Photosensitive resin composition film, cured product, scintillator panel using same, and semiconductor device

Abstract

A photosensitive resin composition film, containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photo-cationic polymerization initiator, wherein a transmittance Tα (%) per unit film thickness at a wavelength of 405 nm on one surface thereof and a transmittance Tβ (%) per unit film thickness at a wavelength of 405 nm on the other surface thereof satisfy formula (1), which is Tα > Tβ, and with respect to the thickness of the photosensitive resin composition film, a content C10 (mass%) of the photo-cationic polymerization initiator (C) at a depth of 10% from the surface on the side where the transmittance per unit film thickness at a wavelength of 405 nm is Tα (%) and a content C90 (mass%) of the photo-cationic polymerization initiator (C) at a depth of 90% from said surface satisfy formula (2) below. Provided is a photosensitive resin composition film capable of forming a high aspect ratio pattern. (2): 0.050 ≤ C10 / C90 ≤ 0.85

Description

Photosensitive resin composition film, cured product, scintillator panel and semiconductor device using the same

[0001] The present invention relates to a photosensitive resin composition film, a cured product thereof, a method for producing the same, and a scintillator panel and a semiconductor device using the same.

[0002] Digital radiation detection devices such as flat panel detectors (FPDs) are used in the medical field and industrial applications such as structural inspection and baggage inspection. Indirect conversion FPDs use a scintillator panel to convert X-rays into visible light. The scintillator panel has a phosphor layer (scintillator layer) containing a phosphor such as gadolinium oxysulfide (GOS), which emits light when irradiated with X-rays. The light emitted from the scintillator panel is converted into an electrical signal using a sensor (photoelectric conversion layer) including a thin film transistor (TFT) or a charge-coupled device (CCD), thereby converting X-ray information into digital image information. However, scintillator panels have a problem in that the light emitted from the radioactive phosphor is scattered within the phosphor-containing layer (phosphor layer), reducing the sharpness of the resulting image.

[0003] Therefore, in order to reduce the effect of light scattering, a method of filling a space partitioned by partitions with a phosphor has been proposed.Furthermore, as a technology for solving the problem of brightness reduction caused by partitions, a scintillator panel has been proposed which includes a substrate, partitions formed on the substrate, and a scintillator layer partitioned by the partitions and containing a phosphor, wherein the partitions contain one or more compounds (P) selected from the group consisting of polyimide, polyamide, polyamideimide, and polybenzoxazole (see, for example, Patent Document 1).

[0004] On the other hand, when scintillator panels are used for industrial purposes such as food and electronic components, the brightness of the scintillator panel tends to decrease over time due to continuous irradiation with high-energy X-rays during in-line inspection. To address this issue, a scintillator panel has been proposed that has a substrate and a scintillator layer containing a phosphor, the scintillator layer including a binder resin having a π-conjugated structure composed of seven or more atoms, the glass transition point of the binder resin being 30 to 430°C, and the film thickness of the scintillator layer being 50 to 800 μm (see, for example, Patent Document 2).

[0005] International Publication No. 2021 / 200327 International Publication No. 2022 / 024860

[0006] Although these techniques can improve the brightness of scintillator panels, thicker phosphor layers and thinner partition walls are required to increase the amount of phosphor, particularly in industrial applications. Under these circumstances, partition walls with a higher aspect ratio are required. Furthermore, for applications other than partition walls in scintillator panels, it is also required to form patterns with a high aspect ratio using resin compositions. However, it has been difficult to form patterns such as partition walls with a high aspect ratio, which are required under these circumstances, using conventionally known resin compositions.

[0007] In view of the above problems of the prior art, an object of the present invention is to provide a photosensitive resin composition film that can form a pattern with a high aspect ratio.

[0008] [1] A photosensitive resin composition film containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, wherein a transmittance Tα (%) per unit film thickness at a wavelength of 405 nm on one surface and a transmittance Tβ (%) per unit film thickness at a wavelength of 405 nm on the other surface satisfy the following formula (1): Tα>Tβ (1). A photosensitive resin composition film, wherein a content C10 (mass %) of the (C) photocationic polymerization initiator at a depth of 10% from the surface on the side where the transmittance per unit film thickness at a wavelength of 405 nm is Tα (%), and a content C90 (mass %) of the (C) photocationic polymerization initiator at a depth of 90% from the surface, relative to the thickness of the photosensitive resin composition film, satisfy the following formula (2): 0.050≦C10 / C90≦0.85 (2) [2] The photosensitive resin composition film according to [1], comprising: a first film made of a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator; and a second film made of a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator, wherein the content of the cationic photopolymerization initiator in the first photosensitive resin composition is different from the content of the cationic photopolymerization initiator in the second photosensitive resin composition. [3] The photosensitive resin composition film according to [1] or [2], wherein the resin (A) contains a polyimide, a polyamide, a polyamideimide, and / or a polybenzoxazole. [4] A cured product obtained by curing a photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, wherein the transmittance per unit thickness at a wavelength of 405 nm of one surface, T'α (%), and the transmittance per unit thickness at a wavelength of 405 nm of the other surface, T'β (%), satisfy the following formula (3): T'α > T'β (3) The cured product has a height H (μm) of 100 μm or more. [5] The cured product according to [4], wherein the width L0 (μm) of the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm of the cured product is T'α (%) and the width L100 (μm) of the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm of the cured product is T'β (%), satisfy the following formula (4):L0 / L100≦0.90 (4) [6] The cured product according to [4] or [5], wherein, when Ln is the width at a depth of n% of the height H (μm) of the cured product from the surface on which the transmittance per unit thickness at a wavelength of 405 nm of the cured product is T'α (%), the following formula (5) is satisfied in the range of n to 99%, where n is from 0 to 99%: {L(n+1)−Ln} / (L100−L0) < 0.10 (5) [7] The cured product according to any of [4] to [6], wherein the width L0 (μm) of the surface on which the transmittance per unit thickness at a wavelength of 405 nm of the cured product is T'α (%), the width L100 (μm) of the side on which the transmittance per unit thickness at a wavelength of 405 nm of the cured product is T'β (%), and the height H (μm) satisfy the following formula (7): H / {(L0+L100) / 2}>16.0 (7) [8] The cured product according to any one of [4] to [7], wherein the resin (A) contains polyimide, polyamide, polyamideimide, and / or polybenzoxazole. [9] A method for producing a photosensitive resin composition film according to any one of [1] to [3], comprising the steps of: forming a first film using a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator; and forming a second film on the first film using a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator, wherein the content of the cationic photopolymerization initiator (C) in the first photosensitive resin composition is different from the content of the cationic photopolymerization initiator (C) in the second photosensitive resin composition.

[10] A method for producing the cured product according to any one of [4] to [8], comprising an exposure step of imagewise exposing a photosensitive resin composition film according to any one of [1] to [3], and a development step of removing unexposed areas using a developer.

[11] A scintillator panel having a substrate, partition walls formed on the substrate, and a phosphor layer in cells partitioned by the partition walls, wherein the partition walls are made of the cured product according to any one of [4] to [8].

[12] A semiconductor device having a semiconductor element and an insulating film, wherein the insulating film is made of the cured product according to any one of [4] to [8].

[0009] According to the photosensitive resin composition film of the present invention, a pattern with a high aspect ratio can be easily formed.

[0010] 1 is a cross-sectional view schematically illustrating a radiation detector member including a scintillator panel according to the present invention. 2 is an enlarged cross-sectional view schematically illustrating a substrate and a partition wall portion of the radiation detector member shown in FIG. 1. 3 is a cross-sectional view schematically illustrating a configuration of an inductor, which is one aspect of the semiconductor device according to the present invention.

[0011] A photosensitive resin composition film according to a first embodiment of the present invention contains (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator. The (A) resin maintains the shape of the photosensitive resin composition film and improves its processability. By including (B) an epoxy compound and / or an oxetane compound and (C) a photocationic polymerization initiator, the (C) photocationic polymerization initiator generates an acid upon irradiation with light, which then cures the (B) epoxy compound and / or the oxetane compound by cationic polymerization, resulting in a negative photosensitivity that makes the film insoluble in a developer. Pattern formation using negative photosensitivity results in the formation of a pattern with excellent mechanical properties, since the photocrosslinked exposed portions form a pattern. On the other hand, with a negative photosensitive resin composition film, the amount of exposure light reaching the bottom decreases as the film thickness decreases, resulting in a pattern that is prone to have an inverse tapered shape. A pattern with an inverse tapered shape tends to have a small contact area with the substrate and therefore poor adhesion to the substrate. Therefore, it has been difficult to obtain a pattern with a high aspect ratio with a conventional negative-type photosensitive resin composition film. The photosensitive resin composition film of the present invention is exposed from the surface side, which has a high transmittance, thereby suppressing attenuation of the exposure amount reaching the bottom, and making it possible to obtain a pattern with a high aspect ratio.

[0012] <(A) Resin> Examples of resins include acrylic resins, styrene-based resins, phenolic resins, epoxy resins, polyesters, polyvinyl alcohols, polyamides, polyimides, polyamideimides, and polybenzoxazoles. Two or more of these resins may be used. Among these, resins selected from polyamides, polyimides, polyamideimides, and polybenzoxazoles are preferred, as they improve the mechanical properties of the cured product obtained by curing the photosensitive resin composition film and can form a pattern with a higher aspect ratio and a more forward tapered shape. Resins selected from polyimides and polybenzoxazoles are more preferred.

[0013] The weight average molecular weight of the (A) resin is preferably 1,000 or more and 20,000 or less. By making the weight average molecular weight of the (A) resin 1,000 or more, the film formability of the photosensitive resin composition can be improved. The weight average molecular weight of the (A) resin is more preferably 2,000 or more. On the other hand, by making the weight average molecular weight of the (A) resin 20,000 or less, the solubility of the photosensitive resin composition film in a developer can be improved. The weight average molecular weight of the (A) resin is more preferably 10,000 or less. The weight average molecular weight of the (A) resin in the present invention is measured by gel permeation chromatography (GPC) and calculated in terms of polystyrene.

[0014] From the viewpoint of cationic polymerization, it is preferable that the (A) resin is substantially free of basic functional groups such as amino groups that can inhibit cationic polymerization. By being substantially free of groups that inhibit cationic polymerization, cationic polymerization can be improved, and patterns with higher aspect ratios can be formed. Here, "substantially free" specifically refers to a basic functional group equivalent weight of 1,000 g / eq or more.

[0015] The (A) resin preferably has an alkali-soluble group, which allows the photosensitive resin composition film to have appropriate solubility in an alkaline developer, thereby enhancing the contrast between exposed and unexposed areas. Examples of alkali-soluble groups include phenolic hydroxyl groups, carboxyl groups, silanol groups, and sulfo groups. Two or more of these may be contained. Among these, phenolic hydroxyl groups are preferred. Examples of resins having phenolic hydroxyl groups include polyhydroxyphenyl acrylate, polyhydroxyphenyl methacrylate, polyparahydroxystyrene, and polyamides, polyimides, polyamideimides, and polybenzoxazoles having phenolic hydroxyl groups. Two or more of these may be contained.

[0016] The polyamide, polyimide, polyamideimide, and polybenzoxazole having a phenolic hydroxyl group preferably have a diamine residue having a phenolic hydroxyl group. Examples of the diamine residue having a phenolic hydroxyl group include residues derived from aromatic diamines such as bis(3-amino-4-hydroxyphenyl)hexafluoropropane, bis(3-amino-4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)methylene, bis(3-amino-4-hydroxyphenyl)ether, bis(3-amino-4-hydroxy)biphenyl, 2,2'-ditrifluoromethyl-5,5'-dihydroxyl-4,4'-diaminobiphenyl, bis(3-amino-4-hydroxyphenyl)fluorene, and 2,2'-bis(trifluoromethyl)-5,5'-dihydroxybenzidine, as well as compounds in which a portion of the hydrogen atoms of these aromatic rings or hydrocarbons are substituted with alkyl groups or fluoroalkyl groups having 1 to 10 carbon atoms, halogen atoms, or the like. Two or more of these residues may be contained, and a diamine residue having no phenolic hydroxyl group may also be contained.

[0017] The content of the (A) resin in the photosensitive resin composition film of the present invention is preferably 15 to 70% by mass of the solid content. By containing 15% by mass or more of the (A) resin, the mechanical properties and thermal properties of the cured product obtained by curing the photosensitive resin composition film can be improved. The content of the (A) resin is more preferably 25% by mass or more. On the other hand, by containing 70% by mass or less of the (A) resin, development residue of the photosensitive resin composition film can be suppressed. The content of the (A) resin is more preferably 60% by mass or less. Here, the solid content refers to all components contained in the composition excluding the solvent.

[0018] <(B) Epoxy Compound and / or Oxetane Compound> In the present invention, a compound having an epoxy group or an oxetanyl group is classified as (B) an epoxy compound and / or an oxetane compound, regardless of its molecular weight.

[0019] Examples of epoxy compounds include aromatic epoxy compounds, alicyclic epoxy compounds, aliphatic epoxy compounds, etc. Two or more of these may be contained.

[0020] Examples of aromatic epoxy compounds include glycidyl ethers of mono- or polyhydric phenols having at least one aromatic ring (phenol, bisphenol A, phenol novolak, and alkylene oxide adducts thereof).

[0021] Examples of alicyclic epoxy compounds include compounds obtained by epoxidizing a compound having at least one cyclohexene or cyclopentene ring with an oxidizing agent (e.g., 3,4-epoxycyclohexylmethyl-3,4-epoxycyclohexanecarboxylate).

[0022] Examples of aliphatic epoxy compounds include polyglycidyl ethers of aliphatic polyhydric alcohols or their alkylene oxide adducts (1,4-butanediol diglycidyl ether, 1,6-hexanediol diglycidyl ether, etc.), polyglycidyl esters of aliphatic polybasic acids (diglycidyl tetrahydrophthalate, etc.), and epoxidized products of long-chain unsaturated compounds (epoxidized soybean oil, epoxidized polybutadiene, etc.).

[0023] Examples of oxetane compounds include 3-methyl-3-hydroxymethyloxetane, 3-ethyl-3-hydroxymethyloxetane, 2-ethylhexyl(3-ethyl-3-oxetanylmethyl)ether, 2-hydroxyethyl(3-ethyl-3-oxetanylmethyl)ether, 2-hydroxypropyl(3-ethyl-3-oxetanylmethyl)ether, 1,4-bis[(3-ethyl-3-oxetanylmethoxy)methyl]benzene, oxetanylsilsesquioxane, phenol novolac oxetane, and OXT-191 (trade name, manufactured by Toagosei Co., Ltd.). Two or more of these may be contained.

[0024] The oxetane compound preferably has two or more oxetanyl groups, and has excellent curing properties, allowing for the formation of patterns with higher aspect ratios. The oxetane compound more preferably has four or more oxetanyl groups, and even more preferably has seven or more oxetanyl groups. Examples of oxetane compounds having four or more oxetanyl groups include oxetanyl silsesquioxane, phenol novolac oxetane, and OXT-191 (trade name, manufactured by Toagosei Co., Ltd.). On the other hand, the oxetane compound preferably has 20 or less oxetanyl groups, allowing for the suppression of cracking during pattern processing. Examples of oxetane compounds having 7 to 20 oxetanyl groups include OXT-191 (trade name, manufactured by Toagosei Co., Ltd.).

[0025] The oxetanyl compound preferably has a structure represented by the following general formula (1).

[0026]

[0027] In the above general formula (1), R １ represents an n-valent group having a siloxane bond. ２ represents a hydrogen atom or a monovalent organic group having 1 to 6 carbon atoms. n represents a number ranging from 4 to 30, preferably from 7 to 20.

[0028] R １ has a siloxane bond. The siloxane bond is hydrolyzed by an alkaline developer, and therefore the photosensitive resin composition film has appropriate solubility in the alkaline developer, thereby enhancing the contrast between the exposed and unexposed areas. １ As the silicate, silicate or polysilicate is preferred.

[0029] R ２ The organic group constituting R is preferably an alkyl group such as a methyl group or an ethyl group. The alkyl group may be substituted with a halogen such as fluorine, and when it has a substituent, it is preferably a perfluoroalkyl group such as a trifluoromethyl group or a pentafluoroethyl group. ２ When is a hydrogen atom or a monovalent organic group having 1 to 6 carbon atoms, the solubility of the photosensitive resin composition film in an alkaline developer is excellent, and the developability can be improved.

[0030] Examples of oxetane compounds having the structure represented by the general formula (1) include oxetanylsilsesquioxane, OXT-191 (trade name, manufactured by Toagosei Co., Ltd.).

[0031] The oxetane compound and the epoxy compound preferably have a polyalkylene glycol chain. By having a highly flexible polyalkylene glycol chain, the occurrence of cracks in the photosensitive resin composition film and the cured product after drying can be suppressed. When two or more oxetane compounds and epoxy compounds are contained, it is preferable that at least some of them have a polyalkylene glycol chain.

[0032] The number-average molecular weight of the oxetane compound and / or epoxy compound having a polyalkylene glycol chain is preferably 300 to 4,000 from the viewpoint of compatibility with the (A) resin. By setting the number-average molecular weight to 300 or more, compatibility with the (A) resin and flexibility can be further improved, and cracking can be further suppressed. On the other hand, by setting the number-average molecular weight to 4,000 or less, the epoxy / oxetane equivalent can be appropriately suppressed, curability can be further improved, and patterns with higher aspect ratios can be formed. The chemical structure of the compound having a polyalkylene glycol chain can be analyzed using a combination of nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT-IR), and high-performance liquid chromatography / mass spectrometry (HPLC / MS). The number-average molecular weight of the compound having a polyalkylene glycol chain can be measured by gel permeation chromatography (GPC).

[0033] From the viewpoint of hydrophilicity, the number of carbon atoms in the alkylene group in the repeating unit of the polyalkylene glycol chain is preferably 2 to 6, and more preferably 2. By setting the number of carbon atoms in the alkylene group within this range, the solubility in an alkaline developer can be excellent, and the developability of the photosensitive resin composition film can be improved.

[0034] The number of epoxy groups and oxetanyl groups in the oxetane compound and / or epoxy compound having a polyalkylene glycol chain is preferably 2 or more, which further improves the curing properties of the photosensitive resin composition film and enables the formation of a pattern with a higher aspect ratio. Examples of such oxetane compounds include bis-[(3-ethyloxetan-3-yl)methoxy]polyethylene glycol. Examples of such epoxy compounds include polyethylene glycol diglycidyl ether and polypropylene glycol diglycidyl ether.

[0035] The oxetane compound and the epoxy compound are preferably water-soluble compounds from the viewpoint of solubility in an aqueous developer during development. Specifically, at least one of the oxetane compounds and / or the epoxy compounds is preferably a water-soluble compound that dissolves in 900 parts by mass of water at 20°C within 1 minute per 100 parts by mass of the compound. Examples of water-soluble oxetane compounds and / or epoxy compounds include 3-methyl-3-hydroxymethyloxetane, 3-ethyl-3-hydroxymethyloxetane, glycerol polyglycidyl ether, polyglycerol polyglycidyl ether, ethylene glycol diglycidyl ether, polyethylene glycol diglycidyl ether, polypropylene glycol diglycidyl ether, phenol (EO), ５ Glycidyl ether, lauryl alcohol (EO) １５ Glycidyl ethers and the like.

[0036] The total content of the (B) oxetane compound and epoxy compound in the photosensitive resin composition film of the present invention is preferably 50 to 170 parts by mass per 100 parts by mass of the (A) resin. By making their total content 50 parts by mass or more, cracking in the photosensitive resin composition film can be suppressed. Their total content is more preferably 70 parts by mass or more. On the other hand, by making their total content 170 parts by mass or less, tackiness of the photosensitive resin composition film can be suppressed. Their total content is more preferably 140 parts by mass or less.

[0037] <(C) Photocationic Polymerization Initiator> The (C) photocationic polymerization initiator generates an acid by exposure to light, causing cationic polymerization. Examples of the (C) photocationic polymerization initiator include aromatic iodonium salts, aromatic sulfonium salts, and aromatic borate salts. Two or more of these may be contained. Among these, aromatic sulfonium salts are preferred. Specific examples include diphenyl[(phenylsulfanyl)phenyl]sulfonium hexafluorophosphate, diphenyl[4-(phenylthio)phenyl]sulfonium hexafluoroantimonate(V), diphenyl[4-(phenylsulfanyl)phenyl]sulfonium trifluoride tris(pentafluoroethane-1-ide)phosphate, diphenyl[(phenylsulfanyl)phenyl]sulfonium tetrakis(pentafluorophenyl)borate, CPI-310B, CPI-310FG, CPI-410S, and CPI-410B (trade names, all manufactured by San-Apro Ltd.). Among these, aromatic sulfonium phosphate salts such as CPI-410S, diphenyl[(phenylsulfanyl)phenyl]sulfonium hexafluorophosphate, and diphenyl[4-(phenylsulfanyl)phenyl]sulfonium trifluoride tris(pentafluoroethane-1-ide)phosphate are more preferred because they are less likely to be colored, tend to maintain high transmittance, have high cationic polymerization reactivity, and are capable of forming patterns with higher aspect ratios.

[0038] The content of the (C) photocationic polymerization initiator in the photosensitive resin composition film of the present invention is preferably 0.1 parts by mass or more relative to 100 parts by mass of the (A) resin, which further improves the curability of the photosensitive resin composition film and enables the formation of a pattern with a higher aspect ratio. On the other hand, the content of the (C) photocationic polymerization initiator is preferably 10 parts by mass or less relative to 100 parts by mass of the (A) resin, which enables the stability of the photosensitive resin composition film to be improved.

[0039] <Other Components> The photosensitive resin composition film of the present invention may contain, together with (B) the epoxy compound and / or the oxetane compound, a cationically polymerizable compound other than these. Examples of (B) the cationically polymerizable compound other than the epoxy compound and / or the oxetane compound include ethylenically unsaturated compounds, bicycloorthoesters, spiroorthocarbonates, spiroorthoesters, etc. Two or more of these may be contained.

[0040] Examples of ethylenically unsaturated compounds include aliphatic monovinyl ethers, aromatic monovinyl ethers, polyfunctional vinyl ethers, styrenes, and cationically polymerizable nitrogen-containing monomers. Examples of aliphatic monovinyl ethers include methyl vinyl ether, ethyl vinyl ether, butyl vinyl ether, and cyclohexyl vinyl ether. Examples of aromatic monovinyl ethers include 2-phenoxyethyl vinyl ether, phenyl vinyl ether, and p-methoxyphenyl vinyl ether. Examples of polyfunctional vinyl ethers include butanediol-1,4-divinyl ether and triethylene glycol divinyl ether. Examples of styrenes include styrene, α-methylstyrene, p-methoxystyrene, and tert-butoxystyrene. Examples of cationically polymerizable nitrogen-containing monomers include N-vinylcarbazole and N-vinylpyrrolidone.

[0041] Examples of bicyclo orthoesters include 1-phenyl-4-ethyl-2,6,7-trioxabicyclo[2.2.2]octane, 1-ethyl-4-hydroxymethyl-2,6,7-trioxabicyclo-[2.2.2]octane, and the like.

[0042] Examples of spiro orthocarbonates include 1,5,7,11-tetraoxaspiro[5.5]undecane and 3,9-dibenzyl-1,5,7,11-tetraoxaspiro[5.5]undecane.

[0043] Examples of spiro orthoesters include 1,4,6-trioxaspiro[4.4]nonane, 2-methyl-1,4,6-trioxaspiro[4.4]nonane, and 1,4,6-trioxaspiro[4.5]decane.

[0044] The photosensitive resin composition film of the present invention may further contain additives such as a sensitizer and a surfactant, inorganic particles, and the like, as needed.

[0045] <Photosensitive Resin Composition Film> In the photosensitive resin composition film of the present invention, the transmittance Tα (%) per unit film thickness at a wavelength of 405 nm on one surface and the transmittance Tβ (%) per unit film thickness at a wavelength of 405 nm on the other surface satisfy the following formula (1), i.e., the transmittances of one surface and the other surface are different. Here, the transmittance of the surface with the higher transmittance per unit film thickness at a wavelength of 405 nm is Tα, and the transmittance of the surface with the lower transmittance is Tβ. Here, in the present invention, the "transmittance per unit film thickness" refers to the transmittance per 20 μm. In other words, the transmittance per unit film thickness of a surface is the transmittance measured in the width direction near one surface and near the other surface of a 20 μm-wide sample cut out from the photosensitive resin composition film. Tα>Tβ (1)

[0046] As mentioned above, the thicker a negative-type photosensitive resin composition film is, the more the exposure dose of light reaching the bottom tends to decrease. In the present invention, by exposing the surface on the side where the transmittance per unit film thickness at a wavelength of 405 nm is Tα (%) (hereinafter sometimes referred to as the "high transmittance side surface"), i.e., the high transmittance side surface, a high exposure dose can be maintained all the way to the other surface (bottom) (hereinafter sometimes referred to as the "low transmittance side surface"), and a pattern with a high aspect ratio can be formed. Here, in the present invention, the transmittance at a wavelength of 405 nm, a representative wavelength of ultraviolet light commonly used for exposure, was focused on and used as an index of ultraviolet light transmittance. The difference between Tα (%) and Tβ (%) is preferably 0.5% or more, more preferably 2% or more.

[0047] Examples of the photosensitive resin composition film that satisfies the above formula (1) include an embodiment in which the transmittance changes continuously from one surface to the other surface, an embodiment in which the transmittance changes stepwise, etc. Among these, an embodiment in which the transmittance changes continuously is more preferred from the viewpoint of smoothing the shape of the cured product.

[0048] Here, the transmittance Tα (%) and the transmittance Tβ (%) are measured by cutting a 20 μm-thick sample from three randomly selected locations on the photosensitive resin composition film, cutting the sample into 20 μm-wide sections perpendicular to the surface. The transmittance in the thickness direction of the sample is measured near one surface and near the other surface of the varnish coating film using a microspectrophotometer, and the transmittance Tα (%) and the transmittance Tβ (%) can be determined by calculating the average value.

[0049] Examples of methods for making the transmittance Tα (%) and the transmittance Tβ (%) satisfy the formula (1) include a method of varying the concentration of a compound that absorbs light with a wavelength of 405 nm in the film thickness direction. More specifically, examples of preferred embodiments described below include making a photosensitive resin composition film satisfy the formula (2) described below.

[0050] In the photosensitive resin composition film of the present invention, it is preferable that the content C10 (mass %) of the (C) cationic photopolymerization initiator at a depth of 10% from the surface on the high transmittance side and the content C90 (mass %) of the (C) cationic photopolymerization initiator at a depth of 90% from the surface on the high transmittance side, relative to the thickness of the film, satisfy the following formula (2): 0.050≦C10 / C90≦0.85 (2).

[0051] Here, C10 is an index of the content of (C) photocationic polymerization initiator on the high transmittance side surface, and C90 is an index of the content of (C) photocationic polymerization initiator on the low transmittance side surface. Since (C) photocationic polymerization initiators readily absorb light with a wavelength of 405 nm, the smaller C10 is relative to C90, and the larger Tα is relative to Tβ, allowing for the formation of a pattern with a higher aspect ratio. Furthermore, the greater the content of (C) photocationic polymerization initiator, the more improved the sensitivity and the thicker the pattern. Therefore, by increasing C90 relative to C10, a pattern with a forward tapered shape can be more easily formed. For this reason, C10 / C90 is preferably 0.85 or less. On the other hand, by appropriately increasing C10, the curability of the photosensitive resin composition film can be further improved, allowing for the formation of a pattern with a higher aspect ratio. C10 / C90 is preferably 0.050 or more, more preferably 0.20 or more, more preferably 0.30 or more, and even more preferably 0.45 or more.

[0052] Examples of embodiments that satisfy the above formula (2) include an embodiment in which the content of the (C) photocationic polymerization initiator changes continuously from one surface to the other, an embodiment in which the content of the (C) photocationic polymerization initiator changes stepwise, etc. From the viewpoint of smoothing the shape of the cured product, an embodiment in which the content changes continuously is more preferred.

[0053] Here, C10 and C90 can be measured by the following method. First, a 10 cm x 10 cm photosensitive resin composition film is filed down to a depth of 10% from the high-transmittance side surface and the low-transmittance side surface, and 100 mg of each sample is taken from the high-transmittance side surface at a depth of approximately 10% and a depth of approximately 90%. These samples are used as measurement samples. The chemical structure of the (C) cationic photopolymerization initiator contained in the measurement samples is identified using a combination of NMR, FT-IR, HPLC / MS, etc. 0.5 mL of acetonitrile is added to 10 mg of each measurement sample, followed by ultrasonic treatment for 60 minutes and centrifugation at 20,000 g for 15 minutes. A portion of the supernatant after centrifugation is transferred to a brown measurement vial, and the peak of the anion component derived from the (C) cationic photopolymerization initiator is quantitatively analyzed by HPLC. The C10 and C90 can be determined by calculating the total content of anions and cations derived from the (C) photocationic polymerization initiator from the content of the anion component. When the structure of the (C) photocationic polymerization initiator is known, the content of the (C) photocationic polymerization initiator can be calculated from the known structure and the results of quantitative analysis by HPLC.

[0054] As a method for making C10 and C90 satisfy the formula (2), for example, it is preferable to make the photosensitive resin composition film a laminate of a plurality of photosensitive resin composition films having different contents of the (C) photocationic polymerization initiator. More specifically, a method of producing a photosensitive resin composition film by a preferred production method described later can be mentioned.

[0055] The photosensitive resin composition film of the present invention has a first film made of a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, and a second film made of a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, and it is preferable that the content of the (C) photocationic polymerization initiator in the first photosensitive resin composition is different from the content of the (C) photocationic polymerization initiator in the second photosensitive resin composition. By having a first film and a second film with different contents of the (C) photocationic polymerization initiator, the content of the (C) photocationic polymerization initiator can be easily adjusted to a desired range. The ratio of the content of the (C) photocationic polymerization initiator in the film having a lower content of the (C) photocationic polymerization initiator to the content of the (C) photocationic polymerization initiator in the film having a higher content of the (C) photocationic polymerization initiator in either the first film or the second film is preferably 0.050 or more, more preferably 0.20 or more, even more preferably 0.30 or more, and even more preferably 0.45 or more. On the other hand, this content ratio is preferably 0.85 or less, more preferably 0.75 or less.

[0056] The photosensitive resin composition film of the present invention may further have a protective film on its surface, which can protect the surface from pollutants such as dust and dirt in the atmosphere. Examples of the protective film include polyolefin films and polyester films. It is preferable that the protective film has low adhesive strength with the photosensitive resin composition film.

[0057] The thickness of the photosensitive resin composition film of the present invention is preferably 100 μm or more from the viewpoint of forming a pattern with a higher aspect ratio, while the thickness of the photosensitive resin composition film of the present invention is preferably 1,000 μm or less from the viewpoint of suppressing variation in film thickness.

[0058] Next, a method for producing the photosensitive resin composition film of the present invention will be described. The photosensitive resin composition film of the present invention can be obtained, for example, by mixing (A) a resin, (B) an epoxy compound and / or an oxetane compound, (C) a photocationic polymerization initiator, and, if necessary, a solvent and other components to prepare a photosensitive resin composition liquid (varnish), applying the varnish to a support, and then drying it as necessary.

[0059] The solvent is preferably one that dissolves the components that make up the photosensitive resin composition, and examples thereof include propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, 3-methyl-3-methoxybutyl acetate, acetone, 3-methyl-3-methoxybutanol, N-methyl-2-pyrrolidone, N,N-dimethylacetamide, γ-butyrolactone, etc. Two or more of these may be used.

[0060] Before applying the varnish, the varnish may be filtered using filter paper or a filter.Pressure filtration is preferred as the filtration method, and the filter preferably has a retention particle size of 0.4 to 50 μm.

[0061] Examples of the support include polyethylene terephthalate (PET) film, polyphenylene sulfide film, and polyimide film. The thickness of the support is preferably 10 to 100 μm. The support may be surface-treated, which allows adjustment of adhesion and releasability to the photosensitive resin composition film. Examples of surface treatment agents include silicone, silane coupling agents, aluminum chelating agents, and polyurea.

[0062] Examples of methods for applying the varnish onto a support include screen printing, spin coating using a spinner, spray coating, and coating methods using a coater such as a bar coater, roll coater, die coater, blade coater, calendar coater, meniscus coater, gravure coater, and slit die coater.

[0063] Examples of drying devices include a hot air oven, a hot plate, and an infrared oven. The drying temperature and drying time are preferably set appropriately within a range that volatilizes the solvent and leaves the photosensitive resin composition film in an uncured or semi-cured state. Specifically, the drying temperature is preferably 50 to 150°C, and the drying time is preferably 1 minute to several hours. The drying temperature may be increased in stages; for example, drying may be performed at 70°C, 80°C, and 90°C for 1 minute to several tens of minutes each.

[0064] In the present invention, it is preferable to laminate multiple photosensitive resin composition films each having a different content of (C) photocationic polymerization initiator, which makes it easy to make C10 and C90 satisfy the above formula (2). More specifically, the method includes the steps of forming a first film using a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, and forming a second film on the first film using a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, and it is preferable that the content of the (C) photocationic polymerization initiator in the first photosensitive resin composition is different from the content of the (C) photocationic polymerization initiator in the second photosensitive resin composition. The ratio of the content of the (C) photocationic polymerization initiator in the first photosensitive resin composition to the content of the (C) photocationic polymerization initiator in the second photosensitive resin composition is preferably 0.050 or more, more preferably 0.20 or more, more preferably 0.30 or more, and even more preferably 0.45 or more, while this content ratio is preferably 0.85 or less, more preferably 0.75 or less.

[0065] Methods for forming a second film on a first film include, for example, forming a first film, then applying a second photosensitive resin composition liquid (varnish) to the first film, and then drying the liquid; or forming a first film and a second film, respectively, followed by thermocompression bonding. When a photosensitive resin composition film is formed by the former method, the components diffuse at the interface between the first film and the second film, causing the concentration of the photocationic polymerization initiator (C) to continuously change around the interface. This can prevent the generation of steps at the interface when the photosensitive resin composition film is exposed and developed to form a pattern. Since the pattern formed from such a photosensitive resin composition film has reduced interfacial steps, when used, for example, as a partition wall of a scintillator panel described below, the reflectance can be improved, and the brightness of the scintillator panel can be further improved. Furthermore, when used as an insulating layer in a semiconductor device or electronic component described below, adhesion to coil wiring can be improved, thereby improving the temperature cycle durability of the semiconductor device or electronic component.

[0066] In the former method, the drying time for the first film is preferably about 30 minutes to 1.5 hours. A longer drying time for the second film is preferable. By extending the drying time for the second film, the (C) photocationic polymerization initiator is more diffused at the interface between the first film and the second film, thereby further suppressing the step at the interface. The drying time for the second film is preferably 1 hour or more, more preferably 2 hours or more, and even more preferably 3 hours or more. On the other hand, from the viewpoint of improving the development rate, the drying time for the second film is preferably 6 hours or less, more preferably 5 hours or less.

[0067] The cured product according to the second aspect of the present invention is obtained by curing a photosensitive resin composition containing the above-described (A) resin, (B) epoxy compound and / or oxetane compound, and (C) photocationic polymerization initiator. As such a photosensitive resin composition, the composition constituting the photosensitive resin composition film of the present invention described above is preferred.

[0068] The cross-sectional shape of the cured product of the present invention is preferably trapezoidal.

[0069] In the cured product of the present invention, the transmittance per unit thickness at a wavelength of 405 nm of one surface, T'α (%), and the transmittance per unit thickness at a wavelength of 405 nm of the other surface, T'β (%), satisfy the following formula (3). Here, the transmittance of the surface with the higher transmittance per unit thickness at a wavelength of 405 nm is T'α, and the transmittance of the surface with the lower transmittance is T'β. The surface with the transmittance per unit thickness at a wavelength of 405 nm of T'α (%) may be referred to as the "high transmittance side surface," and the surface with the transmittance per unit thickness at a wavelength of 405 nm of T'β (%) may be referred to as the "low transmittance side surface." Here, in the present invention, the "transmittance per unit thickness" refers to the transmittance per 20 μm. In other words, the transmittance per unit thickness of a surface is the transmittance measured in the width direction near one surface and near the other surface of a 20 μm-wide sample cut from the cured product. T'α>T'β (3)

[0070] Under typical curing conditions, the magnitude relationship between the transmittances of both surfaces before curing and after curing coincide. Therefore, if the cured product satisfies the above formula (3), the pre-cured state will also satisfy the above formula (1). Therefore, when a photosensitive resin composition film is exposed and developed to form a pattern, by exposing from the high transmittance side surface, a high exposure dose can be maintained all the way to the bottom, allowing for the formation of a pattern with a high aspect ratio. Here, in the present invention, focus is placed on the transmittance at a wavelength of 405 nm, a representative wavelength of ultraviolet light commonly used for exposure, and this is used as an index of ultraviolet light transmittance. The difference between Tα' (%) and T'β (%) is preferably 0.5% or more, more preferably 2.0% or more.

[0071] Examples of embodiments that satisfy the above formula (3) include an embodiment in which the transmittance changes continuously from one surface to the other, an embodiment in which the transmittance changes stepwise, etc. Among these, an embodiment in which the transmittance changes continuously is more preferred from the viewpoint of smoothing the shape of the cured product.

[0072] Here, the transmittance T'α(%) and the transmittance T'β(%) can be measured in the same manner as the transmittance Tα(%) and Tβ(%) of the photosensitive resin composition film.

[0073] A preferred method for making T'α (%) and T'β (%) satisfy the above formula (3) is, for example, a method of forming a cured product from the photosensitive resin composition film of the above-mentioned preferred embodiment of the present invention.

[0074] The height H (μm) of the cured product of the present invention is preferably 100 μm or more, from the viewpoint of obtaining a cured product with a higher aspect ratio.

[0075] Furthermore, in the cured product of the present invention, the width L0 (μm) of the high transmittance side surface and the width L100 (μm) of the low transmittance side surface preferably satisfy the following formula (4): L0 / L100 being less than 1 means that the cross-sectional shape of the cured product is a forward tapered shape: L0 / L100≦0.90 (4) L0 / L100 is preferably 0.70 or more, and more preferably 0.75 or more. On the other hand, L0 / L100 is more preferably 0.85 or less.

[0076] The cured product of the present invention preferably satisfies the following formula (5) over the entire range of n from 0 to 99%, where Ln is the width of the cured product at a depth of n% of the height H (μm) of the cured product from the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm is T'α (%). The smaller the maximum absolute value of {L(n+1)-Ln} / (L100-L0) (hereinafter sometimes referred to as the "maximum rate of change in width") over the range of n from 0 to 99%, the smaller the variation in width of the cured product in the depth direction, indicating a shape in which the step at the interface of the cured product is more suppressed. {L(n+1)-Ln} / (L100-L0)< 0.10 (5) For the same reason, the cured product of the present invention preferably satisfies the following formula (6). {L(n+1)-Ln} / (L100-L0)>-0.10 (6) The maximum rate of change in width is more preferably less than 0.060, and even more preferably less than 0.040.

[0077] In the cured product of the present invention, the width L0 (μm) of the high transmittance side surface, the width L100 (μm) of the low transmittance side surface, and the height H (μm) preferably satisfy the following formula (7): H / {(L0+L100) / 2} represents the aspect ratio of the cured product of the present invention, and the larger this value, the larger the aspect ratio: H / {(L0+L100) / 2}>16.0 (7).

[0078] The aspect ratio is more preferably 18.0 or more, more preferably greater than 18.0, more preferably 19.5 or more, and even more preferably greater than 19.5.

[0079] Here, the width L0 (μm) of the high transmittance side surface, the width L100 (μm) and the height H (μm) of the low transmittance side surface can be determined by cutting a cross section perpendicular to the surface and perpendicular to the long side at three randomly selected locations on the cured product, or by polishing the exposed cross section using a polishing device such as a cross-section polisher, and then observing the enlarged cross section using a scanning electron microscope, measuring L0, L100 and H at each location, and calculating the average value.

[0080] A preferred method for making the width L0 of the high transmittance side surface and the width L100 of the low transmittance side surface satisfy the above formula (4) is, for example, a method of forming a cured product from the photosensitive resin composition film of the above-mentioned preferred embodiment of the present invention.

[0081] A preferred method for ensuring that the widths Ln and L(n+1) at a depth of n% of the height H (μm) of the cured product from the surface on the side where T′α (%) satisfies the above formulas (5) and (6) is, for example, a method for forming a cured product from a photosensitive resin composition film according to a preferred embodiment of the present invention, which is obtained by the above-mentioned preferred production method.

[0082] A preferred method for making the width L0 of the high transmittance side surface, the width L100 of the low transmittance side surface, and the height H satisfy the above formula (7) is, for example, a method of forming a cured product from the photosensitive resin composition film of the above-mentioned preferred embodiment of the present invention.

[0083] The cured product of the present invention can be suitably used, for example, as an insulating film in a semiconductor device, a partition wall in a scintillator panel, or an electronic component, as described below.

[0084] <Method for Producing Cured Product> Next, a method for producing the cured product of the present invention will be described. The cured product of the present invention can be obtained, for example, by patterning a photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, (C) a photocationic polymerization initiator, and, if necessary, a solvent and other components, as needed, and then curing the composition.

[0085] The curing method is preferably a method of irradiating (exposing) to actinic rays. If necessary, heating may be performed after the exposure. By heating, curing can be achieved by a thermal crosslinking reaction and a cationic polymerization reaction caused by the (C) photocationic polymerization initiator.

[0086] The patterning method preferably comprises an exposure step of exposing the above-described photosensitive resin composition film of the present invention imagewise to light, and a development step of removing the unexposed areas with a developer.

[0087] First, the photosensitive resin composition film is exposed to light in an imagewise manner. Specifically, in the exposure step, the photosensitive resin composition film is exposed to actinic radiation through a mask having a desired pattern. Examples of actinic radiation used for exposure include ultraviolet light, visible light, electron beams, and X-rays. In the present invention, it is preferable to use i-rays (365 nm), h-rays (405 nm), or g-rays (436 nm) from a mercury lamp.

[0088] Next, in the development step, the unexposed areas are removed with a developer.

[0089] Development can be carried out by spraying the developer onto the photosensitive resin composition film surface, puddling the developer onto the photosensitive resin composition film surface, immersing the photosensitive resin composition film in the developer or immersing it in the developer and applying ultrasonic waves, etc. The development conditions, such as the development time and the temperature of the developer in the development step, may be any conditions that allow the exposed portion to be removed and a pattern to be formed. Examples of the developer include those exemplified as developers in WO 2021 / 200327.

[0090] After development, it is preferable to carry out a rinsing treatment with water. Alternatively, rinsing treatment may be carried out by adding alcohols such as ethanol and isopropyl alcohol, or esters such as ethyl lactate and propylene glycol monomethyl ether acetate to water.

[0091] If necessary, a baking treatment may be carried out before development. This may improve the resolution of the developed pattern and increase the tolerance for development conditions. The baking temperature is preferably in the range of 50 to 180°C, more preferably in the range of 60 to 120°C. The baking time is preferably from 5 seconds to several hours.

[0092] After pattern formation, unreacted (B) epoxy compound and / or oxetane compound and (C) photocationic polymerization initiator remain in the photosensitive resin composition film. Therefore, these may thermally decompose and generate gas during the thermal crosslinking reaction described below. To avoid this, it is preferable to irradiate the entire surface of the photosensitive resin composition film after pattern formation with the above-mentioned exposure light to generate acid from the (C) photocationic polymerization initiator. By doing so, the reaction of the unreacted (B) epoxy compound and / or oxetane compound proceeds during the thermal crosslinking reaction described below, and the generation of gas derived from thermal decomposition can be suppressed.

[0093] After development, the photosensitive resin composition is preferably cured to form a cured product by applying a temperature of 120°C to 300°C to promote a thermal crosslinking reaction. Crosslinking can improve the heat resistance and chemical resistance of the resulting cured product. This heat treatment method can be selected from a method in which the temperature is increased stepwise over a selected temperature range, or a method in which the temperature is increased continuously over a selected temperature range for 5 minutes to 5 hours.

[0094] <Scintillator Panel> The scintillator panel of the present invention has a substrate, partition walls formed on the substrate, and a phosphor layer filled in cells partitioned by the partition walls, the partition walls being made of the cured product of the present invention. The partition walls are preferably provided in a direction substantially perpendicular to the substrate to form cells. The phosphor layer present in each cell is partitioned by the partition walls. The cured product of the present invention can form partition walls with a high aspect ratio. The high aspect ratio of the partition walls allows a larger amount of phosphor to be filled in the cells, thereby improving the brightness of the scintillator panel.

[0095] Hereinafter, embodiments of the scintillator panel of the present invention will be described with reference to the drawings. Note that the drawings are schematic. Furthermore, the present invention is not limited to the embodiments described below.

[0096] FIG. 1 is a cross-sectional view schematically illustrating a radiation detector member including a scintillator panel according to the present invention. The radiation detector member 1 includes a scintillator panel 2 and an output substrate 3. The scintillator panel 2 includes a substrate 4, partition walls 5, and phosphor layers 6 within cells defined by the partition walls 5. A metal reflective layer 11 is formed on the surface of the partition walls 5, and an organic protective layer 12 is provided on the surface of the metal reflective layer 11. The phosphor layer 6 contains phosphors 13 and a binder resin 14. The output substrate 3 includes an output layer 9 and a photoelectric conversion layer 8 having a photodiode, which are disposed in this order on a substrate 10. A barrier layer 7 may be provided on the photoelectric conversion layer 8. The light-emitting surface of the scintillator panel 2 and the photoelectric conversion layer 8 of the output substrate 3 are preferably bonded or adhered to each other via the barrier layer 7. Light emitted from the phosphor layer 6 reaches the photoelectric conversion layer 8, where it is photoelectrically converted and output. Each of these components is described below.

[0097] <Substrate> The material constituting the substrate preferably has radiation transparency. Examples of materials constituting the substrate include those exemplified as materials constituting the substrate in WO 2021 / 200327. Among these, polymeric materials having high radiation transparency and high surface smoothness are preferred. Examples of polymeric materials include polyesters such as polyethylene terephthalate and polyethylene naphthalate, polyamides, and polyimides.

[0098] In the case of a substrate made of a polymer material, the thickness of the substrate is preferably 3.0 mm or less.

[0099] <Partitions> The partitions are provided to form at least partitioned spaces (cells). Therefore, in a scintillator panel, the size and pitch of the pixels of the photoelectric conversion elements arranged in a grid pattern can be matched with the size and pitch of the cells of the scintillator panel, so that each pixel of the photoelectric conversion elements can correspond to each cell of the scintillator panel. This allows for a highly sharp image to be obtained.

[0100] The partition walls are preferably made of the cured product of the present invention. By providing partition walls with a high aspect ratio made of the cured product of the present invention, the filling amount of the phosphor in the cells can be increased, thereby improving brightness.

[0101] Fig. 2 is an enlarged cross-sectional view schematically illustrating the substrate and partition wall portions of the radiation detector member shown in Fig. 1. However, the up-down direction is reversed from that in Fig. 1. The partition walls 5 on the substrate 4 have a trapezoidal cross-sectional shape with a height H', a top width L'0, and a bottom width L'100, and are arranged at intervals P. Here, the height H', top width L'0, and bottom width L'100 of the partition walls correspond to the height H, width L0 of the high transmittance side surface, and width L100 of the low transmittance side surface of the cured product of the present invention, respectively.

[0102] The height H' of the partition wall is preferably 100 μm or more. By setting H' to 100 μm or more, the amount of phosphor filled can be increased, thereby further improving brightness. H' is more preferably 200 μm or more. On the other hand, the height H' of the partition wall is preferably 3,000 μm or less. By setting H' to 3,000 μm or less, absorption of emitted light by the phosphor itself can be suppressed, thereby further improving brightness. H' is more preferably 1,000 μm or less.

[0103] The spacing P between adjacent partition walls is preferably 40 μm or more and more preferably 1,000 μm or less. The bottom width L'100 of the partition wall is preferably 3 μm or more and 150 μm or less. The top width L'0 of the partition wall 5 is preferably 3 μm or more and 30 μm or less.

[0104] The aspect ratio (H' / ((L'0+L'100) / 2)), which is the ratio of the barrier rib height H' to the average of the top width L'0 and bottom width L'100 of the barrier rib, is preferably 16 or more, and more preferably greater than 16.0, which allows for a larger phosphor filling amount and further improved brightness. The aspect ratio is more preferably 18 or more, more preferably greater than 18.0, even more preferably 19.5 or more, and even more preferably greater than 19.5. On the other hand, the aspect ratio is preferably 100 or less, which allows for improved barrier rib strength. The aspect ratio is more preferably 50 or less.

[0105] The height H' of the partition wall, the interval P between adjacent partition walls, the bottom width L'100, and the top width L'0 can be measured by cutting a cross section perpendicular to the substrate and perpendicular to the long side, or by observing a cross section exposed by a polishing device such as a cross-section polisher using a scanning electron microscope. Here, L'100 is the width of the partition wall at the contact point between the partition wall and the substrate. Furthermore, L'0 is the width at the top of the partition wall. Each length H', L'0, L'100, and P is calculated by averaging the measured values ​​for partition walls at three randomly selected locations.

[0106] A method for adjusting the aspect ratio of the partition walls to fall within the above range is preferably a method for forming the partition walls from the photosensitive resin composition film of the present invention, and more preferably the photosensitive resin composition film of the above-mentioned preferred embodiment is used.

[0107] <Metallic Reflective Layer> In the scintillator panel of the present invention, it is preferable that the partition wall has a reflective layer containing a metal (hereinafter referred to as a "metallic reflective layer") on its surface. The metallic reflective layer may be provided on at least a portion of the partition wall. The metallic reflective layer has a high reflectivity even when it is a thin film. Therefore, by providing a thin metallic reflective layer, the reflectivity of the partition wall can be improved without reducing the loading amount of the phosphor, thereby further improving the brightness of the scintillator panel. Examples of metallic reflective layers include those exemplified as metallic reflective layers in WO 2019 / 181444.

[0108] <Protective Layer> The scintillator panel of the present invention preferably has a protective layer on the surface of the metal reflective layer. An alloy or the like that has poor resistance to discoloration in the atmosphere is preferably used as the metal reflective layer. However, even in this case, discoloration of the metal reflective layer can be reduced by providing the protective layer. It is believed that a decrease in the reflectance of the metal reflective layer due to a reaction between the metal reflective layer and the phosphor layer is suppressed. This further improves the brightness of the scintillator panel.

[0109] As the protective layer, either an inorganic protective layer or an organic protective layer can be suitably used, and an inorganic protective layer and an organic protective layer can also be laminated and used together as the protective layer.

[0110] <Inorganic Protective Layer> The inorganic protective layer is suitable as a protective layer because it has low water vapor permeability. Examples of the inorganic protective layer include those exemplified as inorganic protective layers in WO 2019 / 181444.

[0111] <Organic protective layer> The organic protective layer is preferably formed from a polymer compound having excellent chemical durability, and preferably contains, for example, polysiloxane or amorphous fluororesin as a main component. Examples of the organic protective layer include those exemplified as organic protective layers in WO 2019 / 181444. Examples of polysiloxane and amorphous fluororesin include those exemplified as materials constituting the organic protective layer in WO 2021 / 200327.

[0112] <Phosphor Layer> The scintillator panel of the present invention has a phosphor layer in each cell defined by partition walls.

[0113] The phosphor layer absorbs the energy of incident radiation such as X-rays and emits electromagnetic waves with wavelengths in the range of 300 nm to 800 nm, i.e., light in the range from ultraviolet light to infrared light, with a focus on visible light. The light emitted from the phosphor layer undergoes photoelectric conversion in the photoelectric conversion layer and is output as an electrical signal through the output layer. The phosphor layer preferably contains a phosphor and a binder resin.

[0114] <Phosphor> Examples of the phosphor include those exemplified as phosphors in WO 2021 / 200327. From the viewpoint of high luminous efficiency, the phosphor is preferably a terbium-activated rare earth oxysulfide phosphor.

[0115] <Binder Resin> Examples of the binder resin include those exemplified as binder resins in WO 2021 / 200327.

[0116] The binder resin is preferably in contact with the protective layer. In this case, it is sufficient that the binder resin is in contact with at least a portion of the protective layer. This makes it difficult for the phosphor to fall out of the cell in the scintillator panel. Note that the binder resin may be filled in the cell with almost no voids, as shown in FIG. 1, or may be filled with voids.

[0117] As described above, the scintillator panel of the present invention provides a high brightness image.

[0118] <Method for manufacturing scintillator panel> The method for manufacturing a scintillator panel of the present invention preferably includes, for example, a partition wall forming step of forming partition walls made of the cured product of the present invention on a substrate to separate cells, a reflective layer forming step of forming a metal reflective layer or a protective layer on the surface of the partition walls as needed, and a filling step of filling the cells separated by the partition walls with a phosphor. In the following description, explanations of matters common to those described in the above-mentioned embodiment of the scintillator panel will be omitted as appropriate.

[0119] <Partition Wall Forming Step> Partition walls of a desired shape are formed on a substrate in the same manner as in the above-mentioned <Method for Producing a Cured Product>. In the method for producing a scintillator panel of the present invention, the substrate used in forming the partition walls may be used as the substrate for the scintillator panel, or the partition walls may be peeled from the substrate and then placed on the substrate. The partition walls may be peeled from the substrate by any known method, such as providing a peel-aid layer between the substrate and the partition walls.

[0120] <Reflective layer forming step> When a metal reflective layer, an inorganic protective layer and / or an organic protective layer are provided on the surface of the partition wall, examples of the method for forming these include the methods exemplified as the forming steps in WO 2019 / 181444 and WO 2021 / 200327.

[0121] <Filling Step> Examples of a method for filling a phosphor include the methods exemplified as filling steps in WO 2019 / 181444 and WO 2021 / 200327.

[0122] <Semiconductor Device> The semiconductor device of the present invention has a semiconductor element and an insulating film made of the cured product of the present invention. Examples of semiconductor devices include electro-optical devices and semiconductor circuit boards in which semiconductor elements are connected to a substrate, electronic devices including these, and electronic components such as multilayer wiring boards that connect semiconductor elements. Examples of insulating films include interlayer insulating films for inductors, passivation films for semiconductors, surface protection films for semiconductor elements, interlayer insulating films between semiconductor elements and wiring, between multiple semiconductor elements, and between wiring layers in multilayer wiring for high-density packaging, and insulating films for organic electroluminescent devices. Having a high-aspect ratio insulating film made of the cured product of the present invention allows for improved wiring density.

[0123] The thickness of the insulating film is preferably 100 μm or more from the viewpoint of further improving the wiring density, and is preferably 1,000 μm or less from the viewpoint of suppressing warpage of the semiconductor device due to film stress.

[0124] The aspect ratio of the insulating film can be calculated by H / {(L0+L100) / 2}, where L0 (μm) is the width of the high transmittance side surface, L100 (μm) is the width of the low transmittance side surface, and H (μm) is the height. The aspect ratio of the insulating film is preferably 16 or more, and more preferably greater than 16.0. The aspect ratio is preferably 30 or less, and more preferably 30.0 or less.

[0125] The cured product of the present invention can be easily formed into a pattern with a high aspect ratio, and is therefore preferably used for an inductor, which is a semiconductor device that requires an insulating film with a high aspect ratio.

[0126] 3 is a cross-sectional view showing a schematic configuration of an inductor, which is one embodiment of the semiconductor device of the present invention. Inductor 15 has coil 17 and insulating film 16 that maintains insulation between coils 17, with resin layers 18 sandwiched between them on the top and bottom of substrate 19. Inductor 15 also has magnetic agent 21 sandwiched between insulating films 20, and is sealed with molded resin 22.

[0127] By using the cured product of the present invention as the insulating film of an inductor, it is possible to form an insulating film that exhibits sufficient insulating properties even when the pattern width is small, which allows the cross-sectional area of ​​the coil wiring to be increased, thereby increasing the inductance of the inductor.

[0128] The present invention will be described in more detail below with reference to Examples and Comparative Examples. The compounds used in the Examples and Comparative Examples were synthesized by the following methods.

[0129] Synthesis Example 1: Synthesis of Polyimide A-1 Under a dry nitrogen stream, 29.30 g (0.08 mol) of 2,2-bis(3-amino-4-hydroxyphenyl)hexafluoropropane (hereinafter abbreviated as "BAHF") (manufactured by Tokyo Chemical Industry Co., Ltd.) was added to 80 g of γ-butyrolactone (hereinafter abbreviated as "GBL") (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.), and the mixture was stirred and dissolved at 120°C. Next, 30.03 g (0.1 mol) of acid anhydride "RIKACID" (registered trademark) TDA-100 (hereinafter abbreviated as "TDA-100") (manufactured by New Japan Chemical Co., Ltd.) was added together with 20 g of GBL, and the mixture was stirred at 120°C for 1 hour, and then at 200°C for 4 hours to obtain a reaction solution. Next, the reaction solution was poured into 3 L of water, and a white precipitate was precipitated. The precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80° C. for 5 hours to obtain polyimide A-1 having a weight average molecular weight of 4,000 and a basic functional group equivalent of at least 1,000 g / eq.

[0130] Synthesis Example 2: Synthesis of Polyimide A-2 Under a dry nitrogen stream, 32.96 g (0.09 mol) of BAHF was added to 80 g of GBL and dissolved by stirring at 120°C. Next, 30.03 g (0.1 mol) of TDA-100 was added together with 20 g of GBL, and the mixture was stirred at 120°C for 1 hour, and then at 200°C for 4 hours to obtain a reaction solution. Next, the reaction solution was poured into 3 L of water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80°C for 5 hours to obtain polyimide A-2 having a weight average molecular weight of 8,000 and a basic functional group equivalent of 1,000 g / eq or more.

[0131] Synthesis Example 3: Synthesis of Polyamideimide A-3 BAHF (18.3 g, 0.05 mol) (manufactured by Tokyo Chemical Industry Co., Ltd.) was dissolved in 100 mL of acetone (manufactured by Tokyo Chemical Industry Co., Ltd.) and propylene oxide (17.4 g, 0.3 mol) (manufactured by Fujifilm Wako Pure Chemical Industries Co., Ltd.), and the solution was cooled to −15°C. To this solution, a solution prepared by dissolving 3-nitrobenzoyl chloride (20.4 g, 0.11 mol) (manufactured by Tokyo Chemical Industry Co., Ltd.) in 100 mL of acetone (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise. After completion of the addition, the mixture was stirred at −15°C for 4 hours to react, and then the reaction solution was returned to room temperature. The precipitated white solid was filtered off and dried in vacuo at 50°C.

[0132] 30 g of the obtained white solid was placed in a 300 mL stainless steel autoclave and dispersed in 250 mL of methyl cellosolve (Tokyo Chemical Industry Co., Ltd.), and 2 g of 5 mass % palladium on carbon was added. Hydrogen was introduced into the mixture using a balloon, and the mixture was stirred at room temperature to carry out a reduction reaction. After approximately 2 hours, it was confirmed that the balloon was no longer deflating, and stirring was stopped. After stirring was completed, the mixture was filtered to remove the palladium compound catalyst, and the filtrate was concentrated using a rotary evaporator to obtain hydroxyl group-containing diamine compound (a).

[0133] Under a dry nitrogen stream, 31.4 g (0.08 mol) of a hydroxyl group-containing diamine compound (a) was added to 80 g of GBL (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.) and stirred at 120 ° C. Next, 30.0 g (0.1 mol) of TDA-100 (manufactured by New Japan Chemical Co., Ltd.) was added together with 20 g of GBL, and the mixture was stirred at 120 ° C. for 1 hour, and then at 200 ° C. for 4 hours to obtain a reaction solution. Next, the reaction solution was poured into 3 L of water to precipitate a white precipitate. This precipitate was collected by filtration, washed three times with water, and then dried in a vacuum dryer at 80 ° C. for 5 hours to obtain polyamideimide A-3 having a weight average molecular weight of 5,000 and a basic functional group equivalent of 1,000 g / eq or more.

[0134] Other raw materials used in the examples and comparative examples are as follows: (A) Resin A-4: "Marukalinker" (registered trademark) M (manufactured by Maruzen Petrochemical Co., Ltd.), a resin of polyparahydroxystyrene, weight average molecular weight 4,000, and basic functional group equivalent 1,000 g / eq or more (B) Epoxy compound or oxetane compound B-1: OXT-191 (manufactured by Toa Gosei Co., Ltd.), having an average of 12 oxetanyl groups and a structure represented by the general formula (1) above, R １ is polysilicate, R ２ is an ethyl group, and is a water-insoluble compound having no polyalkylene glycol chain. B-2: OXT-121 (manufactured by Toagosei Co., Ltd.), a bifunctional oxetane compound having no polyalkylene glycol chain: a water-insoluble compound. B-3: "DENACOL" (registered trade name) EX-861 (manufactured by Nagase ChemteX Corporation), a bifunctional epoxy compound having a polyethylene glycol chain: a water-soluble compound. B-4: "TEPIC" (registered trademark) -VL (manufactured by Nissan Chemical Industries, Ltd.), a trifunctional epoxy compound having no polyalkylene glycol chain: a water-insoluble compound. (C) Photocationic Polymerization Initiator C-1: CPI-410S (manufactured by San-Apro Ltd.), an aromatic sulfonium phosphate salt. C-2: CPI-410B (manufactured by San-Apro Ltd.), an aromatic sulfonium borate salt.

[0135] Next, the evaluation methods used in the examples and comparative examples will be described.

[0136] <Transmittance> Three randomly selected locations on the photosensitive polyimide varnish coating film prepared in each Example and Comparative Example were cut out in a 20 μm width in the direction perpendicular to the surface to obtain 20 μm thick samples. The transmittance in the thickness direction of each sample was measured using a microspectrophotometer at a position 10 μm from one surface of the varnish coating film and a position 10 μm from the other surface, and the average value of the values ​​at each of the three locations was calculated. The higher transmittance value was designated Tα, and the lower transmittance value was designated Tβ.

[0137] The transmittance was measured in the same manner for three randomly selected locations from the grid-shaped partition walls formed in each Example and Comparative Example, and the average value was calculated. The higher transmittance value was designated as T'α, and the lower transmittance value was designated as T'β.

[0138] <Content of (C) Photocationic Polymerization Initiator> For the photosensitive polyimide varnish coating film prepared in each Example and Comparative Example, the high transmittance side surface and the low transmittance side surface were each filed to a depth of 10%. 100 mg of each portion near the 10% depth and the 90% depth from the high transmittance side surface were collected as measurement samples. 0.5 mL of acetonitrile was added to each 10 mg of each measurement sample, followed by ultrasonic treatment for 60 minutes and centrifugation at 20,000 g for 15 minutes. A portion of the supernatant after centrifugation was transferred to a brown measurement vial, and the peak of the anion component derived from the (C) photocationic polymerization initiator was quantitatively analyzed by HPLC to calculate the content of the (C) photocationic polymerization initiator. The content C10 (mass %) of the (C) photocationic polymerization initiator at a depth of 10% from the surface on the side where the transmittance was Tα (%) and the content C90 (mass %) of the (C) photocationic polymerization initiator at a depth of 90% from the surface were determined.

[0139] <Partition wall height H', top width L'0, bottom width L'100, L'n, L'0 / L'100, maximum rate of change in width, aspect ratio> For three locations randomly selected from the lattice-shaped partition walls formed in each example and comparative example, a cross section perpendicular to the substrate and perpendicular to the long side was cut or the cross section exposed using a polishing device such as a cross-section polisher was observed using a scanning electron microscope to measure the width of the top of the partition wall, the width of the partition wall at the contact part between the partition wall and the substrate, and the height of the partition wall, and the average values ​​were calculated to be L'0, L'100, and H', respectively. From these measured values, L'0 / L'100 and the aspect ratio (H' / ((L'0+L'100) / 2) were calculated. Furthermore, the partition wall width Ln at a depth of n% from the top of the partition wall with respect to the partition wall height H' was measured at 1% depth intervals, and the maximum rate of change in width (maximum value of {L'(n+1)-L'n} / (L'100-L'0)) was calculated. Here, the partition wall width L'n was the average value of the measured values ​​at three locations.

[0140] Example 1 Preparation of Photosensitive Polyimide Varnish 10 g of polyimide A-1 obtained in Synthesis Example 1 as the (A) resin, 10 g of B-1, 1.0 g of B-2, and 1.0 g of B-3 as (B) epoxy compounds and / or oxetane compounds, and 0.066 g of C-1 as (C) cationic photopolymerization initiator were weighed and dissolved in GBL. The amount of GBL added was adjusted so that the solids concentration was 60 mass %, with the components other than GBL being considered as solids. Thereafter, the solution was pressure-filtered using a filter with a retention particle size of 30 μm, to obtain photosensitive polyimide varnish 1 for the high transmittance side.

[0141] (A) 10 g of polyimide A-1 obtained in Synthesis Example 1 as the resin, (B) 10 g of B-1, 1.0 g of B-2, and 1.0 g of B-3 as epoxy compounds and / or oxetane compounds, and (C) 0.22 g of C-1 as a photocationic polymerization initiator were weighed and dissolved in GBL. The amount of GBL added was adjusted so that the solids concentration was 70 mass%, with the components other than GBL being considered as solids. Thereafter, the solution was pressure-filtered using a filter with a retention particle size of 30 μm, to obtain photosensitive polyimide varnish 2 for the low transmittance side.

[0142] <Preparation of Scintillator Panel> <Formation of Partition Walls> A PET film measuring 125 mm in length, 125 mm in width, and 0.25 mm in thickness was used as the substrate. The photosensitive polyimide varnish 2 was applied to the surface of the substrate using a die coater so that the thickness after thermal crosslinking curing would be 70 μm, and the coating was dried for 1 hour in a hot air oven at 110°C to form a coating film of photosensitive polyimide varnish 2. Next, the photosensitive polyimide varnish 1 was applied to the coating film of photosensitive polyimide varnish 2 using a die coater so that the thickness after thermal crosslinking curing would be 280 μm, and the coating was dried for 3 hours in a hot air oven at 110°C to form a coating film of photosensitive polyimide varnish 1.

[0143] Next, the laminate of the photosensitive polyimide varnish coating film was exposed to 5000 mJ / cm using an ultra-high pressure mercury lamp and a bandpass filter that cuts light of wavelengths other than 405 nm through a chrome mask having lattice-shaped openings with a pitch of 200 μm and line widths of 12 μm, 15 μm, and 20 μm. ２The film was exposed to an exposure amount of 100°C for 90 minutes using a hot air oven. After exposure, post-exposure baking was performed using a hot air oven. The exposed and heated coating film was developed in a 0.5% by mass aqueous potassium hydroxide solution at 30°C until the unexposed portions were removed, thereby obtaining a lattice pattern. The obtained lattice pattern was heated in air at 200°C for 60 minutes to be thermally crosslinked and cured, thereby forming lattice partition walls.

[0144] <Formation of Metal Reflective Layer and Inorganic Protective Layer> The formed grid-shaped partition walls were sputtered using a commercially available sputtering device with APC (manufactured by Furuya Metal Co., Ltd.), a silver alloy containing palladium and copper, as a sputtering target to form a metal reflective layer. Sputtering was performed by placing a glass plate near the substrate on which the partition walls were formed, under conditions such that the thickness of the metal layer formed on the glass plate was 300 nm. After forming the metal reflective layer, SiN was sputtered as an inorganic protective layer in the same vacuum batch to form an inorganic protective layer. This was performed under conditions such that the thickness of the inorganic protective layer formed on the glass substrate was 100 nm.

[0145] <Formation of Organic Protective Layer> One part by mass of amorphous fluorine-containing resin "CYTOP" (registered trademark) CTL-809M was mixed with one part by mass of fluorine-based solvent CT-SOLV180 (manufactured by AGC Inc.) to prepare a resin solution.

[0146] The obtained resin solution was vacuum-printed on the partition walls on which the metal reflective layer and the inorganic protective layer had been formed, then dried at 90°C for 1 hour and further heated at 190°C for 1 hour to form an organic protective layer. The cross section of the partition wall was exposed using a triple ion milling device EMTIC3X (manufactured by LEICA), and the cross section of the partition wall was imaged using a field emission scanning electron microscope (FE-SEM) Merlin (manufactured by Zeiss) to measure the thickness of the organic protective layer. The thickness of the organic protective layer on the side surface at the center in the height direction of the partition wall was 1 µm.

[0147] <Formation of phosphor layer> A phosphor paste was prepared by mixing 10 parts by mass of phosphor GOS:Tb (Tb-doped gadolinium oxysulfide) with 5 parts by mass of a 10% by mass binder resin solution prepared by dissolving binder resin "Ethocel" (registered trademark) 7cp (manufactured by The Dow Chemical Company) in benzyl alcohol (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.). The average particle diameter D50 of the phosphor measured using a particle size distribution analyzer MT3300 (manufactured by Nikkiso Co., Ltd.) was 11 μm.

[0148] The obtained phosphor paste was vacuum-printed into cells partitioned by partition walls on which the metal reflective layer, inorganic protective layer, and organic protective layer were formed as described above so that the volume fraction of the phosphor was 65%, and then dried at 150°C for 15 minutes to form a phosphor layer, thereby obtaining a scintillator panel.

[0149] Examples 2 to 9, Comparative Examples 1 and 2 Partition walls and scintillator panels were produced in the same manner as in Example 1, except that the types and amounts (parts by mass) of (A) resin, (B) oxetane compound and / or epoxy compound, and (C) photocationic polymerization initiator were changed as shown in Table 1.

[0150] Example 10 A partition wall and a scintillator panel were produced in the same manner as in Example 1, except that the drying time of the photosensitive polyimide varnish 1 was changed to 2 hours.

[0151] Example 11 A partition wall and a scintillator panel were produced in the same manner as in Example 1, except that the drying time of the photosensitive polyimide varnish 1 was changed to 1 hour.

[0152] Example 12 Photosensitive polyimide varnish 1 was applied to a 50 μm thick PET film using a die coater so that the thickness after thermal crosslinking and curing would be 280 μm, and the applied film was dried at 110° C. for 3 hours to form a coating film of photosensitive polyimide varnish 1. Photosensitive polyimide varnish 2 was also applied to the surface of a glass substrate using a die coater so that the thickness after thermal crosslinking and curing would be 70 μm, and the applied film was dried in a hot air oven at 110° C. for 1 hour to form a coating film of photosensitive polyimide varnish 2. Both substrates, each having a photosensitive polyimide varnish coating film formed thereon, were placed with the coating film facing each other and laminated using a vacuum diaphragm laminator (MVLP-500 / 600, manufactured by Meiki Seisakusho Co., Ltd.) under conditions of an upper and lower heating plate temperature of 80°C, a vacuuming time of 20 seconds, a vacuum pressing time of 30 seconds, and an application pressure of 0.5 MPa. Then, only the PET film was peeled off to form a resin composition film with a thickness of 350 μm on the glass substrate. A partition wall and a scintillator panel were produced in the same manner as in Example 1, except that the obtained resin composition film was used as a laminate of the photosensitive polyimide varnish coating film.

[0153] The results of evaluation of each of the Examples and Comparative Examples by the above-mentioned methods are shown in Tables 3 and 4.

[0154]

[0155]

[0156]

[0157]

[0158] REFERENCE SIGNS LIST 1 Radiation detector member 2 Scintillator panel 3 Output substrate 4 Substrate 5 Partition wall 6 Phosphor layer 7 Diaphragm layer 8 Photoelectric conversion layer 9 Output layer 10 Substrate 11 Metal reflective layer 12 Organic protective layer 13 Phosphor 14 Binder resin 15 Inductor 16 Insulating film 17 Coil 18 Resin layer 19 Substrate 20 Insulating film 21 Magnetic material 22 Molding resin H' Height of partition wall L'0 Top width of partition wall L'100 Bottom width of partition wall P Spacing between adjacent partition walls

Claims

1. A photosensitive resin composition film containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator, in which the transmittance Tα (%) per unit thickness at a wavelength of 405 nm on one surface and the transmittance Tβ (%) per unit thickness at a wavelength of 405 nm on the other surface satisfy the following formula (1): Tα>Tβ (1) A photosensitive resin composition film in which the content C10 (mass%) of the cationic photopolymerization initiator (C) at a depth of 10% from the surface on the side on which the transmittance per unit thickness at a wavelength of 405 nm is Tα (%) and the content C90 (mass%) of the cationic photopolymerization initiator (C) at a depth of 90% from the surface, relative to the thickness of the photosensitive resin composition film, satisfy the following formula (2): 0.050≦C10 / C90≦0.85 (2) 2. The photosensitive resin composition film according to claim 1, comprising a first film made of a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator, and a second film made of a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a cationic photopolymerization initiator, wherein the content of the cationic photopolymerization initiator (C) in the first photosensitive resin composition is different from the content of the cationic photopolymerization initiator (C) in the second photosensitive resin composition.

3. The photosensitive resin composition film according to claim 1 or 2, wherein the resin (A) contains polyimide, polyamide, polyamideimide and / or polybenzoxazole.

4. A cured product obtained by curing a photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, wherein the transmittance T'α (%) per unit thickness at a wavelength of 405 nm on one surface and the transmittance T'β (%) per unit thickness at a wavelength of 405 nm on the other surface satisfy the following formula (3): T'α>T'β (3) The height H (μm) of the cured product is 100 μm or more.

5. The cured product according to claim 4, wherein the width L0 (μm) of the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm is T'α (%) and the width L100 (μm) of the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm is T'β (%) satisfy the following formula (4): L0 / L100≦0.90 (4) 6. The cured product according to claim 4 or 5, wherein Ln is the width at a depth of n% of the height H (μm) of the cured product from the surface on the side where the transmittance per unit thickness of the cured product at a wavelength of 405 nm is T'α (%), and n is in the range of 0 to 99%, the following formula (5) is satisfied: {L(n+1)-Ln} / (L100-L0) < 0.10 (5) 7. The cured product according to any one of claims 4 to 6, wherein the width L0 (μm) of the surface on the side where the transmittance per unit thickness at a wavelength of 405 nm is T'α (%), the width L00 (μm) on the side where the transmittance per unit thickness at a wavelength of 405 nm is T'β (%), and the height H (μm) satisfy the following formula (7): H / {(L0+L100) / 2}>16.0 (7) 8. The cured product according to any one of claims 4 to 7, wherein the resin (A) contains polyimide, polyamide, polyamideimide and / or polybenzoxazole.

9. A method for producing a photosensitive resin composition film according to any one of claims 1 to 3, comprising the steps of: forming a first film using a first photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator; and forming a second film on the first film using a second photosensitive resin composition containing (A) a resin, (B) an epoxy compound and / or an oxetane compound, and (C) a photocationic polymerization initiator, wherein the content of the photocationic polymerization initiator (C) in the first photosensitive resin composition is different from the content of the photocationic polymerization initiator (C) in the second photosensitive resin composition.

10. A method for producing a cured product according to any one of claims 4 to 8, comprising an exposure step of exposing a film of the photosensitive resin composition according to any one of claims 1 to 3 to light in an imagewise manner, and a development step of removing unexposed areas using a developer.

11. A scintillator panel having a substrate, partition walls formed on the substrate, and a phosphor layer filled in cells partitioned by the partition walls, wherein the partition walls are made of the cured product according to any one of claims 4 to 8.

12. A semiconductor device having a semiconductor element and an insulating film, the insulating film being made of the cured product according to any one of claims 4 to 8.

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