Adhesive film for semiconductors

Abstract

The present invention provides an adhesive film for semiconductors comprising: a base layer comprising a polyester-based compound; a conductive layer disposed on the base layer; and an adhesive layer disposed on the conductive layer.

Description

Semiconductor adhesive film

[0001] The present invention relates to a semiconductor adhesive film and a method for manufacturing the same.

[0002] Recently, there has been a growing demand for thinner and smaller semiconductor devices and their packaging. Consequently, as semiconductor wafers become thinner, electrostatic chucks (ESCs) are increasingly utilized to effectively secure them. An ESC is a device used to secure wafers during semiconductor manufacturing processes. It uses electrical force to secure the wafer. Unlike conventional methods such as physical clamps or vacuum suction, it minimizes contact damage and provides consistent holding force.

[0003] In particular, wafer fixation technology utilizing electrostatic chucks is effective in minimizing physical damage and providing consistent holding force. In these ESC systems, adhesive films are used to secure semiconductor wafers, protecting the wafer surface and preventing damage that may occur during the process.

[0004] The adhesive film used in this process is generally designed with a multilayer structure. This film must minimize the formation of burrs and bubbles that can occur during the semiconductor process and be cleanly removed without residue after the wafer's precision machining is complete. Various research is underway to maintain these functions while ensuring wafer adhesion to the electrostatic chuck and protecting the wafer from deterioration caused by the voltage generated by the electrostatic chuck.

[0005] Recently, as wafer thicknesses have decreased to less than 100 μm, film adhesion has become increasingly important. This is especially crucial for reducing wafer damage that can occur during the process. These films are designed to take into account wafer surface irregularities and enhance their durability against external stresses, preventing wafer breakage. Furthermore, semiconductor adhesive films must maintain stable performance under various environmental conditions and operate without deformation at both high and low temperatures. To achieve this, the films must possess excellent mechanical properties, including electrical insulation, water resistance, and heat resistance.

[0006] [Prior Art Literature]

[0007] [Patent Document]

[0008] KR 10-2208071 B1

[0009]

[0010] The problem to be solved by the present invention is to provide a semiconductor adhesive film.

[0011] In order to solve the above problem, the present invention provides a semiconductor adhesive film including a base layer including a polyester compound, a conductive layer formed on the base layer, and an adhesive layer formed on the conductive layer.

[0012] A semiconductor adhesive film according to one embodiment of the present invention can be adsorbed to an electrostatic chuck by an electrostatic chuck and electrostatic attraction.

[0013] FIG. 1 is a cross-sectional view of a semiconductor adhesive film according to one embodiment of the present invention.

[0014] Figure 2 is a measurement photograph taken during the measurement of Experimental Example 3.

[0015] Hereinafter, various embodiments of the present invention will be described with reference to the accompanying drawings. It should be understood that the present invention is not limited to specific embodiments, but rather encompasses various modifications, equivalents, and / or alternatives of the embodiments of the present invention. In the description of the drawings, similar reference numerals may be used for similar components.

[0016] In this document, the expressions “has”, “may have”, “includes”, or “may include” indicate the presence of a feature (e.g., a number, function, operation, or component such as a part), but do not exclude the presence of additional features.

[0017] In this document, the expressions "A or B," "at least one of A and / or B," or "one or more of A and / or B" can include all possible combinations of the listed items. For example, "A or B," "at least one of A and B," or "at least one of A or B" can all refer to cases where (1) at least one A is included, (2) at least one B is included, or (3) at least one A and at least one B are included.

[0018] The expression "configured to" as used herein can be used interchangeably with, for example, "suitable for", "having the capacity to", "designed to", "adapted to", "made to", or "capable of". The term "configured to" does not necessarily mean "specifically designed to".

[0019] The terms used in this document are used only to describe specific embodiments and may not be intended to limit the scope of other embodiments. The singular expression may include the plural expression unless the context clearly indicates otherwise. Terms used herein, including technical or scientific terms, may have the same meaning as commonly understood by those of ordinary skill in the art described in this document. Terms defined in general dictionaries among the terms used in this document may be interpreted as having the same or similar meaning in the context of the relevant technology, and shall not be interpreted in an idealized or overly formal sense unless explicitly defined in this document. In some cases, even if a term is defined in this document, it cannot be interpreted to exclude the embodiments of this document.

[0020] The embodiments disclosed in this document are presented for the purpose of explaining and understanding the disclosed technical content and are not intended to limit the scope of the present invention. Therefore, the scope of this document should be interpreted to include all modifications or various other embodiments based on the technical concept of the present invention.

[0021] Hereinafter, preferred embodiments of the present invention will be described in detail. Prior to this, it should be noted that the terms and words used in this specification and claims should not be construed as limited to their conventional or dictionary meanings. Based on the principle that the inventor can appropriately define the concept of a term to best explain his or her invention, they should be interpreted in a way that aligns with the technical spirit of the present invention.

[0022] Accordingly, the configurations of the embodiments described in this specification are only some of the most preferred embodiments of the present invention and do not represent all of the technical ideas of the present invention, so it should be understood that there may be various equivalents and modified examples that can replace them at the time of filing this application.

[0023] Throughout the specification, whenever a part is said to "include" a component, this does not mean that it excludes other components, but rather that it may include other components, unless otherwise stated.

[0024] Hereinafter, the present invention will be described in detail.

[0025] Hereinafter, the present invention will be described in more detail through examples. These examples are intended solely to illustrate the present invention more specifically, and it will be apparent to those skilled in the art that the scope of the present invention is not limited by these examples, in accordance with the gist of the present invention.

[0026] In this specification, "electrostatic chuck" refers to an Electrostatic Chuck (ESC), a device used to hold wafers or films (process tapes) in the semiconductor manufacturing process. This device can prevent various problems that may occur during the process by holding the wafer using static electricity instead of physical methods. The electrostatic chuck uses the principle of holding the wafer using electrostatic force. This method generates electrostatic suction force by applying voltage between the wafer and the electrostatic chuck. Electrostatic chucks are generally designed with a monopolar or bipolar structure, and each structure can be distinguished by the number of electrodes.

[0027] In this specification, “electrostatic chucking and reaction” refers to the phenomenon in which, when a semiconductor adhesive film described below is positioned near an electrostatic chuck and voltage is applied to the electrostatic chuck, mutual static electricity is generated between the semiconductor adhesive film and the electrostatic chuck, and the electrostatic chuck and the semiconductor adhesive film can be adsorbed (chucked) by electrostatic attraction.

[0028] Semiconductor adhesive film

[0029] A semiconductor adhesive film according to one embodiment of the present invention with reference to FIG. 1 may include a base layer (10) including a polyester compound, a conductive layer (20) formed on the base layer, and an adhesive layer (30) formed on the conductive layer.

[0030] In addition, a semiconductor adhesive film according to another embodiment of the present invention may additionally include a release film formed on the adhesive layer.

[0031] A semiconductor adhesive film according to one embodiment of the present invention is formed by sequentially laminating a base layer, a conductive layer, and an adhesive layer. In addition, the semiconductor adhesive film of the present invention may additionally include a release film formed on the adhesive layer.

[0032] The adhesive film can be used during a semiconductor process, for example, to mutually adhere a wafer and an adhesive layer of the semiconductor adhesive film, and a base layer present on the other side of the adhesive layer can be placed on the electrostatic chuck side and react with the electrostatic chuck so that the wafer can be easily adsorbed to the electrostatic chuck without damage to the wafer due to static electricity generated in the electrostatic chuck.

[0033] In a semiconductor adhesive film according to one embodiment of the present invention, the adhesive layer can be adsorbed to the entire semiconductor wafer within 1.0 sec from the time when the center of the semiconductor adhesive film is pressed and the adhesive layer comes into contact with the semiconductor wafer.

[0034] When a voltage of 1 kV is applied to a semiconductor adhesive film according to one embodiment of the present invention, the surface resistance is 1 Х 10 11 1 Х 10 13 It can be Ω / sq. If it is less than the above range, the dielectric loss increases and the wafer with the semiconductor adhesive film adhered may not be fixed to the electrostatic chuck. Conversely, if it exceeds the above range, the dielectric loss decreases but the mobility of electrons decreases and the wafer with the semiconductor adhesive film adhered may not be fixed to the electrostatic chuck.

[0035] The present invention is characterized in that it can react with an electrostatic chuck by precisely controlling the electrical properties such as surface resistance, dielectric loss or dielectric constant of each layer and a semiconductor adhesive film combining them.

[0036] The dielectric loss of the semiconductor adhesive film may be 0.02 to 0.1 at 25°C and 10 GHz. If it is less than the above range, the mobility of electrons decreases, which prevents an environment in which electrostatic force can be generated, and thus a reaction with the electrostatic chuck may not occur. Conversely, if it exceeds the above range, the mobility of electrons increases, which increases the loss of negative charge, and thus a reaction with the electrostatic chuck may not occur.

[0037] In addition, the dielectric constant of the semiconductor adhesive film may be 2.8 to 3.3 under conditions of 25°C and 10 GHz. If it is below the above range, the dielectric constant may be low and a reaction with the electrostatic chuck may not occur. Conversely, if it exceeds the above range, the dielectric constant may be high and electron mobility may not be secured, so a reaction with the electrostatic chuck may not occur.

[0038] The semiconductor adhesive film may have a horizontal pulling force of 100 gf / 150 mm to 500 gf / 150 mm when a voltage of 3 kV is applied to the electrostatic chuck and the adhesive film and the electrostatic chuck react and are mutually attracted. If it is less than the above range, when the wafer is later bonded to the semiconductor adhesive film and reacts with the electrostatic chuck, the wafer may be detached from the electrostatic chuck due to the weight of the wafer. If it is more than the above range, the suction force may be too high, which may cause problems when transporting the semiconductor adhesive film and the wafer from the electrostatic chuck after they are bonded.

[0039] Below, each component that constitutes the semiconductor adhesive film is described in detail.

[0040] According to one embodiment of the present invention, the base layer may include a polyester compound.

[0041] The above polyester compound may include polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polycyclohexylene dimethylene terephthalate (PCDT), and polycaprolactone (PCL), and preferably, polyethylene terephthalate (PET) may be used.

[0042] The above polyethylene terephthalate is a polymer resin and has excellent mechanical properties, electrical properties, chemical resistance, dimensional stability, etc., and is widely used in the field of electronic materials such as base materials, information recording materials, heat-resistant films for capacitors, packaging, plate making, or insulating films, etc., and is particularly widely used for films.

[0043] The polyethylene terephthalate (PET) used in the present invention is a polymer resin that can be manufactured by condensation polymerization through transesterification from dimethyl terephthalate (DMT) and ethylene glycol (EG), but various known products can also be used.

[0044] The above surface roughness is an index representing the roughness of the film surface, and is a numerical representation of the fine unevenness or irregularity of the surface. The surface roughness according to one embodiment of the present invention can be expressed as a value of Ra (center line average roughness) or Rz (10-point average roughness). Ra represents the average roughness of the surface, and Rz is a value obtained by measuring the difference between the highest and lowest points of the surface and averaging them. The above average roughness can be measured using a model such as Kosaka's SE3300, for example.

[0045] In view of the above, the base layer according to one embodiment of the present invention may have a surface roughness Ra value of 55 nm to 70 nm on the base layer side exposed to the outside in the semiconductor adhesive film, more preferably, the Ra value may be 58 nm to 69 nm. The Rz value may be 1.20 nm to 1.80 nm, more preferably, 1.30 nm to 1.50 nm. By being within the above range, when static electricity is applied from the electrostatic chuck, the PET layer arranged toward the electrostatic chuck can react with the electrostatic chuck. If it is outside the above range, the semiconductor adhesive film according to one embodiment of the present invention may not be within the limited range of dielectric loss and dielectric constant values ​​that can react with the electrostatic chuck, so the reaction with the electrostatic chuck may be insufficient or impossible. It is presumed that this is because the change in the surface roughness of the PET layer affects the movement of charges due to the voltage applied from the electrostatic chuck.

[0046] To control the surface roughness, the base layer may undergo additional surface treatment. Specifically, the surface roughness of the base layer may be controlled through corona discharge treatment, plasma treatment, chemical treatment, primer treatment, or the addition of a slip agent or filler.

[0047] The thickness of the above base layer may be 25 to 100 μm, 33 to 70 μm, or 38 to 50 μm. By adjusting the thickness within the above range, the transparency of the semiconductor adhesive film can be secured, while the durability of the entire semiconductor adhesive film can be secured.

[0048] If the thickness of the base layer is less than the above range, wrinkles may occur due to shrinkage during the heat process during coating, resulting in an unsightly appearance. Conversely, if the thickness exceeds the above range, the dielectric loss may be low, resulting in a failure to react with the electrostatic chuck.

[0049] According to one embodiment of the present invention, the conductive layer is formed on a base layer and may include a conductive polymer compound to ensure conductivity of the semiconductor adhesive film.

[0050] The above conductive polymer compound may include at least one selected from the group consisting of poly(3,4-ethylenedioxythiophene)(PEDOT)poly(3,4-ethylenedioxythiophene) : polystyrenesulfonic acid (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), poly(3-hexylthiophene)(P3HT) and poly(paraphenylene vinylene)(PPV), and preferably may include poly(3,4-ethylenedioxythiophene)(PEDOT)poly(3,4-ethylenedioxythiophene) : polystyrenesulfonic acid (PEDOT:PSS).

[0051] The above PEDOT:PSS is a type of conductive polymer that exhibits high conductivity among plastic materials, excellent transmittance in the visible light range, and is water-soluble, enabling environmentally friendly solution processing and exhibiting excellent stability. Therefore, by applying it to a semiconductor adhesive film according to an embodiment of the present invention, transparency of the entire semiconductor adhesive film can be secured.

[0052] Since PEDOT is a conductive material, but PSS is a non-conductive material, it is desirable to improve electrical conductivity by leaving only the minimum amount of PSS necessary to maintain the PEDOT:PSS structure. From the above viewpoint, the molar ratio of PEDOT and PSS may be 1.5 to 2.3:1. By being included within the above range, a conductive layer can be easily formed on the base layer while ensuring high conductivity.

[0053] The conductive layer may be formed by crosslinking a mixture of PEDOT:PSS and water-dispersible polyurethane with a cyclic amine compound. This is to ensure compatibility with the adhesive layer described below, and because, when forming the adhesive layer on the conductive layer, a portion of the conductive layer may be removed by a solvent that dissolves the materials constituting the adhesive layer. To prevent this, it is necessary to improve the solvent resistance of the conductive layer, and in the present invention, this is achieved by crosslinking with a cyclic amine compound.

[0054] Here, the cyclic amine compound may include at least one selected from the group consisting of aziridine, azetidine, pyrrolidine, piperidine, azepane, and azocane, and preferably may include aziridine.

[0055] The cyclic amine compound may be included in an amount of 0.05 to 0.5 wt% relative to the total 100 wt% of the conductive layer. If the cyclic amine compound is included in an amount less than the above range, it may be difficult to secure solvent resistance from the ketone solvent used in forming the adhesive layer after forming the conductive layer. If the cyclic amine compound is included in an amount exceeding the above range, the surface resistance of the conductive layer may become too high, so that the final film may not react with the electrostatic chuck.

[0056] The weight ratio of the polyurethane to the PEDOT:PSS of the above conductive layer may be 1:9, 1.5:8.5, or 3:7. If the PEDOT:PSS content is less than the above range, the surface resistance, dielectric loss, and dielectric constant conditions that can function as a semiconductor adhesive film cannot be satisfied. On the other hand, if the PEDOT:PSS content exceeds the above range, the physical properties can be satisfied, but since the polyurethane is insufficient to sufficiently crosslink with the cyclic amine compound crosslinking agent, not only is the solvent resistance not secured, but it is also not desirable from an economical perspective.

[0057] The weight ratio of the cyclic amine compound to the total weight of the PEDOT:PSS and water-dispersed polyurethane mixture of the above-mentioned conductive layer may be 100:8 to 63, 100:10 to 63, or 100:12 to 63. If the weight ratio of the cyclic amine compound is less than the above range, the carboxyl group of the water-dispersed polyurethane is not sufficiently crosslinked, and thus solvent resistance is not secured. Conversely, if the weight ratio exceeds the above range, unreacted cyclic amine compound may migrate to the surface depending on time and temperature, which is economically undesirable.

[0058] In addition, the PEDOT:PSS and water-dispersed polyurethane mixture of the above-described conductive layer may be a solution dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof.

[0059] The above solution may additionally contain a stabilizer selected from the group consisting of ethylene glycol, sorbitol and mixtures thereof.

[0060] The concentration of the PEDOT:PSS and polyurethane mixture dissolved in a solvent selected from the group consisting of water, ethanol, methanol, isopropyl alcohol, and mixtures thereof may be 0.8 to 1.2 wt% or 0.8 to 0.9 wt%. If the concentration of the solution is less than the above range, PEDOT:PSS particles may come out to the surface, which may cause coating streaks on the coating surface. Conversely, if the concentration exceeds the above range, the solid content may decrease, which may increase the wet thickness, and the surface may become uneven due to the fluidity of the coating solution on the coating surface.

[0061] The thickness of the conductive layer may be 0.03 to 3 μm. If the thickness of the conductive layer is less than the above range, the surface resistance may be high and the dielectric loss may be low, so that the wafer with the semiconductor adhesive film adhered thereto may not be fixed to the electrostatic chuck. If the thickness of the conductive layer exceeds the above range, the surface resistance may be low and the dielectric loss may be high, so that the wafer with the semiconductor adhesive film adhered thereto may not react with the electrostatic chuck.

[0062] According to one embodiment of the present invention, the adhesive layer is formed on the conductive layer, and in order to secure the adhesiveness of the semiconductor adhesive film, the adhesive layer may include at least one selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound, and preferably may include a silicone compound.

[0063] The above silicone compound may be derived from a constituent unit of an organopolysiloxane of the chemical formula 1 below or a derivative thereof and a hydrogen siloxane copolymer of the chemical formula 2 below or a derivative thereof.

[0064] [Chemical Formula 1]

[0065]

[0066] Here, R1 and R8 are each independently one selected from the group consisting of hydrogen, alkyl and alkenyl, R2 to R7 are either hydrogen or alkyl, and n1 may be an integer of 5 to 200,000, preferably an integer of 500 to 100,000, and more preferably an integer of 1,000 to 50,000.

[0067]

[0068] [Chemical Formula 2]

[0069]

[0070] Here, the above R9 to R 18 At least one of them is hydrogen, and R9 to R 18 at Except for the hydrogen moiety, the remainder are each independently alkyl, wherein n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.

[0071] Preferably, the organopolysiloxane of the above chemical formula 1 or a derivative thereof is a polydimethylsiloxane containing vinyl groups at both terminals, and has a weight average molecular weight of 600,000 to 700,000, a number average molecular weight of 300,000 to 400,000, and the vinyl group content may be 0.02 to 0.2 mmol / g, 0.1 to 0.2 mmol / g, or 0.15 to 0.2 mmol / g. If the vinyl group content is less than the above range, it may not be sufficiently crosslinked with Si-H, so that the dielectric loss value increases and thus the electrostatic chuck may not react. On the contrary, if it exceeds the above range, the crosslinking density with Si-H increases, so that the dielectric loss value decreases and thus the electrostatic chuck may not react.

[0072] Preferably, the hydrogen siloxane copolymer of the above chemical formula 2 or a derivative thereof may have 1 to 2 hydrogen groups (-H) substituted with alkyl groups having 1 to 2 carbon atoms. More preferably, the hydrogen siloxane copolymer of the above chemical formula 2 may be an alkylhydrosiloxane-dialkylsiloxane copolymer, and more preferably, it may be a methylhydrosiloxane-dimethylsiloxane copolymer, and the R 12 is hydrogen and the rest are R9 to R 11 and R 13 Inland R 19 The weight average molecular weight (Mw) of the hydrogen siloxane copolymer of the above chemical formula 2 may be 1,000 to 10,000, and more preferably 1,500 to 4,000.

[0073] And, the Si-H content of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 4 to 16 mmol / g, 4 to 10 mmol / g or 4 to 5 mmol / g. If the Si-H content is less than the above range, the vinyl group included in the organopolysiloxane of the above chemical formula 1 or its derivative may not be sufficiently crosslinked, which may increase the dielectric loss. On the other hand, if the Si-H content exceeds the above range, unreacted Si-H groups may be generated and migrate to the surface of the adhesive layer.

[0074] The above silicone compound preferably uses platinum as a catalyst when reacting the compound of the above chemical formula 1 and the compound of the above chemical formula 2. In addition, the present invention may apply an addition reaction (curing) step, particularly to increase crosslinking density and lower dielectric constant.

[0075] The molar ratio of the vinyl group contained in the organopolysiloxane of the above chemical formula 1 or its derivative and the Si-H group of the hydrogen siloxane copolymer of the above chemical formula 2 or its derivative may be 1:1 to 3.

[0076] If the molar ratio exceeds the above-mentioned range, the crosslinking density increases, but an out-gassing phenomenon occurs due to hydrogen gas generated when the Si-H that has not reacted with vinyl increases, and conversely, if it is below the above range, the number of crosslinking points with vinyl decreases, so the crosslinking density and dielectric constant decrease, and the dielectric loss increases, making it difficult to react to electrostatic chucking.

[0077] The above-mentioned adhesive layer may be a pressure-sensitive adhesive layer. In addition to the organopolysiloxane of the above-mentioned chemical formula 1 or a derivative thereof and the hydrogen siloxane copolymer of the above-mentioned chemical formula 2 or a derivative thereof, an additional component may be included to improve the physical properties of the pressure-sensitive adhesive layer.

[0078] Additional components include silicone gum or MQ resin. The adhesive layer can adhere to sensitive areas such as wafers or organic film layers, and has good adhesive strength and maintains a predetermined crosslinking density, so that the adhesive properties of the product can be maintained even after a certain period of time.

[0079] The crosslinking density of the above adhesive layer is 0.15 mol / cm 3 0.5 mol / cm 3 It may be. If the crosslinking density of the adhesive layer exceeds the above numerical range, the contact area of ​​the surface may decrease, which may reduce the adhesive force. If the crosslinking density of the adhesive layer is less than the above numerical range, excessive adhesiveness may cause residue or residue to remain when the adhesive layer is peeled off from the wafer, which may contaminate the semiconductor process.

[0080] In the semiconductor adhesive film according to one embodiment of the present invention, the thickness of the adhesive layer may be 15 to 50 μm, 15 to 35 μm, or 15 to 25 μm. If the thickness of the adhesive layer is less than the above range, the dielectric loss increases, so that the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck. Conversely, if the thickness of the adhesive layer exceeds the above range, the dielectric loss decreases, so that the wafer to which the semiconductor adhesive film is adhered may not be fixed to the electrostatic chuck. In addition, if the thickness of the adhesive layer exceeds the above range, the probability of burrs occurring when cutting the semiconductor adhesive film increases.

[0081] In addition, the thickness of the adhesive layer may be formed to be 50% or less of the overall thickness of the semiconductor adhesive film. If the thickness of the adhesive layer exceeds the above range, the flexibility of the adhesive layer increases the overall flexibility of the semiconductor adhesive film, thereby weakening the stiffness of the film, and thus increasing the probability of bubbles forming when the semiconductor adhesive film is adhered to a wafer.

[0082]

[0083] Manufacturing method of semiconductor adhesive film

[0084] According to one embodiment of the present invention, a semiconductor adhesive film may be prepared by preparing a base layer with controlled surface roughness and gravure coating the conductive layer on the base layer. The conductive layer may be dried with hot air at 60 to 100°C or 20 to 35 Hz for 30 to 90 seconds. If the drying time or temperature is below the above range, drying may be insufficient, resulting in incomplete curing or solvent volatilization, which may affect electrical properties such as dielectric constant.

[0085] The above adhesive layer can be slot die coated or comma coated on the conductive layer. The above adhesive layer can be dried with hot air at 60 to 150°C or 30 to 35 Hz for 90 to 180 seconds. If the drying time or drying temperature is below the above range, drying is insufficient, and curing or solvent volatilization is not completely achieved, which may affect electrical properties such as dielectric constant.

[0086] Optionally, a release film can be additionally laminated on the adhesive layer.

[0087] Hereinafter, the present invention will be described in detail with examples to specifically illustrate it. However, the examples according to the present invention may be modified in various ways, and the scope of the present invention should not be construed as being limited to the examples described below. These examples are provided to more fully explain the present invention to those of average skill in the art.

[0088]

[0089] Examples and Comparative Examples

[0090] Example 1

[0091] Manufacturing of the base layer:

[0092] To control surface roughness, a PET film containing 0.8 wt% of spherical silica particles (solid content 20 wt%) coated with a metal compound (alumina) to a thickness of 0.1 μm was prepared as a base layer based on the total weight of the film. The thickness of the PET film as a base layer was 50 μm.

[0093] Manufacturing of the challenge layer:

[0094] A conductive layer was formed on the PET film. A 0.8 wt% aqueous solution (wt% of the mixture based on 100 wt% of the aqueous solution) of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT-PSS) and a water-dispersed polyurethane (PEDOT-PSS: polyurethane = 1:9 weight ratio) was crosslinked with 0.35 wt% of aziridine (wt% of aziridine based on 100 wt% of the conductive layer) at room temperature and pressure for 45 minutes, and the resulting reaction product was gravure-coated on the PET, and dried with a 35 Hz hot air at 60°C for 20 seconds, 80°C for 20 seconds, and 100°C for 20 seconds to form a conductive layer having a thickness of 0.2 μm. The molar ratio of PEDOT:PSS was 1.8:1.

[0095] Manufacturing of the adhesive layer:

[0096] An adhesive layer was formed on the surface on which the conductive layer was formed. 27 g of polydimethylsiloxane (weight average molecular weight of about 650,000) of chemical formula 1 containing vinyl groups at both ends in a content of 0.2 mmol / g and 2.3 g of methylhydrosiloxane-dimethylsiloxane copolymer (weight average molecular weight of about 2,500) of chemical formula 2 having a Si-H content of 4 mmol / g were mixed in 70 g of toluene, and 0.005 g of platinum was added thereto as a catalyst, and the mixture was reacted at room temperature and pressure for 200 minutes. The product was slot die-coated on the conductive layer, and dried with hot air at 35 Hz at 60°C for 50 seconds, 110°C for 50 seconds, and 150°C for 50 seconds to form an adhesive layer having a thickness of 20 μm.

[0097]

[0098] Examples 2 to 15 and Comparative Examples 1 to 4

[0099] Semiconductor adhesive films of Examples and Comparative Examples were manufactured using the same manufacturing method as Example 1, but with some components changed as shown in Table 1 below. Surface roughness was controlled by adjusting the silica content included in the PET film. For example, in Example 3, the silica gel content was 1 wt% relative to 100 wt% of the PET film.

[0100] Note [Base layer] Main ingredient / Thickness (㎛) [Conductive layer] Main ingredient / Thickness (㎛) [Adhesive layer] Main ingredient / Thickness (㎛) [Base layer] Surface roughness (Ra, nm) [Adhesive layer] Si-H / Vinyl mole ratio [Conductive layer] Aziridine content (wt%) Example 1 PET / 50P.P / 0.2Si-PSA / 2050 1.7 0.35 Example 2 PET / 50P.P / 0.2Si-PSA / 2058 1.7 0.35 Example 3 PET / 50P.P / 0.2Si-PSA / 2060 1.7 0.35 Example 4 PET / 50P.P / 0.2Si-PSA / 2069 1.7 0.35 Example 5 PET / 50P.P / 0.2Si-PSA / 20751.70.35Example 6PET / 50P.P / 0.2Si-PSA / 20600.50.35Example 7PET / 50P.P / 0.2Si-PSA / 20601.00.35Example 8PET / 50P.P / 0.2Si-PSA / 20601.70.35Example 9PET / 50P.P / 0.2Si-PSA / 20603.00.35Example 10PET / 50P.P / 0.2Si-PSA / 20604.00.35Example 11PET / 50P.P / 0.2Si-PSA / 20601.70.03Example 12PET / 50P.P / 0.2Si-PSA / 20601.70.05Example 13PET / 50P.P / 0.2Si-PSA / 20601.70.35Example 14PET / 50P.P / 0.2Si-PSA / 20601.70.50Example 15PET / 50P.P / 0.2Si-PSA / 20601.70.55Comparative Example 1PET / 50P.P / 0.2Si-PSA / 20601.7-Comparative Example 2PET / 50P.P / 0.2-60-0.35Comparative Example 3PET / 50-Si-PSA / 20601.7-*PP: Molar ratio of PEDOT:PSS 1.8:1*Si-PSA: Silicone-based pressure-sensitive adhesive layer

[0101] Experimental example

[0102] Experimental Example 1: Surface Resistance Measurement

[0103] The surface resistance of the semiconductor adhesive film manufactured in the above examples and comparative examples was measured using a surface resistance meter (Mitsubishi Chemical, MCP-HT450, Japan) at 25°C and 10 GHz.

[0104] Experimental Example 2: Measurement of dielectric loss and dielectric constant

[0105] The changes in dielectric loss and dielectric constant of the semiconductor adhesive films manufactured in the above examples and comparative examples were measured using a dielectric measuring device (Keysight, N225A, USA) at 25°C and 10 GHz.

[0106] Experimental Example 3: Measurement of Repulsive Force

[0107] After cutting the semiconductor adhesive films of the above examples and comparative examples into a rectangular shape measuring 15 cm x 25 cm, and having a width x length of 15 x 25 cm, a lower body made of ceramic, a 500 μm thick electrode layer containing Al2O3 as a lower insulating layer, and a 130 μm thick electrode structure containing Al2O3 as an upper dielectric layer, an applied voltage of 3 kV was applied using an electrostatic chuck (Bipolar type) of a demo equipment of EST Co., Ltd., and when the base layer surface of the semiconductor adhesive film was adsorbed on the electrostatic chuck, one side of the cut semiconductor adhesive film was pulled and the force when the film moved was used as the repulsive force, and the high-voltage insulation resistance tester of METREL Co., TeraohmXA 10 kv-Standard Set MI-3210 was used to measure the resistance. The experimental photograph is shown in Fig. 2.

[0108] Experimental Example 4: Measurement of Residual Electrostatic Force

[0109] After Experimental Example 3, the voltage of the electrostatic chuck was cut off, and in order to measure the residual electrostatic force, one side of the semiconductor adhesive films of the cut examples and comparative examples was pulled after the cut off, and the force when the film moved was measured. At this time, if the electrostatic force was less than 1 gf / 150 mm, it was marked as ○, and if it was 1 gf / 150 mm or more, it was marked as X.

[0110] Experimental Example 5

[0111] The film appearance was observed with the naked eye and classified as follows.

[0112] ○: Entirely transparent appearance, X: Appearance deformation such as opaqueness or film breakage.

[0113] The results for the above experimental examples 1 to 5 are shown in Table 2.

[0114] Surface resistance (Ω / sq) 인가전압 1Kv Dielectric loss factor Dielectric constant Repulsive force (gf / 150mm) Residual electrostatic force (gf / 150mm) Appearance Example 13.27*10 11 0.143.0335X(10)○Example 21.04*10 12 0.0913.13195○○Example 31.13*10 12 0.0843.15210○○Example 42.32*10 12 0.0713.15285○○Example 54.53*10 12 0.013.410○○Example 65.75*10 10 0.133.0520○○Example 70.85*10 12 0.0953.11188○○Example 81.25*10 12 0.0863.14220○○Example 97.82*10 12 0.043.15210○○Example 10-----XOut GassingExample 1110 13 Ideal 0.0092.9815○○Example 1210 13 Ideal 0.0163.0330○○ Example 131.13*10 12 0.0843.15210○○Example 141.01*10 12 0.0793.17240○○Example 15-----XGel, Appearance NGComparative Example 110 13 Ideal 0.0022.910○○Comparative example 25.27*10 5 0.213.310○○Comparative Example 310 13 Ideal 0.133.330○○

[0115] [Explanation of symbols]

[0116] 10: Base layer

[0117] 20: Challenge layer

[0118] 30: Adhesive layer

Claims

1. Base layer containing a polyester compound, A conductive layer formed on the above base layer and A semiconductor adhesive film comprising an adhesive layer formed on the above-mentioned conductive layer.

2. In claim 1, A semiconductor adhesive film, wherein the polyester compound comprises at least one selected from the group consisting of polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polytrimethylene terephthalate (PTT), polycyclohexylene dimethylene terephthalate (PCDT), and polycaprolactone (PCL).

3. In claim 1, A semiconductor adhesive film having a surface roughness (Ra) value of the outer surface of the base layer of 55 nm to 70 nm.

4. In claim 1, A semiconductor adhesive film having a surface roughness (Rz) value of the outer surface of the base layer of 1.20 nm to 1.80 nm.

5. In claim 1, A semiconductor adhesive film wherein the above-mentioned conductive layer comprises a conductive polymer compound.

6. In claim 5, A semiconductor adhesive film, wherein the conductive polymer compound comprises at least one selected from the group consisting of poly(3,4-ethylenedioxythiophene) (PEDOT) poly(3,4-ethylenedioxythiophene): polystyrene sulfonic acid (PEDOT:PSS), polyaniline (PANI), polypyrrole (PPy), polythiophene (PT), poly(3-hexylthiophene) (P3HT), and poly(paraphenylene vinylene) (PPV).

7. In claim 6, The above conductive polymer compound is poly(3,4-ethylenedioxythiophene)(PEDOT)poly(3,4-ethylenedioxythiophene) : polystyrenesulfonic acid (PEDOT:PSS), A semiconductor adhesive film wherein the molar ratio of the above PEDOT and PSS is 1.5 to 2.3:

1.

8. In claim 5, A semiconductor adhesive film wherein the above-mentioned challenging layer further comprises a cyclic amine compound.

9. In claim 8, A semiconductor adhesive film, wherein the above cyclic amine compound comprises at least one selected from the group consisting of aziridine, azetidine, pyrrolidine, piperidine, azepane, and azocane.

10. In claim 1, A semiconductor adhesive film, wherein the adhesive layer comprises at least one compound selected from the group consisting of a rubber compound, an acrylic compound, a silicone compound, and a urethane compound.

11. In claim 10, A semiconductor adhesive film wherein the silicone compound is derived from a constituent unit of an organopolysiloxane of the chemical formula 1 below or a derivative thereof and a hydrogen siloxane copolymer of the chemical formula 2 below or a derivative thereof. [Chemical Formula 1] Here, R1 and R8 are each independently any one selected from the group consisting of hydrogen, alkyl, and alkenyl, R2 to R7 are any one of hydrogen or alkyl, and n1 is an integer from 5 to 200,000. [Chemical formula 2] Here, the above R9 to R 18 At least one of them is hydrogen, and R9 to R 18 at Except for the hydrogen moiety, the remainder are each independently alkyl, wherein n2 is an integer from 1 to 200, and n3 is an integer from 1 to 100.

12. In claim 11, A semiconductor adhesive film, wherein the molar ratio of the vinyl group contained in the organopolysiloxane of the above chemical formula 1 or a derivative thereof and the Si-H group of the hydrogen siloxane copolymer of the above chemical formula 2 or a derivative thereof is 1:1 to 3.

13. In claim 1, The above semiconductor adhesive film has a surface resistance of 1 Х10 when an external voltage of 1 kV is applied. 11 Inside 1 Х 10 13 A semiconductor adhesive film having a resistivity of Ω / sq.

14. In claim 1, The above semiconductor adhesive film is a semiconductor adhesive film having a dielectric loss of 0.02 to 0.1 under conditions of 25°C and 10 GHz.

15. In claim 1, The above semiconductor adhesive film is a semiconductor adhesive film having a dielectric constant of 2.8 to 3.3 under conditions of 25°C and 10 GHz.

16. In claim 1, The semiconductor adhesive film is a semiconductor adhesive film having a horizontal pulling force of 100 gf / 150 mm to 500 gf / 150 mm when a voltage of 3 kV is applied to an electrostatic chuck and the adhesive film and the electrostatic chuck react and are mutually attracted.

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