Test socket

Abstract

A test socket according to an embodiment of the present invention relates to a test socket which allows both of a terminal located at the center of a semiconductor device and a terminal located in the periphery portion thereof to be in stable contact with conductive portions of the test socket as a conductive portion located at the peripheral portion of the semiconductor device and a conductive portion located at the center thereof are uniformly pressurized when performing a test of a large-area semiconductor device by adjusting, for each region, the resistance of an insulating portion disposed between the conductive portions.

Description

test socket

[0001] The present invention relates to a test socket, and more particularly, to a test socket in which a conductive part at an outer portion and a conductive part at a central portion can be uniformly pressurized when testing a large-area test target element (e.g., a semiconductor device).

[0002] Since semiconductor devices are manufactured through multiple process steps, semiconductor inspection is essential to ensure proper operation. To inspect semiconductor devices, a test socket is required to electrically connect the test equipment to the semiconductor device. Test sockets serve as a means of transmitting signals from the test equipment to the semiconductor device during the inspection process, and are often used in sheet form.

[0003] Fig. 1 is a drawing showing a test socket according to the prior art.

[0004] A test socket according to the prior art is composed of a first insulating sheet (110), a conductive portion (120), a second insulating sheet (130), and an insulating portion (140). The first insulating sheet (110) is placed on the semiconductor device (150) side, and the second insulating sheet (130) is placed on the inspection device (160) side. The conductive portion (120) is placed between the first insulating sheet (110) and the second insulating sheet (130) to fix and support the position of the conductive portion (120) from above and below.

[0005] The first insulating sheet (110) and the second insulating sheet (130) may each be composed of a synthetic resin material. The conductive portion (120) may be composed of a plurality of conductive particles (121) arranged in the thickness direction and distributed within an insulating elastic material. The insulating portion (140) is disposed between the conductive portions (120) to support the conductive portions (120) and may be composed of silicone rubber.

[0006] A plurality of conductive members (120) are formed between the first insulating sheet (110) and the second insulating sheet (130) and extend in the thickness direction at positions corresponding to each terminal (151) of the semiconductor device (150). A plurality of through holes are formed at corresponding positions in the first insulating sheet (110) and the second insulating sheet (130) so that the conductive members (120) can be extended to the outer surfaces of the first insulating sheet (110) and the second insulating sheet (130).

[0007] A test socket is mounted and used on a test device (160) having a plurality of pads (161). When the test device (160) is placed so that each pad (161) and the lower surface of the conductive portion (120) are in contact with each other, the terminal (151) of the semiconductor device (150), which is the device to be tested, is pressed against the upper surface of the conductive portion (120) and then a predetermined electrical signal is applied from the test device (160). When the electrical signal is transmitted from the pad (161) of the test device (160) through the conductive portion (120) to the terminal (151) of the semiconductor device (150), a predetermined electrical test is performed.

[0008] Specifically, the lower surface of the conductive portion (120) is brought into contact with the pad (161) of the inspection device (160), and the semiconductor device (150) is lowered above the test socket so that each terminal (151) comes into contact with the upper surface of the conductive portion (120). In this state, when the semiconductor device (150) is further lowered, the conductive portion (120) is compressed in the thickness direction, and the conductive particles (121) come into contact with each other to form an electrical path, thereby establishing an electrically conductive state. In this state, the inspection device (160) performs an electrical inspection by applying a predetermined electric signal to the semiconductor device (150) via the conductive portion (120).

[0009] Figure 2 is a drawing showing a state in which a conductive part of a test socket according to a prior art has poor contact with a terminal of a semiconductor device.

[0010] Due to the increasing demands for high-performance and multi-functional computing environments, more functions are being integrated into system semiconductor chips. Server semiconductors for high-performance computing tasks such as big data and artificial intelligence are demanding greater functionality and performance. Consequently, the size of semiconductor chips and devices is gradually increasing.

[0011] As the area of ​​the semiconductor device increases, a warpage phenomenon may occur during the manufacturing process, in which the central portion of the semiconductor device (150) bends upward compared to the outer portion. In this case, as illustrated in FIG. 2, the distance between the terminal located in the central portion (220) and the test socket becomes greater than the distance between the terminal located in the outer portion (210) of the semiconductor device (150) and the test socket, and thus poor contact between the terminal and the test socket may occur in the central portion (220) of the semiconductor device.

[0012] Even if the semiconductor device (150) is manufactured flat during the manufacturing process, when the semiconductor device (150) is placed on the top of the test socket and the semiconductor device (150) is pressed, a repulsive force is generated, and a greater repulsive force is generated in the central portion than in the peripheral portion. As a result, when the semiconductor device (150) is placed on the test socket and pressurized, sufficient pressing force is transmitted to the test socket located in the peripheral portion, but sufficient pressing force is not transmitted to the test socket in the central portion due to the repulsive force, so that the conductive portion of the test socket located in the central portion may not be sufficiently compressed, resulting in poor contact.

[0013] Fig. 3 is a diagram analyzing the electrical resistance of a conductive part when testing a large-area semiconductor device using a conventional test socket. It was confirmed that the electrical resistance of the conductive part of the test socket located at the outer part of the semiconductor device is low at 25 mOhm or less, but the electrical resistance of the conductive part of the test socket located at the center of the semiconductor device is very high at 250 mOhm or more. This shows that when testing a large-area semiconductor device using a conventional test socket, poor contact occurs between the semiconductor device and the test socket at the center of the semiconductor device.

[0014] This contact failure in the central area can become more severe as the semiconductor device becomes larger. That is, as the semiconductor device becomes larger, the repulsive force in the central area becomes greater, resulting in a greater difference in the pressing force transmitted to the test socket from the central area and the pressing force transmitted to the test socket from the periphery. In order to obtain the desired conductivity in the conductive part located in the central area, the semiconductor device must be pressed with an excessively large force. However, pressing the semiconductor device with such a large force applies too much force to the periphery of the test socket, which may cause damage starting from the periphery of the test socket, thereby shortening the lifespan of the entire test socket.

[0015] Various embodiments of the present invention have been created to solve the above-described problems, and more specifically, to provide a test socket in which the resistance of an insulating portion arranged between conductive portions is adjusted by region so that when testing a large-area semiconductor device, the conductive portion located at the outer portion and the conductive portion located at the center of the semiconductor device are uniformly pressed, so that both the terminal located at the center of the semiconductor device and the terminal located at the outer portion can stably contact the conductive portion of the test socket.

[0016] The technical problems to be achieved in the present invention are not limited to the technical problems mentioned above, and other technical problems not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0017] According to an embodiment of the present invention for achieving the above-described object, a test socket is provided between a semiconductor device and a test device, and conducts current between a terminal of the semiconductor device and a pad of the test device, the test socket comprising: a first insulating sheet having through holes formed at positions corresponding to the terminals of the semiconductor device and divided into a first region and a second region according to an area in contact with the semiconductor device; a second insulating sheet facing the first insulating sheet and having through holes formed at positions corresponding to pads of the test device; a plurality of conductive portions formed to extend in a vertical direction between the through holes of the first insulating sheet and the through holes of the second insulating sheet; a first insulating pillar having one end attached to the first region of the first insulating sheet and spaced apart from each other between the plurality of conductive portions; and a second insulating pillar having one end attached to the second region of the first insulating sheet and spaced apart from each other between the plurality of conductive portions and having a relatively greater resistance to external pressure than the first insulating pillar.

[0018] Preferably, the first region is determined by at least one of a pitch, warpage and area of ​​the semiconductor device.

[0019] Preferably, the first region is a region in contact with the central portion of the semiconductor device and the second region is a region in contact with the outer portion of the semiconductor device.

[0020] Preferably, the first insulating pillar and the second insulating pillar are each one of a cylindrical shape, a square pillar shape, a polygonal pillar shape, a truncated cone shape, and a polygonal pyramid shape.

[0021] Preferably, the cross-sectional area of ​​the cross-section of the first insulating column is smaller than the cross-sectional area of ​​the cross-section of the second insulating column.

[0022] More preferably, the first insulating pillar and the second insulating pillar are attached and supported between the first insulating sheet and the second insulating sheet, respectively.

[0023] Preferably, the first insulating pillar has one end attached to the first region of the first insulating sheet and the other end spaced from the second insulating sheet.

[0024] More preferably, the first insulating pillar further includes a support having a hardness different from that of the first insulating pillar.

[0025] More preferably, the first insulating pillar is in contact with the second insulating sheet via a support.

[0026] More preferably, the support is one of a cylindrical shape, a square column shape, a hemispherical shape, a polygonal column shape, a truncated cone shape, and a polygonal pyramid shape.

[0027] More preferably, the second insulating pillar further includes a support having a hardness different from that of the second insulating pillar.

[0028] More preferably, the second insulating pillar is attached to the second insulating sheet via a support.

[0029] More preferably, the support is one of a cylindrical shape, a square column shape, a hemispherical shape, a polygonal column shape, a truncated cone shape, and a polygonal pyramid shape.

[0030] Preferably, the conductive portion has upper and lower surfaces of the conductive portion extended outward through the through-holes of the first insulating sheet and the second insulating sheet, and includes a plurality of conductive particles distributed within an elastic insulating material.

[0031] The means for solving the technical problem to be solved by the present invention are not limited to the means for solving the problem mentioned above, and other means for solving the problem that are not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0032] According to various embodiments of the present invention, when testing a large-area semiconductor device, the resistivity of an insulating portion located at the center of the semiconductor device is adjusted to be lower than the resistivity of an insulating portion located at the outer portion, so that the conductive portion located at the outer portion and the conductive portion located at the center of the semiconductor device are uniformly pressed, thereby improving operability and obtaining uniform conductivity, and preventing damage to the outer portion of the test socket due to excessively high pressure pressurization, thereby improving the lifespan of the entire test socket.

[0033] The effects to be achieved by the present invention are not limited to the effects mentioned above, and other effects not mentioned can be clearly understood by a person having ordinary skill in the technical field to which the present invention belongs from the description below.

[0034] Embodiments of the present invention will be described below with reference to the accompanying drawings, wherein like reference numerals represent similar elements, but are not limited thereto.

[0035] Fig. 1 is a drawing showing a test socket according to the prior art.

[0036] Figure 2 is a drawing showing a state in which a conductive part of a test socket according to a prior art has poor contact with a terminal of a semiconductor device.

[0037] Figure 3 is a drawing analyzing the electrical resistance value of a conductive part when testing a large-area semiconductor device using a conventional test socket.

[0038] FIG. 4 is a partial plan view of a test socket according to a first embodiment of the present invention.

[0039] Figure 5 is a cross-sectional side view of the test socket of Figure 4.

[0040] Figure 6 is a cross-sectional side view of a test socket according to a second embodiment of the present invention.

[0041] Figure 7 is a cross-sectional side view of a test socket according to a third embodiment of the present invention.

[0042] Figure 8 is a cross-sectional side view of a test socket according to a fourth embodiment of the present invention.

[0043] Figure 9 is a cross-sectional side view of a test socket according to a fifth embodiment of the present invention.

[0044] FIG. 10 is a drawing illustrating a manufacturing process of a test socket according to a first embodiment of the present invention.

[0045] Fig. 11 is a drawing analyzing the electrical resistance value of a conductive part when testing a large-area semiconductor device using the test socket of the present invention.

[0046] [Explanation of symbols]

[0047] 410: First insulating sheet 420: Conductive part

[0048] 440: First insulation column 450: Second insulation column

[0049] 510: Second insulation sheet

[0050] The terms used in this specification will be briefly explained, and the present invention will be described in detail.

[0051] The terms used in this detailed description have been selected from widely used, current terms, taking into account the functions of the present invention. However, these terms may vary depending on the intentions of engineers in the technical field to which the present invention pertains, precedents, the emergence of new technologies, etc. Furthermore, in certain cases, terms may be arbitrarily selected by the applicant, and in such cases, their meanings will be described in detail in the relevant description of the invention. Therefore, the terms used in the present invention should not be defined simply as names of terms, but rather based on their inherent meanings and the overall content of the present invention.

[0052] When a part of a specification is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise stated.

[0053] Below, with reference to the attached drawings, embodiments of the present invention are described in detail so that those skilled in the art can easily practice the invention. However, the present invention may be implemented in various different forms and is not limited to the embodiments described herein. In addition, in the drawings, parts irrelevant to the description are omitted to clearly explain the present invention, and similar parts are designated with similar reference numerals throughout the specification.

[0054] Fig. 4 is a partial plan view of a test socket according to a first embodiment of the present invention, and Fig. 5 is a side cross-sectional view of the test socket of Fig. 4. The test socket according to the first embodiment of the present invention will be described with reference to Figs. 4 and 5.

[0055] A test socket according to a first embodiment includes a first insulating sheet (410) having through holes formed at positions corresponding to terminals of a semiconductor device, a plurality of conductive portions (420) formed at each of the through holes of the first insulating sheet, and a plurality of insulating pillars (440, 450) having one end attached to the first insulating sheet (410) and spaced apart from each other between the conductive portions (420). The first insulating sheet (410) may be divided into a first region (430) and a second region depending on an area in contact with the semiconductor device.

[0056] The first region (430) is a region that comes into contact with the central portion of the semiconductor device, and may be a region where the repulsive force is relatively strong when the semiconductor device is pressed. The second region is an outer portion other than the first region (430), and may be a region where the repulsive force is relatively weak when the semiconductor device is pressed. The plurality of insulating pillars (440) attached to the first insulating sheet (410) of the first region (430) may be first insulating pillars having relatively small resistance to an external pressing force, and the plurality of insulating pillars (450) attached to the first insulating sheet (410) of the second region may be second insulating pillars having relatively large resistance to an external pressing force.

[0057] The first insulating sheet (410) may further include a third region (not shown) depending on the region in contact with the semiconductor device. This third region may be a region between the central portion and the outer portion of the semiconductor device, and may be a region with an intermediate repulsive force when the semiconductor device is pressed. The plurality of insulating pillars attached to the first insulating sheet of the third region may be insulating pillars with an intermediate resistance to external pressing force.

[0058] When an external pressure is applied to a semiconductor device under test, each terminal of the semiconductor device is pressed while in contact with each conductive part of the test socket. At this time, the resistance of the insulating pillar refers to the force that resists upwards in response to the downward pressure applied to prevent elastic deformation while preventing downward pressure from the test socket.

[0059] This paper describes a method for measuring the resistance of an insulating column. Generally, when the same load is applied to a high-resistance element and a low-resistance element, the stroke exerted on the high-resistance element and its surrounding elements is smaller than that exerted on the low-resistance element and its surrounding elements. This principle can be used to verify the difference in resistance of an insulating column.

[0060] To explain in detail, it is as follows.

[0061] In the test socket of the prior art, both the central conductive portion and the peripheral conductive portion are supported by insulating portions having the same resistance. In contrast, in the present invention, the central conductive portion is supported by insulating columns having relatively low resistance, and the peripheral conductive portion is supported by insulating columns having relatively high resistance.

[0062] When a test socket of the prior art is pressed with a uniform load, the conductive parts located in the central area of ​​the test socket are pressed by an average of 0.2 mm due to the warpage or repulsive force of the central area of ​​the semiconductor device, while the conductive parts located in the peripheral area are pressed by an average of 0.5 mm. In other words, when the same load is applied to the test socket of the prior art, a difference of approximately 0.3 mm occurs between the average stroke of the conductive parts located in the central area and the average stroke of the conductive parts located in the peripheral area.

[0063] Meanwhile, when the test socket of the present invention is pressed with a uniform load, the conductive parts located in the central region are pressed by an average of 0.3 to 0.4 mm, while the conductive parts located in the peripheral region are pressed by an average of 0.5 mm. That is, when the same load is applied to the test socket of the present invention, the difference between the average stroke of the conductive parts located in the central region and the average stroke of the conductive parts located in the peripheral region is 0.1 to 0.2 mm, which is reduced compared to the prior art.

[0064] That is, even if the present invention is applied, since the outer region of the test socket can expand more freely than the central region, the stroke of the conductive parts located in the central region may be smaller in absolute terms than the stroke of the conductive parts located in the outer region. However, when the present invention is applied, the difference between the stroke of the conductive parts located in the central region and the stroke of the conductive parts located in the outer region is reduced compared to the prior art, and based on this, it is possible to determine whether the test socket is applied with the present invention.

[0065] The central area where the first insulating pillar is installed can be determined according to the pitch, warpage, and area of ​​the semiconductor device, and the first insulating pillar can also be used for a test socket that contacts the LGA (Land Grid Array) area of ​​the dual package.

[0066] The cross-section of the insulating column (440, 450) taken horizontally may be circular, oval, square, or polygonal. The longitudinal cross-section of the insulating column (440, 450) taken vertically may be rectangular or trapezoidal. That is, the shape of the insulating column (440, 450) may be implemented as one of a cylindrical shape, a square column shape, a polygonal column shape, a truncated cone shape, or a polygonal pyramid shape.

[0067] The first insulating column (440) may have a smaller cross-sectional area than the second insulating column (450). The cross-sectional area of ​​the insulating column with medium resistance may be larger than that of the first insulating column and smaller than that of the second insulating column. As a result, the resistance to external pressure of the first insulating column may be lower than that of the second insulating column.

[0068] The area around the conductive member (420) and the insulating pillar (440, 450) may be empty space.

[0069] The test socket may further include a second insulating sheet (510) facing the first insulating sheet (410) and having through holes formed at positions corresponding to pads of the inspection device. The first insulating sheet (410) and the second insulating sheet (510) perform the function of supporting the position of the conductive portion (420), and the outermost portions of the first insulating sheet (410) and the second insulating sheet (510) may be fixed by a frame (not shown). A first insulating pillar (440) and a second insulating pillar (450) may be attached between the first insulating sheet (410) and the second insulating sheet (510) and may be supported by the first insulating sheet (410) and the second insulating sheet (510).

[0070] The material of the first insulating sheet (410) and the second insulating sheet (510) is not particularly limited as long as it has insulation and flexibility, and polyimide, polyethylene, ethylene propylene copolymer, ethylene butene copolymer, ethylene octene copolymer, liquid crystal polymer, or a composite material thereof can be used.

[0071] The conductive portion (420) may have its upper and lower surfaces exposed to the outside through the through-holes of the first insulating sheet (410) and the second insulating sheet (510). The conductive portion (420) is formed by densely packing a plurality of conductive particles (421) within an elastic insulating material and may be integrally bonded with the first insulating sheet (410). A polymer material having a cross-linked structure may be used as the elastic insulating material. As polymer materials, for example, conjugated diene rubbers such as polybutadiene rubber, natural rubber, polyisoprene rubber, styrene-butadiene copolymer rubber, and acrylonitrile-butadiene copolymer rubber and hydrogenated products thereof, block copolymer rubbers such as styrene-butadiene-diene block copolymer rubber and styrene-isoprene block copolymer and hydrogenated products thereof, chloroprene rubber, urethane rubber, polyester rubber, epichlorohydrin rubber, silicone rubber, ethylene-propylene copolymer rubber, ethylene-propylene-diene copolymer rubber, and the like can be used, and silicone rubber can be preferably used.

[0072] The conductive particles (421) in the conductive portion (420) can be made of a magnetic material. Examples of the conductive particles include particles of a magnetic metal such as iron, cobalt, or nickel, or particles of an alloy thereof, or particles containing these metals, or particles using these particles as core particles and plating the surface of the core particles with a metal having good conductivity such as gold, silver, palladium, or rhodium, or non-magnetic particles or inorganic particles such as glass beads, or polymer particles as core particles and plating the surface of the core particles with a conductive magnetic metal such as nickel or cobalt. The conductive particles are illustrated as having a spherical shape, but particles of various shapes including openings and contact portions can be used to increase the bonding force between the conductive particles.

[0073] Figure 6 is a cross-sectional side view of a test socket according to a second embodiment of the present invention.

[0074] The test socket includes a plurality of insulating pillars (610, 620) attached to a first insulating sheet (410) and a second insulating sheet (510) and supported by the first insulating sheet (410) and the second insulating sheet (510). The plurality of insulating pillars may be the first insulating pillar (610) or the second insulating pillar (620). The first insulating pillar (610) may have a relatively smaller resistance to an external pressing force than the second insulating pillar (620). A cross-sectional area of ​​the first insulating pillar (610) may be smaller than a cross-sectional area of ​​the second insulating pillar (620). In addition, a shape of a longitudinal section of at least one of the first insulating pillar (610) and the second insulating pillar (620) may be a trapezoid whose width gradually changes from the top to the bottom. In this case, the shape of at least one of the first insulating pillar (610) and the second insulating pillar (620) can be implemented as at least one of a truncated cone shape and a polygonal pyramid shape.

[0075] Figure 7 is a cross-sectional side view of a test socket according to a third embodiment of the present invention.

[0076] The test socket includes a plurality of insulating posts (710, 720) that are directly attached to a first insulating sheet (410) and attached to a second insulating sheet (510) via a support (730).

[0077] The plurality of insulating pillars may be first insulating pillars (710) or second insulating pillars (720). The first insulating pillar (710) may have a relatively smaller resistance to external pressure than the second insulating pillar (720). The cross-sectional area of ​​the cross-section of the first insulating pillar (710) may be smaller than the cross-sectional area of ​​the cross-section of the second insulating pillar (720). At least one of the first insulating pillar (710) and the second insulating pillar (720) may be attached to the second insulating sheet (730) via a support (730).

[0078] The support (730) can be implemented with a material having a different hardness from that of the insulating pillars (710, 720), and the support (730) can be implemented in one of the shapes of a cylinder, a square column, a hemisphere, a polygonal column, a truncated cone, and a polygonal pyramid. By adding a support (730) having a different hardness from that of the insulating pillars (710, 720) to the lower portion of the insulating pillars (710, 720), the resistance to external pressure of the insulating pillars (710, 720) can be more precisely controlled.

[0079] Figure 8 is a cross-sectional side view of a test socket according to a fourth embodiment of the present invention.

[0080] The test socket includes a first insulating pillar (810) attached to a first insulating sheet (410) and spaced apart from a second insulating sheet (510), and a second insulating pillar (820) attached and supported between the first insulating sheet (410) and the second insulating sheet (510). The first insulating pillar (810) may have a relatively smaller resistance to external pressing force than the second insulating pillar (820). The cross-sectional area of ​​the cross-section of the first insulating pillar (810) may be the same as the cross-sectional area of ​​the cross-section of the second insulating pillar (820), or the cross-sectional area of ​​the cross-section of the first insulating pillar (810) may be smaller than the cross-sectional area of ​​the cross-section of the second insulating pillar (820). That is, a height difference may be formed between the first insulating pillar (810) and the second insulating pillar (820), and the resistance may be varied according to the external pressing force.

[0081] Figure 9 is a cross-sectional side view of a test socket according to a fifth embodiment of the present invention.

[0082] The test socket is configured to include a first insulating pillar (910) attached to a first insulating sheet (410) and spaced apart from a second insulating sheet (510), a second insulating pillar (920) attached to the first insulating sheet (410) and spaced apart from the second insulating sheet (510), a first support (930) mounted on the lower end of the first insulating pillar (910), and a second support (940) mounted on the lower end of the second insulating pillar (920) and attached to the second insulating sheet (510). In the case of the test socket of Fig. 9, the second insulating pillar (920) and the first insulating pillar (910) are configured to have the same height, but the heights of the supports (930, 940) mounted on the lower ends of each insulating pillar (910, 920) are different so that the resistance varies according to the external pressing force.

[0083] The first support (930) and the second support (940) can be implemented with a material different from the hardness of the insulating pillars (910, 920), and each support can be implemented in one of the shapes of a cylinder, a square pillar, a hemisphere, a polygonal pillar, a cone, and a polygonal pyramid.

[0084] FIG. 10 is a drawing illustrating a manufacturing process of a test socket according to a first embodiment of the present invention.

[0085] First, as shown in (a), a first layer (411) of a first insulating sheet having a through hole formed at a position corresponding to a conductive portion (420) is positioned between conductive portion molds (not shown), and a mixture of an elastic insulating material and conductive particles for forming a conductive portion (420) is filled in the conductive portion mold, and a magnetic force is generated so that the conductive particles are densely packed to form a conductive portion (420).

[0086] Next, as shown in (b), a second layer (412) of a first insulating sheet having a through hole formed at a position corresponding to a conductive part is positioned between insulating pillar molds (not shown), and a first insulating pillar (440) and a second insulating pillar (450) attached to the second layer (412) of the first insulating sheet are formed. At this time, a support may be additionally formed at the bottom of each insulating pillar.

[0087] Next, as shown in (c), a second layer (412) of a first insulating sheet having an insulating pillar formed thereon is joined to the lower portion of a first layer (411) of a first insulating sheet having a conductive portion (420) formed thereon, and at this time, the conductive portion (420) is fitted into a through hole formed in the second layer (412). In this way, the first layer (411) and the second layer (412) can be joined to form a first insulating sheet.

[0088] Fig. 11 is a diagram analyzing the electrical resistance value of the conductive portion when testing a large-area semiconductor device using the test socket of the present invention. Compared to Fig. 3, it can be confirmed that the electrical resistance value of the conductive portion of the test socket located in the center of the semiconductor device is drastically reduced to 50 mOhm or less (in the case of Fig. 3, it exceeds 250 mOhm). Through this, it can be seen that when testing a large-area semiconductor device using the test socket of the present invention, smooth contact is made between the semiconductor device and the test socket not only at the outer portion of the semiconductor device but also at the center.

[0089] The above description is provided for illustrative purposes only, and those skilled in the art will readily appreciate that the present invention can be readily modified into other specific forms without altering the technical spirit or essential characteristics of the present invention. Therefore, the embodiments described above should be understood as illustrative in all respects and not restrictive. For example, each component described as integral may be implemented as separate components, and similarly, components described as integral may be implemented as integral components.

[0090] The scope of the present invention is indicated by the claims described below rather than the detailed description above, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be interpreted as being included in the scope of the present invention.

Claims

1. A test socket positioned between a semiconductor device and a test device to conduct electricity between a terminal of the semiconductor device and a pad of the test device. A first insulating sheet having a through hole formed at each position corresponding to a terminal of the semiconductor device and divided into a first region and a second region according to an area in contact with the semiconductor device, A second insulating sheet facing the first insulating sheet and having through holes formed at each position corresponding to the pads of the inspection device; A plurality of conductive parts formed by extending vertically between the through-holes of the first insulating sheet and the through-holes of the second insulating sheet, A first insulating pillar is attached to the first region of the first insulating sheet and is spaced apart from each other between the plurality of conductive parts, A second insulating pillar is attached to the second region of the first insulating sheet and is spaced apart from each other between the plurality of conductive parts, and has a relatively greater resistance to external pressure than the first insulating pillar. Test socket.

2. In paragraph 1, The first region is determined by at least one of the pitch, warpage and area of ​​the semiconductor device. Test socket.

3. In the second paragraph, the first region is a region in contact with the central portion of the semiconductor device, and the second region is a region in contact with the outer portion of the semiconductor device. Test socket.

4. In paragraph 1, The above first insulating column and the above second insulating column are each one of a cylindrical shape, a square column shape, a polygonal column shape, a truncated cone shape, and a polygonal pyramid shape. Test socket.

5. In paragraph 1, The cross-sectional area of ​​the cross-section of the first insulating column is smaller than the cross-sectional area of ​​the cross-section of the second insulating column. Test socket.

6. In paragraph 5, The first insulating pillar and the second insulating pillar are respectively attached and supported between the first insulating sheet and the second insulating sheet. Test Socket 7. In paragraph 1, The first insulating pillar has one end attached to the first region of the first insulating sheet and the other end spaced from the second insulating sheet. Test socket.

8. In paragraph 5 or 7, The above first insulating column further includes a support having a hardness different from that of the first insulating column. Test socket.

9. In paragraph 8, The above first insulating pillar is in contact with the second insulating sheet via the support. Test socket.

10. In paragraph 8, The above support is one of a cylindrical shape, a square column shape, a hemispherical shape, a polygonal column shape, a cone shape, or a polygonal pyramid shape. Test socket.

11. In paragraph 5 or 7, The second insulating column further includes a support having a hardness different from that of the second insulating column. Test socket.

12. In paragraph 11, The second insulating pillar is attached to the second insulating sheet via the support. Test socket.

13. In paragraph 11, The above support is one of a cylindrical shape, a square column shape, a hemispherical shape, a polygonal column shape, a cone shape, or a polygonal pyramid shape. Test socket.

14. In paragraph 1, The conductive portion includes a plurality of conductive particles distributed within an elastic insulating material, with the upper and lower surfaces of the conductive portion being directed to the outside through the through-holes of the first insulating sheet and the second insulating sheet. Test socket.

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