Integrated light-emitting and detecting device and manufacturing method therefor

Abstract

Disclosed in the present application are an integrated light-emitting and detecting device and a manufacturing method therefor. The device successively comprises a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer and a top electrode, wherein the transistor layer comprises a first transistor and a second transistor, a first gate of the first transistor being connected to the bottom electrode via a first through hole, and a second source of the second transistor being connected to the bottom electrode via a second through hole. The first transistor is used for detecting a photocurrent or photovoltage generated by the light-emitting layer; the second transistor is used for controlling the light-emitting state of the light-emitting layer; the first through hole is used for providing an electric connection between the first gate and the bottom electrode, so as to equalize the voltage of the first gate and the voltage of the bottom electrode; the second through hole is used for providing an electric connection between the second source and the bottom electrode. In the embodiments of the present application, the detecting device having both a photoelectric detection function and an electroluminescent function has a small size and a simple structure, and is easy to manufacture and widely appliable to the field of photoelectric devices.

Description

Luminescence detection integrated device and preparation method thereof Technical Field

[0001] The present application relates to the field of optoelectronic devices, and in particular to an integrated luminescence and detection device and a method for preparing the same. Background Art

[0002] Currently, widely used photodetectors include photodiodes and light-emitting diodes. The structure of a photodiode, from bottom to top, consists of a transparent electrode, a hole transport layer, a photosensitive layer, an electron transport layer, and a metal electrode. The working principle of a photodiode is as follows: the photosensitive layer absorbs photons that pass through the transparent electrode and generates electron-hole pairs. These electron-hole pairs dissociate under the action of an internal electric field and are then transferred to the electrodes on either side under an external reverse bias, forming a current. The structure of a light-emitting diode, from bottom to top, consists of a transparent electrode, a hole transport layer, a light-emitting layer, an electron transport layer, and a metal electrode. The working principle of a light-emitting diode is as follows: applying a forward voltage to both sides of the electrodes causes electrons and holes to be injected from the electrodes, pass through the transport layer, and finally enter the light-emitting layer to recombine and emit light.

[0003] However, most existing photodiode detectors and light-emitting diode detectors are single discrete detection devices, which cannot meet people's needs for photoelectric detectors in terms of system integration. In addition, to achieve the functions of light emission and detection at the same time, photodiodes and light-emitting diodes need to be used at the same time, resulting in a larger size of the detection device. Summary of the Invention

[0004] In view of this, the purpose of the embodiments of the present application is to provide an integrated luminescence detection device and a preparation method thereof, so as to realize a detection device that has both photoelectric detection function and electroluminescence function, which can be switched between photoelectric detection mode and electroluminescence mode, and the detection device is small in size, simple in structure, and easy to prepare.

[0005] In a first aspect, an embodiment of the present application provides an integrated luminescence detection device, comprising, in sequence, a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer, and a top electrode; wherein the transistor layer comprises a first transistor and a second transistor, the first transistor comprises a first gate and a first through-hole, the first gate being connected to the bottom electrode through the first through-hole; the second transistor comprises a second source and a second through-hole, the second source being connected to the bottom electrode through the second through-hole; wherein,

[0006] A transparent substrate for supporting the transistor layer, the bottom electrode, the light-emitting layer, and the top electrode;

[0007] a first transistor for detecting a photovoltage generated by the light-emitting layer;

[0008] A second transistor is used to control the light-emitting state of the light-emitting layer or detect the photocurrent;

[0009] a first through hole, configured to provide electrical connection between the first gate and the bottom electrode, so that a voltage of the first gate is the same as a voltage of the bottom electrode;

[0010] a second through hole, for providing electrical connection between the second source electrode and the bottom electrode;

[0011] a bottom electrode for transmitting voltage between the light-emitting layer and the transistor layer;

[0012] A light-emitting layer for emitting light or absorbing light to generate photocurrent;

[0013] The top electrode is used to apply voltage to the light-emitting layer.

[0014] Optionally, the first transistor also includes a first semiconductor layer, a first source, a first drain and a first dielectric layer; the first source and the first drain are respectively arranged on both sides of the first semiconductor layer; the first gate is separated from the first semiconductor layer by a first preset distance; and the first dielectric layer fills the vacant part of the first transistor.

[0015] Optionally, the second transistor also includes a second semiconductor layer, a second drain, a second gate and a second dielectric layer; wherein the second source and the second drain are arranged on both sides of the second semiconductor layer; the second gate is separated from the second semiconductor layer by a second preset distance; and the second dielectric layer fills the vacant part of the second transistor.

[0016] Optionally, the first transistor and the second transistor have the same thickness, and a first dielectric layer is spaced between the first drain and the second source.

[0017] Optionally, the bottom electrode includes a transparent electrode or a metal electrode, the top electrode includes a transparent electrode or a metal electrode, and at least one of the bottom electrode and the top electrode allows light to pass through.

[0018] In a second aspect, an embodiment of the present application provides a screen based on an integrated light-emitting detection device, comprising a detection tube drain controller, a detection tube source controller, a driver tube gate controller, a driver tube drain controller, and several integrated light-emitting detection devices as described above; several integrated light-emitting detection devices form an array, and the four ports of each integrated light-emitting detection device are respectively connected to the detection tube drain controller, the detection tube source controller, the driver tube gate controller, and the driver tube drain controller, wherein,

[0019] Luminescence detection integrated device, used for emitting light or detecting light intensity;

[0020] A detection tube drain end controller and a detection tube source end controller, used for providing an operating voltage for the first transistor;

[0021] The driving tube gate controller and the driving tube drain controller are used to provide an operating voltage for the second transistor.

[0022] In a third aspect, an embodiment of the present application provides a method for preparing an integrated luminescence detection device, which is applied to the integrated luminescence detection device described above, comprising:

[0023] Pre-treating the transparent substrate;

[0024] A transistor layer is prepared on the pre-treated transparent substrate; the transistor layer includes a first transistor and a second transistor;

[0025] preparing a bottom electrode on the transistor layer;

[0026] preparing a light-emitting layer on the bottom electrode;

[0027] A top electrode is prepared on the light-emitting layer.

[0028] Optionally, a transistor layer is prepared on the pretreated transparent substrate, where the transistor layer includes a first transistor and a second transistor, specifically comprising:

[0029] preparing a semiconductor layer on the pretreated transparent substrate, removing a portion of the semiconductor layer to obtain a first semiconductor layer and a second semiconductor layer;

[0030] A first source electrode and a first drain electrode are respectively formed on both sides of the first semiconductor layer, and a second source electrode and a second drain electrode are respectively formed on both sides of the second semiconductor layer;

[0031] A dielectric having a first preset height is applied to the first semiconductor layer, the first source electrode, the first drain electrode, and between the first drain electrode and the second source electrode, and a dielectric having a second preset height is applied to the second semiconductor layer, the second source electrode, and the second drain electrode;

[0032] forming a first gate at a first predetermined position on the dielectric of the first transistor, and forming a second gate at a second predetermined position on the dielectric of the second transistor;

[0033] filling the remaining vacant positions in the first transistor with a dielectric to prepare a first dielectric layer;

[0034] filling the remaining vacant positions in the second transistor with a dielectric to prepare a second dielectric layer;

[0035] Disposing a first through hole on the first gate that penetrates the dielectric between the first gate and the bottom electrode so as to generate an electrical connection between the first gate and the bottom electrode;

[0036] A second through hole is provided on the second source electrode and penetrates the dielectric between the second source electrode and the bottom electrode, so as to generate an electrical connection between the second source electrode and the bottom electrode.

[0037] Optionally, preparing a semiconductor layer on the pretreated transparent substrate, removing part of the semiconductor layer to obtain a first semiconductor layer and a second semiconductor layer, specifically includes:

[0038] A semiconductor layer is prepared on the pretreated transparent substrate by a preset method; the preset method includes any one of spin coating, blade coating, drop coating, spray coating, evaporation, sputtering or inkjet printing; sputtering includes magnetron sputtering;

[0039] removing a predetermined portion of the semiconductor layer by etching, wherein the etching comprises wet etching with hydrochloric acid;

[0040] or, patterning the semiconductor layer by photolithography;

[0041] A first semiconductor layer and a second semiconductor layer are obtained.

[0042] Optionally, when the bottom electrode or the top electrode is a transparent electrode, preparing the bottom electrode or preparing the top electrode specifically includes:

[0043] The bottom electrode or the top electrode is prepared by any method including spin coating, doctor blade coating, drop coating, spray coating, evaporation, inkjet printing or roll-to-roll printing.

[0044] The implementation of the embodiments of the present application includes the following beneficial effects: the present embodiment provides an integrated luminescence detection device, which includes a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer and a top electrode in sequence; wherein the transistor layer includes a first transistor and a second transistor, the first transistor includes a first gate and a first through-hole, the first gate is connected to the bottom electrode through the first through-hole; the second transistor includes a second source and a second through-hole, the second source is connected to the bottom electrode through the second through-hole; wherein the first transistor is used to detect the photovoltage generated by the light-emitting layer; the second transistor is used to control the light-emitting state of the light-emitting layer; the first through-hole is used to provide an electrical connection between the first gate and the bottom electrode, so that the voltage of the first gate is connected to the bottom electrode. The voltage of the bottom electrode is the same; the second through hole is used to provide an electrical connection between the second source and the bottom electrode; the bottom electrode is used to transfer the voltage between the light-emitting layer and the transistor layer; the light-emitting layer is used to emit light, or absorb light, thereby generating a photocurrent; the top electrode is used to apply a voltage to the light-emitting layer; by applying different voltages to the first transistor or the second transistor, combined with the different voltages applied to the top electrode, the integrated light-emitting detection device is controlled to operate in a photodetection mode or an electroluminescence mode, wherein the photodetection mode includes a photocurrent detection mode and a photovoltage detection mode, the photocurrent mode is conducive to photodetection under weaker light intensities, and the photovoltage mode is conducive to photodetection under stronger light intensities. This embodiment also provides a method for preparing an integrated light-emitting detection device, wherein a transistor layer, a bottom electrode, a light-emitting layer and a top electrode are sequentially prepared on a transparent substrate, wherein the transistor layer includes a first transistor and a second transistor in the same layer, adopts a stacked structure, has a simple structure, is easy to prepare, and realizes a small-volume integrated light-emitting detection device. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] FIG1 is a schematic structural diagram of an integrated luminescence detection device provided in an embodiment of the present application;

[0046] FIG2 is a schematic circuit diagram of an integrated light emitting and detecting device in a photocurrent detection mode provided in an embodiment of the present application;

[0047] FIG3 is a schematic circuit diagram of an integrated light emitting and detecting device in a photovoltage detection mode provided in an embodiment of the present application;

[0048] FIG4 is a schematic structural diagram of a luminescence detection array provided in an embodiment of the present application;

[0049] FIG5 is a schematic flow chart of a method for preparing an integrated luminescence detection device according to an embodiment of the present application;

[0050] FIG6 is a schematic structural diagram of another integrated luminescence detection device provided in an embodiment of the present application.

[0051] Explanation of the reference numerals: 1. End 1 of the integrated luminescence detection device; 2. End 2 of the integrated luminescence detection device; 3. End 3 of the integrated luminescence detection device; 4. End 4 of the integrated luminescence detection device; 5. End 5 of the integrated luminescence detection device. DETAILED DESCRIPTION

[0052] The present application will be further described in detail below with reference to the accompanying drawings and specific embodiments. The step numbers in the following embodiments are provided for ease of explanation only and do not limit the order of the steps. The order of execution of the steps in the embodiments can be adaptively adjusted based on the understanding of those skilled in the art.

[0053] In the following description, reference is made to “some embodiments”, which describes a subset of all possible embodiments, but it will be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0054] In the following description, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described herein can be implemented in an order other than that illustrated or described herein.

[0055] Unless otherwise defined, all technical and scientific terms used in the embodiments of this application have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used in the embodiments of this application are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0056] As shown in FIG1 , an embodiment of the present application provides an integrated luminescence detection device, which includes a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer, and a top electrode in sequence; wherein the transistor layer includes a first transistor and a second transistor, the first transistor includes a first gate and a first through-hole, and the first gate is connected to the bottom electrode through the first through-hole; the second transistor includes a second source and a second through-hole, and the second source is connected to the bottom electrode through the second through-hole; wherein,

[0057] A transparent substrate for supporting the transistor layer, the bottom electrode, the light-emitting layer, and the top electrode;

[0058] a first transistor, for detecting a photocurrent or a photovoltage generated by the light-emitting layer;

[0059] a second transistor, used to control the light-emitting state of the light-emitting layer;

[0060] a first through hole, configured to provide electrical connection between the first gate and the bottom electrode, so that a voltage of the first gate is the same as a voltage of the bottom electrode;

[0061] a second through hole, for providing electrical connection between the second source electrode and the bottom electrode;

[0062] a bottom electrode for transmitting voltage between the light-emitting layer and the transistor layer;

[0063] A light-emitting layer for emitting light or absorbing light to generate photocurrent;

[0064] The top electrode is used to apply voltage to the light-emitting layer.

[0065] Specifically, the integrated luminescence detection device includes, from bottom to top, a transparent substrate, a transistor layer, a bottom electrode, a luminescent layer, and a top electrode. The luminescent layer includes a light-emitting diode (LED); the transistor layer consists of a first transistor and a second transistor, the first transistor serving as a detection transistor and the second transistor serving as a luminescent transistor; the first transistor includes a first gate and a first through-hole, the first gate being connected to the bottom electrode through the first through-hole so that the voltages of the first gate and the bottom electrode are the same, and the voltage change generated by the LED directly acts on the first transistor, thereby achieving photovoltage detection; the second transistor includes a second source and a second through-hole, the second source being connected to the bottom electrode through the second through-hole so that when the second transistor is turned on, a negative bias is applied to the bottom electrode through the second source, thereby putting the LED in a forward bias mode and emitting light; the top electrode is connected to an external circuit, and different voltages need to be applied to the integrated luminescence detection device through the top electrode when the integrated luminescence detection device is in different operating modes.

[0066] Specifically, the operating modes of the integrated luminescence and detection device include a photoelectric detection mode and an electroluminescence mode, wherein the photoelectric detection mode includes a photocurrent detection mode and a photovoltage detection mode.

[0067] Specifically, the first transistor includes an N-type transistor or a P-type transistor, and the second transistor includes an N-type transistor or a P-type transistor.

[0068] Specifically, the integrated luminescence detection device also includes terminals 1-5, the first source is connected to the external circuit through terminal 1, the first drain is connected to the external circuit through terminal 2, the second drain is connected to the external circuit through terminal 3, the second gate is connected to the external circuit through terminal 4, and the top electrode is connected to the external circuit through terminal 5.

[0069] Specifically, the transparent substrate is a non-conductive transparent substrate, including a rigid inorganic substrate or a flexible organic substrate.

[0070] Optionally, the first transistor also includes a first semiconductor layer, a first source, a first drain and a first dielectric layer; the first source and the first drain are respectively arranged on both sides of the first semiconductor layer; the first gate is separated from the first semiconductor layer by a first preset distance; and the first dielectric layer fills the vacant part of the first transistor.

[0071] Specifically, when the distance between the first semiconductor layer and the bottom electrode is relatively far, it is necessary to set a first gate at a first preset distance, and connect the first gate and the bottom electrode through a first through hole, so that the voltage change generated by the light-emitting layer directly acts on the first transistor; when the distance between the first semiconductor layer and the bottom electrode is relatively close, the first gate can be omitted and the bottom electrode can be used as the gate of the first transistor.

[0072] Specifically, the first preset distance is determined according to actual conditions and is not limited in the embodiments of the present application.

[0073] Specifically, as shown in Figure 2, in the photocurrent detection mode, when both the first transistor and the second transistor are N-type transistors, a positive bias is applied to the second gate to turn on the second transistor; a positive bias is applied to the second drain, and a negative bias is applied to the top electrode to put the LED in a reverse bias state; when the LED is illuminated, the LED absorbs photons to generate electron-hole pairs. Under the action of the negative bias, electrons flow to the bottom electrode, and holes flow to the top electrode, generating a reverse bias current that conducts toward the bottom electrode. Since the second source of the second transistor is connected to the bottom electrode through the second through hole, the second transistor is in an open state. The reverse bias current passes through the second through hole and the second transistor, and is output from the second drain. The second drain is connected to the measurement circuit to measure the reverse bias current, thereby realizing the detection of photocurrent, and then detecting light intensity through the photocurrent.

[0074] Specifically, a positive bias is applied to the second gate, the second semiconductor layer between the second source and the second drain is in a low resistance state, and a current or voltage signal can be transmitted between the second source and the second drain.

[0075] Specifically, as shown in Figure 3, in the photovoltage detection mode, when the first transistor and the second transistor are both N-type transistors, a preset voltage is applied to the second gate to turn off the second transistor; a positive bias is applied to the top electrode; the first source and the first drain are respectively connected to the external circuit, and different voltages are applied to the first source and the first drain to generate a voltage difference between the first source and the first drain; when the LED is illuminated, the photovoltage generated by the LED changes, causing the potential of the second gate connected to the bottom electrode to change, thereby causing the current between the first source and the first drain to change; photoelectric detection is achieved by measuring the current between the first source and the first drain, thereby achieving light intensity detection.

[0076] Specifically, the preset voltage includes a low voltage or a negative voltage; when the preset voltage is applied to the second gate, the second semiconductor layer between the second source and the second drain is in a high resistance state, and neither current nor voltage signals can pass between the second source and the second drain.

[0077] Optionally, the second transistor also includes a second semiconductor layer, a second drain, a second gate and a second dielectric layer; wherein the second source and the second drain are arranged on both sides of the second semiconductor layer; the second gate is separated from the second semiconductor layer by a second preset distance; and the second dielectric layer fills the vacant part of the second transistor.

[0078] Specifically, the first source and the first drain are connected to an external circuit. In electroluminescence mode, when both the first transistor and the second transistor are N-type transistors, a positive bias is applied to the second gate and a negative bias is applied to the second drain, turning on the second transistor. Simultaneously, because the bottom electrode is connected to the second source via the second through-hole, and the second drain and the second source are respectively disposed on opposite sides of the second semiconductor layer, a positive bias is also applied to the bottom electrode. The voltage applied to the top electrode is zero, and the LED is in a forward-biased mode. Holes and electrons are injected into the LED from the bottom and top electrodes, respectively, for composite light emission, with the emitted light being output from one side of the transparent electrode.

[0079] Optionally, the first transistor and the second transistor have the same thickness, and a first dielectric layer is spaced between the first drain and the second source.

[0080] Specifically, the first drain and the second source are separated by a third preset distance, and a dielectric is filled between the first drain and the second source; the second through hole is perpendicular to the second source; wherein the third preset distance is determined according to actual conditions and is not limited in the embodiment of the present application.

[0081] Optionally, the bottom electrode includes a transparent electrode or a metal electrode, the top electrode includes a transparent electrode or a metal electrode, and at least one of the bottom electrode and the top electrode allows light to pass through.

[0082] Specifically, the luminescence and detection integrated device can be adjusted to be in a top emission mode or a bottom emission mode by adjusting the bottom electrode and the top electrode to be a transparent electrode or a metal electrode respectively.

[0083] Specifically, when the bottom electrode is a metal electrode and the top electrode is a transparent electrode, the integrated luminescence and detection device is in a top emission mode, and the light emitted by the luminescent layer is emitted from the direction of the top electrode. When the bottom electrode is a transparent electrode and the top electrode is a metal electrode, the integrated luminescence and detection device is in a bottom emission mode, and the light emitted by the luminescent layer is emitted from the direction of the bottom electrode.

[0084] The embodiment of the present application also provides a screen based on an integrated light-emitting detection device, comprising a detection tube drain controller, a detection tube source controller, a driver tube gate controller, a driver tube gate controller, and a plurality of the above-mentioned integrated light-emitting detection devices; the plurality of integrated light-emitting detection devices form an array, and the four ports of each integrated light-emitting detection device are respectively connected to the detection tube drain controller, the detection tube source controller, the driver tube gate controller, and the driver tube gate controller, wherein:

[0085] Luminescence detection integrated device, used for emitting light or detecting light intensity;

[0086] A detection tube drain end controller and a detection tube source end controller, used for providing an operating voltage for the first transistor;

[0087] The driving tube gate controller and the driving tube gate controller are used to provide an operating voltage for the second transistor.

[0088] In a specific embodiment, as shown in FIG4 , nine integrated luminescence detection devices are connected to form a 3×3 luminescence detection array, which includes nine integrated luminescence detection devices, a detection tube drain controller, a detection tube source controller, a driver tube gate controller, and a driver tube gate controller. Terminal 1 of each of the nine integrated luminescence detection devices is connected to the detection tube drain controller, terminals 2 of each of the nine integrated luminescence detection devices are connected to the detection tube source controller, terminals 3 of each of the nine integrated luminescence detection devices are connected to the driver tube drain controller, terminals 4 of each of the nine integrated luminescence detection devices are connected to the driver tube gate controller, and terminals 5 of the nine integrated luminescence detection devices are connected together.

[0089] Specifically, the detection tube drain end controller and the detection tube source end controller provide working voltage for one row / column or several rows / columns of the luminescence detection integrated devices in the luminescence detection array, so that the luminescence detection integrated devices operate in the photoelectric detection mode; the driving tube drain controller and the driving tube gate controller provide working voltage for one row / column or several rows / columns of the luminescence detection integrated devices in the luminescence detection array, so that the luminescence detection integrated devices operate in the electroluminescence mode.

[0090] As shown in FIG5 , an embodiment of the present application further provides a method for preparing an integrated luminescence detection device, which is applied to the integrated luminescence detection device described above, comprising:

[0091] S100: Pre-treating the transparent substrate.

[0092] Specifically, the transparent substrate is pretreated, including:

[0093] S101, cleaning the transparent substrate and drying it in an oven;

[0094] S102, before using the transparent substrate, cleaning the transparent substrate with a plasma surface cleaner for a preset time;

[0095] S103, preparing a buffer layer on the transparent substrate.

[0096] In a specific embodiment, a luminescence detection integrated device as shown in FIG6 is prepared, wherein the transparent substrate is a glass substrate, and pretreatment is performed on the glass substrate, including:

[0097] S104, cleaning the glass substrate with isopropyl alcohol, detergent, deionized water, and isopropyl alcohol in sequence, and drying in an oven;

[0098] S105, before using the glass substrate, clean the glass substrate with a plasma surface cleaner for 5 minutes;

[0099] S106. At 180° C., SiO 2 is deposited as a buffer layer using plasma enhanced chemical vapor deposition.

[0100] S200 , preparing a transistor layer on the pre-treated transparent substrate; the transistor layer includes a first transistor and a second transistor.

[0101] Specifically, a first semiconductor layer, a first source electrode, a first drain electrode, a second semiconductor layer, a second source electrode and a second drain electrode, a first gate electrode, a second gate electrode, a first dielectric layer and a second dielectric layer are prepared layer by layer on a transparent substrate, and through holes are made at corresponding positions of the first gate electrode and the second source electrode, respectively.

[0102] S300 , preparing a bottom electrode on the transistor layer.

[0103] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, and the material of the bottom electrode is indium tin oxide (ITO), and 130 nm of ITO is deposited as the bottom electrode by magnetron sputtering.

[0104] S400, preparing a light-emitting layer on the bottom electrode.

[0105] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, wherein the luminescent layer includes a hole transport layer, a luminescent layer, and an electron transport layer, wherein the material of the hole transport layer is poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid) (PEDOT:PSS), the material of the luminescent layer is a perovskite material, and the material of the electron transport layer is 1,3,5-tris(1-phenyl-1H-benzimidazol-2-yl)benzene (TPBi); preparing the luminescent layer includes:

[0106] S401, spin-coating PEDOT:PSS on the bottom electrode and annealing at 100° C. for 15 minutes in a nitrogen-protected glove box; wherein the spin-coating condition is 2000 rpm for 30 seconds;

[0107] S402, spin coating Perov skite on the PEDOT:PSS layer and annealing at 150° C. for 30 minutes; wherein the spin coating condition is 6000 rpm for 30 seconds;

[0108] S403 , depositing 35 nm thick TPBi by thermal evaporation.

[0109] S500 , preparing a top electrode on the light-emitting layer.

[0110] In a specific embodiment, an integrated luminescence and detection device as shown in FIG6 is prepared, wherein the material of the top electrode is aluminum (Al); the preparation of the top electrode includes:

[0111] S501 , depositing 80 nm thick Al by thermal evaporation.

[0112] Optionally, a transistor layer is prepared on the pretreated transparent substrate, where the transistor layer includes a first transistor and a second transistor, specifically comprising:

[0113] S210, preparing a semiconductor layer on the pretreated transparent substrate, removing part of the semiconductor layer to obtain a first semiconductor layer and a second semiconductor layer;

[0114] S220, preparing a first source electrode and a first drain electrode on both sides of the first semiconductor layer, and preparing a second source electrode and a second drain electrode on both sides of the second semiconductor layer;

[0115] S230, covering the first semiconductor layer, the first source electrode, the first drain electrode, and between the first drain electrode and the second source electrode with a dielectric having a first preset height, and covering the second semiconductor layer, the second source electrode, and the second drain electrode with a dielectric having a second preset height;

[0116] S240, preparing a first gate at a first preset position on the dielectric of the first transistor, and preparing a second gate at a second preset position on the dielectric of the second transistor;

[0117] S250, filling the remaining vacant positions in the first transistor with a dielectric to prepare a first dielectric layer;

[0118] S260, filling the remaining vacant positions in the second transistor with a dielectric to prepare a second dielectric layer;

[0119] S270, providing a first through hole on the first gate that penetrates the dielectric between the first gate and the bottom electrode, so as to generate an electrical connection between the first gate and the bottom electrode;

[0120] S280 , providing a second through hole on the second source electrode that penetrates the dielectric between the second source electrode and the bottom electrode, so as to generate an electrical connection between the second source electrode and the bottom electrode.

[0121] Specifically, when the thickness of the dielectric on the upper and lower sides of the first gate and the second gate is the same, the dielectric of the same height can be covered on the first semiconductor layer, the first source, the first drain, the second semiconductor layer, the second source and the second drain at the same time, and the first gate and the second gate can be prepared at the same time, and the dielectric layer on the first gate and the second gate can be prepared at the same time.

[0122] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, wherein the materials of the first semiconductor layer and the second semiconductor layer are both indium gallium zinc oxide (IGZO); the materials of the first drain electrode, the first source electrode, the second drain electrode, and the second source electrode are all titanium (Ti); the materials of the first dielectric layer and the second dielectric layer are both SiO2; and the materials of the first gate electrode and the second gate electrode are both molybdenum (Mo). The transistor layer is prepared, specifically including:

[0123] S201, depositing a 40 nm thick IGZO layer on a glass substrate, and removing part of the IGZO layer to obtain a first IGZO and a second IGZO;

[0124] S202, depositing 60 nm thick Ti as a drain and a source on both sides of the first IGZO and the second IGZO by thermal evaporation, and annealing the structure at 350° C. for 1.5 hours;

[0125] S203, at 180° C., using plasma enhanced chemical vapor deposition to deposit SiO 2 of a preset thickness as a gate insulating layer to transmit a gate electric field;

[0126] S204, depositing 60 nm thick Mo at two preset positions on the gate insulating layer by thermal evaporation to obtain a first gate and a second gate;

[0127] S205, depositing SiO2 as an insulating layer by plasma enhanced chemical vapor deposition at 180° C. and performing planarization;

[0128] S206 , making through holes at corresponding positions of the first gate and the second source, respectively, wherein the first through hole penetrates the dielectric on the first gate, and the second through hole penetrates the dielectric on the second source.

[0129] Optionally, preparing a semiconductor layer on the pretreated transparent substrate, removing part of the semiconductor layer to obtain a first semiconductor layer and a second semiconductor layer, specifically includes:

[0130] 211. Preparing a semiconductor layer on a transparent substrate by a predetermined method; the predetermined method includes any one of spin coating, doctor blade coating, drop coating, spray coating, evaporation, sputtering or inkjet printing; sputtering includes magnetron sputtering;

[0131] 212. Removing a predetermined portion of the semiconductor layer by etching, wherein the etching comprises wet etching with hydrochloric acid;

[0132] 213. Or, patterning the semiconductor layer by photolithography;

[0133] 214. Obtain a first semiconductor layer and a second semiconductor layer.

[0134] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, and part of the semiconductor layer is removed to obtain a first semiconductor layer and a second semiconductor layer, specifically comprising: depositing a 40 nm thick IGZO on a glass substrate by magnetron sputtering, patterning by photolithography, and wet etching with hydrochloric acid to remove part of the layer; wherein the sputtering gas is oxygen and argon.

[0135] Optionally, when the bottom electrode or the top electrode is a transparent electrode, preparing the bottom electrode or preparing the top electrode specifically includes:

[0136] The bottom electrode or the top electrode is prepared by any method including spin coating, doctor blade coating, drop coating, spray coating, evaporation, inkjet printing or roll-to-roll printing.

[0137] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, wherein the bottom electrode is a transparent electrode made of ITO, and a 130 nm thick ITO is deposited by thermal evaporation.

[0138] Specifically, when the bottom electrode or the top electrode is a metal electrode, preparing the bottom electrode or preparing the top electrode specifically includes:

[0139] The bottom electrode or the top electrode is prepared by evaporation method.

[0140] In a specific embodiment, an integrated luminescence detection device as shown in FIG6 is prepared, wherein the top electrode is a metal electrode, the material of the top electrode is Al, and 80 nm of Al is deposited by thermal evaporation as the bottom electrode.

[0141] The implementation of the embodiments of the present application includes the following beneficial effects: the present embodiment provides an integrated luminescence detection device, which includes a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer and a top electrode in sequence; wherein the transistor layer includes a first transistor and a second transistor, the first transistor includes a first gate and a first through-hole, the first gate is connected to the bottom electrode through the first through-hole; the second transistor includes a second source and a second through-hole, the second source is connected to the bottom electrode through the second through-hole; wherein the first transistor is used to detect the photocurrent generated by the light-emitting layer; the second transistor is used to control the light-emitting state of the light-emitting layer; the first through-hole is used to provide an electrical connection between the first gate and the bottom electrode, so that the voltage of the first gate is connected to the bottom electrode. The voltage of the bottom electrode is the same; the second through hole is used to provide an electrical connection between the second source and the bottom electrode; the bottom electrode is used to transfer the voltage between the light-emitting layer and the transistor layer; the light-emitting layer is used to emit light, or absorb light, thereby generating a photocurrent; the top electrode is used to apply a voltage to the light-emitting layer; by applying different voltages to the first transistor or the second transistor, combined with the different voltages applied to the top electrode, the integrated light-emitting detection device is controlled to operate in a photodetection mode or an electroluminescence mode, wherein the photodetection mode includes a photocurrent detection mode and a photovoltage detection mode, the photocurrent mode is conducive to photodetection under weaker light intensities, and the photovoltage mode is conducive to photodetection under stronger light intensities. This embodiment also provides a method for preparing an integrated light-emitting detection device, wherein a transistor layer, a bottom electrode, a light-emitting layer and a top electrode are sequentially prepared on a transparent substrate, wherein the transistor layer includes a first transistor and a second transistor in the same layer, adopts a stacked structure, has a simple structure, is easy to prepare, and realizes a small-volume integrated light-emitting detection device.

[0142] The above is a specific description of the preferred implementation of the present application, but the invention of the present application is not limited to the described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without violating the spirit of the present application. These equivalent modifications or substitutions are all included in the scope defined by the claims of the present application.

Claims

1. A luminescence detection integrated device, characterized in that: The device comprises a transparent substrate, a transistor layer, a bottom electrode, a light-emitting layer and a top electrode in sequence; wherein the transistor layer comprises a first transistor and a second transistor, the first transistor comprises a first gate and a first through hole, the first gate is connected to the bottom electrode through the first through hole; the second transistor comprises a second source and a second through hole, the second source is connected to the bottom electrode through the second through hole; wherein, The transparent substrate is used to support the transistor layer, the bottom electrode, the light-emitting layer and the top electrode; The first transistor is used to detect the photovoltage generated by the light-emitting layer; The second transistor is used to control the light-emitting state of the light-emitting layer or detect the photocurrent; The first through hole is used to provide an electrical connection between the first gate and the bottom electrode, so that the voltage of the first gate is the same as the voltage of the bottom electrode; The second through hole is used to provide electrical connection between the second source electrode and the bottom electrode; The bottom electrode is used to transfer the voltage between the light emitting layer and the transistor layer; The light-emitting layer is used to emit light or absorb light to generate photocurrent; The top electrode is used to apply voltage to the light-emitting layer.

2. The integrated luminescence detection device according to claim 1, characterized in that: The first transistor also includes a first semiconductor layer, a first source, a first drain and a first dielectric layer; the first source and the first drain are respectively arranged on both sides of the first semiconductor layer; the first gate is spaced a first preset distance from the first semiconductor layer; and the first dielectric layer fills the vacant part of the first transistor.

3. The integrated luminescence detection device according to claim 1, characterized in that: The second transistor also includes a second semiconductor layer, a second drain, a second gate and a second dielectric layer; wherein the second source and the second drain are arranged on both sides of the second semiconductor layer; the second gate is spaced a second preset distance from the second semiconductor layer; and the second dielectric layer fills the vacant part of the second transistor.

4. The integrated luminescence detection device according to claim 2, characterized in that: The first transistor and the second transistor have the same thickness, and the first drain and the second source are spaced apart by the first dielectric layer.

5. The integrated luminescence detection device according to claim 1, characterized in that: The bottom electrode includes a transparent electrode or a metal electrode, the top electrode includes a transparent electrode or a metal electrode, and at least one of the bottom electrode and the top electrode allows light to pass through.

6. A screen based on an integrated luminescence detection device, characterized in that: It comprises a detection tube drain controller, a detection tube source controller, a drive tube gate controller, a drive tube drain controller and a plurality of integrated light-emitting detection devices as described in any one of claims 1 to 5; a plurality of the integrated light-emitting detection devices form an array, and the four ports of each of the integrated light-emitting detection devices are respectively connected to the detection tube drain controller, the detection tube source controller, the drive tube gate controller and the drive tube drain controller, wherein: The integrated luminescence and detection device is used to emit light or detect light intensity; The detection tube drain end controller and the detection tube source end controller are used to provide a working voltage for the first transistor; The driving tube gate controller and the driving tube drain controller are used to provide an operating voltage for the second transistor.

7. A method for preparing an integrated luminescence detection device, characterized in that: The integrated luminescence detection device as claimed in any one of claims 1 to 5 comprises: Pre-treating the transparent substrate; Preparing the transistor layer on the pre-treated transparent substrate; the transistor layer includes the first transistor and the second transistor; preparing the bottom electrode on the transistor layer; preparing the light-emitting layer on the bottom electrode; The top electrode is prepared on the light emitting layer.

8. The method for preparing the integrated luminescence detection device according to claim 7, characterized in that: The step of preparing the transistor layer on the pre-treated transparent substrate, wherein the transistor layer includes the first transistor and the second transistor, specifically includes: Preparing a semiconductor layer on the pretreated transparent substrate, removing a portion of the semiconductor layer, and obtaining the first semiconductor layer and the second semiconductor layer; The first source electrode and the first drain electrode are respectively prepared on both sides of the first semiconductor layer, and the second source electrode and the second drain electrode are respectively prepared on both sides of the second semiconductor layer; A dielectric having a first preset height is covered on the first semiconductor layer, the first source electrode, the first drain electrode, and between the first drain electrode and the second source electrode, and a dielectric having a second preset height is covered on the second semiconductor layer, the second source electrode, and the second drain electrode; preparing the first gate at a first preset position on the dielectric of the first transistor, and preparing the second gate at a second preset position on the dielectric of the second transistor; Filling the remaining vacant positions in the first transistor with the dielectric to prepare the first dielectric layer; Filling the remaining vacant positions in the second transistor with the dielectric to prepare the second dielectric layer; Disposing a first through hole on the first gate that penetrates the dielectric between the first gate and the bottom electrode so as to generate an electrical connection between the first gate and the bottom electrode; A second through hole penetrating the dielectric between the second source and the bottom electrode is provided on the second source to generate an electrical connection between the second source and the bottom electrode.

9. The method for preparing the integrated luminescence detection device according to claim 8, characterized in that: The step of preparing a semiconductor layer on the pretreated transparent substrate and removing a portion of the semiconductor layer to obtain a first semiconductor layer and a second semiconductor layer specifically includes: Preparing a semiconductor layer on the pretreated transparent substrate by a preset method; the preset method includes any one of spin coating, scraper coating, drop coating, spray coating, evaporation, sputtering or inkjet printing; the sputtering includes magnetron sputtering; Removing a predetermined portion of the semiconductor layer by etching, wherein the etching comprises wet etching with hydrochloric acid; or, patterning the semiconductor layer by photolithography; The first semiconductor layer and the second semiconductor layer are obtained.

10. The method for preparing the integrated luminescence detection device according to claim 7, characterized in that: When the bottom electrode or the top electrode is a transparent electrode, the preparing the bottom electrode or the preparing the top electrode specifically includes: The bottom electrode or the top electrode is prepared by any method including spin coating, doctor blade coating, drop coating, spray coating, evaporation, inkjet printing or roll-to-roll printing.

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