Method for manufacturing semiconductor device and multilayer body for provisional fixation

Abstract

Disclosed is a method for manufacturing a semiconductor device. The method for manufacturing a semiconductor device comprises: a step for preparing a multilayer body for provisional fixation, the multilayer body including, in order, a support member, a first thermosetting resin layer that contains a first thermosetting resin component, a light absorption layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer that contains a second thermosetting resin component; a step for provisionally fixing a semiconductor member to the support member with the first thermosetting resin layer, the light absorption layer, and the second thermosetting resin layer therebetween; a step for processing the semiconductor member provisionally fixed to the support member; and a step for separating the semiconductor member from the support member by irradiating, from the support member side and with light which contains ultraviolet rays, the light absorption layer of the multilayer body for provisional fixation.

Description

Semiconductor device manufacturing method and temporary fixing laminate

[0001] The present disclosure relates to a method for manufacturing a semiconductor device and a temporary fixing laminate.

[0002] In the manufacture of semiconductor devices, after an integrated circuit is incorporated into a semiconductor substrate such as a semiconductor wafer or semiconductor chip, the semiconductor member having the semiconductor substrate may be processed. The semiconductor member is subjected to processing such as backside grinding and dicing to separate the semiconductor member. The semiconductor member is typically processed while temporarily fixed to a support member, and then the semiconductor member is separated from the support member. For example, Patent Document 1 discloses a method in which a semiconductor member is temporarily fixed on a support member via a temporary fixing material layer containing a predetermined component, and after processing the semiconductor member, ultraviolet light (ultraviolet laser light) is irradiated onto the temporary fixing material layer from the support member side to separate the processed semiconductor member from the support member.

[0003] JP 2013-033814 A

[0004] In a conventional method for separating a semiconductor member from a support member, when the temporary fixing material layer is irradiated with ultraviolet light (ultraviolet laser light) from the support member side, local heat generated in the temporary fixing material layer affects the support member, and the support member may be damaged, for example, by leaving irradiation marks on the surface of the support member. Damage to the support member is disadvantageous in terms of reuse.

[0005] Therefore, the main object of the present disclosure is to provide a method for manufacturing a semiconductor device that includes a step of processing a semiconductor member temporarily fixed to a support member, and that is capable of suppressing damage to the support member.

[0006] The present inventors conducted studies to solve the above-mentioned problems and found that damage to the support member can be suppressed by providing a layer containing a cured product of a thermosetting resin component between the support member and a layer (light absorbing layer) that absorbs light and generates heat and may be contained in the temporary fixing material layer, and thus completed the invention of the present disclosure.

[0007] The present disclosure provides a method for manufacturing a semiconductor device according to [1] to [3], and a temporary fixing laminate according to [4] to [6]. [1] A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate having, in this order, a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorbing layer that absorbs ultraviolet light to generate heat, and a second thermosetting resin layer containing a second thermosetting resin component; temporarily fixing a semiconductor member to the support member via the first thermosetting resin layer, the light absorbing layer, and the second thermosetting resin layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light absorbing layer of the temporary fixing laminate from the support member side with light including ultraviolet light to separate the semiconductor member from the support member. [2] The method for manufacturing a semiconductor device according to [1], wherein the light absorbing layer contains a polyamideimide resin. [3] The method for manufacturing a semiconductor device according to [1] or [2], wherein the first thermosetting resin component and the second thermosetting resin component comprise a thermoplastic resin and a thermosetting resin. [4] A temporary fixing laminate having, in this order: a support member, a first thermosetting resin layer comprising a first thermosetting resin component, a light absorbing layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer comprising a second thermosetting resin component. [5] The temporary fixing laminate according to [4], wherein the light absorbing layer comprises a polyamideimide resin. [6] The temporary fixing laminate according to [4] or [5], wherein the first thermosetting resin component and the second thermosetting resin component comprise a thermoplastic resin and a thermosetting resin.

[0008] According to the present disclosure, a method for manufacturing a semiconductor device, which includes a step of processing a semiconductor member temporarily fixed to a support member, is provided, which can suppress damage to the support member. Furthermore, some embodiments of the method for manufacturing a semiconductor device tend to be excellent in terms of removing peeling residue after separating the semiconductor member from the support member. Furthermore, according to the present disclosure, a temporary fixing laminate for use in such a method for manufacturing a semiconductor device is provided.

[0009] Fig. 1 is a schematic cross-sectional view showing one embodiment of a temporary fixing laminate. Fig. 2(a) and Fig. 2(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Fig. 3(a), Fig. 3(b), and Fig. 3(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. Fig. 4(a) and Fig. 4(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device.

[0010] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the present disclosure is not limited to the following embodiments. In the following embodiments, components (including steps, etc.) are not essential unless specifically stated. The sizes of the components in each figure are conceptual, and the relative size relationships between the components are not limited to those shown in each figure.

[0011] The same applies to the numerical values ​​and ranges in the present disclosure, and do not limit the present disclosure. In this specification, a numerical range indicated using "to" indicates a range that includes the numerical values ​​before and after "to" as the minimum and maximum values, respectively. In the numerical ranges described in stages in this specification, the upper or lower limit value described in one numerical range may be replaced with the upper or lower limit value of another numerical range described in stages. Furthermore, in the numerical ranges described in this specification, the upper or lower limit value of that numerical range may be replaced with the value shown in the Examples (Production Examples).

[0012] In this specification, the term "layer" includes not only a structure with a shape formed over the entire surface when observed in a plan view, but also a structure with a shape formed on a portion of the surface. Furthermore, in this specification, the term "process" includes not only an independent process, but also a process that cannot be clearly distinguished from other processes as long as the intended effect of the process is achieved.

[0013] In this specification, (meth)acrylate means acrylate or its corresponding methacrylate, and the same applies to other similar expressions such as (meth)acryloyl group, (meth)acrylic copolymer, etc.

[0014] In this specification, unless otherwise specified, the materials exemplified below may be used alone or in combination of two or more within the range that meets the conditions. When multiple substances corresponding to each component are present, the content of each component means the total amount of the multiple substances unless otherwise specified.

[0015] [Temporary Fixing Laminate and Manufacturing Method Thereof] The temporary fixing laminate of this embodiment is used to temporarily fix a semiconductor member and a support member. FIG. 1 is a schematic cross-sectional view showing one embodiment of the temporary fixing laminate. The temporary fixing laminate 10 shown in FIG. 1 includes, in this order, a support member 2, a first thermosetting resin layer 4 containing a first thermosetting resin component, a light absorbing layer (light absorbing layer 6) that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer 8 containing a second thermosetting resin component. The second thermosetting resin layer 8 has a surface S on the side of the second thermosetting resin layer 8 where the semiconductor member is disposed (the side opposite to the light absorbing layer 6). By including the first thermosetting resin layer 4 in the temporary fixing laminate 10, the impact of localized heat generation in the light absorbing layer 6 on the support member 2 can be reduced, making it possible to suppress damage to the support member 2.

[0016] The support member 2 is a plate-like body that has high transmittance and can withstand the load applied during processing of the semiconductor member. Examples of the support member 2 include an inorganic glass substrate and a transparent resin substrate.

[0017] The thickness of the support member 2 may be, for example, 0.1 to 2.0 mm. If the thickness of the support member 2 is 0.1 mm or more, handling tends to be easier. If the thickness of the support member 2 is 2.0 mm or less, material costs tend to be reduced.

[0018] The first thermosetting resin layer 4 includes a first thermosetting resin component. The first thermosetting resin component may include, for example, a thermoplastic resin and a thermosetting resin. In this case, the thermoplastic resin may include a hydrocarbon resin. When the first thermosetting resin component includes a thermoplastic resin and a thermosetting resin, heat resistance tends to be improved more than when a thermoplastic resin is used alone, and peeling residue tends to be more sufficiently reduced than when a thermosetting resin is used alone.

[0019] The thermoplastic resin is a resin that has thermoplastic properties, or at least has thermoplastic properties in an uncured state and forms a crosslinked structure after heating. Examples of the thermoplastic resin include hydrocarbon resins, polycarbonates, polyphenylene sulfides, polyethersulfones, polyetherimides, polyimides, petroleum resins, and novolac resins. The thermoplastic resin may contain a hydrocarbon resin or may be a hydrocarbon resin.

[0020] Hydrocarbon resins are resins whose main skeleton is composed of hydrocarbons. Examples of such hydrocarbon resins include ethylene-propylene copolymers, ethylene-1-butene copolymers, ethylene-propylene-1-butene copolymer elastomers, ethylene-1-hexene copolymers, ethylene-1-octene copolymers, ethylene-styrene copolymers, ethylene-norbornene copolymers, propylene-1-butene copolymers, ethylene-propylene-non-conjugated diene copolymers, ethylene-1-butene-non-conjugated diene copolymers, ethylene-propylene-1-butene-non-conjugated diene copolymers, polyisoprene, polybutadiene, styrene-butadiene-styrene block copolymers (SBS), styrene-isoprene-styrene block copolymers (SIS), styrene-ethylene-butylene-styrene block copolymers (SEBS), and styrene-ethylene-propylene-styrene block copolymers (SEPS). These hydrocarbon resins may be hydrogenated. Furthermore, these hydrocarbon resins may be carboxy-modified with maleic anhydride or the like. Among these, the hydrocarbon resin may contain a hydrocarbon resin having a monomer unit derived from styrene (i.e., a styrene-based resin), or may be a styrene-based resin. More specifically, the hydrocarbon resin may contain a styrene-ethylene-butylene-styrene block copolymer (SEBS), or may be a styrene-ethylene-butylene-styrene block copolymer (SEBS).

[0021] The content of the hydrocarbon resin (or styrene-based resin) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more, based on the total amount of the thermoplastic resin. The content of the hydrocarbon resin (or styrene-based resin) may be 100% by mass or less, based on the total amount of the thermoplastic resin. When the content of the hydrocarbon resin (or styrene-based resin) is within this range, it tends to be easier to adjust the storage modulus of the first thermosetting resin film to a desired range. The thermoplastic resin may be composed of a hydrocarbon resin (or a styrene-based resin).

[0022] The content of the styrene-based resin (or SEBS) may be 50% by mass or more, 70% by mass or more, or 90% by mass or more, based on the total amount of the hydrocarbon resin. The content of the styrene-based resin (or SEBS) may be 100% by mass or less, based on the total amount of the hydrocarbon resin. When the content of the styrene-based resin (or SEBS) is within this range, it tends to be easier to adjust the storage modulus of the first thermosetting resin film to a desired range. The hydrocarbon resin may be composed of a styrene-based resin (or SEBS).

[0023] When the hydrocarbon resin includes a styrene-based resin, the content of the monomer units derived from styrene may be 10 to 22.5% by mass, based on the total amount of the hydrocarbon resin (or thermoplastic resin). When the content of the monomer units derived from styrene is within this range, it tends to be easier to adjust the storage modulus of the first thermosetting resin film to a desired range. When two or more styrene-based resins are used in combination, the content of the monomer units derived from styrene refers to the total content of the monomer units derived from styrene in the two or more styrene-based resins. The content of the monomer units derived from styrene may be 11% by mass or more, 12% by mass or more, or 13% by mass or more, based on the total amount of the hydrocarbon resin (or thermoplastic resin), and may be 22% by mass or less, or 21.5% by mass or less.

[0024] When the first thermosetting resin component contains a styrene-based resin as the thermoplastic resin (hydrocarbon resin), the content of the styrene-derived monomer units may be 7 to 16% by mass, based on the total amount of the first thermosetting resin component. When the content of the styrene-derived monomer units is within this range, it tends to be easier to adjust the storage modulus of the first thermosetting resin film to a desired range. When two or more styrene-based resins are used in combination, the content of the styrene-derived monomer units refers to the total content of the styrene-derived monomer units in the two or more styrene-based resins. The content of the styrene-derived monomer units may be 7.5% by mass or more, 8% by mass or more, or 9% by mass or more, based on the total amount of the first thermosetting resin component, and may be 15.5% by mass or less, or 15% by mass or less.

[0025] The Tg of the thermoplastic resin may be −100 to 500° C., −50 to 300° C., or −50 to 50° C. If the Tg of the thermoplastic resin is 500° C. or less, when a film-like temporary fixing material is formed, flexibility tends to be easily ensured and low-temperature application tends to be improved. If the Tg of the thermoplastic resin is −100° C. or more, when a film-like temporary fixing material is formed, deterioration in handleability and releasability due to excessive flexibility tends to be suppressed.

[0026] The Tg of a thermoplastic resin is the midpoint glass transition temperature obtained by differential scanning calorimetry (DSC). Specifically, the Tg of a thermoplastic resin is the midpoint glass transition temperature calculated by a method in accordance with JIS K7121:2012, where the change in calorific value is measured at a temperature rise rate of 10°C / min and a measurement temperature of -80 to 80°C.

[0027] The weight-average molecular weight (Mw) of the thermoplastic resin may be 10,000 to 5,000,000 or 100,000 to 2,000,000. A weight-average molecular weight of 10,000 or more tends to ensure the heat resistance of the thermosetting resin layer formed. A weight-average molecular weight of 5,000,000 or less tends to prevent a decrease in flow and adhesion when the first thermosetting resin film is formed. The weight-average molecular weight is a polystyrene-equivalent value obtained by gel permeation chromatography (GPC) using a calibration curve based on standard polystyrene.

[0028] The content of the thermoplastic resin may be 40 to 90% by mass based on the total amount of the first thermosetting resin component. The content of the thermoplastic resin may be 50% by mass or more or 60% by mass or more, and 85% by mass or less or 80% by mass or less, based on the total amount of the first thermosetting resin component. When the content of the thermoplastic resin is in this range, the thin film formability and flatness of the thermosetting resin layer tend to be better.

[0029] A thermosetting resin is a resin that exhibits curability when heated, and is a concept that does not include the above-mentioned thermoplastic resins (hydrocarbon resins). Examples of thermosetting resins include epoxy resins, acrylic resins, silicone resins, phenolic resins, thermosetting polyimide resins, polyurethane resins, melamine resins, and urea resins. Among these, the thermosetting resin may be an epoxy resin because it has excellent heat resistance, workability, and reliability.

[0030] The epoxy resin is not particularly limited as long as it has heat resistance upon curing. Examples of epoxy resins include bifunctional epoxy resins such as bisphenol A epoxy, novolac epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins, and alicyclic epoxy resins such as dicyclopentadiene epoxy resins. The epoxy resin may also be, for example, a multifunctional epoxy resin, a glycidylamine epoxy resin, or a heterocycle-containing epoxy resin. Among these, the epoxy resin may contain an alicyclic epoxy resin from the viewpoint of heat resistance and weather resistance.

[0031] When an epoxy resin is used as the thermosetting resin, the thermosetting resin may be a combination of an epoxy resin and an epoxy resin curing agent. A commonly used known curing agent can be used as the epoxy resin curing agent. Examples of epoxy resin curing agents include amines, polyamides, acid anhydrides, polysulfides, boron trifluoride, bisphenols (such as bisphenol A, bisphenol F, and bisphenol S), and phenolic resins (such as phenol novolac resins, bisphenol A novolac resins, cresol novolac resins, and phenol aralkyl resins).

[0032] The content of the thermosetting resin may be 10 to 60% by mass based on the total amount of the first thermosetting resin component. The content of the thermosetting resin may be 15% by mass or more or 20% by mass or more, and 50% by mass or less or 40% by mass or less, based on the total amount of the first thermosetting resin component. When the content of the thermosetting resin is in this range, the thin film formability and flatness of the thermosetting resin layer tend to be better.

[0033] The first thermosetting resin component may further contain a curing accelerator that accelerates the curing reaction of the thermosetting resin, such as an epoxy resin. Examples of the curing accelerator include imidazole derivatives, dicyandiamide derivatives, dicarboxylic acid dihydrazide, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, 2-ethyl-4-methylimidazole-tetraphenylborate, and 1,8-diazabicyclo[5,4,0]undecene-7-tetraphenylborate.

[0034] The content of the curing accelerator may be 0.01 to 5 parts by mass per 100 parts by mass of the total amount of the thermosetting resin. When the content of the curing accelerator is within this range, the curability of the first thermosetting resin component and the heat resistance after curing tend to be better.

[0035] The first thermosetting resin component may further contain a polymerizable monomer and a polymerization initiator. The polymerizable monomer is not particularly limited as long as it polymerizes upon heating or irradiation with ultraviolet light or the like. From the viewpoint of material selectivity and ease of availability, the polymerizable monomer may be, for example, a compound having a polymerizable functional group such as an ethylenically unsaturated group. Examples of polymerizable monomers include (meth)acrylate, vinylidene halide, vinyl ether, vinyl ester, vinyl pyridine, vinyl amide, and arylated vinyl. Among these, the polymerizable monomer may be a (meth)acrylate. The (meth)acrylate may be monofunctional (monofunctional), bifunctional, or trifunctional or higher functional, but may also be a bifunctional or higher functional (meth)acrylate from the viewpoint of obtaining sufficient curability.

[0036] The content of the polymerizable monomer may be 0.1 to 20 mass % based on the total amount of the first thermosetting resin component.

[0037] The polymerization initiator is not particularly limited as long as it initiates polymerization by heating or irradiation with ultraviolet light, etc. For example, when a compound having an ethylenically unsaturated group is used as the polymerizable monomer, the polymerization initiator may be a thermal radical polymerization initiator or a photoradical polymerization initiator.

[0038] The content of the polymerization initiator may be 0.01 to 5 parts by mass relative to 100 parts by mass of the total amount of the polymerizable monomers.

[0039] The first thermosetting resin component may be a main component of the first thermosetting resin layer (first thermosetting resin film). The content of the first thermosetting resin component may be 70% by mass or more, 80% by mass or more, 90% by mass or more, 95% by mass or more, or 98% by mass or more, based on the total amount of the first thermosetting resin layer (first thermosetting resin film).

[0040] The first thermosetting resin layer (first thermosetting resin film) may contain, in addition to the first thermosetting resin component, other components such as an insulating filler, a sensitizer, and an antioxidant.

[0041] The insulating filler may be added to the thermosetting resin layer for the purpose of imparting low thermal expansion, low moisture absorption, etc. Examples of the insulating filler include non-metallic inorganic fillers such as silica, alumina, boron nitride, titania, glass, and ceramic. From the viewpoint of dispersibility in a solvent, the insulating filler may be particles whose surfaces have been treated with a surface treatment agent. The surface treatment agent may be, for example, a silane coupling agent.

[0042] The content of the insulating filler may be 0.1 to 20 parts by mass per 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the insulating filler is within this range, heat resistance tends to be further improved without impeding light transmission. Furthermore, when the content of the insulating filler is within this range, it may also contribute to easy releasability.

[0043] Examples of the sensitizer include anthracene, phenanthrene, chrysene, benzopyrene, fluoranthene, rubrene, pyrene, xanthone, indanthrene, thioxanthen-9-one, 2-isopropyl-9H-thioxanthen-9-one, 4-isopropyl-9H-thioxanthen-9-one, and 1-chloro-4-propoxythioxanthone.

[0044] The content of the sensitizer may be 0.01 to 10 parts by mass relative to 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the sensitizer is within this range, there tends to be little effect on the properties and thin film properties of the first thermosetting resin component.

[0045] Examples of antioxidants include quinone derivatives such as benzoquinone and hydroquinone, phenol derivatives (hindered phenol derivatives) such as 4-methoxyphenol and 4-t-butylcatechol, aminoxyl derivatives such as 2,2,6,6-tetramethylpiperidine-1-oxyl and 4-hydroxy-2,2,6,6-tetramethylpiperidine-1-oxyl, and hindered amine derivatives such as tetramethylpiperidyl methacrylate.

[0046] The content of the antioxidant may be 0.1 to 10 parts by mass relative to 100 parts by mass of the total amount of the first thermosetting resin component. When the content of the antioxidant is within this range, decomposition of the thermosetting resin component tends to be suppressed, and contamination tends to be prevented.

[0047] From the viewpoint of stress relaxation, the thickness of the first thermosetting resin layer 4 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0048] The light absorbing layer (light absorbing layer 6) that absorbs ultraviolet light and generates heat may be, for example, a resin layer containing a resin that absorbs ultraviolet light and generates heat. Examples of resins that absorb ultraviolet light and generate heat include polyamideimide resins, polyimide resins, polyether ether ketone resins, polyethylene naphthalate resins, bismaleimide resins, and polyketone resins. Among these, the resin that absorbs ultraviolet light and generates heat may be a polyamideimide (PAI) resin or a polyimide (PI) resin, or may be a polyamideimide resin, since it can efficiently separate the semiconductor member and the support member when irradiated with light containing ultraviolet light. That is, the resin layer (light absorbing layer) may contain a polyamideimide resin or a polyimide resin, or may contain a polyamideimide resin. The content of the resin that absorbs ultraviolet light and generates heat may be 50% by mass or more, 60% by mass or more, or 70% by mass or more, and 100% by mass or less, based on the total amount of the resin layer (light absorbing layer).

[0049] The resin layer (light absorbing layer) may contain other resins and other additives other than the resin that absorbs ultraviolet light and generates heat, as long as the effects of the present disclosure are not impaired. Examples of other resins include thermosetting resins. Examples of thermosetting resins include the thermosetting resins exemplified as the first thermosetting resin component. Examples of other additives include curing accelerators, dyes, sensitizers, etc. The total content of the other resins and other additives may be 50% by mass or less, 40% by mass or less, or 30% by mass or less, based on the total amount of the resin layer (light absorbing layer).

[0050] As the resin film for the light absorbing layer, a commercially available resin film may be used as it is, or a resin film formed using a resin solution may be used.

[0051] Commercially available polyamide-imide resins include, for example, HPC-5020 and HPC-9000 (Resonac Corporation).

[0052] From the viewpoint of good peelability, the thickness of the light absorbing layer 6 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 100 μm or less, 50 μm or less, or 30 μm or less.

[0053] The second thermosetting resin layer 8 contains a second thermosetting resin component. The components contained in the second thermosetting resin component, their preferred aspects, etc. are the same as the components contained in the first thermosetting resin component, their preferred aspects, etc. Therefore, redundant explanations will be omitted here. The second thermosetting resin component may be composed of the same components as the first thermosetting resin component, or may be composed of components different from the first thermosetting resin component.

[0054] From the viewpoint of stress relaxation, the thickness of the second thermosetting resin layer 8 may be, for example, 0.1 μm or more, 1 μm or more, or 5 μm or more, and may be 200 μm or less, 100 μm or less, or 70 μm or less.

[0055] 1 is not particularly limited, and can be obtained, for example, by a method including the steps of providing a first thermosetting resin layer 4 on a support member 2, providing a light absorbing layer 6 on the first thermosetting resin layer 4, and providing a second thermosetting resin layer 8 on the light absorbing layer 6. The temporary fixing laminate 10 can also be obtained, for example, by a method including the steps of preparing a three-layer film having a first thermosetting resin layer 4 (first thermosetting resin film), a light absorbing layer 6 (resin film for light absorbing layer), and a second thermosetting resin layer 8 (second thermosetting resin film), and attaching the three-layer film to the support member 2 in an orientation in which the first thermosetting resin layer 4 of the three-layer film is in contact with the support member 2.

[0056] The process of providing the first thermosetting resin layer 4 on the support member 2 may include, for example, a process of preparing a first varnish containing a first thermosetting resin component, a process of applying the first varnish to a support film and evaporating the solvent from the applied first varnish to produce a first thermosetting resin film, and a process of attaching the first thermosetting resin film to form the first thermosetting resin layer 4.

[0057] The first varnish can be prepared, for example, by stirring, mixing, kneading, or the like, the first thermosetting resin component and the like in a solvent.

[0058] The solvent used in preparing the first varnish is not particularly limited as long as it has the property of being able to uniformly dissolve or disperse each component. Examples of such solvents include aromatic hydrocarbons such as toluene, xylene, mesitylene, cumene, and p-cymene; aliphatic hydrocarbons such as hexane and heptane; cyclic alkanes such as methylcyclohexane; cyclic ethers such as tetrahydrofuran and 1,4-dioxane; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and 4-hydroxy-4-methyl-2-pentanone; esters such as methyl acetate, ethyl acetate, butyl acetate, methyl lactate, ethyl lactate, and γ-butyrolactone; carbonates such as ethylene carbonate and propylene carbonate; and amides such as N,N-dimethylformamide, N,N-dimethylacetamide, and N-methyl-2-pyrrolidone. Among these, the solvent may be toluene, xylene, heptane, or cyclohexanone from the viewpoints of solubility and boiling point. The solid component concentration in the first varnish may be 10 to 80% by mass based on the total mass of the first varnish.

[0059] The stirring, mixing or kneading during preparation of the first varnish can be carried out using, for example, a stirrer, a kneading machine, a three-roll mill, a ball mill, a bead mill, a homodisper, or the like.

[0060] Examples of the support film include polyesters such as polyethylene terephthalate (PET), polybutylene terephthalate, and polyethylene naphthalate; polyolefins such as polyethylene and polypropylene; polycarbonate, polyamide, polyimide, polyamideimide, polyetherimide, polyethersulfide, polyethersulfone, polyetherketone, polyphenylene ether, polyphenylene sulfide, poly(meth)acrylate, polysulfone, and liquid crystal polymer films. The thickness of the support film may be, for example, 1 to 250 μm.

[0061] The first varnish can be applied to the support film using a knife coater, a roll coater, an applicator, a comma coater, a die coater, or the like.

[0062] The heating conditions for volatilizing the solvent from the applied first varnish can be appropriately set depending on the solvent used, etc. The heating conditions may be, for example, 40 to 150°C and 0.1 to 30 minutes.

[0063] Examples of methods for attaching the first thermosetting resin film onto the support member 2 include roll lamination, vacuum lamination, and hot pressing. Lamination can be performed under temperature conditions of, for example, 0 to 120°C.

[0064] The first thermosetting resin layer 4 can also be formed, for example, by a method including a step of applying a first varnish containing a first thermosetting resin component onto the support member 2 and volatilizing the solvent from the applied first varnish.

[0065] The step of providing the light absorbing layer 6 on the first thermosetting resin layer 4 may include, for example, a step of attaching a resin film for the light absorbing layer onto the first thermosetting resin layer 4 to form the light absorbing layer 6.

[0066] Examples of a method for attaching the resin film for the light absorbing layer onto the first thermosetting resin layer 4 include roll lamination, vacuum lamination, and hot pressing. Lamination can be performed, for example, under temperature conditions of 0 to 120°C.

[0067] The step of providing the second thermosetting resin layer 8 on the light absorbing layer 6 may include, for example, a step of preparing a second varnish containing a second thermosetting resin component, a step of applying the second varnish to a support film and volatilizing the solvent from the applied second varnish to produce a second thermosetting resin film, and a step of attaching the second thermosetting resin film to form the second thermosetting resin layer 8. The second thermosetting resin layer 8 can also be formed by a method including, for example, a step of applying a second varnish containing a second thermosetting resin component to the light absorbing layer 6 and volatilizing the solvent from the applied second varnish.

[0068] The method for forming the second thermosetting resin layer 8 (preparation of the second varnish, etc.) is the same as the method for forming the first thermosetting resin layer 4 (preparation of the first varnish, etc.), so duplicated explanations will be omitted here.

[0069] A three-layer film having a first thermosetting resin layer 4, a light absorbing layer 6, and a second thermosetting resin layer 8 can be obtained, for example, by a method including a step of bonding a first thermosetting resin film and a resin film for a light absorbing layer to produce a two-layer film, and a step of bonding the resin film for a light absorbing layer in the two-layer film to the second thermosetting resin film.

[0070] In the method using a three-layer film, examples of the method of bonding a first thermosetting resin film and a resin film for a light absorbing layer, the method of bonding a resin film for a light absorbing layer and a second thermosetting resin film in a two-layer film, and the method of bonding a three-layer film onto the support member 2 include roll lamination, vacuum lamination, and hot pressing. Lamination can be performed, for example, under temperature conditions of 30 to 120°C.

[0071] [Method for manufacturing semiconductor device] The method for manufacturing a semiconductor device of this embodiment includes a step of preparing the temporary fixing laminate (preparation step), a step of temporarily fixing a semiconductor member to a support member via a first thermosetting resin layer, a light absorbing layer, and a second thermosetting resin layer (temporary fixing step), a step of processing the semiconductor member temporarily fixed to the support member (processing step), and a step of irradiating the light absorbing layer of the temporary fixing laminate from the support member side with light including ultraviolet light to separate the semiconductor member from the support member (separation step).

[0072] (Preparation Step) In the preparation step, a temporary fixing laminate 10 is prepared for temporarily fixing a semiconductor member to a support member while the semiconductor member is being processed in order to manufacture a semiconductor device.

[0073] 2(a) and 2(b) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. In the temporary fixing step, the semiconductor member 40 is temporarily fixed to the support member 2 via the first thermosetting resin layer 4, the light absorbing layer 6, and the second thermosetting resin layer 8. The second thermosetting resin layer 8 has a surface S opposite to the light absorbing layer 6. The laminate 20 has a temporary fixing laminate 10 and a semiconductor member 40 arranged on the surface S of the second thermosetting resin layer 8 of the temporary fixing laminate 10. In the temporary fixing step, for example, the semiconductor member 40 can be temporarily fixed to the support member 2 by curing the first thermosetting resin layer 4 and the second thermosetting resin layer 8 in a state where the semiconductor member 40 is arranged on the second thermosetting resin layer 8 (see FIG. 2(a)) (see FIG. 2(b)). In other words, the semiconductor member 40 can be temporarily adhered to the support member 2 via the first cured material layer 4c containing a cured product of the first thermosetting resin component, the light absorbing layer 6, and the second cured material layer 8c containing a cured product of the second thermosetting resin component.

[0074] Examples of the semiconductor member 40 include a semiconductor substrate 42 and a rewiring layer 44. When the semiconductor member 40 includes a semiconductor substrate 42 and a rewiring layer 44, the semiconductor member 40 is temporarily fixed to the support member 2 via the first cured material layer 4c, the light-absorbing layer 6, and the second cured material layer 8c, with the rewiring layer 44 facing the second cured material layer 8c. The semiconductor member 40 may further include external connection terminals. The semiconductor substrate 42 may be a semiconductor wafer or a semiconductor chip obtained by dividing a semiconductor wafer. In the example of FIG. 2( a), multiple semiconductor members 40 are disposed on the surface S of the second cured material layer 8c, but the number of semiconductor members 40 may be one. The thickness of the semiconductor member 40 may be 1 to 1000 μm, 10 to 500 μm, or 20 to 200 μm, from the viewpoints of miniaturizing and thinning the semiconductor device and suppressing cracking during transportation, processing, etc.

[0075] The semiconductor member 40 disposed on the second thermosetting resin layer 8 is pressure-bonded to the second thermosetting resin layer 8 using, for example, a vacuum press or a vacuum laminator. When using a vacuum press, the pressure-bonding conditions may be an atmospheric pressure of 1 hPa or less, a pressure of 1 MPa, a pressure-bonding temperature of 120 to 200°C, and a holding time of 100 to 300 seconds. When using a vacuum laminator, the pressure-bonding conditions may be, for example, an atmospheric pressure of 1 hPa or less, a pressure-bonding temperature of 60 to 180°C or 80 to 150°C, a laminating pressure of 0.01 to 1.0 MPa or 0.1 to 0.7 MPa, and a holding time of 1 to 600 seconds or 30 to 300 seconds.

[0076] After the semiconductor member 40 is placed on the second thermosetting resin layer 8, the second thermosetting resin component in the second thermosetting resin layer 8 is thermally or photocured to form a second cured material layer 8c containing a cured product of the second thermosetting resin component. At this time, the first thermosetting resin component in the first thermosetting resin layer 4 is also thermally or photocured to form a first cured material layer 4c containing a cured product of the first thermosetting resin component. As a result, the semiconductor member 40 is temporarily fixed to the support member 2 via the first cured material layer 4c, the light absorbing layer 6, and the second cured material layer 8c, and a laminate 30 is formed that includes the cured temporary fixing laminate 10c and the semiconductor member 40 temporarily fixed on the surface S of the second cured material layer 8c of the cured temporary fixing laminate 10c. The heat curing conditions may be, for example, a temperature of 300° C. or less or 100 to 250° C., and a time of 1 to 180 minutes or 1 to 120 minutes.

[0077] 3(a), 3(b), and 3(c) are schematic cross-sectional views showing one embodiment of a method for manufacturing a semiconductor device. In the processing step, a semiconductor member 40 temporarily fixed to a support member 2 is processed. FIG. 3(a) shows an example of processing including thinning of a semiconductor substrate, and the processed semiconductor member 40a has a thinned semiconductor substrate 42a and a rewiring layer 44. The processing of the semiconductor member is not limited to this, and can include, for example, thinning of the semiconductor substrate, dividing (dicing) the semiconductor member, forming a through electrode (through-silicon electrode), etching, plating reflow processing, sputtering, or a combination thereof.

[0078] After processing the semiconductor member 40, an encapsulating layer 50 is formed to encapsulate the processed semiconductor member 40a, as shown in FIG. 3(b). The encapsulating layer 50 can be formed using an encapsulating material typically used in the manufacture of semiconductor devices. For example, the encapsulating layer 50 may be formed from a thermosetting resin composition. Examples of thermosetting resin compositions used in the encapsulating layer 50 include epoxy resins such as cresol novolac epoxy resin, phenol novolac epoxy resin, biphenyl diepoxy resin, and naphthol novolac epoxy resin. The encapsulating layer 50 and the thermosetting resin composition used to form the encapsulating layer 50 may contain additives such as fillers and flame retardants.

[0079] The sealing layer 50 is formed using, for example, a solid material, a liquid material, a granular material, or a sealing film. When a sealing film is used, a compression sealing molding machine, a vacuum laminating machine, or the like is used. For example, using these machines, the processed semiconductor member 40a is covered with a sealing film that has been heat-melted under conditions of 40 to 180°C (or 60 to 150°C), 0.1 to 10 MPa (or 0.5 to 8 MPa), and 0.5 to 10 minutes, thereby forming the sealing layer 50. The thickness of the sealing film is adjusted so that the sealing layer 50 is equal to or greater than the thickness of the processed semiconductor member 40a. The thickness of the sealing film may be 50 to 2000 μm, 70 to 1500 μm, or 100 to 1000 μm.

[0080] After forming the sealing layer 50, as shown in FIG. 3( c), the sealing layer 50, the second cured material layer 8 c, the light absorbing layer 6, and the first cured material layer 4 c may be divided into a plurality of parts, each of which includes one processed semiconductor member 40 a.

[0081] 4(a) and 4(b) are schematic cross-sectional views illustrating one embodiment of a method for manufacturing a semiconductor device. As shown in FIG. 4(a), light A is irradiated onto the light absorbing layer 6 from the support member 2 side to separate the processed semiconductor member 40a from the support member 2. Light A may be light containing ultraviolet light or light containing a wavelength of 200 to 400 nm (near-ultraviolet light). By irradiating light A, the light absorbing layer 6 absorbs the ultraviolet light of light A and generates heat, thereby causing, for example, interfacial peeling between the first cured product layer 4c and the light absorbing layer 6, making it possible to easily separate the processed semiconductor member 40a from the support member 2. In order to separate the processed semiconductor member 40a from the support member 2, slight stress may be applied to the processed semiconductor member 40a in addition to the irradiation with light A.

[0082] Examples of the light source for light A in the separation step include a low-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a laser, etc. Among these, the light source for light A may be a laser.

[0083] Examples of the laser include a solid-state laser such as a YAG laser, a liquid laser such as a dye laser, and a gas laser such as an excimer laser. Among these, the laser may be an excimer laser.

[0084] Examples of excimer lasers include ArF excimer lasers (oscillation wavelength: 193 nm), KrF excimer lasers (oscillation wavelength: 248 nm), XeCl excimer lasers (oscillation wavelength: 308 nm), and XeF excimer lasers (oscillation wavelength: 351 nm).

[0085] The laser irradiation conditions include the applied voltage, pulse width, irradiation time, irradiation distance (the distance between the light source and the light absorption layer), irradiation energy, etc., and these can be set arbitrarily depending on the number of irradiations, etc. From the viewpoint of reducing damage to the semiconductor member 40a after processing, the laser irradiation conditions may be set so that the semiconductor member 40a after processing can be separated in fewer irradiations.

[0086] A portion of the second cured material layer 8c may adhere as residue to the separated, processed semiconductor member 40a. The adhered residue is removed as shown in FIG. 4(b). The adhered residue may be removed, for example, by washing with a solvent or by peeling. Examples of solvents include, but are not limited to, ethanol, methanol, isopropyl alcohol, toluene, xylene, acetone, methyl ethyl ketone, methyl isobutyl ketone, and hexane. To remove the adhered residue, the processed semiconductor member 40a may be immersed in a solvent or subjected to ultrasonic cleaning. The processed semiconductor member 40a may also be heated at a low temperature of approximately 100°C or less.

[0087] By the above-described exemplary method, a semiconductor element 60 including the processed semiconductor member 40 a can be obtained. The obtained semiconductor element 60 can be connected to another semiconductor element or a semiconductor element mounting substrate to manufacture a semiconductor device.

[0088] The present disclosure will be described in more detail below with reference to examples (production examples), although the present disclosure is not limited to these examples (production examples).

[0089] [Preparation of Thermosetting Resin Films] (Preparation Examples 1-1, 1-2, and 1-3) The following components were used in preparing the thermosetting resin films.

[0090] (A) Thermoplastic resin (A-1) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (trade name: FG1924GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 13% by mass), used as a 25% by mass xylene solution (A-2) Maleic anhydride-modified styrene-ethylene-butylene-styrene block copolymer (trade name: FG1901GT, manufactured by Kraton Polymer Japan Co., Ltd., styrene content: 30% by mass), used as a 25% by mass xylene solution (B) Thermosetting resin (B-1) Dicyclopentadiene-type epoxy resin (trade name: HP7200H, manufactured by DIC Corporation), (B-1) component used as a 50% by mass cyclohexanone solution (C) Curing accelerator (C-1) Imidazole derivative (trade name: 2PZ-CN, manufactured by Shikoku Chemicals Corporation), used as a 10% by mass cyclohexanone solution (D) Antioxidant (D-1) Hindered phenol derivative (trade name: AO-60, manufactured by ADEKA Corporation), used as a 10% by mass solution in cyclohexanone

[0091] The materials shown in Table 1 were used in the parts by weight shown in Table 1 (the values ​​in Table 1 indicate the non-volatile content). This was mixed with 302.4 parts by weight of toluene and 4.5 parts by weight of cyclohexanone as solvents to obtain a varnish. The obtained varnish was applied to the release-treated surface of a support film (Purex A31B (trade name, light release type, polyethylene terephthalate (PET) film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) using a precision coater. The solvent was removed by heating the coating at 100°C for 10 minutes to obtain a 10 μm thick thermosetting resin film of Production Example 1-1, a 30 μm thick thermosetting resin film of Production Example 1-2, and a 50 μm thick thermosetting resin film of Production Example 1-3. A protective film (Purex A70J (trade name, heavy release type, PET film, Toyobo Film Solutions Co., Ltd., thickness: 38 μm)) was attached to the surface of the obtained thermosetting resin film opposite to the support film, with the release-treated surface in contact with the thermosetting resin film.

[0092]

[0093] [Preparation of Light-Absorbing Layer (Resin Film for Light-Absorbing Layer)] (Production Example 2-1) <Preparation of Polyamideimide (PAI) Resin Film> HPC-5012 (polyamideimide resin, 32% by mass NMP (N-methylpyrrolidone) solution, manufactured by Resonac Co., Ltd.) was weighed out so that the solids content was 5 parts by mass, and HP-7200H (dicyclopentadiene-type epoxy resin, 50% by mass cyclohexanone solution, manufactured by DIC Corporation) was weighed out so that the solids content was 2.5 parts by mass, and the mixture was stirred with a stirrer. Thereafter, 0.05 parts by mass of a curing accelerator (1-benzyl-2-methylimidazole, 1B-2MZ, manufactured by Shikoku Chemicals Corporation) was added, and the mixture was further stirred and degassed to obtain a varnish containing polyamideimide (PAI) resin. The prepared varnish was applied to a polyethylene terephthalate (PET) film (A3100-25, manufactured by Toyobo Film Solutions Co., Ltd.) using a knife coater to a thickness of 20 μm, and then dried in a dryer at 80° C. for 5 minutes and at 150° C. for 5 minutes to obtain a PAI resin film of Production Example 2-1 having a thickness of 20 μm.

[0094] <Preparation of Polyimide (PI) Resin Film> A Kapton film (Toray DuPont Co., Ltd., thickness 25 μm) was prepared as a PI resin film.

[0095] [Preparation and Evaluation of Test Laminate] (Example 1) <Preparation of Temporary Fixing Laminate> To form the first curable resin layer, the curable resin film of Production Example 1-1 was used as the first curable resin film. To form the light absorbing layer, the PAI resin film of Production Example 2-1 was used. To form the second curable resin layer, the curable resin film of Production Example 1-3 was used as the second curable resin film. First, the support films were peeled off from the first curable resin film and the PAI resin film, and the exposed surfaces were bonded together using a pressure roll laminator under conditions of a pressure of 0.2 MPa, a temperature of 100°C, and a speed of 0.2 m / min, thereby obtaining a two-layer film. Next, the protective film on the PAI resin film side of the two-layer film production example 2-1 and the support film of the second curable resin film were peeled off, and the exposed surfaces were bonded together using a pressure roll laminator under conditions of a pressure of 0.2 MPa, a temperature of 100 ° C., and a speed of 0.2 m / min to obtain a three-layer film. Next, the protective film on the first curable resin film side of the three-layer film was peeled off, and the three-layer film was laminated on a glass substrate (trade name: Eagle XG, manufactured by Corning Co., Ltd., size: 20 mm × 20 mm, thickness: 0.7 mm) as a support member using a vacuum pressure laminator, with the peeled surface facing the support member. The three-layer film was laminated under conditions of a pressure of 0.5 MPa, a temperature of 100 ° C., and a pressure time of 60 seconds, thereby producing a temporary fixing laminate of Example 1 comprising a support member, a first curable resin layer, a light-absorbing layer, and a second curable resin layer in this order.

[0096] <Preparation of Test Laminate> Next, the protective film on the temporary fixing laminate side of Example 1 was peeled off, and a silicon wafer (size: 20 mm × 20 mm, thickness: 150 μm) as a semiconductor member was laminated on the second curable resin layer using a vacuum pressure laminator under conditions of a pressure of 0.5 MPa, a temperature of 100°C, and a pressing time of 60 seconds. Thereafter, the first curable resin layer and the second curable resin layer were cured by heating at 200°C for 1 hour, and a test laminate of Example 1 having a semiconductor member temporarily fixed to the support member was prepared.

[0097] <Evaluation of Test Laminate> - Evaluation of Separability The test laminate of Example 1 was irradiated with ultraviolet laser light at a wavelength of 355 nm using a UV laser marker (PU-L3A manufactured by Laser Works Co., Ltd., beam diameter: 20 μm). Laser light irradiation was performed from the support member (glass substrate) side of the test laminate, and was performed under the irradiation conditions of frequency, scanning speed, irradiation energy, and irradiation energy density (calculated values) shown in Table 2. The separability was evaluated as "A" for excellent separability when the silicon wafer was separated from the glass substrate by applying an external force to the silicon wafer after laser light irradiation, and "B" for when the silicon wafer did not separate from the glass substrate even when an external force was applied. The results are shown in Table 2.

[0098] Evaluation of Residue Removability After the above evaluation of separability was performed, the removability of the residue attached to the support member (glass substrate) side (mainly the residue of the first cured material layer obtained by curing the first curable resin layer and the residue of the light absorbing layer) and the residue attached to the semiconductor member (silicon wafer) side (mainly the residue of the second cured material layer obtained by curing the second curable resin layer) was evaluated. The residue attached to the support member side was peeled off, and the residue was evaluated as "A" if it was extremely easy to remove, "B" if it was easy to remove, "C" if it was possible to remove, and "D" if it was insufficient to remove. The results are shown in Table 2. The residue attached to the semiconductor member side was peeled off, and the residue was evaluated as "A" if it was extremely easy to remove, "B" if it was easy to remove, "C" if it was possible to remove, and "D" if it was insufficient to remove. The results are shown in Table 2.

[0099] - Surface observation of support member (glass substrate) After the above evaluation of residue removability was performed, the surface of the support member (glass substrate) was observed, and the number of dents (UV laser irradiation marks) on the surface of the support member was confirmed. A metallurgical microscope was used to observe the surface of the support member (glass substrate). The evaluation was as follows: "A" indicates that no irradiation marks were observed in a measurement area of ​​1 cm x 1 cm; "B" indicates that there was one irradiation mark in a measurement area of ​​1 cm x 1 cm; and "C" indicates that there were two or more irradiation marks in a measurement area of ​​1 cm x 1 cm. The results are shown in Table 2.

[0100] Example 2 A temporary fixing laminate of Example 2 and a test laminate of Example 2 were produced in the same manner as in Example 1, except that the curable resin film of Production Example 1-2 was used as the first curable resin film. The produced test laminate of Example 2 was evaluated under the same conditions as in Example 1. The results are shown in Table 2.

[0101] Example 3 The same temporary fixing laminate and test laminate as those of Example 1 were used as the temporary fixing laminate and test laminate of Example 3. In the evaluation of separability, the test laminate of Example 3 was evaluated under the same conditions as those of Example 1, except that the irradiation conditions (frequency, scanning speed, irradiation energy, and irradiation energy density (calculated values)) were changed to those shown in Table 2. The results are shown in Table 2.

[0102] (Example 4) A temporary fixing laminate of Example 4 and a test laminate of Example 4 were produced in the same manner as in Example 1, except that the PAI resin film was changed to a PI resin film. The produced test laminate of Example 4 was evaluated under the same conditions as in Example 3. The results are shown in Table 2.

[0103] (Comparative Example 1) <Preparation of Temporary Fixing Laminate> To form the curable resin layer, the curable resin film of Production Example 1-3 was used as the curable resin film. First, on a glass substrate (product name: Eagle XG, manufactured by Corning Corporation, size: 20 mm x 20 mm, thickness: 0.7 mm) serving as a support member, HPC-5012 (polyamideimide resin, 32 mass% NMP (N-methylpyrrolidone) solution, manufactured by Resonac Co., Ltd.) was formed using a spin coater at 2000 rpm for 30 seconds. The solvent was removed by heating at 80°C for 10 minutes and 150°C for 10 minutes, thereby obtaining a glass substrate with a light-absorbing layer having a 10 μm-thick light-absorbing layer. Next, the support film was peeled from the curable resin film, and the exposed surface was attached to the light-absorbing layer side of the glass substrate with a light-absorbing layer using a vacuum pressure laminator under conditions of a pressure of 0.5 MPa, a temperature of 100°C, and a pressure time of 60 seconds. This produced a temporary fixing laminate of Comparative Example 1, which had a support member, a light absorbing layer, and a curable resin layer in this order. The temporary fixing laminate of Comparative Example 1 was a laminate obtained by removing the first curable resin layer from the temporary fixing laminate of Example 1.

[0104] <Preparation and Evaluation of Test Laminate> Next, the protective film on the curable resin layer side of the temporary fixing laminate of Comparative Example 1 was peeled off, and a silicon wafer (size: 20 mm x 20 mm, thickness: 150 μm) as a semiconductor member was laminated on the curable resin layer using a vacuum pressure laminator under conditions of a pressure of 0.5 MPa, a temperature of 100 ° C, and a pressure time of 60 seconds. Then, the curable resin layer was cured by heating at 270 ° C for 1 hour to prepare a test laminate of Comparative Example 1 having a semiconductor member temporarily fixed to the support member. In the evaluation of separability, the test laminate of Comparative Example 1 was evaluated under the same conditions as in Example 1, except that the irradiation conditions (frequency, scanning speed, irradiation energy, and irradiation energy density (calculated value)) were changed to the irradiation conditions shown in Table 2. The results are shown in Table 2.

[0105] (Comparative Example 2) A temporary fixing laminate of Comparative Example 2 and a test laminate of Comparative Example 2 were prepared in the same manner as in Comparative Example 1, except that HPC-5012 (polyamideimide resin, 32 mass % NMP (N-methylpyrrolidone) solution, manufactured by Resonac Corporation) was changed to PIX-1400 (polyimide resin, 16 mass % NMP (N-methylpyrrolidone) solution, manufactured by HD Microsystems Co., Ltd.). The prepared test laminate of Comparative Example 2 was evaluated under the same conditions as in Comparative Example 1. The results are shown in Table 2.

[0106]

[0107] As shown in Table 2, the temporary fixing laminates (test laminates) of Examples 1 to 4 were superior in the evaluation of the surface observation of the support member, despite the harsher irradiation conditions, compared to the temporary fixing laminates (test laminates) of Comparative Examples 1 and 2. These results confirmed that the manufacturing method of a semiconductor device according to the present disclosure is capable of suppressing damage to the support member in a manufacturing method of a semiconductor device that includes a step of processing a semiconductor member temporarily fixed to the support member.

[0108] 2...Support member, 4...First thermosetting resin layer, 4c...First cured material layer, 6...Light absorbing layer, 8...Second thermosetting resin layer, 8c...Second cured material layer, 10...Temporary fixing laminate, 10c...Temporary fixing laminate after curing, 20, 30...Laminates, 40...Semiconductor member, 40a...Semiconductor member after processing, 42...Semiconductor substrate, 42a...Semiconductor substrate after thinning, 44...Rewiring layer, 50...Sealing layer, 60...Semiconductor element.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of: preparing a temporary fixing laminate having, in this order, a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorbing layer that absorbs ultraviolet light to generate heat, and a second thermosetting resin layer containing a second thermosetting resin component; temporarily fixing a semiconductor member to the support member via the first thermosetting resin layer, the light absorbing layer, and the second thermosetting resin layer; processing the semiconductor member temporarily fixed to the support member; and irradiating the light absorbing layer of the temporary fixing laminate from the support member side with light including ultraviolet light to separate the semiconductor member from the support member.

2. The method for manufacturing a semiconductor device according to claim 1, wherein the light absorbing layer contains a polyamide-imide resin.

3. The method for manufacturing a semiconductor device according to claim 1 or 2, wherein the first thermosetting resin component and the second thermosetting resin component include a thermoplastic resin and a thermosetting resin.

4. A temporary fixing laminate having, in this order, a support member, a first thermosetting resin layer containing a first thermosetting resin component, a light absorbing layer that absorbs ultraviolet light and generates heat, and a second thermosetting resin layer containing a second thermosetting resin component.

5. The temporary fixing laminate according to claim 4, wherein the light absorbing layer contains a polyamideimide resin.

6. The temporary fixing laminate according to claim 4 or 5, wherein the first thermosetting resin component and the second thermosetting resin component contain a thermoplastic resin and a thermosetting resin.

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