Electrical connector for bipolar microzone substrate support assembly

Abstract

An electrical connector for a substrate support assembly is disclosed herein. The electrical connector includes a first and a second interface body coupled to the first interface body. The first interface body includes first electrical terminals disposed in first sockets formed in the first interface body. The first electrical terminals are arranged circularly about a first center area. The second interface body includes second electrical terminals disposed in second sockets formed in the second interface body. The second electrical terminals are arranged circularly about a second center area. Each second terminal is in electrical communication with a respective first electrical terminal. A first coaxial electrical terminal is disposed in the first center area. A second coaxial electrical terminal is disposed in the second center area. The second coaxial electrical terminal supports two second power leads in communication with two first power leads of the first coaxial cable.

Description

ELECTRICAL CONNECTOR FOR BIPOLAR MICROZONE SUBSTRATE SUPPORT ASSEMBLYBACKGROUNDField

[0001] Embodiments of the present disclosure generally relate to semiconductor chamber components, and more particularly to an electrical connector for a substrate support assembly for use in high frequency electric fields.Description of the Related Art

[0002] Reliably producing nanometer and smaller features is one of the key technology challenges for next generation very large scale integration (VLSI) and ultra- large-scale integration (ULSI) of semiconductor devices. However, as the limits of circuit technology are pushed, the shrinking dimensions of VLSI and ULSI interconnect technology have placed additional demands on processing capabilities. Reliable formation of gate structures on the substrate is important to VLSI and ULSI success and to the continued effort to increase circuit density and quality of individual substrates and die.

[0003] To drive down manufacturing cost, integrated chip (IC) manufacturers demand higher throughput and better device yield and performance from every silicon substrate processed. Some fabrication techniques being explored for next generation devices under current development require processing at uniform plasma and temperatures across the substrate in a vacuum environment.

[0004] The supports for the substrates utilize electrostatic chucking to hold the substrates when processing. To maintain better chucking uniformity, which leads to better processing uniformity, industry has turned toward bipolar electrostatic chucks (ESC). In a bipolar dielectric electrostatic chuck, the combination of two electrodes and the substrate effectively forms a pair of series connected capacitors. Each electrode in the bipolar chuck is connected to a terminal of two power sources having a center tap.

[0005] Additionally, the ESC for the substrates have been relying on a multitude of heaters in smaller areas, i.e. , microzones, to adjust for temperature differentials and create more uniformity of temperatures across the substrate. In some conventional ESC’s, the ESC may have over 150 micro zone heaters each being uniquely controlled and powered through a series of electrical connections between the ESC and the substrate support assembly.

[0006] ESC are additionally using biasing electrodes to control the plasma sheath for more uniform processing. The ESC may have two or more independently controllable high voltage electrodes for controlling the plasma sheath. For example, a single electrode may be positioned under the substrate chucking surface and a second biasing electrode may circumscribe the first electrode and be positioned under a ring assembly.

[0007] As the number of electrical connections for the heaters and electrodes increase, the arrangement for the electrical connectors become more complex. The electrical connections must be arranged in a manner that provides control to the ESC without the power coupling from one electrode to another electrode or heater. Furthermore, the electrical connections are made between the vacuum environment and atmosphere and are required to maintain the pressure differential between the two environments.

[0008] Thus, there is a need for an improved electrical connector for bipolar microzone substrate support assemblies.SUMMARY

[0009] An electrical connector for a substrate support assembly is disclosed herein. The electrical connector includes a first and a second interface body coupled to the first interface body. The first interface body includes first electrical terminals disposed in first sockets formed in the first interface body. The first electrical terminals are arranged circularly about a first center area. The second interface body includes second electrical terminals disposed in second sockets formed in the second interface body. The second electrical terminals are arranged circularly about a second centerarea. Each second terminal is in electrical communication with a respective first electrical terminal. A first coaxial electrical terminal is disposed in the first center area. A second coaxial electrical terminal is disposed in the second center area. The second coaxial electrical terminal supports two second power leads in communication with two first power leads of the first coaxial cable.

[0010] In another embodiment, a substrate support assembly is described that includes an electrostatic chuck, a cooling base coupled to the electrostatic chuck, a facility plate coupled to the substrate support assembly, and one or more electrical connectors positioned in the substrate support assembly in electrical communication with the electrostatic chuck. The electrical connector includes a first and a second interface body coupled to the first interface body. The first interface body includes first electrical terminals disposed in first sockets formed in the first interface body. The first electrical terminals are arranged circularly about a first center area. The second interface body includes second electrical terminals disposed in second sockets formed in the second interface body. The second electrical terminals are arranged circularly about a second center area. Each second terminal is in electrical communication with a respective first electrical terminal. A first coaxial electrical terminal is disposed in the first center area. A second coaxial electrical terminal is disposed in the second center area. The second coaxial electrical terminal supports two second power leads in communication with two first power leads of the first coaxial cable.

[0011] In another embodiment, a processing system is described having a body. The body has a bottom, a lid and sidewalls. The bottom lid and sidewalls enclose a processing volume. A substrate support assembly is disposed in the processing volume. The substrate support assembly includes an electrostatic chuck, a cooling base coupled to the electrostatic chuck, a facility plate coupled to the substrate support assembly, and one or more electrical connectors positioned in the substrate support assembly in electrical communication with the electrostatic chuck. The electrical connector includes a first and a second interface body coupled to the first interface body. The first interface body includes first electrical terminals disposed in first sockets formed in the first interface body. The first electrical terminals are arranged circularly about a first center area. The second interface body includes second electricalterminals disposed in second sockets formed in the second interface body. The second electrical terminals are arranged circularly about a second center area. Each second terminal is in electrical communication with a respective first electrical terminal. A first coaxial electrical terminal is disposed in the first center area. A second coaxial electrical terminal is disposed in the second center area. The second coaxial electrical terminal supports two second power leads in communication with two first power leads of the first coaxial cable.BRIEF DESCRIPTION OF THE DRAWINGS

[0012] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only exemplary embodiments and are therefore not to be considered limiting of its scope, and may admit to other equally effective embodiments.

[0013] Figure 1 is a cross-sectional schematic view of an exemplary plasma processing chamber according to an embodiment.

[0014] Figure 2 is a schematic sectional view of a portion of an exemplary substrate support assembly according to an embodiment.

[0015] Figure 3 is a sectional view of the electrical connector according to an embodiment.

[0016] Figure 4 is a top isometric view of the electrical connector.

[0017] Figure 5 is a top plan view of the electrical connector.

[0018] Figure 6 is a bottom plan view of the electrical connector.

[0019] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.DETAILED DESCRIPTION

[0020] Embodiments described herein provide a substrate support assembly which enables a variety of temperature operations of an electrostatic chuck (ESC) so that a substrate disposed thereon is maintained at a processing temperature suitable for processing while other surfaces of a processing chamber are maintained at a different temperature. In one example, a cryogenic processing temperature (i.e., temperature of the substrate) is intended to refer to temperatures less than -10 degrees Celsius at one substrate support. In another example, a high processing is intended to refer to temperatures greater than 300 degrees Celsius at another substrate support.

[0021] Although the substrate support assembly is described below in an etch processing chamber, the substrate support assembly may be utilized in other types of plasma processing chambers, such as physical vapor deposition chambers, chemical vapor deposition chambers, ion implantation chambers, among others, and other systems where processing a substrate maintained at the cryogenic or high temperature processing is desirable. It is to be noted however, that the substrate support assemblies and chamber components described herein may be utilized to advantage at other processing temperatures.

[0022] Figure 1 is a cross-sectional schematic view of an exemplary plasma processing chamber 100, shown configured as an etch chamber, having a substrate support assembly 101 . As mentioned above, the substrate support assembly 101 may be utilized in other types of plasma processing chambers, for example plasma treatment chambers, physical vapor deposition chambers, chemical vapor deposition chambers, and ion implantation chambers, among others, as well as other systems where the ability to uniformly maintain a surface of a workpiece, such as a substrate 124, at a specific processing temperature is desirable. Dry reactive ion etching the substrate 124 maintained at a specific processing temperatures enables ions to bombard the upward facing surfaces of materials disposed on the substrate 124 with decreased spontaneous etching so that trenches with smooth, vertical sidewalls are formed. In one example, diffusion of ions in porosities of a low-k dielectric material disposed on the substrate 124 uniformly maintained at the cryogenic processingtemperature is decreased while ions continue to bombard the upward facing surface of the low-k dielectric material to form trenches with smooth, vertical sidewalls. Additionally, selectivity of etching one material versus another can be improved at the cryogenic processing temperature. For example, selectivity between silicon (Si) and silicon dioxide (SiC ) increases exponentially as temperature is decreased.

[0023] The plasma processing chamber 100 includes a chamber body 102 having sidewalls 104, a bottom 106 and a lid 108 that enclose a processing region 110. An injection apparatus 112 is coupled to the sidewalls 104 and / or lid 108 of the chamber body 102. A gas panel 114 is coupled to the injection apparatus 112 to allow process gases to be provided into the processing region 110. The injection apparatus 112 may be one or more nozzle or inlet ports, or alternatively a showerhead. Process gases, along with any processing by-products, are removed from the processing region 110 through an exhaust port 116 formed in the sidewalls 104 or bottom 106 of the chamber body 102. The exhaust port 116 is coupled to a pumping system 140, which includes throttle valves and pumps utilized to control the vacuum levels within the processing region 110. Processing by-products are also removed through the exhaust port 116 using the pumping system 140.

[0024] The process gases may be energized to form a plasma within the processing region 110. The process gases may be energized by capacitively or inductively coupling RF power to the process gases. In one embodiment, which can be combined with other embodiments described herein, depicted in Figure 1 , a plurality of coils 118 are disposed above the lid 108 of the plasma processing chamber 100 and coupled through a matching circuit 120 to an RF power source 122.

[0025] The substrate support assembly 101 is disposed in the processing region 110 below the injection apparatus 112. The substrate support assembly 101 includes an electrostatic chuck (ESC) 103 and optionally a cooling base 105. The cooling base 105 is coupled to the ESC 103 and a facility plate 107. The facility plate 107, supported by a ground plate 111 , is configured to facilitate electrical, cooling, heating, and gas connections with the substrate support assembly 101. The ground plate 111 is supported by the bottom 106 of the processing chamber. A dielectric plate 109 electrically insulates the facility plate 107 from the ground plate 111.

[0026] The cooling base 105 includes a base channel 115 fluidly coupled to a cooling base 117. The cooling base 117 provides a base fluid, such as a refrigerant, to the base channel 115 so that the cooling base 105, and consequently, the substrate 124, may be maintained at a predetermined cryogenic temperature. Similarly, the facility plate 107 includes a facility channel 113 (further detailed in Figure 2) fluidly coupled to a heating fluid source 119. The heating fluid source 119 provides facility fluid to the facility channel 113 so that the facility plate 107 is maintained a predetermined temperature. The heating fluid source 119 contains a heat exchange fluid that maintains the facility plate 107 at a temperature at or near ambient temperatures. In one example, the base fluid from the cooling base 117 maintains the cooling base 105 at a temperature lower than a temperature of the facility plate 107.

[0027] The heating fluid source 119 is in fluid communication with the facility channel 113 via a facility inlet conduit 127 connected to an inlet (not shown) of the facility channel 113 and via a facility outlet conduit 129 connected to an outlet (not shown) of the facility channel 113 such that the facility plate 107 is maintained at a predetermined ambient temperature. The heating fluid source 119 provides the heat exchange fluid, which is circulated through the facility channel 113 of the facility plate 107. The heat exchange fluid is generally dielectric or electrically insulative so that an electrical path is not formed through the heat exchange fluid when circulated through the substrate support assembly 101. A non-limiting example of a suitable facility fluid includes fluorinated heat transfer fluids such as perfluoropolyether (PFPE) fluids. The heat exchange fluid flowing through the facility channel 113 enables the facility plate 107 to be maintained at the predetermined ambient temperature, which assists in maintaining the dielectric plate 109 at the predetermined ambient temperature.

[0028] The ESC 103 has a support surface 130 and a bottom surface 132 opposite the support surface 130. In one embodiment, which can be combined with other embodiments described herein, the ESC 103 is fabricated from a ceramic material, such as alumina (AI2O3), aluminum nitride (AIN) or other suitable material. Alternatively, the ESC 103 may be fabricated from a polymer, such as polyimide, polyetheretherketone, polyaryletherketone and the like.

[0029] A bond layer 133 is provided at an interface between the bottom surface 132 of the ESC 103 and a top surface 134 of the cooling base 105. The ESC 103 may be made of alumina (AI2O3) or aluminum nitride (AIN). The cooling base 105 may be made of aluminum (Al), molybdenum (Mo), a ceramic, or combinations thereof. The bond layer 133 allows strain to be absorbed due to small differences in the coefficient of thermal expansion (CTE) of the ESC 103 and cooling base 105.

[0030] The ESC 103 includes a bipolar chucking electrode 126 disposed therein. The bipolar chucking electrode 126 is arranged as two electrodes with positive voltage applied to a first electrode 126A and a negative voltage applied to a second electrode 126B. The bipolar chucking electrode 126 balances the electrostatic force that the ESC 103 exerts on the substrate 124 located on the support surface 130 the ESC 103. In one example, the first electrode 126A and the second electrode 126B are coplanar.

[0031] The ESC 103 may additionally include a wafer separation mask (Not shown) having a plurality of support members on the support surface of the chuck body. The wafer separation mask is manufactured from a conductive material such as titanium, titanium nitride, or stainless steel. The support member holds the substrate 124 in a spaced relation to the support surface 130 of the ESC 103.

[0032] The chucking electrode 126 is coupled through an RF filter and the facility plate 107 to one or more chucking power sources 135, which provides a DC power to electrostatically secure the substrate 124 to the support surface 130 of the ESC 103. The RF filter prevents RF power utilized to form a plasma (not shown) within the plasma processing chamber 100 from damaging electrical equipment or presenting an electrical hazard outside the chamber. In one example, each of the first electrode 126A and the second electrode 126B in the ESC 103 is connected to a respective terminal of two power sources (not shown) having a center tap. The center tap of the power supply may be connected to the wafer separation mask. Thus, the change in distance between the substrate 124 and the bipolar chucking electrode 126 due to dielectric thickness, substrate 124 backside roughness, support surface 130 roughness, or other characteristics that cause changes in the electrostatic forces, may be balanced.

[0033] It should be appreciated that the ESC 103 may have more than one chucking electrode 126. The chucking electrode 126 may be arranged in zones. For example, the ESC 103 may have the first electrode 126A and the second electrode 126B in an outer zone surrounding, or circumscribing, an inner zone having a third and a fourth electrode. In this arrangement, the chucking electrode 126 would have four power lines supplying voltage to each of the first electrode 126A, the second electrode 126B, the third electrode, and the fourth electrode. It should further be understood that the zones may include more than 2 zones, such as a third or fourth zone with each having separate power connections and individually controlled.

[0034] The ESC 103 includes one or more resistive heaters 128 embedded therein. The resistive heaters 128 are utilized to control the temperature of the ESC 103, which is cooled by the cooling base 105, such that cryogenic processing temperatures suitable for processing a substrate 124 disposed on the support surface 130 of the substrate support assembly 101 may be maintained. The resistive heaters 128 are coupled through the facility plate 107 and an RF filter to a heater power source 136. The RF filter prevents RF power utilized to form a plasma (not shown) within the plasma processing chamber 100 from damaging electrical equipment or presenting an electrical hazard outside the chamber. The heater power source 136 may provide 500 watts or more power to the resistive heaters 128. The heater power source 136 includes a controller (not shown) utilized to control the operation of the heater power source 136, which is generally set to heat the substrate 124 to a predetermined temperature. In one embodiment, which can be combined with other embodiments described herein, the resistive heaters 128 include a plurality of laterally separated heating zones, wherein the controller enables at least one zone of the resistive heaters 128 to be preferentially heated relative to the resistive heaters 128 located in one or more of the other zones. For example, the resistive heaters 128 may be arranged concentrically in a plurality of separated heating zones. The resistive heaters 128 maintain the substrate 124 at a processing temperature suitable for processing. In one embodiment, which can be combined with other embodiments described herein, the processing temperature is less than about -10 degrees Celsius. For example, the processing temperature is between about -10 degrees Celsius to about -150 degreesCelsius, including down to about -200 degrees Celsius. In another embodiment, which can be combined with other embodiments described herein, the processing temperature is greater than about 150 degrees Celsius. For example, the processing temperature is between about 150 degrees Celsius to about 350 degrees Celsius.

[0035] The ESC 103 may additionally include a plurality of spatially tunable heaters123 embedded therein and disposed above the one or more resistive heaters 128. The spatially tunable heaters 123 may include 150 or more small heaters suitable for adjusting the temperature across of the support surface 130 of the ESC 103. Power to the resistive heaters 128 and the ESC 103 from the heater power source 136 and the chucking power source 135, respectively, is provided by an electrical feedthrough or electrical connector 138. The electrical connector 138 is described in more detail below.

[0036] The cooling base 117 is in fluid communication with the base channel 115 via a base inlet conduit connected to an inlet of the base channel 115 and via a base outlet conduit connected to an outlet of the base channel 115 such that the cooling base 105 is maintained at a predetermined temperature. In one embodiment, which can be combined with other embodiments described herein, the cooling base 117 contains a base fluid. The base fluid is generally dielectric or electrically insulative so that an electrical path is not formed through the base fluid when circulated through the substrate support assembly 101 . A non-limiting example of suitable base fluid includes fluorinated heat transfer fluids. The cooling base 117 provides the base fluid, which is circulated through the base channel 115 of the cooling base 105. The base fluid flowing through the base channel 115 enables the cooling base 105 to be maintained at the temperature so that the substrate 124 disposed on the ESC 103 is uniformly maintained at the processing temperature.

[0037] Figure 2 is a schematic sectional view of a portion of an exemplary substrate support assembly 101 according to an embodiment. The substrate support assembly 101 is configured to enable high temperature operation of ESC 103 so that a substrate124 (shown in Figure 1 ) disposed thereon is maintained at the processing temperatures. The cooling base 105, the facility plate 107 and the dielectric plate 109are shown in Figure 2. The ESC 103 is also shown coupled to the top surface 134 of the cooling base 105. Also shown is the electrical connector 138 positioned in a geometric center of the substrate support assembly 101. It is contemplated that the electrical connector 138 may be positioned in another location.

[0038] The ESC 103 has a plurality of electrical connections for operating a plurality of heaters, bias electrodes, chucking electrodes, etc. The ESC may concentrate the connections into one or more pin assemblies 332. The pin assembles 332 may have sockets 384 containing an electrical pin 394. The electric pin 394 may be coupled to low voltage, such as 220 V or less, electrical component in the ESC 103. For example, the electrical pin 394 may provide DC, AC or RF power to the bias electrodes. In one example, the electrical pin 394 may receive a pulsed or continuous voltage. The pin assemblies 332 may additionally have sockets 384 containing a high voltage (HV) coaxial pin assembly 380. Or, the pin assemblies 332 may alternately have sockets 384 configured for a triaxial pin assembly similar in configuration and or location as the coaxial pin assembly 380. The HV coaxial pin assembly 380 may have two or more separate power leads therein for conveying HV to another electrical component in the ESC103. For example, the HV coaxial pin assembly 380 may provide DC, AC or RF power to the bias electrodes. In one example, the electrical pin 394 may receive a pulsed or continuous voltage.

[0039] During use, the substrate support assembly 101 may be divided into two or more zones, such as a first zone 200A and a second zone 200B. The first zone 200A and the second zone 200B are characterized as different pressure regions. For example during processing of the substrate, the first zone 200A is maintained at negative or vacuum pressures while the second zone 200B is maintained at or near atmospheric or ambient pressures. A seal 205 prevents leakage between the first zone 200A and the second zone 200B. In another embodiment, the first zone 200A and the second zone 200B are characterized as different temperature regions, which may or may not be also characterized as different pressure regions.

[0040] The electrical connector 138 functions in one aspect to maintain the pressures within the first zone 200A and the second zone 200B. A seal 210 interfacedbetween the facility plate 107 and the electrical connector 138 to maintain isolation of the pressures within the first zone 200A and the second zone 200B. The seal 210 may be any suitable seal or gasket, such as an 0-ring type, cup seal, lip seal, or gasket, among others. The seal 210 made fabricated from a polymeric, elastomeric material or other suitable material.

[0041] The electrical connector 138 is coupled to the cooling base 105 by a plurality of fasteners 215 (only one is shown in this view), such as a screw or bolt. Each fastener 215 is received in a threaded hole 220 formed in a body 225. The dielectric plate 109 is coupled to the facility plate 107 by one or more fasteners 230 (only one is shown in Figure 2), such as a screw or bolt.

[0042] The electrical connector 138 includes a plurality of upper or first sockets 235 and a plurality of lower or second sockets 240. Each of the first sockets 235 and the second sockets 240 are configured as female or male electrical connector interfaces. Each of the first sockets 235 are configured to receive pins 245 of electrical lines coupled to either of the resistive heaters 128 (shown in Figure 1 ) or the chucking electrode 126 (shown in Figure 1 ) of the ESC 103. Each of the second sockets 240 are configured to receive a pogo pin (not shown) or other suitable electrical connector coupled to either the heater power source 136 or the chucking power source 135 (both shown in Figure 1 ).

[0043] The electrical connector 138 additionally includes first center sockets 238 disposed in a first center area (501 in Figure 5). Each first center socket 238 supports one or more of the first coaxial electrical terminal 380 having two power leads, i.e. , a first power lead 336 and a second power lead 331 , which enables high voltage (HV) electrical transmission through the first center sockets 238. HV, as used herein, means voltage exceeding 200V. The first center socket 238 may be configured to transmit 1 .8KV or more of electricity, such as voltages up to 10kV. It should also be appreciated that the voltage may be AC, DC or even RF. The first power lead 336 is spaced from the second power lead 331 by an insulator 339. The insulator 339 provides electrical separation between the first power lead 336 and the second power lead 331 .

[0044] Although only one first center socket 238 is shown in Figure 2, there may be two or more, such as three, first center sockets 238 disposed in the first center area 501 . In one example, the first center sockets 238 is disposed in the center of the first center area 501 . A single first center sockets 238 may be disposed in the center of the first center area 501 without other first center sockets 238 present in the first center area 501 . Alternately, one of the first center sockets 238 may be in the center of the first center area 501 while surrounded by other first center sockets 238 disposed in the first center area 501. In another example, the first center sockets 238 may be disposed offset from the center of the first center area 501 . The first center sockets 238 may be formed in the first center area 501 radially about the center of the first center area 501 . Alternately, first center sockets 238 may be disposed in the first center area 501 about the center of the first center area 501 in a pattern.

[0045] The electrical connector 138 additionally includes second center sockets 242 disposed in a second center area (601 in Figure 6). Each second center socket 242 supports a second coaxial terminal having two power leads, i.e., an outside conductor 386 and an inside conductor 376, which enables high voltage electrical transmission through the second center socket 242. The second center socket 242 may be configured to transmit 1.8KV or more of electricity, such as voltages up to 10kV, to the first center socket 238. The outside conductor 386 is spaced from the inside conductor 376 by the insulator 339. In one example, the insulator 339 has a hollow tubular shape with the inside conductor 376 disposed inside the tube and the outside conductor 386 disposed outside the tube to insulate the inside conductor 376 from the outside conductor 386. The inside conductor 376 is electrically coupled to the second power lead 331. The outside conductor 374 is electrically coupled to the first power lead 336. Thus, each second center socket 242 is electrically coupled to a respective first center socket 238 for providing HV transmission.

[0046] In this manner, HV can be transmitted to the pin assemblies 332 in the ESC 103 through one or more connections in the electrical connector 138. Although the depicted electrical connector 138 is described with HV transmission through the sockets in the first and second center area 501 / 601 , it is contemplated that one ormore configured pairs of first sockets 235 and second sockets 240 outside the first and second center area 501 / 601 may be similarly configured for HV transmission.

[0047] Figure 3 is a sectional view of the electrical connector 138 as disclosed herein. The electrical connector 138 includes a first interface body 300A and a second interface body 300B opposing the first interface body 300A. The first interface body 300A and the second interface body 300B are coupled to each other. The second interface body 300B is coupled to an intermediate or third interface body 305. The second interface body 300B is coupled to the first interface body 300A and to a third interface body 300C. The second interface body 300B is circumscribed by the third interface body 300C.

[0048] A portion of the electrical connector 138 is disposed in the first zone 200A (shown in Figure 2) and another portion of the electrical connector 138 is disposed in the second zone 200B (shown in Figure 2). For example, the first interface body 300A and the third interface body 305 are positioned in the first zone 200A while the second interface body 300B is positioned in the second zone 200B (with respect to pressure). In one embodiment, the first interface body 300A and the third interface body 305 are a vacuum portion of the electrical connector 138 while the second interface body 300B is an atmospheric or ambient portion of the electrical connector 138.

[0049] In Figure 3, second sockets 240 and first sockets 235 are shown in crosssection. Each of the first sockets 235 are formed in the first interface body 300A and each of the second sockets 240 are formed in the second interface body 300B. While two first sockets 235 are visible in the cross-sections of Figure 3, it is contemplated that a number of the first sockets 235 may be arranged circularly about the first center area 501.

[0050] Each of the first interface body 300A and the second interface body 300B are fabricated from dielectric materials to electrically insulate a plurality of conductive electrical unions 310 disposed between the first interface body 300A and the second interface body 300B. In one example, the first interface body 300A is fabricated from a polymer material, such as thermoplastic material, for example a polyether etherketone (PEEK) material. In another example, the second interface body 300B is fabricated from high dielectric constant material, such as a ceramic material, for example aluminum oxide. The third interface body 305 may be fabricated from a metallic material, such as titanium. A seal groove 312, for receiving the seal 210 (shown in Figure 2), is formed in a lower surface 314 of the third interface body 305. Each of the first interface body 300A and the second interface body 300B may be brazed, potted or otherwise coupled to the third interface body 305. In one example, the first interface body 300A and the second interface body 300B are potted together to create an air seal between the first interface body 300A and the second interface body 300B.

[0051] The connection between the third interface body 305 and the second interface body 300B is provided by a small surface to surface contact. This may provide a thermal choke to help isolate the seal 210 from the colder ESC 103. Also, the connection between the first interface body 300A and the second interface body 300B, and the third interface body 305 coupled to the back of the second interface body 300B may also help thermally isolate the seal 210.

[0052] Each conductive electrical union 310 includes upper or first electrical terminals 315, lower or second electrical terminals 320 and connecting tabs 325. The first electrical terminals 315 are disposed in the first sockets 235 formed in the first interface body 300A. The first electrical terminals 315 are likewise arranged circularly about the first center area 501. The second electrical terminals 320 are disposed in the second sockets 240 formed in the second interface body 300B. The second electrical terminals 320 are arranged circularly about the second center area 601 .

[0053] Each of the first electrical terminals 315 extend from the conductive electrical union 310 into the first sockets 235, and each of the second electrical terminals 320 extend from the conductive electrical union 310 into the second sockets 240. The conductive electrical union 310 also includes a plurality of connecting tabs 325. One of the connecting tabs 325 is disposed between each pair of the first electrical terminals 315 and the second electrical terminals 320. The connecting tab 325 is an electrically conductive metal coupled to and / or at least partially surroundingeach of the first electrical terminals 315 and the second electrical terminals 320. Thus, each respective second electrical terminals 320 is in electrical communication with a respective first electrical terminal 315. Separate connecting tabs 325 provide the electrical connection within the electrical connector 138 between each pair of first and second electrical terminals 315, 320. Some of the connecting tabs 325 extend laterally so that the centerlines of mating electrical terminals 315, 320 do not have to be aligned. This allows the pitch of first electrical terminals 315 to be different than the pitch of the electrical terminals 320. In the example depicted herein, the pitch of first electrical terminals 315 is greater than the pitch of the electrical terminals 320, thus allowing the second sockets 240 to be arranged more densely and take up less space than first sockets 235.

[0054] The first electrical terminals 315, the second electrical terminals 320 and the connecting tab 325 are made from electrically conductive materials suitable of efficient electrical transmission. Examples of conductive materials include molybdenum (Mo), copper (Cu), or other electrically conductive metals. The electrically conductive metals may be coated with another electrically conductive metal, such as silver (Ag) or gold (Au). In a specific example, the first electrical terminals 315 are Cu coated with Ag, the second electrical terminals 320 are Mo, and the connecting tabs 325 is Cu.

[0055] One or both of the first electrical terminals 315 and the second electrical terminals 320 may be coupled to the connecting tab 325 by brazing, or by a threaded connection 330. The second interface body 300B includes protruding sidewalls 335 that separate the connecting tabs 325 and into the first interface body 300A. The protruding sidewalls 335 provide electrical insulation between the different connecting tabs 325 coupling each pair of each pair of first and second electrical terminals 315, 320 so that electrical breakdown and shorting are substantially prevented. The protruding sidewalls 335 also electrical separates adjacent electrical paths (e.g., first electrical terminals 315 electrically connected by the connecting tab 325 to respective second electrical terminals 320). In this manner, lower voltage can be transmitted to the pin assemblies 332 in the ESC 103 through one or more connections in the electrical connector 138.

[0056] Figures 4 through 6 will be discussed together to illustrate various pin configurations for the electrical connector 138. Figure 4 is a top isometric view of the electrical connector 138. Figure 5 is a top plan view of the electrical connector 138. Figure 6 is a bottom plan view of the electrical connector 138.

[0057] As shown in Figures 4 through 6, the electrical connector 138 has a top 402 and a bottom 401. Additionally, the electrical connector 138 has a central terminal set 400 surrounded by a plurality of peripheral terminal sets 405. Each of the central terminal set 400 and the peripheral terminal sets 405 comprises a separate electrical path through a paired first and second electrical terminals 315, 320.

[0058] The central terminal set 400 is disposed in the first center area 501 and extends through to the second center area 601. The central terminal set 400 comprises one or more of the first electrical terminals 315 that are electrically connected to a respective second electrical terminal 320. In Figure 4, the central terminal set 400 comprises a single one of the first electrical terminals 315. In Figure 5, the central terminal set 400 comprises a pair of the first electrical terminals 315. It should be appreciated that the central terminal set 400 may contain any number of first electrical terminals 315. Additionally, it should be appreciated that the central terminal set 400 may have first electrical terminals 315 centrally located in the first center area 501. Alternately, the central terminal set 400 may have first electrical terminals 315 off set from the center location in the first center area 501. In one example, the central terminal set 400 is comprised of HV coaxial terminals. The central terminal set 400 may be coupled to the chucking electrode 126 (shown in Figure 1 ) of the ESC 103.

[0059] Likewise, each of the plurality of peripheral terminal set 405 comprises one of the first electrical terminals 315 that is electrically connected to one of the second electrical terminals 320. The peripheral terminal sets 405 may contain eight or more electrical terminals. In one example, the peripheral terminal set 405 contain non-high voltage terminals. At least a portion of the peripheral terminal set 405 may be dedicated to heater elements of the resistive heaters 128 (shown in Figure 1 ). One of the terminals in the peripheral terminal set 405 may be coupled to ground. Optionally,one or more of the terminals in the peripheral terminal set 405 may be a HV coaxial terminal. In one example, a second peripheral terminal set may be disposed outward of the peripheral terminal set 405, for example, concentrically arranged.

[0060] The electrical connector 138 as described herein provides a current of up to about 25 amps during operation at a wide temperature range. The electrical connector 138 as described herein provides a voltage standoff (breakdown voltage) of about 7 kilo Volts (kV) between the various electrical paths as well as between the electrical paths and the interface bodies (e.g., first interface body 300A, second interface body 300B and third interface body 305). This reduces arcing within the substrate support assembly 101. The electrical connector 138 as described herein provides suitable vacuum sealing up to and including pressures of about 10’3Torr (e.g., about 0.0001934 pounds per square inch (psi)) during operation. Furthermore, the electrical connector 138 allows for a wide variety of electrical connections to the ESC to be concentrated into a small platform, for example, wherein the HV connections can be made via a single coaxial pin versus two or more pins.

[0061] While the foregoing is directed to examples of the present disclosure, other and further examples of the disclosure may be devised without departing from the basic scope thereof, and the scope thereof is determined by the claims that follow.

Claims

What is claimed is:1 . An electrical connector, comprising: a first interface body wherein the first interface body comprises: a plurality of first electrical terminals disposed in first sockets formed in the first interface body, wherein the first electrical terminals are arranged circularly about a first center area; and a first coaxial electrical terminal disposed in the first center area, wherein the first coaxial electrical terminal supports two or more first power leads; and a second interface body coupled to the first interface body and to a third interface body, the second interface body circumscribed by the third interface body, wherein the second interface body comprises: a plurality of second electrical terminals disposed in second sockets formed in the second interface body, wherein the second electrical terminals are arranged circularly about a second center area, wherein each respective second terminal of the plurality of second electrical terminals is in electrical communication with a respective first electrical terminal of the first electrical terminals; and a second coaxial electrical terminal disposed in the second center area, wherein the second coaxial electrical terminal supports two or more second power leads in communication with the two or more first power leads.

2. The electrical connector of claim 1 wherein the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

3. The electrical connector of claim 1 further comprising: a third coaxial electrical terminal disposed in the first center area, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed in the second center area, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads.

4. The electrical connector of claim 3 wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

5. The electrical connector of claim 1 wherein the second interface body further comprising: a plurality of protruding sidewalls that extend into the first interface body between each of the electrical terminals of the first interface body.

6. The electrical connector of claim 1 wherein the third interface body comprises: a seal groove formed in a bottom surface of the third interface body that faces away from the first interface body.

7. The electrical connector of claim 1 further comprising: a third coaxial electrical terminal arranged circularly about the first center area and disposed in a first circular path formed by the first electrical terminals, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed circularly about the second center area and disposed in a second circular path formed by the second electrical terminals, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads, and wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

8. The electrical connector of claim 1 wherein a first of the two first power leads surrounds and is concentric to a second of the two first power lead.

9. A substrate support assembly comprising: an electrostatic chuck (ESC); a cooling base coupled to the electrostatic chuck; a facility plate coupled to the cooling base; andone or more electrical connectors positioned in the substrate support assembly, the electrical connectors in electrical communication with the electrostatic chuck, wherein the electrical connectors comprises: a first interface body wherein the first interface body comprises: a plurality of first electrical terminals disposed in first sockets formed in the first interface body, wherein the first electrical terminals are arranged circularly about a first center area; and a first coaxial electrical terminal disposed in the first center area, wherein the first coaxial electrical terminal supports two or more first power leads; and a second interface body coupled to the first interface body and to a third interface body, the second interface body circumscribed by the third interface body, wherein the second interface body comprises: a plurality of second electrical terminals disposed in second sockets formed in the second interface body, wherein the second electrical terminals are arranged circularly about a second center area, wherein each respective second terminal of the plurality of second electrical terminals is in electrical communication with a respective first electrical terminal of the first electrical terminals; and a second coaxial electrical terminal disposed in the second center area, wherein the second coaxial electrical terminal supports two or more second power leads in communication with the two or more first power leads10. The substrate support assembly of claim 9 wherein the electrical connectors are non-concentrically spread across a bottom of the ESC.

11. The substrate support assembly of claim 9 wherein the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

12. The substrate support assembly of claim 9 further comprising:a third coaxial electrical terminal disposed in the first center area, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed in the second center area, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads, and wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

13. The substrate support assembly of claim 9 further comprising: a third coaxial electrical terminal arranged circularly about the first center area and disposed in a first circular path formed by the first electrical terminals, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed circularly about the second center area and disposed in a second circular path formed by the second electrical terminals, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads, and wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

14. The substrate support assembly of claim 9 wherein the second interface body further comprising: a plurality of protruding sidewalls that extend into the first interface body between each of the electrical terminals of the first interface body.

15. The substrate support assembly of claim 9 wherein the third interface body comprises: a seal groove formed in a bottom surface the third interface body that faces away from the first interface body and a seal disposed in the seal groove is in contact with the cooling base.

16. The substrate support assembly of claim 9 wherein one of the plurality of first electrical terminals comprises:a sensor.

17. The substrate support assembly of claim 16 wherein the sensor is a pressure, temperature, flow, voltage, or current sensor.

18. A processing system comprising: a body having a bottom, a lid and sidewalls, wherein the bottom, lid and sidewalls enclose a processing volume; a substrate support assembly disposed in the processing volume, the substrate support assembly comprising: an electrostatic chuck (ESC); a cooling base coupled to the electrostatic chuck; a facility plate coupled to the cooling base; and one or more electrical connectors positioned in the substrate support assembly, the electrical connectors in electrical communication with the electrostatic chuck, wherein the electrical connectors comprises: a first interface body wherein the first interface body comprises: a plurality of first electrical terminals disposed in first sockets formed in the first interface body, wherein the first electrical terminals are arranged circularly about a first center area; and a first coaxial electrical terminal disposed in the first center area, wherein the first coaxial electrical terminal supports two or more first power leads; and a second interface body coupled to the first interface body and to a third interface body, the second interface body circumscribed by the third interface body, wherein the second interface body comprises: a plurality of second electrical terminals disposed in second sockets formed in the second interface body, wherein the second electrical terminals are arranged circularly about a second center area, wherein each respective second terminal of the plurality of secondelectrical terminals is in electrical communication with a respective first electrical terminal of the first electrical terminals; and a second coaxial electrical terminal disposed in the second center area, wherein the second coaxial electrical terminal supports two or more second power leads in communication with the two or more first power leads.

19. The processing system of claim 18 wherein the substrate support assembly further comprises: a third coaxial electrical terminal arranged circularly about the first center area and disposed in a first circular path formed by the first electrical terminals, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed circularly about the second center area and disposed in a second circular path formed by the second electrical terminals, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads, and wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

20. The processing system of claim 18 wherein the substrate support assembly further comprises: a third coaxial electrical terminal disposed in the first center area, wherein the third coaxial electrical terminal supports two third power leads; and a fourth coaxial electrical terminal disposed in the second center area, wherein the fourth coaxial electrical terminal supports two fourth power leads in communication with the two third power leads, and wherein the two third power leads and the two first power leads are high voltage power leads supporting voltages up to 10kVDC.

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