Preparation method for full-color micro-led display device

Abstract

Provided in the present invention is a preparation method for a full-color Micro-LED display device. The method comprises: sequentially preparing monochromatic Micro-LED chip arrays and a first receiving substrate, accurately fixing three monochromatic Micro-LED chip arrays at preset positions of the first receiving substrate by means of thermocompression bonding, and respectively removing bases; adding a strong adhesive light-transmitting material to the side of the first receiving substrate that faces a full-color Micro-LED chip array, and fixing a prepared second receiving substrate onto the first receiving substrate by means of the strong adhesive light-transmitting material; removing the first receiving substrate, such that the retained second receiving substrate, the strong adhesive light-transmitting material, the full-color Micro-LED chip array and metal bump electrodes on Micro-LED chips form a pre-bonded module; and accurately fixing the pre-bonded module and a driving substrate together by means of thermocompression bonding, so as to complete the preparation of a full-color Micro-LED display device. The present invention can improve the accuracy, stability and transfer efficiency of multiple-transfer integration of full-color Micro-LEDs, requires a simple process, reduces production costs, and is suitable for large-scale commercial production.

Description

A method for preparing a full-color Micro-LED display device Technical Field

[0001] The present invention relates to the technical field of semiconductor light-emitting devices, and in particular to a method for preparing a full-color Micro-LED display device. Background Art

[0002] Micro-LED technology was first proposed in 2000 by a research team at Texas Tech University. Compared to traditional LED technology, Micro-LEDs feature a smaller structure, higher light extraction efficiency, improved current spreading, and lower self-heating. Furthermore, from an electrical perspective, Micro-LEDs offer advantages such as shorter response times and lower power consumption.

[0003] Currently, commercial Micro-LED transfer and integration solutions can be basically divided into:

[0004] 1. PDMS stamp transfer and laser transfer solutions for large-screen display devices. PDMS stamp transfer utilizes the van der Waals forces between the stamp and the Micro-LED to selectively secure the Micro-LED chip on the donor substrate. Laser transfer utilizes pulsed high-energy laser light to illuminate a transparent substrate, rapidly increasing the local pressure of the material in the illuminated area. This separates the Micro-LED on the absorbent material layer from the transparent substrate and places it on the target substrate.

[0005] While both of the aforementioned approaches can achieve full-color Micro-LED display device fabrication, they still have drawbacks. For example, because the van der Waals force used in PDMS elastomer stamp transfer is a weak binding force, external interference can easily affect the pick-up and placement efficiency of the chips during the transfer process. Furthermore, the spacing between Micro-LED chips transferred using van der Waals forces is often too large, making it impossible to fabricate high-density, high-precision Micro-LED display devices. Furthermore, the effectiveness of laser transfer is affected by the homogenization of the laser spot, resulting in gaps at the edges of the transferred chip array.

[0006] 2. Monolithic integration solutions suitable for small-screen display devices (such as AR and VR devices). The monolithic integration solution is mainly used to prepare small-size (<2 inches) display devices. This solution will directly make LED epitaxial wafers into Micro-LED arrays, and then transfer the entire array to the driver substrate. Its advantage is that the entire process is manufactured using semiconductor technology, and the key pixel size can be defined by a photolithography machine. Compared with the mass transfer solution, this technology can achieve a smaller pixel pitch (the minimum limit depends on the array pattern pitch on the epitaxial substrate), without the need for secondary transfer similar to mass transfer technology, and achieve ultra-high pixel and ultra-high resolution display in one go. However, the characteristic of the monolithic integration solution that only one transfer is performed during the entire process also makes it difficult to apply to the preparation of full-color Micro-LED display devices.

[0007] Therefore, how to reduce the impact of the chip pick-and-place process, improve the placement accuracy of the transfer process and the uniformity of the Micro-LED chip array, while achieving the preparation of high-density, high-precision, full-color Micro-LED display devices, is a current technical challenge.

[0008] In summary, in view of the shortcomings of the existing technology, it is necessary to provide a method for preparing a full-color Micro-LED display device with high uniformity and high density. Summary of the Invention

[0009] Based on this, the purpose of the present invention is to provide a method for preparing a full-color Micro-LED display device, so as to prepare a Micro-LED display device with high uniformity and high density.

[0010] On the one hand, the embodiments of the present invention provide:

[0011] A method for preparing a full-color Micro-LED display device, wherein the method comprises:

[0012] Three single-color Micro-LED chip arrays and a first receiving substrate are sequentially prepared. The three single-color Micro-LED chip arrays are precisely fixed to the first receiving substrate at predetermined positions through thermal compression bonding. The substrates of the three single-color Micro-LED chip arrays are then removed to complete the transfer integration of the full-color Micro-LED chip array.

[0013] Adding a highly viscous, light-transmitting material to the side of the first receiving substrate facing the full-color Micro-LED chip array to prepare a second receiving substrate, and fixing the second receiving substrate to the first receiving substrate using the highly viscous, light-transmitting material;

[0014] The first receiving substrate is removed, and the remaining second receiving substrate, the highly viscous light-transmitting material, the full-color Micro-LED chip array, and the metal bump electrodes on the Micro-LED chip form a pre-bonding module;

[0015] The metal bump electrodes of the pre-bonded module and the bonding metal bumps of the driving substrate are hot-compression bonded, and the pre-bonded module and the driving substrate are accurately fixed by utilizing the strong bonding force between the metals to complete the preparation of the full-color Micro-LED display device.

[0016] The beneficial effects of the present invention are: (1) Multiple high-precision transfer integration of Micro-LED chips is achieved based on strong bonding force. By adopting the method of direct hot-press bonding between metals, the entire Micro-LED chip array can be directly transferred multiple times with precision. The present invention not only solves the problem that monolithic integration can only produce monochrome Micro-LED display devices, but also, compared with the van der Waals force mass transfer technology solution based on weak bonding force, the strong bonding force obtained by hot-press bonding between metals can effectively improve the transfer accuracy and efficiency of Micro-LED. The transfer process is simple, which reduces the processing cost of full-color Micro-LED and is suitable for large-scale commercial production.

[0017] (2) The secondary transfer uses a strong adhesive material. Compared with the traditional mass transfer solution using van der Waals forces, the strong adhesive material has a much stronger adsorption and fixation ability on the chip, which can effectively reduce the damage and impact of external interference on the chip during the transfer process. Therefore, the transfer process can ensure the uniformity and integrity of the chip array.

[0018] (3) Simple preparation process. The strong adhesive material and the second receiving substrate are both highly light-transmitting materials. Therefore, after completing the electrical connection with the driving substrate, the outgoing light of the Micro-LED chip array will not be blocked by the substrate, avoiding the process of removing the chip substrate twice and simplifying the preparation process.

[0019] Preferably, the main material used to prepare the first receiving substrate is the same as the main material used to prepare the epitaxial substrate in the monochrome Micro-LED chip array, and the main material of the first receiving substrate is silicon or sapphire.

[0020] Preferably, the first receiving substrate includes a bonding material layer, which is made of any one or a combination of metal materials Ni, Cr, Pt and Au, and the bonding material layer includes a first metal layer and a second metal layer arranged in sequence from top to bottom.

[0021] Furthermore, the monochrome Micro-LED chip array includes a red, green, and blue Micro-LED chip array, and each of the Micro-LED chips is provided with the metal bump electrode.

[0022] Preferably, the three-color monochrome Micro-LED chip array is sequentially bonded by a bonding machine to achieve strong bonding between the chip metal bump electrodes and the preset positions of the first receiving substrate by means of hot pressing bonding, and the substrate material is removed; thereby achieving precise transfer and fixation of the Micro-LED chip array on the first receiving substrate.

[0023] Preferably, the second receiving substrate is a transparent substrate, and the material used to prepare the transparent substrate is used in a temperature range of 25-400° C., and the difference in thermal expansion coefficient between the transparent substrate and silicon is within 10%.

[0024] Further preferably, the second receiving substrate is made of borosilicate glass.

[0025] Preferably, the highly viscous light-transmitting material is a transparent material, and the transparent material has fluidity and viscosity at room temperature.

[0026] Further preferably, the highly viscous light-transmitting material is ultraviolet-curing UV glue, and the ultraviolet-curing UV glue is cured under ultraviolet radiation.

[0027] Preferably, the bonding temperature between the pre-bonding module and the driving substrate is 50-400° C., and the pre-bonding module and the driving substrate are accurately fixed by the strong bonding force between the metals.

[0028] Additional aspects and advantages of the present invention will be set forth in part in the description which follows and, in part, will be obvious from the description which follows, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] FIG1 is a flow chart of a method for manufacturing a full-color Micro-LED display device according to an embodiment of the present invention;

[0030] FIG2 is a schematic diagram of a first receiving substrate provided by an embodiment of the present invention;

[0031] FIG3 is a schematic diagram of three monochromatic Micro-LED chip arrays provided by an embodiment of the present invention;

[0032] FIG4 is a schematic diagram of transferring three monochromatic Micro-LED chip arrays to a first receiving substrate according to the present invention;

[0033] FIG5 is a schematic diagram of bonding a first receiving substrate and a second receiving substrate provided by an embodiment of the present invention;

[0034] FIG6 is a schematic structural diagram of a pre-bonding module provided in one embodiment of the present invention;

[0035] FIG7 is a schematic structural diagram of a full-color Micro-LED display device provided by one embodiment of the present invention;

[0036] FIG8 is a schematic diagram of a patterned GaN epitaxial structure provided by one embodiment of the present invention;

[0037] FIG9 is a schematic structural diagram of a Micro-LED chip array on a sapphire substrate using laser lift-off technology according to an embodiment of the present invention;

[0038] FIG10 is a schematic structural diagram of a full-color Micro-LED display device without the second receiving substrate provided by an embodiment of the present invention.

[0039] The following specific embodiments will further illustrate the present invention in conjunction with the above-mentioned drawings. Implementation Method

[0040] To facilitate understanding of the present invention, the present invention will be described more fully below with reference to the accompanying drawings. The drawings illustrate several embodiments of the present invention. However, the present invention may be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and comprehensive understanding of the present invention.

[0041] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be an intermediate element. When an element is referred to as being "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. The terms "vertical," "horizontal," "left," "right," and similar expressions used herein are for illustrative purposes only.

[0042] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one skilled in the art to which this invention pertains. The terms used in this specification of the present invention are for the purpose of describing specific embodiments only and are not intended to limit the present invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items.

[0043] Please refer to Figures 1 to 9, which show the full-color Micro-LED display device preparation method in Example 1 of the present invention. The full-color Micro-LED display device preparation method provided in this embodiment can effectively ensure the uniformity and integrity of the chip array after transfer, and can ultimately produce a high-uniformity and high-density LED display device, which correspondingly improves the user experience.

[0044] Specifically, this embodiment provides:

[0045] A method for preparing a full-color Micro-LED display device, wherein the method comprises:

[0046] Step S10: Three single-color Micro-LED chip arrays 200 and a first receiving substrate 100 are sequentially prepared. The three single-color Micro-LED chip arrays 200 are precisely fixed at predetermined positions on the first receiving substrate 100 by thermocompression bonding. The substrates of the three single-color Micro-LED chip arrays 200 are then removed to complete the transfer integration of the full-color Micro-LED chip array 200.

[0047] Step S20: Add a highly viscous, light-transmitting material 300 to the side of the first receiving substrate 100 facing the full-color Micro-LED chip array 200 to prepare a second receiving substrate 400, and fix the second receiving substrate 400 to the first receiving substrate 100 using the highly viscous, light-transmitting material 300.

[0048] Step S30: removing the first receiving substrate 100 and retaining the second receiving substrate 400, the highly viscous light-transmitting material 300, the full-color Micro-LED chip array 200, and the metal bump electrodes 210 on the Micro-LED chips to form a pre-bonding module;

[0049] In step S40, the metal bump electrodes 210 of the pre-bonded module are hot-compression bonded to the bonding metal bumps 503 on the prepared driving substrate 500, and the pre-bonded module and the driving substrate 500 are fixed by the strong bonding force between the metals to generate a corresponding full-color Micro-LED display device.

[0050] Specifically, to produce full-color Micro-LED display devices with good uniformity and high density, it is necessary to first prepare three single-color silicon-based Micro-LED chips for red, green, and blue. Specifically, these chips are processed from epitaxial wafers. The preparation process for these single-color Micro-LED chips includes chip mesa etching, chip isolation etching, evaporation of N and P metal bump electrodes 210, and chip sidewall passivation.

[0051] Preferably, each Micro-LED chip is provided with a metal bump electrode 210. Specifically, the metal bump electrode 210 of each Micro-LED chip is formed using a metal evaporation stripping process. Specifically, the metal is a Cr and Au laminated metal, where the Cr thickness is 5-30nm and the Au thickness is 400-800nm. Specifically, as shown in Figure 2, the first receiving substrate 100 includes a main material layer 101 and a bonding material layer. The bonding material layer is divided into a first metal layer 102 and a second metal layer 103.

[0052] Preferably, the main material layer 101 is made of the same material as that used for the epitaxial substrate of the above-mentioned Micro-LED chip, both of which are single-sided polished silicon or sapphire, and have a thickness of 170-1030 μm. In actual application, the above-mentioned main material layer 101 plays a major supporting role to ensure the rigidity of the first receiving substrate 100. In addition, the above-mentioned first metal layer 102 is metal Cr, and its thickness is 50-300 nm. Specifically, this layer of metal material mainly plays a bonding role, so the thickness is relatively thin. Correspondingly, the above-mentioned second metal layer 103 is metal Au, and its thickness is 200-600 nm. The current second metal layer 103 is the top layer on the surface of the first receiving substrate 100, and it mainly serves as a metal material layer that is hot-pressed and bonded to the metal bump electrode 210 on the above-mentioned Micro-LED chip array 200 to complete the corresponding fixed connection.

[0053] Specifically, as shown in FIG3 , this embodiment provides three monochromatic Micro-LED chip arrays, namely, a red chip 201 , a green chip 202 , and a blue chip 203 .

[0054] The monochrome Micro-LED chip array 200 provided in this embodiment is sequentially arranged on a first receiving substrate 100. Referring to FIG4 , the red chip 201, green chip 202, and blue chip 203 occupy sequential positions from left to right within an array period, as shown in FIG4-a, FIG4-b, and FIG4-c, respectively. The metal bump electrodes 210 of the monochrome Micro-LED chips are connected to the Au metal in the second metal layer 103 of the first receiving substrate 100 via thermocompression bonding. During the thermocompression bonding process, the high-temperature bonding between the metals ensures a secure and stable connection between the Micro-LED chips and the surface of the first receiving substrate 100, preventing them from falling off, thereby improving stability.

[0055] Preferably, the electrode metals in the three monochromatic Micro-LED chip arrays 200 are bonded to the second metal layer 102 in the first receiving substrate 100 by thermocompression bonding. It should be noted that during the thermocompression bonding process, the bonding pressure generated is 10-60 kg and the bonding temperature is 180-400°C.

[0056] Preferably, during the process of removing the silicon substrate of the three monochromatic Micro-LED chip arrays 200, a corrosion solution prepared from a strongly acidic mixed solution of nitric acid and hydrofluoric acid should be used for removal, which can correspondingly improve the removal efficiency of the substrate.

[0057] Specifically, as shown in FIG5 , the highly viscous, light-transmitting material 300 provided in this embodiment is applied to the first receiving substrate 100 100 and the monochrome Micro-LED chip array 200. It should be noted that the highly viscous, light-transmitting material 300 has a certain degree of fluidity and light transmittance at room temperature, thereby enabling it to be prepared on the first receiving substrate 100 by coating. Specifically, the viscosity of the highly viscous, light-transmitting material can be utilized to achieve a fixed relative position between the second receiving substrate 400 and the first receiving substrate 100. Preferably, the second receiving substrate 400 is configured as a transparent substrate. The second receiving substrate is subjected to a high temperature during thermocompression bonding with the silicon-based driver substrate. The increased temperature causes the material to expand laterally within the plane, causing the metal bump electrodes prepared on the surfaces of the second receiving substrate and the silicon-based driver substrate to shift in plane, thereby affecting the accuracy of the thermocompression bonding. Therefore, the thermal expansion coefficient of the second receiving substrate should be within 10% of that of silicon within the temperature range of 25-400°C. While ensuring bonding accuracy, the thermal mismatch between the two materials is required to be within a controllable range.

[0058] Specifically, the highly viscous light-transmitting material 300 may be ultraviolet-curing UV glue. In a specific implementation, the ultraviolet-curing UV glue may be prepared on the first receiving substrate 100 and the monochrome Micro-LED chip array 200 by manual coating.

[0059] Optionally, before UV curing, the thickness of the current UV curing UV glue can be thinned by mechanical pressing to within 100 μm, and the UV curing time can be controlled to be 4-8 hours. Preferably, the second receiving substrate 400 is set to borosilicate glass, which has a thermal expansion coefficient close to that of silicon. The prepared second receiving substrate 400 is attached and placed in a vacuum oven for 3 hours until the bubbles in the UV curing UV glue escape from the material system. Finally, it is cured by irradiation with an ultraviolet lamp for 4-8 hours, so that a close fit between the first and second receiving substrates 400 can be achieved.

[0060] Specifically, a mixed acid solution (nitric acid, hydrofluoric acid, acetic acid) is used to corrode and remove the supporting material layer in the first receiving substrate 100, that is, the above-mentioned main material layer, and the corrosion time is 20-40 minutes; after the corrosion of the main material layer 101 is completed, since the above-mentioned mixed acid solution has weak corrosion ability on the first and second metal layers of the bonding material layer in the first receiving substrate 100, plasma etching is used to remove the remaining parts, including the metal bump electrodes 210 of the Micro-LED chip array 200.

[0061] Preferably, before etching with the mixed acid solution, the support material layer of the first receiving substrate 100 may be mechanically thinned to maintain a thickness of 50-100 μm. In addition, the etching gas used in the plasma etching is Ar plasma.

[0062] Specifically, the drive substrate 500 can be deposited with the bonding metal bumps 503 using a photolithographic lift-off method. The bonding metal bumps 503 can be made of one or more metals such as indium, titanium, aluminum, nickel, gold, chromium, and platinum. Specifically, in a specific embodiment, a mask pattern is formed using photoresist, and the substrate's silicon dioxide protective layer is wet-etched to expose the electrode contact holes. Alternatively, Au metal can be deposited as the bonding metal bumps 503 using electron beam evaporation, plasma sputtering, or thermal evaporation. Furthermore, a lift-off method is used to remove metal outside the electrode contact holes, allowing the Au metal to be electrically connected to the substrate electrode layer through the electrode contact holes.

[0063] Specifically, referring to Figure 7 , the structure of the full-color Micro-LED display device provided in this embodiment includes a pre-bonding module and a driver substrate 500, with the pre-bonding module positioned above the driver substrate 500. The pre-bonding module includes a Micro-LED chip array 200, metal bump electrodes 210 on the chips, a highly viscous, light-transmitting material 300, and a second receiving substrate 400. The driver substrate 500 includes a silicon-based driver circuit layer 501, a substrate silicon dioxide protective layer 502, and bonding metal bumps 503. Example

[0064] The preparation method provided in this embodiment is the same as that in Example 1, except that the highly viscous, light-transmitting material 300 employed in this embodiment differs from the UV-curable adhesive used in Example 1. Specifically, as shown in Figure 4 , the highly viscous, light-transmitting material 300 is SU-8 photoresist, applied by mechanical spin coating. After application, the second receiving substrate 400 is aligned and bonded, and then pressed using a bonding machine. The bonded sample is then placed on a hot plate for heating and curing.

[0065] Specifically, when spin coating the glue, the speed of the glue spreader is maintained at 2000-4000 r / min, and the glue is spread for 20-40 seconds; the heating temperature of the hot plate is maintained at 260° C., and the heating time is 15-30 minutes. Example

[0066] The preparation method provided in this embodiment is the same as that in Example 1, except that a processed monochrome patterned epitaxial wafer is used in this embodiment, and this embodiment can realize multiple transfers of Micro-LEDs at the wafer level. As shown in Figure 8, the patterned epitaxial wafer 600 includes: a red patterned epitaxial wafer 601, a green patterned epitaxial wafer 602, and a blue patterned epitaxial wafer 603. The patterned epitaxial wafer 600 should have multiple Micro-LED chip arrays 200 structures. Further, referring to Figures 1 to 4, the process of transferring the above-mentioned monochrome patterned epitaxial wafer to the first receiving substrate 100 is the same as that of the monochrome Micro-LED chip array 200 in Example 1. Example

[0067] The fabrication method provided in this embodiment is the same as that in Example 1, except that the substrate material for the three monochromatic Micro-LED chip arrays 200 in this embodiment is sapphire. As shown in Figure 9 , unlike the silicon substrate in Example 1, which was chemically etched with a strong acid solution, the sapphire epitaxial substrate 700 is separated from the Micro-LED chip array 200 using laser lift-off (see Figure 9-a). (See Figure 9-b) Example

[0068] The preparation method provided in this embodiment is the same as that in the first embodiment, except that the second receiving substrate 400 in this embodiment is removed after the pre-bonding module and the driving substrate 500 are fixed by thermocompression bonding.

[0069] Specifically, referring to Figures 5 and 6, unlike Example 1, the highly viscous light-transmitting material 300 of this embodiment is a photosensitive material 301. After the first receiving substrate 100 and the second receiving substrate 400 are bonded, stable bonding is achieved through high-temperature curing. After the pre-bonding module and the driving substrate 500 are fixed by hot pressing, as shown in Figure 10, after specific light exposure (see Figure 10-a), the adhesion between the highly viscous light-transmitting material 300 and the second receiving substrate 400 is weakened, and the second receiving substrate 400 can be separated from the pre-bonding module (see Figure 10-b). After the second receiving substrate 400 is removed, the optical crosstalk phenomenon of the full-color Micro-LED chip array 200 can be improved, and the overall display effect of the display device can be improved.

[0070] In summary, the full-color Micro-LED display device preparation method provided in this embodiment can effectively ensure the uniformity and integrity of the chip array after transfer, and can ultimately prepare a high-uniformity and high-density LED display device, which correspondingly improves the user experience.

[0071] Throughout this specification, reference to terms such as "one embodiment," "some embodiments," "examples," "specific examples," or "some examples" means that a specific feature, structure, material, or characteristic described in conjunction with that embodiment or example is included in at least one embodiment or example of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

[0072] The above-described embodiments merely illustrate several implementations of the present invention, and while their descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the present invention. It should be noted that a person skilled in the art would be able to make numerous variations and improvements without departing from the spirit of the present invention, all of which fall within the scope of protection of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

Claims

1. A method for preparing a full-color Micro-LED display device, characterized in that, The method includes: Preparing three monochromatic Micro-LED chip arrays and a first receiving substrate in sequence, and precisely fixing the three monochromatic Micro-LED chip arrays at preset positions on the first receiving substrate by means of thermocompression bonding, and removing the substrates of the three monochromatic Micro-LED chip arrays to complete the transfer integration of the full-color Micro-LED chip array; Adding a strongly adhesive light-transmitting material on the side of the first receiving substrate facing the full-color Micro-LED chip array, preparing a second receiving substrate, and fixing the second receiving substrate on the first receiving substrate through the strongly adhesive light-transmitting material; Removing the first receiving substrate, and the remaining second receiving substrate, the strongly adhesive light-transmitting material, the full-color Micro-LED chip array, and the metal bump electrodes on the Micro-LED chips form a pre-bonding module; Performing thermocompression bonding on the metal bump electrodes of the pre-bonding module and the bonding metal bumps of the driving substrate, and accurately fixing the pre-bonding module and the driving substrate by using the strong bonding force between metals to complete the preparation of the full-color Micro-LED display device.

2. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The main material for preparing the first receiving substrate is the same as the main material of the epitaxial substrate in the monochromatic Micro-LED chip array, and the main material of the first receiving substrate is silicon or sapphire.

3. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The first receiving substrate includes a bonding material layer, and the bonding material layer is prepared from any one or a combination of metal materials Ni, Cr, Pt, and Au. The bonding material layer includes a first metal layer and a second metal layer arranged in sequence from top to bottom.

4. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The monochromatic Micro-LED chip array includes red, green, and blue Micro-LED chip arrays, and each Micro-LED chip is provided with the metal bump electrode.

5. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The three monochromatic Micro-LED chip arrays are sequentially bonded by a bonder in a thermocompression bonding manner to achieve strong bonding between the chip metal bump electrodes and the preset positions on the first receiving substrate, and the substrate material is removed; Realize the precise transfer and fixation of the Micro-LED chip array on the first receiving substrate.

6. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The second receiving substrate is a transparent substrate, and the material for preparing the transparent substrate is used in the temperature range of 25-400°C and the thermal expansion coefficient difference between it and silicon is within 10%.

7. The manufacturing method of the full-color Micro-LED display device according to claim 6, characterized in that: The second receiving substrate is high borosilicate glass.

8. The manufacturing method of the full-color Micro-LED display device according to claim 1, characterized in that: The strongly adhesive light-transmitting material is a transparent material, and the transparent material has fluidity and adhesiveness at room temperature.

9. The manufacturing method of the full-color Micro-LED display device according to claim 8, characterized in that: The strongly adhesive light-transmitting material is ultraviolet curable UV glue, and the ultraviolet curable UV glue cures under ultraviolet irradiation.

10. The manufacturing method of the full-color Micro-LED display device according to claim 1, wherein: The bonding temperature between the pre-bonding module and the driving substrate is 50-400°C, and the accurate fixation between the pre-bonding module and the driving substrate is completed by using the strong bonding force between metals.

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