some embodiments, the solar cell further includes a first anti-reflection layer, the first anti-reflection layer being stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the first gate electrode being passed through the first anti-reflection layer and electrically connected to the first transparent conductive layer;

[0058] The material of the first anti-reflection layer includes one or more of magnesium fluoride, lithium fluoride, silicon nitride, silicon oxide and silicon oxynitride.

[0059] In some embodiments, the solar cell further includes a second anti-reflection layer, the second anti-reflection layer being stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the first gate electrode being passed through the second anti-reflection layer and electrically connected to the first transparent conductive layer;

[0060] The second anti-reflection layer includes a patterned photovoltaic adhesive film;

[0061] In terms of mass percentage, the photovoltaic adhesive film comprises about 0.01% to about 5% of the above-mentioned benzotriazole organic compound or the above-mentioned light conversion agent, and about 95% to about 99.99% of the above-mentioned polymer material;

[0062] The organic silicone resin material includes a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2-15).

[0063] In some embodiments, the solar cell further includes a third anti-reflection layer, the third anti-reflection layer being stacked on a surface of the third transparent conductive layer away from the perovskite active layer, and the second gate electrode is disposed through the third anti-reflection layer and electrically connected to the third transparent conductive layer;

[0064] The third anti-reflection layer includes a patterned photovoltaic adhesive film;

[0065] In terms of mass percentage, the photovoltaic adhesive film comprises about 0.01% to about 5% of the above-mentioned benzotriazole organic compound or the above-mentioned light conversion agent, and about 95% to about 99.99% of the above-mentioned polymer material;

[0066] The organic silicone resin material includes a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of 1:(2-15).

[0067] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0068] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the conventional technology, the following briefly introduces the drawings required for use in the embodiments or the conventional technology descriptions. Obviously, the drawings described below are merely embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on the disclosed drawings without any creative work.

[0069] FIG1 is a schematic structural diagram of a stacked cell composed of a perovskite cell and a crystalline silicon cell according to an embodiment of the present application;

[0070] FIG2 is another schematic structural diagram of a stacked cell composed of a perovskite cell and a crystalline silicon cell according to an embodiment of the present application;

[0071] FIG3 is a schematic diagram of another structure of a tandem cell composed of a perovskite cell and a crystalline silicon cell according to an embodiment of the present application;

[0072] FIG4 is a schematic structural diagram of a photovoltaic device according to one embodiment of the present application;

[0073] FIG5 is a schematic structural diagram of a solar cell including a single-layer patterned anti-reflection layer according to one embodiment of the present application;

[0074] FIG6 is a schematic structural diagram of a solar cell including a double-layer patterned anti-reflection layer according to one embodiment of the present application;

[0075] FIG7 is a flow chart of a method for preparing a solar cell having a double-layer patterned anti-reflection layer and a schematic diagram of an intermediate structure as described in FIG6 ;

[0076] FIG8 is a schematic diagram of a photovoltaic film structure with pyramidal and hemispherical patterns;

[0077] FIG9 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 1 of the present application;

[0078] FIG10 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 2 of the present application;

[0079] FIG11 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 3 of the present application;

[0080] FIG12 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 4 of the present application;

[0081] FIG13 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 5 of the present application;

[0082] FIG14 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 6 of the present application;

[0083] FIG15 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 7 of the present application;

[0084] FIG16 is a hydrogen nuclear magnetic resonance spectrum of the benzotriazole compound synthesized in Synthesis Example 8 of the present application;

[0085] FIG17 is an IV curve of a solar cell containing a double-layer patterned anti-reflection layer shown in one device embodiment and a comparative example of the present application;

[0086] FIG. 18 is an external quantum efficiency-wavelength curve of a solar cell containing a double-layer patterned anti-reflection layer shown in one device embodiment and a comparative example of the present application. DETAILED DESCRIPTION

[0087] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0088] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application pertains. The terms used herein in the specification of this application are for the purpose of describing specific embodiments only and are not intended to limit this application.

[0089] Where “including,” “having,” and “comprising” are used herein, it is intended to cover a non-exclusive inclusion, and another component may also be added unless a clear limiting term such as “only,” “consisting of,” etc. is used.

[0090] In this application, the terms "first," "second," and "third" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first," "second," or "third" may explicitly or implicitly include at least one of such features.

[0091] In the present application, directional words such as the terms "center", "horizontal", "longitudinal", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise" and the like indicating directions and positional relationships are based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and should not be understood as limiting the scope of protection of the present application.

[0092] When describing positional relationships, unless otherwise specified, when an element, such as a layer, film, or substrate, is referred to as being "on" another layer, it can be directly on the other layer or intervening layers may also be present. Furthermore, when a layer is referred to as being "under" another layer, it can be directly under or one or more intervening layers may also be present. It will also be understood that when a layer is referred to as being "between" two layers, it can be the only layer between the two layers or one or more intervening layers may also be present.

[0093] In the present application, “further”, “further”, “particularly”, etc. are used for descriptive purposes to indicate differences in content, but should not be understood as limiting the scope of protection of the present application.

[0094] In this application, "at least one" means more than one, such as one, two, or more than two. "Multiple" or "several" means at least two, such as two, three, etc., and "multi-layer" means at least two layers, such as two, three, etc., unless otherwise specifically defined. In the description of this application, "several" means at least one, such as one, two, etc., unless otherwise specifically defined.

[0095] When a numerical range is disclosed in this application, the above range is considered continuous and includes the minimum and maximum values ​​of the range, as well as every value between such minimum and maximum values. Further, when a range refers to an integer, every integer between the minimum and maximum values ​​of the range is included. In addition, when multiple ranges are provided to describe a feature or characteristic, the ranges can be combined. In other words, unless otherwise indicated, all ranges disclosed herein should be understood to include any and all subranges included therein. And only some numerical ranges are specifically disclosed herein. However, any lower limit can be combined with any upper limit to form an unspecified range; and any lower limit can be combined with other lower limits to form an unspecified range, and similarly, any upper limit can be combined with any other upper limit to form an unspecified range. In addition, each separately disclosed point or single value itself can be combined as a lower limit or upper limit with any other point or single value or with other lower limits or upper limits to form an unspecified range.

[0096] Unless otherwise specified, all steps of the present application may be performed sequentially or randomly. For example, the method includes steps (a) and (b), which means that the method may include steps (a) and (b) performed sequentially, or may include steps (b) and (a) performed sequentially. For example, the method may further include step (c), which means that step (c) may be added to the method in any order. For example, the method may include steps (a), (b) and (c), or may include steps (a), (c) and (b), or may include steps (c), (a) and (b), etc.

[0097] Unless mentioned otherwise, terms in the singular may include plural forms and should not be construed as having one number.

[0098] The temperature parameters in this application, unless otherwise specified, allow for both constant temperature treatment and treatment within a certain temperature range. The constant temperature treatment allows for temperature fluctuations within the precision range of instrument control.

[0099] The weights of the relevant components mentioned in the examples of this application specification may not only refer to the specific content of each component, but also represent the weight ratio between the components. Therefore, as long as the content of the relevant components in the examples of this application specification is proportionally enlarged or reduced according to the scope disclosed in the examples of this application specification, it is within the scope disclosed in the examples of this application specification. Specifically, the weights described in the examples of this application specification may be mass units known in the chemical industry, such as μg, mg, g, and kg.

[0100] In this application, when referring to a data range, if the unit is followed only by the right endpoint, it means that the units of the left and right endpoints are the same. For example, 800-850nm means that the units of the left endpoint "800" and the right endpoint "850" are both nm (nanometers).

[0101] In the present application, “above” or “below” includes the number itself, for example, below 1 means less than or equal to 1 (≤1), and above 1 means greater than or equal to 1 (≥1).

[0102] In the present application, "A and B are independently selected from x, y or z" means that A and B are independent events, and event A does not affect the occurrence of event B. Therefore, when A is selected from x, B can be selected from any one of x, y or z; when A is selected from y, B can be selected from any one of x, y or z; when A is selected from z, B can be selected from any one of x, y or z.

[0103] In this application, "substituted or unsubstituted" means that the defined group may be substituted or unsubstituted. When the defined group is substituted, it should be understood that it is optionally substituted by a group acceptable in the art, including but not limited to: C1 to C 30Alkyl, cycloalkyl containing 3 to 20 ring atoms, heterocyclyl containing 3 to 20 ring atoms, aryl containing 5 to 20 ring atoms, heteroaryl containing 5 to 20 ring atoms, silanyl, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, haloformyl, formyl, -NRR', cyano, isocyano, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, nitro or halogen, and the above groups may be further substituted with substituents acceptable in the art; it is understood that R and R' in -NRR' are each independently substituted by a group acceptable in the art, including but not limited to H, C1-C6 alkyl, cycloalkyl containing 3 to 8 ring atoms, heterocyclyl containing 3 to 8 ring atoms, aryl containing 5 to 20 ring atoms or heteroaryl containing 5 to 10 ring atoms; the C1-C6 alkyl, cycloalkyl containing 3 to 8 ring atoms, heterocyclyl containing 3 to 8 ring atoms, aryl containing 5 to 20 ring atoms or heteroaryl containing 5 to 10 ring atoms are optionally further substituted by one or more of the following groups: C1-C6 alkyl, cycloalkyl containing 3 to 8 ring atoms, heterocyclyl containing 3 to 8 ring atoms, halogen, hydroxyl, nitro or amino.

[0104] In this application, the "number of ring atoms" refers to the number of atoms in the atoms that constitute the ring itself of a structural compound (e.g., a monocyclic compound, a condensed ring compound, a cross-linked compound, a carbocyclic compound, a heterocyclic compound) formed by atoms bonded together to form a ring. When the ring is substituted with a substituent, the atoms contained in the substituent are not included in the ring atoms. The "number of ring atoms" described below is also the same unless otherwise specified. For example, the number of ring atoms of a benzene ring is 6, the number of ring atoms of a naphthalene ring is 10, and the number of ring atoms of a thienyl group is 5.

[0105] In this application, "alkyl" can refer to a linear, branched, and / or cyclic alkyl group. The number of carbon atoms in an alkyl group can be 1 to 50, 1 to 30, 1 to 20, 1 to 10, or 1 to 6. Phrases containing this term, for example, "C1-C9 alkyl" refer to an alkyl group containing 1 to 9 carbon atoms, and each occurrence can be independently C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, or C9 alkyl. Non-limiting examples of alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, cyclopentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, cyclohexyl, adamantane, and the like.

[0106] The term "alkoxy" refers to a group having "-O-alkyl", that is, an alkyl group as defined above is connected to an alkyl structure via an oxygen atom. 20 Alkoxy includes C1~C 19 、C1~C 14 、C1~C 12 、C2~C6、C2~C4、C 15 、C 10 , C8, C5 and C 20 Alkoxy, etc. Containing the C1 to C 20 Suitable examples of the alkoxy term include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), and tert-butoxy (-OC(CH3)3 or -OtBu).

[0107] The term "alkylthio" refers to an alkyl group connected to the rest of the molecule through a sulfur atom, "-S-alkyl", wherein the "alkyl" in the "alkyl group" is defined as above in the present application. Unless otherwise specified in the specification, the alkylthio group may be optionally substituted. Unless otherwise specified, the term "C1-C 20 "Alkylthio" refers to an alkyl group containing 1 to 20 carbon atoms which is connected to the rest of the parent molecule through a sulfur atom. 20 Alkylthio includes C1~C 19 、C1~C 14 、C1~C 12 、C2~C6、C2~C4、C 15 、C 10 , C8, C5 and C 20 Alkylthio, etc. C1~C 20 Examples of alkylthio groups include, but are not limited to, -SCH3, -SCH2CH3, -SCH2CH2CH3, -SCH2(CH3)2, -SCH2CH2CH2CH3, -SCH2CH2(CH3)2, -SCH2CH2CH2CH2CH3, -SCH2CH2CH2CH2CH3, -SCH2(CH2CH2CH3)(CH2CH2CH2CH3).

[0108] "Aryl" or "aromatic group" or "aromatic group" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom. It can be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic rings, at least one of the rings is an aromatic ring system. For example, "substituted or unsubstituted aryl having 6 to 40 ring atoms" refers to a substituted or unsubstituted aryl group containing 6 to 40 ring atoms, preferably an aryl group having 6 to 30 ring atoms, more preferably an aryl group having 6 to 18 ring atoms, and particularly preferably an aryl group having 6 to 14 ring atoms, and the aryl group is optionally further substituted; suitable examples include, but are not limited to, benzene, biphenyl, terphenyl, naphthalene, anthracene, fluoranthene, phenanthrene, triphenylene, perylene, tetracene, pyrene, benzopyrene, acenaphthene, fluorene, and their derivatives. It is understood that multiple aromatic groups may also be interrupted by short non-aromatic units (e.g. <10% non-H atoms, such as C, N or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, diaryl ether systems should also be included in the definition of aromatic groups.

[0109] "Heteroaryl or heteroaromatic group or heteroaromatic group" means that at least one carbon atom on the basis of an aromatic group is replaced by a non-carbon atom, and the non-carbon atom may be a nitrogen atom, an oxygen atom, a sulfur atom, etc. For example, "substituted or unsubstituted heteroaryl having 5 to 40 ring atoms" refers to a substituted or unsubstituted heteroaryl group containing 5 to 40 ring atoms, preferably a heteroaryl group having 6 to 30 ring atoms, more preferably a heteroaryl group having 6 to 18 ring atoms, and particularly preferably a heteroaryl group having 6 to 14 ring atoms, and the heteroaryl group is optionally further substituted. Suitable examples include, but are not limited to, triazine, pyridine, pyrimidine, imidazole, furan, thiophene, benzofuran, benzothiophene, indole, carbazole, pyrroloimidazole, pyrrolopyrrole, thienopyrrole, thienothiophene, furopyrrole, furofuran, thienothiophene, benzisoxazole, benzisothiazole, benzimidazole, quinoline, isoquinoline, o-naphthylidene, quinoxaline, phenanthridine, primary idine, quinazoline, quinazolinone, dibenzothiophene, dibenzofuran, carbazole and derivatives thereof.

[0110] In this application, "*" connected to a single bond indicates a linking site.

[0111] The present application provides a benzotriazole organic compound and its preparation method and application, aiming to provide a new type of organic functional material with good stability, which can improve the photovoltaic efficiency and service life of photovoltaic devices.

[0112] The technical solution is as follows:

[0113] A benzotriazole organic compound, the general structural formula of which is shown in formula (1):

[0114] wherein each Ar independently comprises a substituted or unsubstituted aromatic group, or a substituted or unsubstituted heteroaromatic group;

[0115] R1 and R2 are each independently selected from a substituted or unsubstituted alkyl group, or a substituted or unsubstituted alkoxy group;

[0116] R3 and R4 are each independently selected from halogen, or substituted or unsubstituted alkoxy, or substituted or unsubstituted alkylthio;

[0117] R5 is selected from substituted or unsubstituted alkyl groups.

[0118] The benzotriazole organic compounds provided in the present application are modified with specific Ar, R1, R2, R3, R4 and R5 groups based on benzotriazole, which can increase the fluorescence characteristics of the product, adjust the absorption spectrum to the ultraviolet light region, and the fluorescence emission spectrum to the visible light region. The introduction of R3 and R4 can adjust the donor-acceptor interaction within the molecule, increase the molecular rigidity, increase the oxidation barrier, and improve the stability of the molecule. The molecular rigidity can also increase the absorption extinction coefficient and fluorescence quantum yield of the compound molecule, thereby helping to improve the light conversion efficiency and the conversion efficiency of the photovoltaic device.

[0119] It can be seen that through the coordination of benzotriazole and various substituents, the benzotriazole-based organic compound can absorb ultraviolet light and convert it into visible light, such as blue light or sky blue light. It also has good stability, a high absorption extinction coefficient and a high fluorescence quantum yield. It can be used as a light conversion agent. The benzotriazole-based organic compound can be made into a photovoltaic film, which has the advantages of good light conversion effect, high stability, and low water vapor transmission rate. Further use in photovoltaic devices can improve the photovoltaic efficiency and stability of photovoltaic devices and extend the life of the devices.

[0120] Testing has shown that in some examples of the present invention, the benzotriazole organic compound exhibits an absorption wavelength range of 280nm to 400nm, with a maximum absorption peak of 320nm to 380nm. Its photoluminescence range is 400nm to 600nm, with a maximum emission peak of 450nm to 550nm. Using it in photovoltaic films and further in photovoltaic devices can increase the photovoltaic efficiency of photovoltaic devices by over 1% and extend their lifespan by over 50%.

[0121] In the present application, each Ar independently includes a substituted or unsubstituted aromatic group, or a substituted or unsubstituted heteroaromatic group. Further, each Ar independently includes a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms. Further, each Ar independently includes a substituted or unsubstituted aromatic group having 6 to 20 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 20 ring atoms. Further still, the Ar is selected from a substituted or unsubstituted six-membered aromatic group, a substituted or unsubstituted six-membered heteroaromatic group, or a substituted or unsubstituted five-membered heteroaromatic group.

[0122] In some embodiments, each of the Ars is independently selected from one of the following groups:

[0123] Wherein, * represents a linking site, and X represents O, S or Se.

[0124] In some embodiments, each of the Ars is independently selected from one of the following groups:

[0125] Wherein, * represents a linking site, and X represents O, S or Se.

[0126] In the present application, R1 and R2 are independently selected from substituted or unsubstituted alkyl, or substituted or unsubstituted alkoxy. Further, R1 and R2 are independently selected from substituted or unsubstituted C1 to C 20 Alkyl, or substituted or unsubstituted C1~C 20 Without limitation, the R1 and R2 are independently selected from substituted or unsubstituted C1 to C 20 Straight chain alkyl, or substituted or unsubstituted C3~C 20 Branched alkyl, or substituted or unsubstituted C3~C 20 Cyclic alkyl, or substituted or unsubstituted C1~C 20 Straight chain alkoxy, or substituted or unsubstituted C3~C 20 Branched alkoxy, or substituted or unsubstituted C3~C 20 Cyclic alkoxy.

[0127] In some embodiments, R1 and R2 are independently selected from C1 to C2 substituted or unsubstituted by R. 20 Straight chain alkyl, or C3~C 20 Branched alkyl, C1~C 20 Straight chain alkoxy, or C3~C 20Furthermore, the R1 and R2 are independently selected from C1 to C 10 Straight chain alkyl, or C3~C 10 Branched alkyl, or C1~C 10 Straight chain alkoxy, or C3~C 10 Branched alkoxy. R in R1 and R2 is independently a C1-C6 straight-chain alkyl group, and further R in R1 and R2 is a methyl group, an ethyl group, an n-propyl group, or an n-butyl group.

[0128] In some embodiments, the R1 and R2 are independently selected from one of the following groups:

[0129] Wherein, * indicates the connection site, n1≥2.

[0130] In the present application, R3 and R4 are independently selected from halogen (elements of the seventh main group), or substituted or unsubstituted alkoxy, or substituted or unsubstituted alkylthio; without limitation, further, said R3 and said R4 are independently selected from halogen, substituted or unsubstituted C1~C 20 Alkoxy, or substituted or unsubstituted C1~C 20 Further, R3 and R4 are independently selected from fluorine (F), chlorine (Cl), bromine (Br), iodine (I), astatine (At), substituted or unsubstituted C1-C 20 Straight chain alkoxy, or substituted or unsubstituted C3~C 20 Branched alkoxy, or substituted or unsubstituted C3~C 20 Cyclic alkoxy, or substituted or unsubstituted C1-C 20 Straight chain alkylthio, or substituted or unsubstituted C3~C 20 Branched alkylthio, or substituted or unsubstituted C3~C 20 Cyclic alkylthio.

[0131] Preferably, R3 and R4 are independently selected from one of the following groups:

[0132] Wherein, * represents a connection site, Y represents F, Cl, Br or I, and each R6 is independently selected from substituted or unsubstituted C1 to C 20 Straight chain alkyl, or substituted or unsubstituted C3~C 20 Branched chain alkyl.

[0133] Furthermore, R3 and R4 are independently selected from

[0134] Each R6 is independently selected from C1 to C 20 Straight chain alkoxy, or C3~C 20 Branched alkoxy, C1~C 20 Straight chain alkylthio, or C3~C 20 Furthermore, each R6 is independently selected from C1 to C 10 Straight chain alkoxy, or C3~C 10 Branched alkoxy, or C1~C 10 Straight chain alkylthio, or C3~C 10 Branched chain alkylthio.

[0135] Without limitation, R in R6 is independently C1 to C 20 Straight chain alkyl, C3~C 20 The linear alkyl groups are further independently C1 to C 20 Straight chain alkyl, C3~C 20 Branched alkyl, or C3~C 20 Furthermore, R in R6 is independently C1 to C 10 Straight chain alkyl, C3~C 10 Branched alkyl, or C3~C 10 Cyclic alkyl. Further, R in R6 is independently a C1-C6 straight-chain alkyl, C3-C6 branched-chain alkyl. Further, R in R6 is independently a methyl, ethyl, n-propyl or n-butyl group.

[0136] In some embodiments, R3 and R4 are independently selected from one of the following groups:

[0137] Wherein, * represents a linking site, and Y represents F, Cl, Br or I.

[0138] In the present application, the R5 is selected from substituted or unsubstituted alkyl. Preferably, the R5 is selected from substituted or unsubstituted C1-C20 alkyl. Without limitation, the R5 is selected from substituted or unsubstituted C1-C20 linear alkyl, substituted or unsubstituted C3-C 20 Branched alkyl, substituted or unsubstituted C3~C 20 Preferably, R5 is selected from C1 to C 20 Straight chain alkyl, or C3~C 20 Branched alkyl, or C3~C20 Furthermore, the R5 are independently selected from C1 to C 10 Straight chain alkyl, or C3~C 10 Branched alkyl, or C3~C 10 Cyclic alkyl.

[0139] Without limitation, R in R5 is independently C1-C20 straight chain alkyl, C3-C 20 The linear alkyl groups are further independently C1 to C 20 Straight chain alkyl, C3~C 20 Branched alkyl, or C3~C 20 Furthermore, R in R5 is independently C1 to C 10 Straight chain alkyl, C3~C 10 Branched alkyl, or C3~C 10 Cyclic alkyl. Further, R in R5 is independently a C1-C6 straight-chain alkyl, C3-C6 branched-chain alkyl. Further, R in R5 is independently a methyl, ethyl, n-propyl or n-butyl group.

[0140] In some embodiments, the R5 is selected from one of the following groups:

[0141] Wherein, * indicates the connection site, and n2≥2.

[0142] In some embodiments, the benzotriazole organic compound described in the present application has any of the following structures:

[0143] The present application also provides a method for preparing the benzotriazole organic compound as described above, comprising the following steps:

[0144] Compound (a), compound (b), compound (c) and a base are mixed in a solvent and reacted to prepare a benzotriazole organic compound of formula (1);

[0145] The definitions of R1, R2, R3, R4 and R5 are the same as those described above for the benzotriazole organic compound.

[0146] In some embodiments, the molar ratio of compound (a), compound (b), and compound (c) is about 1:(1-2):(1-2).

[0147] In some embodiments, the molar ratio of the base to the compound (a) is about (1-2):1.

[0148] In some embodiments, the base is selected from one or more of potassium carbonate, sodium carbonate, sodium methoxide, sodium ethoxide and sodium tert-butoxide.

[0149] In some embodiments, the solvent includes a mixed solvent of 1,4-dioxane and water.

[0150] In some embodiments, the reaction temperature is about 80° C. to about 100° C., and the reaction time is about 20 h to about 40 h.

[0151] In some embodiments, the method for preparing the benzotriazole organic compound as described above comprises the following steps:

[0152] The 4,7-dibromobenzotriazole derivative represented by formula (a) and the alkylphenylboronic acid represented by formula (b) and formula (c) are dissolved in 1,4-dioxane, and alkali and deionized water are added. The reaction environment is then replaced with an inert gas (nitrogen or argon). The reaction is heated to about 80°C to about 100°C and reacted for about 20 hours to about 40 hours. After cooling to room temperature, the reaction is quenched with water and extracted with dichloromethane. The mixture is spin-dried and the target product is extracted using column chromatography. The target product is a white powder.

[0153] In some embodiments, the method for preparing the benzotriazole organic compound as described above comprises the following steps:

[0154] About 1 mmol of a 4,7-dibromobenzotriazole derivative and about 3 mmol of a 4-alkylphenylboronic acid were dissolved in about 10 mL of 1,4-dioxane, and about 2 mmol of potassium carbonate and about 1 mL of deionized water were added. The reaction environment was then replaced with an inert gas (nitrogen or argon). The reaction was heated to about 95°C and allowed to react for about 24 hours. After cooling to room temperature, the reaction was quenched with water and extracted with dichloromethane. The mixture was spin-dried and the target product was extracted using column chromatography. The target product was a white powder.

[0155] The present application also provides the application of the above-mentioned benzotriazole organic compound, and the technical solution is as follows:

[0156] A light conversion agent comprises the above-mentioned benzotriazole organic compound.

[0157] In some embodiments, the light conversion agent has an absorption wavelength range of about 280 nm to about 400 nm.

[0158] In some embodiments, the maximum absorption peak of the light conversion agent is about 320 nm to about 380 nm.

[0159] In some embodiments, the photoluminescence of the light conversion agent ranges from about 400 nm to about 600 nm.

[0160] In some embodiments, the maximum emission peak of the light conversion agent is about 450 nm to about 550 nm.

[0161] A photovoltaic adhesive film comprising the aforementioned benzotriazole organic compound or the aforementioned light conversion agent can absorb ultraviolet light and convert it into visible light, such as blue light or sky blue light. The film exhibits good stability, a high absorption extinction coefficient, and a high fluorescence quantum yield. The film has the advantages of excellent light conversion, high stability, and low water vapor transmission rate. Further application in photovoltaic devices can improve the photovoltaic efficiency and stability of the devices, thereby extending the device life.

[0162] In some embodiments, the photovoltaic film further comprises an optically transparent polymer material. It is understood that in this application, an optically transparent polymer material refers to a polymer material having a transmittance of ≥ about 85% in the visible light range, a refractive index of about 1.2 to about 1.7, and a neutral density of about 0.75 g / cm 3 ~about 1.2g / cm 3 In some embodiments, the optically transparent polymer material described in the present application has a transmittance of ≥ about 90% in the visible light range, a refractive index of about 1.4 to about 1.6, and a neutral density of about 0.75 g / cm 3 ~about 1.2g / cm 3 .

[0163] In some embodiments, the photovoltaic adhesive film includes, by weight, about 0.01% to about 5% of the benzotriazole organic compound or the light conversion agent described above, and about 95% to about 99.99% of the polymer material.

[0164] In some embodiments, the polymer material is selected from one or more of polyolefin elastomer (POE), ethylene-vinyl acetate copolymer (EVA), polyvinyl butyral (PVB), and silicone resin materials. Furthermore, the silicone resin material is selected from one or more of deacidified one-component silica gel, dealcoholized one-component silica gel, deoxime one-component silica gel, hydrogenated silicone oil, and vinyl-terminated polydimethylsiloxane.

[0165] In some embodiments, the silicone resin material comprises a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of approximately 1:(2-15). Such a photovoltaic film has both antireflection and light conversion properties. Without limitation, the hydrogenated silicone oil includes one or more of Dow DC182, 184, 186, and Fule Tianshan 2538.

[0166] It is understood that the photovoltaic adhesive film further includes an auxiliary agent. Further, the auxiliary agent includes one or more of an initiator, an antioxidant, a silane coupling agent, and a light stabilizer.

[0167] In some embodiments, the photovoltaic adhesive film includes, by mass percentage, about 0.01% to 4.95% of the benzotriazole organic compound or the light conversion agent described above, about 95% to about 99.94% of the polymer material, and about 0.05% to about 4.99% of the auxiliary agent.

[0168] In some embodiments, the photovoltaic adhesive film includes, by mass percentage, about 0.01% to about 4.85% of the benzotriazole organic compound as described above or the light conversion agent as described above, about 95% to about 99.84% of the polymer material, about 0.05% to about 1.5% of the initiator, about 0.05% to about 1.5% of the silane coupling agent, and about 0.05% to about 1.5% of the antioxidant.

[0169] In some embodiments, the photovoltaic adhesive film includes, by mass percentage, about 0.01% to about 4.95% of the benzotriazole organic compound or the light conversion agent as described above, about 95% to about 99.94% of the polymer material, and about 0.05% to about 3% of the antioxidant.

[0170] The present application also provides a photovoltaic device, including a solar cell, wherein at least one surface of the solar cell is provided with the photovoltaic film described above. Without limitation, the surface of the solar cell is coated with the photovoltaic film described above, or the photovoltaic film is provided on at least one surface of at least one functional layer of the solar cell.

[0171] In some embodiments, the solar cell includes one or more of a crystalline silicon solar cell, a perovskite solar cell, and a stacked cell consisting of a perovskite cell and a crystalline silicon cell.

[0172] In some embodiments, the solar cell is a stacked cell composed of a perovskite cell and a crystalline silicon cell, with the perovskite cell serving as the light incident side and the crystalline silicon cell serving as the backlight side. Further, referring to FIG1 , the solar cell 1 includes a first transparent conductive layer 10, an electron transport layer 20, a perovskite active layer 30, a hole transport layer 40, a second transparent conductive layer 50, an N-type doped layer 60, a first amorphous silicon layer 70, a silicon wafer 80 (or silicon substrate), a second amorphous silicon layer 90, a P-type doped layer 100, and a third transparent conductive layer 110, as well as a first gate electrode layer and a second gate electrode layer, which are stacked in sequence.

[0173] The first gate line electrode layer includes a plurality of first gate line electrodes 120 arranged at intervals, and each first gate line electrode 120 is electrically connected to the first transparent conductive layer 10;

[0174] The second gate line electrode layer includes a plurality of second gate line electrodes 130 spaced apart from each other. Each second gate line electrode 130 is electrically connected to the third transparent conductive layer 110 .

[0175] In some embodiments, in the present application, the electrical connection is a physical contact, that is, the electrical connection refers to a circuit connection of physical contact rather than a wireless communication signal connection.

[0176] In the present application, without limitation, the material of first transparent conductive layer 10 includes, but is not limited to, one or more selected from the group consisting of indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide, and indium tungsten oxide. Without limitation, the thickness of first transparent conductive layer 10 is approximately 5 nm to approximately 200 nm.

[0177] In the present application, without limitation, the material of the perovskite active layer 30 is selected from, but not limited to, compounds having an ABX3 structure, wherein the A position is composed of methylamine ions, formamidine ions, and Cs + One or more of the following, the B position is composed of Sn 2+ and Pb 2+ One or more of the following, X is composed of F - 、Cl - Br - and I - Without limitation, the thickness of the perovskite active layer 30 is about 0.6 μm to about 2 μm.

[0178] In the present application, without limitation, the material of the hole transport layer 40 includes, but is not limited to, one or more selected from nickel oxide, copper oxide, and molybdenum oxide. Without limitation, the thickness of the hole transport layer 40 is about 5 nm to about 20 nm.

[0179] In the present application, without limitation, the material of the second transparent conductive layer 50 includes, but is not limited to, one or more selected from the group consisting of indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide, and indium tungsten oxide. Without limitation, the thickness of the second transparent conductive layer 50 is approximately 5 nm to approximately 40 nm.

[0180] In the present application, without limitation, the material of N-type doping layer 60 includes, but is not limited to, one or more selected from phosphorus-doped amorphous silicon, phosphorus-doped nanosilicon (nanosilicon or microcrystalline silicon), and phosphorus-doped carbon-oxidized amorphous silicon. Without limitation, the thickness of N-type doping layer 60 is approximately 3 nm to approximately 10 nm.

[0181] In the present application, without limitation, the material of the first amorphous silicon layer 70 includes, but is not limited to, one or more selected from hydrogenated amorphous silicon, hydrogenated silicon oxide, and hydrogenated silicon oxynitride. Without limitation, the thickness of the first amorphous silicon layer 70 is about 1 nm to about 2 nm.

[0182] In the present application, without limitation, the thickness of the silicon wafer 80 is about 200 μm to about 500 μm.

[0183] In the present application, without limitation, the material of the second amorphous silicon layer 90 includes, but is not limited to, one or more selected from hydrogenated amorphous silicon, hydrogenated silicon oxide, and hydrogenated silicon oxynitride. Without limitation, the thickness of the second amorphous silicon layer 90 is about 1 nm to about 2 nm.

[0184] In this application, without limitation, the material of P-type doped layer 100 includes, but is not limited to, one or more selected from boron-doped amorphous silicon, boron-doped nanosilicon (nanosilicon or microcrystalline silicon), and boron-doped carbon-oxidized amorphous silicon. Without limitation, the thickness of P-type doped layer 100 is approximately 3 nm to approximately 20 nm.

[0185] In the present application, without limitation, the material of third transparent conductive layer 110 includes, but is not limited to, one or more selected from the group consisting of indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide, and indium tungsten oxide. Without limitation, third transparent conductive layer 110 has a thickness of approximately 5 nm to approximately 200 nm.

[0186] 2 , in some embodiments, the solar cell 1 further includes a first anti-reflection layer 140 , which is stacked on a surface of the first transparent conductive layer 10 away from the perovskite active layer 30 , and the first gate electrode is disposed through the first anti-reflection layer 140 and is electrically connected to the first transparent conductive layer 10 ;

[0187] Without limitation, the material of the first anti-reflection layer 140 includes one or more of magnesium fluoride, lithium fluoride, silicon nitride, silicon oxide, and silicon oxynitride.

[0188] In the present application, without limitation, the thickness of the first anti-reflection layer 140 is about 20 nm to about 200 nm.

[0189] It can be understood that in the present application, the electron transport layer 20 can be one layer or two layers. For example, along the direction close to the perovskite active layer 30, the electron transport layer 20 includes a first electron transport layer 201 and a second electron transport layer 202. The material of the first electron transport layer 201 is not limited to one or more selected from tin oxide, zinc oxide and titanium oxide semiconductor metal oxides, and the material of the second electron transport layer 202 is not limited to one or more selected from C60, C70, PC 61BM([6,6]-phenyl-C 61 Methyl butyrate), PC 71 BM([6,6]-phenyl-C 71 One or more of the electron transport materials selected from the group consisting of methyl butyrate) fullerene derivatives, naphthalene diimide and perylene diimide.

[0190] It is understood that in order to further enhance the hole transport effect, a hole modification layer 150 is further provided between the perovskite active layer 30 and the hole transport layer 40. Furthermore, the material of the hole modification layer 150 includes, but is not limited to, one or more materials selected from Me-4PACz (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid), MeO-2PACz ((2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid) and 2PACz ((2-(9H-carbazol-9-yl)ethyl)phosphonic acid) containing carbazole and phosphoric acid functional groups and having self-assembly properties.

[0191] It is understood that the N-type doped layer 60 is selected from an N-type microcrystalline silicon layer or an N-type amorphous silicon layer, and the P-type doped layer 100 is selected from a P-type microcrystalline silicon layer or a P-type amorphous silicon layer. The first amorphous silicon layer 70 and the second amorphous silicon layer 90 are independently intrinsic hydrogenated amorphous silicon layers.

[0192] 3 , a tandem cell composed of a perovskite cell and a crystalline silicon cell according to an embodiment of the present application includes a first anti-reflection layer 140, a first transparent conductive layer 10, a first electron transport layer 201, a second electron transport layer 202, a perovskite active layer 30, a hole modification layer 150, a hole transport layer 40, a second transparent conductive layer 50, an N-type doped layer 60, a first amorphous silicon layer 70, a silicon wafer 80, a second amorphous silicon layer 90, a P-type doped layer 100, and a third transparent conductive layer 110, as well as a first gate electrode layer and a second gate electrode layer, which are stacked in sequence.

[0193] The first gate line electrode layer includes a plurality of first gate line electrodes 120 arranged at intervals, and each first gate line electrode 120 is electrically connected to the first transparent conductive layer 10;

[0194] The second gate line electrode layer includes a plurality of second gate line electrodes 130 spaced apart from each other. Each second gate line electrode 130 is electrically connected to the third transparent conductive layer 110 .

[0195] In some embodiments, in the present application, the electrical connection is a physical contact, that is, the electrical connection refers to a circuit connection of physical contact rather than a wireless communication signal connection.

[0196] Furthermore, the material of the first anti-reflection layer 140 in the stacked cell shown in FIG3 includes one or more of magnesium fluoride, lithium fluoride, silicon nitride, silicon oxide and silicon oxynitride.

[0197] Referring to FIG4 , the present application further provides a photovoltaic device comprising a light-incident panel 210, a solar cell 230, and a backlight panel 240 stacked in sequence, wherein the surface of the solar cell is coated with the aforementioned photovoltaic film 220. Furthermore, the solar cell has the structure shown in FIG1 , FIG2 , or FIG3 .

[0198] It can be understood that in this application, the light incident surface is also referred to as the light entering surface.

[0199] In some embodiments, the light incident panel 210 and the backlight panel 240 are glass panels.

[0200] This application also provides a method for preparing a photovoltaic device as shown in FIG4 :

[0201] Select a glass front panel of the required size, cut the adhesive film containing the light-converting agent to the matching size, lay it on the glass front panel, then lay the battery string with electrical connections, and then lay the second layer of adhesive film and the glass back panel. Lamination in a laminator can obtain the component laminate, and then install the junction box and metal frame to obtain the photovoltaic device shown in Figure 4.

[0202] The industry's anti-reflection technology for perovskites mostly uses vapor-deposited MgF x (MgF2 deviating from the stoichiometric ratio, optionally, 1.5≤x≤2) film, however MgF x The output is relatively low and the price is relatively high, which is not conducive to the promotion of mass production. As for light conversion technology, the industry mostly adopts ethylene-vinyl acetate copolymer (EVA) or polyethylene octene co-elastomer (POE) film to add light conversion agents to achieve it, and anti-reflection technology and light conversion technology are two independently developed systems with no precedent for combining them. In some embodiments of the present application, photovoltaic anti-reflection technology is combined with light conversion technology. While reducing the reflection of photons on the battery surface, increasing transmittance and improving device power, it also reduces the damage of ultraviolet light to the battery. Converting ultraviolet light into visible light can further improve device power. In addition, the anti-reflection raw materials used are abundant in source and can be introduced into mass production and industrial application.

[0203] The technical solution is as follows:

[0204] A photovoltaic device includes a solar cell, wherein at least one surface of the solar cell is provided with a patterned photovoltaic film as described above. Furthermore, the photovoltaic film is disposed in the anti-reflection layer of the solar cell to perform anti-reflection and light conversion functions. Furthermore, the anti-reflection layer comprises approximately 0.01% to approximately 5% of the benzotriazole organic compound or light conversion agent described in this application, and approximately 95% to approximately 99.99% of the silicone resin material, wherein the silicone resin material is a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of approximately 1:(2-15). Such an anti-reflection layer photovoltaic film has both anti-reflection and light conversion functions and can be referred to as an anti-reflection photovoltaic film.

[0205] In some embodiments, the solar cell includes one or more of a crystalline silicon solar cell, a perovskite solar cell, and a stacked cell consisting of a perovskite cell and a crystalline silicon cell.

[0206] In some embodiments, the solar cell is a stacked cell composed of a perovskite cell and a crystalline silicon cell, with the perovskite cell serving as the light incident side and the crystalline silicon cell serving as the backlight side. Further, referring to FIG5 , the solar cell includes a second anti-reflection layer 160, a first transparent conductive layer 10, an electron transport layer 20, a perovskite active layer 30, a hole transport layer 40, a second transparent conductive layer 50, an N-type doped layer 60, a first amorphous silicon layer 70, a silicon wafer 80, a second amorphous silicon layer 90, a P-type doped layer 100, and a third transparent conductive layer 110, as well as a first gate electrode layer and a second gate electrode layer, which are stacked in sequence.

[0207] The first gate line electrode 120 is disposed through the second anti-reflection layer 160 and is electrically connected to the first transparent conductive layer 10;

[0208] The second gate line electrode 130 is electrically connected to the third transparent conductive layer 110;

[0209] The second anti-reflection layer 160 includes a patterned photovoltaic film as described above, which includes about 0.01% to about 5% of the benzotriazole organic compound or light conversion agent and about 95% to about 99.99% of the silicone resin material, and the silicone resin material is a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2 to 15).

[0210] 6 , the solar cell includes a second anti-reflection layer 160, a first transparent conductive layer 10, an electron transport layer 20, a perovskite active layer 30, a hole transport layer 40, a second transparent conductive layer 50, an N-type doped layer 60, a first amorphous silicon layer 70, a silicon wafer 80, a second amorphous silicon layer 90, a P-type doped layer 100, a third transparent conductive layer 110 and a third anti-reflection layer 170, as well as a first gate electrode layer and a second gate electrode layer, which are stacked in sequence.

[0211] The first gate line electrode 120 is disposed through the second anti-reflection layer 160 and is electrically connected to the first transparent conductive layer 10;

[0212] The second gate line electrode 130 is disposed through the third anti-reflection layer 170 and is electrically connected to the third transparent conductive layer 110;

[0213] The second anti-reflection layer 160 includes a patterned photovoltaic adhesive film as described above, wherein the photovoltaic adhesive film includes about 0.01% to about 5% of the benzotriazole organic compound or light conversion agent and about 95% to about 99.99% of the silicone resin material, and the silicone resin material is a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2-15);

[0214] The third anti-reflection layer 170 includes a patterned photovoltaic film as described above, which includes about 0.01% to about 5% of the benzotriazole organic compound or light conversion agent and about 95% to about 99.99% of the silicone resin material, and the silicone resin material is a mixture of hydrogenated silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2 to 15).

[0215] It is understood that the second anti-reflection layer 160 and the third anti-reflection layer 170 are independent of each other, and their respective compositions may be the same or different. That is, the types of benzotriazole-based organic compounds in the second anti-reflection layer 160 and the third anti-reflection layer 170 may be the same or different, and the content of the benzotriazole-based organic compounds may be the same or different. Similarly, the types of silicone resin materials may be the same or different, and the content of the silicone resin materials may be the same or different. The types of hydrogenated silicone oils may be the same or different, and the types of vinyl-terminated polydimethylsiloxanes may be the same or different, and the mass ratio of hydrogenated silicone oil to vinyl-terminated polydimethylsiloxane may be the same or different.

[0216] In the present application, for a photovoltaic device in which the anti-reflection layer comprises a patterned anti-reflection photovoltaic film, without limitation, the material of the first transparent conductive layer includes but is not limited to one or more selected from indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide, and indium tungsten oxide. Without limitation, the thickness of the first transparent conductive layer is about 5 nm to about 200 nm. The material of the perovskite active layer includes but is not limited to a compound having an ABX3 structure, wherein the A position is composed of methylamine ion, formamidine ion and Cs + One or more of the following, the B position is composed of Sn 2+ and Pb 2+ One or more of the following, X is composed of F - 、Cl - Br - and I - Without limitation, the thickness of the perovskite active layer is about 0.6 μm to about 2 μm. The material of the hole transport layer includes, but is not limited to, one or more selected from nickel oxide, copper oxide, and molybdenum oxide. Without limitation, the thickness of the hole transport layer is about 5 nm to about 20 nm. The material of the second transparent conductive layer includes, but is not limited to, one or more selected from indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide, and indium tungsten oxide. Without limitation, the thickness of the second transparent conductive layer is about 5 nm to about 40 nm. The material of the N-type doped layer includes, but is not limited to, one or more selected from phosphorus-doped amorphous silicon, phosphorus-doped nanosilicon (nanosilicon or microcrystalline silicon), and phosphorus-doped carbon-oxidized amorphous silicon. Without limitation, the thickness of the N-type doped layer is about 3 nm to about 10 nm. The material of the first amorphous silicon layer includes, but is not limited to, one or more selected from hydrogenated amorphous silicon, hydrogenated silicon oxide, and hydrogenated silicon oxynitride. Without limitation, the thickness of the first amorphous silicon layer is about 1 nm to about 2 nm. Without limitation, the thickness of the silicon wafer is about 200 μm to about 500 μm. The material of the second amorphous silicon layer includes but is not limited to one or more selected from hydrogenated amorphous silicon, hydrogenated silicon oxide and hydrogenated silicon oxynitride. Without limitation, the thickness of the second amorphous silicon layer is about 1 nm to about 2 nm. The material of the P-type doped layer includes but is not limited to one or more selected from boron-doped amorphous silicon, boron-doped nano-silicon (nano-silicon or microcrystalline silicon) and boron-doped carbon-oxidized amorphous silicon. Without limitation, the thickness of the P-type doped layer is about 3 nm to about 20 nm. The material of the third transparent conductive layer includes but is not limited to one or more selected from indium tin oxide, aluminum zinc oxide, aluminum indium oxide, indium cerium oxide and indium tungsten oxide. Without limitation, the thickness of the third transparent conductive layer is about 5 nm to about 200 nm.

[0217] Similarly, for a photovoltaic device whose anti-reflection layer includes a patterned anti-reflection photovoltaic film, its electron transport layer can be one layer or two layers. For example, along the direction close to the perovskite active layer, the electron transport layer includes a first electron transport layer and a second electron transport layer. The material of the first electron transport layer is not limited to one or more semiconductor metal oxides selected from tin oxide, zinc oxide and titanium oxide, and the material of the second electron transport layer is not limited to one or more semiconductor metal oxides selected from C60, C70, PC 61 BM([6,6]-phenyl-C 61 Methyl butyrate), PC 71 BM([6,6]-phenyl-C 71 One or more of the electron transport materials selected from the group consisting of methyl butyrate) fullerene derivatives, naphthalene diimide and perylene diimide.

[0218] It is understood that for photovoltaic devices whose anti-reflection layers include patterned anti-reflection photovoltaic films, a hole modification layer is further provided between the perovskite active layer and the hole transport layer to further enhance the hole transport effect. Furthermore, the material of the hole modification layer includes, but is not limited to, one or more materials selected from Me-4PACz (4-(3,6-dimethyl-9H-carbazol-9-yl)butyl]phosphonic acid), MeO-2PACz ((2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl)phosphonic acid), and 2PACz ((2-(9H-carbazol-9-yl)ethyl)phosphonic acid) containing carbazole and phosphate functional groups and having self-assembling properties.

[0219] It is understood that for a photovoltaic device in which the anti-reflection layer comprises a patterned anti-reflection photovoltaic film, the N-type doped layer is selected from an N-type microcrystalline silicon layer or an N-type amorphous silicon layer, and the P-type doped layer is selected from a P-type microcrystalline silicon layer or a P-type amorphous silicon layer. The first amorphous silicon layer and the second amorphous silicon layer are each independently an intrinsic hydrogenated amorphous silicon layer.

[0220] FIG6 is a schematic structural diagram of a solar cell containing a double-layer patterned anti-reflection layer according to one embodiment of the present application, wherein patterned anti-reflection photovoltaic films are provided on both the second anti-reflection layer (the light-incident side anti-reflection layer) and the third anti-reflection layer (the backlight side anti-reflection layer) of the solar cell.

[0221] Referring to FIG7 , the present application further provides a flow chart of a method for preparing a solar cell having a double-layer patterned anti-reflection layer and a schematic diagram of an intermediate structure as described in FIG6 , wherein the preparation method comprises the following steps:

[0222] Performing texturing on the surface of the silicon wafer to obtain a patterned textured surface;

[0223] preparing a silicone resin (PDMS) solution containing a light conversion agent;

[0224] Filling the PDMS solution containing the light conversion agent on the suede surface, heating, curing, and peeling off to obtain a patterned photovoltaic film;

[0225] The patterned photovoltaic film is flatly attached to the surface of the solar cell.

[0226] Figure 8 is a schematic diagram of the structure of a pyramid photovoltaic film and a hemispherical photovoltaic film. Optionally, the pyramid pile surface height shown in Figures 8a and 8b is approximately 0.01 μm to approximately 10 μm, with a pyramid dimensional error of less than or equal to approximately 1 μm; the hemispherical pile surface height shown in Figures 8c and 8d is approximately 0.01 μm to approximately 10 μm, with a dimensional error of less than or equal to approximately 1 μm.

[0227] The present application will be described below in conjunction with embodiments, but the present application is not limited to the following embodiments. It should be understood that the attached claims summarize the scope of the present application. Under the guidance of the concept of the present application, those skilled in the art should realize that certain changes made to the various embodiments of the present application will be covered by the spirit and scope of the claims of the present application.

[0228] 1. Compound Synthesis Examples

[0229] Synthesis Example 1: Synthesis Here are the steps:

[0230] 1 mmol of 4,7-dibromo-5,6-dichloro-2-isobutyl-2H-benzo[d][1,2,3]triazole, 3 mmol of (4-(tert-butyl)phenyl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. 10 mL of 1,4-dioxane and 10 mL of deionized water were then added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used, using dichloromethane and petroleum ether (1:4 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a white solid.

[0231] 1 H NMR (500 MHz, Chloroform-d) δ = 7.45–7.39 (m, 4H), 7.37–7.31 (m, 4H), 3.91 (d, J = 7.0, 2H), 2.35 (dh, J = 13.6, 6.8, 1H), 1.34 (s, 18H), 1.04 (d, J = 6.8, 6H). For the H NMR spectrum, see Figure 9. MOLDI-TOF analysis showed a mass of 507.2.

[0232] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 1.

[0233] Synthesis Example 2: Synthesis Here are the steps:

[0234] 1 mmol of 4,7-dibromo-5,6-difluoro-2-isobutyl-2H-benzo[d][1,2,3]triazole, 3 mmol of (4-(tert-butyl)phenyl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. 10 mL of 1,4-dioxane and 10 mL of deionized water were then added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used, using dichloromethane and petroleum ether (1:4 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a white solid.

[0235] 1 H NMR (500 MHz, Chloroform-d) δ = 7.40–7.36 (m, 4H), 7.36–7.31 (m, 4H), 3.91 (d, J = 7.0, 2H), 2.34 (dh, J = 13.7, 6.9, 1H), 1.34 (s, 18H), 1.04 (d, J = 6.8, 6H). For the H NMR spectrum, see Figure 10. MOLDI-TOF analysis showed a mass of 476.28.

[0236] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example.

[0237] Synthesis Example 3: Synthesis Here are the steps:

[0238] 1 mmol of 4,7-dibromo-5,6-difluoro-2-(2-ethylhexyl)-2H-benzo[d][1,2,3]triazole, 3 mmol of (4-(tert-butyl)phenyl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. Then, 10 mL of 1,4-dioxane and 10 mL of deionized water were added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used with dichloromethane and petroleum ether (1:8 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a white solid.

[0239] 1 H NMR (500 MHz, Chloroform-d) δ = 7.43–7.38 (m, 4H), 7.37–7.31 (m, 4H), 3.91 (dd, J = 12.4, 7.0, 1H), 3.79 (dd, J = 12.4, 7.0, 1H), 2.08 (hept, J = 7.0, 1H), 1.55–1.27 (m, 26H), 0.90 (td, J = 8.0, 1.7, 6H). For the H NMR spectrum, see Figure 11. MOLDI-TOF analysis showed a mass of 531.3.

[0240] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 3.

[0241] Synthesis Example 4: Synthesis Here are the steps:

[0242] 1 mmol of 4,7-dibromo-5,6-difluoro-2-isobutyl-2H-benzo[d][1,2,3]triazole, 3 mmol of (5-isobutylthiophen-2-yl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. 10 mL of 1,4-dioxane and 10 mL of deionized water were then added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used, using dichloromethane and petroleum ether (1:6 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a pale yellow solid.

[0243] 1H NMR (500 MHz, Chloroform-d) δ = 7.28–7.21 (m, 2H), 6.86 (d, J = 7.5, 2H), 3.91 (d, J = 7.0, 2H), 2.60 (d, J = 7.0, 4H), 2.35 (dh, J = 13.6, 6.8, 1H), 1.89 (dh, J = 13.8, 6.9, 2H), 1.04 (d, J = 6.8, 6H), 0.96 (d, J = 6.8, 12H). For the H NMR spectrum, see Figure 12. MOLDI-TOF analysis showed a mass of 487.2.

[0244] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 4.

[0245] Synthesis Example 5: Synthesis Here are the steps:

[0246] (1) Synthesis step 1: Weigh 1 mmol of 4,7-dibromo-5,6-difluoro-2-(2-ethylhexyl)-2H-benzo[d][1,2,3]triazole, 3 mmol of (4-isobutyloxyphenyl)boronic acid, and 3 mmol of potassium carbonate into a 50 mL two-necked flask, connect the flask to a vacuum line, evacuate the flask, and fill it with nitrogen for three cycles to ensure an inert gas atmosphere. Then, add 10 mL of 1,4-dioxane and 10 mL of deionized water, stir thoroughly, and place the reaction mixture at 95 degrees Celsius for 24 hours. After the reaction is completed, add 20 mL of deionized water to quench the reaction, then extract with dichloromethane three times, combine the organic layers, and spin dry to obtain a crude product. Use 200-300 mesh silica gel to prepare a chromatographic column, use dichloromethane and petroleum ether (volume ratio of 1:3) as eluents, collect the blue fluorescent portion, combine the eluents, and spin dry to obtain a white solid.

[0247] 1 H NMR (500 MHz, Chloroform-d) δ = 7.45–7.39 (m, 4H), 6.99–6.93 (m, 4H), 3.91 (dd, J = 12.4, 7.1, 1H), 3.85–3.75 (m, 5H), 2.07 (ddp, J = 13.7, 10.3, 6.9, 3H), 1.57–1.36 (m, 4H), 1.36–1.28 (m, 4H), 1.06 (d, J = 6.8, 6H), 1.01 (d, J = 6.7, 6H), 0.90 (td, J = 8.0, 1.2, 6H). For the H NMR spectrum, see Figure 13. MOLDI-TOF analysis showed a mass of 563.3.

[0248] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 5.

[0249] Synthesis Example 6: Synthesis Here are the steps:

[0250] 1 mmol of 4,7-dibromo-2-isobutyl-5,6-dimethoxy-2H-benzo[d][1,2,3]triazole, 3 mmol of (4-(tert-butyl)phenyl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. Then, 10 mL of 1,4-dioxane and 10 mL of deionized water were added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used with dichloromethane and petroleum ether (1:3 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a white solid.

[0251] 1 H NMR (500 MHz, Chloroform-d) δ = 7.44–7.34 (m, 8H), 3.90 (d, J = 7.0, 2H), 3.79 (s, 6H), 2.34 (dh, J = 13.7, 6.9, 1H), 1.34 (s, 18H), 1.05 (d, J = 6.8, 6H). For the H NMR spectrum, see Figure 14. MOLDI-TOF analysis showed a mass of 499.3.

[0252] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 6.

[0253] Synthesis Example 7: Synthesis Here are the steps:

[0254] 1 mmol of 4,7-dibromo-5,6-diethoxy-2-isobutyl-2H-benzo[d][1,2,3]triazole, 3 mmol of (5-isobutylthiophen-2-yl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. 10 mL of 1,4-dioxane and 10 mL of deionized water were then added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The mixture was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used, using dichloromethane and petroleum ether (1:4 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a pale yellow solid.

[0255] 1 H NMR (500 MHz, Chloroform-d) δ = 7.15 (d, J = 7.5, 2H), 6.86 (d, J = 7.5, 2H), 4.17 (q, J = 8.0, 4H), 3.90 (d, J = 7.0, 2H), 2.61 (d, J = 7.0, 4H), 2.35 (dp, J = 13.6, 6.9, 1H), 1.90 (dp, J = 13.6, 6.9, 2H), 1.43 (t, J = 8.0, 6H), 1.05 (d, J = 6.8, 6H), 0.96 (d, J = 6.8, 12H). For the H NMR spectrum, see Figure 15. MOLDI-TOF analysis showed a mass of 539.3.

[0256] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 7.

[0257] Synthesis Example 8: Synthesis Here are the steps:

[0258] 1 mmol of 4,7-dibromo-5,6-diisobutoxy-2-isobutyl-2H-benzo[d][1,2,3]triazole, 3 mmol of (5-isobutylthiophen-2-yl)boronic acid, and 3 mmol of potassium carbonate were placed in a 50 mL two-necked flask. The flask was connected to a vacuum line and evacuated and filled with nitrogen three times to ensure an inert atmosphere. Then, 10 mL of 1,4-dioxane and 10 mL of deionized water were added. After thorough stirring, the reaction mixture was placed at 95°C for 24 hours. After completion of the reaction, 20 mL of deionized water was added to quench the reaction. The product was then extracted three times with dichloromethane. The organic layers were combined and dried to obtain the crude product. A 200-300 mesh silica gel preparative chromatography column was used, using dichloromethane and petroleum ether (1:4 by volume) as the eluent. The blue fluorescent fraction was collected, the eluents were combined, and the extracts were dried to obtain a pale yellow solid.

[0259] 1H NMR (500 MHz, Chloroform-d) δ = 7.15 (d, J = 7.5, 2H), 6.85 (d, J = 7.5, 2H), 3.94 (d, J = 7.0, 4H), 3.90 (d, J = 7.0, 2H), 2.61 (d, J = 7.0, 4H), 2.35 (hept, J = 6.9, 1H), 2.08 (dh, J = 13.7, 6.9, 2H), 1.90 (dp, J = 13.6, 6.9, 2H), 1.04 (dd, J = 8.6, 6.8, 18H), 0.96 (d, J = 6.8, 12H). For the H NMR spectrum, see Figure 16. MOLDI-TOF analysis showed a mass of 595.3.

[0260] Combining the results of hydrogen nuclear magnetic resonance spectrum and mass spectrum, it can be seen that the target compound was synthesized in this synthesis example 8.

[0261] Device Example 1

[0262] This embodiment provides a solar cell shown in FIG3 , a photovoltaic device shown in FIG4 , and a manufacturing method thereof, as shown below:

[0263] 1. Prepare the solar cell shown in Figure 3 in the following steps:

[0264] First, a 280μm thick silicon wafer is cleaned and textured, and then a 2nm thick first amorphous silicon layer and a 2nm thick second amorphous silicon layer are made in PECVD, and then a 5nm thick N-type doped layer is made, and then a 10nm thick P-type amorphous silicon layer is made. Subsequently, a 20nm thick second transparent conductive layer is made on the N-type doped layer by magnetron sputtering, and a 40nm thick third transparent conductive layer is made on the P-type doped layer, and a second gate electrode layer is printed thereon, and then a 10nm thick hole transport layer is made on the second transparent conductive layer, and then a 1nm thick hole modification layer is deposited. Subsequently, a 0.8μm thick perovskite active layer is deposited by solution method, and then a 20nm thick second electron transport layer is deposited by thermal evaporation, and a 20nm thick first electron transport layer is deposited by atomic layer deposition. Then, an 80nm thick first transparent conductive layer is made on the first electron transport layer by magnetron sputtering, and then 80nm thick MgFx is magnetron sputtered on the surface of the first transparent conductive layer, and then the first gate electrode layer is printed to obtain a solar cell.

[0265] 2. Prepare the photovoltaic device shown in Figure 4 by the following steps:

[0266] (1) Ethylene vinyl acetate, the benzotriazole compound shown in Synthesis Example 1, tert-butyl peroxycarbonate-2-ethylhexyl ester (TBEC), silane coupling agent KH570, and antioxidant 152 are mixed and dried to form a film to prepare a photovoltaic film, which can be called a light-converting film;

[0267] The light-converting adhesive film comprises, by mass percentage, 99% ethylene vinyl acetate, 0.2% of the benzotriazole compound described in Synthesis Example 1, 0.3% TBEC, 0.3% silane coupling agent KH570, and 0.2% antioxidant 152;

[0268] (2) Select a glass front panel of the required size, cut the above-mentioned light-converting film to a matching size, lay it on the glass front panel, then lay a solar cell string with electrical connections, and then lay a second layer of film and a glass back panel. Lamination in a laminator can obtain a component laminate. Then install a junction box and a metal frame to obtain the photovoltaic device shown in Figure 4.

[0269] Device Example 2

[0270] This embodiment provides a solar cell shown in FIG3 , a photovoltaic device shown in FIG4 , and a manufacturing method thereof, as shown below:

[0271] 1. Prepare the solar cell shown in FIG3 , using the same steps as in device embodiment 1.

[0272] 2. Prepare the photovoltaic device shown in FIG4 . The steps are basically the same as those in device embodiment 1, except that:

[0273] Calculated by mass percentage, the light-converting adhesive film includes 99.5% of ethylene octene copolymer elastomer and 0.5% of the benzotriazole compound of Synthesis Example 2.

[0274] Device Example 3

[0275] This embodiment provides a solar cell shown in FIG3 , a photovoltaic device shown in FIG4 , and a manufacturing method thereof, as shown below:

[0276] 1. Prepare the solar cell shown in FIG3 , using the same steps as in device embodiment 1.

[0277] 2. Prepare the photovoltaic device shown in FIG4 . The steps are basically the same as those in device embodiment 1, except that:

[0278] Calculated by mass percentage, the light conversion film composition includes 99% of Dow DC184 silicone polymer resin, 0.5% of the benzotriazole compound of Synthesis Example 3, and 0.5% of antioxidant 152.

[0279] Device Examples 4 to 8 and Device Comparative Examples 1 to 3 refer to the method of Device Example 1 and the contents shown in Table 1, and replace the type of light conversion agent to prepare different solar cells and photovoltaic devices. Among them, the light conversion agents used in Device Comparative Examples 1 to 3 were purchased from Zhengzhou Alpha Chemical Co., Ltd.

[0280] The solar cells and photovoltaic devices of device examples 1 to 8 and device comparative examples 1 to 3 were subjected to performance tests using the following test methods:

[0281] (1) Light conversion efficiency: the ratio of the number of photons emitted as secondary fluorescence to the number of photons absorbed as primary excitation light per unit time. The results are shown in Table 1.

[0282] (2) Photovoltaic efficiency: The photovoltaic cell efficiency was tested using an IV test system at AM1.5G and 25°C. The results are shown in Table 1.

[0283] (3) T80 test: Using AM1.5G to simulate the xenon lamp spectrum, the battery continuously tracks at the maximum power point. The time it takes for the battery efficiency to decay to 80% is shown in Table 1.

[0284] Table 1

[0285] As can be seen from Table 1, compared with device comparative examples 1 to 3, device examples 1 to 8 respectively use the benzotriazole organic compounds of synthesis examples 1 to 8 of the present application as light conversion agents, and the photovoltaic modules prepared have higher light conversion efficiency, photovoltaic efficiency and life.

[0286] Device Example 9

[0287] This embodiment provides a solar cell and a method for manufacturing the same as shown in FIG6 , and the steps are as follows:

[0288] (1) A 280 μm thick silicon wafer is cleaned and textured, and then a 2 nm thick first amorphous silicon layer and a 2 nm thick second amorphous silicon layer are made in PECVD, and then a 5 nm thick N-type doped layer is made, and then a 10 nm thick P-type amorphous silicon layer is made, and then a 20 nm thick second transparent conductive layer is made on the N-type doped layer by magnetron sputtering, and a 40 nm thick third transparent conductive layer is made on the P-type doped layer, and a second gate electrode layer is printed thereon, and then a 10 nm thick hole transport layer is made on the second transparent conductive layer, and then a 1 nm thick hole modification layer is deposited, and then a 0.8 μm thick perovskite active layer is deposited by solution method, and then a 20 nm thick second electron transport layer is deposited by thermal evaporation, and a 20 nm thick first electron transport layer is deposited by atomic layer deposition, and then a 80 nm thick first transparent conductive layer is made on the first electron transport layer by magnetron sputtering;

[0289] (2) Weigh 1 g of hydrogenated silicone oil (crosslinker component of Dow Chemical 184 silica gel), add 11 mg of the benzotriazole compound of Synthesis Example 5, and then add 10 g of double-bond terminated PDMS, stir evenly, and degas under vacuum to form a transparent solution; select a 10 cm × 10 cm textured silicon wafer with a pyramid height of 0.5 μm, and then introduce 10 mL of the above transparent solution on its surface, use a glue roller, and spin coat at a speed of 500 rpm for 60 seconds, then heat the silicon wafer to 120 ° C and maintain for 15 minutes to complete curing, then cool to room temperature, and peel off to obtain a photovoltaic film with a pyramid structure;

[0290] (3) attaching the smooth surface of the photovoltaic film to the surface of the first transparent conductive layer and the surface of the third transparent conductive layer, respectively serving as the second anti-reflection layer and the third anti-reflection layer;

[0291] (4) Printing the first grid line electrode layer to obtain the solar cell shown in FIG6 .

[0292] Device Comparative Example 4

[0293] Device Comparative Example 4 is substantially the same as Device Example 9, except that, by weight, both the second anti-reflection layer and the third anti-reflection layer consist of 99.9% EVA and 0.1% UV-329.

[0294] The IV and EQE performance of the solar cells prepared from Device Example 9 and Device Comparative Example 4 were tested, and the results are shown in Figures 17 and 18. Figure 17 is an IV diagram of Device Example 9 and Device Comparative Example 4. As shown in Figure 17, Device Example 9 has a significant improvement in short-circuit current density, thereby improving cell efficiency. Figure 18 is an EQE diagram of Device Example 9 and Device Comparative Example 4. As shown in Figure 18, compared to Device Comparative Example 4, Device Example 9 has a significant improvement in the short-wave direction. The overall EQE response and short-circuit current density are also improved due to the presence of the anti-reflection film.

[0295] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0296] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A benzotriazole organic compound, characterized in that: Its general structural formula is shown in formula (1): wherein each Ar independently comprises a substituted or unsubstituted aromatic group, or a substituted or unsubstituted heteroaromatic group; R1 and R2 are independently selected from substituted or unsubstituted alkyl, or substituted or unsubstituted alkoxy; R3 and R4 are independently selected from halogen, substituted or unsubstituted alkoxy, or substituted or unsubstituted alkylthio; R5 is selected from substituted or unsubstituted alkyl groups.

2. The benzotriazole organic compound according to claim 1, characterized in that: Each Ar independently includes a substituted or unsubstituted aromatic group having 6 to 30 ring atoms, or a substituted or unsubstituted heteroaromatic group having 5 to 30 ring atoms.

3. The benzotriazole organic compound according to claim 2, characterized in that: Each Ar is independently selected from a substituted or unsubstituted six-membered aromatic group, a substituted or unsubstituted six-membered heteroaromatic group, or a substituted or unsubstituted five-membered heteroaromatic group.

4. The benzotriazole organic compound according to claim 3, characterized in that: Each Ar is independently selected from one of the following groups: Wherein, * represents a connection site, and X represents O, S or Se.

5. The benzotriazole organic compound according to any one of claims 1 to 4, characterized in that: The R1 and R2 are independently selected from substituted or unsubstituted C1 to C 20 Alkyl, or substituted or unsubstituted C1~C 20 Alkoxy.

6. The benzotriazole organic compound according to claim 5, characterized in that: The R1 and R2 are independently selected from one of the following groups: Wherein, * indicates the connection site, and n1≥2.

7. The benzotriazole organic compound according to any one of claims 1 to 6, characterized in that: The R3 and R4 are independently selected from halogen, substituted or unsubstituted C1-C 20 Alkoxy, or substituted or unsubstituted C1~C 20 Alkylthio.

8. The benzotriazole organic compound according to claim 7, characterized in that: The R3 and R4 are independently selected from one of the following groups: Wherein, * represents a connection site, Y represents F, Cl, Br or I, and each R6 is independently selected from substituted or unsubstituted C1 to C 20 Straight chain alkyl, or substituted or unsubstituted C3~C 20 Branched chain alkyl.

9. The benzotriazole organic compound according to any one of claims 1 to 8, characterized in that: The R5 is selected from substituted or unsubstituted C1 to C 20 alkyl.

10. The benzotriazole organic compound according to claim 9, characterized in that: The R5 is selected from one of the following groups: Wherein, * indicates the connection site, and n2≥2.

11. The benzotriazole organic compound according to any one of claims 1 to 10, characterized in that: Has any of the following structures:

12. A method for preparing a benzotriazole organic compound according to any one of claims 1 to 11, characterized in that: The following steps are involved: Mixing compound (a), compound (b), compound (c) and a base in a solvent, and reacting them to prepare the benzotriazole organic compound; R1, R2, R3, R4 and R5 are as defined in any one of claims 1 to 11.

13. A light conversion agent, characterized in that: The invention comprises the benzotriazole organic compound according to any one of claims 1 to 11.

14. The light conversion agent according to claim 13, characterized in that: The absorption wavelength range of the light conversion agent is about 280 nm to about 400 nm.

15. The light conversion agent according to claim 13 or 14, characterized in that: The maximum absorption peak of the light conversion agent is about 320 nm to about 380 nm.

16. The light conversion agent according to any one of claims 13 to 15, characterized in that: The photoluminescence range of the light conversion agent is about 400 nm to about 600 nm.

17. The light conversion agent according to any one of claims 13 to 16, characterized in that: The maximum emission peak of the light conversion agent is about 450 nm to about 550 nm.

18. A photovoltaic adhesive film, characterized in that: It comprises the benzotriazole organic compound according to any one of claims 1 to 11, or the light conversion agent according to any one of claims 13 to 17.

19. The photovoltaic adhesive film according to claim 18, characterized in that: The composition also includes an optically transparent polymer material.

20. The photovoltaic adhesive film according to claim 19, characterized in that: In terms of mass percentage, the photovoltaic adhesive film comprises about 0.01% to about 5% of the benzotriazole organic compound according to any one of claims 1 to 11 or the light conversion agent according to any one of claims 13 to 17, and about 95% to about 99.99% of the polymer material.

21. The photovoltaic adhesive film according to claim 19 or 20, characterized in that: The polymer material is selected from one or more of polyolefin elastomer, ethylene-vinyl acetate copolymer, polyvinyl butyral and silicone resin materials.

22. The photovoltaic adhesive film according to claim 21, characterized in that: The organic silicone resin material comprises a mixture of hydrogen-containing silicone oil and vinyl-terminated polydimethylsiloxane in a mass ratio of about 1:(2-15).

23. A photovoltaic device, characterized in that: It comprises a solar cell, at least one surface of which is provided with the photovoltaic adhesive film according to any one of claims 18 to 22.

24. The photovoltaic device according to claim 23, characterized in that: The solar cell includes one or more of a crystalline silicon solar cell, a perovskite solar cell, and a stacked cell consisting of a perovskite cell and a crystalline silicon cell.

25. The photovoltaic device according to claim 24, characterized in that: The solar cell is a stacked cell composed of a perovskite cell and a crystalline silicon cell, and the solar cell comprises a first transparent conductive layer, an electron transport layer, a perovskite active layer, a hole transport layer, a second transparent conductive layer, an N-type doped layer, a first amorphous silicon layer, a silicon wafer, a second amorphous silicon layer, a P-type doped layer, a third transparent conductive layer, and a first grid line electrode layer and a second grid line electrode layer, which are stacked in sequence; The first gate line electrode layer includes a plurality of first gate line electrodes arranged at intervals, and each of the first gate line electrodes is electrically connected to the first transparent conductive layer; The second gate line electrode layer includes a plurality of second gate line electrodes arranged at intervals, and each of the second gate line electrodes is electrically connected to the third transparent conductive layer.

26. The photovoltaic device according to claim 25, characterized in that: The photovoltaic device further comprises a light-incident panel and a backlight panel, wherein the light-incident panel is stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the backlight panel is stacked on a surface of the third transparent conductive layer away from the perovskite active layer; The surface of the solar cell is covered by the photovoltaic adhesive film.

27. The photovoltaic device according to claim 25 or 26, characterized in that: The solar cell further comprises a first anti-reflection layer, which is stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the first gate electrode is penetrated through the first anti-reflection layer and is electrically connected to the first transparent conductive layer; The material of the first anti-reflection layer includes one or more of magnesium fluoride, lithium fluoride, silicon nitride, silicon oxide and silicon oxynitride.

28. The photovoltaic device according to any one of claims 25 to 27, characterized in that: The solar cell further comprises a second anti-reflection layer, which is stacked on a surface of the first transparent conductive layer away from the perovskite active layer, and the first gate electrode is penetrated through the second anti-reflection layer and is electrically connected to the first transparent conductive layer; The second anti-reflection layer comprises the patterned photovoltaic adhesive film according to claim 22.

29. The photovoltaic device according to any one of claims 25 to 28, characterized in that: The solar cell further comprises a third anti-reflection layer, the third anti-reflection layer is stacked on a surface of the third transparent conductive layer away from the perovskite active layer, and the second gate line electrode is penetrated through the third anti-reflection layer and is electrically connected to the third transparent conductive layer; The third anti-reflection layer comprises the patterned photovoltaic adhesive film according to claim 22.

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