Illumination device for growing plant

Abstract

This illumination device for growing a plant comprises: a phosphor substrate (20) including a phosphor layer (21); and a plurality of light-emitting elements (30) mounted on one surface of the phosphor substrate (20). The illumination device emits: light emitted by the light-emitting elements (30); and light emitted by the phosphor layer (21) in response to the light emitted by the light-emitting elements (30) as excitation light.

Description

Plant growth lighting equipment

[0001] The present invention relates to a lighting device for growing plants.

[0002] Currently, technology is being considered for cultivating plants using artificial light such as fluorescent lamps or LEDs instead of sunlight. Patent Document 1 describes a lighting system that controls the irradiation range, irradiation direction, and illuminance of white light and red light according to the size, shape, and growth stage of the plant.

[0003] Japanese Patent Application Laid-Open No. 2021-122262

[0004] When cultivating plants using artificial light, it is preferable to suppress variations in light intensity in the area where the plants are placed.

[0005] An example of an object of the present invention is to provide a lighting device for growing plants that can suppress variations in light intensity in an area where plants are placed.

[0006] According to the present invention, there are provided the following lighting devices for plant growth. [1] A lighting device for plant growth comprising: a phosphor substrate; and a plurality of light-emitting elements mounted on one side of the phosphor substrate. [2] The lighting device for plant growth according to [1], comprising a plurality of types of the light-emitting elements having different light-emitting characteristics. [3] The lighting device for plant growth according to [1] or [2], in which light passing through the phosphor substrate has a peak in the range of 400 nm to 500 nm inclusive in a spectrum diagram of the light. [4] The lighting device for plant growth according to any of [1] to [3], in which light passing through the phosphor substrate has a peak in the range of 600 nm to less than 700 nm in a spectrum diagram of the light. [5] The lighting device for plant growth according to any of [1] to [4], in which light passing through the phosphor substrate has a peak in the range of 700 nm to 800 nm inclusive in a spectrum diagram of the light. [6] The lighting device for growing a plant according to any one of [1] to [5], wherein the light passing through the phosphor substrate has peaks in the region of 400 nm to 500 nm and the region of 600 nm to less than 700 nm in a spectrum of the light. [7] The lighting device for growing a plant according to any one of [1] to [6], wherein the light passing through the phosphor substrate has peaks in the region of 400 nm to 500 nm and the region of 700 nm to 800 nm in a spectrum of the light. [8] The lighting device for growing a plant according to any one of [1] to [7], wherein the light passing through the phosphor substrate has peaks in the region of 600 nm to less than 700 nm and the region of 700 nm to 800 nm in a spectrum of the light. [9] The lighting device for plant growth according to any one of [1] to [8], wherein the light passing through the phosphor substrate has peaks in a region of 400 nm or more and 500 nm or less, a region of 600 nm or more and less than 700 nm, and a region of 700 nm or more and 800 nm or less in a spectrum diagram of the light.

[10] The lighting device for growing a plant according to any one of [1] to [9], wherein the plurality of light-emitting elements include light-emitting elements that emit light having a peak in the range of 400 nm to 500 nm in a light spectrum, and the light that has passed through the phosphor substrate has a peak in the range of 600 nm to 700 nm in a light spectrum.

[11] The lighting device for growing a plant according to any one of [1] to

[10] , wherein the area of ​​the region on which the light-emitting elements are mounted is 30% or less of the area of ​​one surface of the phosphor substrate.

[12] The lighting device for growing a plant according to any one of [1] to

[11] , wherein the phosphor substrate includes at least one of an α-sialon phosphor containing Eu, a β-sialon phosphor containing Eu, a CASN phosphor containing Eu, and a SCASN phosphor containing Eu.

[13] The lighting device for growing a plant according to any one of [1] to

[12] , wherein the light-emitting elements include a CSP packaged to a chip size and incorporating an LED.

[14] The lighting device for growing a plant according to

[13] , wherein the sealing layer of the CSP is a translucent resin that does not contain a phosphor.

[15] The lighting device for growing a plant according to

[13] , wherein the sealing layer of the CSP is a translucent resin that contains a phosphor.

[0007] According to the present invention, there is provided a lighting device for growing plants that suppresses variations in light intensity in an area where plants are arranged.

[0008] 1 is a plan view of the front side of the lighting device for growing a plant according to the present embodiment; FIG. 2 is a plan view of the back side of the lighting device for growing a plant according to the present embodiment; FIG. 3 is a cross-sectional view taken along line A-A' in FIG. 1; FIG. 4 is a diagram of a phosphor substrate as viewed from the front side; FIG. 5 is a diagram showing the light-emitting operation of the lighting device for growing a plant according to the present embodiment; FIG. 6 is a diagram showing a pattern forming step; FIG. 7 is a diagram showing a groove forming step; FIG. 8 is a diagram showing a solder arranging step; FIG. 9 is a diagram showing a first stage of a phosphor layer arranging step; FIG. 10 is a diagram showing a second stage of a phosphor layer arranging step; and FIG. 11 is a diagram showing a bonding step.

[0009] Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, like components are designated by like reference numerals, and the description thereof will be omitted as appropriate.

[0010] Fig. 1 is a plan view of one surface (e.g., the front surface) of a lighting device 100 for growing a plant according to this embodiment. Fig. 2 is a plan view of the opposite surface (e.g., the back surface) of the lighting device 100 for growing a plant. The surface of the lighting device 100 for growing a plant on which the light-emitting elements 30 are provided, i.e., the surface that emits light, is referred to as the front surface, and the opposite surface is referred to as the back surface. Fig. 3 is a cross-sectional view taken along line A-A' in Fig. 1. The lighting device 100 for growing a plant includes a phosphor substrate 20 and a plurality of light-emitting elements 30.

[0011] As shown in Fig. 1, the plurality of light-emitting elements 30 are fixed to the phosphor substrate 20 in a state where they are regularly arranged across the entire surface of the phosphor substrate 20. For example, as shown in Fig. 1, the plurality of light-emitting elements 30 are periodically arranged in a plurality of rows, and each row is shifted by one period from the adjacent rows. Alternatively, the plurality of light-emitting elements 30 may be arranged in a lattice pattern at equal intervals. However, at least some of the light-emitting elements 30 may not be regularly arranged.

[0012] The light-emitting element 30 of the plant growth lighting device 100 is supplied with power from an external power source (not shown) by direct connection of lead wires or via a connector. This causes the light-emitting element 30 to emit light. Furthermore, the phosphor substrate 20 uses the light emitted by the light-emitting element 30 as excitation light to excite the element and emit light. The plant growth lighting device 100 emits the light from the phosphor substrate 20 as artificial light for growing plants.

[0013] The correlated color temperature of the light emitted by the light-emitting element 30 of this embodiment is, for example, 3,018 K. Preferably, the plant growth lighting device 100 is cooled (dissipates heat) during light-emitting operation by using a heat sink (not shown) or a cooling fan (not shown) so that the temperature remains below room temperature, for example, 100°C.

[0014] The shape of the phosphor substrate 20 when viewed from the front and back sides is, for example, rectangular. Furthermore, as shown in FIG. 1 , the phosphor substrate 20 preferably includes a through-hole 1. The through-hole 1 can be used as a positioning hole during the manufacture of the lighting device for plant growth 100. Furthermore, the through-hole 1 is used as a screw hole for attachment to ensure heat dissipation to the (light-emitting) lamp housing (to prevent the substrate from warping or lifting). Details of each component of the lighting device for plant growth 100 will be described below.

[0015] [Phosphor Substrate 20] A plurality of light-emitting elements 30 are arranged on the phosphor substrate 20. The phosphor substrate 20 serves to hold these elements. As shown in FIG. 3 , the phosphor substrate 20 includes a phosphor layer 21, a circuit pattern layer 22, an insulating layer 23, and a back pattern layer 24. These layers are stacked in this order starting from the side on which the light-emitting elements 30 are provided. The phosphor layer 21 is made of a phosphor material and serves to emit light using light emitted by the light-emitting elements 30 as excitation light. The circuit pattern layer 22 and the back pattern layer 24 are provided to supply power to the light-emitting elements 30. The insulating layer 23 is made of an insulating material and supports the above-mentioned components while preventing the circuit pattern layers 22 and the back pattern layers 24 from shorting out with each other.

[0016] <Phosphor Layer 21> The phosphor layer 21 is formed so as to cover the circuit pattern layer 22. The phosphor layer 21 is formed, for example, on at least a part of the area of ​​the circuit pattern layer 22 excluding the area where the light emitting elements 30 are arranged. In other words, the phosphor layer 21 is formed in the area surrounding the area where the light emitting elements 30 are arranged on the circuit pattern layer 22. The phosphor layer 21 is preferably formed on most of the area of ​​the circuit pattern layer 22 excluding the area where the light emitting elements 30 are arranged, and specifically, it is preferably formed on 80% or more of the area of ​​the circuit pattern layer 22 excluding the area where the light emitting elements 30 are arranged.

[0017] The phosphor layer 21 is, for example, composed of a phosphor and a binder, which will be described later. The phosphor contained in the phosphor layer 21 is fine particles dispersed and held in the binder, and has the property of exciting the light emitted from the light-emitting element 30 using the light as excitation light. The binder may be, for example, an epoxy-based, acrylate-based, or silicone-based binder, as long as it has insulating properties equivalent to those of the binder contained in the solder resist.

[0018] Regarding the excitation properties of the phosphor described above, specifically, the phosphor preferably has a property such that when the light emitted from the light-emitting element 30 is used as excitation light, the peak emission wavelength is a wavelength that is easily absorbed by plants. The wavelength that is easily absorbed by plants is a wavelength near the peak of the absorption spectrum of chlorophyll (chlorophyll) contained in the plant, and varies depending on the type of plant, but is, for example, 350 nm to 800 nm. More specifically, the light that has passed through the phosphor substrate 200 preferably has a peak in the range of 400 nm to 500 nm in the spectrum of the light, preferably in the range of 600 nm to less than 700 nm, and preferably in the range of 700 nm to 800 nm. Furthermore, in the spectrum of the light that has passed through the phosphor substrate 200, it is more preferable that the light has peaks in the range of 400 nm to 500 nm and the range of 600 nm to less than 700 nm, more preferably in the range of 400 nm to 500 nm and the range of 700 nm to 800 nm, even more preferably in the range of 600 nm to less than 700 nm and the range of 700 nm to 800 nm, and even more preferably in the range of 400 nm to 500 nm, the range of 600 nm to less than 700 nm, and the range of 700 nm to 800 nm. This allows plants to be grown efficiently.

[0019] The phosphor contained in the phosphor layer 21 of this embodiment may be, for example, one or a combination of two or more selected from an α-type sialon phosphor containing Eu, a β-type sialon phosphor containing Eu, a CASN phosphor containing Eu, and a SCASN phosphor containing Eu. In addition to these, phosphors such as YAG, LuAG, BOS, and other visible light-excited phosphors may also be included.

[0020] The α-sialon phosphor containing Eu has the general formula: M ｘ EU ｙ Si １２－（ｍ＋ｎ） Al （ｍ＋ｎ） O ｎ N １６－ｎ In the above general formula, M is one or more elements selected from the group consisting of Li, Mg, Ca, Y, and lanthanide elements (excluding La and Ce), including at least Ca, and when the valence of M is a, ax+2y=m, where x is 0<x≦1.5, 0.3≦m<4.5, and 0<n<2.25.

[0021] The β-type sialon phosphor containing Eu has the general formula: Si ６－ｚ Al ｚ O ｚ N ８－ｚ (z=0.005 to 1) and divalent europium (Eu ２＋ ) is a solid solution phosphor.

[0022] Furthermore, examples of nitride phosphors include Eu-containing CASN phosphors and Eu-containing SCASN phosphors.

[0023] A CASN phosphor containing Eu (an example of a nitride phosphor) is, for example, represented by the formula CaAlSiN ３ :Eu ２＋ and Eu ２＋ The term "CASN phosphor" refers to a red phosphor that uses as an activator an alkaline earth silicon nitride crystal as a matrix. Note that the definition of a CASN phosphor containing Eu in this specification excludes a SCASN phosphor containing Eu.

[0024] A SCASN phosphor containing Eu (an example of a nitride phosphor) is, for example, represented by the formula (Sr, Ca)AlSiN３ :Eu ２＋ and Eu ２＋ This refers to a red phosphor that uses as an activator an alkaline earth silicon nitride crystal as a matrix.

[0025] <Circuit Pattern Layer 22> Fig. 4 is a diagram of the phosphor substrate 20 as seen from the front surface side, and is a plan view illustrating the circuit pattern layer 22 with the phosphor layer 21 omitted. The circuit pattern layer 22 according to this embodiment is a conductive layer formed on the front surface side of the insulating layer 23. The material constituting the circuit pattern layer 22 is not particularly limited as long as it is conductive, and is, for example, copper.

[0026] The circuit pattern layer 22 is a pattern provided on the insulating layer 23, and is electrically connected to terminals (not shown) to which a connector (not shown) for supplying power to the plant growth lighting device 100 is joined. The circuit pattern layer 22 supplies power supplied from an external power source (not shown) to the light-emitting elements 30 via the connector and terminals. As shown in Fig. 4, a portion of the circuit pattern layer 22 forms a plurality of joints 22A to which the plurality of light-emitting elements 30 are respectively joined. That is, the circuit pattern layer 22 is disposed on the insulating layer 23, and is connected to each light-emitting element 30 via the joints 22A.

[0027] The area on the surface of the insulating layer 23 where the circuit pattern layer 22 is arranged is, for example, 60% or more of the area of ​​the surface of the insulating layer 23 .

[0028] <Insulating Layer 23> The insulating layer 23 according to this embodiment maintains each component and also plays a role in preventing short circuits between the circuit pattern layers 22 and the back surface pattern layers 24. The material constituting the insulating layer 23 is not particularly limited as long as it has insulating properties, but for example, an insulating material such as a prepreg obtained by impregnating a fiber substrate such as glass cloth with a resin such as bismaleimide resin can be used.

[0029] <Back Pattern Layer 24> This is a conductive layer provided on the back side of the insulating layer 23. The material constituting the circuit pattern layer 22 is not particularly limited as long as it has conductivity, and is, for example, copper.

[0030] Returning to FIG. 2 , as shown in FIG. 2 , the rear pattern layer 24 is formed, for example, by arranging a plurality of rectangular blocks linearly along the longitudinal direction of the insulating layer 23 so that the blocks are adjacently arranged with a phase shift in the lateral direction. The rear pattern layer 24 is, for example, an independent floating layer. Furthermore, the rear pattern layer 24 overlaps, for example, with 80% or more of the area of ​​the circuit pattern layer 22 disposed on the surface of the insulating layer 23 in the thickness direction of the insulating layer 23 (phosphor substrate 20).

[0031] [Light-Emitting Element 30] The light-emitting element 30 includes common light-emitting elements such as fluorescent lamps and LEDs. However, a CSP (Chip Scale Package) in which a chip-sized flip-chip LED 32 (hereinafter referred to as LED 32) is packaged in a sealing layer 31 is particularly preferred (see FIG. 3). As shown in FIG. 3, the CSP preferably has the LED 32 covered on all five sides except for the bottom surface by the sealing layer 31. The sealing layer 31 may be, for example, a translucent resin containing a phosphor, or a translucent resin not containing a phosphor, such as a transparent resin. When the sealing layer 31 is a resin containing a phosphor, the light from the LED 32 is color-converted by the phosphor in the sealing layer 31 and irradiated to the outside. In the following description, the sealing layer 31 is assumed to be a translucent resin containing a phosphor.

[0032] The spectrum of light emitted to the outside by the light-emitting element 30 preferably has a peak at a wavelength that is easily absorbed by plants (e.g., a wavelength of 400 nm or more and 500 nm or less, a wavelength of 600 nm or more and less than 700 nm, and a wavelength of 700 nm or more and 800 nm or less). This allows plants to grow efficiently. More preferably, the spectrum of light emitted by the excited phosphor layer 21 and the spectrum of light emitted by the light-emitting element 30 each have a peak at a wavelength that is easily absorbed by plants, and these wavelengths are different from each other. For example, it is preferable that the spectrum of light emitted by the light-emitting element 30 has a peak at a wavelength of 400 nm or more and 500 nm or less, and the spectrum of light emitted by the excited phosphor layer 21 has a peak at a wavelength of 600 nm or more and less than 700 nm. This allows plants to grow more efficiently.

[0033] Furthermore, the lighting device for plant growth 100 may include only one type of light-emitting element 30, or may include multiple types of light-emitting elements 30 with different light-emitting characteristics. The light-emitting characteristics include, for example, the spectrum of the intensity of the emitted light and the color temperature of the emitted light. When the lighting device includes multiple types of light-emitting elements 30, it is possible to emit light of various wavelengths necessary for plant growth. Furthermore, when multiple types of light-emitting elements 30 are included, it is preferable that the light-emitting elements 30 of each type are arranged regularly. For example, when three types of light-emitting elements 30A, 30B, and 30C are included, it is preferable that they are arranged so that the order of 30A, 30B, and 30C is repeated.

[0034] Furthermore, the area of ​​the region where the light emitting element 30 is mounted is preferably 30% or less of the area of ​​one surface of the phosphor substrate 20 .

[0035] Depending on the type of plant, it is preferable to set the color temperature of the light irradiated from the plant growth lighting device 10 to a range of 2000 K or more and 6000 K or less. In this case, the configurations of the phosphor layer 21 and the light emitting element 30 and the proportion of the area in the circuit pattern layer 22 where the phosphor layer 21 is disposed are set so that the color temperature of the irradiated light is in a range of 2000 K or more and 6000 K or less.

[0036] [Light Emitting Operation of the Lighting Device 10 for Growing Plants] Next, the light emitting operation of the lighting device 10 for growing plants according to this embodiment will be described with reference to FIG.

[0037] First, when an activation switch (not shown) that activates the plurality of light-emitting elements 30 is turned on, power supply from an external power source (not shown) to the circuit pattern layer 22 begins via a connector (not shown), and the plurality of light-emitting elements 30 emit light L radially, and part of the light L reaches the phosphor layer 21 of the phosphor substrate 20. Below, the behavior of the emitted light L will be explained according to the traveling direction of the light L.

[0038] A portion of the light L emitted from each light-emitting element 30 is emitted to the outside without entering the phosphor layer 21. In this case, the wavelength of the light L remains the same as the wavelength of the light L when it is emitted from each light-emitting element 30.

[0039] Furthermore, a portion of the light L emitted from the light-emitting element 30 is incident on the phosphor layer 21. Here, the "portion of light L" includes light that has not been color-converted by the phosphor (sealing layer 31) of the light-emitting element 30, i.e., light from the LED 32 itself (e.g., blue light (with a wavelength of approximately 470 nm)). When a portion of the light L emitted from the light-emitting element 30 collides with the phosphor dispersed in the phosphor layer 21, the phosphor is excited and emits light. As a result, a portion of the energy of the light L is used to excite the phosphor, resulting in a loss of some of the energy of the light L. As a result, the wavelength of the light L is converted (wavelength conversion is performed). For example, depending on the type of phosphor in the phosphor layer 21 (e.g., when red-based CASN is used as the phosphor), the wavelength of the light L becomes longer (e.g., 650 nm). Furthermore, while some of the light emitted by the excitation of the phosphor layer 21 exits the phosphor layer 21 as is, a portion of the light travels toward the underlying circuit pattern layer 22. A portion of the light is reflected by the circuit pattern layer 22 and emitted to the outside. As described above, when the wavelength of light emitted by the excitation of the phosphor in the phosphor layer 21 is 600 nm or longer, a reflective effect can be achieved even if the circuit pattern layer 22 is made of Cu. Note that the wavelength of the light L may differ from the above example depending on the type of phosphor in the phosphor layer 21, but in either case, wavelength conversion of the light L is achieved. For example, when the wavelength of light emitted by the excitation of the phosphor layer 21 is less than 600 nm, a reflective effect can be achieved by plating the circuit pattern layer 22 or its surface with Ag (plated). Alternatively, a similar effect can be achieved by providing a white reflective layer below the phosphor layer 21 (on the insulating layer 23 side). The reflective layer can be formed, for example, from a white paint such as titanium oxide filler.

[0040] As described above, the light L emitted from the light emitting element 30 is irradiated to the outside via the plurality of optical paths as described above. As a result, the lighting device 100 for growing a plant according to this embodiment has the following advantages.

[0041] First, according to the lighting device for plant growth 100 of this embodiment, light can be emitted using, as excitation light, light radiated toward the phosphor substrate 20 out of the light radially emitted by the light emitting element 30. Therefore, the energy efficiency is better than when simply using the light emitting element 30.

[0042] [Second Effect] Furthermore, in the lighting device for plant growth 100 according to this embodiment, light is emitted from the phosphor layer 21 also from between the light emitting elements 30, so that it is possible to reduce variations in light intensity within the surface of the lighting device for plant growth 100. This makes it possible to suppress variations in light intensity across the entire area where plants are arranged. In other words, with the lighting device for plant growth 100, there are fewer areas within the surface of the lighting device for plant growth 100 where the light intensity is low. For example, it is possible to reduce the photon flux density to 150 μmol / m or more in 90% or more, or 95% or more of the area within the surface of the lighting device for plant growth 100. ２ sec or more, and even 200 μmol / m ２ ・It can be set to sec or more.

[0043] [Third Effect] Furthermore, as described above, the light emitted from the lighting device for growing plants 100 according to this embodiment includes multiple light beams that have traveled through different optical paths. The spectra of these multiple light beams have peaks at different wavelengths. In other words, the lighting device for growing plants 100 according to this embodiment can emit light whose spectrum has multiple peaks.

[0044] [Manufacturing Method of the Lighting Device 100 for Growing Plants] Next, a manufacturing method of the lighting device 100 for growing plants according to this embodiment will be described with reference to FIGS. 6 to 11 .

[0045] <Pattern Forming Step S10> Figure 6 is a diagram showing the pattern forming step S10. In the pattern forming step S10, first, a motherboard MB including an insulating layer 23 and metal layers 26 provided on both sides thereof is prepared. Then, a pattern 22C identical to the circuit pattern layer 22 when viewed from the thickness direction is formed on the metal layer 26 on the front side of the motherboard MB, and a pattern 24C identical to the back side pattern layer 24 is formed on the metal layer 26 on the back side. This step is performed, for example, by etching using a mask pattern (not shown).

[0046] <Groove Forming Step S20> Figure 7 is a diagram showing the groove forming step S20, which follows the pattern forming step S10. The groove forming step S20 is a step of forming a plurality of grooves 22E on the surface of the pattern 22C. This step is performed, for example, by etching using a mask pattern (not shown). The pattern forming step S10 and the groove forming step S20 form a circuit pattern layer 22 including a bonding surface 22A.

[0047] 8 is a diagram showing the solder placement step S30, which follows the groove formation step S20. The solder placement step S30 is a step of placing solder SP on each bonding surface 22A of the circuit pattern layer 22. This step is performed by, for example, a printing method.

[0048] <Phosphor Layer Arrangement Step S40> FIG. 9 is a diagram showing the first stage of the phosphor layer arrangement step S40, which follows the solder arrangement step S30. FIG. 10 is a diagram showing the second stage of the phosphor layer arrangement step S40. The phosphor layer arrangement step S40 is a step of laminating a phosphor pattern in the region 22D of the circuit pattern layer 22 where the phosphor layer 21 is to be arranged. In this step, the phosphor layer 21 is arranged by, for example, transferring phosphor patterns 21A, 21B, and 21C three times, each having a thickness one-third that of the phosphor layer 21. In the first stage of the phosphor layer arrangement step S40 shown in FIG. 9, the phosphor pattern 21A is arranged, and in the second stage of the phosphor layer arrangement step S40 shown in FIG. 10, the phosphor patterns 21B and 21C are arranged. In the phosphor layer arrangement step S40, the phosphor layer 21 is arranged so that the thickness of the phosphor layer 21 is equal to or less than half the thickness of the light-emitting element 30, for example. The phosphor layer 21 is not limited to one including three layers of phosphor patterns, but may include two layers or four or more layers of phosphor patterns.

[0049] <Bonding Step S50> Fig. 11 is a diagram showing the bonding step S50. The bonding step S50 is a step of mounting a plurality of light-emitting elements 30 on the phosphor substrate 20. In the bonding step S50, the electrodes of the plurality of light-emitting elements 30 are aligned and bonded to the bonding surfaces 22A on which the solder SP was placed in the solder placement step S30. The bonding step S50 is performed by, for example, a reflow process.

[0050] Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various other configurations may be adopted. Furthermore, the present invention is not limited to the above-described embodiments, and modifications and improvements within the scope of achieving the object of the present invention are included in the present invention.

[0051] This application claims priority based on Japanese Patent Application No. 2023-207835, filed December 8, 2023, the disclosure of which is incorporated herein by reference in its entirety.

[0052] REFERENCE SIGNS LIST 100 Plant growth lighting device 20 Phosphor substrate 21 Phosphor layer 22 Circuit pattern layer 23 Insulation layer 24 Back surface pattern layer 30 Light emitting element 31 Sealing layer 32 LED SP Solder

Claims

1. A lighting device for growing plants comprising: a phosphor substrate; and a plurality of light-emitting elements mounted on one side of the phosphor substrate.

2. The lighting device for growing plants according to claim 1, comprising a plurality of types of the light-emitting elements having different light-emitting characteristics.

3. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has a peak in the region of 400 nm or more and 500 nm or less in a spectrum diagram of the light.

4. The lighting device for growing plants according to claim 1 or 2, wherein the light that has passed through the phosphor substrate has a peak in the region of 600 nm or more and less than 700 nm in a spectrum diagram of the light.

5. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has a peak in the region of 700 nm or more and 800 nm or less in a spectrum diagram of the light.

6. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has peaks in a region of 400 nm or more and 500 nm or less and a region of 600 nm or more and less than 700 nm in a spectrum diagram of the light.

7. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has peaks in the region of 400 nm or more and 500 nm or less and in the region of 700 nm or more and 800 nm or less in a spectrum diagram of the light.

8. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has peaks in a region of 600 nm or more and less than 700 nm and in a region of 700 nm or more and 800 nm or less in a spectrum diagram of the light.

9. The lighting device for growing plants according to claim 1 or 2, wherein the light passing through the phosphor substrate has peaks in a region of 400 nm or more and 500 nm or less, a region of 600 nm or more and less than 700 nm, and a region of 700 nm or more and 800 nm or less in a spectrum diagram of the light.

10. The lighting device for growing plants according to claim 1 or 2, wherein the plurality of light-emitting elements include a light-emitting element that emits light having a peak in the region of 400 nm or more and 500 nm or less in a light spectrum diagram, and the light that passes through the phosphor substrate has a peak in the region of 600 nm or more and 700 nm or less in a light spectrum diagram.

11. The lighting device for growing plants according to claim 1 or 2, wherein an area of ​​the region on which the light-emitting element is mounted is 30% or less of an area of ​​one surface of the phosphor substrate.

12. The lighting device for growing plants according to claim 1 or 2, wherein the phosphor substrate contains at least one of an α-type SiAlON phosphor containing Eu, a β-type SiAlON phosphor containing Eu, a CASN phosphor containing Eu, and a SCASN phosphor containing Eu.

13. The lighting device for growing plants according to claim 1 or 2, wherein the light-emitting element includes a CSP in which an LED is incorporated and packaged to a chip size.

14. The lighting device for growing plants according to claim 13, wherein the sealing layer of the CSP is a translucent resin that does not contain phosphor.

15. The lighting device for growing a plant according to claim 13, wherein the sealing layer of the CSP is a translucent resin containing a phosphor.

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